Simulation Model of Multilayer Capacitor and Simulation Method of Multilayer Capacitor

Abstract

The present invention provides a simulation model of a multilayer capacitor and a simulation method of a multilayer capacitor that can shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk. The simulation model (1) of the multilayer capacitor is a model for three-dimensional electromagnetic field simulation, and includes a pair of input / output ports (PORT), a flat first internal electrode model (10) and a second internal electrode model (20) disposed between the pair of input / output ports (PORT). The first internal electrode model (10) and the second internal electrode model (20) are set with a capacitance C, an equivalent series resistance ESR, and an equivalent series inductance ESL obtained from measured values of the impedance characteristics of the multilayer capacitor. The first internal electrode model (10) is disposed to face two side surfaces of the multilayer capacitor, and the second internal electrode model (20) is disposed to face two main surfaces of the multilayer capacitor.

Description

Technical Field

[0001] The present invention relates to a simulation model of a multilayer capacitor and a simulation method of a multilayer capacitor. Background Art

[0002] When a multilayer capacitor is mounted on a high-frequency electronic device, crosstalk occurs between the multilayer capacitor and the surrounding electronic components. In order to analyze this crosstalk, a simulation model of a multilayer capacitor for three-dimensional electromagnetic field simulation is urgently needed. In Patent Document 1, as such a simulation model, a simulation model of an electronic component for a three-dimensional circuit simulator is disclosed.

[0003] The simulation model of the electronic component disclosed in Patent Document 1 is configured such that, in addition to the external shape structure of the electronic component, it also includes the internal structure of the electronic component and physical constants (including constants acting on electromagnetic waves, such as relative permittivity, conductivity, relative permeability, complex permittivity, complex permeability, etc. of the constituent elements constituting the electronic component) that are constants representing the characteristics of the electronic component.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2006-185182

[0007] In a simulation model of a multilayer capacitor (hereinafter, also referred to as an internal structure reflection model) having an actual internal structure, that is, an actual shape and an actual number of internal electrodes as disclosed in Patent Document 1, the time required for simulation is long.

[0008] Regarding this point, the inventors of the present application designed a simulation model of a multilayer capacitor (hereinafter, also referred to as a surface element model) that simulates an actual shape and an actual number of internal electrodes with a single flat plate-shaped internal electrode model for the purpose of shortening the simulation time. However, in this surface element model, depending on the arrangement position of the single flat plate-shaped internal electrode model, in three-dimensional electromagnetic field simulation, the simulation result of crosstalk sometimes deviates from the measured value, that is, the simulation accuracy of crosstalk sometimes decreases. Summary of the Invention

[0009] Problems to be Solved by the Invention

[0010] An object of the present invention is to provide a simulation model of a multilayer capacitor for three-dimensional electromagnetic field simulation and a simulation method of a multilayer capacitor that can shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0011] Technical Solutions for Solving the Problems

[0012] The simulation model of the multilayer capacitor related to the present invention is a simulation model of a multilayer capacitor for three-dimensional electromagnetic field simulation, and includes: a pair of input / output ports; a flat first internal electrode model disposed between the pair of input / output ports; and a flat second internal electrode model disposed between the pair of input / output ports. The first internal electrode model and the second internal electrode model are set with a capacitance C, an equivalent series resistance ESR, and an equivalent series inductance ESL obtained based on the measured values of the impedance characteristics of the multilayer capacitor. The first internal electrode model is disposed to face two side surfaces of the multilayer capacitor that face each other in the width direction, and the second internal electrode model is disposed to face two main surfaces of the multilayer capacitor that face each other in the height direction intersecting with the width direction.

[0013] The simulation method of the multilayer capacitor related to the present invention is a simulation method of a multilayer capacitor for three-dimensional electromagnetic field simulation, and includes: a configuration step of disposing a simulation model of a multilayer inductor between a first input / output port and a second input / output port, and disposing the simulation model of the multilayer capacitor between a third input / output port and a fourth input / output port; and a simulation step of inputting a frequency sweep signal to the first input / output port or the third input / output port to perform a simulation of characteristics related to crosstalk between the first input / output port and the fourth input / output port or between the third input / output port and the second input / output port. The simulation model of the multilayer capacitor includes: a flat first internal electrode model disposed between the third input / output port and the fourth input / output port; and a flat second internal electrode model disposed between the third input / output port and the fourth input / output port. The first internal electrode model and the second internal electrode model are set with a capacitance C, an equivalent series resistance ESR, and an equivalent series inductance ESL obtained based on the measured values of the impedance characteristics of the multilayer capacitor. The first internal electrode model is disposed to face two side surfaces of the multilayer capacitor that face each other in the width direction, and the second internal electrode model is disposed to face two main surfaces of the multilayer capacitor that face each other in the height direction intersecting with the width direction. In the configuration step, the simulation model of the multilayer capacitor is disposed adjacent to the simulation model of the multilayer inductor, and the first internal electrode model or the second internal electrode model is disposed to cross the magnetic field from the simulation model of the multilayer inductor.

[0014] Another simulation method for a multilayer capacitor according to the present invention is a simulation method for a multilayer capacitor used in three-dimensional electromagnetic field simulation, including: a configuration step of configuring a simulation model of a multilayer inductor between a first input / output port and a second input / output port, and configuring a simulation model of the multilayer capacitor between a third input / output port and a fourth input / output port; and a simulation step of inputting a frequency sweep signal to the first input / output port or the third input / output port, and performing a simulation of characteristics related to crosstalk between the first input / output port and the fourth input / output port or between the third input / output port and the second input / output port. The simulation model of the multilayer capacitor includes a flat first internal electrode model disposed between the third input / output port and the fourth input / output port, and the first internal electrode model is set with a capacitance C, an equivalent series resistance ESR, and an equivalent series inductance ESL obtained based on measured values of the impedance characteristics of the multilayer capacitor. The first internal electrode model is configured to face two side faces of the multilayer capacitor that face each other in the width direction, or is configured to face two main faces of the multilayer capacitor that face each other in the height direction intersecting the width direction. In the configuration step, the simulation model of the multilayer capacitor is configured to be adjacent to the simulation model of the multilayer inductor, and the first internal electrode model is configured to cross a magnetic field from the simulation model of the multilayer inductor.

[0015] Advantages of the Invention

[0016] According to the present invention, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk. Description of the Drawings

[0017] Figure 1 FIG. is a perspective view showing a simulation model of a multilayer capacitor according to the present embodiment.

[0018] Figure 2 FIG. is a top view showing a simulation model of a multilayer capacitor and a simulation model of a multilayer inductor according to the present embodiment.

[0019] Figure 3 is Figure 2 a cross-sectional view taken along line III-III of the shown simulation model.

[0020] Figure 4 is Figure 2 a cross-sectional view taken along line III-III of the shown simulation model.

[0021] Figure 5 is based on Figure 2 and Figure 3 an example of a simulation result of the transmission characteristic S41 of the shown simulation method.

[0022] Figure 6 is based on Figure 2 and Figure 3 An example of the simulation result of the resonant frequency of the simulation method shown

[0023] Figure 7A A sectional view of the simulation model related to Modification 1, and is equivalent to Figure 2 The sectional view along line III-III shown

[0024] Figure 7B A sectional view of the simulation model related to Modification 1, and is equivalent to Figure 2 The sectional view along line III-III shown

[0025] Figure 7C A sectional view of the simulation model related to Modification 1, and is equivalent to Figure 2 The sectional view along line III-III shown

[0026] Figure 7D A sectional view of the simulation model related to Modification 1, and is equivalent to Figure 2 The sectional view along line III-III shown

[0027] Figure 7E A sectional view of the simulation model related to Modification 1, and is equivalent to Figure 2 The sectional view along line III-III shown

[0028] Figure 7F A sectional view of the simulation model related to Modification 1, and is equivalent to Figure 2 The sectional view along line III-III shown

[0029] Figure 7G A sectional view of the simulation model related to Modification 1, and is equivalent to Figure 2 The sectional view along line III-III shown

[0030] Figure 7H A sectional view of the simulation model related to Modification 1, and is equivalent to Figure 2 The sectional view along line III-III shown

[0031] Figure 7I A sectional view of the simulation model related to Modification 1, and is equivalent to Figure 2 The sectional view along line III-III shown

[0032] Figure 8A A sectional view of the simulation model related to Modification 1, and is equivalent to Figure 2 The sectional view along line III-III shown

[0033] Figure 8B is a sectional view of the simulation model related to Variant 1 and corresponds to the sectional view along line III-III shown in Figure 2

[0034] Figure 8C is a sectional view of the simulation model related to Variant 1 and corresponds to the sectional view along line III-III shown in Figure 2

[0035] Figure 8D is a sectional view of the simulation model related to Variant 1 and corresponds to the sectional view along line III-III shown in Figure 2

[0036] Figure 8E is a sectional view of the simulation model related to Variant 1 and corresponds to the sectional view along line III-III shown in Figure 2

[0037] Figure 8F is a sectional view of the simulation model related to Variant 1 and corresponds to the sectional view along line III-III shown in Figure 2

[0038] Figure 8G is a sectional view of the simulation model related to Variant 1 and corresponds to the sectional view along line III-III shown in Figure 2

[0039] Figure 8H is a sectional view of the simulation model related to Variant 1 and corresponds to the sectional view along line III-III shown in Figure 2

[0040] Figure 8I is a sectional view of the simulation model related to Variant 1 and corresponds to the sectional view along line III-III shown in Figure 2

[0041] Figure 9A is a sectional view of the simulation model related to Variant 2 and corresponds to the sectional view along line III-III shown in Figure 2

[0042] Figure 9B is a sectional view of the simulation model related to Variant 2 and corresponds to the sectional view along line III-III shown in Figure 2

[0043] Figure 9C is a sectional view of the simulation model related to Variant 2 and corresponds to the sectional view along line III-III shown in Figure 2 ​​​​​​​​​​​

[0044] Figure 10A is a cross-sectional view of the simulation model related to Modification 2 and is equivalent to the cross-sectional view along line III-III shown in Figure 2

[0045] Figure 10B is a cross-sectional view of the simulation model related to Modification 2 and is equivalent to the cross-sectional view along line III-III shown in Figure 2

[0046] Figure 10C is a cross-sectional view of the simulation model related to Modification 2 and is equivalent to the cross-sectional view along line III-III shown in Figure 2

[0047] Figure 11A is a cross-sectional view of the simulation model related to Modification 3 and is equivalent to the cross-sectional view along line III-III shown in Figure 2

[0048] Figure 11B is a cross-sectional view of the simulation model related to Modification 3 and is equivalent to the cross-sectional view along line III-III shown in Figure 2

[0049] Figure 11C is a cross-sectional view of the simulation model related to Modification 3 and is equivalent to the cross-sectional view along line III-III shown in Figure 2

[0050] Figure 12A is a cross-sectional view of the simulation model related to Modification 3 and is equivalent to the cross-sectional view along line III-III shown in Figure 2

[0051] Figure 12B is a cross-sectional view of the simulation model related to Modification 3 and is equivalent to the cross-sectional view along line III-III shown in Figure 2

[0052] Figure 12C is a cross-sectional view of the simulation model related to Modification 3 and is equivalent to the cross-sectional view along line III-III shown in Figure 2

[0053] Figure 13 is a perspective view of the simulation model of the multilayer capacitor showing the comparative example.

[0054] Figure 14 is a cross-sectional view of the simulation model of the comparative example and is equivalent to the cross-sectional view along line III-III shown in Figure 2

[0055] Figure 15 ​​​​​​​​​​It is a perspective view showing a simulation model of a conventional multilayer capacitor.

[0056] Explanation of Reference Numerals

[0057] 1, 1X, 1Y: Simulation models of multilayer capacitors;

[0058] 10: First internal electrode model;

[0059] 10C: Part of the first internal electrode model;

[0060] 10L: Part of the first internal electrode model;

[0061] 10R: Part of the first internal electrode model;

[0062] 20: Second internal electrode model;

[0063] 20C: Part of the second internal electrode model;

[0064] 20L: Part of the second internal electrode model;

[0065] 20R: Part of the second internal electrode model;

[0066] 30: Third internal electrode model;

[0067] 30C: Part of the third internal electrode model;

[0068] 30L: Part of the third internal electrode model;

[0069] 30R: Part of the third internal electrode model;

[0070] 40: Fourth internal electrode model;

[0071] 40C: Part of the fourth internal electrode model;

[0072] 40L: Part of the fourth internal electrode model;

[0073] 40R: Part of the fourth internal electrode model;

[0074] 10Y: Internal electrode;

[0075] 11Y: One charge extraction electrode and part of the internal electrode;

[0076] 12Y: Part of the other charge extraction electrode;

[0077] 100: Mounting substrate;

[0078] PORT: Input / output port;

[0079] PORT1: First input / output port;

[0080] PORT2: The second input / output port;

[0081] PORT3: The third input / output port;

[0082] PORT4: The fourth input / output port;

[0083] L: The simulation model of the multilayer inductor;

[0084] M: Internal conduction. Detailed implementation mode

[0085] Hereinafter, an example of the implementation mode of the present invention will be described with reference to the accompanying drawings. In addition, in each figure, the same or corresponding parts are denoted by the same reference numerals.

[0086] (Background)

[0087] Figure 15 is a perspective view showing a simulation model of a conventional multilayer capacitor. Figure 15 The simulation model 1Y of the conventional multilayer capacitor shown is a model for three-dimensional electromagnetic field simulation using various analysis methods such as, for example, the finite element method, the method of moments, or the FDTD (Finite Differential Time Domain) method.

[0088] In Figure 15 , the outer shapes of the laminate (hereinafter, also referred to as the green body) and the external electrodes in the multilayer capacitor are shown by dashed lines. As Figure 15 shown by the dashed lines in, the multilayer capacitor includes a laminate in which a plurality of internal electrodes and a plurality of dielectric layers are laminated, and external electrodes disposed at the ends of the laminate. As the material of the dielectric layer, various dielectric materials such as ceramics can be cited, for example.

[0089] In addition, in Figure 15 , an XYZ orthogonal coordinate system is shown. The X direction is the length direction L of the multilayer capacitor and the laminate, the Y direction is the width direction W of the multilayer capacitor and the laminate, and the Z direction is the height direction (hereinafter, also referred to as the lamination direction) T of the multilayer capacitor and the laminate. The multilayer capacitor and the laminate are substantially rectangular parallelepiped in shape, and have two main surfaces opposed to each other in the height direction T, two side surfaces opposed to each other in the width direction W, and two end surfaces opposed to each other in the length direction L. When the multilayer capacitor is mounted on a mounting substrate, the main surfaces are opposed to the main surface of the mounting substrate, and the side surfaces and the end surfaces intersect the main surface of the mounting substrate. In addition, in the present application, the term "intersect" includes the concept of "orthogonal".

[0090] As Figure 15As shown, the simulation model 1Y of the conventional multilayer capacitor has a pair of input / output ports PORT and an actual internal structure arranged between the pair of input / output ports PORT, that is, an actual shape and an actual number of internal electrodes 10Y and a plurality of dielectric layers (hereinafter, also referred to as an internal structure reflection model). In Figure 15 the example of, the internal electrode 10Y includes an internal electrode portion 11Y integrally formed with one charge extraction electrode and another charge extraction electrode portion 12Y.

[0091] The simulation model 1Y of the conventional multilayer capacitor is obtained, for example, by fitting the measured values of the impedance characteristic Z and the equivalent series resistance ESR of the multilayer capacitor while changing the conductivity of the internal electrode and the dielectric constant of the dielectric layer. Thus, the simulation model 1Y of the conventional multilayer capacitor becomes a model that reflects the conductivity of the actual internal electrode, the dielectric constant of the actual dielectric layer, and the capacitance component and inductance component due to the actual structure, etc.

[0092] According to the simulation model 1Y of this conventional multilayer capacitor, since it has an actual internal structure, the simulation accuracy of crosstalk between the multilayer capacitor and the surrounding electronic components is relatively high. However, according to the simulation model 1Y of this conventional multilayer capacitor, in order to have an actual internal structure, that is, an actual shape and an actual number of internal electrodes 10Y, the time required for simulation is relatively long.

[0093] Regarding this point, for the purpose of shortening the simulation time, the inventor of the present application designed a simulation model of a multilayer capacitor (hereinafter, also referred to as a surface element model) that simulates the actual shape and the actual number of internal electrodes with a single flat internal electrode model.

[0094] Figure 13 is a perspective view showing a simulation model of a multilayer capacitor of a comparative example. Figure 13 The shown simulation model 1X of the multilayer capacitor of the comparative example is a model for three-dimensional electromagnetic field simulation using various analysis methods such as the finite element method, the method of moments, or the FDTD method as described above. In Figure 13 it, the external shape structures of the laminate (hereinafter, also referred to as the green body) and the external electrodes in the multilayer capacitor are also shown by dashed lines. In addition, in Figure 13 it, the XYZ orthogonal coordinate system is also shown.

[0095] As Figure 13As shown, the simulation model 1X of the multilayer capacitor of the comparative example includes a pair of input / output ports PORT and a flat internal electrode model 10 disposed between the pair of input / output ports PORT. The simulation model 1X of the multilayer capacitor of the comparative example has the internal electrode model 10 at the position of the lowermost layer of the actual internal electrode.

[0096] In the internal electrode model 10, a capacitance C, an equivalent series resistance ESR, and an equivalent series inductance ESL obtained based on the measured values of the impedance characteristics of the multilayer capacitor are set. In Figure 13 , the internal electrode model 10 includes three parts connected in series, namely, part 10L, part 10C, and part 10R. The equivalent series inductance ESL is set in part 10L, the capacitance C is set in part 10C, and the equivalent series resistance ESR is set in part 10R.

[0097] These capacitance C, equivalent series resistance ESR, and equivalent series inductance ESL can be obtained, for example, by using the following formula to fit the measured values of the impedance characteristic Z and the equivalent series resistance ESR of the multilayer capacitor.

[0098] Z = ESL + (1 / jωC) + ESR

[0099] Thus, the simulation model 1X of the multilayer capacitor of the comparative example becomes a model that reflects the conductivity of the actual internal electrode, the dielectric constant of the actual dielectric layer, and the capacitance components and inductance components due to the actual structure, etc.

[0100] According to the simulation model 1X of the multilayer capacitor of this comparative example, since only one internal electrode model 10 is provided, the time required for simulation is relatively short. However, according to the simulation model 1X of the multilayer capacitor of this comparative example, since one internal electrode model 10 is disposed at the position of the lowermost layer of the actual internal electrode, in the three-dimensional electromagnetic field simulation, the simulation result of crosstalk sometimes deviates from the measured value, that is, the simulation accuracy of crosstalk sometimes decreases. The detailed research will be described later.

[0101] Therefore, the inventors of the present application designed a simulation model of a multilayer capacitor for three-dimensional electromagnetic field simulation that can shorten the simulation time while suppressing the decrease in the simulation accuracy of crosstalk. Hereinafter, the simulation model of the multilayer capacitor of this design will be described.

[0102] (Simulation model of the multilayer capacitor according to this embodiment)

[0103] Figure 1 is a perspective view showing the simulation model of the multilayer capacitor according to this embodiment. Figure 1The simulation model 1 of the stacked capacitor shown is a model for three-dimensional electromagnetic field simulation using various analysis methods such as the finite element method, the method of moments, or the FDTD method as described above. In Figure 1 it, the outer shape configurations of the stacked body (hereinafter also referred to as the green body) and the external electrodes in the stacked capacitor are also shown by dashed lines. In addition, in Figure 1 it, the XYZ orthogonal coordinate system is also shown.

[0104] As Figure 1 shown, the simulation model 1 of the stacked capacitor includes a pair of input / output ports PORT and four internal electrode models, namely, the first internal electrode model 10, the second internal electrode model 20, the third internal electrode model 30, and the fourth internal electrode model 40. The first internal electrode model 10, the second internal electrode model 20, the third internal electrode model 30, and the fourth internal electrode model 40 are each plate-shaped internal electrode models arranged between the pair of input / output ports PORT.

[0105] The first internal electrode model 10 and the third internal electrode model 30 are arranged to face the two side faces of the stacked capacitor. The first internal electrode model 10 is arranged on one side face side of the two side faces and at the position of the edge portion on one side face side of the actual internal electrode. The third internal electrode model 30 is arranged on the other side face side of the two side faces and at the position of the edge portion on the other side face side of the actual internal electrode. In addition, the arrangement positions of the first internal electrode model 10 and the third internal electrode model 30 are not limited to this. For example, it may be that either the first internal electrode model 10 or the third internal electrode model 30 is arranged near the center between the two side faces and at a position near the center between the edge portion on one side face side and the edge portion on the other side face side of the actual internal electrode.

[0106] The second internal electrode model 20 and the fourth internal electrode model 40 are arranged to face the two main faces of the stacked capacitor. The second internal electrode model 20 is arranged on one main face side of the two main faces and at the position of the uppermost layer side of the actual internal electrode. The fourth internal electrode model 40 is arranged on the other main face side of the two main faces and at the position of the lowermost layer side of the actual internal electrode. In addition, the arrangement positions of the second internal electrode model 20 and the fourth internal electrode model 40 are not limited to this. For example, it may be that either the second internal electrode model 20 or the fourth internal electrode model 40 is arranged near the center between the two main faces and at a position near the center between the uppermost layer and the lowermost layer of the actual internal electrode.

[0107] In other words, the first internal electrode model 10 and the third internal electrode model 30 are arranged to cross the main surface of the mounting substrate, for example, arranged perpendicular to the main surface of the mounting substrate. The second internal electrode model 20 and the fourth internal electrode model 40 are arranged to face the main surface of the mounting substrate, for example, arranged parallel to the main surface of the mounting substrate.

[0108] The first internal electrode model 10, the second internal electrode model 20, the third internal electrode model 30, and the fourth internal electrode model 40 are set with a capacitance C, an equivalent series resistance ESR, and an equivalent series inductance ESL obtained from the measured values of the impedance characteristics of the multilayer capacitor. These capacitance C, equivalent series resistance ESR, and equivalent series inductance ESL can be equally distributed to the four internal electrode models or distributed unevenly with weighting.

[0109] These capacitance C, equivalent series resistance ESR, and equivalent series inductance ESL can be obtained, for example, by fitting the measured values of the impedance characteristic Z and the equivalent series resistance ESR of the multilayer capacitor using the following formula.

[0110] Z = ESL+(1 / jωC)+ESR

[0111] In the case where there is a series model of LCR in the three-dimensional electromagnetic field simulator, an internal electrode model can also be created with one series model. On the other hand, in the case where there is a parallel model of LCR in the three-dimensional electromagnetic field simulator, three parallel models of LCR can be used, and the model with only L, the model with only C, and the model with only R are connected in series.

[0112] In Figure 1In the example, the first internal electrode model 10 includes three parts connected in series, namely, part 10L, part 10C, and part 10R. An equivalent series inductance ESL is set in part 10L, a capacitance C is set in part 10C, and an equivalent series resistance ESR is set in part 10R. Similarly, the second internal electrode model 20 includes three parts connected in series, namely, part 20L, part 20C, and part 20R. An equivalent series inductance ESL is set in part 20L, a capacitance C is set in part 20C, and an equivalent series resistance ESR is set in part 20R. Similarly, the third internal electrode model 30 includes three parts connected in series, namely, part 30L, part 30C, and part 30R. An equivalent series inductance ESL is set in part 30L, a capacitance C is set in part 30C, and an equivalent series resistance ESR is set in part 30R. Similarly, the fourth internal electrode model 40 includes three parts connected in series, namely, part 40L, part 40C, and part 40R. An equivalent series inductance ESL is set in part 40L, a capacitance C is set in part 40C, and an equivalent series resistance ESR is set in part 40R.

[0113] Thus, the first internal electrode model 10, the second internal electrode model 20, the third internal electrode model 30, and the fourth internal electrode model 40 become models that reflect the conductivity of the actual internal electrode, the dielectric constant of the actual dielectric layer, and the capacitance component and inductance component due to the actual structure, etc.

[0114] (Simulation method for a multilayer capacitor according to this embodiment)

[0115] Next, use Figures 2 to 4 To describe a simulation method for a multilayer capacitor for three-dimensional electromagnetic field simulation using the above-mentioned simulation model 1 of the multilayer capacitor, especially a simulation method for crosstalk analysis between the multilayer capacitor and surrounding electronic components. Figure 2 It is a top view showing the simulation model of the multilayer capacitor and the simulation model of the multilayer inductor according to this embodiment, Figure 3 And Figure 4 Is Figure 2 A cross-sectional view taken along line III-III of the simulation model shown.

[0116] First, a simulation model L of a multilayer inductor is arranged between the first input / output port PORT1 and the second input / output port PORT2. In addition, a simulation model 1 of a multilayer capacitor is arranged between the third input / output port PORT3 and the fourth input / output port PORT4 (arrangement step). At this time, an installation substrate 100 on which the simulation model L of the multilayer inductor and the simulation model 1 of the multilayer capacitor are installed may also be arranged.

[0117] At this time, configure the simulation model 1 of the multilayer capacitor,

[0118] · such that it is adjacent to the simulation model L of the multilayer inductor at a desired interval D, and,

[0119] · such that the first internal electrode model 10 and the third internal electrode model 30( Figure 3 ) or the second internal electrode model 20 and the fourth internal electrode model 40( Figure 4 ) cross the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor, for example, perpendicularly.

[0120] Here, the multilayer inductor includes a laminate (hereinafter, also referred to as a green body) in which a plurality of coil-shaped internal conductors and a plurality of magnetic body layers are laminated, and external electrodes disposed at the ends of the laminate. As the material of the magnetic body layer, various magnetic body materials such as magnetic body ceramics can be cited, for example.

[0121] The simulation model L of the multilayer inductor is a model for three-dimensional electromagnetic field simulation using various analysis methods such as the finite element method, the method of moments, or the FDTD method, for example.

[0122] The simulation model L of the multilayer inductor has an actual internal structure, that is, an actual shape and an actual number of internal conductors M and a plurality of magnetic body layers. The simulation model L of the multilayer inductor is obtained, for example, by fitting the measured values of the impedance characteristics Z and the equivalent series resistance ESR of the multilayer inductor while changing the conductivity of the internal conductor and the magnetic permeability of the magnetic body layer. Thus, the simulation model L of the multilayer inductor becomes a model that reflects the conductivity of the actual internal conductor, the magnetic permeability of the actual magnetic body layer, and the capacitance component due to the actual structure, etc.

[0123] In the Figure 3 example, a case where the lamination direction of the multilayer inductor is the width direction of the multilayer inductor, in other words, a case where the lamination direction of the multilayer inductor is the direction along the main surface of the mounting substrate 100, is shown. Such a multilayer inductor is called a so-called longitudinally wound multilayer inductor. In this case, the orientation of the magnetic field H, in other words, the orientation of the magnetic flux B, from the simulation model L of the multilayer inductor becomes the width direction of the multilayer inductor, in other words, the direction along the main surface of the mounting substrate 100. In this case, the first internal electrode model 10 and the third internal electrode model 30 of the simulation model 1 of the multilayer capacitor cross the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor, for example, perpendicularly.

[0124] On the other hand, in Figure 4In the example, the stacking direction of the stacked inductor is the height direction of the stacked inductor. In other words, the stacking direction of the stacked inductor is the direction crossing the main surface of the mounting substrate 100. Such a stacked inductor is called a so-called horizontally wound stacked inductor. In this case, the orientation of the magnetic field H from the simulation model L of the stacked inductor, in other words, the orientation of the magnetic flux B, becomes the width direction of the stacked inductor, in other words, the direction crossing the main surface of the mounting substrate 100. In this case, the second internal electrode model 20 and the fourth internal electrode model 40 of the simulation model 1 of the stacked capacitor cross the magnetic field H from the simulation model L of the stacked inductor, in other words, the magnetic flux B, for example, perpendicularly.

[0125] Next, a frequency sweep signal is input to the first input / output port PORT1, and a simulation of the characteristics related to the crosstalk between the first input / output port PORT1 and the fourth input / output port PORT4 is performed (simulation process). Alternatively, a frequency sweep signal is input to the third input / output port 3, and a simulation of the characteristics related to the crosstalk between the third input / output port PORT3 and the second input / output port PORT2 is performed (simulation process).

[0126] As the characteristics related to crosstalk, transmissive characteristics S41 from the first input / output port PORT1 to the fourth input / output port PORT4, transmissive characteristics S23 from the third input / output port PORT3 to the second input / output port PORT2, or the mutual inductance between the stacked inductor and the stacked capacitor can be cited.

[0127] Hereinafter, an example of the simulation result of the crosstalk between the simulation model 1 of the stacked capacitor and the simulation model L of the stacked inductor according to the present embodiment based on the above-described simulation method of the stacked capacitor, an example of the simulation result of the crosstalk between the simulation model 1X of the stacked capacitor of the comparative example and the simulation model L of the stacked inductor, and an example of the simulation result of the crosstalk between the simulation model 1Y of the stacked capacitor of the conventional example and the simulation model L of the stacked inductor are shown. As the crosstalk characteristics, simulations of the transmissive characteristics S41 and the resonant frequency were performed.

[0128] The simulation model 1 of the stacked capacitor according to the present embodiment, the simulation model 1X of the stacked capacitor of the comparative example, and the simulation model 1Y of the stacked capacitor of the conventional example are models of the following multilayer ceramic capacitors.

[0129] Multilayer ceramic capacitor: Capacitance 10 pF, size 0402 (the length direction L is 0.4 mm, the width direction W is 0.2 mm, and the height direction T is 0.2 mm)

[0130] The simulation model L of the stacked inductor is a model of the following multilayer ceramic inductor.

[0131] Multilayer ceramic inductor: such as Figure 3 The longitudinally wound type shown, inductance 56 nH, size 0402 (the size of the length direction L is 0.4 mm, the size of the width direction W is 0.2 mm, and the size of the height direction T is 0.3 mm)

[0132] Figure 5 is an example of the simulation result of the transmission characteristic S41 based on Figure 2 and Figure 3 the simulation method shown. The interval D between the simulation models 1, 1X or 1Y of the multilayer capacitor and the simulation model L of the multilayer inductor is 60 μm. The characteristic A1 of the solid line is Figure 1 the simulation result of the simulation model 1 of the multilayer capacitor of the present embodiment shown. The characteristic A1X of the dotted line is Figure 13 the simulation result of the simulation model 1X of the multilayer capacitor of the comparative example shown. The characteristic A1Y of the single-dot dash line is Figure 15 the simulation result of the simulation model 1Y of the multilayer capacitor of the conventional example shown.

[0133] Figure 6 is an example of the simulation result of the resonance frequency based on Figure 2 and Figure 3 the simulation method shown. The intervals D between the simulation models 1, 1X or 1Y of the multilayer capacitor and the simulation model L of the multilayer inductor are 60 μm, 80 μm, and 100 μm. The characteristic A1 of the square (solid line) is Figure 1 the simulation result of the simulation model 1 of the multilayer capacitor of the present embodiment shown. The characteristic A1X of the circle (dotted line) is Figure 13 the simulation result of the simulation model 1X of the multilayer capacitor of the comparative example shown. The characteristic A1Y of the triangle (single-dot dash line) is Figure 15 the simulation result of the simulation model 1Y of the multilayer capacitor of the conventional example shown.

[0134] According to Figure 5 and Figure 6 , as described above, in the simulation model 1X of the multilayer capacitor of the comparative example, compared with the simulation model 1Y of the multilayer capacitor of the conventional example that is close to the measured value, the transmission characteristic S41 and the resonance frequency characteristic deviated, that is, the crosstalk characteristic deviated. In contrast, in the simulation model 1 of the multilayer capacitor of the present embodiment, compared with the simulation model 1Y of the multilayer capacitor of the conventional example that is close to the measured value, the deviation of the transmission characteristic S41 and the resonance frequency characteristic is suppressed, that is, the deviation of the crosstalk characteristic is suppressed. Regarding this result, the inventors of the present application conducted research as follows.

[0135] such as Figure 14As shown, the height of the multilayer capacitor is lower than that of the multilayer inductor. In addition, when the simulation model L of the multilayer inductor is a longitudinally wound type, the magnetic field H, in other words, the magnetic flux B, becomes a direction along the main surface of the mounting substrate 100, for example, a parallel direction.

[0136] In this case, in the simulation model 1X of the multilayer capacitor of the comparative example, the internal electrode model 10 is only one and is only arranged at the lowermost layer position of the actual internal electrode. Therefore, as Figure 14 shown, it is not easily affected by the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor. Therefore, it is considered that the transmission characteristic S41 and the resonance frequency deviate, that is, the crosstalk characteristic deviates.

[0137] In contrast, in the simulation model 1 of the multilayer capacitor according to the present embodiment, as Figure 3 shown, the first internal electrode model 10 and the third internal electrode model 30 are arranged to cross, for example, be perpendicular to the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor. Therefore, it is relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, it is considered that the decrease in the simulation accuracy of the transmission characteristic S41 and the resonance frequency can be suppressed, that is, the decrease in the simulation accuracy of crosstalk can be suppressed.

[0138] In addition, the simulation model 1 of the multilayer capacitor according to the present embodiment further includes a second internal electrode model 20 and a fourth internal electrode model 40 that face the main surface of the multilayer capacitor in addition to the first internal electrode model 10 and the third internal electrode model 30 that face the side surface of the multilayer capacitor. Thus, as Figure 4 shown, even when the multilayer inductor is a laterally wound type, since the second internal electrode model 20 and the fourth internal electrode model 40 are arranged to cross, for example, be perpendicular to the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, it is considered that the decrease in the simulation accuracy of the transmission characteristic S41 and the resonance frequency can be suppressed, that is, the decrease in the simulation accuracy of crosstalk can be suppressed.

[0139] In addition, although the above research is based on an example of the simulation result of the simulation model of the 0402 type multilayer capacitor, it is not limited thereto. It can be considered applicable to the simulation models of multilayer capacitors of various sizes such as 0201 type (the size of the length direction L is 0.2 mm, the size of the width direction W is 0.1 mm, and the size of the height direction T is 0.1 mm), 0603 type (the size of the length direction L is 0.6 mm, the size of the width direction W is 0.3 mm, and the size of the height direction T is 0.3 mm).

[0140] In addition, although the above research is an example of simulation results when the interval D between the simulation model of the multilayer capacitor and the simulation model of the multilayer inductor is 60 μm, 80 μm, and 100 μm, it is not limited thereto, and it can be considered applicable to, for example, the case where the interval D is 50 μm or more and 100 μm or less.

[0141] As described above, according to the simulation model 1 of the multilayer capacitor of the present embodiment, compared with Figure 13 the simulation model 1X of the multilayer capacitor of the comparative example shown, in the three-dimensional electromagnetic field simulation, it is possible to suppress the decrease in the simulation accuracy of crosstalk. In addition, according to the simulation model 1 of the multilayer capacitor of the present embodiment, since it only has four internal electrode models, that is, the first internal electrode model 10, the second internal electrode model 20, the third internal electrode model 30, and the fourth internal electrode model 40, so compared with Figure 15 the simulation model 1Y of the multilayer capacitor of the conventional example shown, it is possible to shorten the simulation time of the three-dimensional electromagnetic field simulation.

[0142] The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various changes and deformations can be made. For example, in the above embodiments, the simulation model 1 of the multilayer capacitor having four flat internal electrode models, that is, the first internal electrode model 10, the second internal electrode model 20, the third internal electrode model 30, and the fourth internal electrode model 40, is exemplified. However, the present invention is not limited thereto, and it can be as Figures 7A to 7I , Figures 8A to 8I , Figures 9A to 9C , Figures 10A to 10C , Figures 11A to 11C and Figures 12A to 12C shown to change the number and arrangement positions of the internal electrode models.

[0143] (Modification Example 1)

[0144] As Figure 7A and Figure 8A shown, the simulation model 1 of the multilayer capacitor may also be in the following manner, that is, in the simulation model 1 of the multilayer capacitor shown in Figure 3 , it only has two flat internal electrode models, that is, the first internal electrode model 10 and the second internal electrode model 20. That is, the simulation model 1 of the multilayer capacitor may also be in the following manner, that is, it only has the first internal electrode model 10 facing the side surface of the multilayer capacitor and the second internal electrode model 20 facing the main surface of the multilayer capacitor.

[0145] In this case, the first internal electrode model 10 and the second internal electrode model 20 are set with the capacitance C, equivalent series resistance ESR, and equivalent series inductance ESL obtained from the measured values of the impedance characteristics of the multilayer capacitor. These capacitance C, equivalent series resistance ESR, and equivalent series inductance ESL can be equally distributed to the two internal electrode models or distributed unevenly with weighting.

[0146] Thus, as Figure 7A shown, even if the multilayer inductor is a longitudinally wound type, since the first internal electrode model 10 is arranged to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor, it is relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0147] In addition, as Figure 8A shown, even if the multilayer inductor is a transversely wound type, since the second internal electrode model 20 is arranged to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor, it is relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0148] In addition, as Figure 7B and Figure 8B 、 Figure 7C and Figure 8C shown, regarding the simulation model 1 of the multilayer capacitor, the arrangement position of the second internal electrode model 20 can also be changed in the simulation model 1 of the multilayer capacitor as Figure 7A and Figure 8A shown. For example, as Figure 7B and Figure 8B shown, the second internal electrode model 20 can be arranged on the other main surface side of the two main surfaces and at the position on the lowermost layer side of the actual internal electrode. In addition, as Figure 7C and Figure 8C shown, the second internal electrode model 20 can be arranged near the center between the two main surfaces and at the position near the center between the uppermost layer and the lowermost layer of the actual internal electrode.

[0149] Thus, as Figure 7B and Figure 7CAs shown, even if the multilayer inductor is a longitudinally wound type, since the first internal electrode model 10 is configured to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0150] In addition, as Figure 8B and Figure 8C shown, even if the multilayer inductor is a transversely wound type, since the second internal electrode model 20 is configured to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0151] In addition, as Figure 7D and Figure 8D , Figure 7E and Figure 8E shown, regarding the simulation model 1 of the multilayer capacitor, it is also possible to change the arrangement position of the first internal electrode model 10 in the simulation model 1 of the multilayer capacitor as Figure 7A and Figure 8A shown. For example, as Figure 7D and Figure 8D shown, the first internal electrode model 10 is arranged on the other side surface among the two side surfaces and at the position of the edge portion on the other side surface of the actual internal electrode. In addition, as Figure 7E and Figure 8E shown, the first internal electrode model 10 is arranged near the center between the two side surfaces and at the position near the center between the edge portion on one side surface and the edge portion on the other side surface of the actual internal electrode.

[0152] Thus, as Figure 7D and Figure 7E shown, even if the multilayer inductor is a longitudinally wound type, since the first internal electrode model 10 is configured to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0153] In addition, as Figure 8D and Figure 8EAs shown, even if the stacked inductor is of the horizontal winding type, since the second internal electrode model 20 is arranged to cross, for example, perpendicularly, the magnetic field H from the simulation model L of the stacked inductor, in other words, the magnetic flux B, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0154] In addition, as Figure 7F and Figure 8F , Figure 7G and Figure 8G , Figure 7H and Figure 8H , Figure 7I and Figure 8I shown, regarding the simulation model 1 of the stacked capacitor, it is also possible to change the arrangement positions of the first internal electrode model 10 and the second internal electrode model 20 in the simulation model 1 of the stacked capacitor shown in Figure 7A and Figure 8A shown. For example, as Figure 7F and Figure 8F shown, the first internal electrode model 10 is arranged on the other side surface among the two side surfaces, and at the position of the edge portion on the other side surface of the actual internal electrode, and the second internal electrode model 20 is arranged on the other main surface among the two main surfaces, and at the position of the lowermost layer side of the actual internal electrode. In addition, as Figure 7G and Figure 8G shown, the first internal electrode model 10 is arranged on the other side surface among the two side surfaces, and at the position of the edge portion on the other side surface of the actual internal electrode, and the second internal electrode model 20 is arranged near the center between the two main surfaces, and at the position near the center between the uppermost layer and the lowermost layer of the actual internal electrode. In addition, as Figure 7H and Figure 8H shown, the first internal electrode model 10 is arranged near the center between the two side surfaces, and at the position near the center between the edge portion on one side surface and the edge portion on the other side surface of the actual internal electrode, and the second internal electrode model 20 is arranged on the other main surface among the two main surfaces, and at the position of the lowermost layer side of the actual internal electrode. In addition, as Figure 7I and Figure 8I shown, the first internal electrode model 10 is arranged near the center between the two side surfaces, and at the position near the center between the edge portion on one side surface and the edge portion on the other side surface of the actual internal electrode, and the second internal electrode model 20 is arranged near the center between the two main surfaces, and at the position near the center between the uppermost layer and the lowermost layer of the actual internal electrode.

[0155] Thus, asFigure 7F , Figure 7G , Figure 7H and Figure 7I As shown, even if the stacked inductor is of the longitudinal winding type, since the first internal electrode model 10 is configured to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the stacked inductor, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0156] In addition, as Figure 8F , Figure 8G , Figure 8H and Figure 8I shown, even if the stacked inductor is of the lateral winding type, since the second internal electrode model 20 is configured to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the stacked inductor, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0157] (Modification Example 2)

[0158] As Figure 9A and Figure 10A shown, the simulation model 1 of the stacked capacitor can also be in the following manner, that is, in the simulation model 1 of the stacked capacitor shown in Figure 3 , only three plate-shaped internal electrode models are provided, that is, the first internal electrode model 10, the second internal electrode model 20, and the third internal electrode model 30. That is, the simulation model 1 of the stacked capacitor can also be in the following manner, that is, only the first internal electrode model 10 and the third internal electrode model 30 facing the side surface of the stacked capacitor and the second internal electrode model 20 facing the main surface of the stacked capacitor are provided.

[0159] In this case, the capacitance C, equivalent series resistance ESR, and equivalent series inductance ESL obtained from the measured values of the impedance characteristics of the stacked capacitor are set for the first internal electrode model 10, the second internal electrode model 20, and the third internal electrode model 30. These capacitance C, equivalent series resistance ESR, and equivalent series inductance ESL can be equally distributed to the three internal electrode models or distributed unevenly with weighting.

[0160] Thus, as Figure 9AAs shown, even if the multilayer inductor is of the longitudinal winding type, since the first internal electrode model 10 and the third internal electrode model 30 are arranged to cross the magnetic field H from the simulation model L of the multilayer inductor, in other words, the magnetic flux B, for example, perpendicularly, they are also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0161] In addition, as Figure 10A shown, even if the multilayer inductor is of the transverse winding type, since the second internal electrode model 20 is arranged to cross the magnetic field H from the simulation model L of the multilayer inductor, in other words, the magnetic flux B, for example, perpendicularly, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0162] In addition, as Figure 9B and Figure 10B , Figure 9C and Figure 10C shown, regarding the simulation model 1 of the multilayer capacitor, the arrangement position of the second internal electrode model 20 can also be changed in the simulation model 1 of the multilayer capacitor as Figure 9A and Figure 10A shown. For example, as Figure 9B and Figure 9B shown, the second internal electrode model 20 is arranged on the other main surface side of the two main surfaces and at the position on the lowermost layer side of the actual internal electrode. In addition, as Figure 9C and Figure 10C shown, the second internal electrode model 20 is arranged near the center between the two main surfaces and at the position near the center between the edge of one main surface side and the edge of the other main surface side of the actual internal electrode.

[0163] Thus, as Figure 9B and Figure 9C shown, even if the multilayer inductor is of the longitudinal winding type, since the first internal electrode model 10 and the third internal electrode model 30 are arranged to cross the magnetic field H from the simulation model L of the multilayer inductor, in other words, the magnetic flux B, for example, perpendicularly, they are also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0164] In addition, as Figure 10B and Figure 10CAs shown, even if the stacked inductor is of the horizontal winding type, since the second internal electrode model 20 is arranged to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the stacked inductor, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0165] In addition, although not shown, the simulation model 1 of the stacked capacitor may also be in the following manner, that is, it includes one internal electrode model facing the side surface of the stacked capacitor and two internal electrode models facing the main surface of the stacked capacitor.

[0166] (Variant 3)

[0167] As Figure 11A shown, the simulation model 1 of the stacked capacitor may also be in the following manner, that is, in the simulation model 1 of the stacked capacitor Figure 3 shown, it only includes one flat first internal electrode model 10. That is, the simulation model 1 of the stacked capacitor may also be in the following manner, that is, it only includes the first internal electrode model 10 facing the side surface of the stacked capacitor.

[0168] In this case, the first internal electrode model 10 is set with the capacitance C, equivalent series resistance ESR, and equivalent series inductance ESL obtained from the measured value of the impedance characteristics of the stacked capacitor.

[0169] Thus, as Figure 11A shown, even if the stacked inductor is of the vertical winding type, since the first internal electrode model 10 is arranged to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the stacked inductor, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0170] In addition, as Figure 11B and Figure 11C shown, regarding the simulation model 1 of the stacked capacitor, the arrangement position of the first internal electrode model 10 can also be changed in the simulation model 1 of the stacked capacitor Figure 11A shown. For example, as Figure 11B shown, the first internal electrode model 10 can be arranged on the other side surface among the two side surfaces, and at the position of the edge of the other side surface of the actual internal electrode. In addition, as Figure 11C shown, the first internal electrode model 10 can also be arranged near the center between the two side surfaces, and at the position near the center between the edge of one side surface and the edge of the other side surface of the actual internal electrode.

[0171] Accordingly, as Figure 11B and Figure 11C shown, even if the multilayer inductor is a longitudinally wound type, since the first internal electrode model 10 is arranged to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0172] In addition, as Figure 12A shown, regarding the simulation model 1 of the multilayer capacitor, the arrangement position of the first internal electrode model 10 can also be changed in the simulation model 1 of the multilayer capacitor as Figure 11A shown. For example, as Figure 12A shown, the first internal electrode model 10 can be arranged on one of the two main surfaces and at the uppermost layer side of the actual internal electrodes. That is, the simulation model 1 of the multilayer capacitor can also be in such a manner that it only has the first internal electrode model 10 facing the main surface of the multilayer capacitor.

[0173] Accordingly, as Figure 12A shown, even if the multilayer inductor is a transversely wound type, since the first internal electrode model 10 is arranged to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the multilayer inductor, it is also relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

[0174] In addition, as Figure 12B and Figure 12C shown, regarding the simulation model 1 of the multilayer capacitor, the arrangement position of the first internal electrode model 10 can also be changed in the simulation model 1 of the multilayer capacitor as Figure 12A shown. For example, as Figure 12B shown, the first internal electrode model 10 can be arranged on the other main surface of the two main surfaces and at the lowermost layer side of the actual internal electrodes. In addition, as Figure 12C shown, the first internal electrode model 10 can be arranged near the center between the two main surfaces and at a position near the center between the uppermost layer and the lowermost layer of the actual internal electrodes.

[0175] Accordingly, as Figure 12B and Figure 12CAs shown, even if the stacked inductor is of the horizontally wound type, since the first internal electrode model 10 is arranged to cross, for example, perpendicularly, the magnetic field H, in other words, the magnetic flux B, from the simulation model L of the stacked inductor, it is relatively easily affected by the magnetic field H, in other words, the magnetic flux B. Therefore, in three-dimensional electromagnetic field simulation, it is possible to shorten the simulation time while suppressing a decrease in the simulation accuracy of crosstalk.

Claims

1. A simulation model of a multilayer capacitor for three-dimensional electromagnetic field simulation, wherein, The simulation model of the multilayer capacitor has: A pair of input / output ports; A flat first internal electrode model disposed between the pair of input / output ports; and A flat second internal electrode model disposed between the pair of input / output ports, Each of the first internal electrode model and the second internal electrode model includes three parts respectively set with a capacitance C, an equivalent series resistance ESR, and an equivalent series inductance ESL obtained based on measured values of the impedance characteristics of the multilayer capacitor, The first internal electrode model is configured to face two side surfaces of the multilayer capacitor that are opposed in the width direction, The second internal electrode model is configured to face two main surfaces of the multilayer capacitor that are opposed in the height direction intersecting the width direction.

2. The simulation model of the multilayer capacitor according to claim 1, wherein, It further has: A flat third internal electrode model disposed between the pair of input / output ports; and A flat fourth internal electrode model disposed between the pair of input / output ports, Each of the third internal electrode model and the fourth internal electrode model includes three parts respectively set with a capacitance C, an equivalent series resistance ESR, and an equivalent series inductance ESL obtained based on measured values of the impedance characteristics of the multilayer capacitor, The third internal electrode model is configured to face the two side surfaces of the multilayer capacitor, The fourth internal electrode model is configured to face the two main surfaces of the multilayer capacitor, The first internal electrode model is disposed on one side surface of the two side surfaces, and the third internal electrode model is disposed on the other side surface of the two side surfaces, The second internal electrode model is disposed on one main surface of the two main surfaces, and the fourth internal electrode model is disposed on the other main surface of the two main surfaces.

3. A simulation method of a multilayer capacitor for three-dimensional electromagnetic field simulation, wherein, The simulation method of the multilayer capacitor includes: A configuration step of disposing a simulation model of a multilayer inductor between a first input / output port and a second input / output port, and disposing the simulation model of the multilayer capacitor between a third input / output port and a fourth input / output port; And A simulation step of inputting a frequency sweep signal to the first input / output port or the third input / output port, and performing a simulation of characteristics related to crosstalk between the first input / output port and the fourth input / output port or between the third input / output port and the second input / output port, The simulation model of the multilayer capacitor has: A flat first internal electrode model disposed between the third input / output port and the fourth input / output port; and A flat second internal electrode model disposed between the third input / output port and the fourth input / output port, Each of the first internal electrode model and the second internal electrode model includes three parts respectively set with a capacitance C, an equivalent series resistance ESR, and an equivalent series inductance ESL obtained based on measured values of the impedance characteristics of the multilayer capacitor, The first internal electrode model is configured to face two opposing sides of the stacked capacitor in the width direction. The second internal electrode model is configured to face two opposing main surfaces of the stacked capacitor in the height direction intersecting the width direction. In the configuration step, a simulation model of the stacked capacitor is configured. So as to be adjacent to the simulation model of the stacked inductor, and So that the first internal electrode model or the second internal electrode model intersects the magnetic field from the simulation model of the stacked inductor.

4. The method for simulating a stacked capacitor according to claim 3, wherein The simulation model of the stacked capacitor further includes: A flat plate-shaped third internal electrode model disposed between the third input / output port and the fourth input / output port; and A flat plate-shaped fourth internal electrode model disposed between the third input / output port and the fourth input / output port. Each of the third internal electrode model and the fourth internal electrode model includes three parts respectively set with a capacitance C, an equivalent series resistance ESR, and an equivalent series inductance ESL obtained from the measured value of the impedance characteristic of the stacked capacitor. The third internal electrode model is configured to face the two opposing sides of the stacked capacitor. The fourth internal electrode model is configured to face the two opposing main surfaces of the stacked capacitor. The first internal electrode model is disposed on one side of the two opposing sides, and the third internal electrode model is disposed on the other side of the two opposing sides. The second internal electrode model is disposed on one side of the two opposing main surfaces, and the fourth internal electrode model is disposed on the other side of the two opposing main surfaces. In the configuration step, a simulation model of the stacked capacitor is configured. So as to be adjacent to the simulation model of the stacked inductor, and So that the first internal electrode model and the third internal electrode model or the second internal electrode model and the fourth internal electrode model intersect the magnetic field from the simulation model of the stacked inductor.

5. A method for simulating a stacked capacitor for three-dimensional electromagnetic field simulation, wherein The method for simulating the stacked capacitor includes: A configuration step of configuring a simulation model of a stacked inductor between a first input / output port and a second input / output port, and configuring a simulation model of the stacked capacitor between a third input / output port and a fourth input / output port; And A simulation step of inputting a frequency sweep signal to the first input / output port or the third input / output port, and performing a simulation of characteristics related to crosstalk between the first input / output port and the fourth input / output port or between the third input / output port and the second input / output port. The simulation model of the stacked capacitor includes: a flat plate-shaped first internal electrode model disposed between the third input / output port and the fourth input / output port. The first internal electrode model includes three parts that are respectively set to obtain capacitance C, equivalent series resistance ESR, and equivalent series inductance ESL based on the measured values of the impedance characteristics of the multilayer capacitor. The first internal electrode model is configured to face two sides of the multilayer capacitor that face each other in the width direction, or is configured to face two main surfaces of the multilayer capacitor that face each other in the height direction intersecting the width direction. In the configuration step, a simulation model of the multilayer capacitor is configured. So that it is adjacent to the simulation model of the multilayer inductor, and So that the first internal electrode model intersects the magnetic field from the simulation model of the multilayer inductor.

6. The simulation method of the multilayer capacitor according to claim 5, wherein When the stacking direction of the multilayer inductor is the width direction of the multilayer inductor and the orientation of the magnetic field from the simulation model of the multilayer inductor is the width direction of the multilayer inductor, the first internal electrode model is configured to face the two sides of the multilayer capacitor.

7. The simulation method of the multilayer capacitor according to claim 6, wherein In the configuration step, a substrate on which the simulation model of the multilayer inductor and the simulation model of the multilayer capacitor are mounted is configured. The first internal electrode model is configured to intersect the main surface of the substrate.

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