Substrate processing equipment

Abstract

The present invention relates to a substrate processing device, characterized in that it can include: a vacuum chuck portion for placing a wafer; a ring cover portion arranged along the outer periphery of the vacuum chuck portion to pressurize the wafer and thereby seal the outer periphery of the vacuum chuck portion; and a sealing ring portion that is in close contact with a bonding sheet of the wafer and is pressurized by the ring cover portion. According to the present invention, as a clamping base rotates, multiple first clamping link portions and multiple wafer restraining portions move simultaneously, so that a wafer can be restrained on the vacuum chuck portion using a single clamping rotating portion, thereby reducing the number of clamping rotating portions provided in the clamping module.

Description

Technical Field

[0001] The present invention relates to a substrate processing device and a substrate processing method, and more particularly, to a substrate processing device and a substrate processing method capable of improving substrate processing performance and shortening substrate processing time. Background Art

[0002] Generally, in a semiconductor process, an etching process for etching a wafer, a separation process for dicing a wafer into a plurality of dies, a cleaning process for cleaning a wafer, etc. are performed. In the wafer etching process or the cleaning process, a substrate processing apparatus is used.

[0003] The substrate processing apparatus is rotatably arranged and comprises a rotating table on which a wafer is placed and a sealing ring annularly attached to the edge of the rotating table. As the rotating table rotates, a processing liquid is supplied to the wafer placed on the rotating table.

[0004] However, conventional substrate processing devices have difficulty removing foreign matter remaining in the gaps between the dies when cleaning a wafer cut into multiple dies. Furthermore, in order to remove foreign matter in the gaps between the dies, the cleaning time needs to be substantially extended, thereby increasing the cleaning time.

[0005] Furthermore, the process of attaching the sealing ring to the top of the turntable is complex, and the sealing ring's completeness during attachment is uncertain, potentially leading to attachment errors (such as twisting). Furthermore, if this occurs, the process fluid can seep outside the sealing ring, potentially damaging the surrounding structures of the turntable.

[0006] In addition, a wafer fixing module is provided to prevent the wafer from shifting, and a sealing ring fixing module is provided to fix the sealing ring. Therefore, the structure of the substrate processing apparatus becomes complicated, which may increase the manufacturing cost.

[0007] Background technology of the present invention is described in Korean Patent Publication No. 10-2016-0122067 (published on October 21, 2016, invention title: Wafer processing equipment and sealing ring for wafer processing equipment). Summary of the Invention

[0008] Technical problems to be solved

[0009] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can improve substrate processing performance and shorten substrate processing time.

[0010] Means of solving technical problems

[0011] According to the substrate processing device of the present invention, it is characterized in that it can include: a vacuum chuck part for placing a wafer; a ring cover part, which is arranged along the outer periphery of the vacuum chuck part to pressurize the wafer and thus seal the outer periphery side of the vacuum chuck part; and a sealing ring part, which is in close contact with the bonding sheet of the wafer and is pressurized through the ring cover part.

[0012] A deformation space may be formed inside the sealing ring portion so as to allow the sealing ring portion to deform when the ring cover portion is pressurized.

[0013] The ring cover portion may be formed with a sealing protrusion to closely fit the sealing ring portion.

[0014] The sealing ring portion may further include a fluid supply portion connected to the sealing ring portion to supply fluid to the deformation space portion and discharge fluid from the deformation space portion.

[0015] The sealing ring portion may further include a sealing force reinforcement portion provided in the deformation space portion to elastically support the sealing ring portion.

[0016] The inner side of the seal ring portion may be arranged to be embedded in a lower side of the outer peripheral surface of the vacuum chuck portion.

[0017] A sealing groove may be formed on the outer periphery of the vacuum chuck portion so as to accommodate the sealing ring portion, and the ring cover portion pressurizes the bonding sheet portion facing the sealing groove to seal the bonding sheet by tension.

[0018] The ring cover portion can prevent the supply liquid from infiltrating into the retaining ring portion side of the wafer as the bonding sheet of the wafer is pressurized.

[0019] The substrate processing apparatus may further include: a plurality of adsorption pads disposed at a vacuum port of the vacuum chuck to adsorb a retaining ring portion of the wafer.

[0020] The adsorption pad portion may include: an adsorption body portion, which is arranged on the upper side of the vacuum mouth portion to adsorb the chip; a flatness management portion, which is formed in a manner inclined from the lower outer portion of the adsorption body portion to the center portion side for the vacuum mouth portion to be inserted; and a press-in fixing portion, which is formed in the flatness management portion so as to be pressed into the fixing groove portion of the vacuum chuck portion.

[0021] Technical Effects

[0022] Furthermore, according to the present invention, as the clamping base rotates, the plurality of first clamping link portions and the plurality of wafer restraining portions move simultaneously, so that a single clamping rotating portion can be used to restrain the wafer on the vacuum chuck portion. Consequently, the number of clamping rotating portions provided in the clamping module can be reduced.

[0023] In addition, according to the present invention, the ring cover portion pressurizes the bonding sheet of the wafer, thereby sealing the outer periphery of the vacuum chuck, thereby reducing damage to the bonding sheet caused by the etching liquid and preventing contamination or damage to the rotary chuck portion and the vacuum chuck portion caused by the etching liquid.

[0024] Furthermore, according to the present invention, a wafer and a ring cover are simultaneously fixed to the vacuum chuck and the spin chuck using one chucking base and one chucking rotating portion, thereby simplifying the structure of the substrate processing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 FIG. 1 is a plan view briefly showing a wafer processed in a substrate processing apparatus according to a first embodiment of the present invention.

[0026] Figure 2 FIG. 1 is a side view schematically showing a wafer processed in a substrate processing apparatus according to a first embodiment of the present invention.

[0027] Figure 3 FIG. 1 is a side view schematically showing a substrate processing apparatus according to a first embodiment of the present invention.

[0028] Figure 4 A side view schematically illustrating a state in which intervals between a plurality of molds are expanded as a vacuum chuck portion ascends in a substrate processing apparatus according to a first embodiment of the present invention.

[0029] Figure 5 FIG. 1 is a side view schematically showing a substrate processing apparatus according to a second embodiment of the present invention.

[0030] Figure 6 FIG. 1 is a side view schematically showing a substrate processing apparatus according to a third embodiment of the present invention.

[0031] Figure 7 FIG. 1 is a cross-sectional view schematically showing a substrate processing apparatus according to a first embodiment of the present invention.

[0032] Figure 8 The figure is a cross-sectional view schematically showing a state in which a vacuum chuck portion of a substrate processing apparatus according to a first embodiment of the present invention is raised to a certain height by a moving module.

[0033] Figure 9 FIG1 is a cross-sectional view schematically showing an example of a moving module in a substrate processing apparatus according to a first embodiment of the present invention.

[0034] Figure 10 FIG. 1 is a cross-sectional view schematically showing another example of the moving module in the substrate processing apparatus according to the first embodiment of the present invention.

[0035] Figure 11 FIG. 1 is a cross-sectional view schematically showing another example of the moving module in the substrate processing apparatus according to the first embodiment of the present invention.

[0036] Figure 12 FIG. 1 is a plan view briefly showing a chucking module in a substrate processing apparatus according to a first embodiment of the present invention.

[0037] Figure 13 The present invention is a plan view briefly showing a state in which a clamping base of a clamping module in a substrate processing apparatus according to a first embodiment of the present invention is rotated by a certain angle.

[0038] Figure 14 A side view schematically illustrates a state in which a chucking link portion and a wafer restricting portion of a chucking module are disposed on a rotary chuck portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0039] Figure 15 The present invention is a perspective view briefly showing a first clamping link portion and a wafer limiting portion of a clamping module in a substrate processing apparatus according to a first embodiment of the present invention.

[0040] Figure 16 A cross-sectional view briefly illustrating a state in which a ring cover portion is provided on the periphery of a spin chuck portion and a vacuum chuck portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0041] Figure 17 A cross-sectional view briefly illustrating a state in which a second chucking link portion and a cover restricting portion are provided on a rotary chuck portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0042] Figure 18 The present invention is a perspective view schematically showing a substrate processing apparatus according to a first embodiment of the present invention in which a second chucking link portion and a cover restricting portion are provided.

[0043] Figure 19 FIG. 1 is a cross-sectional view schematically illustrating a cover restricting portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0044] Figure 20 A cross-sectional view schematically illustrating a state in which an upper surface of a retainer ring portion is disposed lower than an upper surface of a mold in a substrate processing apparatus according to a first embodiment of the present invention.

[0045] Figure 21 The present invention is a cross-sectional view schematically showing a state in which an adsorption pad portion is disposed on a vacuum chuck portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0046] Figure 22 The present invention is a cross-sectional view schematically showing a state in which a ring cover pressurizes a sealing ring portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0047] Figure 23FIG1 is a cross-sectional view schematically showing another example of the ring cover portion in the substrate processing apparatus according to the first embodiment of the present invention.

[0048] Figure 24 The present invention is a cross-sectional view schematically showing a state in which a sealing ring portion is connected to a fluid supply portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0049] Figure 25 The present invention is a cross-sectional view schematically showing a state in which a sealing force reinforcing portion is provided to pressurize a sealing ring portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0050] Figure 26 This is a cross-sectional view schematically illustrating a state in which the inner side of a seal ring portion is embedded in a second vacuum chuck in a substrate processing apparatus according to a first embodiment of the present invention.

[0051] Figure 27 The present invention is a cross-sectional view schematically showing a state in which a ring cover presses a gasket to seal the substrate processing apparatus according to the first embodiment of the present invention.

[0052] Figure 28 The flowchart briefly illustrates a substrate etching method in a substrate processing method according to a first embodiment of the present invention.

[0053] Figure 29 The flowchart briefly illustrates a substrate cleaning method in a substrate processing method according to a first embodiment of the present invention.

[0054] [Description of Reference Numerals]

[0055] 10: Wafer; 11: Mold; 12: Laminating sheet; 13: Retaining ring; 110: Driving unit; 111: Rotating shaft; 113: Motor; 120: Rotating chuck; 130: Vacuum chuck; 131: First vacuum chuck; 133: Second vacuum chuck; 134: Sealing groove; 135: Hanging unit; 135: Vacuum chamber; 136: Vacuum port; 137: Fixing groove; 140: Ring cover; 141: Cover body; 142: Limiting ridge 143: Cover pressing portion; 144: Sealing protrusion; 145: Locking pin; 145a: Reduction portion; 147: Locking groove; 150: Clamping module; 151: Clamping base; 152: Base body; 153: Guide portion; 154: Base gear portion; 155: Clamping rotating portion; 160: First clamping link portion; 161: First guide slider; 162: First link member; 163: First link gear portion; 164: First guide block; 165: First guide roller; 170: Wafer limiting portion; 171: Clamp shaft; 172: Clamp gear; 173: Clamp link; 174: Clamp support; 175: Pressurizing clamp; 175a: Clamp pivot; 175b: Pressurizing finger; 180: Second clamping link; 181: Second guide slider; 182: Second link member; 183: Second link gear; 184: Second guide block; 185: Second guide roller; 190 : Cover limiting portion; 191: Cover limiting shaft portion; 192: Limiting gear portion; 192a: Rotation preventing portion; 193: Second shaft coupling portion; 193a: Rotation preventing groove portion; 194: Elastic component; 195: Height adjusting portion; 196: Position fixing portion; 197: Cover limiting bar; 198: Limiting roller portion; 200: Moving module; 201: Medium flow channel portion; 203: Moving rod portion; 205: Cylinder portion; 207: Solenoid coil portion (solenoid unit); 210: adsorption pad portion; 211: adsorption body portion; 213: flatness management portion; 215: press-fit fixing portion; 220: sealing ring portion; 221: deformation space portion; 222: allowable space portion; 223: fluid supply portion; 223a: supply pipeline; 223b: discharge pipeline; 225: sealing force reinforcement portion; 225a: reinforcement rod portion; 225b: reinforcement spring. DETAILED DESCRIPTION

[0056] Below, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention are described with reference to the accompanying drawings. When describing the substrate processing apparatus and the substrate processing method, the thickness of lines and the dimensions of components shown in the drawings may be exaggerated for clarity and convenience. Furthermore, the terms used below are defined based on their functions within the present invention and may vary depending on the intentions or practices of the user or operator. Therefore, these terms should be defined based on the overall content of the present invention.

[0057] Figure 1 1 is a plan view briefly showing a wafer processed in a substrate processing apparatus according to a first embodiment of the present invention. Figure 2 1 is a side view briefly showing a wafer processed in a substrate processing apparatus according to a first embodiment of the present invention. Figure 3 To briefly illustrate a side view of a substrate processing apparatus according to a first embodiment of the present invention, Figure 4 A side view schematically illustrating a state in which intervals between a plurality of molds are expanded as a vacuum chuck portion ascends in a substrate processing apparatus according to a first embodiment of the present invention.

[0058] refer to Figures 1 to 4 The substrate processing apparatus according to the first embodiment of the present invention includes a spin chuck portion 120 , a vacuum chuck portion 130 , a chucking module 150 , and a moving module 200 .

[0059] The substrate processing apparatus etches and cleans wafers 10. During the etching process, an etching liquid is sprayed onto wafers 10. The etched wafers 10 are then cut into a plurality of molds 11 in a matrix shape during the separation process. During the cleaning process, foreign matter adhering to the plurality of wafers 10 is removed by spraying the cleaning liquid onto the wafers 10. The cleaning liquid can be a variety of liquids, such as deionized water (DI-water). The etching liquid and cleaning liquid supplied to the substrate processing apparatus during the etching and cleaning processes are referred to as supply liquids.

[0060] Wafer 10 includes multiple molds 11 arranged in a matrix, a bonding sheet 12 to which the multiple molds 11 are attached, and a retaining ring 13 connected to the outer periphery of bonding sheet 12 to tightly support bonding sheet 12. Bonding sheet 12 is formed of a horizontally stretchable material. As bonding sheet 12 is tightened by retaining ring 13, the multiple molds 11 are fixed in position, so that the molds 11 of the thin plate remain in a flat state.

[0061] The rotary chuck portion 120 is rotatably provided on the driving portion 110. The rotary chuck portion 120 may be formed in a circular plate shape as a whole.

[0062] The drive unit 110 includes a rotating shaft 111 connected to the rotation center of the rotating chuck unit 120 and a motor unit 113 disposed on the rotating shaft 111. The motor unit 113 includes a stator (not shown) disposed inside a housing (not shown) and a rotor (not shown) disposed inside the stator and arranged so as to surround the rotating shaft 111. Alternatively, the drive unit 110 may employ a belt drive method that rotates the rotating shaft 111 using a belt or a chain drive method that rotates the rotating shaft 111 using a chain. The drive unit 110 may adopt a variety of shapes as long as it can rotate the rotating chuck unit 120.

[0063] The rotary shaft 111 is provided with a vacuum flow channel 115 (see Figure 7and Figure 9 ) to vacuumize the vacuum chuck portion 130. The vacuum flow channel portion 115 is formed along the longitudinal direction of the rotating shaft 111. The vacuum chuck portion is formed with a vacuum chamber 135 in a manner connected to the vacuum flow channel portion.

[0064] The vacuum chuck unit 130 is disposed on the rotary chuck unit 120 and is used to place the wafer 10. When the drive unit 110 is driven, the vacuum chuck unit 130 rotates together with the rotary chuck unit 120. During an etching process in the substrate processing apparatus, the wafer 10 that has not been cut into a plurality of molds 11 is placed on the vacuum chuck unit 130. During a cleaning process in the substrate processing apparatus, the wafer 10 that has been cut into a plurality of molds 11 is placed on the vacuum chuck unit 130. When the molds 11 are cut from the wafer 10, foreign matter may remain in the gaps between the surfaces of the molds 11.

[0065] Clamping module 150 (reference Figure 7 ) is provided on the vacuum chuck portion 130 to secure the retaining ring portion 13 of the wafer 10 to the vacuum chuck portion 130. The clamping module 150 presses the retaining ring portion 13 downward to secure the retaining ring portion 13 to the outer periphery of the vacuum chuck portion 130. Therefore, when the rotary chuck portion 120 and the vacuum chuck portion 130 rotate, the clamping module 150 prevents the position of the wafer 10 from changing, so that the wafer 10 remains flat.

[0066] The moving module 200 is configured to move the vacuum chuck portion 130 or the clamping module 150 so as to expand the spacing between the molds 11 on the wafer 10. When the clamping module 150 fixes the retaining ring portion 13 of the wafer 10 to the outer periphery of the vacuum chuck portion 130, if the moving module 200 moves, the wafer 10 is pressurized by the movement of the moving module 200. At this time, as the bonding sheet 12 of the wafer 10 is tightened in the radial direction, the bonding sheet 12 grows in the radial direction. As the bonding sheet 12 grows in the radial direction, the spacing between the multiple molds 11 expands. When the spacing between the multiple molds 11 is expanded, when a cleaning liquid is sprayed onto the multiple molds 11, foreign matter attached to the surface of the mold 11 and foreign matter located in the gaps between the multiple molds 11 can be easily removed by the cleaning liquid. Therefore, the cleaning performance of foreign matter on the wafer 10 can be significantly improved. In addition, as the cleaning performance of the wafer 10 is significantly improved, the defective rate of the wafer 10 can be significantly reduced.

[0067] When the retaining ring portion 13 of the wafer 10 is fixed, the intervals between the molds 11 are expanded as the molds 11 move, or when the molds 11 are fixed, the intervals between the molds 11 are expanded as the retaining ring portion 13 moves. This will be described in detail below.

[0068] The moving module 200 is arranged on the rotary chuck part 120 to move the vacuum chuck part 130. For example, the moving module 200 moves the vacuum chuck part 130 upward, and the rotary chuck part 120 remains in a fixed position. At this time, the outer portion of the vacuum chuck part 130 supports the bonding sheet 12 of the wafer 10. As the moving module 200 drives the vacuum chuck part 130 to move upward, and the rotary chuck part 120 does not rise, the bonding sheet 12 rises and grows in the radial direction while the retaining ring part 13 of the wafer 10 is fixed in position. As the bonding sheet 12 grows in the radial direction, the spacing between the multiple molds 11 expands.

[0069] Figure 5 FIG. 1 is a side view schematically showing a substrate processing apparatus according to a second embodiment of the present invention.

[0070] refer to Figure 5 , the moving module 200 is set on the rotary chuck part 120 to move the clamping module 150. For example, the moving module 200 moves the clamping module 150 downward. At this time, the outer portion of the vacuum chuck part 130 supports the bonding sheet 12 of the wafer 10. As the moving module 200 is driven, the clamping module 150 moves downward, and the rotary chuck part 120 and the vacuum chuck part 130 do not rise. Therefore, the multiple molds 11 of the wafer 10 are fixed in position on the vacuum chuck part 130. As the retaining ring part 13 descends, the bonding sheet 12 grows in the radial direction. As the bonding sheet 12 grows in the radial direction, the spacing between the multiple molds 11 increases.

[0071] Figure 6 FIG. 1 is a side view schematically showing a substrate processing apparatus according to a third embodiment of the present invention.

[0072] refer to Figure 6 , the moving module 200 is arranged on the rotating chuck part 120 so that the clamping module 150 moves upward. The outer portion of the rotating chuck part 120 is provided with a structural member (not shown) for supporting the clamping module 150 in a liftable manner. The upper side of the outer portion of the rotating chuck part 120 is provided with a ring cover part 140 and other structural members that can pressurize the bonding sheet 12 part located on the inner side of the retaining ring part 13. At this time, the bonding sheet 12 of the wafer 10 is supported by the ring cover part 140 and other structural members so as not to rise. As the moving module 200 is driven, the clamping module 150 moves upward, and the rotating chuck part 120 and the vacuum chuck part 130 do not rise. Therefore, when the multiple molds 11 of the wafer 10 are fixed in position on the vacuum chuck part 130, as the retaining ring part 13 rises, the bonding sheet 12 grows in the radial direction. As the bonding sheet 12 grows in the radial direction, the intervals between the multiple molds 11 expand.

[0073] The moving module 200 may have various shapes as long as it can move the vacuum chuck portion 130 or the chucking module 150. An embodiment of the moving module 200 will be described below.

[0074] Figure 7 To briefly illustrate a cross-sectional view of a substrate processing apparatus according to a first embodiment of the present invention, Figure 8 A cross-sectional view briefly illustrating a state in which the vacuum chuck portion of the substrate processing apparatus according to the first embodiment of the present invention is raised to a certain height. Figure 9 A cross-sectional view briefly illustrating an example of a moving module in a substrate processing apparatus according to a first embodiment of the present invention is shown. Figure 10 A cross-sectional view briefly illustrating another example of a moving module in a substrate processing apparatus according to the first embodiment of the present invention is shown. Figure 11 FIG. 1 is a cross-sectional view schematically showing another example of the moving module in the substrate processing apparatus according to the first embodiment of the present invention.

[0075] refer to Figures 7 to 9 The moving module 200 includes a medium flow channel portion 201 and a moving rod portion 203. The medium flow channel portion 201 can be arranged inside the rotating shaft 111 along the length direction of the rotating shaft 111. The moving medium can be air or gas. The moving rod portion 203 is raised and lowered by the pressure of the moving medium and is arranged in a manner that contacts the lower portion of the vacuum chuck portion 130. The moving rod portion 203 can be provided with a return spring to reset the moving medium to its original position when the pressure of the moving medium is released. A plurality of moving rod portions 203 and the medium flow channel portion 201 can be provided along the circumferential direction of the rotating shaft 111. When the plurality of moving rod portions 203 causes the vacuum chuck portion 130 to be raised and lowered, the vacuum chuck portion 130 can be raised and lowered while maintaining a horizontal state.

[0076] refer to Figure 10 The moving module 200 may include a cylinder portion 205 for moving the vacuum chuck portion 130 or the clamping module 150. The cylinder portion 205 may be provided on the rotating chuck portion 120 to raise or lower the vacuum chuck portion 130, or provided on the rotating chuck portion 120 to move the clamping module 150. As fluid is supplied to or discharged from the cylinder portion 205, the cylinder portion 205 is driven, thereby enabling the vacuum chuck portion 130 or the clamping module 150 to move. When the cylinder portion 205 is used as the moving module 200, there is no need to provide a separate medium flow channel portion 201 on the drive portion 110, so the drive portion 110 can be formed with a simple structure.

[0077] refer to Figure 11The moving module 200 may include an electromagnetic coil unit 207 for moving the vacuum chuck unit 130 or the clamping module 150. The electromagnetic coil unit 207 may be provided on the rotating chuck unit 120 to raise or lower the vacuum chuck unit 130, or provided on the rotating chuck unit 120 to move the clamping module 150. As power is supplied to or cut off from the electromagnetic coil unit 207, the electromagnetic coil unit 207 is driven, thereby enabling the vacuum chuck unit 130 or the clamping module 150 to move. When the cylinder unit 205 is used as the moving module 200, there is no need to provide a separate medium flow channel unit 201 on the drive unit 110, so the drive unit 110 can be formed with a simple structure.

[0078] The moving module 200 may have various shapes, but the shape of the moving module 200 for moving the vacuum chuck part 130 up and down will be described in detail below.

[0079] Figure 12 To briefly illustrate a plan view of a clamping module in a substrate processing apparatus according to a first embodiment of the present invention, Figure 13 This is a plan view briefly showing a state in which a clamping base of a clamping module in a substrate processing apparatus according to a first embodiment of the present invention is rotated by a certain angle. Figure 14 This is a side view briefly illustrating a state in which a clamping link portion and a wafer restricting portion of a clamping module are disposed on a rotary chuck portion in a substrate processing apparatus according to a first embodiment of the present invention. Figure 15 The present invention is a perspective view briefly showing a first clamping link portion and a wafer limiting portion of a clamping module in a substrate processing apparatus according to a first embodiment of the present invention.

[0080] refer to Figures 12 to 15 The vacuum chuck unit 130 includes a first vacuum chuck 131 and a second vacuum chuck 133. The first vacuum chuck 131 is mounted on the rotary chuck unit 120 so as to rotate together with the rotary chuck unit 120. The first vacuum chuck 131 generates a vacuum pressure to absorb the wafer 10. The second vacuum chuck 133 is mounted on the first vacuum chuck 131 and is used to mount the wafer 10. The second vacuum chuck 133 is configured to be raised and lowered by the moving module 200 to expand the gap between the molds 11. The first vacuum chuck 131 and the second vacuum chuck 133 can be formed as a whole in the shape of a circular plate.

[0081] A medium flow channel 201 is formed on the rotating shaft 111 to supply air to the first vacuum chuck 131. The medium flow channel 201 is formed inside the rotating shaft 111 along the length of the rotating shaft 111. A plurality of suction holes (not shown) are formed on the second vacuum chuck 133. These suction holes are connected to the medium flow channel 201 of the first vacuum chuck 131 to suction the wafer 10. The plurality of suction holes can be arranged in a concentric circle along the circumference of the second vacuum chuck 133. When vacuum pressure is applied to the medium flow channel 201, the wafer 10 is tightly adhered to the upper surface of the second vacuum chuck 133 by the vacuum suction force of the suction holes. Therefore, in the substrate processing apparatus, the flatness of the wafer 10 can be maintained during etching or cleaning processes of the wafer 10.

[0082] The clamping module 150 includes a clamping base 151 , a clamping rotating portion 155 , a plurality of first clamping connecting rods 160 , and a plurality of wafer limiting portions 170 .

[0083] The clamping base 151 is provided on the rotating chuck portion 120. The clamping rotating portion 155 is connected to the clamping base 151 so as to rotate the clamping base 151. A plurality of first clamping link portions 160 are respectively connected to the clamping base 151 in a radial manner and move when the clamping base 151 rotates. A plurality of wafer limiting portions 170 are respectively connected to the first clamping link portion 160 so as to fix the retaining ring portion 13 of the wafer 10 to the vacuum chuck portion 130 when the first clamping link portion 160 moves. The clamping base 151 is provided in a manner to form a concentric relationship with the rotating chuck portion 120. The clamping base 151, the clamping rotating portion 155, and the first clamping link portion 160 are arranged inside the rotating chuck portion 120, and the wafer limiting portion 170 is arranged on the periphery of the rotating chuck portion 120 and the vacuum chuck portion 130.

[0084] When the clamping rotating portion 155 is driven, the multiple first clamping links 160 move along the radius of the clamping base 151 as the clamping base 151 rotates a certain angle. As the multiple first clamping links 160 move simultaneously, the multiple wafer restraining portions 170 compress and secure the retaining ring portion 13 of the wafer 10 to the outer periphery of the first vacuum chuck 131. As the clamping base 151 rotates, the multiple first clamping links 160 and the multiple wafer restraining portions 170 are driven simultaneously, allowing the wafer 10 to be restrained on the vacuum chuck portion 130 using a single clamping rotating portion 155. Consequently, the number of clamping rotating portions 155 provided in the clamping module 150 can be reduced.

[0085] The clamping base 151 includes a base body 152 , a plurality of guide portions 153 , and a base gear portion 154 .

[0086] The base body portion 152 is formed in a ring shape in a manner concentric with the rotating shaft 111 of the rotating chuck portion 120. The base body portion 152 is arranged inside the rotating chuck portion 120. A plurality of guide portions 153 are formed on the base body portion 152 so that the first clamping link portion 160 is movably coupled to the plurality of guide portions 153. The number of the plurality of guide portions 153 is twice the number of the first clamping link portion 160, and is formed at equal intervals along the circumferential direction of the base body portion 152. Each of the plurality of guide portions 153 is coupled to a first clamping link portion 160. The base gear portion 154 is formed on the base body portion 152 and is connected to the clamping rotating portion 155. The base gear portion 154 is arranged on the inner circumferential surface of the base body portion 152 in an arc shape. As the clamping rotating portion 155 is driven, the base gear portion 154 rotates. As the base body portion 152 and the base gear portion 154 rotate together, the first clamping link portion 160 moves along the radial direction of the base body portion 152 .

[0087] The guide portion 153 is formed to be inclined relative to the radius of the base body 152. The guide portion 153 may be a guide hole, a guide groove, or a guide protrusion. The guide portion 153 is formed to be inclined relative to the radius of the base body 152. Therefore, as the base body 152 rotates a certain angle, the first clamping link portion 160 moves linearly along the radius of the base body 152.

[0088] The first clamping link portion 160 includes a first guide slider 161, a first link member 162, and a first link gear portion 163. The first guide slider 161 is movably coupled to the guide portion 153. The first link member 162 is connected to the first guide slider 161 and moves linearly along the radius of the base body portion 152 when the first guide slider 161 moves. The first link member 162 is formed in a straight line shape. The first link gear portion 163 is formed on the first link member 162 so as to mesh and move with the wafer restraining portion 170. The first link gear portion 163 is formed in a rack shape parallel to the longitudinal direction of the first link member 162.

[0089] The first clamping link 160 further includes a first guide block 164, to which the first link member 162 is coupled for linear movement. The first guide block 164 prevents the first link member 162 from rotating circumferentially when the base body 152 rotates. The first guide block 164 may be provided with first guide rollers 165 to roll against both sides of the first link member 162 during linear movement. Therefore, when the first guide slider 161 moves along with the guide portion 153 during rotation of the base body 152, the first link member 162 can move linearly without rotating.

[0090] The wafer restraining portion 170 includes a clamp shaft portion 171 rotatably mounted on the rotating chuck portion 120; a clamp gear portion 172 formed on the clamp shaft portion 171 to mesh with the first link gear portion 163; a clamp link portion 173 connected to the clamp shaft portion 171; a clamp support portion 174 fixed to the rotating chuck portion 120; and a pressurizing clamp portion 175 rotatably mounted on the clamp support portion 174 and rotating to pressurize and release the retaining ring portion 13 of the wafer 10 as the clamp link portion 173 moves. The clamp shaft portion 171 is arranged perpendicular to the longitudinal direction of the first link member 162. The clamp gear portion 172 is formed in the shape of a pinion. The clamp link portion 173 connects the clamp shaft portion 171 and the clamp support portion 174 via a plurality of links (not shown). The pressurizing jig portion 175 is formed in an arc shape to pressurize and fix the retaining ring portion 13 of the wafer 10 in the circumferential direction.

[0091] The pressurizing clamp 175 includes a clamp pivoting portion 175a hingedly coupled to the clamp support portion 174 and connected to the clamp link portion 173; and a pressurizing finger 175b formed on the clamp pivoting portion 175a for applying pressure to and releasing the retaining ring portion 13 of the wafer 10. As the clamp gear portion 172 meshes and rotates with the first link gear portion 163 during linear movement of the first clamping link 160, the clamp pivoting portion 175a pivots on the clamp support portion 174. As the clamp pivoting portion 175a pivots, the pressurizing finger 175b applies pressure to and releases the retaining ring portion 13 of the wafer 10.

[0092] Figure 16 1 is a cross-sectional view briefly illustrating a state in which a ring cover portion is provided on the periphery of a rotary chuck portion and a vacuum chuck portion in a substrate processing apparatus according to a first embodiment of the present invention. Figure 17 1 is a cross-sectional view briefly showing a state in which a second chucking link portion and a cover restricting portion are provided on a rotary chuck portion in a substrate processing apparatus according to a first embodiment of the present invention. Figure 18 This is a perspective view briefly showing a state in which a second clamp link portion and a cover restricting portion are provided in a substrate processing apparatus according to a first embodiment of the present invention. Figure 19 FIG. 1 is a cross-sectional view schematically illustrating a cover restricting portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0093] refer to Figures 16 to 19The substrate processing apparatus further includes a ring cover 140, which is positioned along the periphery of the vacuum chuck 130 to pressurize the bonding sheet 12 of the wafer 10, thereby sealing the periphery of the vacuum chuck 130. The ring cover 140 is secured to the spin chuck 120 via a clamping module 150. Ring cover 140 is formed in a circular ring shape to pressurize the bonding sheet 12 of the wafer 10, thereby sealing the periphery of the vacuum chuck 130. This minimizes damage to the bonding sheet 12 caused by the etching solution and prevents contamination or damage to the spin chuck 120 and vacuum chuck 130 caused by the etching solution.

[0094] The ring cover portion 140 includes: a cover body portion 141, which is formed in a manner to surround the outer periphery of the vacuum chuck portion 130; a limiting ridge portion 142, which is formed in a manner to protrude inward from the lower side of the cover body portion 141; and a cover pressurizing portion 143, which extends inward from the upper side of the cover body portion 141 and pressurizes the bonding sheet 12 of the wafer 10. The cover pressurizing portion 143 is formed in a manner to pressurize the portion of the bonding sheet 12 that is approximately 1 mm away from the outermost contour of the mold 11 on the bonding sheet 12. The cover pressurizing portion 143 can be formed in a manner that gradually becomes thinner toward the end. Excluding the width of the cover of approximately 1 mm, the portion of the bonding sheet 12 between the retaining ring portion 13 and the mold 11 is sealed by the cover pressurizing portion 143, thereby minimizing the damage caused to the bonding sheet 12 by the etching liquid.

[0095] The ring cover 140 further includes a locking pin 145 protruding from the outer periphery of the rotating chuck 120, and a locking groove 147 is formed on the outer periphery of the ring cover 140 for inserting the locking pin 145. Therefore, when the ring cover 140 is placed on the outer periphery of the rotating chuck 120, the locking groove 147 of the ring cover 140 is inserted into the locking pin 145, and the placement position of the ring cover 140 can be accurately matched.

[0096] The clamping module 150 includes a plurality of second clamping link portions 180 and a plurality of cover limiting portions 190 .

[0097] Multiple second clamping links 180 are radially connected to the clamping base 151 and move when the clamping base 151 rotates. Multiple cover restrictors 190 are connected to the second clamping links 180 to secure the annular cover portion 140 to the rotating chuck portion 120 when the second clamping links 180 move. As the clamping rotating portion 155 is driven, the base gear portion 154 rotates. As the base body 152 rotates along with the base gear portion 154, the second clamping links 180 move along the radius of the base body 152. At this time, when the base body 152 of the clamping base 151 rotates, the multiple first clamping links 160 and the multiple second clamping links 180 move simultaneously. As the first clamping link 160 moves, the retaining ring 13 of the wafer 10 is fixed to the vacuum chuck 130, and as the second clamping link 180 moves, the ring cover 140 is fixed to the rotary chuck 120. Therefore, the wafer 10 and the ring cover 140 can be fixed to the vacuum chuck 130 and the rotary chuck 120 simultaneously using a single clamping base 151 and a single clamping rotating portion 155, thereby simplifying the structure of the substrate processing apparatus.

[0098] The second clamping link portion 180 includes a second guide slider 181 , a second link member 182 , and a second link gear portion 183 .

[0099] The second guide slider 181 is movably coupled to the guide portion 153. The second link member 182 is connected to the second guide slider 181 and linearly moves along the radius of the base body 152 when the second guide slider 181 moves. A second link gear portion 183 is formed on the second link member 182 so as to mesh with and move with the lid restrictor 190. The second link member 182 is formed in a straight bar shape. The second link gear portion 183 is formed in a rack shape parallel to the longitudinal direction of the second link member 182.

[0100] The second clamping link portion 180 further includes a second guide block 184, to which the second link member 182 is coupled for linear movement. The second guide block 184 prevents the second link member 182 from rotating circumferentially when the base body 152 rotates. The second guide block 184 may be provided with second guide rollers 185 to roll against both sides of the second link member 182 during linear movement. Therefore, when the second guide slider 181 moves along with the guide portion 153 during rotation of the base body 152, the second link member 182 can move linearly without rotating.

[0101] The cover limiting portion 190 includes: a cover limiting shaft portion 191, which is rotatably arranged on the rotating chuck portion 120; a limiting gear portion 192, formed on the cover limiting shaft portion 191 to engage with the second connecting rod gear portion 183; a cover limiting bar 197, which is connected to the cover limiting shaft portion 191 to pressurize and release the ring cover portion 140; and a limiting roller portion 198, which is rotatably arranged on the cover limiting bar 197 to be in rolling contact with the ring cover portion 140.

[0102] As second link member 182 moves linearly, second link gear portion 183 engages and drives limiting gear portion 192. As limiting gear portion 192 rotates, cover limiting shaft portion 191 and cover limiting bar 197 rotate, causing limiting roller portion 198 to move while in rolling contact with limiting step 142 of ring cover portion 140. Consequently, limiting roller portion 198 and limiting step 142 of ring cover portion 140 are in rolling contact, preventing foreign matter from being introduced into limiting step 142 of ring cover portion 140 due to wear or scratches. This prevents foreign matter from entering wafers 10 located inside ring cover portion 140, reducing the defect rate.

[0103] The cover limiting shaft portion 191 includes: a limiting gear portion 192 formed so as to mesh with the second connecting rod gear portion 183; a shaft coupling portion 193 axially coupled to the limiting gear portion 192; an elastic member 194 sandwiched between the shaft coupling portion 193 and the limiting gear portion 192; and a height adjustment portion 195 threadedly coupled to the shaft coupling portion 193 and the limiting gear portion 192 to adjust the height of the shaft coupling portion 193. The limiting gear portion 192 and the shaft coupling portion 193 are coaxially arranged. The elastic member 194 can be a coil spring. The height adjustment portion 195 is a height adjustment bolt having a threaded portion formed on the outer side, and a threaded portion is formed inside the limiting gear portion 192 so as to be threadedly coupled to the height adjustment portion 195.

[0104] The elastic member 194 is sandwiched between the shaft coupling portion 193 and the limiting gear portion 192, thereby preventing play noise caused by the assembly space between the shaft coupling portion 193 and the limiting gear portion 192. Furthermore, the height adjustment portion 195 is threadedly coupled to the shaft coupling portion 193 and the limiting gear portion 192, thereby adjusting the height of the shaft coupling portion 193 when the ring cover portion 140 is assembled, thereby preventing assembly tolerances.

[0105] A polygonal anti-rotation portion 192a is formed at the center of the limiting gear portion 192, and a polygonal anti-rotation groove 193a is formed within the shaft coupling portion 193, into which the anti-rotation portion 192a is inserted. The polygonal shapes of the anti-rotation portion 192a and the anti-rotation groove 193a can reduce assembly errors in the axial and rotational directions between the limiting gear portion 192 and the shaft coupling portion 193. Furthermore, by increasing the surface roughness of the anti-rotation portion 192a and the anti-rotation groove 193a, assembly errors can be further reduced.

[0106] Cover restricting shaft portion 191 further includes a position fixing portion 196 that is threadedly engaged with the outer side of shaft coupling portion 193 to restrict height adjustment portion 195 to shaft coupling portion 193. After height adjustment portion 195 is threadedly engaged with shaft coupling portion 193 and the height of shaft coupling portion 193 is adjusted, position fixing portion 196, as it is threadedly engaged with shaft coupling portion 193, presses height adjustment portion 195, thereby fixing the position of height adjustment portion 195. Thus, position fixing portion 196 prevents the height of shaft coupling portion 193 from changing.

[0107] The ring cover 140 further includes a locking pin 145 protruding from the outer periphery of the rotating chuck 120. A locking groove 147 is formed on the outer periphery of the ring cover 140, into which the locking pin 145 is inserted. A tapered portion 145a is formed on the upper side of the locking pin 145 to guide the insertion of the locking groove 147. When the ring cover 140 is placed on the rotating chuck 120, the locking pin 145 is inserted into the locking groove 147, guiding the ring cover 140 into the correct installation position. This improves the convenience of installing the ring cover 140. Furthermore, the ring cover 140 is prevented from sliding circumferentially when the rotating chuck 120 rotates.

[0108] Figure 20 This is a cross-sectional view briefly illustrating a state in which the upper surface of the retaining ring portion is arranged lower than the upper surface of the vacuum chuck portion in the substrate processing apparatus according to the first embodiment of the present invention. Figure 21 The present invention is a cross-sectional view schematically showing a state in which an adsorption pad portion is disposed on a vacuum chuck portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0109] refer to Figures 20 to 21 , the height of the retaining ring portion 13 of the wafer 10 is the same as or lower than the height of the upper surface of the vacuum chuck portion 130. Therefore, when the chuck portion 120 is rotated to rotate the wafer 10 and the processing liquid is sprayed onto the wafer 10, the processing liquid on the upper side of the wafer 10 can be smoothly ejected along the radial direction of the wafer 10 due to the centroidal force. In addition, the processing liquid discharged along the radial direction of the wafer 10 is prevented from hitting the retaining ring portion 13 and being reflected or rebounded toward the rotation center of the wafer 10, thereby preventing the rebounded processing liquid from leaving marks on the surface of the wafer 10. Therefore, the cleaning efficiency of the wafer 10 can be improved.

[0110] The vacuum chuck unit 130 further includes a plurality of adsorption pads 210 (see Figure 22 and Figure 23), the adsorption pad portion is arranged at the vacuum port portion of the vacuum chuck portion 130 to adsorb the retaining ring portion 13 of the wafer 10. A plurality of adsorption pad portions 210 are arranged along the circumferential direction of the vacuum chuck portion 130. A plurality of adsorption pad portions 210 are arranged on the outer periphery of the first vacuum chuck 131. The adsorption pad portion 210 is formed of a cushioning material such as a rubber material, a polyurethane material, etc. The adsorption pad portion 210 adsorbs the retaining ring portion 13 of the wafer 10 to fix it to the vacuum chuck portion 130, thereby preventing the position of the wafer 10 from changing when the vacuum chuck portion 130 rotates.

[0111] The adsorption pad 210 includes an adsorption body 211 , a flatness management portion 213 , and a press-fit fixing portion 215 .

[0112] The suction body 211 is positioned above the vacuum port 136 to hold the wafer 10 in place. The suction body 211 is flatly formed to hold and securely contact the lower surface of the wafer 10. The flatness management portion 213 is formed to slope from the lower periphery of the suction body 211 toward the center, allowing the vacuum port 136 to be inserted. The inclined surface of the vacuum port 136 maintains a spacing of approximately 0.02 mm or less from the adjacent inclined surface of the flatness management portion 213 and is formed at an angle. The upper side of the flatness management portion 213 serves as a contact reference surface for the retaining ring portion 13 of the wafer 10. As the wafer 10 is held in place, the flatness management portion 213 contracts uniformly in the circumferential direction, maintaining the flatness of the suction body 211 and reducing vibration. A press-fit fixing portion 215 is formed in the flatness management portion 213 to be pressed into the fixing groove 137 of the vacuum chuck 130. The fixing groove 137 is formed in a concave shape to surround the vacuum port 136, and the press-fit fixing portion 215 is formed to have a thickness greater than that of the flatness management portion 213 so as to be pressed into the fixing groove 137. The press-fit fixing portion 215 and the fixing groove 137 are formed in an annular shape.

[0113] Figure 22 The present invention is a cross-sectional view schematically showing a state in which a ring cover pressurizes a sealing ring portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0114] refer to Figure 22The vacuum chuck portion 130 is in close contact with the bonding sheet 12 of the wafer 10 and further includes a sealing ring portion 220 pressurized by the ring cover portion 140. The sealing ring portion 220 is formed of a cushioning material. The sealing ring portion 220 is formed in an annular shape along the periphery of the second vacuum chuck 133. When the retaining ring portion 13 of the wafer 10 is placed on the adsorption pad portion 210, the portion of the bonding sheet 12 between the mold 11 of the wafer 10 and the retaining ring portion 13 corresponds to the sealing ring portion 220. The ring cover portion 140 is restrained by the cover restraining portion 190 of the clamping module 150, and the ring cover portion 140 pressurizes the bonding sheet 12 to keep it in close contact with the sealing ring portion 220. The sealing ring portion 220 elastically deforms due to the pressure applied by the ring cover portion 140. Therefore, the pressure applied by the ring cover portion 140 and the restoring force of the sealing ring portion 220 can further compress the bonding sheet 12. This prevents the processing liquid from entering between the ring cover portion 140 and the bonding sheet 12.

[0115] A deformation space 221 is formed inside the sealing ring portion 220 to allow for deformation of the sealing ring portion 220 when pressurized by the ring cover portion 140. At this time, an allowable space 222 is formed on the outer periphery of the second vacuum chuck 133 to allow for deformation of the sealing ring portion 220. Outside the allowable space 222, hook portions 135 are formed to pressurize the two side ends of the sealing ring portion 220. The height of the deformation space 221 can be appropriately varied depending on the amount of pressure applied by the cover pressurizing portion 143 of the ring cover portion 140. The deformation space 221 is formed along the outer periphery of the cover pressurizing portion 143 of the ring cover portion 140. The hook portions 135 restrict the lower side of the sealing ring portion 220, thereby preventing the sealing ring portion 220 from separating from the second vacuum chuck 133.

[0116] Figure 23 FIG1 is a cross-sectional view schematically showing another example of the ring cover portion in the substrate processing apparatus according to the first embodiment of the present invention.

[0117] refer to Figure 23The ring cover portion 140 is formed with a sealing protrusion 144 to closely adhere to the sealing ring portion 220. The sealing protrusion 144 is formed in an annular shape along the outer periphery of the cover pressing portion 143 of the ring cover portion 140. The sealing protrusion 144 is formed in a manner concentric with the cover pressing portion 143 of the ring cover portion 140. The sealing protrusion 144 is formed in a manner opposite to the widthwise center portion of the sealing ring portion 220 or its vicinity. The sealing ring portion 220 is formed along the outer periphery of the ring cover portion 140, so that the cover pressing portion 143 and the sealing protrusion 144 can doubly pressurize the sealing ring portion 220. Therefore, the portion of the bonding sheet 12 between the outermost contour of the mold 11 and the retaining ring portion 13 in the wafer 10 can be doubly closely adhered, thereby improving the sealing performance of the bonding sheet 12 and the ring cover portion 140. Furthermore, the cover pressing portion 143 of the ring cover portion 140 presses the inner edge of the sealing ring portion 220, and the sealing protrusion 144 presses the center portion or the periphery of the sealing ring portion 220, thereby increasing the overlap between the ring cover portion 140 and the sealing ring portion 220. Therefore, the pressing force of the ring cover portion 140 can be reduced to the extent that the overlap of the ring cover portion 140 is increased, and the precision and specifications of the structural components used to increase the pressing force of the ring cover portion 140 can be relatively reduced.

[0118] Figure 24 The present invention is a cross-sectional view schematically showing a state in which a sealing ring portion is connected to a fluid supply portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0119] refer to Figure 24 The vacuum chuck portion 130 further includes a fluid supply portion 223 connected to the sealing ring portion 220 to supply fluid to and exhaust fluid from the deformable space portion 221. Fluids such as air and nitrogen can be supplied to the deformable space portion 221. The fluid supply portion 223 includes a fluid supply line 223a connected to the deformable space portion 221 to supply fluid thereto, and a fluid exhaust line 223b connected to the deformable space portion 221 to exhaust fluid therefrom. When the ring cover portion 140 pressurizes the bonding sheet 12 of the wafer 10 to close against the sealing ring portion 220, as the fluid supply portion 223 supplies fluid to the deformable space portion 221, the pressure of the sealing ring portion 220 due to the fluid supply portion 223 expands, further increasing the pressing force between the cover pressurizing portion 143 of the ring cover portion 140 and the sealing ring portion 220. Therefore, the sealing performance of the ring cover portion 140 and the sealing ring portion 220 can be further improved.

[0120] Figure 25 The present invention is a cross-sectional view schematically showing a state in which a sealing force reinforcing portion is provided to pressurize a sealing ring portion in a substrate processing apparatus according to a first embodiment of the present invention.

[0121] refer to Figure 25The vacuum chuck portion 130 further includes a sealing force reinforcement portion 225a, which is disposed within the deformable space portion 221 to elastically support the sealing ring portion 220. The sealing force reinforcement portion 225a includes a reinforcement rod portion 225a disposed within the deformable space portion 221 to support the sealing ring portion 220, and a reinforcement spring 225b disposed within the reinforcement rod portion to push the reinforcement rod portion 225a toward the sealing ring portion 220. Therefore, when the ring cover portion 140 is pressing against the sealing ring portion 220, the restoring force of the sealing ring portion 220 and the elastic force of the sealing force reinforcement portion 225a are applied to the bonding sheet 12 of the wafer 10, thereby further improving the sealing performance of the ring cover portion 140 and the sealing ring portion 220.

[0122] Figure 26 This is a cross-sectional view schematically illustrating a state in which the inner side of a seal ring portion is embedded in a second vacuum chuck in a substrate processing apparatus according to a first embodiment of the present invention.

[0123] refer to Figure 26 The inner side of the sealing ring portion 220 is embedded below the outer peripheral surface of the vacuum chuck portion 130. At this point, the widthwise center of the sealing ring portion 220 is closer to the outer peripheral surface of the vacuum chuck portion 130. Consequently, the portion of the bonding sheet 12 approximately 1 mm away from the outermost contour of the mold 11 of the wafer 10 faces the widthwise center of the sealing ring portion 220 or its vicinity. This allows the end of the cover pressurizing portion 143 of the ring cover portion 140 to pressurize the widthwise center of the sealing ring portion 220 or its vicinity. Consequently, the amount of deformation of the sealing ring portion 220 increases when pressurizing the ring cover portion 140, thereby relatively reducing the pressure applied by the ring cover portion 140.

[0124] Figure 27 The present invention is a cross-sectional view schematically showing a state in which a ring cover presses a gasket to seal the substrate processing apparatus according to the first embodiment of the present invention.

[0125] refer to Figure 27 A sealing groove 134 is formed on the outer periphery of the vacuum chuck portion 130 to accommodate the sealing ring portion 220. The ring cover portion 140 pressurizes the portion of the bonding sheet 12 opposite the sealing groove 134, thereby sealing the bonding sheet 12 through the tension of the bonding sheet 12. When the ring cover portion 140 pressurizes the portion of the bonding sheet 12 opposite the sealing groove 134, as the bonding sheet 12 expands, the tension of the bonding sheet 12 is applied to the cover pressurizing portion 143 of the ring cover portion 140. Therefore, the tension of the bonding sheet 12 and the pressure of the ring cover portion 140 can prevent the processing liquid from entering between the ring cover portion 140 and the bonding sheet 12.

[0126] A substrate processing method of the substrate processing apparatus according to an embodiment of the present invention having the above-described structure will be described below.

[0127] The substrate processing method of the substrate processing apparatus includes a substrate etching method for etching the wafer 10 using an etching solution and a substrate cleaning method for cleaning the wafer 10 using a cleaning solution. The substrate etching method and the substrate cleaning method will be described in sequence below.

[0128] First, a substrate etching method among substrate processing methods will be described.

[0129] Figure 28 The flowchart briefly illustrates a substrate etching method in a substrate processing method according to a first embodiment of the present invention.

[0130] refer to Figure 28 The transfer unit (not shown) transfers the wafer 10 to the vacuum chuck unit 130 ( S11 ). The transfer unit picks up the wafer 10 and moves it to the upper side of the vacuum chuck unit 130 .

[0131] The transfer unit places the wafer 10 on the vacuum chuck unit 130 ( S12 ). At this time, as the transfer unit descends, the wafer 10 is placed on the placement position of the vacuum chuck unit 130 .

[0132] The ring cover 140 is disposed on the periphery of the vacuum chuck 130 ( S13 ). At this time, as the locking pin 145 of the rotary chuck 120 is inserted into the locking groove 147 of the ring cover 140 , the ring cover 140 is placed on the periphery of the vacuum chuck 130 .

[0133] As the clamping module 150 moves, the wafer 10 is fixed to the vacuum chuck portion 130, and the ring cover portion 140 is fixed to the rotating chuck portion 120 (S14). At this time, the clamping rotating portion 155 rotates the clamping base 151 by a certain angle with the rotation center of the vacuum chuck portion 130 as the center. As the clamping base 151 rotates, the multiple first clamping connecting rod portions 160 and the multiple second clamping connecting rod portions 180 move toward the center portion side of the vacuum chuck portion 130. The multiple wafer limiting portions 170 fix the retaining ring portion 13 of the wafer 10 to the vacuum chuck portion 130, and the multiple cover limiting portions 190 fix the ring cover portion 140 to the rotating chuck portion 120. Therefore, as the clamping base 151 rotates by a certain angle, the wafer limiting portion 170 and the cover limiting portion 190 move simultaneously, simultaneously fixing the wafer 10 and the ring cover portion 140.

[0134] In addition, during the etching process, the moving module 200 is kept stopped, so the vacuum chuck unit 130 and the chucking module 150 do not move.

[0135] The rotary chuck unit 120 and the vacuum chuck unit 130 rotate, and the etching liquid is sprayed onto the wafer 10 to etch the wafer 10 (S15). The etching liquid sprayed onto the wafer 10 flows in the radial direction due to the centripetal force of the vacuum chuck unit 130, while etching the wafer 10. In addition, the ring cover unit 140, as it pressurizes the bonding sheet 12 of the wafer 10, can prevent the etching liquid from penetrating the retaining ring 13 side of the wafer 10. Therefore, it can prevent the etching liquid from damaging the outer structural components of the retaining ring 13.

[0136] The control unit determines whether the etching time of the wafer 10 has ended (S16). If the etching time of the wafer 10 has ended, the spin chuck unit 120 and the vacuum chuck unit 130 stop rotating.

[0137] The moving module 200 returns to its original position, and the clamping module 150 releases the restrictions on the wafer 10 and the ring cover portion 140 (S17, S18). At this time, the clamping rotating portion 155 rotates the clamping base 151 by a certain angle with the rotation center of the vacuum chuck portion 130 as the center. As the clamping base 151 rotates, the multiple first clamping connecting rod portions 160 and the multiple second clamping connecting rod portions 180 move toward the outside of the vacuum chuck portion 130. The multiple wafer limiting portions 170 release the retaining ring portion 13 of the wafer 10 from the vacuum chuck portion 130, and the multiple cover limiting portions 190 release the ring cover portion 140 from the rotating chuck portion 120. Therefore, as the clamping base 151 rotates by a certain angle, the wafer limiting portion 170 and the cover limiting portion 190 move simultaneously, releasing the wafer 10 and the ring cover portion 140 at the same time.

[0138] The discharge unit (not shown) discharges the wafer 10 from the vacuum chuck unit 130 ( S19 ). The discharge unit picks up the wafer 10 and lifts it up, and then moves the wafer 10 to the outside of the vacuum chuck unit 130 .

[0139] Next, a substrate cleaning method among substrate processing methods will be described.

[0140] Figure 29 The flowchart briefly illustrates a substrate cleaning method in a substrate processing method according to a first embodiment of the present invention.

[0141] refer to Figure 29 The transfer unit (not shown) transfers the wafer 10 to the vacuum chuck unit 130 ( S21 ). The transfer unit takes the wafer 10 and moves it to the upper side of the vacuum chuck unit 130 .

[0142] The transfer unit places the wafer 10 on the vacuum chuck 130 (S22). As the transfer unit descends, the wafer 10 is placed on the placement position of the vacuum chuck 130. The ring cover 140 may not be located on the outer periphery of the vacuum chuck 130.

[0143] As the clamping module 150 moves, the wafer 10 is fixed to the vacuum chuck portion 130 (S23). At this time, the clamping rotating portion 155 rotates the clamping base 151 by a certain angle with the rotation center of the vacuum chuck portion 130 as the center. As the clamping base 151 rotates, the plurality of first clamping connecting rod portions 160 move toward the center portion side of the vacuum chuck portion 130. The plurality of wafer limiting portions 170 pressurizes and fixes the retaining ring portion 13 of the wafer 10 to the vacuum chuck portion 130. The plurality of cover limiting portions 190 move simultaneously with the plurality of first clamping connecting rod portions 160 through the rotation of the clamping base 151.

[0144] The moving module 200 moves the vacuum chuck unit 130 or the clamping module 150 to expand the spacing between the molds 11 within the wafer 10 (S24). At this point, the first vacuum chuck 131 creates vacuum pressure to absorb the wafer 10, and the moving module 200 moves the second vacuum chuck 133 or the clamping module 150. With the clamping module 150 securing the retaining ring 13 of the wafer 10 to the outer periphery of the vacuum chuck unit 130, as the moving module 200 moves, the wafer 10 is pressurized by the movement of the moving module 200. At this point, as the bonding sheet 12 of the wafer 10 is radially tightened, the bonding sheet 12 grows radially, and as the bonding sheet 12 grows radially, the spacing between the multiple molds 11 increases.

[0145] The following will describe in detail how the moving module 200 moves the vacuum chuck part 130 or the chucking module 150 .

[0146] The moving module 200 moves the vacuum chuck 130 upward (refer to Figure 3 and Figure 4 ). At this time, the moving module 200 is set on the rotary chuck part 120 to connect to the first vacuum chuck 131 and the second vacuum chuck 133. In addition, the moving module 200 moves the vacuum chuck part 130 upward, and the rotary chuck part 120 is fixed in position. As the moving module 200 is driven, the vacuum chuck part 130 moves upward, and the rotary chuck part 120 does not rise. Therefore, when the retaining ring part 13 of the wafer 10 is fixed, the bonding sheet 12 rises and grows in the radial direction. As the bonding sheet 12 grows in the radial direction, the spacing between the multiple molds 11 increases.

[0147] The moving module 200 moves the clamping module 150 downward (refer to Figure 5). At this time, the moving module 200 is arranged on the outer portion of the vacuum chuck part 130 in a liftable manner. In addition, the outer portion of the rotary chuck part 120 can be provided with a structural member (not shown) that supports the clamping module 150 in a liftable manner. As the moving module 200 is driven, the clamping module 150 moves downward, and the rotary chuck part 120 and the vacuum chuck part 130 do not rise. Therefore, in a state where the positions of the multiple molds 11 of the wafer 10 are fixed to the vacuum chuck part 130, as the retaining ring part 13 descends, the bonding sheet 12 grows in the radial direction. As the bonding sheet 12 grows in the radial direction, the intervals between the multiple molds 11 expand.

[0148] The moving module 200 moves the clamping module 150 upward (refer to Figure 6 ). At this time, the moving module 200 is arranged on the outer portion of the vacuum chuck part 130 in a liftable manner. In addition, the bonding sheet 12 between the outermost contour of the mold 11 in the wafer 10 and the retaining ring part 13 is pressurized by the support body. The support body can adopt the ring cover part 140. The outer portion of the rotating chuck part 120 can be provided with a structural member (not shown) that supports the clamping module 150 in a liftable manner. As the moving module 200 is driven, the clamping module 150 moves downward, and the rotating chuck part 120 and the vacuum chuck part 130 do not rise. Therefore, when the positions of the multiple molds 11 of the wafer 10 are fixed to the vacuum chuck part 130, as the retaining ring part 13 rises, the bonding sheet 12 grows in the radial direction. As the bonding sheet 12 grows in the radial direction, the intervals between the multiple molds 11 expand.

[0149] The moving module 200 includes a medium flow channel portion 201 and a moving rod portion 203 (refer to Figure 8 and Figure 9 ). The medium flow channel portion 201 is formed in the driving portion 110 to supply the moving medium. The medium flow channel portion 201 can be arranged inside the rotating shaft 111 along the length direction of the rotating shaft 111. The moving medium can be air or gas. The moving rod portion 203 is raised and lowered by the pressure of the moving medium and is arranged in a manner to contact the lower portion of the vacuum chuck portion 130. The moving rod portion 203 can be provided with a return spring to return the moving medium to its original position when the pressure of the moving medium is released. A plurality of moving rod portions 203 and the medium flow channel portion 201 can be provided along the circumferential direction of the rotating shaft 111. When the plurality of moving rod portions 203 causes the vacuum chuck portion 130 to be raised and lowered, the vacuum chuck portion 130 can be raised and lowered while maintaining a horizontal state.

[0150] The moving module 200 includes a cylinder portion 205 (refer to FIG. Figure 10). The cylinder portion 205 can be arranged on the lower side of the vacuum chuck portion 130 or on the outer periphery of the vacuum chuck portion 130. The cylinder portion 205 can be provided on the rotary chuck portion 120 to raise and lower the vacuum chuck portion 130, or provided on the rotary chuck portion 120 to move the clamping module 150. As the fluid is supplied to or discharged from the cylinder portion 205, the cylinder portion 205 is driven, so that the vacuum chuck portion 130 or the clamping module 150 can be moved. When the cylinder portion 205 is used as the moving module 200, there is no need to provide an additional medium flow channel portion 201 on the drive portion 110, so the drive portion 110 can be formed with a simple structure.

[0151] The moving module 200 includes an electromagnetic coil portion 207 (see FIG. 1 ) for moving the vacuum chuck portion 130 or the clamping module 150. Figure 11 ). The electromagnetic coil portion 207 can be arranged on the lower side of the vacuum chuck portion 130 or on the outer periphery of the vacuum chuck portion 130. The electromagnetic coil portion 207 can be provided on the rotary chuck portion 120 to lift and lower the vacuum chuck portion 130, or be provided on the rotary chuck portion 120 to move the clamping module 150. As the power is connected to and disconnected from the electromagnetic coil portion 207, the electromagnetic coil portion 207 is driven, so that the vacuum chuck portion 130 or the clamping module 150 can be moved. When the cylinder portion 205 is used as the moving module 200, there is no need to provide an additional medium flow channel portion 201 on the driving portion 110, so the driving portion 110 can be formed with a simple structure.

[0152] The rotary chuck portion 120 and the vacuum chuck portion 130 rotate, and a cleaning liquid is sprayed onto the wafer 10 to remove foreign matter from the wafer 10 (S25). The cleaning liquid sprayed onto the wafer 10 flows in a radial direction by the centroid force of the vacuum chuck portion 130 while cleaning the wafer 10. At this time, the bonding sheet 12 grows in a radial direction by the movement of the moving module 200, so that the intervals between the multiple molds 11 are enlarged. When the cleaning liquid is sprayed onto the multiple molds 11 in a state where the intervals between the multiple molds 11 are enlarged, foreign matter attached to the surface of the mold 11 and foreign matter in the gaps between the multiple molds 11 can be easily removed by the cleaning liquid. Therefore, the foreign matter cleaning performance of the wafer 10 is significantly improved, and the foreign matter removal time can be shortened. In addition, as the cleaning of the wafer 10 is significantly improved, the defective rate of the wafer 10 can be significantly reduced.

[0153] The control unit determines whether the cleaning time of the wafer 10 has ended (S26). If the cleaning time of the wafer 10 has ended, the spin chuck unit 120 and the vacuum chuck unit 130 stop rotating.

[0154] The moving module 200 returns to its original position, and the clamping module 150 releases the restraints on the wafer 10 (S27, S28). At this point, the clamping rotator 155 rotates the clamping base 151 by a predetermined angle about the rotation center of the vacuum chuck 130. As the clamping base 151 rotates, the plurality of first clamping links 160 move outward from the vacuum chuck 130. The plurality of wafer restrainers 170 release the retaining ring 13 of the wafer 10 from the vacuum chuck 130.

[0155] The discharge unit discharges the wafer 10 from the vacuum chuck unit 130 ( S29 ). The discharge unit takes the wafer 10 and lifts it up, and then moves the wafer 10 to the outside of the vacuum chuck unit 130 .

[0156] The present invention has been described with reference to the embodiments shown in the accompanying drawings, but this is merely an example, and those skilled in the art will appreciate that various modifications and equivalent other embodiments are possible.

Claims

1. A substrate processing device, characterized in that: include: Vacuum chuck part for wafer placement; a ring cover portion disposed along an outer periphery of the vacuum chuck portion to pressurize the wafer and thereby seal the outer periphery of the vacuum chuck portion; and The sealing ring part is in close contact with the bonding sheet of the wafer and is pressurized by the ring cover part. The sealing ring portion is provided with a deformation space portion so as to allow the sealing ring portion to deform when the ring cover portion is pressurized. A hanging portion is formed on the vacuum chuck portion, and the hanging portion restricts the lower side of the sealing ring portion to prevent the sealing ring portion from being separated from the vacuum chuck portion.

2. The substrate processing apparatus according to claim 1, wherein: The ring cover portion is formed with a sealing protrusion to closely fit the sealing ring portion.

3. The substrate processing apparatus according to claim 1, wherein: Also includes: The invention also includes a fluid supply portion connected to the sealing ring portion to supply fluid to the deformation space portion and discharge fluid from the deformation space portion.

4. The substrate processing apparatus according to claim 1, wherein: Also includes: The sealing force reinforcing portion is arranged in the deformation space portion to elastically support the sealing ring portion.

5. The substrate processing apparatus according to claim 1, wherein The inner side of the seal ring portion is arranged to be embedded in the lower side of the outer peripheral surface of the vacuum chuck portion.

6. The substrate processing apparatus according to claim 1, wherein: A sealing groove is formed on the outer periphery of the outer peripheral surface of the vacuum chuck portion so as to accommodate the sealing ring portion. The ring cover presses the portion of the bonding sheet facing the sealing groove, thereby sealing the bonding sheet by the tension of the bonding sheet.

7. The substrate processing apparatus according to claim 1, wherein: The ring cover portion prevents the supply liquid from entering the retaining ring portion side of the wafer as the bonding sheet of the wafer is pressurized.

8. The substrate processing apparatus according to claim 1, wherein: Also includes: A plurality of adsorption pads are arranged on the vacuum port of the vacuum chuck to adsorb the retaining ring of the wafer.

9. The substrate processing apparatus according to claim 8, wherein: The adsorption pad portion includes: An adsorption body portion is disposed on the upper side of the vacuum port portion to adsorb the wafer; a flatness management portion formed in a manner inclined from the lower peripheral portion of the adsorption body portion toward the central portion so as to be inserted into the vacuum port portion; and A press-fit fixing portion is formed in the flatness management portion so as to be press-fitted into the fixing groove portion of the vacuum chuck portion.

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