A power detection circuit and integrated chip

Abstract

The application discloses a power detection circuit and an integrated chip. The power detection circuit comprises a first temperature compensation module, an impedance matching network, a detection module and a filter amplification module connected in sequence. The impedance matching network forwards a millimeter wave signal to the detection module. The dynamic unit temperature variation of the second equivalent resistance of the first temperature compensation module is opposite in sign and equal in absolute value to the dynamic unit temperature variation of the first equivalent resistance of the detection module. The first temperature compensation module is used for generating a voltage compensation signal. The impedance matching network forwards the voltage compensation signal and the millimeter wave signal to the detection module after combination. The detection module outputs an original compensation detection signal according to the combined signal. The filter amplification module filters and amplifies the original compensation detection signal to obtain a compensation detection signal. The technical scheme of the application can realize a power detection circuit which can accurately reflect the power of a millimeter wave signal with temperature variation.

Description

Technical Field

[0001] This invention relates to the field of communication technology, and in particular to a power detection circuit and an integrated chip. Background Technology

[0002] In millimeter-wave communication systems, signal amplitude is a crucial indicator for characterizing millimeter waves. In recent years, with the development of communication technology, various modulation techniques have employed millimeter-wave signals with different frequency ranges, power ranges, modulation methods, and signal spectra. Power detection circuits can accurately measure the amplitude of millimeter-wave signals. Detection is the inverse process of modulation, referring to the process of detecting the modulating electromagnetic wave signal from the modulated electromagnetic wave signal.

[0003] Existing power detection circuits exhibit unstable output detection signals as temperature changes, resulting in their output detection signals failing to accurately reflect the power of millimeter-wave signals. Summary of the Invention

[0004] The main objective of this invention is to propose a power detection circuit and an integrated chip, aiming to realize a power detection circuit that can output a stable detection signal as the temperature changes, thereby accurately reflecting the power of millimeter-wave signals.

[0005] To achieve the above objectives, embodiments of the present invention provide a power detection circuit, comprising:

[0006] The first temperature compensation module, impedance matching network, detection module, and filter amplification module are connected sequentially; among them,

[0007] The impedance matching network forwards the millimeter-wave signal to the detection module, the detection module outputs the original detection signal based on the millimeter-wave signal, and the filtering and amplification module filters and amplifies the original detection signal to obtain the detection signal.

[0008] The first equivalent resistance of the detection module changes with the ambient temperature, and the second equivalent resistance of the first temperature compensation module also changes with the ambient temperature. The dynamic unit temperature change of the second equivalent resistance has the opposite sign to that of the first equivalent resistance, but their absolute values ​​are equal. The first temperature compensation module generates a voltage compensation signal based on the dynamic unit temperature change of the second equivalent resistance when the ambient temperature of the detection module changes. The impedance matching network merges the voltage compensation signal and the millimeter-wave signal and forwards the merged signal to the detection module. The detection module outputs the original compensated detection signal based on the merged signal. The filtering and amplification module filters and amplifies the original compensated detection signal to obtain the compensated detection signal.

[0009] To achieve the above objectives, embodiments of the present invention also propose an integrated chip, including any of the power detection circuits described in the above technical solutions.

[0010] The power detection circuit and integrated chip provided in this embodiment of the invention, along with the millimeter-wave signal input impedance matching network, can prevent reflections back to the millimeter-wave signal input system, thus avoiding return loss. The dynamic unit temperature change of the equivalent resistance of the first temperature compensation module with temperature is opposite in sign to the dynamic unit temperature change of the equivalent resistance of the detection module with temperature, but the absolute values ​​are the same. That is, within each temperature range, the first temperature compensation module can compensate for the increase or decrease in the output electrical signal caused by the temperature change of the detection module, thereby obtaining a power detection circuit that can output a stable detection signal as the temperature changes. The first temperature compensation module is used to generate a voltage compensation signal based on the dynamic unit temperature change of the second equivalent resistance when the ambient temperature of the detection module changes. The impedance matching network combines the voltage compensation signal and the millimeter-wave signal and forwards the combined signal to the detection module. The detection module can detect the modulated signal from the combined signal received by the impedance matching network. This modulated signal, which reflects the power of the input millimeter-wave signal, is called the original compensated detection signal. The filtering and amplification module amplifies the original compensated detection signal to obtain the compensated detection signal, thereby improving the sensitivity of power detection. It also filters out high-frequency signals from the original compensated detection signal before outputting a compensated detection signal with a suitable bandwidth. This compensated detection signal reflects the magnitude of the millimeter-wave signal power. Furthermore, the power detection circuit internally includes a first temperature compensation module, eliminating the need for external circuitry for temperature compensation of the power detection circuit. Attached Figure Description

[0011] Figure 1 This is a schematic diagram of a power detection circuit provided in an embodiment of the present invention;

[0012] Figure 2 This is a schematic diagram of another power detection circuit provided in an embodiment of the present invention;

[0013] Figure 3 This is a schematic diagram of a power detection circuit in the prior art. Detailed Implementation

[0014] It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.

[0015] In the following description, the use of suffixes such as "module," "part," or "unit" to denote elements is solely for the purpose of illustrative purposes and has no inherent meaning. Therefore, "module," "part," or "unit" may be used interchangeably.

[0016] As described in the background section, existing power detection circuits exhibit unstable output signals with temperature variations, resulting in inaccurate reflections of millimeter-wave signal power. This is because existing detection circuits employ nonlinear devices to detect the modulated millimeter-wave signal from the modulated millimeter-wave signal. Since the equivalent resistance of these nonlinear devices changes nonlinearly with temperature, and existing technologies typically use resistors that change linearly with temperature as temperature compensation circuits, it cannot be guaranteed that the dynamic unit temperature change of the resistance with temperature is opposite in sign and identical in absolute value to the dynamic unit temperature change of the equivalent resistance of the detection device. Therefore, existing temperature compensation circuits are ineffective at compensating for temperature variations in power detection circuits, leading to inaccurate reflections of millimeter-wave signal power in the output signal.

[0017] To address the aforementioned technical problems, embodiments of the present invention provide a power detection circuit, which aims to output a stable detection signal as temperature changes occur, thereby accurately reflecting the power magnitude of millimeter-wave signals.

[0018] Figure 1 This is a schematic diagram of a power detection circuit provided in an embodiment of the present invention. See also... Figure 1 The system consists of a first temperature compensation module 30, an impedance matching network 10, a detection module 20, and a filtering and amplification module 40, connected sequentially. The impedance matching network 10 forwards the millimeter-wave signal to the detection module 20, which outputs the original detection signal. The filtering and amplification module 40 then filters and amplifies the original detection signal to obtain the final detection signal. The first equivalent resistance of the detection module 20 changes with the ambient temperature, as does the second equivalent resistance of the first temperature compensation module. The dynamic unit temperature change of the second equivalent resistance is opposite in sign to that of the first equivalent resistance, but their absolute values ​​are equal. The first temperature compensation module 30 generates a voltage compensation signal based on the dynamic unit temperature change of the second equivalent resistance when the ambient temperature of the detection module changes. The impedance matching network 10 merges the voltage compensation signal and the millimeter-wave signal, then forwards the merged signal to the detection module 20. The detection module 20 outputs the original compensated detection signal based on the merged signal, and the filtering and amplification module 40 then filters and amplifies the original compensated detection signal to obtain the final compensated detection signal.

[0019] In this embodiment, the signal input terminal 10A of the impedance matching network 10 is used to input millimeter waves. Specifically, electromagnetic waves with wavelengths of 1-10 millimeters are called millimeter waves. They lie in the wavelength range where microwaves and far-infrared waves overlap, thus possessing characteristics of both spectra. With the increasing demand for high bandwidth, high speed, and miniaturization in electronic information systems, the wireless communication spectrum will expand to the millimeter wave band, submillimeter wave band, and terahertz band, making millimeter wave integrated circuits (MWICs) essential core chips. To meet the applications of high-speed gigabit, high-bandwidth communication systems, intelligent transportation systems, vehicle collision avoidance systems, and anti-terrorism security inspection systems, the demand for MWICs is growing. With the reduction in process costs and design and testing costs, MWICs and their system applications have become one of the indispensable advanced technologies in both military and civilian fields. The power detection circuit provided in this embodiment can be used in MWICs to detect the power of millimeter wave signals.

[0020] For example, a power detection circuit can detect the modulated millimeter-wave signal from the modulated millimeter-wave signal using methods such as peak envelope detection, root mean square (RMS) detection, logarithmic detection, and successive detection logarithmic video amplifier (SDLVA), thus obtaining the detected signal and completing the detection process. The obtained detected signal can reflect the magnitude of the millimeter-wave signal power.

[0021] Specifically, the impedance matching network 10 is used between the millimeter-wave signal input system and the load point. In this embodiment, the millimeter-wave signal input system is used to generate millimeter-wave signals. The equivalent impedance of the millimeter-wave signal input system is generally around 50 ohms. Therefore, the impedance of the impedance matching network 10 needs to be configured to be around 50 ohms. This can prevent the millimeter-wave signal input from the impedance matching network 10 from being reflected back to the millimeter-wave signal input system, thus avoiding return loss.

[0022] The detection module 20 can detect the modulation signal from the millimeter-wave signal received by the impedance matching network 10. The modulation signal is the original detection signal that reflects the power of the input millimeter-wave signal. The filtering and amplification module 40 is used to amplify the original detection signal to improve the sensitivity of power detection, and to filter out high-frequency signals in the detection signal before outputting it to obtain a detection signal with a suitable bandwidth. This detection signal can reflect the magnitude of the millimeter-wave signal power.

[0023] The dynamic unit temperature change of the equivalent resistance of the first temperature compensation module 30 with temperature is opposite in sign to that of the dynamic unit temperature change of the equivalent resistance of the detection module 20 with temperature, but the absolute values ​​are the same. That is, within each temperature range, the first temperature compensation module 30 can compensate for the increase or decrease in the output electrical signal of the detection module 20 caused by temperature changes, so as to obtain a power detection circuit that can output a stable detection signal with temperature changes. It should be noted that the temperature compensation signal of the first temperature compensation module 30 is transmitted to the detection module 20 through the impedance matching network 10. That is, the first temperature compensation module 30 generates a voltage compensation signal based on the dynamic unit temperature change of the second equivalent resistance when the ambient temperature of the detection module 20 changes. The impedance matching network 10 combines the voltage compensation signal and the millimeter wave signal and then forwards the combined signal to the detection module 20. The detection module 20 can detect the modulation signal from the combined signal received by the impedance matching network 10. This modulation signal is a detection signal that reflects the power of the input millimeter-wave signal, referred to as the original compensated detection signal. The filtering and amplification module 40 amplifies the original compensated detection signal to obtain a compensated detection signal, thereby improving the sensitivity of power detection. It also filters out high-frequency signals from the original compensated detection signal before outputting a compensated detection signal with a suitable bandwidth. This compensated detection signal reflects the magnitude of the millimeter-wave signal power. Furthermore, the power detection circuit internally includes a first temperature compensation module 30, eliminating the need for external circuitry to perform temperature compensation on the power detection circuit.

[0024] The technical solution provided in this embodiment of the invention includes a millimeter-wave signal input impedance matching network 10, which can prevent reflection back to the millimeter-wave signal input system and thus avoid return loss. The dynamic unit temperature change of the equivalent resistance of the first temperature compensation module 30 with temperature is opposite in sign to the dynamic unit temperature change of the equivalent resistance of the detection module 20 with temperature, but the absolute values ​​are the same. That is, within each temperature range, the first temperature compensation module 30 can compensate for the increase or decrease in the output electrical signal of the detection module 20 caused by temperature changes, so as to obtain a power detection circuit that can output a stable detection signal with temperature changes. The first temperature compensation module 30 is used to generate a voltage compensation signal based on the dynamic unit temperature change of the second equivalent resistance when the ambient temperature of the detection module 20 changes. The impedance matching network 10 merges the voltage compensation signal and the millimeter-wave signal and forwards the merged signal to the detection module 20. The detection module 20 can detect the modulation signal from the combined signal received by the impedance matching network 10. This modulation signal is a detection signal that reflects the power of the input millimeter-wave signal, referred to as the original compensated detection signal. The filtering and amplification module 40 amplifies the original compensated detection signal to obtain a compensated detection signal, thereby improving the sensitivity of power detection. It also filters out high-frequency signals from the original compensated detection signal before outputting a compensated detection signal with a suitable bandwidth. This compensated detection signal reflects the magnitude of the millimeter-wave signal power. Furthermore, the power detection circuit internally includes a first temperature compensation module 30, eliminating the need for external circuitry to perform temperature compensation on the power detection circuit.

[0025] It should be noted that the power detection circuit provided in this embodiment of the invention can operate in a temperature range between -55℃ and 125℃.

[0026] The specific structure of the detector module 20 is detailed below. Figure 2 This is a schematic diagram of another power detection circuit provided in an embodiment of the present invention. Optionally, see... Figure 2The detection module 20 includes a differential amplifier unit 21 and a first load unit 22. The differential amplifier unit 21 is used to extract the DC signal from the even harmonic signals in the millimeter-wave signal and filter out the odd harmonic signals to obtain the original compensated detection signal. The first end of the first load unit 22 is connected to the first power supply VDD1, and the second end of the first load unit 22 is electrically connected to the output terminal 20B of the differential amplifier unit 21. The impedance matching network 10 includes a first signal output terminal 10B1 and a second signal output terminal 10B2, which are used to input millimeter-wave signals with opposite phases. The first signal input terminal 20A1 of the large unit 21 is electrically connected to the first signal output terminal 10B1 of the impedance matching network 10, and the second signal input terminal 20A2 of the differential amplifier unit 21 is electrically connected to the second signal output terminal 10B2 of the impedance matching network 10. The signal output terminal 20B of the differential amplifier unit 21 is used to output the original compensated detection signal. The voltage compensation signal output terminal 30A of the first temperature compensation module 30 is electrically connected to the first signal input terminal 20A1 and the second signal input terminal 20A2 of the differential amplifier unit 21. It should be noted that the output terminal of the differential amplifier unit 21 serves as the signal output terminal 20B of the detection module 20, therefore the output terminal of the differential amplifier unit 21 is also represented by the reference numeral 20B. The first signal input terminal 20A1 and the second signal input terminal 20A2 of the differential amplifier unit 21 serve as the signal input terminal 20A of the detection module 20.

[0027] Specifically, the input and output architecture of the differential amplifier unit 21 adopts an integrated chip differential signal transmission design, which can be matched with the integrated chips of the millimeter-wave system. Furthermore, the first terminal of the first load unit 22 is connected to the first power supply VDD1, and the second terminal of the first load unit 22 is electrically connected to the output terminal 20B of the differential amplifier unit 21, providing a bias voltage for the differential amplifier unit 21. The differential amplifier unit 21 is used to extract the DC signal from the even harmonic signals in the millimeter-wave signal and filter out the odd harmonic signals to obtain the original compensated detection signal, which reflects the power of the input millimeter-wave signal.

[0028] Optionally, see Figure 2 The differential amplifier unit 21 includes a first PNP transistor M1 and a second PNP transistor M2. The collector of the first PNP transistor M1 and the collector of the second PNP transistor M2 are grounded. The base of the first PNP transistor M1 and the base of the second PNP transistor M2 are electrically connected to the voltage compensation signal output terminal 30A of the first temperature compensation module 30. The emitter of the first PNP transistor M1 and the emitter of the second PNP transistor M2 are electrically connected to the second terminal of the first load unit 22.

[0029] Specifically, the bases of the first PNP transistor M1 and the second PNP transistor M2 are used to receive millimeter-wave signals with opposite phases and voltage compensation signals from the impedance matching network 10. The first PNP transistor M1 and the second PNP transistor M2 operate in the deep transistor region. Based on the square-law characteristic of transistors operating in the deep transistor region, the root-mean-square (RMS) detection function is implemented to extract the DC signal from the even-order harmonics of the millimeter-wave signal and filter out the odd-order harmonics to obtain the original compensated detection signal. This original compensated detection signal reflects the power of the input millimeter-wave signal. Specifically, the detection signals output from the emitter of the first PNP transistor M1 and the second PNP transistor M2 are superimposed at the signal output terminal 20B of the detection module 20. The DC signals from the even-order harmonics of the millimeter-wave signal are superimposed, while the odd-order harmonics are canceled out. During this process, the odd harmonic signals that cancel each other out include high-frequency signals. Therefore, the differential amplifier unit 21 can extract the DC signal from the even harmonic signals in the millimeter wave signal and filter out the odd harmonic signals to obtain the original compensated detector signal.

[0030] In this configuration, the first PNP transistor M1 and the second PNP transistor M2 operate in the deep transistor region. When performing root mean square detection based on the square-law characteristic of transistors operating in the deep transistor region, the bases of the first PNP transistor M1 and the second PNP transistor M2 require precise bias voltages. However, the equivalent resistance of the first PNP transistor M1 and the second PNP transistor M2 changes non-linearly with temperature, which in turn causes the turn-on voltage to change non-linearly with temperature. Therefore, the bias voltage required at the bases of the first PNP transistor M1 and the second PNP transistor M2 changes non-linearly with temperature. In this embodiment, the dynamic unit temperature change of the equivalent resistance of the first temperature compensation module 30 with temperature is opposite in sign to the dynamic unit temperature change of the equivalent resistance of the detection module 20 with temperature, and their absolute values ​​are equal. That is, within each temperature change range, the first temperature compensation module 30 generates a voltage compensation signal when the ambient temperature of the first PNP transistor M1 and the second PNP transistor M2 changes, so as to compensate for the increase or decrease of the bias voltage required for the base of the first PNP transistor M1 and the second PNP transistor M2 with temperature change. Thus, the first temperature compensation module 30 can compensate for the increase or decrease of the output electrical signal of the detection module 20 caused by temperature change, so as to obtain a power detection circuit that can output a stable detection signal with temperature change. Thus, the detection signal output by the power detection circuit can accurately reflect the power of the millimeter wave signal.

[0031] Optionally, see Figure 2The first temperature compensation module 30 includes a reference power supply 31 and a second load unit 32. The reference power supply 31 includes a first NMOS transistor M3, a second NMOS transistor M4, and a third NMOS transistor M5. The second load unit 32 includes a third PNP transistor M6 and a first resistor R1. The drain of the first NMOS transistor M3 is electrically connected to the second power supply VDD2, the source of the first NMOS transistor M3 is electrically connected to the drain of the second NMOS transistor M4, the source of the second NMOS transistor M4 is grounded, the gate of the first NMOS transistor M3 is electrically connected to the drain of the first NMOS transistor M3, the gate of the second NMOS transistor M4 is electrically connected to the drain of the second NMOS transistor M4, and the drain of the second NMOS transistor M4 is electrically connected to the drain of the third NMOS transistor M5. The gate of NMOS transistor M5 is electrically connected to the gate of the first NMOS transistor M3. The source of the third NMOS transistor M5 is electrically connected to the first end of the first resistor R1. The second end of the first resistor R1 is electrically connected to the emitter of the third PNP transistor M6. The collector of the third PNP transistor M6 is electrically connected to the third power supply VDD3. The base and emitter of the third PNP transistor M6 are electrically connected. The first end of the first resistor R1 is electrically connected to the voltage compensation signal input terminal 10C of the impedance matching network 10. The impedance matching network 10 is used to combine the voltage compensation signal and the millimeter wave signal and then forward the combined signal to the detector module 20, that is, to send the bases of the first PNP transistor M1 and the second PNP transistor M2.

[0032] Specifically, the first end of the first resistor R1 is electrically connected to the voltage compensation signal input terminal 10C of the impedance matching network 10. The impedance matching network 10 combines the voltage compensation signal and the millimeter-wave signal and transmits them to the bases of the first PNP transistor M1 and the second PNP transistor M2 in the differential amplification unit 21 of the detection module 20. The first PNP transistor M1 and the second PNP transistor M2 operate in the deep transistor region. When the root mean square detection function is achieved based on the square-law characteristic of the transistor operating in the deep transistor region, the bases of the first PNP transistor M1 and the second PNP transistor M2 require precise bias voltages. However, the equivalent resistance of the first PNP transistor M1 and the second PNP transistor M2 changes non-linearly with temperature, which in turn causes the turn-on voltage to change non-linearly with temperature. Therefore, the bias voltage required for the bases of the first PNP transistor M1 and the second PNP transistor M2 changes non-linearly with temperature. In this embodiment, the dynamic unit temperature change of the equivalent resistance of the first temperature compensation module 30 with temperature is opposite in sign to the dynamic unit temperature change of the equivalent resistance of the detector module 20 with temperature, and their absolute values ​​are equal. That is, within each temperature change range, the first temperature compensation module 30 can compensate for the increase or decrease in the bias voltage required for the base of the first PNP transistor M1 and the second PNP transistor M2 to change with temperature. Furthermore, the first temperature compensation module 30 can compensate for the increase or decrease in the output electrical signal of the detector module 20 caused by temperature changes, so as to obtain a detector signal that can accurately reflect the power of the millimeter wave signal.

[0033] Specifically, the first NMOS transistor M3 and the second NMOS transistor M4 are connected in a diode configuration and are in the saturation region, thus acting as resistors. Since their resistance is relatively low, a third NMOS transistor M5, connected in a transistor configuration, is connected here. The third NMOS transistor M5, in the deep linear region, can also act as a resistor, with a resistance greater than that of the first NMOS transistors M3 and M4. The first NMOS transistors M3 and M4 can form a current mirror, outputting a reference current, which is then converted into a reference voltage by the third NMOS transistor M5. The third PNP transistor M6 and the first PNP transistors M1 and M2 in the differential amplifier unit 21 are of the same type to ensure that the dynamic unit temperature change of the equivalent resistance of the first temperature compensation module 30 is opposite in sign to the dynamic unit temperature change of the equivalent resistance of the detector module 20. Furthermore, the absolute values ​​are kept the same by adjusting the value of the first resistor R1. Therefore, the reference voltage signal (voltage compensation signal) output from the first terminal of the first resistor R1 of the first temperature compensation module 30 can compensate for the increase or decrease in the bias voltage required by the bases of the first PNP transistor M1 and the second PNP transistor M2 as temperature changes. Consequently, the first temperature compensation module 30 can compensate for the increase or decrease in the output electrical signal of the detection module 20 caused by temperature changes, thus obtaining a detection signal that accurately reflects the power of the millimeter-wave signal. The amplitude of the reference voltage signal output from the first terminal can be adjusted by adjusting the resistance value of the first resistor R1.

[0034] Optionally, the first temperature compensation module 30 can also be composed of a temperature sensor and a voltage amplification circuit. That is, the temperature sensor detects the temperature, and the voltage amplification circuit outputs a voltage that matches the current temperature to compensate for the increase or decrease in the bias voltage required for the bases of the first PNP transistor M1 and the second PNP transistor M2 as the temperature changes.

[0035] Optionally, the first temperature compensation module 30 can also use a relatively simple voltage divider circuit and a relatively mature low dropout regulator (LDO) to output a temperature compensation voltage to compensate for the increase or decrease in the bias voltage required for the bases of the first PNP transistor M1 and the second PNP transistor M2 as the temperature changes.

[0036] Optionally, see Figure 2 The first load unit 22 includes a first PMOS transistor M7. The source of the first PMOS transistor M7 is electrically connected to the first power supply VDD1, the drain of the first PMOS transistor M7 is electrically connected to the signal output terminal 20B of the differential amplifier unit 21, and the gate of the first PMOS transistor M7 is electrically connected to the drain of the first PMOS transistor M7.

[0037] Specifically, the first PMOS transistor M7 is connected in a diode configuration and is in the saturation region, so it can be used as a resistor. Using the first PMOS transistor M7 as a load, the voltage output from its drain provides the bias voltage for the differential amplifier unit 21. Compared to directly using a resistor as the first load unit, the equivalent resistance of the first PMOS transistor M7 can be changed according to the power of the input millimeter wave by altering its dimensions, and this avoids the problem of high noise levels associated with directly using a resistor for high-frequency signals.

[0038] Optionally, see Figure 2 The first load unit 22 also includes a first capacitor C1. The first electrode of the first capacitor C1 is electrically connected to the source of the first PMOS transistor M7, and the second terminal of the first capacitor C1 is grounded.

[0039] Specifically, the first electrode of the first capacitor C1 is electrically connected to the source of the first PMOS transistor M7, and the second terminal of the first capacitor C1 is grounded, which can avoid interference from power supply ripple and external high-frequency signals.

[0040] Optionally, the detection module 20 further includes a differential isolation unit 23 and a second temperature compensation module 24; the differential isolation unit 23 includes a fourth PNP transistor M8 and a fifth PNP transistor M9, the collector of the fourth PNP transistor M8 is electrically connected to the emitter of the first PNP transistor M1, the collector of the fifth PNP transistor M9 is electrically connected to the emitter of the second PNP transistor M2, and the emitters of the fourth PNP transistor M8 and the fifth PNP transistor M9 are electrically connected to the second terminal of the first load unit 22; the structure of the second temperature compensation module 24 is the same as that of the first temperature compensation module 30, and the voltage compensation signal output terminal 30A of the second temperature compensation module 24 is electrically connected to the base of the fourth PNP transistor M8 and the fifth PNP transistor M9.

[0041] Specifically, the fourth PNP transistor M8 and the fifth PNP transistor M9 operate in the deep transistor region. To achieve root-mean-square detection based on the square-law characteristic of transistors operating in the deep transistor region, the bases of the fourth PNP transistor M8 and the fifth PNP transistor M9 require precise bias voltages. However, the equivalent resistance of the fourth PNP transistor M8 and the fifth PNP transistor M9 changes non-linearly with temperature, which in turn causes the turn-on voltage to change non-linearly with temperature. Therefore, the required bias voltage at the bases of the fourth PNP transistor M8 and the fifth PNP transistor M9 changes non-linearly with temperature. The dynamic unit temperature change of the equivalent resistance of the first temperature compensation module 30 with temperature is opposite in sign to that of the dynamic unit temperature change of the equivalent resistance of the detector module 20 with temperature, and their absolute values ​​are equal. That is, within each temperature change range, the second temperature compensation module 24 and the first temperature compensation module 30 have the same structure. The fourth PNP transistor M8 and the fifth PNP transistor M9 have the same structure as the first PNP transistor and the second PNP transistor. Therefore, the second temperature compensation module 24 can compensate for the increase or decrease in the bias voltage required for the base of the fourth PNP transistor M8 and the fifth PNP transistor M9 to change with temperature. It should be noted that the bases of the fourth PNP transistor M8 and the fifth PNP transistor M9 are connected to the same signal. These are positioned before the differential amplifier unit 21 and the filter amplifier module 40 to provide signal isolation. Furthermore, the detector signals output from the emitters of the fourth PNP transistor M8 and the fifth PNP transistor M9 are superimposed at the signal output terminal 20B of the detector module 20. The DC signals in the even harmonics of the millimeter-wave signal are superimposed, while the odd harmonics cancel each other out. During this process, the canceled odd harmonics include high-frequency signals. Therefore, the differential isolation unit 23 and the differential amplifier unit 21 work together to extract the DC signals from the even harmonics of the millimeter-wave signal and filter out the odd harmonics to obtain the original compensated detector signal.

[0042] It should be noted that when the detection module 20 includes a differential amplifier unit 21 and a first load unit 22, the first equivalent resistance of the detection module 20 changes with the ambient temperature, and the second equivalent resistance of the first temperature compensation module 30 also changes with the ambient temperature. The dynamic unit temperature change of the second equivalent resistance has the opposite sign to that of the dynamic unit temperature change of the first equivalent resistance, and their absolute values ​​are equal. The first temperature compensation module 30 is used to generate a voltage compensation signal based on the dynamic unit temperature change of the second equivalent resistance when the ambient temperature of the detection module 20 changes, to compensate for the increase or decrease in the bias voltage required for the bases of the first PNP transistor and the second PNP transistor to change with temperature.

[0043] When the detection module 20 includes a differential amplifier unit 21, a first load unit 22, a differential isolation unit 23, and a second temperature compensation module 24, the second temperature compensation module 24 and the first temperature compensation module 30 have the same structure. The fourth PNP transistor M8 and the fifth PNP transistor M9 have the same structure as the first and second PNP transistors. Therefore, the second temperature compensation module 24 can compensate for the increase or decrease in the bias voltage required for the base of the fourth PNP transistor M8 and the fifth PNP transistor M9 to change with temperature. The first temperature compensation module 30 is used to compensate for the increase or decrease in the bias voltage required for the base of the first and second PNP transistors to change with temperature.

[0044] Optionally, see Figure 2The filtering and amplification module 40 includes an amplification unit 42 and a filtering unit 41. The amplification unit 42 includes a first current mirror 421, a second current mirror 422, a first current adjustment unit 423, and a second current adjustment unit 424. The sum of the mirror current of the first current mirror 421 and the mirror current of the second current mirror 422 is greater than the input current of the first current mirror 421. The first current mirror 421 includes a second PMOS transistor M10 and a third PMOS transistor M11. The second current mirror 422 includes a fourth PMOS transistor M12 and a fifth PMOS transistor M13. The first current adjustment unit 423 includes a fourth PMOS transistor M10 and a fifth PMOS transistor M11. The second current regulation unit 424 includes a fifth NMOS transistor M14 and a second resistor R2, a fifth NMOS transistor M15 and a third resistor R3, and a filter unit 41 includes a second capacitor C2 and a fourth resistor R4. The gates of the second PMOS transistor M10 and the third PMOS transistor M11 are electrically connected; the sources of the second PMOS transistor M10 and the third PMOS transistor M11 are electrically connected to a fourth power supply; the gates of the third PMOS transistor M11 and the drain of the third PMOS transistor M11 are electrically connected; the gate of the fourth PMOS transistor M12 is electrically connected to the first terminal of the fourth resistor R4. The second terminal of R4 is electrically connected to the gate of the fifth PMOS transistor M13. The sources of the fourth PMOS transistor M12 and the fifth PMOS transistor M13 are electrically connected to the fourth power supply VDD4. The first electrode of the second capacitor C2 is electrically connected to the second terminal of the fourth resistor R4. The second electrode of the second capacitor C2 is electrically connected to the fourth power supply VDD4. The gate of the fourth PMOS transistor M12 is electrically connected to the drain of the fourth PMOS transistor M12. The drain of the fourth PMOS transistor M12 is electrically connected to the drain of the second PMOS transistor M10. The drain of the fourth NMOS transistor M14 is connected to the drain of the third PMOS transistor M10. The drain of transistor 1 is electrically connected; the source of the fourth NMOS transistor M14 is grounded; the gate of the fourth NMOS transistor M14 is electrically connected to the second terminal of the second resistor R2; the drain of the fifth NMOS transistor M15 is electrically connected to the drain of the fifth PMOS transistor M13; the gate of the fifth NMOS transistor M15 is electrically connected to the first terminal of the third resistor R3; the second terminal of the third resistor R3 is electrically connected to the second terminal of the second resistor R2; the signal output terminal 20B of the detector module 20 is electrically connected to the drain of the second PMOS transistor M10; the second terminals of the second resistor R2 and the second terminals of the third resistor R3 are electrically connected to the bias power supply.

[0045] The sum of the mirror current of the first current mirror 421 and the mirror current of the second current mirror 422 is greater than the input current of the first current mirror 421. In this embodiment, the original compensated detection signal output from the signal output terminal 20B of the detection module 20 is used as the input current of the first current mirror 421 and the second current mirror 422. The sum of the mirror current of the first current mirror 421 and the mirror current of the second current mirror 422 is greater than the input current of the first current mirror 421. That is, the first current mirror 421 and the second current mirror 422 amplify the original compensated detection signal output from the signal output terminal 20B of the detection module 20, thereby improving the detection sensitivity of the power detection circuit. Moreover, the power consumption of the first current mirror 421 and the second current mirror 422 is low, not exceeding 3mW. While improving the detection sensitivity of the power detection circuit, the power consumption of the millimeter-wave integrated chip and the system is not increased.

[0046] Optionally, the mirror ratio of the second PMOS transistor M10 and the third PMOS transistor M11 is 3:2, and the mirror ratio of the fourth PMOS transistor M12 and the fifth PMOS transistor M13 is 2:1. When the input current of the first current mirror 421 and the second current mirror 422 is i, the mirror current of the first current mirror 421 is 1.5i, the mirror current of the second current mirror 422 is 0.5i, and the sum of the mirror current of the first current mirror 421 and the mirror current of the second current mirror 422 is 2i, which is greater than the input current i of the first current mirror 421. That is, the first current mirror 421 and the second current mirror 422 amplify the original compensated detection signal output by the signal output terminal 20B of the detection module 20, thereby improving the detection sensitivity of the power detection circuit.

[0047] The first current adjustment unit includes a fourth NMOS transistor M14 and a second resistor R2. The drain current of the third PMOS transistor M11 in the first current mirror 421 can be adjusted by regulating the bias voltage at the base of the fourth NMOS transistor M14. The second resistor R2 is positioned between the bias power supply and the fourth NMOS transistor M14 and is used to adjust the bias voltage at the base of the fourth NMOS transistor M14.

[0048] The second current adjustment unit 424 includes a fifth NMOS transistor M15 and a third resistor R3. By adjusting the dimensions of the fifth NMOS transistor M15 and the fifth PMOS transistor M13, the drain current of the fifth PMOS transistor M13 can be adjusted. Changes in the drain current of the fifth PMOS transistor M13 will alter the voltage amplitude of the compensated detector signal output from the signal output terminal 40B of the filter amplification module 40. The third resistor R3 is positioned between the bias power supply and the fifth PMOS transistor M13 to adjust the bias voltage of the base of the fifth NMOS transistor M15.

[0049] The filtering unit 41 includes a second capacitor C2 and a fourth resistor R4, which are used to filter out high-frequency signals in the original compensated detection signal to obtain a compensated detection signal with appropriate bandwidth.

[0050] Optionally, see Figure 2 The filter amplification module 40 also includes a third temperature compensation module 43. The voltage compensation signal output terminal 30A of the third temperature compensation module 43 is electrically connected to the second terminal of the second resistor R2 and the second terminal of the third resistor R3. The voltage compensation signal output terminal of the third temperature compensation module 43 outputs a voltage signal of 30A as the voltage signal of the bias power supply.

[0051] The third temperature compensation module 43 can compensate for the increase or decrease in the bias voltage required for the bases of the fourth NMOS transistor M14 and the fifth NMOS transistor M15 to change with temperature, so as to obtain a detection signal that can accurately reflect the power of the millimeter wave signal.

[0052] Optionally, the impedance matching network 10 includes a first impedance matching unit 11 and a second impedance matching unit 12. The first impedance matching unit 11 includes a third capacitor C3, a first inductor L1, and a second inductor L2. The second impedance matching unit 12 includes a fourth capacitor C4, a third inductor L3, and a fourth inductor L4. The first electrodes of the third capacitor C3 and the fourth capacitor C4 are used to input millimeter-wave signals with opposite phases. The second electrode of the third capacitor C3 is electrically connected to the first terminal of the first inductor L1, and the second terminal of the first inductor L1 is electrically connected to the first terminal of the second inductor L2. The second terminal of inductor L2 is electrically connected to the voltage compensation signal output terminal 30A of the first temperature compensation module 30. The second terminal of the first inductor L1 is electrically connected to the first signal input terminal 20A1 of the differential amplifier unit 21. The second electrode of the fourth capacitor C4 is electrically connected to the first terminal of the third inductor L3. The second terminal of the third inductor L3 is electrically connected to the first terminal of the fourth inductor L4. The second terminal of the fourth inductor L4 is electrically connected to the voltage compensation signal output terminal 30A of the first temperature compensation module 30. The second terminal of the third inductor L3 is electrically connected to the second signal input terminal 20A2 of the differential amplifier unit 21.

[0053] The input and output architecture of the differential amplifier unit 21 adopts an integrated chip differential signal transmission design, which can be matched with the integrated chip of the millimeter-wave system. Therefore, the impedance matching network 10 includes a first impedance matching unit 11 and a second impedance matching unit 12, which are used to provide millimeter-wave signals with opposite phase to the differential amplifier unit 21.

[0054] Figure 3 This is a schematic diagram of a power detector provided in the prior art. For details, see [link to diagram]. Figure 3The existing power filter includes a fifth capacitor C5, a fifth inductor L5, a sixth inductor L6, an NPN transistor M16, a sixth capacitor C6, a fifth resistor R5, a sixth resistor R6, a seventh capacitor C7, and a seventh inductor L7. One end of the sixth inductor L6 is connected to the reference voltage Vreference, and one end of the fifth resistor R5 is connected to the fifth power supply VDD5. The fifth capacitor C5, fifth inductor L5, and sixth inductor L6 form an impedance matching network. The NPN transistor M16 is located in the deep transistor region for detection. The sixth resistor R6 and the seventh capacitor C7 are used to filter out high-frequency signals. The seventh inductor L7 serves as a negative feedback inductor. The sixth capacitor C6 is used to remove power supply ripple. The NPN transistor M16 operates in the deep transistor region. When implementing root-mean-square (RMS) detection based on the square-law characteristic of transistors operating in this region, the equivalent resistance of the NPN transistor M16 changes non-linearly with temperature, and the required bias voltage at the base of the NPN transistor M16 also changes non-linearly with temperature. However, the resistance of the fifth resistor R5 changes linearly with temperature. The fifth resistor R5 cannot compensate for the increase or decrease in the required bias voltage at the base of the NPN transistor M16 due to temperature changes, causing the existing power detection circuit's output detection signal to inaccurately reflect the input power of the millimeter wave.

[0055] Among them, the NPN transistor M16 is located in the deep transistor region and is used for detection. The voltages of its input signal and output signal satisfy formula (1):

[0056]

[0057] Among them, V T R is the thermal voltage of NPN transistor M16. L The resistance value of the fifth resistor R5 is V. i V is the input millimeter-wave voltage. dd The voltage supplied to the fifth power supply VDD5, I d V represents the DC current output by the NPN transistor M16. out This is the voltage corresponding to the output detector signal.

[0058] The noise power density at the output of the existing power detector circuit satisfies formula (2):

[0059]

[0060] in, Let q be the noise power density at the output terminal, and I be the charge. DC R is the DC current output by NPN transistor M16, R is the resistance of the fifth resistor R5, T is the temperature, and K is the gas constant.

[0061] Formula (2) shows that the noise power density at the output of the existing power detection circuit is directly proportional to the DC current. That is, the larger the DC current in the detected signal after detecting the input millimeter-wave signal, the greater the input power of the millimeter-wave signal. When the fifth resistor is used as a load unit, the noise power density at the output of the power detection circuit is greater, resulting in lower power detection sensitivity for the input millimeter-wave signal. In other words, the existing power detection circuit has the problem that the fifth resistor cannot compensate for the increase or decrease in bias voltage required by the base of the NPN transistor M16 due to temperature changes. Furthermore, when the fifth resistor is used as a load unit, the noise density at the output is high, leading to low power detection sensitivity for the input millimeter-wave signal.

[0062] The power detection circuit provided in this embodiment of the invention has input and output signal voltages that satisfy formula (3). Referring to formula (3), there is a certain proportional relationship between the input millimeter wave power and the output compensation detection signal voltage. This proportional relationship can be adjusted by changing the appropriate size (e.g., width-to-length ratio) of the first PMOS transistor M7 included in the first load unit 22, thereby improving the power detection range of the power detection circuit. Compared with existing power detection circuits, the power detection circuit in this embodiment of the invention has significantly improved detection performance. For example, the detection sensitivity for the input power of millimeter wave signals can reach approximately 100mV / dBm, and the power detection range for millimeter wave signals can reach approximately -8dBm to 15dBm.

[0063]

[0064] Among them, V out V is the voltage value of the detected signal output by the power detection circuit. th,p It is the threshold voltage of the first PMOS transistor M7, V i It is the input millimeter-wave voltage value. It is the width-to-length ratio of the first PMOS transistor M7, I DC It is the DC current output by the power detector circuit, K p is the gas constant.

[0065] The noise power density at the output of the power detector circuit satisfies formula (4):

[0066]

[0067] in, Let q be the noise power density at the output terminal, and I be the charge. DC The DC current output by detector module 20, R is the resistance of the fifth resistor R5, T is the temperature, K is a constant, and gm,PMOS This is the transconductance of the first PMOS transistor M7. DS K is the source-drain current of the first PMOS transistor M7. p is the gas constant.

[0068] As can be seen from formula (2), the noise power density at the output of the existing power detection circuit is directly proportional to the DC current. That is, the larger the DC current in the input millimeter-wave signal, the greater the noise density at the output when the fifth resistor R5 is used as the first load unit, which in turn leads to a decrease in the detection sensitivity of the input power of the millimeter-wave signal. However, as can be seen from formula (4), the noise power density at the output of the power detection circuit provided in this embodiment of the invention is inversely proportional to the DC current. That is, the larger the DC current after the millimeter-wave signal is detected, the greater the power of the input signal, and the smaller the noise power density at the output, which does not lead to a decrease in the detection sensitivity of the input power of the millimeter-wave signal. Therefore, the power detection circuit provided in this embodiment of the invention solves the problem that the fifth resistor R5 of the existing power detection circuit cannot compensate for the increase or decrease of the bias voltage required by the base of the NPN transistor M16 with temperature changes, and the problem that the noise density at the output when the fifth resistor is used as the first load unit is large, which in turn leads to a decrease in the detection sensitivity of the input power of the millimeter-wave signal.

[0069] This invention also provides an integrated chip, including any of the power detection circuits described in the above technical solutions.

[0070] The millimeter-wave integrated chip used in this embodiment of the invention is an integrated chip based on SiGe technology. The power detection circuit described in any of the above technical solutions is integrated on this integrated chip, eliminating the need for external circuitry for temperature compensation. Furthermore, in this power detection circuit, the impedance matching network 10 can prevent the millimeter-wave signal input to the impedance matching network 10 from being reflected back to the millimeter-wave signal input system, thus preventing return loss. The dynamic unit temperature change of the equivalent resistance of the first temperature compensation module 30 with temperature is opposite in sign to the dynamic unit temperature change of the equivalent resistance of the detection module 20 with temperature, but with the same absolute value. That is, within each temperature range, the first temperature compensation module 30 can compensate for the increase or decrease in the output electrical signal caused by the temperature change of the detection module 20, thereby obtaining a power detection circuit that can output a stable detection signal as the temperature changes. The first temperature compensation module 30 generates a voltage compensation signal based on the dynamic unit temperature change of the second equivalent resistance when the ambient temperature of the detection module 20 changes. The impedance matching network 10 merges the voltage compensation signal and the millimeter-wave signal and forwards the merged signal to the detection module 20. The detection module 20 can detect the modulation signal from the merged signal received from the impedance matching network 10. This modulation signal is a detection signal that reflects the power of the input millimeter-wave signal and is called the original compensated detection signal. The filtering and amplification module 40 amplifies the original compensated detection signal to obtain a compensated detection signal, thereby improving the sensitivity of power detection. It also filters out high-frequency signals from the original compensated detection signal before outputting a compensated detection signal with a suitable bandwidth. This compensated detection signal can reflect the magnitude of the millimeter-wave signal power. Therefore, the power detection circuit and integrated chip can output a power detection signal that accurately reflects the magnitude of the millimeter-wave signal power.

[0071] Those skilled in the art will understand that all or some of the steps in the methods disclosed above, as well as the functional modules / units in the systems and devices, can be implemented as software, firmware, hardware, or suitable combinations thereof.

[0072] In hardware implementations, the division between functional modules / units mentioned above does not necessarily correspond to the division of physical components; for example, a first-level physical component may have multiple levels of functionality, or a first-level function or step may be executed collaboratively by several physical components. Some or all physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application-specific integrated circuit. Such software may be distributed on a computer-readable medium, which may include computer storage media (or non-transitory media) and communication media (or transient media). As is known to those skilled in the art, the term computer storage media includes volatile and non-volatile, removable and non-removable media implemented in any method or technology for storing information (such as computer-readable instructions, data structures, program modules, or other data). Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disc (DVD) or other optical disc storage, magnetic cartridges, magnetic tape, disk storage or other magnetic storage devices, or any other medium that can be used to store desired information and is accessible to a computer. Furthermore, as is known to those skilled in the art, communication media typically contain computer-readable instructions, data structures, program modules, or other data in modulated data signals such as carrier waves or other transmission mechanisms, and may include any information delivery medium.

[0073] The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but this does not limit the scope of the invention. Any modifications, equivalent substitutions, and improvements made by those skilled in the art without departing from the scope and spirit of the present invention should be within the scope of the present invention.

Claims

1. A power detection circuit, characterized by comprising: The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device.

2. The power-detection circuit of claim 1, wherein The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. The application relates to a millimeter wave signal detection device. 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The application relates to a millimeter wave The impedance matching network comprises a first signal output end and a second signal output end for inputting millimeter wave signals with opposite phases, the first signal input end of the differential amplification unit is electrically connected with the first signal output end of the impedance matching network, the second signal input end of the differential amplification unit is electrically connected with the second signal output end of the impedance matching network, and the signal output end of the differential amplification unit is used for outputting the original compensation detection signal. The voltage compensation signal output end of the first temperature compensation module is electrically connected with the first signal input end of the differential amplification unit and the second signal input end of the differential amplification unit.

3. The power-detection circuit of claim 2, wherein The differential amplification unit comprises a first PNP type transistor and a second PNP type transistor, the collectors of the first PNP type transistor and the second PNP type transistor are grounded, the bases of the first PNP type transistor and the second PNP type transistor are electrically connected with the voltage compensation signal output end of the first temperature compensation module, and the emitters of the first PNP type transistor and the second PNP type transistor are electrically connected with the second end of the first load unit.

4. The power-detection circuit of claim 2, wherein The first load unit comprises a first PMOS tube, the source of the first PMOS tube is electrically connected with the first power supply, the drain of the first PMOS tube is electrically connected with the signal output end of the differential amplification unit, and the gate of the first PMOS tube is electrically connected with the drain of the first PMOS.

5. The power-detection circuit of claim 4, wherein The first load unit further comprises a first capacitor, the first electrode of the first capacitor is electrically connected with the source of the first PMOS tube, and the second end of the first capacitor is grounded.

6. The power-detection circuit of claim 3, wherein The detection module further comprises a differential isolation unit and a second temperature compensation module. The differential isolation unit comprises a fourth PNP type transistor and a fifth PNP type transistor, the collector of the fourth PNP type transistor is electrically connected with the emitter of the first PNP type transistor, the collector of the fifth PNP type transistor is electrically connected with the emitter of the second PNP type transistor, and the emitters of the fourth PNP type transistor and the fifth PNP type transistor are electrically connected with the second end of the first load unit. The second temperature compensation module has the same structure as the first temperature compensation module, and the voltage compensation signal output end of the second temperature compensation module is electrically connected with the bases of the fourth PNP type transistor and the fifth PNP type transistor.

7. The power-detection circuit of claim 1, wherein The filter amplification module comprises an amplification unit and a filter unit, the amplification unit comprises a first current mirror, a second current mirror, a first current adjusting unit and a second current adjusting unit, and the sum of the mirror currents of the first current mirror and the second current mirror is greater than the input current of the first current mirror; The first current mirror comprises a second PMOS tube and a third PMOS tube, the second current mirror comprises a fourth PMOS tube and a fifth PMOS tube, the first current adjusting unit comprises a fourth NMOS tube and a second resistor, the second current adjusting unit comprises a fifth NMOS tube and a third resistor, and the filter unit comprises a second capacitor and a fourth resistor. The gate of the second PMOS tube and the gate of the third PMOS tube are electrically connected, the source of the second PMOS tube and the source of the third PMOS tube are electrically connected to the fourth power supply, and the gate of the third PMOS tube and the drain of the third PMOS tube are electrically connected; The gate of the fourth PMOS tube is electrically connected to the first end of the fourth resistor, the second end of the fourth resistor is electrically connected to the gate of the fifth PMOS tube, the source of the fourth PMOS tube and the source of the fifth PMOS tube are electrically connected to the fourth power supply, the first electrode of the second capacitor is electrically connected to the second end of the fourth resistor, the second electrode of the second capacitor is electrically connected to the fourth power supply, the gate of the fourth PMOS tube is electrically connected to the drain of the fourth PMOS tube, and the drain of the fourth PMOS tube is electrically connected to the drain of the second PMOS tube; The drain of the fourth NMOS tube is electrically connected to the drain of the third PMOS tube, the source of the fourth NMOS tube is grounded, and the gate of the fourth NMOS tube is electrically connected to the second end of the second resistor; The drain of the fifth NMOS tube is electrically connected to the drain of the fifth PMOS tube, the gate of the fifth NMOS tube is electrically connected to the first end of the third resistor, and the second end of the third resistor is electrically connected to the second end of the second resistor; The signal output end of the detection module is electrically connected to the drain of the second PMOS tube; The second end of the second resistor and the second end of the third resistor are electrically connected to the bias power supply.

8. The power-detection circuit of claim 7, wherein, The filter amplification module further comprises a third temperature compensation module, the voltage compensation signal output end of the third temperature compensation module is electrically connected to the second end of the second resistor and the second end of the third resistor, and the voltage signal output by the voltage compensation signal output end of the third temperature compensation module is used as the voltage signal of the bias power supply; The structure of the third temperature compensation module is the same as that of the first temperature compensation module.

9. The power-detection circuit of claim 2, wherein, The impedance matching network comprises a first impedance matching unit and a second impedance matching unit, the first impedance matching unit comprises a third capacitor, a first inductor and a second inductor, and the second impedance matching unit comprises a fourth capacitor, a third inductor and a fourth inductor; The first electrode of the third capacitor and the first electrode of the fourth capacitor are used to input millimeter wave signals with opposite phases, the second electrode of the third capacitor is electrically connected to the first end of the first inductor, the second end of the first inductor is electrically connected to the first end of the second inductor, the second end of the second inductor is electrically connected to the voltage compensation signal output end of the first temperature compensation module, the second end of the first inductor is electrically connected to the first signal input end of the differential amplification unit, the second electrode of the fourth capacitor is electrically connected to the first end of the third inductor, the second end of the third inductor is electrically connected to the first end of the fourth inductor, the second end of the fourth inductor is electrically connected to the voltage compensation signal output end of the first temperature compensation module, and the second end of the third inductor is electrically connected to the second signal input end of the differential amplification unit.

10. An integrated chip, characterized by The power detection circuit according to any one of claims 1 to 9.

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