Laser temperature measurement method and laser temperature measurement system
Through laser temperature measurement method, the integration intensity of spontaneous radiation spectral is fitted, which solves the problem of low accuracy in the high precision and micro-nano scale of traditional temperature measurement methods, and achieves high accuracy and small-size temperature in low temperature environments Measurement, suitable for laser temperature measurement systems at micro-nano scale.
Patent Information
- Application Number
- CN202111394821.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-11-23
- Publication Date
- 2025-01-03
- Estimated Expiration
- 2041-11-23
AI Technical Summary
The traditional temperature measurement method has low temperature measurement accuracy within the high accuracy and micro-nano scale range, and is not suitable for small-size temperature measurements, especially in low-temperature environments.
Using laser temperature measurement method, the minimum variance fit is performed through the spontaneous radiation spectrum integral intensity of the sample to be tested at different temperatures, combined with the pump laser source and optical components, the spontaneous radiation data is collected using a spectrometer to calculate the peak intensity ratio to determine the temperature. Suitable for contactless, accurate temperature measurement.
It realizes high-precision temperature measurement of small-sized samples in low temperature environments, is suitable for temperature measurement of micro-nano scales, and flexibly adjusts the sample distance through non-contact measurement methods, improving the accuracy and applicability of temperature measurement.
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Figure CN114166366B_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of quantum precision measurement, and in particular to a laser temperature measurement method and a laser temperature measurement system. Background Art
[0002] As temperature measurement has gradually become an important parameter in many fields such as material research and biomedicine, the accuracy requirements for temperature measurement in scientific research have also gradually increased. Traditional temperature measurement methods include thermocouple temperature measurement and infrared temperature measurement. The principle of thermocouple temperature measurement is to use the thermoelectric effect generated by the different temperatures at the two junctions of a semiconductor and measure its thermoelectric potential to achieve temperature measurement. Since thermocouple temperature measurement belongs to contact temperature measurement, it has high requirements for temperature measurement conditions, and changes in the cold end temperature will affect the measurement results. Infrared temperature measurement is based on the principle that all objects above absolute zero emit infrared radiation energy to the surrounding space. It is a method of measuring the surface temperature of an object by measuring the infrared energy radiated by the object itself. Since the results of infrared temperature measurement are average results, it cannot play its temperature measurement function well in the high-precision, micro-nano scale temperature measurement range, and the measurement results are not ideal. Summary of the invention
[0003] Based on this, it is necessary to provide a laser temperature measurement method and a laser temperature measurement system to address the problem that traditional temperature measurement methods have low accuracy and are not suitable for temperature measurement in small spaces.
[0004] A laser temperature measurement method comprises the following steps:
[0005] According to the spectral integral intensity of the spontaneous radiation of the sample to be tested at different temperatures, the fluorescence temperature dependence relationship is fitted by the minimum variance method to obtain the best fitting values A and B;
[0006] Obtain the spectral integrated intensity I1 of the spontaneous radiation generated by the sample to be tested at the current temperature after being irradiated by the laser;
[0007] According to the spectral integrated intensity I1, the formula Determine the peak intensity ratio R, where I2 is the spectrometer measured integrated intensity of the sample at 70K;
[0008] When the target temperature of the sample to be tested is below 180K, the formula Determine the current temperature value T.
[0009] The above-mentioned laser temperature measurement method uses laser as a carrier for information transmission, and uses the spectral integral intensity of the spontaneous radiation generated by the object to be measured after being excited by the laser as information data. Since the measurement unit of the light wavelength is nanometers, the temperature measurement of the sample to be measured is more accurate, and the temperature of the sample to be measured can be analyzed according to the spontaneous radiation generated by the object to be measured even in a low-temperature environment, and it is more suitable for temperature measurement of small sizes in space; using laser measurement, that is, a non-contact measurement method, the relative distance of the sample to be measured can be flexibly adjusted according to actual needs; by fitting the fluorescence temperature dependence relationship according to the spectral integral intensity of the spontaneous radiation of the sample to be measured at different temperatures through the minimum variance method to obtain the best fitting value, the temperature calculation formula in the actual application process is more accurate.
[0010] In one embodiment, the laser temperature measurement method further includes the following steps:
[0011] When the target temperature of the sample to be tested is above 180K, the current temperature value T is obtained by comparing the peak intensity ratio R with the table "RT comparison table", which is obtained by the thermistor calibration method.
[0012] In one embodiment, the fluorescence temperature dependence relationship is fitted by the minimum variance method according to the spectral integrated intensity of the spontaneous radiation of the sample to be tested at different temperatures to obtain A and B, which specifically includes the following steps:
[0013] Take N measurement points and measure the temperature with thermistors to get different temperatures T n The spectral integrated intensity I(T n );Through the mean square error formula And the fitting function i(T) = Be -A / T , find the value of the mean square error E; when the mean square error E is the minimum value, the corresponding A and B are the best fitting values.
[0014] In one embodiment, obtaining the spectral integrated intensity I1 of the sample to be tested at the current temperature after being irradiated by laser specifically includes the following steps:
[0015] A pump laser source emits a laser with a wavelength of 750nm-780nm as incident light into the optical component; the optical component transmits and organizes the incident light to form an outgoing light that irradiates the sample to be tested; the sample to be tested generates spontaneous radiation under the irradiation of the outgoing light, and the spontaneous radiation irradiates the spectrometer; the spectrometer measures the spectral integrated intensity I1 of the sample to be tested at the current temperature after being irradiated, and transmits it to the controller.
[0016] In one embodiment, the pump laser source emits a laser with a wavelength of 750nm-780nm as incident light into the optical component, and further comprises the following steps:
[0017] The parameters of the spectrometer are calibrated at room temperature; the sample to be tested is cooled down, and the actual measured data I2 of the spectrometer of the sample to be tested at 70K is measured.
[0018] In one embodiment, calibrating the parameters of the spectrometer specifically comprises the following steps:
[0019] When the sample to be tested is not placed and the pump laser source is turned off, the fluctuation modulation spectrum of the background of the optical path system is collected by a blackbody radiation source, and the fluctuation modulation spectrum is used as the standard for the spectrometer to measure spectral data later; manual matching is performed to obtain the optimal resolution and the half-width Gaussian distribution parameters of the optimal single spectral line.
[0020] A laser temperature measurement system, comprising:
[0021] A pump laser source, wherein the pump laser source emits continuous laser light as incident light;
[0022] An optical component, wherein the optical component transmits and arranges the incident light to form an outgoing light, wherein the outgoing light is used to irradiate a sample to be tested, and the sample to be tested generates spontaneous radiation under the irradiation of the outgoing light;
[0023] A spectrometer, the spectrometer is used to collect specific spectral lines of the spectrum of the spontaneous radiation;
[0024] A controller is used to collect data collected by the spectrometer, and the collected data is used to calculate the temperature of the sample to be measured.
[0025] In one embodiment, the central wavelength of the incident light is in the range of 750-780 nm.
[0026] In one embodiment, the sample to be tested is a diamond material containing silicon vacancy color centers.
[0027] In one embodiment, the optical component includes a reflector and a semi-transparent mirror, and the incident light is reflected by the reflector and the semi-transparent mirror to form an outgoing light.
[0028] In one embodiment, the reflector is arranged at an angle of 45° to the incident light, the semi-transparent mirror and the reflector are placed parallel to each other, and the side of the sample to be tested illuminated by the outgoing light is perpendicular to the outgoing light.
[0029] In one embodiment, the optical component also includes a focusing lens group, which is arranged between the semi-transparent mirror and the sample to be measured, and the central axis of the focusing lens group coincides with the spontaneous radiation. The focusing lens group is used to adjust the spot size irradiated on the sample to be measured, so as to obtain different measurement areas.
[0030] In one embodiment, the optical component further includes a focusing lens group, which is disposed between the semi-transparent mirror and the spectrometer, wherein a central axis of the focusing lens group coincides with the spontaneous radiation, and the focusing lens group is used to converge the spontaneous radiation onto the spectrometer.
[0031] The above-mentioned laser temperature measurement system uses a pump laser source to emit continuous laser as incident light, and transmits and integrates the incident light through optical components to form output light, so that the output light is irradiated on the sample to be measured; the sensitivity of the anti-Stokes spontaneous radiation spectrum in the spontaneous radiation generated after irradiation with the output light to temperature is utilized to transmit the spontaneous radiation to the spectrometer, the spectrometer collects specific spectral lines of the spectrum of the spontaneous radiation and transmits them to the controller, and the temperature of the sample to be measured is calculated by the controller. Since the defect center in the diamond is a solid-state system existing at the atomic energy level, it is suitable for temperature measurement of micro-nano size. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] Figure 1 A schematic flow chart of a laser temperature measurement method according to an embodiment;
[0033] Figure 2 for Figure 1 A schematic flow chart of the steps included in step S10 in one embodiment;
[0034] Figure 3 for Figure 1 A schematic flow chart of the steps included in step S20 in one embodiment;
[0035] Figure 4 for Figure 1 A schematic flow chart of the steps included in step S00 in one embodiment;
[0036] Figure 5 A schematic diagram showing the relationship between the spectral integrated intensity of spontaneous radiation emitted by a diamond material containing silicon vacancy color centers when irradiated with a laser having a central wavelength of 780 nm at different temperatures and the temperature;
[0037] Figure 6 It is a schematic diagram of the central wavelength and integrated intensity of spontaneous radiation generated when a diamond material containing silicon vacancy color centers is irradiated by a laser source with a central wavelength of 780nm;
[0038] Figure 7The schematic diagram is a diagram of the change in the spectral integrated intensity of the spontaneous radiation of diamond material containing silicon vacancy color centers when the pump laser source is of different wavelengths;
[0039] Figure 8 This is a schematic structural diagram of a laser temperature measurement system according to an embodiment;
[0040] Fig. 9 Schematic diagram of the principle of anti-Stokes spontaneous radiation generated by diamond materials containing silicon vacancy color centers.
[0041] In the figure:
[0042] 01. Pump laser source; 02. Spectrometer; 03. Focusing lens group; 04. Sample to be tested; 05. Reflector; 06. Focusing lens group; 07. Semi-transparent mirror. DETAILED DESCRIPTION
[0043] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present invention, so the present invention is not limited by the specific embodiments disclosed below.
[0044] Please refer to Figure 1 , Figure 1 The figure shows a flow chart of a laser temperature measurement method according to an embodiment of the present invention. The laser temperature measurement method according to this embodiment comprises the following steps:
[0045] S10, according to the spectral integral intensity of the spontaneous radiation of the sample to be measured at different temperatures, the fluorescence temperature dependence is fitted by the minimum variance method to obtain the best fitting values A and B. By measuring the best fitting values A and B, the measurement results in the laser temperature measurement method in this embodiment can be closer to the true value and more accurate in the process of function fitting in the subsequent steps.
[0046] Please refer to Figure 2 Specifically, S10 includes the following steps:
[0047] S10-1, take N measurement points, use thermistors to measure the temperature, and get different temperatures T n The spectral integrated intensity I(T n ).
[0048] S10-2, through the mean square error formula And the fitting function i(T) = Be -A / T , and find the value of the mean square error E.
[0049] S10-3. When the mean square error E is the minimum value, the corresponding A and B are the best fitting values.
[0050] By using the mean square error formula to fit the power function to obtain a close fitting function, the measured point value is converted into a function value, which enriches the temperature information data of the sample to be tested. In the subsequent temperature measurement process, the spectral integral intensity is obtained and the current temperature of the sample to be tested can be obtained through function calculation.
[0051] S20, obtaining the spectral integral intensity I1 of the spontaneous radiation generated by the sample to be tested at the current temperature after being irradiated by the laser. By using laser as an information carrier, since the measurement unit of the wavelength of light is nanometer level, it is more suitable for temperature measurement of small space size. In this embodiment, the sample to be tested is a diamond material containing silicon vacancy color centers. Please refer to Figure 5 , Figure 5 The figure is a schematic diagram showing the variation of the spectrum integral intensity of spontaneous radiation of a diamond material containing silicon vacancy color centers with temperature when it is irradiated by a laser source with a central wavelength of 780 nm. In other embodiments, the sample to be tested may also be any material that can generate spontaneous radiation under laser irradiation. By using laser to irradiate the object to be tested to generate spontaneous radiation and obtain the spectrum integral intensity, the laser temperature measurement method of this embodiment has a wider application range and a wider temperature measurement threshold than the temperature measurement method of the prior art.
[0052] S31, according to the spectral integrated intensity I1, by calculating the formula Determine the peak intensity ratio R, where I2 is the spectral integrated intensity of the sample to be tested at 70K; by comparing with the temperature dependence, the calculation formula is: Determine the current temperature value T. Use the spectral integrated intensity I2 of the sample to be tested at 70K as the standard value to obtain the ratio R of the spectral integrated intensity I1 to I2 at the current temperature. When the target temperature of the sample to be tested is below 180K, calculate R by the formula. Figure 5 It can be seen that when the temperature of the sample to be tested is below 180K, the temperature of the sample to be tested and the spectral integrated intensity of its spontaneous radiation show a relatively obvious linear correlation, that is, the ratio R of the peak intensity changes more obviously. Therefore, when the sample to be tested undergoes slight temperature fluctuations, the temperature changes of the sample to be tested can be more accurately reflected through the calculation formula, and the temperature measurement result is more accurate.
[0053] S32. When the temperature of the sample to be tested is above 180K, the current temperature value T is obtained by comparing the peak intensity ratio R with the table "RT comparison table", and the "RT comparison table" is obtained by the thermistor calibration method. The "RT comparison table" can be obtained by the inventor using the thermistor calibration method after multiple calibrations, or it can be measured using a commercial thermistor temperature measuring device according to the device parameters. Specifically, the method for obtaining the "RT comparison table" is to set a specific temperature T of the sample to be tested, measure the spectral integrated intensity I1 at the temperature, and obtain the peak intensity ratio R, so that R corresponds to T one by one.
[0054] The above-mentioned laser temperature measurement method uses laser as a carrier for information transmission, and uses the spectral integral intensity of the spontaneous radiation generated by the object to be measured after being excited by the laser as information data. Since the measurement unit of the light wavelength is nanometers, the temperature measurement of the sample to be measured is more accurate, and the temperature of the sample to be measured can be analyzed according to the spontaneous radiation generated by the object to be measured even in a low-temperature environment, and it is more suitable for temperature measurement of small sizes in space; using laser measurement, that is, a non-contact measurement method, the relative distance of the sample to be measured can be flexibly adjusted according to actual needs; by fitting the fluorescence temperature dependence relationship according to the spectral integral intensity of the spontaneous radiation of the sample to be measured at different temperatures through the minimum variance method to obtain the best fitting value, the temperature calculation formula in the actual application process is more accurate.
[0055] Please refer to Figure 3 Further, in step S20, the spectral integrated intensity I1 of the sample to be tested at the current temperature after being irradiated by the laser is obtained, which specifically includes the following steps:
[0056] S20-1, the pump laser source emits a laser with a wavelength of 750nm-780nm as incident light into the optical component. Please refer to Figure 6 Since the central wavelength of the anti-Stokes line is around 738nm, incident light with a wavelength less than 750nm will interfere with the measurement results of the laser temperature measurement system. Please refer to Figure 7 It can be seen that when the central wavelength range of the laser emitted by the pump laser source is 750nm-780nm, the anti-Stokes spontaneous radiation energy generated by irradiating the diamond material containing silicon vacancy color centers is large, that is, relatively considerable spontaneous radiation can be formed within this range. Preferably, when the central wavelength of the laser emitted by the pump laser source is 759nm, the intensity of its anti-Stokes line is the largest. Therefore, the central wavelength range of the laser emitted by the pump laser source is 750nm-780nm. Preferably, the central wavelength of the laser emitted by the pump laser source is 759nm.
[0057] S20-2, after the optical component transmits and organizes the incident light, it forms an outgoing light that irradiates the sample to be tested. The setting of the optical component avoids the pump laser source from directly irradiating the sample to be tested, provides a certain degree of buffering for the laser irradiation, and makes the light path transmission process more controllable.
[0058] S20-3. The sample to be tested generates spontaneous radiation under the irradiation of the emitted light, and the spontaneous radiation is irradiated to the spectrometer. The spectrometer is used to analyze the spectral integral intensity of the spontaneous radiation.
[0059] S20-4, the spectrometer measures the spectral integrated intensity I1 of the sample to be tested at the current temperature after being irradiated, and transmits it to the controller. The controller is used to process and calculate I1 to obtain the current temperature of the sample to be tested.
[0060] Please refer to Figure 4 Further, in step S10, the pump laser source emits a laser with a wavelength of 750nm-780nm as incident light into the optical component, and further includes the following steps:
[0061] S00. Calibrate the parameters of the spectrometer at room temperature. Calibrate the parameters of the spectrometer to make the measured results more stable and accurate. Specifically include the following steps:
[0062] S00-1. In the absence of samples and when the pump laser source is turned off, the background fluctuation modulation spectrum of the optical system is collected through a black body radiation source. The fluctuation modulation spectrum is used as the standard for the spectrometer to measure the spectral data later.
[0063] S00-2. Manually match to obtain the optimal resolution and the optimal half-width Gaussian distribution parameters of a single spectrum line. Specifically, for different optical configurations, the number of gratings used for spectral measurement will directly affect the accuracy of the measured spectrum line and the broadening of the actual measurement results. At the same time, the effective focal length of the system, the slit width, the optical phase difference, etc. will also affect the accuracy and broadening of the spectrum line. The resolution is proportional to the grating number and the focal length of the spectrometer, and inversely proportional to the slit width. Therefore, the measured data for different optical configuration systems and different environments will affect the broadening of the measured spectrum lines and the relative spectrum line intensity. In order to achieve high-precision temperature detection, the system parameters need to be matched before the actual measurement. The parameters that need to be matched are mainly the resolution and the Gaussian distribution parameters of the half-width of a single spectrum line. Furthermore, when manually matching the resolution, first refer to the nominal configuration of the spectrometer. For different optical components, different environments, and different wavelength ranges, the actual resolution will have slight differences. Around the nominal value of the spectrometer, the actual value is matched through manual settings, and finally the actual value that is one order of magnitude higher than the nominal value of the spectrometer is obtained, and the measured actual value is used as the actual parameter measured. When matching the Gaussian distribution parameters of the half-width at half maximum of a single spectral line, the measured data needs to be subtracted from the background noise spectrum before matching, and the resolution needs to be fine-tuned to compensate for the fact that some spectral lines cannot be perfectly matched through resolution adjustment. When manually matching, the resolution parameter and the half-width parameter need to be adjusted at the same time to obtain the optimal parameter value.
[0064] S01, cooling the sample to be tested, and measuring the spectrometer measured data I2 of the sample to be tested at 70K. In this embodiment, the sample to be tested is a diamond material containing silicon vacancy color centers, and the temperature can be reduced when it is irradiated by a pump laser source with a central wavelength in a specific range. In other embodiments, the cooling method can also be other methods that can achieve cooling, such as thermocouple cooling.
[0065] like Figure 8 As shown, the present application also provides a laser temperature measurement system in an embodiment, which can be applied to the laser temperature measurement method of any of the above embodiments, including: a pump laser source 01, an optical component, a spectrometer 02 and a controller. The pump laser source 01 emits continuous laser as incident light; the optical component transmits and organizes the incident light to form an outgoing light, which is used to irradiate the sample 04 to be tested, and the sample 04 to be tested generates spontaneous radiation under the irradiation of the outgoing light; the spectrometer 02 is used to collect specific spectral lines of the spectrum of the spontaneous radiation; the controller is used to collect the collected data of the spectrometer 02, and the collected data is used to calculate the temperature of the sample 04 to be tested.
[0066] The above-mentioned laser temperature measurement system uses a pump laser source 01 to emit continuous laser as incident light, and transmits and integrates the incident light through optical components to form output light, so that the output light is irradiated on the sample to be measured 04; the spontaneous radiation is transmitted to the spectrometer 02 by utilizing the sensitivity of the anti-Stokes spontaneous radiation spectrum in the spontaneous radiation generated after being irradiated by the output light to temperature, and the spectrometer 02 collects specific spectral lines of the spectrum of the spontaneous radiation and transmits them to the controller, and the temperature of the sample to be measured 04 is calculated by the controller. Since the defect center in the diamond is a solid-state system existing at the atomic energy level, it is suitable for temperature measurement at micro-nano size.
[0067] In one embodiment, the central wavelength of the incident light is in the range of 750-780 nm. The selection of the central wavelength range has been described above and will not be repeated here. Preferably, the central wavelength of the incident light is 759 nm.
[0068] In one embodiment, the sample 04 to be tested is a diamond material containing silicon vacancy color centers. When the diamond material containing silicon vacancy color centers is used as the sample 04 to be tested, during the laser temperature measurement, since the energy of the anti-Stokes spontaneous radiation of the sample 04 to be tested is greater than the energy of the incident light, please refer to Fig. 9 , Fig. 9 The schematic diagram of the principle of generating anti-Stokes spontaneous radiation of diamond material containing silicon vacancy color center is shown, and the principle is to use the energy difference between high energy level and low energy level to form spontaneous radiation. This embodiment uses the principle that the central wavelength of spontaneous radiation emitted by the sample 04 to be measured at different temperatures is different to realize a laser temperature measurement method. In other embodiments, the sample 04 to be measured can also be any other object that can be excited by laser to generate spontaneous radiation.
[0069] Furthermore, the optical component includes a reflector 05 and a semi-transparent mirror 07, and the incident light is reflected by the reflector 05 and the semi-transparent mirror 07 to form an outgoing light. Specifically, the reflector 05 functions to change the transmission direction of the incident light. More specifically, the reflector 05 is a plane reflector with a diameter of 1 / 2 inch and a bandwidth of 750nm-1100nm. The function of the semi-transparent mirror 07 is to make a part of the incident light reflected by the reflector 05 reflect to the surface of the sample to be tested 04, and to be able to transmit the spontaneous radiation emitted by the sample to be tested 04. More specifically, the semi-transparent mirror 07 is a beam splitter, and its beam splitting ratio is 50:50.
[0070] Furthermore, the reflector 05 is arranged at an angle of 45° to the incident light, the semi-transparent mirror 07 and the reflector 05 are placed parallel to each other, and the side of the sample 04 to be tested that is illuminated by the outgoing light is perpendicular to the outgoing light. This allows the outgoing light to be parallel to the incident light. In other embodiments, the angle between the reflector 05 and the incident light and the positional relationship between the semi-transparent mirror 07 and the reflector 05 can be adjusted according to the actual needs of the optical path system.
[0071] Furthermore, the optical assembly also includes a focusing lens group 03, which is arranged between the semi-transparent mirror 07 and the sample to be measured 04. The central axis of the focusing lens group 03 coincides with the spontaneous radiation. The focusing lens group 03 is used to adjust the size of the light spot irradiated on the sample to be measured 04, so as to obtain different measurement areas. By setting the focusing lens group 03, the size of the measurement area can be adjusted, and the measurement range can be selected according to actual needs, so as to meet different measurement position requirements.
[0072] Furthermore, the optical assembly also includes a focusing lens group 06, which is disposed between the semi-transparent mirror 07 and the spectrometer 02. The central axis of the focusing lens group 06 coincides with the spontaneous radiation, and the focusing lens group 06 is used to converge the spontaneous radiation into the spectrometer 02. By arranging the focusing lens group 06 to converge the spontaneous radiation into the spectrometer 02, the spontaneous radiation can enter the spectrometer 02 to a greater extent, thereby further improving the temperature measurement accuracy of the laser temperature measurement system.
[0073] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.
[0074] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0075] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0076] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.
[0077] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation method.
[0078] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0079] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.
Claims
1. A laser temperature measurement method, characterized in that: The steps include: According to the spectral integral intensity of the spontaneous radiation of the sample to be tested at different temperatures, the fluorescence temperature dependence is fitted by the minimum variance method to obtain the best fitting values A and B; wherein, obtaining the best fitting values A and B includes the following steps: taking N measurement points, and measuring the temperature with thermistors to obtain the best fitting values at different temperatures T n The spectral integrated intensity I(T n );Through the mean square error formula And the fitting function i(T) = Be -A / T , find the value of mean square error E; when the mean square error E is the minimum value, the corresponding A and B are the best fitting values; Obtain the spectral integrated intensity I1 of the spontaneous radiation generated by the sample to be tested at the current temperature after being irradiated by the laser; According to the spectral integrated intensity I1, the formula Determine the peak intensity ratio R, where I2 is the spectrometer measured integrated intensity of the sample at 70K; When the target temperature of the sample to be tested is below 180K, the formula Determine the current temperature value T.
2. The laser temperature measurement method according to claim 1, characterized in that: The laser temperature measurement method also includes the following steps: When the target temperature of the sample to be tested is above 180K, the current temperature value T is obtained by comparing the peak intensity ratio R with the "RT comparison table", which is obtained by the thermistor calibration method.
3. The laser temperature measurement method according to claim 1, characterized in that: Obtaining the spectral integrated intensity I1 of the sample to be tested at the current temperature after being irradiated by the laser specifically includes the following steps: The pump laser source emits a laser with a wavelength of 750nm-780nm as incident light into the optical component; The optical component transmits and organizes the incident light to form an outgoing light that irradiates the sample to be tested; The sample to be tested generates spontaneous radiation under the irradiation of the emitted light, and the spontaneous radiation is irradiated to the spectrometer; The spectrometer measures the spectrum integrated intensity I1 of the sample to be tested at the current temperature after being irradiated, and transmits it to the controller.
4. The laser temperature measurement method according to claim 3, characterized in that: The pump laser source emits a laser with a wavelength of 750nm-780nm as incident light into the optical component, and also includes the following steps: Calibrate the parameters of the spectrometer at room temperature; The sample to be tested is cooled down, and the spectrometer measured integrated intensity I2 of the sample to be tested at 70K is measured.
5. The laser temperature measurement method according to claim 4, characterized in that: The parameters of the spectrometer are calibrated at room temperature, specifically comprising the following steps: When the sample to be tested is not placed and the pump laser source is turned off, a fluctuation modulation spectrum of the background of the optical path system is collected by a black body radiation source, and the fluctuation modulation spectrum is used as a standard for the spectrometer to measure spectral data later; Manual matching was performed to obtain the optimal resolution and the optimal half-width Gaussian distribution parameters of a single spectral line.
6. A laser temperature measurement system, characterized in that: The laser temperature measurement system is applied to the laser temperature measurement method according to any one of claims 1 to 5, comprising: A pump laser source, wherein the pump laser source emits continuous laser light as incident light; An optical component, wherein the optical component transmits and arranges the incident light to form an outgoing light, wherein the outgoing light is used to irradiate a sample to be tested, and the sample to be tested generates spontaneous radiation under the irradiation of the outgoing light; A spectrometer, the spectrometer is used to collect specific spectral lines of the spectrum of the spontaneous radiation; A controller is used to collect data collected by the spectrometer, and the collected data is used to calculate the temperature of the sample to be measured.
7. The laser temperature measurement system according to claim 6, characterized in that: The central wavelength of the incident light is in the range of 750-780 nm.
8. The laser temperature measurement system according to claim 6, characterized in that: The sample to be tested is a diamond material containing silicon vacancy color centers.
9. The laser temperature measurement system according to claim 6, characterized in that: The optical component includes a reflector and a semi-mirror. The incident light is reflected by the reflector and the semi-mirror to form an outgoing light.
10. The laser temperature measurement system according to claim 9, characterized in that: The reflector is arranged at an angle of 45° to the incident light, the semi-transparent mirror and the reflector are placed parallel to each other, and the side of the sample to be tested that is illuminated by the outgoing light is perpendicular to the outgoing light.
11. The laser temperature measurement system according to claim 10, characterized in that: The optical component also includes a focusing lens group, which is arranged between the semi-transparent mirror and the sample to be measured. The central axis of the focusing lens group coincides with the spontaneous radiation. The focusing lens group is used to adjust the size of the light spot irradiated on the sample to be measured, so as to obtain different measurement areas.
12. The laser temperature measurement system according to claim 10, characterized in that: The optical component further comprises a focusing lens group, which is arranged between the semi-transparent mirror and the spectrometer, wherein the central axis of the focusing lens group coincides with the spontaneous radiation, and the focusing lens group is used to converge the spontaneous radiation onto the spectrometer.
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