A temperature measurement method and system based on silicon carbide Raman scattering half-peak

Abstract

The present invention relates to a temperature measurement method and system based on the half-peak value of silicon carbide Raman scattering, comprising: neutron irradiating a silicon carbide crystal to obtain an irradiated silicon carbide crystal; annealing the irradiated silicon carbide crystal at several annealing temperatures to obtain an annealed silicon carbide crystal; obtaining P Raman spectra of the annealed silicon carbide crystal using a Raman spectrometer, wherein P is a positive integer greater than 1; obtaining the half-width at half-maximum value of a characteristic peak of each Raman spectra at a set frequency shift position; obtaining a fitting curve of the half-width as a function of temperature based on each characteristic peak half-width value; obtaining a real-time Raman spectrum of the silicon carbide crystal at a position to be measured after neutron irradiation, and obtaining the temperature value of the position to be measured based on the real-time Raman spectrum and the fitting curve. The present invention has the advantages of high measurement accuracy and fast measurement speed, while also improving the upper limit of temperature measurement and being adaptable to various ultra-high temperature measurement scenarios.

Description

Technical Field

[0001] The present invention relates to the technical field of temperature measurement, and in particular to a temperature measurement method and system based on the half-peak temperature of silicon carbide Raman scattering. Background Art

[0002] Existing temperature measurement technologies, including thermocouples, fiber optic temperature measurement, temperature-indicating paint, and fluorescence temperature measurement, play an important role in routine ambient temperature testing. However, conventional temperature measurement technologies cannot effectively measure the temperature of critical components (such as engine turbine blades) exposed to extreme environments such as high-speed airflow, strong heat flux, high rotation speed, and extremely high temperatures.

[0003] Based on this, a temperature measurement method using neutron-irradiated silicon carbide crystals as sensors and a maximum temperature measurement method based on changes in the lattice parameters of micro-crystals were proposed. X-ray diffraction technology was used to obtain lattice information such as diffraction peaks on the crystal surface or the spacing between the crystal surfaces, and a mapping between temperature and measured physical quantities was established to form a temperature measurement criterion. However, the above methods are limited in the temperature that can be measured, with an upper limit of 1450°C, and they still cannot be used normally in ultra-high temperature environments. Summary of the Invention

[0004] In view of this, the present invention provides a temperature measurement method and system based on the half-peak of silicon carbide Raman scattering, which can effectively improve the upper limit of temperature measurement, and the measurement results are stable, will not be affected by the measurement environment, can adapt to more complex measurement scenarios, and have the characteristics of high measurement accuracy and fast measurement speed.

[0005] To achieve the above object, the present invention provides the following solutions:

[0006] A temperature measurement method based on the half-peak value of silicon carbide Raman scattering, comprising:

[0007] neutron irradiating the silicon carbide crystal to obtain an irradiated silicon carbide crystal;

[0008] performing annealing treatment on the irradiated silicon carbide crystal at several annealing temperatures to obtain annealed silicon carbide crystal;

[0009] Obtaining P Raman spectra of the annealed silicon carbide crystal based on a Raman spectrometer; P is a positive integer greater than 1;

[0010] Obtaining a characteristic peak half-height width value of each of the Raman spectra at a set frequency shift position; obtaining a fitting curve of the half-height width changing with temperature based on each characteristic peak half-height width value;

[0011] A real-time Raman spectrum of the silicon carbide crystal after neutron irradiation at a position to be measured is obtained, and a temperature value of the position to be measured is obtained based on the real-time Raman spectrum and the fitting curve.

[0012] Preferably, the neutron irradiation of the silicon carbide crystal to obtain the irradiated silicon carbide crystal is specifically carried out as follows:

[0013] A vanadium-doped 6H-SiC crystal is selected as the silicon carbide crystal, and the silicon carbide crystal is neutron irradiated to obtain the irradiated silicon carbide crystal, wherein the neutron irradiation dose is greater than or equal to 1.0×10 20 n / cm 2 , irradiation temperature is less than or equal to 200℃.

[0014] Preferably, the annealing treatment of the irradiated silicon carbide crystal at several temperatures to obtain the annealed silicon carbide crystal comprises:

[0015] Segmenting the irradiated silicon carbide crystal to obtain M segmented silicon carbide crystals, where M is the number of annealing temperatures and is a positive integer greater than 1;

[0016] Each of the split silicon carbide crystals is annealed at a different annealing temperature, where each of the split silicon carbide crystals has a different annealing temperature, to obtain M split annealed silicon carbide crystals, wherein the annealed silicon carbide crystals include M split annealed silicon carbide crystals.

[0017] Preferably, the method of obtaining P Raman spectra of the annealed silicon carbide crystal based on a Raman spectrometer, wherein P is a positive integer greater than 1, is as follows:

[0018] For each of the segmented annealed silicon carbide crystals, N Raman spectra are obtained based on a Raman spectrometer, where P=M×N.

[0019] Preferably, the step of obtaining the half-width at half maximum of each characteristic peak of the Raman spectrum at a set frequency shift position and obtaining a fitting curve of the half-width as a function of temperature based on the half-width at half maximum of each characteristic peak comprises:

[0020] Based on a standard Raman spectrum of silicon carbide crystal, a frequency shift position at the half-width of the peak is obtained as the set frequency shift position;

[0021] Performing fitting analysis on the characteristic peak of each Raman spectrum at the set frequency shift position to obtain P analysis graphs;

[0022] Obtaining the analytical value of each analytical graph at the set frequency shift position to obtain P analytical intensities; the analytical intensity is the half-height width of the characteristic peak;

[0023] averaging the N resolved intensities corresponding to each annealing temperature to obtain M average half-height widths;

[0024] Based on the corresponding relationship between the M average half-maximum width values ​​and the M annealing temperatures, curve fitting is performed to obtain the fitting curve.

[0025] The present invention also provides a temperature measurement system based on the half-peak of silicon carbide Raman scattering, comprising:

[0026] A neutron module, performing neutron irradiation on the silicon carbide crystal to obtain an irradiated silicon carbide crystal;

[0027] an annealing module, performing annealing treatment on the irradiated silicon carbide crystal at several annealing temperatures to obtain annealed silicon carbide crystal;

[0028] A Raman mapping module, which obtains P Raman spectra of the annealed silicon carbide crystal based on a Raman spectrometer; P is a positive integer greater than 1;

[0029] A curve fitting module is used to obtain the half-height width of the characteristic peak of each Raman spectrum at a set frequency shift position; and a fitting curve of the half-height width changing with temperature is obtained based on the half-height width of each characteristic peak;

[0030] The temperature calculation module obtains a real-time Raman spectrum of the silicon carbide crystal after neutron irradiation at a position to be measured, and obtains a temperature value of the position to be measured based on the real-time Raman spectrum and the fitting curve.

[0031] Preferably, the neutron module is specifically:

[0032] A vanadium-doped 6H-SiC crystal is selected as the silicon carbide crystal, and the silicon carbide crystal is neutron irradiated to obtain the irradiated silicon carbide crystal, wherein the neutron irradiation dose is greater than or equal to 1.0×10 20 n / cm 2 , irradiation temperature is less than or equal to 200℃.

[0033] Preferably, the annealing module comprises:

[0034] a segmentation unit, which segments the irradiated silicon carbide crystal to obtain M segmented silicon carbide crystals; M is the number of annealing temperatures, and M is a positive integer greater than 1;

[0035] An annealing unit performs annealing treatment at different annealing temperatures on each of the split silicon carbide crystals, where the annealing temperature of each split silicon carbide crystal is different, to obtain M split annealed silicon carbide crystals, wherein the annealed silicon carbide crystals include M split annealed silicon carbide crystals.

[0036] Preferably, the Raman mapping module is specifically:

[0037] For each of the segmented annealed silicon carbide crystals, N Raman spectra are obtained based on a Raman spectrometer, where P=M×N.

[0038] Preferably, the curve fitting module includes:

[0039] A frequency shift position setting unit is configured to obtain a frequency shift position at a peak half-width based on a standard Raman spectrum of a silicon carbide crystal as the set frequency shift position;

[0040] an analysis unit, performing fitting analysis on the characteristic peak of each Raman spectrum at the set frequency shift position to obtain P analysis graphs;

[0041] an analysis value unit, obtaining an analysis value of each analysis graph at the set frequency shift position to obtain P analysis intensities; the analysis intensity is the half-height width of the characteristic peak;

[0042] an average value unit, averaging the N analytical intensities corresponding to each annealing temperature to obtain M average half-maximum widths;

[0043] The fitting unit performs curve fitting based on the corresponding relationship between the M average half-maximum width values ​​and the M annealing temperatures to obtain the fitting curve.

[0044] According to the specific embodiments provided by the present invention, the present invention discloses the following technical effects:

[0045] The present invention relates to a temperature measurement method and system based on the half-peak value of silicon carbide Raman scattering, comprising: neutron irradiating a silicon carbide crystal to obtain an irradiated silicon carbide crystal; annealing the irradiated silicon carbide crystal at several annealing temperatures to obtain an annealed silicon carbide crystal; obtaining P Raman spectra of the annealed silicon carbide crystal using a Raman spectrometer, wherein P is a positive integer greater than 1; obtaining the half-width at half-maximum value of a characteristic peak of each Raman spectra at a set frequency shift position; obtaining a fitting curve of the half-width as a function of temperature based on each characteristic peak half-width value; obtaining a real-time Raman spectrum of the silicon carbide crystal at a position to be measured after neutron irradiation, and obtaining the temperature value of the position to be measured based on the real-time Raman spectrum and the fitting curve. The present invention has the advantages of high measurement accuracy and fast measurement speed, while also improving the upper limit of temperature measurement and being adaptable to various ultra-high temperature measurement scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0047] Figure 1 This is a flow chart of the temperature measurement method based on the half-peak temperature of silicon carbide Raman scattering of the present invention;

[0048] Figure 2This is a schematic diagram of splitting silicon carbide crystals according to the present invention;

[0049] Figure 3 Schematic diagram of the standard Raman spectrum of the present invention;

[0050] Figure 4 Schematic diagram of the Raman spectrum obtained at various annealing temperatures of the present invention;

[0051] Figure 5 It is a schematic diagram of the analytical diagram of the present invention;

[0052] Figure 6 Schematic diagram of the fitting curve of the present invention;

[0053] Figure 7 A schematic diagram of the software interface provided by the present invention;

[0054] Figure 8 This is a structural diagram of the temperature measurement system based on the half-peak of silicon carbide Raman scattering in the present invention.

[0055] Explanation of symbols: 1-neutron module, 2-annealing module, 3-Raman spectrum module, 4-fitting curve module, 5-temperature calculation module. DETAILED DESCRIPTION

[0056] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0057] The purpose of the present invention is to provide a temperature measurement method and system based on the half-peak of silicon carbide Raman scattering, which can effectively improve the upper limit of temperature measurement, and the measurement results are stable, will not be affected by the measurement environment, can adapt to more complex measurement scenarios, and have the characteristics of high measurement accuracy and fast measurement speed.

[0058] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0059] Figure 1 The present invention provides a temperature measurement method based on the half-peak temperature of silicon carbide Raman scattering, as shown in the flow chart of the present invention. The method comprises:

[0060] Step S1, performing neutron irradiation on a silicon carbide crystal to obtain an irradiated silicon carbide crystal.

[0061] In this embodiment, a vanadium-doped 6H-SiC crystal is selected as the silicon carbide crystal, and the silicon carbide crystal is neutron irradiated to obtain the irradiated silicon carbide crystal. The irradiation dose of the neutron irradiation is greater than or equal to 1.0×10 20 n / cm 2 , the irradiation temperature is less than or equal to 200℃, and the neutrons in the neutron irradiation are full-energy spectrum neutrons.

[0062] Step S2: performing annealing treatment at several annealing temperatures on the irradiated silicon carbide crystal to obtain annealed silicon carbide crystal.

[0063] Specifically, step S2 includes:

[0064] Step S21, dividing the irradiated silicon carbide crystal to obtain M divided silicon carbide crystals; M is the number of annealing temperatures, and M is a positive integer greater than 1. In this embodiment, the divided silicon carbide crystals are square crystals with a side length of 0.2-10 mm, specifically a size of 0.2 mm × 0.2 mm, as shown in FIG. Figure 2 shown.

[0065] Step S22 , performing annealing treatment at different annealing temperatures on each of the split silicon carbide crystals, wherein the annealing temperature of each split silicon carbide crystal is different, to obtain M split annealed silicon carbide crystals, wherein the annealed silicon carbide crystals include M split annealed silicon carbide crystals.

[0066] In this embodiment, M is set to 12, 10 annealing temperatures are selected, and reference analysis is performed by adding Raman spectra without irradiation and without annealing treatment.

[0067] Preferably, in this embodiment, after the annealing treatment, each of the divided annealed silicon carbide crystals is further subjected to mechanical polishing and chemical polishing to remove the surface oxide layer, thereby obtaining M polished silicon carbide crystals.

[0068] Step S3: obtaining P Raman spectra of the annealed silicon carbide crystal based on a Raman spectrometer; P is a positive integer greater than 1.

[0069] Furthermore, the step S3 is specifically as follows:

[0070] For each of the polished silicon carbide crystals, N Raman spectra are obtained based on the Raman spectrometer. In this embodiment, 10 test points are selected on each of the polished silicon carbide crystals according to the minimum spacing of 10 μm based on the Raman spectrometer, and a total of P = 10 * 10 + 2 = 102 Raman spectra are obtained, as shown in the following example: Figure 4 As shown, Figure 4 (a) is a schematic diagram of the Raman spectrum of silicon carbide crystal that has not been neutron irradiated and annealed. Figure 4(b) is a schematic diagram of the Raman spectrum of silicon carbide crystal that has been neutron irradiated but not annealed. Figure 4 (c) is a schematic diagram of the Raman spectrum of the polished silicon carbide crystal when the annealing temperature is 600°C. Figure 4 (d) is a schematic diagram of the Raman spectrum of the polished silicon carbide crystal when the annealing temperature is 700°C. Figure 4 (e) is a schematic diagram of the Raman spectrum of the polished silicon carbide crystal when the annealing temperature is 800°C. Figure 4 (f) is a schematic diagram of the Raman spectrum of the polished silicon carbide crystal when the annealing temperature is 900°C. Figure 4 (g) is a schematic diagram of the Raman spectrum of the polished silicon carbide crystal when the annealing temperature is 1100°C. Figure 4 (h) is a schematic diagram of the Raman spectrum of the polished silicon carbide crystal when the annealing temperature is 1300°C. Figure 4 (i) is a schematic diagram of the Raman spectrum of the polished silicon carbide crystal when the annealing temperature is 1500°C, Figure 4 (j) is a schematic diagram of the Raman spectrum of the polished silicon carbide crystal when the annealing temperature is 1600°C, Figure 4 (k) is a schematic diagram of the Raman spectrum of the polished silicon carbide crystal when the annealing temperature is 1700°C. Figure 4 (l) is a schematic diagram of the Raman spectrum of the polished silicon carbide crystal when the annealing temperature is 1750°C.

[0071] In this embodiment, the Raman spectrometer is equipped with a 532 nm laser and the spectrum range collected is 200 to 2500 cm -1 , the spectral resolution range is 0.1~2cm -1 , laser power is 0.1~0.25W, and exposure time is 0.1~10s.

[0072] Step S4, obtaining the half-maximum width of the characteristic peak of each Raman spectrum at the set frequency shift position; and obtaining a fitting curve of the half-maximum width changing with temperature based on the half-maximum width of each characteristic peak.

[0073] Preferably, step S4 includes:

[0074] Step S41, based on the standard Raman spectrum of silicon carbide crystal, obtain the frequency shift position at the half-maximum width of the peak as the set frequency shift position. The standard Raman spectrum is as follows Figure 3 As shown, in this embodiment, the frequency shift position is set to 786cm -1 Place.

[0075] Step S42 , performing fitting analysis on the characteristic peak of each Raman spectrum at the set frequency shift position to obtain P analysis graphs.

[0076] Specifically, the fluorescence background interference in each Raman spectrum is removed by using the adaptive iterative weighted partial least squares method to obtain P denoised spectra. -1 Gauss fitting is performed on the curve within the range to obtain P analytical graphs. Figure 5 As shown, Figure 5 A schematic diagram of the analytical diagram of the Raman spectra obtained at different annealing temperatures is given in FIG. Figure 5 (a) is the analysis diagram when the annealing temperature is 850℃. Figure 5 (b) is the analysis diagram when the annealing temperature is 1000℃. Figure 5 (c) is the analysis diagram when the annealing temperature is 1300℃. Figure 5 (d) is the analysis diagram when the annealing temperature is 1500℃. Figure 5 (e) is the analysis diagram when the annealing temperature is 1650℃. Figure 5 (f) is the analysis diagram when the annealing temperature is 1700℃.

[0077] Step S43, obtaining the analytical value of each of the analytical graphs at the set frequency shift position to obtain P analytical intensities; the analytical intensity is the half-height width of the characteristic peak.

[0078] Step S44 , averaging the N analytical intensities corresponding to each annealing temperature to obtain M average half-maximum widths.

[0079] Step S45, performing curve fitting based on the corresponding relationship between the M average half-height width values ​​and the M annealing temperatures to obtain the fitting curve. Figure 6 shown.

[0080] Step S5: obtaining a real-time Raman spectrum of the silicon carbide crystal after neutron irradiation at the position to be measured, and obtaining a temperature value of the position to be measured based on the real-time Raman spectrum and the fitting curve.

[0081] Specifically, based on the fitting curve, a polynomial calibration equation is obtained, wherein the independent variable of the polynomial calibration equation is the half-height width value and the dependent variable is the temperature. The polynomial calibration equation is edited into a temperature calculation software. The interface of the temperature calculation software is as follows: Figure 7 As shown in the figure, by inputting the half-height width value, the corresponding temperature can be obtained.

[0082] Figure 8 This is a structural diagram of the temperature measurement system based on the half-peak of silicon carbide Raman scattering. As shown in the figure, the present invention provides a temperature measurement system based on the half-peak of silicon carbide Raman scattering, including: a neutron module 1, an annealing module 2, a Raman mapping module 3, a fitting curve module 4, and a temperature calculation module 5.

[0083] The neutron module 1 performs neutron irradiation on the silicon carbide crystal to obtain an irradiated silicon carbide crystal.

[0084] The annealing module 2 performs annealing treatment on the irradiated silicon carbide crystal at several annealing temperatures to obtain annealed silicon carbide crystal.

[0085] The Raman mapping module 3 obtains P Raman spectra of the annealed silicon carbide crystal based on a Raman spectrometer; P is a positive integer greater than 1.

[0086] The fitting curve module 4 obtains the half-width at half maximum of each characteristic peak of the Raman spectrum at a set frequency shift position; and obtains a fitting curve of the half-width as a function of temperature based on the half-width at half maximum of each characteristic peak.

[0087] The temperature calculation module 5 obtains a real-time Raman spectrum of the silicon carbide crystal after neutron irradiation at the position to be measured, and obtains a temperature value of the position to be measured based on the real-time Raman spectrum and the fitting curve.

[0088] As an optional embodiment, the neutron module 1 of the present invention is specifically:

[0089] A vanadium-doped 6H-SiC crystal is selected as the silicon carbide crystal, and the silicon carbide crystal is neutron irradiated to obtain the irradiated silicon carbide crystal, wherein the neutron irradiation dose is greater than or equal to 1.0×10 20 n / cm 2 , irradiation temperature is less than or equal to 200℃.

[0090] As an optional embodiment, the annealing module 2 of the present invention includes: a segmentation unit and an annealing unit.

[0091] The segmentation unit segments the irradiated silicon carbide crystal to obtain M segmented silicon carbide crystals; M is the number of annealing temperatures, and M is a positive integer greater than 1.

[0092] The annealing unit performs annealing treatment at different annealing temperatures on each of the split silicon carbide crystals, and the annealing temperature of each split silicon carbide crystal is different, to obtain M split annealed silicon carbide crystals, and the annealed silicon carbide crystals include M split annealed silicon carbide crystals.

[0093] As an optional embodiment, the Raman mapping module 3 of the present invention is specifically:

[0094] For each of the segmented annealed silicon carbide crystals, N Raman spectra are obtained based on a Raman spectrometer, where P=M×N.

[0095] As an optional implementation, the curve fitting module 4 of the present invention includes: a frequency shift position setting unit, an analysis unit, an analysis value unit, an average value unit and a fitting unit.

[0096] The frequency shift position setting unit obtains the frequency shift position at the half-width of the peak based on the standard Raman spectrum of the silicon carbide crystal as the set frequency shift position.

[0097] The analyzing unit performs fitting analysis on the characteristic peak of each Raman spectrum at the set frequency shift position to obtain P analysis graphs.

[0098] The analytical value unit obtains the analytical value of each analytical graph at the set frequency shift position to obtain P analytical intensities; the analytical intensities are the half-height widths of the characteristic peaks.

[0099] The averaging unit averages the N analytical intensities corresponding to each annealing temperature to obtain M average half-maximum widths.

[0100] The fitting unit performs curve fitting based on the correspondence between the M average half-maximum widths and the M annealing temperatures to obtain the fitting curve.

[0101] 1) The present invention utilizes the change in the half-width of the Raman characteristic peak to achieve peak temperature measurement. The measurement method of the present invention is applicable to tests in complex environments with a maximum temperature of 1750°C.

[0102] 2) The silicon carbide crystals in the present invention have stable physical and chemical properties, are not prone to chemical reactions at high temperatures, and have stable physical phases. They are suitable for temperature testing in multiple atmosphere high-temperature scenarios. They have important application prospects and strong applicability in high-temperature testing of working systems containing turbines and internal combustion engines in numerous closed working systems, such as aircraft, ships, automobiles, and power equipment and facilities.

[0103] 3) The present invention uses the half-width of the characteristic peak of the Raman spectrum to interpret the temperature. The Raman spectrum test cycle is short, the efficiency is high, it is less affected by objective factors, the basic data collection volume is large, the test data is stable, the temperature calibration equation is simple to construct, the temperature reading accuracy is high, and the temperature measurement speed is fast.

[0104] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Reference can be made to the common and similar parts between the various embodiments. For the systems disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple, and the relevant parts can be referred to the method description.

[0105] This document uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only intended to help understand the method and core concept of the present invention. At the same time, those skilled in the art will find that the specific implementation methods and application scopes may vary based on the concept of the present invention. In summary, the contents of this specification should not be construed as limiting the present invention.

Claims

1. A temperature measurement method based on the half-peak of silicon carbide Raman scattering, characterized in that: include: neutron irradiating the silicon carbide crystal to obtain an irradiated silicon carbide crystal; performing annealing treatment on the irradiated silicon carbide crystal at several annealing temperatures to obtain annealed silicon carbide crystal; Obtaining P Raman spectra of the annealed silicon carbide crystal based on a Raman spectrometer; P is a positive integer greater than 1; Obtaining the half-maximum width of the characteristic peak of each Raman spectrum at a set frequency shift position; Obtaining a fitting curve of the half-height width as a function of temperature based on the half-height width of each characteristic peak; Acquire a real-time Raman spectrum of the silicon carbide crystal after neutron irradiation at a position to be measured, and obtain a temperature value of the position to be measured based on the real-time Raman spectrum and the fitting curve; The annealing treatment of the irradiated silicon carbide crystal at several temperatures to obtain the annealed silicon carbide crystal comprises: Segmenting the irradiated silicon carbide crystal to obtain M segmented silicon carbide crystals, where M is the number of annealing temperatures and is a positive integer greater than 1; performing annealing treatment at different annealing temperatures on each of the split silicon carbide crystals, wherein the annealing temperature of each split silicon carbide crystal is different, to obtain M split annealed silicon carbide crystals, wherein the annealed silicon carbide crystals include M split annealed silicon carbide crystals; The method of obtaining P Raman spectra of the annealed silicon carbide crystal based on a Raman spectrometer, wherein P is a positive integer greater than 1, is specifically: N test points are selected for each of the split annealed silicon carbide crystals, and N Raman spectra are obtained based on a Raman spectrometer, where P=M×N.

2. The temperature measurement method according to claim 1, characterized in that: The neutron irradiation of the silicon carbide crystal to obtain the irradiated silicon carbide crystal is specifically carried out as follows: A vanadium-doped 6H-SiC crystal is selected as the silicon carbide crystal, and the silicon carbide crystal is neutron irradiated to obtain the irradiated silicon carbide crystal, wherein the neutron irradiation dose is greater than or equal to 1.0×10 20 n / cm 2 , irradiation temperature is less than or equal to 200℃.

3. The temperature measurement method according to claim 1, characterized in that: The method further comprises obtaining a half-maximum width (FWHM) value of a characteristic peak of each Raman spectrum at a set frequency shift position; A fitting curve of the half-height width as a function of temperature is obtained based on the half-height width of each characteristic peak, including: Based on a standard Raman spectrum of silicon carbide crystal, a frequency shift position at the half-width of the peak is obtained as the set frequency shift position; Performing fitting analysis on the characteristic peak of each Raman spectrum at the set frequency shift position to obtain P analysis graphs; Obtaining the analytical value of each analytical graph at the set frequency shift position to obtain P analytical intensities; the analytical intensity is the half-height width of the characteristic peak; averaging the N resolved intensities corresponding to each annealing temperature to obtain M average half-height widths; Based on the corresponding relationship between the M average half-maximum width values ​​and the M annealing temperatures, curve fitting is performed to obtain the fitting curve.

4. A temperature measurement system based on the half-peak of silicon carbide Raman scattering, characterized in that: The system is used to implement the temperature measurement method based on the half-peak of silicon carbide Raman scattering according to any one of claims 1 to 3, comprising: A neutron module, performing neutron irradiation on the silicon carbide crystal to obtain an irradiated silicon carbide crystal; an annealing module, performing annealing treatment on the irradiated silicon carbide crystal at several annealing temperatures to obtain annealed silicon carbide crystal; A Raman mapping module, which obtains P Raman spectra of the annealed silicon carbide crystal based on a Raman spectrometer; P is a positive integer greater than 1; A curve fitting module is used to obtain the half-height width of the characteristic peak of each Raman spectrum at a set frequency shift position; and a fitting curve of the half-height width changing with temperature is obtained based on the half-height width of each characteristic peak; The temperature calculation module obtains a real-time Raman spectrum of the silicon carbide crystal after neutron irradiation at a position to be measured, and obtains a temperature value of the position to be measured based on the real-time Raman spectrum and the fitting curve.

5. The temperature measurement system according to claim 4, characterized in that: The neutron module is specifically: A vanadium-doped 6H-SiC crystal is selected as the silicon carbide crystal, and the silicon carbide crystal is neutron irradiated to obtain the irradiated silicon carbide crystal, wherein the neutron irradiation dose is greater than or equal to 1.0×10 20 n / cm 2 , irradiation temperature is less than or equal to 200℃.

6. The temperature measurement system according to claim 4, characterized in that The curve fitting module includes: A frequency shift position setting unit is configured to obtain a frequency shift position at a peak half-width based on a standard Raman spectrum of a silicon carbide crystal as the set frequency shift position; an analysis unit, performing fitting analysis on the characteristic peak of each Raman spectrum at the set frequency shift position to obtain P analysis graphs; an analysis value unit, obtaining an analysis value of each analysis graph at the set frequency shift position to obtain P analysis intensities; the analysis intensity is the half-height width of the characteristic peak; an average value unit, averaging the N analytical intensities corresponding to each annealing temperature to obtain M average half-maximum widths; The fitting unit performs curve fitting based on the corresponding relationship between the M average half-maximum width values ​​and the M annealing temperatures to obtain the fitting curve.

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