Semiconductor processing apparatus, semiconductor processing system, and semiconductor edge processing method

Abstract

The present invention provides a semiconductor wafer edge surface treatment device, which includes a lower chamber having a first support area for supporting a wafer, an upper chamber having a second support area, and a first channel formed by the first support area, the second support area and their edge regions. The upper chamber and the lower chamber are closed so that the wafer is placed between the first support area and the second support area. The first channel provides a first space for flowing one or more chemical fluids for etching the edge region of the wafer. The upper chamber includes a raised portion for abutting against the outer end of the edge of the wafer and aligning the central axis of the wafer with the central axis of the second support area. The present invention can achieve the treatment of the outer edge of a semiconductor wafer.

Description

Technical Field

[0001] The present invention relates to the field of surface treatment of semiconductor wafers or similar workpieces, and particularly to a semiconductor processing apparatus, a semiconductor processing system, and a semiconductor edge processing method.

Background Art

[0002] In the semiconductor manufacturing process, semiconductor wafers need to go through many processes to meet the high standards in the semiconductor industry. In advanced semiconductor wafer manufacturing processes, the edges of the wafers are required to be uniform, flat, undamaged, and smooth. The high requirement for uniform and precise etching of the wafer edge surface poses a great challenge to semiconductor wafer processes.

[0003] Figure 1a FIG. 12 is a top view of the structure of a semiconductor wafer 100. The semiconductor wafer 100 includes a substrate layer 101 and a thin film layer 102 deposited on the substrate layer 101. Figure 1b FIG. 13 is a Figure 1a cross-sectional view taken along line A-A of FIG. 12. The measurement points 1-8 are positions for measuring relevant data during the operation of the semiconductor wafer. As Figure 1b shown, the etching width is the difference in radius between the substrate layer 101 and the thin film layer 102. The etching width should be substantially the same at each of the measurement points 1-8. The smaller the difference between the maximum etching width and the minimum etching width, the higher the uniformity. For example, when the edge width is designed to be 0.7 mm, many advanced manufacturing processes require that the difference between the maximum etching width and the minimum etching width should not be greater than 0.1 mm; otherwise, non-uniform etching width will occur. If the difference between the maximum etching width and the minimum etching width exceeds 0.1 mm, it will directly affect the effect of subsequent processing operations, ultimately resulting in poor performance of integrated circuit chips and affecting the chip manufacturing yield.

[0004] The semiconductor wafer wet processing process has the advantages of simple principle, flexible process and low cost. There are several traditional methods for wet etching the edge of the semiconductor wafer surface. For example, the method of polishing the edge area of ​​the semiconductor wafer is to rotate the semiconductor wafer and remove a thin film layer from the substrate layer by combining physical friction and chemical etching. Since the retained thin film layer and the substrate layer are easily damaged, the polishing method is mainly used in the manufacture of semiconductor wafers with low precision requirements. Edge damage may cause the edge of the wafer to slip during thermal processing, eventually resulting in the scrapping of the wafer. Another commonly used method is to use vacuum adsorption of semiconductor wafers. The vacuum adsorption method uses a vacuum suction head to suck the wafer. The function of the vacuum suction head is to suck the wafer to protect the part of the thin film that needs to be retained in the vacuum suction head, and expose the part of the thin film that needs to be removed outside the vacuum suction head. Then the vacuum suction head and the wafer are immersed in a chemical etching solution to etch away the part of the film exposed outside the vacuum suction head. However, the vacuum adsorption method results in uneven thin layer removal and uneven etching width. Another common method is the film method, which uses pure anti-corrosion PTFE, PE and other plastic films to protect the part of the film that needs to be retained, and then exposes the whole film to a chemical corrosive gas environment or immerses it in a chemical corrosive liquid to corrode the exposed part. The film method often causes uneven corrosion width because the center of the pre-cut film may not be aligned with the center of the wafer substrate; and there are many process steps, which require the use of a variety of equipment to complete, including film, wet etching, cleaning and film removal equipment. There is also a new spray method, whose working principle is to use a special nozzle to accurately spray the corrosive fluid to the area on the edge of the rotating wafer that needs to be corroded, so as to achieve accurate, uniform, flat and damage-free corrosion. Although the spray method can achieve a higher corrosion effect, it has extremely high requirements on the design of the equipment and the processing accuracy of the components, the equipment cost is very high, the process conditions are also more stringent, and the process cost is high.

[0005] In view of this, it is necessary to develop a new type of semiconductor wafer edge processing device that can solve the above problems. [Summary of the invention]

[0006] The purpose of the present invention is to provide a new semiconductor processing device, a semiconductor processing system and a semiconductor edge processing method, which can solve the problems existing in the prior art and achieve targeted processing of the outer edge of the semiconductor wafer.

[0007] An embodiment of the present invention relates to a device having a first channel providing a first space for one or more chemical fluids for etching a wafer edge region and a device having a protruding portion for aligning the central axis of the wafer with the central axis of the device by abutting against the outer end of the wafer edge.

[0008] An embodiment of the present invention also relates to a system including a wafer edge processing device and a material storage device.

[0009] Embodiments of the present invention also relate to a method, including forming a first channel in the edge region of a wafer to provide a space for one or more chemical fluids to flow and using a raised portion to touch the outer end of the wafer edge to align the center of the wafer with the center of the support area.

[0010] Embodiments of the present invention can be used in processing operations including semiconductor wafers, such that the edge surface is etched uniformly and precisely.

[0011] Compared with existing solutions, embodiments of the present invention can provide multiple advantages. The method can improve the accuracy and uniformity of wafer edge etching by using a raised portion, and can obtain a flat surface of the wafer substrate layer by scientifically selecting the chemical fluid composition for etching, controlling the flow rate of the chemical fluid, and the time of contact with the wafer edge, facilitating subsequent process operations of the wafer. At the same time, it can save the cost of processing operations. It can selectively process the wafer edge surface, especially for precise control of the wafer edge etching area.

[0012] Therefore, the present invention includes but is not limited to the following embodiments.

[0013] Some embodiments provide an apparatus, having a lower chamber with a first support area for supporting a wafer; an upper chamber with a second support area, wherein the upper chamber is closed with the lower chamber, and the wafer is placed between the first support area and the second support area; a first channel is formed in the edge region of the first support area or the second support area, and the first channel provides a first space for one or more chemical fluids for etching the wafer edge region to flow; the upper chamber includes a raised portion for abutting against the edge of the wafer and aligning the central axis of the wafer with the central axis of the second support area

[0014] In some embodiments of the apparatus or any combination of the foregoing embodiments, the raised portion is adjacent to the second support area and extends towards the lower chamber, the central axis of the wafer is perpendicular to the upper surface of the wafer, the central axis of the second support area is perpendicular to the lower surface of the upper chamber, and the upper surface of the wafer is parallel to the lower surface of the second support area.

[0015] In some embodiments of the apparatus or any combination of the foregoing embodiments, the raised portion includes a closed-loop portion disposed around the outer end of the wafer edge, and the raised portion uniformly abuts against the outer end region of the wafer edge, so that the central axis of the wafer overlaps with the central axis of the second support area.

[0016] In some embodiments of the apparatus or any combination of the foregoing embodiments, the raised portion includes a plurality of protrusions, which are arranged in a ring uniformly around the outer end of the wafer edge for uniformly abutting against the outer end region of the wafer edge.

[0017] In some embodiments of the device or any combination of the foregoing embodiments, the raised portion includes an inner surface that is inclined at an angle with respect to the central axis of the second support region, and this inner surface is used to abut against the outer edge region of the wafer.

[0018] In some embodiments of the device or any combination of the foregoing embodiments, the raised portion includes a corner facing the central axis of the second support region, and this corner is used to abut against the outer edge region of the wafer.

[0019] In some embodiments of the device or any combination of the foregoing embodiments, the first channel is located in the edge region of the lower chamber and provides a first channel space for one or more chemical fluids to flow, while forming an aisle between the upper chamber and the lower chamber, and this aisle connects the first space and the first channel space, so that one or more chemical fluids flow from the first space into the first channel space through this aisle.

[0020] In some embodiments of the device or any combination of the foregoing embodiments, the second channel is formed in the edge region of the upper chamber and is located above the first channel.

[0021] In some embodiments of the device or any combination of the foregoing embodiments, an elastic member is provided between the first channel and the second channel, and this elastic member is used to block one or more chemical fluids from flowing from the first space to the first channel space.

[0022] In some embodiments of the device or any combination of the foregoing embodiments, the elastic member is an O-ring.

[0023] In some embodiments of the device or any combination of the foregoing embodiments, the edge region of the second support region forms a first channel, providing a first space for one or more chemical fluids to flow; and one or more chemical fluids are circulated between the first space and the outside of the device through a first through-hole located in the upper chamber.

[0024] In some embodiments of the device or any combination of the foregoing embodiments, the edge region of the first support region forms a second channel, providing a second space for one or more chemical fluids for etching the edge region of the wafer to flow through.

[0025] In some embodiments of the device or any combination of the foregoing embodiments, one or more chemical fluids flow between the second space and the outside of the device through a second through-hole located in the lower chamber.

[0026] In some embodiments of the device or any combination of the foregoing embodiments, the first channel is formed by the edge region of the first support region and provides a first through-hole for one or more chemical fluids to circulate between the first space and the outside of the device.

[0027] An embodiment provides a system that includes a processing device and a material storage device connected to the processing device. The device includes a lower chamber having a first support area for supporting a wafer, an upper chamber having a second support area, and a first channel formed by an edge area of the first support area or the second support area. When the upper chamber and the lower chamber are closed, the wafer is fixed between the first support area and the second support area. The edge area of the first support area or the second support area forms the first channel, and the first channel provides a first space for the circulation of one or more chemical fluids for etching the edge area of the wafer. The upper chamber includes a raised portion for abutting against the outer edge of the wafer and aligning the central axis of the wafer with the central axis of the second support area. The material storage device is used to store one or more chemical fluids and provide or collect one or more chemical fluids from the processing device.

[0028] An embodiment provides a method that includes: placing a wafer on the first support area of the lower chamber of the semiconductor processing device; closing the upper chamber and the lower chamber of the device, and using the raised portion to abut against the edge of the wafer and align the central axis of the wafer with the central axis of the second support area; fixing the wafer between the first support area and the second support area; forming a first channel in the edge area of the first support area or the second support area, and the first channel provides a first space; injecting one or more chemical fluids into the first space to etch the edge area of the wafer.

[0029] The features, aspects, and advantages of the present invention will become apparent from the following detailed description and the accompanying drawings. The present invention includes any combination of one or more features or elements, regardless of whether these combinations of features or elements are explicitly described or otherwise in the embodiments. The present invention is intended to be read as a whole, such that any separable feature or element of the present invention, in any aspect and embodiment, should be considered combinable, unless the context of the present invention clearly provides otherwise.

[0030] Therefore, it should be understood that the purpose of providing this summary is only to summarize some embodiments in order to provide a basic understanding of some aspects of the present invention. Therefore, the above embodiments are only examples and should not be construed as narrowing the scope or concept of the present invention in any way. The features, appearances, and advantages of each embodiment will become apparent from the following detailed description and the accompanying drawings, which show the principles of some embodiments by way of example.

Description of the Drawings

[0031] In combination with the accompanying drawings and the following detailed description, the present invention will be more easily understood, where the same reference numerals correspond to the same structural components, and:

[0032] Figure 1a It is a top view of the structure of a semiconductor wafer.

[0033] Figure 1b isFigure 1a Cross-sectional view taken along A-A

[0034] Figure 2a Schematic cross-sectional view of the semiconductor processing apparatus 200 according to the present invention in an embodiment

[0035] Figure 2b is Figure 2a An enlarged schematic view of the circle A in

[0036] Figure 2c is Figure 2b An enlarged schematic view of the circle B in

[0037] Figure 2d is Figure 2c An enlarged schematic view of the circle C in

[0038] Figure 2e is Figure 2a Bottom view of the upper chamber 220 of the semiconductor processing apparatus 200

[0039] Figure 2f is Figure 2a Top view of the lower chamber 210 of the semiconductor processing apparatus 200

[0040] Figure 3a Schematic cross-sectional view of the semiconductor processing apparatus 300 according to the present invention in an embodiment

[0041] Figure 3b is Figure 3a An enlarged schematic view of the circle D in

[0042] Figure 3c is Figure 3a An enlarged schematic view of the circle D with the protrusion 342 shown in

[0043] Figure 3d is Figure 3a Bottom view of the upper chamber 320 of the semiconductor processing apparatus 300

[0044] Figure 3e is Figure 3a Top view of the lower chamber 320 of the semiconductor processing apparatus 300

[0045] Figure 4a Schematic cross-sectional view of the semiconductor processing apparatus 400 according to the present invention in an embodiment

[0046] Figure 4b is Figure 4a An enlarged schematic view of the circle E in

[0047] Figure 4c is Figure 4b An enlarged schematic view of the circle F in

[0048] Figure 4d is Figure 4a A top view of the lower chamber 420 of the semiconductor processing apparatus 400.

[0049] Figure 4e is Figure 4a A bottom view of the upper chamber 410 of the semiconductor processing apparatus 400.

[0050] Figure 5 An exemplary system 500 in the present invention includes a semiconductor processing apparatus and a material storage apparatus.

[0051] Figure 6 An exemplary method for using an apparatus to process an edge region of a semiconductor wafer in an embodiment of the present invention.

Specific Embodiments

[0052] Some embodiments of the present invention will be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all, embodiments are listed. In fact, the various embodiments of the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. For example, unless otherwise specified, referring to something as first, second, etc. should not be construed as implying a particular order. In addition, something may be described as above something (unless otherwise specified) while actually being below something, and vice versa; similarly, something described as on the left may be on the right, and vice versa. The same reference numeral always represents the same element.

[0053] Figures 1a to 1b A schematic structural diagram of a semiconductor wafer 100. Figure 1a A top view of the structure of the semiconductor wafer 100. Figure 1b is Figure 1a A cross-sectional view of the A-A section of. As Figures 1a-1b shown, the semiconductor wafer 100 includes a substrate layer 101 and a thin film layer 102 deposited on the upper surface of the substrate layer 101, and the substrate layer 101 may be partially covered by the thin film layer 102. In another embodiment, the substrate layer 101 may be completely covered by the thin film layer 102. In another embodiment, both sides of the surface of the substrate layer 101 may be covered by the thin film layer 102 respectively.

[0054] In this embodiment, by processing the semiconductor wafer, the thin film layer 102 should be removed from the substrate layer 101. As Figures 1a-1b shown, the radius of the thin film layer 102 is smaller than that of the substrate layer 101, and the etching width refers to the difference between the two radii. Figure 1aThe measurement points 1-8 therein are the test positions for measuring relevant data of the semiconductor wafer. The corrosion width should be substantially the same at the measurement points 1-8. The smaller the difference between the maximum value and the minimum value, the better the corrosion uniformity. For example, when the edge width is designed to be 0.7 mm, the advanced process requires that the difference between the maximum corrosion width and the minimum corrosion width shall not be greater than 0.1 mm. In some embodiments, the thin layers covering both sides of the surface of the substrate layer 101 should be partially or completely removed. The corrosion width on each side of the surface of the substrate layer 101 can be the same or different.

[0055] Reference Figures 2a to 2f , this embodiment shows a schematic structural diagram of a semiconductor processing apparatus 200. Figure 2a It is a schematic cross-sectional view of the semiconductor processing apparatus 200. Figure 2b Is Figure 2a An enlarged schematic view of the circle A in Figure 2c Is Figure 2b (Through holes omitted) An enlarged schematic view of the circle B in Figure 2d Is Figure 2c An enlarged schematic view of the circle C in Figure 2e Is Figure 2a A bottom view of the upper chamber 220 of the semiconductor processing apparatus 200. Figure 2f Is Figure 2a A top view of the lower chamber 210 of the semiconductor processing apparatus 200.

[0056] In an embodiment, as shown in FIGS. 1 and 2, the semiconductor device 200 includes a lower chamber 210 having a first support region 212. The first support region 212 can support the wafer 100. As Figure 2a shown, the first support region 212 has an upper surface facing the wafer 100. The wafer 100 can be placed on the upper surface of the first support region 212. In some embodiments, the apparatus 200 includes an upper chamber 220 having a second support region 222. As Figure 2a shown, the second support region 222 has a lower surface facing the wafer 100. The upper chamber 220 is closed with the lower chamber 210, and the wafer 100 is placed between the first support region 212 and the second support region 222. Taking the lower chamber as the origin, the upper chamber 220 can move between two relative positions. In the first position, the wafer 100 can be loaded and / or unloaded onto the first support region 212. As Figure 2a shown, in the second position, the upper chamber 220 and the lower chamber 210 are closed, so that the wafer 100 is fixed by the upper surface of the first support region 212 and the lower surface of the second support region 222 and is processed.

[0057] In some embodiments or any combination of the foregoing embodiments, reference Figures 2a to 2c, the apparatus 200 includes a first channel 230 formed by an edge region of the first support region 212 or the second support region 222. The first channel 230 provides a first space 232 for one or more chemical fluids to etch an edge region of the wafer 100. Refer to Figures 2a to 2c , the first channel 230 is formed by an edge region of the second support region 222 in the upper chamber 220. The first channel 230 is formed on the lower surface of the upper chamber 220, and one side of the first channel 230 is open facing the wafer 100. In this embodiment, the first channel 230 provides the first space 232 such that one or more chemical fluids flow therein to etch the edge region of the wafer 100. Refer to Figures 2a to 2c , the first space 232 may be formed by the first channel 230 and the inner surface of the wafer 100. In this embodiment, the first channel 230 is annular and surrounds the edge region of the wafer 100. The entire edge region of the wafer 100 is received in the first space 232. In another embodiment, the first channel 230 may be designed as an arc less than 360 degrees, and the edge region of the wafer 100 may be accommodated in a specific region of the first space 232. Then, one or more chemical fluids may etch the wafer edge region along the arc of the first channel 230.

[0058] In some embodiments of the apparatus 200 or any combination of the foregoing embodiments, refer to Figures 2a to 2c , the upper chamber 220 includes a raised portion 240 that abuts against the edge of the wafer 100. The raised portion may directly contact and abut against the edge of the wafer 100. Refer to Figure 2a , the central axis X-X of the wafer 100 is perpendicular to the upper surface of the wafer 100. The central axis X'-X' of the second support region 222 is perpendicular to the lower surface of the second support region 222. The raised portion 240 aligns the central axis X-X of the wafer 100 with the central axis X'-X' of the second support region 222. When the upper chamber 220 is in the first position, the wafer 100 is loaded onto the first support region 212. The central axis X-X of the wafer 100 may not be aligned with the central axis X'-X' of the second support region 222. During the movement of the upper chamber 220 from the first position to the second position, the raised portion 240 contacts the edge of the wafer 100, then abuts against the edge of the wafer 100, and pushes the wafer 100 to move on the upper surface of the first support region 212. When the upper chamber 220 is in the second position, the wafer is fixed on the upper surface of the first support region 212, and the central axis X-X of the wafer 100 is parallel to the central axis X'-X' of the second support region 222. Or the central axis X-X of the wafer 100 may overlap with the central axis X'-X' of the second support region 222.

[0059] In some embodiments of the apparatus 200 or any combination of the foregoing embodiments, the raised portion 240 is adjacent to the second support region 222 and extends downward into the lower chamber 210. Refer toFigure 2a and 2b The raised portion 240 is connected to the second support area 222. When the upper chamber 220 is in the second position, the raised portion 240 extends into the lower chamber 210. As Figure 2a and 2b shown, in this embodiment, the raised portion 240 is located beside the first channel 230. Referring to Figure 2a , the central axis X-X of the wafer 100 is perpendicular to the upper surface of the wafer 100 and the central axis X'-X' of the second support area 222 is perpendicular to the lower surface of the upper chamber 220. The upper surface of the wafer 100 is parallel to the lower surface of the second support area 222. In one embodiment, when the upper chamber 220 is in the second position, a part of the upper surface of the wafer 100 overlaps with the lower surface of the second support area 222, and the central axis X-X of the wafer 100 overlaps with the central axis X'-X' of the second support area 222.

[0060] In some embodiments of the device 200 or any combination of the foregoing embodiments, the raised portion 240 can be designed to form a closed loop around the wafer 100. Referring to Figure 2a , the raised portion 240 includes a closed loop. The closed loop can surround the entire edge region of the wafer 100. Thus, the raised portion 240 can completely abut against the edge region of the wafer 100, causing the central axis X-X of the wafer 100 to overlap with the central axis X'-X' of the second support area 222. In certain embodiments, the closed loop can be an arc with an angle less than 360 degrees, and a specific portion abuts against the edge region of the wafer 100, causing the central axis X-X of the wafer 100 to be aligned and / or overlapped with the central axis X'-X' of the second support area 222 through the raised portion 240. In certain embodiments, the raised portion 240 may be an open loop.

[0061] In some embodiments of the device 200 or any combination of the foregoing embodiments, the raised portion 240 includes an inner angle facing the central axis X'-X' of the second support area 222. Referring to Figure 2c , the raised portion 240 includes an inner surface 242 inclined at an angle α with respect to the first reference direction Y-Y. The first reference direction Y-Y is parallel to the lower surface of the second support area 222. The range of the angle α is within 20° - 90°. As Figure 2b and 2c shown, the inner angle is formed at the connection of the inner surface 242 and the inner surface of the first channel 230, and faces the central axis X'-X' of the second support area 222. In certain embodiments, the inner angle abuts against the edge region of the wafer 100. As Figure 2bAs shown, during the movement of the upper chamber 220 from the first position to the second position, the inner angle of the convex portion 240 contacts the edge region of the wafer 100 and then abuts against the edge of the wafer 100 to push the wafer 100. When the upper chamber 220 is in the second position, the wafer is fixed and the central axis X-X of the wafer 100 is parallel to the central axis X'-X' of the second support region 222. Alternatively, the central axis X-X of the wafer 100 overlaps with the central axis X'-X' of the second support region 222.

[0062] In some embodiments of the apparatus 200 or any combination of the foregoing embodiments, the first channel 250 is formed by the edge region 214 of the lower chamber 210, and the first channel 250 provides a first channel space 252 for the flow of one or more chemical fluids. Referring to Figure 2a , 2b and 2f, the first channel 250 is formed by the edge region 214 of the lower chamber 210 and is adjacent to the first support region 212 of the lower chamber 210. The first channel 250 forms a first channel space 252, and one or more chemical fluids can flow from the first space 232 of the first channel 230 to the first channel space 252.

[0063] In some embodiments of the apparatus 200 or any combination of the foregoing embodiments, the aisle 260 is located between the upper chamber 220 and the lower chamber 210. Referring to Figure 2b and 2f , the lower chamber 210 has a first upper surface 262 between the first support region 212 and the first channel 250. The aisle 260 is located between the first upper surface 262 of the lower chamber 210 and the inner surface 242 of the convex portion 240. The aisle 260 connects the first space 232 with the first channel space 252 such that one or more chemical fluids flow from the first space 232 to the first channel space 252 through the aisle 260. In one embodiment, the aisle 260 can be blocked by the convex portion 240 to prevent one or more chemical fluids from flowing from the first space 232 to the first channel space 252. In another embodiment, the aisle 260 is blocked by the first support region 210 to prevent one or more chemical fluids from flowing from the first space 232 to the first channel space 252.

[0064] In some embodiments of the apparatus 200 or any combination of the foregoing embodiments, as Figures 2a to 2cAs shown, the first channel 230 is located at the edge region of the second support region 222. The upper chamber 220 includes a first through hole 270, and one or more chemical fluids flow between the first space 232 and the outside of the device 200 through the first through hole 270. The first through hole 270 can communicate with the first space 232 through the upper chamber 220 from the outside of the device 200. In one embodiment, one or more chemical fluids can flow between the first space 232 and the outside of the device 200 through the first through hole 270. In another embodiment, the upper chamber 220 may include two or more through holes substantially the same as the first through hole 270 (such as Figure 2a and 2e shown secondary first through hole 272). In this embodiment, at least one first through hole (such as the first through hole 270) can be used as an inlet and the remaining first through holes (such as the secondary first through hole 272) can be used as outlets. The first space 232 can be connected to the outside through the first through hole 270 and the secondary first through hole 272. In this embodiment, one or more chemical fluids can flow from the outside of the device 200 into the first space 232 of the first channel 230 through the first through hole 270 and flow out of the first space 232 to the outside of the device 200 through the secondary first through hole 272.

[0065] In some embodiments of the device 200 or any combination of the foregoing embodiments, the second channel 280 is formed by the edge region of the first support region 212 and provides a second space 282 for etching the edge region of the wafer 100 using one or more chemical fluids. Refer to Figures 2a to 2c , the second channel 280 is formed by the edge region of the first support region 212 in the lower chamber 210. Refer to Figures 2a to 2c , the second channel 280 is located on the upper surface of the lower chamber 210, and one side opening of the second channel 280 faces the wafer. In this embodiment, the second channel 280 provides a first space 232 for etching the edge region of the wafer 100 using one or more chemical fluids. Refer to Figures 2a to 2c, the second space can be formed by the inner surface of the second channel 280 and the wafer 100. In one embodiment, the second channel 280 is annular and surrounds the edge region of the wafer 100. In another embodiment, the second channel 280 can be designed as an arc with an angle less than 360 degrees, and the edge region of the wafer 100 is exposed at a specific position in the second space 282. Then, one or more chemical fluids are used to etch a specific edge region of the wafer along the arc of the second channel 280. In some embodiments, the second channel 280 is designed to have the same shape as the first channel 230. The second channel 280 is located between the first support region 212 and the first channel 250 near the first upper surface 262. The aisle 260 is located between the first upper surface 262 of the lower chamber 210 and the inner surface 242 of the upper chamber. The aisle 260 is used for one or more chemical fluids to flow from the second space 282 to the first channel space 252 through the aisle 260. In one embodiment, the aisle 260 can be blocked by the raised portion 240 to prevent one or more chemical fluids from flowing from the second space 282 into the first channel space 252. In another embodiment, the channel 260 can be blocked by the first support region 210 to prevent one or more chemical fluids from flowing from the second space 282 to the first channel space 252.

[0066] In some embodiments of the device 200 or any combination of the foregoing embodiments, there is a second through hole 290 in the lower chamber 210 for one or more chemical fluids to flow between the second space 282 and the outside of the device 200. Referring to Figure 2a and 2b , the second through hole 290 can communicate with the second space 282 of the second channel 280 by passing through the lower chamber 210 from the outside of the device 200. In one embodiment, one or more chemical fluids can flow between the second space 282 and the outside of the device 200 via the second through hole 290. In another embodiment, one or more chemical fluids can flow from the outside of the device 200 to the second space 282 of the second channel 280 via the second through hole 290, and then flow from the second space 282 of the second channel 280 to the first channel space 252 of the first channel 250 via the aisle 260. In some embodiments, the lower chamber 210 may further include one or more second through holes that are substantially the same as the second through hole 290 (such as Figure 2aThe secondary second through-hole (e.g., the second through-hole 292) shown. In one embodiment, at least one second through-hole (e.g., the second through-hole 290) is used as an inlet, and the remaining second through-holes (e.g., the secondary second through-hole 292) are used as outlets. The second space 282 is connected to the outside of the device 200 through the second through-hole 290 and the secondary second through-hole 292. In one embodiment, one or more chemical fluids can flow into the second space 282 of the second channel 280 from the outside of the device 200 via the second through-hole 290 and flow out of the device 200 via the secondary second through-hole 292. In another embodiment, one or more chemical fluids can flow into the second space 282 of the second channel 280 from the outside of the device 200 via the second through-hole 290 and the second through-hole 292, and then flow into the first channel space 252 of the first channel 250 from the second space 282 of the second channel 280 via the aisle 260.

[0067] Reference Figures 3a to 3e , which shows a schematic structural diagram of a semiconductor processing apparatus 300 provided by an embodiment of the present invention. Among them, Figure 3a is a schematic cross-sectional view of the semiconductor processing apparatus 300 in the embodiment of the present invention. Figure 3b is Figure 3a an enlarged schematic view of the circle D in Figure 3c is Figure 3a an enlarged schematic view of the circle D with the protruding portion 342 shown in Figure 3d is Figure 3a a bottom view of the upper chamber 320 of the semiconductor processing apparatus 300. Figure 3e is Figure 3a a top view of the lower chamber 320 of the semiconductor processing apparatus 300.

[0068] In this embodiment, reference Figures 3a to 3e , the device 300 includes a lower chamber 310 having a first support area 312. The lower chamber 310 and the first support area 312 can be respectively referred to Figures 2a to 2f the lower chamber 210 and the first support area 212 shown. The device 300 includes an upper chamber 320 having a second support area 322. The upper chamber 320 and the second support area 322 can be respectively referred to the upper chamber 220 and the second support area 222 shown above Figures 2a to 2f . As described above, the upper chamber 320 is closed with the lower chamber 310 to fix the wafer 100 between the first support area 312 and the second support area 322. The device 300 includes a first channel 330 formed by the edge area of the first support area 312 or the second support area 322. The first channel 330 can be referred to the above Figures 2a to 2fThe first channel 230 described above. The first channel 330 is formed by the edge region of the second support region 322 in the upper chamber 320 and provides a first space 332 for the flow of one or more chemical fluids for etching the edge region of the wafer 100. The first space 332 may refer to the first space 232 described above Figures 2a to 2f In some embodiments, the first space 332 of the first channel 330 may also be formed by the inner surface of the first channel 330, the lower chamber 310, and the wafer 100. The entire or partial edge region of the wafer 100 is exposed in the first space 332 of the first channel 330 and is contacted and etched by one or more chemical fluids

[0069] In some embodiments of the device 300 or any combination of the foregoing embodiments, as Figures 3a to 3d shown, the upper chamber 320 includes a raised portion 340 for abutting against the edge of the wafer 100 and aligning the central axis X-X of the wafer 100 with the central axis X'-X' of the second support region 322. The raised portion 340 may refer to the raised portion 240 described above Figures 2a to 2e In some embodiments, the raised portion 340 includes a plurality of bumps 342 that uniformly surround and abut against the edge region of the wafer 100. Each bump 342 extends from the raised portion 340 into the first space 332 of the first channel 330. Referring to Figure 3c and 3d , the raised portion 340 includes four bumps (such as bumps 342a to 342d). Each bump 342 includes an inner surface 344 that is inclined at an angle β with respect to the reference direction Y-Y. The range of the angle β is within 20°-90°. The inner surface faces the edge of the wafer 100. The reference direction Y-Y is parallel to the upper surface of the wafer 100 or perpendicular to the central axis X'-X' of the second support region 322. For example, in Figure 3c the bump 342a includes an inner surface 344a that is inclined at an angle β with respect to the reference direction Y-Y. The inner surface 344a may abut against the edge of the wafer 100 and push the wafer 100 to align the central axis X-X of the wafer 100 with the central axis X'-X' of the second support region 322. The raised portion 340 includes a plurality of bumps 342. In some embodiments, the raised portion 340 may include six bumps 342. In some embodiments, the raised portion 340 may include eight bumps 342. In some embodiments, the raised portion 340 may include twelve bumps 342.

[0070] In some embodiments of the device 300 or any combination of the foregoing embodiments, referring to Figures 3a to 3c, a first channel 350 is formed at an edge region 314 of the lower chamber 310 and provides a first channel space 352 for flowing one or more chemical fluids. The first channel 350, the edge region 314 of the lower chamber 310, and the first channel space 352 of the first channel 350 may respectively refer to the first channel 250, the edge region 214 of the lower chamber 220, and the first channel space 252 of the first channel 250 described in the foregoing text Figures 2a to 2f In some embodiments, a passage 360 is formed between the upper chamber 320 and the lower chamber 310 to connect the first space 332 with the first channel space 352, and one or more chemical fluids flow from the first space 332 to the first channel space 352 through the passage 360. The passage 360 may refer to the passage 260 described above Figures 2a to 2f In some embodiments, the passage 360 is formed between the raised portion 340 and the first upper surface 362 of the lower chamber 310. As Figures 3a to 3c shown in 3e, the first upper surface 362 is adjacent to the first support region 312 and is located between the first support region 312 and the first channel 350.

[0071] In some embodiments of the device 300 or any combination of the foregoing embodiments, as Figure 3a , 3b shown in 3d, the upper chamber 320 may include a first through hole 370 such that one or more chemical fluids flow between the first space 332 and the outside of the device 300. The first through hole 370 may refer to the first through hole 270 described above Figures 2a to 2e In some embodiments, the upper chamber 320 may further include one or more first through holes (such as the secondary first through holes 372 shown in Figure 3a and 3d ) that are substantially the same as the first through hole 370. The arrangement of the one or more first through holes may refer to the arrangement of the one or more first through holes described above Figure 2a and 2e .

[0072] In some embodiments of the device 300 or any combination of the foregoing embodiments, referring to Figure 3a , 3b and 3e, the lower chamber 310 includes a second through hole 380. As Figure 3a shown in 3bAs shown, the second through-hole 380 is used for one or more chemical fluids to flow between the first space 332 and the outside of the device 300. The second through-hole 380 penetrates through the lower chamber 310 from the outside of the device 300 and communicates with the first space 332 of the first channel 330. In some embodiments, one or more chemical fluids can flow from the outside of the device 300 to the first space 332 via the second through-hole 380, and then flow from the first space 332 to the first channel space 352 of the first channel 350 through the aisle 360. In some embodiments, one or more chemical fluids can flow from the outside of the device 300 to the first space 332 of the first channel 330 through the first through-hole 370, and then flow from the first space 332 to the first channel space 352 through the aisle 360 and flow to the outside of the device 300 through the second through-hole 380.

[0073] In some embodiments of the device 300 or any combination of the foregoing embodiments, the second channel 390 is formed by the edge region 324 of the upper chamber 320 and is located above the first channel 350. Referring to Figures 3a to 3d , the second channel 390 is formed by the edge region 324 of the upper chamber 320 and is close to the protruding portion 340. The second channel 390 provides a second channel space for the circulation of chemicals. The opening of the second channel 390 faces the lower chamber 310. The second channel 390 is located above the first channel 350 such that the first channel space 352 of the first channel 350 can communicate with the second channel space of the second channel 390. The second channel 390 has the same design as the first channel 350. Figure 3d and 3e As shown, the first channel 350 and the second channel 390 are annular. In addition, the first channel 350 and the second channel 390 can also be designed as arcs less than 360 degrees.

[0074] In some embodiments of the device 300 or any combination of the foregoing embodiments, as Figures 3a to 3c shown, the elastic member 392 can be placed between the first channel 350 and the second channel 390. In some embodiments, the elastic member 392 is placed in the first channel space 352 or the second channel space. In some embodiments, the elastic member 392 is placed in the first channel space 352 and the second channel space. In some embodiments, the elastic member 392 can be used to prevent one or more chemical fluids from flowing from the first space 332 to the first channel space 352. For example Figures 3a to 3c shown, the width of the elastic member 392 is wider than the widths of the first channel 350 and the second channel 390. The inner surface of the first channel 350 and / or the inner surface of the second channel 390 abuts against the elastic member 392 to prevent one or more chemical fluids from flowing from the first space 332 to the first channel space 352.

[0075] In some embodiments of apparatus 300 or any combination of the foregoing embodiments, the resilient member 392 can be an O-ring.

[0076] Reference Figures 4a to 4e , which shows a schematic structural view of a semiconductor processing apparatus 400 provided by an embodiment of the present invention. Figure 4b For Figure 4a an enlarged schematic view of the circle E in Figure 4c For Figure 4b an enlarged schematic view of the circle F in Figure 4d For Figure 4a a top view of the lower chamber 420 of the semiconductor processing apparatus 400. Figure 4e For Figure 4a a bottom view of the upper chamber 410 of the semiconductor processing apparatus 400.

[0077] In one embodiment, referring to Figures 4a to 4e , the apparatus 400 includes a lower chamber 410 having a first support region 412. The lower chamber 410 and the first support region 412 can be referred to Figures 2a to 2f the lower chamber 210 and the first support region 212 shown. The apparatus 400 includes an upper chamber 420 having a second support region 422. The upper chamber 420 and the second support region 422 can be respectively referred to the upper chamber 220 and the second support region 222 shown above Figures 2a to 2f . The apparatus 400 includes a first channel 430 formed by an edge region of the first support region 412. The first channel 430 can be referred to the first channel 230 described above Figures 2a to 2f . Referring to Figures 4a to 4c and 4e, the first channel 430 is formed at an edge region of the first support region 412 in the lower chamber 420 and provides a first space 432 for flowing one or more chemical fluids to etch an edge region of the wafer 100. The first space 432 of the first channel 430 can also be formed by the inner surface of the first channel 430 and the wafer 100. The entire or part of the edge region of the wafer 100 is received in the first space 432 of the first channel 430, and one or more chemical fluids can be used to contact and etch the edge region of the wafer 100.

[0078] In some embodiments of the apparatus 400 or any combination of the foregoing embodiments, as Figures 4a to 4d shown, the upper chamber 420 includes a raised portion 440 that abuts against the edge of the wafer 100 and aligns the central axis X-X of the wafer 100 with the central axis X'-X' of the second support region 422. The raised portion 440 can be referred to the above Figures 2a to 2eThe described raised portion 240. In some embodiments, the raised portion 440 faces the lower chamber 410 and is near the lower surface 424 of the second support region 422. In some embodiments, the raised portion 440 includes a plurality of bumps that are evenly distributed around the wafer 100 and abut against the edge region of the wafer 100. The bumps can be referred to the bumps 342 described above Figures 3a to 3d The described bumps 342.

[0079] In some embodiments of the device 400 or any combination of the foregoing embodiments, the raised portion 440 includes an inner surface 442 that is angularly inclined relative to the central axis X'-X' of the second support region 442, and the inner surface 442 abuts against the edge region of the wafer 100. Refer to Figures 4a to 4d , the inner surface 442 faces the wafer 100 and contacts the edge of the wafer 100. The inner surface 442 is inclined at an angle γ relative to the reference axis Z-Z. The range of the angle γ can be within 20°-90°. The reference axis Z-Z is parallel to the central axis X'-X' of the second support region 442. In some embodiments, the inner surface 442 of the raised portion 440 contacts the edge of the wafer 100 and abuts against the edge of the wafer 100 in the embodiment, so that the central axis X-X of the wafer 100 can be aligned with the central axis X'-X' of the second support region 422. In some embodiments, the inner surface 442 of the raised portion 440 can push the wafer 100 so that the central axis X-X of the wafer 100 overlaps with the central axis X'-X' of the second support region 422.

[0080] In some embodiments of the device 400 or any combination of the foregoing embodiments, refer to Figure 4a , 4c and 4e, the first channel 450 is formed by the edge region 414 of the lower chamber 410 and provides a first channel space 452 for the flow of one or more chemical fluids. The first channel 450, the edge region 414 of the lower chamber 410, and the first channel space 452 of the first channel 450 can be respectively referred to the first channel 250, the edge region 214 of the lower chamber 220, and the first channel space 252 of the first channel 250 described above. In some embodiments, the aisle 460 is located between the upper chamber 420 and the lower chamber 410 and connects the first space 432 with the first channel space 452 for one or more chemical fluids to flow from the first space 432 to the first channel space 452 through the aisle 460. The aisle 460 can be referred to the aisle 260 described above Figures 2a to 2f The described first channel 250, the edge region 214 of the lower chamber 220, and the first channel space 252 of the first channel 250. In some embodiments, the aisle 460 is located between the wafer 100 and the first upper surface 462 of the lower chamber 410. As Figures 2a to 2f The described aisle 260. In some embodiments, as Figure 4c shown, the aisle 460 is located between the wafer 100 and the first upper surface 462 of the lower chamber 410. As Figure 4c and 4e shown, the first upper surface 462 is located between the first channel 430 and the first channel 450.

[0081] In some embodiments of apparatus 400 or any combination of the foregoing embodiments, referring to Figures 4a to 4c and 4e, the lower chamber 420 includes a first through-hole 470 such that one or more chemical fluids flow between the first space 432 and the exterior of the apparatus 400. The first through-hole 470 may refer to the first through-hole 270 described above Figures 2a to 2e In some embodiments, the lower chamber 420 further includes one or more first through-holes that are substantially the same as the first through-hole 470 (such as Figure 4a and 4e the secondary first through-hole 472 shown). The arrangement of the one or more first through-holes may refer to Figure 2a and 2e described.

[0082] In some embodiments of apparatus 400 or any combination of the foregoing embodiments, referring to Figure 4a , 4b and 4e, the second channel 480 is located in the edge region of the first support region 412 and provides a second space 482 for etching the edge region of the wafer 100 using one or more chemical fluids. The second channel 480 may refer to the second channel 280 described in Figure 2b , 2c and 2f above. In some embodiments, the first channel 430 and the second channel 480 may be connected by an aisle 484 such that one or more chemical fluids flow between the first space 432 in the first channel 430 and the second space 482 in the second channel 480. Referring to Figure 4b and 4c , the aisle 484 connecting the first channel 430 and the second channel 480 is formed by the wafer 100 and the first support region 412 of the lower chamber 410. One or more chemical fluids may flow between the first space 432 and the second space 482 through the aisle 484. In some embodiments, one or more chemical fluids may flow from the second space 482 through the aisle 484, the first space 432, and the aisle 460 to the first channel space 452.

[0083] In some embodiments of apparatus 400 or any combination of the foregoing embodiments, referring to Figure 4a , 4b and 4e, the lower chamber 410 includes a second through-hole 490 such that one or more chemical fluids flow between the second space 482 and the exterior of the apparatus 400. The second through-hole 490 may refer to the second through-hole 290 described in Figures 2a-2c In some embodiments, the lower chamber 410 further includes one or more second through-holes that are substantially the same as the second through-hole 490 (such as Figure 4a and 4e the secondary second through-hole 492 shown). The arrangement of the one or more first through-holes may refer to the aboveFigure 2a Arrangement of one or more first through-holes described.

[0084] Figure 5 The example of system 500 in the present invention includes a semiconductor processing device 510 and a material storage device 520. Device 510 may refer to any one of devices 200, 300, and 400 described above Figures 2a-2f Figures 3a - 3e and 4a - 4e. Device 510 includes a lower chamber having a first support area for supporting a wafer and an upper chamber having a second support area; the upper chamber is closed with the lower chamber to fix the wafer between the first support area and the second support area; a first channel is located at the edge area of the first support area or the second support area, and the first channel provides a first space for etching the edge area of the wafer by one or more chemical fluids. In some embodiments, the upper chamber includes a protruding portion that abuts against the edge of the wafer to align the central axis of the wafer with the central axis of the second support area. The material storage device 520 is connected to the device 510 and is a device for storing one or more chemical fluids and transferring one or more chemical fluids between the device 510 and the material storage device 520. In some embodiments, the one or more chemical fluids may be selected from H3PO4, HF, HCl, HNO3, H2O2, or any combination thereof.

[0085] In some embodiments of system 500 or any combination of the foregoing embodiments, the protruding portion is adjacent to the second support area and extends downward toward the lower chamber. The central axis of the wafer is perpendicular to the upper surface of the wafer, the central axis of the second support area is perpendicular to the lower surface of the upper chamber, and the upper surface of the wafer is parallel to the lower surface of the second support area. In some embodiments, the protruding portion includes a closed loop around the wafer, and the protruding portion uniformly abuts against the edge area of the wafer to overlap the central axis of the wafer with the central axis of the second support area.

[0086] In some embodiments of system 500 or any combination of the foregoing embodiments, the protruding portion is adjacent to the second support area and extends downward toward the lower chamber. The central axis of the wafer is perpendicular to the upper surface of the wafer, the central axis of the second support area is perpendicular to the lower surface of the upper chamber, and the upper surface of the wafer is parallel to the lower surface of the second support area. In some embodiments, the protruding portion includes a plurality of bumps, which are annularly distributed around the wafer and are used to uniformly abut against the edge area of the wafer.

[0087] In some embodiments of system 500 or any combination of the foregoing embodiments, a first channel exists in the edge region of the lower chamber and a first channel space is provided for one or more chemical fluids to flow through. In some embodiments, a channel is formed between the upper chamber and the lower chamber to connect the first space with the first channel space, such that one or more chemical fluids flow from the first space to the first channel space through the channel. In some embodiments, a second channel exists in the edge region of the upper chamber and is located above the first channel. In some embodiments, an elastic member can be added between the first channel and the second channel to prevent one or more chemical fluids from flowing from the first space to the first channel space.

[0088] In some embodiments of system 500 or any combination of the foregoing embodiments, system 500 includes a control device 530. The control device 530 can complete the communication and control of device 510 and the material storage device 520. For example, the control device 530 can control the movement of the upper chamber between a first position for loading / unloading wafers and a second position for closing the upper chamber and the lower chamber to process wafers; it can control the flow rate and flow direction of one or more chemical fluids. The control device 530 can detect the flow rate, flow direction, status of one or more chemical fluids, and the faults of device 510. In some embodiments, the control device can include a PLC, a controller, sensors, storage devices (such as memories, hard disk drives, SSDs, etc.).

[0089] Figure 6 An exemplary method 600 for processing the edge region of a semiconductor wafer 100 by the device of the embodiments of the present invention. This method can employ Figures 2a-2f any one of the devices 200, 300, 400, or 500 described in 3a - 3e, 4a - 4e, and 5.

[0090] In an embodiment, as Figure 6 shown in step 602, device 200 (or device 300, device 400, or device 500) receives a wafer and places it on the first support area of the lower chamber. In step 604, the device closes its upper chamber and its lower chamber to fix the wafer between the first support area and the second support area of the upper chamber. In step 606, a first channel is formed in the edge region of the first support area or the second support area, and the first channel provides a first space. In step 608, the device uses the raised portion to abut against the edge of the wafer and aligns the central axis of the wafer with the central axis of the second support area. In step 610, the device injects one or more chemical fluids into the first space to etch the edge region of the wafer.

[0091] In some embodiments of method 600 or any combination of the foregoing embodiments, at step 602, the wafer is placed by a wafer transfer device onto a first support area of the lower chamber of apparatus 200 (or apparatus 300, apparatus 400, or apparatus 500). The upper surface of the first support area faces the wafer. The wafer transfer device may place the wafer on the upper surface of the first support area such that a portion of the lower surface of the wafer is covered by the upper surface of the first support area. In some embodiments, when the upper chamber of apparatus 200 (or apparatus 300, apparatus 400, or apparatus 500) is in a first position, the wafer may be loaded or unloaded onto the first support area. That is, the wafer may be transferred from the wafer transfer device to the upper surface of the first support area.

[0092] In some embodiments of method 600 or any combination of the foregoing embodiments, at step 604, apparatus 200 (or apparatus 300, apparatus 400, or apparatus 500) may close the upper chamber and the lower chamber to fix the wafer between the first support area of the upper chamber and the second support area. When the upper chamber is in a second position, the lower chamber may be closed with the upper chamber and the wafer is fixed between the lower chamber and the upper chamber to process the edge area of the wafer. The upper chamber includes a second support area facing the lower surface of the wafer. The upper chamber and the lower chamber are closed to place the wafer between the first support area and the second support area. At this time, the wafer may be fixed between the lower surface of the second support area and the upper surface of the first support area.

[0093] In some embodiments of method 600 or any combination of the foregoing embodiments, at step 606, a first channel is formed in the edge area of the first support area or the second support area. The first channel may also be formed on the lower surface of the upper chamber, and the opening of the first channel faces the wafer. In some embodiments, the first channel provides a first space for processing the edge area of the wafer. For example, one or more chemical fluids flow in the first channel and etch the edge area of the wafer. In some embodiments, the first channel may be designed as a closed loop. In some embodiments, the first channel may be designed as a circle. Apparatus 200 (or apparatus 300, apparatus 400, or apparatus 500) or the wafer transfer device places the entire or partial edge area of the wafer in the first space for processing. In some embodiments, the first channel may be designed as an arc with an angle less than 360 degrees. Apparatus 200 (or apparatus 300, apparatus 400, or apparatus 500) or the wafer transfer device places a partial edge area of the wafer in the first space for processing.

[0094] In some embodiments of method 600 or any combination of the foregoing embodiments, in step 608, the upper chamber or the lower chamber of device 200 (or device 300, 400, or 500) has a raised portion. The device can use the raised portion to abut against the edge of the wafer. During the movement of the upper chamber from the first position to the second position, the raised portion contacts the edge of the wafer. Then, the raised portion abuts against the edge of the wafer and pushes the wafer to move on the upper surface of the first support area of the lower chamber. When the upper chamber and the lower chamber are closed, the wafer is fixed on the upper surface of the first support area, and the central axis X-X of the wafer is parallel to the central axis X'-X' of the second support area. The distance between the central axis X-X of the wafer and the central axis X'-X' of the second support area can be in the range of 0 mm - 0.1 mm. In some embodiments, the raised portion can be adjacent to the second support area and extend towards the lower chamber. In one embodiment, the raised portion is adjacent to the first channel.

[0095] In some embodiments, the raised portion includes an inner angle facing the central axis X'-X' of the second support area. The inner angle is formed by the intersection of the inner surface of the raised portion and the inner surface of the first channel and faces the central axis X'-X' of the second support area. In one embodiment, the inner angle abuts against the edge area of the wafer. When the upper chamber moves from the first position to the second position, the inner angle of the raised portion contacts the edge of the wafer, then abuts against the edge of the wafer, and pushes the wafer. In other embodiments, the inner surface of the raised portion contacts the edge of the wafer, then abuts against the edge of the wafer, and pushes the wafer.

[0096] In some embodiments of method 600 or any combination of the foregoing embodiments, in step 610, device 200 (or device 300, device 400, or device 500) can inject one or more chemical fluids into the first space to etch the edge area of the wafer. The one or more chemical fluids flow around the edge of the wafer in the first space and etch the edge area of the wafer exposed to the first space. In some embodiments, the device includes a through hole connecting the first space to the outside of the device. The one or more chemical fluids can flow into the first space through the through hole. In some embodiments, the one or more chemical fluids can flow from the first space to the outside of the device through the through hole. In other embodiments, the device includes two through holes, each through hole connecting the first space to the outside of the device respectively. The two through holes are spaced apart. The one or more chemical fluids flow into the first space through one through hole and flow out of the device through the other through hole.

[0097] Certain embodiments can be regarded as computer program products, including instructions stored on a non-transitory machine-readable medium. These instructions can be used to program a general-purpose or special-purpose processor to perform the described operations. A machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer), such as software, a processing application. A machine-readable medium may include, but is not limited to, magnetic storage media (e.g., floppy disks), optical storage media (e.g., CD-ROMs), magneto-optical storage media, read-only memory (ROM), random access memory (RAM), erasable programmable memory (e.g., EPROM and EEPROM), flash memory, or other types of media suitable for storing electronic instructions. A machine-readable medium may be referred to as a non-transitory machine-readable medium.

[0098] The above description is intended to be illustrative and not restrictive. Although the invention has been described with reference to specific illustrative examples, it should be understood that the invention is not limited to the described embodiments. The scope of the invention should be determined with reference to the claims and the full scope of equivalents to which the claims are entitled.

[0099] As used herein, the term "an embodiment" or "embodiment" means that a particular feature, structure, or characteristic associated with the embodiment can be included in at least one implementation of the invention. The appearances of "in an embodiment" in various places in this specification are not necessarily all referring to the same embodiment, nor are they necessarily separate or alternative embodiments mutually exclusive of other embodiments. The terms "plurality" and "several" in the present invention mean two or more. The "and / or" in the present invention means "and" or "or". In addition, the terms "first", "second", "third", "fourth", etc. used herein are intended as labels for distinguishing different elements, and may not necessarily have an order meaning according to their numerical designations. Therefore, the terms used herein are for the purpose of describing a specific implementation only and are not intended to be limiting.

[0100] It should also be noted that in some alternative embodiments, the indicated functions / actions may not occur in the order indicated in the figures. For example, depending on the functions / actions involved, two consecutively shown figures may actually be executed substantially simultaneously or sometimes in the reverse order.

[0101] Although the method operations are described in a particular order, it should be understood that other operations may be performed between the described operations. The described operation process can be adjusted so that they occur at slightly different times, or the described operations can be distributed across the system. The system allows for the simultaneous processing of multiple unrelated programs.

[0102] Numerous modifications and other embodiments of the present invention will occur to those skilled in the art having the benefit of the relevant industry knowledge and some of the original data. Accordingly, it is to be understood that the invention is not limited to the specific embodiments disclosed, but also includes other embodiments that are modifications within the scope of the appended claims. Further, although the foregoing description and the related drawings describe the implementation of specific embodiments of elements, functions in combination, within the scope of the appended claims, alternative implementations of different combinations of elements, functions are also included. The appended claims also include combinations of elements, functions different from those explicitly described above. Although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.

Claims

1. A semiconductor processing apparatus, characterized in that: It includes: A lower chamber having a first support area for supporting a wafer; An upper chamber having a second support area, wherein when the upper chamber is closed with the lower chamber, the wafer is placed between the first support area and the second support area; An edge area of the second support area forms a first channel, and one or more chemical fluids flow between the first space and the outside of the device through a first through hole located in the upper chamber. An edge area of the first support area forms a second channel, providing a second space for flowing one or more chemical fluids for etching the edge area of the wafer. The lower chamber provides a second through hole to enable the flow of one or more chemical fluids between the second space in the lower chamber and the outside of the device; Wherein the upper chamber includes a raised portion for abutting against the outer end of the edge of the wafer and aligning the central axis of the wafer with the central axis of the second support area; Wherein a first channel is located in the edge area of the lower chamber and provides a first channel space for flowing one or more chemical fluids. Meanwhile, an aisle is formed between the upper chamber and the lower chamber, and this aisle connects the first space and the first channel space, so that one or more chemical fluids flow from the first space into the first channel space through this aisle.

2. The semiconductor processing apparatus according to claim 1, characterized in that, The raised portion of the upper chamber is adjacent to the second support area and extends downward toward the lower chamber. The central axis of the wafer is perpendicular to the upper surface of the wafer, the central axis of the second support area is perpendicular to the lower surface of the upper chamber, and the upper surface of the wafer is parallel to the lower surface of the second support area.

3. The semiconductor processing apparatus according to claim 1, characterized in that, The raised portion includes a curved portion designed in a circular shape around the outer end of the wafer, and the raised portion uniformly abuts against the outer end area of the edge of the wafer, making the central axis of the wafer overlap with the central axis of the second support area.

4. The semiconductor processing apparatus according to claim 1, characterized in that, The raised portion includes a plurality of protrusions, which are evenly distributed in a ring around the outer end of the wafer and are used to evenly abut against the outer end area of the edge of the wafer.

5. The semiconductor processing apparatus according to claim 2, characterized in that, The raised portion includes an inner surface inclined at an angle with respect to the central axis of the second support area, and this inner surface abuts against the outer end area of the edge of the wafer.

6. The semiconductor processing apparatus according to claim 2, characterized in that, The raised portion includes an inner angle facing the central axis of the second support area, and this inner angle abuts against the outer end area of the edge of the wafer.

7. The semiconductor processing apparatus according to claim 1, characterized in that, Wherein a second channel is formed in the edge area of the upper chamber and is located above the first channel.

8. The semiconductor processing apparatus according to claim 7, characterized in that, An elastic member is provided between the first channel and the second channel, and this elastic member is used to block the flow of one or more chemical fluids from the first space to the first channel space.

9. In the semiconductor processing apparatus according to claim 8, wherein the elastic member is an O-ring.

10. A semiconductor processing system, comprising: A semiconductor processing device includes: A lower chamber having a first support area for supporting a wafer; An upper chamber having a second support area, wherein when the upper chamber is closed with the lower chamber, the wafer can be fixed between the first support area and the second support area; An edge area of the second support area forms a first channel, and one or more chemical fluids flow between the first space and the outside of the device through a first through hole located in the upper chamber. An edge area of the first support area forms a second channel, providing a second space for flowing one or more chemical fluids for etching the edge area of the wafer. The lower chamber provides a second through hole to enable the flow of one or more chemical fluids between the second space in the lower chamber and the outside of the device; The upper chamber includes a raised portion for abutting against the edge of the wafer and aligning the central axis of the wafer with the central axis of the second support area; The first channel is located in the edge region of the lower chamber and provides a first channel space for flowing one or more chemical fluids. Meanwhile, an aisle is formed between the upper chamber and the lower chamber, and this aisle connects the first space and the first channel space, enabling one or more chemical fluids to flow from the first space into the first channel space through this aisle. A material storage device connected to the semiconductor processing device, which is used to store and exchange and transfer one or more chemical fluids with the semiconductor processing device.

11. In the semiconductor processing system according to claim 10, wherein: The raised portion is adjacent to the second support area and extends towards the lower chamber. The central axis of the wafer is perpendicular to the upper surface of the wafer, the central axis of the second support area is perpendicular to the lower surface of the upper chamber, the upper surface of the wafer is parallel to the lower surface of the second support area. The raised portion includes a closed-loop portion designed around the outer end of the wafer edge. The raised portion uniformly abuts against the outer end region of the wafer edge, making the central axis of the wafer overlap with the central axis of the second support area.

12. In the semiconductor processing system according to claim 10, wherein: The raised portion is adjacent to the second support area and extends towards the lower chamber. The central axis of the wafer is perpendicular to the upper surface of the wafer, the central axis of the second support area is perpendicular to the lower surface of the upper chamber, the upper surface of the wafer is parallel to the lower surface of the second support area; the raised portion includes a plurality of bumps, which are evenly distributed in a ring around the outer end of the wafer edge and are used to uniformly abut against the outer end region of the wafer edge.

13. In the semiconductor processing system according to claim 10, wherein: The second channel is formed in the edge region of the upper chamber and is located above the first channel. An elastic member is designed and placed between the first channel and the second channel, and this elastic member is used to block one or more chemical fluids from flowing from the first space into the first channel space.

14. A semiconductor edge processing method, comprising: Place the wafer on the first support area of the lower chamber of the semiconductor processing device; Close the upper chamber and the lower chamber of the semiconductor processing device to fix the wafer between the first support area and the second support area; The edge region of the second support area forms a first channel, and the first channel provides a first space. The edge region of the first support area forms a second channel, and the second channel provides a second space. The first channel is located in the edge region of the lower chamber and provides a first channel space. Meanwhile, an aisle is formed between the upper chamber and the lower chamber, and this aisle connects the first space and the first channel space; Use the raised portion to abut against the edge of the wafer and align the central axis of the wafer with the central axis of the second support area; and Enable one or more chemical fluids to flow between the first space and the outside of the device through the first through-hole located in the upper chamber, enable one or more chemical fluids to flow from the first space into the first channel space through this aisle, inject one or more chemical fluids into the second space to etch the edge region of the wafer, and the lower chamber provides a second through-hole to achieve the flow of one or more chemical fluids between the second space in the lower chamber and the outside of the device.

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