Electrostatic chuck heater and manufacturing method thereof

Abstract

The present invention relates to an electrostatic chuck heater with a bipolar structure, comprising: a heater body having an internal electrode and an external electrode that selectively perform either an RF grounding function or an electrostatic chuck function according to a semiconductor process mode; and a heater support portion attached to a lower portion of the heater body to support the heater body.

Description

Technical Field

[0001] The present invention relates to an electrostatic chuck heater and a manufacturing method thereof, and more particularly, to an electrostatic chuck heater with a bipolar structure and a manufacturing method thereof. Background Art

[0002] Generally speaking, a semiconductor device or a display device is manufactured by stacking a plurality of thin film layers including a dielectric layer and a metal layer on a glass substrate, a flexible substrate or a semiconductor wafer substrate and patterning them. These thin film layers are deposited sequentially on the substrate by a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process. The CVD process includes a low pressure chemical vapor deposition (LPCVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, an organic metal chemical vapor deposition (MOCVD) process, and the like.

[0003] Such CVD and PVD apparatuses are equipped with heaters for supporting glass substrates, flexible substrates, semiconductor wafer substrates, and the like and applying a predetermined amount of heat. These heaters are also used to heat the substrates during processes such as etching thin film layers formed on the supporting substrates and firing photoresists. Ceramic heaters are widely used in these CVD and PVD apparatuses to meet the demands for precise temperature control, finer semiconductor device wiring, and precise thermal processing of semiconductor wafer substrates.

[0004] Figure 1 : is a diagram showing the structure of a ceramic heater according to the prior art. Figure 1 As shown, the ceramic heater 1 can be used to support a substrate such as a wafer in a semiconductor manufacturing process and heat the substrate to a process temperature, for example, a temperature required for performing a CVD process or a PVD process.

[0005] The ceramic heater 1 consists of a circular plate-shaped ceramic body 10 and a ceramic support 20 attached to the bottom of the ceramic body 10. The ceramic body 10 includes a ground electrode 11, which discharges the current charged in the ceramic heater 1 to ground when plasma is generated; and a heating element 13, which generates heat for heating the substrate. The ceramic support 20 includes a grounding rod 21 that connects the ground electrode 11 to the ground, and a heating element rod 23 that connects the heating element 13 to an external power source (not shown).

[0006] To ensure stable wafer loading, a pocket corresponding to the wafer size can be formed on the top of the ceramic body 10. However, when using a ceramic heater with this pocket structure in a semiconductor thin film process, when process gas flows toward the wafer, it can cause eddy currents in the gas flow through the space 30 formed between the top of the ceramic body 10 and the wafer edge, resulting in reduced deposition uniformity at the wafer edge. Summary of the Invention

[0007] Technical issues

[0008] The present invention aims to solve the aforementioned problems and other problems. Another object is to provide an electrostatic chuck heater with improved reliability and a method for manufacturing the same.

[0009] Another object is to provide an electrostatic chuck heater with a bipolar structure and a method for manufacturing the same.

[0010] Another object is to provide an electrostatic chuck heater and a method for manufacturing the same, which can adaptively select the functions of an inner electrode and an outer electrode according to a semiconductor process mode.

[0011] Technical content

[0012] To achieve the aforementioned another object, according to one aspect of the present invention, an electrostatic chuck heater is provided, comprising: a heater body having an internal electrode and an external electrode that selectively perform either an RF grounding function or an electrostatic chuck function depending on a semiconductor process mode; and a heater support portion attached to a lower portion of the heater body to support the heater body. The internal electrode may be embedded in an upper central portion of the heater body.

[0013] The external electrode may be formed on the same plane as the internal electrode. Alternatively, the external electrode may be arranged at a predetermined distance from the internal electrode. Alternatively, the external electrode may be arranged so as to surround the internal electrode.

[0014] More preferably, the heater body may further include an external electrode connecting member, the external electrode connecting member being disposed between the electrode layer and the heating element layer to electrically connect the external electrode to a rod (ROD) disposed on the heater support portion. Furthermore, the external electrode connecting member may be spaced a predetermined distance from the bottom of the internal electrode and the external electrode and disposed parallel to the corresponding electrode. Furthermore, both ends of the external electrode connecting member may be bent vertically toward the bottom of the external electrode.

[0015] More preferably, the internal electrodes, external electrodes, and external electrode connecting members may be formed in any of sheet, mesh, and paste types. Furthermore, the internal electrodes, external electrodes, and external electrode connecting members may be formed of molybdenum (Mo), which has excellent electrical conductivity.

[0016] More preferably, the electrostatic chuck heater may further include a bipolar function selection unit electrically connected to internal and external electrodes embedded in the heater body to select the functions of the internal and external electrodes. The bipolar function selection unit may include an internal electrode function selection unit that selects the function of the internal electrode and an external electrode function selection unit that selects the function of the external electrode. Furthermore, the internal electrode function selection unit may include a first capacitor C1, a first switch S1, and a first DC power supply unit that supplies a positive DC voltage V1, and the external electrode function selection unit may include a second capacitor C2, a second switch S2, and a second DC power supply unit that supplies a negative DC voltage V2.

[0017] More preferably, the bipolar function selection unit may select the corresponding electrode function in a first semiconductor process mode so that at least one of the inner electrode and the outer electrode performs a radio frequency grounding function. Furthermore, the bipolar function selection unit may select the corresponding electrode function in a second semiconductor process mode so that both the inner electrode and the outer electrode perform an electrostatic chuck function.

[0018] According to another aspect of the present invention, a method for manufacturing an electrostatic chuck heater is provided, comprising: a step of filling a first ceramic powder into a forming mold to form a first ceramic powder layer; a step of stacking a ceramic molded body having an internal electrode embedded therein, an external electrode spaced a predetermined distance from the internal electrode on the same plane, and an external electrode connecting member in contact with the external electrode on the first ceramic powder layer; a step of filling a second ceramic powder into the upper portion of the ceramic molded body to form a second ceramic powder layer; and a step of sintering the ceramic powder layer structure including the ceramic molded body at a preset pressure and temperature to form a heater main body. The method for manufacturing an electrostatic chuck heater may further comprise: a step of stacking a heating element on the upper portion of the second ceramic powder layer; and a step of filling a third ceramic powder onto the upper portion of the heating element to form a third ceramic powder layer.

[0019] More preferably, the method for manufacturing the ceramic formed body may further include: forming a groove of a predetermined shape in the upper portion of the ceramic powder layer using a jig; inserting a first external electrode into the groove formed in the upper portion of the ceramic powder layer and filling the upper portion of the first external electrode with ceramic powder; and compressing and sintering the ceramic powder layer in which the first external electrode is embedded to form a ceramic plate. Furthermore, the method for manufacturing the ceramic formed body may further include forming external electrode connecting members between the first external electrodes exposed on the lower surface of the ceramic plate using a screen printer.

[0020] More preferably, the method for manufacturing the ceramic formed body may further include: processing both surfaces of the ceramic plate to expose the first external electrode to the outside; and inserting the external electrode of the ceramic plate. The second external electrode may be disposed on top of the first external electrode, combining with the first external electrode to form a single external electrode.

[0021] According to another aspect of the present invention, an electrostatic chuck heater is provided, comprising: a heater main body, the heater main body having an internal electrode and an external electrode for selectively performing either a radio frequency grounding function or an electrostatic chuck function according to a semiconductor process mode; and a heater support portion, the heater support portion being attached to a lower portion of the heater main body to support the heater main body, the heater main body further comprising: an external electrode connecting member, the external electrode connecting member being arranged between the electrode layer and the heating element layer to electrically connect the external electrode to a rod provided on the heater support portion, the external electrode connecting member being separated from the bottom of the internal electrode and the external electrode by a predetermined distance and being arranged parallel to the internal electrode and the external electrode, and the two ends of the external electrode connecting member being bent toward the bottom direction of the external electrode.

[0022] According to another aspect of the present invention, a method for manufacturing an electrostatic suction cup heater is provided, comprising: a step of filling a first ceramic powder into a forming mold to form a first ceramic powder layer; a step of stacking a ceramic formed body having an internal electrode embedded therein, an external electrode spaced a predetermined distance from the internal electrode on the same plane, and an external electrode connecting member in contact with the external electrode on the first ceramic powder layer; a step of filling a second ceramic powder into the upper part of the ceramic formed body to form a second ceramic powder layer; and a step of sintering the ceramic powder layer structure including the ceramic formed body at a preset pressure and temperature to form a heater main body, wherein the external electrode connecting member is arranged between the electrode layer and the heating element layer, electrically connecting the external electrode to a rod arranged on the heater support portion, the external electrode connecting member is spaced a predetermined distance from the internal electrode and the external electrode and is arranged parallel to the internal electrode and the external electrode, and both ends of the external electrode connecting member are bent toward the bottom direction of the external electrode.

[0023] Technical Effects

[0024] According to at least one embodiment of the present invention, by providing an internal electrode and an external electrode that can selectively perform either an RF grounding function or an electrostatic chuck function according to a semiconductor process mode, it is possible to improve the temperature uniformity (Temperature Uniformity) and deposition uniformity (Deposition Uniformity) of a heat treatment object such as a wafer configured on the upper surface of the heater body.

[0025] In addition, according to at least one embodiment of the present invention, during the manufacturing process of the heater main body, there is no need to insert the external electrode connecting member into the through hole of the ceramic plate, nor is there any need to bend the two ends of the external electrode connecting member in a direction parallel to the ground, thereby having the advantage of improving the product reliability and operational convenience of the electrostatic suction cup heater.

[0026] However, the effects that can be achieved by the electrostatic chuck heater and the manufacturing method thereof according to the embodiments of the present invention are not limited to the above-mentioned contents, and ordinary technicians in the technical field to which the present invention belongs can clearly understand other effects not mentioned from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a diagram showing the configuration of a ceramic heater according to the prior art;

[0028] Figure 2 is a perspective view showing the appearance of an electrostatic chuck heater according to one embodiment of the present invention;

[0029] Figure 3is a cross-sectional view showing the structure of an electrostatic chuck heater according to one embodiment of the present invention;

[0030] Figure 4 It shows Figure 3 FIG. 1 is a diagram showing a configuration of a bipolar function selection portion of an electrostatic chuck heater;

[0031] Figure 5 is a diagram showing a graph of measured edge temperatures of a ceramic heater according to the prior art and an electrostatic chuck heater according to the present embodiment;

[0032] Figure 6 1 is a graph showing the results of measuring the temperature variation range of the wafer edge according to the functions and dimensions of the inner and outer electrodes of the electrostatic chuck heater of the present embodiment;

[0033] Figure 7 It is a description of the composition Figure 3 A flowchart showing a method for manufacturing a heater main body portion of an electrostatic chuck heater;

[0034] Figure 8 To illustrate the composition Figure 3 FIG. 1 is a diagram referring to a method for manufacturing a heater main body portion of an electrostatic chuck heater;

[0035] Figure 9 is a diagram illustrating a method for manufacturing a ceramic formed body according to one embodiment of the present invention;

[0036] Figures 10a to 10e is a diagram illustrating a method for manufacturing a ceramic formed body according to another embodiment of the present invention;

[0037] Figure 11 It shows Figure 10e Schematic diagram of another shape of the external electrode connection member embedded in the ceramic molded body. DETAILED DESCRIPTION

[0038] The embodiments disclosed in this specification are described in detail below with reference to the accompanying drawings, and regardless of the figure numbers, the same or similar components are given the same figure numbers and repeated descriptions thereof are omitted. Below, when describing the embodiments according to the present invention, when it is recorded that each layer (film), region, pattern or structure is formed "on" or "under" of a substrate, each layer (film), region, pad or pattern, "on" and "under" all include "directly" or "indirectly inserted into other layers" to form. In addition, the references to the upper / above or lower / lower of each layer are described based on the figure. For the convenience and clarity of the description, the thickness or size of each layer in the figure is exaggerated, omitted or briefly shown. In addition, the size of each component does not fully reflect the actual size.

[0039] Furthermore, when describing the embodiments disclosed in this specification, if it is determined that a detailed description of related known technologies may unnecessarily obscure the key points of the embodiments disclosed in this specification, such detailed description will be omitted. Furthermore, the accompanying drawings are provided solely to facilitate understanding of the embodiments disclosed in this specification. The technical concepts disclosed in this specification are not limited by the accompanying drawings and should be understood to encompass all modifications, equivalents, and alternatives within the scope of the present invention.

[0040] The present invention provides an electrostatic chuck heater with improved reliability and a method for manufacturing the same. Furthermore, the present invention provides an electrostatic chuck heater with a bipolar structure and a method for manufacturing the same. Furthermore, the present invention provides an electrostatic chuck heater capable of adaptively selecting the functions of internal and external electrodes according to semiconductor process modes and a method for manufacturing the same.

[0041] Various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0042] Figure 2 is a perspective view showing the appearance of an electrostatic chuck heater according to an embodiment of the present invention, Figure 3 is a cross-sectional view showing the structure of an electrostatic chuck heater according to one embodiment of the present invention, Figure 4 It shows Figure 3 A diagram showing the configuration of an electrostatic chuck heater including a bipolar function selection portion.

[0043] Reference Figures 2 to 4 According to one embodiment of the present invention, the electrostatic chuck heater 100 is a semiconductor device that simultaneously provides the following functions: a heat treatment function of heating a heat treatment target object for various purposes such as a semiconductor wafer, a glass substrate, a flexible substrate, etc. to a predetermined temperature; and an electrostatic chuck function of making the heat treatment target object close to the upper surface of the corresponding heater 100.

[0044] The electrostatic chuck heater 100 may include a heater body 110 that stably supports a heat treatment object (not shown) while transferring heat; a heater support 120 attached to the bottom of the heater body 110; and a bipolar function selector 130 electrically connected to the heater body 110. The bipolar function selector 130 may be integrally formed with the electrostatic chuck heater 100 or independently formed therefrom.

[0045] The heater body 110 may be formed as a plate-shaped structure having a predetermined shape. As an example, the heater body 110 may be formed as a circular plate-shaped structure, but is not necessarily limited thereto.

[0046] A pocket region (or cavity region) 111 can be formed on the upper portion of the heater body 110. This pocket region (or cavity region) 111 has a structure with a predetermined step difference, so that a heat treatment object, such as a wafer, can be stably mounted. The top surface of the heater body 110 corresponding to the pocket region can be formed to have excellent flatness. This ensures that the heat treatment object placed in the chamber is horizontally arranged without tilting to one side.

[0047] The heater body 110 may be composed of a plurality of ceramic plates (not shown) formed of a ceramic material having excellent thermal conductivity, which are formed by performing a compression sintering process on the plurality of ceramic plates. The ceramic material may be Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, B x C y , any one of BN, SiO2, SiC, YAG, Mullite, and AlF3, and more preferably, it can be aluminum nitride (AlN).

[0048] The heater body 110 may include an inner electrode 112 , an outer electrode 113 surrounding the inner electrode 112 , an outer electrode connecting member 114 below the electrodes 112 , 113 , a heating element 115 below the outer electrode connecting member 114 , and first to third rod connecting members 116 - 118 .

[0049] The inner electrode 112 may be disposed at the center of the upper portion of the heater body 110 and may be formed in a circular plate shape. The inner electrode 112 may be disposed inside the outer electrode 113 .

[0050] The internal electrode 112 can be formed in any of a mesh type, a sheet type, and a paste type, and more preferably, a mesh type. Furthermore, the internal electrode 112 can be formed of tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), aluminum nitride (AlN), or alloys thereof, and more preferably, molybdenum (Mo).

[0051] The thickness of the internal electrode 112 may be 0.1 mm to 0.5 mm, more preferably 0.2 mm. In addition, the diameter of the internal electrode 112 may be 280 mm to 290 mm, more preferably 285 mm.

[0052] This internal electrode 112 can selectively perform either a radio frequency (RF) grounding function or an electrostatic chuck function. The RF grounding function allows the current generated by the plasma in the heater body 110 during the wafer deposition process to be discharged to an external ground. The electrostatic chuck function uses an electric field to hold the object being heat treated, such as a wafer, in close contact with the heater body 110.

[0053] The external electrode 113 is disposed at the upper edge of the heater body 110 and may be formed in a ring shape. The external electrode 113 may be formed on the same plane as the internal electrode 112. Alternatively, the external electrode 113 may be formed so as to surround the internal electrode 112 while being spaced a predetermined distance apart.

[0054] The external electrode 113 can be formed in any of mesh, sheet, and paste types, and more preferably, in mesh form. Furthermore, the external electrode 113 can be formed of tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), aluminum nitride (AlN), or alloys thereof, and more preferably, of molybdenum (Mo).

[0055] The thickness of the external electrode 113 may be 0.1 mm to 0.5 mm, more preferably 0.2 mm. Furthermore, the inner diameter / outer diameter of the external electrode 113 may be 280 mm / 320 mm to 300 mm / 320 mm, more preferably 290 mm / 320 mm.

[0056] The external electrode 113 can selectively perform either an RF grounding function or an electrostatic chuck function. Similarly, the RF grounding function allows the current generated by the plasma in the chamber to be discharged to an external ground during the wafer deposition process. The electrostatic chuck function uses an electric field to hold the object being heat-treated, such as a wafer, in close contact with the heater body 110.

[0057] On the other hand, since the external electrode 113 is formed on the same plane as the internal electrode 112 and is spaced a predetermined distance apart from the internal electrode 112, it is difficult to directly connect it to the second rod (ROD) 122 formed in the center of the heater body 110. To solve this problem, the external electrode connecting member 114 can be embedded in the heater body 110.

[0058] The external electrode connecting member 114 is positioned between the electrode layer and the heating element layer, electrically connecting the external electrode 113 to the second rod 122. Specifically, the external electrode connecting member 114 electrically connects the second rod 122 located in the center of the heater body 110 to the external electrode 113 located at the edge of the heater body 110. Consequently, the internal electrode 112, the external electrode 113, and the first to third rods 121-123 embedded in the heater body 110 can be located together in the center of the heater support 120.

[0059] The external electrode connecting member 114 can be formed by extending horizontally between the electrode layer and the heating element layer of the heater main body 110. In addition, the external electrode connecting member 114 can be separated from the bottom of the internal electrode 112 and the external electrode 113 by a predetermined distance and arranged parallel to the corresponding electrodes 112 and 113. The external electrode connecting member 114 can be formed in the shape of a long and narrow plate. The two ends of the external electrode connecting member 114 can be vertically bent upward. This is to ensure that the two ends of the external electrode connecting member 114 are in contact with the bottom of the external electrode 113.

[0060] The external electrode connection member 114 can be formed in any of mesh, sheet, and paste types, and more preferably in sheet form. Furthermore, the external electrode connection member 114 can be formed of tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), aluminum nitride (AlN), or alloys thereof, and more preferably, molybdenum (Mo).

[0061] The heating element 115 may be disposed at the center of the lower portion of the heater body 110 and may be formed in a shape corresponding to the object to be heat treated. The heating element 115 may be disposed below the external electrode connection member 114 at a predetermined distance from the internal and external electrodes 112 and 113 .

[0062] The heating element 115 may be embedded in the heater main body 110 corresponding to the position of the heat treatment object. In addition, in order to uniformly heat the heat treatment object as a whole, the heating element 115 may be embedded in the heater main body 110 in parallel with the heat treatment object. This allows the heating temperature to be uniformly controlled according to the position and the distance of heat transfer to the heat treatment object to be maintained at a predetermined value at almost all positions.

[0063] The heating element 115 may be formed in a plate-shaped coil form using a heating wire (resistance wire) or a flat plate form. In addition, the heating element 115 may be formed in a multi-layer structure for precise temperature control.

[0064] The heating element 115 heats the object to be heat-treated located on the upper surface of the heater body 110 to a predetermined temperature in order to smoothly perform a deposition process and an etching process in a semiconductor manufacturing process.

[0065] The first rod connecting member 116 is disposed at the lower center surface of the internal electrode 112 and electrically connects the internal electrode 112 to the first rod 121. The second rod connecting member 117 is disposed at the lower center surface of the external electrode connecting member 114 and electrically connects the external electrode 113 to the second rod 122. The third rod connecting member 118 is disposed at the lower center surface of the heating element 115 and electrically connects the heating element 115 to the third rod 123.

[0066] The heater support portion 120 is attached to the lower portion of the heater body 110 to support the heater body 110. Therefore, the heater support portion 120 is combined with the heater body 110 to form the electrostatic chuck heater 100 having a T-shape.

[0067] The heater support 120 may be formed as a cylindrical tube having an empty space therein. This is because the heater support 120 is used to install a plurality of rods 121 to 123 connected to the inner electrode 112 , the outer electrode 113 , and the heating element 115 of the heater body 110 .

[0068] The heater support portion 120 may be formed of the same ceramic material as the heater body portion 110. As an example, the heater support portion 120 may be made of Al2O3, Y2O3, Al2O3 / Y2O3, ZrO2, AlC (Autoclaved lightweight concrete), TiN, AlN, TiC, MgO, CaO, CeO2, TiO2, B x C y , BN, SiO2, SiC, YAG, mullite (Mullite), AlF3, more preferably, it can be formed with aluminum nitride (AlN).

[0069] The first rod 121 may be disposed inside the heater support portion 120 to connect the first rod connection member 116 and the bipolar function selection portion 130 . Therefore, the bipolar function selection portion 130 may be electrically connected to the internal electrode 112 through the first rod 121 .

[0070] The second rod 122 may be disposed inside the heater support portion 120 to connect the second rod connection member 117 and the bipolar function selection portion 130 . Therefore, the bipolar function selection portion 130 may be electrically connected to the external electrode 113 via the second rod 122 .

[0071] The third rod 123 is disposed inside the heater support portion 120 and connects the third rod connection member 118 to an external power supply device (not shown). Therefore, the external power supply device can be electrically connected to the heating element 115 through the third rod 123.

[0072] The first to third rods 121 to 123 can be formed of a metal material with excellent electrical conductivity. As an example, the first to third rods 121 to 123 can be formed of copper (Cu), aluminum (Al), iron (Fe), tungsten (W), nickel (Ni), silver (Ag), gold (Au), niobium (Nb), titanium (Ti), or alloys thereof, and more preferably, nickel (Ni).

[0073] The bipolar function selection unit 130 can be electrically connected to the inner electrode 112 and the outer electrode 113 via the first and second rods 121 and 122, and can adaptively select the functions of the inner electrode 112 and the outer electrode 113 according to the semiconductor process mode. In other words, the bipolar function selection unit 130 can select the functions of the respective electrodes 112 and 113 according to the semiconductor process mode, so that the inner electrode 112 and the outer electrode 113 can perform either an RF grounding function or an electrostatic chuck function.

[0074] As an example, Figure 4As shown, the bipolar function selection unit 130 may be composed of an internal electrode function selection unit 410 that selects the function of the internal electrode 112 according to a control command of a semiconductor process system (not shown) and an external electrode function selection unit 420 that selects the function of the external electrode 113 .

[0075] The internal electrode function selection unit 410 can be electrically connected to the internal electrode 112 via the first rod 121 and includes a first capacitor C1, 411, a first switch S1, 412, and a first DC power supply V1, 413. The first capacitor 411 can be connected in parallel with the first switch 412 and the first DC power supply 413 with respect to the first node N1. The first switch 412 and the first DC power supply 413 can be connected in series between the first node and ground. Furthermore, the first DC power supply 413 can provide a predetermined positive DC voltage.

[0076] When the first switch 412 is turned off according to a control signal from the semiconductor process system, the internal electrode 112 of the electrostatic chuck heater 100 is connected to the first capacitor 411. In the radio frequency (RF) operating mode, the first capacitor 411 is shorted, and the internal electrode 112 is connected to the external ground, thereby performing an RF grounding function.

[0077] On the other hand, when the first switch 412 is turned on according to a control signal from the semiconductor process system, the internal electrode 112 of the electrostatic chuck heater 100 is connected to the first DC power supply 413. Therefore, the internal electrode 112 performs the electrostatic chuck function based on the positive DC voltage supplied from the first DC power supply 413.

[0078] The external electrode function selector 420 can be electrically connected to the external electrode 113 via the second rod 122 and includes a second capacitor C2, 421, a second switch S2, 422, and a second DC power supply V2, 423. The second capacitor 421 can be connected in parallel with the second switch 422 and the second DC power supply 423 with respect to the second node N2. The second switch 422 and the second DC power supply 423 can be connected in series between the second node and ground. Furthermore, the second DC power supply 423 can provide a predetermined negative DC voltage.

[0079] When the second switch 422 is turned off according to a control signal from the semiconductor process system, the external electrode 113 of the electrostatic chuck heater 100 is connected to the second capacitor 421. In the radio frequency (RF) operating mode, the second capacitor 421 is shorted, and the external electrode 113 is connected to the external ground, thereby performing an RF grounding function.

[0080] On the other hand, when the second switch 422 is turned on according to a control signal from the semiconductor process system, the external electrode 113 of the electrostatic chuck heater 100 is connected to the second DC power supply 423. Therefore, the external electrode 113 performs the electrostatic chuck function based on the negative DC voltage supplied from the second DC power supply 423.

[0081]

Table 1

[0082]

[0083] As shown in Table 1 above, the bipolar function selection unit 130 can adaptively select the functions of the corresponding electrodes according to the switching modes of switch 1 and switch 2, so that the inner electrode and the outer electrode can operate in either the RF grounding function or the electrostatic chuck function.

[0084] For example, in a semiconductor process mode using plasma (a first semiconductor process mode), the bipolar function selection unit 130 can select the functions of the corresponding electrodes 112 and 113 so that at least one of the inner electrode 112 and the outer electrode 113 performs an RF grounding function. On the other hand, in a semiconductor process mode not using plasma (a second semiconductor process mode), the bipolar function selection unit 130 can select the functions of the corresponding electrodes 112 and 113 so that DC voltages having different polarities are applied to the inner electrode 112 and the outer electrode 113, and both electrodes perform an electrostatic chuck function.

[0085] The electrostatic chuck heater 100 of this embodiment divides a heat treatment target, such as a wafer, into a portion with good deposition uniformity (e.g., the center of the wafer) and a portion with poor deposition uniformity (e.g., the edge of the wafer). Electrodes that function as RF grounding are formed in the portion with good deposition uniformity, while electrodes that function as electrostatic chucks are formed in the portion with poor deposition uniformity. This effectively secures a charged heat treatment target, such as a wafer, to the upper surface of the heater body. As a result, the contact surface between the heat treatment target, such as a wafer, and the heater body increases, improving electrical conductivity and enhancing temperature uniformity and deposition uniformity of the target.

[0086] As described above, an electrostatic chuck heater according to one embodiment of the present invention includes an internal electrode and an external electrode that can selectively perform either an RF grounding function or an electrostatic chuck function according to a semiconductor process mode, thereby improving the temperature uniformity and deposition uniformity of a heat treatment object such as a wafer disposed on the upper surface of the heater body.

[0087] Figure 5: is a diagram showing a graph of measured edge temperatures of a ceramic heater according to the related art and an electrostatic chuck heater according to the present embodiment.

[0088] like Figure 5 As shown, in order to test the effect of the present invention, the temperature of 8 locations on the edge of the heater was measured using a T / C wafer and compared. The temperature of each heater was set to about 550°C. The ground electrode of the ceramic heater according to the prior art used a mesh type (24 mesh) electrode with a diameter of 320 mm. Moreover, the internal electrode (i.e., the ground electrode) of the electrostatic chuck heater according to this embodiment used a mesh type (24 mesh) electrode with a diameter of 285 mm, and the external electrode (i.e., the electrostatic chuck electrode) used a ring mesh type (24 mesh) electrode with an inner diameter / outer diameter of 290 mm / 320 mm for the experiment.

[0089] According to the experimental results, the temperature range of the conventional ceramic heater was approximately 7.5°C, while the temperature range of the electrostatic chuck heater according to this embodiment was approximately 2.7°C. In other words, it was confirmed that the temperature variation range at the heater edge of the electrostatic chuck heater according to this embodiment was significantly reduced to approximately 36% compared to the conventional ceramic heater. Therefore, compared to the conventional ceramic heater, the electrostatic chuck heater according to this embodiment significantly improved the temperature uniformity of a heat treatment object such as a wafer, thereby significantly improving the deposition uniformity of the corresponding heat treatment object.

[0090] Figure 6 1 is a graph showing the results of measuring the temperature variation range of the wafer edge according to the functions and dimensions of the inner and outer electrodes of the electrostatic chuck heater of this embodiment.

[0091] like Figure 6 As shown, in this experiment, the inner electrode performed the RF grounding function, while the outer electrode selectively performed the electrostatic chuck and RF grounding functions. The inner electrode used a 24-mesh mesh with diameters of 275 mm, 280 mm, and 285 mm. The outer electrode used a 24-mesh ring-shaped mesh with inner / outer diameters of 280 mm / 320 mm, 285 mm / 320 mm, and 290 mm / 320 mm.

[0092] The experimental results confirmed that the temperature variation range at the wafer edge was minimal when the inner electrode diameter was 285 mm and the outer electrode inner / outer diameters were 290 mm / 320 mm. Furthermore, it was confirmed that the temperature variation range at the wafer edge was smaller when the outer electrode performed the electrostatic chuck function than when it performed the RF grounding function. Therefore, it was confirmed that the functions assigned to the inner and outer electrodes and the corresponding electrode diameters are closely related to the deposition uniformity and temperature uniformity of the wafer, which are the performance characteristics of the electrostatic chuck heater.

[0093] Figure 7 It is a description of the composition Figure 3 A flowchart of a method for manufacturing a heater main body portion of an electrostatic chuck heater, Figure 8 To illustrate the composition Figure 3 Refer to the figure for the manufacturing method of the heater main body of the electrostatic chuck heater.

[0094] Reference Figure 7 and Figure 8 A forming mold (or receiving mold) 710 corresponding to the overall shape of the heater body portion constituting the electrostatic chuck heater 100 according to an embodiment of the present invention and a pressurizing mold 720 for applying pressure to the ceramic powder filled in the forming mold 710 may be prepared (S710).

[0095] The first ceramic powder can be filled into the forming mold 710 to form a first ceramic powder layer 810 (S720). A ceramic molded body 820, in which internal electrodes (not shown), external electrodes (not shown), and external electrode connecting members (not shown) are embedded, can be pre-processed and stacked on top of the first ceramic powder layer 810 in the forming mold 710 (S730). At this time, the ceramic molded body 820 can be in a molded form that can maintain its shape when a predetermined pressure is applied.

[0096] Next, the second ceramic powder can be filled into the upper portion of the ceramic molded body 820 in the molding die 710 to form a second ceramic powder layer 830 (S740). Next, a heating element 840 having a spiral or mesh plate structure can be pre-processed and laminated on the upper portion of the second ceramic powder layer 830 (S750).

[0097] Then, a third ceramic powder can be filled into the upper portion of the heating element 840 in the forming mold 710 to form a third ceramic powder layer 850 (S760). The first to third ceramic powders can include aluminum nitride (AlN) powder, and optionally, can include about 0.1% to 10% of aluminum oxide powder, and more preferably, can include about 1% to 5% of aluminum oxide powder.

[0098] After the first ceramic powder layer 810, the ceramic molded body 820, the second ceramic powder layer 830, the heating element 840, and the third ceramic powder layer 850 are stacked in sequence, a predetermined pressure is applied by the press mold 720 while high-temperature heat is provided, thereby sintering the ceramic powder layers to form the heater main body 800 (S770). As an example, the heater main body 800 can be heated at about 0.01 tons / cm 2 Up to 0.3 tons / cm 2 The sintering process is carried out under a pressure of about 1600°C and a temperature of about 1950°C.

[0099] A method for manufacturing the ceramic molded body 820 that can selectively perform the RF grounding function and the electrostatic chuck function among the elements constituting the heater body 800 will be described in detail below.

[0100] Figure 9 1 is a diagram illustrating a method for manufacturing a ceramic formed body according to an embodiment of the present invention.

[0101] Reference Figure 9 A forming mold (not shown) corresponding to the overall shape of the ceramic formed body 900 can be prepared. After filling the forming mold (not shown) with ceramic powder, the ceramic powder can be sintered at a predetermined temperature and pressure to form a ceramic plate 910. Furthermore, the upper portion of the ceramic plate 910 can be machined to form a first groove for burying the first rod connecting member 930, a second groove for burying the internal electrode 950, and a third groove for burying the external electrode 960. Furthermore, the edge portion of the ceramic plate 910 can be machined to form a through-hole for burying the external electrode connecting member 920.

[0102] Then, the external electrode connection member 920 can be inserted into the ceramic plate 910 with multiple grooves. At this time, the external electrode connection member 920 can be bent horizontally to the ground and formed in parallel with the ceramic plate 910 to electrically connect to the external electrode 960.

[0103] After the external electrode connection member 920 is installed, the first rod connection member 930 may be inserted into the first groove formed on the upper portion of the ceramic plate 910 . Furthermore, the second rod connection member 940 may be attached to the lower surface of the external electrode connection member 920 .

[0104] After the first and second rod connection members 930 and 940 are provided, the internal electrode 950 can be inserted into the second groove formed on the upper portion of the ceramic plate 910, and the external electrode 960 can be inserted into the third groove formed on the upper portion of the ceramic plate 910. Accordingly, the internal electrode 950 can be electrically connected to the first rod connection member 930, and the external electrode 960 can be electrically connected to the second rod connection member 940 through the external electrode connection member 920.

[0105] Such external electrode connection member 920, internal electrode 950, and external electrode 960 can be formed in any one of a sheet type, a mesh type, and a paste type. In addition, the external electrode connection member 920, internal electrode 950, and external electrode 960 can be formed of molybdenum (Mo) having excellent conductivity. In addition, the external electrode connection member 920 can be formed in a thin and long plate shape processed into a "C" shape, the internal electrode 950 can be formed in a circular plate shape, and the external electrode 960 can be formed in a ring shape.

[0106] However, in the method for manufacturing a ceramic molded body as described above, due to poor alignment of the bent portion of the external electrode connection member 920 in contact with the external electrode 960, a problem of poor electrical conduction between the external electrode 960 and the external electrode connection member 920 may occur. In addition, there is a possibility that the through holes of the ceramic plate 910 cannot be completely filled with powder, and thus problems such as poor RF grounding function, poor electrostatic chuck function, and product cracks may occur. Another method for manufacturing a ceramic molded body that can solve such problems will be described below.

[0107] Figures 10a to 10e FIG. is a view for explaining a method for manufacturing a ceramic molded body according to another embodiment of the present invention.

[0108] Referring to Figure 10a , a molding die 1010 corresponding to the overall shape of the ceramic molded body 1000 can be prepared. The ceramic powder 1020 can be filled to a predetermined height in the molding die 1010 to form a ceramic powder layer. At this time, the ceramic powder 1020 can be formed of aluminum nitride (AlN), but is not necessarily limited thereto.

[0109] Then, a jig 1030 for forming a groove having a preset shape on the upper portion of the ceramic powder layer 1020 can be provided. The jig 1030 can be moved toward the molding die 1010, and a first groove 1021 can be formed on the upper portion of the ceramic powder layer 1020 filled in the molding die 1010.

[0110] Referring to Figure 10bA first columnar external electrode 1060a can be inserted into the first groove 1021 formed in the upper portion of the ceramic powder layer 1020. After the first external electrode 1060a is inserted, additional ceramic powder can be added to the forming mold 1010 to fully cover the first external electrode 1060a. The ceramic powder layer filled in the forming mold 1010 can be sintered at a predetermined temperature and pressure to form the ceramic plate 1020. The ceramic plate 1020 can then be separated from the forming mold 1010.

[0111] Reference Figure 10c Both surfaces of the ceramic plate 1020 can be machined to expose the first external electrode 1060a. Furthermore, the upper portion of the ceramic plate 1020 can be machined to form a second groove 1022 for embedding the first rod connecting member 1040, a third groove 1023 for embedding the internal electrode 1050, and a fourth groove 1024 for embedding the second external electrode 1060b.

[0112] Then, the first rod connecting member 1040 may be inserted into the second groove 1022 formed in the upper portion of the ceramic plate 1020. After the first rod connecting member 1040 is inserted, the internal electrode 1050 may be inserted into the third groove 1023 formed in the upper portion of the ceramic plate 1020. Thus, the internal electrode 1050 may be electrically connected to the first rod connecting member 1040.

[0113] After the internal electrode 1050 is inserted, the second external electrode 1060b can be inserted into the fourth groove 1024 formed on the upper portion of the ceramic plate 1020. At this time, the second external electrode 1060b can be combined with the first external electrode 1060a to form a single external electrode 1060. Therefore, the second external electrode 1060b can be electrically connected to the first external electrode 1060a.

[0114] Reference Figure 10d and Figure 10e The external electrode connecting member 1030 can be attached to the lower surface of the ceramic plate 1020 using a screen printer (not shown). In this case, the external electrode connecting member 1030 can be arranged in a straight line between the first external electrodes 1060a exposed on the lower surface of the ceramic plate 1020. Therefore, the external electrode connecting member 1030 can be electrically connected to the first external electrode 1060a and the second external electrode 1060b.

[0115] On the other hand, in this embodiment, the external electrode connection member 1030 attached to the lower surface of the ceramic plate 1020 forms a line, but it is not necessarily limited to this. Figure 11As shown, the external electrode connection member 1030 attached to the lower surface of the ceramic board 1020 may be formed in 2 lines or 4 lines. In addition, the external electrode connection member 1030 may be formed in various designs.

[0116] Then, a second rod connection member 1070 may be attached to a central location on the lower surface of the external electrode connection member 1030. Thus, the second rod connection member 1070 may be electrically connected to the first and second external electrodes 1060a and 1060b through the external electrode connection member 1030.

[0117] The external electrode connection member 1030, the internal electrode 1050, and the external electrode 1060 can be formed in any of sheet, mesh, and paste forms. Furthermore, the external electrode connection member 1030, the internal electrode 1050, and the external electrode 1060 can be formed of molybdenum (Mo), which has excellent electrical conductivity. Furthermore, the external electrode connection member 1030 can be formed in the form of a long, straight strip, the internal electrode 1050 can be formed in the form of a circular plate, and the external electrode 1060 can be formed in the form of a ring.

[0118] As described above, the method for manufacturing a ceramic formed body according to another embodiment of the present invention does not require inserting the external electrode connecting member into the through hole of the ceramic plate, and does not require bending both ends of the external electrode connecting member in a direction parallel to the ground. Figure 9 Compared with the ceramic molded body manufacturing method, the product reliability and operation convenience can be improved.

[0119] On the other hand, the above description is based on specific embodiments of the present invention. However, it is apparent that various modifications may be made without departing from the scope of the present invention. Therefore, the scope of the present invention is not limited to the described embodiments but is to be determined by the following claims and their equivalents.

Claims

1. An electrostatic chuck heater, comprising: a heater body portion including an inner electrode and an outer electrode that selectively perform either a radio frequency grounding function or an electrostatic chuck function according to a semiconductor process mode; as well as A heater support portion, which is mounted on the lower portion of the heater main body to support the heater main body. The heater main body further includes an external electrode connecting member, which is disposed between the electrode layer and the heating element layer and electrically connects the external electrode to a rod provided on the heater support portion. The external electrode connecting member is spaced a predetermined distance from the lower surfaces of the internal electrode and the external electrode and is arranged in parallel with the internal electrode and the external electrode. Both ends of the external electrode connection member are bent toward the lower surface of the external electrode.

2. The electrostatic chuck heater according to claim 1, wherein: The external electrodes are formed on the same plane as the internal electrodes.

3. The electrostatic chuck heater according to claim 1, wherein: The external electrode is arranged at a predetermined distance from the internal electrode.

4. The electrostatic chuck heater according to claim 1, wherein: The outer electrode is arranged to surround the inner electrode.

5. The electrostatic chuck heater according to claim 1, wherein: The internal electrode is embedded in an upper center portion of the heater body.

6. The electrostatic chuck heater according to claim 1, wherein: The internal electrodes, the external electrodes, and the external electrode connecting members are formed in any one of a sheet type, a mesh type, and a paste type.

7. The electrostatic chuck heater according to claim 1, wherein: The internal electrodes, external electrodes, and external electrode connecting members are formed of molybdenum having excellent electrical conductivity.

8. The electrostatic chuck heater according to claim 1, wherein: Also includes: A bipolar function selection portion is electrically connected to an internal electrode and an external electrode embedded in the heater body portion, and selects functions of the internal electrode and the external electrode.

9. The electrostatic chuck heater according to claim 8, wherein: The bipolar function selection portion includes an internal electrode function selection portion that selects a function of the internal electrode and an external electrode function selection portion that selects a function of the external electrode.

10. The electrostatic chuck heater according to claim 9, wherein: The internal electrode function selection unit includes a first capacitor, a first switch, and a first DC power supply unit that supplies a positive DC voltage. The external electrode function selection unit includes a second capacitor, a second switch, and a second DC power supply unit that supplies a negative DC voltage.

11. The electrostatic chuck heater according to claim 8, wherein: The bipolar function selection unit selects a corresponding electrode function in a first semiconductor process mode so that at least one of the inner electrode and the outer electrode performs a radio frequency grounding function.

12. The electrostatic chuck heater according to claim 8, wherein: The bipolar function selection unit selects corresponding electrode functions in a second semiconductor process mode so that both the inner electrode and the outer electrode perform an electrostatic chuck function.

13. A method for manufacturing an electrostatic chuck heater, comprising: Filling a molding die with a first ceramic powder to form a first ceramic powder layer; A step of laminating a ceramic compact having an internal electrode embedded therein, an external electrode spaced a predetermined distance from the internal electrode on the same plane, and an external electrode connecting member in contact with the external electrode on the first ceramic powder layer; Filling the upper portion of the ceramic formed body with a second ceramic powder to form a second ceramic powder layer; as well as a step of sintering the ceramic powder layer structure including the ceramic compact at a predetermined pressure and temperature to form a heater main body; The external electrode connecting member is arranged between the electrode layer and the heating element layer, and electrically connects the external electrode to a rod provided on the heater support portion. The external electrode connection member is spaced a predetermined distance from the internal electrode and the external electrode and is arranged in parallel with the internal electrode and the external electrode. Both ends of the external electrode connection member are bent toward the lower surface of the external electrode.

14. The method for manufacturing an electrostatic chuck heater according to claim 13, wherein: Also includes: a step of laminating a heating element on top of the second ceramic powder layer; as well as The step of filling a third ceramic powder on the upper portion of the heating element to form a third ceramic powder layer.

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