Substrate processing methods

Abstract

This invention relates to a substrate processing method. The objective of this invention is to efficiently remove photoresist from the upper surface of a substrate. The substrate processing method of this invention comprises the following steps: supplying a processing liquid to the upper surface of the substrate; forming a liquid film of the processing liquid on at least a portion of the upper surface of the substrate with a first thickness, and subjecting the liquid film to plasma treatment at atmospheric pressure; and forming a liquid film of the processing liquid on at least a portion of the upper surface of the substrate with a second thickness, and subjecting the liquid film to plasma treatment at atmospheric pressure; wherein the first thickness is less than the second thickness.

Description

Technical Field

[0001] The technology disclosed in this specification relates to a substrate processing method. Substrates that are the object of processing include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, substrates for flat panel displays (FPDs) such as organic EL (electroluminescence) display devices, substrates for optical discs, substrates for magnetic disks, substrates for magneto-optical discs, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (FEDs), or substrates for solar cells. Background Technology

[0002] There has been a long history of plasma treatment of the processing solution supplied to the substrate in order to remove the resist used in substrate processing.

[0003] [Background Technical Documents]

[0004] [Patent Literature]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2002-53312 Summary of the Invention

[0006] [The problem the invention aims to solve]

[0007] As mentioned above, even when plasma processing is performed while the photoresist on the upper surface of the substrate is removed using a processing solution, the degree of photoresist removal by the processing solution will vary depending on the pattern density of the photoresist.

[0008] This results in problems such as resist residue remaining on the upper surface of the substrate, or a longer processing time required to remove all the resist.

[0009] The technology disclosed in this specification was developed in view of the problems described above, and is used to efficiently remove resist from the upper surface of a substrate.

[0010] [Technical means to solve the problem]

[0011] The substrate processing method, as a first aspect of the technology disclosed in this specification, is for removing resist from the upper surface of a substrate and includes the following steps: supplying a processing liquid to the upper surface of the substrate; forming a liquid film of the processing liquid on at least a portion of the upper surface of the substrate with a first thickness, and subjecting the liquid film to plasma treatment at atmospheric pressure; and forming a liquid film of the processing liquid on at least a portion of the upper surface of the substrate with a second thickness, and subjecting the liquid film to plasma treatment at atmospheric pressure; wherein the first thickness is less than the second thickness.

[0012] The substrate processing method, which is the second aspect of the technology disclosed in this specification, relates to the first aspect, wherein the processing solution contains sulfuric acid.

[0013] The substrate processing method, which is the third aspect of the technology disclosed in this specification, relates to the first or second aspect, wherein the first thickness is 0.1 mm or more and less than 0.25 mm, and the second thickness is 0.35 mm or more and less than 2 mm.

[0014] The substrate processing method, which is the fourth aspect of the technology disclosed in this specification, relates to any of the first to third aspects, wherein the process of plasma processing the liquid film having the first thickness is performed in a first region on the upper surface of the substrate, and the process of plasma processing the liquid film having the second thickness is performed in a second region on the upper surface of the substrate, which is different from the first region.

[0015] The substrate processing method, which is the fifth aspect of the technology disclosed in this specification, relates to the fourth aspect, wherein the pattern density of the resist formed in the first region is higher than the pattern density of the resist formed in the second region.

[0016] The substrate processing method, which is the sixth aspect of the technology disclosed in this specification, relates to any of the first to third aspects, wherein the process of plasma processing the liquid film having the first thickness is performed in a first region on the upper surface of the substrate, and the process of plasma processing the liquid film having the second thickness is performed in a second region on the upper surface of the substrate, wherein at least a portion of the first region and the second region overlap.

[0017] The substrate processing method, which is the seventh aspect of the technology disclosed in this specification, relates to the sixth aspect, wherein the first region and the second region are the entire upper surface of the substrate.

[0018] The substrate processing method, which is the eighth aspect of the technology disclosed in this specification, relates to any of the first to seventh aspects, wherein after performing a plasma processing step on the liquid film having the first thickness, a plasma processing step on the liquid film having the second thickness is performed.

[0019] The substrate processing method, which is the ninth aspect of the technology disclosed in this specification, relates to any of the first to seventh aspects, wherein after performing a plasma processing step on the liquid film having the second thickness, a plasma processing step on the liquid film having the first thickness is performed.

[0020] [The effects of the invention]

[0021] According to at least a first aspect of the technology disclosed in this specification, when liquid films of different thicknesses are formed, resists with different pattern densities can be efficiently removed by plasma treatment of each liquid film.

[0022] Furthermore, the objectives, features, forms, and advantages related to the technology disclosed in this specification will become clearer from the following detailed description and accompanying drawings. Attached Figure Description

[0023] Figure 1 This is a top view that schematically illustrates an example of the configuration of the substrate processing apparatus of the first embodiment.

[0024] Figure 2 It means Figure 1 The diagram illustrates an example of the structure of the control unit.

[0025] Figure 3 This is a side view that schematically illustrates an example of the configuration of a processing unit in a substrate processing apparatus.

[0026] Figure 4 This is a cross-sectional view that roughly represents an example of the configuration of a nozzle head.

[0027] Figure 5 This is a top view showing an example of the configuration of an electrode group.

[0028] Figure 6 Is with Figure 5 The sectional view corresponding to the C-C' section.

[0029] Figure 7 This is a flowchart illustrating an example of the actions of a processing unit.

[0030] Figure 8 This is a diagram illustrating an example of a liquid film formed on the surface of a substrate during drug treatment.

[0031] Figure 9 This is a diagram illustrating an example of a liquid film formed on the surface of a substrate during drug treatment.

[0032] Figure 10 This is another example of a liquid film formed on the surface of a substrate during drug treatment.

[0033] Figure 11 This is another example of a liquid film formed on the surface of a substrate during drug treatment.

[0034] Figure 12 This is a side view that schematically illustrates an example of the configuration of the nozzle head in the second embodiment.

[0035] Figure 13 This is a top view that schematically illustrates an example of the configuration of the nozzle head in the second embodiment. Detailed Implementation

[0036] Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features are shown for the purpose of illustrating the technology, but these are merely illustrative and not all features are necessary for the implementation of the embodiments.

[0037] Furthermore, the accompanying drawings are schematic representations, and for ease of explanation, components may be appropriately omitted or simplified in the drawings. Additionally, the relative sizes and positions of components shown in different drawings may not be accurately depicted and may be appropriately altered. Furthermore, in drawings such as top views that are not sectional views, shading lines may be used to facilitate understanding of the embodiments.

[0038] Furthermore, in the following descriptions, the same symbols are used to illustrate the same components, and their names and functions are also the same. Therefore, to avoid repetition, detailed descriptions are sometimes omitted.

[0039] Furthermore, in the following descriptions, when a constituent element is described as "possessing," "including," or "having," unless otherwise specified, these descriptions are not exclusive expressions that exclude the existence of other constituent elements.

[0040] Furthermore, in the following description, even if ordinal numbers such as "first" or "second" are used, these terms are only used expediently to facilitate understanding of the implementation method and are not limited to the possible order in which these ordinal numbers may be formed.

[0041] In addition, in the following descriptions, expressions indicating equal states, such as "same," "equal," "uniform," or "homogeneous," unless otherwise specified, include: situations indicating strictly equal states, and situations where differences occur within tolerance or within the range that can achieve the same level of functionality.

[0042] Furthermore, in the following description, even if terms such as "up," "down," "left," "right," "side," "bottom," "positive," or "negative" are used to indicate a specific position or direction, these terms are only used expediently to facilitate understanding of the implementation method and are unrelated to the actual position or direction during implementation.

[0043] Furthermore, in the following description, when it is described as "...the upper surface" or "...the lower surface", it includes not only the upper surface or lower surface of the target constituent element itself, but also the state in which other constituent elements are formed on the upper surface or lower surface of the target constituent element. That is, for example, when it is described as "B set on the upper surface of A", it does not prevent the existence of other constituent element "C" between A and B.

[0044] The substrate processing method of this embodiment will be described below.

[0045] <First Embodiment>

[0046] <Regarding the configuration of the substrate processing apparatus>

[0047] Figure 1 This is a top view schematically illustrating an example of the configuration of the substrate processing apparatus 1 according to the first embodiment. The substrate processing apparatus 1 includes a load port 601, a transfer robot 602, a central robot 603, a control unit 90, and at least one processing unit 600. Figure 1 (There are 4 processing units in the middle).

[0048] The processing unit 600 is a monolithic device that can be used for substrate processing; specifically, it is a device for removing organic matter adhering to the substrate W. The organic matter adhering to the substrate W is, for example, a used photoresist film. This photoresist film is, for example, a photoresist film used as an implantation mask in an ion implantation process.

[0049] Furthermore, the processing unit 600 may have a chamber 180. In this case, by controlling the atmosphere within the chamber 180 using the control unit 90, the processing unit 600 can perform substrate processing in a desired atmosphere.

[0050] The control unit 90 can control the operation of each component in the substrate processing apparatus 1 (hereinafter referred to as the head moving mechanism 30, chuck 22, rotating mechanism 23, valve 46, valve 52a and valve 52b, electrode group 7, etc.). The carrier C is a receiving container for holding the substrate W. Additionally, the load port 601 is a receiving container holding mechanism that holds multiple carriers C. The transfer robot 602 can transport the substrate W between the load port 601 and the substrate placement unit 604. The central robot 603 can transport the substrate W between the substrate placement unit 604 and the processing unit 600.

[0051] Based on the above configuration, the transfer robot 602, the substrate placement unit 604, and the central robot 603 function as a transfer mechanism for transferring the substrate W between each processing unit 600 and the load port 601.

[0052] The untreated substrate W is removed from the carrier C by the transfer robot 602. Then, the untreated substrate W is delivered to the central robot 603 via the substrate placement unit 604.

[0053] The central robot 603 moves the untreated substrate W into the processing unit 600. Then, the processing unit 600 processes the substrate W.

[0054] In processing unit 600, the processed substrate W is removed from processing unit 600 by central robot 603. Then, as needed, the processed substrate W passes through other processing units 600 and is delivered to transfer robot 602 via substrate placement unit 604. Transfer robot 602 moves the processed substrate W into carrier C. Through the above operations, the substrate W is processed.

[0055] Figure 2 It means Figure 1 The diagram illustrates an example of the configuration of the control unit 90. The control unit 90 can be configured as a conventional computer with circuitry. Specifically, the control unit 90 includes a central processing unit (CPU) 91, a read-only memory (ROM) 92, a random access memory (RAM) 93, a storage device 94, an input unit 96, a display unit 97, and a communication unit 98, as well as a bus 95 connecting them to each other.

[0056] ROM 92 stores the basic program. RAM 93 is used as the operating area for CPU 91 to perform specified processing. Storage device 94 includes non-volatile storage devices such as flash memory or hard disk drives. Input unit 96 includes various switches or touch panels, etc., to receive input setting instructions such as processing schemes from the operator. Display unit 97 includes, for example, an LCD display and indicator lights, and displays various information under the control of CPU 91. Communication unit 98 has the function of data communication via local area network (LAN).

[0057] In the storage device 94, there are preset settings related to Figure 1 The substrate processing apparatus 1 has multiple control modes related to each component. By executing a processing program 94P on the CPU 91, one of these multiple modes is selected, and each component is controlled in that mode. Furthermore, the processing program 94P can also be stored in a recording medium. If this recording medium is used, the processing program 94P can be installed in the control unit 90. Additionally, some or all of the functions performed by the control unit 90 do not necessarily need to be implemented using software; they can also be implemented using hardware such as dedicated logic circuits.

[0058] <Regarding the structure of the processing unit>

[0059] Figure 3 This is a side view that schematically illustrates an example of the configuration of the processing unit 600 in the substrate processing apparatus 1. Furthermore, the multiple processing units 600 may have the same configuration or different configurations.

[0060] like Figure 3 As illustrated, the processing unit 600 includes a substrate holding section 2, a nozzle head 3, and a head moving mechanism 30.

[0061] The substrate holding part 2 holds the substrate W in a horizontal position and rotates the substrate W about the rotation axis Q1. Here, "horizontal position" means that the thickness direction of the substrate W is along the vertical direction (…). Figure 3 The orientation (Z-axis direction) of the substrate. Furthermore, the rotation axis Q1 is an axis passing through the center of the substrate W and along the vertical direction. This substrate holding part 2 is also called a rotating chuck.

[0062] Hereinafter, the radial and circumferential directions based on the rotation axis Q1 will sometimes be referred to simply as the radial and circumferential directions.

[0063] While supplying the processing liquid to the upper surface of the substrate W held by the substrate holding part 2, the nozzle head 3 also supplies the upper surface of the substrate W with gas that has passed through the plasma electric field space described below. Figure 3 In the diagram, dashed arrows schematically represent the processing liquid flowing from nozzle 3 toward substrate W, and solid arrows schematically represent the gas flowing from nozzle 3 toward substrate W. Furthermore, the so-called electric field space, as described in detail below, refers to the space to which an electric field is applied to generate plasma. When the gas passes through the electric field space, a portion of the gas is plasma-generated, generating various active species (e.g., oxygen free radicals). These active species move along the gas flow and are supplied to the upper surface of substrate W (plasma treatment).

[0064] Figure 3 In this example, the nozzle head 3 is positioned vertically above the substrate W held by the substrate holding part 2, supplying processing liquid and gas to the upper surface of the substrate W.

[0065] like Figure 3 As illustrated, the nozzle head 3 includes a liquid treatment nozzle 4 and a plasma generation unit 5.

[0066] The treatment liquid nozzle 4 has an outlet 4a on its lower end face, from which the treatment liquid is sprayed toward the upper surface of the substrate W. Here, the treatment liquid is assumed to be sulfuric acid, but it may also be, for example, a liquid containing at least one of sulfate, persulfate, and persulfate, or a liquid containing hydrogen peroxide. The treatment liquid is typically an aqueous solution.

[0067] When viewed along the rotation axis Q1 (i.e., from above), the plasma generation unit 5 is positioned adjacent to the processing liquid nozzle 4 and is integrated with the processing liquid nozzle 4.

[0068] Gas is supplied from the gas supply unit 50 to the plasma generating unit 5, and the gas flows toward the upper surface of the substrate W in the gas flow path 60 within the plasma generating unit 5. The gas may be, for example, an oxygen-containing gas. The oxygen-containing gas may include, for example, oxygen, ozone, carbon dioxide, air, or a mixture of at least two of these.

[0069] The gas may also contain an inert gas. Inert gases include, for example, nitrogen, argon, neon, helium, or a mixture of at least two of them.

[0070] As described below, the plasma generation unit 5 has an electrode group 7 downstream of the gas flow path 60, which applies an electric field to the surrounding electric field space. When gas passes through this electric field space, the electric field acts on the gas. As a result, a portion of the gas is ionized to generate plasma. For example, inert gases such as argon are ionized to generate plasma. Here, as an example, plasma is generated at atmospheric pressure. Atmospheric pressure, for example, refers to 80% or more and 120% or less of standard atmospheric pressure.

[0071] When plasma is generated, various reactions occur due to electron collisions, such as the dissociation and excitation of molecules and atoms, as well as the generation of highly reactive neutral free radicals and other active species. For example, ions or electrons in the plasma act on oxygen-containing gas to generate oxygen free radicals. These active species move along the gas flow and flow out from the lower end of the plasma generation unit 5 toward the upper surface of the substrate W held by the substrate holding part 2 (plasma processing).

[0072] The nozzle head 3 is configured to move via the head moving mechanism 30. The head moving mechanism 30 moves the nozzle head 3 at least along the moving direction D1 (along...). Figure 3 The nozzle head 3 moves along the X-axis direction (D1) along the upper surface of the substrate W held by the substrate holder 2. For example, when viewed from above, the head moving mechanism 30 causes the nozzle head 3 to move back and forth along the diameter of the substrate W. The head moving mechanism 30 may include, for example, a linear motion mechanism such as a linear motor or a ball screw mechanism.

[0073] Alternatively, the head moving mechanism 30 may include an arm-type moving mechanism instead of a linear motion mechanism. In this case, the nozzle head 3 is connected to the front end of an arm extending in the horizontal direction. The base end of the arm is connected to a support column extending in the vertical direction. This support column is connected to a motor and rotates about the central axis of the support column along the vertical direction. The rotation of the support column about its central axis causes the arm to rotate in the horizontal plane about the central axis, and the nozzle head 3, located at the front end of the arm, moves in an arc shape in the horizontal plane about the central axis. The head moving mechanism 30 is configured such that this arc-shaped movement path follows the diameter of the substrate W when viewed from above. In this way, the head moving mechanism 30 can move the nozzle head 3 parallel to the upper surface of the substrate W.

[0074] The head moving mechanism 30 can also move the nozzle head 3 between a standby position and a processing position along its movement path. Here, the standby position refers to the position where the nozzle head 3 does not interfere with the transport path of the substrate W during the loading and unloading of the substrate W, for example, a position that is radially outward from the substrate holding part 2 when viewed from above. The processing position refers to the position where the nozzle head 3 supplies processing liquid and gas to the substrate W, which is the position where the nozzle head 3 and the upper surface of the substrate W face each other in the vertical direction.

[0075] The head moving mechanism 30 can also cause the nozzle head 3 to reciprocate within a range of motion between the processing liquid nozzle 4 and the upper surface of the substrate W. For example, the head moving mechanism 30 can cause the nozzle head 3 to reciprocate between a first peripheral position where the processing liquid nozzle 4 faces the peripheral edge on one side of the substrate W in the diametrical direction, and a second peripheral position where the processing liquid nozzle 4 faces the peripheral edge on the other side of the substrate W. Figure 3 In the example, the treatment fluid nozzle 4 is schematically represented by a double-dotted line when the nozzle head 3 is in the first peripheral position.

[0076] According to this processing unit 600, processing liquid and gas can be supplied to the upper surface of the rotating substrate W while the nozzle head 3 is moving back and forth (so-called scanning processing). Through this scanning processing, processing liquid and gas can be supplied to the entire upper surface of the substrate W, and the substrate W can be processed more uniformly.

[0077] Furthermore, in this scanning process, the nozzle head 3 does not necessarily have to move back and forth between the first peripheral position and the second peripheral position. For example, the head moving mechanism 30 can also move the nozzle head 3 back and forth between the central position facing the center of the processing liquid nozzle 4 and the center of the substrate W and the first peripheral position. Thus, processing liquid and gas can be supplied to the entire surface of the upper surface of the rotating substrate W.

[0078] The processing liquid flows radially outward on the upper surface of substrate W, and disperses outward from the periphery of substrate W. Therefore, Figure 3In this example, a cup 8 is provided in the processing unit 600. The cup 8 has a cylindrical shape that surrounds the substrate holding part 2. The central axis of the cylindrical shape of the cup 8 is aligned with the rotation axis Q1. The processing liquid that splashes outward from the periphery of the substrate W collides with the inner peripheral surface of the cup 8, flows downward and is collected by a recovery mechanism (not shown), or discharged to the outside by a drainage mechanism (not shown).

[0079] Furthermore, in the processing unit 600, an exhaust port (not shown) is provided radially outward from the substrate holding section 2. For example, the exhaust port may be provided in the cup 8. The active species and gas supplied to the upper surface of the substrate W flow radially outward along the upper surface of the substrate W and are discharged from the exhaust port.

[0080] <Regarding the substrate holding section>

[0081] Figure 3 In the example, the substrate holding part 2 includes a substrate 21, multiple clamps 22 and a rotation mechanism 23.

[0082] The substrate 21 has a circular plate shape centered on the rotation axis Q1, and a plurality of chucks 22 are provided on its upper surface. The plurality of chucks 22 are arranged at equal intervals along the periphery of the substrate W. The chucks 22 can be driven between a clamping position in contact with the periphery of the substrate W and a releasing position away from the periphery of the substrate W. When the plurality of chucks 22 are in their respective clamping positions, the plurality of chucks 22 hold the periphery of the substrate W. On the other hand, when the plurality of chucks 22 are in their respective releasing positions, the holding of the substrate W is released. A chuck driving unit (not shown) that drives the plurality of chucks 22 includes, for example, a linkage mechanism and magnets, and is controlled by a control unit 90.

[0083] The rotating mechanism 23 includes a motor 231. The motor 231 is connected to the lower surface of the substrate 21 via a shaft 232 and its operation is controlled by the control unit 90. The motor 231 causes the shaft 232 and the substrate 21 to rotate about the rotation axis Q1, thereby causing the substrate W held by the plurality of chucks 22 to also rotate about the rotation axis Q1.

[0084] Furthermore, the substrate holding portion 2 does not necessarily need to have a chuck 22. The substrate holding portion 2 can also hold the substrate W by, for example, suction force or electrostatic force.

[0085] <About the nozzle head>

[0086] Figure 4 This is a cross-sectional view that schematically shows an example of the configuration of the nozzle head 3. Figure 4 Corresponding to Figure 3 Section A-A'. See below, referring to... Figure 3 and Figure 4 The nozzle head 3 will be described.

[0087] <About the treatment fluid nozzle>

[0088] The treatment fluid nozzle 4 of the nozzle head 3 is formed, for example, of an insulator (dielectric) such as resin (e.g., PTFE (polytetrafluoroethylene)) or quartz, and has a cylindrical shape in the illustrated example. Furthermore, from the viewpoint of preventing dissolution due to exposure to plasma, the treatment fluid nozzle 4 is preferably not formed of resin, but of quartz or ceramic.

[0089] The treatment fluid nozzle 4 has a spray outlet 4a on its lower end face. In the illustrated example, the treatment fluid flow path 4b inside the treatment fluid nozzle 4 extends in a vertical direction, and the lower end opening of the treatment fluid flow path 4b corresponds to the spray outlet 4a.

[0090] The treatment fluid nozzle 4 is connected to one end of the treatment fluid supply pipe 45. Figure 3 In this example, the upper end of the processing fluid nozzle 4 is connected to one end of the processing fluid supply pipe 45. That is, the upper opening 4c of the processing fluid flow path 4b is connected to one end opening of the processing fluid supply pipe 45. On the other hand, the other end of the processing fluid supply pipe 45 is connected to the processing fluid supply source 47. The processing fluid supply source 47, for example, has a tank for storing processing fluid.

[0091] A valve 46 is installed in the processing liquid supply pipe 45. The valve 46 is controlled by the control unit 90. When the valve 46 is open, the processing liquid flows from the processing liquid supply source 47 along the interior of the processing liquid supply pipe 45 and is supplied to the processing liquid nozzle 4. The processing liquid flows from top to bottom in the processing liquid flow path 4b and is ejected from the nozzle outlet 4a toward the upper surface of the substrate W. When the valve 46 is closed, the ejection of the processing liquid from the nozzle outlet 4a of the processing liquid nozzle 4 stops.

[0092] Furthermore, the processing unit 600 may also be configured to supply various processing liquids to the upper surface of the substrate W. For example, the processing liquid nozzle 4 may also have multiple processing liquid flow paths. In this case, each processing liquid flow path is individually connected to various processing liquid supply sources. Additionally, the processing unit 600 may also include a nozzle separate from the nozzle head 3.

[0093] Various treatment solutions can be used, such as pure water, ozone water, carbonated water, and isopropanol, in addition to chemical solutions like sulfuric acid. Here, the treatment solution nozzle 4 is configured to have multiple treatment solution flow paths.

[0094] <About the Plasma Generation Unit>

[0095] The plasma generation unit 5 includes a unit body 6 and an electrode group 7. The unit body 6 forms a gas flow path 60 for allowing gas from the gas supply section 50 to flow toward the upper surface of the substrate W. The electrode group 7 is disposed downstream of the gas flow path 60 and is configured to allow gas to pass through, as described below. The electrode group 7 applies a voltage to the surrounding space (electric field space). Furthermore, when the gas passes through the electric field space, an electric field is applied to the gas, and through the application of this electric field, a portion of the gas is ionized to generate plasma. When these plasmas are generated, various active species are generated, and these active species are supplied to the upper surface of the substrate W along with the gas flow (plasma treatment).

[0096] <About the Unit Body>

[0097] The unit body 6 is formed of an insulator (dielectric) such as quartz or ceramic. In the illustrated example, the unit body 6 has an upper surface portion 61 and a sidewall portion 62.

[0098] The upper surface portion 61 has, for example, a plate-like shape, and is positioned such that its thickness direction is along the vertical direction. When viewed from above, the upper surface portion 61 has, for example, a rectangular shape. The upper surface portion 61 is positioned such that one side is positioned such as along the moving direction D1 of the nozzle head 3. Figure 3 In this example, a through hole 61a is formed in the center of the upper surface portion 61. The through hole 61a extends vertically through the upper surface portion 61, and the processing fluid nozzle 4 is disposed through the through hole 61a. Thus, the processing fluid nozzle 4 is fixed relative to the upper surface portion 61.

[0099] The sidewall portion 62 is provided around the entire periphery of the upper surface portion 61 and extends vertically downward from the periphery of the upper surface portion 61. The sidewall portion 62 has an angular column shape that surrounds the treatment liquid nozzle 4. The space surrounded by the upper surface portion 61 and the sidewall portion 62 corresponds to the gas flow path 60.

[0100] In the unit body 6, an inlet 611 is formed that communicates with the gas flow path 60. Figure 3 In this example, inlet 611 is formed on the upper surface portion 61. Inlet 611 is connected to gas supply portion 50, and gas supply portion 50 supplies gas to gas flow path 60 via inlet 611.

[0101] In the illustrated example, the unit body 6 has one or more flow path dividing sections 63 in the moving direction D1 of the nozzle head 3, which divide the gas flow path 60 into multiple gas dividing flow paths 60a, 60b, 60c and 60d.

[0102] Here, as flow path partitions 63, three flow path partitions 63a, 63b, and 63c are provided (see reference). Figure 4The gas flow path 60 is divided into four gas-segmented flow paths: 60a, 60b, 60c, and 60d.

[0103] Each flow path partition 63 has, for example, a plate-like shape and is arranged along the moving direction D1 with its thickness direction in mind. Flow path partitions 63a, 63b, and 63c are arranged sequentially from one side to the other in the moving direction D1. The upper end face of each flow path partition 63 is connected to the lower surface of the upper surface portion 61, and the two end faces of the flow path partition 63 are connected to the inner surface of the side wall portion 62.

[0104] In the example shown, gas-splitting flow paths 60a, 60b, 60c, and 60d are sequentially formed in the moving direction D1 through three flow path partitions 63a, 63b, and 63c.

[0105] Figure 4 In this example, a through hole 631 is formed in the flow path partition 63b for the processing liquid nozzle 4 to pass through. Therefore, gas-splitting flow paths 60a and 60b are located on one side of the movement direction D1 relative to the processing liquid nozzle 4, and gas-splitting flow paths 60c and 60d are located on the other side of the movement direction D1 relative to the processing liquid nozzle 4. That is, gas flow paths 60 are formed on both sides of the processing liquid nozzle 4 in the movement direction D1.

[0106] Gas splitting flow paths 60b and 60c are formed closer to the processing liquid nozzle 4 in the moving direction D1, while gas splitting flow paths 60a and 60d are formed further away from the processing liquid nozzle 4 in the moving direction D1. In other words, the distance between gas splitting flow paths 60b and 60c and the processing liquid nozzle 4 is shorter than the distance between gas splitting flow paths 60a and 60d and the processing liquid nozzle 4.

[0107] Figure 3 In the example, inlet 611a, inlet 611b, inlet 611c and inlet 611d are formed on the upper surface portion 61 as inlet 611 connected to the gas flow path 60.

[0108] Inlet 611a is connected to gas splitting flow path 60a, inlet 611b is connected to gas splitting flow path 60b, inlet 611c is connected to gas splitting flow path 60c, and inlet 611d is connected to gas splitting flow path 60d.

[0109] The gas supply unit 50 supplies gas to the corresponding gas splitting flow path 60a, gas splitting flow path 60b, gas splitting flow path 60c and gas splitting flow path 60d via inlet 611a, inlet 611b, inlet 611c and inlet 611d respectively.

[0110] Figure 3 In the example, the gas supply unit 50 includes gas supply pipes 51a and 51b, and valves 52a and 52b.

[0111] The gas supply pipe 51a includes two branch pipes and a common pipe. One end of each branch pipe is connected to inlet 611a and inlet 611d respectively, and the other end of each branch pipe is connected to one end of the common pipe. The other end of the common pipe is connected to the gas supply source 53. In this way, the gas supply pipe 51a connects inlet 611a and inlet 611d to the gas supply source 53.

[0112] Gas supply pipe 51b also includes two branch pipes and a common pipe, and like gas supply pipe 51a, inlet 611b and inlet 611c are connected to gas supply source 53.

[0113] Valve 52a is installed in the common pipe of gas supply pipe 51a and is controlled by control unit 90. When valve 52a is open, gas from gas supply source 53 flows inside gas supply pipe 51a, flowing into corresponding gas splitting flow paths 60a and 60d via inlet 611a and inlet 611d, respectively. When valve 52a is closed, the gas supply to gas splitting flow paths 60a and 60d stops. Valve 52a can also be a flow regulating valve that can adjust the flow rate of gas flowing inside gas supply pipe 51a. Alternatively, a flow regulating valve separate from valve 52a can also be provided.

[0114] Valve 52b is installed in the common pipe of gas supply pipe 51b and is controlled by control unit 90. When valve 52b is open, gas from gas supply source 53 flows inside gas supply pipe 51b, flowing into corresponding gas splitting flow path 60b and gas splitting flow path 60c via inlet 611b and inlet 611c, respectively. When valve 52b is closed, the gas supply to gas splitting flow path 60b and gas splitting flow path 60c stops. Valve 52b can also be a flow regulating valve that can adjust the flow rate of gas flowing inside gas supply pipe 51b. Alternatively, a flow regulating valve separate from valve 52b can also be provided.

[0115] Using this gas supply unit 50, the flow rate of the gas flowing in the gas splitting flow path 60a and gas splitting flow path 60d, and the flow rate of the gas flowing in the gas splitting flow path 60c and gas splitting flow path 60b can be adjusted individually.

[0116] In other words, the flow rates of the gas in gas-splitting flow paths 60b and 60c, which are close to the processing liquid nozzle 4, can be adjusted independently from the flow rates of the gas in gas-splitting flow paths 60a and 60d, which are farther from the processing liquid nozzle 4. For example, the flow rates of the gas in gas-splitting flow paths 60b and 60c can be adjusted such that the flow rates of the gas in gas-splitting flow paths 60a and 60d are higher than those in gas-splitting flow paths 60a and 60d. The effects of this operation will be described in detail below.

[0117] In addition, although Figure 3 In the example, the gas supply unit 50 generally adjusts the flow rates in gas splitting flow paths 60b and 60c, but it may also have a configuration that allows for independent adjustment of the flow rates in gas splitting flow paths 60b and 60c. The same applies to gas splitting flow paths 60a and 60d.

[0118] Figure 4 In the example, the width of the gas flow path 60 (gas segmentation flow path 60a, gas segmentation flow path 60b, gas segmentation flow path 60c, and gas segmentation flow path 60d) in the direction orthogonal to the movement direction D1 is wider than the width of the nozzle outlet 4a of the processing liquid nozzle 4, for example, by more than the radius of the substrate W, and more ideally by more than the diameter of the substrate W. Furthermore, due to manufacturing variations, the width of the gas flow path 60 may sometimes vary depending on its position in the movement direction D1. In this case, it is sufficient to ensure that the maximum width of the gas flow path 60 is wider than the width of the nozzle outlet 4a of the processing liquid nozzle 4, for example, by more than the radius of the substrate W, and more ideally by more than the diameter of the substrate W. Therefore, the plasma generation unit 5 can supply gas to the upper surface of the substrate W over a wider area when viewed from above. That is, the gas can be supplied to the upper surface of the substrate W more uniformly.

[0119] In the illustrated example, the unit body 6 also includes a plate-shaped body 64. The plate-shaped body 64 is disposed within the gas flow path 60. Specifically, the plate-shaped body 64 is disposed upstream of the gas flow relative to the electrode group 7, and is positioned vertically opposite to the electrode group 7.

[0120] The plate-shaped body 64 has a plate-like shape and is arranged in a vertical orientation with its thickness direction. Multiple openings 641 are formed in the plate-shaped body 64, through which gas flows toward the electrode group 7.

[0121] Here, plate-shaped body 64a and plate-shaped body 64b are provided as plate-shaped body 64.

[0122] The plate-shaped body 64a is provided corresponding to the gas splitting flow path 60a and the gas splitting flow path 60b. Figure 3In this example, the lower end of the flow path partition 63a is connected to the upper surface of the plate-shaped body 64a. In addition, the periphery of the plate-shaped body 64a is connected to the side wall portion 62 and the flow path partition 63b.

[0123] The plate-shaped body 64b is provided corresponding to the gas splitting flow path 60c and the gas splitting flow path 60d. Figure 3 In this example, the lower end of the flow path partition 63c is connected to the upper surface of the plate-shaped body 64b. Furthermore, the periphery of the plate-shaped body 64b is connected to the side wall portion 62 and the flow path partition 63b.

[0124] Multiple openings 641 penetrate the plate-like body 64 in the vertical direction, and have a circular shape when viewed from above. The multiple openings 641 are arranged in two dimensions when viewed from above, for example, in a matrix arrangement.

[0125] The gas flowing in each of the gas splitting flow paths 60a and 60b flows toward the electrode group 7a through multiple openings 641 of the plate-shaped body 64a.

[0126] The gas flowing in each of the gas splitting flow paths 60c and 60d flows toward the electrode group 7b through multiple openings 641 of the plate-shaped body 64b.

[0127] In this way, by allowing the gas to flow uniformly toward the electrode group 7 through multiple openings 641, the gas uniformity can be achieved. If the distance between the plate 64 and the electrode group 7 becomes longer, the gas uniformity may decrease, so this distance should be set with gas uniformity in mind.

[0128] <About Electrode Groups>

[0129] The electrode group 7 is disposed downstream of the gas flow path 60 as described above, and is located in the region overlapping with the gas flow path 60 when viewed from above. When gas passes through the electrode group 7, the electrode group 7 applies an electric field to the gas. As a result, a portion of the gas is ionized to generate plasma.

[0130] Figure 3 In the example, electrode group 7a and electrode group 7b are provided as electrode group 7. Figure 3 In the example, electrode group 7a is located further downstream than gas splitting flow path 60a and gas splitting flow path 60b, and electrode group 7b is located further downstream than gas splitting flow path 60c and gas splitting flow path 60d.

[0131] Electrode group 7a faces gas segmentation flow paths 60a and 60b in the vertical direction, and electrode group 7b faces gas segmentation flow paths 60c and 60d in the vertical direction. That is, Figure 3In the example shown, electrode groups 7a and 7b are positioned on opposite sides of the processing liquid nozzle 4, separated by the nozzle head 3 in the moving direction D1. In summary, electrode groups 7 are positioned adjacent to the processing liquid nozzle 4 in the moving direction D1; in the illustrated example, they are positioned on both sides of the processing liquid nozzle 4 in the moving direction D1.

[0132] Figure 5 and Figure 6 This is a diagram that roughly represents an example of the configuration of electrode group 7. Figure 5 This is a top view showing an example of the configuration of electrode group 7. Figure 6 Is with Figure 5 The sectional view corresponding to section C-C'. See below for reference. Figure 5 and Figure 6 Electrode group 7 will be described.

[0133] The electrode group 7 has multiple electrodes 71. The multiple electrodes 71 are formed of a conductive material such as metal and are arranged at intervals when viewed from above, in a position that does not overlap with the treatment liquid nozzle 4. Figure 5 In this example, each electrode 71 has a long strip shape in the horizontal direction. The term "strip shape" here refers to the length direction of the electrode 71. Figure 5 The shape whose dimension in the Y-axis direction is longer than its dimension in the horizontal direction orthogonal to its length direction. In the illustrated example, multiple electrodes 71 are arranged in an orientation in which their length direction is orthogonal to the direction of movement D1.

[0134] Multiple electrodes 71 are arranged at intervals in a horizontal alignment direction (here, the direction of movement D1) orthogonal to their length direction. In the illustrated example, four electrodes 71a, 71b, 71c, and 71d are shown as multiple electrodes 71. Electrodes 71a, 71b, 71c, and 71d are arranged sequentially from one side of their alignment direction to the other. Electrodes 71a, 71b, 71c, and 71d are arranged, for example, in the same plane.

[0135] A potential with different polarities is applied to two adjacent electrodes 71. Figure 5 In the example, electrodes 71a and 71c, which are arranged in odd-numbered positions starting from one side of the arrangement direction, are connected to the output terminal 81 of the power supply 80, and electrodes 71b and 71d, which are arranged in even-numbered positions, are connected to the output terminal 82 of the power supply 80.

[0136] Figure 5 In this example, the ends of electrodes 71a and 71c on one side of the length direction are connected to each other via a connecting portion 711a. The connecting portion 711a has, for example, a plate shape, and is integrally formed of the same material as electrodes 71a and 71c.

[0137] The ends of electrodes 71b and 71d on the opposite side of their length direction are connected to each other via a connecting portion 711b. The connecting portion 711b has, for example, a plate shape, and is integrally formed of the same material as electrodes 71b and 71d.

[0138] Thus, the multiple electrodes 71 are arranged in a comb-like pattern. The connecting part 711a is connected to the output terminal 81 of the power supply 80 via a lead wire, and the connecting part 711b is connected to the output terminal 82 of the power supply 80 via a lead wire.

[0139] The power supply 80 includes, for example, a switching power supply circuit (e.g., an inverter circuit) and is controlled by the control unit 90. The power supply 80 applies a voltage (e.g., a high-frequency voltage) between the output terminal 81 and the output terminal 82. As a result, an electric field is generated in the space (electric field space) between the plurality of electrodes 71.

[0140] Electrode group 7 is located downstream of gas flow path 60, so the gas flowing along gas flow path 60 passes through the electric field space between the multiple electrodes 71. When the gas passes through the electric field space, the electric field acts on the gas, and a portion of the gas is ionized to generate plasma. When the plasma is generated, various active species are produced, which move along the gas flow toward the upper surface of substrate W (plasma treatment).

[0141] The distance between the electrode group 7 and the substrate W is set to a distance that will not cause arcing between the electrode group 7 and the substrate W. For example, the distance between the electrode group 7 and the substrate W is set to be more than 2 mm and less than 5 mm.

[0142] The width of electrode group 7 in the direction orthogonal to the moving direction D1 (here, the length of electrode 71 in the longitudinal direction) is wider than the width of the nozzle 4a of the treatment liquid nozzle 4 (refer to...). Figure 5 For example, the radius of the substrate W is greater than that of the substrate W, and more ideally, the diameter of the substrate W is greater than that of the substrate W. Therefore, plasma can be generated over a larger area relative to the substrate W when viewed from above, and active species can be supplied to the upper surface of the substrate W over a larger area.

[0143] Furthermore, the shape of the electrode group is not limited to Figure 5 and Figure 6 The comb-like shape illustrated can also be, for example, an electrode pair arranged spatially across an electric field when viewed from above, and can also... Figure 5 and Figure 6 The illustrated polar electrodes are arranged in the Z direction with a plate-shaped dielectric material between them, thereby generating an electric field space along the surface of the plate-shaped dielectric material.

[0144] <About Dielectric Protection Components>

[0145] In the illustrated example, each electrode 71 is covered by a dielectric protection component 72. The dielectric protection component 72 is formed of an insulator (dielectric) such as quartz or ceramic, and covers the surface of the electrode 71. For example, the dielectric protection component 72 is in close contact with the surface of the electrode 71. The dielectric protection component 72 may also be a dielectric film formed on the surface of the electrode 71. The dielectric protection component 72 protects the electrode 71 from the effects of plasma.

[0146] Figure 6 In the example, each electrode 71 has a circular cross-section, and each dielectric protection component 72 has an annular cross-section.

[0147] <Regarding dielectric separator components>

[0148] In the illustrated example, a dielectric separator 73 is disposed between adjacent electrodes 71. Specifically, the dielectric separator 73 is disposed between every two of the plurality of electrodes 71. The dielectric separator 73 is formed, for example, of an insulator (dielectric) such as quartz or ceramic, and is disposed at intervals from each electrode 71. The dielectric separator 73 has, for example, a plate-like shape, and is disposed with its thickness direction along the arrangement direction of the electrodes 71 (here, the moving direction D1). The upper surface of the dielectric separator 73 has, for example, a rectangular shape that is longer in the length direction of the electrodes 71.

[0149] Figure 6 In this example, the upper end of the dielectric separator 73 is located slightly above the upper end of the electrode 71, and the lower end of the dielectric separator 73 is located slightly below the lower end of the electrode 71. If manufacturing deviations are also considered, for example, the lowest upper position among the plurality of dielectric separators 73 may be set higher than the highest upper position among the plurality of electrodes 71, and the highest lower position among the plurality of dielectric separators 73 may be set lower than the lowest lower position among the plurality of electrodes 71.

[0150] If such a dielectric separator 73 is provided, the insulation distance between the multiple electrodes 71 can be extended. As a result, while increasing the voltage of the multiple electrodes 71 to generate plasma more efficiently, arc discharge between the multiple electrodes 71 can also be suppressed.

[0151] <About the frame>

[0152] Figure 5 In this example, the dielectric separator 73 is connected to the frame 74. The frame 74 is formed of an insulator (dielectric) such as quartz or ceramic, and has, for example, a square ring shape when viewed from above.

[0153] The frame 74 surrounds a plurality of dielectric separators 73 when viewed from above, with the two ends of each dielectric separator 73 connected to the inner surface of the frame 74 along its length.

[0154] The frame 74 also roughly surrounds multiple electrodes 71. Figure 5 In the example, the connecting portions 711a and 711b are located outside the frame 74. The electrodes 71a and 71c penetrate the frame 74 on one side of their length direction and are connected to the connecting portion 711a, while the electrodes 71b and 71c penetrate the frame 74 on the other side of their length direction and are connected to the connecting portion 711b.

[0155] Figure 5 In this example, most of the electrode 71 is located inside the frame 74, and the electric field space is formed inside the frame 74 when viewed from above. The frame 74 is, for example, connected to the lower end of the side wall portion 62 of the unit body 6.

[0156] Gas passes through the electrode group 7 within the frame 74. Specifically, the gas flows downward through the space between multiple electrodes 71 and multiple dielectric separators 73. If an electric field generated in the electric field space between the multiple electrodes 71 acts on the gas, a portion of the gas is ionized to generate plasma. Various active species are generated during the plasma generation. These active species move downward with the gas flow and flow out toward the upper surface of the substrate W (plasma treatment).

[0157] As described above, the nozzle head 3, using the processing liquid nozzle 4 and the plasma generation unit 5, can supply processing liquid and gas to the upper surface of the substrate W.

[0158] <Regarding the actions of the processing unit>

[0159] Next, an example of the operation of the processing unit 600 in the substrate processing apparatus will be described. Figure 7 This is a flowchart illustrating an example of the actions of the processing unit 600.

[0160] First, the untreated substrate W is moved into the processing unit 600 by the central robot 603 (step ST1). Here, a photoresist is formed on the upper surface of the substrate W. The substrate holding part 2 of the processing unit 600 holds the moved substrate W.

[0161] Next, the substrate holding part 2 begins to rotate the substrate W about the rotation axis Q1 (step ST2).

[0162] Next, the liquid treatment is performed (step ST3). Specifically, first, the head moving mechanism 30 moves the nozzle head 3 from the standby position to the processing position. Then, valves 46, 52a, and 52b are opened, the power supply 80 applies voltage to the electrode 71, and the head moving mechanism 30 moves the nozzle head 3 back and forth along the moving direction D1 (so-called scanning processing). For example, the head moving mechanism 30 moves the nozzle head 3 back and forth between the first peripheral position and the second peripheral position.

[0163] When valve 46 is opened, a treatment liquid (such as sulfuric acid) is sprayed from the nozzle 4a of the treatment liquid nozzle 4 toward the upper surface of the substrate W. The liquid adhering to the upper surface of the rotating substrate W flows radially outward along the upper surface of the substrate W and scatters outward from the periphery of the substrate W.

[0164] Additionally, when valves 52a and 52b are opened, gas (a mixture of oxygen-containing gas and rare gases) is supplied from the gas supply unit 50 to the gas flow path 60 via inlet 611. More specifically, the gas flows into the corresponding gas splitting flow paths 60a, 60b, 60c, and 60d via inlets 611a, 611b, 611c, and 611d, respectively.

[0165] Here, gas is supplied at a first flow rate to gas splitting flow path 60a and gas splitting flow path 60d that are far from the processing liquid nozzle 4, and gas is supplied at a second flow rate that is greater than the first flow rate to gas splitting flow path 60b and gas splitting flow path 60c that are close to the processing liquid nozzle 4.

[0166] In gas-splitting flow paths 60a and 60b, the downward-flowing gas passes through multiple openings 641 in the plate-shaped body 64a. This rectifys the gas flow, making it more uniformly directed towards the electrode group 7a. Similarly, in gas-splitting flow paths 60c and 60d, the downward-flowing gas passes through multiple openings 641 in the plate-shaped body 64b. This also rectifyes the gas flow, making it more uniformly directed towards the electrode group 7b.

[0167] Power supply 80 applies a voltage to electrode 71, thus generating an electric field in the electric field space between electrodes 71 in electrode groups 7a and 7b. When gas passes through the electric field space, the electric field acts on the gas, causing a portion of the gas to ionize and generate plasma. During the generation of this plasma, various reactions occur due to electron collisions, including the dissociation and excitation of molecules and atoms, and various reactive species (e.g., oxygen radicals) such as highly reactive neutral free radicals are generated. For example, argon gas is plasmaified by the electric field, and this plasma acts on oxygen-containing gas to generate oxygen radicals. These reactive species (e.g., oxygen radicals) move along the gas flow and flow out toward the upper surface of substrate W (plasma treatment).

[0168] The active species acts on the chemical solution on the upper surface of the substrate W. For example, if oxygen free radicals act on sulfuric acid on the upper surface of the substrate W, peroxymonosulfuric acid (caro's acid) will be generated under the oxidizing power of the oxygen free radicals. Here, when using a treatment solution containing sulfuric acid, regarding the concentration of sulfuric acid, a higher concentration is expected to result in a higher peeling force, for example, preferably in the range of 94% or more and 98% or less, and the closer to 98%, the more preferred. Caro's acid can effectively remove the resist from the upper surface of the substrate W. In other words, the action of the active species on the chemical solution improves the treatment capacity of the solution.

[0169] The active species can act not only on the solution on the upper surface of the substrate W, but also directly on the substrate W. For example, the resist on the substrate W can be removed by the oxidizing power of the oxygen free radicals, which can act directly on the resist.

[0170] If the resist on the substrate W is sufficiently removed, valves 46, 52a, and 52b close, and power supply 80 stops outputting voltage. This stops the ejection of the chemical solution from the processing liquid nozzle 4 and the outflow of gas from the plasma generation unit 5. Furthermore, the head moving mechanism 30 stops the reciprocating movement of the nozzle head 3. Thus, the actual chemical solution treatment (here, resist removal treatment) ends.

[0171] Next, a rinsing process is performed (step ST4). Specifically, for example, the head moving mechanism 30 moves the nozzle head 3 so that the processing liquid nozzle 4 faces the center of the substrate W, and the processing unit 600 sprays rinsing liquid from the processing liquid nozzle 4 toward the upper surface of the substrate W. As a result, the liquid on the upper surface of the substrate W is replaced with rinsing liquid. In addition, the head moving mechanism 30 may also move the nozzle head 3 back and forth during this rinsing process (so-called scanning process).

[0172] If the liquid on the upper surface of the substrate W is sufficiently replaced by rinsing liquid, the rinsing liquid ejection from the processing liquid nozzle 4 is stopped, and the head moving mechanism 30 moves the nozzle head 3 to the standby position.

[0173] Here, as described in detail below, plasma treatment using the nozzle head 3 is implemented with a first supply setting and a second supply setting. The first supply setting supplies the drug solution in such a way that the thickness of the liquid film located below the nozzle head 3 is a first thickness (e.g., 0.1 mm or more and less than 0.25 mm). The second supply setting supplies the drug solution in such a way that the thickness of the liquid film formed on the upper surface of the substrate W is a second thickness (e.g., 0.35 mm or more and less than 2 mm) that is greater than the first thickness.

[0174] These two plasma treatments can be performed consecutively in step ST3. Alternatively, one plasma treatment can be performed in step ST3 followed by a rinsing process (step ST4), and then the process can be repeated in step ST3 for the other plasma treatment followed by a rinsing process (step ST4).

[0175] Next, a drying process is performed (step ST5). For example, the substrate holding part 2 increases the rotational speed of the substrate W. As a result, the rinsing liquid on the upper surface of the substrate W is thrown off from the periphery of the substrate W, thereby drying the substrate W (so-called rotary drying).

[0176] If the substrate W is dry, the substrate holding section 2 stops the rotation of the substrate W (step ST6). Then, the processed substrate W is removed from the processing unit 600 by the central robot 603 (step ST7).

[0177] <Specific methods for treating the medicine solution>

[0178] As described above, in this embodiment, a resist pattern is formed on the upper surface of a substrate W, such as a semiconductor wafer. This resist may also use a highly doped resist (e.g., an ion implantation amount of 1 × 10⁻⁶ for As). 15 [ / cm 2 Highly doped resists (such as ] etc.

[0179] Here, the resist pattern formed on the upper surface of the substrate W has varying density. In areas with denser patterns, the shape of the hardened layer formed along the pattern on the upper surface of the resist tends to become more complex.

[0180] According to the inventors' experiments, it is known that when the solution of the active species is supplied to the upper surface of the substrate W, the amount of resist removed varies depending on the thickness of the liquid film formed by the resist covering the upper surface of the substrate W.

[0181] Specifically, when the pattern density of the resist formed on the upper surface of the substrate W is relatively high, a relatively small liquid film thickness of the solution will result in a larger amount of resist removal. On the other hand, when the pattern density of the resist formed on the upper surface of the substrate W is relatively low, a relatively large liquid film thickness of the solution will result in a larger amount of resist removal.

[0182] Regarding the above, it can be considered that when the pattern density of the resist formed on the upper surface of the substrate W is relatively high, if the liquid film thickness of the solution is small, the active species in the liquid film will efficiently reach the hardened layer and the fine gaps of the resist formed into complex shapes, resulting in a larger amount of resist removal.

[0183] On the other hand, it can be considered that if the pattern density of the resist formed on the surface of the substrate W is relatively low, and the liquid film thickness of the solution is large, the amount of solution that dissolves the resist will increase, resulting in a greater amount of resist removal.

[0184] In view of the above, in the drug solution processing of this embodiment, a first supply setting and a second supply setting are respectively provided. The first supply setting supplies the drug solution in such a way that the thickness of the liquid film formed on the upper surface of the substrate W is a first thickness (for example, 0.1 mm or more and less than 0.25 mm). The second supply setting supplies the drug solution in such a way that the thickness of the liquid film formed on the upper surface of the substrate W is a second thickness (for example, 0.35 mm or more and less than 2 mm), which is greater than the first thickness. In each supply setting, the control unit 90 adjusts the supply of the processing liquid from the processing liquid supply source 47 (see reference 47) so that the thickness of the liquid film to be formed is the first thickness or the second thickness. Figure 3 The amount of liquid medicine supplied, the rotation speed of the substrate W, etc.

[0185] Furthermore, when the liquid film thickness of the drug solution is a relatively thin first thickness, there are concerns that the thickness of the liquid film may change due to the gas blown into it, or that voids may appear in the liquid film. Therefore, it is ideal that the gas flow rate into gas splitting flow path 60a, gas splitting flow path 60b, gas splitting flow path 60c, and gas splitting flow path 60d is lower than the gas flow rate at the second thickness.

[0186] Furthermore, the thickness of the liquid film formed by the liquid medicine supplied in the first supply setting also includes, for example, the case where the average thickness of the entire liquid film formed on the upper surface of the substrate W is the first thickness. Similarly, the thickness of the liquid film formed by the liquid medicine supplied in the second supply setting also includes, for example, the case where the average thickness of the entire liquid film formed on the upper surface of the substrate W is the second thickness.

[0187] Then, a liquid solution is supplied to the area on the upper surface of the substrate W where the pattern density of the resist is relatively high, in a first supply setting, to form a liquid film with a first thickness.

[0188] On the other hand, in areas where the pattern density of the resist is relatively low, a second supply solution is supplied to form a liquid film with a second thickness.

[0189] Figure 8 This diagram illustrates an example of a liquid film formed on the upper surface of substrate W during drug treatment. (Example:) Figure 8As illustrated, resist 112 and resist 114 are formed on the upper surface of substrate W. The pattern density of resist 112 is relatively high, while the pattern density of resist 114 is relatively low (at least lower than that of resist 112). Here, resist 112 and resist 114 can be formed separately from each other on the upper surface of substrate W, or they can be formed continuously.

[0190] Figure 8 In this case, it is assumed that the solution 116 is sprayed onto the upper surface of the substrate W where at least the resist 112 is formed to form a liquid film 118A, which mainly removes the resist 112.

[0191] In this case, the pattern density of the resist 112 is relatively high, so the solution 116 is supplied with the first supply setting, so that the thickness of the liquid film 118A is small (i.e., becomes the first thickness).

[0192] Additionally, from the gas supply unit 50 (see reference) Figure 3 A gas is supplied, and then plasma is generated from the gas using electrode 71. The active species generated by plasma treatment are then supplied to the liquid film 118A (plasma treatment). The active species act on the liquid, increasing the processing capacity of the liquid (specifically, the ability to remove the resist 112, including the hardened layer formed on the upper surface of the resist 112).

[0193] Figure 9 This is a diagram illustrating an example of a liquid film formed on the upper surface of a substrate W during drug treatment. Figure 9 In this case, it is assumed that the solution 116 is sprayed onto the upper surface of the substrate W where at least the resist 114 is formed to form a liquid film 118B, which mainly removes the resist 114.

[0194] In this case, the pattern density of the resist 114 is relatively low, so the solution 116 is supplied with the second supply setting, so that the thickness of the liquid film 118B is large (i.e., becomes the second thickness).

[0195] Additionally, from the gas supply unit 50 (see reference) Figure 3 A gas is supplied, and then the gas is used to generate plasma using electrode 71. Then, active species generated by plasma treatment are supplied to liquid film 118B (plasma treatment). The active species act on the liquid, which improves the treatment capacity of the liquid (specifically, the ability to remove the resist 114, including the hardened layer formed on the upper surface of the resist 114).

[0196] also, Figure 8 and Figure 9The process can be performed sequentially by moving the nozzle head 3 using the head moving mechanism 30, or multiple nozzle heads 3 can be used simultaneously. That is, after the first supply setting primarily removes the resist 112, the second supply setting primarily removes the resist 114; or after the second supply setting primarily removes the resist 114, the first supply setting primarily removes the resist 112; or the removal of the resist 112 using the first supply setting and the removal of the resist 114 using the second supply setting can be performed simultaneously.

[0197] exist Figure 8 and Figure 9 In the illustrated case, the solution 116 is supplied in a first supply setting to the region where the pattern density of the resist is relatively high (i.e., the region where the resist 112 is formed), thereby forming a liquid film 118A with a first thickness. On the other hand, the solution 116 is supplied in a second supply setting to the region where the pattern density of the resist is relatively low (i.e., the region where the resist 114 is formed), thereby forming a liquid film 118B with a second thickness.

[0198] However, the area where the solution 116 is supplied in the first supply setting and the area where the solution 116 is supplied in the second supply setting are not limited to areas distinguished by the density of the resist pattern. That is, they can also be areas distinguished by a reference different from the resist pattern density (e.g., the distance from the center of the substrate W).

[0199] Alternatively, the area where the medicine liquid 116 is supplied by the first supply setting may overlap at least partially with the area where the medicine liquid 116 is supplied by the second supply setting.

[0200] Figure 10 This is another example of a liquid film formed on the surface of substrate W during drug treatment. (See diagram below.) Figure 10 As illustrated, resist 112 and resist 114 are formed on the upper surface of substrate W. Similarly, resist 112 has a relatively high pattern density, while resist 114 has a relatively low pattern density (at least lower than that of resist 112).

[0201] Figure 10 In this case, it is assumed that the solution 116 is sprayed onto the entire upper surface of the substrate W to form a liquid film 118C, which mainly removes the resist 112. When the liquid film 118C is formed on the entire upper surface of the substrate W, scanning processing can also be performed by moving the nozzle head 3 back and forth through the head moving mechanism 30.

[0202] In this case, the pattern density of the resist 112 is relatively high, so the solution 116 is supplied with the first supply setting, so that the thickness of the liquid film 118C is small (i.e., becomes the first thickness).

[0203] Additionally, from the gas supply unit 50 (see reference) Figure 3 A gas is supplied, and then the gas is used to generate plasma using electrode 71. Then, the active species generated by plasmaization are supplied to liquid film 118C.

[0204] Figure 11 This is another example of a liquid film formed on the upper surface of substrate W during drug treatment. Figure 11 In the case of, assuming that in such a situation Figure 10 As illustrated, after forming a liquid film 118C and performing chemical treatment, a chemical solution 116 is sprayed onto the entire upper surface of the substrate W to form a liquid film 118D, primarily removing the resist 114. When forming the liquid film 118D on the entire upper surface of the substrate W, a scanning process can also be performed by reciprocating the movement of the nozzle head 3 via the head moving mechanism 30.

[0205] In this case, the pattern density of the resist 114 is relatively low, so the solution 116 is supplied with a second supply setting, so that the thickness of the liquid film 118D is large (i.e., becomes the second thickness).

[0206] Additionally, from the gas supply unit 50 (see reference) Figure 3 A gas is supplied, and then the gas is used to generate plasma using electrode 71. Then, the active species generated by plasmaization are supplied to liquid film 118D.

[0207] Figure 10 and Figure 11 The diagram shows the case where both the region where the drug solution 116 is supplied under the first supply setting and the region where the drug solution 116 is supplied under the second supply setting are the entire upper surface of the substrate W. Furthermore, if the region where the drug solution 116 is supplied under the first supply setting and the region where the drug solution 116 is supplied under the second supply setting overlap by at least a portion, then each region may not be the entire upper surface of the substrate W.

[0208] By performing the chemical treatment in the order described above, firstly, active species generated by plasma treatment can be supplied to the liquid film 118C having a first thickness, thereby suppressing damage to the upper surface of the substrate W and efficiently removing the hardened layer on the upper surface of the resist 112 and the upper surface of the resist 114. Next, active species generated by plasma treatment can be supplied to the liquid film 118D having a second thickness, thereby efficiently removing the resist 112 and resist 114 that are partially exposed after the removal of the hardened layer. Furthermore, with the liquid film 118D having a second thickness formed, the flow rate of the chemical solution 116 can be increased to rinse the resist 112 and resist 114, thus suppressing the residue of the resist 112 and resist 114 on the upper surface of the substrate W.

[0209] also, Figure 10 and Figure 11 The order of processing can also be reversed. That is, after forming a liquid film 118D with a second thickness and performing liquid treatment, a liquid film 118C with a first thickness can be formed and then liquid treatment can be performed.

[0210] In addition, in the above embodiment, the plasma generating unit 5 moves in conjunction with the processing liquid nozzle 4, but the plasma generating unit 5 may also be provided independently of the processing liquid nozzle 4 and move separately from the movement of the processing liquid nozzle 4. In this case, plasma processing using the plasma generating unit 5 can also be performed after the processing liquid nozzle 4 moves from the processing position to the standby position.

[0211] In addition, the area covered by the plasma generating unit 5 can be as follows: Figure 3 The area shown corresponds to a portion of the upper surface of substrate W, but it could also correspond to the entire upper surface of substrate W.

[0212] Furthermore, in the processing unit 600, the processing liquid nozzle 4 and the plasma generation unit 5 are arranged adjacent to each other when viewed from above. Therefore, gas from the plasma generation unit 5 is supplied to the processing liquid ejected from the processing liquid nozzle 4 and adhering to the upper surface of the substrate W. As a result, active species can act on the processing liquid on the upper surface of the substrate W.

[0213] Therefore, the processing capacity of the processing solution can be improved on the upper surface of the substrate W. Furthermore, with the improved processing capacity, the processing solution acts on the upper surface of the substrate W, enabling the substrate W to be processed in a shorter time. Additionally, the active species can directly act on the upper surface of the substrate W, thus allowing for the processing of the substrate W in a shorter time.

[0214] Furthermore, in the above example, the multiple electrodes 71 of the electrode group 7 are arranged side by side when viewed from above. For example, multiple electrodes 71 having a long strip shape that is longer in the horizontal direction are arranged side by side with intervals between them in the direction of their short sides (arrangement direction).

[0215] This allows for easy increase in the area of ​​the electrode group 7 when viewed from above. Consequently, plasma can be generated over a wider range when viewed from above, and active species can be supplied to the upper surface of the substrate W over a wider area. Therefore, the substrate W can be processed more uniformly.

[0216] Furthermore, in the above example, the gas flow path 60 and the electrode group 7 are positioned adjacent to the processing liquid nozzle 4 in the moving direction D1 of the nozzle head 3; more specifically, they are positioned on both sides. Thus, active seeds are supplied to the upper surface of the substrate W from both sides of the processing liquid nozzle 4 in the moving direction D1.

[0217] Here, if the area supplied with active seeds when viewed from above is called the outflow area, then outflow areas exist on both sides of the processing liquid nozzle 4. Therefore, during the reciprocating movement of the nozzle head 3, after the processing liquid is ejected from the processing liquid nozzle 4, either outflow area quickly reaches the ejection position. Thus, for processing liquid adhering to the upper surface of the substrate W and not yet activated by active seeds, the active seeds can be activated more rapidly. This shortens the processing time of the substrate W.

[0218] Furthermore, in the above example, a plate-shaped body 64 with multiple openings 641 is disposed on the upstream side relative to the electrode group 7. As a result, gas passes uniformly through the electrode group 7 via the multiple openings 641. Therefore, the gas passes uniformly through the electric field space, uniformly generating plasma. Furthermore, active species can be uniformly generated and uniformly supplied to the upper surface of the substrate W. Therefore, the substrate W can be uniformly processed.

[0219] Furthermore, in the above example, a flow path partition 63 is provided to divide the gas flow path 60 into gas split flow paths 60a, 60b, 60c, and 60d in the moving direction D1. This allows for adjustment of the gas flow rates in gas split flow paths 60a, 60b, 60c, and 60d. For example, the flow rates in gas split flow paths 60a, 60b, 60c, and 60d can be adjusted such that the gas flow velocity in gas split flow paths 60b and 60c, which are closer to the processing liquid nozzle 4, is higher than the gas flow velocity in gas split flow paths 60a and 60d, which are farther from the processing liquid nozzle 4.

[0220] Furthermore, it is known that reactive species such as oxygen free radicals deactivate within a short time. Therefore, the lower the gas flow rate, the higher the likelihood that reactive species will deactivate before reaching the upper surface of the substrate W. As mentioned above, the higher the gas flow rate in gas segmentation flow paths 60b and 60c, the more reactive species can reach the upper surface of the substrate W near the processing liquid nozzle 4. On the other hand, since the gas flow rate in gas segmentation flow paths 60a and 60d is relatively low, fewer reactive species reach the upper surface of the substrate W at locations farther from the processing liquid nozzle 4.

[0221] Therefore, for the processing liquid ejected from the processing liquid nozzle 4 and adhering to the upper surface of the substrate W near the processing liquid nozzle 4, more active species can exert their effects. On the other hand, for the processing liquid that has already been supplied with active species near the processing liquid nozzle 4, fewer active species can exert their effects in the upper surface of the substrate W away from the processing liquid nozzle 4.

[0222] In this way, by adjusting the amount of active species applied according to the distance from the processing liquid nozzle 4, the substrate W can be uniformly processed using the processing liquid. Furthermore, compared to the case where gas is supplied at a higher flow rate in all gas separation flow paths 60a, 60b, 60c, and 60d, gas consumption can be reduced.

[0223] Furthermore, in the above example, a dielectric separator 73 is provided between the electrodes 71. This allows for the promotion of plasma generation by increasing the voltage applied to the electrodes 71 while simultaneously suppressing arc discharge between the electrodes 71.

[0224] <Second Implementation>

[0225] Figure 12 This is a side view schematically illustrating an example of the configuration of the nozzle head 300 according to the second embodiment. Additionally, Figure 13 This is a top view that schematically illustrates an example of the configuration of the nozzle head 300 in the second embodiment. Figure 13 Equivalent to along Figure 12 A partial sectional view of line XIII-XIII.

[0226] Furthermore, in the second embodiment, configurations common to those in the first embodiment are respectively labeled with the same meaning. Figures 1 to 11 The same reference symbols are used in the same cases, and detailed explanations are omitted.

[0227] The main difference between the second embodiment and the first embodiment is that, in the first embodiment, the gas supplied from the gas supply source 53 is blown to the electrode group 7 (electrode group 7a, electrode group 7b) via gas splitting flow path 60a, gas splitting flow path 60b, gas splitting flow path 60c and gas splitting flow path 60d in the nozzle head 3. In contrast, in the second embodiment, no gas splitting flow path is provided above the electrode group 700.

[0228] That is, in the second embodiment, the nozzle head 300 has a treatment liquid nozzle 400 and an electrode group 700 disposed adjacent to the treatment liquid nozzle 400.

[0229] The electrode group 700 includes a plasma source 800 and an AC power supply 40. The plasma source 800 has a dielectric layer 803, electrodes 802 and 804. In addition, the plasma source 800 preferably has an insulating coating portion 801 and an insulating coating portion 805.

[0230] The dielectric layer 803 has a lower surface and an upper surface facing the liquid film. Electrode 802 is disposed separately from the liquid film on the lower surface. Electrode 804 is disposed on the upper surface. Figure 13As shown, electrodes 802 and 804 are preferably a pair of interlocking comb-tooth electrodes arranged in a planar layout parallel to the dielectric layer 803. An insulating coating 801 covers electrode 802 in a manner that separates the space where plasma PL is generated from electrode 802. An insulating coating 805 covers electrode 804 in a manner that separates the space where plasma PL is generated from electrode 804.

[0231] Then, the gas supplied from the gas supply source 53 is not blown toward the electrode group 700, but is supplied in a manner that fills the interior of the processing unit 600 on which the substrate W is placed. In order to efficiently fill the interior of the processing unit 600 with gas, the processing unit 600 is ideally covered by a shielding plate (not shown) in a manner that covers the substrate W and the nozzle head 300.

[0232] The processing liquid nozzle 400 and the electrode group 700 can move between a processing position and a retraction position on the substrate W via the head moving mechanism 30. Alternatively, the processing liquid nozzle 400 and the electrode group 700 can be configured to move on the substrate W using separate moving mechanisms.

[0233] In the second embodiment, unlike the first embodiment, gas is not blown towards the liquid film on the substrate W. Therefore, it can suppress phenomena such as thickness variations in the liquid film caused by gas blowing, or the formation of voids in the liquid film. The configuration of the second embodiment is ideal when the liquid film thickness is very thin, or when subtle variations in the liquid film would be problematic.

[0234] In the configuration of the second embodiment, unlike the first embodiment, the active species generated by the plasma generated near the electrode group 700 will not move due to gas blowing. Therefore, regarding the distance between the electrode group 700 and the liquid film on the substrate W, it is ideal to arrange them as close as possible within a range where corona discharge will not occur between the substrate W and the electrode group 700.

[0235] <Examples of variations of the implementation methods described above>

[0236] In the embodiments described above, there are also descriptions of the material, size, shape, relative configuration relationship or implementation conditions of each constituent element, but these descriptions are only one example among all the forms, and are not limiting descriptions.

[0237] Therefore, within the scope of the technology disclosed in this specification, numerous variations and equivalents not illustrated can be conceived. These include, for example, cases where at least one constituent element is changed, at least one constituent element is added, or at least one constituent element is omitted.

[0238] Furthermore, in the embodiments described above, unless the material name is specifically specified, the material may contain other additives, such as alloys, to the extent that no contradiction arises.

[0239] [Explanation of Symbols]

[0240] 1 Substrate processing apparatus

[0241] 2 Substrate holding section

[0242] 3,300 nozzle heads

[0243] 4,400 processing fluid nozzle

[0244] 4a Spray outlet

[0245] 4b Processing fluid flow path

[0246] 4c has an opening at the top.

[0247] 5 Plasma Generation Unit

[0248] 6-unit body

[0249] Electrode groups 7, 7a, 7b, 700

[0250] 8. Cup

[0251] 21 Base

[0252] 22 Chucks

[0253] 23 Rotating mechanism

[0254] 30-head moving mechanism

[0255] 40 AC power supply

[0256] 45. Processing fluid supply pipe

[0257] 46, 52a, 52b valves

[0258] 47. Processing fluid supply source

[0259] 50 Gas Supply Department

[0260] 51a, 51b Gas supply pipes

[0261] 53 Gas supply source

[0262] 60 Gas Flow Path

[0263] 60a, 60b, 60c, 60d Gas-divided flow paths

[0264] 61 upper surface

[0265] 61a, 631 Through holes

[0266] 62 Side wall portion

[0267] 63, 63a, 63b, 63c Flow path separation section

[0268] 64,64a,64b plate-shaped body

[0269] Electrodes 71, 71a, 71b, 71c, 71d, 802, 804

[0270] 72 Dielectric protection components

[0271] 73 Dielectric separator components

[0272] 74 Frame

[0273] 80 power supply

[0274] 81,82 Output terminals

[0275] 90 Control Department

[0276] 91 CPU

[0277] 92 ROM

[0278] 93 RAM

[0279] 94 Storage devices

[0280] 94P Processor

[0281] 95 bus

[0282] 96 Input Section

[0283] 97 Display Department

[0284] 98 Ministry of Communications

[0285] 112, 114 Corrosion Resist

[0286] 116 Liquid Medicine

[0287] 118A, 118B, 118C, 118D liquid film

[0288] 180 chambers

[0289] 231 motor

[0290] 232 axis

[0291] 600 processing units

[0292] 601 Load Port

[0293] 602 Transfer and Conveying Robot

[0294] 603 Center Robot

[0295] 604 substrate mounting section

[0296] 611, 611a, 611b, 611c, 611d Flow Inlets

[0297] 641 Opening

[0298] 711a, 711b Connecting parts

[0299] 800 plasma source

[0300] 801, 805 Insulation Covering

[0301] 803 dielectric layer.

Claims

1. A substrate processing method for removing resist from an upper surface of a substrate, comprising the steps of: supplying a processing liquid to the upper surface of the substrate; making a liquid film thickness of the processing liquid formed on at least a part of the upper surface of the substrate a first thickness, and performing plasma treatment on the liquid film under atmospheric pressure; and making a liquid film thickness of the processing liquid formed on at least a part of the upper surface of the substrate a second thickness, and performing plasma treatment on the liquid film under atmospheric pressure; and the first thickness is smaller than the second thickness.

2. The substrate processing method according to claim 1, wherein the step of performing plasma treatment on the liquid film having the first thickness is a step performed in a first region in the upper surface of the substrate, and the step of performing plasma treatment on the liquid film having the second thickness is a step performed in a second region in the upper surface of the substrate, the second region being different from the first region.

3. A substrate processing method for removing resist from an upper surface of a substrate, comprising the steps of: supplying a processing liquid to the upper surface of the substrate; making a liquid film thickness of the processing liquid formed on at least a part of the upper surface of the substrate a first thickness, and performing plasma treatment on the liquid film under atmospheric pressure; and making a liquid film thickness of the processing liquid formed on at least a part of the upper surface of the substrate a second thickness, and performing plasma treatment on the liquid film under atmospheric pressure; and the first thickness is smaller than the second thickness.

2. The substrate processing method according to claim 1, wherein the step of performing plasma treatment on the liquid film having the first thickness is a step performed in a first region in the upper surface of the substrate, and the step of performing plasma treatment on the liquid film having the second thickness is a step performed in a second region in the upper surface of the substrate, the second region being different from the first region.

3. The substrate processing method according to claim 1 or 2, wherein a pattern density of the resist formed in the first region is higher than a pattern density of the resist formed in the second region.

4. The substrate processing method according to claim 1 or 3, wherein the processing liquid contains sulfuric acid.

5. The substrate processing method according to claim 3, wherein the first thickness is 0.1 mm or more and less than 0.25 mm, and the second thickness is 0.35 mm or more and 2 mm or less.

6. The substrate processing method according to claim 1 or 3, wherein the step of performing plasma treatment on the liquid film having the first thickness is a step performed in a first region in the upper surface of the substrate, the step of performing plasma treatment on the liquid film having the second thickness is a step performed in a second region in the upper surface of the substrate, and the first region at least partly overlaps the second region.

7. The substrate processing method according to claim 6, wherein the first thickness is 0.1 mm or more and less than 0.25 mm, and the second thickness is 0.35 mm or more and 2 mm or less. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The first region and the second region are the entirety of the upper surface of the substrate.

8. The substrate processing method according to claim 1 or 3, wherein The process of plasma processing the liquid film having the second thickness is performed after the process of plasma processing the liquid film having the first thickness is performed.

9. The substrate processing method according to claim 1 or 3, wherein The process of plasma processing the liquid film having the first thickness is performed after the process of plasma processing the liquid film having the second thickness is performed.

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