A method and apparatus for removing wafer back seals

Abstract

Embodiments of the present disclosure provide a method and device for removing a wafer back seal for removing a film layer on a first surface of a wafer, the film layer including a polysilicon film layer, the method for removing the wafer back seal comprising: providing a first solution to a first region of the polysilicon film layer, the first region being an annular range of 40% to 50% of a radius dimension of the wafer; and providing the first solution to a second region of the polysilicon film layer, the second region being an annular range of 3% to 5% of the radius dimension of the wafer. Using the method and device for removing the wafer back seal provided by embodiments of the present disclosure, the wafer back seal can be removed without residue and defects.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing, and in particular to a method and apparatus for removing back seals from a wafer. Background Technology

[0002] Wafer back sealing is a common process in wafer manufacturing. The usual practice is to use chemical vapor deposition to deposit different films on the wafer, such as depositing oxide films, polysilicon films, and oxide films. Multiple films are deposited on both the front and back sides of the wafer to achieve back sealing. The front film needs to be removed, leaving only the back film.

[0003] The front-side film is typically removed using chemical mechanical polishing (CMP) or wet processing, leaving the back-side film to protect the wafer. CMP removal of the front-side film is prone to defects. Wet processing of the front-side film can leave residues that can cause defects during subsequent oxide film removal.

[0004] Therefore, a method for removing the film layer on the back side of the wafer is needed. Summary of the Invention

[0005] Embodiments of this disclosure provide a method and apparatus for removing the back seal of a wafer.

[0006] Embodiments of this disclosure provide a method for removing a wafer back seal, used to remove a film layer on a first surface of a wafer, the film layer including a polysilicon film layer, the method comprising: providing a first solution in a first region of the polysilicon film layer, the first region being an annular range of 40% to 50% of the wafer radius; and providing the first solution in a second region of the polysilicon film layer, the second region being an annular range of 3% to 5% of the wafer radius.

[0007] In some embodiments, when the first solution is provided in a first region of the polycrystalline silicon film layer by a first spray to remove the wafer back seal, the wafer is rotated at a speed of 1500 to 2000 rpm.

[0008] In some embodiments, the first spray moving speed is 100-140 mm / s, and the first spray flow rate is 1400-1600 mL / min.

[0009] In some embodiments, when the first solution is provided in the second region of the polycrystalline silicon film layer via a second spray to remove the wafer back seal, the wafer is rotated at a speed of 1500 to 2000 rpm.

[0010] In some embodiments, the second spray moving speed is 5-30 mm / s, and the second spray flow rate is 1400-1600 mL / min.

[0011] In some embodiments, the ratio of the operation time for providing the first solution in the first region of the polycrystalline silicon film to the operation time for providing the first solution in the second region of the polycrystalline silicon film is 2:1 to 4:1.

[0012] In some embodiments, the thickness of the polycrystalline silicon film is

[0013] In some embodiments, the method for removing the wafer back seal further includes: after providing a first solution to a first region and a second region of the polysilicon film layer, providing a second solution and a third solution to the film layer on the first surface of the wafer in sequence, so as to remove the residue generated during the removal of the polysilicon film layer.

[0014] In some embodiments, the second solution is provided to the film layer on the first surface of the wafer via a third spray, during which the wafer rotates at a speed of 1000 to 1600 rpm.

[0015] In some embodiments, the third spray moving speed is 80-120 mm / s, the third spray flow rate is 1700-1900 mL / min, and the third spray range is 45%-66% of the wafer radius.

[0016] In some embodiments, a third solution is provided to the film layer on the first surface of the wafer via a fourth spray, wherein the wafer rotates at a speed of 100 to 1600 rpm during the fourth spray.

[0017] In some embodiments, the fourth spray moving speed is 80-120 mm / s, the fourth spray flow rate is 1700-1900 mL / min, and the fourth spray range is 45%-66% of the wafer radius.

[0018] In some embodiments, the second solution is a diluted hydrofluoric acid solution, wherein the component ratio of the diluted hydrofluoric acid solution is HF:H2O = 1:70-90.

[0019] In some embodiments, the film layer further includes: a first oxide film layer located above the polycrystalline silicon film layer; the method for removing the wafer back seal further includes: providing a fourth solution on the surface of the first oxide film layer to remove the first oxide film layer.

[0020] In some embodiments, the thickness of the first oxide film layer is The fourth solution is a 49% hydrofluoric acid solution, and the fourth solution is provided over a period of 5 to 15 seconds.

[0021] In some embodiments, the film layer further includes a second oxide film layer located beneath the polycrystalline silicon film layer; the method for removing the wafer back seal further includes providing a fifth solution on the surface of the second oxide film layer to remove the second oxide film layer.

[0022] In some embodiments, the thickness of the second oxide film is The fifth solution is a 49% hydrofluoric acid solution, and the fifth solution is provided over a period of 5 to 15 seconds.

[0023] Embodiments of this disclosure also provide an apparatus for removing a wafer back seal, used to remove a film layer on a first surface of a wafer, the film layer including a polysilicon film layer. The apparatus for removing the wafer back seal includes: a wafer support device adapted to place the wafer and control wafer rotation; a solution supply device including: a first nozzle adapted to allow a first solution to flow out; a controller adapted to control the first nozzle to provide the first solution in a first region of the polysilicon film layer and in a second region of the polysilicon film layer; the first region is an annular range of 40% to 50% of the wafer radius; the second region is an annular range of 3% to 5% of the wafer radius.

[0024] In some embodiments, when a first solution is provided in a first region of the polycrystalline silicon film, the wafer support device controls the wafer to rotate at a speed of 1500 to 2000 rpm.

[0025] In some embodiments, the first solution is provided in a first region of the polycrystalline silicon film layer by spraying through a first nozzle; the controller is adapted to control the spraying movement speed of the first nozzle to be 100-140 mm / s and to control the spraying flow rate of the first nozzle to be 1400-1600 mL / min.

[0026] In some embodiments, when the first solution is provided in the second region of the polycrystalline silicon film, the wafer support device controls the wafer to rotate at a speed of 1500 to 2000 rpm.

[0027] In some embodiments, the first solution is provided in the second region of the polycrystalline silicon film layer by spraying through a first nozzle; the controller is adapted to control the spraying movement speed of the first nozzle to be 5-30 mm / s and the spraying flow rate of the first nozzle to be 1400-1600 mL / min.

[0028] In some embodiments, the controller is adapted to control the first nozzle to provide the first solution in a first region of the polycrystalline silicon film layer for a time ratio of 2:1 to 4:1 with the time ratio of the first nozzle to the time the first solution is provided in a second region of the polycrystalline silicon film layer.

[0029] In some embodiments, the solution providing device further includes: a second nozzle adapted to allow a second solution to flow out; a third nozzle adapted to allow a third solution to flow out; the controller is adapted to control the second nozzle to provide a second solution to a film layer on the first surface of the wafer; the controller is adapted to control the third nozzle to provide a third solution to a film layer on the first surface of the wafer.

[0030] In some embodiments, the controller is adapted to control the second nozzle to spray, the spraying movement speed of the second nozzle is 80-120 mm / s, and the spraying flow rate is 1700-1900 mL / min; when the second nozzle is spraying, the wafer support device controls the wafer to rotate, and the rotation speed is 1000-1600 rpm.

[0031] In some embodiments, the controller is adapted to control the third nozzle to spray, the spraying movement speed of the third nozzle is 80-120 mm / s, and the spraying flow rate is 1700-1900 mL / min; when the third nozzle is spraying, the wafer support device controls the wafer to rotate, and the rotation speed is 100-1600 rpm.

[0032] In some embodiments, the film layer further includes: a first oxide film layer located above the polycrystalline silicon film layer, and a second oxide film layer located below the polycrystalline silicon film layer; the solution providing device further includes: a fourth nozzle adapted to allow a fourth solution to flow out, the controller being adapted to control the fourth nozzle to provide a fourth solution on the first oxide film layer; and a fifth nozzle adapted to allow a fifth solution to flow out, the controller being adapted to control the fifth nozzle to provide a fifth solution on the second oxide film layer.

[0033] Compared with the prior art, the technical solutions of the embodiments of this disclosure have the following beneficial effects:

[0034] The method for removing wafer back seals according to embodiments of this disclosure removes the polysilicon film by providing a first solution to a first region and a second region of the polysilicon film, removing the first oxide film by providing a fourth solution, and removing the second oxide film by providing a fifth solution. This method removes the wafer back seals with virtually no residue and virtually no defects on the wafer.

[0035] The wafer back seal removal apparatus of the present disclosure, through the cooperation of a wafer support device, a solution supply device, and a controller, is used to remove the back seal film layer of a wafer, leaving virtually no residue after removal and virtually no defects on the wafer. Attached Figure Description

[0036] Other features and advantages of this disclosure will be better understood through the following detailed description of alternative embodiments in conjunction with the accompanying drawings, in which the same reference numerals denote the same or similar parts, wherein:

[0037] Figure 1 A schematic flowchart of a method for removing the back seal of a wafer is shown in one embodiment of this disclosure;

[0038] Figure 2 A schematic flowchart of a method for removing the back seal of a wafer according to an embodiment of the present disclosure is shown;

[0039] Figure 3-8 A schematic diagram of the intermediate structure of the wafer back seal removal process according to an embodiment of the present disclosure is shown;

[0040] Figure 9 A schematic diagram of the frame structure of an apparatus for removing the wafer back seal in an embodiment of this disclosure is shown. Detailed Implementation

[0041] Embodiments of this disclosure are described in detail below, examples of which are illustrated in the accompanying drawings. In the drawings, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this disclosure, and should not be construed as limiting this disclosure.

[0042] Embodiments of this disclosure provide a method and apparatus for removing the back seal of a wafer.

[0043] This disclosure provides a method for removing a wafer back seal, used to remove a film layer on a first surface of the wafer. Figure 1 A flowchart illustrating a method for removing the wafer back seal in one embodiment of this disclosure is provided. Figure 1 As shown, in S101, a wafer is provided having a first surface on which a film layer is formed, the film layer comprising a polycrystalline silicon film layer; in S102, a first solution is provided in a first region of the polycrystalline silicon film layer, the first region being an annular range of 40% to 50% of the wafer radius; in S103, a first solution is provided in a second region of the polycrystalline silicon film layer, the second region being an annular range of 3% to 5% of the wafer radius.

[0044] In some embodiments, the film layer includes a polycrystalline silicon film layer, and also includes other film layers, such as a first oxide film layer on it and a second oxide film layer below it. The method for removing the wafer back seal of this disclosure will be described below using this film layer structure as an example.

[0045] like Figure 2 The diagram illustrates a flow chart of a method for removing the back seal of a wafer according to an embodiment of this disclosure. Figures 3-6A schematic diagram of the intermediate structure of the wafer back seal removal process according to embodiments of this disclosure is provided below. A detailed description is given below in conjunction with these figures.

[0046] like Figure 2 and Figure 3 As shown, in S201, a wafer 10 is provided, the wafer 10 having a first surface 101 and a second surface 102. In some embodiments, the first surface 101 is the front side, that is, the surface on which a semiconductor structure is formed. A film structure is formed sequentially from top to bottom on the first surface 101, the film structure including, but not limited to, a first oxide film layer 13, a polycrystalline silicon film layer 12, and a second oxide film layer 11.

[0047] A film structure is generally also formed on the second surface 102 of the wafer 10. For the sake of brevity, Figure 3 The image is not shown and will not be described in detail here.

[0048] like Figure 2 and Figure 3 In S202, a fourth solution is provided on the surface of the first oxide film 13 to remove the first oxide film 13 and expose the polycrystalline silicon film 12.

[0049] In some embodiments, the first oxide film 13 is, for example, silicon oxide, and the thickness of the first oxide film 13 is [missing information].

[0050] In some embodiments, the fourth solution is a hydrofluoric acid solution with a concentration of 49% and a temperature of 20-30°C. The duration of the fourth solution being sprayed onto the first oxide film layer 13 is 5-15 seconds, the spraying speed is 0-125 mm / s, and the spraying flow rate is 1100-1300 mL / min.

[0051] In some embodiments, the wafer 10 rotates at 1500-2000 rpm when etching the first oxide film layer 13.

[0052] As a specific embodiment, the thickness of the first oxide film layer 13 is [missing information]. The fourth solution is provided on the surface of the first oxide film layer 13 by spraying, the spraying speed is 0-125 mm / s, the spraying flow rate is 1200 mL / min, the temperature of the fourth solution is 25°C, and the etching time of the fourth solution is 10 s. During etching, the wafer rotates at a speed of 1700 rpm.

[0053] like Figure 4 After S202, the first oxide film layer 13 is removed.

[0054] In some embodiments, the thickness of the polycrystalline silicon film 12 is

[0055] like Figure 2 and Figure 5 In step S203, a first solution is provided in a first region of the polysilicon film 12 for wet etching to remove the polysilicon film 12. The first region is a ring-shaped area covering 40% to 50% of the radius of the wafer 10.

[0056] In some embodiments, a first solution is provided to a first region of the polycrystalline silicon film 12 by a first spray, wherein the spray movement speed of the first spray is 100-140 mm / s and the first spray flow rate is 1400-1600 mL / min.

[0057] In some embodiments, during the first spraying, the wafer 10 rotates at a speed of 1500 to 2000 rpm.

[0058] As a specific embodiment, the method of providing the first solution on the surface of the first region of the polycrystalline silicon film layer 12 is spraying, the spraying moving speed is 0-125 mm / s, the spraying flow rate is 1500 mL / min, the temperature of the first solution is 25°C, the etching time of the first solution is 30 s, and the wafer rotates at a speed of 1700 rpm.

[0059] like Figure 2 and Figure 6 In step S204, a first solution is provided in a second region of the polysilicon film 12 for wet etching to remove the polysilicon film 12. The second region is a ring-shaped range of 3% to 5% of the radius of the wafer 10.

[0060] In some embodiments, a second spray is used to provide a first solution to a second region of the polycrystalline silicon film 12, wherein the spray movement speed of the second spray is 5 to 30 mm / s and the spray flow rate is 1400 to 1600 mL / min.

[0061] In some embodiments, during the second spraying, the wafer 10 rotates at a speed of 1500 to 2000 rpm.

[0062] In one specific embodiment, the first solution is provided on the surface of the second region of the polycrystalline silicon film by spraying. The spraying speed is 5–30 mm / s, the spraying flow rate is 1500 mL / min, the temperature of the first solution is 25°C, and the etching time of the first solution is 10 s. The wafer 10 rotates at a speed of 1700 rpm.

[0063] In some embodiments, the ratio of the operation time for providing the first solution in the first region of the polycrystalline silicon film layer 12 to the operation time for providing the first solution in the second region of the polycrystalline silicon film layer 12 is 2:1 to 4:1, and the total operation time is 25 to 50 seconds.

[0064] In some embodiments, the first solution is an HF / HNO3 solution, wherein the HF:HNO3 ratio is 20:1 to 30:1.

[0065] Continue to refer to Figure 2 and Figure 7 In S205, a fifth solution is provided on the surface of the second oxide film 11 to remove the second oxide film 11.

[0066] In some embodiments, the second oxide film 11 is, for example, silicon oxide, and the thickness of the second oxide film 11 is [missing information].

[0067] In some embodiments, the fifth solution is a hydrofluoric acid solution with a concentration of 49% and a temperature of 20-30°C. The fifth solution is provided to the second oxide film layer 11 for 5-15 seconds. The spray moving speed is 0-125 mm / s, and the spray flow rate is 1100-1300 mL / min.

[0068] In some embodiments, the wafer 10 rotates at 1500-2000 rpm when etching the second oxide film layer 11.

[0069] As a specific embodiment, the thickness of the second oxide film layer 11 is The fifth solution is provided on the surface of the second oxide film layer 11 by spraying, with a spraying speed of 0–125 mm / s, a spraying flow rate of 1200 mL / min, a fifth solution temperature of 25°C, and an etching duration of 10 s. During etching, the wafer rotates at a speed of 1700 rpm.

[0070] like Figure 8 After passing through S205, the second oxide film layer 11 is removed.

[0071] After the above process, the back seal structure on the first surface of the wafer can be completely removed, leaving virtually no residue.

[0072] In some embodiments, in order to remove the back seal structure more cleanly, embodiments of this disclosure may further perform wet etching with a second solution after removing the polysilicon film to remove the residues generated in the polysilicon film removal processes S203 and S204.

[0073] In some embodiments, a second solution is provided by a third spray, wherein the spray movement speed of the third spray is 80-120 mm / s, the flow rate of the third spray is 1700-1900 mL / min, and the range of the third spray is 45%-66% of the wafer radius; during the third spray, the wafer rotates at a speed of 1000-1600 rpm.

[0074] In some embodiments, the second solution is a diluted hydrofluoric acid solution, wherein the component ratio of the diluted hydrofluoric acid solution is HF:H2O = 1:70-90.

[0075] In one specific embodiment, the second solution provided on the wafer surface is a diluted hydrofluoric acid solution of HF:H2O = 1:80, provided by spraying. The spraying speed is 80–120 mm / s, the spraying flow rate is 1800 mL / min, and the spraying range is 45%–66% of the wafer radius. The temperature of the second solution is 25°C, and the etching time is 83 s. During etching, the wafer rotates at 1200 rpm.

[0076] Furthermore, in some embodiments, in order to remove the back seal structure more cleanly, after removing the polysilicon film, the present disclosure embodiments may further perform wet etching with a third solution to remove the residues generated in the polysilicon film removal processes S203 and S204.

[0077] In some embodiments, a third solution is provided by a fourth spray, wherein the spray movement speed of the fourth spray is 80-120 mm / s, the flow rate of the fourth spray is 1700-1900 mL / min, and the range of the fourth spray is 45%-66% of the wafer radius; during the fourth spray, the wafer rotates at a speed of 100-1600 rpm.

[0078] In some embodiments, the third solution is an NH4OH / H2O2 / H2O solution, wherein the component ratio of the NH4OH / H2O2 / H2O solution is NH4OH:H2O2:H2O = 1:2:50.

[0079] In one specific embodiment, the third solution provided to the wafer is an NH4OH / H2O2 / H2O solution with a ratio of NH4OH:H2O2:H2O = 1:2:50. The third solution is provided by spraying, with a spray movement speed of 80–120 mm / s, a spray flow rate of 1800 mL / min, and a spray range of 45%–66% of the wafer radius. The temperature of the third solution is 40°C, and the etching duration is 49 s. During etching, the wafer 10 rotates at 600 rpm.

[0080] Embodiments of this disclosure also provide an apparatus for removing a wafer back seal, used to remove a back seal film layer on a first surface of a wafer, such as... Figure 3 As shown, the film layer includes: a second oxide film layer 11 formed on the surface of the first surface 101 of the wafer 10, a polycrystalline silicon film layer 12 formed on the surface of the second oxide film layer 11, and a first oxide film layer 13 formed on the surface of the polycrystalline silicon film layer 12.

[0081] Figure 9 A schematic diagram of the frame structure of an apparatus for removing the wafer back seal according to an embodiment of this disclosure is shown. Figure 9 In the diagram, wafer 10 is shown as a dashed line because it is not part of the device for removing the wafer back seal. Figure 9 As shown, the device for removing the wafer back seal includes: a wafer support device 2, adapted to place the wafer 10 and control the rotation of the wafer 10; a solution supply device 3, including: a first nozzle 32, adapted to allow a first solution to flow out; and a controller 31, adapted to control the first nozzle 32 to provide the first solution in a first region of the polysilicon film at a first moment and to provide the first solution in a second region of the polysilicon film at a second moment.

[0082] In some embodiments, the first region is a ring-shaped range of 40% to 50% of the radius of the wafer 10; the second region is a ring-shaped range of 3% to 5% of the radius of the wafer 10.

[0083] In some embodiments, the controller 31 controls the first nozzle 32 to spray to provide a first solution to a first region of the polycrystalline silicon film layer. The controller 31 controls the spraying movement speed of the first nozzle 32 to be 100–140 mm / s, and the controller 31 controls the spraying flow rate of the first nozzle 32 to be 1400–1600 mL / min. During spraying, the wafer support device 2 controls the wafer 10 to rotate at a speed of 1500–2000 rpm.

[0084] In some embodiments, the controller 31 controls the first nozzle 32 to spray to provide a first solution to the second region of the polycrystalline silicon film. The controller 31 controls the spraying movement speed of the first nozzle 32 to be 5–30 mm / s, and the controller 31 controls the spraying flow rate of the first nozzle 32 to be 1400–1600 mL / min. While the first nozzle 32 is spraying, the wafer support device 2 controls the wafer 10 to rotate at a speed of 1500–2000 rpm.

[0085] In some embodiments, the solution providing device 3 further includes: a second nozzle 33 adapted to allow a second solution to flow out; the controller 31 is adapted to control the second nozzle 33 to provide the second solution to the film layer on the first surface of the wafer 10. The controller 31 controls the second nozzle 33 to spray, the controller 31 controls the spray moving speed to be 80-120 mm / s, and the controller 31 controls the spray flow rate to be 1700-1900 mL / min; while the second nozzle 33 is spraying, the wafer support device 2 controls the wafer 10 to rotate at a speed of 1000-1600 rpm.

[0086] In some embodiments, the solution providing device 3 further includes: a third nozzle 34 adapted to allow a third solution to flow out; the controller 31 is adapted to control the third nozzle 34 to provide the third solution to the film layer on the first surface of the wafer 10. The controller 31 controls the third nozzle 34 to spray, the controller 31 controls the spray moving speed to be 80-120 mm / s, and the controller 31 controls the spray flow rate to be 1700-1900 mL / min; while the third nozzle 34 is spraying, the wafer support device 2 controls the wafer 10 to rotate at a speed of 100-1600 rpm.

[0087] In some embodiments, the solution providing device 3 further includes: a fourth nozzle 35 adapted to allow a fourth solution to flow out, the controller 31 being adapted to control the fourth nozzle 35 to provide a fourth solution on a first oxide film layer on a first surface 101 of the wafer 10; and a fifth nozzle 36 adapted to allow a fifth solution to flow out, the controller 31 being adapted to control the fifth nozzle 36 to provide a fifth solution on a second oxide film layer on the first surface 101 of the wafer 10.

[0088] In some embodiments, the fourth nozzle 35 and the fifth nozzle 36 are the same nozzle.

[0089] The above description is merely an exemplary embodiment used to illustrate the principles of this disclosure and is not intended to limit the scope of protection of this disclosure. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and substance of this disclosure, and these modifications and improvements are also within the scope of protection of this disclosure.

Claims

1. A method for removing a wafer back seal, used to remove a film layer on a first surface of a wafer, said film layer comprising a polycrystalline silicon film layer, the method for removing the wafer back seal comprising: A first solution is provided by a first spray in a first region of the polycrystalline silicon film layer, the first region being an annular range of 40% to 50% of the wafer radius, and the first spray moving speed is 100 to 140 mm / s; A first solution is provided in a second region of the polycrystalline silicon film layer by a second spray, the second region being an annular range of 3% to 5% of the wafer radius, and the second spray moving speed is 5 to 30 mm / s; The ratio of the operation time for providing the first solution through a first spray in the first region of the polycrystalline silicon film to the operation time for providing the first solution through a second spray in the second region of the polycrystalline silicon film is 2:1 to 4:

1.

2. The method for removing the wafer back seal according to claim 1, characterized in that, The first solution is provided by a first spray in the first region of the polycrystalline silicon film layer, and the wafer rotates at a speed of 1500~2000 rpm when the wafer back seal is removed by the first spray.

3. The method for removing the wafer back seal according to claim 2, characterized in that, The first spray flow rate is 1400~1600mL / min.

4. The method for removing the back seal of a wafer according to claim 1, characterized in that, The first solution is provided in the second region of the polycrystalline silicon film layer by a second spray, and the wafer rotates at a speed of 1500~2000 rpm when the wafer back seal is removed by the second spray.

5. The method for removing the wafer back seal according to claim 4, characterized in that, The second spray flow rate is 1400~1600mL / min.

6. The method for removing the wafer back seal according to claim 1, characterized in that, The thickness of the polycrystalline silicon film is 4000~8000 Å.

7. The method for removing the back seal of a wafer according to any one of claims 1-6, characterized in that, Also includes: After the first solution is successively provided to the first and second regions of the polycrystalline silicon film, the second and third solutions are sequentially provided to the film layer on the first surface of the wafer in order to remove the residues generated during the removal of the polycrystalline silicon film.

8. The method for removing the wafer back seal according to claim 7, characterized in that, The second solution is provided to the film layer on the first surface of the wafer via a third spray, during which the wafer rotates at a speed of 1000~1600 rpm.

9. The method for removing the wafer back seal according to claim 8, characterized in that, The third spray moving speed is 80~120mm / s, the third spray flow rate is 1700~1900mL / min, and the third spray range is 45%~66% of the wafer radius.

10. The method for removing the wafer back seal according to claim 7, characterized in that, The third solution is provided to the film layer on the first surface of the wafer via a fourth spray, during which the wafer rotates at a speed of 100-1600 rpm.

11. The method for removing the wafer back seal according to claim 10, characterized in that, The fourth spray moving speed is 80~120mm / s, the fourth spray flow rate is 1700~1900mL / min, and the fourth spray range is 45%~66% of the wafer radius.

12. The method for removing the back seal of a wafer according to claim 7, characterized in that, The second solution is a diluted hydrofluoric acid solution, wherein the component ratio of the diluted hydrofluoric acid solution is HF:H2O = 1:70~90.

13. The method for removing the back seal of a wafer according to any one of claims 1-6 and 8-12, characterized in that, The film layer further includes: a first oxide film layer located on the polycrystalline silicon film layer; the method for removing the wafer back seal further includes: providing a fourth solution on the surface of the first oxide film layer to remove the first oxide film layer.

14. The method for removing the wafer back seal according to claim 13, characterized in that, The thickness of the first oxide film is 800~1200 Å, the fourth solution is a 49% hydrofluoric acid solution, and the fourth solution is provided for 5~15 seconds.

15. The method for removing the back seal of a wafer according to any one of claims 1-6 and 8-12, characterized in that, The film layer further includes a second oxide film layer located beneath the polycrystalline silicon film layer; the method for removing the wafer back seal further includes providing a fifth solution on the surface of the second oxide film layer to remove the second oxide film layer.

16. The method for removing the wafer back seal according to claim 15, characterized in that, The second oxide film has a thickness of 800~1200 Å, the fifth solution is a 49% hydrofluoric acid solution, and the fifth solution is provided for 5~15 seconds.

17. An apparatus for removing a wafer back seal, used to remove a film layer on a first surface of a wafer, said film layer comprising a polycrystalline silicon film layer, characterized in that, include: A wafer support device, suitable for placing wafers and controlling their rotation; Solution supply device, comprising: The first nozzle is adapted to allow the first solution to flow out; A controller is adapted to control the first nozzle to provide a first solution in a first region of the polycrystalline silicon film and in a second region of the polycrystalline silicon film; the first region is an annular range of 40% to 50% of the wafer radius, and the controller is adapted to control the first nozzle to provide the first solution in the first region at a spray movement speed of 100 to 140 mm / s; the second region is an annular range of 3% to 5% of the wafer radius, and the controller is adapted to control the first nozzle to provide the first solution in the second region at a spray movement speed of 5 to 30 mm / s; the controller is adapted to control the time ratio of the first nozzle providing the first solution in the first region of the polycrystalline silicon film to providing the first solution in the second region of the polycrystalline silicon film to be 2:1 to 4:

1.

18. The apparatus for removing wafer back seals according to claim 17, characterized in that, When the first solution is provided in the first region of the polycrystalline silicon film, the wafer support device controls the wafer to rotate at a speed of 1500~2000 rpm.

19. The apparatus for removing wafer back seals according to claim 18, characterized in that, The first solution is provided in a first region of the polycrystalline silicon film layer by spraying through a first nozzle; the controller is adapted to control the first nozzle to provide the first solution in the first region at a spray flow rate of 1400~1600mL / min.

20. The apparatus for removing wafer back seals according to claim 17, characterized in that, When the first solution is provided in the second region of the polycrystalline silicon film, the wafer support device controls the wafer to rotate at a speed of 1500~2000 rpm.

21. The apparatus for removing wafer back seals according to claim 20, characterized in that, The first solution is provided in a second region of the polycrystalline silicon film layer by spraying through a first nozzle; the controller is adapted to control the first nozzle to provide the first solution in the second region at a spray flow rate of 1400~1600mL / min.

22. The apparatus for removing wafer back seals according to any one of claims 17-21, characterized in that, The solution providing device further includes: The second nozzle is adapted to allow the second solution to flow out; The third nozzle is designed to allow the third solution to flow out. The controller is adapted to control the second nozzle to provide a second solution to the film layer on the first surface of the wafer; The controller is adapted to control the third nozzle to provide a third solution to the film layer on the first surface of the wafer.

23. The apparatus for removing wafer back seals according to claim 22, characterized in that, The controller is adapted to control the second nozzle to spray, the spraying movement speed of the second nozzle is 80~120mm / s, and the spraying flow rate is 1700~1900mL / min; when the second nozzle is spraying, the wafer support device controls the wafer to rotate at a speed of 1000~1600rpm.

24. The apparatus for removing wafer back seals according to claim 22, characterized in that, The controller is adapted to control the third nozzle to spray, the spraying movement speed of the third nozzle is 80~120mm / s, and the spraying flow rate is 1700~1900mL / min; when the third nozzle is spraying, the wafer support device controls the wafer to rotate at a speed of 100~1600rpm.

25. The apparatus for removing wafer back seal according to claim 17, wherein the film layer further comprises: The first oxide film layer located above the polycrystalline silicon film layer, and the second oxide film layer located below the polycrystalline silicon film layer, are characterized in that the solution supply device further includes: A fourth nozzle is adapted to allow a fourth solution to flow out, and the controller is adapted to control the fourth nozzle to provide a fourth solution on the first oxide film layer; A fifth nozzle is adapted to allow a fifth solution to flow out, and the controller is adapted to control the fifth nozzle to provide a fifth solution on the second oxide film layer.

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