Semiconductor circuit manufacturing process, post-curing equipment and semiconductor circuit production line

Abstract

The present invention discloses a semiconductor circuit manufacturing process, post-curing equipment, and a semiconductor circuit production line. The semiconductor circuit manufacturing process includes: performing a rib cutting and forming process on a sealed and encapsulated semi-finished product; performing a post-curing process on the semi-finished product after rib cutting and forming, and performing a high-temperature electrical parameter test on the semi-finished product during the post-curing process; and marking the semi-finished product that has passed the high-temperature electrical parameter test. The technical solution of the present invention effectively improves the production efficiency of semiconductor circuits.

Description

Technical Field

[0001] The present invention relates to the field of power semiconductors, and in particular to a semiconductor circuit manufacturing process, post-curing equipment and a semiconductor circuit production line. Background Art

[0002] Semiconductor circuits are power-driven products that combine power electronics and integrated circuit technology. Intelligent power modules (IPMs) are one type of semiconductor circuit. The existing semiconductor circuit manufacturing process typically involves: 1. Assembling circuit components (including chips and resistors and capacitors) and lead frames on a circuit substrate; 2. Reflow soldering of the circuit components and lead frames to the circuit substrate in a reflow oven; 3. Cleaning and wire bonding; 4. Encapsulating the circuit substrate with resin to obtain a semi-finished product; 5. Post-curing the semi-finished product; 6. Laser marking; 7. Cutting and forming; 8. Electrical parameter testing (including room temperature and high temperature testing). In this semiconductor circuit manufacturing process, the electrical parameter testing process involves sequentially performing room temperature and high temperature testing, which takes a long time and results in low semiconductor circuit production efficiency. Summary of the Invention

[0003] The main purpose of the present invention is to provide a semiconductor circuit manufacturing process, aiming to improve the production efficiency of semiconductor circuits.

[0004] To achieve the above-mentioned object, the present invention provides a semiconductor circuit manufacturing process, comprising:

[0005] The semi-finished products after sealing and packaging are subjected to rib cutting and forming processing;

[0006] Post-curing the semi-finished product after the rib cutting and forming, and performing the high-temperature electrical parameter test on the semi-finished product during the post-curing process;

[0007] The semi-finished products that have passed the high-temperature electrical parameter test are marked.

[0008] Preferably, the step of performing high-temperature electrical parameter testing on the semi-finished product during the post-curing process includes:

[0009] Detect the ambient temperature during the curing process;

[0010] After detecting that the ambient temperature is constant, a high-temperature electrical parameter test is performed on the semi-finished product.

[0011] Preferably, the step of performing high-temperature electrical parameter testing on the semi-finished product during the post-curing process includes:

[0012] Detect the ambient temperature during the curing process;

[0013] After detecting that the ambient temperature reaches a preset value, a high-temperature electrical parameter test is performed on the semi-finished product.

[0014] Preferably, the manufacturing process of the semiconductor circuit further includes:

[0015] Semi-finished products that are determined to be unqualified through the high-temperature electrical parameter test will be removed from the production line.

[0016] Preferably, after the step of marking the semi-finished product that has passed the high-temperature electrical parameter test, the manufacturing process of the semiconductor circuit further comprises:

[0017] Conduct electrical parameter testing at room temperature on the finished product obtained after marking;

[0018] Finished products that have passed the normal temperature electrical parameter test are packaged and put into storage.

[0019] Preferably, before the step of performing rib cutting and forming on the sealed and packaged semi-finished product, the manufacturing process of the semiconductor circuit further comprises:

[0020] Assembling circuit components and positioning lead frames on circuit substrates;

[0021] Reflow oven reflow and soldering inspection;

[0022] Cleaning and bonding;

[0023] The plastic mold seals the package.

[0024] The present invention further proposes a post-curing device for a semiconductor circuit production line, comprising a post-curing device and a high-temperature electrical parameter testing device. The post-curing device is used to cure the semi-finished product after cutting and forming, and the high-temperature electrical parameter testing device is used to test the electrical parameters of the semi-finished product undergoing curing in the post-curing device.

[0025] Preferably, the high-temperature electrical parameter testing device includes a testing module and a temperature detection module electrically connected to each other, the temperature detection module is used to detect the ambient temperature in the post-curing device, and the testing module is used to test the electrical parameters of the semi-finished product undergoing curing in the post-curing device after the temperature detection module detects that the temperature is constant or the temperature reaches a preset value.

[0026] Preferably, the post-curing equipment also includes a diversion device electrically connected to the test module, the post-curing device has two output channels, and the diversion device is used to transfer the semi-finished products that have passed the test of the test module and the semi-finished products that have failed the test to different output channels respectively.

[0027] The present invention further proposes a semiconductor circuit production line, including post-curing equipment, the post-curing equipment including a post-curing device and a high-temperature electrical parameter testing device, the post-curing device is used to cure the semi-finished product after cutting and forming, and the high-temperature electrical parameter testing device is used to test the electrical parameters of the semi-finished product undergoing curing in the post-curing device.

[0028] The technical solution for the semiconductor circuit manufacturing process of the present invention adopts a method of first performing a cutting and forming process to obtain a semi-finished product with independent pins before the post-curing process, and then performing a post-curing process on the semi-finished product with independent pins. During the post-curing process, the semi-finished product is subjected to a high-temperature electrical parameter test, and qualified semi-finished products are screened out and transported to the marking equipment for marking. Compared with the manufacturing process of the prior art, the high-temperature electrical parameter test of the semiconductor circuit manufacturing process of the present invention is completed during the post-curing process, eliminating the high-temperature electrical parameter test step after the marking process, thereby shortening the overall length of the semiconductor circuit manufacturing process and improving the production efficiency of the semiconductor circuit; and, only qualified semi-finished products screened out by the high-temperature electrical parameter test are sent to the marking process, reducing the number of semi-finished products to be marked, further improving the production efficiency of the semiconductor circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 1 is a schematic flow chart of a semiconductor circuit manufacturing process according to an embodiment of the present invention;

[0030] Figure 2 1 is a schematic flow chart of a semiconductor circuit manufacturing process according to an embodiment of the present invention;

[0031] Figure 3 1 is a schematic flow chart of a semiconductor circuit manufacturing process according to an embodiment of the present invention;

[0032] Figure 4 1 is a schematic flow chart of a semiconductor circuit manufacturing process according to an embodiment of the present invention;

[0033] Figure 5 1 is a schematic flow chart of a semiconductor circuit manufacturing process according to an embodiment of the present invention;

[0034] Figure 6 1 is a schematic flow chart of a semiconductor circuit manufacturing process according to an embodiment of the present invention;

[0035] Figure 7 Schematic diagram of the structure of the post-curing equipment in one embodiment of the present invention. DETAILED DESCRIPTION

[0036] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0037] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0038] It should also be noted that when an element is referred to as being "fixed on" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element.

[0039] In addition, the descriptions of "first", "second", etc. in the present invention are for descriptive purposes only and should not be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between the various embodiments can be combined with each other, but this must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0040] The semiconductor circuit mentioned in the present invention is a circuit module that integrates power switching devices and high-voltage drive circuits and is sealed and packaged on the outside. It is widely used in the field of power electronics, such as inverters for driving motors, various inverter voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency home appliances, and other fields. The semiconductor circuit here has many other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or other names such as hybrid integrated circuit, power semiconductor module, power module, etc. In the following embodiments of the present invention, it is collectively referred to as Modular Intelligent Power System (MIPS).

[0041] An embodiment of the present invention provides a MIPS manufacturing process.

[0042] See Figure 1 , Figure 1 FIG. 1 is a flow chart of a MIPS manufacturing process according to an embodiment of the present invention.

[0043] In this embodiment, the MIPS manufacturing process includes:

[0044] Step S10, performing rib cutting and forming processing on the sealed and packaged semi-finished product;

[0045] After the semi-finished product (i.e., the sealed and encapsulated MIPS semi-finished product) is encapsulated by the plastic encapsulation mold in the previous process, it is transported to the rib cutting and forming equipment for rib cutting and forming. This rib cutting and forming process involves removing excess pins and lead frame connecting ribs from the semi-finished product to isolate the individual pins. The individual pins of the semi-finished product are then formed into the desired shape according to product requirements.

[0046] Step S20, post-curing the semi-finished product after the rib cutting and forming, and performing a high-temperature electrical parameter test on the semi-finished product during the post-curing process;

[0047] The semi-finished products (i.e., the semi-finished products after being cut and formed) discharged from the cutting and forming equipment are transported to the post-curing equipment for post-curing. This involves maintaining the semi-finished products at a certain temperature (e.g., 175°C) for a period of time to eliminate stress generated within the semi-finished products after being plastic-sealed and improve product performance. The post-curing equipment is equipped with a high-temperature electrical parameter testing device, which performs high-temperature electrical parameter testing (i.e., electrical parameter testing in a high-temperature environment) on the semi-finished products during the post-curing process to verify their performance in this high-temperature environment.

[0048] Step S30 , marking the semi-finished products that have passed the high-temperature electrical parameter test.

[0049] The post-curing equipment transports qualified semi-finished products, which have passed the high-temperature electrical parameter testing, to the marking equipment for marking. This process involves printing information such as the model, logo, and batch number on the semi-finished products. Once marked, the finished MIPS products are packaged and stored directly, or they can undergo further processing.

[0050] The MIPS manufacturing process of this embodiment uses a cutting and forming process to obtain a semi-finished product with independent pins before post-curing. The semi-finished product with independent pins is then post-cured. During the post-curing process, the semi-finished product is subjected to high-temperature electrical parameter testing. Qualified semi-finished products are screened and transported to a marking device for marking. Compared to the manufacturing process of the prior art, the high-temperature electrical parameter testing of the MIPS manufacturing process of the present invention is completed during the post-curing process, eliminating the high-temperature electrical parameter testing step after the marking process, thereby shortening the overall duration of the MIPS manufacturing process and improving MIPS production efficiency. In addition, only qualified semi-finished products that have passed the high-temperature electrical parameter testing are sent to the marking process, reducing the number of semi-finished products that need to be marked, further improving MIPS production efficiency.

[0051] Furthermore, because the high-temperature electrical parameter testing of the MIPS manufacturing process in this embodiment is performed directly during the post-curing process, utilizing the high-temperature environment of the post-curing equipment, this eliminates the need for a separate high-temperature environment for testing in existing manufacturing processes, thus saving the costs associated with providing an additional high-temperature environment. By performing high-temperature electrical parameter testing during the post-curing process, internal defects in the MIPS semi-finished product can be discovered earlier, allowing unqualified semi-finished products to be screened out earlier, thereby improving the quality of the finished product after the marking process.

[0052] See Figure 2 In this embodiment, the manufacturing process of MIPS further includes:

[0053] Step S40: The semi-finished products that are determined to be unqualified by the high-temperature electrical parameter test are removed from the production line.

[0054] The semi-finished products that fail the test of the high-temperature electrical parameter test device can be directly taken off the production line for processing through post-curing equipment, thereby avoiding the processing of unqualified semi-finished products in the subsequent manufacturing process, reducing useless costs, and improving the efficiency of the subsequent manufacturing process.

[0055] See Figure 3 In this embodiment, the step of performing high-temperature electrical parameter testing on the semi-finished product during the post-curing process in step S20 includes:

[0056] Step S01, detecting the ambient temperature during the curing process;

[0057] The high-temperature electrical parameter testing device has a temperature detection module (such as a temperature sensor). Since temperature changes will affect the high-temperature electrical parameter test, the high-temperature electrical parameter test needs to be carried out under a relatively constant temperature. The high-temperature electrical parameter testing device first detects the ambient temperature of the post-curing process (i.e., the temperature inside the post-curing equipment) through the temperature detection module to determine the changes in the ambient temperature during the curing process.

[0058] Step S02: After detecting that the ambient temperature is constant, a high-temperature electrical parameter test is performed on the semi-finished product.

[0059] After the high-temperature electrical parameter testing device determines that the ambient temperature is constant through the temperature detection module, it begins to perform high-temperature electrical parameter testing on the semi-finished product, thereby ensuring the accuracy of the high-temperature electrical parameter testing of the semi-finished product and accurately screening out qualified and unqualified semi-finished products. The high-temperature electrical parameter device can determine that the ambient temperature is constant by: if the temperature detection module detects that the change in ambient temperature is less than a preset difference (e.g., 1°C) within a preset time (e.g., 10 seconds), the ambient temperature is determined to be constant.

[0060] See Figure 4 In this embodiment, the step of performing high-temperature electrical parameter testing on the semi-finished product during the post-curing process in step S20 includes:

[0061] Step S11, detecting the ambient temperature during the curing process;

[0062] The high-temperature electrical parameter testing device has a temperature detection module. Since temperature changes will affect the high-temperature electrical parameter test, the high-temperature electrical parameter test needs to be carried out under relatively constant temperature conditions. The high-temperature electrical parameter testing device first detects the ambient temperature of the post-curing process (i.e., the temperature inside the post-curing equipment) through the temperature detection module to determine the ambient temperature during the curing process.

[0063] Step S12: After detecting that the ambient temperature reaches a preset value, a high-temperature electrical parameter test is performed on the semi-finished product.

[0064] After the temperature detection module determines that the ambient temperature has reached the preset value, the high-temperature electrical parameter testing device will determine that the ambient temperature is constant and begin high-temperature electrical parameter testing of the semi-finished product. This ensures the accuracy of the high-temperature electrical parameter testing of the semi-finished product and accurately screens out qualified and unqualified semi-finished products. For example, the temperature during the constant temperature stage of the curing process in the post-curing equipment is 175°C. When the temperature detection module detects that the ambient temperature has reached 175°C (or a temperature value above 170°C), the ambient temperature is determined to be constant.

[0065] See Figure 5In this embodiment, after step S30, the manufacturing process of MIPS further includes:

[0066] Step S50, performing a room temperature electrical parameter test on the finished product obtained after the marking process;

[0067] Generally, after most products have passed the high-temperature electrical parameter test, their normal-temperature electrical parameter test (i.e., the electrical parameter test under normal temperature environment) will basically also pass. However, for some specific products, this is not necessarily the case. Therefore, after the marking equipment has marked the semi-finished product to obtain the finished product, the normal-temperature electrical parameter test is performed through the normal-temperature electrical parameter testing device to determine whether the parameter performance under normal temperature environment is qualified.

[0068] Step S60: The finished products that have passed the normal temperature electrical parameter test are packaged and stored.

[0069] After the normal temperature electrical parameter test determines that the finished product's parameter performance is qualified, the finished product is deemed to be of good quality and is packaged for storage. Finished products that fail the normal temperature electrical parameter test are removed from production. This embodiment effectively ensures the quality of the finished product through both high temperature and normal temperature electrical parameter testing.

[0070] Reference Figure 6 In this embodiment, before step S10, the manufacturing process of MIPS further includes:

[0071] Step S101, assembling circuit components and positioning lead frames on a circuit substrate;

[0072] A circuit substrate includes a metal aluminum substrate, an insulating layer covering the surface of the metal aluminum substrate, and a circuit wiring layer formed on the surface of the insulating layer. The manufacturing process for the circuit substrate includes: placing an insulating layer beneath the copper foil to form a semi-finished copper foil; placing the semi-finished copper foil on the surface of the metal aluminum substrate to form a laminated substrate; forming a circuit wiring layer by etching the copper foil of the laminated substrate; and placing an insulating film on the surface of the formed circuit wiring layer. Assembling circuit components and positioning lead frames on the circuit substrate includes: first placing the circuit substrate on a specialized carrier (the carrier can be made of aluminum, synthetic stone, ceramic, PPS, or other materials resistant to temperatures above 200°C), applying solder paste or silver glue to the component mounting positions reserved for the circuit wiring layer, attaching the chip to the corresponding component mounting position using an automatic die bonding machine, attaching the resistor and capacitor to the corresponding component mounting position using an automatic placement machine, and then placing the lead frame on the corresponding position of the metal substrate using a robotic arm (aligning the pins with the pin pads).

[0073] Step S102, reflow in a reflow furnace and soldering inspection;

[0074] The entire semi-finished product and the carrier are then put through a reflow oven, where all circuit components (including chips, resistors, and capacitors) are soldered to their corresponding component mounting locations, and the lead frame pins are soldered to their corresponding pin pads. Semi-finished products emerging from the reflow oven undergo visual inspection and AOI testing for soldering quality. Those that pass the inspection are transferred to subsequent processes, while those that fail are removed.

[0075] Step S103, cleaning and wire bonding;

[0076] After passing the welding inspection, the semi-finished product is then cleaned using spray and ultrasonic cleaning methods to remove foreign matter such as flux and aluminum chips remaining on the insulation layer. Bonding wires are then used to establish electrical connections between the four circuit components and the circuit wiring layer.

[0077] Step S104: sealing and packaging with a plastic molding mold.

[0078] The semi-finished product after wire bonding is placed in a plastic packaging mold for packaging to obtain a sealed and packaged semi-finished product.

[0079] The present invention further provides a post-curing device for a MIPS production line.

[0080] See Figure 7 , Figure 7 It is a structural schematic diagram of a post-curing device in one embodiment of the present invention.

[0081] In this embodiment, the post-curing equipment includes a post-curing device 10 and a high-temperature electrical parameter testing device. The post-curing device 10 is used to cure the semi-finished product 100 after cutting and forming, and the high-temperature electrical parameter testing device is used to test the electrical parameters of the semi-finished product 100 undergoing curing in the post-curing device 10.

[0082] The post-curing apparatus of this embodiment is primarily used to post-cure a semi-finished product 100 that has undergone rib cutting and forming to obtain independent pins. Since the pins of the semi-finished product 100 after rib cutting and forming are independent of each other, the high-temperature electrical parameter testing device can perform high-temperature electrical parameter testing on the semi-finished product 100 undergoing curing in the post-curing apparatus 10 to verify its performance.

[0083] The post-curing equipment of this embodiment has a high-temperature electrical parameter testing device for performing high-temperature electrical parameter testing on the semi-finished product 100 during the post-curing process. Thus, during the curing process of the post-curing device 10, qualified semi-finished products 100 are screened out and transported to subsequent processing steps (marking processing by the marking device). A MIPS production line using the post-curing equipment of this embodiment completes both the curing process and the high-temperature electrical parameter testing through the post-curing equipment, eliminating the high-temperature electrical parameter testing step after the marking process, thereby shortening the production cycle of a single product of the MIPS production line and improving the production efficiency of the MIPS production line. Furthermore, only qualified semi-finished products 100 screened out through the high-temperature electrical parameter test are transported to subsequent processing steps, reducing the number of semi-finished products 100 to be processed in the subsequent processes and further improving the production efficiency of the MIPS production line.

[0084] Furthermore, in this embodiment, the high-temperature electrical parameter testing device includes a test module 20 and a temperature detection module (not shown, e.g., a temperature sensor) that are electrically connected to each other. The temperature detection module is used to detect the ambient temperature in the post-curing device 10. After the temperature detection module detects that the temperature is constant or has reached a preset value, the test module 20 is used to test the electrical parameters of the semi-finished product 100 undergoing curing in the post-curing device 10. In one embodiment, the test module 20 includes a control unit 21 and a test fixture 22. The control unit 21 is electrically connected to the test fixture 22 and the temperature detection module. After the temperature detection module detects that the ambient temperature is constant or has reached a preset value, the control unit 21 controls the test fixture 22 to test the semi-finished product 100.

[0085] Because temperature changes can affect high-temperature electrical parameter testing, high-temperature electrical parameter testing needs to be performed under relatively constant temperature conditions. The high-temperature electrical parameter testing device first detects the ambient temperature during the post-curing process (i.e., the temperature within the post-curing device 10) through the temperature detection module to determine the ambient temperature during the curing process. After the temperature detected by the temperature detection module is constant or reaches a preset value, the testing module 20 begins to perform high-temperature electrical parameter testing on the semi-finished product 100 during the curing process, thereby ensuring the accuracy of the high-temperature electrical parameter testing of the semi-finished product 100 and accurately screening out qualified and unqualified semi-finished products 100. For example, if the temperature during the constant temperature stage of the curing process in the post-curing device is 175°C, when the temperature detection module detects that the ambient temperature reaches 175°C (or a temperature value above 170°C), the ambient temperature is determined to be constant; or if the ambient temperature detected by the temperature detection module changes by less than a preset difference (e.g., 1°C) within a preset time (e.g., 10 seconds), the ambient temperature is determined to be constant.

[0086] Furthermore, in this embodiment, the post-curing equipment also includes a diversion device 30 electrically connected to the testing module 20. The post-curing device 10 has two output channels 11. The diversion device 30 is used to transfer semi-finished products 100 that have passed the testing of the testing module 20 and semi-finished products 100 that have failed the testing to different output channels 11. When the testing module 20 tests the semi-finished product 100 as passing, a first control signal is sent to the diversion device 30, causing the diversion device 30 to transfer the passing semi-finished product 100 to one output channel 11 for subsequent processing. When the testing module 20 tests the semi-finished product 100 as failing, a second control signal is sent to the diversion device 30, causing the diversion device 30 to transfer the failing semi-finished product 100 to the other output channel 11, thereby removing the failing semi-finished product 100 from the production line. In some embodiments, the diversion device 30 can be a robot or other automatic diversion mechanism.

[0087] The present invention further provides a MIPS production line including a post-curing device. The specific structure of the post-curing device can be referred to in the above-mentioned embodiments. Since the MIPS production line of the present invention adopts all the technical solutions of all the above-mentioned embodiments, it has at least all the beneficial effects brought about by the technical solutions of the above-mentioned embodiments, and will not be detailed here.

[0088] The above description is only a partial or preferred embodiment of the present invention. Neither the text nor the drawings can limit the scope of protection of the present invention. Any equivalent structural transformation made by using the contents of the present invention specification and drawings under the overall concept of the present invention, or direct / indirect application in other related technical fields, is included in the scope of protection of the present invention.

Claims

1. A semiconductor circuit manufacturing process, characterized in that: include: The semi-finished products after sealing and packaging are subjected to rib cutting and forming processing; The semi-finished product after cutting and forming is subjected to post-curing treatment, and the semi-finished product is subjected to high-temperature electrical parameter testing during the post-curing treatment; Marking the semi-finished products that have passed the high-temperature electrical parameter test; The manufacturing process of the semiconductor circuit further includes: Remove the semi-finished products that are determined to be unqualified by the high-temperature electrical parameter test from the production line; The rib cutting and forming process includes: cutting off the redundant pins of the semi-finished product and the connecting ribs of the lead frame to make the pins of the semi-finished product independent of each other, and then forming the independent pins of the semi-finished product into the required shape according to product requirements.

2. The semiconductor circuit manufacturing process according to claim 1, wherein: The step of performing high-temperature electrical parameter testing on the semi-finished product during the post-curing process includes: Detect the ambient temperature during the curing process; After detecting that the ambient temperature is constant, a high-temperature electrical parameter test is performed on the semi-finished product.

3. The semiconductor circuit manufacturing process according to claim 1, wherein: The step of performing high-temperature electrical parameter testing on the semi-finished product during the post-curing process includes: Detect the ambient temperature during the curing process; After detecting that the ambient temperature reaches a preset value, a high-temperature electrical parameter test is performed on the semi-finished product.

4. The semiconductor circuit manufacturing process according to claim 1, wherein: After the step of marking the semi-finished product that has passed the high-temperature electrical parameter test, the manufacturing process of the semiconductor circuit further includes: Conduct electrical parameter testing at room temperature on the finished product obtained after marking; Finished products that have passed the normal temperature electrical parameter test are packaged and put into storage.

5. The semiconductor circuit manufacturing process according to claim 1, wherein: Before the step of performing rib cutting and forming on the sealed and packaged semi-finished product, the manufacturing process of the semiconductor circuit further includes: Assembling circuit components and positioning lead frames on circuit substrates; Reflow oven reflow and soldering inspection; Cleaning and bonding; The plastic mold seals the package.

6. A semiconductor circuit production line, characterized in that: Execute the semiconductor circuit manufacturing process according to any one of claims 1 to 5.

7. A post-curing device for a semiconductor circuit production line according to claim 6, characterized in that: It includes a post-curing device and a high-temperature electrical parameter testing device. The post-curing device is used to cure the semi-finished product after cutting and forming, and the high-temperature electrical parameter testing device is used to test the electrical parameters of the semi-finished product being cured in the post-curing device.

8. The post-curing device according to claim 7, characterized in that: The high-temperature electrical parameter testing device includes a testing module and a temperature detection module electrically connected to each other. The temperature detection module is used to detect the ambient temperature in the post-curing device. The testing module is used to test the electrical parameters of the semi-finished product undergoing curing in the post-curing device after the temperature detection module detects that the temperature is constant or reaches a preset value.

9. The post-curing device according to claim 8, characterized in that The post-curing equipment also includes a shunt device electrically connected to the test module, the post-curing device has two output channels, and the shunt device is used to transfer the semi-finished products that have passed the test of the test module and the semi-finished products that have failed the test to different output channels respectively.

Images