An apparatus for LED wafer processing

Abstract

The application provides a device for LED wafer processing, which comprises a carrier disc and a pressing ring. The side surface of the carrier disc is an inclined surface, and the carrier disc side surface and the wafer placement surface form a carrier disc inclined angle. The pressing ring is used for fixing the carrier disc, the pressing ring positioning angle is used for positioning the carrier disc inclined angle, and the pressing piece part is used for pressing the carrier disc edge. The device sets the shape and angle of the pressing ring positioning angle and the carrier disc inclined angle to match. While appropriately increasing the size of the carrier disc, the device can avoid the problem that the carrier disc is too large to be pressed by the pressing ring, can make the machine table work normally, can avoid the carrier disc from deviating from the fixation of the pressing ring during the friction process between the carrier disc and the pressing ring when the process is transmitted into the chamber, and can effectively ensure the service life of the carrier disc and the wafer processing yield, and realizes stable mass production.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, and more specifically, relates to an apparatus for LED wafer fabrication processes. Background Technology

[0002] III-V group nitrides, due to their direct bandgap semiconductor characteristics, possess excellent physical properties such as large bandgap, high breakdown electric field, and high electron saturation mobility, attracting widespread attention in the fields of electricity and optics. Among them, light-emitting diodes (LEDs) based on GaN have seen significant development in lighting, displays, and digital applications. Research shows that depositing an AlN buffer layer on a sapphire substrate using PVD (Physical Vapor Deposition) followed by epitaxial growth of GaN material can significantly improve the quality of GaN-based LED crystals, thereby significantly enhancing the performance of LED devices. This processing technology, combining patterned sapphire substrates with AlN buffer layer deposition, has become the mainstream process method for LED chip manufacturers.

[0003] As competition intensifies in the LED chip market, manufacturers are reducing costs through increased production capacity. AlN buffer layers, deposited on patterned sapphire substrates, are a crucial substrate material for LED wafer production. However, the processing capacity of the AlN buffer layer directly constrains the increase in LED wafer production capacity. The number of substrates that a PVD carrier can support directly determines the AlN buffer layer processing capacity per PVD run.

[0004] Appendix Figure 1 A schematic diagram of an existing carrier disk for a PVD device (such as model A230) is shown, with appendix. Figure 2 A schematic diagram of the wafer is shown. Figure 1 On the wafer placement surface of the existing carrier disk 01 shown, a number of peripheral wafer placement slots 03 are arranged around the center 02, wherein each peripheral wafer placement slot 03 can hold 5 wafers Y. Figure 1 The output per unit time of the carrier tray shown is fixed, and the space for increasing production capacity is limited. If the area of ​​the carrier tray is increased, the carrier tray will be too large and will not match the size of the pressure ring of the PVD machine. The pressure ring will not be able to hold the carrier tray, which will cause the machine to malfunction. Summary of the Invention

[0005] In view of this, the present invention provides an apparatus for LED wafer manufacturing process, which appropriately increases the size of the carrier disk while making minor modifications to the pressure ring of the PVD machine, thereby solving the problem in the prior art where increasing the area of ​​the carrier disk to improve production capacity results in the carrier disk being too large and mismatched with the size of the pressure ring of the PVD machine, causing the pressure ring to be unable to hold the carrier disk in place and the machine to malfunction.

[0006] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0007] An apparatus for LED wafer fabrication processes, comprising:

[0008] Carrier disk (1), the carrier disk (1) is provided with a wafer placement surface, the side surface (2) of the carrier disk is an inclined surface, the side surface (2) of the carrier disk and the wafer placement surface form a carrier disk tilt angle (θ1);

[0009] A pressure ring (3), the pressure ring (3) including a pressure plate part (31) and a pressure ring positioning angle (θ2);

[0010] During the LED wafer manufacturing process, the wafer (Y) is placed on the wafer placement surface, the pressure ring (3) is used to fix the carrier disk (1), the pressure ring positioning angle (θ2) is used to position the carrier disk tilt angle (θ1), and the pressing part (31) is used to press the edge (4) of the carrier disk. The shape and angle of the pressure ring positioning angle (θ2) are matched with the tilt angle (θ1) of the carrier disk.

[0011] Preferably, the wafer placement surface is provided with adjacent wafer placement slots (9); the wafer placement slots (9) include a central wafer placement slot (91) and a plurality of peripheral wafer placement slots (92); the central wafer placement slot (91) is located at the center of the wafer placement surface, and each of the peripheral wafer placement slots (92) is arranged around the central wafer placement slot (91).

[0012] Preferably, the protrusion between the central wafer placement groove (91) and the peripheral wafer placement groove (92) is the Y region (10), and the protrusion between the peripheral wafer placement groove (92) and the side surface of the carrier disk (2) is the Z region (11); the horizontal height of the bottom surface of the central wafer placement groove is H1, the horizontal height of the Y region is H2, the horizontal height of the Z region is H3, and the wafer height is H4, then H1 < H2 ≤ H1 + H4, and H2 < H3.

[0013] Preferably, the horizontal height difference between H2 and H1 ranges from 20µm to 650µm, including the endpoint values.

[0014] Preferably, each of the wafer placement slots (9) is matched with the size of the wafer (Y); seven wafers (Y) can be placed on the wafer placement surface.

[0015] Preferably, the width (W1) of the side of the carrier in the vertical direction ranges from 1 mm to 3 mm, including the endpoint values.

[0016] Preferably, the width of the carrier disk edge (W2) ranges from 2 mm to 10 mm, including the endpoint values.

[0017] Preferably, the tilt angle (θ1) of the carrier disk ranges from 95° to 150°, excluding the endpoint values.

[0018] Preferably, the pressure ring (3) further includes a ring body (32) and a positioning ring (33), wherein the ring body (32), the positioning ring (33) and the pressing part (31) extend sequentially toward the center (34) of the pressure ring to form a continuous annular surface with different inner diameters.

[0019] Preferably, the included angle between the positioning ring (33) and the pressing part (31) forms the pressing ring positioning angle (θ2).

[0020] The above technical solution achieves the following results:

[0021] 1. The apparatus for LED wafer fabrication provided by the present invention sets the side of the carrier disk as an inclined surface, forming a carrier disk inclination angle with the wafer placement surface. A pressure ring is used to fix the carrier disk, a pressure ring positioning angle is used to position the carrier disk inclination angle, and a pressing part is used to press the edge of the carrier disk. The shape and angle of the pressure ring positioning angle are matched with the carrier disk inclination angle. While appropriately increasing the size of the carrier disk, it avoids the problem that the pressure ring cannot press the carrier disk due to the carrier disk being too large, so that the machine can work normally. It also avoids the carrier disk from easily deviating from the fixing of the pressure ring during the friction process between the carrier disk and the pressure ring in the cavity. This effectively ensures the life of the carrier disk and the wafer processing yield, and realizes stable large-scale mass production.

[0022] 2. Furthermore, by setting adjacent wafer placement slots on the wafer placement surface of the carrier disk, the wafer placement slot area is reduced and the number of wafer placement slots is increased while still being able to accommodate wafers of the original size, thereby improving production capacity.

[0023] 3. Further, the protrusion between the central wafer placement slot and the peripheral wafer placement slot is the Y region, and the protrusion between the peripheral wafer placement slot and the side of the carrier is the Z region. The horizontal height of the bottom surface of the central wafer placement slot is H1, the horizontal height of the Y region is H2, the horizontal height of the Z region is H3, and the wafer height is H4. In the cavity of the physical vapor deposition equipment, during the deposition of mixed gas, the gas is sputtered from the sputtering device at the top of the cavity to the carrier with the airflow, and then diffuses outward from the middle of the carrier. By setting H1 < H2 ≤ H1 + H4, and H2 < H3, the Y region can not only position the wafer, but also make it easier for the gas to diffuse outward to the peripheral wafer placement slot, avoiding the problems of insufficient evaporation and uneven wafer surface near the edge of the carrier, thus improving the wafer yield.

[0024] 4. Furthermore, by setting the width of the carrier disk edge to 2mm to 10mm, including the endpoint value, the carrier disk can be fully utilized and the carrier disk utilization rate can be improved. At the same time, the edge of the carrier disk and the pressing part can have sufficient contact surface, reducing the risk that the carrier disk surface will detach from the pressing ring due to the contact surface being too small, causing the wafer to be outside the sputtering area and affecting the wafer yield.

[0025] 5. Furthermore, the dimensions of each wafer placement slot are matched with the wafer dimensions; seven wafers can be placed on the wafer placement surface, increasing the number of wafers that can be placed on the carrier from five to seven, thereby increasing the production capacity by 40% per unit time. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0027] Figure 1 This is a top view of an existing carrier disk;

[0028] Figure 2 This is a schematic diagram of a wafer;

[0029] Figure 3 This is a schematic diagram of an apparatus for LED wafer fabrication provided in Embodiment 1 of the present invention;

[0030] Figure 4 for Figure 3 A magnified view of a portion at point A shown;

[0031] Figure 5 This is a top view schematic diagram of a carrier disk for an apparatus used in LED wafer fabrication process according to Embodiment 2 of the present invention;

[0032] Figure 6 for Figure 5 The diagram shows a cross-section of the carrier disk along line EE.

[0033] Figure 7 This is a top view of a carrier disk of an apparatus for LED wafer fabrication provided in Embodiment 3 of the present invention;

[0034] Figure 8 This is a bottom view of the pressure ring of an apparatus for LED wafer fabrication provided in Embodiment 4 of the present invention;

[0035] Figure 9 for Figure 8 The diagram shows a cross-sectional view of the pressure ring along line FF.

[0036] Explanation of symbols in the diagram:

[0037] 01, carrier disk; 02, center; 03, peripheral wafer placement slot; Y, wafer.

[0038] 1. Carrier tray; 2. Carrier tray side; 3. Pressure ring; 31. Pressing section; 32. Ring body; 33. Positioning ring; 34. Pressure ring center; 4. Carrier tray edge; 5. Cavity; 6. Base; 7. Heating plate; 8. Sputtering device; 9. Wafer placement slot; 91. Central wafer placement slot; 92. Peripheral wafer placement slot; 10. Y region; 11. Z region; 12. Pick-and-place port; 13. Stress relief port; W1. Width of carrier tray side in the vertical direction; W2. Width of carrier tray edge; H1. Horizontal height of the bottom surface of the central wafer placement slot; H2. Horizontal height of Y region; H3. Horizontal height of Z region; H4. Wafer height; θ1. Carrier tray tilt angle; θ2. Pressure ring positioning angle. Detailed Implementation

[0039] To make the content of this invention clearer, the following description, in conjunction with the accompanying drawings, further illustrates the invention. This invention is not limited to this specific embodiment. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention.

[0040] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0041] Secondly, this application provides a detailed description in conjunction with schematic diagrams. When detailing the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not adhering to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In addition, actual fabrication should include three-dimensional spatial dimensions of length, width, and depth.

[0042] Example 1

[0043] This embodiment provides an apparatus for LED wafer fabrication processes, such as... Figure 3 , Figure 4 As shown, it includes:

[0044] Carrier disk 1, a wafer placement surface is provided on carrier disk 1, and the side surface 2 of carrier disk is inclined surface, forming a carrier disk tilt angle θ1 with the wafer placement surface;

[0045] Pressure ring 3, the pressure ring 3 includes a pressing part 31 and a pressure ring positioning angle θ2;

[0046] During the LED wafer manufacturing process, wafer Y is placed on the wafer placement surface, pressure ring 3 is used to fix the carrier tray 1, pressure ring positioning angle θ2 is used to position the carrier tray tilt angle θ1, and pressing part 31 is used to press the edge 4 of the carrier tray. The shape and angle of the pressure ring positioning angle θ2 and the carrier tray tilt angle θ1 are matched.

[0047] It should be noted that during the LED wafer fabrication process, within the cavity 5 of the physical vapor deposition equipment, the base 6 is used to support the carrier disk 1, and the carrier disk 1 is used to support the wafer Y (not shown in the figure). There is a heating plate 7 between the base 6 and the carrier disk 1, which is used to heat the carrier disk 1. The pressure ring 3 is used to fix the carrier disk 1, and the pressure ring positioning angle θ2 is used to position the tilt angle θ1 of the carrier disk. The pressing part 31 is used to press the edge 4 of the carrier disk. The sputtering device 8 is located at the top of the cavity and is used to support the target material. The material of the target material is selected according to the process requirements. For example, when it is necessary to deposit an AlN thin film, the target material can be aluminum. The mixed gas generated after the target is sputtered is deposited onto the surface of the wafer Y to form a thin film.

[0048] As can be seen from the above technical solution, the embodiments of the present invention provide an apparatus for LED wafer fabrication. By setting the side of the carrier disk as an inclined surface, the side of the carrier disk and the wafer placement surface form a carrier disk inclination angle. The pressure ring is used to fix the carrier disk, the pressure ring positioning angle is used to position the carrier disk inclination angle, and the pressing part is used to press the edge of the carrier disk. The shape and angle of the pressure ring positioning angle are matched with the carrier disk inclination angle. While appropriately increasing the size of the carrier disk, it avoids the problem that the pressure ring cannot press the carrier disk due to the carrier disk being too large, so that the machine can work normally. It also avoids the carrier disk from easily deviating from the fixing of the pressure ring during the friction process between the carrier disk and the pressure ring in the cavity. This can effectively ensure the life of the carrier disk and the wafer processing yield, and realize stable large-scale mass production.

[0049] Example 2

[0050] like Figure 5 , Figure 6 As shown, an apparatus for LED wafer fabrication differs from the first embodiment described above in that wafer placement surfaces are provided with adjacent wafer placement slots 9; the wafer placement slots 9 include a central wafer placement slot 91 and a plurality of peripheral wafer placement slots 92; the central wafer placement slot 91 is located at the center of the wafer placement surface, and each peripheral wafer placement slot 92 is arranged around the central wafer placement slot 91.

[0051] Optionally, in this embodiment, the bottom surfaces of each wafer placement slot 9 are on the same horizontal plane.

[0052] Optionally, in this embodiment, the width W1 of the side of the carrier disk in the vertical direction ranges from 1 mm to 3 mm, including the endpoint values.

[0053] Optionally, in this embodiment, the disk edge width W2 ranges from 2 mm to 10 mm, including the endpoint values.

[0054] Optionally, in this embodiment, the tray tilt angle θ1 ranges from 95° to 150°, excluding the endpoint values.

[0055] As can be seen from the above technical solutions, the embodiments of the present invention provide a carrier tray for an apparatus for LED wafer manufacturing process. By setting adjacent wafer placement slots on the wafer placement surface of the carrier tray, the wafer placement slot area is reduced and the number of wafer placement slots is increased while still being able to place wafers of the original size, thereby improving production capacity.

[0056] Furthermore, by setting the width of the carrier disk edge to 2mm to 10mm, including the endpoint value, the carrier disk can be fully utilized and the carrier disk utilization rate can be improved. At the same time, the edge of the carrier disk and the pressing part can have sufficient contact surface, reducing the risk that the carrier disk surface will detach from the pressing ring due to the contact surface being too small, causing the wafer to be outside the sputtering area and affecting the wafer yield.

[0057] Example 3

[0058] like Figure 7 As shown, an apparatus for LED wafer fabrication differs from the above-described embodiment two in that the protrusion between the central wafer placement slot 91 and the peripheral wafer placement slot 92 is the Y region 10, and the protrusion between the peripheral wafer placement slot 92 and the side surface 2 of the carrier disk is the Z region 11; the horizontal height of the bottom surface of the central wafer placement slot is H1, the horizontal height of the Y region is H2, the horizontal height of the Z region is H3, and the wafer height is H4, then H1 < H2 ≤ H1 + H4, and H2 < H3.

[0059] It should be noted that in this embodiment, the edge 4 of the carrier disk (not shown in the figure) is within the area of ​​region Z 11.

[0060] Optionally, in this embodiment, the horizontal height difference between H2 and H1 ranges from 20µm to 650µm, including the endpoint values.

[0061] Optionally, in this embodiment, a pick-and-place port 12 is provided on the edge of each wafer placement slot 9, and the opening length of the pick-and-place port 12 ranges from 4mm to 20mm, excluding the endpoint value.

[0062] Optionally, in this embodiment, the bottom surface of the pick-and-place port 12 is on the same horizontal plane as the bottom surface of each wafer placement slot 9.

[0063] It should be noted that this embodiment does not limit the shape of the pick-and-place port 12, as long as it is convenient for the operator to place and pick up the wafer.

[0064] Optionally, in this embodiment, the bottom surface of the groove of the wafer placement groove 9 is horizontally arranged; at the junction of each wafer placement groove 9, a stress relief port 13 is provided; the bottom surface of the stress relief port 13 is on the same horizontal plane as the bottom surface of each wafer placement groove 9.

[0065] Optionally, in this embodiment, the opening length of the stress relief port 13 ranges from 0 mm to 20 mm, excluding the endpoint value.

[0066] Optionally, in this embodiment, each wafer placement slot 9 is matched with the size of the wafer Y; seven wafers Y can be placed on the wafer placement surface.

[0067] Optionally, in this embodiment, the wafer Y is 4 inches in size, with a diameter ranging from 99.8 mm to 100.2 mm, including endpoint values.

[0068] Optionally, in this embodiment, the wafer placement surface is circular with a diameter of 315 mm;

[0069] Optionally, in this embodiment, the wafer placement groove 9 is circular, with a diameter ranging from 99.8 mm to 100.8 mm, excluding the endpoint values.

[0070] As can be seen from the above technical solution, the present invention provides a carrier disk for an apparatus for LED wafer fabrication. The protrusion between the central wafer placement slot and the peripheral wafer placement slot is the Y region, and the protrusion between the peripheral wafer placement slot and the side of the carrier disk is the Z region. The horizontal height of the bottom surface of the central wafer placement slot is H1, the horizontal height of the Y region is H2, the horizontal height of the Z region is H3, and the wafer height is H4. In the cavity of the physical vapor deposition equipment, when the mixed gas is deposited, the gas is sputtered from the sputtering device at the top of the cavity to the carrier disk with the airflow, and then diffuses outward from the middle of the carrier disk. By setting H1 < H2 ≤ H1 + H4, and H2 < H3, the Y region can not only position the wafer, but also make it easier for the gas to diffuse outward to the peripheral wafer placement slot, avoiding the problems of insufficient evaporation and uneven wafer surface near the edge of the carrier disk, thus improving the wafer yield.

[0071] Furthermore, by setting pick-and-place ports along the edge of the wafer placement slot, wafers can be easily picked up and placed, thus improving efficiency.

[0072] Furthermore, by providing stress relief ports at the junctions of each wafer placement tank, stress can be effectively released, preventing the carrier disk surface from cracking due to thermal stress during the evaporation process when the gap between the wafer placement tank and the wafer is small, thus improving the carrier disk life.

[0073] In addition, each wafer placement slot is matched with the size of the wafer; seven wafers Y can be placed on the wafer placement surface, increasing the number of wafers Y placed on the carrier from five to seven, thereby increasing the production capacity by 40% per unit time.

[0074] Example 4

[0075] like Figure 8 , Figure 9As shown, an apparatus for LED wafer fabrication differs from the first embodiment described above in that the pressure ring 3 further includes a ring body 32 and a positioning ring 33. The ring body 32, the positioning ring 33, and the pressing portion 31 extend sequentially toward the center 34 of the pressure ring to form a continuous annular surface with different inner diameters.

[0076] Optionally, in this embodiment, the inner diameter of the ring body is greater than the inner diameter of the positioning ring, which is greater than the inner diameter of the tablet pressing part.

[0077] Optionally, in this embodiment, the included angle between the positioning ring 33 and the pressing portion 31 forms the pressing ring positioning angle θ2.

[0078] Optionally, in this embodiment, the ring 32, the positioning ring 33, and the tablet pressing part 31 are integrally formed.

[0079] Optionally, in this embodiment, the material of the pressure ring 3 includes quartz.

[0080] Optionally, in this embodiment, the inner diameter of the tablet pressing part is 308 mm, and the inner diameter of the positioning ring ranges from 318 mm to 325 mm, including the endpoint value.

[0081] In summary, the above technical solution achieves the following results:

[0082] 1. The device for LED wafer fabrication provided in this embodiment sets the side of the carrier disk as an inclined surface, forming a carrier disk inclination angle with the wafer placement surface. A pressure ring is used to fix the carrier disk, a pressure ring positioning angle is used to position the carrier disk inclination angle, and a pressing part is used to press the edge of the carrier disk. The shape and angle of the pressure ring positioning angle are matched with the carrier disk inclination angle. While appropriately increasing the size of the carrier disk, it avoids the problem that the pressure ring cannot press the carrier disk due to the carrier disk being too large, so that the machine can work normally. It also avoids the carrier disk from easily deviating from the fixing of the pressure ring during the friction process between the carrier disk and the pressure ring in the cavity. This can effectively ensure the life of the carrier disk and the wafer processing yield, and achieve stable large-scale mass production.

[0083] 2. Furthermore, by setting adjacent wafer placement slots on the wafer placement surface of the carrier disk, the wafer placement slot area is reduced and the number of wafer placement slots is increased while still being able to accommodate wafers of the original size, thereby improving production capacity.

[0084] 3. Further, the protrusion between the central wafer placement slot and the peripheral wafer placement slot is the Y region, and the protrusion between the peripheral wafer placement slot and the side of the carrier is the Z region. The horizontal height of the bottom surface of the central wafer placement slot is H1, the horizontal height of the Y region is H2, the horizontal height of the Z region is H3, and the wafer height is H4. In the cavity of the physical vapor deposition equipment, during the deposition of mixed gas, the gas is sputtered from the sputtering device at the top of the cavity to the carrier with the airflow, and then diffuses outward from the middle of the carrier. By setting H1 < H2 ≤ H1 + H4, and H2 < H3, the Y region can not only position the wafer, but also make it easier for the gas to diffuse outward to the peripheral wafer placement slot, avoiding the problems of insufficient evaporation and uneven wafer surface near the edge of the carrier, thus improving the wafer yield.

[0085] 4. Furthermore, by setting the width of the carrier disk edge to 2mm to 10mm, including the endpoint value, the carrier disk can be fully utilized and the carrier disk utilization rate can be improved. At the same time, the edge of the carrier disk and the pressing part can have sufficient contact surface, reducing the risk that the carrier disk surface will detach from the pressing ring due to the contact surface being too small, causing the wafer to be outside the sputtering area and affecting the wafer yield.

[0086] 5. Furthermore, the dimensions of each wafer placement slot are matched with the wafer dimensions; seven wafers can be placed on the wafer placement surface, increasing the number of wafers that can be placed on the carrier from five to seven, thereby increasing the production capacity by 40% per unit time.

[0087] 6. Furthermore, by providing stress relief ports at the junctions of each of the wafer placement slots, stress can be effectively released, preventing the carrier disk surface from cracking due to thermal stress during the evaporation process when the gap between the wafer placement slot and the wafer is small, thereby improving the carrier disk life.

[0088] 7. Furthermore, by setting pick-and-place ports along the edge of the wafer placement slot, wafers can be easily picked up and placed, thus improving efficiency.

[0089] Those skilled in the art should understand that, in the disclosure of this invention, the terms "lateral", "longitudinal", "upper", "lower", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the above terms should not be construed as limiting this invention.

[0090] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0091] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An apparatus for LED wafer fabrication processes, characterized in that, include: Carrier disk (1), the carrier disk (1) has a wafer placement surface, the side surface (2) of the carrier disk is an inclined surface, and the side surface (2) of the carrier disk and the wafer placement surface form a carrier disk tilt angle (θ1). The pressure ring (3) includes a pressure plate part (31), a pressure ring positioning angle (θ2), a ring body (32), and a positioning ring (33). During the LED wafer manufacturing process, the wafer (Y) is placed on the wafer placement surface, the pressure ring (3) is used to fix the carrier disk (1), the pressure ring positioning angle (θ2) is used to position the carrier disk tilt angle (θ1), and the pressing part (31) is used to press the edge (4) of the carrier disk. The shape and angle of the pressure ring positioning angle (θ2) are matched with the tilt angle (θ1) of the carrier disk. The wafer placement slot (9) includes a central wafer placement slot (91) and several peripheral wafer placement slots (92); the protrusion between the central wafer placement slot (91) and the peripheral wafer placement slots (92) is the Y region (10), and the protrusion between the peripheral wafer placement slots (92) and the side surface of the carrier disk (2) is the Z region (11); the horizontal height of the bottom surface of the central wafer placement slot is H1, the horizontal height of the Y region is H2, the horizontal height of the Z region is H3, and the wafer height is H4. Then H1 < H2 ≤ H1 + H4, and H2 < H3.

2. The apparatus for LED wafer fabrication according to claim 1, characterized in that: The wafer placement surface is provided with adjacent wafer placement slots (9); the central wafer placement slot (91) is located at the center of the wafer placement surface, and each of the peripheral wafer placement slots (92) is arranged around the central wafer placement slot (91).

3. The apparatus for LED wafer fabrication according to claim 1, characterized in that: The horizontal height difference between H2 and H1 ranges from 20µm to 650µm, including the endpoint values.

4. The apparatus for LED wafer fabrication process according to claim 2, characterized in that: Each of the wafer placement slots (9) is matched with the size of the wafer (Y); seven wafers (Y) can be placed on the wafer placement surface.

5. The apparatus for LED wafer fabrication according to claim 1, characterized in that: The width (W1) of the side of the carrier in the vertical direction ranges from 1 mm to 3 mm, including the endpoint values.

6. The apparatus for LED wafer fabrication process according to claim 1, characterized in that: The tray edge width (W2) ranges from 2 mm to 10 mm, including the endpoint values.

7. The apparatus for LED wafer fabrication according to claim 1, characterized in that: The tray tilt angle (θ1) ranges from 95° to 150°, excluding the endpoint values.

8. The apparatus for LED wafer fabrication process according to claim 1, characterized in that: The ring body (32), the positioning ring (33) and the pressing part (31) extend sequentially toward the center (34) of the pressing ring to form a continuous annular surface with different inner diameters.

9. The apparatus for LED wafer fabrication process according to claim 1, characterized in that: The included angle between the positioning ring (33) and the pressing part (31) forms the pressing ring positioning angle (θ2).

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