Semiconductor process method and semiconductor process equipment

Abstract

The present invention provides a semiconductor process method, which is applied to semiconductor process equipment. The semiconductor process method includes: after the current wafer processing task is completed, determining the current film thickness accumulation parameter of at least one cleaning mode; for any cleaning mode, when the film thickness accumulation parameter of the cleaning mode reaches a preset threshold corresponding to the cleaning mode, executing the chamber cleaning task corresponding to the cleaning mode. The semiconductor process method provided by the present invention can automatically determine the film thickness accumulation parameter each time the equipment completes a wafer processing task, and when the film thickness accumulation parameter of any cleaning mode reaches the corresponding preset threshold, automatically control the semiconductor process equipment to execute the chamber cleaning task corresponding to the cleaning mode, thereby automatically cleaning the reaction chamber, reducing film thickness recording errors, reducing labor costs, and saving equipment maintenance time. The present invention also provides a semiconductor process equipment.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor process equipment, and in particular, to a semiconductor process method and a semiconductor process equipment for implementing the semiconductor process method. Background Art

[0002] In an automated semiconductor production line, the control system of semiconductor process equipment (e.g., a vertical heat treatment furnace) typically controls semiconductor process components (e.g., a reaction chamber, a robot, etc.) on a job-by-job basis to complete the semiconductor process. That is, the control system executes the semiconductor process task by task, and the task information for each wafer processing task includes flow information from the entire processing sequence from when the wafer is transferred into the reaction chamber to when it is transferred out of the process chamber after the process is completed.

[0003] For example, wafer processing task information may include a load map recipe and a process recipe. The load map recipe includes the wafer transmission path and the location distribution of each workstation. The process recipe is a set of instructions related to the wafer processing process. Users can edit each process step in the process recipe to set the necessary control conditions for wafer processing, such as temperature, gas, pressure, time, etc., so that the desired thin film can be formed on the surface of the wafer.

[0004] As the number of wafer processing tasks performed by semiconductor process equipment gradually increases, the thickness of the film deposited inside the reaction chamber (e.g., the furnace tube of a vertical heat treatment furnace) also increases. Therefore, in order to prevent the film from affecting the normal progress of the semiconductor process, it is usually necessary to clean the inside of the reaction chamber at regular intervals to ensure the qualified rate of wafer film formation and the service life of the equipment.

[0005] Specifically, when the staff observes that the thickness of the film deposited inside the reaction chamber is relatively thick, they manually operate the control system so that after completing the current wafer processing task, the control system controls the semiconductor process components to perform the chamber cleaning task, and then manually operate the control system again to continue controlling the semiconductor process components to perform the next wafer processing task.

[0006] The information for the chamber cleaning task may include a purge recipe, which specifically includes a series of instructions for raising the wafer boat to the top of the furnace tube, sealing the furnace tube, and introducing a special gas into the closed furnace tube environment, thereby physically or chemically removing and discharging impurities from the inner wall of the furnace tube and the surface of the wafer boat.

[0007] However, in the existing technology, not only does the thickness of the thin film deposited inside the reaction chamber need to be manually observed and recorded, but the operator is also required to manually operate the control system to change the task status before and after the chamber cleaning task. This is not only prone to large human recording errors, but also requires a lot of manpower and manual operation time, extending downtime (DownTime) and maintenance time (MaintenanceTime), affecting the production rhythm of the semiconductor process production line.

[0008] Therefore, how to provide a semiconductor process method and semiconductor process equipment that can automatically clean a reaction chamber has become a technical problem that needs to be solved urgently in this field. Summary of the Invention

[0009] The present invention aims to provide a semiconductor process method and a semiconductor process equipment, wherein the semiconductor process method can realize automatic cleaning of a reaction chamber.

[0010] To achieve the above-mentioned object, as one aspect of the present invention, a semiconductor process method is provided, which is applied to a semiconductor process device. The semiconductor process method comprises:

[0011] After the current wafer processing task is completed, determining a current film thickness accumulation parameter of at least one cleaning mode;

[0012] For any of the cleaning modes, when the film thickness accumulation parameter of the cleaning mode reaches a preset threshold corresponding to the cleaning mode, the chamber cleaning task corresponding to the cleaning mode is executed.

[0013] Optionally, determining the film thickness accumulation parameter of at least one cleaning mode includes:

[0014] Adding the film thickness parameter corresponding to the current wafer processing task to the film thickness cumulative parameter of each cleaning mode history to obtain the current film thickness cumulative parameter of each cleaning mode;

[0015] The semiconductor method further comprises:

[0016] After the chamber cleaning task is executed, the film thickness accumulation parameter of the cleaning mode corresponding to the chamber cleaning task is cleared.

[0017] Optionally, there are multiple cleaning modes, and each cleaning mode has a corresponding priority;

[0018] The semiconductor process method further includes:

[0019] When the film thickness accumulation parameters of a plurality of the cleaning modes simultaneously reach respective corresponding preset thresholds, the plurality of chamber cleaning tasks corresponding to the plurality of cleaning modes are sequentially executed according to the priorities of the plurality of cleaning modes.

[0020] Optionally, the semiconductor process method further includes:

[0021] When the film thickness accumulation parameter of any of the cleaning modes reaches the corresponding preset threshold, a cleaning alarm message corresponding to the cleaning mode is issued.

[0022] Optionally, for any of the cleaning modes, when the film thickness accumulation parameter of the cleaning mode reaches a preset threshold corresponding to the cleaning mode, executing the chamber cleaning task corresponding to the cleaning mode specifically includes:

[0023] When the film thickness accumulation parameter of any cleaning mode reaches the corresponding preset threshold, the chamber cleaning task corresponding to the cleaning mode is created, and the chamber cleaning task is inserted between the current wafer processing task and the next wafer processing task in the task queue.

[0024] Optionally, the chamber cleaning task includes a cleaning process recipe corresponding to the cleaning mode;

[0025] The performing of the chamber cleaning task corresponding to the cleaning mode includes:

[0026] Obtaining the chamber cleaning task;

[0027] The semiconductor process equipment is controlled to clean its reaction chamber according to the cleaning process recipe in the chamber cleaning task.

[0028] As a second aspect of the present invention, a semiconductor process equipment is provided, comprising a semiconductor process component and a control system, wherein the control system is used to control the semiconductor process component to perform a semiconductor process, wherein the control system can implement the semiconductor process method described above.

[0029] Optionally, the control system includes a host computer and a control component, wherein the host computer is configured to control the semiconductor process component to perform multiple wafer processing tasks in sequence according to a task queue in the task information based on the task information stored in the host computer through the control component;

[0030] The control component is further configured to, after the current wafer processing task is completed, add the film thickness parameter corresponding to the current wafer processing task to the film thickness cumulative parameter of each cleaning mode history to obtain the current film thickness cumulative parameter of each cleaning mode; obtain the chamber cleaning task created by the host computer, and control the semiconductor process component to execute the chamber cleaning task according to the notification of the host computer; and, after the semiconductor process component executes the chamber cleaning task, clear the film thickness cumulative parameter of the cleaning mode corresponding to the chamber cleaning task to zero;

[0031] The host computer is also used to create the chamber cleaning task corresponding to any cleaning mode when the film thickness accumulation parameter of the cleaning mode reaches the corresponding preset threshold, and insert the chamber cleaning task into the task queue between the current wafer processing task and the next wafer processing task.

[0032] Optionally, there are multiple cleaning modes, and each cleaning mode has a corresponding priority;

[0033] The host computer is also used to create the chamber cleaning tasks corresponding to the multiple cleaning modes when the film thickness accumulation parameters of the multiple cleaning modes simultaneously reach the corresponding preset thresholds, and insert the multiple chamber cleaning tasks into the task queue between the current wafer processing task and the next wafer processing task in the order of the priority.

[0034] Optionally, the control component is further configured to issue a cleaning alarm message corresponding to any cleaning mode when the film thickness accumulation parameter of any cleaning mode reaches the corresponding preset threshold.

[0035] In the semiconductor process method and semiconductor process equipment provided by the present invention, the control system of the semiconductor process equipment can automatically determine the film thickness accumulation parameter each time the equipment completes a wafer processing task, and when the film thickness accumulation parameter of any cleaning mode reaches the corresponding preset threshold value, automatically control the semiconductor process equipment to perform the chamber cleaning task corresponding to the cleaning mode, thereby realizing automatic cleaning of the reaction chamber when the accumulated film thickness in the reaction chamber is large. This process does not require human participation, thereby reducing the recording error of the film thickness accumulation parameter, reducing labor costs, saving equipment maintenance time, and improving the production efficiency of the semiconductor production line. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the following detailed description, they are used to explain the present invention but do not constitute a limitation of the present invention. In the accompanying drawings:

[0037] Figure 1 is a schematic flow chart of a semiconductor process method provided by an embodiment of the present invention;

[0038] Figures 2 to 4 This is a functional schematic diagram of a host computer and control components in a semiconductor process equipment provided by an embodiment of the present invention;

[0039] Figure 5 This is a schematic flow chart of a semiconductor process method provided by one embodiment of the present invention;

[0040] Figure 6It is a flow chart of a semiconductor process method provided by another embodiment of the present invention. DETAILED DESCRIPTION

[0041] The following describes the specific embodiments of the present invention in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention and are not intended to limit the present invention.

[0042] In order to solve the above technical problems, as one aspect of the present invention, a semiconductor process method is provided, which is applied to semiconductor process equipment, such as Figure 5 As shown, the semiconductor process method includes:

[0043] Step S1: After the current wafer processing task is completed, determining the current film thickness accumulation parameter of at least one cleaning mode;

[0044] Step S2: For any cleaning mode, when the cumulative film thickness parameter of the cleaning mode reaches a preset threshold corresponding to the cleaning mode, the chamber cleaning task corresponding to the cleaning mode is executed.

[0045] It should be noted that the film thickness accumulation parameter increases with the increase in the number of wafers processed by the semiconductor process equipment. It can be recorded based on multiple reference quantities, as long as the reference quantity can reflect the usage of the reaction chamber. For example, the film thickness accumulation parameter can be the cumulative value of multiple parameters such as the number of specified semiconductor processes, the thickness of the film deposited on the wafer surface during the semiconductor process, and the idle time.

[0046] The semiconductor process method provided by the present invention can automatically determine the film thickness accumulation parameter each time the equipment completes a wafer processing task, and when the film thickness accumulation parameter of any cleaning mode reaches the corresponding preset threshold value, automatically control the semiconductor process equipment to perform the chamber cleaning task corresponding to the cleaning mode, thereby realizing automatic cleaning of the reaction chamber when the accumulated film thickness in the reaction chamber is large. This process does not require human participation, thereby reducing the recording error of the film thickness accumulation parameter, reducing labor costs, saving equipment maintenance time, and improving the production efficiency of the semiconductor production line.

[0047] As an optional embodiment of the present invention, the corresponding film thickness accumulation parameter can be reset to zero after each chamber cleaning task is inserted, so that the film thickness accumulation parameter itself can directly reflect its growth amount since the last chamber cleaning task. Specifically, Figure 6 As shown:

[0048] The step of determining the film thickness accumulation parameter of at least one cleaning mode in step S1 specifically includes:

[0049] The film thickness parameter corresponding to the current wafer processing task is added to the film thickness accumulation parameter of each cleaning mode history to obtain the current film thickness accumulation parameter of each cleaning mode.

[0050] The semiconductor process method further includes: step S3, after executing the chamber cleaning task, clearing the film thickness accumulation parameter of the cleaning mode corresponding to the chamber cleaning task.

[0051] In order to improve the adaptability of semiconductor process equipment to different semiconductor processes, as a preferred embodiment of the present invention, there are multiple cleaning modes, that is, the same semiconductor process equipment can choose to perform multiple chamber cleaning tasks, and perform separate film thickness accumulation parameter calculations for each chamber cleaning task. When the film thickness accumulation parameter corresponding to each chamber cleaning task reaches the corresponding preset threshold, the semiconductor process equipment is controlled to perform the chamber cleaning task.

[0052] For example, optionally, the cleaning mode corresponding to the semiconductor process equipment includes a first cleaning mode and a second cleaning mode, the preset threshold corresponding to the first cleaning mode is 400 nm, and the preset threshold corresponding to the second cleaning mode is 600 nm.

[0053] like Figure 1 As shown, the cleaning mode can be represented as AutoPurge-Mode[Index], where [Index] represents the code of each mode. For example, Arabic numerals can be used for numbering. The first cleaning mode can be represented as AutoPurge-Mode1, and the second cleaning mode can be represented as AutoPurge-Mode2. For each cleaning mode, the film thickness accumulation parameter C is calculated independently and compared with its preset threshold value M(Max).

[0054] For example, Figure 1As shown, for the first cleaning mode AutoPurge-Mode1, after the wafer loading (Charge) process and the process recipe (Process Recipe) process of the current wafer processing task ABatch are completed (i.e., when the current wafer processing task is completed), the film thickness parameter 300nm corresponding to the wafer processing task A Batch is increased to the film thickness cumulative parameter 100nm corresponding to the first cleaning mode AutoPurge-Mode1 before the wafer processing task A Batch, and the current film thickness cumulative parameter corresponding to the first cleaning mode AutoPurge-Mode1 of the semiconductor process equipment is 400nm, which has reached the preset threshold value of 400nm for the first cleaning mode AutoPurge-Mode1. Therefore, it can be determined that the first chamber cleaning task AutoPurgeJob1 corresponding to the first cleaning mode AutoPurge-Mode1 needs to be executed after the wafer unloading (Discharge) process of the current wafer processing task A Batch (i.e., after the task is completed) and before the next wafer processing task B Batch begins;

[0055] Likewise, if Figure 1 As shown, for the second cleaning mode AutoPurge-Mode2, after the wafer loading step and process recipe execution of the current wafer processing task ABatch are completed, the film thickness parameter 300nm corresponding to the wafer processing task A Batch is increased to the cumulative film thickness parameter 300nm corresponding to the second cleaning mode AutoPurge-Mode2 before the wafer processing task A Batch. The resulting cumulative film thickness parameter corresponding to the second cleaning mode AutoPurge-Mode2 of the semiconductor process equipment is 600nm, which has reached the preset threshold of 600nm for the second cleaning mode AutoPurge-Mode2. Therefore, it is determined that the second chamber cleaning task AutoPurgeJob2 corresponding to the second cleaning mode AutoPurge-Mode2 needs to be executed after the wafer unloading step of the current wafer processing task A Batch and before the start of the next wafer processing task B Batch.

[0056] As an optional embodiment of the present invention, each cleaning mode has a corresponding priority level, and the semiconductor process method further includes:

[0057] When the film thickness accumulation parameters C of multiple cleaning modes simultaneously reach their respective preset thresholds M, multiple chamber cleaning tasks AutoPurgeJob corresponding to the multiple cleaning modes are executed in sequence according to the priority Level of the multiple cleaning modes (and then the next wafer processing task (B Batch) is executed).

[0058] Optionally, the smaller the priority Level value, the higher the priority of the corresponding chamber cleaning task AutoPurgeJob. Figure 1 As shown, the priority level of the first cleaning mode AutoPurge-Mode1 is 2, and the priority level of the second cleaning mode AutoPurge-Mode2 is 5. When the two film thickness accumulation parameters C corresponding to the two cleaning modes simultaneously reach the corresponding preset threshold value M after performing the same wafer processing task (A Batch), the chamber cleaning task AutoPurgeJob1 of the first cleaning mode AutoPurge-Mode1 is executed first, and then the chamber cleaning task AutoPurgeJob2 of the second cleaning mode AutoPurge-Mode2 is executed.

[0059] In order to facilitate operators to promptly know the cleaning information of semiconductor process equipment so that operators can promptly replenish the gas and other consumables used to clean the reaction chamber, as a preferred embodiment of the present invention, the method further includes:

[0060] When the film thickness accumulation parameter C of any cleaning mode reaches the corresponding preset threshold M, a cleaning alarm message corresponding to the cleaning mode is posted.

[0061] For example, the cleaning alarm information may include a prompt sentence "Alarm AutoPurge Max FilmThickness Reached" (i.e., prompting that the film thickness accumulation parameter C of a certain cleaning mode has reached a preset threshold value M), and may also include the name of the cleaning mode in which the film thickness accumulation parameter C has reached the preset threshold value M, for example, Figure 1 As shown, when the film thickness accumulation parameter C of the two cleaning modes reaches the preset threshold value M, a prompt "Index: Mode 1 (ie, the first cleaning mode AutoPurge-Mode 1), Mode 2 (ie, the second cleaning mode AutoPurge-Mode 2)" is displayed.

[0062] In order to facilitate operators to collect historical data of the machine, as a preferred embodiment of the present invention, the method further includes:

[0063] After the current wafer processing task is completed, the film thickness parameter corresponding to the wafer processing task is added to the total cumulative film thickness parameter T (Total) corresponding to each cleaning mode. The total cumulative film thickness parameter T represents the continuous cumulative film thickness value of the equipment. It is not automatically reset after the chamber cleaning task is completed and requires manual reset to facilitate staff to understand the historical working status of the machine.

[0064] As an optional embodiment of the present invention, the semiconductor process equipment includes a host computer, a control component and a semiconductor process component. The host computer is used to control the semiconductor process component through the control component based on the task information stored in itself to perform multiple wafer processing tasks in sequence according to the task queue in the task information.

[0065] Specifically, if Figures 2 to 4 As shown, the host computer can be installed with an application (APP) layer, responsible for scheduling and queuing operations such as the generation, insertion, and deletion of chamber cleaning tasks, such as AutoPurgeJob. The control component can include a process module control (PMC) and an industrial automation package (IAP). The process module is responsible for interface display, user interface operation, and parameter configuration. The industrial automation package is responsible for film thickness growth logic control and the judgment logic control for the generation of chamber cleaning tasks, such as AutoPurgeJob.

[0066] As an optional embodiment of the present invention, the step of calculating the current cumulative film thickness parameters of each cleaning mode can be completed by the control component, that is, step S1 specifically includes:

[0067] The control component adds the film thickness parameter corresponding to the current wafer processing task to the film thickness accumulation parameter of each cleaning mode history to obtain the current film thickness accumulation parameter of each cleaning mode.

[0068] As an optional embodiment of the present invention, the step of inserting the chamber cleaning task AutoPurgeJob between wafer processing tasks can be completed by the host computer. Preferably, step S2 specifically includes:

[0069] When the film thickness accumulation parameter of any cleaning mode reaches the corresponding preset threshold, a chamber cleaning task corresponding to the cleaning mode is created and inserted between the current wafer processing task (A Batch) and the next wafer processing task (B Batch) in the task queue.

[0070] As an optional embodiment of the present invention, the chamber cleaning task includes a cleaning process recipe corresponding to the cleaning mode. In step S2, executing the chamber cleaning task corresponding to the cleaning mode may include:

[0071] Obtain the corresponding cleaning process formula;

[0072] The semiconductor process equipment is controlled to clean its reaction chamber according to the cleaning process recipe.

[0073] like Figure 3 、 Figure 4As shown, the steps of executing the chamber cleaning task corresponding to the cleaning mode specifically include:

[0074] The control component obtains the chamber cleaning task AutoPurgeJob created by the host computer;

[0075] After the current wafer processing task is completed, the host computer notifies the control component to start executing the chamber cleaning task AutoPurgeJob;

[0076] After receiving the notification, the control component updates the configuration information related to the machine status associated with the chamber cleaning task AutoPurgeJob (for example, the film thickness accumulation parameter C, priority Level, total accumulated film thickness parameter T, etc.), and controls the semiconductor process component to clean the reaction chamber according to the cleaning process recipe in the chamber cleaning task AutoPurgeJob.

[0077] As a second aspect of the present invention, a semiconductor process equipment is provided, including a semiconductor process component and a control system, wherein the control system is used to control the semiconductor process component to perform a semiconductor process, and the control system can implement the semiconductor process method provided in an embodiment of the present invention.

[0078] In the semiconductor process equipment provided by the present invention, the control system can automatically determine the film thickness accumulation parameter each time the equipment completes a wafer processing task, and when the film thickness accumulation parameter of any cleaning mode reaches the corresponding preset threshold, the semiconductor process equipment is automatically controlled to perform the chamber cleaning task corresponding to the cleaning mode, thereby realizing automatic cleaning of the reaction chamber when the accumulated film thickness in the reaction chamber is large. This process does not require human participation, thereby reducing the recording error of the film thickness accumulation parameter, reducing labor costs, saving equipment maintenance time, and improving the production efficiency of the semiconductor production line.

[0079] As an optional embodiment of the present invention, the control system includes a host computer and a control component, wherein the host computer is used to control the semiconductor process component to perform multiple wafer processing tasks in sequence according to the task queue in the task information based on the task information stored in the host computer through the control component;

[0080] The control component is further configured to, after the current wafer processing task is completed, add the film thickness parameter corresponding to the current wafer processing task to the historical film thickness cumulative parameter of each cleaning mode to obtain the current film thickness cumulative parameter of each cleaning mode (i.e., executing step S1); obtain the chamber cleaning task created by the host computer, and control the semiconductor process component to execute the chamber cleaning task according to the notification of the host computer (i.e., executing step S2 under the control of the host computer); and, after the semiconductor process component executes the chamber cleaning task, clear the film thickness cumulative parameter of the cleaning mode corresponding to the chamber cleaning task to zero (i.e., executing step S3);

[0081] The host computer is also used to create a chamber cleaning task corresponding to any cleaning mode when the film thickness accumulation parameter of the cleaning mode reaches the corresponding preset threshold, and insert the chamber cleaning task into the task queue between the current wafer processing task and the next wafer processing task (i.e., control the control component to execute step S2).

[0082] In an embodiment of the present invention, a host computer and a control component jointly implement the semiconductor process method provided by the embodiment of the present invention, wherein the control component is responsible for informing the host computer of the parameters involved in each cleaning mode. The host computer is responsible for controlling the execution status and process of each task performed by the control component.

[0083] Specifically, if Figures 2 to 4 As shown, the host computer can be installed with an application (APP) layer, responsible for scheduling and queuing operations such as the generation, insertion, and deletion of chamber cleaning tasks, such as AutoPurgeJob. The control component can include a process module control (PMC) and an industrial automation package (IAP). The process module is responsible for interface display, user interface operation, and parameter configuration. The industrial automation package is responsible for film thickness growth logic control and the judgment logic control for the generation of chamber cleaning tasks, such as AutoPurgeJob.

[0084] In order to improve the adaptability of semiconductor process equipment to different semiconductor processes, as a preferred embodiment of the present invention, the semiconductor process equipment corresponds to multiple cleaning modes, each cleaning mode has a corresponding priority;

[0085] The host computer is also used to create chamber cleaning tasks corresponding to multiple cleaning modes when the film thickness accumulation parameters of multiple cleaning modes reach the corresponding preset thresholds at the same time, and insert the multiple chamber cleaning tasks into the task queue between the current wafer processing task and the next wafer processing task in order of priority.

[0086] As an optional embodiment of the present invention, the chamber cleaning task AutoPurgeJob includes a cleaning process recipe (MaintenanceRecipe) corresponding to the cleaning mode AutoPurge-Mode. After obtaining the chamber cleaning task AutoPurgeJob, the control component is configured to control the semiconductor process component to clean the reaction chamber according to the cleaning process recipe in the chamber cleaning task AutoPurgeJob. Optionally, the chamber cleaning task AutoPurgeJob may also include an empty transfer recipe (LoadMap Layout).

[0087] That is, in the embodiment of the present invention, the chamber cleaning task AutoPurgeJob has a similar structure to the wafer processing task, including a cleaning process recipe (MaintenanceRecipe) corresponding to the cleaning mode and an empty transfer recipe (no wafer transfer is required during the cleaning process).

[0088] In order to facilitate operators to know the cleaning information of semiconductor process equipment in a timely manner so that operators can replenish the gas and other consumables used to clean the reaction chamber to the machine in time, as a preferred embodiment of the present invention, the control component is also used to post the cleaning alarm information corresponding to any cleaning mode when the film thickness accumulation parameter C of any cleaning mode reaches the corresponding preset threshold M.

[0089] For the convenience of technical personnel to understand, Figures 2 to 4 The figure shows a basic flow chart of the host computer (i.e., application (APP) layer) and control components (i.e., process control module (PMC) / factory automation library package (IAP) layer) jointly controlling semiconductor process components.

[0090] like Figure 2 As shown, when the current wafer processing task A Batch ends, the film thickness accumulation counter in the control component (PMC / IAP layer) obtains the film thickness parameter Thick corresponding to the wafer processing task A Batch, and adds the film thickness parameter Thick to the film thickness accumulation parameter.

[0091] like Figure 3 As shown, the control component (PMC / IAP layer) determines whether the "AutoPurge triggering when the film thickness accumulation parameter C reaches the preset threshold M" function is enabled, that is, whether the semiconductor process equipment corresponds to a cleaning mode. If the semiconductor process equipment corresponds to the first cleaning mode AutoPurge-Mode1, it determines whether the current film thickness accumulation parameter C has reached the preset threshold M. When the current film thickness accumulation parameter C reaches the preset threshold M, an alarm and event related to the need to create a chamber cleaning task AutoPurgeJob is raised.

[0092] The host computer (APP layer) obtains the cleaning process recipe (MaintenanceRecipe) in the chamber cleaning task AutoPurgeJob that needs to be created, creates the chamber cleaning task AutoPurgeJob1 according to the cleaning process recipe (MaintenanceRecipe) and an empty transfer recipe (LoadMap Layout), and notifies the control component (PMC / IAP layer) that the chamber cleaning task has been successfully created.

[0093] The control component (PMC / IAP layer) obtains the chamber cleaning task AutoPurgeJob1 from the host computer (APP layer) so that it can subsequently execute the task according to the cleaning process recipe (MaintenanceRecipe).

[0094] like Figure 3 、 Figure 4 As shown in the figure, after successfully creating the chamber cleaning task AutoPurgeJob1, the upper computer (APP layer) inserts the chamber cleaning task AutoPurgeJob1 into the task queue between the current wafer processing task A Batch and the next wafer processing task B Batch. After the wafer processing task A Batch is finished running, the chamber cleaning task AutoPurgeJob1 is automatically run and the process control module (PMC) in the control component is notified of the relevant "start" event.

[0095] The control component (PMC / IAP layer) obtains the chamber cleaning task AutoPurgeJob1 from the host computer and, upon receiving notification from the host computer (APP layer), updates the configuration information associated with the chamber cleaning task AutoPurgeJob1. It then controls the semiconductor process component to begin executing the chamber cleaning task AutoPurgeJob1. After the chamber cleaning task AutoPurgeJob1 completes, the accumulated film thickness parameter C for the first cleaning mode AutoPurge-Mode1 is cleared, and the parameters associated with the chamber cleaning task AutoPurgeJob1 in the configuration information are cleared.

[0096] After the chamber cleaning task AutoPurgeJob1 is completed, the control component (PMC / IAP layer) automatically enters the next wafer processing task Batch (if there is no next wafer processing task Batch, it enters the idle state).

[0097] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor process method, applied to semiconductor process equipment, characterized in that: The semiconductor process method comprises: After the current wafer processing task is completed, determining a current film thickness accumulation parameter of at least one cleaning mode, wherein the number of the cleaning modes is multiple, and each cleaning mode has a corresponding priority; For any of the cleaning modes, when the film thickness accumulation parameter of the cleaning mode reaches a preset threshold value corresponding to the cleaning mode, the chamber cleaning task corresponding to the cleaning mode is executed; When the film thickness accumulation parameters of the plurality of cleaning modes simultaneously reach their corresponding preset thresholds, executing the plurality of chamber cleaning tasks corresponding to the plurality of cleaning modes in sequence according to their priorities; After executing the chamber cleaning task, clearing the film thickness accumulation parameter of the cleaning mode corresponding to the chamber cleaning task; Among them, determining the film thickness accumulation parameter of at least one cleaning mode includes: adding the film thickness parameter corresponding to the current wafer processing task to the film thickness accumulation parameter of each cleaning mode history to obtain the current film thickness accumulation parameter of each cleaning mode.

2. The semiconductor process method according to claim 1, wherein: The semiconductor process method further includes: When the film thickness accumulation parameter of any of the cleaning modes reaches the corresponding preset threshold, a cleaning alarm message corresponding to the cleaning mode is issued.

3. The semiconductor process method according to claim 1, wherein: For any of the cleaning modes, when the film thickness accumulation parameter of the cleaning mode reaches a preset threshold corresponding to the cleaning mode, executing the chamber cleaning task corresponding to the cleaning mode includes: When the film thickness accumulation parameter of any cleaning mode reaches the corresponding preset threshold, the chamber cleaning task corresponding to the cleaning mode is created, and the chamber cleaning task is inserted between the current wafer processing task and the next wafer processing task in the task queue.

4. The semiconductor process method according to claim 3, wherein: The chamber cleaning task includes a cleaning process recipe corresponding to the cleaning mode; The performing of the chamber cleaning task corresponding to the cleaning mode includes: Obtaining the chamber cleaning task; The semiconductor process equipment is controlled to clean its reaction chamber according to the cleaning process recipe in the chamber cleaning task.

5. A semiconductor process equipment, comprising a semiconductor process component and a control system, wherein the control system is used to control the semiconductor process component to perform a semiconductor process, characterized in that: The control system can implement the semiconductor process method according to any one of claims 1 to 4.

6. The semiconductor process equipment according to claim 5, wherein: The control system includes a host computer and a control component, wherein the host computer is used to control the semiconductor process component to perform multiple wafer processing tasks in sequence according to the task queue in the task information according to the task information stored in the host computer through the control component; The control component is further configured to, after the current wafer processing task is completed, add the film thickness parameter corresponding to the current wafer processing task to the film thickness cumulative parameter of each cleaning mode history to obtain the current film thickness cumulative parameter of each cleaning mode; Obtaining a chamber cleaning task created by the host computer, and controlling the semiconductor process component to execute the chamber cleaning task according to a notification from the host computer; and, after the semiconductor process component executes the chamber cleaning task, clearing the film thickness accumulation parameter of the cleaning mode corresponding to the chamber cleaning task to zero; The host computer is also used to create the chamber cleaning task corresponding to any cleaning mode when the film thickness accumulation parameter of the cleaning mode reaches the corresponding preset threshold, and insert the chamber cleaning task into the task queue between the current wafer processing task and the next wafer processing task.

7. The semiconductor process equipment according to claim 6, wherein: There are multiple cleaning modes, and each cleaning mode has a corresponding priority; The host computer is also used to create the chamber cleaning tasks corresponding to the multiple cleaning modes when the film thickness accumulation parameters of the multiple cleaning modes simultaneously reach the corresponding preset thresholds, and insert the multiple chamber cleaning tasks into the task queue between the current wafer processing task and the next wafer processing task in the order of the priority.

8. The semiconductor process equipment according to claim 6, wherein: The control component is further configured to issue a cleaning alarm message corresponding to any cleaning mode when the film thickness accumulation parameter of any cleaning mode reaches the corresponding preset threshold.

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