A plasma enhanced chemical vapor deposition device and an operating method thereof

Abstract

The present invention provides a plasma enhanced chemical vapor deposition device and an operation method thereof, the device includes a reaction chamber, a carrier for holding a wafer thereon; a first gas pipe, a first valve; a nozzle located above the wafer, a plasma generator for exciting the reaction gas into plasma; a power supply and a power switch for supplying power to the plasma generator. The device also includes an exhaust port arranged on the reaction chamber, a second gas pipe for passing a purified gas into the reaction chamber to discharge the plasma between the wafer and the nozzle from the exhaust port, and a second valve is arranged on the second gas pipe. When the first valve is closed and the power switch is turned on, the second valve is opened, and the purified gas is passed between the wafer and the nozzle, and the plasma that is not deposited on the surface of the wafer to form a film structure is discharged from the reaction chamber. This prevents the plasma suspended between the nozzle and the wafer from falling onto the surface of the wafer after the power switch is turned off, thereby contaminating the film structure on the surface of the wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a plasma enhanced chemical vapor deposition device and an operating method thereof. Background Art

[0002] Plasma enhanced chemical vapor deposition (PECVD) is a process often used in semiconductor manufacturing to deposit film structures on the surface of wafers. Figure 1 The plasma enhanced chemical vapor deposition equipment in the prior art includes a reaction chamber, in which a support table 1 for supporting a wafer 2 is arranged, and above the support table 1 a nozzle 3 for spraying plasma onto the surface of the wafer 2 is arranged, and the nozzle 3 is connected to an air pipe for introducing a reaction gas into the nozzle. A radio frequency generator 4 is arranged between the support table 1 and the nozzle 3, which excites the reaction gas into plasma and sprays it onto the surface of the wafer 2 through the nozzle 3 to form a film structure on the surface of the wafer 2. A power supply for supplying power to the radio frequency generator 4 is also arranged. Reference Figure 2 When the power is turned on, that is, when the RF generator 4 is working, the gas suspended between the wafer 2 and the nozzle 3 is ionized to form electrons and atomic nuclei that have lost electrons. Due to the light mass of electrons, a local electrically neutral area will be generated near the surface of the wafer 2. Electrons and atomic nuclei are also distributed above the local electrically neutral area. Since the atomic nuclei are positively charged after losing electrons, there is an electrical repulsion between the positive charges arranged above the local electrically neutral area and the suspended atomic nuclei, so that the suspended atomic nuclei cannot fall onto the wafer 2. As the power of the RF generator 4 is turned off and the gas pipe for the reaction gas to the nozzle 3 is closed, the RF generator 4 stops working, and the electrical repulsion disappears, so that the smaller atomic nuclei are attached to the film structure deposited on the front of the wafer 2, contaminating the film structure that has just been deposited, and at the same time may cause defects such as short circuits to the microcircuit structure on the front of the wafer 2. Summary of the invention

[0003] The present invention provides a plasma enhanced chemical vapor deposition device for preventing plasma that has not been deposited on a wafer surface to form a film structure from falling onto the wafer surface, thereby contaminating the film structure on the wafer surface or causing defects such as short circuits in microcircuit structures on the wafer surface.

[0004] In the first aspect, the present invention provides a plasma enhanced chemical vapor deposition device, which includes a reaction chamber, and a carrier arranged in the reaction chamber and holding a wafer thereon; a first gas pipe for introducing reaction gas into the reaction chamber, and a first valve is arranged on the first gas pipe; a nozzle connected to the first gas pipe and located above the wafer, and a plasma generator arranged on the nozzle and the carrier and exciting the reaction gas into plasma are also provided; a power supply for supplying power to the plasma generator, and a power switch for controlling the power supply to be turned on or off are also provided. It also includes an exhaust port arranged on the reaction chamber, and a second gas pipe for introducing purification gas into the reaction chamber to discharge the plasma between the wafer and the nozzle from the exhaust port, and a second valve is arranged on the second gas pipe.

[0005] In the above scheme, an exhaust port is provided on the reaction chamber, and a second gas pipe for passing a purge gas into the reaction chamber is provided, so that the plasma between the wafer and the nozzle can be discharged from the reaction chamber. When used, when the first valve is closed and the power switch is turned on, the second valve is opened to pass a purge gas between the wafer and the nozzle, so that the plasma that is not deposited on the surface of the wafer to form a film structure is discharged from the reaction chamber. This prevents the plasma suspended between the nozzle and the wafer from falling onto the surface of the wafer after the power switch is turned off, thereby contaminating the film structure on the surface of the wafer, or causing defects such as short circuits to the microcircuit structure on the surface of the wafer.

[0006] In a specific embodiment, the plasma enhanced chemical vapor deposition equipment further includes a control device connected to the first valve to control the first valve to close; the control device is also connected to the second valve to control the second valve to open after the first valve is closed; the control device is also connected to the power switch to control the power switch to close after a set time period of the first valve being closed. The control device controls the first valve to close first, and then opens the second valve to pass a purification gas between the wafer and the nozzle, and discharges the plasma that is not deposited on the wafer surface to form a film structure out of the reaction chamber; then controls the power switch to close, so as to prevent the plasma suspended between the nozzle and the wafer from falling onto the wafer surface after the power switch is turned off, thereby contaminating the film structure on the wafer surface, or causing defects such as short circuits to the microcircuit structure on the wafer surface.

[0007] In a specific embodiment, the control device is also used to prevent the power switch from being turned off before the first valve is closed, so as to prevent the power switch from being turned off by mistake before the first valve is closed during operation.

[0008] In a specific embodiment, the control device is also used to issue a warning and prevent the power switch from being turned off before the first valve is closed, so as to remind the operator of the incorrect operation process and draw the operator's attention.

[0009] In a specific embodiment, the longer the length of the first air pipe between the first valve and the nozzle is, the longer the duration of the above-mentioned set time period is, so that the length of the first air pipe between the first valve and the nozzle is positively correlated with the duration of the set time period, so as to completely discharge the plasma between the nozzle and the wafer that has not been deposited on the wafer surface to form a film structure out of the reaction chamber. When specifically determining the duration of the set time period, the duration of the set time period can be Second.

[0010] In a specific embodiment, the purge gas is one or more of helium, argon and nitrogen to prevent the purge gas from participating in chemical reactions and improve the purge effect on the plasma between the showerhead and the wafer.

[0011] In a specific embodiment, the plasma generator is a radio frequency generator, which includes a first electrode plate arranged on the nozzle, and a second electrode plate arranged on the carrier and opposite to the first electrode plate, wherein an electric field region for exciting the reaction gas into plasma is formed between the first electrode plate and the second electrode plate.

[0012] In a specific embodiment, a heater for heating the wafer to a set temperature is also provided on the carrier.

[0013] In a second aspect, the present invention also provides an operation method of the above-mentioned plasma enhanced chemical vapor deposition equipment, the operation method comprising: closing the first valve to stop the reaction gas from being passed into the reaction chamber; opening the second valve to pass the purge gas into the reaction chamber to discharge the plasma between the wafer and the nozzle from the exhaust port; after closing the first valve for a set time period, turning off the power switch to stop powering the plasma generator. By first closing the first valve and then opening the second valve, the purge gas is passed between the wafer and the nozzle to discharge the plasma that is not deposited on the wafer surface to form a film structure from the reaction chamber; then turning off the power switch to prevent the plasma suspended between the nozzle and the wafer from falling onto the wafer surface after the power switch is turned off, thereby contaminating the film structure on the wafer surface, or causing defects such as short circuits to the microcircuit structure on the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic diagram of the structure of a plasma enhanced chemical vapor deposition device provided in the prior art;

[0015] Figure 2 for Figure 1 Schematic diagram of plasma distribution in a local electrically neutral region on the upper surface of a wafer;

[0016] Figure 3 A schematic structural diagram of a plasma enhanced chemical vapor deposition device provided by an embodiment of the present invention;

[0017] Figure 4 A schematic structural diagram of another plasma enhanced chemical vapor deposition device provided by an embodiment of the present invention;

[0018] Figure 5 A flow chart of an operating method of a plasma enhanced chemical vapor deposition device provided in an embodiment of the present invention.

[0019] Reference numerals:

[0020] 10-reaction chamber 11-carrier 12-wafer 13-exhaust port

[0021] 14- nozzle 21- first air pipe 22- second air pipe

[0022] 31-first valve 32-second valve 41-first electrode plate

[0023] 42- second electrode plate 43- power switch 44- heater 50- control device DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0025] In order to facilitate understanding of the plasma enhanced chemical vapor deposition equipment provided by the embodiment of the present invention, the application scenario of the plasma enhanced chemical vapor deposition equipment provided by the embodiment of the present invention is first described below. The plasma enhanced chemical vapor deposition equipment is used to deposit a film structure on the surface of a wafer using a plasma chemical vapor deposition process. The film structure can be a SiO2 film (silicon dioxide film), a SiON film (silicon oxynitride film), a SiN film (silicon nitride film), an Amorphous-C film, etc. The plasma enhanced chemical vapor deposition equipment is described in detail below in conjunction with the accompanying drawings.

[0026] refer to Figure 3The plasma enhanced chemical vapor deposition device provided by the embodiment of the present invention includes a reaction chamber 10, and a carrier 11 for holding a wafer 12 thereon is arranged in the reaction chamber 10. When the reaction chamber 10 is set, the reaction chamber 10 can be composed of a shell structure with a hollow cavity, and the hollow cavity can be a sealed cavity. The sealed cavity in the shell structure serves as the reaction chamber 10. When the carrier 11 is set, the carrier 11 can adopt a table structure with a supporting surface, and the wafer 12 is placed on the supporting surface of the table structure. A vacuum adsorption hole for adsorbing the wafer 12 to fix the wafer 12 can be set on the supporting surface to fix the wafer 12, and the wafer 12 is fixed on the carrier 11.

[0027] Continue to refer Figure 3 , a first gas pipe 21 connected to the reaction chamber 10 is also provided, and the first gas pipe 21 is used to introduce the reaction gas into the reaction chamber 10. Specifically, a nozzle 14 is provided on the carrier 11, and the nozzle 14 is connected to the first gas pipe 21, so that the reaction gas in the first gas pipe 21 is sprayed on the surface of the wafer 12 through the nozzle 14. A first valve 31 is provided on the first gas pipe 21 to control the opening or closing of the first gas pipe 21, so as to control the nozzle 14 to spray the reaction gas on the surface of the wafer 12 or stop spraying the reaction gas on the surface of the wafer 12. The reaction gas can specifically include SiH4 (tetrahydrosilane) gas or gasified TEOS (Tetraethyl orthosilicate) to provide raw material Si (silicon); the reaction gas can also include C3H6 (propylene) to provide raw material C (carbon).

[0028] like Figure 3 As shown, a plasma generator is also provided in the reaction chamber 10, and the plasma generator is provided on the nozzle 14 and the carrier 11 to excite the reaction gas into plasma, and deposit a film structure on the surface of the wafer 12 through a plasma enhanced chemical vapor deposition process. A power supply for supplying power to the plasma generator and a power switch 43 for controlling the power supply to be turned on or off are also provided. By turning on or off the power switch 43, it is controlled whether the power supply supplies power to the plasma generator, thereby controlling whether the plasma generator works.

[0029] When setting up the plasma generator, the plasma generator may be a radio frequency generator. Figure 3, the RF generator includes a first electrode plate 41 disposed on the nozzle 14, and a second electrode plate 42 disposed on the carrier 11 and opposite to the first electrode plate; and an electric field region for exciting the reaction gas into plasma is formed between the first electrode plate 41 and the second electrode plate 42. The second electrode plate 42 can be grounded, and a certain voltage can be applied to the first electrode plate 41, so that there is a potential difference between the first electrode plate 41 and the second electrode plate 42 to form an electric field region for exciting the reaction gas into plasma. It should be understood that the setting method of the RF generator is not limited to the method shown above, and other methods can also be used. In addition, it should be noted that the plasma generator is not limited to the selection of RF generators, and other types of plasma generators conventional in the prior art can also be used.

[0030] refer to Figure 3 A heater 44 for heating the wafer 12 to a set temperature can also be provided on the carrier 11 to heat the surface of the wafer 12. At the same time, the temperature of the wafer 12 can be adjusted according to the temperature requirements in the plasma chemical vapor deposition process to improve the effect of the film structure formed by the plasma enhanced chemical vapor deposition process.

[0031] Continue to refer Figure 3 The reaction chamber 10 is also provided with an exhaust port 13, and the reaction chamber 10 is also provided with a second gas pipe 22 for passing a purge gas into the reaction chamber 10 to discharge the plasma between the wafer 12 and the shower head 14 from the exhaust port 13, so as to discharge the plasma between the wafer 12 and the shower head 14 out of the reaction chamber 10. Figure 3As shown, a second valve 32 is also provided on the second gas pipe 22 to control the opening or closing of the second gas pipe 22, so as to control whether to introduce the purge gas into the reaction chamber 10. When used, the first valve 31 and the power switch 43 are first opened to deposit a film structure on the surface of the wafer 12 using a plasma enhanced chemical vapor deposition process. After the deposition is completed, the first valve 31 is first closed, and the power switch 43 is kept in an open state at this time, so that the electric repulsion on the surface of the wafer 12 continues to exist, preventing the plasma suspended between the nozzle 14 and the wafer 12 from falling onto the surface of the wafer 12. Then, the second valve 32 is opened to introduce the purge gas between the wafer 12 and the nozzle 14, so that the plasma that is not deposited on the surface of the wafer 12 to form a film structure is discharged from the reaction chamber 10. After the power switch 43 is turned off, the electric repulsion on the surface of the wafer 12 disappears, so that the plasma suspended between the nozzle 14 and the wafer 12 falls on the surface of the wafer 12, thereby contaminating the film structure on the surface of the wafer 12, or causing defects such as short circuits to the microcircuit structure on the surface of the wafer 12. After closing the first valve 31 for a set time period, the power switch 43 is turned off to turn off the plasma generator. At this time, even if the electric repulsion on the surface of the wafer 12 is eliminated, since there is no suspended plasma between the surface of the wafer 12 and the nozzle 14, there is no need to worry that the suspended plasma falls on the surface of the wafer 12, affecting the quality of the film structure just deposited on the surface of the wafer 12, or causing defects such as short circuits to the microcircuit structure on the surface of the wafer 12.

[0032] When specifically setting the second air pipe 22 and the exhaust port 13, refer to Figure 3 , the port of the second gas pipe 22 can be set at a space position facing the wafer 12 and the nozzle 14, and the exhaust port 13 can be set below the reaction chamber 10, so that the purge gas ejected from the second gas pipe 22 can flow directly into the space between the wafer 12 and the nozzle 14, and then be discharged from the exhaust port 13 located below the reaction chamber 10, so as to evacuate the plasma between the wafer 12 and the nozzle 14. A nozzle can be set at the port of the second gas pipe 22 or a certain pressure can be increased in the second gas pipe 22 to increase the flow rate of the purge gas discharged from the second gas pipe 22, so as to improve the evacuation effect of the purge gas on the plasma suspended between the wafer 12 and the nozzle 14.

[0033] When selecting the purge gas, the purge gas may be one or more of helium, argon and nitrogen to prevent the purge gas from participating in the chemical reaction and improve the purification effect of the plasma between the nozzle 14 and the wafer 12. Specifically, the purge gas may contain only one of helium, argon and nitrogen. The purge gas may also contain any two of helium, argon and nitrogen. For example, a mixed gas composed of helium and argon may be selected as the purge gas, or a mixed gas composed of helium and nitrogen may be selected as the purge gas, or a mixed gas composed of argon and nitrogen may be selected as the purge gas. The purge gas may also select a mixed gas composed of helium, argon and nitrogen as the purge gas.

[0034] When determining the delay time of the set time period between closing the first valve 31 and closing the power switch 43, if the length of the first air pipe 21 between the first valve 31 and the nozzle 14 is longer, the length of the above-mentioned set time period is longer; similarly, if the length of the first air pipe 21 between the first valve 31 and the nozzle 14 is shorter, the length of the above-mentioned set time period is shorter. By making the length of the first air pipe 21 between the first valve 31 and the nozzle 14 positively correlated with the length of the set time period, the plasma between the nozzle 14 and the wafer 12 that has not been deposited on the surface of the wafer 12 to form a film structure can be completely discharged from the reaction chamber 10. When specifically determining the length of the set time period, the length of the set time period can be Specifically, the duration of the set time period can be 0.5 seconds, 0.8 seconds, 1.0 seconds, 1.2 seconds, 1.5 seconds, 1.7 seconds, 2.0 seconds, etc. Any duration between seconds.

[0035] refer to Figure 4, a control device 50 may also be provided, the control device 50 being connected to the first valve 31 to control the first valve 31 to close. Specifically, after the film structure deposition process on the wafer 12 is completed, the control device 50 controls the first valve 31 to close. The control device 50 is also connected to the second valve 32 to control the second valve 32 to open after the first valve 31 is closed, and to introduce a purge gas into the reaction chamber 10 to discharge the plasma suspended between the wafer 12 and the nozzle 14 from the reaction chamber 10. This prevents the mutual repulsion on the surface of the wafer 12 from disappearing after the power switch 43 is turned off and the plasma generator stops working, thereby causing the suspended plasma to fall onto the film structure just deposited on the surface of the wafer 12. The control device 50 is also connected to the power switch 43 to control the power switch 43 to close after the set time period when the first valve 31 is closed, so as to turn off the plasma generator. At this time, even if the electric repulsion on the surface of the wafer 12 is eliminated, since there is no suspended plasma between the surface of the wafer 12 and the nozzle 14, there is no need to worry about the suspended plasma falling on the surface of the wafer 12, affecting the quality of the film structure just deposited on the surface of the wafer 12, or causing defects such as short circuits in the microcircuit structure on the surface of the wafer 12.

[0036] When setting the control device 50, the control device 50 may be a terminal device with a control function, for example, the control device 50 may be a computer such as an industrial computer, a host computer, etc. When connecting the control device 50 to the first valve 31, the second valve 32, and the power switch 43, a wired connection may be used, or a wireless communication may be used. That is, as long as the control device 50 can control the opening and closing of the first valve 31, the second valve 32, and the power switch 43, it is within the protection scope of the embodiment of the present invention.

[0037] The control device 50 can also be used to prevent the power switch 43 from being turned off before the first valve 31 is closed, so as to prevent the power switch 43 from being turned off by mistake before the first valve 31 is closed during operation. The specific implementation method can be achieved by setting software programming. The control device 50 can also be set to issue a warning and prevent the power switch 43 from being turned off when the power switch 43 is turned off before the first valve 31 is closed. This is to remind the operator that there is an incorrect operation process and draw the operator's attention. The specific method of issuing a warning can be to use a pop-up window reminder on the display screen of the terminal device, to use a warning sound, or to use a prompt light to light up or flash.

[0038] In addition, it can also be set that when the operator turns off the power switch 43 before closing the first valve 31, the control device 50 automatically closes the first valve 31 first and opens the second valve 32 at the same time, and turns off the power switch 43 after a set time period by programming. At this time, even if the operator does not operate in the order of first closing the first valve 31 and then turning off the power switch 43, the control device 50 has a working process of first closing the first valve 31 and opening the second valve 32 at the same time when receiving the input signal to close the first valve 31, and turning off the power switch 43 after a set time period, so that the operating sequence of first closing the first valve 31 and then turning off the power switch 43 can also be guaranteed.

[0039] By providing the exhaust port 13 on the reaction chamber 10 and the second gas pipe 22 for passing the purge gas into the reaction chamber 10, the plasma between the wafer 12 and the nozzle 14 can be discharged from the reaction chamber 10. When used, when the first valve 31 is closed and the power switch 43 is turned on, the second valve 32 is opened to pass the purge gas between the wafer 12 and the nozzle 14, so that the plasma that is not deposited on the surface of the wafer 12 to form a film structure is discharged from the reaction chamber 10. After the power switch 43 is turned off, the plasma suspended between the nozzle 14 and the wafer 12 is prevented from falling onto the surface of the wafer 12, thereby contaminating the film structure on the surface of the wafer 12, or causing defects such as short circuits to the microcircuit structure on the surface of the wafer 12.

[0040] In addition, the present invention also provides an operating method of the above-mentioned plasma enhanced chemical vapor deposition equipment, referring to Figure 5 , the operation method includes:

[0041] S10: closing the first valve 31 to stop the reaction gas from flowing into the reaction chamber 10;

[0042] S20: Open the second valve 32 to pass the purge gas into the reaction chamber 10, and discharge the plasma between the wafer 12 and the showerhead 14 from the exhaust port 13;

[0043] S30: After the first valve 31 is closed for a set period of time, the power switch 43 is turned off to stop supplying power to the plasma generator.

[0044] By first closing the first valve 31 and then opening the second valve 32, the purge gas is introduced between the wafer 12 and the nozzle 14, and the plasma that has not been deposited on the surface of the wafer 12 to form a film structure is discharged from the reaction chamber 10; then the power switch 43 is turned off to prevent the plasma suspended between the nozzle 14 and the wafer 12 from falling onto the surface of the wafer 12 after the power switch 43 is turned off, thereby contaminating the film structure on the surface of the wafer 12, or causing defects such as short circuits to the microcircuit structure on the surface of the wafer 12. The specific operation method of each step is referred to the above description of the equipment part, which will not be repeated here.

[0045] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A method for operating a plasma enhanced chemical vapor deposition device, characterized in that: The method is used to operate a plasma enhanced chemical vapor deposition device, the plasma enhanced chemical vapor deposition device comprising: a reaction chamber; A stage disposed in the reaction chamber and holding the wafer thereon; A first gas pipe for introducing reaction gas into the reaction chamber, wherein the first gas pipe is provided with a first valve; a showerhead connected to the first air pipe and located above the wafer; A plasma generator disposed on the showerhead and the carrier and exciting the reaction gas into plasma; A power source for supplying power to the plasma generator, and a power switch for controlling the power source to be turned on or off; Also includes: An exhaust port disposed on the reaction chamber; A second gas pipe for passing a purge gas into the reaction chamber to discharge the plasma between the wafer and the showerhead from the exhaust port, wherein the second gas pipe is provided with a second valve; The port of the second gas pipe is arranged at a space between the wafer and the nozzle, and the exhaust port is arranged at the bottom of the reaction chamber; Also includes: a control device connected to the first valve to control the closing of the first valve; The control device is also connected to the second valve to control the second valve to open after the first valve is closed; The control device is also connected to the power switch to control the power switch to close after a set time period when the first valve is closed; The method comprises: By means of the control device, closing the first valve to stop the flow of the reaction gas into the reaction chamber; By means of the control device, the second valve is opened to pass the purge gas into the reaction chamber, and the plasma between the wafer and the showerhead is discharged from the exhaust port; Through the control device, after the first valve is closed for a set time period and after the second valve is opened, the power switch is turned off to stop supplying power to the plasma generator.

2. The operating method of the plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: The control device is also used to prevent the power switch from being turned off before the first valve is closed.

3. The operating method of plasma enhanced chemical vapor deposition equipment according to claim 2, characterized in that: The control device is also used to issue a warning and prevent the power switch from being turned off when the power switch is turned off before the first valve is closed.

4. The operating method of the plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: The longer the length of the first air pipe between the first valve and the nozzle is, the longer the set time period is.

5. The operating method of plasma enhanced chemical vapor deposition equipment according to claim 4, characterized in that: The duration of the set time period is 0.5 to 2.0 seconds.

6. The operating method of plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: The purification gas is one or more of helium, argon and nitrogen.

7. The operating method of plasma enhanced chemical vapor deposition equipment according to claim 1, characterized in that: The plasma generator is a radio frequency generator, and the radio frequency generator comprises: a first electrode plate disposed on the showerhead; a second electrode plate disposed on the carrier and opposite to the first electrode plate; An electric field region for exciting the reaction gas into plasma is formed between the first electrode plate and the second electrode plate.

8. The operating method of plasma enhanced chemical vapor deposition equipment according to claim 7, characterized in that: The carrier is also provided with a heater for heating the wafer to a set temperature.

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