MCM Packaging Structure and Its Manufacturing Method

Abstract

The present invention provides an MCM packaging structure and a manufacturing method thereof. The packaging structure includes: a first die component / die, a pre-wired substrate, a molding layer, a first conductive trace, a second conductive trace, a conductive bump, a first dielectric layer, and a second dielectric layer. The pre-wired substrate can transfer the wiring layer that needs to be formed on the active surface of the die into the pre-wired substrate. The pre-wired substrate includes complex multi-circuits, and these complex multi-circuits are embedded in the packaging structure by being electrically connected to the pads on the active surface of the die, which can improve the performance of the entire MCM packaging structure. The pre-wired substrate can be tested before packaging to avoid using known defective pre-wired substrates. The pre-wired substrate is a prefabricated substrate, and its manufacturing process is carried out independently of the packaging process, which can save the packaging time of the entire packaging process.

Description

Technical Field

[0001] The present invention relates to the technical field of chip packaging, and in particular, to a MCM packaging structure and a manufacturing method thereof. Background Art

[0002] During the packaging process, bare chips with different functions are often packaged in a packaging structure to form a specific function, which is called a Multi-Chip Module (MCM). It has advantages such as small volume, high reliability, high performance, and multi-functionality.

[0003] With the miniaturization and light weight of electronic devices, chip packages with a compact structure and small volume are favored by more and more markets.

[0004] In MCMs, the internal circuit structure of chips is often relatively complex, and the wiring density in the rewiring layer is high, which will cause wiring difficulties due to the too small chip surface area. In addition, due to the too dense wiring, it is easy for micro wiring to cause short circuits, thus affecting the yield of products. At the same time, the service life of the chips is also relatively low; especially in the case where multiple wiring layers need to be formed, the process is difficult to control due to its complexity. Summary of the Invention

[0005] The invention object of the present invention is to provide a MCM packaging structure and a manufacturing method thereof to solve the problems in the related art.

[0006] To achieve the above object, the first aspect of the present invention provides a MCM packaging structure, including:

[0007] A first bare chip component, at least including: a first bare chip and a second bare chip. The first bare chip includes a plurality of first pads, and the first pads are located on the active surface of the first bare chip. The second bare chip includes a plurality of second pads, and the second pads are located on the active surface of the second bare chip; the active surface of the second bare chip is covered with a second protective layer, and the second protective layer exposes the second pads; the active surface of the first bare chip and the active surface of the second bare chip face away from each other;

[0008] A pre-wired substrate, arranged around the first bare chip component; the pre-wired substrate is provided with pre-wired lines, and the pre-wired lines include a front electrical connection point and a back electrical connection point. The front electrical connection point is exposed on the front of the pre-wired substrate, and the back electrical connection point is exposed on the back of the pre-wired substrate;

[0009] A plastic encapsulation layer, covering the first bare chip component and the pre-wired substrate. The back of the plastic encapsulation layer exposes the second protective layer, the second pads, and the back of the pre-wired substrate, and the front of the plastic encapsulation layer exposes the active surface of the first bare chip and the front of the pre-wired substrate;

[0010] A first conductive trace located on the first pad, the front electrical connection point, and the front of the encapsulation layer for electrically connecting the first die to the pre-wired circuit;

[0011] A second conductive trace located on the second pad, the back electrical connection point, and the back of the encapsulation layer for electrically connecting the second die to the pre-wired circuit;

[0012] A conductive bump connected to the first conductive trace;

[0013] A first dielectric layer embedding the first conductive trace and the conductive bump, with the conductive bump exposed outside the first dielectric layer; and

[0014] A second dielectric layer embedding the second conductive trace.

[0015] Optionally, the first die assembly is a die stack structure.

[0016] Optionally, the connection of the conductive bump to the first conductive trace is replaced with: the conductive bump is connected to the second conductive trace; correspondingly, the second dielectric layer embeds the second conductive trace and the conductive bump, the conductive bump is exposed outside the second dielectric layer, and the first dielectric layer embeds the first conductive trace.

[0017] Optionally, further comprising: a third dielectric layer located on the active surface of the first die, the front of the pre-wired substrate, and the front of the encapsulation layer; the third dielectric layer exposes the first pad and the front electrical connection point; the first conductive trace is located on the first pad, the front electrical connection point, and the third dielectric layer.

[0018] Optionally, further comprising: a first protective layer covering the active surface of the first die, the first protective layer exposing the first pad; the front of the encapsulation layer exposes the first protective layer and the first pad.

[0019] Optionally, the material of the second protective layer is an organic polymer insulating material, an inorganic insulating material, or a composite material; and / or the material of the first dielectric layer is an organic polymer insulating material, an inorganic insulating material, or a composite material; and / or the material of the second dielectric layer is an organic polymer insulating material, an inorganic insulating material, or a composite material.

[0020] Optionally, the first conductive trace includes a layer of metal pattern layer; and / or the second conductive trace includes a layer of metal pattern layer.

[0021] A second aspect of the present invention provides a method for manufacturing an MCM packaging structure, comprising:

[0022] Provided is a carrier board and multiple groups of components to be encapsulated carried on the carrier board. Each group of the components to be encapsulated includes: a pre-wired substrate having a through-opening, and a first die assembly located within the through-opening; pre-wired lines are provided in the pre-wired substrate, and the pre-wired lines include a front electrical connection point and a back electrical connection point. The front electrical connection point is exposed on the front of the pre-wired substrate, and the back electrical connection point is exposed on the back of the pre-wired substrate; the first die assembly at least includes: a first die and a second die. The first die includes a plurality of first pads located on the active surface of the first die, and the second die includes a plurality of second pads located on the active surface of the second die; a second protective layer covers the active surface of the second die; the active surfaces of the first die and the second die face away from each other; the front of the pre-wired substrate and the active surface of the first die face the carrier board;

[0023] A plastic encapsulation layer is formed on the surface of the carrier board to encapsulate each group of the components to be encapsulated; the plastic encapsulation layer is thinned until the second protective layer and the back of the pre-wired substrate are exposed;

[0024] A second opening is formed in the second protective layer to expose the second pads; a second conductive trace is formed on the back of the second protective layer, the second pads, the back electrical connection point, and the plastic encapsulation layer to electrically connect the second die within the group and the pre-wired lines; a second dielectric layer is formed to encapsulate the second conductive trace;

[0025] The carrier board is removed to expose the active surface of the first die, the front of the pre-wired substrate, and the front of the plastic encapsulation layer; a first conductive trace is formed on the first pads, the front electrical connection point, and the front of the plastic encapsulation layer to electrically connect the first die within the group and the pre-wired lines;

[0026] A conductive bump is formed on the first conductive trace and a first dielectric layer is formed to encapsulate the first conductive trace and the conductive bump, and the conductive bump is exposed outside the first dielectric layer;

[0027] Cutting is performed to form multiple MCM packaging structures, and each MCM packaging structure includes a group of the components to be encapsulated.

[0028] Optionally, after the step of forming the second conductive trace, conductive bumps are formed on the second conductive trace, and a second dielectric layer embedding the second conductive trace and the conductive bumps is formed, with the conductive bumps exposed outside the second dielectric layer; the step of forming conductive bumps on the first conductive trace and forming a first dielectric layer embedding the first conductive trace and the conductive bumps, with the conductive bumps exposed outside the first dielectric layer is replaced by: forming a first dielectric layer embedding the first conductive trace.

[0029] Optionally, after removing the carrier board, forming the first conductive trace, the conductive bumps, and the first dielectric layer embedding the first conductive trace and the conductive bumps; a support board is then disposed on the first dielectric layer and the conductive bumps, the encapsulation layer is thinned, and the second conductive trace and the second dielectric layer are formed.

[0030] Optionally, after removing the carrier board, a third dielectric layer is formed on the active surface of the exposed first die, the front surface of the pre-wired substrate, and the front surface of the encapsulation layer; a plurality of third openings are formed in the third dielectric layer, and the third openings expose the first pads and the front electrical connection points; the first conductive trace is formed on the first pads, the front electrical connection points, and the third dielectric layer.

[0031] Optionally, in the first die assembly, the active surface of the first die is covered with a first protective layer; the first protective layer faces the carrier board; the first protective layer is provided with a first opening exposing the first pads, or after the step of removing the carrier board and before the step of forming the first conductive trace, a first opening is formed in the first protective layer to expose the first pads.

[0032] Optionally, the pre-wired substrates of each group of the components to be encapsulated are connected together and are cut open during the step of cutting to form a plurality of MCM packaging structures.

[0033] A third aspect of the present invention provides an MCM packaging structure, including:

[0034] A die, the die includes a plurality of pads located on the active surface of the die;

[0035] A pre-wired substrate disposed around the die; the pre-wired substrate is provided with pre-wired lines, and the pre-wired lines include front electrical connection points and back electrical connection points, the front electrical connection points are exposed on the front surface of the pre-wired substrate, and the back electrical connection points are exposed on the back surface of the pre-wired substrate;

[0036] An encapsulation layer covering the die and the pre-wired substrate, and the front surface of the encapsulation layer exposes the active surface of the die and the front electrical connection points;

[0037] A conductive trace, located on the pad, the front electrical connection point, and the front of the plastic encapsulation layer, for electrically connecting the die to the pre-wired circuit;

[0038] A conductive bump, connected to the back electrical connection point;

[0039] A first dielectric layer, embedding the conductive trace;

[0040] A second dielectric layer, embedding the conductive bump, with the conductive bump exposed outside the second dielectric layer.

[0041] Optionally, a second die assembly replaces the die, and the second die assembly includes multiple dies with the active surfaces of the multiple dies facing the same direction.

[0042] The fourth aspect of the present invention provides a method for manufacturing an MCM packaging structure, including:

[0043] Providing a carrier board and multiple groups of components to be packaged carried on the carrier board, and each group of components to be packaged includes: a pre-wired substrate having a through opening, and a die located within the through opening; pre-wired circuits are provided within the pre-wired substrate, and the pre-wired circuits include a front electrical connection point and a back electrical connection point, the front electrical connection point is exposed on the front of the pre-wired substrate, and the back electrical connection point is exposed on the back of the pre-wired substrate; the die includes a plurality of pads located on the active surface of the die; the front of the pre-wired substrate and the active surface of the die face the carrier board;

[0044] Forming a plastic encapsulation layer on the surface of the carrier board to embed each group of components to be packaged; thinning the plastic encapsulation layer until the back of the pre-wired substrate is exposed;

[0045] Removing the carrier board to expose the active surface of the die, the front of the pre-wired substrate, and the front of the plastic encapsulation layer; forming a conductive trace on the pad, the front electrical connection point, and the front of the plastic encapsulation layer to electrically connect the die within the group to the pre-wired circuit; forming a first dielectric layer embedding the conductive trace;

[0046] Forming a conductive bump on the back electrical connection point and forming a second dielectric layer embedding the conductive bump, with the conductive bump exposed outside the second dielectric layer;

[0047] Cutting to form multiple MCM packaging structures, and each MCM packaging structure includes a group of components to be packaged.

[0048] Optionally, a second die assembly replaces the die, and the second die assembly includes multiple dies with the active surfaces of the multiple dies facing the same direction.

[0049] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0050] First, the pre-wired substrate can transfer the wiring layer that needs to be formed on the active surface of the die to the pre-wired substrate. The pre-wired substrate includes complex multi-circuits, and these complex multi-circuits are embedded in the package structure by being electrically connected to the pads on the active surface of the die, which can improve the performance of the entire MCM package structure. Second, the fine wiring in the redistribution layer is transferred to the pre-wired substrate, reducing the probability of short circuits, increasing the product yield, and at the same time reducing the number of layers of the first conductive trace and / or the second conductive trace, reducing the process complexity. Third, a pre-formed pre-wired substrate is provided, and the pre-wired substrate can be tested before packaging to avoid using a known defective pre-wired substrate. Fourth, the pre-wired substrate is a prefabricated substrate, and its manufacturing process is carried out independently of the packaging process, which can save the packaging time of the entire packaging process.

[0051] In addition, die assemblies with the active surfaces facing the same or opposite directions can achieve the effects of small volume and compact structure of the MCM package structure. For die assemblies with the active surfaces facing opposite directions, through the pre-wired substrate, not only the electrical connection between the first die and the second die can be realized, but also two-sided wiring on the front and back surfaces of the plastic encapsulation layer can be achieved. Compared with wiring on only one surface, the wiring density can be increased, and an MCM package structure with more complex wiring and smaller volume can be formed. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 is a schematic cross-sectional structure diagram of the MCM package structure according to the first embodiment of the present invention;

[0053] Figure 2 is Figure 1 a flowchart of a manufacturing method of the MCM package structure in

[0054] Figures 3 to 9 is Figure 2 the corresponding intermediate structure schematic diagram of the process in

[0055] Figure 10 is a flowchart of a manufacturing method of the MCM package structure according to the second embodiment of the present invention;

[0056] Figure 11 And Figure 12 is Figure 10 the corresponding intermediate structure schematic diagram of the process in

[0057] Figure 13 is a schematic cross-sectional structure diagram of the MCM package structure according to the third embodiment of the present invention;

[0058] Figure 14 is a schematic cross-sectional structure diagram of the MCM package structure according to the fourth embodiment of the present invention;

[0059] Figure 15 It is a schematic cross-sectional structure diagram of the MCM packaging structure according to the fifth embodiment of the present invention.

[0060] For the convenience of understanding the present invention, all the reference numerals appearing in the present invention are listed below:

[0061] MCM packaging structures 1, 6, 7, 8; first die assembly 10

[0062] First die 11; first protective layer 110

[0063] First pad 111; back surface 11b of the first die

[0064] Active surface 11a of the first die; second die 12

[0065] Second protective layer 120; second pad 121

[0066] Back surface 12b of the second die; active surface 12a of the second die

[0067] Pre-wired substrate 13; pre-wired circuit 130

[0068] Front electrical connection point 131; back electrical connection point 132

[0069] Front surface 13a of the pre-wired substrate; back surface 13b of the pre-wired substrate

[0070] Plastic encapsulation layer 14; front surface 14a of the plastic encapsulation layer

[0071] Back surface 14b of the plastic encapsulation layer; first conductive trace 15

[0072] Second conductive trace 16; conductive bump 17

[0073] First dielectric layer 18; second dielectric layer 19

[0074] Through-opening 133; first opening 110a

[0075] Second opening 120a; metal pattern blocks 15a, 16a

[0076] Carrier board 2; component to be encapsulated 3

[0077] First support plate 4; second support plate 5

[0078] Third opening 20a; third dielectric layer 20 Detailed implementation manners

[0079] To make the above objects, features and advantages of the present invention more obvious and understandable, the following detailed description of the specific embodiments of the present invention is given in conjunction with the accompanying drawings.

[0080] Figure 1 It is a schematic cross-sectional structure diagram of the MCM packaging structure according to the first embodiment of the present invention.

[0081] Refer to Figure 1 As shown, the MCM packaging structure 1 includes:

[0082] The first die assembly 10 includes at least: a first die 11 and a second die 12. The first die 11 includes a plurality of first pads 111, and the first pads 111 are located on the active surface 11a of the first die 11. The second die 12 includes a plurality of second pads 121, and the second pads 121 are located on the active surface 12a of the second die 12. A second protective layer 120 is covered on the active surface 12a of the second die 12, and the second protective layer 120 exposes the second pads 121. The active surface 11a of the first die 11 and the active surface 11b of the second die 12 face away from each other;

[0083] The pre-wired substrate 13 is disposed around the first die assembly 10. The pre-wired substrate 13 is provided with pre-wired lines 130. The pre-wired lines 130 include a front electrical connection point 131 and a back electrical connection point 132. The front electrical connection point 131 is exposed on the front surface 13a of the pre-wired substrate 13, and the back electrical connection point 132 is exposed on the back surface 13b of the pre-wired substrate 13;

[0084] The encapsulation layer 14 covers the first die assembly 10 and the pre-wired substrate 13. The back surface 14b of the encapsulation layer 14 exposes the second protective layer 120, the second pads 121, and the back surface 13b of the pre-wired substrate 13. The front surface 14a of the encapsulation layer 14 exposes the active surface 11a of the first die 11 and the front surface 13a of the pre-wired substrate 13;

[0085] The first conductive trace 15 is located on the first pads 111, the front electrical connection point 131, and the front surface 14a of the encapsulation layer 14, and is used for electrically connecting the first die 11 and the pre-wired lines 130;

[0086] The second conductive trace 16 is located on the second pads 121, the back electrical connection point 132, and the back surface 14b of the encapsulation layer 14, and is used for electrically connecting the second die 12 and the pre-wired lines 130;

[0087] The conductive bump 17 is connected to the first conductive trace 15;

[0088] The first dielectric layer 18 embeds the first conductive trace 15 and the conductive bump 17, and the conductive bump 17 is exposed outside the first dielectric layer 18; and

[0089] The second dielectric layer 19 embeds the second conductive trace 16.

[0090] The first die 11 and the second die 12 can be dies that need to be electrically interconnected, without limiting their respective functions. In some embodiments, the first die 11 and the second die 12 can be power dies, memory dies, sensor dies, or radio frequency dies or corresponding control chips.

[0091] Referring to Figure 1 As shown, the first die 11 includes opposite active surfaces 11a and back surfaces 11b. The first pad 111 is exposed on the active surface 11a. A variety of devices formed on a semiconductor substrate and electrical interconnection structures electrically connected to each device can be included within the first die 11. The first pad 111 is connected to the electrical interconnection structure for inputting / outputting the electrical signals of each device.

[0092] It should be noted that in the present invention, " / " represents "or".

[0093] The second die 12 includes opposite active surfaces 12a and back surfaces 12b. The second pad 121 is exposed on the active surface 12a. A variety of devices formed on a semiconductor substrate and electrical interconnection structures electrically connected to each device can be included within the second die 12. The second pad 121 is connected to the electrical interconnection structure for inputting / outputting the electrical signals of each device.

[0094] Continuing to refer to Figure 1 As shown, in this embodiment, the first die assembly 10 is a die stacking structure, that is, the first die 11 and the second die 12 are arranged back to back. The first die 11 and the second die 12 being arranged back to back means that the back surface 11b of the first die 11 is attached to the back surface 12b of the second die 12.

[0095] In other embodiments, in the first die assembly 10, one or more first dies 11 can be included, or one or more second dies 12 can also be included. The first die 11 and the second die 12 can be arranged in a staggered manner, or even side by side, that is, the back surface 12b of the second die 12 is also exposed on the front surface 14a of the encapsulation layer 14.

[0096] In this embodiment, the area of the first die 11 is larger than the area of the second die 12. In other embodiments, the area of the second die 12 can also be larger than the area of the first die 11.

[0097] In this embodiment, a first protective layer 110 is provided on the active surface 11a of the first die 11. In some embodiments, the first protective layer 110 can also be omitted on the active surface 11a of the first die 11.

[0098] The first protective layer 110 and / or the second protective layer 120 are made of insulating materials, specifically, they can be organic polymer insulating materials, inorganic insulating materials or composite materials. The organic polymer insulating materials are, for example, polyimide, epoxy resin, ABF (Ajinomoto buildup film), PBO (Polybenzoxazole), organic polymer films or other organic materials with similar insulating properties. The inorganic insulating materials are, for example, at least one of silicon dioxide and silicon nitride. The composite material is an inorganic-organic composite material, which can be an inorganic-organic polymer composite material, such as SiO2 / resin polymer composite material.

[0099] The pre-wired substrate 13 includes pre-wired lines 130 and an insulating material layer filled between the pre-wired lines 130. Compared with the solution of fabricating a redistribution layer on the encapsulant of the first die 11 and the second die 12, the advantages of adopting the pre-wired substrate 13 in this solution are as follows: First, the fine wiring in the redistribution layer is transferred to the pre-wired substrate 13, reducing the probability of short circuits, increasing the product yield, and at the same time reducing the number of layers of the first conductive trace 15 and / or the second conductive trace 16, and lowering the process complexity. Second, a pre-formed pre-wired substrate 13 is provided, and the pre-wired substrate 13 can be tested before encapsulation to avoid using a pre-wired substrate 13 with known defects. Third, the pre-wired substrate 13 is a prefabricated substrate, and its manufacturing process is independent of the encapsulation process, which can save the encapsulation time of the entire encapsulation process.

[0100] In addition, the wiring layer that needs to be formed on the active surfaces 11a and 12a of the dies is transferred to the pre-wired substrate 13. The pre-wired substrate 13 includes complex multi-circuits, and these complex multi-circuits are embedded in the encapsulation structure 1 by being electrically connected to the pads 111 and 121 on the active surfaces 11a and 12a of the dies, which can improve the performance of the entire encapsulation structure 1.

[0101] The pre-wired substrate 13 can be a single piece surrounding the first die assembly 10, or multiple pieces. When it is multiple pieces, each piece of the pre-wired substrate 13 can be electrically connected to the first die 11 / second die 12 through the first conductive trace 15 and / or the second conductive trace 16.

[0102] The pre-wired substrate 13 can include opposite front surface 13a and back surface 13b. In this embodiment, the front surface 13a of the pre-wired substrate 13 is flush with the first protective layer 110, and the back surface 13b of the pre-wired substrate 13 is flush with the second protective layer 120. There can be multiple front electrical connection points 131 exposed on the front surface 13a of the pre-wired substrate, and there can also be multiple back electrical connection points 132 exposed on the back surface 13b of the pre-wired substrate.

[0103] The material of the encapsulation layer 14 can be epoxy resin, polyimide resin, benzocyclobutene resin, polybenzoxazole resin, polybutylene terephthalate, polycarbonate, polyethylene terephthalate, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyethersulfone, polyamide, polyurethane, ethylene-vinyl acetate copolymer, or polyvinyl alcohol, etc. The material of the encapsulation layer 14 can also be various polymers or composite materials of resin and polymer.

[0104] The encapsulation layer 14 includes opposite front face 14a and back face 14b. In this embodiment, the front face 14a of the encapsulation layer 14 exposes the first protective layer 110, the first pad 111, and the front face 13a of the pre-wired substrate 13, and the back face 14b of the encapsulation layer 14 exposes the second protective layer 120, the second pad 121, and the back face 13b of the pre-wired substrate 13.

[0105] Figure 1 In the illustrated embodiment, the first conductive trace 15 includes a plurality of metal pattern blocks 15a and has one layer. A partial number of the metal pattern blocks 15a are selectively electrically connected to the front electrical connection points 131 and the first pad 111 to achieve electrical connection between the pre-wired substrate 13 and the first die 11; a partial number of the metal pattern blocks 15a are selectively electrically connected to the front electrical connection points 131 to lead out the front electrical connection points 131 through the conductive bumps 17. In addition, a partial number of the metal pattern blocks 15a can be selectively electrically connected to a plurality of front electrical connection points 131 to achieve circuit layout or electrical conduction of the front electrical connection points 131; a partial number of the metal pattern blocks 15a can be selectively electrically connected to a plurality of first pads 111 to achieve circuit layout or electrical conduction of the first pads 111.

[0106] The layout of the first conductive trace 15 can be determined according to a preset circuit layout.

[0107] In some embodiments, the first conductive trace 15 can also include two or more layers, that is, it has two or more metal pattern layers.

[0108] Figure 1 In the illustrated embodiment, the second conductive trace 16 includes a plurality of metal pattern blocks 16a and has one layer. A partial number of the metal pattern blocks 16a are selectively electrically connected to the back electrical connection points 132 and the second pad 121 to achieve electrical connection between the pre-wired substrate 13 and the second die 12. In addition, a partial number of the metal pattern blocks 16a can be selectively electrically connected to a plurality of back electrical connection points 132 to achieve circuit layout or electrical conduction of the back electrical connection points 132; a partial number of the metal pattern blocks 16a can be selectively electrically connected to a plurality of second pads 121 to achieve circuit layout or electrical conduction of the second pads 121.

[0109] The layout of the second conductive trace 16 can be determined according to a preset circuit layout.

[0110] In some embodiments, the second conductive trace 16 may further include two or more layers, that is, having two or more metal pattern layers.

[0111] Referring to Figure 1 As shown, in this embodiment, the conductive bumps 17 on the first electrical connection line 15 serve as the external connection ends of the MCM package structure 1.

[0112] In some embodiments, the conductive bumps 17 may further have an antioxidant layer.

[0113] The antioxidant layer may include: b1) a tin layer, or b2) a nickel layer and a gold layer stacked from bottom to top, or b3) a nickel layer, a palladium layer and a gold layer stacked from bottom to top. The material of the conductive bump 17 can be copper, and the above antioxidant layer can prevent copper oxidation, thereby preventing the deterioration of the electrical connection performance caused by copper oxidation.

[0114] In some embodiments, the conductive bumps 17 may further have solder balls for the flip-chip of the MCM package structure 1.

[0115] The materials of the first dielectric layer 18 and the second dielectric layer 19 can be organic polymer insulating materials, inorganic insulating materials or composite materials. The organic polymer insulating materials are, for example, polyimide, epoxy resin, ABF (Ajinomoto buildup film), PBO (Polybenzoxazole), organic polymer films or other organic materials with similar insulating properties. The composite material is an inorganic-organic composite material, which can be an inorganic-organic polymer composite material, such as SiO2 / resin polymer composite material. The inorganic insulating materials are, for example, at least one of silicon dioxide and silicon nitride. Compared with inorganic insulating materials, the organic polymer insulating materials and composite materials have smaller tensile stress and can prevent warping on the surface of the MCM package structure 1.

[0116] In the MCM package structure 1, on the one hand, the first die assembly 10 with the active surfaces facing away from each other achieves the effects of small volume and compact structure of the MCM package structure 1. On the other hand, through the pre-wired substrate 13, not only the electrical connection between the first die 11 and the second die 12 is realized, but also the wiring on both the front surface 14a and the back surface 14b of the encapsulation layer 14 is realized. Compared with the wiring on only one surface, the wiring density can be increased, and an MCM package structure 1 with more complex wiring and smaller volume can be formed.

[0117] An embodiment of the present invention provides Figure 1 a manufacturing method of the MCM package structure 1 in Figure 2 is a flowchart of the manufacturing method. Figures 3 to 9Yes Figure 2 Schematic diagram of the intermediate structure corresponding to the process in

[0118] First, referring to Figure 2 step S1 in Figure 3 and Figure 4 as shown, a carrier substrate 2 and multiple groups of components to be encapsulated 3 carried on the carrier substrate 2 are provided. Each group of components to be encapsulated 3 includes: a pre-wired substrate 13 having a through opening 133, and a first die assembly 10 located within the through opening 133; pre-wired lines 130 are provided within the pre-wired substrate 13, and the pre-wired lines 130 include a front electrical connection point 131 and a back electrical connection point 132. The front electrical connection point 131 is exposed on the front surface 13a of the pre-wired substrate 13, and the back electrical connection point 132 is exposed on the back surface 13b of the pre-wired substrate 13; the first die assembly 10 at least includes: a first die 11 and a second die 12. The first die 11 includes a plurality of first pads 111, and the first pads 111 are located on the active surface 11a of the first die 11. The second die 12 includes a plurality of second pads 121, and the second pads 121 are located on the active surface 12a of the second die 12; a second protective layer 120 is covered on the active surface 12a of the second die 12; the active surface 11a of the first die 11 and the active surface 12a of the second die 12 face away from each other; the front surface 13a of the pre-wired substrate 13 and the active surface 11a of the first die 11 face the carrier substrate 2. Among them, Figure 3 is a top view of the carrier substrate and multiple groups of components to be encapsulated; Figure 4 is a cross-sectional view along the Figure 3 AA line in

[0119] The first die 11 and the second die 12 can be dies that need to be electrically interconnected, and their respective functions are not limited. In some embodiments, the first die 11 and the second die 12 can be power dies, memory dies, sensor dies, or radio frequency dies or corresponding control chips.

[0120] Referring to Figure 4 as shown, the first die 11 includes opposite active surface 11a and back surface 11b. The first die 11 can include various devices formed on a semiconductor substrate, and electrical interconnection structures electrically connected to each device. The first pads 111 exposed on the active surface 11a of the first die 11 are connected to the electrical interconnection structures for inputting / outputting electrical signals of each device.

[0121] The second die 12 includes opposite active surface 12a and back surface 12b. The second pad 121 is exposed on the active surface 12a. The second die 12 may also include various devices formed on a semiconductor substrate, and an electrical interconnection structure electrically connected to each device. The second pad 121 exposed on the active surface 12a of the second die 12 is connected to the electrical interconnection structure for inputting / outputting electrical signals of each device.

[0122] Continuing to refer to Figure 4 As shown, in this embodiment, the first die assembly 10 is a die stacking structure, that is, the first die 11 and the second die 12 are arranged back to back. In other embodiments, the first die assembly 10 may include one or more first dies 11, and may also include one or more second dies 12. The first die 11 and the second die 12 may be arranged offset, or even side by side, that is, the back surface 12b of the second die 12 is also exposed on the front surface 14a of the encapsulation layer 14.

[0123] In this embodiment, the area of the first die 11 is larger than the area of the second die 12. In other embodiments, the area of the second die 12 may also be larger than the area of the first die 11.

[0124] The second protective layer 120 covers the second pad 121 to protect the second pad 121 when the encapsulation layer 14 is thinned.

[0125] In this embodiment, the active surface 11a of the first die 11 is also provided with a first protective layer 110 to buffer the stress on the first pad 111 when the encapsulation layer 14 is thinned. In some embodiments, the first protective layer 110 may be omitted on the active surface 11a of the first die 11.

[0126] Both the first die 11 and the second die 12 are formed by dicing a wafer. Taking the first die 11 as an example, the wafer includes a wafer active surface and a wafer back surface, and the wafer active surface exposes the first pad 111 and an insulating layer (not shown) that protects the first pad 111. After the wafer is diced to form the first die 11, correspondingly, the first die 11 includes an active surface 11a and a back surface 11b, and the first pad 111 and the insulating layer electrically insulating and adjacent to the first pad 111 are exposed on the die active surface 11a.

[0127] The first protective layer 110 is applied on the active surface 11a of the first die 11. The application process of the first protective layer 110 may be: applying the first protective layer 110 on the wafer active surface before the wafer is diced into the first die 11, and dicing the wafer with the first protective layer 110 to form the first die 11 with the first protective layer 110, or may be: after the wafer is diced into the first die 11, applying the first protective layer 110 on the active surface 11a of the first die 11.

[0128] The first protective layer 110 and / or the second protective layer 120 are made of insulating materials, specifically, they can be organic polymer insulating materials or inorganic insulating materials. Examples of organic polymer insulating materials include polyimide, epoxy resin, ABF (Ajinomoto buildup film), PBO (Polybenzoxazole), organic polymer films, organic polymer composites, or other organic materials with similar insulating properties, etc.

[0129] The organic polymer insulating material can be laminated on the first pad 111 and the insulating layer between adjacent first pads 111 / the second pad 121 and the insulating layer between adjacent second pads 121 through a) a lamination process, or b) first coated or printed on the first pad 111 and the insulating layer between adjacent first pads 111 / the second pad 121 and the insulating layer between adjacent second pads 121 and then cured, or c) cured on the first pad 111 and the insulating layer between adjacent first pads 111 / the second pad 121 and the insulating layer between adjacent second pads 121 through an injection molding process.

[0130] When the materials of the first protective layer 110 and / or the second protective layer 120 are inorganic materials such as silicon dioxide or silicon nitride, they can be formed on the first pad 111 and the insulating layer between adjacent first pads 111 / the second pad 121 and the insulating layer between adjacent second pads 121 through a deposition process.

[0131] The first protective layer 110 and / or the second protective layer 120 can include one or more layers.

[0132] Before dicing, the wafer can be thinned from the back to reduce the thickness of the first die 11 and / or the second die 12.

[0133] The pre-wired substrate 13 includes pre-wired lines 130 and insulating materials filled between the pre-wired lines 130.

[0134] The pre-wired substrate 13 can be a single piece surrounding the first die assembly 10 or multiple pieces.

[0135] In this embodiment, as shown in Figure 3 the pre-wired substrates 13 of each group of components to be encapsulated 3 are separated. In some embodiments, the pre-wired substrates 13 of each group of components to be encapsulated 3 can also be connected together.

[0136] The carrier plate 2 is a rigid plate member and can include a plastic plate, a glass plate, a ceramic plate, a metal plate, etc.

[0137] In some embodiments, the thickness of the pre-wired substrate 13 is less than the thickness of the die stack structure. When multiple groups of components to be packaged 3 are disposed on the surface of the carrier 2, one solution may include:

[0138] a) The front surfaces 13a of multiple pre-wired substrates 13 face the carrier 2, and multiple pre-wired substrates 13 are first arranged on the carrier 2; specifically, a whole-surface adhesive layer may be coated on the surface of the carrier 2, and multiple pre-wired substrates 13 are placed on the adhesive layer;

[0139] b) The first protective layers 110 on multiple first dies 11 face another carrier, and multiple first dies 11 are arranged on the other carrier. The second protective layers 120 on multiple second dies 12 face yet another carrier, and multiple second dies 12 are arranged on the yet another carrier. Specifically, a whole-surface adhesive layer may be coated on the surfaces of the two carriers; an adhesive layer is provided on the back surfaces 11b of multiple first dies 11 and / or the back surfaces 12b of multiple second dies 12. The two carriers are aligned, and the back surfaces 11b of the first dies 11 are bonded to the back surfaces 12b of the second dies 12 to form a die stack structure; the other carrier is removed;

[0140] c) The die stack structure faces the through-opening 133 of the pre-wired substrate 13. The yet another carrier is aligned with the carrier 2, and the die stack structure is fixed to the carrier 2 at the bottom of the through-opening 133; the yet another carrier is removed.

[0141] Steps a) and b) are not in a sequential order and may also be performed simultaneously.

[0142] The adhesive layer on the surface of each carrier may be made of an easily peelable material so as to peel off the corresponding carrier. For example, a thermal separation material that can lose its adhesiveness by heating or a UV separation material that can lose its adhesiveness by UV irradiation may be used.

[0143] In another solution, step a) is performed first; then, in step b), the first protective layers 110 on multiple first dies 11 face the through-opening 133 of the pre-wired substrate 13 and are first fixed on the carrier 2; afterwards, the carrier on which multiple second dies 12 are arranged is aligned with the carrier 2, and the back surfaces 11b of the first dies 11 are bonded to the back surfaces 12b of the second dies 12 to form a die stack structure; the carrier carrying multiple second dies 12 is removed.

[0144] In another solution, the first protective layers 110 on the multiple first dies 11 face the carrier 2. First, the multiple first dies 11 are arranged on the carrier 2. Then, the front faces 13a of the multiple pre-wired substrates 13 face the carrier 2, and the through openings 133 of each pre-wired substrate 13 are aligned with one first die 11, and the multiple pre-wired substrates 13 are arranged on the carrier 2. After that, the carrier carrying the multiple second dies 12 is aligned with the carrier 2, and the back faces 11b of the first dies 11 are bonded to the back faces 12b of the second dies 12 to form a die stack structure. The carrier carrying the multiple second dies 12 is removed.

[0145] In some embodiments, the thickness of the pre-wired substrate 13 is greater than the thickness of the die stack structure. When multiple groups of components to be encapsulated 3 are arranged on the surface of the carrier 2, one solution may include: first performing the above steps a) and b), and then in step c), the through openings 133 of the pre-wired substrate 13 face the die stack structure, the another carrier is aligned with the carrier 2, and the pre-wired substrate 13 is fixed to the another carrier; the carrier 2 is removed.

[0146] One group of components to be encapsulated 3 is located in a region on the surface of the carrier 2, which is convenient for subsequent cutting. Multiple groups of components to be encapsulated 3 are fixed on the surface of the carrier 2 to simultaneously manufacture multiple MCM package structures 1, which is beneficial to mass production and cost reduction.

[0147] Next, referring to Figure 2 in step S2 and Figure 5 as shown, a molding compound layer 14 embedding each group of components to be encapsulated 3 is formed on the surface of the carrier 2; referring to Figure 6 as shown, the molding compound layer 14 is thinned until the second protective layer 120 and the back face 13b of the pre-wired substrate 13 are exposed.

[0148] The material of the molding compound layer 14 can be epoxy resin, polyimide resin, benzocyclobutene resin, polybenzoxazole resin, polybutylene terephthalate, polycarbonate, polyethylene terephthalate, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyethersulfone, polyamide, polyurethane, ethylene-vinyl acetate copolymer or polyvinyl alcohol, etc. The material of the molding compound layer 14 can also be various polymers or composites of resins and polymers. Correspondingly, the encapsulation can be carried out by filling a liquid molding compound between each first die assembly 10 and each pre-wired substrate 13 and then curing at a high temperature by a molding die. In some embodiments, the molding compound layer 14 can also be formed by molding methods for plastic materials such as hot pressing molding and transfer molding.

[0149] The molding compound layer 14 can include opposite front face 14a and back face 14b.

[0150] Referring to Figure 6 as shown, the thinning of the molding compound layer 14 is performed from the back face 14b, and mechanical grinding such as grinding with a grinding wheel can be used.

[0151] Specifically, when thinning the encapsulation layer 14, when the thickness of the pre-wired substrate 13 is less than the thickness of the first die assembly 10 and the back surface 13b of the pre-wired substrate 13 is exposed, a part of the height of the second protective layer 120 has been removed; when the thickness of the pre-wired substrate 13 is greater than the thickness of the first die assembly 10 and the second protective layer 120 is exposed, a part of the height of the back surface 13b of the pre-wired substrate 13 has been removed.

[0152] During the formation and grinding of the encapsulation layer 14, the second protective layer 120 can prevent the second pads 121, the second die 12 and the electrical interconnection structures and various devices in the first die 11 from being damaged; the first protective layer 110 can buffer the stress on the first pads 111.

[0153] This step forms the encapsulation bodies of the respective packages to be encapsulated 3.

[0154] Next, referring to Figure 2 the steps S3 in Figure 7 as shown, a second opening 120a is formed in the second protective layer 120 to expose the second pads 121; a second conductive trace 16 is formed on the second protective layer 120, the second pads 121, the back electrical connection points 132 and the back surface 14b of the encapsulation layer 14 to electrically connect the second die 12 in the group to the pre-wired lines 130; a second dielectric layer 19 embedding the second conductive trace 16 is formed.

[0155] In this embodiment, the second conductive trace 16 includes one layer. Forming the second conductive trace 16 includes the following steps S31 to S38.

[0156] Step S31: A photoresist layer is formed on the second protective layer 120 of each second die 12, the back surface 13b of each pre-wired substrate 13 and the back surface 14b of the encapsulation layer 14.

[0157] In this step S31, in an alternative solution, the formed photoresist layer can be a photosensitive film. The photosensitive film can be torn off from the tape and applied on the second protective layer 120 of each second die 12, the back surface 13b of each pre-wired substrate 13 and the back surface 14b of the encapsulation layer 14. In other alternative solutions, the photoresist layer can also be formed by first coating a liquid photoresist and then heating and curing it.

[0158] Step S32: The photoresist layer is exposed and developed to form a patterned photoresist layer.

[0159] This step S32 patterns the photoresist layer. In other alternative solutions, other easily removable sacrificial materials can also be used instead of the photoresist layer.

[0160] Step S33: Using the patterned photoresist layer as a mask, dry-etch or wet-etch the second protective layer 120 to form a plurality of second openings 120a, so as to expose partial areas of the respective second pads 121. One second opening 120a may expose a partial area of one second pad 121. In other embodiments, one second opening 120a may also expose partial areas of two or more second pads 121.

[0161] For the material of the second protective layer 120 being a laser-reactive material, such as epoxy resin, etc., the second opening 120a can be formed by the way of laser irradiation to make it denatured. For the material of the second protective layer 120 being a photosensitive material, such as polyimide, etc., the second opening 120a can be formed by the way of exposure first and then development. For the material of the second protective layer 120 being a material that can be dry-etched or wet-etched, such as silicon dioxide, silicon nitride, etc., the second opening 120a can be formed by dry-etching or wet-etching.

[0162] Step S34: Ash to remove the remaining photoresist layer.

[0163] Step S35: Form a photoresist layer on the second protective layer 120 of each second die 12, the second pads 121 exposed by the second protective layer 120, the back surface 13b of each pre-wired substrate 13, and the back surface 14b of the encapsulation layer 14.

[0164] The forming method of the photoresist layer can refer to the forming method of the photoresist layer in step S31.

[0165] Step S36: Expose and develop the photoresist layer, and retain the photoresist layer in a first predetermined area, the first predetermined area being complementary to the area where the metal pattern block 16a of the second conductive trace 16 to be formed is located.

[0166] Step S37: Fill a metal layer in the complementary area of the first predetermined area to form the metal pattern block 16a of the second conductive trace 16.

[0167] The positions of some of the metal pattern blocks 16a are such that they can electrically connect the back electrical connection points 132 and the second pads 121 to achieve electrical connection between the pre-wired substrate 13 and the second die 12. The positions of some of the metal pattern blocks 16a are such that they can electrically connect multiple back electrical connection points 132 to achieve circuit layout or electrical conduction of these back electrical connection points 132. In addition, there can also be positions of some of the metal pattern blocks 16a such that they can electrically connect multiple second pads 121 to achieve circuit layout or electrical conduction of these second pads 121.

[0168] This step S37 can be completed by an electroplating process. The processes of electroplating copper or aluminum are relatively mature.

[0169] Specifically, before forming the photoresist layer in step S35, a seed layer can be formed on the second protective layer 120 of each second die 12, the second pads 121 exposed by the second protective layer 120, the back surface 13b of each pre-wiring substrate 13, and the back surface 14b of the encapsulation layer 14 by physical vapor deposition or chemical vapor deposition. The seed layer can serve as a power supply layer for electroplating copper or aluminum.

[0170] Electroplating can include electrolytic electroplating or electroless plating. Electrolytic electroplating is to use the workpiece to be electroplated as the cathode and electrolyze the electrolyte solution, so as to form a layer of metal on the workpiece to be electroplated. Electroless plating is a method of reducing metal ions in the solution and depositing them on the workpiece to be electroplated to form a metal layer. In some embodiments, a metal pattern block 16a can also be formed by a method of sputtering first and then etching.

[0171] Step S38: Ashing to remove the remaining photoresist layer in the first predetermined area.

[0172] After ashing, the seed layer in the first predetermined area is removed by dry etching or wet etching.

[0173] The upper surface of the metal pattern block 16a of the second conductive trace 16 can be made flat by a polishing process, such as chemical mechanical polishing.

[0174] It should be noted that the metal pattern block 16a of the second conductive trace 16 in this step S3 is arranged according to design requirements. The distribution of the second conductive traces 16 in different groups of components to be encapsulated 3 can be the same or different.

[0175] In addition, in some embodiments, the second conductive trace 16 can also include two or more layers, that is, it has two or more metal pattern layers.

[0176] In the step of forming the second dielectric layer 19, in order to prevent the encapsulation layer 14 from being scratched during the process, the second dielectric layer 19 can also be formed on the back surface 14b of the encapsulation layer 14.

[0177] The second dielectric layer 19 is an insulating material, specifically an organic polymer insulating material or an inorganic insulating material. The organic polymer insulating material is, for example, polyimide, epoxy resin, ABF (Ajinomotobuildup film), PBO (Polybenzoxazole), organic polymer film, organic polymer composite material, or other organic materials with similar insulating properties.

[0178] The organic polymer insulating material can be laminated on the second conductive trace 16, the second protective layer 120 that does not cover the second conductive trace 16, the back surface 10b of the pre-wired substrate 10, and the back surface 14b of the encapsulation layer 14 by a) a lamination process, or b) first coated on the second conductive trace 16, the second protective layer 120 that does not cover the second conductive trace 16, the back surface 10b of the pre-wired substrate 10, and the back surface 14b of the encapsulation layer 14 and then cured, or c) cured on the second conductive trace 16, the second protective layer 120 that does not cover the second conductive trace 16, the back surface 10b of the pre-wired substrate 10, and the back surface 14b of the encapsulation layer 14 by an injection molding process.

[0179] When the material of the second dielectric layer 19 is an inorganic insulating material such as silicon dioxide or silicon nitride, it can be formed on the second conductive trace 16 and the back surface 14b of the encapsulation layer 14 by a deposition process.

[0180] Compared with the inorganic insulating material, the organic polymer insulating material has a smaller tensile stress, which can prevent the encapsulation body from warping when the second dielectric layer 19 is formed over a large area.

[0181] The second dielectric layer 19 can include one or more layers.

[0182] After that, referring to Figure 2 the steps S4 in Figure 8 as shown, the carrier plate 2 is removed to expose the active surface 11a of the first die 11, the front surface 13a of the pre-wired substrate 13, and the front surface 14a of the encapsulation layer 14; a first conductive trace 15 is formed on the first pad 111, the front electrical connection point 131, and the front surface 14a of the encapsulation layer 14 to electrically connect the first die 11 in the group to the pre-wired circuit 130.

[0183] Referring to Figure 8 as shown, after the carrier plate 2 is removed, a first support plate 4 can be provided on the second dielectric layer 19.

[0184] The carrier plate 2 can be removed by existing removal methods such as laser lift-off, UV irradiation, etc.

[0185] The first support plate 4 can play a supporting role in the subsequent processes of forming the first conductive trace 15, and / or forming the conductive bumps 17, and / or forming the first dielectric layer 18.

[0186] The first support plate 4 is a rigid plate member and can include a glass plate, a ceramic plate, a metal plate, etc.

[0187] In this embodiment, since the active surface 11a of the first die 11 is provided with a first protective layer 110, after the carrier plate 2 is removed, the first protective layer 110 is exposed. Before manufacturing the first conductive trace 15, a first opening 110a is first formed in the first protective layer 110 to expose the first pad 111.

[0188] For the material of the first protective layer 110 being a laser-reactive material, such as epoxy resin, etc., the first opening 110a can be formed by a method of making it denatured through laser irradiation. For the material of the first protective layer 110 being a photosensitive material, such as polyimide, etc., the first opening 110a can be formed by a method of first exposing and then developing. For the material of the first protective layer 110 being a material that can be dry-etched or wet-etched, such as silicon dioxide, silicon nitride, etc., the first opening 110a can be formed by dry etching or wet etching.

[0189] In some embodiments, among the multiple groups of components to be encapsulated 3 in step S1, specifically in the first die assembly 10, it is also possible that the first protective layer 110 has a first opening 110a exposing the first pad 111.

[0190] The forming method of the metal pattern block 15a in the first conductive trace 15 can refer to the forming method of the metal pattern block 16a in the second conductive trace 16. The layout of the first conductive trace 15 can be determined according to a predetermined layout.

[0191] In this embodiment, the first conductive trace 15 includes one layer.

[0192] A partial number of metal pattern blocks 15a are selectively electrically connected to the front electrical connection points 131 and the first pad 111 to realize the electrical connection between the pre-wiring substrate 13 and the first die 11; a partial number of metal pattern blocks 15a are selectively electrically connected to the front electrical connection points 131 to lead out these front electrical connection points 131 through the conductive bumps 17. In addition, there can also be a partial number of metal pattern blocks 15a selectively electrically connected to multiple front electrical connection points 131 to realize the circuit layout or electrical conduction of these front electrical connection points 131; there can also be a partial number of metal pattern blocks 15a selectively electrically connected to multiple first pads 111 to realize the circuit layout or electrical conduction of these first pads 111.

[0193] In other embodiments, the first conductive trace 15 can include two or more metal pattern layers.

[0194] Next, referring to Figure 2 the steps S5 in Figure 8 and as shown in

[0195] This step S5 may include steps S51 - S55.

[0196] Step S51: Form a photoresist layer on the metal pattern block 15a, the exposed insulating material layer on the front side 13a of the pre - wired substrate, and the front side 14a of the encapsulation layer 14.

[0197] In this step S51, in an alternative solution, the formed photoresist layer can be a photosensitive film. The photosensitive film can be torn off from the tape and pasted on the metal pattern block 15a, the exposed insulating material layer on the front side 13a of the pre - wired substrate, and the front side 14a of the encapsulation layer 14. In other alternative solutions, the photoresist layer can also be formed by first coating a liquid photoresist and then heating and curing it.

[0198] Step S52: Expose and develop the photoresist layer, and retain the photoresist in the second predetermined area. The second predetermined area is complementary to the area where the conductive bump 17 is to be formed.

[0199] This step S52 patterns the photoresist layer. In other alternative solutions, other easily removable sacrificial materials can also be used instead of the photoresist layer.

[0200] Step S53: Fill the complementary area of the second predetermined area with a metal layer to form the conductive bump 17.

[0201] This step S53 can be completed by an electroplating process. The processes of electroplating copper or aluminum are relatively mature. Before electroplating copper or aluminum, a seed layer can also be deposited by physical vapor deposition or chemical vapor deposition first as a power supply layer.

[0202] Step S54: Ash to remove the remaining photoresist layer in the second predetermined area.

[0203] The upper surface of the conductive bump 17 can be made flat through a polishing process, such as chemical mechanical polishing.

[0204] Step S55: Refer to Figure 8 As shown, form a first dielectric layer 18 on the conductive bump 17, the metal pattern block 15a, the exposed insulating material layer on the front side 13a of the pre - wired substrate, and the front side 14a of the encapsulation layer 14; thin the first dielectric layer 18 until the conductive bump 17 is exposed.

[0205] The material and formation method of the first dielectric layer 18 can refer to the material and formation method of the second dielectric layer 19.

[0206] In the step of forming the first dielectric layer 18, to prevent the encapsulation layer 14 from being scratched during the process, the first dielectric layer 18 can also be formed on the front side 14a of the encapsulation layer 14 between adjacent groups of components to be encapsulated 3.

[0207] When the first dielectric layer 18 covers the conductive bumps 17, polish the first dielectric layer 18 until the conductive bumps 17 are exposed.

[0208] The first dielectric layer 18 may include one or more layers.

[0209] After the conductive bumps 17 are fabricated, a) In an alternative embodiment, as shown in Figure 8 the conductive bumps 17 serve as the external connection terminals of the MCM package structure 1.

[0210] b) In an alternative embodiment, after the conductive bumps 17 are exposed, an antioxidant layer is further formed on the conductive bumps 17.

[0211] The antioxidant layer may include: b1) a tin layer, or b2) a nickel layer and a gold layer stacked from bottom to top, or b3) a nickel layer, a palladium layer and a gold layer stacked from bottom to top. The antioxidant layer may be formed by an electroplating process. The material of the conductive bumps 17 may be copper, and the above antioxidant layer can prevent copper oxidation, thereby preventing the deterioration of the electrical connection performance caused by copper oxidation.

[0212] c) In an alternative embodiment, after the conductive bumps 17 are exposed, solder balls are further formed on the conductive bumps 17 for the flip-chip of the MCM package structure 1 (see Figure 1 shown).

[0213] After the conductive bumps 17 are formed, remove the first support plate 4 as shown in Figure 9 shown.

[0214] The first support plate 4 can be removed by existing removal methods such as laser lift-off, UV irradiation, etc.

[0215] After that, refer to step S6 in Figure 2 and Figure 9 as well as Figure 1 shown, cut to form a plurality of MCM package structures 1, and each MCM package structure 1 includes a group of components to be packaged 3.

[0216] For the embodiment in which the pre-wired substrates 13 of each group of components to be packaged 3 are connected together, the pre-wired substrates 13 are cut open during the cutting process of this step S6.

[0217] In the MCM package structure 1 formed through the above steps, on the one hand, the first die components 10 with opposite-facing active surfaces achieve the effects of small volume and compact structure of the MCM package structure 1. On the other hand, through the pre-wired substrate 13, not only the electrical connection between the first die 11 and the second die 12 is realized, but also the two-sided wiring on the front surface 14a and the back surface 14b of the encapsulation layer 14 is realized. Compared with the wiring on only one surface, the wiring density can be increased, and an MCM package structure 1 with more complex wiring and smaller volume can be formed.

[0218] The advantages of using the pre-wired substrate 13 are as follows: First, the fine wiring in the re-wiring layer is transferred to the pre-wired substrate 13, reducing the probability of short circuits, increasing the product yield, and at the same time reducing the number of layers of the first conductive trace 15 and / or the second conductive trace 16, thereby reducing the process complexity. Second, providing the pre-formed pre-wired substrate 13 allows for testing of the pre-wired substrate 13 before packaging, avoiding the use of known defective pre-wired substrates 13. Third, the pre-wired substrate 13 is a prefabricated substrate, and its manufacturing process is carried out independently of the packaging process, saving the packaging time of the entire packaging process.

[0219] In addition, the wiring layer that needs to be formed on the active surfaces 11a, 12a of the die is transferred to the pre-wired substrate 13. The pre-wired substrate 13 includes complex multi-circuits, and these complex multi-circuits are embedded in the packaging structure 1 by being electrically connected to the pads 111, 121 on the active surfaces 11a, 12a of the die, which can improve the performance of the entire MCM packaging structure 1.

[0220] The second embodiment of the present invention provides Figure 1 Another manufacturing method of the MCM packaging structure 1 in Figure 10 is a flowchart of the manufacturing method. Figure 11 In Figure 12 is Figure 10 The intermediate structure schematic diagram corresponding to the process in

[0221] Referring to Figure 10 In Figure 2 As shown, the manufacturing method of this embodiment is substantially the same as the manufacturing method of the embodiment shown in Figure 2 The difference is only that:

[0222] Step S2', referring to Figure 5 As shown, a plastic encapsulation layer 14 embedding each group of components to be packaged 3 is formed on the surface of the carrier 2;

[0223] Step S3', referring to Figure 11 As shown, the carrier 2 is removed to expose the active surface 11a of the first die 11, the front surface 13a of the pre-wired substrate 13, and the front surface 14a of the plastic encapsulation layer 14; a first conductive trace 15 is formed on the first pad 111, the front electrical connection point 131, and the front surface 14a of the plastic encapsulation layer 14 to electrically connect the first die 11 within the group to the pre-wired circuit 130;

[0224] Step S4', continuing to refer to Figure 11 As shown, a conductive bump 17 is formed on the first conductive trace 15 and a first dielectric layer 18 embedding the first conductive trace 15 and the conductive bump 17 is formed, and the conductive bump 17 is exposed outside the first dielectric layer 18;

[0225] Step S5', referring to Figure 12As shown, the encapsulation layer 14 is thinned until the back surface 13b of the second protective layer 120 and the pre-wired substrate 13 is exposed; a second opening 120a is formed in the second protective layer 120 to expose the second pad 121; a second conductive trace 16 is formed on the second protective layer 120, the second pad 121, the back electrical connection point 132, and the back surface 14b of the encapsulation layer 14 to electrically connect the second die 12 within the group to the pre-wired line 130; a second dielectric layer 19 embedding the second conductive trace 16 is formed.

[0226] Step S2' can refer to step S2 of the foregoing embodiment, step S3' can refer to step S4 of the foregoing embodiment, step S4' can refer to step S5 of the foregoing embodiment, and step S5' can refer to steps S2 and S3 of the foregoing embodiment.

[0227] Specifically, in this step 3', referring to Figure 11 As shown, after removing the carrier board 2, a first support plate 4 can be provided on the back surface 14b of the encapsulation layer 14; the first support plate 4 is removed after step S4', and a second support plate 5 is provided on the conductive bumps 17 and the first dielectric layer 18; the second support plate 5 is removed after step S5'.

[0228] In other words, first remove the carrier board 2, form the first conductive trace 15, the conductive bumps 17, and the first dielectric layer 18 embedding the first conductive trace 15 and the conductive bumps 17; then a second support plate 5 is provided on the first dielectric layer 18 and the conductive bumps 17, the encapsulation layer 14 is thinned, and the second conductive trace 16 and the second dielectric layer 19 are formed.

[0229] In some embodiments, the encapsulation layer 14 can also be thinned in step S2'.

[0230] Figure 13 is a schematic cross-sectional structure diagram of the MCM package structure of the third embodiment of the present invention. Referring to Figure 13 As shown, the MCM package structure 6 in this embodiment is substantially the same as the MCM package structure 1 of the foregoing embodiment, except that: the first protective layer 110 is omitted, and a third dielectric layer 20 is provided on the active surface 11a of the first die 11, the front surface 13a of the pre-wired substrate 13, and the front surface 14a of the encapsulation layer 14; the third dielectric layer 20 has a third opening 20a exposing the first pad 111 and the front electrical connection point 131; the first conductive trace 15 is located on the first pad 111, the front electrical connection point 131, and the third dielectric layer 20.

[0231] Correspondingly, for the manufacturing method, the difference from the previous two embodiments is as follows: in step S4 / S3', after removing the carrier substrate 2 to expose the active surface 11a of the first die 11, the front surface 13a of the pre-wired substrate 13, and the front surface 14a of the encapsulation layer 14: a third dielectric layer 20 is formed on the exposed active surface 11a of the first die 11, the front surface 13a of the pre-wired substrate 13, and the front surface 14a of the encapsulation layer 14; a plurality of third openings 20a are formed in the third dielectric layer 20, and the third openings 20a expose the first pads 111 and the front electrical connection points 131; then a first conductive trace 15 is formed on the first pads 111, the front electrical connection points 131, and the third dielectric layer 20.

[0232] The material of the third dielectric layer 20 refers to the materials of the first dielectric layer 18 and the second dielectric layer 19.

[0233] For the material of the third dielectric layer 20 being a laser-responsive material, such as epoxy resin, etc., the third openings 20a can be formed by means of laser irradiation to make it denatured. For the material of the third dielectric layer 20 being a photosensitive material, such as polyimide, etc., the third openings 20a can be formed by means of exposure first and then development. For the material of the third dielectric layer 20 being a material that can be dry-etched or wet-etched, such as silicon dioxide, silicon nitride, etc., the third openings 20a can be formed by dry-etching or wet-etching.

[0234] Figure 14 It is a schematic cross-sectional structure diagram of the MCM package structure of the fourth embodiment of the present invention. Refer to Figure 14 As shown, the MCM package structure 7 in this embodiment is substantially the same as the MCM package structures 1 and 6 of the previous embodiments, and the difference is only that: the conductive bumps 17 are connected to the second conductive traces 16; correspondingly, the second dielectric layer 19 embeds the second conductive traces 16 and the conductive bumps 17, the conductive bumps 17 are exposed outside the second dielectric layer 19, and the first dielectric layer 18 embeds the first conductive traces 15.

[0235] Correspondingly, for the manufacturing method, the difference from the previous three embodiments is as follows: in step S3 / S5', after forming the second conductive traces 16, conductive bumps 17 are formed on the second conductive traces 16 and the second dielectric layer 19 that embeds the second conductive traces 16 and the conductive bumps 17 is formed, and the conductive bumps 17 are exposed outside the second dielectric layer 19; in step S5 / S4', the first dielectric layer 18 that embeds the first conductive traces 15 is formed.

[0236] Figure 15 It is a schematic cross-sectional structure diagram of the MCM package structure of the fifth embodiment of the present invention. Refer to Figure 15As shown, the MCM packaging structure 8 in this embodiment is substantially the same as the MCM packaging structures 1, 6, and 7 and their manufacturing methods in the foregoing embodiments, with the only difference being that: the first die assembly 10 is replaced by a die, for example, replaced by the first die 11. Correspondingly, the conductive bumps 17 are connected to the backside electrical connection points 132. The conductive bumps 17 are exposed outside the second dielectric layer 19, and the first dielectric layer 18 covers the conductive traces 15.

[0237] In other embodiments, the first die assembly 10 may also be replaced by the second die 12, or replaced by a second die assembly, and the second die assembly includes a plurality of first dies 11, or a plurality of second dies 12. In other words, in the second die assembly, the active surfaces of the dies face the same direction.

[0238] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be subject to the scope defined by the claims.

Claims

1. An MCM packaging structure, characterized in that, Comprising: A first die assembly, at least including: a first die and a second die, the first die including a plurality of first pads located on the active surface of the first die, the second die including a plurality of second pads located on the active surface of the second die; a second protective layer covering the active surface of the second die, the second protective layer exposing the second pads; the active surfaces of the first die and the second die facing away from each other; A pre-wired substrate disposed around the first die assembly; pre-wired lines provided in the pre-wired substrate, the pre-wired lines including a front electrical connection point and a back electrical connection point, the front electrical connection point being exposed on the front of the pre-wired substrate, the back electrical connection point being exposed on the back of the pre-wired substrate; A molding layer covering the first die assembly and the pre-wired substrate, the back of the molding layer exposing the second protective layer, the second pads, and the back of the pre-wired substrate, the front of the molding layer exposing the active surface of the first die and the front of the pre-wired substrate; A first conductive trace located on the first pads, the front electrical connection point, and the front of the molding layer for electrically connecting the first die and the pre-wired lines; A second conductive trace located on the second pads, the back electrical connection point, and the back of the molding layer for electrically connecting the second die and the pre-wired lines; A conductive bump connected to the first conductive trace; A first dielectric layer embedding the first conductive trace and covering the side surfaces of the conductive bump, the surface of the conductive bump away from the first conductive trace being exposed outside the first dielectric layer; and A second dielectric layer embedding the second conductive trace.

2. The MCM package structure according to claim 1, characterized in that, The first die assembly is a die stack structure.

3. The MCM packaging structure according to claim 1 or 2, characterized in that, The conductive bump connected to the first conductive trace is replaced with: the conductive bump connected to the second conductive trace; correspondingly, the second dielectric layer embeds the second conductive trace and covers the side surfaces of the conductive bump, the surface of the conductive bump away from the second conductive trace being exposed outside the second dielectric layer, and the first dielectric layer embeds the first conductive trace.

4. The MCM package structure according to claim 1, wherein, Further comprising: A third dielectric layer located on the active surface of the first die, the front of the pre-wired substrate, and the front of the molding layer; The third dielectric layer exposes the first pads and the front electrical connection point; the first conductive trace is located on the first pads, the front electrical connection point, and the third dielectric layer.

5. The MCM package structure according to claim 1, wherein, Further comprising: A first protective layer covering the active surface of the first die, the first protective layer exposing the first pads; the front of the molding layer exposes the first protective layer and the first pads.

6. The MCM packaging structure according to claim 1, characterized in that, The material of the second protective layer is an organic polymer insulating material, an inorganic insulating material, or a composite material; and / or the material of the first dielectric layer is an organic polymer insulating material, an inorganic insulating material, or a composite material; and / or the material of the second dielectric layer is an organic polymer insulating material, an inorganic insulating material, or a composite material.

7. A manufacturing method of an MCM packaging structure, characterized in that Comprising: Provided are a carrier board and multiple groups of components to be encapsulated carried on the carrier board. Each group of the components to be encapsulated includes: a pre-wired substrate having a through opening, and a first die assembly located within the through opening; pre-wired lines are provided within the pre-wired substrate, and the pre-wired lines include a front electrical connection point and a back electrical connection point. The front electrical connection point is exposed on the front surface of the pre-wired substrate, and the back electrical connection point is exposed on the back surface of the pre-wired substrate; the first die assembly at least includes: a first die and a second die. The first die includes a plurality of first pads located on the active surface of the first die, and the second die includes a plurality of second pads located on the active surface of the second die; a second protective layer covers the active surface of the second die; the active surfaces of the first die and the second die face away from each other; the front surface of the pre-wired substrate and the active surface of the first die face the carrier board. A molding layer embedding each group of the components to be encapsulated is formed on the surface of the carrier board; the molding layer is thinned until the second protective layer and the back surface of the pre-wired substrate are exposed. A second opening is formed within the second protective layer to expose the second pads; second conductive traces are formed on the back surface of the second protective layer, the second pads, the back electrical connection point, and the molding layer to electrically connect the second die within the group and the pre-wired lines; a second dielectric layer embedding the second conductive traces is formed. The carrier board is removed to expose the active surface of the first die, the front surface of the pre-wired substrate, and the front surface of the molding layer; first conductive traces are formed on the first pads, the front electrical connection point, and the front surface of the molding layer to electrically connect the first die within the group and the pre-wired lines. Conductive bumps are formed on the first conductive traces and a first dielectric layer embedding the first conductive traces and the conductive bumps is formed, and the conductive bumps are exposed outside the first dielectric layer. Cutting is performed to form multiple MCM package structures, and each MCM package structure includes a group of the components to be encapsulated.

8. The manufacturing method of the MCM packaging structure according to claim 7, characterized in that, After the step of forming the second conductive traces, conductive bumps are formed on the second conductive traces and a second dielectric layer embedding the second conductive traces and the conductive bumps is formed, and the conductive bumps are exposed outside the second dielectric layer; the step of forming conductive bumps on the first conductive traces and forming a first dielectric layer embedding the first conductive traces and the conductive bumps, with the conductive bumps exposed outside the first dielectric layer, is replaced by: forming a first dielectric layer embedding the first conductive traces.

9. The manufacturing method of the MCM packaging structure according to claim 7, characterized in that First, the carrier board is removed. After forming the first conductive traces, the conductive bumps, and the first dielectric layer embedding the first conductive traces and the conductive bumps; then, a support board is provided on the first dielectric layer and the conductive bumps, and the molding layer is thinned to form the second conductive traces and the second dielectric layer.

10. The manufacturing method of the MCM packaging structure according to claim 7, characterized in that, After removing the carrier substrate, a third dielectric layer is formed on the active surface of the exposed first die, the front surface of the pre-wired substrate, and the front surface of the encapsulation layer; a plurality of third openings are formed in the third dielectric layer, and the third openings expose the first pads and the front electrical connection points; the first conductive traces are formed on the first pads, the front electrical connection points, and the third dielectric layer.

11. The manufacturing method of the MCM packaging structure according to claim 7, characterized in that, In the first die assembly, the active surface of the first die is covered with a first protective layer; the first protective layer faces the carrier substrate; the first protective layer is provided with a first opening exposing the first pads, or after the step of removing the carrier substrate and before the step of forming the first conductive traces, a first opening is formed in the first protective layer to expose the first pads.

12. The manufacturing method of the MCM package structure according to any one of claims 7 to 11, characterized in that, The pre-wired substrates of each group of the to-be-encapsulated components are connected together and are cut open in the step of cutting to form a plurality of MCM packaging structures.

13. An MCM packaging structure, characterized in that, Comprising: A die, the die includes a plurality of pads located on the active surface of the die; A pre-wired substrate disposed around the die; the pre-wired substrate is provided with pre-wired lines, the pre-wired lines include front electrical connection points and back electrical connection points, the front electrical connection points are exposed on the front surface of the pre-wired substrate, and the back electrical connection points are exposed on the back surface of the pre-wired substrate; An encapsulation layer covering the die and the pre-wired substrate, the front surface of the encapsulation layer exposes the active surface of the die and the front electrical connection points; Conductive traces located on the pads, the front electrical connection points, and the front surface of the encapsulation layer for electrically connecting the die and the pre-wired lines; Conductive bumps connected to the back electrical connection points; A first dielectric layer embedding the conductive traces; A second dielectric layer covering the side surfaces of the conductive bumps, and the surface of the conductive bumps away from the back electrical connection points is exposed outside the second dielectric layer.

14. The MCM packaging structure according to claim 13, wherein The second die assembly replaces the die, and the second die assembly includes a plurality of dies with the active surfaces of the plurality of dies facing the same direction.

15. A manufacturing method of an MCM packaging structure, characterized in that Comprising: Providing a carrier substrate and multiple groups of to-be-encapsulated components carried on the carrier substrate, each group of the to-be-encapsulated components includes: a pre-wired substrate having a through opening, and a die located in the through opening; the pre-wired substrate is provided with pre-wired lines, the pre-wired lines include front electrical connection points and back electrical connection points, the front electrical connection points are exposed on the front surface of the pre-wired substrate, and the back electrical connection points are exposed on the back surface of the pre-wired substrate; the die includes a plurality of pads located on the active surface of the die; the front surface of the pre-wired substrate and the active surface of the die face the carrier substrate; Forming an encapsulation layer on the surface of the carrier substrate to embed each group of the to-be-encapsulated components; thinning the encapsulation layer until the back surface of the pre-wired substrate is exposed; Removing the carrier substrate to expose the active surface of the die, the front surface of the pre-wired substrate, and the front surface of the encapsulation layer; forming conductive traces on the pads, the front electrical connection points, and the front surface of the encapsulation layer to electrically connect the die and the pre-wired lines within the group; forming a first dielectric layer embedding the conductive traces; Form a conductive bump on the back electrical connection point and form a second dielectric layer covering the side surface of the conductive bump, with the surface of the conductive bump away from the back electrical connection point exposed outside the second dielectric layer; Cut to form a plurality of MCM package structures, each of the MCM package structures including a set of the components to be packaged.

16. The method for manufacturing the MCM package structure according to claim 15, characterized in that, Replace the die with a second die assembly, the second die assembly including a plurality of dies with the active surfaces of the plurality of dies facing the same direction.

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