A power amplifier module and an electronic device

Abstract

This application provides a power amplifier module, which includes a first power transistor and a barrier substrate. A metal layer is plated on the first side of the barrier substrate, and the material between the first and second sides of the barrier substrate is an insulating material. The source of the first power transistor is electrically connected to the metal layer, and the drain of the first power transistor is used to output radio frequency (RF) signals. A printed circuit board (PCB) is surface-mounted or embedded on the second side of the barrier substrate. Thus, due to the isolation provided by the barrier substrate, the source of the first power transistor is not grounded, and RF signals can be fed into the source of the first power transistor. The power amplifier integrating the first power transistor can employ a high-efficiency architecture, improving the power amplifier's amplification efficiency.

Description

Technical Field

[0001] This application relates to the field of circuits, and more particularly to a power amplifier module and an electronic device. Background Technology

[0002] Power transistors are a common electronic component in power amplifier modules. Currently, common power amplifiers typically use common-source and common-gate amplifier circuits to amplify signals.

[0003] In existing amplifier circuits, the bare power transistor die is typically mounted directly on a printed circuit board (PCB). The source of the power transistor die is shorted to the bottom of the chip via a via. During assembly, the bottom of the chip is directly surface-mounted or embedded in the PCB, allowing the source of the power transistor die to be electrically connected to the PCB, and the source of the power transistor die is directly grounded. The gate and drain of the power transistor die serve as the input and output terminals of the power amplifier, respectively.

[0004] In recent years, high-efficiency power amplifier architectures such as stacked power amplifiers have been proposed. In these high-efficiency architectures using series power amplifiers, the RF signal of the power transistor die needs to be partially or completely fed from the source. However, once the source of the power transistor die is grounded, no RF signal can be fed in. Therefore, power amplifiers integrating existing conventional power transistor dies cannot utilize high-efficiency power amplifier architectures, resulting in low power amplification efficiency. Summary of the Invention

[0005] This application provides a power amplifier module, which includes a first power transistor and a barrier substrate. A metal layer is plated on the first side of the barrier substrate, and the material between the first and second sides of the barrier substrate is an insulating material. The source of the first power transistor is electrically connected to the metal layer. A printed circuit board (PCB) is surface-mounted or embedded on the second side of the barrier substrate. Thus, due to the isolation provided by the barrier substrate, the source of the first power transistor is not grounded, and an radio frequency (RF) signal can be fed into the source. The power amplifier integrating the first power transistor can employ a high-efficiency architecture, improving the power amplifier's amplification efficiency.

[0006] The first aspect of this application provides a power amplifier module, which includes a first power transistor and a barrier substrate. A first metal layer is plated on a first side of the barrier substrate, and the material between the first side and the second side of the barrier substrate is an insulating material. The source of the first power transistor is electrically connected to the metal layer, and the drain of the first power transistor is used to output radio frequency signals. A printed circuit board (PCB) is surface-mounted or embedded on the second side of the barrier substrate.

[0007] In this application, the power amplifier module includes a first power transistor and a barrier substrate. A metal layer is plated on the first side of the barrier substrate, and the material between the first and second sides of the barrier substrate is an insulating material. The source of the first power transistor is electrically connected to the metal layer, and the drain of the first power transistor is used to output radio frequency (RF) signals. A printed circuit board (PCB) is surface-mounted or embedded on the second side of the barrier substrate. Thus, due to the isolation provided by the barrier substrate, the source of the first power transistor is not grounded, and RF signals can be fed into the source of the first power transistor. The power amplifier integrating the first power transistor can employ a high-efficiency architecture, improving the power amplifier's amplification efficiency.

[0008] In one possible implementation of the first aspect, the power amplification module further includes a second power transistor; the second power transistor is surface-mounted or embedded in a PCB; the source of the second power transistor is grounded, the gate of the second power transistor is used to receive radio frequency signals, and the drain of the second power transistor is electrically connected to the source of the first power transistor through the metal layer.

[0009] In the power amplifier module provided in this application, the first power transistor is a common-gate amplifier, and the second power transistor is a common-source amplifier. The first and second power transistors are combined to form a series power amplifier stack structure. The first power transistor is assembled on an isolation substrate, and the source of the first power transistor is connected to the drain of the second power transistor through the upper surface of the isolation substrate and a bond line. The drain of the first power transistor is the output terminal of the stacked power amplifier. After the radio frequency signal is input through the gate of the common-source amplifier, it is processed by the common-source amplifier, and then guided to the common-gate amplifier for further processing through the drain of the common-source amplifier. Finally, the processed signal is output from the drain of the common-gate amplifier, thus realizing multiple amplifications.

[0010] In this application, when the power amplifier module is working, the drain of the first power transistor is connected to a voltage of 2*Vdd, the gate of the first power transistor is connected to a voltage of Vdd+Vgs, and the gate of the second power transistor is connected to a voltage of Vgs.

[0011] Optionally, in this application, multiple first power transistors may be connected in series between the first power transistor and the second power transistor. The assembly method of the first power transistors connected in series is similar to the assembly method of the first power transistors described in the above embodiments, and is not limited here.

[0012] In one possible implementation of the first aspect, the power amplification module further includes a first capacitor; a first terminal of the first capacitor is electrically connected to the gate of the first power transistor, and a second terminal of the first capacitor is grounded.

[0013] In one possible implementation of the first aspect, the power amplification module further includes a second capacitor; a first terminal of the second capacitor is electrically connected to the gate of the first power transistor, and a second terminal of the second capacitor is electrically connected to the source of the first power transistor.

[0014] In this application, the stacked common-gate amplifier requires a small external gate capacitor Cg (i.e., the first capacitor) to ensure that the voltage swing on the gate of the common-gate power amplifier dynamically follows the voltage swing of the drain, preventing drain-gate voltage breakdown. In other words, while ensuring no breakdown, the voltage swing of the power amplifier is maximized to improve its performance. The transmission line between the gate and source is an inductive transmission line (i.e., a transmission line connected in series with the second capacitor), which can effectively reduce (or neutralize) Cgs, thus improving the power amplifier's performance.

[0015] In one possible implementation of the first aspect, the power amplification module further includes a third capacitor and a fourth capacitor; the first terminal of the third capacitor is electrically connected to the gate of the second power transistor and the first terminal of the fourth capacitor, and the second terminal of the third capacitor is grounded; the first terminal of the fourth capacitor is electrically connected to a signal input element.

[0016] In this application, the third capacitor and the fourth capacitor are both input internal matching capacitors; they are mainly used for input harmonic tuning of the amplifier, adjusting the impedance of higher harmonics, changing the output waveform of the power amplifier, and increasing the voltage of the fundamental component while the voltage swing does not exceed the limit, thereby increasing the output power and efficiency of the power amplifier.

[0017] In one possible implementation of the first aspect, the power amplification module further includes a fifth capacitor; a first terminal of the fifth capacitor is electrically connected to the drain of the second power transistor, and a second terminal of the fifth capacitor is electrically connected to the source of the first power transistor.

[0018] In one possible implementation of the first aspect, the power amplification module further includes a sixth capacitor, a seventh capacitor, an eighth capacitor, a ninth capacitor, and a tenth capacitor; a first terminal of the sixth capacitor is used for feeding an RF signal, and a second terminal of the sixth capacitor is electrically connected to the source of the first power transistor and the second terminal of the fifth capacitor; a first terminal of the seventh capacitor is electrically connected to the gate of the first power transistor and the first terminal of the eighth capacitor; a first terminal of the eighth capacitor is electrically connected to the signal input element; a first terminal of the ninth capacitor is electrically connected to the gate of the second power transistor and the first terminal of the tenth capacitor; and a first terminal of the tenth capacitor is electrically connected to the signal input element.

[0019] In one possible implementation of the first aspect, the fifth capacitor and the sixth capacitor are surface-mounted on the isolation substrate, or the fifth capacitor and the sixth capacitor are surface-mounted or embedded in the PCB.

[0020] In one possible implementation, for example, the first power transistor is the average transistor of a series-connected DHT, and the second power transistor is the peak transistor of a series-connected DHT. In this application, when the power amplifier module is operating, bonding wires are led out from the isolation substrate 2 to serve as the source bias voltage of the first power transistor, and bonding wires are led out from the drain of the first power transistor to serve as the output of the series-connected DHT and the drain bias voltage of the first power transistor. In this application, the gate of the first power transistor is the Main RF input point and gate bias feed point of the DHT power amplifier, and the gate of the second power transistor is the Peak RF input terminal and gate bias feed point of the DHT power amplifier. Optionally, the gates of the first and second power transistors can be connected to internal matching capacitors (seventh capacitor, eighth capacitor, ninth capacitor, and tenth capacitor) to further improve the performance of the DHT power amplifier. The purpose of harmonic tuning is to change the output waveform of the power amplifier by adjusting the impedance of higher harmonics, thereby increasing the voltage of the fundamental component and improving the output power and efficiency of the power amplifier while ensuring that the voltage swing does not exceed the limit. For a specific power amplifier, by designing an internal matching capacitor, its high-order harmonic impedance can be fixed at the optimal harmonic impedance position, thereby improving the output power and efficiency of the power amplifier.

[0021] In this application, the fifth and sixth capacitors are DC blocking capacitors. A bonding wire with an electrical length of one-quarter wavelength is connected between the fifth capacitor and the drain of the second power transistor. Optionally, a bonding wire can also be led out from the fifth capacitor to provide a drain bias voltage for the second power transistor.

[0022] In this application, when the power amplifier module is working, the drains of the first power transistor and the second power transistor are connected to the Vdd voltage, the gate of the first power transistor is connected to the Vgs_main voltage, the gate of the second power transistor is connected to the Vgs_PeaK voltage, and the bias voltage of the first power transistor is set to 0 volts.

[0023] In one possible implementation of the first aspect, the fifth capacitor and the sixth capacitor are surface-mounted on the isolation substrate, or the fifth capacitor and the sixth capacitor are surface-mounted or embedded in the PCB.

[0024] In one possible implementation of the first aspect, the first power transistor is a common-source power transistor, and the second power transistor is a common-gate power transistor.

[0025] In one possible implementation of the first aspect, the first power transistor is the main transistor in a series Doherty power amplifier structure, and the second power transistor is the peak transistor in a series Doherty power amplifier structure.

[0026] In one possible implementation of the first aspect, the isolation substrate is a diamond substrate with metal plated on the first and second sides and insulated from the sides.

[0027] As can be seen from the above technical solutions, the embodiments of this application have the following advantages:

[0028] In this application, the power amplifier module includes a first power transistor and a barrier substrate. A metal layer is plated on the first side of the barrier substrate, and the material between the first and second sides of the barrier substrate is an insulating material. The source of the first power transistor is electrically connected to the metal layer, and the drain of the first power transistor is used to output radio frequency (RF) signals. A printed circuit board (PCB) is surface-mounted or embedded on the second side of the barrier substrate. Thus, due to the isolation provided by the barrier substrate, the source of the first power transistor is not grounded, and the RF signal fed into the first power transistor from its source will not suffer loss. The power amplifier integrating the first power transistor can employ a high-power architecture, improving power amplification efficiency. Attached Figure Description

[0029] Figure 1 A schematic diagram of the power amplifier module provided in this application;

[0030] Figure 2 A schematic diagram of the power amplifier module provided in this application;

[0031] Figure 3 A schematic diagram of the power amplifier module provided in this application;

[0032] Figure 4 A schematic diagram of the power amplifier module provided in this application;

[0033] Figure 5 A schematic diagram of the power amplifier module provided in this application;

[0034] Figure 6 A schematic diagram of the power amplifier module provided in this application. Detailed Implementation

[0035] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention are within the scope of protection of the present invention.

[0036] The terms “first,” “second,” “third,” “fourth,” etc. (if present) in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a particular order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms “comprising” and “having,” and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0037] Power transistors are a common electronic component in power amplifier modules. Currently, common power amplifiers typically use common-source and common-gate amplifier circuits to amplify signals.

[0038] In existing amplifier circuits, the bare power transistor die is typically mounted directly on a printed circuit board (PCB). The source of the power transistor die is shorted to the bottom of the chip via a via. During assembly, the bottom of the chip is directly surface-mounted or embedded in the PCB, allowing the source of the power transistor die to be electrically connected to the PCB, and the source of the power transistor die is directly grounded. The gate and drain of the power transistor die serve as the input and output terminals of the power amplifier, respectively.

[0039] In recent years, high-efficiency power amplifier architectures such as stacked power amplifiers have been proposed. In these high-efficiency architectures using series power amplifiers, the RF signal of the power transistor die needs to be partially or completely fed from the source. However, once the source of the power transistor die is grounded, no RF signal can be fed in. Therefore, power amplifiers integrating existing conventional power transistor dies cannot utilize high-efficiency power amplifier architectures, resulting in low power amplification efficiency.

[0040] To address the problems of existing power amplifiers, this application provides a power amplifier module. The module includes a first power transistor and a barrier substrate. A metal layer is plated on the first side of the barrier substrate, and the material between the first and second sides of the barrier substrate is an insulating material. The source of the first power transistor is electrically connected to the metal layer, and the drain of the first power transistor is used to output radio frequency (RF) signals. A printed circuit board (PCB) is surface-mounted or embedded on the second side of the barrier substrate. Thus, due to the isolation provided by the barrier substrate, the source of the first power transistor is not grounded, and RF signals can be fed into the source. The power amplifier integrating the first power transistor can employ a high-efficiency architecture, improving the power amplifier's amplification efficiency.

[0041] Figure 1A schematic diagram of the power amplifier module provided in this application.

[0042] Please see Figure 1 In this application, the power amplifier module 10 includes: a first power transistor 101 and a barrier substrate 102. A first metal layer is plated on the first side of the barrier substrate 102, and the material between the first side and the second side of the barrier substrate 102 is an insulating material. The source of the first power transistor 101 is electrically connected to the metal layer, and the drain of the first power transistor is used to output radio frequency signals.

[0043] The second side of the barrier substrate is surface-mounted or embedded in a printed circuit board (PCB).

[0044] For example, the lower surface of the power transistor die is surface-mounted on a barrier substrate, and the source of the power transistor die is electrically connected to a metal layer plated on the barrier substrate. In this way, the metal layer plated on the barrier substrate is equivalent to the source of the power transistor die. The source of the power transistor die is not grounded, and the radio frequency signals of other components can be fed in through the source of the power transistor die without loss. The power transistor can then be connected in series with other amplifying components to realize a series power amplifier.

[0045] In this application, the area of ​​the barrier substrate can be slightly larger than the area of ​​the lower surface of the first power transistor, or the area of ​​the barrier substrate can be much larger than the area of ​​the lower surface of the first power transistor; no specific limitation is made here.

[0046] Optionally, the lower surface of the barrier substrate may also be plated with metal so that the lower surface of the barrier substrate can be embedded or surface-mounted to the PCB. The barrier substrate can be made of a high thermal conductivity material, which helps to improve the heat dissipation capability of the power transistor die. For example, the barrier substrate can be a diamond substrate with metal plated on both the first and second sides and insulated on the sides.

[0047] In this application, an RF signal can be input to the first power transistor through its gate and source. After processing the RF signal, the first power transistor outputs the processed RF signal through its drain. The barrier substrate can convert a common source-grounded power transistor die into a power transistor die where the source, gate, and drain are not grounded. This type of power transistor die, where the source, gate, and drain are not grounded, can be used in series power amplifier designs.

[0048] If the barrier substrate is to be surface-mounted on the PCB, it can be surface-mounted on the PCB by soldering or other methods; no specific restrictions are made here.

[0049] Figure 2 A schematic diagram of the power amplifier module provided in this application.

[0050] Please see Figure 2 In this application, with Figure 1 Similarly, the power amplifier module 20 provided in this application includes a first power transistor 201 and a barrier substrate 202. Optionally, the power amplifier module also includes a second power transistor 203.

[0051] The second power transistor 203 can be surface-mounted or embedded in the PCB;

[0052] The source of the second power transistor 203 is grounded, the gate of the second power transistor 203 is used to receive radio frequency signals, and the drain of the second power transistor 203 is electrically connected to the source of the first power transistor 201 through the metal layer.

[0053] In this application, Figure 2 In the power amplifier module provided by the illustrated embodiment, the first power transistor is a common-gate amplifier, and the second power transistor is a common-source amplifier. The first and second power transistors are combined to form a series power amplifier stack structure. The first power transistor is assembled on an isolation substrate, and the source of the first power transistor is connected to the drain of the second power transistor through the upper surface of the isolation substrate and a bond line. The drain of the first power transistor is the output terminal of the stacked power amplifier. After the radio frequency signal is input through the gate of the common-source amplifier, it is processed by the common-source amplifier, and then guided to the common-gate amplifier for further processing through the drain of the common-source amplifier. Finally, the processed signal is output from the drain of the common-gate amplifier, thus achieving multiple amplifications.

[0054] In this application, when the power amplifier module is working, the drain of the first power transistor is connected to a voltage of 2*Vdd, the gate of the first power transistor is connected to a voltage of Vdd+Vgs, and the gate of the second power transistor is connected to a voltage of Vgs.

[0055] In this application, Figure 2 In the illustrated embodiment, optionally, multiple first power transistors can be connected in series between the first power transistor and the second power transistor. The assembly method of the first power transistors connected in series is similar to the assembly method of the first power transistors described in the above embodiment, and is not limited here.

[0056] Figure 3 A schematic diagram of the power amplifier module provided in this application.

[0057] Please see Figure 3 In this application, with Figure 2 Similarly, the power amplifier module 30 provided in this application includes a first power transistor 301, a barrier substrate 302, and a second power transistor 303. Optionally, the power amplifier module 30 also includes a first capacitor 304 and a second capacitor 305.

[0058] The first terminal of the first capacitor 304 is electrically connected to the gate of the first power transistor 301, and the second terminal of the first capacitor 304 is grounded.

[0059] The first end of the second capacitor 305 is electrically connected to the gate of the first power transistor 301, and the second end of the second capacitor 305 is electrically connected to the source of the first power transistor 301.

[0060] In this application, the stacked common-gate amplifier requires a small external gate capacitor Cg (i.e., the first capacitor) to ensure that the voltage swing on the gate of the common-gate power amplifier dynamically follows the voltage swing of the drain, preventing drain-gate voltage breakdown. In other words, while ensuring no breakdown, the voltage swing of the power amplifier is maximized to improve its performance. The transmission line between the gate and source is an inductive transmission line (i.e., a transmission line connected in series with the second capacitor), which can effectively reduce (or neutralize) Cgs, thus improving the power amplifier's performance.

[0061] In this embodiment, the operating conditions and operating principles of the first power transistor and the second power transistor are the same as described above. Figure 2 The embodiments shown are similar, and specific details are not limited here.

[0062] In this embodiment, the assembly method and material of the isolation substrate are the same as described above. Figure 1 The embodiments shown are similar, and will not be described in detail here.

[0063] Figure 4 A schematic diagram of the power amplifier module provided in this application.

[0064] Please see Figure 4 This application provides a power amplifier module 40, please refer to [link / reference]. Figure 4 The power amplifier module 40 provided in this application includes a first power transistor 401, a barrier substrate 402, a second power transistor 403, a first capacitor 404 and a second capacitor 405. Optionally, the power amplifier module 40 may also include a third capacitor 406 and a fourth capacitor 407.

[0065] The first terminal of the third capacitor 406 is electrically connected to the gate of the second power transistor and the first terminal of the fourth capacitor 407, and the second terminal of the third capacitor 406 is grounded.

[0066] The first terminal of the fourth capacitor 407 is electrically connected to the signal input element.

[0067] In this application, the third capacitor and the fourth capacitor are both input internal matching capacitors; they are mainly used for input harmonic tuning of the amplifier, adjusting the impedance of higher harmonics, changing the output waveform of the power amplifier, and increasing the voltage of the fundamental component while the voltage swing does not exceed the limit, thereby increasing the output power and efficiency of the power amplifier.

[0068] In this embodiment, the operating conditions and operating principles of the first power transistor and the second power transistor are the same as described above. Figure 2The embodiments shown are similar, and specific details are not limited here.

[0069] In this embodiment, the assembly method and material of the isolation substrate are the same as described above. Figure 1 The embodiments shown are similar, and will not be described in detail here.

[0070] Figure 5 A schematic diagram of the power amplifier module provided in this application.

[0071] Please see Figure 5 In another possible implementation of this application, a power amplifier module 50 is provided; please refer to [link to relevant documentation]. Figure 5 The power amplifier module 50 provided in this application includes a first power transistor 501, a barrier substrate 502, and a second power transistor 503. Optionally, the power amplifier module 50 also includes a fifth capacitor 504.

[0072] The first terminal of the fifth capacitor 504 is electrically connected to the drain of the second power transistor, and the second terminal of the fifth capacitor 504 is electrically connected to the source of the first power transistor.

[0073] In this application, the assembly method of the first power transistor and the barrier substrate is the same as described above. Figure 1 The embodiments shown are similar, and specific details will not be repeated here. The second power transistor and the barrier substrate are directly assembled on the PCB substrate, and the material of the barrier substrate is the same as described above. Figure 1 The embodiments shown are similar, and will not be described in detail here.

[0074] Figure 6 A schematic diagram of the power amplifier module provided in this application.

[0075] Please see Figure 6 This application provides a power amplifier module 60, please refer to [link / reference]. Figure 6 The power amplifier module 60 provided in this application includes a first power transistor 601, a barrier substrate 602, a second power transistor 603, a first inductor, and a fifth capacitor 604. Optionally, the power amplifier module 60 further includes a sixth capacitor 605, a seventh capacitor 606, an eighth capacitor 608, a ninth capacitor 609, and a tenth capacitor 610.

[0076] The first end of the sixth capacitor 605 is used for radio frequency signal feeding, and the second end of the sixth capacitor 606 is electrically connected to the source of the first power transistor 601 and the second end of the fifth capacitor 604.

[0077] The first terminal of the seventh capacitor 606 is electrically connected to the gate of the first power transistor 601 and the first terminal of the eighth capacitor 608.

[0078] The first terminal of the eighth capacitor 608 is electrically connected to the signal input element;

[0079] The first terminal of the ninth capacitor 609 is electrically connected to the gate of the second power transistor 603 and the first terminal of the tenth capacitor 610.

[0080] The first terminal of the tenth capacitor 610 is electrically connected to the signal input element.

[0081] In one possible implementation, for example, the first power transistor is the average transistor of a series-connected DHT, and the second power transistor is the peak transistor of a series-connected DHT. In this application, when the power amplifier module is operating, bonding wires are led out from the isolation substrate 2 to serve as the source bias voltage of the first power transistor, and bonding wires are led out from the drain of the first power transistor to serve as the output of the series-connected DHT and the drain bias voltage of the first power transistor. In this application, the gate of the first power transistor is the Main RF input point and gate bias feed point of the DHT power amplifier, and the gate of the second power transistor is the Peak RF input terminal and gate bias feed point of the DHT power amplifier. Optionally, the gates of the first and second power transistors can be connected to internal matching capacitors (seventh capacitor, eighth capacitor, ninth capacitor, and tenth capacitor) to further improve the performance of the DHT power amplifier. The purpose of harmonic tuning is to change the output waveform of the power amplifier by adjusting the impedance of higher harmonics, thereby increasing the voltage of the fundamental component and improving the output power and efficiency of the power amplifier while ensuring that the voltage swing does not exceed the limit. For a specific power amplifier, by designing an internal matching capacitor, its high-order harmonic impedance can be fixed at the optimal harmonic impedance position, thereby improving the output power and efficiency of the power amplifier.

[0082] In this application, the fifth and sixth capacitors are DC blocking capacitors. A bonding wire with an electrical length of one-quarter wavelength is connected between the fifth capacitor and the drain of the second power transistor. Optionally, a bonding wire can also be led out from the fifth capacitor to provide a drain bias voltage for the second power transistor.

[0083] In this application, when the power amplifier module is working, the drains of the first power transistor and the second power transistor are connected to the Vdd voltage, the gate of the first power transistor is connected to the Vgs_main voltage, the gate of the second power transistor is connected to the Vgs_PeaK voltage, and the bias voltage of the first power transistor is set to 0 volts.

[0084] In this application embodiment, optionally, the capacitors mentioned in all the above embodiments can be general-purpose single-layer capacitors. The lower surface of the general-purpose single-layer capacitor is electrically connected to the substrate to which it is bonded by default, and the upper plate of the general-purpose single-layer capacitor can be used to make bonding wires.

[0085] In this application, the power amplifier module includes a first power transistor and a barrier substrate. A metal layer is plated on the first side of the barrier substrate, and the material between the first and second sides of the barrier substrate is an insulating material. The source of the first power transistor is electrically connected to the metal layer, and the drain of the first power transistor is used to output radio frequency (RF) signals. A printed circuit board (PCB) is surface-mounted or embedded on the second side of the barrier substrate. Thus, due to the isolation provided by the barrier substrate, the source of the first power transistor is not grounded, and RF signals can be fed into the source of the first power transistor. The power amplifier integrating the first power transistor can employ a high-efficiency architecture, improving the power amplifier's amplification efficiency.

[0086] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, devices, and units described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0087] In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection between apparatuses or units through some interfaces, and may be electrical, mechanical, or other forms.

[0088] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0089] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0090] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

Claims

1. A power amplification module, characterized by, include: A first power transistor and a barrier substrate, wherein a first metal layer is plated on a first side of the barrier substrate, and the material between the first side and the second side of the barrier substrate is an insulating material. The source of the first power transistor is electrically connected to the metal layer; The first power transistor is not grounded and is fed with an RF signal; The second side of the barrier substrate is surface-mounted or embedded with a printed circuit board (PCB).

2. The power amplifier module according to claim 1, characterized in that, The power amplifier module also includes a second power transistor; The second power transistor can be surface-mounted or embedded in the PCB; The source of the second power transistor is grounded, the gate of the second power transistor is used to receive radio frequency signals, and the drain of the second power transistor is electrically connected to the source of the first power transistor through the metal layer.

3. The power amplifier module according to claim 2, characterized in that, The power amplifier module also includes a first capacitor; The first terminal of the first capacitor is electrically connected to the gate of the first power transistor, and the second terminal of the first capacitor is grounded.

4. The power amplifier module according to claim 3, characterized in that, The power amplifier module also includes a second capacitor; The first terminal of the second capacitor is electrically connected to the gate of the first power transistor, and the second terminal of the second capacitor is electrically connected to the source of the first power transistor.

5. The power amplifier module according to any one of claims 2 to 4, characterized in that, The power amplifier module also includes a third capacitor and a fourth capacitor; The first terminal of the third capacitor is electrically connected to the gate of the second power transistor and the first terminal of the fourth capacitor, and the second terminal of the third capacitor is grounded. The first terminal of the fourth capacitor is electrically connected to the signal input element.

6. The power amplifier module according to claim 2, characterized in that, The power amplifier module also includes a fifth capacitor; The first terminal of the fifth capacitor is electrically connected to the drain of the second power transistor, and the second terminal of the fifth capacitor is electrically connected to the source of the first power transistor.

7. The power amplifier module according to claim 6, characterized in that, The power amplifier module also includes a sixth capacitor, a seventh capacitor, an eighth capacitor, a ninth capacitor, and a tenth capacitor. The first terminal of the sixth capacitor is used for radio frequency signal feeding, and the second terminal of the sixth capacitor is electrically connected to the source of the first power transistor and the second terminal of the fifth capacitor. The first terminal of the seventh capacitor is electrically connected to the gate of the first power transistor and the first terminal of the eighth capacitor. The first terminal of the eighth capacitor is electrically connected to the signal input element; The first terminal of the ninth capacitor is electrically connected to the gate of the second power transistor and the first terminal of the tenth capacitor. The first terminal of the tenth capacitor is electrically connected to the signal input element.

8. The power amplifier module according to claim 7, characterized in that, The fifth capacitor and the sixth capacitor are surface-mounted on an isolation substrate, or the fifth capacitor and the sixth capacitor are surface-mounted or embedded in the PCB.

9. The power amplifier module according to any one of claims 2 to 4, characterized in that, The first power transistor is a common-source power transistor, and the second power transistor is a common-gate power transistor.

10. The power amplifier module according to any one of claims 6 to 8, characterized in that, The first power transistor is the main transistor in the series Doherty power amplifier structure, and the second power transistor is the peak transistor in the series Doherty power amplifier structure.

11. The power amplifier module according to claim 8, characterized in that, The isolation substrate is a diamond substrate with metal plated on the first and second sides and insulated on the sides.

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