A microstructure measurement method and device, electronic equipment and storage medium
By setting an acoustic load layer on the surface of the microstructure and using a resonant structure array for testing, the accuracy problem of microstructure thickness measurement in the prior art has been solved, and efficient and reliable thickness measurement and imaging have been achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
- Filing Date
- 2022-12-12
- Publication Date
- 2026-06-09
AI Technical Summary
Existing microstructure surface imaging methods are complex and have low accuracy in thickness measurement, making it difficult to effectively obtain thickness information of protrusions on microstructure surfaces.
An acoustic load layer is set on the surface of the sample to be tested. The thickness data of the acoustic load layer on the sample surface is measured using a resonant structure array. The thickness of the surface protrusion is determined by the difference between the target thickness data and the non-target thickness data.
This method enables reliable measurement of the thickness of protrusions on the surface of microstructures. It is simple, low-cost, not easily affected by external interference, and does not damage the sample surface.
Smart Images
Figure CN116007484B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of microstructure imaging technology, and in particular to a microstructure measurement method, device, electronic device, and storage medium. Background Technology
[0002] As scientific research gradually shifts from the macroscopic to the microscopic level, the demand for fine functional structures is increasing. Imaging fine structures is a simple and intuitive method to understand their surface conditions. Imaging microstructures in three-dimensional space not only captures the location of surface protrusions but also reveals their thickness, providing more comprehensive information about the microstructure surface.
[0003] Existing microstructure surface imaging methods, such as surface plasmon resonance or transmission electron microscopy-based surface imaging, have complex physical principles and imaging techniques, and are affected by many factors, resulting in low accuracy in measuring the thickness of microstructure surface protrusions. Summary of the Invention
[0004] This application provides a microstructure measurement method, device, electronic device, and storage medium. The period of the admittance curve is adjusted by setting an acoustic load layer on the surface of the sample to be tested, and the thickness of the protrusion on the surface of the sample to be tested is determined based on the period and the phase velocity of the acoustic load layer.
[0005] On one hand, embodiments of this application provide a microstructure measurement method, the method comprising:
[0006] An acoustic loading layer is placed on the surface of the sample to be tested. The acoustic loading layer is a colloidal substance.
[0007] The test was conducted on the sample under test based on the resonant structure array, and multiple thickness data of the acoustic load layer on the surface of the sample under test were obtained.
[0008] The target thickness of the acoustic load layer is determined from multiple thickness data; the target thickness is the maximum value among the multiple thickness data.
[0009] The thickness data of the surface protrusions of the sample to be tested is determined based on the target thickness data and the non-target thickness data; the non-target thickness data is the thickness data excluding the target thickness data from multiple thickness data.
[0010] In some possible embodiments, the sample to be tested is tested based on a resonant structure array to obtain multiple thickness data of the acoustic load layer on the surface of the sample, including:
[0011] A resonant structure array is covered on an acoustic load layer on the surface of the sample to be tested; the resonant structure array includes multiple upper electrodes, a lower electrode, a piezoelectric thin film, and a resonant cavity / supporting substrate; the first layer of the resonant structure array is multiple upper electrodes and a lower electrode, the second layer is a piezoelectric thin film, and the layer below the piezoelectric thin film is a resonant cavity / supporting substrate;
[0012] Each of the multiple upper electrodes is tested with the lower electrode to obtain multiple admittance curves that correspond one-to-one with the multiple upper electrodes.
[0013] Based on multiple admittance curves, multiple thickness data of the acoustic load layer are determined; each of the multiple thickness data corresponds to a multiple upper electrode.
[0014] In some possible embodiments, multiple thickness data of the acoustic load layer are determined based on multiple admittance curves, including:
[0015] Obtain multiple wave packet periods that correspond one-to-one with multiple admittance curves;
[0016] Obtain the phase velocity of the acoustic load layer;
[0017] Based on multiple wave packet periods and phase velocities, multiple thickness data of the acoustic load layer corresponding to multiple upper electrodes are determined.
[0018] In some possible embodiments, the thickness data of the surface protrusions of the sample to be tested is determined based on target thickness data and non-target thickness data, including:
[0019] The difference between the target thickness data and the non-target thickness data is obtained; the difference data is the thickness data that characterizes the surface protrusions of the sample to be tested.
[0020] On the other hand, embodiments of this application provide a microstructure measurement device, which includes:
[0021] An acoustic loading layer setting device is used to set an acoustic loading layer on the surface of a sample to be tested. The acoustic loading layer is a colloidal substance.
[0022] A thickness data determination device is used to test a sample to be tested based on a resonant structure array, and to obtain multiple thickness data of the acoustic load layer on the surface of the sample to be tested.
[0023] A target thickness data determination device is used to determine the target thickness data of the acoustic load layer from multiple thickness data; the target thickness data is the maximum value among the multiple thickness data.
[0024] The protrusion data determination device is used to determine the thickness data of the surface protrusions of the sample to be tested based on target thickness data and non-target thickness data; the non-target thickness data is the thickness data excluding the target thickness data from multiple thickness data.
[0025] In some possible embodiments, the thickness data determining device is used for:
[0026] A resonant structure array is covered on an acoustic load layer on the surface of the sample to be tested; the resonant structure array includes multiple upper electrodes, a lower electrode, a piezoelectric thin film, and a resonant cavity / supporting substrate; the first layer of the resonant structure array is multiple upper electrodes and a lower electrode, the second layer is a piezoelectric thin film, and the layer below the piezoelectric thin film is a resonant cavity / supporting substrate;
[0027] Each of the multiple upper electrodes is tested with the lower electrode to obtain multiple admittance curves that correspond one-to-one with the multiple upper electrodes.
[0028] Based on multiple admittance curves, multiple thickness data of the acoustic load layer are determined; each of the multiple thickness data corresponds to a multiple upper electrode.
[0029] In some possible embodiments, the thickness data determining device is used for:
[0030] Obtain multiple wave packet periods that correspond one-to-one with multiple admittance curves;
[0031] Obtain the phase velocity of the acoustic load layer;
[0032] Based on multiple wave packet periods and phase velocities, multiple thickness data of the acoustic load layer corresponding to multiple upper electrodes are determined.
[0033] In some possible embodiments, the protrusion data determining device is used for:
[0034] The difference between the target thickness data and the non-target thickness data is obtained; the difference data is the thickness data that characterizes the surface protrusions of the sample to be tested.
[0035] On the other hand, embodiments of the present invention provide an electronic device, which includes a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the processor loads and executes any of the above-described microstructure measurement methods.
[0036] On the other hand, embodiments of the present invention provide a computer storage medium storing at least one instruction or at least one program, wherein the at least one instruction or at least one program is loaded and executed by a processor to implement any of the above-described microstructure measurement methods.
[0037] On the other hand, an embodiment of the present invention provides a computer program product, which includes a computer program stored in a readable storage medium. At least one processor of a computer device reads from the readable storage medium and executes the computer program, causing the computer device to perform to implement any of the above-described microstructure measurement methods.
[0038] The microstructure measurement method, apparatus, electronic device, and storage medium provided in this application have the following technical effects:
[0039] An acoustic loading layer, which is a colloidal material, is placed on the surface of the sample to be tested. The sample is then tested using a resonant array to obtain multiple thickness data points for the acoustic loading layer. A target thickness data point, the maximum value among these data points, is determined. The thickness data of the surface protrusions is then determined based on the target and non-target thickness data points, excluding the target thickness data. This embodiment of the application utilizes the periodic modulation principle of the acoustic loading layer of a high-order overtone resonator to measure the thickness information of the surface under test. This method features high reliability, no loss on the sample surface, simple instrument structure, low cost, and resistance to external interference. The test results also facilitate error estimation. Attached Figure Description
[0040] To more clearly illustrate the technical solutions and advantages in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0041] Figure 1 This is a schematic diagram of an application environment provided in an embodiment of this application;
[0042] Figure 2 This is a schematic diagram of a microstructure measurement method provided in an embodiment of this application;
[0043] Figure 3 This is a schematic diagram of a resonant structure array provided in an embodiment of this application;
[0044] Figure 4 This is a schematic diagram of an admittance curve without an acoustic load layer provided in an embodiment of this application;
[0045] Figure 5 This is a schematic diagram of the admittance curve of an acoustic load layer provided in an embodiment of this application;
[0046] Figure 6 This is a schematic diagram of a thickness test provided in an embodiment of this application;
[0047] Figure 7 This is a schematic diagram of a microstructure measuring device provided in an embodiment of this application;
[0048] Figure 8 This is a hardware structure block diagram of a server for a microstructure measurement method provided in an embodiment of this application. Detailed Implementation
[0049] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.
[0050] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or server that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or devices.
[0051] Please see Figure 1 , Figure 1 This is a schematic diagram of an application environment provided in an embodiment of this application. The schematic diagram includes a processor 101 and a display terminal 102.
[0052] Specifically, processor 101 can be a standalone physical server, a server cluster or distributed system composed of multiple physical servers, or a cloud server providing basic cloud computing services such as cloud services, cloud databases, cloud computing, cloud functions, cloud storage, network services, cloud audio recognition model training, middleware services, domain name services, security services, CDN (Content Delivery Network), and big data and artificial intelligence platforms. The operating system running on the server can include, but is not limited to, Android, iOS, Linux, Windows, Unix, etc. Display terminal 102 can refer to a device including a display.
[0053] The following describes a specific embodiment of a microstructure measurement method according to this application. Please refer to [link / reference]. Figure 2 , Figure 2 This is a schematic diagram of a microstructure measurement method provided in an embodiment of this application. This specification provides method operation steps as shown in the embodiments or flowcharts, but based on conventional or non-inventive labor, more or fewer operation steps may be included. The order of steps listed in the embodiments is merely one possible execution order among many and does not represent the only execution order. In actual system or server products, the method can be executed sequentially according to the embodiments or drawings, or in parallel (e.g., in a parallel processor or multi-threaded processing environment). Specifically, as shown... Figure 2 As shown, the method may include:
[0054] S201: An acoustic loading layer is set on the surface of the sample to be tested. The acoustic loading layer is a colloidal substance.
[0055] In this embodiment, an acoustic loading layer can be manually applied to the surface of the sample to be tested, ensuring that all protrusions on the sample surface are covered while maintaining a smooth and uniform upper surface. Alternatively, the acoustic loading layer can be placed within the instrument measuring the sample. The acoustic loading layer can be applied to the sample surface by setting the instrument parameters. The acoustic loading layer can be polydimethylsiloxane (PDMS), polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene, polytetrafluoroethylene (PTFE), polyvinyl chloride (PVC), polyethylene naphthalate twoformic acid glycol ester (PEN), photoresist, ultrasonic coupling agent, etc.
[0056] S203: Based on the resonant structure array, test the sample to be tested to obtain multiple thickness data of the acoustic load layer on the surface of the sample to be tested.
[0057] In one alternative embodiment, Figure 3 This is a schematic diagram of a resonant structure array provided in an embodiment of this application, as shown below. Figure 3As shown, the resonant structure array may include multiple upper electrodes 301, a lower electrode 302, a piezoelectric thin film 303, and a resonant cavity / support substrate 304. The first layer of the resonant structure array consists of multiple upper electrodes 301 and a lower electrode 302, the second layer is a piezoelectric thin film 303, and the next layer after the piezoelectric thin film 303 is the resonant cavity / support substrate 304.
[0058] Specifically, the resonant structure array can be an improvement on a high-mode thin film bulk acoustic resonator (HBAR). The upper electrode 301 and lower electrode 302 can be made of metals such as aluminum, copper, and gold. The piezoelectric thin film 303 can be made of crystalline materials with piezoelectric effects, such as lithium niobate, lithium tantalate, aluminum nitride, and quartz. The resonant cavity / support substrate 304 can be made of materials such as silicon carbide, silicon, silicon (including a silicon oxide layer), and sapphire. During the detection process, the upper electrode 301 and lower electrode 302 can be connected to a vector network analyzer. When the resonant structure array is working, the piezoelectric thin film 303 converts the electrical signal input from the upper electrode 301 into an acoustic signal (bulk acoustic wave) through the piezoelectric effect and propagates within the resonant cavity / support substrate 304. Bulk acoustic waves of a specific frequency are reflected within the resonant cavity / support substrate 304 and resonate.
[0059] In one alternative embodiment, Figure 4 This is a schematic diagram of an admittance curve without an acoustic load layer provided in an embodiment of this application, as shown below. Figure 4 As shown, the performance characteristics of a high-mode thin-film bulk acoustic resonator (HBAR) can be characterized by its admittance curve. Each peak of the admittance curve corresponds to a high-mode bulk acoustic resonance, and the spacing between adjacent peaks can be approximated by the thickness of the resonant cavity thin film. Decide:
[0060]
[0061] in, Represents the distance between adjacent peaks. This represents the phase velocity of the bulk acoustic waves within the resonant cavity. The phase velocity is determined by the material of the resonant cavity itself. The thickness of the thin film in the resonant cavity. Without an acoustic load layer, bulk acoustic waves of different orders resonate within the cavity, and their admittance is expressed as a series of resonant peaks with essentially uniform intensity, the spacing between which is... The cavity length (support substrate thickness) of the resonant cavity satisfies formula (1).
[0062] In this embodiment, the measurement principle of the present invention is based on the resonant modulation of the acoustic load layer thickness on the sound waves of higher-order overtone bodies, combined with... Figure 3 Continuing the explanation, firstly, the resonant structure array can be placed over the acoustic load layer on the surface of the sample to be tested, so that the lower surface of the resonant cavity / support substrate is in close contact with the acoustic load layer. Secondly, admittance tests are performed on each of the multiple upper electrodes and the lower electrode respectively, resulting in multiple admittance curves corresponding one-to-one with the multiple upper electrodes. Based on the multiple admittance curves, multiple thickness data of the acoustic load layer are determined, and these multiple thickness data correspond one-to-one with the multiple upper electrodes.
[0063] Specifically, Figure 5 This is a schematic diagram of the admittance curve of an acoustic load layer provided in an embodiment of this application, as shown below. Figure 5 As shown, when there is a thickness of [missing information] below the resonant cavity When the acoustic loading layer is in place, its bulk acoustic resonance will be periodically modulated, and the resonator admittance curve will be as follows: Figure 5 As shown, the intensity (admittance amplitude) of each resonance peak varies periodically, forming an admittance curve with a wave packet shape. The period of the wave packet... Determined by the thickness and phase velocity of the acoustic load layer:
[0064]
[0065] in, The period representing the wave packet, This represents the phase velocity of the bulk acoustic waves within the acoustic loading layer. The phase velocity is determined by the material of the acoustic loading layer itself. The thickness of the acoustic loading layer is determined by measuring the wave packet period of the admittance curve. The thickness of the acoustic load layer is deduced by formula (2). In some possible embodiments, each of the multiple upper electrodes is subjected to admittance testing with the lower electrode to obtain multiple admittance curves corresponding to the multiple upper electrodes, multiple wave packet periods corresponding to the multiple admittance curves are obtained, and the phase velocity of the acoustic load layer is obtained. Based on the multiple wave packet periods and phase velocities, multiple thickness data of the acoustic load layer corresponding to the multiple upper electrodes are determined according to formula (2).
[0066] By utilizing the principle of resonant modulation of high-order overtone acoustic waves based on the thickness of the acoustic load layer, an acoustic load layer is placed on the surface of the sample to be tested. The sample is then tested using a resonant structure array to obtain an admittance curve. The admittance curve is then used to derive multiple thickness data of the acoustic load layer, which correspond one-to-one with multiple upper electrodes. These thickness data can be used to prepare for the next step of testing the sample. The device used in the test can be manufactured using existing mature semiconductor processes, is not easily affected by external interference, and the formulas and principles used are relatively simple.
[0067] S205: Determine the target thickness data of the acoustic load layer from multiple thickness data, where the target thickness data is the maximum value among the multiple thickness data.
[0068] In one alternative embodiment, Figure 6 This is a schematic diagram of a thickness test provided in an embodiment of this application, such as... Figure 6 As shown, according to formula (2), multiple thickness data of the acoustic load layer corresponding to multiple upper electrodes are determined, and the one with the largest value is selected as the target thickness data. The thickness data with the largest value is the place where the acoustic load layer is the thickest, that is, the place where the protrusion thickness on the surface of the sample to be tested is the smallest.
[0069] S207: Determine the thickness data of the surface protrusions of the sample to be tested based on the target thickness data and the non-target thickness data. The non-target thickness data is the thickness data excluding the target thickness data from multiple thickness data.
[0070] In some possible embodiments, the target thickness data, which has the largest thickness value of the acoustic load layer, is excluded. The remaining data are considered non-target thickness data. The difference between the target thickness data and the non-target thickness data is taken, and this difference data represents the thickness of the surface protrusion of the sample under test. For example, if the obtained acoustic load layer thickness data are 3mm, 6mm, and 10mm, then the target thickness data is 10mm, and the non-target data are 3mm and 6mm. The difference between the target thickness data and the non-target thickness data is taken, resulting in difference data of 7mm and 4mm. These 7mm and 4mm represent the thickness of the surface protrusion of the sample under test.
[0071] In summary, the microstructure measurement method proposed in this application adds an acoustic load layer, which periodically modulates the bulk acoustic wave resonance. The thickness of the acoustic load layer is then determined based on a simple testing principle and calculation formula. From the obtained thickness data of the acoustic load layer, the thickness data of the surface protrusions of the sample to be tested is derived. Because the entire testing principle and calculation formula are simple, the results obtained are highly reliable. Furthermore, the colloid used as the acoustic load layer is easy to remove and does not damage the surface of the sample to be tested.
[0072] This application also provides a microstructure measurement device. Figure 7 This is a schematic diagram of a microstructure measuring device provided in an embodiment of this application, as shown below. Figure 7 As shown, the device includes an acoustic load layer setting device 701, a thickness data determination device 702, a target thickness data determination device 703, and a protrusion data determination device 704.
[0073] The acoustic load layer setting device 701 is used to set an acoustic load layer on the surface of the sample to be tested. The acoustic load layer is a colloidal substance.
[0074] Thickness data determination device 702 is used to test the sample to be tested based on the resonant structure array and obtain multiple thickness data of the acoustic load layer on the surface of the sample to be tested.
[0075] The target thickness data determining device 703 is used to determine the target thickness data of the acoustic load layer from multiple thickness data, wherein the target thickness data is the maximum value among the multiple thickness data.
[0076] The protrusion data determination device 704 is used to determine the thickness data of the surface protrusions of the sample to be tested based on the target thickness data and the non-target thickness data, wherein the non-target thickness data is the thickness data excluding the target thickness data from multiple thickness data.
[0077] In some possible embodiments, the thickness data determining device is used for:
[0078] A resonant structure array is covered on an acoustic load layer on the surface of the sample to be tested. The resonant structure array includes multiple upper electrodes, a lower electrode, a piezoelectric thin film, and a resonant cavity / supporting substrate. The first layer of the resonant structure array consists of multiple upper electrodes and a lower electrode, the second layer is a piezoelectric thin film, and the layer below the piezoelectric thin film is a resonant cavity / supporting substrate.
[0079] Each of the multiple upper electrodes is subjected to admittance testing with a lower electrode to obtain multiple admittance curves that correspond one-to-one with the multiple upper electrodes.
[0080] Based on multiple admittance curves, multiple thickness data of the acoustic load layer are determined, and each of the multiple thickness data corresponds to a multiple upper electrode.
[0081] In some possible embodiments, the thickness data determining device is used for:
[0082] Obtain multiple wave packet periods that correspond one-to-one with multiple admittance curves.
[0083] Obtain the phase velocity of the acoustic load layer.
[0084] Based on multiple wave packet periods and phase velocities, multiple thickness data of the acoustic load layer corresponding to multiple upper electrodes are determined.
[0085] In some possible embodiments, the protrusion data determining device is used for:
[0086] The difference between the target thickness data and the non-target thickness data is used to obtain the difference data, which is the thickness data that characterizes the surface protrusion of the sample to be tested.
[0087] The apparatus and method embodiments in this application are based on the same application concept.
[0088] The methods and embodiments provided in this application can be executed on a computer terminal, server, or similar computing device. Taking running on a server as an example, Figure 8 This is a hardware structure block diagram of a server for a microstructure measurement method provided in an embodiment of this application. For example... Figure 8 As shown, the server 800 can vary significantly due to different configurations or performance. It may include one or more central processing units (CPUs) 810 (CPUs 810 may include, but are not limited to, microprocessors such as MCUs or programmable logic devices such as FPGAs), a memory 830 for storing data, and one or more storage media 820 (e.g., one or more mass storage devices) for storing application programs 823 or data 822. The memory 830 and storage media 820 may be temporary or persistent storage. The program stored in the storage media 820 may include one or more modules, each module may include a series of instruction operations on the server. Furthermore, the CPU 810 may be configured to communicate with the storage media 820 and execute the series of instruction operations stored in the storage media 820 on the server 800. Server 800 may also include one or more power supplies 860, one or more wired or wireless network interfaces 850, one or more input / output interfaces 840, and / or one or more operating systems 821, such as Windows Server™, Mac OS X™, Unix™, Linux™, FreeBSD™, etc.
[0089] The input / output interface 840 can be used to receive or send data via a network. Specific examples of the network described above may include a wireless network provided by the communication provider of server 800. In one example, the input / output interface 840 includes a network interface controller (NIC), which can connect to other network devices via a base station to communicate with the Internet. In another example, the input / output interface 840 may be a radio frequency (RF) module used for wireless communication with the Internet.
[0090] Those skilled in the art will understand that Figure 8 The structure shown is for illustrative purposes only and does not limit the structure of the aforementioned electronic device. For example, server 800 may also include... Figure 8 The more or fewer components shown, or having the same Figure 8 The different configurations shown.
[0091] Embodiments of this application also provide a computer storage medium, which can be disposed in a server to store at least one instruction, at least one program, code set, or instruction set related to implementing a microstructure measurement method in the method embodiment. The at least one instruction, the at least one program, the code set, or the instruction set is loaded and executed by the processor to implement the microstructure measurement method described above.
[0092] Optionally, in this embodiment, the storage medium may be located at at least one of the multiple network servers in a computer network. Optionally, in this embodiment, the storage medium may include, but is not limited to, various media capable of storing program code, such as USB flash drives, read-only memory (ROM), random access memory (RAM), portable hard drives, magnetic disks, or optical disks.
[0093] On the other hand, embodiments of the present invention provide an electronic device, which includes a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the processor loads and executes any of the above-described microstructure measurement methods.
[0094] On the other hand, an embodiment of the present invention provides a computer program product, which includes a computer program stored in a readable storage medium. At least one processor of a computer device reads from the readable storage medium and executes the computer program, causing the computer device to perform to implement any of the above-described microstructure measurement methods.
[0095] As can be seen from the embodiments of the microstructure measurement method, apparatus, electronic device, and storage medium provided in this application, this application, by setting an acoustic load layer on the surface of the sample to be tested (the acoustic load layer is a colloidal substance), and testing the sample based on a resonant structure array, obtains multiple thickness data of the acoustic load layer on the surface of the sample to be tested. From these multiple thickness data, a target thickness data of the acoustic load layer is determined, which is the maximum value among the multiple thickness data. Based on the target thickness data and non-target thickness data, the thickness data of the surface protrusions of the sample to be tested is determined, where the non-target thickness data is the thickness data excluding the target thickness data from the multiple thickness data. This application's embodiments are based on the periodic modulation principle of the acoustic load of a high-order overtone acoustic resonator to measure the thickness information of the surface to be tested. This method has the characteristics of high reliability, no loss on the surface of the sample to be tested, and the instrument structure used is simple, low-cost, and not easily affected by external interference. The test results are easy to estimate errors, and this method can be used to image the microstructure of 3D surfaces, possessing the application potential for wafer-level sample surface three-dimensional imaging.
[0096] It should be noted that the order of the embodiments described above is merely for descriptive purposes and does not represent the superiority or inferiority of the embodiments. Furthermore, specific embodiments have been described above. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps described in the claims can be performed in a different order than that shown in the embodiments and still achieve the desired result. Additionally, the processes depicted in the drawings do not necessarily require a specific or sequential order to achieve the desired result. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.
[0097] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the device embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.
[0098] Those skilled in the art will understand that all or part of the steps of the above embodiments can be implemented by hardware, or by a program instructing related hardware. The program can be stored in a computer-readable storage medium, such as a read-only memory, a disk, or an optical disk.
[0099] The above description is only a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.
Claims
1. A method for measuring microstructures, characterized in that, The method includes: An acoustic loading layer is provided on the surface of the sample to be tested, wherein the acoustic loading layer is a colloidal substance; Testing the sample under test based on a resonant structure array yields multiple thickness data points for the acoustic load layer on the sample surface. The resonant structure array includes multiple upper electrodes, a lower electrode, a piezoelectric thin film, and a resonant cavity / support substrate. The first layer of the resonant structure array consists of the multiple upper electrodes and the lower electrode, the second layer is the piezoelectric thin film, and the next layer is the resonant cavity / support substrate. The testing process involves covering the acoustic load layer on the sample surface with the resonant structure array; performing admittance tests on each of the multiple upper electrodes and the lower electrode to obtain multiple admittance curves corresponding to each upper electrode; and determining multiple thickness data points for the acoustic load layer based on the admittance curves. Each thickness data point corresponds to one of the multiple upper electrodes. The target thickness data of the acoustic load layer is determined from the plurality of thickness data; the target thickness data is the maximum value among the plurality of thickness data. The thickness data of the surface protrusions of the sample to be tested is determined based on the target thickness data and the non-target thickness data; the non-target thickness data is the thickness data excluding the target thickness data from the plurality of thickness data.
2. The microstructure measurement method according to claim 1, characterized in that, The step of determining multiple thickness data of the acoustic load layer based on the multiple admittance curves includes: Obtain multiple wave packet periods that correspond one-to-one with the multiple admittance curves; Obtain the phase velocity of the acoustic load layer; Based on the multiple wave packet periods and the phase velocity, the multiple thickness data of the acoustic load layer corresponding one-to-one with the multiple upper electrodes are determined.
3. A microstructure measurement method according to any one of claims 1-2, characterized in that, The process of determining the thickness data of the surface protrusions of the sample to be tested based on the target thickness data and the non-target thickness data includes: The difference between the target thickness data and the non-target thickness data is used to obtain the difference data; the difference data is the thickness data characterizing the surface protrusion of the sample to be tested.
4. A microstructure measuring device, characterized in that, The device includes: An acoustic loading layer setting device is used to set an acoustic loading layer on the surface of a sample to be tested, wherein the acoustic loading layer is a colloidal substance; A thickness data determination device is used to test a sample to be tested based on a resonant structure array to obtain multiple thickness data of the acoustic load layer on the surface of the sample to be tested. The resonant structure array includes multiple upper electrodes, a lower electrode, a piezoelectric thin film, and a resonant cavity / supporting substrate. The first layer of the resonant structure array is the multiple upper electrodes and the lower electrode, the second layer is the piezoelectric thin film, and the next layer after the piezoelectric thin film is the resonant cavity / supporting substrate. The thickness data determination device is used to: cover the acoustic load layer on the surface of the sample to be tested with the resonant structure array; perform admittance tests on each of the multiple upper electrodes and the lower electrode respectively to obtain multiple admittance curves corresponding one-to-one with the multiple upper electrodes; determine multiple thickness data of the acoustic load layer based on the multiple admittance curves; the multiple thickness data correspond one-to-one with the multiple upper electrodes. A target thickness data determining device is used to determine target thickness data of the acoustic load layer from a plurality of thickness data; the target thickness data is the maximum value among the plurality of thickness data. A protrusion data determination device is used to determine the thickness data of the surface protrusions of the sample to be tested based on the target thickness data and non-target thickness data; the non-target thickness data is the thickness data excluding the target thickness data from the plurality of thickness data.
5. A microstructure measuring device according to claim 4, characterized in that, The thickness data determining device is used for: Obtain multiple wave packet periods that correspond one-to-one with the multiple admittance curves; Obtain the phase velocity of the acoustic load layer; Based on the multiple wave packet periods and the phase velocity, the multiple thickness data of the acoustic load layer corresponding one-to-one with the multiple upper electrodes are determined.
6. A microstructure measuring device according to any one of claims 4-5, characterized in that, The protrusion data determining device is used for: The difference between the target thickness data and the non-target thickness data is used to obtain the difference data; the difference data is the thickness data characterizing the surface protrusion of the sample to be tested.
7. An electronic device, characterized in that, The electronic device includes a processor and a memory, the memory storing at least one instruction or at least one program, the at least one instruction or the at least one program being loaded by the processor and executed as described in any one of claims 1-3.
8. A computer storage medium, characterized in that, The computer storage medium stores at least one instruction or at least one program, which is loaded and executed by a processor to implement the method as described in any one of claims 1-3.