Inspection device and probe polishing method

Abstract

The present invention provides an inspection device and a method for polishing a probe. The inspection device is used to inspect an inspection target substrate and includes: an inspection stage; a conveying mechanism; a polishing stage on which a polishing substrate is placed, the polishing substrate being used to polish a probe that contacts the substrate during inspection and having a shape and size that can be conveyed by the conveying mechanism; a first advance / retract mechanism that moves the inspection stage forward / retract relative to the probe; and a second advance / retract mechanism that moves the polishing stage forward / retract relative to the probe, the polishing stage being provided separately from the inspection stage, the retreat area of ​​the inspection stage and the retreat area of ​​the polishing stage being located on opposite sides of the probe when viewed from above, and the second advance / retract mechanism being configured so that the side of the polishing substrate opposite to the retreat area side of the polishing substrate can overlap with the probe when viewed from above, while the retreat area side of the polishing substrate cannot overlap with the probe when viewed from above.

Description

Technical Field

[0001] The present invention relates to an inspection device and a method for polishing a probe. Background Art

[0002] Patent Document 1 discloses a prober comprising a mounting table for mounting a substrate and a probe card facing the mounting table. The probe card has a plurality of probes protruding toward the mounted substrate. The prober includes a tip grinding device for grinding the tips of the plurality of probes. The tip grinding device includes a tip contact portion for contacting the tips and a support portion for supporting the tip contact portion. The tip contact portion is provided with a tip grinding surface for grinding the tips on the portion that contacts the tips.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2015-138888 Summary of the Invention

[0006] Technical problem to be solved by the invention

[0007] The technology of the present invention can polish a probe using a polishing substrate that can be transported by a transport mechanism that transports an inspection target substrate without reducing productivity while suppressing an increase in the size of the apparatus.

[0008] Means for solving technical problems

[0009] One embodiment of the present invention provides an inspection device for inspecting an inspection object substrate, characterized in that it includes: an inspection stage for mounting the inspection object substrate; a conveying mechanism capable of at least conveying the inspection object substrate; a polishing stage for mounting a polishing substrate, the polishing substrate being a component for polishing a probe that contacts the substrate during inspection and having a shape and size that can be conveyed by the conveying mechanism; a first advance and retreat mechanism for moving the inspection stage so that the inspection stage advances and retreats relative to the probe; and a second advance and retreat mechanism, It is used to move the polishing platform so that the polishing platform advances and retreats relative to the probe. The polishing platform is provided separately from the inspection platform. The retreat area of ​​the inspection platform and the retreat area of ​​the polishing platform are located on opposite sides of the probe when viewed from above. The second advance and retreat mechanism is constructed so that the side of the polishing substrate placed on the polishing platform opposite to the retreat area side of the polishing substrate can overlap with the probe when viewed from above, while the retreat area side of the polishing substrate cannot overlap with the probe when viewed from above.

[0010] Effects of the Invention

[0011] According to the present invention, a probe can be polished using a polishing substrate that can be transported by a transport mechanism that transports an inspection target substrate without reducing productivity while suppressing an increase in the size of the apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a perspective view schematically showing the configuration of the inspection device according to this embodiment.

[0013] Figure 2 It is a longitudinal sectional view schematically showing the configuration of the inspection device according to this embodiment.

[0014] Figure 3 This is a plan view showing the storage room and the components built into the loader.

[0015] Figure 4 This is a plan view illustrating a polishing wafer.

[0016] Figure 5 This is an explanatory diagram of the moving mechanism.

[0017] Figure 6 This is a cross-sectional view showing another example of the polishing stage.

[0018] Description of Reference Numerals

[0019] 1 inspection device, 3b transport mechanism, 10 inspection mounting table, 20 moving mechanism, 40 polishing mounting table, K polishing wafer, P1 probe, T1 retreat area, T2 retreat area, W inspection target wafer. DETAILED DESCRIPTION

[0020] In the semiconductor device (hereinafter referred to as "device") manufacturing process, a large number of devices are formed simultaneously on a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"). The formed devices are inspected for electrical characteristics and other factors to separate good and defective products. Device inspection is performed using inspection equipment, for example, on the substrate before it is separated into individual devices.

[0021] In an inspection device called a detector, there is provided a stage for placing a substrate on which a semiconductor device is formed, a conveying mechanism for conveying the substrate, and a probe card having a plurality of probes. During inspection, in the inspection device, the stage and the probe card are moved relative to each other so that the electrode pads or solder bumps of the semiconductor device are aligned with the probe positions and contacted. In the state in which they are brought into contact as described above, an electrical signal is supplied to the semiconductor device from the tester via the probe. Then, based on the electrical signal received from the semiconductor device by the tester via the probe, it is determined whether the semiconductor device is defective.

[0022] When the above inspection is repeated, oxides on the surface of the electrode pad and the like adhere to the probe tip, or the probe tip is worn. Therefore, the probe tip is polished (see Patent Document 1).

[0023] However, the inspection device of Patent Document 1 does not include a mechanism for transporting the needle tip contact portion, which is provided with a needle tip polishing surface and supported by a support portion. Therefore, the inspection device has room for improvement in terms of automatic replacement of the needle tip contact portion. Furthermore, providing a separate mechanism for transporting the needle tip contact portion would allow for automatic replacement, but would increase the size of the inspection device.

[0024] Another solution is to configure the tip grinding member to have a shape and size suitable for transport by the transport mechanism used to transport the inspection target substrate. Specifically, the tip grinding member, or grinding substrate, is placed on the mounting table in place of the inspection target substrate and used to grind the probe tip. While this solution allows for automatic replacement of the tip grinding member, it requires removing the inspection target substrate from the mounting table for grinding, which reduces inspection productivity.

[0025] To avoid a decrease in the productivity of this inspection, a solution can be considered to provide a separate mounting table for the polishing substrate in addition to the mounting table for the inspection target substrate. However, this solution requires space to retract the inspection target substrate and its mounting table during polishing. Therefore, if a separate mounting table for the polishing substrate is simply provided, the space occupied by the inspection apparatus will increase by the amount of space mentioned above.

[0026] Therefore, the technology of the present invention can polish the probe using a polishing substrate that can be transported by a transport mechanism that transports an inspection target substrate without reducing productivity while suppressing an increase in the size of the apparatus.

[0027] Hereinafter, the inspection apparatus and the probe polishing method of this embodiment will be described with reference to the accompanying drawings. In addition, in this specification and the accompanying drawings, elements having substantially the same functional configuration are denoted by the same reference numerals to omit repeated description.

[0028] First, the configuration of the inspection device according to this embodiment will be described. Figure 1 and Figure 2 These are a perspective view and a longitudinal sectional view schematically showing the configuration of the inspection device 1 according to the present embodiment.

[0029] Figure 3 It is a plan view showing components built into a storage chamber and a loader, which will be described later.

[0030] Figure 4 It is a plan view for explaining a polishing wafer to be described later. Figure 5 This is an explanatory diagram of a moving mechanism described later.

[0031] Inspection apparatus 1 inspects a wafer W serving as a substrate to be inspected. Specifically, it inspects the electrical characteristics of devices (not shown) formed on wafer W. A plurality of n (n is a natural number greater than or equal to 2) devices are formed on wafer W, and inspection apparatus 1 simultaneously inspects m (m is a natural number less than n) devices in a single inspection. Wafer W is, for example, a disk with a diameter of 300 mm.

[0032] like Figure 1 and Figure 2 As shown, the inspection apparatus 1 includes a storage chamber 2 for storing inspection target wafers W during inspection; a loader 3 arranged adjacent to the storage chamber 2 ; and a detector 4 arranged to cover the upper portion of the storage chamber 2 .

[0033] like Figure 2 As shown, the storage chamber 2 is a hollow shell having an inspection stage 10 therein for mounting an inspection target wafer W. The inspection stage 10 is capable of adsorbing and holding the inspection target wafer W so that the position of the inspection target wafer W relative to the inspection stage 10 does not shift. In addition, a temperature control mechanism for adjusting the temperature of the inspection target wafer W mounted on the inspection stage 10 is provided on the inspection stage 10. The temperature control mechanism includes at least one of a heating mechanism (e.g., a resistance heater) for heating the inspection target wafer W mounted on the inspection stage 10 by heating the inspection stage 10, and a cooling mechanism (e.g., a flow path for a refrigerant for cooling) for cooling the inspection target wafer W mounted on the inspection stage 10 by cooling the inspection stage 10.

[0034] In addition, a moving mechanism 20 is provided inside the storage chamber 2. The moving mechanism 20 is capable of moving the inspection stage 10, specifically, the inspection stage 10 in the horizontal direction and the vertical direction. The moving mechanism 20 can be used to adjust the relative position of the probe card P and the inspection object wafer W described later so that the electrode on the surface of the inspection object wafer W contacts the probe P1 of the probe card P. In addition, the moving mechanism 20 can be used to move the inspection stage 10 forward and backward relative to the probe P1 described later. When the probe P1 is polished by the polishing wafer K described later, the inspection stage 10 and the inspection object wafer W placed thereon can be retreated to a retreat area T1 (see FIG. 1 ) that is spaced apart from the probe P1 when viewed from above. Figure 3 ).

[0035] The moving mechanism 20 includes, for example, an X stage 21 and a Y stage 22 in this order from the bottom.

[0036] The X stage 21 is movable along guide rails 21a extending in the X direction (device width direction) in the figure, provided on the bottom wall of the storage chamber 2. The Y stage 22 is movable along guide rails 22a extending in the Y direction (device depth direction) in the figure, provided on the X stage 21.

[0037] For example, ball screws (not shown) are provided on the X-stage 21 and the Y-stage 22. By adjusting the rotation amount of the ball screws by a motor (not shown) combined with an encoder, the X-direction position of the X-stage 21 and the Y-direction position of the Y-stage 22 can be adjusted.

[0038] Furthermore, the moving mechanism 20 includes, for example, a Z stage 23 on a Y stage 22 .

[0039] The Z stage 23 is mounted on the Y stage 22 via a telescopic shaft 23a that is extendable and retractable in the Z direction (vertical direction) in the figure, thereby enabling the Z stage 23 to be raised and lowered. The telescopic shaft 23a is provided with, for example, a motor incorporating an encoder. By adjusting the rotation of the motor, the length of the telescopic shaft 23a can be adjusted, thereby adjusting the Z-direction position of the Z stage 23.

[0040] The inspection stage 10 is supported on the Z stage 23 via a rotation mechanism 24 .

[0041] The rotation mechanism 24 is a mechanism for rotating the inspection stage 10 around a vertical axis. For example, it has a motor combined with an encoder. By adjusting the rotation amount of the above-mentioned motor, the orientation of the inspection object chip W placed on the inspection stage 10 can be adjusted.

[0042] The inspection stage 10 can be moved in the X, Y, and Z directions by the X stage 21, Y stage 22, and Z stage 23. Furthermore, the rotation mechanism 24 can adjust the orientation of the inspection target wafer W placed on the inspection stage 10 as described above.

[0043] A probe card P is placed above the inspection stage 10 in the storage chamber 2. The probe card P has probes P1 that electrically contact the electrodes of devices formed on the inspection target wafer W when conducting electrical characteristic inspections on the devices. The probes P1 are placed in a probe placement area Pa (see FIG. 1 ) in the center of the probe card P when viewed from above. Figure 3 ).

[0044] The probe card P is connected to the tester 4 via an interface 30. During electrical characteristic testing, each probe P1 contacts an electrode of a device formed on the wafer W to be tested, supplies power from the tester 4 to the device via the interface 30, and transmits signals from the device to the tester 4 via the interface 30.

[0045] like Figure 3 As shown, the loader 3 includes: a storage portion 3a capable of storing a plurality of inspection target wafers W; a transport mechanism 3b for transporting the inspection target wafers W; and a pre-alignment mechanism 3c for adjusting the orientation of the inspection target wafers W.

[0046] Specifically, the storage section 3a stores a FOUP (not shown) which is a transport container for storing a plurality of inspection target wafers W. The storage section 3a is provided on the front side (the negative side in the Y direction in the figure) for easy access by the operator.

[0047] The transport mechanism 3b can take out the inspection target wafer W from the FOUP in the storage section 3a and transport it to the storage chamber 2. In addition, the transport mechanism 3b can transport the inspection target wafer W after the device electrical characteristics inspection is completed from the storage chamber 2 and return it to the FOUP in the storage section 3a.

[0048] The pre-alignment mechanism 3c includes a rotation stage 3d for rotating the inspection target wafer W around a vertical axis, a light emitting and receiving unit (not shown) for detecting a notch in the inspection target wafer W, and the like.

[0049] The tester 4 includes a test board (not shown) that recreates a portion of the circuit structure of a motherboard on which devices are mounted. The test board is connected to a tester computer (not shown) that determines the quality of devices formed on the inspection target wafer W based on signals from the devices. By replacing the test board, the tester 4 can recreate the circuit structures of various motherboards.

[0050] In the inspection apparatus 1, when inspecting the electrical characteristics of devices formed on the inspection target wafer W, the tester computer transmits data to the inspection board connected to the devices via the probes P1. The tester computer then determines, based on the electrical signals from the inspection board, whether the transmitted data has been correctly processed by the inspection board.

[0051] In addition, if Figure 2 As shown, inside the storage chamber 2 of the inspection apparatus 1, a polishing stage 40 for mounting a polishing wafer K serving as a polishing substrate is provided separately from the inspection stage 10. The polishing stage 40 can hold the polishing wafer K by suction so that the position of the polishing wafer K relative to the polishing stage 40 does not shift.

[0052] The polishing wafer K is a component for polishing the probe P1 (specifically, its tip), and has a structure capable of being transported by the transport mechanism 3b (see Figure 3 ) transport size and shape. Specifically, the grinding wafer K, for example Figure 4 As shown, the polishing wafer K is a disk-shaped member similar to the inspection target wafer W, and its diameter is approximately 150 mm to 300 mm. Furthermore, from the perspective of the amount of space occupied by the inspection apparatus 1, the diameter of the polishing wafer K is preferably small. However, if the diameter of the polishing wafer K is less than 150 mm, the transport arm of the existing transport mechanism 3 b cannot hold the polishing wafer K. Alternatively, the polishing wafer K can be manufactured by, for example, attaching a lapping sheet to the surface of the disk-shaped member.

[0053] The polishing wafer K may have a notch K1 similarly to the inspection target wafer W. In the following description, when the polishing wafer K is divided into two parts in a plan view, the region on the notch K1 side is referred to as a first region R1, and the other region is referred to as a second region R2.

[0054] By using such a polishing wafer K, the polishing wafer K can be automatically replaced using the transport mechanism 3 b without requiring manual intervention by an operator.

[0055] The polishing stage 40 is formed in a cylindrical shape corresponding to the shape of the polishing wafer K, and its diameter is slightly larger than the diameter of the polishing wafer K in a plan view.

[0056] In addition, set Figure 2The moving mechanism 20 inside the storage chamber 2 can move not only the inspection stage 10 but also the polishing stage 40. Specifically, the moving mechanism 20 can move the polishing stage 40 together with the inspection stage 10 in the horizontal direction, and can also move the polishing stage 40 and the inspection stage 10 independently in the vertical direction. By means of the moving mechanism 20, the probe P1 of the probe card P can be brought into contact with the polishing wafer K placed on the polishing stage 40. In addition, by means of the moving mechanism 20, the polishing stage 40 can be moved forward and backward relative to the probe P1, and when inspecting the inspection object wafer W placed on the inspection stage 10, the polishing stage 40 and the polishing wafer K placed thereon can be moved to a retreat area T2 (see FIG. 2 ) that is spaced apart from the probe P1 when viewed from above. Figure 3 ).

[0057] That is, the moving mechanism 20 serves as both a first advancing / retracting mechanism for moving the inspection stage 10 relative to the probe P1 and a second advancing / retracting mechanism for moving the polishing stage 40 relative to the probe P1 .

[0058] The polishing stage 40, like the inspection stage 10, is movable in the X and Y directions via the X and Y stages 21 and 22. That is, the polishing stage 40 and the inspection stage 10 share a common moving mechanism in the X and Y directions, which are horizontal directions.

[0059] The moving mechanism 20 includes a Z stage 25 on a Y stage 22 , for example, in order to enable the polishing stage 40 to move in the Z direction.

[0060] The Z stage 25 is mounted on the Y stage 22 via a telescopic shaft 25a that is extendable and retractable in the Z direction (vertical direction) in the figure, thereby enabling the Z stage 25 to be raised and lowered. The telescopic shaft 25a is provided with, for example, a motor incorporating an encoder. By adjusting the rotation of the motor, the length of the telescopic shaft 25a can be adjusted, thereby adjusting the Z-direction position of the Z stage 25.

[0061] A polishing stage 40 is supported on the Z stage 25 via a rotation mechanism 26. The rotation mechanism 26 is a mechanism for rotating the polishing stage 40 about a vertical axis and includes, for example, a motor combined with an encoder. By adjusting the rotation amount of the motor, the orientation of the polishing wafer K placed on the polishing stage 40 can be adjusted.

[0062] In addition, in the inspection device 1, if Figure 3 As shown, the loader 3 is provided with a storage portion 3e capable of storing a plurality of polishing wafers K. The storage portion 3e is provided on the back side of the loader 3 (positive side in the Y direction in the figure).

[0063] The polishing wafer K stored in the storage portion 3 e can be taken out by the transport mechanism 3 b , carried into the storage chamber 2 , and placed on the polishing stage 40 .

[0064] In addition, when the polishing wafer K in the storage chamber 2 needs to be replaced, the polishing wafer K is sent out by the conveying mechanism 3b and returned to the storage part 3e, and the new polishing wafer K in the storage part 3e is sent into the storage chamber 2 by the conveying mechanism 3b.

[0065] The inspection apparatus 1 also includes a control unit 100. The control unit 100 is comprised of, for example, a computer including a CPU and memory, and includes a program storage unit (not shown). The program storage unit stores programs for controlling various processes in the inspection apparatus 1. Alternatively, the programs may be stored in a non-transitory computer-readable storage medium and installed from the storage medium into the control unit 100. Part or all of the programs may be implemented in dedicated hardware (circuit board).

[0066] In the inspection device 1 constructed as described above, Figure 3 As shown, the retraction area T1 of the inspection stage 10, which is implemented by the moving mechanism 20, and the retraction area T2 of the polishing wafer K, which is implemented by the moving mechanism 20, are located on opposite sides of the probe arrangement area Pa, sandwiched between them, when viewed from above. Furthermore, in the inspection apparatus 1, the back side of the polishing wafer K placed on the polishing stage 40, which is the side of the retraction area for the polishing wafer K, cannot be used for polishing by the probe P1. Only the front side, which is the opposite side (the negative side in the Y direction in the figure), can be used for polishing by the probe P1. In other words, the moving mechanism 20 is configured to meet the following conditions.

[0067] (Conditions satisfied by the moving mechanism 20)

[0068] The front side ( Figure 5 negative side in the Y direction), such as Figure 5 As shown by the solid line in FIG, it overlaps with the probe arrangement area Pa (ie, the probe P1) when viewed from above, and the back side ( Figure 5 The positive side in the Y direction in FIG) overlaps with the probe arrangement area Pa when viewed from above as shown by the double-dashed line.

[0069] Specifically, the moving mechanism 20 and the storage chamber 2 are structurally restricted so as to satisfy the above conditions. For example, the length and configuration position of the guide rail 22a of the moving mechanism 20 relative to the Y-stage 22 are set so as to satisfy the above conditions.

[0070] Here, the following comparative method is considered, which is different from the present embodiment. The comparative method is a method in which the moving mechanism 20 is configured so that the back side ( Figure 5 The positive side in the Y direction in FIG) can also overlap with the probe configuration area Pa when viewed from above as shown by the double-dashed line.

[0071] In this embodiment, compared with the above-mentioned comparative embodiment, the polishing table 40 is moved toward the front side ( Figure 5 The distance moved by the inspection platform 10 (negative side in the Y direction) is small, so the distance from the inspection platform 10 located in the retreat area T1 to the probe P1 when viewed from above can be shortened during grinding. Therefore, in this embodiment, the retreat area T1 of the inspection platform 10, that is, the moving range of the inspection platform 10 can be narrowed. Therefore, in this embodiment, the size of the inspection device 1 can be suppressed. In the comparative method, the size of the device is increased. Figure 5 It can also be seen that the inspection mounting table 10 and the like indicated by the two-dot chain line are not housed in the housing chamber 2 .

[0072] In addition, in the present embodiment, only the front side ( Figure 5 When the negative side in the Y direction (eg, the negative side in the Y direction) is used for polishing the probe P1, if the following method is adopted, the entire surface of the polishing wafer K can be used for polishing without waste.

[0073] If the polishing table 40 is rotated by the rotating mechanism 26 to adjust the orientation of the polishing wafer K placed on the polishing table 40, the entire surface of the polishing wafer K can be used for polishing without waste in this embodiment. Figure 5 After the entire surface of the first region R1 of the grinding wafer K (on the negative side of the Y direction in the figure) is used for grinding, the grinding stage 40 is rotated to rotate the grinding wafer K half a circle, thereby making the second region R2 of the unused grinding wafer K become the front side ( Figure 5 The negative side of the Y direction, etc.) is used for grinding.

[0074] Next, an example of an inspection process using the inspection apparatus 1 will be described.

[0075] During the inspection process, the transport mechanism 3b first removes the inspection target wafer W from the FOUP in the storage section 3a of the loader 3 and transports it into the storage chamber 2. The inspection target wafer W held by the transport mechanism 3b is then transferred to the inspection stage 10 by means of a plurality of lift pins (not shown) provided on the inspection stage 10. In other words, the inspection target wafer W is placed on the inspection stage 10.

[0076] Next, a camera (not shown) is used to confirm the exact positions of the inspection stage 10 and the probe P1. The inspection stage 10 is then moved by the moving mechanism 20, and the probe P1 positioned above the inspection stage 10 comes into contact with electrodes of devices to be inspected on the inspection target wafer W.

[0077] Then, an inspection signal is input to the probe P1. This starts the electrical characteristic inspection of the device to be inspected. When the electrical characteristic inspection is completed, the inspection stage 10 is moved and the same inspection is performed on the next device to be inspected on the wafer W to be inspected.

[0078] Thereafter, the steps subsequent to the step of placing the inspection object chip W are repeated until the electrical characteristics inspection of all devices formed on the inspection object chip W is completed. When the electrical characteristics inspection of all devices is completed, the inspection object chip W is sent out from the storage chamber 2 in the reverse order of when it was sent in, and is returned to the FOUP in the storage part 3a of the loader 3.

[0079] Next, an example of a polishing process of the probe P1 using the inspection apparatus 1 will be described.

[0080] (Load)

[0081] First, a polishing wafer K is placed on the polishing stage 40. Specifically, the transport mechanism 3b removes the polishing wafer K from the storage portion 3e of the loader 3 and transports it into the storage chamber 2. The polishing wafer K held by the transport mechanism 3b is then transferred to the polishing stage 40 by means of a plurality of lift pins (not shown) provided on the polishing stage 40.

[0082] (Retraction of Inspection and Polishing Stage 40)

[0083] Then, the above-mentioned inspection process is performed. At this time, the polishing stage 40 is moved to the retreat area T2 by the moving mechanism 20 so as to avoid the probe P1.

[0084] (grinding)

[0085] For example, during the inspection process described above, if the probe P1 fails to establish electrical connection with the electrodes on the inspection target wafer W, or if the probe P1 malfunctions, the electrical characteristic inspection of the device is interrupted, and the polishing of the probe P1 is performed in the following manner. Specifically, the inspection stage 10 is moved to the retreat area T1 by the moving mechanism 20 so as to avoid the probe P1, and the polishing stage 40 is moved by the moving mechanism 20, and the front side ( Figure 5The probe P1 is ground at a desired portion (negative side of the Y direction, etc.). The grinding of the probe P1 by the grinding wafer K is performed by overdriving the grinding stage 40, that is, by raising the grinding stage 40 by a predetermined distance from the position where the grinding wafer K contacts the probe P1. In addition, before grinding the probe P1, the accurate position of the probe P1 is confirmed by a camera (not shown). The accurate position of the grinding stage 40 can also be confirmed by a camera (not shown). Information on which part of the grinding wafer K is used in the grinding is stored in a storage unit (not shown) of the control unit 100.

[0086] Furthermore, during polishing, it is not necessary to remove the inspection target wafer W from the inspection stage 10 .

[0087] When polishing is completed, the electrical characteristics inspection of the device that was interrupted is resumed.

[0088] (Use the entire front side to judge)

[0089] Next, the control unit 100 determines that the front side ( Figure 5 Whether the entire surface of the area (on the negative side of the Y direction, etc.) has been used for grinding.

[0090] (Inside use judgment)

[0091] In addition, when it is determined that the entire front area of ​​the polishing wafer K placed on the polishing stage 40 has been used for polishing, the control unit 100 determines that the back side ( Figure 5 Whether the area (positive side in the Y direction, etc.) has been used for grinding.

[0092] (Rotation)

[0093] When the area designated as the back side is not being used for polishing, the polishing table 40 is rotated by the rotation mechanism 26 to adjust the orientation of the polishing wafer K placed on the polishing table 40. Specifically, the polishing wafer K is rotated, for example, half a turn. Information indicating that the polishing wafer K has been rotated is stored in a storage unit (not shown) of the control unit 100 and can be used in the above-mentioned back side utilization determination step.

[0094] (replace)

[0095] If the backside utilization determination step determines that the backside area of ​​the polishing wafer K placed on the polishing table 40 has also been used for polishing, the polishing wafer K is replaced. Specifically, the polishing wafer K to be replaced is transported from the storage chamber 2 in the reverse order of its entry and returned to the storage section 3e of the loader 3. The transport mechanism 3b then removes a new polishing wafer K from the storage section 3e of the loader 3 and places it on the polishing table 40 in the storage chamber 2. This replacement of the polishing wafer K is performed, for example, at the time the inspection target wafer W is replaced.

[0096] As described above, in this embodiment, the polishing wafer K can be transported by the transport mechanism 3 b for transporting the inspection target wafer W. Therefore, the probe P1 is polished using the polishing wafer K that can be automatically replaced.

[0097] Furthermore, in this embodiment, the polishing stage 40 for mounting the polishing wafer K is provided separately from the inspection stage 10 for mounting the inspection target wafer W. Therefore, it is not necessary to remove the inspection target wafer W from the inspection stage 10 for polishing using the probe P1 of the polishing wafer K. Therefore, even when the polishing wafer K is automatically replaced, the inspection productivity is not reduced.

[0098] Furthermore, in this embodiment, the moving mechanism 20 is configured so that the front side ( Figure 5 The negative side in the Y direction) can overlap with the probe P1 when viewed from above, while the inner side ( Figure 5 Therefore, even if the polishing stage 40 is provided separately from the inspection stage 10, an increase in the amount of space occupied by the inspection apparatus 1 can be suppressed.

[0099] Therefore, according to this embodiment, the probe P1 can be polished using the polishing wafer K transportable by the transport mechanism 3 b that transports the inspection target wafer W without reducing the inspection productivity while suppressing an increase in the size of the apparatus.

[0100] In addition, even if the structure of this embodiment is adopted, if the grinding stage 40 is rotated by the rotating mechanism 26 to adjust the orientation of the grinding wafer K placed on the grinding stage 40, the entire surface of the grinding wafer K can be effectively used for grinding without waste.

[0101] Alternatively, rather than rotating the polishing table 40 using the rotation mechanism 26 to adjust the orientation of the polishing wafer K placed on the polishing table 40, the following method may be employed. Specifically, the orientation of the polishing wafer K placed on the polishing table 40 may be adjusted using the pre-alignment mechanism 3c, serving as an adjustment mechanism. Specifically, after the entire surface of the first region R1 of the polishing wafer K, which is on the front side (the negative side in the Y direction in the figure), has been polished, the transport mechanism 3b transports the polishing wafer K from the polishing table 40 to the pre-alignment mechanism 3c. The pre-alignment mechanism 3c then rotates the polishing wafer K half a turn, after which the transport mechanism 3b returns the polishing wafer K to the polishing table 40 and places it on the polishing table 40 with the unused second region R2 on the front side. This allows the entire surface of the polishing wafer K to be polished without waste.

[0102] Figure 6 This is a cross-sectional view showing another example of the polishing stage.

[0103] Figure 6 The polishing table 40 has a top plate 200 and a cooling unit 210 and a heating unit 220 as a temperature control mechanism. The polishing table 40 is placed on the moving mechanism 20 (see FIG. 2 ) via a heat insulating member 300. Figure 2 etc.)

[0104] The top plate 200 is a member for placing the polishing wafer K and is formed in a disk shape, for example. One or more temperature sensors (not shown) are provided on the top plate 200 .

[0105] The cooling unit 210 cools the polishing wafer K placed on the top plate 200 by cooling the top plate 200. The cooling unit 210 is provided between the top plate 200 and the heating unit 220.

[0106] The configuration of the cooling unit 210 is not particularly limited, and any configuration may be employed as long as it can cool the top plate 200. As an example, the cooling unit 210 may include a refrigerant flow path (not shown) through which a refrigerant flows.

[0107] The heating unit 220 heats the polishing wafer K placed on the top plate 200 by heating the top plate 200. The heating unit 220 is disposed opposite to the top plate 200 with the cooling unit 210 interposed therebetween.

[0108] The configuration of the heating unit 220 is not particularly limited, and any configuration may be employed as long as it can heat the top plate 200. As an example, the heating unit 220 may include a resistance heater.

[0109] Figure 6 The polishing stage 40 can adjust the temperature of the polishing wafer K placed on the polishing stage 40 by using the cooling unit 210 and the heating unit 220. Specifically, Figure 6 The polishing stage 40 can adjust the temperature of the polishing wafer K placed on the polishing stage 40 to the set temperature during inspection of the inspection target wafer W placed on the inspection stage 10 using the cooling unit 210 and the heating unit 220.

[0110] The reason why the temperature is adjusted as described above is as follows.

[0111] The set temperature of the inspection target wafer W during inspection may be higher or lower than room temperature (eg, 25° C.).

[0112] If the set temperature of the inspection target wafer W during inspection is high, for example, the probe card P may be heated by the high-temperature inspection target wafer W via the probes P1 during inspection, causing the probe card P to warp downward. In this case, if the polishing stage 40 and the polishing wafer K placed thereon are at room temperature, the probe card P, which has reached a high temperature during inspection, is cooled by the room-temperature polishing wafer K during polishing of the probes P1 by the polishing wafer K, eliminating the warping. As a result, the contact pressure between the polishing wafer K and the probes P1 during polishing may decrease below the desired value, preventing sufficient polishing of the probes P1 and making it impossible to perform proper electrical inspection using the polished probes P1.

[0113] Furthermore, if the set temperature of the inspection target wafer W during inspection is low, for example, the probe card P is cooled by the low-temperature inspection target wafer W via the probes P1 during inspection, sometimes causing the probe card P to warp with its center portion bulging upward. In this case, if the polishing stage 40 and the polishing wafer K placed thereon are at room temperature, the probe card P, which has been low during inspection, is heated by the room-temperature polishing wafer K during polishing of the probes P1 by the polishing wafer K, thereby eliminating the warping. As a result, the contact pressure between the polishing wafer K and the probes P1 during polishing may increase beyond the desired value, that is, the probes P1 may be excessively polished, shortening the life of the probe card P.

[0114] exist Figure 6In the polishing stage 40, the temperature of the polishing wafer K placed on the polishing stage 40 is controlled as described above using the cooling unit 210 and the heating unit 220. This minimizes thermal fluctuations during polishing of the probe card P, which reaches a high or low temperature during inspection, by the polishing wafer K. Consequently, the probes P1 can be properly polished without shortening the life of the probe card P. Furthermore, electrical inspection can be properly performed using the polished probes P1.

[0115] In addition, either the cooling unit 210 or the heating unit 220 may be omitted. For example, when the electrical characteristics inspection is performed only at a high temperature, the cooling unit 210 may be omitted.

[0116] The embodiments disclosed herein are to be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims and the spirit thereof.

Claims

1. An inspection device for inspecting an inspection target substrate, characterized in that: include: an inspection mounting table for mounting the inspection target substrate; a conveying mechanism capable of conveying at least the inspection object substrate; a polishing stage for mounting a polishing substrate, the polishing substrate being a member for polishing a probe that contacts the substrate during inspection and having a shape and size capable of being transported by the transport mechanism; a first advancing and retreating mechanism for moving the inspection stage so as to advance and retreat the inspection stage relative to the probe; and a second advancing and retreating mechanism for moving the polishing stage so as to advance and retreat the polishing stage relative to the probe; The polishing stage is provided separately from the inspection stage. The retreat area of ​​the inspection stage and the retreat area of ​​the polishing stage are located on opposite sides of the probe in between when viewed from above. The second advancing and retreating mechanism is configured so that the front side of the polishing substrate placed on the polishing table, which is the side opposite to the retreat area side of the polishing table when the polishing substrate is divided into two parts in a plan view, can overlap with the probe in a plan view, while the back side of the polishing table, which is the retreat area side, cannot overlap with the probe in a plan view. The inspection device further includes a rotating mechanism for rotating the polishing stage. The rotating mechanism and the second advancing and retreating mechanism can be used to make the area on the back side of the polishing substrate placed on the polishing table, which cannot overlap with the probe when viewed from above, become the area on the front side and can overlap with the probe when viewed from above.

2. An inspection device for inspecting an inspection target substrate, characterized in that: include: an inspection mounting table for mounting the inspection target substrate; a conveying mechanism capable of conveying at least the inspection object substrate; a polishing stage for mounting a polishing substrate, the polishing substrate being a member for polishing a probe that contacts the substrate during inspection and having a shape and size capable of being transported by the transport mechanism; a first advancing and retreating mechanism for moving the inspection stage so as to advance and retreat the inspection stage relative to the probe; and a second advancing and retreating mechanism for moving the polishing stage so as to advance and retreat the polishing stage relative to the probe; The polishing stage is provided separately from the inspection stage. The retreat area of ​​the inspection stage and the retreat area of ​​the polishing stage are located on opposite sides of the probe in between when viewed from above. The second advancing and retreating mechanism is configured so that the front side of the polishing substrate placed on the polishing table, which is the side opposite to the retreat area side of the polishing table when the polishing substrate is divided into two parts in a plan view, can overlap with the probe in a plan view, while the back side of the polishing table, which is the retreat area side, cannot overlap with the probe in a plan view. The inspection device further includes an adjustment mechanism for adjusting the orientation of the polishing substrate placed on the polishing stage. The adjustment mechanism and the second advance and retreat mechanism can be used to make the area on the back side of the polishing substrate placed on the polishing table that cannot overlap with the probe when viewed from above become the area on the front side and can overlap with the probe when viewed from above.

3. The inspection device according to claim 1 or 2, characterized in that: The polishing stage includes a temperature regulating mechanism for regulating the temperature of the polishing substrate placed on the polishing stage.

4. The inspection device according to claim 3, wherein: The temperature adjustment mechanism can adjust the temperature of the polishing substrate placed on the polishing stage to a set temperature during inspection of the inspection target substrate placed on the inspection stage.

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