High temperature characteristic parameter mass production test method suitable for IGBT devices

Abstract

The present invention relates to a testing method, in particular to a mass production testing method for high temperature characteristic parameters of IGBT devices. During high temperature mass production testing, an IGBT device is first selected as an IGBT device sample, and a parameter calibration test is performed on the IGBT device sample to obtain a mass production test reference voltage VCEJZ, a mass production test reference voltage VGEJZ, and a mass production test reference pulse width TpJZ, and the mass production test reference voltage VCEJZ, the mass production test reference voltage VGEJZ, and the mass production test reference pulse width TpJZ are used as default test conditions to directly perform high temperature mass production testing on other IGBT devices, and the mass production test reference pulse width TpJZ and the delay time Tdelay are both no more than milliseconds, the test speed is fast, and the test efficiency is improved; the current IGBT device is heated by the on-state power consumption of the IGBT device itself, and it is not necessary to heat it by a constant temperature heating table or a constant temperature heating base during mass production testing, saving energy consumption and cost.

Description

Technical Field

[0001] The invention relates to a testing method, in particular to a mass production testing method for high temperature characteristic parameters of IGBT devices. Background Art

[0002] Semiconductor devices manufactured based on different types of semiconductor materials, such as single crystal silicon, silicon nitride, gallium nitride, etc., are widely used in consumer, industrial control, new energy and other fields. These semiconductor devices are different from integrated circuits and are generally called discrete devices, including diodes, bipolar transistors, thyristors, field effect transistors, insulated gate bipolar transistors IGBTs, etc.

[0003] Due to the temperature characteristics of the semiconductor materials used to manufacture semiconductor devices, the characteristic parameters of semiconductor devices will also show different characteristics at different temperatures, generally including room temperature characteristics, low temperature characteristics and high temperature characteristics, among which high temperature characteristics generally refer to parameter characteristics at a temperature 25 degrees higher than room temperature. In order to ensure the quality and quality of semiconductor devices and reduce the failure rate of semiconductor devices in the terminal use environment, semiconductor device manufacturers will arrange characteristic parameter testing and screening before the devices are mass-produced and shipped, among which high temperature parameter testing is one of the important and difficult links.

[0004] At present, there are generally two methods for high-temperature parameter testing of semiconductor devices: one is to heat the semiconductor device on a constant temperature heating table and then test it; the other is to put the semiconductor device into a constant temperature heating box for the required test. The main shortcomings of the two test methods are that the test time is long, the efficiency is low, the test cost is high, and it is not suitable for mass production testing. Generally, semiconductor devices are heated on a constant temperature heating table or a constant temperature heating box, and it takes several minutes to tens of minutes for the temperature of the device to be tested to stabilize at the required temperature. The higher the required test temperature, the longer the time, the lower the test efficiency, and the higher the corresponding energy consumption and test cost. Summary of the invention

[0005] The purpose of the present invention is to overcome the deficiencies in the prior art and provide a mass production test method for high temperature characteristic parameters of IGBT devices, which can be applied to mass production testing of IGBT devices before leaving the factory, improve test efficiency, and reduce test energy consumption and test costs.

[0006] According to the technical solution provided by the present invention, a high-temperature characteristic parameter mass production test method suitable for IGBT devices comprises the following steps:

[0007] Step 1, providing an IGBT device sample, and measuring sample device reference parameter test values ​​of sample device reference parameters of the IGBT device sample at different temperatures, so as to generate a device sample test reference calibration benchmark according to the sample device reference parameter test values ​​of the IGBT device sample at different temperatures;

[0008] Step 2, performing a parameter calibration test on the above-mentioned IGBT device sample. During the parameter calibration test, a positive voltage VCE loaded to the collector terminal and the emitter terminal of the IGBT device sample and a positive voltage VGE loaded to the gate terminal and the emitter terminal of the IGBT device sample are provided. The positive voltage VGE is a pulse voltage with a pulse width of Tp. The IGBT device sample is placed in an on state by the positive voltage VGE. After the IGBT device sample is turned on, the sample device reference parameter test value of the IGBT device sample is measured;

[0009] According to the device sample test reference calibration benchmark, determine the current junction temperature Tvj corresponding to the sample device reference parameter test value, if the current junction temperature Tvj does not match the reference reference junction temperature Tvj in the device sample test reference benchmark, adjust the current corresponding positive voltage VCE, positive voltage VGE and pulse width Tp until the adjusted current junction temperature Tvj matches the reference junction temperature Tvj in the device sample test reference benchmark;

[0010] When the current junction temperature Tvj matches the reference junction temperature Tvj in the device sample test reference, the current positive voltage VCE is set to the mass production test reference voltage VCEJZ, the current positive voltage VGE is set to the mass production test reference voltage VGEJZ, and the current pulse width Tp is set to the mass production test reference pulse width TpJZ;

[0011] Step 3: For an IGBT device of the same model as the above-mentioned IGBT device sample, a mass production test reference voltage VCEJZ, a mass production test reference voltage VGEJZ and a mass production test reference pulse width TpJZ are loaded onto the IGBT device to perform the required high-temperature mass production test.

[0012] In step 1, the sample device reference parameters include device static parameters or dual-pulse switch parameters, wherein the device static parameters include turn-on threshold voltage Vth, saturation conduction voltage drop Vce, CE leakage current Ices, gate leakage current Iges, breakdown voltage BVces or diode forward voltage drop VF, and the dual-pulse switch parameters include current rise time tr, turn-on delay time td, turn-on loss Eon, current fall time tf, turn-off delay time td or turn-off loss Eoff.

[0013] When measuring the sample device reference parameter test values ​​of the sample device reference parameters of the IGBT device sample at different temperatures, the temperature of the IGBT device sample is gradually increased from room temperature to the maximum operating junction temperature Tvjmax, and when the temperature of the IGBT device sample is at a preset temperature state, the corresponding sample device reference parameter test value is measured;

[0014] A temperature characteristic curve or a temperature characteristic comparison table is prepared by combining the sample device reference parameter test values ​​with the temperature conditions corresponding to the sample device reference parameter test values, so as to form a device sample test reference calibration benchmark using the prepared temperature characteristic curve or temperature characteristic comparison table.

[0015] In step 2, the pulse width Tp is 1 μs to 1 ms;

[0016] After the IGBT device sample is placed in an on state by a positive voltage VGE, a sample device reference parameter test value of the IGBT device sample is measured after a delay time Tdelay.

[0017] The high temperature mass production test includes an IGBT static test, an IGBT reverse bias safe operating area RBSOA test, an IGBT double pulse dynamic test or an IGBT short circuit safe operating area SCSOA test.

[0018] During the parameter calibration test, the load connected to the IGBT device sample is short-circuited.

[0019] The IGBT device is an IGBT single tube or an IGBT module.

[0020] The advantages of the present invention are as follows: during high-temperature mass production testing, an IGBT device is first selected as an IGBT device sample, and a parameter calibration test is performed on the IGBT device sample to obtain a mass production test reference voltage VCEJZ, a mass production test reference voltage VGEJZ, and a mass production test reference pulse width TpJZ, and the mass production test reference voltage VCEJZ, the mass production test reference voltage VGEJZ, and the mass production test reference pulse width TpJZ are used as default test conditions to directly perform high-temperature mass production testing on other IGBT devices, the mass production test reference pulse width TpJZ and the delay time Tdelay both do not exceed the millisecond level, the test speed is fast, and the test efficiency is improved; the current IGBT device is heated by the on-state power consumption of the IGBT device itself, and there is no need to heat it through a constant temperature heating table or a constant temperature heating base during mass production testing, thereby saving energy consumption and cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a flow chart of the present invention.

[0022] Figure 2It is a schematic diagram of forming a reference calibration benchmark for device sample testing using a temperature characteristic curve according to the present invention. DETAILED DESCRIPTION

[0023] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0024] like Figure 1 As shown: In order to be applicable to mass production testing of IGBT devices before delivery, improve test efficiency, reduce test energy consumption and test cost, the high temperature characteristic parameter mass production test method of the present invention includes the following steps:

[0025] Step 1, providing an IGBT device sample, and measuring sample device reference parameter test values ​​of sample device reference parameters of the IGBT device sample at different temperatures, so as to generate a device sample test reference calibration benchmark according to the sample device reference parameter test values ​​of the IGBT device sample at different temperatures;

[0026] Specifically, the IGBT device sample is a device to be tested for factory mass production. The IGBT device sample is an IGBT single tube or an IGBT module. The specific form of the IGBT device sample can be related to the actual factory mass production test and is well known to personnel in this technical field.

[0027] In a specific implementation, when measuring the sample device reference parameter test values ​​of the sample device reference parameters of the IGBT device sample at different temperatures, the temperature of the IGBT device sample is gradually increased from room temperature to the maximum operating junction temperature Tvjmax, and when the temperature of the IGBT device sample is at a preset temperature state, the corresponding sample device reference parameter test value is measured;

[0028] In the embodiment of the present invention, the IGBT device sample can be heated by using an existing commonly used constant temperature heating table or constant temperature heating box, so that the temperature of the IGBT device sample gradually increases from room temperature to the maximum operating junction temperature Tvjmax. When the IGBT device sample is heated, the interval of each temperature increase can be the same, such as taking 5°C as a step, starting from 25°C, the temperature of the IGBT device sample is the maximum to the maximum operating junction temperature Tvjmax. The temperature increase state of the IGBT device sample can be selected as needed, which is related to the type and parameters of the IGBT device sample and is well known to those skilled in the art. The maximum operating junction temperature Tvjmax is a characteristic parameter of the IGBT device sample. For a certain IGBT device sample, the maximum operating junction temperature Tvjmax can be clearly obtained, which is specifically consistent with the existing ones and will not be repeated here.

[0029] When the temperature of the IGBT device sample is at a preset temperature state, the corresponding sample device reference parameter test value is measured, specifically, when the IGBT device sample is at a preset temperature state, the sample device reference parameter test value of the sample device reference parameter is measured by the technical means commonly used in this technical field, such as at 25°C, the sample device reference parameter is measured at the sample device reference parameter test value of the IGBT device sample at 25°C, and other situations are similar and will not be repeated here.

[0030] In specific implementation, the sample device reference parameters include device static parameters or dual pulse switch parameters, wherein the device static parameters include turn-on threshold voltage Vth, saturation conduction voltage drop Vce, CE leakage current Ices, gate leakage current Iges, breakdown voltage BVces or diode forward voltage drop VF, and the dual pulse switch parameters include current rise time tr, turn-on delay time td, turn-on loss Eon, current fall time tf, turn-off delay time td or turn-off loss Eoff. The specific types of sample device reference parameters can be selected according to actual needs. The specific conditions of the above-mentioned device static parameters and dual pulse switch parameters are consistent with the existing ones, which are well known to those skilled in the art and will not be described in detail here.

[0031] Furthermore, by making a temperature characteristic curve or a temperature characteristic comparison table based on the sample device reference parameter test value and the temperature state corresponding to the sample device reference parameter test value, the device sample test reference calibration benchmark is formed using the produced temperature characteristic curve or temperature characteristic comparison table.

[0032] In the embodiment of the present invention, a temperature characteristic curve or a temperature characteristic comparison table can be prepared for the reference parameter test values ​​of the measured multiple sample devices. Figure 2 As shown; for the temperature characteristic comparison table, it can be specifically:

[0033] Temperature(℃) Test value 25 Value 1 30 Value 2 35 Value 3 40 Value 4 45 Value 5 50 Value 6 … … … … Tvjmax Value N

[0034] The specific conditions of the temperature characteristic curve and the temperature characteristic comparison table can be selected according to actual needs, so as to form the required device sample test reference calibration benchmark. The device sample test reference calibration benchmark can be used as a comparison basis for the following parameter calibration tests, as described in detail below.

[0035] Step 2, performing a parameter calibration test on the above-mentioned IGBT device sample. During the parameter calibration test, a positive voltage VCE loaded to the collector terminal and the emitter terminal of the IGBT device sample and a positive voltage VGE loaded to the gate terminal and the emitter terminal of the IGBT device sample are provided. The positive voltage VGE is a pulse voltage with a pulse width of Tp. The IGBT device sample is placed in an on state by the positive voltage VGE. After the IGBT device sample is turned on, the sample device reference parameter test value of the IGBT device sample is measured;

[0036] According to the device sample test reference calibration benchmark, determine the current junction temperature Tvj corresponding to the sample device reference parameter test value, if the current junction temperature Tvj does not match the reference reference junction temperature Tvj in the device sample test reference benchmark, adjust the current corresponding positive voltage VCE, positive voltage VGE and pulse width Tp until the adjusted current junction temperature Tvj matches the reference junction temperature Tvj in the device sample test reference benchmark;

[0037] When the current junction temperature Tvj matches the reference junction temperature Tvj in the device sample test reference, the current positive voltage VCE is set to the mass production test reference voltage VCEJZ, the current positive voltage VGE is set to the mass production test reference voltage VGEJZ, and the current pulse width Tp is set to the mass production test reference pulse width TpJZ;

[0038] Specifically, when performing parameter calibration test on IGBT device samples, an existing commonly used test system can be used, and the type of test system can be selected as needed to meet the sample device reference parameter test values ​​for measuring the IGBT device samples in the present invention.

[0039] During the parameter calibration test, the load connected to the IGBT device sample is short-circuited. The load can be a resistive load or an inductive load connected to the collector terminal and the emitter terminal of the IGBT device sample. After the load is short-circuited, when the IGBT device sample is subjected to the parameter calibration test, the voltage and current generated by the test will be borne by the IGBT device sample. The product of the current and the voltage is the power consumption of the IGBT device sample. The power consumption causes the temperature of the IGBT device sample to rise, that is, the conduction loss can be used to achieve the heating of the IGBT device sample. After the IGBT device sample is heated, the junction temperature Tvj of the IGBT device sample increases accordingly.

[0040] During specific implementation, a positive voltage VCE is loaded onto the collector terminal and the emitter terminal of the IGBT device sample, and at the same time, a positive voltage VGE is loaded onto the gate terminal and the emitter terminal of the IGBT device sample, wherein the positive voltage VGE is a pulse voltage with a pulse width of Tp. The positive voltage VGE is used to put the IGBT device sample into an on state, and after the IGBT device sample is turned on, the sample device reference parameter test value of the IGBT device sample is measured.

[0041] Specifically, the pulse width Tp is 1μs to 1ms; after the IGBT device sample is turned on by the positive voltage VGE, the sample device reference parameter test value of the IGBT device sample is measured after the delay time Tdelay. The delay time Tdelay is generally also in the millisecond level, and the specific value of the delay time Tdelay can be selected according to actual needs.

[0042] Figure 2 In FIG. 1 , the ordinate is the sample device reference parameter test value. Therefore, after obtaining a sample device reference parameter test value through parameter calibration test, the current junction temperature Tvj corresponding to the sample device reference parameter test value can be directly determined according to the device sample test reference correction benchmark.

[0043] The determined current junction temperature is compared with the reference reference junction temperature Tvj in the device sample test reference benchmark, and the reference reference junction temperature Tvj in the device sample test reference benchmark is generally the maximum operating junction temperature Tvjmax. The current junction temperature Tvj matches the reference reference junction temperature Tvj in the device sample test reference benchmark, which specifically means that the current junction temperature Tvj is consistent with the reference reference junction temperature Tvj, or the corresponding difference between the current junction temperature Tvj and the reference reference junction temperature Tvj is within an allowable range, and the allowable range of the difference can be specifically determined according to the requirements such as the accuracy of the actual mass production test.

[0044] In specific implementation, it can be known from the basic working principle of IGBT that, when the voltage magnitude of the positive voltage VGE and the pulse width Tp of the positive voltage VGE remain unchanged, the higher the positive voltage VCE voltage is, the higher the loss generated by the IGBT device is, and the higher the current junction temperature Tvj of the IGBT device is; and when the positive voltage VCE voltage and the voltage pulse width Tp of the positive voltage VGE remain unchanged, the higher the positive voltage VGE voltage is, the higher the loss generated by the IGBT device is, and the higher the current junction temperature Tvj of the IGBT device is. When the voltage magnitude of the positive voltage VCE and the voltage pulse width Tp of the positive voltage VGE remain unchanged, the longer the pulse width Tp of the positive voltage VGE is, the higher the loss generated by the IGBT device is, and the higher the current junction temperature Tvj of the IGBT device is.

[0045] Therefore, when the current junction temperature Tvj does not match the reference reference junction temperature Tvj in the device sample test reference benchmark, the voltage magnitude of the positive voltage VCE, the voltage magnitude of the positive voltage VGE and / or the magnitude of the pulse width Tp can be adjusted according to the corresponding difference state between the current junction temperature Tvj and the reference reference junction temperature Tvj in the device sample test reference benchmark, until the current junction temperature Tvj matches the reference reference junction temperature Tvj in the device sample test reference benchmark. In specific implementation, the specific method and process of adjusting the voltage magnitude of the positive voltage VCE, the voltage magnitude of the positive voltage VGE and / or the magnitude of the pulse width Tp until the current junction temperature Tvj matches the reference reference junction temperature Tvj in the device sample test reference benchmark can be selected according to actual needs, so as to meet the specific adjustment requirements, and will not be repeated here.

[0046] During specific adjustment, the positive voltage VCE is required to exceed the voltage that makes the PN junction conduct, which is generally 0.7V, and cannot exceed the CE breakdown voltage VCEmax of the IGBT device; the positive voltage VGE is required to be greater than the conduction threshold voltage Vth of the IGBT device, and cannot exceed the GE breakdown voltage VGEmax of the IGBT device.

[0047] In an embodiment of the present invention, when the current junction temperature Tvj matches the reference reference junction temperature Tvj in the device sample test reference reference, the current positive voltage VCE is set to the mass production test reference voltage VCEJZ, the current positive voltage VGE is set to the mass production test reference voltage VGEJZ, and the current pulse width Tp is set to the mass production test reference pulse width TpJZ.

[0048] Step 3: For an IGBT device of the same model as the above-mentioned IGBT device sample, a mass production test reference voltage VCEJZ, a mass production test reference voltage VGEJZ and a mass production test reference pulse width TpJZ are loaded onto the IGBT device to perform the required high-temperature mass production test.

[0049] In an embodiment of the present invention, after determining the mass production test reference voltage VCEJZ, the mass production test reference voltage VGEJZ and the mass production test reference pulse width TpJZ, the IGBT device can be subjected to mass production testing, wherein the IGBT device for mass production testing is of the same model as the IGBT device sample, and the specific situation of the same model as the IGBT device sample is consistent with the existing knowledge and is well known to personnel in this technical field, and will not be repeated here.

[0050] When conducting mass production testing on IGBT devices, the mass production test reference voltage VCEJZ is loaded onto the collector terminal and the emitter terminal of the IGBT device, and the mass production test reference voltage VGEJZ is loaded onto the gate terminal and the emitter terminal of the IGBT device. The pulse width of the mass production test reference voltage VGEJZ is the mass production test reference pulse width TpJZ. After being loaded onto the IGBT device, the IGBT device can be subjected to the required high-temperature mass production test; of course, after the IGBT device is turned on, a delay time Tdelay is required before the high-temperature mass production test can be conducted. High-temperature mass production testing includes IGBT static testing, IGBT reverse bias safe operating area RBSOA testing, IGBT double pulse dynamic testing, or IGBT short circuit safe operating area SCSOA testing. The specific types of high-temperature mass production testing and specific testing methods are consistent with the existing ones and are well known to those skilled in the art, so they will not be described in detail here.

[0051] In summary, during high-temperature mass production testing, the present invention first selects an IGBT device as an IGBT device sample, and performs parameter calibration testing on the IGBT device sample to obtain a mass production test reference voltage VCEJZ, a mass production test reference voltage VGEJZ, and a mass production test reference pulse width TpJZ, and uses the mass production test reference voltage VCEJZ, the mass production test reference voltage VGEJZ, and the mass production test reference pulse width TpJZ as default test conditions to directly perform high-temperature mass production testing on other IGBT devices. The mass production test reference pulse width TpJZ and the delay time Tdelay are both within the millisecond level, and the test speed is fast, thereby improving the test efficiency. The current IGBT device is heated by the on-state power consumption of the IGBT device itself, and there is no need to heat it through a constant temperature heating table or a constant temperature heating base during mass production testing, thereby saving energy consumption and cost.

Claims

1. A high temperature characteristic parameter mass production test method suitable for IGBT devices, characterized in that: The high temperature characteristic parameter mass production test method comprises the following steps: Step 1, providing an IGBT device sample, and measuring sample device reference parameter test values ​​of sample device reference parameters of the IGBT device sample at different temperatures, so as to generate a device sample test reference calibration benchmark according to the sample device reference parameter test values ​​of the IGBT device sample at different temperatures; Step 2, performing a parameter calibration test on the above-mentioned IGBT device sample. During the parameter calibration test, a positive voltage VCE loaded to the collector terminal and the emitter terminal of the IGBT device sample and a positive voltage VGE loaded to the gate terminal and the emitter terminal of the IGBT device sample are provided. The positive voltage VGE is a pulse voltage with a pulse width of Tp. The IGBT device sample is placed in an on state by the positive voltage VGE. After the IGBT device sample is turned on, the sample device reference parameter test value of the IGBT device sample is measured; According to the device sample test reference calibration benchmark, determine the current junction temperature Tvj corresponding to the sample device reference parameter test value, if the current junction temperature Tvj does not match the reference reference junction temperature Tvj in the device sample test reference benchmark, adjust the current corresponding positive voltage VCE, positive voltage VGE and pulse width Tp until the adjusted current junction temperature Tvj matches the reference junction temperature Tvj in the device sample test reference benchmark; When the current junction temperature Tvj matches the reference junction temperature Tvj in the device sample test reference, the current positive voltage VCE is set to the mass production test reference voltage VCEJZ, the current positive voltage VGE is set to the mass production test reference voltage VGEJZ, and the current pulse width Tp is set to the mass production test reference pulse width TpJZ; Step 3: For an IGBT device of the same model as the above-mentioned IGBT device sample, the mass production test reference voltage VCEJZ, the mass production test reference voltage VGEJZ and the mass production test reference pulse width TpJZ are loaded onto the IGBT device to perform the required high-temperature mass production test.

2. The high temperature characteristic parameter mass production test method applicable to IGBT devices according to claim 1 is characterized in that: In step 1, the sample device reference parameters include device static parameters or dual-pulse switch parameters, wherein the device static parameters include turn-on threshold voltage Vth, saturation conduction voltage drop Vce, CE leakage current Ices, gate leakage current Iges, breakdown voltage BVces or diode forward voltage drop VF, and the dual-pulse switch parameters include current rise time tr, turn-on delay time td, turn-on loss Eon, current fall time tf, turn-off delay time td or turn-off loss Eoff.

3. The high temperature characteristic parameter mass production test method applicable to IGBT devices according to claim 1 is characterized in that: When measuring the sample device reference parameter test values ​​of the sample device reference parameters of the IGBT device sample at different temperatures, the temperature of the IGBT device sample is gradually increased from room temperature to the maximum operating junction temperature Tvjmax, and when the temperature of the IGBT device sample is at a preset temperature state, the corresponding sample device reference parameter test value is measured; A temperature characteristic curve or a temperature characteristic comparison table is prepared by combining the sample device reference parameter test values ​​with the temperature conditions corresponding to the sample device reference parameter test values, so as to form a device sample test reference calibration benchmark using the prepared temperature characteristic curve or temperature characteristic comparison table.

4. The high temperature characteristic parameter mass production test method applicable to IGBT devices according to claim 1 is characterized in that: In step 2, the pulse width Tp is 1 μs to 1 ms; After the IGBT device sample is placed in an on state by a positive voltage VGE, a sample device reference parameter test value of the IGBT device sample is measured after a delay time Tdelay.

5. The high temperature characteristic parameter mass production test method applicable to IGBT devices according to any one of claims 1 to 4, characterized in that: The high temperature mass production test includes an IGBT static test, an IGBT reverse bias safe operating area RBSOA test, an IGBT double pulse dynamic test or an IGBT short circuit safe operating area SCSOA test.

6. The high temperature characteristic parameter mass production test method applicable to IGBT devices according to any one of claims 1 to 4, characterized in that: During the parameter calibration test, the load connected to the IGBT device sample is short-circuited.

7. The high temperature characteristic parameter mass production test method applicable to IGBT devices according to any one of claims 1 to 4, characterized in that: The IGBT device is an IGBT single tube or an IGBT module.

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