Conductive structure and its manufacturing method, transistor and its manufacturing method, display panel

Abstract

The present invention provides a conductive structure and a preparation method thereof, a transistor and a preparation method thereof, and a display panel, relating to the technical field of displays, which can avoid corrosion problems caused by reaction with water vapor, thereby improving oxidation resistance and product performance. The preparation method of the conductive structure includes: forming a conductive thin film and a first conductive isolation thin film covering the conductive thin film on a front film layer; performing wet etching on a first part to be etched and a third part to be etched with a first etching solution to remove the first part to be etched and the third part to be etched; performing wet etching on a second part to be etched with a second etching solution to remove the second part to be etched; bombarding a first conductive isolation part with plasma so that the part of the first conductive isolation part that does not cover the conductive part covers at least the side surface of the part of the conductive part.

Description

Technical Field

[0001] The present invention relates to the field of display technologies, and particularly to a conductive structure and a method for preparing the same, a transistor and a method for preparing the same, and a display panel. Background Art

[0002] Mini-LED refers to products with a chip size of less than 200 microns. Glass-based or PI-based Mini-LED backlights are proposed for use because they can achieve ultra-thinness, can rival OLED products in terms of realistic effects, and have a more competitive advantage in material costs compared to OLEDs.

[0003] Thin Film Transistors (TFTs) formed using oxide technology play an important role in the field of thin film transistors due to their good uniformity, high mobility, etc. The source and drain electrodes of oxide-based thin film transistors are mostly made of metal copper, but copper is prone to react with the invading water vapor, resulting in corrosion, which in turn affects the characteristics of the transistors. Summary of the Invention

[0004] Embodiments of the present invention provide a conductive structure and a method for preparing the same, a transistor and a method for preparing the same, and a display panel, which can avoid corrosion problems caused by reaction with water vapor, thereby improving antioxidant properties and product performance.

[0005] To achieve the above object, the embodiments of the present invention adopt the following technical solutions:

[0006] In a first aspect, a method for preparing a conductive structure is provided, including:

[0007] Forming a conductive thin film and a first conductive isolation thin film covering the conductive thin film on a front film layer, wherein the conductive thin film includes a first to-be-etched portion, a second to-be-etched portion, and a conductive portion, the first to-be-etched portion surrounds the second to-be-etched portion, and the second to-be-etched portion surrounds the conductive portion; the first conductive isolation thin film includes a third to-be-etched portion and a first conductive isolation portion, the third to-be-etched portion surrounds the first conductive isolation portion; the orthographic projection of the conductive portion on the front film layer is located within the orthographic projection of the first conductive isolation portion on the front film layer;

[0008] Performing wet etching on the first to-be-etched portion and the third to-be-etched portion using a first etching solution to remove the first to-be-etched portion and the third to-be-etched portion;

[0009] Performing wet etching on the second to-be-etched portion using a second etching solution to remove the second to-be-etched portion, wherein the etching rate of the second to-be-etched portion by the second etching solution is greater than the etching rate of the first conductive isolation portion by the second etching solution;

[0010] The first conductive isolation part is bombarded with plasma so that the part of the first conductive isolation part that does not cover the conductive part covers at least part of the side surface of the conductive part, forming the conductive structure.

[0011] Optionally, the oxidation resistance of the material of the first conductive isolation part is greater than that of the material of the conductive part.

[0012] Optionally, the material of the first conductive isolation part includes any one or any combination of molybdenum, niobium, nickel, and titanium, and the material of the conductive part includes copper or aluminum.

[0013] Optionally, when the material of the conductive part is copper and the material of the first conductive isolation part is a molybdenum-niobium alloy, the first etching solution includes hydrogen peroxide and the second etching solution includes nitric acid.

[0014] Optionally, 1 < the ratio of the etching rate of the second part to be etched by the second etching solution to the etching rate of the first conductive isolation part by the second etching solution < 1000.

[0015] Optionally, 1 / 20 < the ratio of the thickness of the first conductive isolation part in the direction perpendicular to the front film layer to the thickness of the conductive part in the direction perpendicular to the front film layer < 1 / 2.

[0016] Optionally, the bombarding the first conductive isolation part with plasma includes:

[0017] At a preset temperature, the first conductive isolation part is bombarded with nitrogen plasma, where 250°C < the preset temperature < 400°C.

[0018] Optionally, before forming the conductive thin film on the front film layer and the first conductive isolation thin film covering the conductive thin film, the method further includes:

[0019] Forming a second conductive isolation thin film on the front film layer, where the second conductive isolation thin film includes a fourth part to be etched and a second conductive isolation part, and the fourth part to be etched surrounds the second conductive isolation part;

[0020] The forming the conductive thin film on the front film layer and the first conductive isolation thin film covering the conductive thin film includes:

[0021] Forming a conductive thin film on the second conductive isolation thin film and a first conductive isolation thin film covering the conductive thin film, where the orthographic projection of the conductive part on the front film layer is located within the orthographic projection of the second conductive isolation part on the front film layer;

[0022] The wet etching of the first to-be-etched portion and the third to-be-etched portion using the first etching solution includes:

[0023] The first to-be-etched portion, the third to-be-etched portion, and the fourth to-be-etched portion are wet-etched using the first etching solution to remove the first to-be-etched portion, the third to-be-etched portion, and the fourth to-be-etched portion.

[0024] Optionally, the material of the second conductive isolation portion is the same as the material of the first conductive isolation portion.

[0025] In a second aspect, a method for manufacturing a transistor is provided, including:

[0026] Providing a substrate;

[0027] Forming a gate and / or source / drain on the substrate using the above method.

[0028] In a third aspect, a conductive structure is provided, including: a conductive portion and a first conductive isolation portion arranged in a stacked manner;

[0029] The first conductive isolation portion covers the surface of the conductive portion close to the first conductive isolation portion and also at least covers a part of the side surface of the conductive portion.

[0030] Optionally, the conductive structure further includes a second conductive isolation portion, and the second conductive isolation portion is arranged on a side of the conductive portion away from the first conductive isolation portion;

[0031] The entirety formed by the first conductive isolation portion and the second conductive isolation portion covers all surfaces of the conductive portion.

[0032] Optionally, the oxidation resistance of the material of the first conductive isolation portion and the oxidation resistance of the material of the second conductive isolation portion are respectively greater than the oxidation resistance of the material of the conductive portion.

[0033] In a fourth aspect, a transistor is provided, including: a gate and source / drain, where the gate and / or the source / drain have the same structure as the above conductive structure.

[0034] In a fifth aspect, a display panel is provided, including: the above transistor.

[0035] Embodiments of the present invention provide a conductive structure, a method for preparing the same, a transistor, a method for preparing the same, and a display panel. The method for preparing the conductive structure includes: forming a conductive thin film and a first conductive isolation thin film covering the conductive thin film on a front film layer, wherein the conductive thin film includes a first to-be-etched portion, a second to-be-etched portion, and a conductive portion, the first to-be-etched portion surrounds the second to-be-etched portion, and the second to-be-etched portion surrounds the conductive portion; the first conductive isolation thin film includes a third to-be-etched portion and a first conductive isolation portion, and the third to-be-etched portion surrounds the first conductive isolation portion; a positive projection of the conductive portion on the front film layer is located within a positive projection of the first conductive isolation portion on the front film layer; performing wet etching on the first to-be-etched portion and the third to-be-etched portion using a first etching solution to remove the first to-be-etched portion and the third to-be-etched portion; performing wet etching on the second to-be-etched portion using a second etching solution to remove the second to-be-etched portion, wherein a etching rate of the second to-be-etched portion by the second etching solution is greater than an etching rate of the first conductive isolation portion by the second etching solution; bombarding the first conductive isolation portion with plasma so that a portion of the first conductive isolation portion that does not cover the conductive portion covers at least a side surface of the conductive portion, thereby forming the conductive structure.

[0036] The method for preparing the above conductive structure does not additionally increase a photolithography process, and the process flow is simple, which is beneficial to cost reduction. The conductive structure obtained by this preparation method includes a conductive portion and a first conductive isolation portion arranged in a stacked manner; the first conductive isolation portion covers a surface of the conductive portion close to the first conductive isolation portion and at least covers a side surface of the conductive portion. In the conductive structure formed by this preparation method, on the one hand, the surface of the conductive portion close to the first conductive isolation portion is covered by the first conductive isolation portion, thereby preventing water vapor from entering the conductive portion through the side of the conductive portion close to the first conductive isolation portion, and thus improving the oxidation resistance of the conductive structure; on the other hand, at least a part of the exposed side surface of the conductive portion is covered by the first conductive isolation portion, thereby greatly reducing the corrosion problem caused by water vapor entering the conductive portion through the side surface of the conductive portion, and thus further improving the oxidation resistance and corrosion resistance of the conductive structure. Applying this conductive structure to a product can greatly improve the performance and quality of the product.

[0037] The above description is only an overview of the technical solution of the present application. In order to be able to understand the technical means of the present application more clearly, it can be implemented according to the content of the specification. And in order to make the above and other objects, features, and advantages of the present application more obvious and understandable, the following specifically gives the specific embodiments of the present application. Description of the Drawings

[0038] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can also be obtained based on these drawings.

[0039] Figures 1-5 It is a structural diagram of the preparation process of a conductive structure provided by an embodiment of the present invention;

[0040] Figure 6 It is a diagram of the potential change of copper and molybdenum in phosphoric acid and nitric acid etching solutions respectively provided by an embodiment of the present invention;

[0041] Figures 7-12 It is another structural diagram of the preparation process of a conductive structure provided by an embodiment of the present invention;

[0042] Figure 13 It is an electron microscope image of a conductive structure provided by an embodiment of the present invention;

[0043] Figures 14-17 It is a schematic structural diagram of four transistors provided by an embodiment of the present invention. Detailed implementation manners

[0044] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0045] In the embodiments of the present invention, the same items or similar items with basically the same functions and effects are distinguished by using words such as "first", "second", "third", "fourth", etc., only for clearly describing the technical solutions of the embodiments of the present invention, and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features.

[0046] In the embodiments of the present invention, the orientation or positional relationship indicated by terms such as "upper" and "lower" is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention.

[0047] The embodiments of the present invention provide a method for preparing a conductive structure, including:

[0048] S01. Refer to Figure 1As shown, a conductive thin film 2 and a first conductive isolation thin film 1 covering the conductive thin film 2 are formed on the front film layer 3. Among them, the conductive thin film 2 includes a first part to be etched 7, a second part to be etched 8, and a conductive part 10. The first part to be etched 7 surrounds the second part to be etched 8, and the second part to be etched 8 surrounds the conductive part 10. The first conductive isolation thin film 1 includes a third part to be etched 9 and a first conductive isolation part 11. The third part to be etched 9 surrounds the first conductive isolation part 11. The orthographic projection of the conductive part 10 on the front film layer 3 is located within the orthographic projection of the first conductive isolation part 11 on the front film layer 3.

[0049] The specific method for forming the conductive thin film and the first conductive isolation thin film is not limited. For example, methods such as spin coating process, magnetron sputtering process, or chemical vapor deposition process can be used for preparation.

[0050] In the above conductive thin film, the materials of the first part to be etched, the second part to be etched, and the conductive part are the same; in the first conductive isolation thin film, the materials of the third part to be etched and the first conductive isolation part are the same.

[0051] S02. Use a first etching solution to perform wet etching on the first part to be etched and the third part to be etched to remove Figure 1 the shown first part to be etched 7 and the third part to be etched 9, and form a structure as shown in Figure 2 the figure.

[0052] Here, the specific composition of the first etching solution is not limited, and it specifically needs to be selected according to the materials of the first part to be etched and the second part to be etched. When performing step S02, in order to protect the first conductive isolation part 11, the second part to be etched 8, and the conductive part 10, use Figure 1 and Figure 2 the shown mask 26 for protection.

[0053] S03. Use a second etching solution to perform wet etching on the second part to be etched to remove Figure 2 the shown second part to be etched 8. Among them, the etching rate of the second part to be etched by the second etching solution is greater than the etching rate of the first conductive isolation part by the second etching solution, so as to obtain a structure as shown in Figure 3 the figure. After removing the mask 26, a structure as shown in Figure 4 the figure is obtained.

[0054] The specific composition of the second etching solution is not limited here. Specifically, it needs to be selected according to the materials of the first part to be etched and the second part to be etched. The etching rate of the second part to be etched by the second etching solution is greater than the etching rate of the first conductive isolation part by the second etching solution. Then, the selectivity of the second etching solution is greater than 1. The selectivity of the second etching solution is the ratio of the etching rate of the second part to be etched by the second etching solution to the etching rate of the first conductive isolation part by the second etching solution. By using the second etching solution with a suitable selectivity, the second part to be etched can be removed completely. At the same time, the influence on the first conductive isolation part can be ignored.

[0055] The principle for the etching rate of the second part to be etched by the second etching solution being greater than the etching rate of the first conductive isolation part by the second etching solution is as follows: Utilize the potential changes of different materials in etching solutions of different systems. The potential changes of copper in phosphoric acid and nitric acid etching solutions and the potential changes of molybdenum in phosphoric acid and nitric acid etching solutions are used to illustrate this principle. Refer to Figure 6 As shown, when the current density is A1, the potential E1 of copper in the phosphoric acid etching solution (Cu in only H3PO4) is greater than the potential E2 of molybdenum in the phosphoric acid etching solution (Mo in only H3PO4). The etching rate of copper by the phosphoric acid etching solution is less than the etching rate of molybdenum by the phosphoric acid etching solution. When the current density is A2, the potential E3 of copper in the nitric acid etching solution (Cu in only HNO3) is less than the potential E4 of molybdenum in the nitric acid etching solution (Mo in only HNO3). The etching rate of copper by the nitric acid etching solution is greater than the etching rate of molybdenum by the nitric acid etching solution. Figure 6 In [reference], the abscissa Current Densit represents the current density, and the ordinate Potential represents the potential. Based on this principle, and by selecting a suitable etching solution, it can be achieved that in step S03, the second part to be etched is removed completely. At the same time, the influence on the first conductive isolation part can be ignored.

[0056] After performing step S03, refer to Figure 4 As shown, the part 110 of the first conductive isolation part 11 that does not cover the conductive part 10 is similar to a small tail in [reference]. In subsequent steps, this tail part bends and covers the side surface of the conductive part.

[0057] It should be noted that step S02 and step S03 can be completed in the same process without adding processes. Compared with the original process, only one etching chamber needs to be added.

[0058] S04. Bombard the first conductive isolation part with plasma so that Figure 4 in the first conductive isolation part 11 of [reference], the part 110 that does not cover the conductive part 10 covers at least part of the side surface of the conductive part 10, forming asFigure 5 The conductive structure shown. Figure 5 Taking the example where the entire side surface of the conductive part 10 is covered by the first conductive isolation part 11 for illustration.

[0059] Here, the type of plasma is not limited. For example, nitrogen plasma can be used to bombard the first conductive isolation part.

[0060] After bombarding the first conductive isolation part with plasma, the part of the first conductive isolation part that does not cover the conductive part will bend towards the side close to the front film layer and at least cover part of the side surface of the conductive part; by step S03, the sizes of the first conductive isolation part and the conductive part can be set so that before performing step S04, the size of the part of the first conductive isolation part that does not cover the conductive part (i.e., the part of the first conductive isolation part extending beyond the conductive part) is large enough, so that after performing step S04, the part of the first conductive isolation part that does not cover the conductive part can cover the entire side surface of the conductive part.

[0061] The preparation method of the above conductive structure does not add an additional lithography process, and the process flow is simple, which is beneficial to reducing costs. By performing steps S01 - S04, a conductive structure as shown in Figure 1 can be obtained. Referring to Figure 5 shown, the conductive structure includes a conductive part 10 and a first conductive isolation part 11 arranged in a stacked manner; the first conductive isolation part 11 covers the surface of the conductive part 10 close to the first conductive isolation part ( Figure 5 the upper surface shown), and also at least covers part of the side surface of the conductive part 10. Figure 5 Taking the example where the first conductive isolation part covers the surface of the conductive part close to the first conductive isolation part and also covers the entire side surface of the conductive part for illustration.

[0062] In the conductive structure formed by the above preparation method, on the one hand, the surface of the conductive part close to the first conductive isolation part is covered by the first conductive isolation part, thus preventing water vapor from entering the conductive part through the side of the conductive part close to the first conductive isolation part, thereby improving the oxidation resistance of the conductive structure; on the other hand, at least part of the exposed side surface of the conductive part is covered by the first conductive isolation part, thus greatly reducing the corrosion problem caused by water vapor entering the conductive part through the side surface of the conductive part, thereby further improving the oxidation resistance and corrosion resistance of the conductive structure. Applying this conductive structure to products can greatly improve the performance and quality of the products.

[0063] It should be noted that the conductive structure formed by the above preparation method can be applied to form the gate and / or source-drain electrodes of a transistor, or can also be applied to form wiring such as gate lines (Gate lines), data lines (Data lines), or clock signal lines (Clock lines) in a display panel; of course, it can also be other application scenarios, which will not be listed one by one here.

[0064] Optionally, in order to further improve the oxidation resistance and stability of the conductive structure, the oxidation resistance of the material of the first conductive isolation part is greater than that of the material of the conductive part, so as to better protect the conductive part and prevent it from being oxidized.

[0065] Further optionally, the material of the first conductive isolation part includes any one or any combination of molybdenum, niobium, nickel, and titanium, and the material of the conductive part includes copper or aluminum.

[0066] Compared with any one or any combination of molybdenum, niobium, nickel, and titanium, copper and aluminum are more easily oxidized by water vapor and corroded.

[0067] Exemplarily, the material of the first conductive isolation part may include molybdenum or a molybdenum-niobium alloy; in order to obtain better conductivity, the material of the conductive part may include copper.

[0068] Optionally, in order to further remove the second part to be etched completely without affecting the first conductive isolation part, when the material of the conductive part includes copper and the material of the first conductive isolation part includes a molybdenum-niobium alloy, the first etching solution includes hydrogen peroxide and the second etching solution includes nitric acid.

[0069] In the first etching solution of the hydrogen peroxide system, the potentials of the molybdenum-niobium alloy and copper are not much different, and the etching rates of the two by hydrogen peroxide are about the same. Therefore, in step S02, the first part to be etched and the third part to be etched can be well removed. In the second etching solution of the nitric acid system, the potential of copper is much smaller than that of the molybdenum-niobium alloy, and the etching rate of copper by nitric acid is much greater than the etching rate of the molybdenum-niobium alloy by nitric acid. Therefore, in step S03, the second part to be etched is removed, while the first conductive isolation part is hardly etched.

[0070] The above first etching solution and second etching solution may also include additives to control the etching rate and the like.

[0071] Optionally, 1 < the ratio of the etching rate of the second part to be etched by the second etching solution to the etching rate of the first conductive isolation part by the second etching solution < 1000, that is, 1 < the selectivity of the second etching solution < 1000. The specific value needs to be determined according to the material. Exemplarily, this ratio may be 5, 10, 15, 20, 40, 60, 100, 200, 400, 600, or 800, etc.

[0072] According to the existing materials, the selectivity of the second etching solution can be selected as 10 or 20. Of course, other values are also possible and will not be listed one by one here. The higher the selectivity of the second etching solution, the higher the etching rate of the second part to be etched by the second etching solution compared to the first conductive isolation part. Then, in step S03, the second part to be etched is removed more cleanly, which is beneficial to the subsequent steps and has less impact on the first conductive isolation part.

[0073] Reference Figure 4 As shown, the ratio of the thickness H1 of the first conductive isolation part 11 in the direction perpendicular to the front film layer 3 to the thickness H2 of the conductive part 10 in the direction perpendicular to the front film layer 3 needs to be set within a reasonable range. If the ratio is too small, in step S04, as Figure 13 shown, the part 110 of the first conductive isolation part 11 that does not cover the conductive part 10 is likely to break, which is not conducive to covering all the sides of the conductive part; if the ratio is too large, the bombardment difficulty is high, which is not conducive to bending. After in-depth research, optionally, 1 / 20 < the ratio of the thickness of the first conductive isolation part in the direction perpendicular to the front film layer to the thickness of the conductive part in the direction perpendicular to the front film layer < 1 / 2. Then, in step S04, the first conductive isolation part is not easy to break, and at the same time, it can ensure that as many sides of the conductive part as possible are covered.

[0074] In one or more embodiments, S04. Bombarding the first conductive isolation part with plasma includes:

[0075] S04’. At a preset temperature, bombarding the first conductive isolation part with nitrogen plasma, where 250°C < preset temperature < 400°C.

[0076] At the above preset temperature, it is beneficial to the bending and covering of the first conductive isolation part. The preset temperature can be 260°C, 280°C, 300°C, 340°C, 360°C or 380°C, etc.

[0077] In one or more embodiments, in order to prevent water vapor from entering the conductive part from the side of the conductive part close to the front film layer, thereby further improving the oxidation resistance of the conductive structure, before S01. Forming a conductive thin film on the front film layer and a first conductive isolation thin film covering the conductive thin film, the preparation method of the conductive structure further includes:

[0078] S05. Reference Figure 7 As shown, forming a second conductive isolation thin film 4 on the front film layer 3, where the second conductive isolation thin film 4 includes a fourth etching part 5 and a second conductive isolation part 6, and the fourth etching part 5 surrounds the second conductive isolation part 6.

[0079] The specific method of forming the second conductive thin film is not limited. By way of example, methods such as spin coating, magnetron sputtering or chemical vapor deposition can be used for preparation. In the above second conductive thin film, the materials of the fourth etching part and the second conductive isolation part are the same.

[0080] S01. Forming a conductive thin film on the front film layer and a first conductive isolation thin film covering the conductive thin film includes:

[0081] S01’. Reference Figure 8As shown, a conductive thin film 2 is formed on a second conductive isolation thin film 4, and a first conductive isolation thin film 1 covering the conductive thin film 2, wherein the orthographic projection of the conductive portion on the front film layer is located within the orthographic projection of the second conductive isolation portion on the front film layer.

[0082] S02. Wet etching the first to-be-etched portion and the third to-be-etched portion with a first etching solution includes:

[0083] S02'. Wet etching the first to-be-etched portion, the third to-be-etched portion, and the fourth to-be-etched portion with a first etching solution to remove Figure 8 the shown first to-be-etched portion 7, third to-be-etched portion 9, and fourth to-be-etched portion 5, obtaining a structure as Figure 9 shown.

[0084] Next, perform step S03. Wet etching the second to-be-etched portion with a second etching solution to remove Figure 9 the shown second to-be-etched portion 8, thereby obtaining a structure as Figure 10 shown. Then, remove the mask plate 26 to obtain a structure as Figure 11 shown. Finally, perform step S04. Bombard the first conductive isolation portion with Figure 11 plasma, such that at least a part of the side surface of the conductive portion 10 is covered by the part 110 of the first conductive isolation portion 11 in that does not cover the conductive portion 10, forming a conductive structure as Figure 11 shown. Figure 12 shown. Figure 12 In , an example is shown where the first conductive isolation portion 11 covers all side surfaces of the conductive portion 10.

[0085] In the conductive structure formed by the above preparation method, referring to Figure 12 shown, the conductive structure includes a second conductive isolation portion 6, a conductive portion 10, and a first conductive isolation portion 11 arranged in a stacked manner; the surface of the conductive portion 10 close to the front film layer (i.e., the lower surface of the conductive portion as Figure 12 shown) is wrapped by the second conductive isolation portion 6, thereby preventing water vapor from entering the conductive portion through the side of the conductive portion close to the front film layer, and further improving the oxidation resistance of the conductive structure. In addition, when the material of the conductive portion includes copper, the adhesion between the conductive portion and the front film layer (e.g., gate insulating layer) is poor, and the conductive portion is likely to fall off from the front film layer. By providing the second conductive isolation portion, the adhesion with the front film layer can be enhanced, the problem of easy detachment and poor stability of the conductive portion can be solved, and at the same time, the outward diffusion of the material of the conductive portion can be blocked, avoiding affecting related products.

[0086] Optionally, the material of the second conductive isolation part is the same as that of the first conductive isolation part, which is beneficial to the selection of the first etching solution and the second etching solution and is convenient for cost reduction. For example, the material of the second conductive isolation part may include any one or any combination of molybdenum, niobium, nickel, and titanium.

[0087] An embodiment of the present invention further provides a method for manufacturing a transistor, including:

[0088] S11. Provide a substrate.

[0089] The material of the substrate is not limited here. For example, the material may include rigid materials such as glass, or may also include flexible materials such as polyimide.

[0090] S12. Form a gate and / or source-drain electrodes on the substrate by using the manufacturing method of the above-mentioned conductive structure.

[0091] The transistor includes a gate, source-drain electrodes, and an active layer. Here, the source-drain electrodes include a source electrode and a drain electrode. Step S12 includes three cases:

[0092] The first case: Form a gate 23 as shown in Figure 17 on the substrate by using the manufacturing method of the above-mentioned conductive structure.

[0093] Refer to Figure 17 As shown, the gate 23 includes a second conductive isolation part 12, a conductive part 10, and a first conductive isolation part 11 arranged in a stacked manner. The first conductive isolation part 11 covers the surface of the conductive part 10 close to the first conductive isolation part 11 (that is, Figure 17 the upper surface of the conductive part 10) and at least covers a part of the side surface of the conductive part 10. In the transistor formed by this method, the gate is not easily corroded by water vapor, has strong oxidation resistance and corrosion resistance, and the product performance is good. Figure 17 Taking the first conductive isolation part 11 covering the upper surface and all side surfaces of the conductive part 10 as an example for illustration.

[0094] The second case: Form source-drain electrodes (including a source electrode 25 and a drain electrode 26) as shown in Figure 15 on the substrate by using the manufacturing method of the above-mentioned conductive structure.

[0095] Refer to Figure 15 As shown, the source electrode 25 and the drain electrode 26 respectively include a second conductive isolation part 12, a conductive part 10, and a first conductive isolation part 11 arranged in a stacked manner. The first conductive isolation part 11 covers the surface of the conductive part 10 close to the first conductive isolation part 11 (that is, Figure 15 the upper surface of the conductive part 10) and at least covers a part of the side surface of the conductive part 10. Figure 15 Taking the first conductive isolation part 11 covering the upper surface and all side surfaces of the conductive part 10 as an example for illustration.

[0096] In the transistor formed by this method, referring to Figure 15 as shown, at least part of the side surface of the conductive portion 10 is covered by the first conductive isolation portion 11, and there is no direct contact with the passivation layer 27, so it is not easily invaded by water vapor, thereby reducing the probability of corrosion, and at the same time preventing the material of the conductive portion from diffusing to the active layer; in the transistor formed by this method, the source and drain are not easily corroded by water vapor, have strong oxidation resistance and corrosion resistance, and the product performance is good.

[0097] Thirdly, the preparation method using the above conductive structure forms a gate 23 and source and drain (including source 25 and drain 26) as shown in Figure 16 the figure.

[0098] Referring to Figure 16 as shown, the gate 23, the source 25 and the drain 26 respectively include a second conductive isolation portion 12, a conductive portion 10 and a first conductive isolation portion 11 which are stacked. The first conductive isolation portion 11 covers the surface of the conductive portion 10 close to the first conductive isolation portion 11 (i.e., Figure 16 the upper surface of the conductive portion 10), and also covers at least part of the side surface of the conductive portion 10. In the transistor formed by this method, the gate and the source and drain are not easily corroded by water vapor, have strong oxidation resistance and corrosion resistance, and the product performance is good.

[0099] The type of the above transistor is not limited. For example, the transistor can be a back-channel etched (BCE) transistor as shown in Figure 15 and Figure 16 the figure; or, the transistor can also be an etch-stop layer (ESL) transistor as shown in Figure 17 the figure, which is not limited here.

[0100] In addition, the transistors are divided into two categories according to the positional relationship of the electrodes. One category is that the gate is located below the source and drain, and this type is called a bottom-gate thin-film transistor; the other category is that the gate is located above the source and drain, and this type is called a top-gate thin-film transistor. This is not limited here, Figure 15 and Figure 16 taking the bottom-gate transistor as an example for illustration, Figure 17 taking the top-gate transistor as an example for illustration.

[0101] The material of the active layer of the above transistor is not limited. For example, the material of the active layer may include oxide semiconductor materials such as IGZO (Indium Gallium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), and IZO (Indium Zinc Oxide), or may also include polysilicon semiconductor materials such as LTPS (Low Temperature Poly-silicon), or may further include amorphous silicon semiconductor materials, which are not limited here.

[0102] Next, taking the Figure 15 shown transistor as an example, its manufacturing process will be described in detail. Referring to Figure 15 shown, in this transistor, the source electrode 25 and the drain electrode 26 respectively include a second conductive isolation part 12, a conductive part 10, and a first conductive isolation part 11 which are stacked. The first conductive isolation part 11 covers the surface of the conductive part 10 close to the first conductive isolation part 11 (i.e., Figure 15 the upper surface of the conductive part 10) and also covers all the side surfaces of the conductive part 10.

[0103] The manufacturing method of this transistor includes:

[0104] S21. Provide a substrate 20.

[0105] The material of the substrate is not limited here. For example, the material may include rigid materials such as glass, or may also include flexible materials such as polyimide.

[0106] S22. Sequentially form a gate 23, a gate insulating layer 22, and an active layer 21 on the substrate 20.

[0107] The material of the gate may include metals, such as copper or aluminum. The material of the gate insulating layer includes silicon nitride or silicon oxide. The material of the active layer includes oxide semiconductor materials, such as IGZO, etc.

[0108] S23. Form the source electrode 25 and the drain electrode 26. For the specific manufacturing method, refer to the aforementioned method for forming the conductive structure, which will not be elaborated here.

[0109] S24. Form a passivation layer 27, wherein the passivation layer 27 covers the source electrode 25, the drain electrode 26, and the exposed part of the active layer 21.

[0110] The material of this passivation layer may include silicon nitride or silicon oxide.

[0111] It should be noted that in step S23, the step of plasma bombardment and step S24 can be completed in two steps in the same PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment, and can be completed in the same process without adding extra processes.

[0112] In the above method for manufacturing a transistor, no additional lithography process is added, and the process flow is simple, which is beneficial to cost reduction. In the formed transistor as shown in Figure 15 , the source electrode and the drain electrode respectively include a three-layer stacked structure. The upper surface, lower surface, and all side surfaces of the conductive part are wrapped by the first conductive isolation part and the second conductive isolation part. On the one hand, it avoids the direct contact between the side surface of the conductive part and the passivation layer, and prevents water vapor from entering from the side surface of the conductive part, thereby avoiding the corrosion of the conductive part. On the other hand, it avoids the direct contact between the lower surface of the conductive part and the active layer, thereby preventing the material of the conductive part from diffusing to the active layer, and further avoiding affecting the performance of the active layer. On the other hand, it avoids the direct contact between the lower surface of the conductive part and the gate insulating layer, thereby preventing water vapor from entering from the lower surface of the conductive part, further improving the oxidation resistance of the conductive structure, and at the same time improving the adhesion force with the gate insulating layer, and further avoiding the problem that the source electrode and the drain electrode are easily peeled off.

[0113] An embodiment of the present invention further provides a conductive structure. Referring to Figure 5 , the conductive structure includes: a conductive part 10 and a first conductive isolation part 11 which are stacked; the first conductive isolation part 11 covers the surface of the conductive part 10 close to the first conductive isolation part 11, and also covers at least part of the side surface of the conductive part 10. Figure 5 In

[0114] , an example is shown in which the first conductive isolation part 11 covers all the side surfaces of the conductive part 10.

[0115] When the above conductive structure is used as a trace in a display panel, such as: the gate line and the data line of the display panel; at the place where the gate line and the data line intersect, since at least part of the side surfaces of the conductive parts in the gate line and the data line are covered by the first conductive isolation part, it can greatly avoid water vapor from invading the side surfaces of the conductive parts in a high-temperature, high-pressure or high-humidity environment, thereby preventing the corrosion of the conductive parts, and further solving the problem of short circuit of the gate line and the data line caused by the corrosion of the conductive parts, and improving the reliability of the product.

[0116] In the conductive structure provided by the present application, on the one hand, the surface of the conductive part close to the first conductive isolation part is covered by the first conductive isolation part, thereby preventing water vapor from entering the conductive part from the side close to the first conductive isolation part, and thus improving the oxidation resistance of the conductive structure; on the other hand, at least part of the exposed side surface of the conductive part is covered by the first conductive isolation part, thereby greatly reducing the corrosion problem caused by water vapor entering the conductive part through the side surface of the conductive part, and thus further improving the oxidation resistance and corrosion resistance of the conductive structure. Applying this conductive structure to a product can greatly improve the performance and quality of the product.

[0117] In order to further improve the oxidation resistance and stability of the conductive structure, the oxidation resistance of the material of the first conductive isolation part is greater than that of the material of the conductive part, so as to better protect the conductive part and prevent it from being oxidized.

[0118] Further optionally, the material of the first conductive isolation part includes any one or any combination of molybdenum, niobium, nickel, and titanium, and the material of the conductive part includes copper or aluminum.

[0119] Compared with any one or any combination of molybdenum, niobium, nickel, and titanium, copper and aluminum are more easily oxidized by water vapor and corroded.

[0120] Exemplarily, the material of the first conductive isolation part may include molybdenum or a molybdenum-niobium alloy; in order to obtain better conductivity, the material of the conductive part may include copper.

[0121] Reference Figure 4 As shown, the ratio of the thickness H1 of the first conductive isolation part 11 in the direction perpendicular to the front film layer 3 to the thickness H2 of the conductive part 10 in the direction perpendicular to the front film layer 3 needs to be set within a reasonable range. If the ratio is too small, it is easy to break in the aforementioned step S04, which is not conducive to covering all the side surfaces of the conductive part; if the ratio is too large, the bombardment difficulty is high, which is not conducive to bending. After in-depth research, optionally, 1 / 20 < the ratio of the thickness of the first conductive isolation part in the direction perpendicular to the front film layer to the thickness of the conductive part in the direction perpendicular to the front film layer < 1 / 2, then in the aforementioned step S04, the first conductive isolation part is not easy to break, and at the same time, it can ensure that as many side surfaces of the conductive part as possible are covered.

[0122] Optionally, in order to prevent water vapor from entering the conductive part from the side close to the front film layer, thereby further improving the oxidation resistance of the conductive structure, reference Figure 12 As shown, the conductive structure further includes a second conductive isolation part 6, and the second conductive isolation part 6 is arranged on the side of the conductive part 10 away from the first conductive isolation part 11; the whole formed by the first conductive isolation part 11 and the second conductive isolation part 6 covers all the surfaces of the conductive part 6.

[0123] The material of the second conductive isolation part is the same as that of the first conductive isolation part, which is beneficial to the selection of the first etching solution and the second etching solution and is convenient for cost reduction. For example, the material of the second conductive isolation part may include any one or any combination of molybdenum, niobium, nickel, and titanium.

[0124] Optionally, in order to further improve the oxidation resistance and stability of the conductive structure, the oxidation resistance of the material of the first conductive isolation part and the oxidation resistance of the material of the second conductive isolation part are respectively greater than the oxidation resistance of the material of the conductive part.

[0125] Another embodiment of the present invention further provides a transistor, including: a gate and source-drain electrodes, and the gate and / or the source-drain electrodes have the same structure as the above-mentioned conductive structure.

[0126] This transistor includes three cases:

[0127] First, the transistor includes: a gate and source-drain electrodes, and the gate has the same structure as the above-mentioned conductive structure. Refer to Figure 17 As shown, the gate 23 includes a second conductive isolation part 12, a conductive part 10, and a first conductive isolation part 11 arranged in a stacked manner. The first conductive isolation part 11 covers the surface of the conductive part 10 close to the first conductive isolation part 11 (that is, Figure 17 the upper surface of the conductive part 10) and also at least covers a part of the side surface of the conductive part 10. In this transistor, the gate is not easily corroded by water vapor, has strong oxidation resistance and corrosion resistance, and the product performance is good. Figure 17 Taking the first conductive isolation part 11 covering the upper surface and all the side surfaces of the conductive part 10 as an example for illustration.

[0128] Second, the transistor includes: a gate and source-drain electrodes, and the source-drain electrodes have the same structure as the above-mentioned conductive structure. Refer to Figure 15 As shown, the source electrode 25 and the drain electrode 26 respectively include a second conductive isolation part 12, a conductive part 10, and a first conductive isolation part 11 arranged in a stacked manner. The first conductive isolation part 11 covers the surface of the conductive part 10 close to the first conductive isolation part 11 (that is, Figure 15 the upper surface of the conductive part 10) and also at least covers a part of the side surface of the conductive part 10. Figure 15 Taking the first conductive isolation part 11 covering the upper surface and all the side surfaces of the conductive part 10 as an example for illustration.

[0129] Figure 14 For another transistor, refer to Figure 14As shown, the source electrode 25 and the drain electrode 26 respectively include a second conductive isolation layer 32, a conductive layer 30, and a first conductive isolation layer 31 that are stacked. The side surface of the conductive layer 30 is exposed and is in direct contact with the passivation layer 27. Corrosion is likely to occur in the side region B of the conductive layer 30 of this transistor, and the material of the corroded conductive layer is likely to diffuse to the active layer 21, thereby contaminating and affecting the performance of the active layer. Compared with Figure 14 the transistor of Figure 15 in the transistor provided by this application, as shown in

[0130] Thirdly, the transistor includes: a gate electrode and source-drain electrodes, and the gate electrode and the source-drain electrodes have the same structure as the above-described conductive structure. As shown in Figure 16 the gate electrode 23, the source electrode 25, and the drain electrode 26 respectively include a second conductive isolation portion 12, a conductive portion 10, and a first conductive isolation portion 11 that are stacked. The first conductive isolation portion 11 covers the surface of the conductive portion 10 close to the first conductive isolation portion 11 (i.e., Figure 16 the upper surface of the conductive portion 10) and at least covers a part of the side surface of the conductive portion 10. In this transistor, the gate electrode and the source-drain electrodes are not easily corroded by water vapor, have strong oxidation resistance and corrosion resistance, and the product performance is good. Figure 16 Taking the example where the first conductive isolation portion 11 covers the upper surface and all side surfaces of the conductive portion 10 for illustration.

[0131] The type of the above transistor is not limited. For example, the transistor can be a back-channel etched (BCE) transistor as shown in Figure 15 and Figure 16 . At this time, the transistor can also include a substrate 20, a gate insulating layer 22, an active layer 21, and a passivation layer 27 as shown in Figure 15 and Figure 16 ; or, the transistor can also be an etch stop layer (ESL) transistor as shown in Figure 17 . At this time, the transistor can also include a substrate 20, a gate insulating layer 22, a buffer layer 24, an active layer 21, and a passivation layer 27 as shown in Figure 17 , which is not limited here.

[0132] In addition, the transistors are classified into two categories according to the positional relationship of the electrodes. One category is that the gate electrode is located below the source electrode and the drain electrode, and this type is called a bottom-gate thin-film transistor; the other category is that the gate electrode is located above the source electrode and the drain electrode, and this type is called a top-gate thin-film transistor. This is not limited here, Figure 15 andFigure 16 Taking a bottom-gate transistor as an example, Figure 17 A top-gate transistor is taken as an example for illustration.

[0133] The material of the active layer of the above-mentioned transistor is not limited. For example, the material of the active layer may include oxide semiconductor materials such as IGZO (Indium Gallium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), IZO (Indium Zinc Oxide), or may also include polycrystalline silicon semiconductor materials such as LTPS (Low Temperature Poly-silicon), or may also include amorphous silicon semiconductor materials, which are not limited here.

[0134] An embodiment of the present invention further provides a display panel, comprising: the above-mentioned transistor.

[0135] The display device can be a rigid display panel or a flexible display panel (i.e., bendable or foldable); its type can be a TN (Twisted Nematic) type, VA (Vertical Alignment) type, IPS (In-Plane Switching) type, or ADS (Advanced Super Dimension Switch) type liquid crystal display panel, or an OLED (Organic Light-Emitting Diode) display panel, as well as any product or component with display function including these display panels, such as a television, a digital camera, a mobile phone, and a tablet computer. The display panel has good performance and high quality.

[0136] Of course, the display panel may also include multiple routing lines, such as: gate lines, data lines or clock signal lines, etc. The structure of these routing lines may also be the same as the structure of the aforementioned conductive structure. When the aforementioned conductive structure is used as the routing lines of the display panel, for example: the gate lines and data lines of the display panel; at the intersection of the gate lines and the data lines, since at least part of the side surfaces of the conductive parts in the gate lines and the data lines are covered by the first conductive isolation part, it is possible to largely avoid water vapor from invading the side surfaces of the conductive parts in a high temperature, high pressure or high humidity environment, thereby preventing corrosion of the conductive parts, thereby solving the problem of short circuits of the gate lines and the data lines caused by corrosion of the conductive parts, and improving the reliability of the product.

[0137] As used herein, "one embodiment", "an embodiment", or "one or more embodiments" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. In addition, note that examples of the phrase "in one embodiment" herein do not necessarily all refer to the same embodiment.

[0138] In the specification provided herein, a large number of specific details are set forth. However, it can be understood that embodiments of the present application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0139] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application and are not intended to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for preparing a conductive structure, characterized in that, Including: Forming a conductive thin film on a front film layer and a first conductive isolation thin film covering the conductive thin film, wherein the conductive thin film includes a first to-be-etched portion, a second to-be-etched portion, and a conductive portion, the first to-be-etched portion surrounds the second to-be-etched portion, and the second to-be-etched portion surrounds the conductive portion; the first conductive isolation thin film includes a third to-be-etched portion and a first conductive isolation portion, the third to-be-etched portion surrounds the first conductive isolation portion; the orthographic projection of the conductive portion on the front film layer is within the orthographic projection of the first conductive isolation portion on the front film layer; Performing wet etching on the first to-be-etched portion and the third to-be-etched portion using a first etching solution to remove the first to-be-etched portion and the third to-be-etched portion; Performing wet etching on the second to-be-etched portion using a second etching solution to remove the second to-be-etched portion, wherein the etching rate of the second to-be-etched portion by the second etching solution is greater than the etching rate of the first conductive isolation portion by the second etching solution; Bombarding the first conductive isolation portion with plasma so that the portion of the first conductive isolation portion that does not cover the conductive portion covers at least a partial side surface of the conductive portion to form the conductive structure.

2. The preparation method according to claim 1, wherein The oxidation resistance of the material of the first conductive isolation portion is greater than the oxidation resistance of the material of the conductive portion.

3. The preparation method according to claim 2, wherein The material of the first conductive isolation portion includes any one or any combination of molybdenum, niobium, nickel, and titanium, and the material of the conductive portion includes copper or aluminum.

4. The preparation method according to claim 3, characterized in that, When the material of the conductive portion includes copper and the material of the first conductive isolation portion includes a molybdenum-niobium alloy, the first etching solution includes hydrogen peroxide, and the second etching solution includes nitric acid.

5. The preparation method according to claim 1, wherein, 1 < the ratio of the etching rate of the second to-be-etched portion by the second etching solution to the etching rate of the first conductive isolation portion by the second etching solution < 1000.

6. The preparation method according to claim 1, characterized in that, 1 / 20 < the ratio of the thickness of the first conductive isolation portion in the direction perpendicular to the front film layer to the thickness of the conductive portion in the direction perpendicular to the front film layer < 1 / 2.

7. The preparation method according to claim 1, wherein The bombarding the first conductive isolation portion with plasma includes: Bombarding the first conductive isolation portion with nitrogen plasma at a preset temperature, wherein 250°C < the preset temperature < 400°C.

8. The preparation method according to claim 1, wherein, Before forming the conductive thin film on the front film layer and the first conductive isolation thin film covering the conductive thin film, the method further includes: Forming a second conductive isolation thin film on the front film layer, wherein the second conductive isolation thin film includes a fourth to-be-etched portion and a second conductive isolation portion, and the fourth to-be-etched portion surrounds the second conductive isolation portion; The forming the conductive thin film on the front film layer and the first conductive isolation thin film covering the conductive thin film includes: Forming the conductive thin film on the second conductive isolation thin film and the first conductive isolation thin film covering the conductive thin film, wherein the orthographic projection of the conductive portion on the front film layer is within the orthographic projection of the second conductive isolation portion on the front film layer; The performing wet etching on the first to-be-etched portion and the third to-be-etched portion using the first etching solution includes: Wet etching is performed on the first to-be-etched portion, the third to-be-etched portion, and the fourth to-be-etched portion using a first etching solution to remove the first to-be-etched portion, the third to-be-etched portion, and the fourth to-be-etched portion.

9. The preparation method according to claim 8, characterized in that, The material of the second conductive isolation portion is the same as that of the first conductive isolation portion.

10. A method for manufacturing a transistor, characterized in that, Comprising: Providing a substrate; Forming a gate and / or source / drain on the substrate by using the method according to any one of claims 1-9.

11. A conductive structure, characterized in that, The conductive structure is prepared by the preparation method according to any one of claims 1-9, and includes: a conductive portion and a first conductive isolation portion arranged in a stacked manner; The first conductive isolation portion covers the surface of the conductive portion close to the first conductive isolation portion and at least covers a part of the side surface of the conductive portion.

12. The conductive structure according to claim 11, wherein The conductive structure further includes a second conductive isolation portion, and the second conductive isolation portion is disposed on a side of the conductive portion away from the first conductive isolation portion; The whole formed by the first conductive isolation portion and the second conductive isolation portion covers all surfaces of the conductive portion.

13. The conductive structure according to claim 12, characterized in that, The oxidation resistance of the material of the first conductive isolation portion and the oxidation resistance of the material of the second conductive isolation portion are respectively greater than the oxidation resistance of the material of the conductive portion.

14. A transistor, characterized in that, Comprising: A gate and source / drain, and the gate and / or the source / drain have the same structure as the conductive structure according to any one of claims 11-13.

15. A display panel, characterized in that, Comprising: The transistor according to claim 14.

Images