Power semiconductor module and power conversion device

Abstract

A power semiconductor module (1) has a power semiconductor assembly (2) and a heat transfer member (40). The power semiconductor assembly (2) includes a circuit board (10) and a housing (20). The circuit board (10) includes an insulating board (11). A second mounting surface (15) on which the heat transfer member (40) is mounted is recessed with respect to a first mounting surface (25) on which a heat sink (50) is mounted. A maximum setback distance (L1) of the second mounting surface (15) from the first mounting surface (25) is smaller than an original thickness (t1) of the heat transfer member (40) and is larger than a lower limit thickness (t2) of the heat transfer member (40).

Description

TECHNICAL FIELD

[0001] The present application relates to a power semiconductor module and a power conversion device. BACKGROUND

[0002] Japanese Patent Application Publication No. 11-330328 discloses a semiconductor module having a chip mounting substrate, a peripheral housing, a semiconductor element, and a heat sink. The semiconductor element is composed of an IGBT chip. The chip mounting substrate includes a ceramic substrate and a copper thin plate joined to the ceramic substrate. The chip mounting substrate is in close contact with the heat sink via a thermally conductive grease. The peripheral housing includes a side wall portion and a protruding portion that protrudes from an upper end of the side wall portion to above the chip mounting substrate. The side wall portion of the peripheral housing is mounted to the heat sink. The protruding portion of the peripheral housing is in contact with a peripheral portion of the chip mounting substrate. SUMMARY

[0003] However, in the case of the power module disclosed in Japanese Patent Application Publication No. 11-330328, the ceramic substrate is sometimes broken when the heat sink is mounted to the chip mounting substrate and the peripheral housing. The present application has been made in view of the above problem, and has an object to provide a power semiconductor module and a power conversion device capable of preventing breakage of an insulating substrate.

[0004] The power semiconductor module of the present application has a power semiconductor assembly and a heat transfer member. The power semiconductor assembly includes a circuit substrate, a power semiconductor element, and a housing. The circuit substrate includes an insulating substrate having a first main surface and a conductive circuit pattern provided on the first main surface of the insulating substrate. The power semiconductor element is mounted on the conductive circuit pattern. The housing includes a cylindrical body and a protruding portion. The cylindrical body houses the power semiconductor element and the conductive circuit pattern. The protruding portion protrudes from the cylindrical body toward an inner side of the cylindrical body and is in direct or indirect contact with the first main surface of the insulating substrate or the conductive circuit pattern. The power semiconductor assembly has a first mounting surface on which a heat sink is mounted. The circuit substrate has a second mounting surface on which the heat transfer member is mounted. The first mounting surface and the second mounting surface are located on a side away from the power semiconductor element with respect to the insulating substrate. The second mounting surface is recessed with respect to the first mounting surface in a stacking direction of the conductive circuit pattern and the insulating substrate. A maximum setback distance of the second mounting surface from the first mounting surface is smaller than an original thickness of the heat transfer member when the heat transfer member is not pressed, and is larger than a lower limit thickness of the heat transfer member when the heat transfer member is pressed in a thickness direction of the heat transfer member.

[0005] The power conversion device of the present application has a main conversion circuit and a control circuit. The main conversion circuit is configured to have the power semiconductor module of the present application, and the main conversion circuit converts input power and outputs the same. The control circuit is configured to output a control signal for controlling the main conversion circuit to the main conversion circuit.

[0006] The above and other objects, features, solutions, and advantages of the present invention will become clear from the following detailed description relating to the invention, which is taken in conjunction with the accompanying drawings. Attached Figure Description

[0007] Figure 1 This is a schematic cross-sectional view of the power semiconductor module according to Embodiment 1.

[0008] Figure 2 This is a schematic diagram of the heat transfer components.

[0009] Figure 3 This is a schematic cross-sectional view of a power semiconductor module of a variation of Embodiment 1.

[0010] Figure 4 This is a schematic cross-sectional view showing a step of a first example of the manufacturing method of the power semiconductor module according to Embodiment 1.

[0011] Figure 5 This is a schematic cross-sectional view of a step in a second example of the manufacturing method of the power semiconductor module according to Embodiment 1.

[0012] Figure 6 This is the second example illustrating the manufacturing method of the power semiconductor module according to Embodiment 1. Figure 5 A schematic cross-sectional view of the next process in the process shown.

[0013] Figure 7 This is a schematic cross-sectional view of the power semiconductor module in Embodiment 2.

[0014] Figure 8 This is a schematic cross-sectional view of a power semiconductor module in a modified embodiment of implementation 2.

[0015] Figure 9 This is a schematic cross-sectional view of the power semiconductor module in Embodiment 3.

[0016] Figure 10 This is a schematic bottom view of the power semiconductor module in Embodiment 4.

[0017] Figure 11 This is a schematic cross-sectional view of the power semiconductor module in Embodiment 4.

[0018] Figure 12 This is a schematic cross-sectional view of the power semiconductor module of a variation of Embodiment 4.

[0019] Figure 13 This is a schematic bottom view of the power semiconductor module in Embodiment 5.

[0020] Figure 14 This is a schematic bottom view of the power semiconductor module of a variation of Embodiment 5.

[0021] Figure 15 This is a schematic cross-sectional view of the power semiconductor module in Embodiment 6.

[0022] Figure 16 This is a schematic cross-sectional view of a power semiconductor module of a modified embodiment 6.

[0023] Figure 17 This is a schematic cross-sectional view of the power semiconductor module in Embodiment 7.

[0024] Figure 18 This is a schematic cross-sectional view of the power semiconductor module of a modified embodiment 7.

[0025] Figure 19 This is a block diagram illustrating the structure of the power conversion system according to Embodiment 8. Detailed Implementation

[0026] Hereinafter, embodiments of the present invention will be described. Furthermore, the same reference numerals will be used to denote the same structures, and their descriptions will not be repeated.

[0027] Implementation method 1.

[0028] Reference Figure 1 and Figure 2 The power semiconductor module 1 of Embodiment 1 will be described below. The power semiconductor module 1 includes a power semiconductor component 2 and a heat transfer component 40.

[0029] The power semiconductor assembly 2 mainly includes a circuit board 10, power semiconductor elements 18a and 18b, and a housing 20. The power semiconductor assembly 2 may also include a packaging component 35. The power semiconductor assembly 2 may also include a bushing 27.

[0030] The circuit board 10 includes an insulating substrate 11 and a conductive circuit pattern 12. The circuit board 10 may also include a conductive plate 13.

[0031] The insulating substrate 11 has a first main surface 11a, a second main surface 11b opposite to the first main surface 11a, and a side surface 11s connecting the first main surface 11a and the second main surface 11b. The first main surface 11a and the second main surface 11b each extend along a first direction (x-direction) and a second direction (y-direction) perpendicular to the first direction. The first main surface 11a and the second main surface 11b are separated from each other in a third direction (z-direction) perpendicular to the first direction (x-direction) and the second direction (y-direction). The side surface 11s extends along the second direction (y-direction) and the third direction (z-direction). The insulating substrate 11 is, for example, a ceramic substrate. Specifically, the insulating substrate 11 is formed of inorganic ceramic materials such as alumina (Al2O3), aluminum nitride (AlN), silicon nitride (Si3N4), silicon dioxide (SiO2), or boron nitride (BN).

[0032] A conductive circuit pattern 12 is disposed on the first main surface 11a of the insulating substrate 11. The insulating substrate 11 and the conductive circuit pattern 12 are stacked in the third direction (z direction). A conductive plate 13 is disposed on the second main surface 11b of the insulating substrate 11. The insulating substrate 11 and the conductive plate 13 are stacked in the third direction (z direction). The conductive circuit pattern 12 and the conductive plate 13 are formed of a conductive metal material such as copper (Cu) or aluminum (Al).

[0033] Power semiconductor elements 18a and 18b are mounted on the conductive circuit pattern 12. Specifically, the power semiconductor elements 18a and 18b are bonded to the conductive circuit pattern 12 using conductive bonding components 19a and 19b, such as solder or metal particle sintered bodies. The power semiconductor elements 18a and 18b are not particularly limited and are insulated-gate bipolar transistors (IGBTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), or diodes. The power semiconductor elements 18a and 18b are formed primarily of wide-bandgap semiconductor materials such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), or diamond.

[0034] The housing 20 houses power semiconductor elements 18a and 18b and conductive circuit pattern 12. The housing 20 may also house an insulating substrate 11, the sides 11s of which may contact the housing 20. The housing 20 may also house a conductive plate 13. The housing 20 is formed, for example, of an insulating resin such as polyphenylene sulfide (PPS) resin, polyethylene terephthalate (PET) resin, epoxy resin, polyimide resin, or acrylic resin.

[0035] Specifically, the housing 20 includes a cylindrical body 21, a flange 22, and a protrusion 23. The cylindrical body 21 houses power semiconductor elements 18a and 18b and a conductive circuit pattern 12. The cylindrical body 21 may also house a conductive plate 13. The cylindrical body 21 may also house at least a portion of a heat transfer component 40.

[0036] The flange 22 is connected to one end of the cylinder 21 near the heat transfer component 40. The flange 22 extends from one end of the cylinder 21 toward the outside of the cylinder 21. A fastening component 52 for screws or bolts is provided in the power semiconductor assembly 2 (see reference). Figure 3 The hole 29 is inserted into and reaches the first mounting surface 25. At least a portion of the hole 29 is provided in the housing 20. Specifically, a through hole 28 is provided in the housing 20 (flange 22). In this embodiment, the hole 29 is a through hole 28.

[0037] The power semiconductor assembly 2 has a fastening component 52 (see reference). Figure 3 To install the radiator 50 (refer to...) Figure 3The first mounting surface 25 is located opposite to the power semiconductor elements 18a and 18b, relative to the insulating substrate 11. Specifically, the housing 20 (flange 22) has a back surface 24 that is away from the insulating substrate 11 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. In this embodiment, the back surface 24 of the housing 20 (flange 22) is the first mounting surface 25.

[0038] The protrusion 23 is connected to the other end of the cylinder 21 near the power semiconductor elements 18a and 18b. The protrusion 23 extends from the other end of the cylinder 21 toward the inside of the cylinder 21. When viewed from above, the protrusion 23 is opposite to the first main surface 11a of the insulating substrate 11 or the conductive circuit pattern 12.

[0039] The protrusion 23 is in direct or indirect contact with the first main surface 11a of the insulating substrate 11 or the conductive circuit pattern 12. In this specification, indirect contact between the protrusion 23 and the first main surface 11a of the insulating substrate 11 or the conductive circuit pattern 12 means that a component (e.g., adhesive 30) that contacts both the protrusion 23 and the first main surface 11a of the insulating substrate 11 or the conductive circuit pattern 12 is sandwiched between the protrusion 23 and the first main surface 11a of the insulating substrate 11 or the conductive circuit pattern 12. For example, the protrusion 23 contacts the first main surface 11a of the insulating substrate 11 via adhesive 30. The protrusion 23 is fixed to the circuit board 10 (e.g., the insulating substrate 11) using an adhesive 30 such as an insulating adhesive.

[0040] The bushing 27 can also be installed in the through hole 28 of the housing 20 (flange 22). The bushing 27 is hollow. The bushing 27 is made of a metal material such as brass. Fastening components 52 such as screws or bolts are inserted into the bushing 27 (see reference). Figure 3 Regarding bushing 27, the radiator 50 (see reference 50) can be secured using fastening component 52. Figure 3 It is more firmly secured to the housing 20 (flange 22).

[0041] The encapsulation component 35 is disposed within the inner space of the housing 20 (cylinder 21). The encapsulation component 35 encapsulates the power semiconductor elements 18a and 18b. The encapsulation component 35 may also encapsulate the conductive circuit pattern 12. The encapsulation component 35 is formed, for example, of an insulating resin such as silicone, epoxy, polyurethane, polyimide, polyamide, or acrylic resin.

[0042] The heat transfer component 40 conducts the heat generated by the power semiconductor elements 18a and 18b to the heat sink 50 with lower thermal resistance. Figure 3The thermal conductivity of the heat transfer component 40 is, for example, greater than or equal to 1.0 W / (m·K). The thermal conductivity of the heat transfer component 40 may also be greater than or equal to 3.0 W / (m·K), greater than or equal to 5.0 W / (m·K), or greater than or equal to 10.0 W / (m·K).

[0043] The heat transfer component 40 is, for example, a thermal interface material (TIM). The TIM can be a non-flowing substance such as a sheet or gel, or a flowing substance such as a grease. The heat transfer component 40 can also be, for example, a thermally conductive sheet comprising graphite sheets or a resin such as epoxy or silicone resin and thermally conductive fillers (e.g., silica fillers, alumina fillers, or aluminum nitride fillers) dispersed within the resin. The heat transfer component 40 can be electrically insulating or electrically conductive.

[0044] The heat transfer component 40 can be deformed by pressing. (Refer to...) Figure 2 The original thickness t1 of the heat transfer component 40 is the thickness of the heat transfer component 40 when it is not pressed. The lower limit thickness t2 of the heat transfer component 40 is the minimum thickness of the heat transfer component 40 when it is pressed along its thickness direction (the third direction (z direction)). For example, if the heat transfer component 40 contains filler, the lower limit thickness t2 is determined by the diameter of the filler. If the heat transfer component 40 does not contain filler, the lower limit thickness t2 is determined by the difference between the original thickness t1 and the thickness obtained by multiplying the original thickness t1 by the allowable compressibility of the heat transfer component 40. The allowable compressibility of the heat transfer component 40 is defined as the ratio of the reduced thickness of the heat transfer component 40 when a pressing force of 0.1 MPa is applied along its thickness direction to the original thickness t1 of the heat transfer component 40.

[0045] The circuit board 10 has a second mounting surface 15 for mounting the heat transfer component 40. The second mounting surface 15 is located on the side opposite to the power semiconductor elements 18a and 18b relative to the insulating substrate 11. Specifically, the conductive plate 13 has the second mounting surface 15. The second mounting surface 15 is the back surface of the conductive plate 13 away from the insulating substrate 11. In this embodiment, the second mounting surface 15 is a flat surface.

[0046] The second mounting surface 15 is recessed toward the insulating substrate 11 relative to the first mounting surface 25 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. The maximum receding distance L1 of the second mounting surface 15 from the first mounting surface 25 is smaller than the original thickness t1 of the heat transfer member 40 when it is not pressed. That is, when the heat transfer member 40 is not pressed, the surface 40a of the heat transfer member 40 away from the insulating substrate 11 protrudes from the first mounting surface 25 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. The maximum receding distance L1 of the second mounting surface 15 from the first mounting surface 25 is larger than the lower limit thickness t2 of the heat transfer member 40 when it is pressed along the thickness direction of the heat transfer member 40. In this embodiment, both the first mounting surface 25 and the second mounting surface 15 are flat surfaces. Therefore, the maximum retraction distance L1 of the second mounting surface 15 from the first mounting surface 25 is determined by the retraction distance of the second mounting surface 15 from the first mounting surface 25.

[0047] Reference Figure 3 The power semiconductor module 1 may also include a heat sink 50. The heat sink 50 has a main surface 51 adjacent to the insulating substrate 11. The heat sink 50 dissipates heat generated by the power semiconductor elements 18a and 18b to the outside of the power semiconductor module 1. The heat sink 50 is formed of a metal material, for example, aluminum. The heat sink 50 is mounted on a first mounting surface 25. Specifically, the heat sink 50 is mounted on the first mounting surface 25 using fastening members 52 such as screws or bolts. In this embodiment, the heat sink 50 is fastened to the housing 20 (flange 22) using fastening members 52. The fastening members 52 are inserted into the bushing 27.

[0048] When the radiator 50 is mounted on the first mounting surface 25, the radiator 50 contacts the heat transfer component 40, and the heat transfer component 40 is pressed by the radiator 50. Specifically, the main surface 51 of the radiator 50 contacts the surface 40a of the heat transfer component 40. The heat transfer component 40 is compressed, and the thickness of the heat transfer component 40 decreases. The maximum retraction distance L1 of the second mounting surface 15 from the first mounting surface 25 is smaller than the original thickness t1 of the heat transfer component 40 when it is not pressed, and larger than the lower limit thickness t2 of the heat transfer component 40 when it is pressed along the thickness direction of the heat transfer component 40. Therefore, at least a portion of the thickness of the heat transfer component 40 will not decrease to the lower limit thickness t2 of the heat transfer component 40. Specifically, the overall thickness of the heat transfer component 40 will not decrease to the lower limit thickness t2 of the heat transfer component 40. Therefore, excessive stress is prevented from being applied to the insulating substrate 11 from the heat transfer component 40 (in particular, the region of the insulating substrate 11 near the protrusion 23, the fastening component 52 and the hole 29 (through hole 28), that is, the region of the insulating substrate 11 near the side 11s).

[0049] The radiator 50 can also contact the first mounting surface 25. Specifically, the main surface 51 of the radiator 50 can also contact the back surface 24 of the housing 20 (flange 22).

[0050] Reference Figure 1 and Figure 4 Here, a first example of the manufacturing method of the power semiconductor module 1 according to this embodiment will be described. In this first example, the heat transfer component 40 is a non-fluid material such as a sheet or gel.

[0051] Reference Figure 4 A power semiconductor assembly 2 is prepared. Specifically, a circuit board 10 is prepared. The circuit board 10 includes an insulating substrate 11 and a conductive circuit pattern 12. The circuit board 10 may also include a conductive plate 13. Power semiconductor elements 18a and 18b are bonded to the conductive circuit pattern 12 using conductive bonding members 19a and 19b. A housing 20 is bonded to the circuit board 10 using an adhesive 30. The power semiconductor elements 18a and 18b are encapsulated using an encapsulation member 35. Thus, the power semiconductor assembly 2 is obtained. The power semiconductor assembly 2 has a first mounting surface 25. Specifically, the first mounting surface 25 is the back surface 24 of the housing 20 (flange 22). The circuit board 10 has a second mounting surface 15. Specifically, the second mounting surface 15 is the back surface of the conductive plate 13 away from the insulating substrate 11.

[0052] Reference Figure 4The heat transfer component 40 is mounted on the second mounting surface 15 of the circuit board 10. The heat transfer component 40 may also be fitted into a recess formed by the housing 20 and the second mounting surface 15. The heat transfer component 40 may also be bonded to the second mounting surface 15 using a thermally conductive adhesive. Thus, a... Figure 1 The power semiconductor module 1 shown.

[0053] Furthermore, referring to Figure 3 Alternatively, a fastening component 52 such as a screw or bolt can be used to mount the heat sink 50 to the first mounting surface 25 of the power semiconductor assembly 2. The fastening component 52 is inserted into a hole 29. In this embodiment, the hole 29 is a through hole 28. When the heat sink 50 is mounted on the first mounting surface 25, the heat sink 50 contacts the heat transfer component 40, and the heat transfer component 40 is pressed by the heat sink 50. Specifically, the main surface 51 of the heat sink 50 contacts the surface 40a of the heat transfer component 40. The heat transfer component 40 is compressed, and the thickness of the heat transfer component 40 is reduced. Thus, a Figure 3 The power semiconductor module 1 shown.

[0054] Reference Figure 1 , Figure 5 and Figure 6 A second example of the manufacturing method of the power semiconductor module 1 according to this embodiment will be described. In this second example, the heat transfer component 40 is a fluid such as grease.

[0055] Reference Figure 5 Similar to the first example of the manufacturing method of the power semiconductor module 1 in this embodiment, a power semiconductor assembly 2 is prepared. Then, a mask 56 is disposed on the first mounting surface 25 of the power semiconductor assembly 2.

[0056] Reference Figure 6 A fluid substance 40p, such as grease, is applied to the second mounting surface 15 of the circuit board 10. A mask 56 prevents the fluid substance 40p from adhering to the first mounting surface 25. Then, the mask 56 is removed. Thus, the desired result is obtained. Figure 1 The power semiconductor module 1 shown.

[0057] Furthermore, referring to Figure 3 Alternatively, fasteners such as screws or bolts can be used to mount the heat sink 50 to the first mounting surface 25 of the power semiconductor assembly 2. Thus, the desired result is obtained. Figure 3 The power semiconductor module 1 shown.

[0058] The effects of the power semiconductor module 1 in this embodiment will be explained.

[0059] The power semiconductor module 1 of this embodiment includes a power semiconductor assembly 2 and a heat transfer component 40. The power semiconductor assembly 2 includes a circuit board 10, power semiconductor elements 18a and 18b, and a housing 20. The circuit board 10 includes an insulating substrate 11 having a first main surface 11a and a conductive circuit pattern 12 disposed on the first main surface 11a of the insulating substrate 11. The power semiconductor elements 18a and 18b are mounted on the conductive circuit pattern 12. The housing 20 includes a cylindrical body 21 and an extension 23 extending from the cylindrical body 21 toward the inside of the cylindrical body 21. The cylindrical body 21 houses the power semiconductor elements 18a and 18b and the conductive circuit pattern 12. When viewed from above, the extension 23 faces the first main surface 11a or the conductive circuit pattern 12 of the insulating substrate 11 and is in direct or indirect contact with the first main surface 11a or the conductive circuit pattern 12. The power semiconductor assembly 2 has a first mounting surface 25 for mounting a heat sink 50. The circuit board 10 has a second mounting surface 15 for mounting the heat transfer member 40. The first mounting surface 25 and the second mounting surface 15 are located on the opposite side from the power semiconductor elements 18a and 18b relative to the insulating substrate 11. The second mounting surface 15 is recessed relative to the first mounting surface 25 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. The maximum receding distance L1 of the second mounting surface 15 from the first mounting surface 25 is smaller than the original thickness t1 of the heat transfer member 40 when it is not pressed, and larger than the lower limit thickness t2 of the heat transfer member 40 when it is pressed along the thickness direction of the heat transfer member 40.

[0060] Therefore, even though mounting the heat sink 50 on the first mounting surface 25 compresses the heat transfer member 40, excessive stress is prevented from being applied to the insulating substrate 11 (particularly the area near the protrusion 23 in the insulating substrate 11) from the heat transfer member 40. Damage to the insulating substrate 11 can be prevented. Furthermore, when the heat sink 50 is mounted on the first mounting surface 25, the heat transfer member 40 is compressed. The heat transfer member 40 is more firmly in contact with the heat sink 50 and the first mounting surface 25. Therefore, the heat generated by the power semiconductor elements 18a and 18b can be conducted to the heat sink 50 with lower thermal resistance. The heat dissipation performance of the power semiconductor module 1 can be improved.

[0061] In the power semiconductor module 1 of this embodiment, the insulating substrate 11 further has a second main surface 11b opposite to the first main surface 11a, and a side surface 11s connecting the first main surface 11a and the second main surface 11b. The circuit board 10 further includes a conductive plate 13 disposed on the second main surface 11b of the insulating substrate 11. The housing 20 has a first mounting surface 25. The conductive plate 13 has a second mounting surface 15.

[0062] Therefore, even if the heat sink 50 is mounted on the first mounting surface 25 and the heat transfer member 40 is compressed, excessive stress is prevented from being applied to the insulating substrate 11 (specifically, the region of the insulating substrate 11 near the protrusion 23, i.e., the region of the insulating substrate 11 near the side 11s) from the heat transfer member 40. Damage to the insulating substrate 11 can be prevented.

[0063] In the power semiconductor module 1 of this embodiment, the power semiconductor assembly 2 has a first mounting surface 25 for mounting a heat sink 50 using a fastening member 52. The power semiconductor assembly 2 is provided with a hole 29 for the fastening member 52 to be inserted into and reach the first mounting surface 25. At least a portion of the hole 29 is provided in the housing 20.

[0064] Therefore, even if the heat sink 50 is mounted on the first mounting surface 25 and the heat transfer member 40 is compressed, excessive stress is prevented from being applied to the insulating substrate 11 (especially the area of ​​the insulating substrate 11 near the protrusion 23, the fastening member 52, and the hole 29) from the heat transfer member 40. Damage to the insulating substrate 11 can be prevented.

[0065] The power semiconductor module 1 of this embodiment also includes a heat sink 50. The heat sink 50 is mounted on the first mounting surface 25 and is in contact with the heat transfer component 40.

[0066] Therefore, even if the heat sink 50 is mounted on the first mounting surface 25 and compresses the heat transfer component 40, excessive stress on the insulating substrate 11 from the heat transfer component 40 is prevented. Damage to the insulating substrate 11 can be prevented. The heat dissipation of the power semiconductor module 1 can be improved.

[0067] In the power semiconductor module 1 of this embodiment, the heat sink 50 is in contact with the first mounting surface 25. Therefore, the heat dissipation of the power semiconductor module 1 can be improved.

[0068] Implementation method 2.

[0069] Reference Figure 7 The power semiconductor module 1b and power semiconductor component 2b of Embodiment 2 will be described below. The power semiconductor module 1b and power semiconductor component 2b of this embodiment have the same structure as the power semiconductor module 1 and power semiconductor component 2 of Embodiment 1, but differ from the power semiconductor module 1 and power semiconductor component 2 of Embodiment 1 in the following main points.

[0070] With respect to the power semiconductor module 1b and the power semiconductor assembly 2b, the second mounting surface 15 protrudes away from the insulating substrate 11 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. The maximum retraction distance L1 of the second mounting surface 15 from the first mounting surface 25 is determined by the retraction distance from the first mounting surface 25 of the edge of the second mounting surface 15 connected to the side surface 11s of the insulating substrate 11. The maximum retraction distance L1 is smaller than the original thickness t1 of the heat transfer member 40 when it is not pressed, and larger than the lower limit thickness t2 of the heat transfer member 40 when it is pressed along the thickness direction of the heat transfer member 40. When viewed from above the first mounting surface 25, the top 13t of the second mounting surface 15 is further away from the protrusion 23, the fastening member 52, and the hole 29 (through hole 28) than the side surface 11s of the insulating substrate 11. Specifically, the top 13t of the second mounting surface 15 is located at the center of the second mounting surface 15.

[0071] Reference Figure 8 The power semiconductor module 1b in this embodiment may also include a heat sink 50. The heat sink 50 is mounted on the first mounting surface 25 and is in contact with the heat transfer component 40.

[0072] Reference Figure 7 The top 13t of the second mounting surface 15 is recessed relative to the first mounting surface 25 of the housing 20 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. The receding distance L2 of the top 13t of the second mounting surface 15 from the first mounting surface 25 can also be larger than the lower limit thickness t2 of the heat transfer member 40 when it is pressed. Therefore, excessive stress is prevented from being applied to the insulating substrate 11 from the heat transfer member 40 (especially the region of the insulating substrate 11 near the protrusion 23, the fastening member 52, and the hole 29 (through hole 28), that is, the region of the insulating substrate 11 near the side 11s).

[0073] The retraction distance L2 of the top 13t of the second mounting surface 15, measured from the first mounting surface 25, can also be smaller than the lower limit thickness t2 of the heat transfer member 40 when it is pressed. For example, even if the retraction distance L2 is smaller than the lower limit thickness t2 of the heat transfer member 40, the maximum retraction distance L1 is larger than the lower limit thickness t2 of the heat transfer member 40. Therefore, excessive stress is prevented from being applied to the insulating substrate 11 from the heat transfer member 40 (in particular, the region of the insulating substrate 11 near the protrusion 23, the fastening member 52, and the hole 29 (through hole 28), that is, the region of the insulating substrate 11 near the side 11s).

[0074] In addition to the effects of the power semiconductor module 1 in Embodiment 1, the power semiconductor module 1b of this embodiment also achieves the following effects.

[0075] In the power semiconductor module 1b of this embodiment, the second mounting surface 15 protrudes away from the insulating substrate 11 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. When viewed from above the first mounting surface 25, the top 13t of the second mounting surface 15 is further away from the protrusion 23 than the side 11s of the insulating substrate 11, and is recessed relative to the first mounting surface 25 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11.

[0076] Therefore, the distance between the second mounting surface 15 and the heat sink 50 is reduced. This improves the heat dissipation of the power semiconductor module 1b.

[0077] In the case of the power semiconductor module 1b of this embodiment, the retraction distance L2 of the top 13t of the second mounting surface 15 from the first mounting surface 25 is smaller than the lower limit thickness t2 of the heat transfer component 40 when the heat transfer component 40 is pressed.

[0078] For example, even if the retreat distance L2 is smaller than the lower limit thickness t2 of the heat transfer component 40, the maximum retreat distance L1 is larger than the lower limit thickness t2 of the heat transfer component 40. Therefore, excessive stress is prevented from being applied to the insulating substrate 11 (specifically, the region of the insulating substrate 11 near the protrusion 23, i.e., the region of the insulating substrate 11 near the side 11s) from the heat transfer component 40. This prevents damage to the insulating substrate 11.

[0079] Implementation method 3.

[0080] Reference Figure 9 The power semiconductor module 1c and power semiconductor component 2c of Embodiment 3 will be described below. The power semiconductor module 1c and power semiconductor component 2c of this embodiment have the same structure as the power semiconductor module 1b and power semiconductor component 2b of Embodiment 2, but differ from the power semiconductor module 1b and power semiconductor component 2b of Embodiment 2 mainly in the following aspects.

[0081] With regard to the power semiconductor module 1c and the power semiconductor assembly 2c, the top 13t of the second mounting surface 15 extends from the first mounting surface 25 of the housing 20 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. The extension height L3 of the top 13t of the second mounting surface 15 from the first mounting surface 25 is less than or equal to the difference between the original thickness t1 of the heat transfer component 40 and the sum of the maximum retraction distance L1 and the lower limit thickness t2. That is, the extension height L3 of the top 13t of the second mounting surface 15 from the first mounting surface 25 satisfies the following formula (1).

[0082] L3≤t1-(L1+t2) (1)

[0083] Power semiconductor module 1c and power semiconductor module 1b of embodiment 2 (see reference) Figure 8 Similarly, it may also include a radiator 50. The radiator 50 is mounted on the first mounting surface 25 and is in contact with the heat transfer component 40.

[0084] In addition to the effects of the power semiconductor module 1b in Embodiment 2, the power semiconductor module 1c of this embodiment also achieves the following effects.

[0085] In the power semiconductor module 1c of this embodiment, the second mounting surface 15 protrudes to the side opposite to the insulating substrate 11 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. When viewed from above the first mounting surface 25, the top 13t of the second mounting surface 15 is further away from the protrusion 23 than the side surface 11s of the insulating substrate 11, and protrudes from the first mounting surface 25 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. The protrusion height L3 of the top 13t of the second mounting surface 15 from the first mounting surface 25 is less than or equal to the difference between the original thickness t1 of the heat transfer member 40 and the sum of the maximum receding distance L1 and the lower limit thickness t2.

[0086] Therefore, the distance between the second mounting surface 15 and the heat sink 50 is reduced. This further improves the heat dissipation of the power semiconductor module 1c. Furthermore, even though the top 13t of the second mounting surface 15 extends from the first mounting surface 25 of the housing 20 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11, the extension height L3 of the top 13t of the second mounting surface 15 from the first mounting surface 25 is less than or equal to the difference between the original thickness t1 of the heat transfer member 40 and the sum of the maximum retreat distance L1 and the lower limit thickness t2. Therefore, excessive stress is prevented from being applied to the insulating substrate 11 (particularly, the region of the insulating substrate 11 near the protrusion 23, i.e., the region of the insulating substrate 11 near the side 11s) from the heat transfer member 40. This prevents damage to the insulating substrate 11.

[0087] Implementation method 4.

[0088] Reference Figure 10 and Figure 11 The power semiconductor module 1d and power semiconductor component 2d of Embodiment 4 will be described below. The power semiconductor module 1d and power semiconductor component 2d of this embodiment have the same structure as the power semiconductor module 1b and power semiconductor component 2b of Embodiment 2, but differ from the power semiconductor module 1b and power semiconductor component 2b of Embodiment 2 mainly in the following aspects.

[0089] With respect to the power semiconductor module 1d and the power semiconductor assembly 2d, the heat transfer member 40 includes a first heat transfer portion layer 41 with fluidity and a second heat transfer portion layer 42 with non-fluidity. The first heat transfer portion layer 41 has a surface 41a away from the insulating substrate 11. The second heat transfer portion layer 42 has a surface 42a away from the insulating substrate 11. The surface 40a of the heat transfer member 40 includes the surface 41a of the first heat transfer portion layer 41 and the surface 42a of the second heat transfer portion layer 42. When the heat transfer member 40 is not pressed, the surfaces 41a of the first heat transfer portion layer 41 and 42a of the second heat transfer portion layer 42 each extend from the first mounting surface 25 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. When viewed from above the second mounting surface 15, the second heat transfer portion layer 42 surrounds the first heat transfer portion layer 41. The second heat transfer section 42 is a heat transfer frame that functions as a weir relative to the first heat transfer section 41.

[0090] The first minimum thickness t3 of the first heat transfer layer 41 is greater than the lower limit thickness of the first heat transfer layer 41 when it is pressed along the thickness direction (third direction (z direction)). The lower limit thickness of the first heat transfer layer 41 is defined in the same way as the lower limit thickness of the heat transfer component 40.

[0091] In this embodiment, the second heat transfer layer 42 has a certain thickness t4, and the second minimum thickness and the second maximum thickness of the second heat transfer layer 42 are each equal to the thickness t4 of the second heat transfer layer 42. In this embodiment, the thickness t4 of the second heat transfer layer 42 defines the original thickness t1 of the heat transfer component 40. The second minimum thickness of the second heat transfer layer 42 is greater than the lower limit thickness of the second heat transfer layer 42 when it is pressed along the thickness direction (third direction (z direction)). The lower limit thickness of the second heat transfer layer 42 is defined in the same way as the lower limit thickness of the heat transfer component 40.

[0092] The maximum retraction distance L1 of the second mounting surface 15, measured from the first mounting surface 25, is smaller than the original thickness t1 of the heat transfer component 40 when it is not pressed, and larger than the lower limit thickness t2 of the heat transfer component 40 when it is pressed along its thickness direction. In this embodiment, the original thickness t1 of the heat transfer component 40 is determined by the thickness t4 of the second heat transfer layer 42. The lower limit thickness t2 of the heat transfer component 40 is determined by the larger of the lower limit thickness of the first heat transfer layer 41 and the lower limit thickness of the second heat transfer layer 42.

[0093] The first minimum thickness t3 of the first heat transfer layer 41 is smaller than the second minimum thickness of the second heat transfer layer 42. The first maximum thickness of the first heat transfer layer 41 is less than or equal to the second maximum thickness of the second heat transfer layer 42. The surface 41a of the first heat transfer layer 41 may also be coplanar with the surface 42a of the second heat transfer layer 42. Alternatively, in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11, the surface 42a of the second heat transfer layer 42 may extend further from the first mounting surface 25 than the surface 41a of the first heat transfer layer 41. Alternatively, in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11, the surface 41a of the first heat transfer layer 41 may extend further from the first mounting surface 25 than the surface 42a of the second heat transfer layer 42.

[0094] Reference Figure 12 The power semiconductor module 1d of this embodiment may also include a heat sink 50. The heat sink 50 is mounted on the first mounting surface 25 and contacts the heat transfer component 40. Specifically, the main surface 51 of the heat sink 50 contacts the surface 41a of the first heat transfer layer 41 and the surface 42a of the second heat transfer layer 42.

[0095] In addition to the effects of the power semiconductor module 1b in Embodiment 2, the power semiconductor module 1d of this embodiment also achieves the following effects.

[0096] In the case of the power semiconductor module 1d of this embodiment, the heat transfer component 40 includes a first heat transfer portion layer 41 with fluidity and a second heat transfer portion layer 42 with non-fluidity.

[0097] If the temperature of the power semiconductor module 1d changes, the circuit board 10 warps due to the difference in thermal expansion coefficients between the insulating substrate 11 and the conductive circuit pattern 12. The fluid first heat transfer layer 41 can absorb the warping of the circuit board 10, preventing excessive stress from the heat transfer member 40 on the insulating substrate 11. Furthermore, when the heat sink 50 is mounted on the first mounting surface 25, the non-fluid second heat transfer layer 42 improves the uniformity of the thickness of the fluid first heat transfer layer 41. This prevents excessive localized stress from the heat transfer member 40 on the insulating substrate 11 when the heat sink 50 is mounted on the first mounting surface 25. Thus, damage to the insulating substrate 11 can be prevented.

[0098] In the case of the power semiconductor module 1d of this embodiment, the first minimum thickness t3 of the first heat transfer layer 41 is smaller than the second minimum thickness (e.g., thickness t4) of the second heat transfer layer 42.

[0099] Therefore, the first heat transfer layer 41 can further absorb the warping of the circuit board 10. This prevents excessive stress from being applied to the insulating substrate 11 from the heat transfer component 40, and prevents damage to the insulating substrate 11.

[0100] In the case of the power semiconductor module 1d of this embodiment, when viewed from above the second mounting surface 15, the second heat transfer layer 42 surrounds the first heat transfer layer 41.

[0101] When the heat sink 50 is mounted on the first mounting surface 25, the non-flowing second heat transfer portion layer 42 further improves the uniformity of the thickness of the flowable first heat transfer portion layer 41. This prevents excessive localized stress from the heat transfer member 40 on the insulating substrate 11 when the heat sink 50 is mounted on the first mounting surface 25. Damage to the insulating substrate 11 can be prevented. Furthermore, even if the circuit board 10 warps, the flowable first heat transfer portion layer 41 can be prevented from overflowing from the outer edge of the circuit board 10 when viewed from above on the second mounting surface 15.

[0102] Implementation method 5.

[0103] Reference Figure 13 and Figure 14 The power semiconductor module 1e of Embodiment 5 will now be described. The power semiconductor module 1e of this embodiment has the same structure as the power semiconductor module 1d of Embodiment 4, but differs from the power semiconductor module 1d of Embodiment 4 mainly in the following aspects.

[0104] Regarding the power semiconductor module 1e, the second heat transfer layer 42 includes a plurality of heat transfer plates 42e. The plurality of heat transfer plates 42e are disposed at a plurality of corners of the second mounting surface 15. The plurality of heat transfer plates 42e may also be as follows: Figure 13 As shown, they are arranged along the length direction (first direction (x direction)) of the second mounting surface 15. Multiple heat transfer fins 42e can also be arranged as follows... Figure 14 As shown, the heat transfer fins 42e are arranged at an angle relative to the length and width directions (second direction (y direction)) of the second mounting surface 15. Each of the plurality of heat transfer fins 42e may also be arranged such that it intersects each of the two diagonals of the second mounting surface 15. The plurality of heat transfer fins 42e may also be arranged at at least two of the plurality of corners. Specifically, the plurality of heat transfer fins 42e may also be arranged at all of the plurality of corners.

[0105] The power semiconductor module 1e of this embodiment achieves the same effects as the power semiconductor module 1d of embodiment 4.

[0106] In the case of the power semiconductor module 1e of this embodiment, the second heat transfer layer 42 includes a plurality of heat transfer sheets 42e.

[0107] Therefore, when the heat sink 50 is mounted on the first mounting surface 25, the plurality of heat transfer fins 42e improve the uniformity of the thickness of the first heat transfer portion layer 41, which has fluidity. This prevents excessive localized stress from the heat transfer component 40 on the insulating substrate 11 when the heat sink 50 is mounted on the first mounting surface 25. This also prevents damage to the insulating substrate 11.

[0108] In the case of the power semiconductor module 1e of this embodiment, it is disposed at multiple corners of the second mounting surface 15.

[0109] If the temperature of the power semiconductor module 1e changes, the circuit board 10 warps due to the difference in thermal expansion coefficients between the insulating substrate 11 and the conductive circuit pattern 12. The central portion of the circuit board 10, where the warping is greatest, comes into contact with the fluid first heat transfer layer 41. Therefore, the warping of the circuit board 10 can be absorbed by the fluid first heat transfer layer 41. This prevents excessive stress from the heat transfer member 40 on the insulating substrate 11, thus preventing damage to the insulating substrate 11. Furthermore, when the heat sink 50 is mounted on the first mounting surface 25, the plurality of heat transfer plates 42e improve the uniformity of the thickness of the fluid first heat transfer layer 41. This prevents excessive localized stress from the heat transfer member 40 on the insulating substrate 11 when the heat sink 50 is mounted on the first mounting surface 25, further preventing damage to the insulating substrate 11.

[0110] Implementation method 6.

[0111] Reference Figure 15 The power semiconductor module 1f and power semiconductor component 2f of Embodiment 6 will be described below. The power semiconductor module 1f and power semiconductor component 2f of this embodiment have the same structure as the power semiconductor module 1 and power semiconductor component 2 of Embodiment 1, but differ from the power semiconductor module 1 and power semiconductor component 2 of Embodiment 1 in the following main points.

[0112] Regarding the power semiconductor module 1f and the power semiconductor assembly 2f, the conductive plate 13 contacts not only the insulating substrate 11 but also the flange 22 of the housing 20. Specifically, the conductive plate 13 contacts the back surface 24 of the housing 20 (flange 22). The conductive plate 13 has a first mounting surface 25 and a second mounting surface 15. The first mounting surface 25 is the back surface 13b of the conductive plate 13 opposite to the front surface of the conductive plate 13 facing the back surface 24 of the housing 20 (flange 22). In this embodiment, the back surface 13b of the conductive plate 13 is the first mounting surface 25. A through hole 17 communicating with a through hole 28 is provided in the conductive plate 13. The through hole 17 reaches the back surface 13b of the conductive plate 13. In this embodiment, a fastening member 52 (see reference 52) is provided. Figure 16The insertion hole 29 is formed by a through hole 28 provided in the housing 20 (flange 22) and a through hole 17 provided in the conductive plate 13.

[0113] Reference Figure 16 The power semiconductor module 1f in this embodiment may also include a heat sink 50. The heat sink 50 is mounted on the first mounting surface 25 and contacts the heat transfer component 40. The main surface 51 of the heat sink 50 may also contact the back surface 13b of the conductive plate 13.

[0114] The power semiconductor module 1f of this embodiment achieves the same effects as the power semiconductor module 1 of embodiment 1.

[0115] In the power semiconductor module 1f of this embodiment, the insulating substrate 11 further has a second main surface 11b opposite to the first main surface 11a. The circuit board 10 further includes a conductive plate 13 disposed on the second main surface 11b of the insulating substrate 11. The conductive plate 13 has a first mounting surface 25 and a second mounting surface 15.

[0116] Therefore, even if the heat sink 50 is mounted on the first mounting surface 25 and compresses the heat transfer member 40, excessive stress is prevented from being applied to the insulating substrate 11 from the heat transfer member 40. This prevents damage to the insulating substrate 11.

[0117] Implementation method 7.

[0118] Reference Figure 17 The power semiconductor module 1g and power semiconductor assembly 2g of Embodiment 7 will be described. The power semiconductor module 1g and power semiconductor assembly 2g of this embodiment have the same structure as the power semiconductor module 1 and power semiconductor assembly 2 of Embodiment 1, but differ from the power semiconductor module 1 and power semiconductor assembly 2 of Embodiment 1 in the following main points.

[0119] The power semiconductor component 2g also includes a spacer 60. The spacer 60 is formed of a metal material such as copper or aluminum. The spacer 60 is disposed on the back surface 24 of the housing 20 (flange 22). The first mounting surface 25 is the back surface 61 of the spacer 60 that is away from the back surface 24 of the housing 20 (flange 22) in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. In this embodiment, the back surface 61 of the spacer 60 is the first mounting surface 25. A through hole 62 communicating with a through hole 28 is provided in the spacer 60. The through hole 62 reaches the back surface 61 of the spacer 60. In this embodiment, a fastening member 52 (see reference) is provided. Figure 18 The insertion hole 29 is formed by the through hole 28 and the through hole 62.

[0120] Reference Figure 18The power semiconductor module 1g in this embodiment may also include a heat sink 50. The heat sink 50 is mounted on the first mounting surface 25 and contacts the heat transfer member 40. The main surface 51 of the heat sink 50 may also contact the back surface 61 of the spacer 60.

[0121] The power semiconductor module 1g of this embodiment achieves the same effects as the power semiconductor module 1 of Embodiment 1.

[0122] In the case of the power semiconductor module 1g of this embodiment, the power semiconductor assembly 2 further includes a spacer 60. The housing 20 includes a first surface (back surface 24) away from the insulating substrate 11 in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11. The spacer 60 is disposed on the first surface (back surface 24). The second surface (back surface 61) of the spacer 60 away from the first surface in the stacking direction (third direction (z direction)) of the conductive circuit pattern 12 and the insulating substrate 11 is a first mounting surface 25.

[0123] Therefore, even if the heat sink 50 is mounted on the first mounting surface 25 and compresses the heat transfer component 40, excessive stress on the insulating substrate 11 from the heat transfer component 40 is prevented. Damage to the insulating substrate 11 can be prevented. The spacer 60 increases the design flexibility of the housing 20.

[0124] Implementation method 8.

[0125] This embodiment applies the power semiconductor modules 1, 1b, 1c, 1d, 1e, 1f, and 1g involved in any of Embodiments 1 to 7 to a power conversion device. The power conversion device 200 in this embodiment is not particularly limited, but the following description focuses on a three-phase inverter.

[0126] Figure 19 The power conversion system shown consists of a power source 100, a power conversion device 200, and a load 300. The power source 100 is a DC power source, supplying DC power to the power conversion device 200. The power source 100 is not particularly limited; for example, it can be composed of a DC system, a solar cell, or a battery, or it can be composed of a rectifier circuit or an AC / DC converter connected to an AC system. The power source 100 can also be composed of a DC / DC converter that converts DC power output from a DC system into other types of DC power.

[0127] The power conversion device 200 is a three-phase inverter connected between the power source 100 and the load 300, which converts the DC power supplied from the power source 100 into AC power and supplies AC power to the load 300. The power conversion device 200 is as follows: Figure 19As shown, it includes: a main conversion circuit 201 that converts DC power into AC power for output; and a control circuit 203 that outputs a control signal to the main conversion circuit 201 to control the main conversion circuit 201.

[0128] Load 300 is a three-phase motor driven by AC power supplied from power conversion device 200. Furthermore, load 300 is not particularly limited and can be a motor mounted on various electrical devices, such as motors used in hybrid vehicles, electric vehicles, railway vehicles, elevators, or air conditioning equipment.

[0129] The details of the power conversion device 200 will be described below. The main conversion circuit 201 includes a switching element (not shown) and a freewheeling diode (not shown). By switching the voltage supplied from the power supply 100 on and off using the switching element, the main conversion circuit 201 converts the DC power supplied from the power supply 100 into AC power and supplies it to the load 300. Various specific circuit structures exist for the main conversion circuit 201, but the main conversion circuit 201 in this embodiment is a two-level three-phase full-bridge circuit, which can be constructed from six switching elements and six freewheeling diodes connected in antiparallel to each switching element. Power semiconductor modules 1, 1b, 1c, 1d, 1e, 1f, and 1g from any of the embodiments 1 to 7 can be applied to at least one of the switching elements and freewheeling diodes of the main conversion circuit 201. Power semiconductor modules 1, 1b, 1c, 1d, 1e, 1f, and 1g from any of the embodiments 1 to 7 can be applied to the power semiconductor module 202 constituting the main conversion circuit 201. Six switching elements are connected in series in pairs to form upper and lower bridge arms, and each upper and lower bridge arm constitutes a phase (U phase, V phase, and W phase) of the full bridge circuit. Furthermore, the output terminals of each upper and lower bridge arm, i.e., the three output terminals of the main conversion circuit 201, are connected to the load 300.

[0130] Additionally, the main conversion circuit 201 includes a drive circuit (not shown) for driving each switching element. The drive circuit can be either integrated into the power semiconductor module 202 or located externally. The drive circuit generates drive signals to drive the switching elements included in the main conversion circuit 201 and supplies these drive signals to the control electrodes of the switching elements in the main conversion circuit 201. Specifically, the drive circuit outputs drive signals to set the switching element to the ON state and drive signals to set the switching element to the OFF state to the control electrodes of each switching element according to the control signals from the control circuit 203.

[0131] In the power conversion device 200 according to this embodiment, the power semiconductor module 202 included in the main conversion circuit 201 uses any of the power semiconductor modules 1, 1b, 1c, 1d, 1e, 1f, and 1g from embodiments 1 to 7. Therefore, the reliability of the power conversion device 200 according to this embodiment is improved.

[0132] This embodiment illustrates an example of applying the present invention to a two-level three-phase inverter, but it is not limited thereto and can be applied to various power conversion devices. In this embodiment, a two-level power conversion device is used, but it could also be a three-level or multi-level power conversion device. When the power conversion device supplies power to a single-phase load, the present invention can also be applied to a single-phase inverter. When the power conversion device supplies power to a DC load, etc., the present invention can also be applied to a DC / DC converter or an AC / DC converter.

[0133] The power conversion device of the present invention is not limited to cases where the load is an electric motor. For example, it can be assembled into a power supply device for an electrical discharge machining machine or a laser processing machine, or a power supply device for an induction heating cooker or a contactless power supply system. The power conversion device of the present invention can be used as a power regulator for a solar power generation system or an energy storage system, etc.

[0134] It should be considered that all the contents of Embodiments 1 to 8 disclosed herein are merely illustrative and not limiting. At least two of Embodiments 1 to 8 may be combined without causing contradiction. For example, the heat transfer component of Embodiment 4 may be used as the heat transfer component of the power semiconductor module of Embodiments 1, 3, and 5 to 7. The scope of the present invention is not shown by the foregoing description, but by the claims, and is intended to include all modifications within the meaning and scope equivalent to the claims.

Claims

1. A power semiconductor module, comprising: a power semiconductor assembly; and a heat transfer member, the power semiconductor assembly including: a circuit substrate including an insulating substrate having a first main surface and a conductive circuit pattern provided on the first main surface; a power semiconductor element mounted on the conductive circuit pattern; and a housing including a cylindrical body and a protruding portion protruding from the cylindrical body toward an inner side of the cylindrical body, the cylindrical body accommodating the power semiconductor element and the conductive circuit pattern, the protruding portion opposing the first main surface or the conductive circuit pattern when viewed from above the first main surface and directly or indirectly contacting the first main surface or the conductive circuit pattern, the power semiconductor assembly having a first mounting surface on which a heat sink is mounted, the circuit substrate having a second mounting surface on which the heat transfer member is mounted, the first mounting surface and the second mounting surface being located on an opposite side to the power semiconductor element with respect to the insulating substrate, the second mounting surface being recessed with respect to the first mounting surface in a stacking direction of the conductive circuit pattern and the insulating substrate, a maximum setback distance of the second mounting surface from the first mounting surface being smaller than an original thickness of the heat transfer member when the heat transfer member is not pressed and larger than a lower limit thickness of the heat transfer member when the heat transfer member is pressed in a thickness direction of the heat transfer member.

2. The power semiconductor module according to claim 1, wherein the insulating substrate further has a second main surface on an opposite side to the first main surface, a side surface connecting the first main surface and the second main surface, the circuit substrate further includes a conductive plate provided on the second main surface, the housing has the first mounting surface, and the conductive plate has the second mounting surface.

3. The power semiconductor module according to claim 2, wherein the second mounting surface bulges away from the insulating substrate in the stacking direction, a top portion of the second mounting surface is farther from the protruding portion than the side surface when viewed from above the first mounting surface and is recessed with respect to the first mounting surface in the stacking direction.

4. The power semiconductor module according to claim 3, wherein a setback distance of the top portion of the second mounting surface from the first mounting surface is smaller than the lower limit thickness of the heat transfer member when the heat transfer member is pressed.

5. The power semiconductor module according to claim 2, wherein the second mounting surface bulges toward an opposite side to the insulating substrate in the stacking direction, a top portion of the second mounting surface is farther from the protruding portion than the side surface when viewed from above the first mounting surface and protrudes from the first mounting surface in the stacking direction, and a protruding height of the top portion of the second mounting surface from the first mounting surface is smaller than or equal to a difference between the original thickness of the heat transfer member and a sum of the maximum setback distance and the lower limit thickness.

6. The power semiconductor module according to claim 1, wherein the power semiconductor assembly further includes a spacer. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ the housing includes a first surface facing away from the insulating substrate in the stacking direction, the spacer is provided on the first surface, a second surface of the spacer facing away from the first surface in the stacking direction is the first mounting surface.

7. The power semiconductor module according to claim 1, wherein the insulating substrate further has a second main surface opposite the first main surface, the circuit substrate further includes a conductive plate provided on the second main surface, the conductive plate has the first mounting surface and the second mounting surface.

8. The power semiconductor module according to any one of claims 1 to 7, wherein the heat transfer member includes a first heat transfer portion layer having fluidity and a second heat transfer portion layer having non-fluidity.

9. The power semiconductor module according to claim 8, wherein a first minimum thickness of the first heat transfer portion layer is smaller than a second minimum thickness of the second heat transfer portion layer.

10. The power semiconductor module according to claim 8, wherein the second heat transfer portion layer surrounds the first heat transfer portion layer in a plan view of the second mounting surface.

11. The power semiconductor module according to claim 8, wherein the second heat transfer portion layer includes a plurality of heat transfer fins.

12. The power semiconductor module according to claim 11, wherein the plurality of heat transfer fins are arranged at a plurality of corners of the second mounting surface.

13. The power semiconductor module according to any one of claims 1 to 7, wherein the power semiconductor assembly has the first mounting surface on which the heat sink is mounted using a fastening member, the power semiconductor assembly is provided with a hole into which the fastening member is inserted and reaches the first mounting surface, at least a part of the hole is provided in the housing.

14. The power semiconductor module according to any one of claims 1 to 7, wherein further having the heat sink, the heat sink is mounted on the first mounting surface and is in contact with the heat transfer member.

15. The power semiconductor module according to claim 14, wherein the heat sink is in contact with the first mounting surface.

16. An electric power conversion device having: a main conversion circuit having the power semiconductor module according to any one of claims 1 to 15, and the main conversion circuit converts input electric power and outputs; and a control circuit that outputs a control signal that controls the main conversion circuit to the main conversion circuit.

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