An optimal read voltage determination method, apparatus, and electronic device

Abstract

Embodiments of the present application provide an optimal read voltage determination method, apparatus, and electronic device. Among them, the method includes: obtaining a target state parameter for representing the target read / write state of a storage block, a first probability distribution corresponding to the value of the first optimal read voltage when the storage block is in the target read / write state, and a first voltage value of the first optimal read voltage, and a second probability distribution corresponding to the value of the second optimal read voltage when the storage block is in the target read / write state, where the first voltage value is obtained by searching in the threshold voltage distribution of the storage block; predicting a second voltage value of the second optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution. Applying the solution provided by the embodiments of the present application can effectively reduce the number of voltage search operations and read operations required in the process of determining the optimal read voltage by predicting the optimal read voltage, and improve the efficiency of determining the optimal read voltage.

Description

Technical Field

[0001] The present invention relates to the technical field of data storage, and particularly to a method, device and electronic device for determining an optimal read voltage. Background Art

[0002] At present, the threshold voltage distribution of a storage device will change due to the influence of various factors during use, which in turn causes the value of the optimal read voltage for data reading from the storage device to change. And an accurate optimal read voltage is the key to ensuring data reading integrity. Therefore, how to effectively determine the optimal read voltage is still an important issue in the field of data storage.

[0003] In the related art, read operations are sequentially performed on each voltage value in the threshold voltage distribution of the storage device, and it is determined whether the voltage value is the voltage value corresponding to the optimal read voltage according to the results of the read operations, until all the voltage values of the optimal read voltage are searched through. However, this method requires too many search times and read operation times, resulting in low efficiency in determining the optimal read voltage. Summary of the Invention

[0004] The purpose of the embodiments of the present invention is to provide a method, device and electronic device for determining an optimal read voltage to improve the efficiency of determining the optimal read voltage. The specific technical solutions are as follows:

[0005] In the first aspect of the embodiments of the present invention, a method for determining an optimal read voltage is provided. The method includes:

[0006] Obtain a target state parameter for representing the target read / write state of a storage block, a first probability distribution corresponding to the value of a first optimal read voltage when the storage block is in the target read / write state, a first voltage value of the first optimal read voltage, and a second probability distribution corresponding to the value of a second optimal read voltage when the storage block is in the target read / write state; wherein, the first voltage value is obtained by searching in the threshold voltage distribution of the storage block;

[0007] Predict a second voltage value of the second optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution.

[0008] In the second aspect of the embodiments of the present invention, an apparatus for determining an optimal read voltage is provided. The apparatus includes:

[0009] An acquisition module, configured to acquire a target state parameter for representing a target read / write state of a storage block, a first probability distribution corresponding to a value of a first optimal read voltage when the storage block is in the target read / write state, a first voltage value of the first optimal read voltage, and a second probability distribution corresponding to a value of a second optimal read voltage when the storage block is in the target read / write state; wherein, the first voltage value is obtained by searching in a threshold voltage distribution of the storage block.

[0010] A prediction module, configured to predict a second voltage value of the second optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution.

[0011] In a third aspect of the embodiments of the present invention, an electronic device is provided, including:

[0012] A memory, configured to store a computer program;

[0013] A processor, configured to implement the method steps of any one of the above first aspects when executing the program stored in the memory.

[0014] In a fourth aspect of the embodiments of the present invention, a computer-readable storage medium is provided, where a computer program is stored in the computer-readable storage medium, and when the computer program is executed by a processor, the method steps of any one of the above first aspects are implemented.

[0015] Advantageous effects of the embodiments of the present invention:

[0016] The optimal read voltage determination method, device and electronic device provided by the embodiments of the present invention can, for each memory block in a storage device, predict a second voltage value based on the target state parameter, the first probability distribution, the first voltage value and the second probability distribution of the memory block. Since the factors affecting the first optimal read voltage and the second optimal read voltage are similar or even the same, there is a certain similarity between the variation rules of the second optimal read voltage and the first optimal read voltage. The target state parameter, the first probability distribution and the first voltage value can all reflect the variation of the first optimal read voltage to a certain extent, and thus can also reflect the variation rule of the second optimal read voltage to a certain extent. The second probability distribution is the probability distribution corresponding to the value of the second optimal read voltage, so the second probability distribution can reflect the variation rule of the second optimal read voltage value. Therefore, the variation of the second optimal read voltage can be predicted according to the target state parameter, the first probability distribution, the first voltage value and the second probability distribution. Thus, the second voltage value of the second optimal read voltage after the change can be predicted. Since the present invention only needs to determine the first voltage value by means of searching, the second voltage value can be predicted according to the determined first voltage value. Therefore, the present invention does not need to perform a search for each optimal read voltage, effectively reducing the number of voltage search operations and read operations required in the optimal read voltage process, and improving the determination efficiency of the optimal read voltage.

[0017] Of course, it is not necessary for any product or method implementing the present invention to achieve all the above advantages simultaneously. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments of the present invention, and those of ordinary skill in the art can also obtain other embodiments according to these drawings.

[0019] Figure 1 It is a schematic diagram of the optimal read voltage provided by the embodiments of the present invention;

[0020] Figure 2a It is a schematic flowchart of a method for determining the optimal read voltage provided by the embodiments of the present invention;

[0021] Figure 2b It is a schematic diagram of a probability distribution used in the method for determining the optimal read voltage provided by the embodiments of the present invention;

[0022] Figure 3 It is another schematic flowchart of the method for determining the optimal read voltage provided by the embodiments of the present invention;

[0023] Figure 4Another flowchart of the optimal read voltage determination method provided by the embodiment of the present invention;

[0024] Figure 5 Another flowchart of the optimal read voltage determination method provided by the embodiment of the present invention;

[0025] Figure 6 A structural diagram of an optimal read voltage determination device provided by the embodiment of the present invention;

[0026] Figure 7 A structural diagram of an electronic device for implementing the optimal read voltage determination method provided by the embodiment of the present invention. Detailed implementation manners

[0027] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art based on this application belong to the scope of protection of the present invention.

[0028] To more clearly illustrate the optimal read voltage determination method provided by the embodiment of the present invention, the optimal read voltage determination method provided by the embodiment of the present invention will be described below. It can be understood that the following examples are only a possible application scenario of the optimal read voltage determination method provided by the embodiment of the invention. In other possible embodiments, the optimal read voltage determination method provided by the embodiment of the present invention can also be applied to other possible application scenarios. The following examples do not impose any restrictions on this.

[0029] The storage device (such as various hard disk devices, etc.) includes multiple storage blocks, and each storage block is composed of multiple storage units. Taking a solid-state drive as an example, the storage blocks in the solid-state drive are composed of multiple flash memory particles (i.e., the storage units in the solid-state drive). During the data writing process, the storage units will be adjusted to different storage states according to the stored data. Exemplarily, taking the MLC (Multi-Level Cell, double-layer storage unit) type of storage unit as an example, each MLC type of storage unit stores 2 bits of data, and there are four possible values for 2 bits of data. Corresponding to the four possible values, the MLC type of storage unit has four storage states, and different storage states correspond to different values. For the convenience of description, it is assumed hereinafter that the four storage states are the first storage state, the second storage state, the third storage state, and the fourth storage state respectively. And the first storage state corresponds to the data "00", the second storage state corresponds to the data "01", the third storage state corresponds to the data "10", and the fourth storage state corresponds to the data "11".

[0030] When reading data, the data stored in the storage cell can be determined according to the storage state of the storage cell, thereby realizing data reading. For example, if the storage cell is in the second storage state, it can be determined that the data stored in the storage cell is "01".

[0031] The storage states are distinguished according to the value range of the voltage value of the storage cell, and the value range is divided according to the optimal read voltage. Still taking the MLC type storage cell as an example, assume that the value ranges corresponding to the four storage states during data writing are divided by three optimal read voltages, which are denoted as Va, Vb, and Vc from small to large. If the voltage value of the storage cell is less than Va, the storage cell is in the first storage state. If the voltage value is greater than Va and less than Vb, the storage cell is in the second storage state. If the voltage value is greater than Vb and less than Vc, the storage cell is in the third storage state. If the voltage value is greater than Vc, the storage cell is in the fourth storage state. Therefore, if the data stored in the storage cell is "01", the voltage value of the storage cell will be adjusted to the value range (Va, Vb) during data writing.

[0032] However, affected by various factors such as writing, erasing, read interference, erase interference, data shelf life, etc., the voltage of the storage cell will change, resulting in the voltage of the storage cell exceeding the value range corresponding to the storage state of the storage cell. Exemplarily, the voltage of the storage cell in the second storage state becomes greater than Vb after the change. If the storage state of the storage cell is distinguished according to the value range divided by the original optimal read voltage during data reading, the storage state of the storage cell may be incorrectly determined, resulting in incorrect data reading.

[0033] Therefore, it is necessary to determine the optimal read voltage for dividing the value range when reading data. In the related art, for each voltage value in turn, a read operation can be performed with this voltage value as the read voltage, and the number of electrons can be recorded. The number of electrons recorded at different voltage values is statistically analyzed, and the voltage value at which the number of electrons is at the valley value is found and determined as the voltage value of the optimal read voltage (hereinafter referred to as this method as traversal search).

[0034] Exemplarily, taking the MLC type storage cell as an example, assume that the relationship between the number of electrons and the read voltage is as Figure 1 shown. It can be seen that when the voltage values of the read voltage are Va, Vb, and Vc, the number of electrons is at the valley value. Therefore, the three optimal read voltages of the MLC type storage cell are Va, Vb, and Vc respectively.

[0035] However, this traversal search method requires multiple read operations, and for storage blocks with more optimal read voltages, such as storage blocks composed of QLC (Quad-Level Cell) type storage cells, the efficiency is low.

[0036] Based on this, an embodiment of the present invention provides an optimal read voltage determination method, which can be executed by an electronic device with computing capabilities such as a hard disk device, a computer, a server, etc. Especially when integrated in a hard disk device, it can greatly improve the performance of the hard disk device and enhance the user experience of using the hard disk device.

[0037] As Figure 2a shown, an optimal read voltage determination method provided by an embodiment of the present invention may include:

[0038] S201, obtain a target state parameter for representing the target read / write state of the storage block, a first probability distribution corresponding to the value of the first optimal read voltage when the storage block is in the target read / write state, a first voltage value of the first optimal read voltage, and a second probability distribution corresponding to the value of the second optimal read voltage when the storage block is in the target read / write state.

[0039] Among them, the first voltage value is obtained by searching in the threshold voltage distribution of the storage block. The threshold voltage distribution includes various read voltages that can be used for read operations, including the values corresponding to the optimal read voltage and the values corresponding to non-optimal read voltages.

[0040] S202, predict a second voltage value of the second optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution.

[0041] By selecting this embodiment, the second voltage value can be predicted according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution. Since the factors affecting the first optimal read voltage and the second optimal read voltage are similar or even the same, there is a certain similarity between the change rules of the second optimal read voltage and the first optimal read voltage. The target state parameter, the first probability distribution, and the first voltage value can all reflect the change of the first optimal read voltage to a certain extent, so they can also reflect the change rule of the second optimal read voltage to a certain extent. The second probability distribution is the probability distribution corresponding to the value of the second optimal read voltage, so the second probability distribution can reflect the change rule of the second optimal read voltage value. Therefore, according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution, the change of the second optimal read voltage can be predicted. Thus, the second voltage value of the changed second optimal read voltage can be predicted. Since the present invention only needs to determine the first voltage value by searching, and then can predict the second voltage value according to the determined first voltage value, the present invention does not need to search for each optimal read voltage, effectively reducing the number of voltage search operations and read operations required in the process of determining the optimal read voltage, and improving the determination efficiency of the optimal read voltage.

[0042] Exemplarily, taking a memory block composed of QLC-type memory cells as an example, since each QLC stores 4 bits of data, there are 16 storage states, and it is necessary to determine the voltage values of 15 optimal read voltages. In a memory block composed of QLC-type memory cells, there are four types of logical pages, namely LP, MP, UP, and XP. Among them, LP has 3 optimal read voltages, which are respectively denoted as optimal read voltage 2, optimal read voltage 8, and optimal read voltage 14; MP has 4 optimal read voltages, which are respectively denoted as optimal read voltage 3, optimal read voltage 7, optimal read voltage 9, and optimal read voltage 13; UP has 4 optimal read voltages, which are respectively denoted as optimal read voltage 5, optimal read voltage 10, optimal read voltage 12, and optimal read voltage 15; XP has 4 optimal read voltages, which are respectively denoted as optimal read voltage 1, optimal read voltage 4, optimal read voltage 6, and optimal read voltage 11. If it takes M read operations to determine the voltage value of an optimal read voltage by searching, then a total of 15 * M read operations are required in the related art. By using the optimal read voltage determination method provided in the embodiments of the present invention, it is only necessary to determine the voltage values of some optimal read voltages by searching for each type of logical page. Assuming that some optimal read voltages are two optimal read voltages, the optimal read voltage determination method provided in the embodiments of the present invention can determine the voltage values of these two optimal read voltages by searching, and then predict the voltage values of the remaining optimal read voltages of this logical page. Exemplarily, taking LP as an example, the voltage values of optimal read voltage 2 and optimal read voltage 8 are determined by searching, and based on the voltage values of optimal read voltage 2 and optimal read voltage 8, the voltage value of optimal read voltage 14 is predicted. Taking MP as an example, the voltage values of optimal read voltage 3 and optimal read voltage 7 are determined by searching, and based on the voltage values of optimal read voltage 3 and optimal read voltage 7, the voltage value of optimal read voltage 9 is predicted. Then, based on the voltage values of optimal read voltage 3, optimal read voltage 7, and optimal read voltage 9, the voltage value of optimal read voltage 13 is predicted. UP and XP are the same as MP and will not be elaborated here. Therefore, a total of 2 * M * 4 = 8 * M read operations are required. It can be seen that using the optimal read voltage determination method provided in the embodiments of the present invention can effectively reduce the number of required read operations and improve the determination efficiency of the optimal read voltage.

[0043] The following will separately describe the foregoing S201 - S202:

[0044] In S201, the target read / write state can be used to characterize the storage performance of the memory block. It can refer to the current read / write state in which the memory block is currently located, or it can refer to other read / write states other than the current read / write state, such as the read / write state that the memory block should be in when the user expects to read data. According to different application scenarios, the target read / write state can be represented by different target state parameters. Exemplarily, in a possible embodiment, the target state parameters include one or more of the following parameters:

[0045] Parameters used to represent write-erase cycles (P / E Cycle), parameters used to represent read disturbance (Read Disturb), parameters used to represent write disturbance (Program Disturb), and parameters used to represent data retention (Data Retention).

[0046] The number of the first optimal read voltages may be one or more. When there are more than one first optimal read voltages, the first probability distribution corresponding to the value of the first optimal read voltage refers to the first probability distribution corresponding to each first optimal read voltage, and the first voltage value of the first optimal read voltage refers to the first voltage value of each first optimal read voltage.

[0047] The first probability distribution and the second probability distribution are determined based on prior knowledge, and the first probability distribution and the second probability distribution can also be referred to as prior distributions of the first optimal read voltage and the second optimal read voltage, respectively. Since the difference between the first probability distribution and the second probability distribution is only that the corresponding optimal read voltages are different, for the convenience of description, the following only describes how to determine the first probability distribution. For the second probability distribution, please refer to the relevant description of the first probability distribution, which will not be repeated here:

[0048] The first probability distribution is used to represent the probability of different values ​​of the voltage value of the first optimal read voltage when the storage block is in the target read-write state. The second probability distribution is used to represent the probability of different values ​​of the voltage value of the second optimal read voltage when the storage block is in the target read-write state. The probability can be set by the user based on experience or obtained through statistics.

[0049] For example, in a possible embodiment, the user believes based on experience that the voltage values ​​of different first optimal reading voltages should conform to a normal distribution with a specific parameter as a parameter in the voltage-probability space. Then, the probabilities of the voltage values ​​of different first optimal reading voltages can be determined based on the normal distribution of the specific parameter, thereby obtaining the following: Figure 2b The first probability distribution is shown by the middle curve, Figure 2b The horizontal axis of each point on the middle curve represents the voltage value, and the vertical axis represents the probability of the voltage value being the first voltage value. In another possible embodiment, the voltage value of the first optimal read voltage when the storage block is in the target state during the historical time period can also be counted, and the probability of different voltage values ​​of the first optimal read voltage is determined according to the frequency of occurrence of each voltage value, thereby obtaining a first probability distribution, or a first prior distribution.

[0050] The first voltage value obtained through search may mean that the first voltage value is determined by traversing and searching, or it may mean that the first voltage value is determined by other search methods capable of searching for valleys other than traversing and searching. This embodiment does not impose any restrictions on this. The search algorithm used in the voltage value search process can be determined according to actual needs.

[0051] The execution timing of S201 may be different according to different application scenarios. Since the optimal read voltage may change over time, in one possible embodiment, S201 may be executed every preset time interval. In another possible embodiment, S201 may also be executed for the memory block with a read error when it is detected that there is a memory block with a read error. Selecting this embodiment can re-determine the optimal read voltage in a timely manner when the memory block has a read error to solve the read error of the memory block.

[0052] In S202, the prediction method may be different according to different application scenarios, including but not limited to implementing prediction using a deep neural network trained based on deep learning, implementing prediction using an algorithm model trained based on traditional machine learning, or implementing prediction using functions or function groups designed based on the user's professional knowledge.

[0053] In one possible embodiment, the foregoing S202 is implemented in the following manner:

[0054] Obtain a pre-determined voltage prediction mapping relationship, and based on the voltage prediction mapping relationship, use the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution as known quantities to predict the second voltage value of the second optimal read voltage when the memory block is in the target read / write state.

[0055] Among them, the voltage prediction mapping relationship is used to represent the corresponding relationship between known quantities and predicted quantities in the read voltage prediction process. The voltage prediction mapping relationship can be stored locally in the execution entity of the optimal read voltage determination method provided in this embodiment of the present invention. For example, in the application scenario of determining the optimal read voltage of a memory block in a solid-state drive set in a personal computer through a personal computer, the voltage prediction mapping relationship is stored in the solid-state drive of the personal computer. The voltage prediction mapping relationship can also be stored in other devices in communication connection with the execution entity.

[0056] In one possible embodiment, the voltage prediction mapping relationship is stored in a preset storage area of the storage device. When it is necessary to obtain the voltage prediction mapping relationship, the voltage prediction mapping relationship is obtained from the preset storage area through the pre-determined storage path of the voltage prediction mapping relationship. The specific location of the preset storage area in the storage device is not limited in the embodiments of the present application.

[0057] The voltage prediction mapping relationship can be characterized in the form of one or more models. These models can be neural network models trained based on deep learning, algorithm models trained based on traditional machine learning, or models designed by users according to professional knowledge and / or experience, such as models designed by algorithms such as vector regression and least squares regression. For the convenience of description, these models will be referred to as voltage prediction models in this article. The voltage prediction model has the function of predicting other unknown optimal read voltages based on the known optimal read voltages. Among them, the known optimal read voltages can include the optimal read voltages obtained through search and the optimal read voltages predicted previously.

[0058] Taking the case where the voltage prediction model is trained as an example for illustration. In this example, the voltage prediction model is trained based on pre-calibrated known quantities and predicted quantities.

[0059] The pre-calibrated known quantities include state parameters used to represent the first sample read / write state of the memory block, the probability distribution corresponding to the value of the first optimal read voltage when the memory block is in the first sample read / write state, the voltage value of the first optimal read voltage obtained through search under the first sample read / write state, and the probability distribution corresponding to the value of the second optimal read voltage when the memory block is in the first sample read / write state. The pre-calibrated predicted quantity includes the voltage value of the second optimal read voltage when the memory block is in the first sample read / write state.

[0060] When training the voltage prediction model, the known quantities can be input into the first original model to obtain the voltage value output by the first original model. According to the difference between the voltage value output by the first original model and the calibrated predicted quantity, the model parameters of the original model are adjusted until a preset convergence condition is reached, such as the number of adjustments reaches a preset number threshold, the convergence reaches a preset convergence threshold, etc. The adjusted original model is used as the voltage prediction model.

[0061] Exemplarily, in a possible embodiment, according to the difference between the voltage value output by the first original model and the calibrated predicted quantity, an objective function is constructed, and the model parameters of the first original model are adjusted in the direction of decreasing the objective function until the objective function is minimized. The adjusted first original model is used as the voltage prediction model.

[0062] In a possible embodiment, the second optimal read voltage can be any undetermined optimal read voltage. In another possible embodiment, the second optimal read voltage belongs to the same logical page as the first optimal read voltage. Selecting this embodiment, since the change rules of the optimal read voltages belonging to the same logical page are closer, using the first optimal read voltage to predict the second optimal read voltage belonging to the same logical page can make the predicted second voltage value more accurate.

[0063] That is, in one embodiment, obtaining a target state parameter for representing the target read / write state of a storage block, a first probability distribution corresponding to the value of the first optimal read voltage when the storage block is in the target read / write state and the first voltage value of the first optimal read voltage, and a second probability distribution corresponding to the value of the second optimal read voltage when the storage block is in the target read / write state includes: obtaining a target state parameter for representing the target read / write state of the storage block, a first probability distribution corresponding to the value of the first optimal read voltage of a target logical page in the storage block when in the target read / write state and the first voltage value of the first optimal read voltage, and a second probability distribution corresponding to the value of the second optimal read voltage of the target logical page when in the target read / write state; predicting the second voltage value of the second optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution, including: predicting the second voltage value of the second optimal read voltage when the target logical page in the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution. The target logical page may refer to any logical page in the storage block.

[0064] Exemplarily, taking the determination of each optimal read voltage of the MP in a storage block composed of QLC-type storage cells as an example, where if the first optimal read voltages are optimal read voltage 3 and optimal read voltage 7, and the second optimal read voltage is optimal read voltage 9. Then in this example, since the optimal read voltages that have not been determined after the search include optimal read voltage 9 and optimal read voltage 13, the second optimal read voltage is some of the undetermined optimal read voltages.

[0065] Taking the determination of each optimal read voltage of the LP in a storage block composed of QLC-type storage cells as an example again, where if the first optimal read voltages are optimal read voltage 2 and optimal read voltage 8, and the second optimal read voltage is optimal read voltage 14. Then in this example, since the optimal read voltage that has not been determined after the search only includes optimal read voltage 14, the second optimal read voltage is all of the undetermined optimal read voltages.

[0066] If the second optimal read voltage is all of the undetermined optimal read voltages, then after executing S102, the voltage values of all the optimal read voltages have been determined, and at this time, the read operation can be performed according to the determined optimal read voltages. If the second optimal read voltage is some of the undetermined optimal read voltages, then after executing S102, there are still some voltage values of the optimal read voltages that have not been determined. For these undetermined optimal read voltages, in one possible embodiment, the voltage values of these undetermined optimal read voltages can be determined by means of search. Preferably, the search method can continue to be used to determine the voltage values of the optimal read voltages.

[0067] In another possible embodiment, to determine the voltage values of these undetermined optimal read voltages, in the foregoingFigure 2a Based on the illustrated embodiments, it may further include:

[0068] S203. Obtain a third probability distribution corresponding to the value of the third optimal read voltage when the storage block is in the target read / write state.

[0069] Wherein, the third optimal read voltage is the optimal read voltage that has not been determined after performing the foregoing S202. Exemplarily, still taking the example of determining each optimal read voltage of MP in the foregoing QLC-type storage unit, since the voltage value of the optimal read voltage 13 has not been determined after predicting the voltage value of the second optimal read voltage, the third optimal read voltage is the optimal read voltage 13.

[0070] Taking a storage block composed of TLC (Triple-Level Cell) type storage units as an example, there are three types of logical pages in the storage block composed of TLC type storage units, namely LSB, CSB, and MSB. Among them, LSB has two optimal read voltages, denoted as the optimal read voltage A and the optimal read voltage E respectively, CSB has three optimal read voltages, denoted as the optimal read voltage B, the optimal read voltage D, and the optimal read voltage F respectively, and MSB has two optimal read voltages, denoted as the optimal read voltage C and the optimal read voltage G respectively, for a total of seven optimal read voltages. Taking CSB as an example, the voltage value of the optimal read voltage B is determined by means of traversal search. Taking the optimal read voltage B as the first optimal read voltage and the optimal read voltage D as the second optimal read voltage, the voltage value of the optimal read voltage D is predicted according to the optimal read voltage determination method provided by the embodiments of the present invention. Then, taking the optimal read voltage F as the third optimal read voltage, according to the steps of the foregoing S203, the voltage value of the optimal read voltage F is predicted, and then the voltage values of all the optimal read voltages of CSB can be determined.

[0071] S204. Predict the third voltage value of the third optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the second voltage value, and the third probability distribution.

[0072] The manner of predicting the third voltage value may be the same as or different from the manner of predicting the second voltage value. Exemplarily, in a possible embodiment, the prediction of the second voltage value is implemented by a neural network model trained based on deep learning, while the prediction of the third voltage value is implemented by an algorithm model designed based on user experience.

[0073] The voltage prediction mapping relationship (hereinafter referred to as the second voltage prediction mapping relationship) used when predicting the third voltage value is the same in principle as the voltage prediction mapping relationship (hereinafter referred to as the first voltage prediction mapping relationship) used when predicting the second voltage value, but there are differences in the representation forms. The known quantities of the second voltage prediction mapping relationship are the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the second voltage value, and the third probability distribution, and the predicted quantity is the third voltage value.

[0074] For convenience of description, it is assumed that the second voltage prediction mapping relationship is characterized in the form of a voltage prediction model. To distinguish it from the aforementioned voltage prediction model, the voltage prediction model used to characterize the first voltage prediction mapping relationship is denoted as the first voltage prediction model in the following text, and the voltage prediction model used to characterize the second voltage prediction mapping relationship is denoted as the second voltage prediction model.

[0075] The second voltage prediction model is trained based on the pre-calibrated known quantities and predicted quantities. The pre-calibrated known quantities include the state parameter used to represent the second sample read / write state of the storage block, the probability distribution corresponding to the value of the first optimal read voltage when the storage block is in the second sample read / write state, the voltage value of the first optimal read voltage searched in the second sample read / write state, the probability distribution corresponding to the value of the second optimal read voltage when the storage block is in the second sample read / write state, the voltage value of the second optimal read voltage searched in the second sample read / write state, and the probability distribution corresponding to the value of the third optimal read voltage when the storage block is in the second sample read / write state. The predicted quantity includes the voltage value of the second optimal read voltage when the storage block is in the second sample read / write state.

[0076] Among them, the second sample read / write state and the aforementioned first sample read / write state may be the same read / write state or different read / write states. When training the second voltage prediction model, the known quantities can be input into the second original model to obtain the voltage value output by the second original model. According to the difference between the voltage value output by the second original model and the calibrated predicted quantity, the model parameters of the original model are adjusted until the preset convergence condition is reached, such as the number of adjustments reaches the preset number threshold, the convergence reaches the preset convergence threshold, etc. The second original model after adjustment is used as the second voltage prediction model.

[0077] By selecting this embodiment, the voltage value of the remaining undetermined third optimal read voltage can be predicted with the help of the already predicted second voltage value. Since the second voltage value is additionally referred to, the accuracy of the predicted third optimal read voltage is higher. That is, selecting this embodiment can further improve the accuracy of the determined voltage value of the optimal read voltage.

[0078] The third optimal read voltage may be all the optimal read voltages that have not been determined after performing the foregoing S202, or may be some of the optimal read voltages that have not been determined after performing the foregoing S202. Moreover, the third optimal read voltage and the first optimal read voltage and the second optimal read voltage may belong to the same logical page or may belong to different logical pages.

[0079] That is, in a possible embodiment, the known optimal read voltage of one logical page can be used to predict the voltage value of the undetermined optimal read voltage of another logical page. Selecting this embodiment can reduce the number of optimal read voltages that need to be determined by searching, thereby further reducing the read operations required to determine the optimal read voltage and improving the efficiency of determining the optimal read voltage. In another possible embodiment, the known optimal read voltage of one logical page is used to predict the voltage value of the undetermined optimal read voltage of the same logical page. Since the variation law of the optimal read voltages belonging to the same logical page is closer, the predicted voltage value of the optimal read voltage is more accurate, that is, selecting this embodiment can further improve the accuracy of the predicted optimal read voltage.

[0080] For the convenience of description hereinafter, only the case where the first optimal read voltage, the second optimal read voltage, and the third optimal read voltage belong to the same logical page is taken as an example for illustration. For the case where the first optimal read voltage, the second optimal read voltage, and the third optimal read voltage belong to different logical pages, the principle is the same, so it will not be elaborated here.

[0081] If the third optimal read voltage is some of the optimal read voltages that have not been determined after performing the foregoing S202, then after performing S204, there are still some optimal read voltages whose voltage values have not been determined. For these undetermined optimal read voltages, the fourth voltage value of the fourth optimal read voltage can be predicted according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the second voltage value, the third probability distribution, the third voltage value, and the fourth probability distribution corresponding to the fourth optimal read voltage value.

[0082] Similarly, the fourth optimal read voltage may be all the optimal read voltages among these undetermined optimal read voltages, or may be some of these undetermined optimal read voltages. For the case where the fourth optimal read voltage is some of these undetermined optimal read voltages, there are still some optimal read voltages whose voltage values have not been determined after determining the fourth voltage value of the fourth optimal read voltage. Regarding how to continue to determine the voltage values of all the optimal read voltages, it can be deduced by analogy and will not be elaborated here.

[0083] It can be understood that if the predicted second voltage value is accurate, the second voltage value can reflect the variation law of the second optimal read voltage, thereby serving as a reference basis for predicting the third voltage value to improve the accuracy of the predicted third voltage value. On the contrary, if the predicted second voltage value is not accurate enough, the accuracy of the third voltage value predicted based on the second voltage value will also be relatively low.

[0084] Based on this, in a possible embodiment, as Figure 3 shown, before the aforementioned S204, it further includes:

[0085] S205, perform a read operation on the storage block based on the first voltage value and the second voltage value. If the read operation is successful, execute S204; if the read operation is abnormal, execute S206.

[0086] It can be understood that since the first voltage value is obtained through search, it can be considered that the first voltage value is accurate enough. Therefore, if the predicted second voltage value is the true voltage value of the second optimal read voltage, that is, the predicted second voltage value is accurate enough, the read operation will be successfully executed. On the contrary, if the predicted second voltage value is not accurate enough, the read operation will be abnormal.

[0087] Therefore, if the read operation is successful, it is considered that the second voltage value is the true voltage value of the second optimal read voltage. Therefore, the third voltage value can be predicted continuously according to the second voltage value.

[0088] S206, search in the threshold voltage distribution of the storage block to obtain the voltage value corresponding to the second optimal read voltage.

[0089] As described above, at this time, it is considered that the predicted second voltage value is not accurate enough. If the second voltage value is not accurate enough, it can be considered that the third voltage value cannot be accurately predicted according to the second voltage value. Therefore, it is necessary to re-determine the value of the second optimal read voltage through search.

[0090] S207, predict the third voltage value of the third optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the voltage value corresponding to the second optimal read voltage obtained through search, and the third probability distribution.

[0091] Selecting this embodiment can verify the predicted voltage value through the read operation, so as to re-determine the accurate voltage value by search in the case where the predicted voltage value is not accurate, thereby further improving the accuracy of the predicted voltage value.

[0092] It can be understood that Figure 3This is only a schematic flowchart of the optimal read voltage determination method provided by the embodiments of the present invention. In other possible embodiments, S205 may also be executed before S203.

[0093] In addition to the above example description of the method execution order, in the embodiments of the present application, the read operation on the storage block based on the first voltage value and the second voltage value, and the third voltage value for predicting the third optimal read voltage when the storage block is in the target read / write state may also be executed in parallel.

[0094] Optionally, in another possible embodiment, the method provided by the embodiments of the present application may further include:

[0095] Performing a read operation on the storage block based on the first voltage value, the second voltage value, and the third voltage value;

[0096] If the read operation is executed abnormally, then search in the threshold voltage distribution of the storage block to obtain the voltage value corresponding to the second optimal read voltage;

[0097] According to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the voltage value corresponding to the second optimal read voltage obtained by search, and the third probability distribution, re-predict the third voltage value of the third optimal read voltage when the storage block is in the target read / write state.

[0098] As analyzed above, the prediction accuracy of the third voltage value depends on the accuracy of the second voltage value. That is, after the read voltage prediction is completed, according to the execution situation of the read operation, it can be determined retrospectively whether the predicted voltage value of the second optimal read voltage is accurate, thereby ensuring the feasibility and accuracy of the predicted third voltage value.

[0099] To more clearly illustrate the optimal read voltage prediction method provided by the embodiments of the present invention, the following will be described by way of specific examples. In this example, there are four optimal read voltages, denoted as optimal read voltages A - D respectively. Among them, optimal read voltages A and B are the aforementioned first optimal read voltages, and the voltage values of optimal read voltages A and B have been obtained through search. Optimal read voltage C is the aforementioned second optimal read voltage, and optimal read voltage D is the aforementioned third optimal read voltage. Refer to Figure 4 , including:

[0100] S401, obtaining the target state parameter of the target read / write state of the storage block.

[0101] S402, obtaining the probability distributions corresponding to the values of the optimal read voltages A - D.

[0102] That is, obtaining the first probability distribution, the second probability distribution, and the third probability distribution.

[0103] S403. Predict the voltage value of the optimal read voltage C according to the voltage values of the optimal read voltages A and B, the probability distributions corresponding to the values of the optimal read voltage A, the probability distributions corresponding to the values of the optimal read voltage B, and the probability distributions corresponding to the values of the optimal read voltage C.

[0104] That is, execute the aforementioned S202.

[0105] S404. Predict the voltage value of the optimal read voltage D according to the voltage values of the optimal read voltages A, B, and C, the probability distributions corresponding to the values of the optimal read voltage A, the probability distributions corresponding to the values of the optimal read voltage B, the probability distributions corresponding to the values of the optimal read voltage C, and the probability distributions corresponding to the values of the optimal read voltage D.

[0106] That is, execute the aforementioned S204.

[0107] S405. Perform a read operation on the storage block according to the determined voltage values of the optimal read voltages A - D. If the read operation is successful, the determination of the optimal read voltage value is completed. If the read operation is executed abnormally, execute S406.

[0108] It can be understood that if the predicted voltage values of the optimal read voltages C and D are accurate enough, the read operation will be executed normally. On the contrary, if the predicted voltage values of the optimal read voltages C and D are not accurate enough, the read operation will be executed abnormally.

[0109] S406. Re - determine the voltage value of the optimal read voltage C by searching. And according to the voltage values of the optimal read voltages A and B, the voltage value of the optimal read voltage C determined by searching, the probability distributions corresponding to the values of the optimal read voltage A, the probability distributions corresponding to the values of the optimal read voltage B, the probability distributions corresponding to the values of the optimal read voltage C, and the probability distributions corresponding to the values of the optimal read voltage D, re - predict the voltage value of the optimal read voltage D.

[0110] As described above, the read operation is executed abnormally. At this time, it is considered that the voltage value of at least one of the optimal read voltages C and D is not accurate enough. If the voltage value of the optimal read voltage C is not accurate enough, it can be considered that in this scenario, the voltage value of the optimal read voltage C cannot be accurately predicted. And the voltage value of the optimal read voltage D is predicted based on the voltage value of the optimal read voltage C. Therefore, if the predicted voltage value of the optimal read voltage D is not accurate enough, it may be because the voltage value of the optimal read voltage D cannot be accurately predicted in this scenario, or it may be because the voltage value of the optimal read voltage C based on which the voltage value of the optimal read voltage D is predicted is not accurate enough. Therefore, re - determine the voltage value of the optimal read voltage C by searching to ensure the feasibility and accuracy of predicting the voltage value of the optimal read voltage D.

[0111] S407. Perform a read operation on the storage block according to the voltage value of the optimal read voltage A-D obtained by the latest determination. If the read operation is successful, the determination of the optimal read voltage value is completed. If the read operation is executed abnormally, execute S408.

[0112] It can be understood that if the voltage value of the newly predicted optimal read voltage D is accurate enough, the read operation will be executed normally. On the contrary, if the voltage value of the newly predicted optimal read voltage D is not accurate enough, the read operation will be executed abnormally.

[0113] S408. Re-determine the voltage value of the optimal read voltage D by searching.

[0114] As described above, at this time, it is considered that the voltage value of the optimal read voltage D is not accurate enough, that is, the voltage value of the optimal read voltage D cannot be accurately predicted. Therefore, the voltage value of the optimal read voltage D is re-determined by searching.

[0115] After determining the new voltage value of the optimal read voltage D by searching, the determination of the optimal read voltage is completed.

[0116] Next, the application of the optimal read voltage determination method provided by the embodiments of the present invention will be described in combination with a specific application scenario. In this application scenario, the target read-write state is the current read-write state. Refer to Figure 5 , Figure 5 As shown in the following, it is another flow diagram of the optimal read voltage determination method provided by the embodiments of the present invention, including:

[0117] S501. Detect that a read error occurs in the storage block.

[0118] S502. Determine the voltage value of the first optimal read voltage by searching.

[0119] S503. According to the index of the storage block, read the target state parameter indicating the current read-write state of the storage block.

[0120] S504. Obtain the voltage prediction mapping relationship from the preset storage area through the storage path of the preset voltage prediction mapping relationship.

[0121] S505. Use the voltage prediction mapping relationship to predict the optimal read voltage that has not been determined.

[0122] Regarding how to use the voltage prediction mapping relationship to predict the optimal read voltage that has not been determined, refer to the relevant descriptions of S202 and S204 above, and will not be repeated here.

[0123] By selecting this embodiment, based on the optimal read voltage determination method provided by the embodiments of the present invention, when a read error occurs in the memory block, the respective optimal read voltages of the memory block can be re-determined. Since the optimal read voltage determination method provided by the embodiments of the present invention is highly efficient, the respective optimal read voltages of the memory block can be re-determined more quickly, thereby improving the efficiency of correcting read errors.

[0124] Corresponding to any of the aforementioned optimal read voltage determination methods, an embodiment of the present invention further provides an optimal read voltage determination device, as Figure 6 shown, the device includes:

[0125] An acquisition module 601, configured to acquire a target state parameter for representing the target read / write state of the memory block, a first probability distribution corresponding to the value of the first optimal read voltage when the memory block is in the target read / write state, a first voltage value of the first optimal read voltage, and a second probability distribution corresponding to the value of the second optimal read voltage when the memory block is in the target read / write state; wherein, the first voltage value is obtained by searching in the threshold voltage distribution of the memory block;

[0126] A prediction module 602, configured to predict a second voltage value of the second optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution.

[0127] In a possible embodiment, the prediction module 602 is specifically configured to:

[0128] Acquire a pre-determined voltage prediction mapping relationship, where the voltage prediction mapping relationship is used to represent the correspondence between known quantities and predicted quantities in the read voltage prediction process;

[0129] According to the voltage prediction mapping relationship, using the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution as known quantities, predict the second voltage value of the second optimal read voltage when the memory block is in the target read / write state.

[0130] In a possible embodiment, the voltage prediction mapping relationship is characterized by a voltage prediction model;

[0131] The voltage prediction model is trained based on pre-calibrated known quantities and predicted quantities;

[0132] The pre-calibrated known quantities include state parameters for representing the first sample read / write state of the memory block, the probability distribution corresponding to the value of the first optimal read voltage when the memory block is in the first sample read / write state, the voltage value of the first optimal read voltage obtained by searching in the first sample read / write state, and the probability distribution corresponding to the value of the second optimal read voltage when the memory block is in the first sample read / write state. The pre-calibrated predicted quantity includes the voltage value of the second optimal read voltage when the memory block is in the first sample read / write state.

[0133] In a possible embodiment, the obtaining module 601 is further configured to obtain a third probability distribution corresponding to the value of the third optimal read voltage when the memory block is in the target read / write state.

[0134] The prediction module is further configured to predict a third voltage value of the third optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the second voltage value, and the third probability distribution.

[0135] In a possible embodiment, the prediction module 602 is further configured to:

[0136] Perform a read operation on the memory block based on the first voltage value and the second voltage value.

[0137] If the read operation is successfully executed, predict a third voltage value of the third optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the second voltage value, and the third probability distribution.

[0138] Or

[0139] If the read operation is abnormally executed, search for the voltage value corresponding to the second optimal read voltage in the threshold voltage distribution of the memory block.

[0140] Predict a third voltage value of the third optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the voltage value corresponding to the second optimal read voltage obtained by searching, and the third probability distribution.

[0141] In a possible embodiment, the prediction module 602 is further configured to:

[0142] Perform a read operation on the memory block based on the first voltage value, the second voltage value, and the third voltage value.

[0143] If the read operation is executed abnormally, search for the voltage value corresponding to the second optimal read voltage in the threshold voltage distribution of the memory block;

[0144] Predict the third voltage value of the third optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the voltage value obtained by searching corresponding to the second optimal read voltage, and the third probability distribution.

[0145] In a possible embodiment, the memory block includes multiple types of logical pages, each type of logical page has multiple optimal read voltages, and the optimal read voltages of different types of logical pages are different;

[0146] The obtaining module 601 is specifically configured to:

[0147] Obtain a target state parameter for indicating the target read / write state of the memory block, a first probability distribution corresponding to the value of the first optimal read voltage of the target logical page in the memory block in the target read / write state, the first voltage value of the first optimal read voltage, and a second probability distribution corresponding to the value of the second optimal read voltage of the target logical page in the target read / write state;

[0148] The prediction module 602 is specifically configured to:

[0149] Predict the second voltage value of the second optimal read voltage when the target logical page in the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution.

[0150] In a possible embodiment, the obtaining module 601 is specifically configured to:

[0151] When it is monitored that there is a memory block with a read error, obtain a target state parameter for indicating the target read / write state of the memory block.

[0152] In a possible embodiment, the prediction module 602 is configured to:

[0153] Obtain the voltage prediction mapping relationship from a preset storage area through the storage path of the preset voltage prediction mapping relationship.

[0154] In a possible embodiment, the target state parameter includes one or more of the following state parameters:

[0155] A state parameter for indicating the write / erase cycle, a state parameter for indicating read interference, a state parameter for indicating write interference, a state parameter for indicating the data shelf life.

[0156] The above device embodiment and the above method embodiment belong to the same inventive concept and can achieve the same technical effects. For the content not described in detail in the device embodiment, reference can be made to the description in the method embodiment.

[0157] An embodiment of the present invention also provides an electronic device, as Figure 7 shown, including:

[0158] A memory 701 for storing a computer program;

[0159] A processor 702, when executing the program stored on the memory 701, implements the following steps:

[0160] Obtain a target state parameter for representing the target read / write state of a storage block, a first probability distribution corresponding to the value of the first optimal read voltage when the storage block is in the target read / write state, a first voltage value of the first optimal read voltage, and a second probability distribution corresponding to the value of the second optimal read voltage when the storage block is in the target read / write state; wherein, the first voltage value is obtained by searching in the threshold voltage distribution of the storage block;

[0161] Predict a second voltage value of the second optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution.

[0162] In addition to the memory 701 and the processor 702, the electronic device may further include a bus and a communication interface. The bus is used to connect the memory 701, the processor 702, and the communication interface, and the communication interface is used for communication between the above electronic device and other devices.

[0163] The communication bus mentioned in the above electronic device may be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. This communication bus can be divided into an address bus, a data bus, a control bus, etc.

[0164] The memory may include a Random Access Memory (RAM), or may also include a Non-Volatile Memory (NVM), such as at least one disk memory. Optionally, the memory may also be at least one storage device located far from the aforementioned processor.

[0165] The above-mentioned processor may be a general-purpose processor, including a Central Processing Unit (CPU), a Network Processor (NP), etc.; it may also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field-Programmable Gate Array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0166] In another embodiment provided by the present invention, there is also provided a computer-readable storage medium, in which a computer program is stored, and when the computer program is executed by a processor, the steps of the optimal read voltage method for any of the above storage media are implemented.

[0167] In another embodiment provided by the present invention, there is also provided a computer program product containing instructions, which when running on a computer, causes the computer to execute any of the optimal read voltage methods in the above embodiments.

[0168] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the processes or functions described in the embodiments of the present invention are generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by wire (such as coaxial cable, optical fiber, Digital Subscriber Line (DSL)) or wireless (such as infrared, wireless, microwave, etc.). The computer-readable storage medium may be any available medium that the computer can access, or a data storage device such as a server, data center, etc. that includes one or more integrated available media. The available medium may be a magnetic medium (such as a floppy disk, hard disk, magnetic tape), an optical medium (such as a DVD), or a semiconductor medium (such as a Solid State Disk (SSD)).

[0169] It should be noted that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including" or any other variant thereof are intended to cover non-exclusive inclusion, such that a process, method, article or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the process, method, article or device comprising the element.

[0170] Each embodiment in this specification is described in a related manner. For the same and similar parts among the embodiments, reference can be made to each other. Each embodiment focuses on the differences from other embodiments. In particular, for the embodiments of the device, electronic device, computer-readable storage medium, and computer program product, since they are basically similar to the method embodiments, the description is relatively simple, and reference can be made to the corresponding parts of the method embodiments for the relevant content.

[0171] The above are only the preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. An optimal read voltage determination method, characterized in that, the method includes: obtaining a target state parameter for representing the target read / write state of a memory block, a first probability distribution corresponding to the value of a first optimal read voltage when the memory block is in the target read / write state, a first voltage value of the first optimal read voltage, and a second probability distribution corresponding to the value of a second optimal read voltage when the memory block is in the target read / write state; wherein, the first voltage value is obtained by searching in the threshold voltage distribution of the memory block, and the first optimal read voltage and the second optimal read voltage are read voltages for dividing the value intervals corresponding to different storage states respectively; the target state parameter includes one or more of the following state parameters: a state parameter for representing the write / erase cycle, a state parameter for representing read interference, a state parameter for representing write interference, a state parameter for representing the data shelf life; predicting a second voltage value of the second optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution.

2. The method according to claim 1, characterized in that, the predicting a second voltage value of the second optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution includes: obtaining a pre-determined voltage prediction mapping relationship, wherein the voltage prediction mapping relationship is used to represent the corresponding relationship between known quantities and predicted quantities in the read voltage prediction process; predicting a second voltage value of the second optimal read voltage when the memory block is in the target read / write state by using the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution as known quantities according to the voltage prediction mapping relationship.

3. The method according to claim 2, characterized in that, the voltage prediction mapping relationship is characterized by a voltage prediction model; the voltage prediction model is trained based on pre-calibrated known quantities and predicted quantities; the pre-calibrated known quantities include a state parameter for representing the first sample read / write state of the memory block, a probability distribution corresponding to the value of a first optimal read voltage when the memory block is in the first sample read / write state, a voltage value of the first optimal read voltage obtained by searching in the first sample read / write state, and a probability distribution corresponding to the value of a second optimal read voltage when the memory block is in the first sample read / write state, and the pre-calibrated predicted quantity includes a voltage value of the second optimal read voltage when the memory block is in the first sample read / write state.

4. The method according to claim 1, characterized in that, the method further includes: obtaining a third probability distribution corresponding to the value of a third optimal read voltage when the memory block is in the target read / write state; Predict a third voltage value of a third optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the second voltage value, and the third probability distribution.

5. The method according to claim 4, wherein, the method further includes: performing a read operation on the memory block based on the first voltage value and the second voltage value; if the read operation is successfully performed, predicting a third voltage value of a third optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the second voltage value, and the third probability distribution; or if the read operation is abnormally performed, searching for a voltage value corresponding to the second optimal read voltage in the threshold voltage distribution of the memory block; predicting a third voltage value of a third optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the voltage value obtained by searching corresponding to the second optimal read voltage, and the third probability distribution.

6. The method according to claim 4, wherein, the method further includes: performing a read operation on the memory block based on the first voltage value, the second voltage value, and the third voltage value; if the read operation is abnormally performed, searching for a voltage value corresponding to the second optimal read voltage in the threshold voltage distribution of the memory block; predicting a third voltage value of a third optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the voltage value obtained by searching corresponding to the second optimal read voltage, and the third probability distribution.

7. The method according to claim 1, wherein, the memory block includes multiple types of logical pages, and there are multiple optimal read voltages for each type of logical page, and the optimal read voltages of different types of logical pages are different; the obtaining of the target state parameter for indicating the target read / write state of the memory block, the first probability distribution corresponding to the value of the first optimal read voltage when the memory block is in the target read / write state and the first voltage value of the first optimal read voltage, and the second probability distribution corresponding to the value of the second optimal read voltage when the memory block is in the target read / write state includes: obtaining the target state parameter for indicating the target read / write state of the memory block, the first probability distribution corresponding to the value of the first optimal read voltage of the target logical page in the memory block in the target read / write state and the first voltage value of the first optimal read voltage, and the second probability distribution corresponding to the value of the second optimal read voltage of the target logical page in the target read / write state. Predicting a second voltage value of a second optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution includes: Predicting a second voltage value of a second optimal read voltage when a target logical page in the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution.

8. The method according to claim 1, wherein, obtaining a target state parameter for representing a target read / write state of a memory block includes: When it is monitored that there is a memory block with a read error, obtaining a target state parameter for representing the target read / write state of the memory block.

9. The method according to claim 2, wherein, obtaining a pre-determined voltage prediction mapping relationship includes: Obtaining the voltage prediction mapping relationship from a preset storage area through a storage path of the pre-determined voltage prediction mapping relationship.

10. An apparatus for determining an optimal read voltage, wherein, the apparatus includes: an obtaining module, configured to obtain a target state parameter for representing a target read / write state of a memory block, a first probability distribution corresponding to a value of a first optimal read voltage when the memory block is in the target read / write state, a first voltage value of the first optimal read voltage, and a second probability distribution corresponding to a value of a second optimal read voltage when the memory block is in the target read / write state; wherein, the first voltage value is obtained by searching in a threshold voltage distribution of the memory block, and the first optimal read voltage and the second optimal read voltage are read voltages for dividing value intervals corresponding to different storage states respectively; the target state parameter includes one or more of the following state parameters: a state parameter for representing a write / erase cycle, a state parameter for representing a read interference, a state parameter for representing a write interference, a state parameter for representing a data shelf life; a prediction module, configured to predict a second voltage value of the second optimal read voltage when the memory block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution.

11. The apparatus according to claim 10, wherein, the prediction module is specifically configured to: obtain a pre-determined voltage prediction mapping relationship, where the voltage prediction mapping relationship is used to represent a correspondence between known quantities and predicted quantities in a read voltage prediction process; According to the voltage prediction mapping relationship, using the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution as known quantities, predicting a second voltage value of the second optimal read voltage when the memory block is in the target read / write state; the voltage prediction mapping relationship is characterized by a voltage prediction model; the voltage prediction model is obtained by training based on pre-calibrated known quantities and predicted quantities; The pre-calibrated known quantities include a state parameter for representing the first sample read / write state of the storage block, the probability distribution corresponding to the value of the first optimal read voltage when the storage block is in the first sample read / write state, the voltage value of the first optimal read voltage obtained by searching in the first sample read / write state, and the probability distribution corresponding to the value of the second optimal read voltage when the storage block is in the first sample read / write state. The pre-calibrated predicted quantity includes the voltage value of the second optimal read voltage when the storage block is in the first sample read / write state; The obtaining module is further configured to: obtain the third probability distribution corresponding to the value of the third optimal read voltage when the storage block is in the target read / write state; The prediction module is further configured to: predict the third voltage value of the third optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the second voltage value, and the third probability distribution; The prediction module is further configured to: perform a read operation on the storage block based on the first voltage value and the second voltage value; If the read operation is successfully executed, then predict the third voltage value of the third optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the second voltage value, and the third probability distribution; or If the read operation is executed abnormally, then search for the voltage value corresponding to the second optimal read voltage in the threshold voltage distribution of the storage block; Predict the third voltage value of the third optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the voltage value obtained by searching corresponding to the second optimal read voltage, and the third probability distribution; The prediction module is further configured to: Perform a read operation on the storage block based on the first voltage value, the second voltage value, and the third voltage value; If the read operation is executed abnormally, then search for the voltage value corresponding to the second optimal read voltage in the threshold voltage distribution of the storage block; Predict the third voltage value of the third optimal read voltage when the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, the second probability distribution, the voltage value obtained by searching corresponding to the second optimal read voltage, and the third probability distribution; The storage block includes multiple types of logical pages. There are multiple optimal read voltages for each type of logical page, and the optimal read voltages of different types of logical pages are different; The obtaining module is specifically configured to: obtain a target state parameter for representing the target read / write state of the storage block, the first probability distribution corresponding to the value of the first optimal read voltage of the target logical page in the storage block in the target read / write state and the first voltage value of the first optimal read voltage, and the second probability distribution corresponding to the value of the second optimal read voltage of the target logical page in the target read / write state; The prediction module is configured to: predict a second voltage value of a second optimal read voltage when a target logic page in the storage block is in the target read / write state according to the target state parameter, the first probability distribution, the first voltage value, and the second probability distribution; The obtaining module is specifically configured to: obtain a target state parameter representing a target read / write state of the storage block when a storage block with a read error is detected; The prediction module is configured to: obtain the voltage prediction mapping relationship from a preset storage area through a storage path of the preset voltage prediction mapping relationship.

12. An electronic device, Characterized in that, Comprising: A memory for storing a computer program; A processor, configured to implement the method according to any one of claims 1-9 when executing the program stored on the memory.

13. A computer-readable storage medium, Characterized in that, The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the method according to any one of claims 1-9 is implemented.

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