High isolation broadband dual-polarized antenna element and array based on high temperature co-fired ceramics

Abstract

The present invention discloses a high isolation broadband dual-polarized antenna element and array based on high temperature co-fired ceramics. The antenna element includes an antenna part and a radio frequency front-end part, and these two parts of the link are connected together using pads and feeding probes to form the antenna element. Both the antenna part 1 and the radio frequency front-end part 2 are designed using high temperature co-fired ceramic substrates. The original intention of using high temperature co-fired ceramic technology in this application is to realize the integration of the antenna and the radio frequency front-end, reduce the transmission path from the antenna to the radio frequency front-end, thereby reducing transmission loss, and achieving a good balance between cost and system performance.

Description

Technical Field

[0001] The present invention relates to the technical field of antennas, and particularly to a high isolation broadband dual-polarized antenna element and array based on high temperature co-fired ceramics. Background Art

[0002] Dual-polarized antennas are a new type of antenna technology that combines two antennas with orthogonal polarization directions of +45° and -45° and operates in a transceiver duplex mode at the same time. Therefore, their most prominent advantage is to save the number of antennas for a single directional base station; in the broadband dual-polarized antennas in the prior art, the antenna part and the RF front-end are of a split structure, the transmission path from the antenna to the RF front-end is relatively long, the loss is large, and the performance is poor. High temperature co-fired ceramic technology (HTCC) is a multi-layer circuit board manufacturing technology, which is characterized by laminating and sintering multi-layer dielectric boards together in a high temperature environment of 1500~1600°C, and is also applicable to the production of antennas. Summary of the Invention

[0003] The technical problem to be solved by the present invention is how to provide a high isolation broadband dual-polarized antenna element based on high temperature co-fired ceramics that can reduce transmission loss, has a relatively wide bandwidth, and has good isolation performance.

[0004] To solve the above technical problem, the technical solution adopted by the present invention is: a high isolation broadband dual-polarized antenna element based on high temperature co-fired ceramics, characterized in that: it includes an antenna part and an RF front-end part, and the two parts of the link are connected together using pads and feeding probes to form the antenna element.

[0005] A further technical solution lies in that: both the antenna part and the RF front-end part are designed using high temperature co-fired ceramic substrates.

[0006] A further technical solution lies in that: the antenna part includes a first high-temperature co-fired ceramic substrate, a first grounding layer is formed at the bottom of the first high-temperature co-fired ceramic substrate, two port mounting vias are formed on the first grounding layer, which are divided into a port V via and a port H via, a second grounding layer is formed on the upper surface of the first high-temperature co-fired ceramic substrate, two via holes are formed at positions corresponding to the port mounting vias respectively on the second grounding layer, a circumferential port V equivalent coaxial line and a port H equivalent coaxial line penetrating through the upper and lower surfaces are formed in the first high-temperature co-fired ceramic substrate outside the peripheries of the port V via and the port H via, the upper and lower ends of the port V equivalent coaxial line and the port H equivalent coaxial line are respectively connected to the second grounding layer and the first grounding layer, a second high-temperature co-fired ceramic substrate is formed on the upper surface of the second grounding layer, a radiation patch is formed on the upper surface of the second high-temperature co-fired ceramic substrate, a port V feed line and a port H feed line are formed on two adjacent sides of the radiation patch, the port V feed line and the port H feed line are respectively electrically connected to a second feed probe on the corresponding first high-temperature co-fired ceramic substrate through a first feed probe, and the second feed probes are respectively located at the axial center positions of the port V equivalent coaxial line and the port H equivalent coaxial line; a third high-temperature co-fired ceramic substrate is formed on the upper surface of the second high-temperature co-fired ceramic substrate outside the radiation patch layer, air holes are formed on the third high-temperature co-fired ceramic substrate, a fourth high-temperature co-fired ceramic substrate is formed on the upper surface of the third high-temperature co-fired ceramic substrate, a parasitic patch is formed on the lower surface of the fourth high-temperature co-fired ceramic substrate, an air cavity is enclosed by the second high-temperature co-fired ceramic substrate, the fourth high-temperature co-fired ceramic substrate and the air holes, and the radiation patch and the parasitic patch are located in the air cavity.

[0007] A further technical solution lies in that: a metal ring is formed on the upper surface of the fourth high-temperature co-fired ceramic substrate, and the metal ring is located outside the air cavity, and the metal ring is connected to the first grounding layer through a first metallized via.

[0008] A further technical solution lies in that: pads are respectively formed in the port V via and the port H via, and the pads are electrically connected to the lower ends of the second metallized vias.

[0009] A further technical solution lies in that: the diameter of the pads is smaller than the diameters of the port V via and the port H via.

[0010] Preferably, the sum of the thicknesses of the first high-temperature co-fired ceramic substrate and the second high-temperature co-fired ceramic substrate is 0.625 mm, the thickness of the third high-temperature co-fired ceramic substrate is 0.875 mm, and the thickness of the fourth high-temperature co-fired ceramic substrate is 0.5 mm.

[0011] A further technical solution lies in that: the RF front-end part includes a fifth high-temperature co-fired ceramic substrate, a sixth high-temperature co-fired ceramic substrate is formed on the upper surface of the fifth high-temperature co-fired ceramic substrate, a third feeding probe is formed in the fifth high-temperature co-fired ceramic substrate and the sixth high-temperature co-fired ceramic substrate, and the RF front-end part is electrically connected to the pad on the antenna part through the third feeding probe.

[0012] A further technical solution lies in that: a V' feeding line is formed on the edge of the radiation patch corresponding to the port V feeding line, an H' feeding line is formed on the edge of the radiation patch corresponding to the port H feeding line, the V' feeding line is connected to the first feeding probe connected to the port V feeding line through the feeding probe in the second high-temperature co-fired ceramic substrate, the H' feeding line is connected to the first feeding probe connected to the port H feeding line through the feeding probe in the second high-temperature co-fired ceramic substrate, and the first feeding probe is electrically connected to the second feeding probe on the corresponding first high-temperature co-fired ceramic substrate respectively.

[0013] An embodiment of the present invention also discloses a high-isolation broadband dual-polarized antenna array based on high-temperature co-fired ceramics, which is characterized in that: it includes a plurality of the high-isolation broadband dual-polarized antenna units arranged in an array.

[0014] The beneficial effects produced by adopting the above technical solutions are as follows: in this application, the integration of the antenna and the RF front-end is realized by using the high-temperature co-fired ceramic technology, the transmission path from the antenna to the RF front-end is reduced, thereby reducing the transmission loss, and making the cost and system performance have a good balance. To reduce the coupling between array units, a row of metallized vias is arranged on each of the four sides of the array unit, and the upper openings of all the metallized vias are connected together by a square metal ring at the top of the antenna. The square ring, the floor (GND1) and all the metallized vias constitute a dielectric integrated cavity structure, which has similar performance to a metal cavity, improves the bandwidth of the antenna array, and has good isolation performance. Description of the Drawings

[0015] The present invention will be further described in detail below with reference to the drawings and specific embodiments.

[0016] Figure 1 is a schematic cross-sectional structure diagram of the antenna unit according to an embodiment of the present invention;

[0017] Figure 2 is an exploded structure diagram of the antenna part in the antenna unit according to an embodiment of the present invention;

[0018] Figure 3a is a structural diagram of the parasitic patch and the corresponding high-temperature co-fired ceramic substrate of the antenna part in an embodiment of the present invention;

[0019] Figure 3b It is a schematic structural diagram of a radiation patch of an antenna part and a corresponding high-temperature co-fired ceramic substrate in an embodiment of the present invention;

[0020] Figure 4 It is a curve graph of the simulation result of the active standing wave ratio of an antenna unit in an embodiment of the present invention;

[0021] Figure 5 It is a curve graph of the simulation result of the cross-polarization port isolation of an antenna unit in an embodiment of the present invention;

[0022] Figure 6a It is a schematic diagram of a four-point feeding unit in an embodiment of the present invention;

[0023] Figure 6b It is a phase diagram of feeding points in an embodiment of the present invention;

[0024] Figure 6c It is the current flow direction of the patch in the working mode of port H in an embodiment of the present invention;

[0025] Figure 7 Simulation result diagram of the port isolation of a four-point feeding array unit;

[0026] Figure 8 Simulation result diagram of the port isolation of a four-point feeding array unit;

[0027] Wherein: 1. Antenna part; 1-1. First high-temperature co-fired ceramic substrate; 1-2. First grounding layer; 1-3. Port V via hole; 1-4. Port H via hole; 1-5. Through hole; 1-6. Port V equivalent coaxial line; 1-7. Port H equivalent coaxial line; 1-8. Second high-temperature co-fired ceramic substrate; 1-9. Radiation patch; 1-10. Port V feeder line; 1-11. Port H feeder line; 1-12. First feeding probe; 1-13. Second feeding probe; 1-14. Third high-temperature co-fired ceramic substrate; 1-15. Fourth high-temperature co-fired ceramic substrate; 1-16. Parasitic patch; 1-17. Air cavity; 1-18. Metal ring; 1-19. First metallized via hole; 1-20. Pad; 1-21. V' feeder line; 1-22. H' feeder line; 2. RF front-end part; 2-1. Fifth high-temperature co-fired ceramic substrate; 2-2. Sixth high-temperature co-fired ceramic substrate; 2-3. Third feeding probe. Detailed implementation manners

[0028] Next, in combination with the accompanying drawings in the embodiments of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0029] In the following description, many specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention may be practiced in other ways different from those described herein. Those skilled in the art can make similar generalizations without departing from the spirit of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0030] As Figure 1 shown, an embodiment of the present invention discloses a high isolation broadband dual-polarized antenna element based on high-temperature co-fired ceramics, which includes an antenna part 1 and a radio frequency front-end part 2. The two parts of the link are connected together using a pad 21 and a feeding probe to form the antenna element. Both the antenna part 1 and the radio frequency front-end part 2 are designed using high-temperature co-fired ceramic substrates. The original intention of using high-temperature co-fired ceramic technology in this application is to realize the integration of the antenna and the radio frequency front-end, reduce the transmission path from the antenna to the radio frequency front-end, thereby reducing the transmission loss, and achieving a good balance between cost and system performance.

[0031] The decomposition structure of the antenna part in this antenna element is as Figure 2 shown. The unit model is established in an infinite periodic array environment, and the unit size is 0.504×0.504 λ 17.5GHz2 (9.4×9.4 mm 2 , λ 4.2GHz which is the free space wavelength corresponding to the highest operating frequency 17.5 GHz of the antenna). The high-temperature co-fired ceramic substrate is made of alumina (Al2O3), and its relative dielectric constant is 9.8. The high dielectric constant substrate will limit the antenna bandwidth and cause scanning blind spots during array scanning, which is a major challenge for the broadband design of the array. To reduce the coupling between array units, a row of metallized vias is arranged on each of the four sides of the array unit, and a square metal ring is used at the top of the antenna to connect the upper openings of all the metallized vias together. The square ring, the floor (GND1) and all the metallized vias constitute a dielectric integrated cavity structure, and this structure has similar performance to a metal cavity. For the convenience of drawing, the metallized via structure is shown in Figure 1 and hidden in Figure 2 .

[0032] The main radiation structure of the unit antenna is two-layer square patches. The lower patch is the feed radiation patch, and the upper patch is the parasitic coupling patch. The two patches can form two resonant points with similar frequencies, effectively broadening the antenna bandwidth. An air cavity is embedded in the dielectric layer between the two patches, and the thickness of the air cavity is 0.875 mm. Considering the mechanical strength of the high-temperature co-fired ceramic substrate, to maintain the stability of the overall antenna structure, the thicknesses of the substrate above and below the air cavity are 0.5 mm and 0.625 mm respectively. The patch antenna is fed by a pair of probes for two orthogonal polarizations. The equivalent metal probe structure is formed by metallized vias. The probes connect the microstrip feeder to the pads at the bottom of the antenna layer. Since the currents mainly distributed in the vertical direction are on both probes, the addition of the microstrip feeder can avoid the decrease in the isolation degree of the orthogonal polarization ports caused by the too-close distance between the two probes. The antenna also adopts a double-layer ground plane design, namely GND1 and GND2 in the figure. This is because the size of the pads is large, and in the conversion transition structure from the pads to the microstrip feeder, energy may be coupled from one port to another orthogonal polarization port. To solve this problem, a ground plane is added above the pads for shielding, and small holes are opened on the upper ground plane (GND1) to allow the feed probes to pass through. The energy leakage caused by the small holes is less than that of the pads. There is a circle of metallized vias around the feed probes between the two ground planes. These metallized vias and the feed probes together form an equivalent coaxial line structure. The characteristic impedance of the coaxial line can be given by the following formula:

[0033]

[0034] In the formula b is the outer diameter of the coaxial line, a is the inner diameter of the coaxial line, e r is the relative dielectric constant of the coaxial line medium, which is the relative dielectric constant of the dielectric layer here. Considering that the port impedance at the antenna pads is 50 Ω, the characteristic impedance of the equivalent coaxial line is also designed to be 50 Ω for convenient matching. Further, when the electrical length of the equivalent coaxial line is close to λ / 4, it can be regarded as an impedance transformer to adjust the impedance matching of the antenna. λ The characteristic impedance design formula of the / 4 impedance transformer is:

[0035]

[0036] In the formula Z 01 is the transformed port impedance, Z 02 is the characteristic impedance of the transmission line before transformation. This formula can be used to preliminarily calculate the size of the equivalent coaxial line, and then the size parameters are brought into the actual antenna for further simulation and optimization.

[0037] Further, as Figure 2 shown, the antenna part 1 includes a first high-temperature co-fired ceramic substrate 1-1. A first ground layer 1-2 is formed at the bottom of the first high-temperature co-fired ceramic substrate 1-1. Two port mounting vias are formed on the first ground layer 1-2, which are divided into a port V via 1-3 and a port H via 1-4. A second ground layer 1-4 is formed on the upper surface of the first high-temperature co-fired ceramic substrate 1-1. Two via holes 1-5 are formed at positions corresponding to the port mounting vias on the second ground layer 1-4. A circumferential port V equivalent coaxial line 1-6 and a port H equivalent coaxial line 1-7 penetrating the upper and lower surfaces are formed in the first high-temperature co-fired ceramic substrate 1-1 outside the peripheries of the port V via 1-3 and the port H via 1-4. The upper and lower ends of the port V equivalent coaxial line 1-6 and the port H equivalent coaxial line 1-7 are respectively connected to the second ground layer 1-4 and the first ground layer 1-2. A second high-temperature co-fired ceramic substrate 1-8 is formed on the upper surface of the second ground layer 1-4. A radiation patch 1-9 is formed on the upper surface of the second high-temperature co-fired ceramic substrate 1-8. A port V feed line 1-10 and a port H feed line 1-11 are formed on two adjacent sides of the radiation patch 1-9. The port V feed line 1-10 and the port H feed line 1-11 are respectively electrically connected to a second feed probe 1-13 on the corresponding first high-temperature co-fired ceramic substrate 1-1 through a first feed probe 1-12. The second feed probes 1-13 are respectively located at the axial center positions of the port V equivalent coaxial line 1-6 and the port H equivalent coaxial line 1-7. A third high-temperature co-fired ceramic substrate 1-14 is formed on the upper surface of the second high-temperature co-fired ceramic substrate 1-8 outside the radiation patch 1-9. Air holes are formed in the third high-temperature co-fired ceramic substrate 1-14. A fourth high-temperature co-fired ceramic substrate 1-15 is formed on the upper surface of the third high-temperature co-fired ceramic substrate 1-14. A parasitic patch 1-16 is formed on the lower surface of the fourth high-temperature co-fired ceramic substrate 1-15. The second high-temperature co-fired ceramic substrate 1-8, the fourth high-temperature co-fired ceramic substrate 1-15 and the air holes enclose an air cavity 1-17. The radiation patch 1-9 and the parasitic patch 1-16 are located in the air cavity 1-17.

[0038] Further, as Figure 2 shown, a metal ring 1-18 is formed on the upper surface of the fourth high-temperature co-fired ceramic substrate 1-15, and the metal ring 1-18 does not overlap with the air cavity 1-17 in the vertical projection direction. The metal ring 1-18 is connected to the first ground layer 1-2 through a first metallized via 1-19. Solder pads 1-20 are respectively formed in the port V via 1-3 and the port H via 1-4. The solder pads 1-20 are electrically connected to the lower ends of the second feed probes 1-13. In addition, fromFigure 2 It can be seen that the diameter of the pad 1-20 is smaller than the diameters of the port V vias 1-3 and the port H vias 1-4.

[0039] Furthermore, as Figure 1 shown, the RF front-end part includes a fifth high-temperature co-fired ceramic substrate 2-1. A sixth high-temperature co-fired ceramic substrate 2-2 is formed on the upper surface of the fifth high-temperature co-fired ceramic substrate 2-1. A third feeding probe 2-3 is formed in the fifth high-temperature co-fired ceramic substrate 2-1 and the sixth high-temperature co-fired ceramic substrate 2-2. The RF front-end part is electrically connected to the pad 1-20 on the antenna part through the third feeding probe 2-3.

[0040] The structures of two patches in the array unit are as Figures 3a - 3b shown. The upper-layer parasitic patch is a pure square with a size of 3.7×3.7 mm2; the lower-layer radiation patch is directly connected to the feeding microstrip line, and the size of the patch part is 3.2×3.2 mm2. The structure of the lower-layer patch is not centrosymmetric, which is disadvantageous for maintaining a higher isolation degree of the dual-polarization antenna ports. When the port H of the unit works, the port V is in a passive matching state, but the feeding microstrip line corresponding to the port V will perturb the working current on the patch, causing the current originally in the polarization H direction to generate a component in the orthogonal direction (polarization V direction) and there is no equal-amplitude current in the opposite direction to cancel it, resulting in energy flowing from the patch to the port V, thus causing the isolation degree of the unit's orthogonal polarization ports to decrease. When the port V works, a similar phenomenon will also occur.

[0041] The simulation results of the active standing wave ratio of the dual-polarization antenna unit are as Figure 4 shown. In the frequency band of 14.5~17.4 GHz, the active standing wave ratios of the port H and the port V in the unit are both less than 2 in broadside radiation; in the frequency band of 15.2~16.8 GHz, the active standing wave ratios of the port H and the port V are both less than 1.5. It can be seen that the antenna array unit has good impedance matching performance. The fractional impedance bandwidth with the active standing wave ratio less than 2 as the standard is 18.1%. Compared with the common patch antennas designed with low-dielectric-constant media, its impedance bandwidth is not inferior. Since in the simulation model, the antenna unit structure is completely symmetric about the diagonal of the unit grid, the simulation results of the port H and the port V have good consistency. The simulation results of the isolation degree between the port H and the port V are as Figure 5 shown, and it is greater than 16 dB in the working frequency band, which is lower compared with the dual-polarization patch array unit introduced in the second chapter. This is a trade-off consideration of the antenna performance and design complexity under the background of the high-temperature co-fired ceramic process.

[0042] By using the four-point feeding method, the adverse effects of the above phenomenon on the port isolation can be improved. The essence of the four-point feeding method is differential feeding. This application mainly improves the feeding structure of the antenna radiation patch. The improved radiation patch is as shown in Figures 6a - 6c . As can be seen from the figure, in addition to the original two feeding points H and V on the radiation patch, two new feeding points H' and V' are added. Among them, the feeding points H and H' are connected to the polarization port H of the antenna, and the feeding points V and V' are connected to the polarization port V of the antenna. Figure 6b shows the feeding point phases and the feeding network. The feeding points H and H' are for the same polarization feeding of the array unit, but the feeding phases differ by 180°, and the same is true for the feeding points V and V'. The four-point feeding method requires designing an additional feeding network to connect the feeding ports and the feeding points. The feeding network mainly includes a one-to-two power divider and a 180° phase shifter line. Since the size of the phased array unit is limited, the feeding network needs to be designed very compactly, which will greatly increase the complexity of the antenna structure.

[0043] Furthermore, as shown in Figure 6a , a V' feeding line 1-21 is formed on the side of the radiation patch 1-9 corresponding to the port V feeding line 1-10, and an H' feeding line 1-22 is formed on the side of the radiation patch 1-9 corresponding to the port H feeding line 1-11. The V' feeding line 1-21 is connected to the first feeding probe 1-12 connected to the port V feeding line 1-10 through the feeding probe in the second high-temperature co-fired ceramic substrate. The H' feeding line 1-22 is connected to the first feeding probe 1-12 connected to the port H feeding line 1-11 through the feeding probe in the second high-temperature co-fired ceramic substrate. The first feeding probe 1-12 is electrically connected to the second feeding probe 1-13 on the corresponding first high-temperature co-fired ceramic substrate respectively.

[0044] The four-point feeding method can not only improve the isolation degree of the orthogonal polarization ports of the antenna, but also reduce the cross-polarization ratio of the antenna. The principle is as follows: As can be seen from Figure 6c , when the port H of the unit works, the port V is in a passive matching state. The feeding points H and H' excite the transverse current radiation, while the feeding points V and V' will induce a small part of the longitudinal current. Since the four points of the feeding points V, V', H, and H' are centrosymmetric about the center point of the patch, the amplitude and phase of the longitudinal current flowing from the feeding point H (or H') to the points V and V' are similar, but the directions are opposite in three-dimensional space. The radiation energy generated by the longitudinal currents with opposite directions will cancel each other out, so the cross-polarization ratio of the antenna will be maintained at a low level; the energy flowing into the feeding points V (or V') from the feeding points H and H' has similar amplitudes and opposite phases, and the energy flowing into the feeding points V and V' will be inversely superimposed and canceled at the port V after passing through the phase shifter line and the power divider, so the antenna has a high port isolation degree. The same is true when the port V of the unit works.

[0045] The simulation results of the orthogonal polarization port isolation of the four-point feeding unit are as follows Figure 7 shown. When simulating, the influence of the phase shifter and the power divider is not considered. Instead, wave ports are directly set at the positions of the four feeding points, and the phase factors are directly added to the S parameters of the four feeding points for calculation. It can be seen that the port isolation of the four-point feeding unit is greater than 40 dB in the frequency band of 15 - 17 GHz, showing a significant improvement compared with the two-point feeding unit.

[0046] The simulation results of the actual gain and cross-polarization ratio of the four-point feeding unit are as follows Figure 8 shown. When simulating, wave ports are directly set at the positions of the four feeding points for feeding. As can be seen from the figure, the actual gain of the array unit is 4.44 - 4.83 dBi in the frequency band of 15.5 - 16.5 GHz, and the cross-polarization ratio is less than -40 dB. The gain of the array unit slightly decreases in the high-frequency part because the array unit does not optimize the impedance matching for the existing structure, and the impedance matching in the high-frequency part deteriorates slightly. The above simulation results of the four-point feeding unit illustrate that this design method can indeed improve the port isolation and cross-polarization ratio of the array unit described above.

[0047] In addition, the present invention also discloses a high-isolation broadband dual-polarized antenna array based on high-temperature co-fired ceramics, including a plurality of the high-isolation broadband dual-polarized antenna units arranged in an array. The structure of the antenna unit in the antenna array is the same as that of the above antenna unit, so it will not be elaborated here.

Claims

1. A high isolation broadband dual-polarized antenna element based on high temperature co-fired ceramics, characterized in that: It includes an antenna part (1) and a radio frequency front-end part (2), and uses pads (1-20) and feeding probes to connect the two parts of the link together to form the antenna unit; The antenna part (1) includes a first high-temperature co-fired ceramic substrate (1-1). A first ground layer (1-2) is formed at the bottom of the first high-temperature co-fired ceramic substrate (1-1). Two port mounting vias are formed on the first ground layer (1-2), which are divided into a port V via (1-3) and a port H via (1-4). A second ground layer (1-23) is formed on the upper surface of the first high-temperature co-fired ceramic substrate (1-1). Two through holes (1-5) are formed at positions corresponding to the port mounting vias on the second ground layer (1-23). Circular port V equivalent coaxial lines (1-6) and port H equivalent coaxial lines (1-7) penetrating the upper and lower surfaces are formed inside the first high-temperature co-fired ceramic substrate (1-1) around the outer circumference of the port V via (1-3) and the port H via (1-4). The upper and lower ends of the port V equivalent coaxial line (1-6) and the port H equivalent coaxial line (1-7) are respectively connected to the second ground layer (1-23) and the first ground layer (1-2). A second high-temperature co-fired ceramic substrate (1-8) is formed on the upper surface of the second ground layer (1-23). A radiation patch (1-9) is formed on the upper surface of the second high-temperature co-fired ceramic substrate (1-8). A port V feed line (1-10) and a port H feed line (1-11) are formed on two adjacent sides of the radiation patch (1-9). The port V feed line (1-10) and the port H feed line (1-11) are respectively electrically connected to a second feeding probe (1-13) on the corresponding first high-temperature co-fired ceramic substrate (1-1) through a first feeding probe (1-12). The second feeding probes (1-13) are respectively located at the axial center positions of the port V equivalent coaxial line (1-6) and the port H equivalent coaxial line (1-7). A third high-temperature co-fired ceramic substrate (1-14) is formed on the upper surface of the second high-temperature co-fired ceramic substrate (1-8) outside the radiation patch (1-9). Air holes are formed on the third high-temperature co-fired ceramic substrate (1-14). A fourth high-temperature co-fired ceramic substrate (1-15) is formed on the upper surface of the third high-temperature co-fired ceramic substrate (1-14). A parasitic patch (1-16) is formed on the lower surface of the fourth high-temperature co-fired ceramic substrate (1-15). The second high-temperature co-fired ceramic substrate (1-8), the fourth high-temperature co-fired ceramic substrate (1-15) and the air holes enclose an air cavity (1-17). The radiation patch (1-9) and the parasitic patch (1-16) are located inside the air cavity (1-17).

2. The high isolation broadband dual-polarized antenna element based on high-temperature co-fired ceramics according to claim 1, characterized in that: Both the antenna part (1) and the radio frequency front-end part (2) are designed using high-temperature co-fired ceramic substrates.

3. The high isolation broadband dual-polarized antenna element based on high temperature co-fired ceramics according to claim 1, characterized in that: A metal ring (1-18) is formed on the upper surface of the fourth high-temperature co-fired ceramic substrate (1-15), and the metal ring (1-18) does not overlap with the air cavity (1-17) in the vertical projection direction. The metal ring (1-18) is connected to the first ground layer (1-2) through a first metallized via (1-19).

4. The high isolation broadband dual-polarized antenna element based on high temperature co-fired ceramics according to claim 1, characterized in that: Pads (1-20) are respectively formed in the port V via (1-3) and the port H via (1-4), and the pads (1-20) are electrically connected to the lower ends of the second feeding probes (1-13).

5. The high isolation broadband dual-polarized antenna element based on high-temperature co-fired ceramics according to claim 4, wherein: The diameter of the pad (1-20) is smaller than the diameters of the port V via (1-3) and the port H via (1-4).

6. The high isolation broadband dual-polarized antenna element based on high temperature co-fired ceramics according to claim 1, wherein: The sum of the thicknesses of the first high-temperature co-fired ceramic substrate (1-1) and the second high-temperature co-fired ceramic substrate (1-8) is 0.625 mm, the thickness of the third high-temperature co-fired ceramic substrate (1-14) is 0.875 mm, and the thickness of the fourth high-temperature co-fired ceramic substrate (1-15) is 0.5 mm.

7. The high isolation broadband dual-polarized antenna element based on high temperature co-fired ceramics according to claim 1, wherein: The radio frequency front-end part includes a fifth high-temperature co-fired ceramic substrate (2-1). A sixth high-temperature co-fired ceramic substrate (2-2) is formed on the upper surface of the fifth high-temperature co-fired ceramic substrate (2-1). A third feeding probe (2-3) is formed in the fifth high-temperature co-fired ceramic substrate (2-1) and the sixth high-temperature co-fired ceramic substrate (2-2). The radio frequency front-end part is electrically connected to the pads (1-20) on the antenna part through the third feeding probe (2-3).

8. The high isolation broadband dual-polarized antenna element based on high-temperature co-fired ceramics according to claim 1, characterized in that: A V' feeder line (1-21) is formed on the side of the radiation patch (1-9) corresponding to the port V feeder line (1-10), and an H' feeder line (1-22) is formed on the side of the radiation patch (1-9) corresponding to the port H feeder line (1-11). The V' feeder line (1-21) is connected to the first feeding probe (1-12) connected to the port V feeder line (1-10) through a feeding probe in the second high-temperature co-fired ceramic substrate, and the H' feeder line (1-22) is connected to the first feeding probe (1-12) connected to the port H feeder line (1-11) through a feeding probe in the second high-temperature co-fired ceramic substrate. The first feeding probe (1-12) is electrically connected to the second feeding probe (1-13) on the corresponding first high-temperature co-fired ceramic substrate respectively.

9. A high isolation broadband dual-polarized antenna array based on high-temperature co-fired ceramics, characterized in that: It includes a plurality of high isolation broadband dual-polarized antenna units as described in any one of claims 1-8 arranged in an array.

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