Method of manufacturing a showerhead, showerhead, and plasma processing apparatus

Abstract

The present application provides a manufacturing method of a shower head capable of suppressing generation of cracks around a sleeve when used at high temperature, a shower head, and a plasma processing apparatus. A manufacturing method of a shower head that discharges a processing gas for generating plasma into a plasma generation space in a chamber in which a substrate is arranged and plasma is generated in a plasma processing apparatus that performs processing using plasma on a substrate includes: a step of preparing a metal base material that constitutes a portion of a main body portion having a gas discharge hole and has a sleeve mounting hole; a step of mounting a sleeve having a gas discharge hole in the inside thereof to the sleeve mounting hole of the base material; a step of performing HIP processing on the base material and the sleeve to HIP join the sleeve to the base material; and a step of forming a ceramic plating film on a chamber side surface of the base material and a chamber side surface of the sleeve.

Description

Technical Field

[0001] This disclosure relates to a method for manufacturing a shower head, a shower head, and a plasma treatment apparatus. Background Technology

[0002] In the manufacturing process of flat panel displays (FPDs), micro-processing is performed by plasma etching or other plasma treatments on a specified film formed on a glass substrate that is being processed, thereby forming electrodes, wiring, etc.

[0003] In a plasma processing apparatus that performs such plasma processing, a substrate is placed on a mounting platform disposed within a chamber, and a processing gas is ejected from a spray head disposed above the mounting platform into the chamber, thereby generating plasma within the chamber.

[0004] Spray heads are made of metals such as aluminum and are exposed to the treated gases and plasma, so various technologies have been proposed to inhibit the corrosion of spray heads.

[0005] For example, Patent Document 1 proposes the following technique: a recess is formed on the outlet side of the gas ejection hole of the substrate provided in the spray head, a cylindrical sleeve is fixed to the recess, and a plasma-resistant coating is formed to cover the surface of the plasma generation space side of the substrate.

[0006] Existing technical documents

[0007] Patent documents

[0008] Patent Document 1: Japanese Patent Application Publication No. 2017-22356 Summary of the Invention

[0009] The problem the invention aims to solve

[0010] This disclosure provides a method for manufacturing a spray head capable of suppressing cracks around the sleeve during high-temperature use, a spray head, and a plasma treatment apparatus.

[0011] Solution for solving the problem

[0012] The present disclosure discloses a method for manufacturing a spray head that sprays a processing gas for generating plasma into a plasma generation space within a chamber where the substrate is disposed and plasma is generated, in a plasma processing apparatus for performing plasma processing on a substrate. The spray head comprises: a main body having a plurality of gas ejection holes for ejecting the processing gas; and a gas diffusion space disposed within the main body, into which the processing gas is introduced and in communication with the gas ejection holes. The method for manufacturing the spray head includes the following steps: preparing a metal substrate, the metal substrate constituting the portion of the main body having the gas ejection holes and having a plurality of sleeve mounting holes; mounting sleeves into each of the sleeve mounting holes of the substrate, the sleeves having the gas ejection holes inside; performing HIP treatment on the substrate and the sleeves to HIP-bond the sleeves to the substrate; and forming a ceramic spray-coated film on the plasma generation space side surface of the substrate and the plasma generation space side surface of the sleeves.

[0013] The effects of the invention

[0014] According to this disclosure, a method for manufacturing a spray head capable of suppressing cracks around the sleeve during high-temperature use, a spray head, and a plasma treatment apparatus are provided. Attached Figure Description

[0015] Figure 1 This is a cross-sectional view showing the plasma processing apparatus of the first embodiment.

[0016] Figure 2 It means Figure 1 A partial view of the gas ejection section of the main body of the spray head of the plasma treatment device.

[0017] Figure 3 This is a process cross-sectional view used to illustrate the manufacturing method of the spray head.

[0018] Figure 4 This diagram illustrates the cracks that occur when a gap forms between the sleeve and the substrate.

[0019] Figure 5 This diagram illustrates the situation where there is a height difference at the interface between the gas diffusion space side and the chamber side of the substrate and sleeve.

[0020] Figure 6 This is a partial view showing the gas ejection section of the main body of the spray head constituting the plasma processing apparatus of the second embodiment.

[0021] Figure 7 It means targeting Figure 2The figure shows the results of heat resistance tests on the gas ejection section of the spray head, comparing the structure obtained by bonding the sleeve as before and the structure obtained by HIP bonding.

[0022] Figure 8 This indicates that the sleeve is relative to... Figure 6 The figure shows the results of heat resistance tests on the gas ejection section of the spray head, which was bonded as usual and the structure obtained by HIP bonding. Detailed Implementation

[0023] The embodiments will now be described with reference to the accompanying drawings.

[0024] <First Embodiment>

[0025] First, the first embodiment will be described. Figure 1 This is a cross-sectional view showing the plasma processing apparatus of the first embodiment. Figure 1 The plasma processing apparatus shown is configured as an inductively coupled plasma processing apparatus, which can be preferably applied to etching metal films when forming thin-film transistors on rectangular substrates, such as glass substrates for FPDs.

[0026] The inductively coupled plasma processing device has a cylindrical, hermetically sealed main body container 1, which is made of a conductive material, such as aluminum with an anodized inner wall. The main body container 1 is assembled in a disassembleable manner and electrically grounded using a grounding wire 1a.

[0027] The main container 1 is divided vertically by a rectangular spray head 2 formed in an insulated manner from the main container 1. The upper part is an antenna container 3 that divides the antenna chamber, and the lower part is a chamber 4 that divides the processing chamber, which has a plasma generation space S. The spray head 2 functions as a metal window, forming the top wall of the chamber 4. The spray head 2, which serves as a metal window, is mainly made of a non-magnetic and conductive metal, such as aluminum (Al) (Al or Al alloy).

[0028] A support frame 5 is provided between the side wall 3a of the antenna container 3 and the side wall 4a of the chamber 4. The support frame 5 protrudes towards the inside of the main container 1 and supports the spray head 2. The support frame 5 is made of a conductive material, preferably a metal such as aluminum. The spray head 2 is configured to be divided into multiple parts by means of insulating members 7. Moreover, the multiple parts of the spray head 2 are suspended from the top of the main container 1 by means of multiple hanging rods (not shown).

[0029] Each segment of the spray head 2 has a main body 50 and a gas diffusion space (buffer) 51 disposed inside the main body 50. The main body 50 has a base 52 and a gas ejection section 53, which has multiple gas ejection holes 54 for ejecting processing gas from the gas diffusion space 51 into the plasma generation space S in the chamber 4. Processing gas is introduced into the gas diffusion space 51 from the processing gas supply mechanism 20 via a gas supply pipe 21. The gas diffusion space 51 communicates with the multiple gas ejection holes 54, and processing gas is ejected from the gas diffusion space 51 through the multiple gas ejection holes 54. Furthermore, the base 52 and the gas ejection section 53 can be either integrated or separate. When they are separate, the gas ejection section 53 is configured as a spray plate.

[0030] The high-frequency antenna 13 is disposed within the antenna container 3 above the spray head 2, facing the side opposite to the plasma generation space S side. The high-frequency antenna 13 is made of a conductive material, such as copper, and is configured to be separated from the spray head 2 by spacers (not shown) made of insulating members, forming, for example, a vortex shape in the plane corresponding to the rectangular shape of the spray head 2. Alternatively, it can be formed in a ring shape. The antenna wire constituting the high-frequency antenna 13 can be one or multiple wires.

[0031] The first high-frequency power supply 18 is connected to the high-frequency antenna 13 via power supply line 16 and matching device 17. Furthermore, during plasma processing, high-frequency power of, for example, 13.56 MHz is supplied to the high-frequency antenna 13 via power supply line 16 extending from the first high-frequency power supply 18. As a result, as described later, an induced electric field is formed within the chamber 4 by the loop current induced in the spray head 2, which functions as a metal window. Moreover, using this induced electric field, the processing gas supplied from the spray head 2 is plasma-generated in the plasma generation space S directly below the spray head 2 within the chamber 4, generating inductively coupled plasma. In other words, the high-frequency antenna 13 and the first high-frequency power supply 18 function as a plasma generation mechanism.

[0032] A mounting stage 23 for placing a rectangular FPD glass substrate (hereinafter referred to simply as "substrate") G, which serves as the substrate to be processed, is fixed to the bottom of the chamber 4 by means of an insulating member 24, facing the high-frequency antenna 13 across the spray head. The mounting stage 23 is made of a conductive material, such as aluminum with an anodized surface. The substrate G placed on the mounting stage 23 is held in place by an electrostatic chuck (not shown).

[0033] An insulating shielding ring 25a is provided on the upper periphery of the mounting stage 23, and an insulating ring 25b is provided on the circumferential surface of the mounting stage 23. A lifting pin 26 for feeding and feeding the substrate G passes through the bottom wall of the main body container 1 and the insulating member 24 and passes through the mounting stage 23. The lifting pin 26 is driven to lift by a lifting mechanism (not shown) provided outside the main body container 1, thereby feeding and feeding the substrate G.

[0034] A matching device 28 and a second high-frequency power supply 29 are provided outside the main container 1. The second high-frequency power supply 29 is connected to the stage 23 via the matching device 28 using a power supply line 28a. This second high-frequency power supply 29 applies high-frequency power, such as a 3.2 MHz frequency, to the stage 23 for biasing during plasma processing. The self-bias voltage generated by this high-frequency power effectively introduces ions from the plasma generated within the chamber 4 into the substrate G.

[0035] In addition, in order to control the temperature of the substrate G, a temperature control mechanism and a temperature sensor (not shown) consisting of a heating unit such as a heater and a refrigerant flow path are provided in the mounting stage 23. The piping and wiring for these mechanisms and components are all routed out of the main body container 1 through the bottom surface of the main body container 1 and the opening 1b of the insulating member 24.

[0036] The side wall 4a of the chamber 4 is provided with an inlet / outlet 27a for feeding in and out the substrate G, and a gate valve 27 for opening and closing thereon. In addition, an exhaust device 30, including a vacuum pump, is connected to the bottom of the chamber 4 via an exhaust pipe 31. The chamber 4 is vented using the exhaust device 30, and a specified vacuum atmosphere (e.g., 1.33 Pa) is set and maintained inside the chamber 4 during plasma processing.

[0037] A small space (not shown) is formed on the back side of the substrate G placed on the mounting stage 23, and a He gas flow path 41 is provided therein for supplying He gas at a certain pressure as a heat-conducting gas. By supplying the heat-conducting gas to the back side of the substrate G in this way, the temperature rise and temperature change caused by plasma treatment of the substrate G under vacuum can be suppressed.

[0038] The inductively coupled plasma processing apparatus also includes a control unit 100. The control unit 100 includes a computer, comprising a main control unit consisting of a CPU that controls the various components of the plasma processing apparatus, an input device, an output device, a display device, and a storage device. The storage device stores parameters for various processes performed by the plasma processing apparatus. Additionally, a storage medium storing programs for controlling the processes performed by the plasma processing apparatus, i.e., processing procedures, is installed in the storage device. The main control unit controls the plasma processing apparatus by calling a predetermined processing procedure stored in the storage medium, and then, based on this processing procedure, causes the plasma processing apparatus to perform the predetermined processing.

[0039] Next, we will provide a more detailed description of the spray head 2.

[0040] Inductively coupled plasma is plasma generated by directing a high-frequency current to a high-frequency antenna, thereby generating a magnetic field around the antenna. The induced electric field generated by this magnetic field induces a high-frequency discharge, thus generating plasma. When using a single metal window as the top wall of the chamber 4, no plasma is generated because the eddy currents and magnetic field do not reach the back side of the metal window, i.e., the plasma generation space S side, for the high-frequency antenna 13, which is arranged to rotate circumferentially in-plane. Therefore, in this embodiment, to ensure that the magnetic field and eddy current generated by the high-frequency current flowing to the high-frequency antenna 13 reach the plasma generation space S side, the spray head 2, which functions as a metal window, is constructed by dividing it into multiple parts using an insulating member 7.

[0041] As described above, the processing gas is introduced from the processing gas supply mechanism 20 into the spray head 2 via the gas supply pipe 21. Then, the introduced processing gas is ejected into the plasma generation space S within the chamber 4 through the gas diffusion space 51 and multiple gas ejection holes 54. The spray head 2 can become high-temperature due to its own temperature regulation and heat conduction from the plasma, but the spray head 2 of this embodiment has heat resistance at high temperatures. Specifically, it has sufficient heat resistance even at a high temperature of 200°C.

[0042] Figure 2 It means Figure 1 A partial view of the gas ejection section of the main body of the spray head of the plasma treatment device.

[0043] The main body 50, which includes the gas ejection section 53, has a substrate 61, a plurality of sleeves 62, a first spray coating film 63, and a second spray coating film 64.

[0044] The substrate 61 is made of a non-magnetic metal, preferably formed of an Al material (Al or an Al alloy). Examples of Al materials include, for instance, the JIS 6000 series. When the substrate 61 is made of Al material, an anodized coating 61a is provided on the side as needed.

[0045] Multiple sleeves 62 are formed of corrosion-resistant metals such as stainless steel and nickel-based alloys like Hastelloy, and are configured as stepped cylindrical shapes, embedded in corresponding recesses (sleeve mounting holes) formed in the substrate 61. Each sleeve 62 has a gas ejection hole 54 forming inside, extending from the gas diffusion space 51 to the plasma generation space S.

[0046] The gas ejection port 54 has a large-diameter portion 54a on the gas diffusion space 51 side and a small-diameter portion 54b on the plasma generation space S side. Furthermore, the lower end of the small-diameter portion 54b forms an opening 54c facing the plasma generation space S. The plasma generation space S side is designated as the small-diameter portion 54b to prevent plasma from entering the interior of the gas ejection port 54. The diameter of the small-diameter portion 54b is set to, for example, 0.5 mm to 1 mm.

[0047] The sleeve 62 is joined to the substrate 61 by hot isostatic pressing (HIP bonding), and the sleeve 62 is tightly fitted to the substrate 61 without gaps under compressive stress between the sleeve 62 and the substrate 61.

[0048] In addition, as shown in the figure, preferably the surfaces of the gas diffusion space 51 side of the substrate 61 and the sleeve 62, as well as the surfaces of the plasma generation space S side, are flush.

[0049] The first spray-coated film 63 is formed by spraying a material that is corrosion-resistant to the process gas onto the surface of the substrate 61 on the gas diffusion space 51 side. The first spray-coated film 63 is preferably impregnated with an impregnating material.

[0050] The first spray-coated film 63 is used to protect the substrate 61 when a gas with higher corrosivity than the substrate 61 is used as the processing gas. The first spray-coated film 63 is made of ceramic. Alumina (Al2O3) and zirconium oxide (ZrO2) are preferred ceramics constituting the first spray-coated film 63. The Al2O3 spray-coated film is effective when the spray head 2 rises to about 200°C, for example, during Al etching processing using Cl2 gas. The thickness of the first spray-coated film 63 is preferably in the range of 80 μm to 200 μm. Furthermore, the first spray-coated film 63 may be omitted if the possibility of the processing gas corroding the substrate 61 is low.

[0051] The second spray-coated film 64 is formed by spraying a material with plasma resistance relative to the plasma of the process gas onto the surface of the plasma generation space S side of the substrate 61. The second spray-coated film 64 is preferably impregnated with an impregnation material.

[0052] The second spray-coated film 64 is used relative to the plasma-protected substrate 61. The second spray-coated film 64 is also made of ceramic. Preferably, the second spray-coated film 64 is a yttrium oxide (Y₂O₃) spray-coated film or a Y-Al-Si-O hybrid spray-coated film (a mixed spray-coated film of yttrium oxide, alumina, and silicon dioxide (or silicon nitride), etc., which contains yttrium oxide. Depending on the processing gas used, an Al₂O₃ spray-coated film may also be used. Furthermore, by impregnating the second spray-coated film 64 with an impregnation material, the pores present in the spray-coated film are sealed, which further improves plasma resistance and also improves resistance to pinhole corrosion.

[0053] The second spray-coated film 64 is preferably a quasi-dense spray-coated film with high surface plasma resistance. A quasi-dense spray-coated film refers to a spray-coated film with a lower porosity than a typical spray-coated film; for example, the porosity of a typical coating is 3% to 5%, while that of a quasi-dense spray-coated film is 2% to 3%. By performing quasi-dense spraying, plasma resistance can be further improved. Furthermore, by combining the quasi-dense nature of the spray-coated film with the impregnation material, plasma resistance can be further improved. The thickness of the second spray-coated film 64 is preferably in the range of 150 μm to 500 μm.

[0054] When the temperature of the spray head 2 rises to a high temperature of 200°C or higher, the impregnating material used to impregnate the first spray coating 63 and the second spray coating 64 is preferably a heat-resistant impregnating material. Furthermore, a resin impregnating material with good filling properties that can penetrate into the quasi-dense coating is preferred. From this perspective, a heat-resistant epoxy resin with excellent heat resistance and corrosion resistance and high filling properties is preferred as the impregnating material.

[0055] Next, the processing operation of performing plasma processing, such as plasma etching, on substrate G using an inductively coupled plasma processing apparatus configured as described above will be explained.

[0056] First, with gate valve 27 open, a substrate G with a predetermined film formed on it is fed into chamber 4 through inlet / outlet 27a using a conveying mechanism (not shown) and placed on the mounting surface of mounting stage 23. Next, an electrostatic chuck (not shown) is used to fix the substrate G onto mounting stage 23. Then, while evacuating chamber 4 using exhaust device 30, a pressure atmosphere of approximately 0.66 Pa to 26.6 Pa is maintained inside chamber 4 using a pressure control valve (not shown). In this state, processing gas is supplied from processing gas supply mechanism 20 to a spray head 2 with a metal window via gas supply pipe 21, causing the processing gas to spray out of chamber 4 into the chamber in a spray pattern. He gas, used as a heat-conducting gas, is supplied to the space on the back side of substrate G via He gas flow path 41.

[0057] At this time, if the temperature of the main container 1 and the base part 52 is adjusted to a high temperature and plasma is generated, the temperature of the spray head 2 will become a high temperature of 200°C.

[0058] Next, a high frequency of, for example, 13.56 MHz is applied from the high-frequency power supply 18 to the high-frequency antenna 13, thereby generating a uniform induced electric field within the chamber 4 using the spray head 2, which functions as a metal window. Using this generated induced electric field, the plasma generation space S of the processing gas within the chamber 4 is plasma-generated, generating a high-density inductively coupled plasma. This plasma is then used to perform plasma etching on the substrate G.

[0059] Next, the manufacturing method of the above-mentioned spray head 2 will be explained.

[0060] Figure 3 This is a process cross-sectional view used to illustrate the manufacturing method of the spray head. When manufacturing spray head 2, firstly, as... Figure 3 As shown in (a), a substrate 61 with a sleeve mounting hole 61b is prepared (step 1). Next, a sleeve 62 is installed in the sleeve mounting hole 61b of the substrate 61 (step 2). Figure 3 (b)). Next, the substrate 61 and the installed sleeve 62 are subjected to HIP treatment, and the sleeve 62 is HIP bonded to the substrate 61 (step 3); Figure 3 (c)). After this, grinding or polishing is performed to make the surfaces of the gas diffusion space 51 side of the substrate 61 and the sleeve 62, as well as the surfaces of the plasma generation space S side of the substrate 61 and the sleeve 62, flush (step 4). Figure 3 (d)). After this, a first spray-coated film 63 is formed on the gas diffusion space side of the substrate 61 and the sleeve 62, and a second spray-coated film 64 is formed on the plasma generation space S side of the substrate 61 and the sleeve 62 (step 5); Figure 3 (e)). When forming the anodized coating 61a using anodizing treatment, it is preferable to do so after the sleeve 62 has been HIP bonded.

[0061] HIP treatment refers to a process in which uniform pressure and high temperature are applied simultaneously to the object to be treated, using an inert gas such as Ar as the pressure medium. In this embodiment, when the substrate 61 is made of Al material, HIP treatment is preferably performed at a pressure of 50 MPa to 200 MPa and a temperature of 300°C to 550°C. When the substrate 61 is made of aluminum such as 6000 series aluminum, it begins to soften at around 300°C, and its solution temperature is 430°C to 530°C, so HIP treatment can be appropriately performed at a temperature of 300°C to 550°C. More preferably, the temperature range is 400°C to 450°C. Furthermore, regarding pressure, a good HIP effect can be obtained at a pressure of 100 MPa to 150 MPa.

[0062] Thus, the sleeve 62 is HIP-bonded to the substrate 61. That is, through HIP treatment, compressive stress is applied between the sleeve 62 and the substrate 61, and the sleeve 62 is tightly sealed to the substrate 61 without gaps.

[0063] The HIP treatment is performed at high temperatures (e.g., above 300°C), so even if the operating temperature of the spray head 2 is above 200°C, the compressive stress between the sleeve 62 and the substrate 61 will remain, maintaining a gapless, tight seal. Therefore, high heat resistance can be maintained. In this embodiment, the sleeve 62 is made of metal, thus exhibiting high thermal shock resistance; as long as the HIP effect remains, high heat resistance up to approximately 300°C can be achieved.

[0064] When the sleeve is embedded in the substrate and bonded as in Patent Document 1, a gap can easily form between the sleeve and the substrate when the temperature of the spray head 2 reaches 200°C. For example... Figure 4 As shown, when a gap 66 is formed between the sleeve 62 and the substrate 61, cracks 67 are easily generated in the portions of the first sprayed film 63 and the second sprayed film 64 corresponding to the interface between the sleeve 62 and the substrate 61. In addition, corrosion occurs in the portion of the interface between the sleeve 62 and the substrate 61 on the substrate 61 side.

[0065] In contrast, in this embodiment, the sleeve 62 is HIP bonded to the substrate 61, and even when used at high temperatures such as 200°C, the sleeve 62 and the substrate 61 are tightly sealed without gaps, thus suppressing the formation of cracks in the first spray coating 63 and the second spray coating 64, and reducing the likelihood of corrosion problems.

[0066] In addition, such as Figure 5 As shown, when a height difference exists at the interface between the gas diffusion space 51 side and the plasma generation space S side of the substrate 61 and sleeve 62, the film quality at the portion corresponding to the height difference between the first sprayed film 63 and the second sprayed film 64 differs from that of other portions, potentially leading to cracking. Therefore, it is preferable to perform a grinding process to make the surfaces of the substrate 61 and sleeve 62 on the gas diffusion space 51 side and the plasma generation space S side flush. This prevents a height difference from occurring at the interface between the first sprayed film 63 and the second sprayed film 64 and the substrate 61 and sleeve 62, thereby improving the crack suppression effect.

[0067] However, such grinding is not necessary in cases where cracks in the sprayed film can be adequately suppressed simply by joining the sleeves 62HIP, or in cases where the height difference is small.

[0068] The first spray-coated film 63 and the second spray-coated film 64 are formed by blowing and attaching particles of the aforementioned material, which are in a molten or nearly molten state, onto the surfaces of the substrate 61 and the sleeve 62 on the gas diffusion space 51 side and the plasma generation space S side. As mentioned above, the first spray-coated film 63 is not necessary.

[0069] When forming the first spray-coated film 63 and the second spray-coated film 64, if the operating temperature is 200°C, spraying can be performed by heating the substrate to 150°C to 250°C, which is close to the operating temperature, making the first spray-coated film 63 and the second spray-coated film 64 less prone to cracking.

[0070] Since the sleeve 62 and the substrate 61 need to be sealed together using HIP treatment, the HIP treatment is performed without the anodized coating 61a when forming the anodized coating 61a. The anodized coating 61a is formed after the HIP treatment. Furthermore, the first spray-coated film 63 and the second spray-coated film 64 need to be formed directly on the substrate 61; therefore, it is desirable to mask these surfaces during anodizing. Additionally, without forming the first spray-coated film 63, the surface of the substrate 61 on the gas diffusion space 51 side can be in a state where the anodized coating 61a is formed.

[0071] <Second Implementation>

[0072] The second implementation method will now be described.

[0073] In this embodiment, the basic structure of the plasma processing device is the same as that of the first embodiment, except that the structure of the gas ejection section of the spray head is different from that of the first embodiment.

[0074] Figure 6 This is a partial view showing the gas ejection section of the main body of the spray head constituting the plasma processing apparatus of the second embodiment.

[0075] The gas ejection section 53' includes: a substrate 61, a plurality of sleeves 62', a first spray-coated film 63, and a second spray-coated film 64. The substrate 61, the first spray-coated film 63, and the second spray-coated film 64 are configured in the same manner as in the first embodiment. Similar to the first embodiment, if the possibility of gas corrosion of the substrate 61 is low, the first spray-coated film 63 may be omitted.

[0076] The sleeve 62′ is made of ceramic such as Al2O3 and is cylindrical, fitting into a corresponding recess (sleeve mounting hole) formed in the substrate 61. A gas ejection hole 54′ is formed inside each sleeve 62′, extending from the gas diffusion space 51 to the plasma generation space S. Because ceramic is difficult to process, the sleeve 62′ differs from the sleeve 62 of the first embodiment in that it is basically straight, and the gas ejection hole 54′ is also straight. The diameter of the gas ejection hole 54′ is set to, for example, 0.5 mm to 1 mm. A groove 62′a is formed around the center of the outer periphery of the sleeve 62′.

[0077] The sleeve 62' is joined to the substrate 61 using a HIP process (HIP bonding). Under compressive stress acting between the sleeve 62' and the substrate 61, the sleeve 62' is tightly sealed to the substrate 61 without gaps. Since almost no inter-diffusion of materials occurs at the HIP bonding temperature of the Al substrate, there is a possibility of detachment in the case of a straight-shaped sleeve. In contrast, the sleeve 62' is straight, but a groove 62'a is formed on its outer periphery. Therefore, during HIP bonding, the substrate 61 flows into the groove 62'a, and the substrate 61 is tightly sealed to the sleeve 62', preventing the sleeve 62' from detaching.

[0078] In this embodiment, it is also preferable that the surfaces of the substrate 61 and the sleeve 62' on the gas diffusion space 51 side and the plasma generation space S side are flush.

[0079] The manufacturing method for the spray head can be performed using the same steps 1 to 5 as in the first embodiment. In this embodiment, also as in the first embodiment, HIP treatment is performed to create a state where compressive stress acts between the sleeve 62' and the substrate 61, ensuring a seamless seal between the sleeve 62' and the substrate 61. Furthermore, even if the spray head 2 reaches a high temperature of 200°C, the compressive stress between the sleeve 62' and the substrate 61 remains, maintaining a seamless seal and preserving heat resistance up to approximately 200°C. However, the coefficient of thermal expansion of the ceramic constituting the sleeve 62' is smaller than that of a metal such as Al constituting the substrate 61. Therefore, due to the difference in thermal expansion with the substrate 61, there is a tendency for the heat resistance to become lower than that of the metal sleeve 62 of the first embodiment.

[0080] In this embodiment, the grinding process in step 4 is not necessary. In cases where cracks in the sprayed film can be sufficiently suppressed simply by HIP bonding the sleeve 62′, or where the height difference is small, such grinding process may not be required.

[0081] Furthermore, in this embodiment, it is desirable that the process of forming the anodized coating 61a is performed after the HIP treatment, and the surfaces on which the spray-coated films 63 and 64 are formed are masked. Alternatively, without forming the first spray-coated film 63, the surface of the substrate 61 on the gas diffusion space 51 side can be in a state where the anodized coating 61a is formed.

[0082] <Experimental Example>

[0083] Here, in response to Figure 2 The structure and Figure 6The gas ejection section of the spray head was tested for heat resistance in both structures obtained by bonding the sleeve as before and structures obtained by HIP bonding. Al(A6061) was used as the substrate. Figure 2 The construction uses stainless steel (SUS316L) as the metal sleeve, for... Figure 6 The structure uses Al2O3 as the ceramic sleeve. In addition, for any structure, an Al2O3 spray-deposited film is used as the first spray-deposited film on the gas diffusion space side, and a mixed spray-deposited film containing Y2O3 (SP spray-deposited film) is used as the second spray-deposited film on the plasma generation space side.

[0084] Heat resistance tests were conducted on these spray heads under varying temperatures. As part of the heat resistance test, thermal cycling tests were performed on the spray heads at various temperatures using a high-temperature drying oven. Results regarding the spray heads using stainless steel sleeves are as follows: Figure 7 As shown, the results regarding the use of spray heads with ceramic sleeves are as follows: Figure 8 As shown.

[0085] like Figure 7 As shown, for sleeves made of stainless steel Figure 2 In the case of the sleeve being bonded, cracks appeared in the sprayed film at 200°C. In contrast, no cracks were found in the sprayed film even at 300°C when the sleeve was HIP bonded.

[0086] In addition, such as Figure 8 As shown, for the use of ceramic sleeves Figure 6 In the case of the sleeve being bonded, cracks appeared in the sprayed film at 180°C. In contrast, when the sleeve was HIP bonded, no cracks were found in the sprayed film up to 200°C.

[0087] As can be confirmed from the above, for any sleeve, heat resistance can be improved by HIP bonding of the sleeve compared to the case of adhesive bonding.

[0088] <Other Applications>

[0089] The embodiments have been described above, but it should be considered that the embodiments disclosed herein are merely illustrative and not restrictive in all respects. Various omissions, substitutions, and modifications may be made to the above embodiments without departing from the claims and their spirit.

[0090] For example, in the above embodiment, an example of using an inductively coupled plasma processing apparatus as a plasma processing apparatus for plasma etching is illustrated, but it is not limited to this. Any spray head with a metal substrate for the gas ejection part can be used, or other plasma processing apparatuses such as capacitively coupled plasma processing apparatuses can also be used. In the case of capacitively coupled plasma processing apparatuses, it is not necessary to divide the spray head.

[0091] Furthermore, the above embodiments were described using a plasma etching apparatus as an example, but are not limited to this. Any plasma processing apparatus that uses plasma with highly corrosive gases, such as plasma ashing or plasma CVD, can be applied.

Claims

1. A method for manufacturing a spray head, comprising manufacturing a spray head in a plasma processing apparatus for performing plasma processing on a substrate, wherein the spray head ejects a processing gas for generating the plasma into a plasma generation space within a chamber on which the substrate is disposed and plasma is generated, wherein, The spray head includes: a main body having a plurality of gas outlet holes from which the treated gas is ejected; and a gas diffusion space disposed within the main body, through which the treated gas is introduced and in communication with the gas outlet holes. The manufacturing method of the spray head includes the following steps: The process of preparing a metal substrate, which constitutes the portion of the main body having the gas ejection hole and having a plurality of sleeve mounting holes; The process of installing the sleeve into each of the sleeve mounting holes of the substrate, wherein the sleeve has the gas ejection hole inside; The process of performing HIP treatment on the substrate and the sleeve, and then HIP bonding the sleeve to the substrate; as well as The process of forming a ceramic spray-coated film on the plasma generation space side of the substrate and the plasma generation space side of the sleeve. The manufacturing method of the spray head further includes a step of grinding or lapping after the sleeve HIP is joined to the substrate and before the spray coating is formed, so that the plasma generation space side surface of the substrate and the plasma generation space side surface of the sleeve are flush. The manufacturing method of the spray head further includes a step of forming a ceramic spray-coated film on the gas diffusion space side surface of the substrate and the gas diffusion space side surface of the sleeve. The method for manufacturing the spray head further includes a step of grinding or polishing to make the surfaces of the substrate and the sleeve flush after the sleeve HIP is joined to the substrate and before the step of forming a sprayed film on the gas diffusion space side surface of the substrate and the surface of the sleeve on the gas diffusion space side surface.

2. The method for manufacturing a spray head according to claim 1, wherein, The substrate is made of aluminum, and the HIP treatment is performed at a temperature between 300°C and 550°C.

3. The method for manufacturing a spray head according to claim 2, wherein, The HIP treatment is performed at a temperature between 400°C and 450°C.

4. The method for manufacturing a spray head according to any one of claims 1 to 3, wherein, The sleeve is made of a corrosion-resistant metal material.

5. The method for manufacturing a spray head according to claim 4, wherein, The process of forming the sprayed film on the surface of the plasma generation space is carried out while the substrate is heated to a temperature of 150°C to 250°C.

6. The method for manufacturing a spray head according to any one of claims 1 to 3, wherein, The sleeve is made of ceramic.

7. The method for manufacturing a spray head according to any one of claims 1 to 3, wherein, The sprayed film formed on the surface of the plasma generation space contains yttrium oxide.

8. The method for manufacturing a spray head according to any one of claims 1 to 3, wherein, The plate-shaped gas ejector portion of the main body, having the substrate and multiple sleeves, is combined with the base portion having a recess in a manner that covers the recess. The multiple sleeves have the gas ejector holes, and the space formed by the recess and the gas ejector portion becomes the gas diffusion space.

9. A spray head that sprays a processing gas for generating plasma into a plasma generation space within a chamber where the substrate is disposed and plasma is generated, in a plasma processing apparatus for performing plasma-based processing on a substrate, wherein... The spray head has: The main body has a plurality of gas ejection holes from which the processed gas is ejected; as well as A gas diffusion space, located within the main body, is incorporating the processing gas and communicating with the gas ejection port. The portion of the main body having the gas ejection hole has: The substrate is made of metal; A sleeve, which is mounted on the substrate and has the gas ejection port inside it; and A ceramic-coated film is formed on the plasma generation space side surface of the substrate and the plasma generation space side surface of the sleeve. The sleeve HIP is bonded to the substrate. For the substrate and the sleeve that have undergone HIP bonding, the plasma generation space side surface of the substrate and the plasma generation space side surface of the sleeve are flush, and the gas diffusion space side surface of the substrate and the gas diffusion space side surface of the sleeve are also flush. The spray head also has other ceramic spray-coated films formed on the gas diffusion space side of the substrate and on the gas diffusion space side of the sleeve.

10. The spray head according to claim 9, wherein, The substrate is made of aluminum.

11. The spray head according to claim 9 or 10, wherein, The sleeve is made of corrosion-resistant metal or ceramic.

12. The spray head according to claim 9 or 10, wherein, The sprayed film contains yttrium oxide.

13. A plasma processing apparatus, which is a plasma processing apparatus for processing a substrate using plasma, wherein, The plasma processing device has the following features: A chamber that houses the substrate; A stage, which holds a substrate within the cavity; A plasma generation mechanism that generates the plasma within the cavity; and The spray head according to any one of claims 9 to 12 is disposed in the chamber opposite to the mounting platform, and supplies the processing gas for generating the plasma into the plasma generation space within the chamber.

14. The plasma processing apparatus according to claim 13, wherein, The plasma generation mechanism is configured to include a high-frequency antenna and a high-frequency power supply that supplies high-frequency power to the high-frequency antenna. By supplying high-frequency power to the high-frequency antenna, inductively coupled plasma is formed in the plasma generation space within the cavity. The high-frequency antenna is configured to face the side of the spray head opposite to the plasma generation space. The shower head is configured as a top wall of the chamber, functions as a metal window of the inductively coupled plasma, has a configuration that is divided into a plurality by an insulating member, so that a magnetic field and an eddy current generated by a high-frequency current flowing to the high-frequency antenna reach the plasma generation space side.

Images