A neutron sensitive composite film and preparation method thereof, and a neutron sensitive microchannel plate

Abstract

The present application provides a neutron-sensitive composite film and a preparation method thereof, and a neutron-sensitive microchannel plate, which belongs to the technical field of electronic devices. The neutron-sensitive composite film includes a neutron-sensitive layer and a metal single-substance layer that are alternately stacked. The material of the neutron-sensitive layer includes BN or 10 BN. The alternating stacked neutron sensitive layers and metal single-substance layers can optimize the neutron detection capability of the neutron sensitive composite film, and the metal single-substance layer makes the neutron sensitive composite film conductive. A neutron sensitive composite film with a dense surface and uniform thickness is prepared on the inner wall of the microchannel plate by atomic layer deposition, so that the microchannel plate has better neutron detection capability and improves the neutron detection efficiency of the neutron sensitive composite film. At the same time, by regulating the number of repetitions of atomic layer deposition, the thickness of each neutron sensitive layer and metal single-substance layer can be accurately controlled, as well as the thickness of the entire neutron sensitive composite film, so as to design a neutron sensitive composite film with a preset resistance.

Description

Technical Field

[0001] The present application relates to the technical field of electronic devices, and in particular to a neutron-sensitive composite membrane and a preparation method thereof, and a neutron-sensitive microchannel plate. Background Art

[0002] Microchannel Plate (MCP) is a large-area electron multiplying detector with high spatial resolution and very high temporal resolution. Microchannel plates are mainly used as high-performance night vision image intensifiers and are widely used in various scientific research fields. Microchannel plates are based on glass sheets, and microholes with a slightly smaller aperture than the spatial period are arranged in a hexagonal period with a spatial period of several microns to more than ten microns on the substrate. There are about millions of microchannels on an MCP, and secondary electrons can collide and multiply on the channel wall, and the working principle is similar to that of a photomultiplier tube.

[0003] As a multiplication device, a constant voltage between 700V and 1000V is usually loaded at both ends of the microchannel plate in order to achieve the required gain. Taking into account the working principle, environmental factors, device performance and other factors of the microchannel plate, the working current of the microchannel plate is limited to 1μA to 10μA. The traditional microchannel plate uses a hydrogen reduction process to prepare a metal single layer on its surface to make it conductive. After the hydrogen reduction process, the inner wall of the microchannel plate will adsorb residual gas molecules. When the inner wall of the microchannel is hit by the incident electrons, the residual gas molecules are ionized into positive electron ions. The positive ions move in the opposite direction of the incident electrons, escape from the channel and hit the photocathode, which damages the service life of the photocathode and also generates ion noise.

[0004] Ordinary microchannels do not contain neutron-sensitive nuclides and do not have the ability to detect neutrons. In order to introduce the advantages of microchannels such as high gain and high resolution into the field of neutron imaging detection, neutron-sensitive nuclides such as 10 B. 155 Gd, 157 Gd makes the microchannel plate sensitive to neutrons, and the same manufacturing process of the microchannel plate is used to make the microchannel plate sensitive to neutrons. At present, lead silicate glass and soluble glass materials are commonly used to make microchannel plates, and the micropore array is formed by the process of fusion fiber and acid etching to remove the core. Due to the limitation of the acid dissolution process, the content of neutron sensitive nuclides in the substrate cannot be further increased. Summary of the invention

[0005] The present application provides a neutron-sensitive composite film and a preparation method thereof, and a neutron-sensitive microchannel plate, which can provide a composite film with neutron detection capability and be applied to a microchannel plate to enable the microchannel plate to have neutron detection capability.

[0006] The embodiment of the present application is implemented as follows:

[0007] In a first aspect, the present application provides a neutron sensitive composite film, which includes neutron sensitive layers and metal single substance layers that are alternately stacked.

[0008] The neutron sensitive layer is made of BN or 10 BN.

[0009] In the above technical scheme, the neutron sensitive composite film provided in the present application can be used for neutron detection, the alternatingly stacked neutron sensitive layers and metal single-substance layers can optimize the neutron detection capability of the neutron sensitive composite film, and the metal single-substance layer makes the neutron sensitive composite film conductive.

[0010] In combination with the first aspect, in a first possible example of the first aspect of the present application, the material of the above-mentioned metal single-substance layer includes W metal or Mo metal.

[0011] In combination with the first aspect, in a second possible example of the first aspect of the present application, the thickness of the neutron sensitive composite film is 0.02 to 2.5 μm.

[0012] Optionally, the number of neutron sensitive layers is 10 to 1250, and the number of metal single substance layers is 10 to 1250.

[0013] In a second aspect, the present application provides an example of a method for preparing the above-mentioned neutron sensitive composite film, which includes: alternately depositing neutron sensitive layers and metal single substance layers on a substrate to form a neutron sensitive composite film.

[0014] Optionally, the material of the metal single-substance layer includes W metal or Mo metal.

[0015] In the above technical solution, the present application obtains a neutron-sensitive composite film with a dense surface and uniform thickness on the substrate surface by a deposition method, thereby improving the neutron detection efficiency of the neutron-sensitive composite film. The thickness of the neutron-sensitive layer and the metal single substance layer in the neutron-sensitive composite film can be precisely controlled, as well as the thickness of the entire neutron-sensitive composite film, thereby designing a neutron-sensitive composite film with a preset resistance, which is suitable for mass production.

[0016] In combination with the second aspect, in a first possible example of the second aspect of the present application, the above-mentioned substrate is arranged in a deposition chamber, and the method of forming each neutron sensitive layer includes: sequentially introducing a first neutron sensitive layer precursor, an inert gas, a second neutron sensitive layer precursor and an inert gas into the deposition chamber, and repeating 2 to 900 times.

[0017] In the above example, the first neutron sensitive layer precursor is first introduced into the deposition chamber, and then the deposition chamber is purged with an inert gas to purge the excess first neutron sensitive layer precursor in the deposition chamber. Then the second neutron sensitive layer precursor is introduced into the deposition chamber, the second neutron sensitive layer precursor reacts with the first neutron sensitive layer precursor, and then the deposition chamber is purged with an inert gas to purge the excess second neutron sensitive layer precursor in the deposition chamber. Repeat the above operation to obtain a neutron sensitive layer of a certain thickness.

[0018] In combination with the second aspect, in a second possible example of the second aspect of the present application, the first neutron sensitive layer precursor includes liquid BBr3 or 10 BBr3, the second neutron sensitive layer precursor includes gaseous NH3.

[0019] In the above example, BBr3 can react with NH3 to produce BN thin film; 10 BBr3 can be prepared by reacting with NH3 10 BN thin film.

[0020] In combination with the second aspect, in a third possible example of the second aspect of the present application, the above-mentioned method of forming each metal single layer includes: sequentially introducing a first metal single layer precursor, an inert gas, a second metal single layer precursor and an inert gas into a deposition chamber, and repeating this process 1 to 30 times.

[0021] In the above example, the first metal single layer precursor is first introduced into the deposition chamber, and then the deposition chamber is purged with an inert gas to purge the excess first metal single layer precursor in the deposition chamber. Then the second metal single layer precursor is introduced into the deposition chamber, the second metal single layer precursor reacts with the first metal single layer precursor, and then the deposition chamber is purged with an inert gas to purge the excess second metal single layer precursor in the deposition chamber. Repeat the above operation to obtain a metal single layer of a certain thickness.

[0022] In combination with the second aspect, in a fourth possible example of the second aspect of the present application, the first metal single-substance layer precursor includes gaseous WF6 or MoF6, and the second metal single-substance layer precursor includes gaseous Si2H6.

[0023] In the above example, WF6 can be reduced to W elemental substance by Si2H6 to form a W film; MoF6 can be reduced to Mo elemental substance by Si2H6 to form a Mo film.

[0024] In combination with the second aspect, in a fifth possible example of the second aspect of the present application, before alternately depositing the neutron sensitive layer and the metal single substance layer on the substrate, the deposition chamber is evacuated and the deposition chamber and the substrate are heated to 200-800°C.

[0025] In a third aspect, the present application provides an example of a neutron-sensitive microchannel plate, which includes a microchannel plate and the above-mentioned neutron-sensitive composite membrane, wherein the neutron-sensitive composite membrane is disposed on the inner wall of the microchannel plate.

[0026] In the above technical solution, the neutron-sensitive microchannel plate of the present application has good neutron detection capability, high neutron detection efficiency and low noise. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 A cross-sectional view of a first neutron sensitive composite membrane according to an embodiment of the present application;

[0029] Figure 2 A cross-sectional view of a second neutron sensitive composite membrane according to an embodiment of the present application;

[0030] Figure 3 This is a cross-sectional view of the third neutron sensitive composite membrane of an embodiment of the present application.

[0031] Icon: 10-neutron sensitive composite film; 110-neutron sensitive layer; 120-metal single substance layer. DETAILED DESCRIPTION

[0032] The embodiments of the present application will be described in detail below in conjunction with the examples, but it will be appreciated by those skilled in the art that the following examples are only used to illustrate the present application and should not be considered as limiting the scope of the present application. In the examples, if specific conditions are not specified, they are carried out according to normal conditions or the conditions recommended by the manufacturer. If the manufacturer is not specified for the reagents or instruments used, they are all conventional products that can be purchased commercially.

[0033] The inventors have found that doping neutron-sensitive nuclides in glass makes the melting process complicated and the preparation difficulty high. The introduction of neutron-sensitive nuclides into glass will change the physical and chemical properties of the glass, such as softening temperature, viscosity, thermal expansion coefficient, etc., thereby changing the process parameters for preparing the microchannel substrate and increasing the difficulty of preparing the microchannel plate. In addition, excessive introduction of neutron-sensitive nuclides may also make the glass unable to be formed.

[0034] The following is a specific description of a neutron-sensitive composite membrane and a preparation method thereof, and a neutron-sensitive microchannel plate according to an embodiment of the present application:

[0035] See also Figure 1 The present application provides a neutron sensitive composite film 10, which includes neutron sensitive layers 110 and metal single substance layers 120 which are alternately stacked.

[0036] The material of the neutron sensitive layer 110 includes BN or 10 BN, the material of the metal single substance layer 120 includes W metal or Mo metal.

[0037] The neutron sensitive layer 110 can make the neutron sensitive composite film 10 sensitive to neutrons, so that it can be used for neutron detection. The metal single substance layer 120 can be used for the conductivity of the neutron sensitive composite film 10, and the neutron sensitive composite film 10 with a preset resistance can be obtained by adjusting the thickness of the metal single substance layer 120.

[0038] It should be noted that the neutron sensitive composite film 10 of the present application includes multiple layers of neutron sensitive layers 110 and metal single substance layers 120 that are alternately stacked. Figure 1 Both ends of the neutron sensitive composite film 10 in the thickness direction may be entirely neutron sensitive layers 110, that is, the structure of the neutron sensitive composite film 10 in the thickness direction is neutron sensitive layer 110-(metal single substance layer 120-neutron sensitive layer 110-metal single substance layer 120) n - Neutron sensitive layer 110. See Figure 2 The two ends of the neutron sensitive composite film 10 in the thickness direction may be all metal single substance layers 120, that is, the structure of the neutron sensitive composite film 10 in the thickness direction is metal single substance layer 120-(neutron sensitive layer 110-metal single substance layer 120-neutron sensitive layer 110) n -Metallic single substance layer 120. Figure 3 At both ends of the neutron sensitive composite film 10 in the thickness direction, one may be a metal single substance layer 120 and the other may be a neutron sensitive layer 110, that is, the structure of the neutron sensitive composite film 10 in the thickness direction is metal single substance layer 120-(neutron sensitive layer 110-metal single substance layer 120) n - Neutron sensitive layer 110 .

[0039] Optionally, the number of neutron sensitive layers 110 is 10 to 1250, and the number of metal single substance layers 120 is 10 to 1250.

[0040] Optionally, the thickness of the neutron sensitive composite film 10 is 0.02-2.5 μm.

[0041] The present application also provides a method for preparing a neutron sensitive composite film, which comprises: alternately depositing a neutron sensitive layer and a metal single substance layer on a substrate to form a neutron sensitive composite film.

[0042] Through the deposition method, a neutron-sensitive composite film with a dense surface and uniform thickness can be obtained on the substrate surface, thereby improving the neutron detection efficiency of the neutron-sensitive composite film. In addition, the thickness of the neutron-sensitive layer and the metal single-substance layer in the neutron-sensitive composite film can be precisely controlled, as well as the thickness of the entire neutron-sensitive composite film, and a neutron-sensitive composite film with a preset resistance can be designed.

[0043] Optionally, the deposition method comprises atomic layer deposition.

[0044] Optionally, the substrate comprises a microchannel plate.

[0045] Before deposition, the substrate is first cleaned, and then the cleaned substrate is placed in a deposition chamber in an atomic layer deposition device, the deposition chamber is evacuated, and the deposition chamber and the substrate therein are heated to 200-800°C.

[0046] Optionally, the deposition chamber is evacuated to 10 -1 ~10 -5 Pa.

[0047] Optionally, the deposition chamber and the substrate therein are heated to 300-750°C.

[0048] Optionally, the deposition chamber and the substrate therein are heated to 350-450°C.

[0049] The method for forming each neutron sensitive layer includes: sequentially introducing a first neutron sensitive layer precursor, an inert gas, a second neutron sensitive layer precursor and an inert gas into a deposition chamber, and repeating the process 2 to 900 times.

[0050] A growth cycle of the neutron film includes the following steps: firstly, the first neutron sensitive layer precursor is introduced into the deposition chamber for 0.05 to 0.15 seconds, and after the substrate absorbs the first neutron sensitive layer precursor for 1 to 3 seconds, an inert gas is introduced to purge the excess first neutron sensitive layer precursor in the deposition chamber, and the purge time of the inert gas is 3 to 10 seconds. Then, the second neutron sensitive layer precursor is introduced into the deposition chamber for 1 to 3 seconds, and after the substrate absorbs the second neutron sensitive layer precursor for 3 to 5 seconds, an inert gas is introduced to purge the excess second neutron sensitive layer precursor in the deposition chamber, and the purge time of the inert gas is 3 to 10 seconds.

[0051] Optionally, the first neutron sensitive layer precursor includes liquid BBr3 or 10 BBr3.

[0052] Optionally, when the first neutron sensitive layer precursor is introduced, an inert gas is used as a carrier gas, and the carrier gas delivers the vapor of the first neutron sensitive layer precursor into the deposition chamber.

[0053] Optionally, the second neutron sensitive layer precursor includes gaseous NH3.

[0054] Optionally, an inert gas is used as a carrier gas when the second neutron sensitive layer precursor is introduced.

[0055] BBr3 can react with NH3 to produce BN thin film; 10 BBr3 can be prepared by reacting with NH3 10 BN thin film.

[0056] Optionally, the inert gas comprises argon and / or nitrogen.

[0057] In one embodiment of the present application, the inert gas may be argon alone. In some other embodiments of the present application, the inert gas may also be nitrogen alone, or may also be a mixture of nitrogen and argon.

[0058] Optionally, the first neutron sensitive layer precursor is introduced into the deposition chamber for 0.1 s.

[0059] Optionally, the flow rate of the carrier gas of the first neutron sensitive layer precursor introduced into the deposition chamber is 10 sccm.

[0060] Optionally, the substrate adsorbs the first neutron sensitive layer precursor for 2 seconds.

[0061] Optionally, the purge time of the inert gas to purge excess first neutron sensitive layer precursor is 5 seconds.

[0062] Optionally, the flow rate of the inert gas introduced into the deposition chamber is 30 sccm.

[0063] Optionally, the second neutron sensitive layer precursor is introduced into the deposition chamber for 1 s.

[0064] Optionally, the flow rate of the second neutron sensitive layer precursor introduced into the deposition chamber is 3 sccm.

[0065] Optionally, the flow rate of the carrier gas of the second neutron sensitive layer precursor introduced into the deposition chamber is 10 sccm.

[0066] Optionally, the substrate adsorbs the second neutron sensitive layer precursor for 2 seconds.

[0067] Optionally, the purge time of the inert gas to purge excess second neutron sensitive layer precursor is 5 seconds.

[0068] The method for forming each metal single layer includes: sequentially introducing a first metal single layer precursor, an inert gas, a second metal single layer precursor and an inert gas into a deposition chamber, and repeating the process 1 to 30 times.

[0069] A growth cycle of a metal single substance film includes the following steps: firstly, a first metal single substance layer precursor is introduced into the deposition chamber for 0.5 to 1.5 seconds, and after the substrate absorbs the first metal single substance layer precursor for 1 to 3 seconds, an inert gas is introduced to purge the excess first metal single substance layer precursor in the deposition chamber, and the purge time of the inert gas is 3 to 10 seconds. Then, a second metal single substance layer precursor is introduced into the deposition chamber for 0.5 to 1.5 seconds, and after the substrate absorbs the second metal single substance layer precursor for 1 to 3 seconds, an inert gas is introduced to purge the excess second metal single substance layer precursor in the deposition chamber, and the purge time of the inert gas is 3 to 10 seconds.

[0070] Optionally, the first metal single substance layer precursor includes gaseous WF6 or MoF6.

[0071] Optionally, an inert gas is used as a carrier gas when the first metal single substance layer precursor is introduced.

[0072] Optionally, the second metal single-element layer precursor includes Si2H6.

[0073] Optionally, an inert gas is used as a carrier gas when the second metal single substance layer precursor is introduced.

[0074] WF6 can be reduced to W by Si2H6 to form W thin film; MoF6 can be reduced to Mo by Si2H6 to form Mo thin film. The reaction formula is as follows:

[0075] WF6(g)+Si2H6→W(s)+2SiF3H(g)+2H2(g)

[0076] MoF6(g)+Si2H6→Mo(s)+2SiF3H(g)+2H2(g)

[0077] Optionally, the first metal single substance layer precursor is introduced into the deposition chamber for 1 s.

[0078] Optionally, the flow rate of the first metal single substance layer precursor introduced into the deposition chamber is 2 sccm.

[0079] Optionally, the flow rate of the carrier gas of the first metal single substance layer precursor introduced into the deposition chamber is 10 sccm.

[0080] Optionally, the substrate adsorbs the first metal single substance layer precursor for 2 seconds.

[0081] Optionally, the purge time of the inert gas to purge excess first metal single substance layer precursor is 5 seconds.

[0082] Optionally, the second metal single substance layer precursor is introduced into the deposition chamber for 1 s.

[0083] Optionally, the flow rate of the second metal single substance layer precursor introduced into the deposition chamber is 3 sccm.

[0084] Optionally, the flow rate of the carrier gas of the second metal single substance layer precursor introduced into the deposition chamber is 10 sccm.

[0085] Optionally, the substrate adsorbs the second metal single-substance layer precursor for 2 seconds.

[0086] Optionally, the purge time of the inert gas to purge excess second metal single substance layer precursor is 5 seconds.

[0087] The present application also provides a neutron-sensitive microchannel plate, which includes a microchannel plate and the above-mentioned neutron-sensitive composite membrane, wherein the neutron-sensitive composite membrane is arranged on the inner wall of the microchannel plate.

[0088] The present application uses atomic layer deposition to prepare a neutron-sensitive composite film with a dense surface and uniform thickness on the inner wall of a microchannel plate, so that the microchannel plate has a better neutron detection capability and improves the neutron detection efficiency of the neutron-sensitive composite film. At the same time, by regulating the number of repetitions of atomic layer deposition, the thickness of each neutron-sensitive layer and metal single substance layer can be accurately controlled, as well as the thickness of the entire neutron-sensitive composite film, thereby designing a neutron-sensitive composite film with a preset resistance.

[0089] The following is a further detailed description of a neutron-sensitive composite membrane and a preparation method thereof, and a neutron-sensitive microchannel plate of the present application in conjunction with the embodiments.

[0090] Example 1

[0091] The present invention provides a neutron sensitive microchannel plate and a method for preparing the same, which comprises the following steps:

[0092] 1. Preparation

[0093] The microchannel plate is cleaned and placed in an atomic layer deposition chamber, the deposition chamber is evacuated to a pressure of 20 mbar, and the deposition chamber and the microchannel plate in the deposition chamber are heated to 350°C.

[0094] 2. Deposit a neutron sensitive layer

[0095] First, BBr3 is introduced into the atomic layer deposition chamber for 0.1s using Ar as a carrier gas with a flow rate of 10sccm. After adsorption for 2s, Ar is used for purge for 5s. Then, NH3 gas is introduced into the atomic layer deposition chamber for 2s using Ar as a carrier gas with a flow rate of 10sccm. The flow rate of NH3 gas is 3sccm. After adsorption for 4s, Ar is used for purge for 5s. The growth of a BN film is completed. The above cycle is repeated 20 times to obtain a neutron sensitive layer.

[0096] 3. Deposit a metal single layer

[0097] First, WF6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the WF6 gas is 2 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds; then Si2H6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the Si2H6 gas is 3 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds, thus completing the growth of a W film. The above cycle is repeated twice to obtain a single metal layer.

[0098] 4. Preparation of neutron sensitive microchannel plates

[0099] Steps 2 and 3 were repeated 500 times to obtain a neutron-sensitive microchannel plate with a W-BN film.

[0100] Example 2

[0101] The present invention provides a neutron sensitive microchannel plate and a method for preparing the same, which comprises the following steps:

[0102] 1. Preparation

[0103] The microchannel plate is cleaned and placed in an atomic layer deposition chamber, the deposition chamber is evacuated to a pressure of 20 mbar, and the deposition chamber and the microchannel plate in the deposition chamber are heated to 420°C.

[0104] 2. Deposit a neutron sensitive layer

[0105] First, BBr3 is introduced into the atomic layer deposition chamber for 0.1s using Ar as a carrier gas with a flow rate of 10sccm. After adsorption for 2s, Ar is used for purge for 5s. Then, NH3 gas is introduced into the atomic layer deposition chamber for 2s using Ar as a carrier gas with a flow rate of 10sccm. The flow rate of NH3 gas is 3sccm. After adsorption for 4s, Ar is used for purge for 5s. The growth of a BN film is completed. The above cycle is repeated 20 times to obtain a neutron sensitive layer.

[0106] 3. Deposit a metal single layer

[0107] First, MoF6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, and the flow rate of the carrier gas Ar is 10 sccm. The flow rate of the WF6 gas is 2 sccm. After adsorption for 2 seconds, Ar is used for purging for 5 seconds. Then, Si2H6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, and the flow rate of the carrier gas Ar is 10 sccm. The flow rate of the Si2H6 gas is 3 sccm. After adsorption for 2 seconds, Ar is used for purging for 5 seconds. The growth of a W film is completed. The above cycle is repeated twice to obtain a single metal layer.

[0108] 4. Preparation of neutron sensitive microchannel plates

[0109] Steps 2 and 3 were repeated 600 times to obtain a neutron-sensitive microchannel plate with a Mo-BN film.

[0110] Example 3

[0111] The present invention provides a neutron sensitive microchannel plate and a method for preparing the same, which comprises the following steps:

[0112] 1. Preparation

[0113] The microchannel plate is cleaned and placed in an atomic layer deposition chamber, the deposition chamber is evacuated to a pressure of 20 mbar, and the deposition chamber and the microchannel plate in the deposition chamber are heated to 420°C.

[0114] 2. Deposit a neutron sensitive layer

[0115] First, Ar was used as the carrier gas to introduce 0.1s of 10 BBr3, the flow rate of carrier gas Ar is 10sccm, after adsorption for 2s, Ar is used for purging for 5s; then NH3 gas is introduced into the atomic layer deposition chamber for 2s with Ar as carrier gas, the flow rate of carrier gas Ar is 10sccm, the flow rate of NH3 gas is 3sccm, after adsorption for 4s, Ar is used for purging for 5s, and a deposition process is completed. 10 The growth of the BN film was repeated 20 times to obtain a neutron sensitive layer.

[0116] 3. Deposit a metal single layer

[0117] First, WF6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the WF6 gas is 2 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds; then Si2H6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the Si2H6 gas is 3 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds, thus completing the growth of a W film. The above cycle is repeated twice to obtain a single metal layer.

[0118] 4. Preparation of neutron sensitive microchannel plates

[0119] Repeat steps 2 and 3 800 times to obtain a W- 10 Neutron sensitive microchannel plate of BN thin film.

[0120] Example 4

[0121] The present invention provides a neutron sensitive microchannel plate and a method for preparing the same, which comprises the following steps:

[0122] 1. Preparation

[0123] The microchannel plate is cleaned and placed in an atomic layer deposition chamber, the deposition chamber is evacuated to a pressure of 20 mbar, and the deposition chamber and the microchannel plate in the deposition chamber are heated to 350°C.

[0124] 2. Deposit a neutron sensitive layer

[0125] First, BBr3 is introduced into the atomic layer deposition chamber for 0.1s using Ar as a carrier gas with a flow rate of 10sccm. After adsorption for 2s, Ar is used for purge for 5s. Then, NH3 gas is introduced into the atomic layer deposition chamber for 2s using Ar as a carrier gas with a flow rate of 10sccm. The flow rate of NH3 gas is 3sccm. After adsorption for 4s, Ar is used for purge for 5s. The growth of a BN film is completed. The above cycle is repeated 20 times to obtain a neutron sensitive layer.

[0126] 3. Deposit a metal single layer

[0127] First, WF6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the WF6 gas is 2 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds; then Si2H6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the Si2H6 gas is 3 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds, thus completing the growth of a W film. The above cycle is repeated 4 times to obtain a single metal layer.

[0128] 4. Preparation of neutron sensitive microchannel plates

[0129] Steps 2 and 3 were repeated 500 times to obtain a neutron-sensitive microchannel plate with a W-BN film.

[0130] Example 5

[0131] The present invention provides a neutron sensitive microchannel plate and a method for preparing the same, which comprises the following steps:

[0132] 1. Preparation

[0133] The microchannel plate is cleaned and placed in an atomic layer deposition chamber, the deposition chamber is evacuated to a pressure of 20 mbar, and the deposition chamber and the microchannel plate in the deposition chamber are heated to 350°C.

[0134] 2. Deposit a neutron sensitive layer

[0135] First, BBr3 is introduced into the atomic layer deposition chamber for 0.1s using Ar as a carrier gas with a flow rate of 10sccm. After adsorption for 2s, Ar is used for purge for 5s. Then, NH3 gas is introduced into the atomic layer deposition chamber for 2s using Ar as a carrier gas with a flow rate of 10sccm. The flow rate of NH3 gas is 3sccm. After adsorption for 4s, Ar is used for purge for 5s. The growth of a BN film is completed. The above cycle is repeated 200 times to obtain a neutron sensitive layer.

[0136] 3. Deposit a metal single layer

[0137] First, WF6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the WF6 gas is 2 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds; then Si2H6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the Si2H6 gas is 3 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds, thus completing the growth of a W film. The above cycle is repeated 6 times to obtain a single metal layer.

[0138] 4. Preparation of neutron sensitive microchannel plates

[0139] Steps 2 and 3 were repeated 500 times to obtain a neutron-sensitive microchannel plate with a W-BN film.

[0140] Example 6

[0141] The present invention provides a neutron sensitive microchannel plate and a method for preparing the same, which comprises the following steps:

[0142] 1. Preparation

[0143] The microchannel plate is cleaned and placed in an atomic layer deposition chamber, the deposition chamber is evacuated to a pressure of 20 mbar, and the deposition chamber and the microchannel plate in the deposition chamber are heated to 350°C.

[0144] 2. Deposit a neutron sensitive layer

[0145] First, BBr3 is introduced into the atomic layer deposition chamber for 0.1s using Ar as a carrier gas with a flow rate of 10sccm. After adsorption for 2s, Ar is used for purging for 5s. Then, NH3 gas is introduced into the atomic layer deposition chamber for 2s using Ar as a carrier gas with a flow rate of 10sccm. The flow rate of NH3 gas is 3sccm. After adsorption for 4s, Ar is used for purging for 5s. The growth of a BN film is completed. The above cycle is repeated 25 times to obtain a neutron sensitive layer.

[0146] 3. Deposit a metal single layer

[0147] First, WF6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the WF6 gas is 2 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds; then Si2H6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the Si2H6 gas is 3 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds, thus completing the growth of a W film. The above cycle is repeated twice to obtain a single metal layer.

[0148] 4. Preparation of neutron sensitive microchannel plates

[0149] Steps 2 and 3 were repeated 500 times to obtain a neutron-sensitive microchannel plate with a W-BN film.

[0150] Example 7

[0151] The present invention provides a neutron sensitive microchannel plate and a method for preparing the same, which comprises the following steps:

[0152] 1. Preparation

[0153] The microchannel plate is cleaned and placed in an atomic layer deposition chamber, the deposition chamber is evacuated to a pressure of 20 mbar, and the deposition chamber and the microchannel plate in the deposition chamber are heated to 350°C.

[0154] 2. Deposit a neutron sensitive layer

[0155] First, BBr3 is introduced into the atomic layer deposition chamber for 0.1s using Ar as a carrier gas with a flow rate of 10sccm. After adsorption for 2s, Ar is used for purge for 5s. Then, NH3 gas is introduced into the atomic layer deposition chamber for 2s using Ar as a carrier gas with a flow rate of 10sccm. The flow rate of NH3 gas is 3sccm. After adsorption for 4s, Ar is used for purge for 5s. The growth of a BN film is completed. The above cycle is repeated 30 times to obtain a neutron sensitive layer.

[0156] 3. Deposit a metal single layer

[0157] First, WF6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the WF6 gas is 2 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds; then Si2H6 gas is introduced into the atomic layer deposition chamber for 1 second using Ar as a carrier gas, the flow rate of the carrier gas Ar is 10 sccm, the flow rate of the Si2H6 gas is 3 sccm, and after adsorption for 2 seconds, Ar is used for purge for 5 seconds, thus completing the growth of a W film. The above cycle is repeated twice to obtain a single metal layer.

[0158] 4. Preparation of neutron sensitive microchannel plates

[0159] Steps 2 and 3 were repeated 500 times to obtain a neutron-sensitive microchannel plate with a W-BN film.

[0160] Test Example 1

[0161] The resistance of the film was measured by a high resistance meter, and the thickness of the film was measured by an ellipsometer, as shown in Table 1.

[0162] Table 1

[0163]

[0164] In summary, the embodiments of the present application provide a neutron-sensitive composite film and a preparation method thereof, and a neutron-sensitive microchannel plate. The alternating stacked neutron-sensitive layers and metal single-substance layers can optimize the neutron detection capability of the neutron-sensitive composite film, and the metal single-substance layers make the neutron-sensitive composite film conductive. A neutron-sensitive composite film with a dense surface and uniform thickness is prepared on the inner wall of the microchannel plate by atomic layer deposition, so that the microchannel plate obtains better neutron detection capability and improves the neutron detection efficiency of the neutron-sensitive composite film. At the same time, by regulating the number of repetitions of atomic layer deposition, the thickness of each neutron-sensitive layer and metal single-substance layer can be accurately controlled, as well as the thickness of the entire neutron-sensitive composite film, thereby designing a neutron-sensitive composite film with a preset resistance.

[0165] The above description is only a specific embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A neutron sensitive composite membrane, characterized in that: The neutron sensitive composite film comprises neutron sensitive layers and metal single substance layers which are alternately stacked; The material of the neutron sensitive layer includes BN or 10 BN; The material of the metal single substance layer includes W metal or Mo metal; The thickness of the neutron sensitive composite film is 0.02 to 2.5 μm; The number of layers of the neutron sensitive layer is 10 to 1250, and the number of layers of the metal single substance layer is 10 to 1250.

2. A method for preparing the neutron sensitive composite membrane according to claim 1, characterized in that: The method for preparing the neutron sensitive composite film comprises: alternately depositing the neutron sensitive layer and the metal single substance layer on a substrate to form the neutron sensitive composite film; the material of the metal single substance layer comprises W metal or Mo metal.

3. The method for preparing the neutron sensitive composite membrane according to claim 2, characterized in that: The substrate is arranged in a deposition chamber, and the method for forming each neutron sensitive layer comprises: sequentially introducing a first neutron sensitive layer precursor, an inert gas, a second neutron sensitive layer precursor and an inert gas into the deposition chamber, and repeating the process 2 to 900 times.

4. The method for preparing a neutron sensitive composite membrane according to claim 3, characterized in that: The first neutron sensitive layer precursor includes liquid BBr3 or 10 BBr3, the second neutron sensitive layer precursor includes gaseous NH3.

5. The method for preparing a neutron sensitive composite membrane according to claim 2, characterized in that: The method for forming each metal single layer comprises: sequentially introducing a first metal single layer precursor, an inert gas, a second metal single layer precursor and an inert gas into a deposition chamber, and repeating the process 1 to 30 times.

6. The method for preparing the neutron sensitive composite membrane according to claim 5, characterized in that: The first metal single substance layer precursor includes gaseous WF6 or MoF6, and the second metal single substance layer precursor includes gaseous Si2H6.

7. The method for preparing a neutron sensitive composite membrane according to any one of claims 2 to 6, characterized in that: Before alternately depositing the neutron sensitive layer and the metal single substance layer on the substrate, the deposition chamber is evacuated, and the deposition chamber and the substrate are heated to 200-800°C.

8. A neutron sensitive microchannel plate, characterized in that: The neutron-sensitive microchannel plate comprises a microchannel plate and the neutron-sensitive composite membrane according to claim 1, and the neutron-sensitive composite membrane is arranged on the inner wall of the microchannel plate.

Images