Gas inlet assembly, process chamber, and semiconductor processing apparatus

Abstract

The application provides an air inlet assembly, a process chamber and a semiconductor process equipment. The air inlet assembly comprises an air inlet seat body and an air flow adjusting assembly. The air inlet seat body has an air outlet for conveying process gas to the inside of the process chamber. The air flow adjusting assembly is arranged on one side of the air outlet and comprises a support component and a plurality of partitions. The partitions are connected to the support component, the support component is used for supporting the partitions, the plurality of partitions are arranged at intervals along the length direction of the air inlet seat body, the adjusting channel is formed between two adjacent partitions, the partitions can rotate around the rotation axis which extends along the height direction of the air inlet seat body to adjust the air outlet direction of the adjusting channel, and the length direction of the air inlet seat body is perpendicular to the air outlet direction of the air outlet. The technical scheme of the application can solve the problem of poor consistency of the thickness of epitaxial layers between different regions caused by the difference in the air flow concentration between different regions of the base.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular to an air intake component, a process chamber and semiconductor process equipment. Background Art

[0002] Figure 1 The figure is a side view of a process chamber of a conventional multi-wafer epitaxial growth device. Figure 2 This is a top view of the process chamber of an existing multi-wafer epitaxial growth device. Figure 3 for Figure 1 Schematic diagram of the distribution of the gas outlet of the gas inlet assembly 12 in the process chamber. Figures 1 to 3 As shown, a gas inlet assembly 12 is provided on one side of the process chamber 11, which has a plurality of gas outlets 121 for delivering process gas into the process chamber 11 in a horizontal direction. Figure 3 As shown, multiple gas outlets 121 are arranged in a row in a horizontal direction perpendicular to the gas inlet direction. Furthermore, a rotatable graphite susceptor 13 is disposed within the process chamber 11. The susceptor has multiple slots 131 for supporting wafers (e.g., silicon wafers), and the slots 131 are evenly distributed along the circumference of the graphite susceptor 13. A heating coil 14 is disposed below the process chamber 11. It uses induction heating to heat the graphite susceptor 13, thereby indirectly heating the wafers to perform the epitaxial growth process at a certain temperature.

[0003] However, during the process, when the process gas flowing out from multiple gas outlets 121 flows through the graphite base 13 in the horizontal direction, the airflow will first reach the outer circle area of ​​the graphite base 13 closer to the gas outlet 121, and then reach the inner circle area, resulting in a difference in the airflow concentration in the outer circle area of ​​the graphite base 13 and the airflow concentration in the inner circle area, so that the thickness consistency of the epitaxial layer between the inner and outer circle areas is poor. Therefore, in order to ensure the thickness consistency of the epitaxial layer, the existing technology can only place one circle of wafers in the outer circle area of ​​the graphite base 13, and cannot place two circles of wafers in the inner and outer circle areas, resulting in low production capacity. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes an air intake component, a process chamber and a semiconductor process equipment, which can solve the problem of poor consistency of epitaxial layer thickness between different areas due to differences in air flow concentration between different areas of the base. In this way, multiple circles of wafers can be placed on the base while ensuring the consistency of epitaxial layer thickness, thereby improving production capacity.

[0005] To achieve the purpose of the present invention, an air intake assembly is provided for use in a process chamber of a semiconductor process equipment. The air intake assembly includes an air intake seat and an air flow adjustment assembly, wherein:

[0006] The gas inlet seat has a gas outlet for delivering process gas into the process chamber;

[0007] The airflow adjustment component is arranged on one side of the air outlet and includes a supporting component and a plurality of partitions, wherein the partition is connected to the supporting component, and the supporting component is used to support the partition, and the plurality of partitions are arranged at intervals along the length direction of the air inlet seat body, and an adjustment channel is formed between two adjacent partitions, and the partition can rotate around a rotation axis, and the rotation axis extends along the height direction of the air inlet seat body to adjust the air outlet direction of the adjustment channel; the length direction of the air inlet seat body and the air outlet direction of the air outlet are perpendicular to each other.

[0008] Optionally, the airflow adjustment assembly further includes at least one linkage member, each of which is connected to a plurality of the partitions, for enabling the plurality of partitions connected to the same linkage member to be linked so that the plurality of partitions rotate at the same angle, and different linkage members are connected to different partitions.

[0009] Optionally, the linkage member includes a cross bar, and a plurality of limiting portions are arranged on the cross bar at intervals along the length direction, and each of the limiting portions on the same cross bar is used to limit the position of each of the partitions on the cross bar in a one-to-one correspondence.

[0010] Optionally, the partition is provided with a through hole passing through the partition along the length direction, the cross bar passes through the through holes of each corresponding partition, and the limiting portion is a limiting groove formed on the cross bar, and the limiting groove is clamped at the edge of the through hole.

[0011] Optionally, the airflow regulation assembly also includes a flow equalizer plate, which is fixedly connected to the support component and is located between the air outlet and the partition. A plurality of groups of air equalizer holes are provided on the flow equalizer plate, and the plurality of groups of air equalizer holes are arranged one-to-one corresponding to the plurality of regulation channels. Each group of the air equalizer holes includes a plurality of air equalizer holes, and the plurality of air equalizer holes are arranged in the height direction and / or the length direction.

[0012] Optionally, the supporting component includes an upper beam and a lower beam, the upper beam and the lower beam are arranged relative to each other along the height direction, the partition is located between the upper beam and the lower beam, and the upper beam and the lower beam are rotatably connected to the partition via a rotating shaft.

[0013] Optionally, the rotating shaft includes two coaxially arranged rotating pins, and the two rotating pins respectively rotatably connect the partition with the upper beam and the lower beam.

[0014] Optionally, the plurality of partitions are divided into four partition groups, namely a first partition group, a second partition group, a third partition group and a fourth partition group, wherein:

[0015] The first baffle group and the second baffle group are symmetrically arranged along the length direction;

[0016] The third baffle plate group and the fourth baffle plate group are symmetrically arranged on both sides of the first baffle plate group and the second baffle plate group along the length direction;

[0017] The air outlet directions of the regulating channels of the first baffle group and the second baffle group are toward the central symmetry axis of the air inlet seat in the longitudinal direction;

[0018] The air outlet directions of the regulating channels of the third baffle group and the fourth baffle group are away from the central symmetry axis of the air inlet seat body in the longitudinal direction.

[0019] Optionally, three independent air intake channels are provided in the air intake seat body, each of the air intake channels has multiple air outlets, one of the air intake channels is connected to the adjustment channels in the first baffle group and the second baffle group, and the other two air intake channels are respectively connected to the adjustment channels in the third baffle group and the fourth baffle group.

[0020] As another technical solution, an embodiment of the present invention also provides a process chamber, including a chamber body, a base and the above-mentioned air intake assembly provided by an embodiment of the present invention, wherein the air intake assembly is arranged on one side of the chamber body, and the base is arranged in the chamber body for carrying multiple wafers.

[0021] Optionally, the base is provided with an inner ring bearing portion and an outer ring bearing portion for bearing a plurality of the wafers, and the outer ring bearing portion surrounds the outer side of the inner ring bearing portion;

[0022] The plurality of partitions are divided into four partition groups, namely the first partition group, the second partition group, the third partition group and the fourth partition group, wherein:

[0023] The first baffle group and the second baffle group are symmetrically arranged along the length direction;

[0024] The third baffle plate group and the fourth baffle plate group are symmetrically arranged on both sides of the first baffle plate group and the second baffle plate group along the length direction;

[0025] The air outlet directions of the regulating channels of the first baffle group and the second baffle group are toward the central symmetry axis of the air inlet seat in the longitudinal direction;

[0026] The air outlet directions of the regulating channels of the third baffle group and the fourth baffle group are away from the central symmetry axis of the air inlet seat in the longitudinal direction;

[0027] The combined length of the first partition group, the second partition group, the third partition group and the fourth partition group along the length direction is greater than or equal to the length of the outer ring bearing part along the length direction, and the combined length of the first partition group and the second partition group along the length direction corresponds to the length of the inner ring bearing part along the length direction.

[0028] As another technical solution, an embodiment of the present invention further provides a semiconductor process equipment, which includes the above-mentioned process chamber provided by an embodiment of the present invention.

[0029] The present invention has the following beneficial effects:

[0030] The air intake assembly provided by the present invention has an air flow adjustment assembly provided at the air outlet of the air intake seat body, and an adjustment channel is formed between two adjacent partitions in the air flow adjustment assembly, and each partition can rotate around the rotation axis to adjust the air outlet direction of the above-mentioned adjustment channel. In this way, when the process gas flowing out of the air outlet passes through the above-mentioned adjustment channel, the air outlet direction of the above-mentioned adjustment channel can be adjusted by rotating the partition, thereby playing a guiding role for the process gas, and then the gas concentration distribution in different areas inside the chamber body can be adjusted to reduce the gas concentration difference between different areas of the corresponding base, and improve the consistency of the epitaxial layer thickness between different areas of the base, so that multiple circles of wafers can be placed on the base while ensuring the consistency of the epitaxial layer thickness, thereby improving production capacity.

[0031] The process chamber provided by the present invention can improve the consistency of epitaxial layer thickness between different areas of the base by adopting the above-mentioned air intake assembly provided by the present invention, so that multiple circles of wafers can be placed on the base while ensuring the consistency of epitaxial layer thickness, thereby improving production capacity.

[0032] The semiconductor process equipment provided by the present invention can improve the consistency of epitaxial layer thickness between different areas of the base by adopting the above-mentioned process chamber provided by the present invention, so that multiple circles of wafers can be placed on the base while ensuring the consistency of epitaxial layer thickness, thereby improving production capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 A side view of a process chamber of a conventional multi-wafer epitaxial growth apparatus;

[0034] Figure 2 A top view of a process chamber of a conventional multi-wafer epitaxial growth device;

[0035] Figure 3 for Figure 1 A distribution diagram of the gas outlet of the gas inlet assembly of the process chamber;

[0036] Figure 4 A structural diagram of the process chamber provided by the embodiment of the present application;

[0037] Figure 5 A sectional view of the gas inlet assembly provided by the embodiment of the present application;

[0038] Figure 6 A structural diagram of a gas flow adjusting assembly used by the embodiment of the present application;

[0039] Figure 7 A structural diagram of another gas flow adjusting assembly used by the embodiment of the present application;

[0040] Figure 8 A Figure 7 A structural diagram of the gas flow adjusting assembly;

[0041] Figure 9 A Figure 7 A sectional view of the gas flow adjusting assembly in the X-Z section;

[0042] Figure 10 A structural diagram of still another gas flow adjusting assembly used by the embodiment of the present application;

[0043] Figure 11 A Figure 10 A sectional view of the gas flow adjusting assembly in the X-Z section;

[0044] Figure 12 A wafer arrangement diagram used by the embodiment of the present application;

[0045] Figure 13 Another wafer arrangement diagram used by the embodiment of the present application. DETAILED DESCRIPTION

[0046] In order to make the technical solution of the present application better understood by the skilled in the art, the gas inlet assembly, the process chamber and the semiconductor process equipment provided by the present application are described in detail below in combination with the drawings.

[0047] Please refer to Figure 4 and Figure 5An embodiment of the present invention provides a process chamber 3, which includes a chamber body 31, a base 32 and an air inlet assembly 2, wherein the air inlet assembly 2 is arranged on one side of the chamber body 31; the base 32 is arranged in the chamber body 31, and is used to carry multiple wafers. Optionally, the base 32 is provided with a plurality of slots 321, for example, and a wafer is placed in each slot 321. Of course, in actual applications, the above-mentioned slots 321 may not be provided. Taking the application of the process chamber 3 to epitaxial growth equipment as an example, the above-mentioned base 32 is rotatable, which helps to form a uniform airflow field and temperature field in the area where the wafer is located in the circumferential direction of the base 32 during the process, thereby improving the consistency of the thickness of the epitaxial layer. In addition, an air outlet assembly 4 is provided on the side of the chamber body 31 opposite to the air inlet assembly 2, which is used to discharge the gas inside the chamber body 31.

[0048] In some optional embodiments, the base 32 is provided with an inner ring bearing portion and an outer ring bearing portion for bearing multiple wafers, and the outer ring bearing portion surrounds the outer side of the inner ring bearing portion. Figure 4 As shown, multiple slots 321 are arranged in two circles along the circumference of the base 32. The slots 321 on the outer circle of the base 32 constitute the outer circle bearing portion C1, while the slots 321 on the inner circle constitute the inner circle bearing portion C2. This significantly increases the number of wafers processed in a single process, thereby improving production capacity. It also ensures consistent epitaxial layer thickness between the outer and inner circle bearing portions C1 and C2. It should be noted that in actual applications, the multiple slots 321 can also be arranged in three or more circles along the circumference of the base 32, and this is not particularly limited in this embodiment of the present invention.

[0049] like Figure 4 and Figure 5 As shown, the air inlet assembly 2 provided in an embodiment of the present invention includes an air inlet seat 21 and an air flow adjustment assembly 5, wherein the air inlet seat 21 has an air outlet 23 for delivering process gas into the process chamber 3. The air outlet 23 may be one or more. Optionally, multiple air outlets 23 are arranged in a row along the length direction (i.e., the Y direction) of the air inlet seat 21, and the length direction of the air inlet seat is perpendicular to the air outlet direction (i.e., the X direction) of the air outlet 23, so that the process gas can be uniformly delivered to the interior of the chamber body 31 in the Y direction. Of course, in actual applications, the shape and size of each air outlet 23, as well as the arrangement of the multiple air outlets 23, can be designed according to specific needs, and the embodiment of the present invention does not have any particular limitations on this.

[0050] The airflow regulating assembly 5 is disposed on one side of the air outlet 23 (ie, on the downstream side of the air outlet 23 in the X direction). Specifically, the airflow regulating assembly 5 can be mounted on the air inlet seat 21 via a fixing member 6, such as a fixing pin.

[0051] Specifically, if Figure 6 As shown, the airflow adjustment component 5 includes a support component 51 and a plurality of partitions 52, wherein the partitions 52 are connected to the support component 51, and the support component 51 is used to support the partitions 52. Optionally, the support component 51 can be fixedly connected to the air intake component 2. Specifically, the support component 51 adopts a frame structure, for example, and the frame structure specifically includes an upper beam and a lower beam arranged relatively along the Z direction, and a fixing plate is connected between the upper beam and the lower beam, and the fixing plate is used to support and fix between the upper beam and the lower beam. The spacing between the upper beam and the lower beam in the Z direction should not be less than the size of the above-mentioned air outlet 23 to ensure that there is no impact on the airflow. Of course, in actual applications, the support component 51 can also adopt any other structure, and the embodiment of the present invention has no special restrictions on this.

[0052] like Figure 6 and Figure 8 As shown, multiple baffles 52 are arranged at intervals along the length direction (i.e., the Y direction) of the inlet seat 21. Adjustment channels 53 are formed between adjacent baffles 52. The baffles 52 can rotate about a rotation axis 52a, which extends along the height direction (i.e., the Z direction) of the inlet seat 21 to adjust the gas outlet direction of the adjustment channel 53. The length direction (i.e., the Y direction) of the inlet seat 21 and the gas outlet direction (i.e., the X direction) of the gas outlet 23 are perpendicular to each other. In this way, the process gas flowing out of each gas outlet 23 flows into the interior of the chamber body 31 through the adjustment channel 53 between each adjacent baffle 52. Figure 8 As shown, each partition 52 is connected to the supporting component 51 (such as the upper and lower beams), and each partition 52 can rotate around the rotation axis 52a so that the angle between the partition 52 and the air outlet direction of the air outlet 23 (i.e., the X direction) is adjustable, so as to be able to adjust the air outlet direction of the adjustment channel 53.

[0053] When the process gas flowing out of the gas outlet 23 passes through the adjustment channel 53 between each adjacent two partitions 52, the gas outlet direction of the above-mentioned adjustment channel can be adjusted by rotating the partition 52, thereby playing a guiding role for the process gas, thereby adjusting the gas concentration distribution in different areas inside the chamber body 31 to reduce the gas concentration difference between different areas of the corresponding base 32.

[0054] Take the difference in gas concentration between the inner ring bearing portion C2 and the outer ring bearing portion C1 on the base 32 as an example. Figure 4As shown, the interior of the chamber body 31 is divided along the length of the inlet seat (i.e., the Y direction) into a central region A and two edge regions (B1, B2) located on either side of the central region A. The central region A is further divided along the length (i.e., the Y direction) into two central sub-regions (A1, A2). In some optional embodiments, the length of the central region A along the length direction is equal to the length of the inner ring bearing portion C2 on the base 32 along the length direction. This allows the airflow direction corresponding to the inner ring bearing portion C2 and the outer ring bearing portion C1 to be adjusted separately, thereby reducing the difference in gas concentration between the inner ring bearing portion C2 and the outer ring bearing portion C1.

[0055] In this case, if Figure 6 As shown, the multiple baffles 52 are divided into four baffle groups, namely the first baffle group, the second baffle group, the third baffle group and the fourth baffle group. The first baffle group and the second baffle group are symmetrically arranged along the length direction (i.e., the Y direction) of the air inlet seat 21, that is, they correspond to the two central sub-areas (A1, A2) respectively; and the air outlet direction of the regulating channels 53 of the first baffle group and the second baffle group is toward the central symmetry axis O of the air inlet seat 21 in the length direction (i.e., the Y direction), and there is an angle a between the air outlet direction and the central symmetry axis O. Figure 6 As shown by the arrows in , the gas outlet direction of the regulating channel 53 corresponding to the first baffle group and the gas outlet direction of the regulating channel 53 corresponding to the second baffle group both converge toward the direction close to the central symmetry axis O, thereby increasing the airflow flowing to the inner ring bearing part C2 to increase the gas concentration in the inner ring bearing part C2.

[0056] The third baffle group and the fourth baffle group are symmetrically arranged on both sides of the first baffle group and the second baffle group along the length direction (i.e., the Y direction) of the air inlet seat 21, that is, the two baffle groups correspond to the two edge areas (B1, B2) respectively; and the air outlet direction of the regulating channel 53 in the third baffle group and the fourth baffle group is away from the central symmetry axis O of the air inlet seat 21 in the length direction (i.e., the Y direction), wherein the air outlet direction of the regulating channel 53 in the third baffle group forms an angle b1 with the central symmetry axis O, and the air outlet direction of the regulating channel 53 in the fourth baffle group forms an angle b2 with the central symmetry axis O. Figure 6 As shown by the arrows in , the gas outlet directions of the regulating channels 53 in the third and fourth baffle groups diverge away from the central symmetry axis O, thereby reducing the airflow toward the outer ring bearing portion C1 and lowering the gas concentration in the outer ring bearing portion C1. This reduces the gas concentration difference between the corresponding inner ring bearing portion C2 and the outer ring bearing portion C1.

[0057] On this basis, in an optional embodiment, as Figure 5As shown, three independent air inlet channels (not shown in the figure) are provided in the air inlet seat 21, and each air inlet channel has multiple air outlets 23, one of which is connected to the regulating channel 53 in the first baffle group and the second baffle group, and the other two air inlet channels are connected to the regulating channels 53 in the third baffle group and the fourth baffle group, respectively. In this way, the three air inlet channels can be used to independently transport the process gas, so that the gas flow out of the air outlets 23 corresponding to the central area A and the two edge areas (B1, B2) can be independently adjusted to reduce the mutual influence of the air flow between the central area A and the two edge areas (B1, B2) of the chamber body 31, thereby not only further improving the consistency of the epitaxial layer thickness between the inner and outer ring areas of the base, but also increasing the means of adjusting the gas concentration distribution in different areas inside the chamber body 31, thereby improving the adjustment flexibility. Of course, in actual applications, the number and layout of the air inlet channels, air inlet channels and air outlets 23 can be adaptively adjusted according to the different internal partitioning methods of the chamber body 31. Optionally, as Figure 5 As shown, the air intake assembly further includes three air intake pipes 24, each air intake pipe 24 is connected to the air inlet of each air intake hole, so as to respectively transport process gas to the three air intake channels.

[0058] From the above, it can be seen that different partition groups can adjust the gas concentration in different areas inside the chamber body 31 by respectively adjusting the gas outlet direction of the adjustment channel 53 corresponding to different areas inside the chamber body 31. For example, by increasing the airflow flowing to the inner ring bearing part C2 and reducing the airflow flowing to the outer ring bearing part C1, the gas concentration difference between the inner ring bearing part C2 and the outer ring bearing part C1 on the base 32 can be reduced, thereby improving the consistency of the epitaxial layer thickness between different areas of the base, and then multiple circles of wafers can be placed on the base while ensuring the consistency of the epitaxial layer thickness, thereby improving production capacity.

[0059] It should be noted that in actual applications, according to the different arrangements of the wafers on the base 32, the number and method of partitions inside the chamber body 31 can be adaptively adjusted, and the outlet direction of the adjustment channel 53 in the partition group corresponding to each partition can be adjusted accordingly.

[0060] There are many ways to achieve the partition 52 being able to rotate around the rotation axis 52a, for example, Figure 8As shown, the support member 51 includes an upper crossbeam 51a and a lower crossbeam 51a, which are arranged relative to each other in the height direction (i.e., in a direction parallel to the rotation axis 52a). Each partition 52 is located between the upper crossbeam 51a and the lower crossbeam 51a, and the upper crossbeam 51a and the lower crossbeam 51a are rotatably connected to the partition 52 via a rotating shaft, the axis of which is the above-mentioned rotation axis 52a. In some optional embodiments, the above-mentioned rotating shaft includes two coaxially arranged rotating pins 55, which respectively rotatably connect the partition 52 to the upper crossbeam 51a and the lower crossbeam 51a.

[0061] In some optional embodiments, in order to enable at least two partitions corresponding to the same partition to be linked, the at least two partitions can be rotated synchronously around the rotation axis 52a, such as Figure 7 As shown, the airflow adjustment assembly 5 further includes at least one linkage member 56, each linkage member 56 being connected to a plurality of partitions 52, for enabling the plurality of partitions 52 connected to the same linkage member 56 to be linked, so that the plurality of partitions 52 have the same rotation angle with respect to , and the partitions 52 connected to different linkage members 56 have different rotation angles. Figure 7 As shown, there are four linkage members 56 , and the four linkage members 56 correspond to four groups of partition plates, respectively, so that all partition plates 52 in the same partition plate group can be linked.

[0062] In some optional embodiments, such as Figure 8 As shown, the linkage 56 includes a crossbar, on which a plurality of limiting portions are arranged at intervals along the length direction (i.e., the Y direction) of the air inlet seat 21. Each limiting portion on the same crossbar is used to define the position of each partition 52 on the crossbar in a one-to-one correspondence. The structure of the limiting portion can be various, for example, Figure 9 As shown, the partition 52 is provided with a through hole 521 that passes through the partition 52 along the length direction (ie, Y direction) of the air inlet seat 21. The above-mentioned cross bar passes through the through hole 521 of each partition 52 corresponding thereto, and, as shown Figure 8 As shown, the limiting portion is a limiting groove 561 formed on the crossbar. The limiting groove 561 is positioned at the edge of the through hole 521 to limit the position of the partition 52 on the crossbar, thereby driving the rotation of the partition 52. In actual application, the through hole 521 can be located near the upstream side of the partition 52 in the X direction, and the height position of the crossbar in the Z direction is set at a position that intersects with the air inlet to minimize the impact of the crossbar on the airflow.

[0063] In some optional embodiments, such as Figure 7As shown in the drawings, the support member 51 is further provided with at least one fixing plate 511, each of which is detachably connected to one end of each of the horizontal rods, so as to limit the position of the horizontal rod in the length direction (i.e. the Y direction) of the air inlet seat body 21, so as to fix the position of each of the baffle plates 52 corresponding to the horizontal rod. In this way, after the horizontal rod is moved in the Y direction to adjust the angle of each of the baffle plates 52 connected to the horizontal rod, the angle position of the baffle plates can be fixed at the current angle position by fixing one end of the horizontal rod and the fixing plate 511 together. One end of the horizontal rod and the fixing plate 511 are connected by screwing, or can be connected by any other detachable manner such as clamping.

[0064] Before the process is performed, the horizontal rod is moved in the Y direction to adjust the angle of each of the baffle plates 52 connected to the horizontal rod, and after the adjustment is completed, the angle position of the baffle plates is fixed at the current angle position, and then the process is performed.

[0065] It should be noted that the way to fix the angle position of the baffle plates at the current angle position is not limited to the above-mentioned way adopted in the embodiment of the present application, for example, a damper can be arranged between at least one of the baffle plates 52 and the support member 51, and the embodiment of the present application does not have a particular limitation.

[0066] It should be further noted that in actual application, according to specific needs, the above-mentioned linkage can also be connected to a driving source to drive the linkage to drive at least two of the baffle plates 52 connected thereto to move together, so as to realize automatic adjustment of the angle of the baffle plates 52. The above-mentioned driving source is, for example, an electric cylinder, a pneumatic cylinder or a hydraulic cylinder.

[0067] In some optional embodiments, as shown in Figure 10 and Figure 11 The air flow adjusting assembly 5 further comprises a uniform flow plate 54, which is fixedly connected to the support member 51 and located between the air outlet 23 and the baffle plates 52. Optionally, as shown in Figure 11 The uniform flow plate 54 can be integrally formed with the support member 51, i.e. the uniform flow plate 54 is integrally connected with each of the fixing plates 511, the upper horizontal beam and the lower horizontal beam, and the uniform flow plate 54 is located on the upstream side of all the baffle plates 52 in the X direction.

[0068] It should be noted that in order to more clearly show the structure of the uniform flow plate 54, Figure 10 The linkage 56 is not shown in the drawings, and in actual application, whether to arrange the linkage 56 can be selected according to specific needs.

[0069] Moreover, the flow plate 54 is provided with a plurality of groups of uniform air holes, the number of which is the same as the number of the regulating channels between two adjacent partitions 52, and is arranged one-to-one. Each group of uniform air holes includes a plurality of uniform air holes 541, and the plurality of uniform air holes 541 are arranged in the height direction (i.e., the Z direction) and / or the length direction (i.e., the Y direction), for example Figure 10 The figure shows that each uniform hole group has three uniform holes 541 spaced apart in the Z direction. The multiple uniform holes 541 on the uniform flow plate 54 can uniformly distribute the process gas flowing out of the gas outlet 23, allowing the process gas to flow more evenly into the regulating channel between each adjacent partition plate 52.

[0070] In some optional embodiments, under the premise of ensuring the consistency of the thickness of the epitaxial layer, an outer ring bearing portion C1 and an inner ring bearing portion C2 are provided on the base 32, for example, two rings of slots 321 are provided to accommodate two rings of wafers, thereby improving the production capacity. Figure 12 As shown, the two rings of slots 321 on the base 32 can be used to place a total of 18 5-inch wafers, wherein the outer ring slots 321 can place 12 5-inch wafers, and the inner ring slots 321 can place 6 5-inch wafers. Figure 13 As shown, the two circles of wafer slots 321 on the base 32 can be used to place a total of 27 4-inch wafers, of which the outer circle of wafer slots 321 can place 17 4-inch wafers, and the inner circle of wafer slots 321 can place 10 4-inch wafers. Of course, in actual applications, according to specific needs, more than three circles of supporting parts can be provided on the base 32, and this embodiment of the present invention is not particularly limited to this.

[0071] To sum up, the air intake assembly provided by the embodiment of the present invention has an air flow adjustment assembly provided at the air outlet of the air intake seat body, and an adjustment channel is formed between two adjacent partitions in the air flow adjustment assembly, and each partition can rotate around the rotation axis to adjust the air outlet direction of the above-mentioned adjustment channel. In this way, when the process gas flowing out of the air outlet passes through the above-mentioned adjustment channel, the air outlet direction of the above-mentioned adjustment channel can be adjusted by rotating the partition, so as to play a guiding role for the process gas, and then the gas concentration distribution in different areas inside the chamber body can be adjusted to reduce the gas concentration difference between different areas of the corresponding base, and improve the consistency of the epitaxial layer thickness between different areas of the base, so that multiple circles of wafers can be placed on the base under the premise of ensuring the consistency of the epitaxial layer thickness, thereby improving production capacity.

[0072] As another technical solution, an embodiment of the present invention further provides a process chamber, which is, for example, Figure 4The process chamber 3 shown includes a chamber body 31, a base 32 and an air intake assembly 2, wherein the air intake assembly 2 is arranged on one side of the chamber body 31; the base 32 is arranged in the chamber body 31 for carrying multiple wafers.

[0073] In some optional embodiments, the base 32 is provided with an inner ring bearing portion and an outer ring bearing portion for bearing multiple wafers, and the outer ring bearing portion surrounds the outer side of the inner ring bearing portion. Figure 4 As shown, multiple slots 321 are arranged in two circles along the circumference of the base 32, wherein the slots 321 located on the outer circle of the base 32 constitute the outer circle bearing portion C1, and the slots 321 located on the inner circle constitute the inner circle bearing portion C2. Figure 6 As shown, multiple partitions 52 are divided into four partition groups, namely the first partition group, the second partition group, the third partition group and the fourth partition group, wherein the combined length of the first partition group, the second partition group, the third partition group and the fourth partition group along the length direction (i.e., Y direction) is greater than or equal to the length of the outer ring bearing part C1 along the length direction (i.e., Y direction) to ensure that the airflow entering the process chamber 3 covers the entire base surface, and the combined length of the above-mentioned first partition group and the second partition group along the length direction (i.e., Y direction) corresponds to the length of the inner ring bearing part C2 along the length direction (i.e., Y direction) to be able to adjust the direction of the airflow flowing to the inner ring bearing part C2.

[0074] The process chamber provided by the embodiment of the present invention can improve the consistency of the epitaxial layer thickness between different areas of the base by adopting the above-mentioned air intake component provided by the embodiment of the present invention, so that multiple circles of wafers can be placed on the base while ensuring the consistency of the epitaxial layer thickness, thereby improving production capacity.

[0075] As another technical solution, an embodiment of the present invention further provides a semiconductor process equipment, which includes the above-mentioned process chamber provided by an embodiment of the present invention.

[0076] The semiconductor process equipment provided by an embodiment of the present invention can improve the consistency of the epitaxial layer thickness between different areas of the base by adopting the above-mentioned process chamber provided by the present invention, so that multiple circles of wafers can be placed on the base while ensuring the consistency of the epitaxial layer thickness, thereby improving production capacity.

[0077] It will be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications and improvements can be made without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. An air intake assembly, used in a process chamber of a semiconductor process equipment, characterized in that: The air intake assembly includes an air intake seat and an air flow adjustment assembly, wherein: The gas inlet seat has a gas outlet for delivering process gas into the process chamber; The airflow adjustment component is arranged on one side of the air outlet and includes a supporting component and a plurality of partitions, wherein the partition is connected to the supporting component, and the supporting component is used to support the partition. The plurality of partitions are arranged at intervals along the length direction of the air inlet seat body, and an adjustment channel is formed between two adjacent partitions. The partition can rotate around a rotation axis, and the rotation axis extends along the height direction of the air inlet seat body to adjust the air outlet direction of the adjustment channel; the length direction of the air inlet seat body and the air outlet direction of the air outlet are perpendicular to each other. In which, the airflow adjustment component also includes at least one linkage part, each of which is connected to multiple partitions, for enabling multiple partitions connected to the same linkage part to be linked so that the multiple partitions can rotate at the same angle, and different linkage parts are connected to different partitions.

2. The air intake assembly according to claim 1, characterized in that The linkage member includes a cross bar, and a plurality of limiting portions are arranged on the cross bar at intervals along the length direction. The limiting portions on the same cross bar are used to limit the positions of the partitions on the cross bar in a one-to-one correspondence.

3. The air intake assembly according to claim 2, characterized in that The partition is provided with a through hole that passes through the partition along the length direction, the cross bar passes through the through holes of each corresponding partition, and the limiting portion is a limiting groove formed on the cross bar, and the limiting groove is clamped at the edge of the through hole.

4. The air intake assembly according to claim 1, characterized in that The airflow adjustment component also includes a flow equalizer plate, which is fixedly connected to the support component and is located between the air outlet and the partition. A plurality of groups of air equalizer holes are provided on the flow equalizer plate, and the plurality of groups of air equalizer holes are arranged one-to-one corresponding to the plurality of adjustment channels. Each group of the air equalizer holes includes a plurality of air equalizer holes, and the plurality of air equalizer holes are arranged in the height direction and / or the length direction.

5. The air intake assembly according to any one of claims 1 to 4, characterized in that: The supporting component includes an upper beam and a lower beam, the upper beam and the lower beam are arranged opposite to each other along the height direction, the partition is located between the upper beam and the lower beam, and the upper beam and the lower beam are rotatably connected to the partition through a rotating shaft.

6. The air intake assembly according to claim 5, characterized in that The rotating shaft includes two coaxially arranged rotating pins, and the two rotating pins respectively rotatably connect the partition with the upper beam and the lower beam.

7. The air intake assembly according to any one of claims 1 to 4, characterized in that: The plurality of partitions are divided into four partition groups, namely the first partition group, the second partition group, the third partition group and the fourth partition group, wherein: The first baffle group and the second baffle group are symmetrically arranged along the length direction; The third baffle plate group and the fourth baffle plate group are symmetrically arranged on both sides of the first baffle plate group and the second baffle plate group along the length direction; The air outlet directions of the regulating channels of the first baffle group and the second baffle group are toward the central symmetry axis of the air inlet seat in the longitudinal direction; The air outlet directions of the regulating channels of the third baffle group and the fourth baffle group are away from the central symmetry axis of the air inlet seat body in the longitudinal direction.

8. The air intake assembly according to claim 7, characterized in that Three independent air intake channels are provided in the air intake seat body, each of the air intake channels has multiple air outlets, one of the air intake channels is connected to the adjustment channels in the first baffle group and the second baffle group, and the other two air intake channels are respectively connected to the adjustment channels in the third baffle group and the fourth baffle group.

9. A process chamber, characterized in that: It comprises a chamber body, a base and an air intake assembly according to any one of claims 1 to 8, wherein the air intake assembly is arranged on one side of the chamber body, and the base is arranged in the chamber body for carrying multiple wafers.

10. The process chamber according to claim 9, wherein: The base is provided with an inner ring bearing part and an outer ring bearing part for bearing a plurality of the wafers, and the outer ring bearing part surrounds the outer side of the inner ring bearing part; The plurality of partitions are divided into four partition groups, namely the first partition group, the second partition group, the third partition group and the fourth partition group, wherein: The first baffle group and the second baffle group are symmetrically arranged along the length direction; The third baffle plate group and the fourth baffle plate group are symmetrically arranged on both sides of the first baffle plate group and the second baffle plate group along the length direction; The air outlet directions of the regulating channels of the first baffle group and the second baffle group are toward the central symmetry axis of the air inlet seat in the longitudinal direction; The air outlet directions of the regulating channels of the third baffle group and the fourth baffle group are away from the central symmetry axis of the air inlet seat in the longitudinal direction; The combined length of the first partition group, the second partition group, the third partition group and the fourth partition group along the length direction is greater than or equal to the length of the outer ring bearing part along the length direction, and the combined length of the first partition group and the second partition group along the length direction corresponds to the length of the inner ring bearing part along the length direction.

11. A semiconductor process equipment, characterized in that: Comprising the process chamber according to claim 9 or 10.

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