A high-voltage pulse switch device

Abstract

The present application relates to a high-voltage pulse switch device, comprising a gate assembly, a gate pressure seal assembly, a chip assembly and a parallel copper ring assembly, wherein the gate assembly is fixedly connected to the upper end of the gate pressure seal assembly, the chip assembly is arranged inside the gate pressure seal assembly, and the parallel copper ring is connected below the chip assembly. The parallel copper ring assembly cleverly solves the isolation problem between multi-chip circuit topologies, and multi-chip packaging can realize switching devices of different power levels. In addition, the pulse switch is suitable for a large turn-off current and a high blocking voltage. It can also reduce the impact of environmental factors such as vibration, impact, high and low temperature cycles, and salt spray on the product to a reasonable range.

Description

Technical Field

[0001] The present application relates to the field of power electronics, and in particular to a high-voltage pulse switching device. Background Art

[0002] The pulse power system is a complex system, in which the pulse power switch is the core component of the pulse power system. Its function is to control the conduction or disconnection of the system electrical circuit. It should usually have the characteristics of compact structure, long life, short conduction delay, small conduction delay jitter, and strong current capacity.

[0003] Traditional pulse power switches typically use wires or copper busbars to connect discrete components. These connections are made via metal bolts or insulated bolts, and the ohmic contact at the joints requires pressure to maintain. With the continuous advancement of semiconductor technology, the demand for volume-to-power ratios is becoming increasingly stringent. This is especially true for systems with shutdown currents of 10kA to 100kA and blocking voltages of 5kV to 20kV, which place stringent volume requirements. This is primarily intended to reduce the impact of stray parameters and the challenges of implementing internal insulation and various circuit topologies in specialized applications such as ships. However, existing technologies are unable to effectively address these challenges. Summary of the Invention

[0004] Based on this, it is necessary to address the above technical problems. An embodiment of the present invention provides a high-voltage pulse switch device, including: a gate assembly, a gate pressure seal assembly, a chip assembly and a parallel copper ring assembly. The gate assembly is fixedly connected to the upper end of the gate pressure seal assembly, the chip assembly is arranged inside the gate pressure seal assembly, and the parallel copper ring is connected below the chip assembly.

[0005] Furthermore, the gate assembly includes: a first gate group, screws and a spring plate, the first gate group passes through the middle hole of the spring plate, and a positioning hole is provided at each end of the spring plate, and the screws pass through the positioning holes respectively.

[0006] Furthermore, the gate pressure sealing assembly includes: a gate pressure block, a pressure ring, a copper plate, a base plate and an outer shell. The gate pressure block is a hollow nut structure. The first gate assembly is threadedly connected to the gate pressure block. The gate pressure block passes through the center hole of the pressure ring. The outer shell is a hollow structure and is provided with double screw holes on the outer wall. The screws pass through the double screw holes respectively.

[0007] Furthermore, the copper plate and the bottom plate are arranged at the bottom end of the shell, the copper plate is arranged on the upper surface of the bottom plate, the bottom plate is provided with double nut holes, and the screws are respectively connected to the double nut holes.

[0008] Furthermore, the chip assembly includes an upper gate copper block, a gate transition gasket, and a thyristor chip. The upper gate copper block contacts the lower surface of the pressure ring, and the gate transition gasket is arranged between the upper gate copper block and the thyristor chip.

[0009] Furthermore, the chip assembly also includes a cathode transition piece, an insulating conductive block, and a diode chip. The cathode transition piece is connected to the lower side of the thyristor chip, the insulating conductive block is located between the cathode transition piece and the diode chip, and the diode chip is located on the upper surface of the copper plate.

[0010] Furthermore, the parallel copper ring assembly includes several copper ring monomers and a double-headed gate copper block connection group. The double-headed gate copper block connection group is arranged in the copper ring monomer cavity and passes through the copper ring monomer. The copper ring monomers are connected in parallel. One end of the parallel copper ring assembly is arranged at the bottom end of the chip assembly, and the other end is arranged on the upper side of the diode chip.

[0011] Furthermore, the copper ring monomer includes a double inner ear annular structure, and the insulating material sprayed on the inner part of the annular structure of the copper ring monomer is Teflon.

[0012] Furthermore, the thickness of the Teflon is in the range of 30 to 60 μm.

[0013] Furthermore, the applicable shutoff current range of the parallel copper ring assembly is 10KA~100KA, and the applicable blocking voltage range is 5KV~20KV.

[0014] The beneficial effects of the present application are as follows: an embodiment of the present invention provides a high-voltage pulse switch device, comprising a gate assembly, a gate pressure seal assembly, a chip assembly and a parallel copper ring assembly, wherein the gate assembly is fixedly connected to the upper end of the gate pressure seal assembly, the chip assembly is arranged inside the gate pressure seal assembly, and the parallel copper ring is connected below the chip assembly. The parallel copper ring assembly cleverly solves the isolation problem between multi-chip circuit topologies, and multi-chip packaging can realize switching devices of different power levels. The pulse switch is suitable for a larger turn-off current and a higher blocking voltage. It can also reduce the impact of environmental factors such as vibration, impact, high and low temperature cycles, and salt spray on the product to a reasonable range. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 A schematic diagram of the structure of a high-voltage pulse switch in one embodiment;

[0016] Figure 2 Schematic diagram of the structure of a pulse switch in an embodiment in which no copper ring assembly is provided;

[0017] Figure 3 A schematic diagram of the disassembly and assembly of a high-voltage pulse switch according to an embodiment;

[0018] Figure 4 Schematic diagram of the structure of a copper ring monomer in a high-voltage pulse switch in one embodiment. DETAILED DESCRIPTION

[0019] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0020] This embodiment aims to provide a multi-chip packaged pulse power module with an optimized power-to-volume ratio. This module can be expanded from a single-chip system to a multi-chip package. Its lower stray inductance improves the current-shutoff capability of a switch assembly comprised of the same chips. This module fully considers the impact of environmental factors such as vibration, shock, high-temperature cycling, and salt spray, offering unique advantages in both mechanical design and material selection.

[0021] In one embodiment, Figures 1 to 3 As shown, this embodiment provides a high-voltage pulse switch device, including: a gate assembly, a gate pressure seal assembly, a chip assembly and a parallel copper ring assembly, the gate assembly is fixedly connected to the upper end of the gate pressure seal assembly, the chip assembly is arranged inside the gate pressure seal assembly, and the parallel copper ring is connected below the chip assembly.

[0022] Specifically, this embodiment mainly adopts specially designed interconnection and insulation technology to Figure 2 The packaging method is used to realize the circuit topology. The functions of each part are as follows: the power chip can be selected according to the switching power and the requirements of the occasion. In theory, dozens of chips can be connected in parallel to achieve a greater current shutoff capability. However, it is limited by the parallel technology of traditional bipolar power chips. Through simulation and implementation, this embodiment found that when the number of chips in parallel is more than 6, the damage to the chip caused by uneven current distribution is difficult to control. Therefore, the number of chips in parallel in this embodiment is n≤6. The diodes with reverse recovery function and the components with basic insulation function are interconnected through insulating copper strips or copper blocks. After the overall assembly, the corresponding torque is applied to form a small pulse switch module of the required power level. The parallel copper ring assembly cleverly solves the isolation problem between multi-chip circuit topologies. The multi-chip packaging can realize switching devices of different power levels. The pulse switch is suitable for larger shutoff currents and higher blocking voltages.

[0023] Furthermore, the gate assembly includes: a first gate group 1, a screw 2 and a spring plate 3, the first gate group 1 passes through the middle hole of the spring plate 3, and a positioning hole is provided at each end of the spring plate 3, and the screw 2 passes through the positioning holes respectively.

[0024] Preferably, the gate pressure seal assembly includes: a gate pressure block 8, a pressure ring 4, a copper plate 13, a bottom plate 14, and a housing 11. The gate pressure block 8 has a hollow nut structure. The first gate assembly 1 is threadedly connected to the gate pressure block 8. The gate pressure block 8 passes through the center hole of the pressure ring 4. The housing 11 has a hollow structure and is provided with double screw holes on the outer wall. The screws 2 pass through the double screw holes. Furthermore, the copper plate 13 and bottom plate 14 are arranged at the bottom end of the housing 11. The copper plate 13 is arranged on the upper surface of the bottom plate 14. The bottom plate 14 is provided with double nut holes. The screws 2 are respectively connected to the double nut holes.

[0025] Preferably, the chip assembly includes an upper gate copper block 5, a gate transition gasket 6, and a thyristor chip 7. The upper gate copper block 5 is in contact with the lower surface of the pressure ring 4, and the gate transition gasket 6 is arranged between the upper gate copper block 5 and the thyristor chip 7. Furthermore, the chip assembly also includes a cathode transition piece 9, an insulating conductive block 10, and a diode chip 12. The cathode transition piece 9 is connected to the lower side of the thyristor chip 7, the insulating conductive block 10 is located between the cathode transition piece 9 and the diode chip 12, and the diode chip 12 is located on the upper surface of the copper plate 13. The thyristor chip 78 includes but is not limited to a gate turn-off thyristor. The internal electrode voltage isolation in the figure is achieved by plastic coating the outer end of copper. Of course, different processes such as dipping, spraying, vulcanization, etc. can be selected according to the voltage resistance level and different pressure requirements. This embodiment requires that the tracking index of the insulating material used should be CTI≤500.

[0026] In addition, the gate controllable chip in this embodiment is a copper ring assembly, in which the parallel copper ring monomer 16 and the diode chip 12 achieve ohmic contact through the insulating conductive block 10, and a transition conductive sheet with a thermal expansion coefficient close to that of the chip is used between the thyristor chip 7 and the diode chip 12. The main purpose is to ensure the mechanical friction between the contact metals caused by thermal stress. The preferred material can be molybdenum. The insulating conductive block 10 can adopt a variety of insulation methods to achieve voltage isolation, such as plastic dipping. The copper ring assembly is stacked with a gate transition gasket 6, an upper gate copper block 5, a gate pressure block 8, a pressure ring 4, a spring plate 3, and a first gate group 1 in sequence, and is fastened and clamped by screws 2 and a base plate 14. The internal chips are all positioned by the shell 11, and the shell 11 plays the role of isolating the upper and lower anode and cathode voltages.

[0027] Furthermore, the parallel copper ring assembly includes a plurality of copper ring monomers 16 and a double-headed gate copper block connection group 15. The double-headed gate copper block connection group 15 is arranged in the cavity of the copper ring monomer 16 and passes through the copper ring monomer 16. The copper ring monomers 16 are connected in parallel. One end of the parallel copper ring assembly is arranged at the bottom of the chip assembly, and the other end is arranged on the upper side of the diode chip 12. It is worth noting that the two end pieces of the parallel copper ring assembly structure are elastic during the assembly process. The internal chip can be assembled to form a module structure first and then connected in series with the rest of the structure. Due to the limitation of processing accuracy, the thickness of each component should be selected before assembly, and the final thickness deviation should be ≤15μm.

[0028] like Figure 4 As shown, the copper ring 16 comprises a double-ring structure, with the inner portion of the ring being sprayed with Teflon insulation. Furthermore, the Teflon thickness ranges from 30 to 60 μm. The parallel copper rings 16 utilize a special groove design to connect the two anodes of the chip while also providing assembly positioning. Furthermore, the inner portion of the ring is insulated from the cathode by spraying a high-grade insulation material, such as Teflon.

[0029] Furthermore, the applicable shutoff current range of the parallel copper ring assembly is 10KA~100KA, and the applicable blocking voltage range is 5KV~20KV.

[0030] Those skilled in the art will understand that all or part of the processes in the above-mentioned embodiment methods can be implemented by instructing related hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods.

[0031] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

Claims

1. A high voltage pulse switch device, characterized in that: include: A gate assembly, a gate pressure seal assembly, a chip assembly and a parallel copper ring assembly, wherein the gate assembly is fixedly connected to the upper end of the gate pressure seal assembly, the chip assembly is arranged inside the gate pressure seal assembly, and the parallel copper ring is connected below the chip assembly; The gate assembly includes: a first gate group, screws and a spring plate, the first gate group passes through the middle hole of the spring plate, and a positioning hole is provided at each end of the spring plate, and the screws pass through the positioning holes respectively; The gate pressure seal assembly includes: a gate pressure block, a pressure ring, a copper plate, a bottom plate and a shell. The gate pressure block is a hollow nut structure. The first gate group and the gate pressure block are threadedly connected. The gate pressure block passes through the center hole of the pressure ring. The shell is a hollow structure and is provided with double screw holes on the outer wall. The screws pass through the double screw holes respectively. The chip assembly includes an upper gate copper block, a gate transition gasket, and a thyristor chip. The upper gate copper block contacts the lower surface of the pressure ring, and the gate transition gasket is arranged between the upper gate copper block and the thyristor chip. The chip assembly further includes a cathode transition piece, an insulating conductive block, and a diode chip, wherein the cathode transition piece is connected to the lower side of the thyristor chip, the insulating conductive block is located between the cathode transition piece and the diode chip, and the diode chip is located on the upper surface of the copper plate; The parallel copper ring assembly includes several copper ring monomers and a double-headed gate copper block connection group. The double-headed gate copper block connection group is arranged in the copper ring monomer cavity and passes through the copper ring monomer. The copper ring monomers are connected in parallel. One end of the parallel copper ring assembly is arranged at the bottom end of the chip assembly, and the other end is arranged on the upper side of the diode chip.

2. The high-voltage pulse switch device according to claim 1, characterized in that: The copper plate and the bottom plate are arranged at the bottom end of the shell, the copper plate is arranged on the upper surface of the bottom plate, the bottom plate is provided with double nut holes, and the screws are connected with the double nut holes respectively.

3. The high-voltage pulse switch device according to claim 1, characterized in that: The copper ring monomer comprises a double inner ear annular structure, and the insulating material sprayed on the inner side of the annular structure of the copper ring monomer is Teflon.

4. The high-voltage pulse switch device according to claim 3, characterized in that: The thickness of the Teflon is in the range of 30 to 60 μm.

5. The high-voltage pulse switch device according to claim 1, characterized in that: The applicable range of the shutoff current of the parallel copper ring assembly is 10KA to 100KA, and the applicable range of the blocking voltage is 5KV to 20KV.

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