Supersymmetric semiconductor lasers and their applications

Abstract

The present disclosure relates to a supersymmetric semiconductor laser and its application, wherein the supersymmetric semiconductor laser comprises: a main array, wherein at least a portion of the waveguide layer of the main array has an active region to provide gain to promote fundamental transverse mode lasing; and a super-paired array, disposed beside the main array and obtained by supersymmetric transformation, wherein the waveguide layer of the super-paired array is a passive region to generate loss and dissipate high-order transverse modes; wherein the supersymmetric transformation can filter out the eigenvalue corresponding to the fundamental transverse mode of the main array from the super-paired array, while retaining the eigenvalues ​​of at least a portion of the high-order transverse modes of the main array. The main array and the super-paired array are coupled to form a supersymmetric semiconductor laser in the epitaxial direction, achieving laser output mainly in the fundamental transverse mode, reducing the vertical far-field divergence angle of the semiconductor laser, and improving the transverse beam quality of the semiconductor laser.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor lasers, and in particular, to a supersymmetric semiconductor laser and applications thereof. Background Art

[0002] Semiconductor lasers have high electro-optical conversion efficiency, good beam coherence, and are compact. Therefore, they are often used in solid-state lasers and optical lasers for pumping, optical coupling, and material processing.

[0003] However, the epitaxial structure of traditional semiconductor lasers, on the one hand, has a small geometric size in the epitaxial direction, so the near-field size of the fundamental transverse mode of the semiconductor laser is small, and the corresponding vertical far-field divergence angle is large, which is not conducive to the optical coupling between the semiconductor laser and the optical element, and requires an expensive external beam shaping system; on the other hand, the traditional semiconductor laser lacks microstructures in the epitaxial direction to regulate the optical mode, resulting in unstable mode characteristics. Its optical characteristics are easily affected by changes in the injected carrier concentration and temperature, which is not conducive to the stable operation of the system. Summary of the Invention

[0004] In view of this, the present disclosure provides a supersymmetric semiconductor laser and its application to solve at least one of the above-mentioned technical problems and other aspects.

[0005] To achieve the above objectives, one aspect of the present disclosure provides a supersymmetric semiconductor laser, comprising: a main array, wherein at least a portion of the waveguide layer of the main array has an active region to provide gain to promote fundamental transverse mode lasing; and a super-paired array, disposed adjacent to the main array and obtained by supersymmetric transformation, wherein the waveguide layer of the super-paired array is a passive region to generate loss and dissipate higher-order transverse modes; wherein the supersymmetric transformation can filter out the eigenvalue corresponding to the fundamental transverse mode of the main array from the super-paired array, while retaining the eigenvalues ​​of at least a portion of the higher-order transverse modes of the main array; the main array and the super-paired array are coupled to form a supersymmetric semiconductor laser in the epitaxial direction, thereby achieving laser output dominated by the fundamental transverse mode.

[0006] According to an embodiment of the present disclosure, the supersymmetric semiconductor laser further includes: an N-type side electrode, which is configured to provide an electric injection channel for the laser; an N-type substrate layer, which is arranged on the N-type side electrode to support the semiconductor chip; an N-type confinement layer, which is arranged between the N-type substrate layer and the coupling array composed of the main array and the super-paired array to limit the expansion of the light field; a first confinement layer, which is arranged between the main array and the super-paired array to connect the main array and the super-paired array; a P-type confinement layer, which is arranged on the coupling array composed of the main array and the super-paired array and is formed with a boss to limit the expansion of the light field; a P-type contact layer, which is arranged on the boss of the P-type confinement layer; a P-side insulating layer, which is arranged on the P-type confinement layer and part of the P-type contact layer, and forms an electrode window on the P-type contact layer to limit the injection range of the current; and a P-type side electrode, which is arranged on the P-side insulating layer and the P-type contact layer, which is configured to provide an electric injection channel for the laser and forms an ohmic contact with the P-type contact layer.

[0007] According to an embodiment of the present disclosure, the main array includes: multiple layers of first waveguide layers for coupling with each other and generating different supermodes; multiple layers of second confinement layers, each of which is disposed between two adjacent first waveguide layers to separate the first waveguide layers; and a core layer disposed in the middle of or in the middle of a portion of the first waveguide layer that contacts the P-type confinement layer, the core layer being undoped and having an active region for recombination of carriers and generation of photons.

[0008] According to an embodiment of the present disclosure, a super-paired array includes: multiple layers of second waveguide layers to couple high-order transverse modes in a main array; and a third confinement layer disposed between two adjacent second waveguide layers to separate the second waveguide layers in the super-paired array.

[0009] According to the embodiments of the present disclosure, the number of super-paired arrays and their positions in the epitaxial direction can be varied, including: the super-paired arrays are located on the N-type side of the semiconductor laser, on the P-type side of the semiconductor laser, or on both the N-type side and the P-type side.

[0010] According to an embodiment of the present disclosure, the number of first waveguide layers of the main array is N0; the number of second waveguide layers of the super-paired array is N1, and is obtained by the supersymmetric transformation of the main array; wherein N0 and N1 are both positive integers greater than or equal to 1.

[0011] According to an embodiment of the present disclosure, the supersymmetric transformation adopts QR decomposition, where Q is an orthogonal matrix and R is an upper triangular matrix; the coupled mode theory used in the supersymmetric transformation process is a tight binding model.

[0012] According to an embodiment of the present disclosure, the supersymmetric transformation process includes: Step S1: According to the matrix transformation , find the matrices Q and R, where H0 is the Hamiltonian of the main array, is the eigenvalue of a main array that needs to be filtered out from the super-paired array; Step S2: According to the matrix transformation Obtaining the Hamiltonian H1 of the super-paired array, where H1 is the Hamiltonian of the super-paired array and N-1 represents the first N-1 rows and N-1 columns of the matrix being determined. Step S3: Obtaining the width of the second waveguide layer and the spacing between the waveguide layers of the super-paired array based on the matrix elements of H1. Wherein, H0 is a tridiagonal matrix whose matrix elements are determined by the width of the first waveguide layer, the waveguide spacing, and the refractive index distribution of the main array. The supersymmetric transformation may be performed multiple times in succession to filter out multiple eigenvalues ​​in the main array from the super-paired array.

[0013] According to an embodiment of the present disclosure, the pumping method of the supersymmetric semiconductor laser is electrical injection.

[0014] According to an embodiment of the present disclosure, a supersymmetric semiconductor laser is applied in the field of semiconductor lasers.

[0015] According to the above-mentioned embodiment of the present disclosure, a supersymmetric semiconductor laser and its application are constructed by utilizing supersymmetric transformation to construct a super-paired array of a known main array, and the two are coupled to each other, so that the loss of high-order transverse modes is increased and the loss of fundamental transverse modes is reduced, thereby obtaining laser output mainly based on the fundamental transverse mode in the epitaxial direction of the laser, reducing the vertical far-field divergence angle of the laser, and improving the transverse beam quality of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a cross-sectional view of a supersymmetric semiconductor laser according to an embodiment of the present disclosure;

[0017] Figure 2A-2E yes Figure 1 The electric field distribution of different supermodes of the supersymmetric semiconductor laser shown;

[0018] Figure 3 yes Figure 1 The distribution of optical confinement factors and propagation constants of different supermodes of the supersymmetric semiconductor laser shown;

[0019] Figure 4 is a cross-sectional view of a supersymmetric semiconductor laser according to another embodiment of the present disclosure;

[0020] Figures 5A-5F yes Figure 4 The electric field distribution diagrams of different super modes of the supersymmetric semiconductor laser shown; and

[0021] Figure 6 yes Figure 4 The distribution of optical confinement factors and propagation constants of different supermodes of the supersymmetric semiconductor laser shown.

[0022] Description of Reference Numerals

[0023] 1 Main array

[0024] 11. First waveguide layer

[0025] 12 Second Restriction Layer

[0026] 13 core layer

[0027] 2 Superpairing Array

[0028] 21 Second waveguide layer

[0029] 22 Third Restriction Layer

[0030] 3 N-type side

[0031] 31 N-type side electrode

[0032] 32 N-type substrate layer

[0033] 33 N-type confinement layer

[0034] 4 First Restriction Layer

[0035] 5 P-type side

[0036] 51 P-type confinement layer

[0037] 52 P-type contact layer

[0038] 53 P-side insulation layer

[0039] 54 P-type side electrode DETAILED DESCRIPTION

[0040] In order to make the objectives, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0041] The epitaxial structure of traditional semiconductor lasers has a small geometric size in the epitaxial direction, so the near-field size of the fundamental transverse mode of the laser is small, and the corresponding vertical far-field divergence angle is large, which is not conducive to the optical coupling between the laser and the optical element, and requires an expensive external beam shaping system; and the traditional semiconductor laser lacks microstructures in the epitaxial direction to regulate the optical mode, resulting in unstable mode characteristics. Its optical characteristics are easily affected by changes in the injected carrier concentration and temperature, which is not conducive to the stable operation of the system.

[0042] To this end, according to the general inventive concept of one aspect of the present disclosure, a supersymmetric semiconductor laser is provided, comprising: a main array, wherein at least a portion of the waveguide layer of the main array has an active region to provide gain to promote fundamental transverse mode lasing; and a super-paired array, disposed beside the main array and obtained by supersymmetric transformation, wherein the waveguide layer of the super-paired array is a passive region to generate loss and dissipate high-order transverse modes; wherein the supersymmetric transformation can filter out the eigenvalue corresponding to the fundamental transverse mode of the main array from the super-paired array, while retaining the eigenvalues ​​of at least a portion of the high-order transverse modes of the main array; the main array and the super-paired array are coupled to each other to form a supersymmetric semiconductor laser in the epitaxial direction, thereby achieving laser output mainly in the fundamental transverse mode.

[0043] According to another aspect of the general inventive concept of the present disclosure, a supersymmetric semiconductor laser is provided for application in the field of semiconductor lasers.

[0044] The above-mentioned supersymmetric semiconductor laser and its application utilize supersymmetric transformation to construct a super-paired array of a known main array, and couple the two to each other, so that the loss of high-order transverse modes is increased and the loss of fundamental transverse modes is reduced, thereby obtaining laser output dominated by fundamental transverse modes in the epitaxial direction of the laser, reducing the vertical far-field divergence angle of the laser, and improving the transverse beam quality of the laser.

[0045] The following specific embodiments are listed to illustrate the technical solutions of the present disclosure in detail. It should be noted that the following specific embodiments are only for illustration and are not intended to limit the present disclosure.

[0046] Figure 1 is a cross-sectional view of a supersymmetric semiconductor laser according to an embodiment of the present disclosure.

[0047] like Figure 1 As shown, the present disclosure provides a supersymmetric semiconductor laser, comprising: a main array 1 and a super-paired array 2, wherein at least a portion of the waveguide layer of the main array 1 has an active region to provide gain to promote fundamental transverse mode lasing; the super-paired array 2, disposed below the main array, is obtained by supersymmetric transformation, and the waveguide layer of the super-paired array 2 is a passive region to generate loss and dissipate high-order transverse modes. The supersymmetric transformation can filter out the eigenvalues ​​corresponding to the fundamental transverse mode of the main array 1 from the super-paired array 2, while retaining the eigenvalues ​​of at least a portion of the high-order transverse modes of the main array 1. The main array 1 and the super-paired array 2 are coupled to each other to form a supersymmetric semiconductor laser in the epitaxial direction, achieving laser output dominated by the fundamental transverse mode.

[0048] According to an embodiment of the present disclosure, the supersymmetric semiconductor laser further includes: an N-type side electrode 31 configured to provide an electric injection channel for the laser; an N-type substrate layer 32 disposed on the N-type side electrode 31 for supporting the semiconductor chip; an N-type confinement layer 33 disposed between the N-type substrate layer 32 and the coupling array formed by the main array 1 and the super-paired array 2, for limiting the expansion of the light field; a first confinement layer 4 disposed between the main array 1 and the super-paired array 2 for connecting the main array 1 and the super-paired array 2; and a first confinement layer 4 disposed between the main array 1 and the super-paired array 2 for connecting the main array 1 and the super-paired array 2. A P-type confinement layer 51 is provided on the coupling array, and the P-type confinement layer 51 is formed with a boss for limiting the expansion of the light field; a P-type contact layer 52 is provided on the boss of the P-type confinement layer 51; a P-side insulating layer 53 is provided on the P-type confinement layer 51 and a part of the P-type contact layer 52, and an electrode window is formed on the P-type contact layer 52 for limiting the injection range of the current; a P-type side electrode 54 is provided on the P-side insulating layer 53 and the P-type contact layer 52, for providing an electric injection channel for the laser, and at the same time, the P-type side electrode 54 and the P-type contact layer 52 form an ohmic contact.

[0049] According to an embodiment of the present disclosure, the doping type of the first confinement layer 4 is determined by its location on the semiconductor laser epitaxy.

[0050] According to an embodiment of the present disclosure, the main array 1 includes: multiple layers of first waveguide layers 11, multiple layers of second confinement layers 12, and a core layer 13, wherein the first waveguide layers 11 are used to couple with each other and generate different supermodes; each second confinement layer 12 in the second confinement layers 12 is arranged between two adjacent first waveguide layers 11 to separate the first waveguide layers 11; the core layer 13 is located in the middle of the first waveguide layer 11 or in the middle of a portion of the first waveguide layer 11 that contacts the P-type confinement layer 51. The core layer 13 is undoped and has an active region for recombination of carriers and generation of photons.

[0051] According to an embodiment of the present disclosure, the doping types of the first waveguide layer 11 and the second confinement layer 12 are determined by the position of the active region of the semiconductor laser and the number of groups of the active regions.

[0052] According to an embodiment of the present disclosure, the active region in the core layer 13 includes: quantum wells or quantum dots.

[0053] According to an embodiment of the present disclosure, the super-paired array 2 includes multiple layers of second waveguide layers 21 and third confinement layers 22, wherein the second waveguide layers 21 are used to couple high-order transverse modes in the main array 1; and the third confinement layers 21 are arranged between two adjacent second waveguide layers 21 to separate the second waveguide layers 21 in the super-paired array 2.

[0054] According to an embodiment of the present disclosure, the doping types of the second waveguide layer 21 and the third confinement layer 22 are determined by their locations on the semiconductor laser epitaxy.

[0055] According to the embodiments of the present disclosure, the number of super-paired arrays 2 and their positions in the epitaxial direction can be varied, including: the super-paired array 2 is located on the N-type side 3 of the semiconductor laser, on the P-type side 5 of the semiconductor laser, or on both the N-type side 3 and the P-type side 5.

[0056] According to an embodiment of the present disclosure, the number of first waveguide layers 11 in the main array 1 is N0; the number of second waveguide layers 21 in the super-paired array 2 is N1, and both are obtained by a supersymmetric transformation of the main array 1. Both N0 and N1 are positive integers greater than or equal to 1. This supersymmetric transformation filters out the eigenvalues ​​corresponding to the fundamental transverse mode of the main array 1 from the super-paired array 2, while retaining the eigenvalues ​​of all or some of the higher-order transverse modes of the main array 1.

[0057] According to an embodiment of the present disclosure, the supersymmetric transformation adopts QR decomposition, where Q is an orthogonal matrix and R is an upper triangular matrix. The coupled mode theory used in the supersymmetric transformation process is a tight-binding model, that is, only the coupling between adjacent waveguides is considered.

[0058] According to an embodiment of the present disclosure, the supersymmetric transformation process includes: Step S1: According to the matrix transformation , find the matrices Q and R, where H0 is the Hamiltonian of the main array 1, is the eigenvalue of a main array that needs to be filtered out from the super-paired array; Step S2: according to the matrix transformation Obtain the Hamiltonian H1 of the super-paired array, where H1 is the Hamiltonian of super-paired array 2, and N-1 represents the first N-1 rows and N-1 columns of the matrix being determined. Step S3: Determine the width of the second waveguide layer 21 and the spacing between waveguide layers of super-paired array 2 based on the matrix elements of H1. H0 in step S1 is a tridiagonal matrix, and its matrix elements are determined by the width, waveguide spacing, and refractive index profile of the first waveguide layer 11 of main array 1. The supersymmetric transformation in step S2 can be performed multiple times to filter out multiple eigenvalues ​​of main array 1 from super-paired array 2.

[0059] According to the embodiments of the present disclosure, the width of the first waveguide layer 11 of the main array 1, the spacing between the waveguide layers, and the refractive index distribution of the main array 1 are used to determine the propagation constant of each waveguide layer in the first waveguide layer 11 and the coupling constant between the first waveguide layers 11. Continuous supersymmetric transformations are used to obtain the propagation constant of the second waveguide layer 21 of the superpaired array 2 and the coupling constant between the second waveguide layers 21, thereby determining the width of each waveguide layer in the second waveguide layer 21 and the spacing between the waveguide layers. Supersymmetric transformations are used to construct a superpaired array 2 of the known main array 1, and the two are coupled to each other, thereby increasing the loss of high-order transverse modes and reducing the loss of the fundamental transverse mode, thereby obtaining laser output dominated by the fundamental transverse mode, reducing the vertical far-field divergence angle of the laser, and improving the transverse beam quality of the laser.

[0060] According to embodiments of the present disclosure, a supersymmetric transformation can be performed multiple times in succession, i.e., a higher-order supersymmetric transformation, to filter out multiple eigenvalues ​​in the main array 1 from the superpairing array 2. For example, the matrix H1 can be subjected to another supersymmetric transformation to once again filter out the eigenvalues ​​of another mode in the main array 1.

[0061] According to an embodiment of the present disclosure, the supersymmetric transformation is a first-order or higher-order supersymmetric transformation, and the eigenvalue corresponding to the fundamental transverse mode of the main array 1 can be filtered out in the super-paired array 2 through the supersymmetric transformation.

[0062] According to an embodiment of the present disclosure, the pumping method of the supersymmetric semiconductor laser is electrical injection.

[0063] According to an embodiment of the present disclosure, a supersymmetric semiconductor laser is applied in the field of semiconductor lasers.

[0064] According to an embodiment of the present disclosure, the above-mentioned N-type substrate layer 32, N-type confinement layer 33, first waveguide layer 11 and second confinement layer 12 in the main array 1 and the second waveguide layer 21 and third confinement layer 22, first confinement layer 4, core layer 13, P-type confinement layer 51 and P-type contact layer 52 in the super-paired array 2 are all made of semiconductor materials.

[0065] According to the embodiments of the present disclosure, a supersymmetric semiconductor laser is manufactured using semiconductor processing techniques such as thin film growth, epitaxial growth, exposure, and etching, without requiring any special process.

[0066] like Figure 1 In the embodiment shown, a super-paired array 2 of the main array 1 is constructed by two consecutive supersymmetric transformations. The super-paired array 2 can couple the high-order transverse modes of the main array 1 and limit the expansion of the fundamental transverse mode of the main array 1.

[0067] Reference Figure 1 , the thickness of the N-type substrate layer 32 is 150 , the refractive index is 3.5255; the thickness of the N-type confinement layer 33 is 1 , the refractive index is 3.3625.

[0068] The second waveguide layer 21 in the super-paired array 2 has two waveguide layers, with thicknesses of 0.525 and 0.66 mm, respectively. , 0.587 , the refractive index is 3.418; the thickness of the third confinement layer 22 is 0.274 , the refractive index is 3.3625.

[0069] The thickness of the first restriction layer 4 is 0.2 , the refractive index is 3.3625.

[0070] The first waveguide layer 11 in the main array 1 has four waveguide layers, with thicknesses of 0.45 , 0.45 , 0.45 , 0.6 , the refractive index is 3.418; the second limiting layer 12 has three layers, and the thickness is 0.2 , the refractive index is 3.3625; the thickness of the core layer 13 is 0.044 , the equivalent refractive index is 3.5533.

[0071] The thickness of the P-type confinement layer 51 is 1.25 , the refractive index is 3.3063; the thickness of the P-type contact layer 52 is 0.15 , the refractive index is 3.5255.

[0072] Figure 2A-2E yes Figure 1 The electric field distribution of different supermodes of the supersymmetric semiconductor laser shown; Figure 3 yes Figure 1 The distribution of optical confinement factors and propagation constants of different supermodes of the supersymmetric semiconductor laser shown.

[0073] like Figure 2A-2E As shown, the horizontal axis of each sub-graph in Figure 2 represents the spatial position in the extension direction x, and the unit is ; The corresponding vertical axis is the magnitude of the electric field. Figures 2A-2D The high-order transverse modes in are extended to the super-paired array 2, and Figure 2E The fundamental transverse mode in the super-paired array 2 is slightly expanded. Therefore, the fundamental transverse mode of the coupled supersymmetric semiconductor laser has the largest confinement factor in the active region, corresponding to Figure 3 The black arrows in the figure point to the data points, while the remaining data points correspond to the confinement factors of higher-order transverse modes.

[0074] like Figure 3 As shown, the horizontal axis represents the propagation constant of each mode, and the unit is The vertical axis represents the confinement factor of different modes. The fundamental transverse mode of the supersymmetric semiconductor laser obtained through this coupling exhibits the highest confinement factor in the active region. When electrical injection is applied to this supersymmetric semiconductor laser, the fundamental transverse mode achieves the highest gain, while the remaining higher-order transverse modes achieve less gain. Therefore, the fundamental transverse mode is preferentially emitted, resulting in a single-lobe vertical far-field distribution and high transverse beam quality for the output laser. Furthermore, the large refractive index difference of the waveguide structure along the epitaxial direction ensures that the laser's performance does not vary significantly with temperature or carrier concentration.

[0075] Figure 4 FIG. 4 is a cross-sectional view of a supersymmetric semiconductor laser according to another embodiment of the present disclosure.

[0076] like Figure 4 As shown, in this embodiment, the super-paired array 2 is obtained by performing a supersymmetric transformation on the Hamiltonian of the main array 1, and each first waveguide layer of the main array 1 has a core layer.

[0077] According to the embodiment of the present disclosure, referring to Figure 4 , the thickness of the N-type substrate layer 32 is 150 , the refractive index is 3.5255; the thickness of the N-type confinement layer 33 is 1 , the refractive index is 3.3625.

[0078] The second waveguide layer 21 in the super-paired array 2 has two waveguide layers, with thicknesses of 0.876 , 0.782 , the refractive index is 3.418; the thickness of the third confinement layer 22 is 0.667 , the refractive index is 3.3625.

[0079] The thickness of the first restriction layer 4 is 0.82 , the refractive index is 3.3625.

[0080] The first waveguide layer 11 in the main array 1 has three waveguide layers, with thicknesses of 0.52 , 0.48 , 0.6 , the refractive index is 3.418; the second limiting layer 12 has two layers, the thickness is 0.75 , 0.65 , the refractive index is 3.3625; the core layer 13 has three layers, and the thickness is 0.044 , the equivalent refractive index is 3.5533.

[0081] The thickness of the P-type confinement layer 51 is 1.25 , the refractive index is 3.3063; the thickness of the P-type contact layer 52 is 0.15 , the refractive index is 3.5255.

[0082] Figures 5A-5F yes Figure 4 The electric field distribution of different supermodes of the supersymmetric semiconductor laser shown; Figure 6 yes Figure 4 The distribution of optical confinement factors and propagation constants of different supermodes of the supersymmetric semiconductor laser shown.

[0083] like Figures 5A-5F As shown in Figure 5, the horizontal axis of each sub-graph represents the spatial position in the extension direction x, and the unit is The corresponding ordinate is the electric field magnitude. A superpaired array of the main array 1 is constructed through a supersymmetric transformation. This superpaired array 2 can couple the high-order transverse modes of the main array 1 while limiting the expansion of the fundamental transverse mode of the main array 1. Figures 5A-5E The higher-order modes in are all extended to the super-paired array 2, and Figure 5F The fundamental transverse mode in the super-paired array is slightly expanded. Therefore, the confinement factor of the fundamental transverse mode of the coupled supersymmetric laser is the largest in the active region, corresponding to Figure 6 The black arrows in the figure point to the data points, while the remaining data points correspond to the confinement factors of higher-order transverse modes.

[0084] like Figure 6 As shown, the horizontal axis represents the propagation constant of each mode, and the unit is ; The vertical axis is the confinement factor of different modes. The second confinement layer 12 of the main array 1 includes a tunnel junction, which connects the various waveguide layers of the main array 1 together. When electrical injection is performed on this supersymmetric semiconductor laser, the fundamental transverse mode will obtain the maximum gain while the gains obtained by the other high-order transverse modes are small, so the fundamental transverse mode will be preferentially lasered, and the vertical far field of the laser is a single-lobe distribution, and the transverse beam quality of the output laser is high. In addition, the waveguide structure in the epitaxial direction has a large refractive index difference, and the performance of the laser does not change much with temperature and carrier concentration. Finally, multiple groups of active regions are lasered simultaneously to increase the output power of the laser.

[0085] According to the above-mentioned embodiments of the present disclosure, for supersymmetric semiconductor lasers and their applications, the propagation constant of each waveguide layer in the first waveguide layer and the coupling constant between the first waveguide layers are determined by the width of the first waveguide layer of the main array, the spacing between the waveguide layers, and the refractive index distribution of the main array. Continuous supersymmetric transformations are used to obtain the propagation constant of the second waveguide layer of the superpaired array and the coupling constant between the second waveguide layers, thereby determining the width of each waveguide layer in the second waveguide layer and the spacing between the waveguide layers. Supersymmetric transformations are used to construct a superpaired array of a known main array, and the two are coupled to each other, thereby increasing the loss of high-order transverse modes and reducing the loss of the fundamental transverse mode, thereby obtaining laser output dominated by the fundamental transverse mode in the epitaxial direction of the laser, reducing the vertical far-field divergence angle of the laser, and improving the transverse beam quality of the laser.

[0086] It should also be noted that directional terms such as "upper," "lower," "front," "back," "left," and "right" mentioned in the embodiments are merely references to the directions in the accompanying drawings and are not intended to limit the scope of protection of this disclosure. Throughout the drawings, identical elements are represented by identical or similar reference numerals. Conventional structures or configurations will be omitted where they may cause confusion in understanding this disclosure.

[0087] Furthermore, the shapes and sizes of the components in the figures do not reflect actual size and proportion, but are merely illustrative of the contents of the embodiments of the present disclosure. Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.

[0088] Similarly, it should be understood that in order to streamline the present disclosure and aid in understanding one or more of the various inventive aspects, in the above description of exemplary embodiments of the present disclosure, various features of the present disclosure are sometimes grouped together into a single embodiment, figure, or description thereof. However, this inventive approach should not be interpreted as reflecting an intention that the claimed disclosure requires more features than are expressly recited in each claim. Rather, as reflected in the claims below, inventive aspects lie in less than all the features of a single embodiment of the preceding invention. Accordingly, the claims that follow the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of the present disclosure.

[0089] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present disclosure. It should be understood that the above are only specific embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the scope of protection of the present disclosure.

Claims

1. A supersymmetric semiconductor laser, comprising: A main array (1), wherein at least a portion of the waveguide layer of the main array (1) has an active region to provide gain to promote fundamental transverse mode lasing; as well as At least one super-paired array (2) is arranged at any position in the extension direction of the main array (1), and the at least one super-paired array (2) is obtained by supersymmetric transformation. The waveguide layer of the super-paired array (2) is a passive region to generate loss and dissipate high-order transverse modes. At least one super-paired array is located on the N-type side (3) of the semiconductor laser, on the P-type side (5) of the semiconductor laser, or on both the N-type side (3) and the P-type side (5); The supersymmetric transformation can filter out the eigenvalue corresponding to the fundamental transverse mode of the main array from the super-paired array, while retaining the eigenvalues ​​of at least a portion of the high-order transverse modes of the main array. The main array (1) and the super-paired array (2) are coupled to each other to form a supersymmetric semiconductor laser in the epitaxial direction. By electrically injecting the laser, a current is formed in the main array and at least one of the super-paired arrays, thereby realizing laser output mainly in the fundamental transverse mode.

2. The supersymmetric semiconductor laser according to claim 1, further comprising: An N-type side electrode (31) is configured to provide an electric injection channel for the laser; An N-type substrate layer (32) is provided on the N-type side electrode (31) to support the semiconductor chip; An N-type limiting layer (33) is provided between the N-type substrate layer (32) and a coupling array formed by the main array (1) and the super-pairing array (2) to limit the expansion of the light field; a first restriction layer (4) disposed between the main array (1) and the super-pairing array (2) to connect the main array (1) and the super-pairing array (2); A P-type limiting layer (51) is provided on a coupling array formed by the main array (1) and the super-pairing array (2), and is formed with a boss to limit the expansion of the light field; A P-type contact layer (52) is provided on the boss of the P-type restriction layer (51); A P-side insulating layer (53) is provided on the P-type limiting layer (51) and a portion of the P-type contact layer (52), and forms an electrode window on the P-type contact layer (52) to limit the injection range of the current; A P-type side electrode (54) is provided on the P-side insulating layer (53) and the P-type contact layer (52), is configured to provide an electric injection channel for the laser, and forms an ohmic contact with the P-type contact layer (52).

3. The supersymmetric semiconductor laser according to claim 1, wherein: The main array (1) comprises: Multiple first waveguide layers (11) are used for mutual coupling and generating different supermodes; a plurality of second limiting layers (12), each second limiting layer (12) being arranged between two adjacent first waveguide layers (11) to separate the first waveguide layers (11); and A core layer (13) is arranged in the middle of a first waveguide layer (11) or in the middle of a portion of the first waveguide layer (11) contacting a P-type confinement layer (51), wherein the core layer (13) is undoped and has an active region for recombining carriers and generating photons.

4. The supersymmetric semiconductor laser according to claim 1, wherein: The super-pairing array (2) comprises: a multi-layer second waveguide layer (21) to couple high-order transverse modes in the main array (1); and The third limiting layer (22) is arranged between two adjacent layers of the second waveguide layers (21) to separate the second waveguide layers (21) in the super-paired array.

5. The supersymmetric semiconductor laser according to claim 1, wherein: The number of the first waveguide layers (11) of the main array (1) is N0; The number of the second waveguide layers (21) of the super-paired array (2) is N1, and they are obtained by the supersymmetric transformation of the main array (1); Wherein, N0 and N1 are both positive integers greater than or equal to 1.

6. The supersymmetric semiconductor laser according to claim 1, wherein: The supersymmetric transformation adopts QR decomposition, where Q is an orthogonal matrix and R is an upper triangular matrix; The coupled mode theory used in the supersymmetric transformation process is the tight-binding model.

7. The supersymmetric semiconductor laser according to claim 1, wherein: The supersymmetric transformation process includes: Step S1: According to matrix transformation , find the matrices Q and R; Among them, H0 is the Hamiltonian of the main array, is the eigenvalue of a main array that needs to be filtered out from the super-paired array; Step S2: According to matrix transformation Obtain the Hamiltonian H1 of the superpairing array; Where H1 is the Hamiltonian of the superpairing array, and N-1 means taking the first N-1 rows and N-1 columns of the matrix to be calculated; Step S3: Calculating the width of the second waveguide layer and the spacing between the waveguide layers of the super-paired array according to the matrix element of H1; Where H0 is a tridiagonal matrix, and the matrix elements of H0 are determined by the width, waveguide spacing, and refractive index distribution of the first waveguide layer of the main array; The supersymmetric transformation may be performed multiple times in succession to filter out multiple eigenvalues ​​in the main array from the superpairing array.

8. The supersymmetric semiconductor laser according to claim 1, wherein: The supersymmetric semiconductor laser is pumped by electric injection.

9. Use of the supersymmetric semiconductor laser according to any one of claims 1 to 8 in the field of semiconductor lasers.

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