Dicing and die bonding integrated film, method for manufacturing the same, and method for manufacturing a semiconductor device

Abstract

The present invention discloses a dicing die bonding integrated film. The dicing die bonding integrated film comprises: a base material layer, a pressure-sensitive adhesive layer having a first surface facing the base material layer and a second surface opposite thereto, and an adhesive layer arranged to cover the central portion of the second surface. The pressure-sensitive adhesive layer comprises a first region and a second region, wherein the first region includes a region corresponding to the attachment position of the wafer in the adhesive layer, and the second region is arranged to surround the first region, and the first region is a region in a state where the adhesive strength is reduced compared to the second region. In the pressure-sensitive adhesive layer, the difference between the adhesive strength of the first region of the pressure-sensitive adhesive layer to the adhesive layer and the adhesive strength of the second region of the pressure-sensitive adhesive layer to the adhesive layer measured under specified conditions is 6.5 to 9.0 N / 25 mm.

Description

Technical Field

[0001] The present invention relates to a dicing-die bonding integrated film, a manufacturing method thereof, and a manufacturing method of a semiconductor device. Background Art

[0002] Semiconductor devices are manufactured through the following steps: First, a dicing step is performed with a dicing pressure-sensitive adhesive film attached to the wafer. Subsequently, an expansion step, a pickup step, a mounting step, and a die bonding step are performed.

[0003] In the manufacturing process of semiconductor devices, a film called a dicing die bonding integrated film is used. The film has a structure in which a base material layer, a pressure-sensitive adhesive layer and an adhesive layer are stacked in sequence, and is used, for example, as follows. First, the surface on the adhesive layer side is attached to the wafer, and the wafer is diced while being fixed with a dicing ring. Thus, the wafer is singulated into a plurality of chips. Next, the pressure-sensitive adhesive layer is irradiated with active energy rays to weaken the bonding force of the pressure-sensitive adhesive layer to the adhesive layer, and thereafter, the chip is picked up from the pressure-sensitive adhesive layer together with the adhesive sheet into which the adhesive layer is singulated. Thereafter, the semiconductor device is manufactured through a process of mounting the chip on a substrate via the adhesive sheet. In addition, a laminate consisting of the chip obtained through the dicing process and the adhesive sheet attached thereto is called DAF (Die Attach Film).

[0004] As described above, a pressure-sensitive adhesive layer (cut-die film) whose adhesive strength is weakened by irradiation with active energy rays is called an active energy ray-curing type. In contrast, a pressure-sensitive adhesive layer whose adhesive strength remains constant without irradiation with active energy rays in the manufacturing process of a semiconductor device is called a pressure-sensitive type. For users (mainly semiconductor device manufacturers), a dicing die bonding integrated film having a pressure-sensitive pressure-sensitive adhesive layer has the following advantages: there is no need to implement a process of irradiating active energy rays, and no equipment is required for the process. In Patent Document 1, it can be said to be an active energy ray-curing type in that the pressure-sensitive adhesive layer contains a component that is cured by active energy rays. On the other hand, a film of a dicing die bonding integrated film is disclosed, which can also be said to be a pressure-sensitive type in that only a specified portion of the pressure-sensitive adhesive layer is pre-irradiated with active energy rays, and the user does not need to irradiate active energy rays in the manufacturing process of the semiconductor device.

[0005] Previous technical literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent No. 4443962 Summary of the Invention

[0008] Technical issues to be solved by the invention

[0009] Generally, the pressure-sensitive adhesive layer of the die-bonding integrated film requires a low bonding strength between the pressure-sensitive adhesive layer and the adhesive layer. If the bonding strength is too high, there may be a pick-up error during the chip picking process and the yield is reduced. However, the present inventors have found that if the chip to be produced becomes smaller due to the die cutting (for example, the area in the top view is 0.1 to 9 mm 2 ), the chip pickup performance is not necessarily determined by the adhesive strength between the pressure-sensitive adhesive layers, but rather by the peeling of the chip edge from the pressure-sensitive adhesive layer (hereinafter referred to as "edge peel"). In other words, it is speculated that the pickup performance of small chips is primarily determined by the edge peel strength of the chip with the adhesive sheet attached. Once edge peeling occurs due to upward push by the pin, subsequent interfacial peeling between the pressure-sensitive adhesive layers proceeds smoothly.

[0010] As an influencing factor of edge peel strength, for example, the curing shrinkage of the pressure-sensitive adhesive layer can be cited. Usually, after the crystal cutting process, burrs (chips) generated by mixing the adhesive layer, the pressure-sensitive adhesive layer and the wafer are generated on the crystal cutting line. If the pressure-sensitive adhesive layer is an active energy ray-cured type, the burrs (chips) and the pressure-sensitive adhesive layer are cured due to the irradiation of the active energy rays, thereby possibly causing the edge peel strength to increase significantly. In the case where the pressure-sensitive adhesive layer is pre-cured before the crystal cutting process, it is not necessary to implement the process of irradiating active energy rays, so there is no such influence, but the anchoring effect on the adhesive layer interface caused by the curing shrinkage of the pressure-sensitive adhesive layer may cause the edge peel strength to increase. The inventors of the present invention have conducted in-depth research on the curing shrinkage of the pressure-sensitive adhesive layer and have found that the greater the difference in the bonding force of the pressure-sensitive adhesive layer to the adhesive layer before and after irradiation of the active energy rays, the higher the curing shrinkage tends to be. Therefore, the inventors of the present invention believe that by adjusting the difference between the adhesive strength of the pressure-sensitive adhesive layer before irradiation with active energy rays and the adhesive strength of the pressure-sensitive adhesive layer after irradiation with active energy rays (in other words, the difference between the adhesive strength of the pressure-sensitive adhesive layer in the non-irradiated part of the active energy rays and the adhesive strength of the pressure-sensitive adhesive layer in the irradiated part of the active energy rays), the edge peeling strength can be weakened, and are committed to the development of a dicing die bonding integrated film with excellent pickup properties.

[0011] The main purpose of the present invention is to provide a dicing die bonding integrated film and a manufacturing method thereof, wherein the dicing die bonding integrated film is used for singulating a wafer into a plurality of small chips (area 0.1 to 9 mm 2 ) process for manufacturing a semiconductor device, and having a pressure-sensitive adhesive layer with excellent pickup properties.

[0012] Means for solving technical problems

[0013] One aspect of the present invention relates to a dicing and die-bonding integrated film. The film comprises a substrate layer, a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive having a first surface facing the substrate layer and a second surface opposite the first surface, and an adhesive layer disposed so as to cover the central portion of the second surface. The pressure-sensitive adhesive layer comprises a first region and a second region, the first region including at least an area corresponding to the wafer attachment position in the adhesive layer, and the second region surrounding the first region. The first region is a region whose bonding strength is reduced compared to the second region due to irradiation with active energy rays. In the pressure-sensitive adhesive layer, the bonding force of the first area of ​​the pressure-sensitive adhesive layer to the adhesive layer measured at a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm / min is f1 (N / 25mm), and the bonding force of the second area of ​​the pressure-sensitive adhesive layer to the adhesive layer measured at a temperature of 23°C, a peeling angle of 30°, and a peeling speed of 60 mm / min is f2 (N / 25mm). The difference between f2 and f1 (f2-f1) is 6.5 to 9.0 N / 25mm. This film is used for wafer singulation into 0.1 to 9 mm 2 A semiconductor device manufacturing process that involves multiple chip processes with a large area.

[0014] According to the above-mentioned dicing die bonding integrated film, since it can suppress the curing shrinkage of the pressure-sensitive adhesive layer to weaken the edge peeling strength, it can be applied to the process of singulating a wafer into a plurality of small chips (0.1 to 9 mm). 2 area) and can achieve excellent pickup properties from the pressure-sensitive adhesive layer.

[0015] The difference between f2 and f1 (f2-f1) can be 7.0 to 9.0 N / 25 mm.

[0016] From the perspective of achieving better pickup properties from the pressure-sensitive adhesive layer, f1 (the adhesive force of the first region to the adhesive layer measured at a temperature of 23°C, a peel angle of 30°, and a peel speed of 60 mm / min) can be 1.1 to 4.5 N / 25 mm or 1.1 to 3.0 N / 25 mm.

[0017] To prevent loop peeling during the die-cutting process, the second region of the pressure-sensitive adhesive layer should have an adhesive strength of 0.2 N / 25 mm or greater to the stainless steel substrate. This adhesive strength refers to the peel strength measured at a temperature of 23°C, a peel angle of 90°, and a peel rate of 50 mm / min.

[0018] The active energy ray-curable pressure-sensitive adhesive may include a (meth)acrylic resin having a chain-polymerizable functional group. When including such a (meth)acrylic resin, the functional group may be at least one selected from an acryloyl group and a methacryloyl group, and the content of the functional group in the (meth)acrylic resin may be 0.1 to 1.2 mmol / g.

[0019] The active energy ray-curable pressure-sensitive adhesive may further include a crosslinking agent. When such a crosslinking agent is included, the crosslinking agent content may be 0.1 to 15% by mass relative to the total mass of the active energy ray-curable pressure-sensitive adhesive. The crosslinking agent may be a reaction product of a polyfunctional isocyanate having two or more isocyanate groups per molecule and a polyol having three or more hydroxyl groups per molecule.

[0020] The irradiation dose of active energy rays can be 10 to 1000 mJ / cm 2 .

[0021] The adhesive layer may be composed of an adhesive composition comprising a (meth)acrylic acid copolymer containing reactive groups, a curing accelerator, and a filler.

[0022] One aspect of the present invention relates to a method for manufacturing a dicing-die-bonding integrated film. The method sequentially comprises: forming a laminate on a surface of a substrate layer, the laminate comprising a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive and an adhesive layer formed on the surface of the pressure-sensitive adhesive layer; and irradiating a region of the pressure-sensitive adhesive layer included in the laminate with active energy rays, the region serving as a first region.

[0023] One aspect of the present invention relates to a method for manufacturing a semiconductor device. The method comprises: preparing the aforementioned dicing and die-bonding integrated film; attaching a wafer to the adhesive layer of the dicing and die-bonding integrated film and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer; singulating the wafer into a plurality of chips; picking up the chips from the pressure-sensitive adhesive layer along with the adhesive sheets formed by singulating the adhesive layer; and mounting the chips on a substrate or another chip via the adhesive sheet.

[0024] That is, the manufacturing method comprises: a process of preparing a cutting die bonding integrated film, wherein the cutting die bonding integrated film comprises a base material layer, a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive having a first surface facing the base material layer and a second surface opposite to the first surface, and an adhesive layer arranged in a manner covering the central portion of the second surface of the pressure-sensitive adhesive layer; a process of attaching a wafer to the adhesive layer of the cutting die bonding integrated film and attaching a cutting ring to the second surface of the pressure-sensitive adhesive layer; a process of singulating the wafer into a plurality of chips; a process of picking up the chip from the pressure-sensitive adhesive layer together with the adhesive sheet formed by singulating the adhesive layer; and a process of mounting the chip on a substrate or other chip via the adhesive sheet. The pressure-sensitive adhesive layer includes a first region corresponding to the region to which the wafer is attached, and a second region corresponding to the region to which the diced ring is attached. The first region exhibits reduced adhesive strength compared to the second region due to irradiation with active energy rays. In the pressure-sensitive adhesive layer, the adhesive strength of the first region to the adhesive layer, measured at a temperature of 23°C, a peel angle of 30°, and a peel rate of 60 mm / min, is f1 (N / 25 mm). The adhesive strength of the second region to the adhesive layer, measured at a temperature of 23°C, a peel angle of 30°, and a peel rate of 60 mm / min, is f2 (N / 25 mm). The difference between f2 and f1 (f2-f1) is 6.5 to 9.0 N / 25 mm.

[0025] Effects of the Invention

[0026] According to the present invention, a dicing die bonding integrated film and a manufacturing method thereof are provided, wherein the dicing die bonding integrated film is used for singulating a wafer into a plurality of small chips (area 0.1 to 9 mm 2 ) process, and includes a pressure-sensitive adhesive layer having excellent pickup properties. Furthermore, according to the present invention, a method for manufacturing a semiconductor device using such a dicing-die bonding integrated film is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 middle, Figure 1 (a) is a top view showing an embodiment of a dicing die bonding integrated film, Figure 1 (b) is along Figure 1 Schematic cross-sectional view of line BB shown in (a).

[0028] Figure 2 This is a schematic diagram showing a state in which a dicing ring is attached to the peripheral edge of the pressure-sensitive adhesive layer of the dicing die bonding integrated film, and a wafer is attached to the surface of the adhesive layer.

[0029] Figure 3It is a cross-sectional view schematically showing a state of measuring the 30° peel strength of a pressure-sensitive adhesive layer against an adhesive layer.

[0030] Figure 4 This is a schematic cross-sectional view of one embodiment of a semiconductor device.

[0031] Figure 5 middle, Figure 5 (a) Figure 5 (b) Figure 5 (c) and Figure 5 (d) is a cross-sectional view schematically showing a process of manufacturing a DAF (a laminate of a chip and an adhesive sheet).

[0032] Figure 6 It is a schematic representation of the manufacturing Figure 4 A cross-sectional view of a semiconductor device during manufacturing is shown.

[0033] Figure 7 It is a schematic representation of the manufacturing Figure 4 A cross-sectional view of a semiconductor device during manufacturing is shown.

[0034] Figure 8 It is a schematic representation of the manufacturing Figure 4 A cross-sectional view of a semiconductor device during manufacturing is shown.

[0035] Figure 9 middle, Figure 9 (a) Figure 9 (b) and Figure 9 (c) is a cross-sectional view schematically showing the step of measuring the edge peel strength.

[0036] Figure 10 This is a graph showing an example of the relationship between displacement (mm) and thrust (N) due to pushing.

[0037] Figure 11 It is a plan view schematically showing a state in which a mark is attached to a position corresponding to the center portion of a chip to be measured. DETAILED DESCRIPTION

[0038] Below, embodiments of the present invention are described in detail with reference to the accompanying drawings. In the following description, identical or corresponding parts are denoted by the same reference numerals, and repeated descriptions are omitted. The present invention is not limited to the following embodiments. In this specification, "(meth)acrylic acid" refers to acrylic acid or methacrylic acid, and other similar expressions such as (meth)acrylates are also used.

[0039] <Dicing and Die Bonding Integrated Film>

[0040] Figure 1 (a) is a top view showing the dicing-die bonding integrated film according to this embodiment. Figure 1 (b) is along Figure 1 The dicing die bonding integrated film 10 (hereinafter sometimes simply referred to as "film 10") can be used for singulating a wafer W into pieces of 0.1 to 9 mm. 2 The manufacturing process of semiconductor devices with multiple chips of the same area (and the subsequent pick-up process) (refer to Figure 5 (c) and Figure 5 (d)).

[0041] The film 10 comprises, in this order, a substrate layer 1, a pressure-sensitive adhesive layer 3 having a first surface F1 facing the substrate layer 1 and a second surface F2 opposite to the first surface F1, and an adhesive layer 5 provided so as to cover the central portion of the second surface F2 of the pressure-sensitive adhesive layer 3. In this embodiment, a laminate of a single pressure-sensitive adhesive layer 3 and an adhesive layer 5 is formed on a square substrate layer 1, but a laminate of the pressure-sensitive adhesive layer 3 and the adhesive layer 5 may also be provided in which the substrate layer 1 has a predetermined length (e.g., 100 m or longer) and the pressure-sensitive adhesive layer 3 and the adhesive layer 5 are arranged at predetermined intervals along the longitudinal direction thereof.

[0042] (Pressure-sensitive adhesive layer)

[0043] The pressure-sensitive adhesive layer 3 includes a first region 3 a including at least a region Rw corresponding to a bonding position of the wafer W in the adhesive layer 5 , and a second region 3 b provided so as to surround the first region 3 a . Figure 1 (a) and Figure 1 The dotted line in (b) indicates the boundary between the first region 3a and the second region 3b. The first region 3a and the second region 3b are composed of the same composition (active energy ray-curable pressure-sensitive adhesive) before irradiation with active energy rays. The first region 3a is a region where the adhesive strength is reduced compared to the second region 3b due to irradiation with active energy rays. The second region 3b is a region where the wafer ring DR is attached (reference Figure 2 The second region 3b is an area not irradiated with active energy rays and has a high bonding strength to the cut crystal ring DR. The active energy rays may be at least one selected from ultraviolet rays, electron beams, and visible light, and may be ultraviolet rays. The irradiation dose of the active energy rays may be, for example, 10 to 1000 mJ / cm 2 100~700mJ / cm 2 or 200-500 mJ / cm 2 .

[0044] When the adhesive strength of the first region 3a of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 is f1 (N / 25mm), and the adhesive strength of the second region 3b of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 is f2 (N / 25mm), the difference between f2 and f1 (f2-f1) is 6.5 to 9.0 N / 25mm, and can be 7.0 to 9.0 N / 25mm. Here, f1 and f2 are 30° peel strengths measured at a temperature of 23°C, a peel angle of 30°, and a peel rate of 60 mm / min. Figure 3 It is a cross-sectional view schematically showing a state in which the 30° peel strength of the pressure-sensitive adhesive layer 3 is measured in a state in which the adhesive layer 5 of a measurement sample (width 25 mm×length 100 mm) is fixed to a support plate 80 . Figure 3 The second region 3b of the pressure-sensitive adhesive layer 3 is the region in the same state as the pressure-sensitive adhesive layer before irradiation with active energy rays, and can also be called the active energy ray non-irradiation region. Therefore, f2 can be Figure 3 The pressure-sensitive adhesive layer 3 in the film is replaced with the pressure-sensitive adhesive layer 3 without the first region 3a and the bonding strength is measured. Since the state of the pressure-sensitive adhesive layer 3 without the first region 3a is the state before the pressure-sensitive adhesive layer is irradiated with active energy rays, f2 can be obtained, for example, in the following manner: on the surface of the substrate layer 1, a laminate comprising a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive and an adhesive layer 5 formed on the surface of the pressure-sensitive adhesive layer is used, and before irradiation with active energy rays, the bonding strength of the pressure-sensitive adhesive layer (the pressure-sensitive adhesive layer 3 without the first region 3a) to the adhesive layer 5 is measured. By making (f2-f1) within this range, the curing shrinkage of the pressure-sensitive adhesive layer can be suppressed to weaken the edge peeling strength, and thus it can be applied to processes including singulating a wafer into a plurality of small chips (with an area of ​​0.1 to 9 mm 2 ) and can achieve excellent pickup properties from the pressure-sensitive adhesive layer 3. (f2-f1) can be 6.6 N / 25 mm or more, 6.8 N / 25 mm or more, 7.0 N / 25 mm or more, or 7.2 N / 25 mm or less, or 8.8 N / 25 mm or less, 8.6 N / 25 mm or less, 8.4 N / 25 mm or less, or 8.2 N / 25 mm or less.

[0045] As described above, the film 10 can also be suitably used for wafer singulation into 0.1 to 9 mm pieces. 2 The present inventors have focused on a semiconductor device manufacturing process with a size of 3mm×3mm or less (area 9mm 2As a result of studying the difference in the pickup behavior of a small chip (e.g., 8 mm × 6 mm in size) and the pickup behavior of a large chip, for example, having a size of about 8 mm × 6 mm, the difference (f2-f1) between the adhesive force of the second region 3b of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 and the adhesive force of the first region 3a of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 was determined to be 6.5 to 9.0 N / 25 mm. The inventors have so far found that edge peeling is the dominant factor in the pickup property in small chips, and the main reason for the increase in edge peeling strength is curing shrinkage. They also found that by setting (f2-f1) to 6.5 to 9.0 N / 25 mm, curing shrinkage can be suppressed, and excellent pickup property from the pressure-sensitive adhesive layer 3 can be achieved. Thus, by using the film 10, semiconductor devices can be manufactured with a sufficiently high yield.

[0046] The adhesive force (f1) of the first region 3a of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 can be, for example, 1.1 to 4.5 N / 25mm or 1.1 to 3.0 N / 25mm. f1 can be 1.2 N / 25mm or greater, 1.5 N / 25mm or greater, or 2.0 N / 25mm or less, or 4.0 N / 25mm or less, 3.7 N / 25mm or less, 3.5 N / 25mm or less, 3.2 N / 25mm or less, or 3.0 N / 25mm or less.

[0047] The first region 3a having the above-mentioned adhesive force on the adhesive layer 5 is a region formed by irradiation with active energy rays, and can also be referred to as an active energy ray irradiation region. The inventors of the present invention have also found that the reduction in the adhesive force of the pressure-sensitive adhesive layer due to irradiation with active energy rays affects the peeling of the edge portion of the DAF. That is, if the adhesive force of the first region 3a is excessively reduced due to irradiation with active energy rays, the 30° peel strength of the first region 3a to the adhesive layer 5 is reduced. On the other hand, when the object to be picked up is a small chip, the edge portion of the DAF tends to be difficult to peel off, and it is easy for the chip to break due to excessive deformation or pick-up errors. The lower limit of the adhesive force of the first region 3a to the adhesive layer 5 (for example, 1.1N / 25mm) can also be referred to as a value that does not excessively reduce the adhesive force before irradiation with active energy rays. Therefore, even for small chips, the peeling of the edge portion of the DAF is easy to occur. On the other hand, if the adhesive force of the first region 3a to the adhesive layer 5 is too high, the pickup property tends to decrease. The upper limit of the adhesive strength of the first region 3 a to the adhesive layer 5 (eg, 4.5 N / 25 mm) can be regarded as a value that reduces the adhesive strength before irradiation with active energy rays to such an extent that excellent pickup properties are exhibited.

[0048] The adhesive force (f2) of the second region 3b of the pressure-sensitive adhesive layer 3 to the adhesive layer 5 can be, for example, 8.0 to 11.5 N / 25mm. f2 can be 8.5 N / 25mm or greater, 9.0 N / 25mm or greater, or 9.5 N / 25mm or less, or 11.0 N / 25mm or less, 10.8 N / 25mm or less, or 10.5 N / 25mm or less.

[0049] In this embodiment, f1, f2 and (f2-f1) can be adjusted, for example, by adjusting the content of chain-polymerizable functional groups in the (meth)acrylic resin (the content of the functional group-introducing compound), the content of the cross-linking agent in the pressure-sensitive adhesive layer, the irradiation amount of active energy rays, or by adding other resins (acrylic monomers or oligomers, urethane monomers or oligomers, etc.) or adhesives (tackifiers, etc.).

[0050] The adhesive strength of the second region 3b of the pressure-sensitive adhesive layer 3 to the stainless steel substrate can be 0.2 N / 25 mm or greater. This adhesive strength is the 90° peel strength measured at a temperature of 23°C, a peel angle of 90°, and a peel speed of 50 mm / min. Since this adhesive strength is 0.2 N / 25 mm or greater, loop peeling during crystal cutting can be sufficiently suppressed. The adhesive strength of the second region 3b of the pressure-sensitive adhesive layer 3 to the stainless steel substrate can be 0.25 N / 25 mm or greater, or 0.3 N / 25 mm or greater, and can be 2.0 N / 25 mm or less, 1.0 N / 25 mm or less, 0.8 N / 25 mm or less, or 0.6 N / 25 mm or less.

[0051] The pressure-sensitive adhesive layer before irradiation with active energy rays is composed, for example, of an active energy ray-curable pressure-sensitive adhesive comprising a (meth)acrylic resin, a photopolymerization initiator, and a crosslinking agent. The second region 3b not irradiated with active energy rays may have the same composition as the pressure-sensitive adhesive layer before irradiation with active energy rays. The components of the active energy ray-curable pressure-sensitive adhesive are described in detail below.

[0052] [(Meth)acrylic resin]

[0053] The active energy ray-curable pressure-sensitive adhesive may contain a (meth) acrylic resin having a chain-polymerizable functional group. In the case of containing such a (meth) acrylic resin, the functional group may be at least one selected from an acryloyl group and a methacryloyl group. The content of the functional group in the (meth) acrylic resin may be 0.1 to 1.2 mmol / g. The content of the functional group in the (meth) acrylic resin may be 0.2 mmol / g or more or 0.3 mmol / g or less, or 1.0 mmol / g or less, 0.8 mmol / g or less, 0.7 mmol / g or less, 0.6 mmol / g or less or 0.5 mmol / g or less. Since the content of the functional group is 0.1 mmol / g or more, it tends to be easy to form a region (first region 3a) in which the adhesive strength is appropriately reduced due to irradiation with active energy rays. On the other hand, since the content of the functional group is 1.2 mmol / g or less, it tends to be easy to achieve excellent pickup properties.

[0054] (Meth) acrylic resin can be synthesized and obtained by known methods. As a synthetic method, for example, solution polymerization, suspension polymerization, emulsion polymerization, block polymerization, precipitation polymerization, gas phase polymerization, plasma polymerization, supercritical polymerization can be enumerated. And, as the kind of polymerization reaction, except free radical polymerization, cationic polymerization, anionic polymerization, living radical polymerization, living cationic polymerization, living anionic polymerization, coordination polymerization, immortal polymerization etc., methods such as ATRP (atom transfer radical polymerization) and RAFT (reversible addition-fragmentation chain transfer polymerization) can also be enumerated. Wherein, about using solution polymerization to synthesize by free radical polymerization, except good economy, high reaction rate, easy polymerization control etc., also have the advantages such as being able to directly use the resin solution obtained by polymerization to allocate.

[0055] Here, a method for synthesizing a (meth)acrylic resin will be described in detail, taking as an example a method for obtaining a (meth)acrylic resin by radical polymerization using a solution polymerization method.

[0056] The monomer used in the synthesis of the (meth)acrylic resin is not particularly limited as long as it is a monomer having one (meth)acryloyl group in one molecule. Specific examples thereof include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylcetyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, lauryl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, and 1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1,1-dimethyl-1 Aliphatic (meth)acrylates such as hexadecyl (meth)acrylate, stearyl (meth)acrylate, behenyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, mono(2-(meth)acryloyloxyethyl) succinate; cyclopentyl (meth)acrylate, cyclohexyl (meth)acrylate, cyclopentyl (meth)acrylate, dicyclopentyl (meth)acrylate, dicyclopentenyl (meth)acrylate, isobornyl (meth)acrylate, mono(2-(meth)acryloyloxyethyl) tetrahydrophthalate, Alicyclic (meth)acrylates such as mono(2-(meth)acryloyloxyethyl)hexahydrophthalate; benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthyloxyethyl (meth)acrylate, 2-naphthyloxyethyl (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, Aromatic (meth)acrylates such as 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthyloxy)propyl (meth)acrylate, and 2-hydroxy-3-(2-naphthyloxy)propyl (meth)acrylate; heterocyclic (meth)acrylates such as 2-tetrahydrofurfuryl (meth)acrylate, N-(meth)acryloyloxyethylhexahydrophthalimide, and 2-(meth)acryloyloxyethyl-N-carbazole; caprolactone-modified versions thereof, ω-carboxy-polycaprolactone mono(meth)acrylate, glycidyl (meth)acrylate, and (meth)acrylate. α -Ethyl glycidyl ester, (meth)acrylic acid α-propyl glycidyl ester, (meth) acrylic acid α -butyl glycidyl (meth)acrylate, 2-methyl glycidyl (meth)acrylate, 2-ethyl glycidyl (meth)acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, (meth)acrylate α Compounds having an ethylenically unsaturated group and an epoxy group, such as ethyl-6,7-epoxyheptyl, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether; (2-ethyl-2-oxetanyl)methyl (meth)acrylate, (2-methyl-2-oxetanyl)methyl (meth)acrylate, 2-(2-ethyl-2-oxetanyl)ethyl (meth)acrylate, 2-(2-methyl-2-oxetanyl)ethyl (meth)acrylate, Compounds having an ethylenically unsaturated group and an oxetanyl group, such as 3-(2-ethyl-2-oxetanyl)propyl (meth)acrylate and 3-(2-methyl-2-oxetanyl)propyl (meth)acrylate; compounds having an ethylenically unsaturated group and an isocyanate group, such as 2-(meth)acryloyloxyethyl isocyanate; and compounds having an ethylenically unsaturated group and a hydroxyl group, such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl (meth)acrylate. The target (meth)acrylic resin can be obtained by appropriately combining these.

[0057] The (meth)acrylic resin may have at least one functional group selected from the group consisting of a hydroxyl group, a glycidyl group (epoxy group), and an amino group, serving as a reaction site with the functional group-introducing compound or crosslinking agent described below. Examples of monomers used to synthesize the (meth)acrylic resin having a hydroxyl group include compounds having an ethylenically unsaturated group and a hydroxyl group, such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, and 2-hydroxybutyl (meth)acrylate. These may be used alone or in combination of two or more.

[0058] Examples of monomers for synthesizing the (meth)acrylic resin having a glycidyl group include glycidyl (meth)acrylate, (meth)acrylate, α -Ethyl glycidyl ester, (meth)acrylic acid α -propyl glycidyl ester, (meth) acrylic acid α-butyl glycidyl (meth)acrylate, 2-methyl glycidyl (meth)acrylate, 2-ethyl glycidyl (meth)acrylate, 2-propyl glycidyl (meth)acrylate, 3,4-epoxybutyl (meth)acrylate, 3,4-epoxyheptyl (meth)acrylate, (meth)acrylate α Compounds having an ethylenically unsaturated group and an epoxy group, such as ethyl-6,7-epoxyheptyl ester, 3,4-epoxycyclohexylmethyl (meth)acrylate, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, and p-vinylbenzyl glycidyl ether. These may be used alone or in combination of two or more.

[0059] The (meth)acrylic resin synthesized from these monomers contains chain-polymerizable functional groups. Examples of chain-polymerizable functional groups include at least one selected from acryloyl and methacryloyl groups. Chain-polymerizable functional groups can be introduced into the (meth)acrylic resin by reacting the (meth)acrylic resin synthesized as described above, which contains at least one functional group selected from, for example, a hydroxyl group, a glycidyl group (epoxy group), or an amino group, with the following compound (functional group-introducing compound). Specific examples of functional group-introducing compounds include 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1-(bisacryloyloxymethyl)ethyl isocyanate; acryloyl monoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth)acrylate or 4-hydroxybutylethyl (meth)acrylate; and acryloyl monoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate. These compounds may be used alone or in combination of two or more. Among these, the functional group-introducing compound may be 2-methacryloyloxyethyl isocyanate.

[0060] [Photopolymerization initiator]

[0061] The photopolymerization initiator is not particularly limited as long as it generates chain-polymerizable active species upon exposure to active energy rays. The active energy rays may be at least one selected from ultraviolet light, electron beams, and visible light, and may be ultraviolet light. Examples of photopolymerization initiators include photoradical polymerization initiators. Here, the chain-polymerizable active species refers to a species that initiates a polymerization reaction by reacting with a chain-polymerizable functional group.

[0062] Examples of the photoradical polymerization initiator include benzoin ketal such as 2,2-dimethoxy-1,2-diphenylethane-1-one; α-hydroxyketones such as 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane-1-one; 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butane-1-one, and 1,2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropane-1-one. α-aminoketones; oxime esters such as 1-[4-(phenylthio)phenyl]-1,2-octanedione-2-(benzoyl)oxime; phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-di(methoxyphenyl)imidazole dimer, and 2-(o-fluorophenyl)-4,5-diphenylimidazole 2,4,5-triaryl imidazole dimers such as 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer and 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer; benzophenone compounds such as benzophenone, N,N,N',N'-tetramethyl-4,4'-diaminobenzophenone, N,N,N',N'-tetraethyl-4,4'-diaminobenzophenone and 4-methoxy-4'-dimethylaminobenzophenone; 2-ethylanthraquinone, phenanthrenequinone, 2-tert-butylanthraquinone, octamethylanthraquinone and 1,2-benzanthraquinone Quinone compounds such as 2,3-benzanthraquinone, 2-phenylanthraquinone, 2,3-diphenylanthraquinone, 1-chloroanthraquinone, 2-methylanthraquinone, 1,4-naphthoquinone, 9,10-phenanthrenequinone, 2-methyl-1,4-naphthoquinone, and 2,3-dimethylanthraquinone; benzoin ethers such as benzoin methyl ether, benzoin ethyl ether, and benzoin phenyl ether; benzoin compounds such as benzoin, methyl benzoin, and ethyl benzoin; benzyl compounds such as benzyl dimethyl ketal; acridine compounds such as 9-phenylacridine and 1,7-bis(9,9'-acridylheptane); N-phenylglycine, coumarin, etc.

[0063] The amount of photopolymerization initiator in the active energy ray-curable pressure-sensitive adhesive can be 0.1 to 30 parts by mass, 0.3 to 10 parts by mass, or 0.5 to 5 parts by mass per 100 parts by mass of the (meth)acrylic resin. If the amount of photopolymerization initiator is 0.1 parts by mass or greater, the pressure-sensitive adhesive layer is sufficiently cured after irradiation with active energy rays, making pickup failure less likely. If the amount of photopolymerization initiator is 30 parts by mass or less, contamination of the adhesive layer (transfer of the photopolymerization initiator to the adhesive layer) can be prevented.

[0064] [Crosslinking agent]

[0065] Crosslinking agents are used, for example, to control the elastic modulus and / or adhesiveness of the pressure-sensitive adhesive layer. Any crosslinking agent may be a compound having two or more functional groups in one molecule that can react with at least one functional group selected from the group consisting of a hydroxyl group, a glycidyl group, and an amino group, etc., contained in the (meth)acrylic resin. Examples of the bond formed by the reaction between the crosslinking agent and the (meth)acrylic resin include an ester bond, an ether bond, an amide bond, an amide bond, a urethane bond, and a urea bond.

[0066] In this embodiment, the crosslinking agent may be, for example, a polyfunctional isocyanate having two or more isocyanate groups in one molecule. If such a polyfunctional isocyanate is used, it can readily react with the hydroxyl group, glycidyl group, amino group, etc. of the (meth)acrylic resin to form a strong crosslinked structure.

[0067] Examples of the polyfunctional isocyanate having two or more isocyanate groups in one molecule include isocyanate compounds such as 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylyl diisocyanate, 1,4-xylyl diisocyanate, diphenylmethane-4,4'-diisocyanate, diphenylmethane-2,4'-diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, dicyclohexylmethane-4,4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, and lysine isocyanate.

[0068] The crosslinking agent may be a reaction product (isocyanate group-containing oligomer) of a polyfunctional isocyanate and a polyol having two or more hydroxyl groups in one molecule. Examples of the polyol having two or more hydroxyl groups in one molecule include ethylene glycol, propylene glycol, butanediol, 1,6-hexanediol, 1,8-octanediol, 1,9-nonanediol, 1,10-decanediol, 1,11-undecanediol, 1,12-dodecanediol, glycerol, trimethylolpropane, pentaerythritol, dipentaerythritol, 1,4-cyclohexanediol, and 1,3-cyclohexanediol.

[0069] Among these, the crosslinking agent may be a reaction product (isocyanate group-containing oligomer) of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyol having three or more hydroxyl groups in one molecule. By using such an isocyanate group-containing oligomer as a crosslinking agent, a dense crosslinked structure of the pressure-sensitive adhesive layer 3 is formed, thereby tending to sufficiently suppress adhesion of the pressure-sensitive adhesive to the adhesive layer 5 during the pickup process.

[0070] The content of the crosslinking agent in the active energy ray-curable pressure-sensitive adhesive can be appropriately set according to the cohesive force, elongation at break, adhesion to the adhesive layer, etc. required for the pressure-sensitive adhesive layer. Specifically, the content of the crosslinking agent relative to 100 parts by mass of the (meth) acrylic resin can be, for example, 3 to 30 parts by mass, 4 to 15 parts by mass, or 7 to 10 parts by mass. By setting the content of the crosslinking agent to the above range, it is possible to well balance the properties required for the pressure-sensitive adhesive layer in the die cutting process and the properties required for the pressure-sensitive adhesive layer in the die bonding process, and also to achieve excellent pickup properties.

[0071] If the cross-linking agent content is 3 parts by mass or greater per 100 parts by mass of the (meth)acrylic resin, the cross-linked structure is less likely to be insufficiently formed, and the interfacial adhesion with the adhesive layer is sufficiently reduced during the pickup process, making it less likely that problems will occur during pickup. On the other hand, if the cross-linking agent content is 30 parts by mass or less per 100 parts by mass of the (meth)acrylic resin, the pressure-sensitive adhesive layer is less likely to become too hard, making it less likely that the chip will be peeled off during the expansion process.

[0072] The content of the crosslinking agent relative to the total mass of the active energy ray-curable pressure-sensitive adhesive can be, for example, 0.1 to 15 mass %, 3 to 15 mass %, or 5 to 15 mass %. When the content of the crosslinking agent is 0.1 mass % or more, it is easy to form a region (first region 3a) in which the adhesive strength is appropriately reduced by irradiation with active energy rays. On the other hand, when the content of the crosslinking agent is 15 mass % or less, it is easy to achieve excellent pickup properties.

[0073] The thickness of the pressure-sensitive adhesive layer 3 can be appropriately set according to the conditions of the expansion process (temperature, tension, etc.), and can be, for example, 1 to 200 μm, 5 to 50 μm, or 10 to 20 μm. If the thickness of the pressure-sensitive adhesive layer 3 is 1 μm or more, the adhesiveness is less likely to become insufficient. If it is 200 μm or less, the incision width tends to become wider during expansion (stress is not relieved when the pin is pushed up), and the pickup is less likely to become insufficient.

[0074] The pressure-sensitive adhesive layer 3 is formed on the substrate layer 1. As a method for forming the pressure-sensitive adhesive layer 3, a known method can be adopted. For example, a laminate of the substrate layer 1 and the pressure-sensitive adhesive layer 3 can be formed by a two-layer coextrusion method, or a varnish of an active energy ray-curable pressure-sensitive adhesive (varnish for forming a pressure-sensitive adhesive layer) can be prepared and applied to the surface of the substrate layer 1, or the pressure-sensitive adhesive layer 3 can be formed on a film that has been subjected to a release treatment and transferred to the substrate layer 1.

[0075] The varnish of the active energy ray-curable pressure-sensitive adhesive (varnish for forming the pressure-sensitive adhesive layer) is an organic solvent that can dissolve (meth) acrylic resin, photopolymerization initiator and crosslinking agent, and can be volatilized by heating. Specific examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-isopropyl toluene; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; alcohols such as methanol, ethanol, isopropanol, butanol, ethylene glycol, and propylene glycol; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, and ethylene glycol. Polyol alkyl ethers such as diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether; polyol alkyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, and diethylene glycol monoethyl ether acetate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These organic solvents may be used alone or in combination of two or more.

[0076] Among these, from the viewpoints of solubility and boiling point, the organic solvent may be, for example, at least one selected from the group consisting of toluene, methanol, ethanol, isopropyl alcohol, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, methyl acetate, ethyl acetate, butyl acetate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether acetate, propylene glycol monomethyl ether acetate, and N,N-dimethylacetamide. The solid content concentration of the varnish is generally 10 to 60% by mass.

[0077] (Base material layer)

[0078] The base material 1 can be made of a known polymer sheet or film, and is not particularly limited as long as the expansion step can be performed under low temperature conditions. Specific examples of the substrate layer 1 include crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, polymethylpentene and other polyolefins, ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylate (random, alternating) copolymers, ethylene-butene copolymers, ethylene-hexene copolymers, polyurethane, polyethylene terephthalate, polyethylene naphthalate and other polyesters, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylene sulfide, aromatic polyamide (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin or a mixture thereof mixed with a plasticizer, or a cured product cross-linked by electron beam irradiation.

[0079] Base material layer 1 has at least a resin selected from the group consisting of polyethylene, polypropylene, polyethylene-polypropylene random copolymer and polyethylene-polypropylene block copolymer as the surface of main component, can be the layer that this surface contacts with pressure-sensitive adhesive layer 3.From viewpoints such as waste recycling after characteristics such as Young's modulus, stress relaxation, fusing point, price, the use, these resins also can become good base materials. Base material layer 1 can be a monolayer, as required, can have the multilayer structure that is formed by the layer stacking of different materials.From the viewpoint of the adhesion of control and pressure-sensitive adhesive layer 3, base material layer 1 can be implemented to its surface matte treatment, corona treatment and other surface roughening processes.

[0080] (Adhesive layer)

[0081] Adhesive compositions that constitute known die-bonding films can be used in adhesive layer 5. Specifically, the adhesive composition constituting adhesive layer 5 can include a (meth)acrylic acid copolymer containing reactive groups, a curing accelerator, and a filler. Adhesive layer 5 containing these components tends to exhibit the following characteristics: excellent chip-to-substrate and chip-to-chip adhesion, as well as electrode and wire embedding properties. Furthermore, during the die-bonding process, bonding can be performed at low temperatures, excellent curing can be achieved in a short time, and excellent reliability after molding with a sealant is achieved.

[0082] The (meth)acrylic acid copolymer containing a reactive group may be, for example, a (meth)acrylic acid copolymer containing an epoxy group. The (meth)acrylic acid copolymer containing an epoxy group may be a copolymer obtained by using 0.5 to 6% by mass of glycidyl (meth)acrylate as a raw material relative to the obtained copolymer. If the content of glycidyl (meth)acrylate is 0.5% by mass or more, high adhesion is easily obtained. On the other hand, by setting it to 6% by mass or less, gelation tends to be suppressed. The monomer constituting the remainder of the (meth)acrylic acid copolymer containing a reactive group may be, for example, an alkyl (meth)acrylate having an alkyl group having 1 to 8 carbon atoms, such as methyl (meth)acrylate, styrene, acrylonitrile, etc. Among these, the monomer constituting the remainder of the (meth)acrylic acid copolymer containing a reactive group may be ethyl (meth)acrylate and / or butyl (meth)acrylate. The mixing ratio can be adjusted in consideration of the Tg of the (meth)acrylic acid copolymer containing a reactive group. If the Tg is -10°C or higher, the viscosity of the adhesive layer 5 in the B-stage state tends to be suppressed from becoming excessively high, and the workability tends to be excellent. In addition, the glass transition point (Tg) of the epoxy group-containing (meth)acrylic copolymer can be, for example, 30°C or lower. The polymerization method is not particularly limited, and examples thereof include bead polymerization and solution polymerization. As a commercially available epoxy group-containing (meth)acrylic copolymer, for example, HTR-860P-3 (trade name, manufactured by Nagase ChemteX Corporation) can be mentioned.

[0083] From the perspective of adhesion and heat resistance, the weight-average molecular weight of the epoxy-containing (meth)acrylic copolymer can be 100,000 or more, 300,000 to 3,000,000, or 500,000 to 2,000,000. A weight-average molecular weight of 3,000,000 or less can suppress a decrease in the fillability between the chip and the substrate supporting the chip. The weight-average molecular weight is a polystyrene-converted value obtained by gel permeation chromatography (GPC) using a calibration curve of standard polystyrene.

[0084] Examples of curing accelerators include tertiary amines, imidazoles, and quaternary ammonium salts. Specific examples of curing accelerators include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-phenylimidazolium trimellitate. These may be used alone or in combination of two or more.

[0085] The filler may be an inorganic filler. Specific examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silica, and amorphous silica. These may be used alone or in combination of two or more.

[0086] The adhesive composition can also include epoxy resin and epoxy resin curing agent. As epoxy resin, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, alicyclic epoxy resin, aliphatic chain epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolac type epoxy resin, diglycidyl ethers of biphenol, diglycidyl ethers of naphthalene diol, diglycidyl ethers of phenols, diglycidyl ethers of alcohols and alkyl substituted bodies, halides, hydrides and other difunctional epoxy resins, novolac type epoxy resins etc. can be mentioned. In addition, other commonly known epoxy resins such as multifunctional epoxy resins and epoxy resins containing heterocycles can be applied. These can be used alone or in combination of two or more. In addition, within the scope of not damaging the characteristics, components other than epoxy resin can be included as impurities.

[0087] Examples of epoxy resin curing agents include phenolic resins obtained by reacting a phenolic compound with a xylylene compound as a divalent linking group in the absence of a catalyst or in the presence of an acid catalyst. Examples of phenolic compounds used to produce phenolic resins include phenol, o-cresol, m-cresol, p-cresol, o-ethylphenol, p-ethylphenol, o-n-propylphenol, m-n-propylphenol, p-n-propylphenol, o-isopropylphenol, m-isopropylphenol, p-isopropylphenol, o-n-butylphenol, m-n-butylphenol, p-n-butylphenol, o-isobutylphenol, m-isobutylphenol, p-isobutylphenol, octylphenol, nonylphenol, 2,4-xylenol, 2,6-xylenol, 3,5-xylenol, 2,4,6-trimethylphenol, resorcinol, catechol, hydroquinone, 4-methoxyphenol, o-phenylphenol, m-phenylphenol, p-phenylphenol, p-cyclohexylphenol, o-allylphenol, p-allylphenol, o-benzylphenol, p-benzylphenol, o-chlorophenol, p-chlorophenol, o-bromophenol, p-bromophenol, o-iodophenol, p-iodophenol, o-fluorophenol, m-fluorophenol, p-fluorophenol, etc. These phenol compounds can be used alone or in combination of two or more. As the divalent linking group for the manufacture of the phenol resin, i.e., the xylylene compound, the following xylylene dihalides, xylylene diglycol and derivatives thereof can be used. That is, specific examples of xylylene compounds include α,α'-dichloro-p-xylene, α,α'-dichloro-m-xylene, α,α'-dichloro-o-xylene, α,α'-dibromo-p-xylene, α,α'-dibromo-m-xylene, α,α'-dibromo-o-xylene, α,α'-diiodo-p-xylene, α,α'-diiodo-m-xylene, α,α'-diiodo-o-xylene, α,α'-dihydroxy-p-xylene, α,α'-dihydroxy-m-xylene, α,α'-dihydroxy-o-xylene, α,α'-dimethoxy-p-xylene, α,α'-dimethoxy-m-xylene, α,α'-dimethoxy-o-xylene, α,α'-diethoxy-p-xylene, α,α'-diethoxy-m-xylene, α ,α'-diethoxy-o-xylene,α,α'-di-n-propoxy-p-xylene,α,α'-di-n-propoxy-m-xylene,α,α'-di-n-propoxy-o-xylene,α,α'-di-isopropoxy-p-xylene,α,α'-di-isopropoxy-m-xylene,α,α'-di-isopropoxy-o-xylene,α,α'-di-n-butoxy-p-xylene,α,α'-di-n-butoxy-m-xylene,α,α'-di-n-butoxy-o-xylene,α,α'-di-isobutoxy-p-xylene,α,α'-di-isobutoxy-m-xylene,α,α'-di-isobutoxy-o-xylene,α,α'-di-tert-butoxy-p-xylene,α,α'-di-tert-butoxy-m-xylene,α,α'-di-tert-butoxy-o-xylene, etc. These may be used alone or in combination of two or more.

[0088] When reacting a phenol compound with a xylylene compound, an acidic catalyst such as a mineral acid such as hydrochloric acid, sulfuric acid, phosphoric acid, or polyphosphoric acid; an organic carboxylic acid such as dimethylsulfuric acid, diethylsulfuric acid, p-toluenesulfonic acid, methanesulfonic acid, or ethanesulfonic acid; a superacid such as trifluoromethanesulfonic acid; a strongly acidic ion exchange resin such as an alkanesulfonic acid type ion exchange resin; a superacidic ion exchange resin such as a perfluoroalkanesulfonic acid type ion exchange resin (trade names: Nafion, manufactured by DuPont, "Nafion" is a registered trademark); natural and synthetic zeolites; or an activated clay (acid clay) type is used to react at 50 to 250° C. until the xylylene compound as a raw material is substantially eliminated and the reaction composition becomes constant, thereby obtaining a phenolic resin. The reaction time can be appropriately set depending on the raw materials and the reaction temperature, for example, from 1 to 15 hours. The reaction composition can be determined while monitoring the reaction composition using GPC (gel permeation chromatography) or the like.

[0089] The thickness of the adhesive layer 5 may be, for example, 1 to 300 μm, 5 to 150 μm, or 10 to 100 μm. A thickness of 1 μm or greater improves adhesion, while a thickness of 300 μm or less improves splitting and picking properties during expansion.

[0090] <Method for Manufacturing Dicing and Die-Bonding Integrated Film>

[0091] The method for manufacturing the film 10 sequentially comprises: a step of forming a laminate on the surface of a substrate layer 1, the laminate comprising a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive whose adhesive strength decreases upon exposure to active energy rays, and an adhesive layer 5 formed on the surface of the pressure-sensitive adhesive layer; and a step of irradiating a region of the pressure-sensitive adhesive layer included in the laminate with active energy rays, which will become the first region 3a. The irradiation dose of the active energy rays on the region to become the first region 3a is, for example, 10 to 1000 mJ / cm 2 , 100~700mJ / cm 2 or 200-500 mJ / cm 2 This production method is a method of first preparing a laminate of a pressure-sensitive adhesive layer and the adhesive layer 5, and then irradiating a specific region of the pressure-sensitive adhesive layer with active energy rays.

[0092] <Semiconductor device and manufacturing method thereof>

[0093] Figure 4This is a cross-sectional view schematically illustrating a semiconductor device according to this embodiment. The semiconductor device 100 shown in this figure includes a substrate 70; four chips S1, S2, S3, and S4 stacked on the surface of the substrate 70; wires W1, W2, W3, and W4 electrically connecting electrodes (not shown) on the surface of the substrate 70 to the four chips S1, S2, S3, and S4; and a sealing layer 50 that seals these components.

[0094] The substrate 70 is, for example, an organic substrate or a metal substrate such as a lead frame. From the perspective of suppressing warping of the semiconductor device 100 , the thickness of the substrate 70 may be, for example, 70 to 140 μm or 80 to 100 μm.

[0095] The four chips S1, S2, S3, and S4 are stacked via a cured product 5C of an adhesive sheet 5P. The shape of the chips S1, S2, S3, and S4 in a plan view is, for example, square or rectangular. The area of ​​the chips S1, S2, S3, and S4 is 0.1 to 9 mm. 2 , 0.1~4mm 2 or 0.1~2mm 2 The length of a side of chips S1, S2, S3, and S4 can be, for example, 0.1 to 3 mm, 0.1 to 2 mm, or 0.1 to 1 mm. The thickness of chips S1, S2, S3, and S4 can be, for example, 10 to 170 μm or 25 to 100 μm. Furthermore, the length of a side of the four chips S1, S2, S3, and S4 can be the same or different, and the same applies to their thickness.

[0096] The method for manufacturing the semiconductor device 100 comprises: a step of preparing the film 10; a step of attaching a wafer W to the adhesive layer 5 of the film 10 and attaching a dicing ring DR to the second surface F2 of the pressure-sensitive adhesive layer 3; a step of singulating the wafer W into a plurality of chips S (dicing step); picking up the DAF 8 (a laminate of the chip S1 and the adhesive sheet 5P, see FIG. 1 ) from the first region 3a of the pressure-sensitive adhesive layer 3; and a step of attaching the wafer W to the adhesive layer 5 of the film 10 and attaching the dicing ring DR to the second surface F2 of the pressure-sensitive adhesive layer 3. Figure 5 and a step of mounting the chip S1 on the substrate 70 via the adhesive sheet 5P.

[0097] refer to Figure 5 (a) Figure 5 (b) Figure 5 (c) and Figure 5 (d) of the present invention will now describe an example of a method for producing DAF8. First, the above-mentioned film 10 is prepared. Figure 5 (a) and Figure 5 As shown in FIG. 5 ( b ), the film 10 is attached so that the adhesive layer 5 is in contact with one surface of the wafer W. Then, the dicing ring DR is attached to the second surface F2 of the pressure-sensitive adhesive layer 3 .

[0098] The wafer W, the adhesive layer 5 and the pressure-sensitive adhesive layer 3 are cut into pieces. Figure 5 As shown in (c), the wafer W is singulated to form chips S. The adhesive layer 5 is also singulated to form adhesive sheets 5P. As a slicing method, a slicing blade or a laser can be used. Alternatively, the wafer W can be ground to form a film before slicing.

[0099] After the crystal cutting, the pressure-sensitive adhesive layer 3 is not irradiated with active energy rays, such as Figure 5 As shown in (d), at room temperature or under cooling conditions, the chips S are separated from each other by expanding the base material layer 1, and the adhesive sheet 5P is peeled off from the pressure-sensitive adhesive layer 3 by pushing up with the pin 42, and the DAF 8 is sucked and picked up with the suction chuck 44.

[0100] refer to Figure 6 、 Figure 7 and Figure 8 , the manufacturing method of the semiconductor device 100 is described in detail. First, Figure 6 As shown, the first-stage chip S1 (chip S) is press-bonded to a predetermined position on the substrate 70 via the adhesive sheet 5P. Next, the adhesive sheet 5P is cured by heating. This cures the adhesive sheet 5P into a cured product 5C. To reduce voids, curing the adhesive sheet 5P can be performed under pressure.

[0101] The second-stage chip S2 is mounted on the surface of the chip S1 in the same manner as the chip S1 is mounted on the substrate 70. Furthermore, the third-stage and fourth-stage chips S3 and S4 are mounted to form a substrate. Figure 7 After the chips S1, S2, S3, S4 and the substrate 70 are electrically connected by wires W1, W2, W3, W4 (refer to Figure 8 ), the semiconductor element and the wire are sealed by the sealing layer 50, thereby completing Figure 4 A semiconductor device 100 is shown.

[0102] While the embodiments of the present invention have been described in detail above, the present invention is not limited to the aforementioned embodiments. For example, in the aforementioned embodiments, a film 10 is illustrated as including a substrate layer 1, a pressure-sensitive adhesive layer 3, and an adhesive layer 5 in this order. However, an embodiment without the adhesive layer 5 is also possible. Furthermore, the film 10 may further include a cover film (not shown) that covers the adhesive layer 5.

[0103] Example

[0104] Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples. In addition, unless otherwise specified, all chemicals used were reagents.

[0105] <Production Example 1>

[0106] [Synthesis of acrylic resin (A-1)]

[0107] The following ingredients were added to a 2000 mL flask equipped with a three-in-one motor, a stirring blade, and a nitrogen inlet tube.

[0108] Ethyl acetate (solvent): 635 parts by mass

[0109] 2-Ethylhexyl acrylate: 395 parts by mass

[0110] 2-Hydroxyethyl acrylate: 100 parts by mass

[0111] Methacrylic acid: 5 parts by mass

[0112] Azobisisobutyronitrile: 0.08 parts by mass

[0113] After stirring the contents until fully homogenized, bubbling was performed at a flow rate of 500 mL / min for 60 minutes to deaerate the dissolved oxygen in the system. The temperature was raised to 78°C over 1 hour, and polymerization was continued for 6 hours. The reaction solution was then transferred to a 2000 mL autoclave equipped with a three-in-one motor, stirring blades, and a nitrogen inlet tube. The autoclave was heated at 120°C and 0.28 MPa for 4.5 hours, and then cooled to room temperature (25°C, the same applies hereinafter).

[0114] Next, 490 parts by mass of ethyl acetate was added and stirred to dilute the contents. To this, 0.10 parts by mass of dioctyltin dilaurate was added as a urethanization catalyst, followed by 48.6 parts by mass of 2-methacryloyloxyethyl isocyanate (Karenz MOI (trade name) manufactured by SHOWA DENKO KK) and reaction at 70°C for 6 hours, followed by cooling to room temperature. Ethyl acetate was then further added to adjust the nonvolatile content of the acrylic resin solution to 35% by mass, thereby obtaining a solution containing the acrylic resin (A-1) having a chain-polymerizable functional group of Production Example 1.

[0115] The solution containing the acrylic resin (A-1) obtained above was vacuum-dried overnight at 60°C. The resulting solid component was subjected to elemental analysis using a fully automatic elemental analyzer (manufactured by Elementar Analysensysteme GmbH, trade name: vario EL). The content of functional groups derived from the introduced 2-methacryloyloxyethyl isocyanate, calculated from the nitrogen content, was 0.50 mmol / g.

[0116] The following apparatus was used to determine the polystyrene-equivalent weight average molecular weight of the acrylic resin (A-1). Specifically, SD-8022 / DP-8020 / RI-8020 manufactured by Tosoh Corporation was used, and Gelpack GL-A150-S / GL-A160-S manufactured by Hitachi Chemical Co., Ltd. was used as a column, and tetrahydrofuran was used as an eluent to perform GPC. The result showed that the polystyrene-equivalent weight average molecular weight was 800,000. The hydroxyl value and acid value, measured according to the method described in JIS K0070, were 56.1 mgKOH / g and 6.5 mgKOH / g, respectively. These results are summarized in Table 1.

[0117] <Production Example 2>

[0118] [Synthesis of acrylic resin (A-2)]

[0119] A solution containing acrylic resin (A-2) of Production Example 2 was obtained by the same method as in Production Example 1, except that the raw material monomer composition shown in Production Example 1 in Table 1 was changed to the raw material monomer composition shown in Production Example 2 in Table 1. The measurement results of the properties of acrylic resin (A-2) of Production Example 2 are shown in Table 1.

[0120] <Production Example 3>

[0121] [Synthesis of acrylic resin (A-3)]

[0122] A solution containing acrylic resin (A-3) of Production Example 3 was obtained by the same method as in Production Example 1, except that the raw material monomer composition shown in Production Example 1 in Table 1 was changed to the raw material monomer composition shown in Production Example 3 in Table 1. The measurement results of the properties of acrylic resin (A-3) of Production Example 3 are shown in Table 1.

[0123] [Table 1]

[0124]

[0125] <Example 1>

[0126] [Production of Die-cut Film (Pressure-Sensitive Adhesive Layer)]

[0127] An active energy ray-curable pressure-sensitive adhesive varnish (pressure-sensitive adhesive layer-forming varnish) was prepared by mixing the following components (see Table 2): The amount of ethyl acetate (solvent) was adjusted so that the total solid content of the varnish would be 25% by mass.

[0128] Solution containing acrylic resin (A-1) of Production Example 1: 100 parts by mass (solid content)

[0129] Photopolymerization initiator (B-1) (1-hydroxycyclohexyl phenyl ketone (manufactured by Ciba Japan KK, Irgacure 184, "Irgacure" is a registered trademark): 1.0 part by mass

[0130] Crosslinking agent (C-1) (polyfunctional isocyanate (reaction product of toluene diisocyanate and trimethylolpropane), manufactured by Nippon Polyurethane Industry Co., Ltd., CORONATE L, solid content: 75%): 8.0 parts by mass (solid content)

[0131] ·Ethyl acetate (solvent)

[0132] A polyethylene terephthalate film (450 mm wide, 500 mm long, 38 μm thick) with a release treatment applied to one surface was prepared. A varnish of an active energy ray-curable pressure-sensitive adhesive was applied to the release-treated surface using an applicator and then dried at 80°C for 5 minutes. This produced a laminate (cut film) consisting of the polyethylene terephthalate film and a 30 μm thick pressure-sensitive adhesive layer formed thereon.

[0133] A polyolefin film (450 mm wide, 500 mm long, 80 μm thick) with one surface corona-treated was prepared. The corona-treated surface and the pressure-sensitive adhesive layer of the laminate were bonded together at room temperature. The pressure-sensitive adhesive layer was then transferred to the polyolefin film (cover film) by pressing with a rubber roller. The film was then left at room temperature for three days to produce a cut-wafer film with a cover film.

[0134] [Preparation of Die Bonding Film (Adhesive Layer)]

[0135] The adhesive layer-forming varnish was prepared by mixing the following components: First, cyclohexanone (solvent) was added to a mixture containing the following components, stirred and mixed, and then kneaded for 90 minutes using a bead mill.

[0136] Epoxy resin (YDCN-700-10 (trade name), manufactured by NIPPON STEEL Chemical & Material Co., Ltd., cresol novolac-type epoxy resin, epoxy equivalent: 210, molecular weight: 1200, softening point: 80°C): 14 parts by mass

[0137] Phenolic resin (MILEX XLC-LL (trade name), manufactured by Mitsui Chemicals, Inc., phenolic resin, hydroxyl equivalent: 175, water absorption: 1.8%, heating weight loss at 350°C: 4%): 23 parts by mass

[0138] Silane coupling agent (NUC A-189 (trade name), manufactured by NUC CO., LTD., γ-mercaptopropyltrimethoxysilane): 0.2 parts by mass

[0139] Silane coupling agent (NUCA-1160 (trade name), manufactured by NUC CO., LTD., γ-ureidopropyltriethoxysilane): 0.1 parts by mass

[0140] Filler (SC2050-HLG (trade name), manufactured by Admatechs, silica, average particle size 0.500 μm): 32 parts by mass

[0141] The following components were further added to the mixture obtained above, followed by stirring, mixing, and vacuum degassing to obtain an adhesive layer-forming varnish (an adhesive composition varnish containing at least a (meth)acrylic copolymer containing a reactive group, a curing accelerator, and a filler).

[0142] Epoxy-containing acrylic copolymer (HTR-860P-3 (trade name), manufactured by Nagase ChemteX Corporation, weight average molecular weight: 800,000): 16 parts by mass

[0143] Curing accelerator (CUREZOL 2PZ-CN (trade name), manufactured by SHIKOKU CHEMICALS CORPORATION, 1-cyanoethyl-2-phenylimidazole, "CUREZOL" is a registered trademark) 0.1 parts by mass

[0144] A polyethylene terephthalate film (35 μm thick) with a release treatment applied to one surface was prepared. A varnish for forming an adhesive layer was applied to the release-treated surface using an applicator and then heated and dried at 140°C for 5 minutes. This produced a laminate (die-bonding film) consisting of the polyethylene terephthalate film (carrier film) and a 25 μm thick adhesive layer (in the B-stage state) formed thereon.

[0145] [Fabrication of Dicing and Die-bonding Integrated Film]

[0146] The die bonding film composed of an adhesive layer and a carrier film was cut into a circle with a diameter of 335 mm together with the carrier film. After the cut die bonding film from which the polyethylene terephthalate film was peeled was attached to the cut die bonding film at room temperature, it was left at room temperature for 1 day. Thereafter, the cut die bonding film was cut into a circle with a diameter of 370 mm to obtain a laminate. The area of ​​the laminate obtained in this way corresponding to the attachment position of the wafer in the adhesive layer (the first area of ​​the pressure-sensitive adhesive layer) was irradiated with ultraviolet rays as follows. That is, a pulsed xenon lamp was used at 70 W and 300 mJ / cm 2 Ultraviolet rays were locally irradiated at an irradiation dose of 100 nm. Furthermore, a light shield was used to irradiate the portion from the center of the film to an inner diameter of 318 mm. In this manner, multiple dicing and die-bonding integrated films of Example 1 were obtained for various evaluation tests described below.

[0147] <Example 2>

[0148] In addition to reducing the UV exposure from 300mJ / cm 2 Changed to 200mJ / cm 2 A plurality of dicing-die bonding integrated films of Example 2 were obtained in the same manner as in Example 1 except for the above.

[0149] <Example 3>

[0150] In addition to reducing the UV exposure from 300mJ / cm 2 Changed to 500mJ / cm 2 A plurality of dicing-die bonding integrated films of Example 3 were obtained in the same manner as in Example 1 except for the above.

[0151] <Example 4>

[0152] Except for changing the photopolymerization initiator (B-1) used in the preparation of the cut crystal film to the photopolymerization initiator (B-2) (2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propionyl)-benzyl]-phenyl}-2-methyl-propane-1-one, manufactured by Ciba Japan K.K., Irgacure127, "Irgacure" is a registered trademark)), multiple cut crystal bonding integrated films of Example 4 were obtained in the same manner as Example 1.

[0153] <Example 5>

[0154] A plurality of dicing die bonding integrated films of Example 5 were obtained in the same manner as in Example 3 except that the acrylic resin (A-1) used when producing the dicing film was changed to the acrylic resin (A-2).

[0155] <Comparative Example 1>

[0156] A plurality of dicing die bonding integrated films of Comparative Example 1 were obtained in the same manner as in Example 1 except that the acrylic resin (A-1) used when producing the dicing film was changed to the acrylic resin (A-3).

[0157] [Evaluation test]

[0158] (1) Determination of the adhesive strength (30° peel strength) of the pressure-sensitive adhesive layer to the adhesive layer

[0159] The bonding strength (f1) of the first region of the pressure-sensitive adhesive layer to the adhesive layer and the bonding strength (f2) of the second region of the pressure-sensitive adhesive layer to the adhesive layer were evaluated by measuring the 30° peel strength. In addition, f1 corresponds to the bonding strength of the first region of the pressure-sensitive adhesive layer to the adhesive layer after irradiation with ultraviolet rays, and f2 corresponds to the bonding strength of the region that becomes the first region of the pressure-sensitive adhesive layer to the adhesive layer before irradiation with ultraviolet rays. Therefore, f1 uses the cut die-bonded integrated film after irradiation with ultraviolet rays in [Preparation of Cut Die-bonded Integrated Film], and f2 uses the laminate before irradiation with ultraviolet rays to measure the bonding strength (30° peel strength). The measurement sample was obtained by preparing a cut die-bonded integrated film and a laminate, and cutting them into a width of 25 mm and a length of 100 mm, respectively. Using a tensile testing machine (Autograph "AGS-1000" manufactured by Shimadzu Corporation), the peel strength of the first region of the pressure-sensitive adhesive layer against the adhesive layer after ultraviolet irradiation and the peel strength of the region of the pressure-sensitive adhesive layer that became the first region against the adhesive layer before ultraviolet irradiation (the peel strength of the second region of the pressure-sensitive adhesive layer against the adhesive layer) were measured for each test sample. The measurement conditions were a peel angle of 30° and a peel speed of 60 mm / min. The samples were stored and the peel strength measurements were performed at a temperature of 23°C and a relative humidity of 40%. The results are shown in Table 2.

[0160] (2) Determination of the adhesive strength (90° peel strength) of the pressure-sensitive adhesive layer to the stainless steel substrate

[0161] The adhesive strength of the second region of the pressure-sensitive adhesive layer to the stainless steel substrate was evaluated by measuring the 90° peel strength. In addition, the adhesive strength corresponds to the adhesive strength of the pressure-sensitive adhesive layer to the stainless steel substrate before irradiation with ultraviolet rays. Therefore, the adhesive strength was measured using the laminate before irradiation with ultraviolet rays in [Production of Cutting Die Bonding Integrated Film] to measure the adhesive strength (90° peel strength). A laminate was prepared, cut into 25 mm in width and 100 mm in length, and the surface of the pressure-sensitive adhesive layer side was attached to a stainless steel substrate (SUS430BA), thereby obtaining a measurement sample. The peel strength of the pressure-sensitive adhesive layer to the stainless steel substrate was measured from the measurement sample using a tensile testing machine (manufactured by SHIMADZUCORPORATION, Autograph "AGS-1000"). The measurement conditions were set to a peel angle of 90° and a peel speed of 50 mm / min. The results are shown in Table 2.

[0162] (3) Determination of curing shrinkage of pressure-sensitive adhesive layer

[0163] Two polyethylene terephthalate films (450 mm wide, 500 mm long, 38 μm thick) were prepared, one of the surfaces of which had been subjected to a release treatment. An active energy ray-curable pressure-sensitive adhesive varnish was applied to the release-treated surface of one polyethylene terephthalate film using an applicator and then dried at 80°C for 5 minutes to form a pressure-sensitive adhesive layer. Next, the release-treated surface of the other polyethylene terephthalate film and the pressure-sensitive adhesive layer were bonded together at room temperature and pressed with a rubber roller to obtain a laminate consisting of the polyethylene terephthalate film, the 30 μm thick pressure-sensitive adhesive layer, and the polyethylene terephthalate film. Multiple such laminates were produced. Next, the polyethylene terephthalate film of the laminate was peeled on one side, and pressure-sensitive adhesive layers were laminated to prevent pores from entering. The pressure-sensitive adhesive layers were repeatedly laminated using another laminate until the thickness of the pressure-sensitive adhesive layer became about 1 mm, thereby obtaining a laminate consisting of two polyethylene terephthalate films and a pressure-sensitive adhesive layer with a thickness of about 1 mm sandwiched between them.

[0164] The obtained laminate is punched into The polyethylene terephthalate film was peeled off on both sides and placed on a glass slide to prevent the pores from entering. Then, a black aluminum foil was punched into a A sample was obtained by placing it on the upper surface of the pressure-sensitive adhesive layer on the side opposite to the slide glass. The resulting sample was irradiated with ultraviolet light under the same conditions as in [Fabrication of Die-Bonding Integrated Film]. The cure shrinkage rate was measured using a resin cure shrinkage measuring instrument (AcroEdge Corporation, Custron) based on the difference in thickness between the slide glass and aluminum foil before and after ultraviolet light irradiation. The results are shown in Table 2.

[0165] (4) Determination of chip edge peel strength

[0166] The edge peel strength was measured through the following procedure. Figure 9 (a) Figure 9 (b) and Figure 9 (c) is a cross-sectional view schematically showing the step of measuring the edge peel strength.

[0167] A step of attaching a 50 μm thick silicon wafer Ws to the adhesive layer 5 and attaching a wafer ring DR to the second surface F2 of the pressure-sensitive adhesive layer 3 (see Figure 9 (a)

[0168] · Step of singulating the silicon wafer Ws and the adhesive layer 5 into a plurality of chips Ta with adhesive sheets (a stack of chips Ts and adhesive sheets 5p) (see Figure 9 (b)

[0169] At a temperature of 23°C, the center of the chip Ta with an adhesive sheet was pushed in from the substrate layer 1 side at a speed of 60 mm / min (reference Figure 9 (c)) and measuring the edge peel strength when the edge of the chip Ta with the adhesive sheet is peeled off from the pressure-sensitive adhesive layer 3

[0170] First, the dicing die bonding integrated film was attached to a silicon wafer (diameter: 12 inches, thickness: 50 μm) and a dicing ring (reference Figure 9 (a)). After the silicon wafer and the dicing ring are attached, the elongation in the MD direction of the dicing die bonding integrated film is approximately 1.0 to 1.3%.

[0171] <Attachment Conditions>

[0172] Attachment device: DFM2800 (manufactured by DISCO Corporation)

[0173] Attachment temperature: 70℃

[0174] Attachment speed: 10mm / s

[0175] Adhesion level: Level 6

[0176] Next, the silicon wafer with the dicing die bonding integrated film is singulated into multiple chips (size 2mm×2mm) with adhesive sheets by blade dicing (reference Figure 9 (b)).

[0177] <Crystal Cutting Conditions>

[0178] Die cutter: DFD6361 (manufactured by DISCO Corporation)

[0179] Blade: ZH05-SD4000-N1-70-BB (manufactured by DISCO Corporation)

[0180] Blade speed: 40000rpm

[0181] Cutting speed: 30mm / s

[0182] Blade height: 90μm

[0183] Groove depth from the surface of the pressure-sensitive adhesive layer to the substrate layer: 20 μm

[0184] ·Water volume during crystal cutting

[0185] Blade cooler: 1.5L / min

[0186] Spray: 1.0L / min

[0187] Spray: 1.0L / min

[0188] One day after dicing, the chip with the adhesive sheet was pushed in from the substrate layer side using a push jig P under the following measurement conditions to measure the edge peel strength of the chip with the adhesive sheet (reference Figure 9 (c)). Figure 10 This is a graph showing an example of the relationship between displacement (mm) and thrust (N) caused by pushing. Figure 10 As shown, the thrust temporarily decreases, and a change point appears on the graph. The thrust value at this change point is defined as the edge peel strength. In addition, before the measurement, the surface of the base material layer corresponding to the center of the chip was marked with a marker. Figure 11 This is a schematic top view showing a state where a mark is attached at a position corresponding to the center of the chip to be measured. The mark M at the center of the chip is measured and determined using a ruler. The measurement was performed when N=10. After measuring one chip, the next measurement was performed after 3 chips were separated (refer to Figure 11 The results are shown in Table 2.

[0189] <Measurement Conditions>

[0190] ·Measurement device: Small tabletop testing machine EZ-SX (manufactured by Shimadzu Corporation)

[0191] Force sensor: 50N

[0192] Push-in fixture: ZTS series accessory (Shape: conical, manufactured by IMADA CO., LTD.)

[0193] Pushing speed: 60mm / min

[0194] Temperature: 23°C

[0195] Humidity: 45±10%

[0196] (5) Evaluation of pick-up properties

[0197] After the edge peel strength was measured, 100 chips with adhesive sheets attached were picked up under the following conditions.

[0198] <Pickup Conditions>

[0199] Die bonding device: DB800-HSD (manufactured by Hitachi High-Tech Corporation)

[0200] Push pin: EJECTORNEEDLE SEN2-83-05 (diameter: 0.7 mm, tip shape: hemispherical with a radius of 350 μm, manufactured by MICRONICS JAPAN CO., LTD.)

[0201] Push-up height: 200μm

[0202] Pushing speed: 1mm / s

[0203] In addition, a push pin was placed in the center of the chip. A pick-up success rate of 100% was designated "A," a rate of 70% or more but less than 100% was designated "B," and a rate less than 70% was designated "C." The results are shown in Table 2.

[0204]

[0205] As shown in Table 2, the pick-up properties of the dicing die bonding integrated film of Examples 1 to 5 are better than that of the dicing die bonding integrated film of Comparative Example 1. Specifically, in Comparative Example 1, since the difference of (f2-f1) is greater than that of Examples 1 to 5, the curing shrinkage and edge peeling strength are also higher than those of Examples 1 to 5, and the pick-up properties are insufficient. Based on the above results, it is confirmed that the dicing die bonding integrated film of the present invention can be applied to processes including singulating a wafer into a plurality of small chips (area 0.1 to 9 mm 2) process for manufacturing a semiconductor device, and having a pressure-sensitive adhesive layer with excellent pickup properties.

[0206] Explanation of symbols

[0207] 1-base layer, 3-pressure-sensitive adhesive layer, 3a-first region, 3b-second region, 5-adhesive layer, 5P, 5p-adhesive sheet, 5C-cured material, 8-DAF, 10-cutting die bonding integrated film (film), 42-pin, 44-suction chuck, 50-sealing layer, 60-structure, 70-substrate, 80-support plate, 100-semiconductor device, DR-cutting ring, F1-first surface, F2-second surface, M-mark, P-push-in fixture, Rw-region, S1, S2, S3, S4, S, Ts-chip, Ta-chip with adhesive sheet, W-wafer, Ws-silicon wafer, W1, W2, W3, W4-wire.

Claims

1. A dicing and die-bonding integrated film comprising: substrate layer; a pressure-sensitive adhesive layer having a first surface facing the substrate layer and a second surface opposite to the first surface, and comprising an active energy ray-curable pressure-sensitive adhesive; and The adhesive layer is provided so as to cover the central portion of the second surface. The active energy ray-curable pressure-sensitive adhesive comprises a (meth)acrylic resin having a chain-polymerizable functional group, wherein the functional group is at least one selected from an acryloyl group and a methacryloyl group, and the content of the functional group in the (meth)acrylic resin is 0.1 to 1.2 mmol / g. The pressure-sensitive adhesive layer has a first region and a second region, wherein the first region includes at least a region corresponding to a wafer attachment position in the pressure-sensitive adhesive layer, and the second region is provided so as to surround the first region. The first region is a region where the adhesive strength is reduced compared to the second region due to irradiation with active energy rays, and the irradiation dose of the active energy rays is 10 to 1000 mJ / cm 2 , When the adhesive force of the first region of the pressure-sensitive adhesive layer to the adhesive layer is f1 (N / 25 mm) measured at a temperature of 23° C., a peeling angle of 30°, and a peeling speed of 60 mm / min, and the adhesive force of the second region of the pressure-sensitive adhesive layer to the adhesive layer is f2 (N / 25 mm) measured at a temperature of 23° C., a peeling angle of 30°, and a peeling speed of 60 mm / min, the difference between f2 and f1 (f2-f1) is 7.0 to 9.0 N / 25 mm, The dicing die bonding integrated film is used to separate wafers into 0.1-9 mm 2 A semiconductor device manufacturing process that involves multiple chip processes with a large area.

2. The dicing and die bonding integrated film according to claim 1, wherein: The f1 is 1.1-4.5 N / 25 mm.

3. The dicing and die bonding integrated film according to claim 1 or 2, wherein: The f1 is 1.1 to 3.0 N / 25 mm.

4. The dicing and die bonding integrated film according to claim 1 or 2, wherein: The adhesive strength of the second region of the pressure-sensitive adhesive layer to the stainless steel substrate measured under the conditions of a temperature of 23° C., a peel angle of 90°, and a peel speed of 50 mm / min is 0.2 N / 25 mm or more.

5. The dicing and die bonding integrated film according to claim 1 or 2, wherein: The active energy ray-curable pressure-sensitive adhesive further comprises a cross-linking agent, The content of the cross-linking agent is 0.1 to 15% by mass based on the total mass of the active energy ray-curable pressure-sensitive adhesive. 6 . The dicing and die bonding integrated film according to claim 5 , wherein: The cross-linking agent is a reaction product of a polyfunctional isocyanate having two or more isocyanate groups in one molecule and a polyol having three or more hydroxyl groups in one molecule.

7. The dicing and die bonding integrated film according to claim 1 or 2, wherein: The adhesive layer is composed of an adhesive composition, which includes a (meth) acrylic copolymer containing reactive groups, a curing accelerator and a filler.

8. A method for manufacturing a dicing die-bonding integrated film, the method being the method for manufacturing a dicing die-bonding integrated film according to any one of claims 1 to 7, the method comprising: a step of producing a laminate on the surface of a base material layer, the laminate including a pressure-sensitive adhesive layer composed of an active energy ray-curable pressure-sensitive adhesive and the adhesive layer formed on the surface of the pressure-sensitive adhesive layer; and a step of irradiating a region of the pressure-sensitive adhesive layer included in the laminate, which region becomes the first region, with active energy rays.

9. A method for manufacturing a semiconductor device, comprising: A step of preparing the dicing-die bonding integrated film according to any one of claims 1 to 7; a step of attaching a wafer to the adhesive layer of the dicing die bonding integrated film and attaching a dicing ring to the second surface of the pressure-sensitive adhesive layer; a step of singulating the wafer into a plurality of chips; The step of picking up the chip together with the adhesive sheet formed by singulating the adhesive layer from the pressure-sensitive adhesive layer; and The chip is mounted on a substrate or other chips via the adhesive sheet.

Images