Semiconductor structure cleaning method

By combining the formation of a fluid passivation film on the surface of the semiconductor chip and the wet cleaning process, the arc defect problem caused by the charge on the surface of the chip is solved, and the slow release of charge and the protection of the chip structure are achieved.

CN114649191BActive Publication Date: 2025-03-18SEMICON MFG INT (SHANGHAI) CORP +1
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Patent Information

Application Number
CN202011523366.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2020-12-21
Publication Date
2025-03-18
Estimated Expiration
2040-12-21

AI Technical Summary

Technical Problem

During the semiconductor chip manufacturing process, the etching process containing plasma and ion implantation process are prone to generate charge on the chip surface, resulting in rapid discharge during wet cleaning, forming arc defects and damaging the chip structure.

Method used

A fluid passivation film is formed on the substrate surface, and a first decharge treatment is performed through a wet cleaning process to form a capacitive structure to avoid direct discharge. Then the fluid passivation film is fused with the cleaning solution, diluting the solution concentration, reducing the conductivity, and slowly releasing the charge.

Benefits of technology

Effectively prevent the rapid release of charge on the surface of the chip, reduce the occurrence of arc defects, and ensure the improvement of the chip structure integrity and yield.

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Abstract

A method for cleaning a semiconductor structure comprises: providing a substrate, the substrate comprising a functional surface and a back surface opposite to the functional surface; forming a fluid passivation film on the functional surface of the substrate; after forming the fluid passivation film, performing a first charge removal treatment on the surface of the functional surface of the substrate using a wet cleaning process; after performing the first charge removal treatment, performing a main cleaning on the surface of the substrate. The performance of the semiconductor structure after cleaning by the method is improved.
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