Parameter correction method and semiconductor device

Abstract

A parameter calibration method is used to calibrate multiple parameters corresponding to multiple electronic components to be calibrated in a circuit, comprising the following steps: (A) turning off all electronic components to be calibrated, and selecting a first electronic component from the multiple electronic components to be calibrated as the electronic component to be calibrated; (B) turning on the electronic component to be calibrated, and executing a calibration procedure on the electronic component to be calibrated to determine a set value of the parameter corresponding to the electronic component to be calibrated, wherein after the set value is determined, the electronic component to be calibrated becomes a calibrated electronic component; and (C) selecting a second electronic component from the multiple electronic components to be calibrated as the electronic component to be calibrated, and executing step (B), wherein step (C) is repeatedly executed until all electronic components to be calibrated become calibrated electronic components, and when executing step (C), the calibrated electronic components remain turned on.

Description

Technical Field

[0001] The present invention relates to a circuit parameter calibration method, in particular to a calibration method which can effectively compensate for the equalizer circuit parameter deviation caused by process variation. Background Art

[0002] Signal attenuation is an unavoidable problem in the communication process. Generally speaking, the longer the transmission distance, the more serious the attenuation of the high-frequency components of the signal. Therefore, equalizers are usually used in communication systems to compensate for signal attenuation.

[0003] For long-distance signal transmission, the receiver usually needs to estimate the length of the transmission line or transmission channel and use this information to adjust the equalizer circuit parameters, such as setting the appropriate signal gain value according to the transmission distance to optimize the overall signal-to-noise ratio. Therefore, being able to accurately evaluate the transmission distance to select appropriate parameters is often an important factor in whether the communication system can work properly.

[0004] However, the design values ​​of circuit components (e.g., capacitance values, resistance values, etc.) may be offset due to process variation during chip manufacturing. Therefore, a specific component in the same product may have different offsets between different chips because it belongs to different process corners (e.g., Fast / Fast (FF) corner, Slow / Slow (SS) corner, Typical / Typical (TT) corner, etc.). For the equalizer, the offset of parameters will cause the frequency position deviation and peak size change of the high-frequency gain peak, resulting in different chips having completely different frequency responses at the same transmission distance due to the difference in equalizer parameters, which in turn affects the accuracy of evaluating the transmission line length or transmission channel length. Inaccurate length estimates will lead to incorrect receiver parameter settings, ultimately causing cyclic redundancy check (CRC) errors and transmission packet loss.

[0005] To solve this problem, a parameter correction method is needed that can effectively compensate for circuit parameter deviation caused by process variation. Summary of the invention

[0006] The purpose of the present invention is to solve the problem of circuit parameter deviation caused by process variation.

[0007] According to an embodiment of the present invention, a parameter correction method is provided for correcting multiple parameters corresponding to multiple electronic components to be corrected of a circuit, comprising the following steps: (A) turning off all electronic components to be corrected, and selecting a first electronic component from the multiple electronic components to be corrected as the electronic component to be corrected; (B) turning on the electronic component to be corrected, and executing a correction procedure on the electronic component to be corrected to determine a set value of the parameter corresponding to the electronic component to be corrected, wherein after the set value is determined, the electronic component to be corrected becomes a corrected electronic component; and (C) selecting a second electronic component from the multiple electronic components to be corrected as the electronic component to be corrected, and executing step (B), wherein step (C) is repeatedly executed until all electronic components to be corrected become corrected electronic components, and when executing step (C), the corrected electronic component remains turned on.

[0008] According to another embodiment of the present invention, a semiconductor device includes an equalizer circuit and a control unit. The control unit is coupled to the equalizer circuit and is used to calibrate multiple parameters corresponding to multiple electronic components to be calibrated in the equalizer circuit, wherein the control unit performs the following operations: (A) turning off all electronic components to be calibrated in the equalizer circuit, and selecting a first electronic component from the multiple electronic components to be calibrated as the electronic component to be calibrated; (B) turning on the electronic component to be calibrated, and executing a calibration procedure on the electronic component to be calibrated to determine a setting value of the parameter corresponding to the electronic component to be calibrated, wherein after the setting value is determined, the electronic component to be calibrated is regarded as a calibrated electronic component; and (C) selecting a second electronic component from the multiple electronic components to be calibrated as the electronic component to be calibrated, and executing operation (B). Operation (C) is repeatedly executed until all electronic components to be calibrated are regarded as calibrated electronic components, and when executing operation (C), the control unit controls the calibrated electronic component to remain turned on. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 FIG. 4 is a block diagram of a semiconductor device according to an embodiment of the present invention.

[0010] Figure 2 FIG. 4 is a circuit diagram showing an example of an equalizer circuit according to an embodiment of the present invention.

[0011] Figure 3 is a flow chart showing a parameter calibration process according to an embodiment of the present invention.

[0012] Figure 4 is a flow chart showing an example of a calibration procedure performed on an electronic component to be calibrated according to an embodiment of the present invention.

[0013] Figure 5is a flow chart showing an example of a calibration procedure performed on an electronic component to be calibrated according to another embodiment of the present invention.

[0014] Figure 6 FIG. 1 is a diagram showing the frequency response of the circuit according to an embodiment of the present invention after parameter calibration.

[0015] Figure 7 FIG. 4 is a diagram showing the frequency response of the circuit according to another embodiment of the present invention after parameter calibration. DETAILED DESCRIPTION

[0016] Figure 1 1 is a block diagram of a semiconductor device according to an embodiment of the present invention. The semiconductor device 100 may be an integrated circuit (IC) or a chip, for example, a receiver chip suitable for a communication system. The semiconductor device 100 may include at least a control unit 120 and an equalizer circuit 110, for example, a continuous time linear equalizer (CTLE). The control unit 120 is coupled to the equalizer circuit 110, and is used to calibrate the parameters corresponding to the multiple electronic components of the equalizer circuit 110 after the semiconductor device 100 is manufactured, for example, after the chip is shipped. According to an embodiment of the present invention, the control unit 120 may be pre-written with a predetermined firmware program code, and the control unit 120 may start to perform a parameter calibration process on the equalizer circuit 110 by executing the firmware program code. Through parameter calibration, the frequency response of the equalizer circuit 110 may be adjusted to have a specific shape, so as to overcome the problem of numerical deviation of the parameters corresponding to the multiple electronic components of the equalizer circuit 110 due to process variation during the manufacturing process of the semiconductor device. In this way, even if multiple semiconductor devices produced based on the same circuit configuration are ultimately distributed in different process corners, such as the aforementioned FF corner, SS corner, or TT corner, the frequency response of the equalizer circuit 110 in each semiconductor device can still be calibrated to have the same or relatively similar shape.

[0017] It should be noted that Figure 1 This is a simplified block diagram, in which only components related to the present invention are shown. Those familiar with the art will understand that the semiconductor device or receiver chip may include other components not shown in the figure. Figure 1 components, such as antennas, power amplifiers, mixers, RF signal processing circuits, etc., to implement the required signal processing functions.

[0018] Figure 22 is a circuit diagram showing an example of an equalizer circuit according to an embodiment of the present invention. The equalizer circuit 210 may include one or more filter circuits, for example, filter circuits 211 and 212. The filter circuit 211 may include a resistor R A With capacitor C A , the filter circuit 212 may include a resistor R B With capacitor C B , or may further include an amplifier circuit 213. In an embodiment of the present invention, the electronic component to be calibrated in the semiconductor device 100 may be a capacitor in the equalizer circuit, for example, the capacitor C of the filter circuit 211. A and the capacitor C of the filter circuit 212 B , and the parameter to be calibrated is the capacitance value.

[0019] It should be noted that Figure 2 Only one of the various equalizer circuits to which the present invention can be applied is shown. Those skilled in the art will understand that the parameter correction method proposed in the present invention should be applicable to any equalizer circuit not shown in this specification. In addition, it should be noted that the parameter correction method proposed in the present invention is not limited to correcting only the electronic components in the equalizer circuit. Those skilled in the art will understand that the parameter correction method proposed in the present invention should be applicable to any circuit in a semiconductor device to correct the offset of the parameters corresponding to the electronic components in the circuit caused by process variation.

[0020] Figure 3 1 is a flow chart showing a parameter calibration process according to an embodiment of the present invention. The parameter calibration process may include the following steps / operations controlled or executed by the control unit 120:

[0021] Step S302: Turn off all electronic components to be calibrated in the circuit to be calibrated (e.g., the equalizer circuit 110), and select the first electronic component from the electronic components to be calibrated as the electronic component to be calibrated (corresponding to step / operation (A) described later). For example, assuming that the total number of electronic components to be calibrated in the circuit is N, the control unit 120 can use the variable i as the index value of the electronic component to be calibrated, where 1≤i≤N, and i and N are both positive integers. In step S302, the control unit 120 can initially set i=1. Refer again to Figure 2 , assuming that the electronic components to be calibrated include capacitor C A With C B The control unit 120 can use the switch devices 214 and 215 to control the capacitors C A With C BThe on or off state. In step S302, the control unit 120 can control the states of the switching devices 214 and 215 to "open", thereby closing the capacitors C A and C B , rendering them disabled in the overall circuit. It should be noted that in the embodiments of the present invention, the selection order of the electronic components to be calibrated is not restricted.

[0022] Step S304: Turn on the electronic component to be calibrated (corresponding to a part of the subsequent step / operation (B)), that is, turn on the i-th electronic component. Continuing with the previous example, in step S304, the control unit 120 can control the state of the switching device 214 to "closed", thereby turning on the capacitor C A , enabling it.

[0023] Step S306: Execute a calibration program on the electronic component to be calibrated to determine the set value of the parameter corresponding to the electronic component to be calibrated (corresponding to another part of the subsequent step / operation (B)), that is, determine the set value of the i-th electronic component. A more detailed description of the calibration program will be provided below. After determining the set value of the electronic component currently being calibrated, this electronic component to be calibrated becomes a calibrated electronic component. For example, the control unit 120 can regard it as a calibrated electronic component.

[0024] Step S308: Determine whether the calibration programs for all the electronic components to be calibrated have been completed. For example, determine whether i < N. If so, continue to execute step S310. If not, it means that the calibration programs for all the electronic components to be calibrated have been completed, and the parameter calibration process can be terminated.

[0025] Step S310: Select a second electronic component from the remaining electronic components to be calibrated as the next electronic component to be calibrated. For example, the control unit 120 can set i = i + 1 and return to execute step S304 (corresponding to the subsequent step / operation (C)). Continuing with the previous example, when step S304 is executed again, the control unit 120 can control the state of the switching device 215 to "closed", thereby turning on the capacitor C B , enabling it.

[0026] In the embodiments of the present invention, the calibration program of the electronic components is repeatedly executed until all the electronic components to be calibrated become calibrated electronic components. In addition, in the embodiments of the present invention, the components to be calibrated are turned on one by one. That is, when step S304 is executed each time, only the currently selected electronic component to be calibrated is turned on, and other unselected electronic components to be calibrated are not turned on. In addition, in the embodiments of the present invention, the control unit 120 controls the calibrated electronic components to remain turned on.

[0027] According to the embodiment of the present invention, the calibration procedure can be performed using signals of a small number of frequencies to shorten the calibration period, wherein the number of test signals can be flexibly selected according to the required computational complexity, calibration period length, and calibration accuracy.

[0028] Figure 4 is a flow chart showing an example of a calibration procedure performed on an electronic component to be calibrated according to an embodiment of the present invention, which may include the following steps / operations performed by the control unit 120:

[0029] Step S402: The parameter corresponding to the electronic component to be calibrated is set to a first setting value. In an embodiment of the present invention, the electronic component to be calibrated may have a plurality of corresponding setting values, which are values ​​generated according to the original setting value in consideration of process variation. For example, assuming that process variation may cause a 20% parameter offset, the control unit 120 may multiply the original setting value (e.g., the original capacitance value) set by the electronic component during circuit design by a plurality of values ​​between (1-20%) and (1+20%) to generate a plurality of setting values ​​that can be used for the corresponding calibration procedure.

[0030] Step S404: Control the circuit to be calibrated (e.g., the equalizer circuit 110) to generate an output signal according to a test signal having a first frequency. According to one embodiment of the present invention, the test signal may be a sine signal, a cosine signal, or other single frequency signals. The control unit 120 may directly input the test signal into the input terminal V IN , so that it generates a corresponding output signal according to the test signal, and at the output terminal V of the equalizer circuit 110 OUT Receive output signal.

[0031] Step S406: Calculate the energy of the frequency component at the first frequency in the output signal, and calculate the gain value according to the energy of the test signal and the energy of the frequency component at the first frequency in the output signal. In this operation, the control unit 120 can perform a Fast Fourier Transform (FFT) on the output signal to obtain the energy on the spectrum, and compare it with the energy of the original test signal to obtain the corresponding gain value.

[0032] Step S408: Change the setting value of the parameter, for example, set the parameter corresponding to the electronic component to be calibrated to a second setting value different from the first setting value, and execute steps S404 and S406 to obtain a gain value corresponding to the second setting value.

[0033] Step S410: Determine the setting value of the parameter corresponding to the calibrated electronic component according to the target value, the gain value corresponding to the first setting value, and the gain value corresponding to the second setting value.

[0034] According to one embodiment of the present invention, in step S410, the target value may be a target gain value at a first frequency, and the control unit 120 may select one of the first setting value and the second setting value having a corresponding gain value closest to the target gain value as the parameter setting value of the electronic component currently being calibrated.

[0035] It should be noted that in some embodiments of the present invention, step S408 may also be repeatedly executed multiple times according to different setting values ​​of the parameters corresponding to the electronic component being calibrated. For example, the calibration procedure may add the following judgment operation / step after step S408: whether all setting values ​​of the parameter have been tested. If not, return to execute step S408. If so, continue to execute step S410. And after executing step S408 multiple times, the setting value in step S410 can be determined based on the target value and the gain values ​​corresponding to multiple different setting values. For example, the control unit 120 can select one of the multiple setting values ​​with a corresponding gain value closest to the target gain value as the parameter setting value of the electronic component currently being calibrated.

[0036] Figure 5 is an exemplary flow chart showing a calibration procedure performed on an electronic component to be calibrated according to another embodiment of the present invention, which may include the following steps / operations performed by the control unit 120:

[0037] Step S502: The parameter corresponding to the electronic component to be calibrated is set to a first setting value. As described above, in the embodiment of the present invention, the electronic component to be calibrated may have a plurality of corresponding setting values, which are values ​​generated according to the original setting value in consideration of process variation. For example, assuming that process variation may cause a 20% parameter offset, the control unit 120 may multiply the original setting value (e.g., the original capacitance value) set by the electronic component during circuit design by a plurality of values ​​between (1-20%) and (1+20%) to generate a plurality of setting values ​​that can be used for the corresponding calibration procedure.

[0038] Step S504: Control the circuit to be calibrated (e.g., the equalizer circuit 110) to generate a first output signal according to a first test signal having a first frequency, and to generate a second output signal according to a second test signal having a second frequency. According to one embodiment of the present invention, the test signal may be a sine signal, a cosine signal, or other single frequency signals. The control unit 120 may directly input the test signal to the input terminal V of the equalizer circuit 110. IN, so that it generates a corresponding output signal according to the test signal, and at the output terminal V of the equalizer circuit 110 OUT Receive the output signal. In addition, in the embodiment of the present invention, the first test signal and the second test signal can be a low frequency signal and a high frequency signal respectively.

[0039] Step S506: Calculate the energy of the frequency component at the first frequency in the first output signal, and calculate the first gain value according to the energy of the first test signal and the energy of the frequency component at the first frequency in the first output signal, and calculate the energy of the frequency component at the second frequency in the second output signal, and calculate the second gain value according to the energy of the second test signal and the energy of the frequency component at the second frequency in the second output signal. In this operation, the control unit 120 can perform a fast Fourier transform on the output signal to obtain the energy on the spectrum, and compare it with the energy of the original test signal, for example, divide the energy of the frequency component at the first / second frequency in the first / second output signal by the energy of the first / second test signal to obtain the corresponding first / second gain value.

[0040] Step S508: Change the setting value of the parameter, for example, set the parameter corresponding to the electronic component to be calibrated to a second setting value different from the first setting value, and execute steps S504 and S506 to obtain the first gain value and the second gain value corresponding to the second setting value.

[0041] Step S510: Determine a setting value of a parameter corresponding to the calibrated electronic component according to at least one target value, a first gain value and a second gain value corresponding to the first setting value, and a first gain value and a second gain value corresponding to the second setting value.

[0042] According to one embodiment of the present invention, at least one target value in step S510 may include: a first target gain value at a first frequency and a second target gain value at a second frequency, or may be a ratio of the first target gain value to the second target gain value. The control unit 120 may select one corresponding to the minimum error of the following errors from the first setting value and the second setting value as the parameter setting value of the electronic component currently being calibrated: the error between the first gain value corresponding to the first setting value and the first target gain value, the error between the second gain value corresponding to the first setting value and the second target gain value, the error between the first gain value corresponding to the second setting value and the first target gain value, and the error between the second gain value corresponding to the second setting value and the second target gain value. Alternatively, the control unit 120 may select one having a ratio of the corresponding first gain value to the second gain value closest to the ratio of the first target gain value to the second target gain value from the first setting value and the second setting value as the parameter setting value of the electronic component currently being calibrated.

[0043] As mentioned above, it should be noted that in some embodiments of the present invention, step S508 may also be repeatedly executed multiple times according to different setting values ​​of the parameters corresponding to the electronic component being calibrated. For example, the calibration procedure may add the following determination operation / step after step S508: whether all setting values ​​of the parameter have been tested. If not, return to execute step S508. If so, continue to execute step S510. And after executing step S508 multiple times, the setting value in step S510 can be determined based on the target value and the first gain value and the second gain value corresponding to multiple different setting values. For example, the control unit 120 can select one of the multiple setting values ​​with a corresponding gain value ratio closest to the target gain value ratio as the parameter setting value of the electronic component currently being calibrated.

[0044] In addition, it should be noted that although the above embodiment uses two test signals of different frequencies to perform the calibration procedure, the present invention is not limited thereto. The parameter calibration method proposed in the present invention should be able to use more than two test signals of different frequencies to perform the calibration procedure, and those familiar with the art can also deduce the implementation method of using more than two test signals of different frequencies to perform the calibration procedure based on the above description, so it will not be repeated here.

[0045] Figure 6 FIG. 2 is a diagram showing the frequency response of the circuit according to one embodiment of the present invention after parameter correction. Figure 6 The frequency response of the chips distributed in different process corners is shown after the parameter setting values ​​are determined by implementing the parameter calibration method proposed by the present invention on the circuit, and Figure 6 The circuit is shown with only one capacitor turned on (for example, Figure 2 The capacitor C shown B ) when the frequency response is obtained. Figure 6 As shown, after implementing the parameter calibration method proposed by the present invention on the same circuit of each chip, different parameter setting values ​​may be obtained. However, no matter where the chip is distributed in TT, FF or SS, the frequency response curves obtained after parameter calibration are very similar.

[0046] Figure 7 FIG. 2 is a diagram showing the frequency response of a circuit according to another embodiment of the present invention after parameter correction, wherein Figure 7 It also shows the frequency response of the chips distributed in different process corners after the parameter setting values ​​are determined by implementing the parameter correction method proposed by the present invention on the circuit, and Figure 7 The circuit is shown with two capacitors turned on (for example, Figure 2 The capacitor C shown A With C B ) when the frequency response is obtained. Figure 7As shown in FIG. 1 , by implementing the parameter calibration method proposed by the present invention on the same circuit of each chip, each chip may obtain different parameter setting values. For example, for the chips distributed at the corners of TT, the capacitor C A Can be set to a third setting value (in the figure, simply marked as C A =3, the same below), for the chips distributed in the corners of FF, the capacitor C A Can be set to the sixth setting value (C A =6), and for the chips distributed in the corners of SS, the capacitor C A Can be set to the first setting value (C A =1). However, no matter where the chip is located in TT, FF or SS, the obtained frequency response curves are very similar.

[0047] In summary, the parameter correction method proposed in the present invention can effectively compensate for the circuit parameter offset caused by process variation. Through parameter correction, the frequency response of the circuit can be corrected back to a predetermined shape, or adjusted to have a specific shape. In this way, even if the chip products shipped are distributed in different process corners, the frequency response of the circuit in each chip can still be corrected to have the same or quite similar shape. Thereby, the accuracy of subsequent transmission distance estimation and receiver circuit parameter selection can be improved. In addition, in conventional technology, the parameters of the equalizer circuit are adjusted according to the signal-to-noise ratio of the received signal, but the method of adjusting the parameters according to the signal-to-noise ratio cannot ensure the accuracy of subsequent transmission distance estimation. Compared with conventional technology, the parameter correction method proposed in the present invention can ensure the accuracy of transmission distance estimation and effectively improve transmission performance.

[0048] The above descriptions are only preferred embodiments of the present invention. Equivalent changes and modifications made within the scope of the present invention should all fall within the scope of the present invention.

[0049]

Explanation of symbols

[0050] 100: Semiconductor devices

[0051] 110, 210: Equalizer circuit

[0052] 120: Control unit

[0053] 211, 212: Filter circuit

[0054] 213: Amplifier Circuit

[0055] 214, 215: Switchgear

[0056] C A , C B :capacitance

[0057] R A , RB :resistance

[0058] S302~S310, S402~S410, S502~S510: Steps

[0059] V IN : Input terminal

[0060] V OUT : Output

Claims

1. A parameter correction method for correcting a plurality of parameters corresponding to a plurality of electronic components to be corrected in a circuit, comprising the following steps: (A) turning off all electronic components to be calibrated, and selecting a first electronic component from the plurality of electronic components to be calibrated as an electronic component to be calibrated; (B) turning on the electronic component to be calibrated and executing a calibration procedure on the electronic component to be calibrated to determine a setting value of a parameter corresponding to the electronic component to be calibrated, wherein after the setting value is determined, the electronic component to be calibrated becomes a calibrated electronic component; and (C) selecting a second electronic component from the plurality of electronic components to be calibrated as the electronic component to be calibrated, and executing step (B), The step (C) is repeatedly executed until all the electronic components to be calibrated become calibrated electronic components, and when executing the step (C), the calibrated electronic components remain turned on.

2. The parameter calibration method as claimed in claim 1, wherein the calibration procedure performed on the electronic component to be calibrated comprises the following steps: (B21) setting the parameter corresponding to the electronic component to be calibrated to a first set value; (B22) generating, by the circuit, a first output signal according to a first test signal having a first frequency and a second output signal according to a second test signal having a second frequency; (B23) calculating the energy of the frequency component at the first frequency in the first output signal, and calculating a first gain value according to the energy of the first test signal and the energy of the frequency component at the first frequency in the first output signal, and calculating the energy of the frequency component at the second frequency in the second output signal, and calculating a second gain value according to the energy of the second test signal and the energy of the frequency component at the second frequency in the second output signal; (B24) setting the parameter corresponding to the electronic component to be calibrated to a second setting value different from the first setting value, and executing steps (B22) and (B23) to obtain the first gain value and the second gain value corresponding to the second setting value; as well as (B25) Determine the setting value of the parameter corresponding to the first electronic component based on at least one target value, the first gain value and the second gain value corresponding to the first setting value, and the first gain value and the second gain value corresponding to the second setting value. 3 . The parameter calibration method as claimed in claim 2 , wherein the at least one target value comprises a first target gain value of the first frequency and a second target gain value of the second frequency.

4. The parameter correction method as described in claim 2, wherein step (B24) is repeatedly executed multiple times according to different setting values ​​of the parameter corresponding to the electronic component to be corrected, and after executing multiple steps (B24), in step (B25), the setting value is determined based on the at least one target value and the first gain value and the second gain value corresponding to the different setting values. 5 . The parameter calibration method as claimed in claim 1 , wherein the plurality of electronic components to be calibrated are a plurality of capacitors in the circuit, and the plurality of parameters are capacitance values ​​of the plurality of capacitors.

6. A semiconductor device comprising: Equalizer circuit; as well as A control unit is coupled to the equalizer circuit and is used to calibrate a plurality of parameters corresponding to a plurality of electronic components to be calibrated of the equalizer circuit, wherein the control unit performs the following operations: (A) turning off all electronic components to be calibrated of the equalizer circuit, and selecting a first electronic component from the plurality of electronic components to be calibrated as an electronic component to be calibrated; (B) turning on the electronic component to be calibrated and executing a calibration procedure on the electronic component to be calibrated to determine a setting value of a parameter corresponding to the electronic component to be calibrated, wherein after the setting value is determined, the electronic component to be calibrated is regarded as a calibrated electronic component; and (C) selecting a second electronic component from the plurality of electronic components to be corrected as the electronic component to be corrected, and performing operation (B), The operation (C) is repeatedly performed until all the electronic components to be calibrated are regarded as calibrated electronic components, and when performing the operation (C), the control unit controls the calibrated electronic components to remain turned on.

7. The semiconductor device as claimed in claim 6, wherein the calibration procedure performed by the control unit on the electronic component to be calibrated comprises the following operations: (B21) setting the parameter corresponding to the electronic component to be calibrated to a first set value; (B22) causing the equalizer circuit to generate a first output signal based on a first test signal having a first frequency and a second output signal based on a second test signal having a second frequency; (B23) calculating the energy of the frequency component at the first frequency in the first output signal, and calculating a first gain value according to the energy of the first test signal and the energy of the frequency component at the first frequency in the first output signal, and calculating the energy of the frequency component at the second frequency in the second output signal, and calculating a second gain value according to the energy of the second test signal and the energy of the frequency component at the second frequency in the second output signal; (B24) setting the parameter corresponding to the electronic component to be calibrated to a second setting value different from the first setting value, and performing operations (B22) and (B23) to obtain the first gain value and the second gain value corresponding to the second setting value; as well as (B25) Determine the setting value of the parameter corresponding to the first electronic component based on at least one target value, the first gain value and the second gain value corresponding to the first setting value, and the first gain value and the second gain value corresponding to the second setting value. 8 . The semiconductor device as claimed in claim 7 , wherein the at least one target value comprises a first target gain value of the first frequency and a second target gain value of the second frequency.

9. A semiconductor device as described in claim 7, wherein operation (B24) is repeatedly performed multiple times according to different setting values ​​of the parameter corresponding to the electronic component to be calibrated, and after performing multiple operations (B24), in operation (B25), the setting value is determined based on the at least one target value and the first gain value and the second gain value corresponding to the different setting values. 10 . The semiconductor device as claimed in claim 6 , wherein the plurality of electronic components to be calibrated are a plurality of capacitors in the equalizer circuit, and the plurality of parameters are capacitance values ​​of the plurality of capacitors.

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