Sputtering device and wafer coating method

Abstract

The present invention discloses a sputtering device and a wafer coating method. The sputtering device includes a reaction unit, and the reaction unit includes a reaction chamber, a rack and a heating element. A plurality of target materials are arranged in the reaction chamber, and the plurality of target materials are arranged at intervals along the circumference of the reaction chamber. The rack is provided with at least one supporting position for placing wafers, and the rack can rotate in the reaction chamber to drive the supporting position to be arranged correspondingly to any one of the plurality of target materials. The number of heating elements is consistent with the number of supporting positions, and the heating elements are arranged correspondingly to the supporting positions. Arranging a plurality of target materials in a reaction chamber, and realizing the corresponding arrangement of wafers and different target materials by rotating the rack, realizes that the wafer can be subjected to multi-process coating in a reaction chamber, improves the production efficiency, and in addition, reduces the number of reaction chambers, so that the manufacturing cost of the sputtering device is reduced. In addition, there is no need for the wafer to leave the reaction chamber frequently, and the adverse effects of the environment on the wafer manufacturing process are avoided.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a sputtering device and a wafer coating method. Background Art

[0002] This section merely provides background information related to the present disclosure and is not necessarily prior art.

[0003] Wafer coating is usually completed by physical vapor deposition (PVD) sputtering, and is specifically implemented by a sputtering device. The sputtering device includes a reaction chamber and a robot. A single type of target material is arranged in the reaction chamber. When the wafer is coated, the robot places the wafer in the reaction chamber and sputters the wafer using the target material.

[0004] When the wafer needs to be coated with multiple target materials, a reaction chamber needs to be set up for each target material. During the coating process, after the wafer is sputtered in one reaction chamber, the robot transfers the wafer to the next reaction chamber for sputtering again until all target materials are sputtered on the wafer.

[0005] Providing multiple reaction chambers on the sputtering device increases the cost of the sputtering device. In addition, the method of switching the wafer between the multiple reaction chambers for sputtering processing is inefficient. Summary of the invention

[0006] A first aspect of the present invention provides a sputtering device, the sputtering device comprising a reaction unit, the reaction unit comprising:

[0007] A reaction chamber, wherein a plurality of target materials are arranged in the reaction chamber, and the plurality of target materials are arranged at intervals along the circumference of the reaction chamber;

[0008] A rack, wherein at least one supporting position for placing a wafer is provided on the rack, and the rack can be rotated in the reaction chamber to drive the supporting position to be arranged corresponding to any one of the plurality of target materials;

[0009] Heating elements, the number of the heating elements is consistent with the number of the supporting positions, and the heating elements are arranged corresponding to the supporting positions.

[0010] A second aspect of the present invention provides a wafer coating method, which is implemented according to the sputtering device as described above, and the wafer coating method comprises:

[0011] S10: placing the wafer on a supporting position of a rack in a reaction chamber so that the wafer is arranged corresponding to a target material;

[0012] S20: performing sputtering treatment on the wafer;

[0013] S30: After the wafer is sputtered, the rack is driven to rotate so that the wafer is placed corresponding to another target material;

[0014] S40: performing sputtering treatment on the wafer again;

[0015] S50: If the type of target material in a reaction chamber can meet the coating requirements of the wafer, repeat steps S30 and S40 until the sputtering process of the wafer is completed;

[0016] S60: If the type of target material in one reaction chamber cannot meet the coating requirements of the wafer, place the unprocessed wafer on the supporting position of the rack of another reaction chamber, so that the unprocessed wafer is set corresponding to a target material of another reaction chamber, and repeat steps S30 and S40 until the wafer is sputtered. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference numerals are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0018] Figure 1 Schematically shows a simplified structural diagram of a sputtering device according to a first embodiment of the present invention;

[0019] Figure 2 Schematically showing a structural diagram of a sputtering device according to a second embodiment of the present invention

[0020] Figure 3 for Figure 1 A partial cross-sectional view of the sputtering device shown in ;

[0021] Figure 4 for Figure 3 Schematic diagram of the rack structure of the sputtering device shown in (partial structure);

[0022] Figure 5 for Figure 4 A schematic structural diagram of the support portion of the storage rack shown in ;

[0023] Figure 6 The flowchart of the wafer coating method according to the present invention is schematically shown.

[0024] The reference numerals are as follows:

[0025] 100 is a sputtering device;

[0026] 10 is a reaction unit;

[0027] 11 is a reaction chamber, 111 is a target;

[0028] 12 is a storage rack, 121 is a through hole, 122 is a supporting position, 1221 is a supporting portion, and 1222 is a through hole;

[0029] 13 is a heating element, 131 is a heating portion, and 132 is a lifting portion;

[0030] 14 is a blocking structure;

[0031] 20 is a pick-and-place unit. DETAILED DESCRIPTION

[0032] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0033] It should be understood that the terms used herein are only for the purpose of describing specific example embodiments and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "one", "an" and "said" as used herein may also be meant to include plural forms. The terms "include", "comprise", "contain", and "have" are inclusive, and therefore specify the existence of stated features, steps, operations, elements and / or parts, but do not exclude the existence or addition of one or more other features, steps, operations, elements, parts, and / or combinations thereof. The method steps, processes, and operations described herein are not interpreted as necessarily requiring them to be performed in the specific order described or illustrated, unless the execution order is clearly indicated. It should also be understood that additional or alternative steps may be used.

[0034] Although the terms first, second, third, etc. can be used in the text to describe multiple elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer or section from another region, layer or section. Unless the context clearly indicates, terms such as "first", "second" and other numerical terms do not imply order or sequence when used in the text. Therefore, the first element, component, region, layer or section discussed below can be referred to as the second element, component, region, layer or section without departing from the teaching of the example embodiments.

[0035] For ease of description, spatial relative terms may be used herein to describe the relationship of one element or feature relative to another element or feature as shown in the figure, such as "inside", "outside", "inner side", "outer side", "below", "below", "above", "above", etc. Such spatial relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figure. For example, if the device in the figure is turned over, then the elements described as "below other elements or features" or "below other elements or features" will subsequently be oriented as "above other elements or features" or "above other elements or features". Therefore, the example term "below..." can include both upper and lower orientations. The device can be oriented otherwise (rotated 90 degrees or in other directions) and the spatial relative descriptors used in the text are interpreted accordingly.

[0036] like Figures 1 to 5 As shown, according to an embodiment of the present invention, the present invention proposes a sputtering device 100, the sputtering device 100 includes a reaction unit 10, the reaction unit 10 includes a reaction chamber 11, a rack 12 and a heating element 13, a plurality of target materials 111 are arranged in the reaction chamber 11, the plurality of target materials 111 are arranged at intervals along the circumference of the reaction chamber 11, at least one supporting position 122 for placing a wafer is provided on the rack 12, the rack 12 can rotate in the reaction chamber 11 to drive the supporting position 122 to correspond to any one of the plurality of target materials 111, the number of the heating elements 13 is consistent with the number of the supporting positions 122, and the heating elements 13 and the supporting positions 122 are arranged correspondingly.

[0037] Specifically, a plurality of target materials 111 are provided in the reaction chamber 11 of the sputtering device 100, the plurality of target materials 111 are arranged near the top of the reaction chamber 11, and the plurality of target materials 111 are arranged at intervals along the circumference of the reaction chamber 11, and the rack 12 is rotatably arranged in the reaction chamber 11, and the rack 12 is arranged near the bottom of the reaction chamber 11, and the support position 122 can be arranged corresponding to any target material 111 by rotating the rack 12 in the reaction chamber 11.

[0038] When the wafer is coated, the wafer is placed on the supporting position 122, and the rack 12 is driven to rotate so that the supporting position 122 corresponds to the bottom of a target material 111. At this time, the wafer on the supporting position 122 is set corresponding to the target material 111. At this time, a target material 111, the supporting position 122 and the heating element 13 corresponding to the supporting position 122 form a sputtering station, and the sputtering station is started (the target material 111 is bombarded with ions to achieve sputtering of the wafer, and the heating element 13 heats the wafer), so that the wafer is in the sputtering station. The wafer is sputtered at the sputtering station, and when the sputtering treatment is completed, the sputtering station stops working; the rack 12 rotates, so that the supporting position 122 drives the wafer to be set corresponding to the next target material 111. At this time, another target material 111, the supporting position 122 and the heating element 13 corresponding to the supporting position 122 form another sputtering station, which is started, so that the wafer is sputtered at the sputtering station, and when the sputtering treatment is completed, the sputtering station stops working; repeated wafer position switching realizes multi-process coating treatment of the wafer.

[0039] By arranging a plurality of target materials 111 in a reaction chamber 11 and realizing the corresponding arrangement of wafers and different target materials 111 through the rotation of the rack 12, it is possible to perform multi-process coating on the wafers in one reaction chamber 11. The wafers do not need to be frequently taken and placed during the entire process, thereby improving production efficiency. In addition, the number of reaction chambers 11 is reduced, so that the manufacturing cost of the sputtering device 100 is reduced. In addition, the wafers do not need to leave the reaction chamber 11 frequently, thereby avoiding adverse effects of the environment on the wafer manufacturing process (for example, bad spots on the wafers due to dust after leaving the reaction chamber 11, etc.).

[0040] It should be noted that the various targets 111 are arranged at equal intervals along the circumference of the reaction chamber 11 . By arranging the various targets 111 at equal intervals, the rotation amplitude of the rack 12 is made consistent, thereby simplifying the control logic and further improving the production efficiency.

[0041] It is further understood that the number of the supporting positions 122 is consistent with the number of the multiple target materials 111, and the supporting positions 122 are arranged corresponding to the multiple target materials 111. Specifically, the number of the supporting positions 122 is multiple, and the number of the supporting positions 122 is consistent with the type of the target materials 111 in the reaction chamber 11. When one supporting position 122 is arranged corresponding to one of the target materials 111, the other supporting positions 122 correspond to the other target materials 111 one by one, the multiple target materials 111 are arranged in the order of wafer coating, and the rotation direction of the rack 12 is consistent with the arrangement order of the multiple target materials 111.

[0042] When coating the wafer, a wafer is placed on each supporting position 122. As the rack 12 rotates, the wafers on each supporting position 122 are respectively arranged corresponding to each target material 111 according to the coating sequence. After the wafers are arranged corresponding to each target material 111, sputtering treatment can be performed. By arranging multiple supporting positions 122 on the rack 12 and arranging multiple target materials 111, the production efficiency of the product is further improved.

[0043] It should be pointed out that multiple supporting positions 122 are arranged at equal intervals along the rotation direction of the rack 12, and multiple target materials 111 are also arranged at equal intervals along the rotation direction of the rack 12. Switching the rack 12 once can achieve position switching of each supporting position 122, further improving the efficiency of the product production process.

[0044] Furthermore, if Figure 3 As shown, the heating element 13 includes a heating portion 131 and a lifting portion 132, and the lifting portion 132 is transmission-connected to the heating portion 131 to drive the heating portion 131 to move toward or away from the rack 12. Specifically, the number of the heating elements 13 corresponds to the type of the target material 111, and a heating element 13 is correspondingly arranged under each target material 111. When the supporting position 122 corresponds to the target material 111, the target material 111, the supporting position 122 and the heating element 13 constitute a sputtering station, and the wafer located on the supporting station can be sputtered.

[0045] When the wafer is placed on the supporting position 122 and is in the sputtering position, during the sputtering process of the wafer, the lifting part 132 drives the heating part 131 to move in the direction of the supporting position 122 close to the rack 12 until the heating part 131 is set close to the wafer, the heating part 131 starts heating the wafer, and the target 111 performs sputtering on the wafer. When the sputtering process of the wafer is completed, the lifting part 132 drives the heating part 131 to move in the direction away from the supporting position 122 of the rack 12. The movement of the heating part 131 driven by the lifting part 132 is realized to achieve the movement of the heating part 131 close to or away from the wafer, thereby ensuring the heating effect of the wafer, and then ensuring the effect of the wafer being sputtered.

[0046] It should be pointed out that the rack 12 has a through hole 1222, and a plurality of support portions 1221 are provided in the through hole 1222. The plurality of support portions 1221 are arranged at equal intervals along the circumference of the through hole 1222, and the support portions 1221 extend toward the center of the through hole 1222. The through hole 1222 and the support portions 1221 constitute the supporting position 122 of the rack 12. When the wafer is placed on the supporting position 122, the wafer is located in the through hole 1222 (the shape of the through hole 1222 is consistent with the shape of the wafer, and the size of the through hole 1222 is larger than the size of the wafer), the bottom edge of the wafer rests on each supporting part 1221, and the heating part 131 of the heating element 13 is arranged corresponding to the through hole 1222. When the wafer needs to be heated, the lifting part 132 moves in the direction close to the through hole 1222, so that the heating part 131 is arranged close to the wafer, which further ensures that the wafer is heated evenly, so that the processing effect of the wafer is further guaranteed.

[0047] In addition, the area of ​​the heating portion 131 is smaller than or equal to the area of ​​the via hole 1222, and the heating area of ​​the heating portion 131 is greater than or equal to the area of ​​the wafer, which further ensures that the wafer in the via hole 1222 is heated evenly, thereby ensuring the quality of the product.

[0048] In addition, the lifting part 132 can be a cylinder, an oil cylinder or a screw-nut pair (the screw is connected to the motor for transmission, and the nut is connected to the heating element 13), etc. The present invention will not further limit the specific structural form of the lifting part 132. Even if the present invention does not make specific limitations, all structures that can achieve lifting of the heating part 131 are deemed to be within the protection scope of the present invention.

[0049] The heating part 131 is an electric heating tube or an electric heating wire, etc. The present invention will not further limit the specific structural form of the heating part 131. Even if the present invention does not make specific limitations, all structures that can achieve the heating function are deemed to be within the protection scope of the present invention.

[0050] Furthermore, the temperature of the heating element 13 is maintained between room temperature and 600° C. Specifically, when the wafer is sputtered, the target material 111 is ionized and gradually deposited on the wafer. By maintaining the temperature of the heating element 13 between room temperature and 600° C., the film support requirements of different target materials can be met, thereby ensuring that the particles of the target material 111 have good activity during film formation, migrate more fully, facilitate orderly crystallization of the film, reduce various defects in the film, reduce the probability of grain boundary scattering and impurity sublimation scattering, and improve the quality of the film.

[0051] Specifically, the distance between the heating element 13 and the various targets 111 is 5 cm to 20 cm. The target 111 is located at the top of the reaction chamber 11, the heating element 13 is located at the bottom of the reaction chamber 11, and the rack 12 is located between the target 111 and the heating element 13. When the wafer is sputtered, the target 111 is ionized to form particles, and the particles are deposited on the surface of the wafer to form a thin film. By setting the distance between the target 111 and the heating element 13 to 5 cm to 20 cm, the distance between the wafer and the target 111 is controlled, thereby ensuring that the target 111 particles can be quickly deposited on the wafer, so that the manufacturing efficiency of the product is further improved.

[0052] It should be understood that the distance between the heating element 13 and the various target materials 111 is 5 cm to 20 cm, that is, the distance between the heating element 13 and the corresponding target material 111 is 5 cm to 20 cm.

[0053] It should be pointed out that, in the present invention, the distance between the heating element 13 and the target material 111 can be 5 cm, 10 cm, 15 cm, 20 cm, etc.

[0054] Furthermore, the reaction pressure of the reaction chamber 11 is 10 -2 Torr~10 -3 Specifically, when the wafer is sputtered, the reaction chamber 11 needs to be in a vacuum state, so as to reduce the adverse effects of air (impurities and active gases in the air) on the sputtering process (such as the occurrence of bad spots), so that the coating quality of the wafer is further improved.

[0055] The reaction pressure of the reaction chamber 11 is set to 10 -2 Torr~10 -3 Torr, further avoiding the adverse effects of air on the wafer sputtering process, so that the coating quality of the wafer is guaranteed.

[0056] It should be understood that in the present invention, the reaction pressure of the reaction chamber 11 is 10 -2 Torr, 10 -1.5 Torr and 10 - 3 Torr et al.

[0057] It should be noted that the sputtering device 100 also includes a vacuum pump component, which includes an air pump, a pressure gauge, a pipeline and a control valve. The air pump is connected to the reaction chamber 11 through a pipeline. The pressure gauge and the control valve are respectively arranged on the pipeline. The control valve and the air pump are opened to realize the vacuum treatment of the reaction chamber 11. When the data displayed by the pressure gauge reaches a preset range, the control valve and the air pump are closed. When the vacuum degree of the reaction chamber 11 is reduced, the control valve and the air pump are opened again to treat the reaction chamber 11.

[0058] In addition, seals are provided at the opening position and the joint position of the reaction chamber 11 to further ensure the vacuum degree in the reaction chamber 11, thereby reducing the influence of air on the sputtering process of the wafer, so that the coating quality of the wafer is further improved.

[0059] Furthermore, if Figure 3 As shown, the reaction unit 10 further includes a barrier structure 14, which is used to isolate adjacent supporting positions 122 from each other. Specifically, the rack 12 is provided with supporting positions 122 that are the same in number as the target materials 111. When one supporting position 122 is provided corresponding to one target material 111, the supporting position 122, the target material 111 and the heating element 13 at this position constitute a sputtering station, and the barrier structure 14 is located on both sides of the sputtering station to isolate the sputtering station in a relatively closed space, thereby avoiding the influence of other materials or components in the reaction chamber 11 on the sputtering station, and further ensuring the coating quality of the wafer.

[0060] It should be pointed out that there are multiple barrier structures 14 , and the barrier structures 14 are used to separate the internal space of the reaction chamber 11 , thereby ensuring that each sputtering station is independent of each other to avoid adverse effects on each other.

[0061] In some embodiments, the barrier structure 14 is a gas curtain formed by an inert gas. Specifically, through holes 121 are respectively opened on both sides of the support position 122 of the rack 12. The two through holes 121 are narrow and long holes and extend toward the center of the rack 12. Both through holes 121 are connected to an inert gas source. When the wafer is sputtered, the inert gas source introduces high-pressure inert gas (argon and / or nitrogen, etc.) into the reaction chamber 11 through the through holes 121, so that a gas curtain structure is formed on both sides of the support position 122, thereby isolating the sputtering station to prevent the sputtering station from being affected, so as to improve the coating quality of the wafer.

[0062] In some embodiments, Figure 3 As shown, the blocking structure 14 is a lifting blocking partition. Specifically, through holes 121 are respectively opened on both sides of the supporting position 122 of the rack 12. The two through holes 121 are narrow and long holes and extend toward the center of the rack 12. Each through hole 121 is correspondingly provided with a blocking partition. When the wafer is sputtered, the blocking partition enters the reaction chamber 11 through the through hole 121, thereby isolating the sputtering station to avoid affecting the sputtering station, thereby improving the coating quality of the wafer.

[0063] It should be pointed out that the blocking partition is raised and lowered by a pneumatic cylinder, an oil cylinder or a motor. Here, the present application will not elaborate on the specific driving method used to raise and lower the blocking partition.

[0064] Furthermore, if Figure 1 or Figure 2 As shown, the sputtering device 100 also includes a pick-up and placement unit 20, which is arranged on the outside of the reaction chamber 11, and the pick-up and placement unit 20 is used to put the wafer into or take it out of the reaction chamber 11. Specifically, the reaction chamber 11 is provided with a pick-up and placement port, and a gate is provided at the pick-up and placement port in an openable and closable manner. The pick-up and placement unit 20 is arranged close to the gate. When the wafer needs to be sputtered, the gate is opened, and the pick-up and placement unit 20 places the wafer on the supporting position 122 inside the reaction chamber 11 through the pick-up and placement port. The pick-up and placement unit 20 is reset, the gate is closed, and the reaction chamber 11 sputters the wafer. After the wafer is sputtered in the reaction chamber 11, the gate is opened, and the pick-up and placement unit 20 takes the wafer out through the pick-up and placement port. By setting the pick-up and placement unit 20, the automatic placement and removal of the wafer is realized, so that the production efficiency of the product is further improved.

[0065] It should be noted that the pick-and-place unit 20 may be a robot arm or an electrostatic chuck, etc.

[0066] Furthermore, if Figure 1 or Figure 2 As shown, there are multiple reaction units 10, and the multiple reaction units 10 are arranged at intervals in the circumferential direction of the pick-and-place unit 20. Specifically, the multiple reaction units 10 are arranged at intervals in the circumferential direction of the pick-and-place unit 20, which facilitates the operation of the pick-and-place unit 20 on each reaction unit 10. In addition, by providing multiple reaction units 10, the processing capacity of the sputtering device 100 can be further improved, so that the production efficiency of the product is further improved.

[0067] In one embodiment of the present invention, Figure 1 As shown, there are three reaction chambers 11, and four target materials 111 can be arranged in each reaction chamber 11. When the target materials 111 required for wafer coating are less than or equal to 4, each reaction chamber 11 can realize the coating process of the wafer, that is, the sputtering device 100 can produce 3 products simultaneously; when the target materials 111 required for wafer coating are greater than 4, four target materials 111 are arranged in one reaction chamber 11, and other target materials 111 are arranged in another reaction chamber 11. A maximum of 12 target materials 111 can be arranged in the three reaction chambers 11, and 12 layers of coating process can be performed on the wafer, thereby effectively improving the processing capacity of the sputtering device 100, reducing the number of reaction chambers 11 to be added, and reducing the cost of the sputtering device 100.

[0068] In another embodiment of the present invention, Figure 2As shown, there are four reaction chambers 11, and four target materials 111 can be arranged in each reaction chamber 11. When the target materials 111 required for wafer coating are less than or equal to 4, each reaction chamber 11 can realize the coating process of the wafer, that is, the sputtering device 100 can produce 4 products simultaneously; when the target materials 111 required for wafer coating are greater than 4, four target materials 111 are arranged in one reaction chamber 11, and other target materials 111 are arranged in another reaction chamber 11. A maximum of 16 target materials 111 can be arranged in the three reaction chambers 11, and 16 layers of coating process can be performed on the wafer, thereby effectively improving the processing capacity of the sputtering device 100, reducing the number of additional reaction chambers 11, and further reducing the cost of the sputtering device 100.

[0069] like Figures 1 to 6 As shown, the present invention also proposes a wafer coating method, which is implemented according to the sputtering device 100 as described above, and the wafer coating method includes:

[0070] S10: placing a wafer on a supporting position 122 of a rack 12 of a reaction chamber 11, so that the wafer is arranged correspondingly to a target material 111. Specifically, the gate of the reaction chamber 11 is opened, and the placement unit 20 places the wafer on the supporting position 122 of the rack 12 through the placement opening of the reaction chamber 11, and the placement unit 20 is reset and the gate is closed.

[0071] S20: Sputtering the wafer. Specifically, the barrier structure 14 is activated to isolate the sputtering station formed by the target 111, the support 122 and the heating element 13. During the sputtering process, the target 111 is ionized and the heating element 13 heats the wafer, and the target 111 particles are deposited on the wafer to form a film.

[0072] S30: After the wafer is sputtered, the rack 12 is driven to rotate so that the wafer is placed corresponding to another target material 111. Specifically, when the wafer needs to be subjected to multi-process coating, the rack 12 is driven to rotate so that the wafer subjected to the initial coating is moved to the next sputtering station composed of the supporting position 122, the target material 111 and the heating element 13.

[0073] S40: performing a sputtering process on the wafer again. Specifically, during the sputtering process of the wafer coated initially, the target material 111 is ionized and the heating element 13 heats the wafer, and the target material 111 particles are deposited on the wafer to form a film again.

[0074] S50: If the type of target material 111 in a reaction chamber 11 can meet the coating requirements of the wafer, repeat steps S30 and S40 until the wafer is sputtered. Specifically, when the type of target material 111 in a reaction chamber 11 can meet the coating requirements of the wafer, the wafer is sputtered in each sputtering station in turn by rotating the rack 12 until all sputtering processes are completed.

[0075] S60: If the type of target material 111 in one reaction chamber 11 cannot meet the coating requirements of the wafer, place the unprocessed wafer on the supporting position 122 of the rack 12 of another reaction chamber 11, so that the unprocessed wafer is set corresponding to a target material 111, and repeat steps S30 and S40. Specifically, when the type of target material 111 in one reaction chamber 11 cannot meet the coating requirements of the wafer, the rack 12 is rotated to make the wafer be sputtered in each sputtering station in turn until all sputtering processes are completed, the gate of the reaction chamber 11 is opened, the placement unit 20 takes out the wafer, and puts it into the supporting position 122 in another reaction chamber 11 through the placement port of another reaction chamber 11, the placement unit 20 is reset, the gate of another reaction chamber 11 is closed, and the other reaction chamber 11 continues to sputter the wafer until the wafer is sputtered.

[0076] The wafer coating method of the present invention arranges a plurality of target materials 111 in a reaction chamber 11, and realizes the corresponding arrangement of the wafer and the different target materials 111 by rotating the rack 12, thereby realizing that the wafer can be subjected to multi-process coating in one reaction chamber 11. The whole process does not require frequent placement and removal of the wafer, thereby improving production efficiency. In addition, the number of reaction chambers 11 is reduced, so that the manufacturing cost of the sputtering device 100 is reduced. In addition, there is no need for the wafer to leave the reaction chamber 11 frequently, thereby avoiding adverse effects of the environment on the wafer manufacturing process (for example, bad spots on the wafer due to dust after leaving the reaction chamber 11, etc.).

[0077] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A sputtering device, characterized in that: The sputtering device comprises a pick-and-place unit and a plurality of reaction units arranged circumferentially and spaced apart around the outer side of the pick-and-place unit, each of the reaction units comprising: A reaction chamber, wherein a plurality of target materials are arranged in the reaction chamber, and the plurality of target materials are arranged at equal intervals along the circumference of the reaction chamber; A rack, wherein at least two supporting positions for placing wafers are provided on the rack, and the rack can rotate in the reaction chamber to drive the supporting positions to be arranged correspondingly to any one of the multiple target materials to complete the coating of the multiple target materials on the wafer; Heating elements, the number of which is consistent with the number of the supporting positions, and the heating elements are arranged corresponding to the supporting positions; The placing and taking unit is used to place the wafer into or take it out of the reaction chamber; The rack has a through hole, a plurality of supporting parts are arranged in the through hole, the plurality of supporting parts are arranged at equal intervals along the circumference of the through hole, and the supporting parts extend toward the center of the through hole, the through hole and the supporting parts constitute the supporting position, and the heating element is arranged corresponding to an end of the through hole away from the target material; The reaction unit further comprises a barrier structure, and the barrier structure is used to isolate adjacent supporting positions from each other; The storage rack is provided with through holes on both sides of the supporting position, the two through holes are narrow and long holes and extend toward the center of the storage rack, and the through holes are used for the barrier structure to pass through; The blocking structure is a lifting and lowering blocking partition.

2. The sputtering device according to claim 1, characterized in that The number of the supporting positions is consistent with the number of the multiple target materials, and the supporting positions are arranged corresponding to the multiple target materials.

3. The sputtering device according to claim 1, characterized in that: The heating element comprises a heating portion and a lifting portion, and the lifting portion is transmission-connected to the heating portion to drive the heating portion to move toward or away from the storage rack.

4. The sputtering device according to claim 1, characterized in that The temperature of the heating element is maintained between room temperature and 600°C; And / or the distance between the heating element and the plurality of target materials is 5 cm to 20 cm.

5. The sputtering device according to claim 1, characterized in that: The reaction pressure in the reaction chamber is 10 -2 Torr~10 -3 Torr.

6. A wafer coating method, the wafer coating method being implemented by the sputtering device according to any one of claims 1 to 5, characterized in that: The wafer coating method comprises: S10: placing the wafer on a supporting position of a rack in a reaction chamber so that the wafer is arranged corresponding to a target material; S20: performing sputtering treatment on the wafer; S30: After the wafer is sputtered, the rack is driven to rotate so that the wafer is placed corresponding to another target material; S40: performing sputtering treatment on the wafer again; S50: If the type of target material in a reaction chamber can meet the coating requirements of the wafer, repeat steps S30 and S40 until the sputtering process of the wafer is completed; S60: If the type of target material in one reaction chamber cannot meet the coating requirements of the wafer, place the unprocessed wafer on the supporting position of the rack of another reaction chamber, so that the unprocessed wafer is set corresponding to a target material in another reaction chamber, and repeat steps S30 and S40 until the wafer is sputtered.

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