Processing apparatus and processing method for a workpiece

Abstract

The application provides a processing device and a processing method of a workpiece. The processing device comprises a heating gas path system. The heating gas path system is used for blowing a heating gas to a cleaning area of the workpiece, the heating gas is used for heating the cleaning area, and a pollution layer of the cleaning area is removed through blowing. In the processing device and the processing method of the workpiece, the heating gas path system can perform heating treatment on the cleaning area of the workpiece, and the pollution layer of the cleaning area is removed through blowing the heating gas. The heating gas can inhibit the pollution source in the gas environment from adhering to the surface of the cleaning area of the workpiece, prevent the pollution layer from regrowing, and thus ensure the processing precision of the processing device.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, and more particularly, to a processing device and a processing method of a workpiece. BACKGROUND

[0002] With the continuous reduction of the size of the semiconductor workpiece, the control requirement of the film layer parameter of the semiconductor workpiece in the manufacturing process is more and more strict. In the semiconductor process, the surface of the semiconductor workpiece will absorb the vapor of water, various process gases and the like, and a pollution layer will be generated on the surface of the film layer. The existence of the pollution layer affects the accuracy of the measurement of the film layer parameter in the semiconductor process, thereby affecting the processing accuracy. At present, the semiconductor workpiece is cleaned first, and then is transferred to the processing device for processing. In the process of transferring the workpiece to the processing device, the pollution layer will grow again, thereby affecting the processing accuracy of the semiconductor process. SUMMARY

[0003] The embodiments of the present application provide a processing device and a processing method of a workpiece.

[0004] The processing device of the embodiments of the present application comprises a heating gas circuit system. The heating gas circuit system is used for blowing a heating gas to a cleaning area of a workpiece, and the heating gas is used for heating the cleaning area and removing the pollution layer of the cleaning area by blowing.

[0005] In some embodiments, the heating gas circuit system comprises a gas source, a heating module and a gas nozzle. The gas source is used for generating an initial gas; the heating module is used for heating the initial gas to form a heating gas; and the gas nozzle is used for blowing the heating gas to the cleaning area of the workpiece.

[0006] In some embodiments, the heating gas circuit system further comprises a filtering module, which is used for filtering the initial gas or the heating gas entering the filtering module; and the gas nozzle is used for blowing the filtered heating gas to the cleaning area of the workpiece.

[0007] In some embodiments, the heating gas circuit system further comprises one or more of a pressure regulating module, a speed regulating module and a temperature regulating module in combination; wherein the pressure regulating module is used for regulating the pressure of the gas entering the pressure regulating module according to the composition and / or thickness of the pollution layer on the workpiece; the speed regulating module is used for regulating the speed of the gas entering the speed regulating module according to the composition and / or thickness of the pollution layer on the workpiece; and the temperature regulating module is used for regulating the temperature of the gas after speed regulation according to the composition and / or thickness of the pollution layer on the workpiece.

[0008] In some embodiments, the processing apparatus further comprises a dirt detection module. The dirt detection module is configured to detect the workpiece to obtain one or both of a composition and a thickness of a contamination layer on the workpiece.

[0009] In some embodiments, the processing apparatus further comprises a purge control unit. The purge control unit is configured to: control the heating gas routing system to continuously purge the heating gas to the workpiece at the area to be cleaned when the thickness of the workpiece is greater than a predetermined threshold; and control the heating gas routing system to pulse the heating gas to the workpiece at the area to be cleaned when the thickness of the workpiece is less than the predetermined threshold.

[0010] In some embodiments, the processing apparatus further comprises a purification module and an air return module. The purification module is configured to supply air to the workpiece inside the processing apparatus, and the air return module is configured to extract air inside the processing apparatus to discharge the purged heating gas outside the processing apparatus.

[0011] In some embodiments, the processing apparatus further comprises a processing system comprising one or both of a processing module and a detection module. The processing module is configured to process the workpiece, and the detection module is configured to detect the workpiece to obtain a parameter to be measured of the workpiece.

[0012] In some embodiments, the outlet of the gas nozzle is configured such that a purging area of the heating gas reaching the surface of the workpiece is greater than or equal to a size of a light spot formed by light emitted by a light source of the detection module in the processing system.

[0013] In some embodiments, the detection module comprises an ellipsometer module. The ellipsometer module comprises a light source, a polarizing component, an analyzing component, and a detecting component. The light source is configured to generate an initial light beam; the polarizing component is configured to adjust a polarization of the initial light beam to form a polarized detection light, the polarized detection light forms a signal light after passing through the workpiece; the analyzing component is configured to adjust a polarization of the signal light to form a polarized signal light; and the detecting component is configured to receive the polarized signal light and obtain a parameter to be measured of the workpiece according to the polarized signal light. The initial light beam is a single-wavelength light or a broadband light.

[0014] The present application also provides a processing method of a workpiece. The processing method comprises purging a heating gas to an area to be cleaned of the workpiece, the heating gas being configured to heat the area to be cleaned and remove a contamination layer of the area to be cleaned by purging.

[0015] In some embodiments, purging the heating gas to the area to be cleaned of the workpiece comprises: heating an initial gas to form the heating gas; and purging the heating gas to the area to be cleaned of the workpiece.

[0016] In some embodiments, the blowing the heating gas to the to-be-cleaned area of the workpiece further comprises one or more of a filtering process, a contamination detection process, a pressure regulating process, a speed regulating process, and a temperature regulating process; the filtering process comprises filtering the initial gas or the heating gas; the contamination detection process comprises obtaining one or more of a composition and a thickness of the contamination layer on the workpiece; the pressure regulating process comprises regulating the pressure of the filtered gas according to the composition and / or the thickness of the contamination layer on the workpiece; the speed regulating process comprises regulating the speed of the pressure-regulated gas according to the composition and / or the thickness of the contamination layer on the workpiece; and the temperature regulating process comprises regulating the temperature of the speed-regulated gas according to the composition and / or the thickness of the contamination layer on the workpiece.

[0017] In some embodiments, the blowing the heating gas to the to-be-cleaned area of the workpiece comprises continuously blowing the heating gas to the to-be-cleaned area of the workpiece when the thickness of the workpiece is greater than a predetermined threshold, and blowing the heating gas to the to-be-cleaned area of the workpiece in a pulse manner when the thickness of the workpiece is less than the predetermined threshold.

[0018] In some embodiments, the processing method further comprises processing the workpiece, and / or detecting the workpiece to obtain a to-be-detected parameter of the workpiece; and the blowing the heating gas to the to-be-cleaned area of the workpiece is performed during the processing and the detecting, and the heating gas is used to heat the to-be-cleaned area and remove a contamination layer of the to-be-cleaned area by blowing.

[0019] In the processing device and the processing method of the workpiece, the heating gas is used to heat the to-be-cleaned area and remove the contamination layer of the to-be-cleaned area by blowing the heating gas; the heating of the to-be-cleaned area can remove the contamination on the surface of the workpiece, and the blowing of the gas to the to-be-cleaned area can make the contamination leave the workpiece, so that the attachment of the pollution source in the gas environment to the surface of the to-be-cleaned area of the workpiece can be inhibited, the re-growth of the contamination layer can be prevented, and the processing precision of the processing device can be ensured; meanwhile, the processing device provided by the technical scheme can blow the to-be-cleaned area by the heating gas circuit system and heat the workpiece by the heating gas at the same time, so that the structure of the device can be simplified, and the heating gas is less likely to cause burns to the workpiece when removing the contamination.

[0020] Additional aspects and advantages of the embodiments will be set forth in part in the description which follows, and in part will become apparent to those skilled in the art upon examination of the following and / or can be learned by practice of the embodiments. BRIEF DESCRIPTION OF DRAWINGS

[0021] The above and / or additional aspects and advantages of the present application will become apparent and be readily appreciated from the following description, taken in conjunction with the accompanying drawings, in which:

[0022] Figure 1 is a structural schematic diagram of a processing device according to some embodiments of the present application;

[0023] Figure 2 is a structural schematic diagram of a heating gas path system of a processing device according to some embodiments of the present application;

[0024] Figure 3 is a structural schematic diagram of an ellipsometer module of a processing device according to some embodiments of the present application;

[0025] Figures 4 to 8 is a flowchart of a processing method of a workpiece according to some embodiments of the present application. DETAILED DESCRIPTION

[0026] The embodiments of the present application will be further described with reference to the drawings. Like or similar components in the drawings are denoted by like or similar reference numerals.

[0027] In addition, the embodiments of the present application described below with reference to the drawings are exemplary only, and are not intended to limit the present application.

[0028] In the present application, unless specifically defined and limited otherwise, the first feature is "on" or "under" the second feature can be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature is "above", "over" and "on top of" the second feature can be that the first feature is directly above or obliquely above the second feature, or only means that the first feature is higher than the second feature in horizontal height. The first feature is "below", "under" and "underneath" the second feature can be that the first feature is directly below or obliquely below the second feature, or only means that the first feature is lower than the second feature in horizontal height.

[0029] Referring to Figure 1 , the present application provides a processing device 1000, which comprises a heating gas path system 100. The heating gas path system 100 is used to blow a heating gas 10 to a to-be-cleaned area 201 of a workpiece 200, the heating gas 10 is used to heat the to-be-cleaned area 201, and the contaminated layer 202 of the to-be-cleaned area 201 is removed by blowing.

[0030] Generally, in the process of making the workpiece 200, a series of contaminants exist in the air, and the surface of the workpiece 200 absorbs vapors such as water, various process gases, and the like, so that a contaminated layer 202 is formed on the surface of the workpiece 200. The contaminated layer 202 is mainly formed by airborne molecular contaminants (AMC) on the surface of the workpiece 200, wherein the AMC mainly exists in the form of gas, vapor and air dust. At present, the method for removing the contaminated layer 202 is to clean the workpiece 200 first, and then transfer the workpiece 200 to the processing equipment 1000 for processing. In the process of transferring the workpiece 200 to the processing equipment 1000, the contaminated layer 202 will regrow, thereby affecting the processing accuracy of the processing equipment 1000.

[0031] Among them, the carrying table 800 in the processing equipment 1000 can be used to carry various workpieces 200 for processing by the processing equipment 1000, wherein the workpiece 200 includes but is not limited to a wafer, a chip, a display panel, a front cover of a mobile phone, a rear cover of a mobile phone, a VR glasses, an AR glasses, a smart watch cover plate, a glass, a lens, a wood, a iron plate, a shell of any device (such as a mobile phone shell) and the like. The workpiece 200 is placed on the carrying table 800 for heating by the gas circuit system 100 and the processing equipment 1000.

[0032] In the processing equipment 1000 and the processing method of the workpiece of the present application, the heating gas 10 is used to heat the to-be-cleaned area 201, and the contaminated layer 202 of the to-be-cleaned area 201 is removed by purging the heating gas 10; by heating the to-be-cleaned area 201, the contaminants on the surface of the workpiece 200 can be removed, and by purging the to-be-cleaned area 201 with the gas, the contaminants can be removed from the workpiece 200, so that the attachment of the pollution source in the gas environment to the surface of the to-be-cleaned area 201 of the workpiece 200 can be inhibited, the regrowth of the contaminated layer 202 can be prevented, and the processing accuracy of the processing equipment 1000 can be ensured; at the same time, the processing equipment 1000 provided by the technical scheme of the present application can heat the workpiece 200 by the heating gas 10 while purging the to-be-cleaned area 201 by the heating gas circuit system 100, so that the equipment structure can be simplified, and the contaminants removed by the heating gas 10 are not easy to cause burns on the workpiece 200.

[0033] Further description will be made below in combination with the drawings.

[0034] Please refer to Figure 2 The heating gas circuit system 100 can include a gas source 20, a heating module 30 and a gas nozzle 40. Among them, the gas source 20 is used to generate an initial gas; the heating module 30 is used to heat the initial gas to form a heating gas 10; and the gas nozzle 40 is used to purge the to-be-cleaned area 201 of the workpiece 200 with the heating gas 10.

[0035] Specifically, in some embodiments, the gas source 20 can internally include a purification unit for initially cleaning the initial gas provided by the gas source 20, so that the initial gas coming out of the gas source 20 is relatively clean, and thus the gas blown on the to-be-cleaned area 201 of the workpiece 200 can effectively remove the pollution layer 202, avoid the blown gas being not clean and thus polluting the to-be-cleaned area 201, and thus ensure the processing accuracy of the processing equipment 1000 (as shown). Figure 1 In one embodiment, the gas source 20 can be an electric air pump, a manual air pump or the like device to provide the initial gas for the heating gas path system 100. Preferably, the initial gas generated by the gas source 20 can be helium, argon or the like inert gas, which can prevent the gas from reacting on the surface of the workpiece 200 and can prevent the surface of the workpiece 200 from being polluted again.

[0036] Please refer to Figure 1 In one embodiment, the heating module 30 can include an air heater to heat the initial gas from an initial temperature to a required gas temperature to form the heated gas 10, so that the heated gas 10 blown on the to-be-cleaned area 201 of the workpiece 200 can remove the pollution layer 202, and thus the processing accuracy of the workpiece 200 can be improved when the processing equipment 1000 processes the workpiece 200. At the same time, the air heater can remove part of the liquid water in the initial gas, so as to avoid the liquid water in the gas blown on the to-be-cleaned area 201 of the workpiece 200 from polluting the workpiece 200.

[0037] Please refer to Figure 1 and Figure 2 In one embodiment, the processing equipment 1000 can further include a pollution detection module 300 for detecting the workpiece 200 and acquiring one or a combination of the composition and thickness of the pollution layer 202 on the workpiece 200. The heating module 30 can adjust the temperature of the initial gas according to the composition and / or thickness of the pollution layer 202 on the workpiece 200, so that the heated gas 10 can effectively remove the pollution layer 202. For example, when the pollution detection module 300 detects that the pollution composition on the workpiece 200 includes water, dust, smoke or the like composition, the control heating module 30 heats the initial gas to 100 degrees or above, so as to ensure that the heated gas 10 blown on the to-be-cleaned area 201 can evaporate the water to separate from the surface of the workpiece 200, and at the same time, the heated gas 10 is blown to remove the pollution composition such as dust, smoke or the like, so as to ensure the processing accuracy of the processing equipment 1000 on the workpiece 200.

[0038] Please refer to Figure 1 and Figure 3The gas nozzle 40 is used to blow the heated gas 10 to the area 201 to be cleaned. Specifically, the outlet of the gas nozzle 40 is configured to make the blowing area of the heated gas 10 reaching the surface of the workpiece 200 larger than or equal to the size of the light spot formed by the light emitted by the light source 70111 of the detection module 701 in the processing device 1000. That is, when the detection module 701 detects the workpiece 200, a light spot will be formed on the surface of the workpiece 200, and the detection range of the detection module 701 is the size of the light spot (the area to be detected). The heated gas 10 blown by the gas nozzle 40 can cover the entire area to be detected, so as to heat the area to be detected (the area 201 to be cleaned) of the workpiece 200 and remove the pollution layer 202 in the area to be detected (the area 201 to be cleaned) by the heated gas 10. At the same time, the gas nozzle 40 keeps blowing the heated gas 10 to the area to be detected during the detection of the area to be detected by the detection module 701, so as to prevent the pollution layer 202 from regrowing and ensure the detection accuracy of the detection module 701. Generally, the current cleaning system cleans the entire workpiece 200 and removes the pollution layer 202 of the workpiece 200, and then processes the cleaned workpiece 200. If the outlet of the gas nozzle 40 is configured to make the heated gas 10 able to blow the entire surface of the workpiece 200 in order to prevent the pollution layer 202 from regrowing during the processing, too much heated gas 10 will be blown to the workpiece 200, which will affect the detection or processing of the surface of the workpiece 200 by the processing device 1000 and affect the processing accuracy of the workpiece 200. The size of the gas nozzle 40 of the present application can ensure that the heated gas 10 can effectively remove the pollution layer 202 in the area to be detected, and control the blowing amount of the heated gas 10, so as to prevent too much heated gas 10 from affecting the processing work of the processing device 1000 and ensure the processing accuracy of the workpiece 200.

[0039] Specifically, the outlet of the gas nozzle 40 is configured to make the blowing area of the heated gas 10 reaching the surface of the workpiece 200 cover the light spot formed by the light emitted by the light source 70111 of the detection module 701 in the processing device 1000.

[0040] Please refer to Figure 1 and Figure 2 In an embodiment, the heating gas circuit system 100 can further include a filtering module 50. The filtering module 50 can include a gas filter. The gas filter is used to filter the initial gas or the heated gas 10 entering the filtering module 50. The gas filter can filter small impurities in the initial gas or the heated gas 10, such as dust, smoke and vapor, smoke floating, etc. with a diameter of 0.003 to 100 microns and 1 to 9 microns, so as to ensure the cleanliness of the heated gas blown to the area 201 to be cleaned and improve the cleaning degree.

[0041] Specifically, the heating module 30 and the filtering module 50 in the heating gas path system 100 can interchange the processing order. For example, the gas source 20 generates the initial gas, the initial gas first enters the heating module 30 for heating treatment to remove the steam in the initial gas to form the heating gas 10, and then the heating gas 10 is sent to the filtering module 50 for filtering treatment to filter the impurities in the heating gas 10. The gas nozzle 40 blows the filtered heating gas 10 to the to-be-cleaned area 201 to heat and remove the pollution layer 202 of the to-be-cleaned area 201. At the same time, during the processing of the to-be-cleaned area 201 by the processing equipment 1000, the heating gas 10 can be blown to the to-be-cleaned area 201 to inhibit the re-growth of the pollution layer 202. After the processing equipment 1000 finishes processing the area, the gas nozzle 40 is moved to other areas of the workpiece 200 for cleaning and processing. For another example, the gas source 20 generates the initial gas, the initial gas first enters the filtering module 50 for filtering treatment to filter the impurities in the initial gas, and then the filtered initial gas is sent to the heating module 30 for heating treatment to remove the steam in the initial gas to form the heating gas 10. The gas nozzle 40 blows the heating gas 10 to the to-be-cleaned area 201 to heat and remove the pollution layer 202 of the to-be-cleaned area 201. At the same time, during the processing of the to-be-cleaned area 201 by the processing equipment 1000, the heating gas 10 can be continuously blown to the to-be-cleaned area 201 to inhibit the re-growth of the pollution layer 202. After the processing equipment 1000 finishes processing the area, the gas nozzle 40 is moved to other areas of the workpiece 200 for cleaning and processing.

[0042] Please refer to Figure 1 and Figure 2 In one embodiment, the heating gas path system 100 can further include one or more of the pressure regulating module 60, the speed regulating module 70, and the temperature regulating module 80 in combination. Among them, the pressure regulating module 60 is used to regulate the pressure of the gas entering the pressure regulating module 60 according to the composition and / or thickness of the pollution layer 202 on the workpiece 200; the speed regulating module 70 is used to regulate the flow speed of the gas entering the speed regulating module 70 according to the composition and / or thickness of the pollution layer 202 on the workpiece 200; and the temperature regulating module 80 is used to regulate the temperature of the gas after speed regulation according to the composition and / or thickness of the pollution layer 202 on the workpiece 200. Specifically, the pressure regulating module 60 can include a pressure regulator for adjusting the pressure of the gas. The speed regulating module 70 can include a valve for adjusting the flow speed of the gas. The temperature regulating module 80 can include an air heater for adjusting the temperature of the gas.

[0043] In one embodiment, the composition and / or thickness of the contamination layer 202 referenced by the pressure regulating module 60, the speed regulating module 70 and the temperature regulating module 80 can be obtained according to the detection result of the contamination detection module 300; in another embodiment, the composition and / or thickness of the contamination layer 202 referenced by the pressure regulating module 60, the speed regulating module 70 and the temperature regulating module 80 can be obtained according to the data provided by other devices. In one example, the heating gas circuit system 100 comprises the gas source 20, the heating module 30, the gas nozzle 40, the filtration module 50 and the pressure regulating module 60. The working process of the heating gas circuit system 100 is as follows: the gas source 20 generates the initial gas, the initial gas first enters the filtration module 50 for filtration treatment to filter the impurities in the initial gas, and then the filtered initial gas is sent to the pressure regulating module 60 and is regulated according to the composition and / or thickness of the contamination layer 202 to ensure the pressure of the gas sent out of the gas nozzle 40, the heating module 30 heats the gas regulated according to the composition and / or thickness of the contamination layer 202 to remove the steam in the initial gas to form the heating gas 10, and the gas nozzle 40 blows the heating gas 10 to the to-be-cleaned area 201 to heat the to-be-cleaned area 201 and remove the contamination layer 202 of the to-be-cleaned area 201. Among them, the pressure regulating treatment needs to be carried out before the heating treatment to prevent the heating gas 10 from being sucked into the surrounding by the pressure regulating module 60 when the heating gas 10 is regulated, which affects the gas flow. In this application, the pressure regulating treatment is carried out first in the heating gas circuit system 100, and then the heating treatment is carried out, which can prevent the heating gas from being sucked into other places of the system, ensure the gas flow, and improve the efficiency of removing the contamination layer 202.

[0044] In another example, the heating gas circuit system 100 comprises the gas source 20, the heating module 30, the gas nozzle 40, the filtration module 50 and the speed regulating module 70. The working process of the heating gas circuit system 100 is as follows: the gas source 20 generates the initial gas, the initial gas first enters the heating module 30 and / or the filtration module 50 for heating and / or filtration treatment to form the heating gas 10, since the flow speed of the gas after the heating treatment will change, the heating gas 10 needs to be regulated according to the composition and / or thickness of the contamination layer 202, the gas nozzle 40 blows the regulated heating gas 10 to the to-be-cleaned area 201 to heat the to-be-cleaned area 201 and remove the contamination layer 202 of the to-be-cleaned area 201, and improve the cleaning efficiency.

[0045] In another example, the heating gas circuit system 100 comprises the gas source 20, the heating module 30, the gas nozzle 40, the filtering module 50, and the temperature adjusting module 80. The working process of the heating gas circuit system 100 is as follows: the gas source 20 generates the initial gas, the initial gas first enters the heating module 30 for heating treatment to remove the steam in the initial gas to form the heating gas 10, and then the heating gas 10 is sent to the filtering module 50 for filtering treatment to filter the impurities in the heating gas 10. Since the temperature of the filtered heating gas 10 may be reduced, in order to ensure the efficiency of removing the pollution layer 202, the heating gas 10 needs to be adjusted in temperature according to the composition and / or thickness of the pollution layer 202 for better removal of the pollution layer 202. The gas nozzle 40 blows the temperature-adjusted heating gas 10 to the to-be-cleaned area 201 to heat the to-be-cleaned area 201 and remove the pollution layer 202 of the to-be-cleaned area 201, and improve the removal efficiency.

[0046] Please continue to refer to Figure 1 and Figure 2 , preferably, the heating gas circuit system 100 comprises the gas source 20, the heating module 30, the gas nozzle 40, the filtering module 50, the pressure adjusting module 60, the speed adjusting module 70, and the temperature adjusting module 80. The working process of the heating gas circuit system 100 is as follows: the gas source 20 generates the initial gas, the initial gas first enters the filtering module 50 for filtering treatment to filter the impurities in the initial gas, and then the filtered initial gas is sent to the pressure adjusting module 60 and adjusted in pressure according to the composition and / or thickness of the pollution layer 202 to ensure the gas flow and speed of the gas sent out of the gas nozzle 40. The heating module 30 heats the pressure-adjusted gas according to the composition and / or thickness of the pollution layer 202 to remove the steam in the initial gas to form the heating gas 10. Since the flow speed of the gas after heating treatment will change, the heating gas 10 needs to be adjusted in speed according to the composition and / or thickness of the pollution layer 202. Since the temperature of the filtered, pressure-adjusted, and speed-adjusted heating gas 10 may be reduced, in order to ensure the efficiency of removing the pollution layer 202, the heating gas 10 needs to be adjusted in temperature according to the composition and / or thickness of the pollution layer 202. The gas nozzle 40 blows the temperature-adjusted heating gas 10 to the to-be-cleaned area 201 to heat the to-be-cleaned area 201 and remove the pollution layer 202 of the to-be-cleaned area 201, and improve the removal efficiency.

[0047] Please refer to Figure 1 In one embodiment, the processing device 1000 can further comprise a blowing control unit 400, which is configured to: when the thickness of the workpiece 200 is greater than a preset threshold, control the heating gas circuit system 100 to continuously blow the heating gas 10 to the to-be-cleaned area 201 of the workpiece 200; and when the thickness of the workpiece 200 is less than the preset threshold, control the heating gas circuit system 100 to blow the heating gas 10 to the to-be-cleaned area 201 of the workpiece 200 in a pulse manner.

[0048] For example, when the preset threshold is 60um and the thickness of the workpiece 200 to be processed is 80um, the thickness of the workpiece 200 is greater than the preset threshold, and the blowing control unit 400 controls the gas nozzle 40 to continuously blow the heated gas 10 to the to-be-cleaned area 201 of the workpiece 200 until the processing equipment 1000 completes the processing, so as to accelerate the cleaning efficiency. When the thickness of the workpiece 200 to be processed is 40um, the thickness of the workpiece 200 is less than the preset threshold 60um, and the blowing control unit 400 controls the gas nozzle 40 to blow the heated gas 10 at the pulse high level time and stop blowing the heated gas 10 at the pulse low level time, wherein the interval of the pulse low level time is less than the generation time of the pollution layer 202, so as to prevent the pollution layer 202 from regrowing and to prevent the continuously blown heated gas 10 from damaging the workpiece 200. In particular, when the thickness of the workpiece 200 to be processed is 60um, the thickness of the workpiece 200 is equal to the preset threshold, and the blowing control unit 400 can control the gas nozzle 40 to continuously blow the heated gas 10 to the to-be-cleaned area 201 of the workpiece 200 until the processing equipment 1000 completes the processing, so as to accelerate the cleaning efficiency. The blowing control unit 400 can control the blowing mode of the heated gas 10 according to the workpiece 200 with different thicknesses, so as to ensure the cleaning efficiency of the pollution layer 202, prevent the surface of the workpiece 200 from being damaged, and ensure the processing accuracy of the processing equipment 1000.

[0049] Please continue to refer to Figure 1 In an embodiment, the processing equipment 1000 can further include a purification module 500 and an air return module 600. The purification module 500 is used to blow air to the workpiece 200 inside the processing equipment 1000, wherein the blowing speed of the purification module 500 is slower than the blowing speed of the gas nozzle 40, and the blowing range is larger, so as to blow the heated gas 10 after the to-be-cleaned area 201 is blown away from the surrounding of the workpiece 200, purify the environment around the workpiece 200, and prevent dust, smoke and the like from polluting the surface of the workpiece 200.

[0050] The air return module 600 is used to extract the gas inside the processing equipment 1000, so as to discharge the heated gas 10 after the to-be-cleaned area 201 is blown away from the outside of the processing equipment 1000, maintain the balance of the air pressure and the stability of the temperature inside the processing equipment 1000. The air return module 600 can also be used in cooperation with the purification module 500, so as to purify the gas environment inside the processing equipment 1000, discharge the blown heated gas 10 from the outside of the processing equipment 1000, and maintain the balance of the air pressure and the stability of the temperature inside the processing equipment 1000.

[0051] Please refer to Figure 1In the embodiments of the present application, the processing device 1000 can further include a processing system 700, which includes one or both of a detection module 701 or a processing module 702 in combination, and the combination relationship is not listed one by one here. The detection module 701 is used for detecting the workpiece 200 to obtain the to-be-measured parameter of the workpiece 200; and the processing module 702 is used for processing the workpiece 200.

[0052] Please refer to Figure 3 In one embodiment, the detection module 701 can include an ellipsometer module 7011, which can include a light source 70111, a polarizing component 70112, an analyzing component 70113, and a detection component 70114. The light source 70111 is used to generate an initial light beam 70115; the polarizing component 70112 is used to adjust the polarization of the initial light beam 70115 to form a polarized signal light 70116; and the detection component 70113 is used to receive the polarized signal light 70116 and obtain the to-be-measured parameter of the workpiece 200 according to the polarized signal light 70116. The initial light beam 70115 is single-wavelength light or wide-wavelength light.

[0053] Specifically, the ellipsometer module 7011 can be used to detect transparent films, film-free solid samples, multi-layer films, absorbing films, and numerous thin films with different properties, different thicknesses, and different absorption levels. The light source 70111 generates an initial light beam 70115 with stable intensity. Since the thickness and refractive index of the film layer 203 of different workpieces 200 are different, the polarizing component 70112 is needed to adjust the polarization state of the initial light beam 70115 to become a polarized signal light 70116, and direct it to the output axis. The analyzing component 70113 receives the polarized signal light 70116 to determine the vibration direction of the polarized signal light 70116, thereby obtaining the thickness parameter of the film layer 203 of the workpiece 200. When the initial light beam 70115 is single-wavelength light, the ellipsometer module 7011 has a simple structure, does not need a monochromator, and can obtain a film layer thickness parameter with high accuracy, and is more sensitive to contaminants. When the initial light beam 70115 is wide-wavelength light, the ellipsometer module 7011 can improve the multi-layer detection capability. At the same time, when measuring a workpiece 200 with a thicker film layer 203, using wide-wavelength light is more conducive to detection. The specific selection of the light beam can be determined according to the properties of the measured workpiece 200 and the thickness of the film layer 203.

[0054] Since the light beam needs to irradiate the to-be-detected area (the to-be-cleaned area 201) to obtain the to-be-detected parameter when the ellipsometer module 7011 detects, if the laser is used to remove the contamination layer 202 in the to-be-detected area (the to-be-cleaned area 201) by laser spot cleaning, the laser for removing the contamination layer 202 will interfere with the light beam of the ellipsometer module 7011, so that the finally obtained to-be-detected parameter has a large deviation, and the detection accuracy of the workpiece 200 is reduced. The heating gas circuit system 100 blows the heating gas 10 to the to-be-cleaned area 201 through the gas nozzle 40, and after the contamination layer 202 is removed, the ellipsometer module 7011 can start to detect the thickness parameter of the film layer 203 in the area, at the same time, the gas nozzle 40 still blows the area during the detection process to ensure the cleanliness of the area, so that the detected thickness parameter of the film layer 203 is more accurate.

[0055] In one embodiment, the processing module 702 can include an etching device which can be used for etching the workpiece 200; the processing module 702 can also include a film coating device which can be used for evaporation, sputtering and the like of the workpiece 200. The processing module 702 can also be of other types, which are not listed here.

[0056] Please refer to Figure 1 and Figure 4 The application also provides a processing method of the workpiece 200, the processing method comprising:

[0057] 01: blowing the heating gas 10 to the to-be-cleaned area 201 of the workpiece 200, the heating gas 10 being used for heating the to-be-cleaned area 201 and removing the contamination layer 202 in the to-be-cleaned area 201 by blowing.

[0058] Specifically, the blowing control unit 400 controls the blowing mode (continuous blowing mode or pulse mode) of the heating gas circuit system 100 according to the workpiece 200 of different thicknesses, so as to blow the heating gas 10 to the to-be-cleaned area 201 of the workpiece 200 of different thicknesses, the heating gas 10 being used for heating the to-be-cleaned area 201 and removing the contamination layer 202 in the to-be-cleaned area 201 by blowing, so as to ensure the processing accuracy of the processing equipment 1000.

[0059] Please refer to Figure 1 and Figure 5 In some embodiments, the method 01 can further comprise:

[0060] 011: heating the initial gas to form the heating gas 10;

[0061] 012: blowing the heating gas 10 to the to-be-cleaned area 201 of the workpiece 200.

[0062] Specifically, the heating module 30 can adjust the temperature of the initial gas according to the composition or thickness of the contamination layer 202 on the workpiece 200, so that the heated gas 10 can effectively remove the contamination layer 202. The gas nozzle 40 blows the heated gas 10 to the to-be-cleaned area 201 of the workpiece 200 to remove the contamination layer 202 of the to-be-cleaned area 201, ensuring the processing accuracy of the processing equipment 1000.

[0063] Referring to Figure 1 and Figure 6 In some embodiments, the method 01 can further include one or more combinations of a filtering process, a contamination detection process, a pressure adjustment process, a speed adjustment process, and a temperature adjustment process.

[0064] 013: The filtering process includes filtering the initial gas or the heated gas 10.

[0065] 014: The contamination detection process includes obtaining one or more combinations of the composition and the thickness of the contamination layer 202 on the workpiece 200.

[0066] 015: The pressure adjustment process includes adjusting the pressure of the filtered gas according to the composition and / or thickness of the contamination layer 202 on the workpiece 200.

[0067] 016: The speed adjustment process includes adjusting the speed of the pressure-adjusted gas according to the composition and / or thickness of the contamination layer 202 on the workpiece 200.

[0068] 017: The temperature adjustment process includes adjusting the temperature of the speed-adjusted gas according to the composition and / or thickness of the contamination layer 202 on the workpiece 200.

[0069] The filtering module 50 is configured to perform the filtering process, the pressure adjustment module 60 is configured to perform the pressure adjustment process, the speed adjustment module 70 is configured to perform the speed adjustment process, and the temperature adjustment module 80 is configured to perform the temperature adjustment process. The combination of various processes corresponds to the processing process of the corresponding module, which will not be described here.

[0070] Referring to Figure 1 and Figure 7 In some embodiments, the method 01 can further include:

[0071] 018: When the thickness of the workpiece 200 is greater than a preset threshold, the to-be-cleaned area 201 of the workpiece 200 is continuously blown with the heated gas 10.

[0072] 019: When the thickness of the workpiece 200 is less than a preset threshold, the to-be-cleaned area 201 of the workpiece 200 is blown with the heated gas 10 in a pulse manner.

[0073] The blowing control unit 400 is configured to: when the thickness of the workpiece 200 is greater than a preset threshold, control the heating gas circuit system 100 to continuously blow the heating gas 10 to the to-be-cleaned area 201 of the workpiece 200; and when the thickness of the workpiece 200 is less than the preset threshold, control the heating gas circuit system 100 to blow the heating gas 10 to the to-be-cleaned area 201 of the workpiece 200 in a pulse mode.

[0074] Referring to Figure 1 and Figure 7 In some embodiments, the processing method can further include:

[0075] 02: processing the workpiece 200; and / or detecting the workpiece 200 to obtain the to-be-detected parameters of the workpiece 200;

[0076] 03: during the processing and detection, blowing the heating gas 10 to the to-be-cleaned area 201 of the workpiece 200, so as to heat the to-be-cleaned area 201 and remove the pollution layer 202 of the to-be-cleaned area 201 by blowing.

[0077] Specifically, when the processing equipment 1000 processes and / or detects the workpiece 200, the heating gas circuit system 100 blows the heating gas 10 to the to-be-cleaned area 201 of the workpiece 200 to remove the pollution layer 202 of the to-be-cleaned area 201 and prevent the pollution layer 202 from regrowing on the surface of the workpiece 200 during the processing or detection, so as to ensure the processing or detection accuracy of the processing equipment 1000.

[0078] In the processing equipment 1000 and the processing method of the workpiece, the heating gas 10 is used to heat the to-be-cleaned area 201 and remove the pollution layer 202 of the to-be-cleaned area 201 by blowing the heating gas 10; heating the to-be-cleaned area 201 can remove the pollutants on the surface of the workpiece 200, and blowing the to-be-cleaned area 201 by the gas can make the pollutants leave the workpiece 200, so as to inhibit the pollution source in the gas environment from adhering to the surface of the to-be-cleaned area 201 of the workpiece 200, prevent the pollution layer 202 from regrowing, and ensure the processing accuracy of the processing equipment 1000; meanwhile, the processing equipment 1000 provided in the technical scheme can blow the to-be-cleaned area 201 by the heating gas circuit system 100 and heat the workpiece 200 by the heating gas 10 at the same time, so as to simplify the structure of the equipment, and the pollutants removed by the heating gas 10 are not easy to cause burns on the workpiece 200. Meanwhile, the processing of each module in the heating gas circuit system 100 can improve the cleaning efficiency of the to-be-cleaned area 201, so as to improve the processing efficiency of the processing equipment 1000.

[0079] In the description of the application, the description of the terms "certain embodiments", "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example" or "some examples" means that the particular feature, structure, material or characteristic being described is included in at least one embodiment or example of the application. The illustrative appearance of the above terms in various places in the description are not necessarily intended to refer to the same embodiment or example. Moreover, the particular features, structures, materials or characteristics can be combined in any suitable manner in one or more embodiments or examples.

[0080] Furthermore, the terms "first", "second" or the like are used merely to describe corresponding features, and do not imply or connote relative importance or a quantity of the specified technical features. Thus, a feature defined with "first", "second" can include at least one of the features explicitly or implicitly. In the description of the application, the meaning of "plurality" is at least two, for example two, three, unless otherwise explicitly specified.

[0081] Although the embodiments of the application have been shown and described above, it is to be understood that the above-described embodiments are merely exemplary, and are not to be taken as limiting the present application. Within the scope of the present application, various changes, modifications, substitutions and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present application, which are defined by the claims and their equivalents.

Claims

1. A processing device, characterized by, The processing system comprises a detection module for detecting a workpiece and obtaining a to-be-detected parameter of the workpiece. The detection module comprises an ellipsometer module. The ellipsometer module is used for detecting at least one of a transparent film, a film-free solid sample, a multilayer film, and an absorbing film. The ellipsometer module comprises: a light source for generating an initial light beam; a polarizing component for adjusting the polarization of the initial light beam to form polarized detection light, which forms signal light after passing through the workpiece; a detecting component for adjusting the polarization of the signal light to form polarized signal light; a detecting component for receiving the polarized signal light and obtaining the to-be-detected parameter of the workpiece according to the polarized signal light; The initial light beam is single-wavelength light or wide-spectrum light. The processing device further comprises: a heating gas circuit system for blowing a heating gas to a to-be-cleaned area of the workpiece, the heating gas being used for heating the to-be-cleaned area and removing a pollution layer of the to-be-cleaned area by blowing; The heating gas circuit system comprises: a gas nozzle for blowing the heating gas to the to-be-cleaned area of the workpiece; The outlet of the gas nozzle is configured to make the blowing area of the heating gas reaching the surface of the workpiece greater than or equal to the size of the light spot formed by the light emitted by the light source of the detection module in the processing system; The processing device further comprises a blowing control unit for: controlling the heating gas circuit system to continuously blow the heating gas to the to-be-cleaned area of the workpiece when the thickness of the workpiece is greater than a predetermined threshold; controlling the heating gas circuit system to blow the heating gas to the to-be-cleaned area of the workpiece in a pulse manner when the thickness of the workpiece is less than the predetermined threshold; In the detection process, the gas nozzle is used for blowing the heating gas to the to-be-cleaned area of the workpiece, the heating gas being used for heating the to-be-cleaned area and removing a pollution layer of the to-be-cleaned area by blowing.

2. The processing device of claim 1, wherein, The heating gas circuit system comprises: a gas source for generating an initial gas; a heating module for heating the initial gas to form a heating gas.

3. The processing device of claim 2, wherein, The heating gas circuit system further comprises a filtering module for filtering the initial gas or the heating gas entering the filtering module; and the gas nozzle is used for blowing the filtered heating gas to the to-be-cleaned area of the workpiece.

4. The processing device of claim 3, wherein, The heating gas circuit system further comprises one or more of a pressure regulating module, a speed regulating module, and a temperature regulating module in combination; wherein: The pressure regulating module is used for regulating the pressure of the gas entering the pressure regulating module according to the composition and / or thickness of the pollution layer on the workpiece; The speed regulating module is used for regulating the speed of the gas entering the speed regulating module according to the composition and / or thickness of the pollution layer on the workpiece; The temperature regulating module is used for regulating the temperature of the gas after speed regulation according to the composition and / or thickness of the pollution layer on the workpiece.

5. The processing device of claim 4, wherein, Further comprising: a dirt detection module for detecting the workpiece to obtain one or both of the composition and thickness of the pollution layer on the workpiece.

6. The processing device of claim 1, wherein, The processing system further comprises a purifying module and a return air module, the purifying module is configured to supply air to the workpiece in the processing device, and the return air module is configured to extract air in the processing device to discharge the purged heated gas outside the processing device.

7. The processing device of claim 1, wherein, The processing system further comprises a processing module configured to process the workpiece.

8. A method of processing a workpiece, characterized by, The processing system comprises: purging a to-be-cleaned area of the workpiece with heated gas, the heated gas being used to heat the to-be-cleaned area and remove a contamination layer of the to-be-cleaned area by purging; The purging a to-be-cleaned area of the workpiece with heated gas comprises: when the thickness of the workpiece is greater than a predetermined threshold, continuously purging the to-be-cleaned area of the workpiece with the heated gas; when the thickness of the workpiece is less than the predetermined threshold, purging the to-be-cleaned area of the workpiece with the heated gas in a pulse manner. The processing method further comprises: detecting the workpiece to obtain a to-be-detected parameter of the workpiece; controlling a purging area of the heated gas reaching the surface of the workpiece to be greater than or equal to a size of a light spot formed by light emitted by a light source for detecting the workpiece; during the detecting, purging a to-be-cleaned area of the workpiece with heated gas, the heated gas being used to heat the to-be-cleaned area and remove a contamination layer of the to-be-cleaned area by purging.

9. The treatment method according to claim 8, characterized in that, The purging a to-be-cleaned area of the workpiece with heated gas comprises: heating initial gas to form heated gas; and purging the to-be-cleaned area of the workpiece with the heated gas.

10. The treatment method according to claim 9, characterized in that, The purging a to-be-cleaned area of the workpiece with heated gas further comprises one or more combinations of filtering processing, dirt detection processing, pressure adjustment processing, speed adjustment processing, and temperature adjustment processing, wherein: The filtering processing comprises filtering the initial gas or the heated gas; The dirt detection processing comprises obtaining one or both of a composition and a thickness of a contamination layer on the workpiece in combination; The pressure adjustment processing comprises adjusting the pressure of the filtered gas according to the composition and / or the thickness of the contamination layer on the workpiece; The speed adjustment processing comprises adjusting the speed of the pressure-adjusted gas according to the composition and / or the thickness of the contamination layer on the workpiece; The temperature adjustment processing comprises adjusting the temperature of the speed-adjusted gas according to the composition and / or the thickness of the contamination layer on the workpiece.

11. The treatment method of claim 8, wherein, The purging a to-be-cleaned area of the workpiece with heated gas comprises: when the thickness of the workpiece is greater than a predetermined threshold, continuously purging the to-be-cleaned area of the workpiece with the heated gas; when the thickness of the workpiece is less than the predetermined threshold, purging the to-be-cleaned area of the workpiece with the heated gas in a pulse manner.

12. The processing method of claim 8, wherein, The processing system further comprises: processing the workpiece; during the processing, purging a to-be-cleaned area of the workpiece with heated gas, the heated gas being used to heat the to-be-cleaned area and remove a contamination layer of the to-be-cleaned area by purging.

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