Reverse design method, device, equipment and medium for ultra-wideband transparent absorber

Abstract

The present application relates to a reverse design method, device, equipment and medium for an ultra-wideband transparent absorber, the method comprising: obtaining the design requirements of the transparent absorber, the design requirements including the structural type, frequency band range and wave absorption rate of the periodic lossy surface; performing periodic lossy surface analysis and impedance extraction according to the structural type, and establishing a mapping rule between the structural parameters of the structural type and the equivalent circuit parameters; establishing an objective function according to the frequency band range and wave absorption rate, selecting the absorber material and the equivalent circuit model, and determining the parameter range of the equivalent circuit model; using circuit simulation software to iteratively optimize the equivalent circuit model, fitting the objective function, and obtaining the design parameters of the equivalent circuit model; according to the mapping rule and the design parameters, inverting the structural parameters corresponding to the design parameters; according to the structural type and the structural parameters, obtaining an ultra-wideband transparent absorber that meets the frequency band range and wave absorption rate. The present method can be used to design an ultra-wideband absorber.

Description

Technical Field

[0001] The present application relates to the field of electromagnetic stealth technology, and in particular to a reverse design method, device, equipment and medium for an ultra-wideband transparent absorber. Background Art

[0002] Application scenarios such as military aircraft cockpits, ground vehicle facilities, air defense facilities, and civilian anti-electromagnetic radiation glass windows require broadband absorbers that are transparent to visible light.

[0003] At present, the design approach for transparent absorbers is forward thinking, that is, designing a structure and then optimizing it, and using the equivalent circuit method to analyze the impedance matching of the structure.

[0004] The disadvantages of this design are: the determined structure has limited the optimization scope, the bandwidth cannot be effectively expanded due to the constraints of transparent materials, the bandwidth performance cannot be maximized, and it is difficult to break through the limitations of bandwidth and transmittance; there is also the disadvantage of first having structure and then having performance, and it is impossible to get the corresponding structure according to engineering indicators. Multiple attempts are required, and the design process is cumbersome and time-consuming; and the fine grid division in the full-wave simulation software leads to huge calculation amount, time-consuming and labor-intensive, and very low efficiency. Summary of the invention

[0005] Based on this, it is necessary to provide a reverse design method, device, equipment and medium for an ultra-wideband transparent absorber in response to the above-mentioned technical problems, so as to design an ultra-wideband absorber.

[0006] A reverse design method for an ultra-wideband transparent absorber, comprising:

[0007] Obtaining design requirements for a transparent absorber, wherein the design requirements include a structure type, a frequency band range, and an absorptivity of a periodic lossy surface;

[0008] According to the structure type, periodic lossy surface analysis and impedance extraction are performed to establish a mapping rule between the structure parameters of the structure type and the equivalent circuit parameters;

[0009] Establishing an objective function according to the frequency band range and the wave absorption rate, selecting an absorber material and an equivalent circuit model, and determining a parameter range of the equivalent circuit model; iteratively optimizing the equivalent circuit model using circuit simulation software, fitting the objective function, and obtaining design parameters of the equivalent circuit model;

[0010] According to the mapping rule and the design parameters, inversely derive the structural parameters corresponding to the design parameters;

[0011] According to the structure type and the structure parameters, an ultra-wideband transparent absorber satisfying the frequency band range and the wave absorption rate is obtained.

[0012] In one embodiment, performing periodic lossy surface analysis and impedance extraction according to the structure type, and establishing a mapping rule between the structure parameters of the structure type and the equivalent circuit parameters includes:

[0013] According to the structure type, a periodic lossy surface analysis is performed to obtain structural parameters that affect the equivalent circuit;

[0014] Full-wave simulation software is used to extract impedance, establish a mapping relationship between the structural parameters and equivalent impedance, and establish a mapping rule between the structural parameters and equivalent circuit parameters.

[0015] In one embodiment, the mapping rules between the structural parameters of the structural type and the equivalent circuit parameters include:

[0016]

[0017] Where C is the capacitance of the equivalent circuit, ε e is the equivalent dielectric constant coefficient, C0 is the extracted capacitance, ε r1 is the dielectric constant of the dielectric layer on one side of the patch, ε r2 is the dielectric constant of the dielectric layer on the other side of the patch.

[0018] In one embodiment, establishing an objective function according to the frequency band range and the wave absorption rate, and selecting the absorber material and the equivalent circuit model comprises:

[0019] The absorber material includes: loss layer material and dielectric layer material;

[0020] The equivalent circuit model includes: the material of the lossy layer, the number of lossy layers, and the impedance structure of the lossy surface.

[0021] In one embodiment, determining the parameter range of the equivalent circuit model includes:

[0022] Relative dielectric constant ε of the dielectric layer r The range is set to 1≤ε r ≤9, the range of equivalent capacitance level fF is set to 1fF≤C≤1500fF, and the range of equivalent inductance level nH is set to 0nH≤L≤10nH.

[0023] In one embodiment, the design parameters include: impedance parameters of each lossy layer, thickness of the lossy layer, and dielectric constant of the dielectric layer.

[0024] In one of the embodiments, the lossy layer material is a highly transparent and highly transmittance conductive film with controllable square resistance and capable of being processed into a pattern, and the dielectric layer material is a highly transparent and highly transmittance glass-like material.

[0025] A reverse design device for an ultra-wideband transparent absorber, comprising:

[0026] An acquisition module, used to acquire design requirements of a transparent absorber, wherein the design requirements include a structure type, a frequency band range, and an absorptivity of a periodic lossy surface;

[0027] An extraction module, used to perform periodic lossy surface analysis and impedance extraction according to the structure type, and establish a mapping rule between the structure parameters of the structure type and the equivalent circuit parameters;

[0028] An analysis module is used to establish an objective function according to the frequency band range and the wave absorption rate, select an absorber material and an equivalent circuit model, and determine a parameter range of the equivalent circuit model; iteratively optimize the equivalent circuit model using circuit simulation software, fit the objective function, and obtain design parameters of the equivalent circuit model;

[0029] An inversion module, used for inverting the structural parameters corresponding to the design parameters according to the mapping rule and the design parameters;

[0030] The output module is used to obtain an ultra-wideband transparent absorber that meets the frequency band range and absorption rate according to the structure type and the structure parameters.

[0031] A computer device comprises a memory and a processor, wherein the memory stores a computer program, and when the processor executes the computer program, the following steps are implemented:

[0032] Obtaining design requirements for a transparent absorber, wherein the design requirements include a structure type, a frequency band range, and an absorptivity of a periodic lossy surface;

[0033] According to the structure type, periodic lossy surface analysis and impedance extraction are performed to establish a mapping rule between the structure parameters of the structure type and the equivalent circuit parameters;

[0034] Establishing an objective function according to the frequency band range and the wave absorption rate, selecting an absorber material and an equivalent circuit model, and determining a parameter range of the equivalent circuit model; iteratively optimizing the equivalent circuit model using circuit simulation software, fitting the objective function, and obtaining design parameters of the equivalent circuit model;

[0035] According to the mapping rule and the design parameters, inversely derive the structural parameters corresponding to the design parameters;

[0036] According to the structure type and the structure parameters, an ultra-wideband transparent absorber satisfying the frequency band range and the wave absorption rate is obtained.

[0037] A computer-readable storage medium stores a computer program, which, when executed by a processor, implements the following steps:

[0038] Obtaining design requirements for a transparent absorber, wherein the design requirements include a structure type, a frequency band range, and an absorptivity of a periodic lossy surface;

[0039] According to the structure type, periodic lossy surface analysis and impedance extraction are performed to establish a mapping rule between the structure parameters of the structure type and the equivalent circuit parameters;

[0040] Establishing an objective function according to the frequency band range and the wave absorption rate, selecting an absorber material and an equivalent circuit model, and determining a parameter range of the equivalent circuit model; iteratively optimizing the equivalent circuit model using circuit simulation software, fitting the objective function, and obtaining design parameters of the equivalent circuit model;

[0041] According to the mapping rule and the design parameters, inversely derive the structural parameters corresponding to the design parameters;

[0042] According to the structure type and the structure parameters, an ultra-wideband transparent absorber satisfying the frequency band range and the wave absorption rate is obtained.

[0043] The above-mentioned reverse design method, device, equipment and medium of ultra-wideband transparent absorber first establishes the mapping law between structural parameters and equivalent circuit parameters according to the structural type, then establishes the objective function and selects the equivalent circuit model, uses simulation software to optimize and fit the equivalent circuit model, obtains the design parameters that meet the parameter range, and then uses the mapping law to obtain the structural parameters corresponding to the design parameters, so as to obtain the absorber that meets the requirements. The above-mentioned method adopts reverse thinking, and proposes a design method of transparent absorber based on equivalent circuit under the condition of satisfying the light transmission property. Since the structural parameters are obtained by inversion, it breaks through the limitations of the structure and materials determined in the prior art, can improve the bandwidth performance, and meet the design requirements of ultra-wideband; at the same time, it is not that the structure comes first and then the performance, so the corresponding structure can be obtained according to the engineering indicators, without multiple attempts but a successful design at one time, avoiding the waste of resources, accurate and convenient, and extremely efficient. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 1 is a flow chart of a reverse design method of an ultra-wideband transparent absorber in one embodiment;

[0045] Figure 2 A schematic diagram of a structural type in one embodiment;

[0046] Figure 3 is a schematic diagram of an S11 curve after iterative optimization in one embodiment;

[0047] Figure 4 is a schematic diagram of a wave absorbing body designed in one embodiment;

[0048] Figure 5 A schematic diagram showing the comparison between circuit simulation and full-wave simulation in one embodiment;

[0049] Figure 6 is a schematic diagram of the wave absorption rate of a structure in one embodiment;

[0050] Figure 7 is a structural block diagram of a reverse design device for an ultra-wideband transparent absorber in one embodiment;

[0051] Figure 8 FIG. 4 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0052] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0053] like Figure 1 As shown, the present application provides a reverse design method for an ultra-wideband transparent absorber, which, in one embodiment, comprises the following steps:

[0054] Step 102, obtaining design requirements of the transparent absorber, the design requirements including the structure type, frequency band range and absorption rate of the periodic lossy surface.

[0055] Transparent absorbers, also known as absorbing invisible materials, are periodic structures with lossy characteristics that can absorb electromagnetic waves, convert electromagnetic energy into heat energy, and reduce the energy of reflected electromagnetic waves.

[0056] The structural types include: square, cross, square ring, circular ring, Jerusalem cross and other shapes, which are generally regular symmetrical structures, that is, periodic unit structures. The absorber is made of patches of the above shapes.

[0057] Step 104: Perform periodic lossy surface analysis and impedance extraction according to the structure type, and establish a mapping rule between the structure parameters of the structure type and the equivalent circuit parameters.

[0058] Specifically, according to the structure type, a periodic lossy surface analysis is performed to obtain the structural parameters that affect the equivalent circuit; impedance extraction is performed using full-wave simulation software to establish a mapping relationship between the structural parameters and the equivalent impedance, and a mapping rule between the structural parameters and the equivalent circuit parameters is established.

[0059] The full-wave simulation software may adopt existing technology, such as CST software.

[0060] It should be noted that the periodic lossy surface of the structure will produce equivalent impedance under electromagnetic wave irradiation, and the equivalent impedance can be extracted by full-wave simulation software; the influence of each structural parameter on each equivalent circuit parameter, that is, the mapping law between them, can be obtained by parameter scanning. How to obtain the mapping law by parameter scanning belongs to the prior art and will not be described here.

[0061] For example: In the CST software, the Z matrix is ​​obtained by calculating the S parameters, where Z11 is the extracted equivalent impedance.

[0062] The mapping rules include: the relationship between the structural parameters and the equivalent resistance, the relationship between the structural parameters and the equivalent capacitance, the relationship between the structural parameters and the equivalent inductance, and the composition relationship among the three. Among them, the composition relationship among the three refers to: the connection relationship between two or three elements among the resistor, capacitor and inductor, and the specific connection relationship includes series connection, parallel connection or series-parallel compatible connection.

[0063] The relationship between the structural parameters and the equivalent resistance is: the ratio of the square resistance of the structure to the equivalent resistance is fixed, showing an approximately inverse relationship.

[0064] In addition, after obtaining the relationship between the structural parameters and the equivalent capacitance through parameter scanning, it can also be corrected by the following formula:

[0065]

[0066] Where C is the capacitance of the equivalent circuit, ε e is the equivalent dielectric constant coefficient, C0 is the extracted capacitance (obtained by parameter scanning), ε r1 is the dielectric constant of the dielectric layer on one side of the patch, ε r2 is the dielectric constant of the dielectric layer on the other side of the patch.

[0067] Step 106, establish an objective function according to the frequency band range and the absorbance, select the absorber material and the equivalent circuit model, and determine the parameter range of the equivalent circuit model; use circuit simulation software to iteratively optimize the equivalent circuit model, fit the objective function, and obtain the design parameters of the equivalent circuit model.

[0068] The objective function is established based on the frequency band information and the absorbency information contained in the design requirements, and is a set of objectives that the designed absorber structure needs to achieve.

[0069] The absorber material includes: lossy layer material and dielectric layer material. The lossy layer material is a highly transparent and highly transmittance conductive film with controllable square resistance and can be processed into patterns. The dielectric layer material is a highly transparent and highly transmittance glass-like material. The selection of the lossy layer and dielectric layer materials can ensure the high transparency of the absorber, thereby satisfying the light transmission property and optimizing and improving the light transmittance.

[0070] For example, the loss layer can be made of indium tin oxide (ITO), krypton-doped tin oxide (FTO), micro-nano metal grid structure, graphene, etc., and the dielectric layer can be made of polymethyl methacrylate PMMA, polycarbonate PC, quartz glass, etc.

[0071] Preferably, the loss layer is a square resistive film with a thickness of nanometer level, which can break through the limit of light transmittance and further optimize and improve the light transmittance.

[0072] Note: The choice of absorber material requires the dielectric constant to be consistent with the circuit simulation results.

[0073] The equivalent circuit model includes: the material of the loss layer, the number of loss layers and the impedance structure of the loss surface, which can be designed according to actual engineering needs and actual application scenarios, that is: select materials with anti-collision performance, high temperature resistance, corrosion resistance or similar properties according to the limitations of physical or chemical properties. In this way, the thickness, transmittance and number of loss layers of the absorbing structure can be determined. Specifically, the number of loss layers can be one or more, and the impedance structure of the loss surface can be series, parallel or compatible with series and parallel. Preferably, while meeting the absorbing performance, the number of loss layers is as small as possible to optimize and improve the transmittance.

[0074] The parameter range of the equivalent circuit model includes: relative dielectric constant ε of the dielectric layer r The range is set to 1≤ε r ≤9, the range of equivalent capacitance level fF is set to 1fF≤C≤1500fF, and the range of equivalent inductance level nH is set to 0nH≤L≤10nH.

[0075] It should be noted that if the gap between the optimization result (i.e., design parameters) and the objective function is still large within a given parameter range, the circuit model can be adjusted.

[0076] Circuit simulation software can use existing technologies, such as the optimization algorithm provided by ADS.

[0077] The design parameters include: impedance parameters of each lossy layer (including: equivalent resistance, equivalent capacitance and equivalent inductance), thickness of the lossy layer and dielectric constant of the dielectric layer.

[0078] Step 108: Inversely calculate the structural parameters corresponding to the design parameters according to the mapping rules and the design parameters.

[0079] That is to say, according to the aforementioned mapping rules and the optimized design parameters, the structure can be inverted, that is, the structure can be inverted through impedance.

[0080] Step 110, obtaining an ultra-wideband transparent absorber that meets the frequency band range and absorption rate according to the structure type and structure parameters.

[0081] In this embodiment, a reverse design method based on an equivalent circuit is proposed, in which the structural parameters are inverted according to the electrical parameters (i.e., design parameters) obtained by optimizing the circuit (i.e., the equivalent circuit model), so as to achieve the purpose of reversely designing an ultra-wideband transparent absorber. Compared with the existing design methods, the performance designed by this method is targeted, the design steps can be simplified, and the corresponding products can be designed quickly and efficiently according to the indicators.

[0082] It should be understood that although Figure 1 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 1 At least part of the steps may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least part of the sub-steps or stages of other steps.

[0083] In a specific embodiment, the reverse design thinking of the present method is used to quickly design a four-layer ITO resistor film periodic structure to achieve an ultra-wideband transparent absorber with an absorption rate of more than 90% in the 2-18 GHz frequency band.

[0084] The structural type is: four-layer ITO resistor film periodic structure, the frequency band range is: 2-18GHz, and the wave absorption rate is: more than 90%.

[0085] like Figure 2 As shown, each layer of periodic structure is designed using the periodic square patch unit of the simplest ITO resistor film. Through analysis, the square patch unit has only three structural parameters: period p, side length d, and square resistance; the inductance in the example is very small and can be ignored, so the relationship between the structural parameters and the equivalent inductance is omitted here; through the extraction and analysis of the impedance surface, the influence of these three parameters on the equivalent resistance and equivalent capacitance can be studied (the specific influence rules can be obtained by parameter scanning with full-wave simulation software, which will not be repeated here).

[0086] The reflection coefficient in the range of 2-18GHz is less than -10dB as the objective function.

[0087] In the process of selecting the equivalent circuit model, a series RC circuit is used as the loss layer, and three loss layers and one ground layer are designed. In order to meet the transparent requirements, the ground layer here is not an ideal metal, but a square resistance film.

[0088] The parameter range of the equivalent circuit model is: relative dielectric constant ε of the dielectric layer r The range is set to 1≤ε r ≤9, the range of equivalent capacitance level fF is set to 1fF≤C≤1500fF, and the range of equivalent inductance level nH is set to 0nH≤L≤10nH.

[0089] After iterative optimization, the design parameters obtained are: among the impedance parameters of each lossy layer, the equivalent resistance is 30-200 ohms, the equivalent capacitance is 10-770fF, the total thickness of the circuit structure is 13.1mm (that is, the total thickness of the lossy layer and the dielectric layer), and the dielectric constant of the dielectric layer is 2.25, all of which are within the designed parameter range.

[0090] like Figure 3 The optimized S11 curve shown can achieve the design target of -10dB reflectivity in the range of 2-18GHz.

[0091] According to the aforementioned impedance law (i.e. the influence of the three parameters on resistance and capacitance), the size parameters of each layer of square patches are inverted. It should be noted that the coefficient, i.e. the equivalent dielectric constant, should be considered here.

[0092] like Figure 4 In the structure shown, the loss layer is made of ITO and the dielectric layer is made of transparent organic glass PMMA.

[0093] like Figure 5 The circuit simulation results are compared with the full-wave simulation results. The final designed structural effect is consistent with the circuit optimization, and the 90% absorption rate covers 2-18GHz, meeting the requirements of the objective function.

[0094] like Figure 6 The schematic diagram of the structural absorption rate shown meets the requirement of more than 90% absorption rate in the range of 2-18GHz.

[0095] It should be noted that this example analyzes the equivalent impedance law of the square patch. In addition, the equivalent impedance of other structures can also be extracted and analyzed according to this method to achieve the inversion effect. Moreover, even if only the law of the square patch is analyzed, it is not enough to infer only one absorbing structure. Different circuit models can be designed according to the objective function to achieve the final effect. In other words, this method is universal. Due to the differences in the simulation process and the iterative optimization process, a variety of different structures can be inferred according to the index requirements. As long as the goal is achieved, it has engineering application value.

[0096] In one embodiment, Figure 7 As shown, a reverse design device for an ultra-wideband transparent absorber is provided, comprising: an acquisition module 702, an extraction module 704, an analysis module 706, an inversion module 708 and an output module 710, wherein:

[0097] An acquisition module 702 is used to acquire design requirements of a transparent absorber, wherein the design requirements include a structure type, a frequency band range, and an absorption rate of a periodic lossy surface;

[0098] An extraction module 704, configured to perform periodic lossy surface analysis and impedance extraction according to the structure type, and establish a mapping rule between the structure parameters of the structure type and the equivalent circuit parameters;

[0099] The analysis module 706 is used to establish an objective function according to the frequency band range and the wave absorption rate, select the absorber material and the equivalent circuit model, and determine the parameter range of the equivalent circuit model; use circuit simulation software to iteratively optimize the equivalent circuit model, fit the objective function, and obtain the design parameters of the equivalent circuit model;

[0100] An inversion module 708, configured to invert the structural parameters corresponding to the design parameters according to the mapping rule and the design parameters;

[0101] The output module 710 is used to obtain an ultra-wideband transparent absorber that meets the frequency band range and absorption rate according to the structure type and the structure parameters.

[0102] In one embodiment, the extraction module 704 is further used to perform periodic lossy surface analysis and impedance extraction according to the structure type, and establish a mapping rule between the structure parameters of the structure type and the equivalent circuit parameters, including:

[0103] According to the structure type, a periodic lossy surface analysis is performed to obtain structural parameters that affect the equivalent circuit;

[0104] Full-wave simulation software is used to extract impedance, establish a mapping relationship between the structural parameters and equivalent impedance, and establish a mapping rule between the structural parameters and equivalent circuit parameters.

[0105] In one embodiment, the extraction module 704 is also used for mapping rules between the structural parameters of the structural type and the equivalent circuit parameters, including:

[0106]

[0107] Where C is the capacitance of the equivalent circuit, ε e is the equivalent dielectric constant coefficient, C0 is the extracted capacitance, ε r1 is the dielectric constant of the dielectric layer on one side of the patch, ε r2 is the dielectric constant of the dielectric layer on the other side of the patch.

[0108] In one embodiment, the analysis module 706 is further configured to establish an objective function according to the frequency band range and the wave absorption rate, and the selection of the wave absorbing body material and the equivalent circuit model includes:

[0109] The absorber material includes: loss layer material and dielectric layer material;

[0110] The equivalent circuit model includes: the material of the lossy layer, the number of lossy layers, and the impedance structure of the lossy surface.

[0111] In one embodiment, the analysis module 706 is further configured to determine that the parameter range of the equivalent circuit model includes:

[0112] Relative dielectric constant ε of the dielectric layer r The range is set to 1≤ε r ≤9, the range of equivalent capacitance level fF is set to 1fF≤C≤1500fF, and the range of equivalent inductance level nH is set to 0nH≤L≤10nH.

[0113] In one embodiment, the analysis module 706 is also used for the design parameters including: impedance parameters of each lossy layer, thickness of the lossy layer, and dielectric constant of the dielectric layer.

[0114] In one embodiment, the output module 710 is also used for the lossy layer material to be a highly transparent and highly transmittance conductive film with controllable square resistance and capable of being processed into a pattern, and the dielectric layer material to be a highly transparent and highly transmittance glass-like material.

[0115] The specific definition of the reverse design device of the ultra-wideband transparent absorber can be found in the definition of the reverse design method of the ultra-wideband transparent absorber mentioned above, which will not be repeated here. Each module in the above device can be implemented in whole or in part by software, hardware and a combination thereof. Each of the above modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory of the computer device in the form of software, so that the processor can call and execute the operations corresponding to each of the above modules.

[0116] In one embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as follows: Figure 8 As shown. The computer device includes a processor, a memory, a network interface, a display screen and an input device connected through a system bus. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The network interface of the computer device is used to communicate with an external terminal through a network connection. When the computer program is executed by the processor, a reverse design method for an ultra-wideband transparent absorber is implemented. The display screen of the computer device can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covered on the display screen, or a button, trackball or touchpad set on the computer device housing, or an external keyboard, touchpad or mouse. The computer device can be a simulation device, the input device inputs relevant information to the simulation device, the processor executes the program in the memory to perform combined simulation, and the display screen displays relevant simulation results.

[0117] Those skilled in the art will understand that Figure 8 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0118] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the method in the above embodiment when executing the computer program.

[0119] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the steps of the method in the above embodiment are implemented.

[0120] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).

[0121] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0122] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A reverse design method for an ultra-wideband transparent absorber, characterized in that: include: Obtaining design requirements for a transparent absorber, wherein the design requirements include a structure type, a frequency band range, and an absorptivity of a periodic lossy surface; According to the structure type, periodic lossy surface analysis and impedance extraction are performed to establish a mapping rule between the structure parameters of the structure type and the equivalent circuit parameters; Establishing an objective function according to the frequency band range and the wave absorption rate, selecting an absorber material and an equivalent circuit model, and determining a parameter range of the equivalent circuit model; iteratively optimizing the equivalent circuit model using circuit simulation software, fitting the objective function, and obtaining design parameters of the equivalent circuit model; According to the mapping rule and the design parameters, inversely derive the structural parameters corresponding to the design parameters; According to the structure type and the structure parameters, an ultra-wideband transparent absorber satisfying the frequency band range and the wave absorption rate is obtained.

2. The method according to claim 1, characterized in that According to the structure type, periodic lossy surface analysis and impedance extraction are performed to establish a mapping rule between the structure parameters of the structure type and the equivalent circuit parameters, including: According to the structure type, a periodic lossy surface analysis is performed to obtain structural parameters that affect the equivalent circuit; Full-wave simulation software is used to extract impedance, establish a mapping relationship between the structural parameters and equivalent impedance, and establish a mapping rule between the structural parameters and equivalent circuit parameters.

3. The method according to claim 2, characterized in that The mapping rules between the structural parameters of the structural type and the equivalent circuit parameters include: C=e e C0, Where C is the capacitance of the equivalent circuit, ε e is the equivalent dielectric constant coefficient, C0 is the extracted capacitance, ε r1 is the dielectric constant of the dielectric layer on one side of the patch, ε r2 is the dielectric constant of the dielectric layer on the other side of the patch.

4. The method according to any one of claims 1 to 3, characterized in that: Establishing an objective function according to the frequency band range and the wave absorption rate, selecting the wave absorbing body material and the equivalent circuit model comprises: The absorber material includes: loss layer material and dielectric layer material; The equivalent circuit model includes: the material of the lossy layer, the number of lossy layers, and the impedance structure of the lossy surface.

5. The method according to claim 4, characterized in that The loss layer material is a highly transparent and highly transmittance conductive film with controllable square resistance and capable of being processed into patterns, and the dielectric layer material is a highly transparent and highly transmittance glass-like material.

6. The method according to any one of claims 1 to 3, characterized in that: The parameter ranges for determining the equivalent circuit model include: Relative dielectric constant ε of the dielectric layer r The range is set to 1≤ε r ≤9, the range of equivalent capacitance level fF is set to 1fF≤C≤1500fF, and the range of equivalent inductance level nH is set to 0nH≤L≤10nH.

7. The method according to any one of claims 1 to 3, characterized in that: The design parameters include: impedance parameters of each lossy layer, thickness of the lossy layer and dielectric constant of the dielectric layer.

8. A reverse design device for an ultra-wideband transparent absorber, characterized in that: include: An acquisition module, used to acquire design requirements of a transparent absorber, wherein the design requirements include a structure type, a frequency band range, and an absorptivity of a periodic lossy surface; An extraction module, used to perform periodic lossy surface analysis and impedance extraction according to the structure type, and establish a mapping rule between the structure parameters of the structure type and the equivalent circuit parameters; An analysis module is used to establish an objective function according to the frequency band range and the wave absorption rate, select an absorber material and an equivalent circuit model, and determine a parameter range of the equivalent circuit model; iteratively optimize the equivalent circuit model using circuit simulation software, fit the objective function, and obtain design parameters of the equivalent circuit model; An inversion module, used for inverting the structural parameters corresponding to the design parameters according to the mapping rule and the design parameters; The output module is used to obtain an ultra-wideband transparent absorber that meets the frequency band range and absorption rate according to the structure type and the structure parameters.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 7 are implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 7 are implemented.

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