Semiconductor devices for power

Abstract

The present invention aims to provide a semiconductor device for electric power that can realize miniaturization of a module. The semiconductor device for electric power according to the present invention comprises: an emitter main electrode, which is provided on each of a plurality of semiconductor chips; and a main electrode emitter sensing terminal, which is directly connected to each emitter main electrode and partially exposed to the outside of the module, each main electrode emitter sensing terminal is located at a diagonal position when viewed from above from the outside of the module, and the distance between the main electrode emitter sensing terminal and the emitter main electrode to which it is connected is closer than the distance between the main electrode emitter sensing terminals.

Description

Technical Field

[0001] The present invention relates to a power semiconductor device used for controlling a motor of, for example, an electric railway device or an automobile device. Background Art

[0002] In the case of power semiconductor devices, there is a method for controlling short-circuit protection based on the difference in inductance between the main emitter electrode and the auxiliary emitter electrode. Conventional power semiconductor devices are configured such that the main emitter sensing terminal is connected to a circuit pattern on an insulating substrate provided inside a module, and a portion of the main emitter sensing terminal is led out of the module. However, this configuration has problems such as complicated wiring and limited space on the insulating substrate.

[0003] In addition, as the module is miniaturized, a structure in which the main electrode emitter sense terminal is externally connected to the module has been proposed. However, since the main electrode emitter sense terminal is arranged outside the module in this structure, there is a concern that the insulation will be reduced. In addition, from the perspective of workability, there is also the problem of the need to connect the main electrode emitter sense terminal externally to the module.

[0004] As a countermeasure to the above-mentioned problem, a structure is proposed in which a main electrode emitter sense terminal is directly led out from the main electrode to the outside of the module (for example, refer to Patent Documents 1 and 2).

[0005] Patent Document 1: Japanese Patent Application Publication No. 2005-12053

[0006] Patent Document 2: Japanese Patent Application Publication No. 2010-16925 Summary of the invention

[0007] In Patent Documents 1 and 2, when the main electrode emitter sense terminal is simply drawn out from the main electrode, an insulation design is required because the number of external output terminals increases, which is disadvantageous in miniaturization of the module.

[0008] The present invention has been made to solve such a problem, and an object of the present invention is to provide a power semiconductor device that can realize miniaturization of a module.

[0009] In order to solve the above-mentioned problems, the power semiconductor device according to the present invention comprises: a main electrode provided on each of a plurality of semiconductor chips; and a main electrode emitter sensing terminal directly connected to each main electrode, a part of the main electrode emitter sensing terminal being exposed to the outside of the module, and each main electrode emitter sensing terminal being, when viewed from above from the outside of the module,

[0010] The main electrode emitter sensing terminals are located at opposite corners, and the distance between the main electrode emitter sensing terminals and the main electrode to which they are connected is closer than the distance between the main electrode emitter sensing terminals.

[0011] Effects of the Invention

[0012] According to the present invention, a power semiconductor device comprises: a main electrode, which is arranged on each of a plurality of semiconductor chips; and a main electrode emitter sensing terminal, which is directly connected to each main electrode, a portion of which is exposed to the outside of the module, each main electrode emitter sensing terminal is located at a diagonal when viewed from the outside of the module in a top view, and the distance between the main electrode emitter sensing terminal and the main electrode to which it is connected is closer than the distance between the main electrode emitter sensing terminals, thereby enabling miniaturization of the module.

[0013] The objects, features, methods and advantages of the present invention will become more apparent from the following detailed description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 FIG. 1 is a diagram showing the appearance of a module including a power semiconductor device according to an embodiment of the present invention.

[0015] Figure 2 It is a cross-sectional view showing an example of the structure of a power semiconductor device according to an embodiment of the present invention.

[0016] Figure 3 FIG. 1 is a diagram showing an example of a main electrode emitter sense terminal according to an embodiment of the present invention.

[0017] Figure 4 FIG. 1 is a diagram showing an example of a main electrode emitter sense terminal according to an embodiment of the present invention.

[0018] Figure 5 FIG. 1 is a diagram showing an example of a main electrode emitter sense terminal according to an embodiment of the present invention.

[0019] Figure 6 FIG. 1 is a diagram showing an example of a main electrode emitter sense terminal according to an embodiment of the present invention.

[0020] Figure 7 is a cross-sectional view showing an example of the structure of a power semiconductor device according to the related art.

[0021] Figure 8 FIG. 1 is a diagram showing the appearance of a module including a power semiconductor device according to the related art. DETAILED DESCRIPTION

[0022] Hereinafter, embodiments of the present invention will be described based on the drawings.

[0023] <Related Technology>

[0024] The technology related to the embodiment of the present invention will be described.

[0025] Figure 7 is a cross-sectional view showing an example of the structure of a power semiconductor device according to the related art.

[0026] like Figure 7 As shown, metal patterns 7, 8, and 9 are provided on the insulating material 10. In addition, the metal patterns 7, 8, and 9 are equivalent to the circuit patterns described above. The emitter main electrode 1 and the main electrode emitter sense terminal 22 are provided on the metal pattern 7. The semiconductor chip 11 is provided on the metal pattern 8. The auxiliary emitter sense terminal 5 is provided on the metal pattern 9.

[0027] The metal pattern 7 is connected to the emitter electrode which is the main electrode of the semiconductor chip 11 via the bonding wire 12. The metal pattern 9 is connected to the emitter electrode which is the main electrode of the semiconductor chip 11 via the bonding wire 13.

[0028] A housing 14 is provided so that the emitter main electrode 1, the main electrode emitter sense terminal 22 and the auxiliary emitter sense terminal 5 are partially exposed to the outside. The inside of the housing 14 is filled with a sealing agent 15. The housing 14 defines the outer shape of the module having the power semiconductor device.

[0029] As mentioned above, in Figure 7 In the structure shown, there are problems such as that the wiring for leading the main electrode emitter sense terminal 22 to the outside of the housing 14 becomes complicated and the space above the insulating material 10 is limited.

[0030] Figure 8 FIG. 1 is a diagram showing the appearance of a module including a power semiconductor device according to the related art.

[0031] like Figure 8 As shown, the main electrode emitter sensing terminals 23 and 24 are externally connected to the module. Figure 8 In the structure shown, since the main electrode emitter sense terminals 23 and 24 are arranged outside the module, there is a concern that the insulation may be reduced. In addition, from the perspective of workability, there is also the problem of needing to connect the main electrode emitter sense terminals 23 and 24 to the module externally.

[0032] This embodiment is proposed to solve the above-mentioned problem and is described in detail below.

[0033] <Implementation Method>

[0034] Figure 1 FIG. 2 is a diagram showing the appearance of a module having a power semiconductor device according to the present embodiment. Figure 1 In FIG. 1 , a two-in-one module is shown as an example.

[0035] like Figure 1 As shown, the module has an emitter main electrode 1 and an emitter main electrode 2. A main electrode emitter sense terminal 3 and an auxiliary emitter sense terminal 5 having the same potential as the emitter main electrode 1 are provided near the emitter main electrode 1. A main electrode emitter sense terminal 4 and an auxiliary emitter sense terminal 6 having the same potential as the emitter main electrode 2 are provided near the emitter main electrode 2. The main electrode emitter sense terminals 3 and 4 have a function of detecting the potential of the main electrode of the semiconductor chip, that is, the emitter electrode. The auxiliary emitter sense terminals 5 and 6 have a function of detecting the potential near the semiconductor chip.

[0036] The main electrode emitter sense terminals 3, 4 are led out of the module so as to be located at diagonals in a plan view. In a plan view, the distance between the main electrode emitter sense terminals 3, 4 and the emitter main electrodes 1, 2 to which they are connected is closer than the distance between the main electrode emitter sense terminals 3, 4.

[0037] Furthermore, the auxiliary emitter sense terminals 5 and 6 are led out of the module so as to be located at diagonals opposite to the main electrode emitter sense terminals 3 and 4 in a plan view.

[0038] Figure 2 It is a cross-sectional view showing an example of the structure of the power semiconductor device according to the present embodiment.

[0039] The power semiconductor device according to the present embodiment is characterized in that the main electrode emitter sense terminal 3 is directly connected to the emitter main electrode 1. Figure 2 In the example of , the main electrode emitter sensing terminal 3 is branched from the emitter main electrode 1 and led out to the outside of the module. Figure 2 In FIG. 1 , the main electrode emitter sense terminal 3 is shown in the figure, but the main electrode emitter sense terminal 4 is the same.

[0040] The main electrode emitter sensing terminal 3 is led out to the outside of the module. Figure 2 As shown in the example of , when the main electrode emitter sense terminal 3 is led out of the module, a process of bending the main electrode emitter sense terminal 3 is required. At this time, in order to facilitate the bending work, the main electrode emitter sense terminal 3 is preferably flattened.

[0041] Metal patterns 7, 8, and 9 are provided on the insulating material 10. On the metal pattern 7, an emitter main electrode 1 is provided by US (Ultrasonic) bonding or solder bonding. The emitter main electrode 1 is made of a metal such as copper (Cu) or aluminum (Al). The insulating material 10 is made of ceramics such as aluminum nitride (AlN), silicon nitride (SiN), and aluminum oxide (Al2O3), or a polymer resin.

[0042] A semiconductor chip 11 is provided on the metal pattern 8. The semiconductor chip 11 may be an IGBT (Insulated Gate Bipolar Transistor) or a diode made of silicon (Si). Preferably, the semiconductor chip 11 may be a SiC-MOSFET or a SiC-SBD (Schottky Barrier Diode) using a wide bandgap semiconductor material such as silicon carbide (SiC).

[0043] Auxiliary emitter sense terminal 5 is provided on metal pattern 9. Metal pattern 7 is connected to the emitter electrode, which is the main electrode of semiconductor chip 11, via bonding wire 12. Metal pattern 9 is connected to the emitter electrode, which is the main electrode of semiconductor chip 11, via bonding wire 13.

[0044] The housing 14 is provided so that a part of the emitter main electrode 1, the main electrode emitter sensing terminal 3 and the auxiliary emitter sensing terminal 5 are exposed to the outside. The inside of the housing 14 is filled with a sealing agent 15. The housing 14 is formed of a resin such as PPS (Polyphenylene sulfide), PET (Polyethylene terephthalate) + PBT (Polybutylene terephthalate), PBT or nylon.

[0045] <Modification 1>

[0046] Figure 3 is a diagram showing an example of the main electrode emitter sense terminal 3 according to the present embodiment. Figure 3 , an example of the main electrode emitter sense terminal 3 is shown, but the main electrode emitter sense terminal 4 is also the same.

[0047] exist Figure 3 2 shows a case where the main electrode emitter sense terminal 3 is a barrel nut 16. The barrel nut 16 is made of a metal such as SUS (Steel Use Stainless Steel), Cu, or Al.

[0048] Figure 3The structure shown can be formed by insert molding or external insert molding. In the case of insert molding, the emitter main electrode 1 is installed after the barrel nut 16 is installed in the mold. Thereafter, the barrel nut 16 and the emitter main electrode 1 are riveted when the resin molding mold is closed. Alternatively, the barrel nut 16 and the emitter main electrode 1 may be set in the mold in a state where they are riveted in advance.

[0049] In the case of external molding, the pre-riveted barrel nut 16 and the emitter main electrode 1 are inserted into the pre-molded case. In the case of external molding, since a load may be applied to the case, the barrel nut 16 and the emitter main electrode 1 may be riveted before being inserted into the case.

[0050] Alternatively, the emitter main electrode 1 may be subjected to burring or tapping, and the barrel nut 16 may be connected to the processed portion. Alternatively, the emitter main electrode 1 and the barrel nut 16 may be connected by screws.

[0051] <Modification 2>

[0052] Figure 4 : is a diagram showing an example of the main electrode emitter sense terminal 3 according to the present embodiment. Figure 4 An example of the main electrode emitter sense terminal 3 is shown, but the main electrode emitter sense terminal 4 is also the same.

[0053] exist Figure 4 In the example of , the main electrode emitter sense terminal 3 includes a barrel nut 16 , a lead wire 18 connected to the barrel nut 16 , and a connector 17 connected to the lead wire 18 . The connector 17 is connected to the emitter main electrode 1 .

[0054] <Variation 3>

[0055] Figure 5 : is a diagram showing an example of the main electrode emitter sense terminal 3 according to the present embodiment. Figure 5 An example of the main electrode emitter sense terminal 3 is shown, but the main electrode emitter sense terminal 4 is also the same.

[0056] exist Figure 5 In the example, the main electrode emitter sense terminal 3 has a barrel nut 16 and an insertion wiring 19 connected to the barrel nut 16. The insertion wiring 19 is connected to the emitter main electrode 1. Preferably, the barrel nut 16 and the insertion wiring 19 are connected by riveting, flanging or tapping.

[0057] Furthermore, the main electrode emitter sense terminal 3 may not include the barrel nut 16. In this case, one end of the insertion wiring 19 is connected to the emitter main electrode 1, and the other end is led out to the outside of the module.

[0058] <Variation 4>

[0059] Figure 6 : is a diagram showing an example of the main electrode emitter sense terminal 3 according to the present embodiment. Figure 6 An example of the main electrode emitter sense terminal 3 is shown, but the main electrode emitter sense terminal 4 is also the same.

[0060] exist Figure 6 In the example of FIG. 1 , the main electrode emitter sensing terminal 3 is a spring contact pin 20 provided inside the module cover 21. When the cover 21 is mounted on the housing 14, the spring contact pin 20 contacts the emitter main electrode 1. In this case, the contact portion between the spring contact pin 20 and the emitter main electrode 1 may be covered with a sealing agent 15 made of a silicone gel or an epoxy resin.

[0061] <Effect>

[0062] In the power semiconductor device according to the present embodiment, the main electrode emitter sense terminals 3 and 4 are directly connected to the emitter main electrodes 1 and 2. Therefore, there is no need Figure 8 Since the main electrode emitter sense terminals 23 and 24 are externally connected as shown, the workability can be improved and the reduction of the insulation property can be suppressed.

[0063] Furthermore, since the main electrode emitter sense terminals 3 and 4 are arranged near the emitter main electrodes 1 and 2 at the same potential, the insulation design becomes easy and the module can be miniaturized.

[0064] Furthermore, since main electrode emitter sense terminals 3 and 4 are arranged diagonally and auxiliary emitter sense terminals 5 and 6 are arranged diagonally opposite to main electrode emitter sense terminals 3 and 4 , a gate driver for controlling the module can be firmly mounted on the module.

[0065] In the past, it was difficult to achieve miniaturization of the module commensurate with the performance of the wide bandgap semiconductor material due to limitations of the package such as the insulation distance or the internal wire. However, according to the power semiconductor device involved in this embodiment, it is also possible to achieve miniaturization of the package and effectively utilize the performance of the wide bandgap semiconductor material. By using the wide bandgap semiconductor material, the high temperature operation and high speed operation of the module can be achieved, and thus the miniaturization of the cooler and control circuit (not shown) around the module can also be achieved.

[0066] Furthermore, the present invention can appropriately modify or omit the embodiments within the scope of the invention.

[0067] Although the present invention has been described in detail, the above invention is in all aspects illustrative and the present invention is not limited thereto. It should be understood that numerous modifications not shown here are conceivable without departing from the scope of the present invention.

[0068] Description of the label

[0069] 1, 2 emitter main electrode, 3, 4 main electrode emitter sense terminal, 5, 6 auxiliary emitter sense terminal, 7, 8, 9 metal pattern, 10 insulating material, 11 semiconductor chip, 12, 13 bonding wire, 14 shell, 15 encapsulant, 16 barrel nut, 17 connector, 18 lead wiring, 19 insertion wiring, 20 spring contact pin, 21 cover, 22, 23, 24 main electrode emitter sense terminal.

Claims

1. A semiconductor device for electric power, comprising: a main electrode disposed on each of the plurality of semiconductor chips; and A main electrode emitter sensing terminal is directly connected to each of the main electrodes, and a portion of the main electrode emitter sensing terminal is exposed to the outside of the module. Each of the main electrode emitter sensing terminals is located at a diagonal position when viewed from above from outside the module, and the distance between the main electrode emitter sensing terminal and the main electrode to which it is connected is closer than the distance between the main electrode emitter sensing terminals. The power semiconductor device further includes an auxiliary emitter sense terminal, the auxiliary emitter sense terminal being indirectly connected to each of the main electrodes, a portion of the auxiliary emitter sense terminal being exposed to the outside of the module. Each auxiliary emitter sensing terminal is located at a diagonal opposite to the main electrode emitter sensing terminal when viewed from above outside the module.

2. A semiconductor device for electric power, comprising: a main electrode disposed on each of the plurality of semiconductor chips; and A main electrode emitter sensing terminal is directly connected to each of the main electrodes, and a portion of the main electrode emitter sensing terminal is exposed to the outside of the module. Each of the main electrode emitter sensing terminals is located at a diagonal position when viewed from above from outside the module, and the distance between the main electrode emitter sensing terminal and the main electrode to which it is connected is closer than the distance between the main electrode emitter sensing terminals. The main electrode emitter sensing terminal is a barrel nut connected to the main electrode by riveting.

3. A semiconductor device for electric power, comprising: a main electrode disposed on each of the plurality of semiconductor chips; and A main electrode emitter sensing terminal is directly connected to each of the main electrodes, and a portion of the main electrode emitter sensing terminal is exposed to the outside of the module. Each of the main electrode emitter sensing terminals is located at a diagonal position when viewed from above from outside the module, and the distance between the main electrode emitter sensing terminal and the main electrode to which it is connected is closer than the distance between the main electrode emitter sensing terminals. The main electrode emitter sensing terminal is a barrel nut connected to the main electrode by a screw.

4. A semiconductor device for electric power, comprising: a main electrode disposed on each of the plurality of semiconductor chips; and A main electrode emitter sensing terminal is directly connected to each of the main electrodes, and a portion of the main electrode emitter sensing terminal is exposed to the outside of the module. Each of the main electrode emitter sensing terminals is located at a diagonal position when viewed from above from outside the module, and the distance between the main electrode emitter sensing terminal and the main electrode to which it is connected is closer than the distance between the main electrode emitter sensing terminals. The main electrode emitter sensing terminal has a barrel nut, a lead wire connected to the barrel nut, and a connector connected to the lead wire. The connector is connected to the main electrode.

5. A semiconductor device for electric power, comprising: a main electrode disposed on each of the plurality of semiconductor chips; and A main electrode emitter sensing terminal is directly connected to each of the main electrodes, and a portion of the main electrode emitter sensing terminal is exposed to the outside of the module. Each of the main electrode emitter sensing terminals is located at a diagonal position when viewed from above from outside the module, and the distance between the main electrode emitter sensing terminal and the main electrode to which it is connected is closer than the distance between the main electrode emitter sensing terminals. The main electrode emitter sensing terminal has a barrel nut and an insertion wiring connected to the barrel nut. The insertion wiring is connected to the main electrode.

6. A semiconductor device for electric power, comprising: a main electrode disposed on each of the plurality of semiconductor chips; and A main electrode emitter sensing terminal is directly connected to each of the main electrodes, and a portion of the main electrode emitter sensing terminal is exposed to the outside of the module. Each of the main electrode emitter sensing terminals is located at a diagonal position when viewed from above from outside the module, and the distance between the main electrode emitter sensing terminal and the main electrode to which it is connected is closer than the distance between the main electrode emitter sensing terminals. The main electrode emitter sense terminal is an insertion wiring connected to the main electrode.

7. A semiconductor device for electric power, comprising: a main electrode disposed on each of the plurality of semiconductor chips; and A main electrode emitter sensing terminal is directly connected to each of the main electrodes, and a portion of the main electrode emitter sensing terminal is exposed to the outside of the module. Each of the main electrode emitter sensing terminals is located at a diagonal position when viewed from above from outside the module, and the distance between the main electrode emitter sensing terminal and the main electrode to which it is connected is closer than the distance between the main electrode emitter sensing terminals. The main electrode emitter sense terminal is a spring contact pin disposed inside the cover of the module.

8. The power semiconductor device according to claim 7, wherein: The main electrode and the spring contact pin are covered by a potting agent.

9. The power semiconductor device according to any one of claims 1 to 8, wherein: Each of the semiconductor chips is made of a wide bandgap semiconductor material.

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