Phased array antenna unit and two-dimensional scanning phased array
By integrating GaAs HEMT phase modulation devices into antenna elements, two-dimensional scanning and large-scale arraying in the terahertz band are realized, solving the problems of accurate angle measurement and beam splitting in one-dimensional phased array scanning antennas, improving communication capacity and gain, and making it suitable for networked satellite communication.
Patent Information
- Application Number
- CN202210220616.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-03-08
- Publication Date
- 2025-11-18
- Estimated Expiration
- 2042-03-08
AI Technical Summary
One-dimensional phased array scanning antennas cannot achieve accurate angle measurement and are prone to lobe splitting, resulting in high sidelobes and low gain, which limits their application in networked satellite communications.
A GaAs-based HEMT phase modulation device is integrated into the antenna unit. Terahertz two-dimensional scanning is achieved by independently controlling each unit. Combined with standard fabrication technology, large-scale arraying and engineering are realized.
It achieves two-dimensional scanning in the terahertz band, solves the problems of flexible beam agility and large communication capacity, enhances gain and simplifies structural design, making it easy to engineer.
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Figure CN114744403B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of antenna engineering technology, and in particular to a phased array antenna element and a two-dimensional scanning phased array. Background Technology
[0002] The terahertz band is in the transitional stage from macroscopic electronics to microscopic optoelectronics. Its wavelength is lower than the electrical wavelength but higher than the optical wavelength. In the field of communications, it can effectively alleviate the increasingly scarce spectrum resources and capacity limitations of wireless systems, and has unique advantages. It is a frequency band worth exploring.
[0003] With the development of 6G network technology, satellite communication has evolved from single satellites to constellations and then to networks. In the integrated 6G space-ground network, it is widely believed that future networks will utilize terahertz, laser, and microwave technologies. In high-orbit satellite communication, laser communication is used for long-distance communication, offering high capacity; however, it is point-to-point, requiring a servo system for tracking and alignment. In low-orbit satellite-to-ground communication, microwave band phased array communication allows for flexible tracking and beam agility, but it suffers from low communication rates and capacity. To achieve flexible beam agility and high communication capacity in networked satellite communication, terahertz phased array antennas are the most suitable choice, applicable to multi-user access, satellite networking, and space station rendezvous.
[0004] In related technologies, due to the limitations of phase shifters, there are no large-scale phased arrays based on traditional antenna designs. Only one-dimensional phased array scanning antennas based on electromagnetic surfaces exist. However, one-dimensional phased array antennas themselves cannot achieve accurate angle measurement, which limits their application. Secondly, one-dimensional scanning phased array antennas based on electromagnetic surfaces are prone to beam splitting due to the limitations of their principle, resulting in high sidelobes and reduced gain.
[0005] Therefore, it is necessary to establish a networked satellite communication system with flexible and agile beams and large communication capacity, so as to achieve terahertz two-dimensional scanning by independently controlling each phased array antenna element and to deploy it on a large scale, which is easy to engineer. Summary of the Invention
[0006] This application provides a phased array antenna element and a two-dimensional scanning phased array to solve the problems of one-dimensional phased array scanning antennas being unable to achieve accurate angle measurement and being prone to beam splitting, resulting in high sidelobes and low gain. The phase-modulating device based on GaAs (Gallium Arsenide) HEMT (High Electron Mobility Transistor) is integrated into the antenna element. By independently controlling each element, terahertz two-dimensional scanning is achieved with wide bandwidth, simple structure, and large-scale arraying. The standard fabrication process makes it easy to engineer.
[0007] The first aspect of this application provides a phased array antenna element, including:
[0008] The system comprises a metal radiating layer, a GaAs-based phase-modulating HEMT, a semi-insulating substrate, a metal reflector, and a via, wherein the metal radiating layer, the phase-modulating HEMT, the semi-insulating substrate, the metal reflector, and the via are all symmetrical along a central axis; the metal radiating layer consists of two symmetrical radiating sheets of a predetermined shape connected together and provided with a groove structure, a DC voltage control line, two symmetrical impedance matching lines, and a T-shaped DC grounding line.
[0009] The DC voltage control line and the T-shaped DC ground line are used to provide control voltage for the GaAs-based phase-modulated HEMT. When the control voltage is 0V, the phase-modulated HEMT is turned on and the phased array antenna unit is in the first state. When the control voltage is -5V, the phase-modulated HEMT is turned off and the phased array antenna unit is in the second state.
[0010] According to one embodiment of this application, the GaAs-based phase-modulated HEMT includes: intrinsic GaAs, intrinsic AlGaAs (aluminum gallium arsenide), doped AlGaAs that provides charge carriers, two ohmic contact patches, and one control gate patch.
[0011] According to one embodiment of this application, the symmetrical radiating plate is rectangular or semi-circular.
[0012] According to one embodiment of this application, the thickness of the semi-insulating substrate is 100 μm.
[0013] According to one embodiment of this application, the semi-insulating substrate is a GaAs substrate.
[0014] According to one embodiment of this application, the metal reflector is Au.
[0015] According to one embodiment of this application, the through-hole is a tapered through-hole, which enables multi-layer wiring of the control lines of each independently controlled phased array antenna element.
[0016] A second aspect of this application provides a two-dimensional scanning phased array, employing the phased array antenna element as described in the preceding claims, comprising:
[0017] 2 N Individual units, gold wire bonding wires, DC ground wires for HEMTs connecting each phased array antenna unit, wiring layers individually controlled by each phased array antenna unit, and interfaces for connecting the wave control circuit.
[0018] Each subarray consists of 16×16 phased array antenna elements, where N is a positive integer. The two-dimensional scanning phased array is used for azimuth and / or elevation two-dimensional scanning.
[0019] According to one embodiment of this application, the DC ground lines of each row of adjacent subarrays are connected together, and gold wire bonding points are provided.
[0020] According to one embodiment of this application, the gold wire bonding wires include gold wire bonding wires between adjacent subarrays and gold wire bonding wires between the subarrays and the wiring layer, for grounding.
[0021] According to one embodiment of this application, the wiring layer controlled separately by the phased array antenna unit is connected to the phased array antenna unit through a preset number of circular ball grid solder joints, for independently controlling the phased array antenna unit.
[0022] According to one embodiment of this application, the wiring layer individually controlled by the phased array antenna unit is a multilayer FR-4 substrate.
[0023] According to one embodiment of this application, the phase difference between the first state and the second state of the phased array antenna element is 180°.
[0024] This solves the problems of one-dimensional phased array scanning antennas, such as the inability to achieve accurate angle measurement and the susceptibility to lobe splitting, resulting in high sidelobes and low gain. The phased array antenna of this application can be deployed on a large scale, and its standard fabrication process makes it easy to engineer.
[0025] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description
[0026] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:
[0027] Figure 1 This is a schematic diagram of the structure of a phased array antenna element according to an embodiment of this application;
[0028] Figure 2 This is a schematic diagram of the structure of a phase-modulated HEMT according to an embodiment of this application;
[0029] Figure 3 This is a diagram showing the amplitude characteristics of a phase-modulated HEMT cell during on and off states according to an embodiment of this application.
[0030] Figure 4 This is a phase characteristic diagram of a phase-modulated HEMT cell during on and off states according to an embodiment of this application;
[0031] Figure 5 This is a schematic diagram of the structure of a two-dimensional scanning phased array according to an embodiment of this application;
[0032] Figure 6 This is a schematic diagram of a subarray of a two-dimensional scanning phased array according to an embodiment of this application;
[0033] Figure 7 This is a schematic diagram of the circular ball grid solder joints of a subarray provided according to an embodiment of this application;
[0034] Figure 8 This is a schematic diagram of the scanning direction according to an embodiment of this application;
[0035] Figure 9 This is a schematic diagram of the orientation of the E-plane and H-plane of a subarray provided according to an embodiment of this application. Detailed Implementation
[0036] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.
[0037] The phased array antenna unit of this application embodiment is described below with reference to the accompanying drawings. Addressing the issues mentioned in the background section regarding the inability of one-dimensional phased array scanning antennas to achieve accurate angle measurement and the susceptibility to lobe splitting, resulting in high sidelobes and low gain, this application provides a phased array antenna unit. This unit includes a metal radiating layer, a GaAs-based phase-modulating HEMT, a semi-insulating substrate, a metal reflector, and vias, all symmetrical along a central axis. The metal radiating layer consists of two symmetrically shaped radiating plates connected together with a slot structure, two symmetrical impedance matching lines, a DC voltage control line for providing control voltage, and a T-shaped DC grounding line. When the control voltage is 0V, the phase-modulating HEMT is turned on, and the phased array antenna unit is in its first state. When the control voltage is -5V, the phase-modulating HEMT is turned off, and the phased array antenna unit is in its second state. The two states are 180° out of phase, allowing for 1-bit phase modulation. By independently controlling each element to achieve terahertz two-dimensional scanning, the problem of one-dimensional phased array scanning antennas being unable to achieve accurate angle measurement and being prone to beam splitting, resulting in high sidelobes and reduced gain, is solved. The GaAs-based HEMT is integrated into the antenna element, and terahertz two-dimensional scanning is achieved by independently controlling each element. It also has a wide bandwidth, simple structure, and can be deployed on a large scale. The standard fabrication process makes it easy to engineer.
[0038] Specifically, Figure 1 This is a schematic diagram of the structure of a phased array antenna unit provided in an embodiment of this application.
[0039] like Figure 1 As shown, the phased array antenna element 10 includes: a metal radiating layer 100, a GaAs-based phase-modulated HEMT 200, a semi-insulating substrate 300, a metal reflector 400, and a through hole 500.
[0040] The metal radiating layer 100, the GaAs-based phase-modulated HEMT 200, the semi-insulating substrate 300, the metal reflector 400, and the through-hole 500 are all symmetrical along the centerline. The metal radiating layer 100 consists of two symmetrical radiating plates 101 connected by a preset shape and provided with a slot structure, a DC voltage control line 102, two symmetrical impedance matching lines 103, and a T-shaped DC grounding line 104. The DC voltage control line 102 and the T-shaped DC grounding line 104 are used to provide control voltage. When the control voltage is 0V, the GaAs-based phase-modulated HEMT 200 is turned on, and the phased array antenna element is in the first state. When the control voltage is -5V, the phase-modulated HEMT is turned off, and the phased array antenna element is in the second state.
[0041] Furthermore, in some embodiments, the GaAs-based phase-modulated HEMT200 includes: intrinsic GaAs, intrinsic AlGaAs, doped AlGaAs that provides charge carriers, two ohmic contact patches, and one control gate patch.
[0042] Specifically, such as Figure 1 As shown, the metal radiating layer 100 includes two interconnected slotted symmetrical radiating plates 101 in the shape of an "E", which resonate and radiate electromagnetic waves at corresponding frequencies, a DC voltage control line 102, two symmetrical impedance matching lines 103, and a T-shaped DC grounding line 104. The overall shape of the symmetrical radiating plates 101 is not limited to a rectangular shape; it can be semi-circular. An enlarged view of the GaAs-based phase-modulated HEMT 200 can be seen as follows. Figure 2 The semi-insulating substrate 300 shown is a GaAs substrate with a thickness of 100 μm. GaAs can be used as a substrate to grow materials such as GaAs / AlGaAs / GaN / AlGaN, which is convenient for fabricating HEMTs. Unlike sapphire, it is not brittle and can be used to process high-density through-holes. The metal reflector 400 is Au. The through-hole 500 is a tapered through-hole with a top diameter of 40 μm and a bottom diameter of 70 μm. The tapered through-hole is mainly used to allow the control lines of each independently controlled unit to be wired in multiple layers. The DC voltage control line 102 and the T-shaped DC ground line 104 are mainly used to provide control voltage for HEMT200.
[0043] Furthermore, in this embodiment, when the control voltage provided by the DC voltage control line 102 and the T-shaped DC grounding line 104 is 0V, the GaAs-based phase-modulating HEMT200 is turned on, and is displayed as "State 1" (i.e., the first state); when the control voltage provided by the DC voltage control line 102 and the T-shaped DC grounding line 104 is -5V, the GaAs-based phase-modulating HEMT200 is turned off, and is displayed as "State 0" (i.e., the second state).
[0044] Specifically, such as Figure 3 , Figure 4 The figures show the amplitude and phase characteristics of the HEMT cells when it is on and off, respectively. As can be seen from the figures, a 180° phase difference between the two state cells can achieve precise 1-bit phase modulation, with a phase bandwidth of 18GHz@180°±30°.
[0045] According to the phased array antenna unit proposed in the embodiments of this application, a control voltage can be provided to the GaAs-based phase-modulating HEMT via a DC voltage control line and a T-shaped DC ground line. When the control voltage is 0V, the phase-modulating HEMT is turned on, and the phased array antenna unit is in the first state; when the control voltage is -5V, the phase-modulating HEMT is turned off, and the phased array antenna unit is in the second state. Therefore, using a GaAs-based HEMT for phase modulation not only results in a simple structure but also allows for high-density perforation to achieve large-scale array deployment, making it easy to engineer.
[0046] Next, referring to the accompanying drawings, a two-dimensional scanning phased array according to an embodiment of this application is described.
[0047] Figure 5 This is a schematic diagram of the structure of a two-dimensional scanning phased array according to an embodiment of this application.
[0048] like Figure 5 As shown, the two-dimensional scanning phased array 20 can employ... Figure 1 The phased array antenna element shown in the embodiment includes a two-dimensional scanning phased array 20 comprising: 2 N Each phased array antenna element (e.g., element 601), gold wire bonding wire 700, DC ground wire 800 connecting the HEMT of each phased array antenna element, wiring layer 900 individually controlled by each phased array antenna element, and interface 1000 connecting the wave control circuit.
[0049] Specifically, the specific implementation plan for the unit can be as follows: Figure 6 As shown, each unit consists of 16×16 phased array antenna elements 10. The DC ground lines 800 of each row are connected on both sides of the unit; that is, each row's T-shaped DC ground line 104 is connected to each row's DC ground line 800. Figure 6The T-shaped DC grounding wire inside the solid circle shown is connected to the DC grounding wire 800 inside the dashed square, and a gold wire bonding point is set at any position at the connection point, such as... Figure 6 As shown in the dashed elliptical box. The cells used in the two-dimensional scanning phased array 20 can be multiples of 2, such as 2^28. N There are 10 units, where N is a positive integer; the gold wire bonding wires 700 include gold wire bonding wires 701 between adjacent units to expand more units, and gold wire bonding wires 702 between the unit and the wiring layer for grounding; the wiring layer 900, which is individually controlled by the phased array antenna unit 10, is connected to the phased array antenna unit 10 through a preset number (e.g., 16×16) of circular ball grid solder joints, for independently controlling the phased array antenna unit 10, and the circular ball grid solder joints of the subarray are as follows: Figure 7 As shown, the wiring layer 900 of the phased array antenna element 10, which is individually controlled, can be a multi-layer FR-4 board material; the interface 1000 connecting the wave control circuit consists of 16×16 pins, each pin supplied with 0V or -5V voltage to independently control the phase of each element. The two-dimensional scanning phased array 20 can be used for azimuth and / or elevation two-dimensional scanning, such as... Figure 8 As shown, it can achieve ±60° two-dimensional scanning, and the positioning accuracy can reach 1° (azimuth) × 1° (tilt).
[0050] Furthermore, based on the aforementioned two-dimensional scanning phased array 20, the orientation diagrams of the E-plane and H-plane of a cell in one embodiment of this application can be as follows: Figure 9 As shown, the E-plane is a directional plane parallel to the direction of the electric field; the H-plane is a directional plane parallel to the direction of the magnetic field.
[0051] According to the two-dimensional scanning phased array proposed in the embodiments of this application, the phased array antenna unit mentioned above solves the problems that one-dimensional phased array scanning antennas cannot achieve accurate angle measurement and are prone to beam splitting, resulting in high sidelobes and reduced gain. The GaAs-based HEMT is integrated into the antenna unit, and terahertz two-dimensional scanning is achieved by independently controlling each unit. It has a wide bandwidth, simple structure, can be deployed on a large scale, and is easy to engineer.
[0052] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0053] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "N" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0054] Any process or method described in the flowchart or otherwise herein can be understood as representing a module, segment, or portion of code comprising one or more N executable instructions for implementing custom logic functions or processes, and the scope of the preferred embodiments of this application includes additional implementations in which functions may be performed not in the order shown or discussed, including substantially simultaneously or in reverse order depending on the functions involved, as should be understood by those skilled in the art to which embodiments of this application pertain.
[0055] The logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (such as a computer-based system, a processor-included system, or other system that can fetch and execute instructions from, an instruction execution system, apparatus, or device). For the purposes of this specification, "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transmit programs for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of computer-readable media include: an electrical connection having one or more wires (electronic device), a portable computer disk drive (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and editable read-only memory (EPROM or flash memory), fiber optic devices, and portable optical disc read-only memory (CDROM). Furthermore, computer-readable media can even be paper or other suitable media on which programs can be printed, because programs can be obtained electronically, for example, by optically scanning the paper or other media, followed by editing, interpreting, or otherwise processing as necessary, and then stored in computer memory.
[0056] It should be understood that the various parts of this application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiments, the N steps or methods can be implemented using software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.
[0057] Those skilled in the art will understand that all or part of the steps of the methods described in the above embodiments can be implemented by a program instructing related hardware, and the program can be stored in a computer-readable storage medium. When executed, the program includes one or a combination of the steps of the method embodiments.
[0058] Furthermore, the functional units in the various embodiments of this application can be integrated into a processing module, or each unit can exist physically separately, or two or more units can be integrated into a module. The integrated module can be implemented in hardware or as a software functional module. If the integrated module is implemented as a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium.
[0059] The storage medium mentioned above can be a read-only memory, a disk, or an optical disk, etc. Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of this application.
Claims
1. A phased array antenna element, characterized in that, include: The system comprises a metal radiating layer, a GaAs-based phase-modulating HEMT, a semi-insulating substrate, a metal reflector, and a via, wherein the metal radiating layer, the phase-modulating HEMT, the semi-insulating substrate, the metal reflector, and the via are all symmetrical along a central axis; the metal radiating layer consists of two symmetrical radiating sheets of a predetermined shape connected together and provided with a groove structure, a DC voltage control line, two symmetrical impedance matching lines, and a T-shaped DC grounding line. The GaAs-based phase-modulated HEMT is integrated into the phased array antenna unit. The symmetrical radiating sheet is a slotted structure consisting of two connected "E" shapes. The through-hole is a tapered through-hole with a top diameter of 40 μm and a bottom diameter of 70 μm. The tapered through-hole is used to enable multi-layer wiring of the control lines of each independently controlled phased array antenna unit. The GaAs-based phase-modulated HEMT is positioned at the center of the symmetrical radiation sheet; The GaAs-based phase-modulated HEMT includes: intrinsic GaAs, intrinsic AlGaAs, doped AlGaAs that provides charge carriers, two ohmic contact patches, and one control gate patch. The DC voltage control line and the T-shaped DC ground line are used to provide control voltage for the GaAs-based phase-modulated HEMT. When the control voltage is 0V, the phase-modulated HEMT is turned on, and the phased array antenna element is in the first state. When the control voltage is -5V, the phase-modulated HEMT is turned off, and the phased array antenna element is in the second state. The phase difference between the first state and the second state is 180°, realizing 1-bit phase modulation, which is used to realize azimuth and elevation two-dimensional scanning in terahertz two-dimensional scanning phased array.
2. The phased array antenna element according to claim 1, characterized in that, The symmetrical radiating plate is rectangular or semi-circular; the thickness of the semi-insulating substrate is 100 μm; the semi-insulating substrate is a GaAs substrate; and the metal reflector is Au.
3. A two-dimensional scanning phased array, characterized in that, Employing the phased array antenna element as described in any one of claims 1-2, the two-dimensional scanning phased array comprises: 2 N Individual units, gold wire bonding wires, DC ground wires for HEMTs connecting each phased array antenna unit, wiring layers individually controlled by each phased array antenna unit, and interfaces for connecting the wave control circuit. Each subarray consists of 16×16 phased array antenna elements, where N is a positive integer. The two-dimensional scanning phased array is used for azimuth and / or elevation two-dimensional scanning.
4. The two-dimensional scanning phased array according to claim 3, characterized in that, Connect the DC ground wires of each adjacent subarray and set gold wire bonding points.
5. The two-dimensional scanning phased array according to claim 3, characterized in that, The gold wire bonding lines include gold wire bonding lines between adjacent subarrays and gold wire bonding lines between the subarrays and the wiring layer, which are used for grounding.
6. The two-dimensional scanning phased array according to claim 3, characterized in that, The wiring layer, which is individually controlled by each phased array antenna unit, is connected to the phased array antenna unit through a preset number of circular ball grid solder points, and is used to independently control the phased array antenna unit.
7. The two-dimensional scanning phased array according to claim 3, characterized in that, The wiring layer controlled individually by the phased array antenna unit is a multi-layer FR-4 board.
8. The two-dimensional scanning phased array according to claim 3, characterized in that, The phase difference between the first state and the second state of the phased array antenna element is 180°.
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