Chemical Vapor Deposition Equipment

Abstract

A chemical vapor deposition apparatus is provided. The chemical vapor deposition apparatus includes: a chamber; a base disposed in the chamber and supporting a substrate having an organic light emitting diode; a back plate disposed above the base and spaced apart from the base by a predetermined distance; and a diffuser disposed between the back plate and the base and providing a deposition gas to the substrate. The back plate includes: a conductive plate; a cooling water pipe embedded in the conductive plate and configured to carry cooling water; and an insulating port disposed on the conductive plate and including a connecting pipe aligned with an inlet and an outlet of the cooling water pipe.

Description

[0001] This application is a divisional application of Chinese patent application No. 201810650227.9, which was submitted to the State Intellectual Property Office on June 22, 2018 and whose invention name is “Chemical Vapor Deposition Equipment and Method for Manufacturing Display Equipment Using the Same”. Technical Field

[0002] Embodiments of the invention relate to a chemical vapor deposition apparatus and a method of manufacturing a display device using the same, and more particularly, to a chemical vapor deposition apparatus using plasma and a method of manufacturing a display device using the same. Background Art

[0003] The manufacturing process of the display device includes a deposition process, a photolithography process, and an etching process for forming a thin layer on the surface of a substrate. For example, the deposition process includes a sputtering deposition process and a chemical vapor deposition (CVD) process. The sputtering deposition process is a physical deposition process in which thin layer particles directly collide with the substrate and are directly adsorbed onto the substrate.

[0004] In the chemical vapor deposition process, a chemical reaction of free radicals can be induced above the substrate, and a thin layer of particles of the reaction product can fall and be adsorbed on the substrate. Specifically, a plasma chemical vapor deposition process using plasma rich in free radicals and high energy can be used as the chemical vapor deposition process. Summary of the invention

[0005] Embodiments of the invention may provide a chemical vapor deposition apparatus capable of preventing leakage of radio frequency (RF) power applied to a back plate.

[0006] Embodiments of the invention may also provide a method of manufacturing a display device capable of uniformly forming an inorganic encapsulation layer on a substrate.

[0007] In one aspect of the invention, a chemical vapor deposition apparatus may include a chamber, a susceptor, a backing plate, a diffuser, and an insulator.

[0008] The base, backing plate, diffuser and insulator may be disposed in a chamber. The temperature in the chamber may be in the range of 80 degrees Celsius to 100 degrees Celsius.

[0009] The base may support the substrate having the organic light emitting diode.

[0010] The back plate may be disposed above the base and may be spaced apart from the base by a predetermined distance. The back plate may receive power having a frequency of 13.56 MHz or greater.

[0011] The diffuser may be disposed between the backing plate and the susceptor and may provide a deposition gas to the substrate. The deposition gas may include monosilane (SiH 4 ), ammonia (NH 3 ), hydrogen (H2 ), nitrous oxide (N 2 O) and nitrogen (N 2 The deposition gas may further include an inert gas.

[0012] The insulator may include a first insulator and a second insulator assembled with the first insulator.

[0013] The first insulator may include a first portion and a second portion, the first portion covering the top surface of the back plate, and the second portion being assembled with the first portion and covering the side wall of the back plate.

[0014] Each of the first part and the second part may include a plurality of assembled blocks.The first part may completely cover the top surface of the back plate.

[0015] The first insulator may include at least one of polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), polyvinylidene fluoride (PVDF), and polyvinyl fluoride (PVF).

[0016] The second insulator may be connected to the chamber and the diffuser. The second insulator may have a frame shape exposing the diffuser, and may include a plurality of assembled blocks.

[0017] The second insulator may include ceramic and may insulate the diffuser from the chamber.

[0018] The back plate may include a conductive plate, a cooling water pipe embedded in the conductive plate and through which cooling water flows, and an insulating port.

[0019] The insulating port may be disposed on a top surface of the conductive plate and may include a connecting pipe aligned with an inlet and an outlet of the cooling water pipe.

[0020] The insulating opening may include plastic, and at least a portion of the insulating opening may be surrounded by the first portion.

[0021] The back plate may further include a supply pipe and a discharge pipe disposed on the insulating opening. The supply pipe may be connected to one of the connecting pipes, and the discharge pipe may be connected to the other of the connecting pipes.

[0022] In another aspect of the invention, a method for manufacturing a display device may include: preparing a substrate having an organic light emitting diode on a base disposed in a first chamber; forming a plasma region between the base and the back plate by applying power to a back plate disposed above the base, the top surface and side walls of the back plate being covered by an insulator; and providing a deposition gas into the plasma region to form a first inorganic thin layer on the organic light emitting diode.

[0023] In the step of forming the plasma region, power having a frequency of 13.56 MHz or more may be applied to the back plate.

[0024] The method may further include forming an organic thin layer on the first inorganic thin layer and forming a second inorganic thin layer on the organic thin layer.

[0025] The first inorganic thin layer and the second inorganic thin layer may be formed in a first chamber, and the organic thin layer may be formed in a second chamber different from the first chamber.

[0026] According to the embodiment of the invention, power leakage from a back plate can be prevented to form uniform plasma in a chamber. Therefore, process time can be reduced and process reliability can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above and other aspects and features of the present invention will become more apparent by further describing exemplary embodiments of the present invention in detail with reference to the accompanying drawings, in which:

[0028] Figure 1 is a schematic cross-sectional view showing a chemical vapor deposition apparatus according to an embodiment of the invention.

[0029] Figure 2 is an exploded perspective view showing a portion of a chemical vapor deposition apparatus according to an embodiment of the invention.

[0030] Figure 3 is a perspective view showing a back plate according to an embodiment of the invention.

[0031] Figure 4 yes Figure 3 An enlarged exploded perspective view of area AA.

[0032] Figure 5 is along Figure 3 A cross-sectional view taken along line II'.

[0033] Figure 6 is an exploded perspective view showing a first insulator according to an embodiment of the invention.

[0034] Figure 7 yes Figure 6 An enlarged internal perspective view of area BB.

[0035] Figure 8 is a perspective view showing a second insulator according to an embodiment of the invention.

[0036] Fig. 9 is along Figure 8 A cross-sectional view taken along line II-II'.

[0037] Fig.10 is a cross-sectional view showing a display device according to an embodiment of the invention. DETAILED DESCRIPTION

[0038] The invention will now be more fully described below with reference to the accompanying drawings showing various embodiments. However, the invention may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. Instead, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art. The same reference numerals refer to the same elements throughout.

[0039] It will be understood that when an element such as a layer, region or substrate is referred to as "on" another element, the element may be directly on the other element, or there may be an intermediate element. On the contrary, the term "directly" means that there is no intermediate element. As used herein, the term "and / or" includes any combination and all combinations of one or more related listed items. The terms used herein are only for the purpose of describing a specific embodiment, rather than being intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular form "one", "a kind of" and "the (the)" are intended to include the plural form containing "at least one (kind / person) in ... ". "Or" means "and / or". It will also be understood that when the term "include" or "includes" and / or its variations are used in this specification, it is explained that there are stated features, regions, wholes, steps, operations, elements and / or components, but it is not excluded that there are or add one or more other features, regions, wholes, steps, operations, elements, components and / or their groups.

[0040] For ease of description, spatial relative terms such as "under ... ", "under ... ", "below ", "above ... ", "above ", etc. can be used here to describe the relationship between an element or feature and another element or feature as shown in the figure. It will be understood that, in addition to the orientation depicted in the figure, the spatial relative terms are intended to include different orientations of the device in use or operation. For example, if the device in the figure is turned over, the element described as "under" or "under" other elements or features will then be positioned as "above" the other elements or features. Therefore, the exemplary term "under ... " can include both above and below. The device can be positioned in addition (rotated 90 degrees or in other orientations), and the spatial relative descriptors used here are interpreted accordingly. It will be understood that although the terms first, second, etc. can be used here to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish an element, component, region, layer or part from another element, component, region, layer or part. Thus, a first element, component, region, layer or portion discussed below may be named a second element, component, region, layer or portion without departing from the teachings herein. "About" or "approximately" as used herein include the stated value and mean within an acceptable range of deviation for a particular value determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0041] Exemplary embodiments are described herein with reference to cross-sectional illustrations and / or plan illustrations as ideal exemplary illustrations. In the figures, the thickness of layers and regions are exaggerated for clarity. Therefore, variations in the shapes of the illustrations, such as those caused by manufacturing techniques and / or tolerances, are expected. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but will include deviations in shapes, such as those caused by manufacturing. For example, an etched region shown as a rectangle will typically have rounded or curved features. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of regions of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0042] Figure 1 is a schematic cross-sectional view showing a chemical vapor deposition apparatus according to an embodiment of the invention.

[0043] According to an embodiment of the invention, the chemical vapor deposition device CVD can be provided as a plasma enhanced chemical vapor deposition (PECVD) device. The chemical vapor deposition device CVD can be used in a semiconductor manufacturing process for manufacturing an integrated circuit device, a display device, or a solar cell on a substrate T. Specifically, the chemical vapor deposition device CVD according to the invention can be used to deposit an inorganic thin layer on a substrate T having an organic light emitting diode.

[0044] Reference Figure 1 The chemical vapor deposition apparatus CVD may include a chamber CB, a susceptor SP, a diffuser GD, a back plate BP, an insulator IS, a gas injection part GI, and a gas exhaust part GEP.

[0045] The chamber CB includes a top surface US, a bottom surface DS, and a side wall SW connecting the top surface US and the bottom surface DS. An internal space surrounded by the top surface US, the bottom surface DS, and the side wall SW may be defined in the chamber CB, and components necessary for the operation of the chemical vapor deposition apparatus CVD may be disposed in the internal space of the chamber CB.

[0046] Specifically, when the chemical vapor deposition apparatus CVD is operated, the inner space of the chamber CB may be sealed from the outside. In this case, the gas injection part GI and the gas exhaust part GEP may block the inflow of external air. In addition, although not shown in the drawings, a portion of the chamber CB may be opened and closed to transfer the substrate T. In this case, a portion of the side wall SW of the chamber CB may be opened and closed.

[0047] The chamber CB may include a conductive material. For example, the chamber CB may include at least one of aluminum, Inconel, and Hastelloy. A portion of the chamber CB may be electrically connected to an external ground terminal GC.

[0048] In an embodiment of the invention, the process of forming an inorganic thin layer on the substrate T having an organic light emitting diode may be performed at a low temperature. For example, the inner space of the chamber CB may be maintained at a temperature of 80 degrees Celsius to 100 degrees Celsius during the process.

[0049] The base SP may support the substrate T. In an embodiment of the invention, an organic light emitting diode may be disposed on the substrate T. The base SP may include a conductive metal material.

[0050] The susceptor SP may include: a first susceptor SP1 supporting a substrate T; and a second susceptor SP2 connected to the first susceptor SP1 and passing through the bottom surface DS of the chamber CB. The substrate T may be disposed on the top surface of the first susceptor SP1. The first susceptor SP1 and the second susceptor SP2 may be separately disposed or may be integrally formed with each other as a single entity. The shapes of the first susceptor SP1 and the second susceptor SP2 may be variously modified according to the components included in the chemical vapor deposition apparatus CVD.

[0051] The first susceptor SP1 may have a quadrangular or circular plate shape for supporting the substrate T. Although not shown in the drawings, the susceptor SP may include a heating wire capable of heating the substrate T and / or a cooling wire capable of cooling the substrate T. The heating wire and / or the cooling wire may be embedded in the first susceptor SP1.

[0052] The second base SP2 may be connected to the central area of ​​the first base SP1 to support the first base SP1. The second base SP2 may have a circular or quadrangular column.

[0053] Specifically, the second pedestal SP2 can be vertically raised or lowered to position the substrate T to the process position. In this case, the first pedestal SP1 can be moved in the same direction as the second pedestal SP2 by the movement of the second pedestal SP2. For example, when the substrate T is transferred from the external space to the internal space of the chamber CB through the side wall SW of the chamber CB, the second pedestal SP2 can be vertically raised. Therefore, the substrate T can be set on the first pedestal SP1. Afterwards, the second pedestal SP2 can be lowered to position the substrate T to the process position.

[0054] The base SP may further include an edge frame EF for fixing a sidewall of the substrate T. The edge frame EF may be positioned to cover an edge of the substrate T.

[0055] The pedestal SP may be connected to the ground terminal GC. In this case, the second pedestal SP2 may be coupled to the bottom surface DS of the chamber CB to be electrically connected to the bottom surface DS.

[0056] The diffuser GD may be disposed above the substrate T and may be disposed between the base SP and the back plate BP. The diffuser GD may be connected to the back plate BP. Although not shown in the drawings, both ends of the diffuser GD may be connected to the back plate BP by screws. However, the embodiments of the invention are not limited thereto. In another embodiment, the diffuser GD may be connected to a bracket and may be fixed to the back plate BP by the bracket.

[0057] A specific space A into which the deposition gas EG is supplied may be defined between the diffuser GD and the back plate BP. The deposition gas EG injected from the gas injection part GI may be provided into the specific space A.

[0058] The diffuser GD may include a metal material of at least one of aluminum, Inconel, and Hastelloy.

[0059] The diffuser GD may transfer the deposition gas EG to the substrate T. A plurality of through-holes D-OP may be defined in the diffuser GD, and the deposition gas EG may be uniformly transferred to the substrate T through the through-holes D-OP.

[0060] The deposition gas EG may include a reaction gas used as a deposition source for depositing an inorganic thin layer on the substrate T having the organic light emitting diode and a stabilizing gas used for adjusting the pressure in the chamber CB.

[0061] In this embodiment, the reaction gas may include monosilane (SiH 4 ), ammonia (NH 3 ) and nitrogen (N 2 ) or monosilane (SiH 4 ), nitrous oxide (N 2 O), ammonia (NH 3 ) and hydrogen (H 2 The stabilizing gas may include an inert gas.

[0062] The back plate BP may be disposed above the susceptor SP and may be spaced apart from the susceptor SP by a predetermined distance. The back plate BP may include a metal material of at least one of aluminum, Inconel, and Hastelloy.

[0063] The back plate BP may be connected to the power supply part PW. Therefore, the back plate BP may receive power supplied from the power supply part PW. The power supply part PW may supply radio frequency power (RF power) of 13.56 MHz or more, and therefore, the back plate BP may receive the RF power.

[0064] The back plate BP is electrically connected to the diffuser GD. RF power applied to the back plate BP may be transmitted to the diffuser GD connected to the back plate BP.

[0065] By applying RF power to the back plate BP, plasma can be formed between the diffuser GD and the susceptor SP. The deposition gas EG can be excited into plasma by the potential difference between the back plate BP and the susceptor SP. Therefore, the product of the chemical reaction of the free radicals and the high-energy plasma can fall and be adsorbed on the surface of the substrate T, so that a thin layer can be deposited on the surface of the substrate T.

[0066] The RF power applied to the back plate BP may be transmitted to the diffuser GD, and the RF power transmitted to the diffuser GD may be transmitted to the susceptor SP. The RF power transmitted to the susceptor SP may be transmitted to the chamber CB. The RF power transmitted to the chamber CB may be transmitted to the ground terminal GC. Therefore, the RF power applied to the back plate BP is not completely transmitted to the diffuser GD and the susceptor SP, but leaks through the chamber CB.

[0067] According to the present embodiment, the insulator IS may prevent the RF power applied to the back plate BP from leaking through the chamber CB. This will be described in more detail later.

[0068] The gas injection portion GI may be provided at the top surface US of the chamber CB. The gas injection portion GI may pass through the top surface US of the chamber CB to be connected to the specific space A.

[0069] The gas exhaust portion GEP may be provided at the bottom surface DS of the chamber CB. The gas exhaust portion GEP may pass through the bottom surface DS of the chamber CB and may exhaust gas provided in the inner space of the chamber CB to the outside of the chamber CB.

[0070] Figure 2 is an exploded perspective view showing a portion of a chemical vapor deposition apparatus according to an embodiment of the invention, Figure 3 is a perspective view showing a back plate according to an embodiment of the invention. Figure 4 yes Figure 3 An enlarged exploded perspective view of area AA, Figure 5 is along Figure 3 Hereinafter, the back plate BP will be described in more detail with reference to the accompanying drawings.

[0071] Reference Figure 1 and Figure 2 The back plate BP may include a conductive plate PL, a cooling water pipe CP and an insulating part ISP.

[0072] The conductive plate PL may include a first conductive plate PL1 and a second conductive plate PL2 disposed under the first conductive plate PL1. The first conductive plate PL1 and the second conductive plate PL2 may be disposed separately from each other or may be integrally formed with each other as a single body.

[0073] Each of the first conductive plate PL1 and the second conductive plate PL2 may have a quadrangular plate shape. In the present embodiment, the area of ​​the second conductive plate PL2 may be smaller than that of the first conductive plate PL1. However, the embodiments of the invention are not limited thereto.

[0074] The cooling water pipe CP may be embedded in the first conductive plate PL1. Therefore, the thickness of the first conductive plate PL1 may be greater than the diameter of the cooling water pipe CP. In the present embodiment, cooling water may be supplied to the cooling water pipe CP to adjust the temperature of the back plate BP and the temperature of the diffuser GD connected to the back plate BP. Therefore, damage to the back plate BP and the diffuser GD caused by heating can be minimized.

[0075] In this embodiment, the cooling water pipe CP is embedded in the first conductive plate PL1. However, the embodiments of the invention are not limited thereto. In another embodiment, the cooling water pipe CP may be embedded in the second conductive plate PL2. In this case, the thickness of the second conductive plate PL2 may be greater than the diameter of the cooling water pipe CP.

[0076] Reference Figures 1 to 5 The cooling water pipe CP may have an inlet CP-I through which cooling water is injected and an outlet CP-O from which cooling water is discharged. The inlet CP-I of the cooling water pipe CP may be one end of the cooling water pipe CP, and the outlet CP-O of the cooling water pipe CP may be the other end of the cooling water pipe CP opposite to the one end.

[0077] The insulating portion ISP may be disposed on the first conductive plate PL1 to supply cooling water into the cooling water pipe CP and / or to discharge cooling water from the cooling water pipe CP. The insulating portion ISP may include an insulating port PT1 and a conductive port PT2.

[0078] The insulating port PT1 may be fixed on the top surface PL1-U of the first conductive plate PL1. The insulating port PT1 may include a connecting pipe aligned with the inlet CP-I and the outlet CP-O of the cooling water pipe CP. The connecting pipe may include a first connecting pipe CL1 connected to the inlet CP-I of the cooling water pipe CP and a second connecting pipe CL2 connected to the outlet CP-O of the cooling water pipe CP.

[0079] The insulating hole PT1 may include plastic. Therefore, the insulating hole PT1 can insulate the first conductive plate PL1 and the conductive hole PT2 from each other. In the present embodiment, since the insulating hole PT1 is disposed on the top surface PL1-U of the first conductive plate PL1, it is possible to prevent the RF power applied to the back plate BP from leaking through the conductive hole PT2.

[0080] The conducting port PT2 may include a supply pipe SPP, an exhaust pipe EP, and a coupling portion SEP.

[0081] The supply pipe SPP may be positioned between a cooling water supply part (not shown) and the first connection pipe CL1 of the insulating port PT1 , and may transfer cooling water provided from the cooling water supply part to the cooling water pipe CP through the insulating port PT1 .

[0082] The discharge pipe EP may be positioned between a cooling water supply part (not shown) and the second connection pipe CL2 of the insulating port PT1 , and may discharge cooling water discharged through the cooling water pipe CP and the insulating port PT1 to the outside of the chamber CB.

[0083] The supply pipe SPP and the exhaust pipe EP may be fixed at the coupling portion SEP and may be coupled to the insulating port PT1. The supply pipe SPP and the exhaust pipe EP may be spaced apart from each other by a certain distance and may pass through the coupling portion SEP. In the present embodiment, the supply pipe SPP, the exhaust pipe EP, and the coupling portion SEP may include a metal material.

[0084] In the present embodiment, the insulating part ISP may prevent the RF power applied to the back plate BP from leaking, and thus plasma may be uniformly formed in the chamber CB. Therefore, the process time may be reduced, and the process reliability may be improved.

[0085] Figure 6 is an exploded perspective view showing a first insulator according to an embodiment of the invention, Figure 7 yes Figure 6 An enlarged internal perspective view of area BB. Figure 8 is a perspective view showing a second insulator according to an embodiment of the invention, Fig. 9 is along Figure 8 Hereinafter, an insulator IS according to an embodiment of the invention will be described with reference to the accompanying drawings.

[0086] Reference Figure 1 and Figure 2 , the insulator IS can insulate the back plate BP and the diffuser GD from the chamber CB.

[0087] The insulator IS may include a first insulator IS1 and a second insulator IS2 .

[0088] The first insulator IS1 may include at least one of polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), polyvinylidene fluoride (PVDF), and polyvinyl fluoride (PVF).

[0089] The first insulator IS1 may include a first portion P1 covering the top surface of the back plate BP and a second portion P2 covering the sidewall of the back plate BP.

[0090] The first portion P1 may cover the top surface PL1-U of the first conductive plate PL1. The first portion P1 may completely cover the top surface PL1-U of the first conductive plate PL1. In the present embodiment, the first portion P1 may cover the remaining portion of the top surface PL1-U of the first conductive plate PL1 except for the region on which the insulating portion ISP is positioned.

[0091] In the present embodiment, the hole HO may be provided in the first part P1 at a position corresponding to the insulating part ISP. The insulating part ISP may pass through the hole HO and may be provided on the same plane as the first part P1. At least a portion of the insulating part ISP that passes through the hole HO may be surrounded by the first part P1. In the present embodiment, at least a portion of the insulating opening PT1 of the insulating part ISP may be surrounded by the first part P1, for example, the insulating opening PT1 of the insulating part ISP may be completely surrounded by the first part P1.

[0092] Since the first portion P1 completely covers the top surface of the back plate BP, it is possible to prevent the RF power applied to the back plate BP from leaking to the chamber CB via the top surface PL1 -U of the first conductive plate PL1 .

[0093] Reference Figure 6 The protrusion PR may be disposed at an edge of the first portion P1 and may be assembled with the second portion P2. The protrusion PR may be disposed in plural, and the protrusions PR may be spaced apart from each other by a certain interval along the edge of the first portion P1.

[0094] The first part P1 may include a plurality of assembled blocks P1-B. Each of two blocks A1 and A2 assembled to each other among the plurality of blocks P1-B may have a contact surface having a curved shape, and the contact surfaces of the two blocks A1 and A2 may contact each other to overlap each other in a plan view. Therefore, it is possible to suppress or prevent leakage of RF power applied to the back plate BP by the first part P1.

[0095] Reference Figure 2 and Figure 6 , the second portion P2 may have a frame shape. The second portion P2 may include a first side wall portion P2-1 and a second side wall portion P2-2, the first side wall portion P2-1 covering the first side wall PL1-S of the first conductive plate PL1, and the second side wall portion P2-2 covering the second side wall PL2-S of the second conductive plate PL2. In addition, the second portion P2 may further include a frame portion P2-3 connecting the first side wall portion P2-1 and the second side wall portion P2-2 to each other. The bottom surface PL1-B of the first conductive plate PL1 connecting the first side wall PL1-S and the second side wall PL2-S to each other may be disposed on the frame portion P2-3.

[0096] The engaging portion PR-I engaged with the protrusion PR of the first portion P1 may be provided at the first sidewall portion P2-1. The engaging portion PR-I may be a step portion formed in the first sidewall portion P2-1 to correspond to the shape and position of the protrusion PR.

[0097] The second sidewall portion P2-2 may extend to further cover the sidewall of the diffuser GD. The second sidewall portion P2-2 may be assembled with the second insulator IS2. An end of the second sidewall portion P2-2 may have a stepped shape.

[0098] In this embodiment, since the second portion P2 completely covers the side wall of the back plate BP, it is possible to prevent the RF power applied to the back plate BP from leaking to the chamber CB via the first side wall PL1-S and bottom surface PL1-B of the first conductive plate PL1 and the second side wall PL2-S of the second conductive plate PL2.

[0099] Reference Figure 6 and Figure 7 , the second part P2 may include a plurality of assembled blocks P2-B. Each of two blocks B1 and B2 assembled to each other among the plurality of blocks P2-B may have a contact surface having a curved shape, and the contact surfaces of the two blocks B1 and B2 may contact each other to overlap each other in a plan view. Therefore, it is possible to suppress or prevent the leakage of RF power applied to the back plate BP by the second part P2.

[0100] Since each of the first portion P1 and the second portion P2 includes a plurality of assembled pieces, the first portion P1 and the second portion P2 may be easily coupled to the back plate BP having a wide area.

[0101] Reference Figure 1 , Figure 8 and Fig. 9 , the second insulator IS2 may insulate the diffuser GD from the chamber CB. The second insulator IS2 may have a frame shape disposed along the sidewall of the diffuser GD and exposing the bottom surface of the diffuser GD. The second insulator IS2 may be assembled with the sidewall of the diffuser GD.

[0102] The second insulator IS2 may be disposed below the first insulator IS1 and may be assembled with the first insulator IS1. The second insulator IS2 may be assembled with the second sidewall portion P2-2 of the first insulator IS1. The second insulator IS2 may cover an end of the second sidewall portion P2-2 to prevent the deposition gas EG from contacting the first insulator IS1.

[0103] The second insulator IS2 may include a plurality of assembled pieces. Since the second insulator IS2 includes a plurality of assembled pieces, the second insulator IS2 may be easily coupled to the diffuser GD having a wide area.

[0104] Each of the two blocks B3 and B4 assembled to each other among the plurality of blocks of the second insulator IS2 may have a contact surface having a curved shape, and the contact surfaces of the two blocks B3 and B4 may contact each other to overlap each other in a plan view. Therefore, it is possible to suppress or prevent the leakage of RF power applied to the back plate BP and the diffuser GD through the second insulator IS2.

[0105] The second insulator IS2 may include ceramics. Therefore, the second insulator IS2 may minimize or prevent damage to the first insulator IS1 that may be caused by the deposition gas EG and heat.

[0106] Fig.10 1 is a cross-sectional view showing a display device according to an embodiment of the invention. A method for manufacturing a display device DD using a chemical vapor deposition device CVD according to an embodiment of the invention will be described with reference to the accompanying drawings. For the purpose of easy and convenient description, the same description as in the above embodiment will be omitted.

[0107] Reference Figure 1 and Fig.10 , in the method of manufacturing the display device DD according to the embodiment of the invention, a thin film encapsulation layer TFE may be formed on the substrate T having the base member BSM, the circuit layer CL, and the display layer DPL.

[0108] The base member BSM may include a display area DA provided with an image and a non-display area NDA adjacent to the display area DA. The base member BSM may include a base layer SUB and a buffer layer BFL.

[0109] The base layer SUB may be a flexible substrate, and may include a plastic substrate, a glass substrate, a metal substrate, or an organic / inorganic composite substrate. The buffer layer BFL may include at least one of silicon oxide and silicon nitride.

[0110] exist Fig.10 In the embodiment, a buffer layer BFL corresponding to the example of the functional layer is provided on the surface of the base layer SUB. However, the embodiments of the invention are not limited thereto. In another embodiment, a barrier layer may be provided on the base layer SUB as the functional layer. Alternatively, the buffer layer BFL may be omitted in a display device according to another embodiment of the invention.

[0111] The circuit layer CL may include a thin film transistor TR and at least one insulating layer.

[0112] A semiconductor pattern OSP of a thin film transistor TR is disposed on the base layer SUB. The semiconductor pattern OSP may include one selected from the group consisting of amorphous silicon, polysilicon, and a metal oxide semiconductor. The insulating layer may include a first insulating layer 10 and a second insulating layer 20.

[0113] A first insulating layer 10 is disposed on the base layer SUB to cover the semiconductor pattern OSP. The first insulating layer 10 may include an organic layer and / or an inorganic layer. In an embodiment, the first insulating layer 10 may include a plurality of inorganic thin layers. The plurality of inorganic thin layers may include a silicon nitride layer and a silicon oxide layer.

[0114] A control electrode GE of the thin film transistor TR is disposed on the first insulating layer 10. A second insulating layer 20 is disposed on the first insulating layer 10, and the second insulating layer 20 covers the control electrode GE. The second insulating layer 20 includes an organic layer and / or an inorganic layer. In an embodiment, the second insulating layer 20 may include a plurality of inorganic thin layers. The plurality of inorganic thin layers may include a silicon nitride layer and a silicon oxide layer. The second insulating layer 20 may include a material different from that of the first insulating layer 10.

[0115] An input electrode SE and an output electrode DE of the thin film transistor TR are disposed on the second insulating layer 20. A plurality of signal lines may be disposed on the second insulating layer 20.

[0116] The third insulating layer 30 may be disposed on the second insulating layer 20 to cover the input electrode SE and the output electrode DE. The third insulating layer 30 includes an organic layer and / or an inorganic layer. In an embodiment, the third insulating layer 30 may include an organic material to provide a flat surface.

[0117] A display layer DPL is disposed on the third insulating layer 30. In more detail, a pixel defining layer PDL and an organic light emitting diode OLED are disposed on the third insulating layer 30. An anode AE ​​is disposed on the third insulating layer 30. The anode AE ​​is connected to the output electrode DE through a through hole passing through the third insulating layer 30. A light emitting area OP is defined in the pixel defining layer PDL. The light emitting area OP of the pixel defining layer PDL exposes at least a portion of the anode AE.

[0118] The light emitting unit EU is disposed on the anode AE. The cathode CE is disposed on the light emitting unit EU. The anode AE, the light emitting unit EU and the cathode CE may constitute an organic light emitting diode OLED. Although not shown in the drawings, the light emitting unit EU may include a hole control layer, an organic light emitting layer and an electron control layer.

[0119] The thin film encapsulation layer TFE may include a first inorganic thin layer IL1 , an organic thin layer OL, and a second inorganic thin layer IL2 sequentially stacked on the display layer DPL.

[0120] In this embodiment, a substrate T having a display layer DPL is prepared on a susceptor SP disposed in a chamber CB. Then, a plasma region is formed on the substrate T, and a deposition gas EG is supplied into the plasma region to form a first inorganic thin layer IL1 on the display layer DPL.

[0121] Deposition gas EG necessary for deposition is injected into the chamber CB, and RF power is applied to the back plate BP to form a portion of the deposition gas EG into a gas in a plasma state (hereinafter, referred to as 'plasma'). In this embodiment, the RF power may have a frequency of about 13.56 MHz or more.

[0122] Since the plasma reduces the activation energy of the deposition gas EG, the deposition gas EG can be in an excited state at a low temperature. The deposition gas EG in an excited state may include metastable atoms or molecules that are divided into highly reactive ions and free radicals. Therefore, compared with the conventional chemical vapor deposition method, the plasma enhanced chemical vapor deposition method can form a thin layer at a lower temperature.

[0123] Metastable atoms or molecules may be adsorbed on the substrate T to form the first inorganic thin layer IL1. Metastable atoms or molecules may be redistributed on the surface of the substrate T and may undergo physical and chemical reactions on the surface of the substrate T. Metastable atoms or molecules are deposited on the substrate T while migrating to the most stable site and forming new bonds.

[0124] In this embodiment, a first inorganic thin layer IL1 is formed on the cathode CE.

[0125] The organic thin layer OL may be formed on the first inorganic thin layer IL1. The first inorganic thin layer IL1 and the organic thin layer OL may be formed in different chambers from each other.

[0126] A second inorganic thin layer IL2 may be formed on the organic thin layer OL. At this time, the second inorganic thin layer IL2 may be formed in the same chamber CB as the first inorganic thin layer IL1 by the same manufacturing process as the first inorganic thin layer IL1. In the present embodiment, the thin film encapsulation layer TFE includes the first inorganic thin layer IL1, the organic thin layer OL, and the second inorganic thin layer IL2. However, the embodiments of the invention are not limited thereto. In some embodiments, the thin film encapsulation layer TFE may include a plurality of inorganic thin layers and a plurality of organic thin layers.

[0127] According to the embodiment of the invention, the RF power can be prevented from leaking from the back plate BP to form uniform plasma in the chamber CB. Therefore, the process time can be reduced and the process reliability can be improved.

[0128] Although the invention has been described with reference to example embodiments, it will be clear to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Therefore, it should be understood that the above embodiments are not restrictive but illustrative. Therefore, the scope of the invention will be determined by the broadest permissible interpretation of the claims and their equivalents, and should not be limited or restricted by the above description.

Claims

1. A chemical vapor deposition device, comprising: room; a base disposed in the chamber and supporting the substrate having the organic light emitting diode; a back plate, disposed above the base and spaced apart from the base by a predetermined distance; as well as a diffuser disposed between the backing plate and the susceptor and providing a deposition gas to the substrate, The back plate includes: a conductive plate; a cooling water pipe embedded in the conductive plate and configured to carry cooling water; and an insulating portion, the insulating portion including an insulating port and a conductive port, the insulating port being disposed on the conductive plate and including a connecting pipe aligned with an inlet and an outlet of the cooling water pipe, Wherein, the conductive plate does not pass through the insulating opening, Wherein, the insulating opening is arranged between the conductive plate and the conductive opening.

2. The chemical vapor deposition apparatus according to claim 1, further comprising a supply pipe and an exhaust pipe arranged on the insulating port, in, The supply pipe is connected to one of the connection pipes, and the discharge pipe is connected to the other of the connection pipes, and The insulating port insulates the supply pipe and the discharge pipe from the cooling water pipe.

3. The chemical vapor deposition device according to claim 2, further comprising a bonding portion disposed on the insulating opening, in, The supply pipe and the discharge pipe are fixed at the coupling portion, are spaced apart from each other, and pass through the coupling portion to be connected to the connection pipe.

4. The chemical vapor deposition apparatus according to claim 3, wherein: The supply pipe, the discharge pipe, and the coupling portion each include a metal material.

5. The chemical vapor deposition apparatus according to claim 1, wherein: The insulating opening comprises plastic.

6. The chemical vapor deposition apparatus according to claim 1, further comprising: a first insulator, covering the top surface and side walls of the conductive plate and surrounding the insulating opening; as well as A second insulator is assembled with the first insulator and connected to the chamber and the diffuser.

7. The chemical vapor deposition apparatus according to claim 1, wherein: The diffuser is electrically connected to the backing plate, and a specific space to which the deposition gas is supplied is defined between the diffuser and the backing plate.

8. The chemical vapor deposition apparatus according to claim 1, wherein: The conductive plate includes a first conductive plate and a second conductive plate disposed below the first conductive plate, and The cooling water pipe is embedded in the first conductive plate or the second conductive plate.

9. The chemical vapor deposition apparatus according to claim 8, wherein: The first conductive plate and the second conductive plate are formed integrally with each other.

10. The chemical vapor deposition apparatus according to claim 8, wherein: An area of ​​the first conductive plate is greater than an area of ​​the second conductive plate.

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