Semiconductor processing apparatus

Abstract

This application discloses a semiconductor process apparatus, relating to the field of semiconductor technology. The apparatus includes a process chamber, a dielectric window, a radio frequency (RF) chamber, and a gas flow introduction device. The dielectric window is located above the process chamber, and the RF chamber is also located above the process chamber, with the dielectric window facing inwards. The RF chamber has a vent. Under the action of the gas flow introduction device, external gas enters the RF chamber through the vent and flows downwards through the RF chamber towards the temperature-controlled gas flow of the dielectric window. The sidewall of the RF chamber has heat dissipation holes. With this configuration, even under high-power RF conditions, the semiconductor process apparatus can rapidly cool the dielectric window to a suitable temperature range.

Description

Technical Field

[0001] This application belongs to the field of semiconductor technology, specifically relating to a semiconductor process equipment. Background Technology

[0002] Semiconductor etching equipment is an important type of semiconductor process equipment used in semiconductor manufacturing.

[0003] Semiconductor etching equipment includes a process chamber, a dielectric window, and coils. The coils are located outside the process chamber, while the dielectric window is positioned at the top of the process chamber. During operation, the coils, under the influence of an excitation source, generate an electromagnetic field of a specific frequency. This electromagnetic field enters the process chamber through the dielectric window, ionizing the gas inside the chamber into plasma. The plasma then processes the wafer within the process chamber. The dielectric window is heated by the plasma. Due to the relatively large thickness of the dielectric window, a significant temperature gradient exists after heating, leading to internal stress and, over time, fatigue cracking.

[0004] In related technologies, to effectively control the temperature uniformity of the medium window, a heating device is installed outside the process chamber to heat the medium window. This heating device can be an annular heating belt that wraps around the outer circumference of the medium window, directly heating it when energized. Alternatively, the heating device can include a circulating heating system formed by an air heater, an air amplifier, and a pipeline. The outlet end of the pipeline corresponds to the outer surface of the medium window. Both the air heater and the air amplifier are located within the pipeline. The air amplifier introduces gas into the pipeline, which is then heated by the air heater and flows into the outer surface of the medium window to heat it. Alternatively, both of these heating devices can be combined to heat the medium window. Furthermore, the medium window is equipped with a temperature sensor, and the energization of the annular heating belt and / or the air heater is controlled based on the temperature detected by the temperature sensor.

[0005] The above solution can maintain the dielectric window within the range of 100℃-120℃ under standby conditions. However, under high-power RF conditions, due to the rapid heating rate of the dielectric window, it will heat up to 140℃ in a very short time, which is much higher than the temperature value under standby conditions. This requires the cooling rate of the dielectric window to be greater than the heating rate in order to maintain temperature stability. The above solution cannot meet the temperature control requirements under high-power RF conditions. Summary of the Invention

[0006] The purpose of this application is to provide a semiconductor process apparatus that can solve the problem that related technologies cannot meet the temperature control requirements of the dielectric window under high-power radio frequency conditions.

[0007] This application provides a semiconductor process apparatus, including:

[0008] A process chamber and a medium window, wherein the medium window is located above the process chamber;

[0009] A radio frequency (RF) chamber is disposed above the process chamber, with the dielectric window facing the interior of the RF chamber, and the RF chamber is provided with a vent.

[0010] An airflow introduction device is provided, under the action of which external gas enters the radio frequency cavity through the vent and generates a temperature-controlled airflow that flows from top to bottom toward the dielectric window in the radio frequency cavity. The side wall of the radio frequency cavity is provided with heat dissipation holes.

[0011] In this embodiment, an airflow introduction device allows for the rapid introduction of gas into the RF cavity. The gas flows downwards within the RF cavity towards the dielectric window, carrying away heat from the window and thus cooling it to meet the temperature uniformity requirements. Simultaneously, the heat-carrying gas is exhausted out of the RF cavity through heat dissipation holes. Therefore, even under high-power RF conditions, this semiconductor process equipment can rapidly cool the dielectric window to a suitable temperature range.

[0012] Moreover, when hot gas is introduced into the RF cavity by the airflow introduction device, the hot gas can also flow from top to bottom into the dielectric window in the RF cavity to heat the entire outer surface of the dielectric window, which can also meet the dielectric window's requirement for temperature control uniformity. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the structure of the semiconductor process equipment disclosed in the embodiments of this application;

[0014] Figure 2 This is a top view of the semiconductor process equipment disclosed in the embodiments of this application;

[0015] Figure 3 This is a top view of a portion of the semiconductor process equipment structure disclosed in an embodiment of this application;

[0016] Figure 4 This is a schematic diagram showing the cooperation between the static pressure chamber and the airflow introduction device disclosed in the embodiments of this application;

[0017] Figure 5 This is a schematic diagram of the structure of the air amplifier disclosed in the embodiments of this application;

[0018] Figure 6 This is a schematic diagram of the structure of the filter cover disclosed in the embodiments of this application;

[0019] Figure 7 This is a schematic diagram of the static pressure chamber disclosed in another embodiment of this application;

[0020] Figure 8 This is a schematic diagram of the structure of a semiconductor process equipment disclosed in another embodiment of this application (with the addition of a guide cylinder);

[0021] Figure 9 This is a schematic diagram of the structure of the guide tube disclosed in the embodiments of this application;

[0022] Figure 10 This is a cross-sectional view of the guide tube disclosed in the first embodiment of this application;

[0023] Figure 11 This is a cross-sectional view of the guide tube disclosed in the second embodiment of this application;

[0024] Figure 12 This is a cross-sectional view of the guide tube disclosed in the third embodiment of this application;

[0025] Figure 13 This is a cross-sectional view of the guide tube disclosed in the fourth embodiment of this application;

[0026] Figure 14 This is a schematic diagram showing the cooperation between the first heating device, the second heating device, and the medium window disclosed in the embodiments of this application;

[0027] Figure 15 This is a schematic diagram of an airflow control structure disclosed in an embodiment of this application;

[0028] Figure 16 This is a schematic diagram of an airflow control structure disclosed in another embodiment of this application.

[0029] Explanation of reference numerals in the attached figures:

[0030] 100-Process Chamber

[0031] 200-Media Window

[0032] 300 - Radio frequency chamber, 310 - First vent, 320 - Second vent, 330 - Heat dissipation hole, 331 - First heat dissipation hole, 332 - Second heat dissipation hole

[0033] 400 - Static pressure chamber, 410 - Air inlet, 420 - Exhaust port, 421 - First exhaust port, 422 - Second exhaust port

[0034] 500 - Airflow inlet device, 510 - Air source, 511 - First air source, 512 - Second air source, 520 - Air amplifier, 521 - First air amplifier, 522 - Second air amplifier, a - Compressed gas inlet, b - Airflow inlet, c - Airflow outlet, d - Annular cavity, e - Airflow channel

[0035] 600 - Filter cover, 610 - Filter body, 611 - Filter holes, 620 - Edge, 621 - Mounting holes

[0036] 700-Airflow Guide Cylinder

[0037] 811-Connecting pipeline, 812-Switch valve, 813-First pressure regulating valve, 814-Second pressure regulating valve, 815-First flow meter, 816-Second flow meter

[0038] 821-First pipeline, 822-Second pipeline, 823-Third pipeline, 824-First switching valve, 825-Second switching valve, 826-Third switching valve, 827-Third pressure regulating valve, 828-Third flow meter, 829-Fourth flow meter, 830-Fourth pressure regulating valve

[0039] 911 - First gas supply line, 912 - First air heater, 913 - Third air amplifier, 914 - First annular chamber

[0040] 921 - Second gas supply line, 922 - Second air heater, 923 - Fourth air amplifier, 924 - Second annular chamber. Detailed Implementation

[0041] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0042] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0043] The semiconductor process equipment provided in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0044] refer to Figures 1-16The semiconductor process equipment disclosed in this application includes a process chamber 100, a dielectric window 200, a radio frequency (RF) chamber 300, and a gas flow introduction device 500. The process chamber 100 provides a location for processing semiconductors, which can be wafers. The dielectric window 200 can be a dielectric window made of dielectric materials such as quartz or ceramic. The RF chamber 300 contains a coil that, under the action of an excitation source, generates an electromagnetic field of a specific frequency. This electromagnetic field enters the process chamber 100 through the dielectric window 200, ionizing the gas within the process chamber 100 into plasma. The plasma then processes the wafers within the process chamber 100.

[0045] The dielectric window 200 is located above the process chamber 100. Specifically, the top wall of the process chamber 100 has an opening, and the dielectric window 200 is located at the opening. The radio frequency chamber 300 is located above the process chamber 100, with the dielectric window 200 facing the interior of the radio frequency chamber 300. The radio frequency chamber 300 has a vent.

[0046] An airflow introduction device 500 is used to introduce gas into the radio frequency (RF) chamber 300. Under the action of the airflow introduction device 500, external gas enters the RF chamber 300 through the vent, and a temperature-controlled airflow is generated in the RF chamber 300, flowing from top to bottom towards the dielectric window 200, so that the gas and the dielectric window 200 can exchange heat. Optionally, the airflow introduction device 500 can be a gas source 510 or a fan. The fan generates negative pressure by rotating, thereby drawing external gas into the RF chamber 300. Since the gas exchanges heat with the dielectric window 200, the heat of the dielectric window 200 is ultimately left in the air and needs to be dissipated in time. Otherwise, the heat in the air will affect the coils and other components in the RF chamber 300. Therefore, heat dissipation holes 330 are provided on the side wall of the RF chamber 300 to dissipate heat and prevent the temperature inside the RF chamber 300 from becoming too high and affecting the coils.

[0047] In the embodiments of this application, gas can be rapidly introduced into the RF chamber 300 via the airflow introduction device 500. The gas flows downwards from top to bottom into the dielectric window 200, carrying away heat from the dielectric window 200 to cool it down and meet its temperature uniformity requirements. Simultaneously, the heat-carrying gas is exhausted from the RF chamber 300 through the heat dissipation hole 330. Therefore, even under high-power RF conditions, this semiconductor process equipment can rapidly cool the dielectric window 200 to a suitable temperature range.

[0048] Furthermore, when the airflow introduction device 500 introduces hot gas into the radio frequency chamber 300, the hot gas can flow from top to bottom into the dielectric window 200 within the radio frequency chamber 300 to heat the entire outer surface of the dielectric window 200, which can also meet the requirement of the dielectric window 200 for temperature uniformity.

[0049] In an optional embodiment, the airflow introduction device 500 can be directly connected to the radio frequency chamber 300. Alternatively, the semiconductor process chamber may also include a static pressure chamber 400, where the airflow introduction device 500 introduces gas into the static pressure chamber 400, providing a space for gas diffusion and thorough mixing. Specifically, the static pressure chamber 400 is provided with an air inlet 410, and the airflow introduction device 500 is disposed within the static pressure chamber 400. In this case, under the action of the airflow introduction device 500, external gas enters the static pressure chamber 400 through the air inlet and diffuses within the static pressure chamber 400. The static pressure chamber 400 is also provided with an exhaust port 420, which communicates with a vent. Optionally, the static pressure chamber 400 can be disposed within or outside the radio frequency chamber 300.

[0050] In this embodiment, after the external gas is introduced into the static pressure chamber 400, it diffuses within the static pressure chamber 400 using the static pressure chamber effect, so that the interior of the static pressure chamber 400 is in a positive pressure state. Since the exhaust port 420 is connected to the vent, that is, the static pressure chamber 400 and the radio frequency chamber 300 are connected, the gas that finally flows out of the exhaust port 420 can directly flow into the radio frequency chamber 300, realizing a top-down flow.

[0051] In an optional embodiment, the RF chamber 300 is connected between the process chamber 100 and the static pressure chamber 400. Specifically, the process chamber 100, the RF chamber 300, and the static pressure chamber 400 are arranged vertically in sequence. An exhaust port 420 is located on the bottom wall of the static pressure chamber 400, and a vent is located on the top wall of the RF chamber 300. The vent is opposite to the dielectric window 200, and the exhaust port 420 is opposite to the vent. Thus, after the gas flows out of the exhaust port 420, it flows directly vertically towards the dielectric window 200, ensuring sufficient contact between the gas and the dielectric window 200, thereby improving the temperature control effect of the dielectric window 200.

[0052] In an optional embodiment, the exhaust port 420 includes a first exhaust port 421 and a second exhaust port 422. The distance between the first exhaust port 421 and the center of the medium window 200 is less than the distance between the second exhaust port 422 and the center of the medium window 200. Optionally, the bottom wall of the static pressure chamber 400 includes a first central region and a first edge region. Multiple first exhaust ports 421 are formed in the first central region, and multiple second exhaust ports 422 are formed in the first edge region. Vents are respectively connected to the first exhaust ports 421 and the second exhaust ports 422. Optionally, the vents include a first vent 310 and a second vent 320. The first vent 310 is opposite to and connected to the first exhaust port 421, and the second vent 320 is opposite to and connected to the second exhaust port 422.

[0053] Optionally, the top wall of the RF chamber 300 can be connected to the bottom wall of the hydrostatic chamber 400. The top wall of the RF chamber 300 includes a second central region and a second edge region. The second central region has multiple first vents 310, and the second edge region has multiple second vents 320. The first vents 310 are connected to the first exhaust ports 421 one-to-one, and the second vents 320 are connected to the second exhaust ports 422 one-to-one. In this way, the gas flowing out of the first exhaust port 421 can flow into the RF chamber 300 through the first vents 310, and the gas flowing out of the second exhaust ports 422 can flow into the RF chamber 300 through the second vents 320. Thus, the gas in the RF chamber 300 forms a temperature-controlled airflow flowing from top to bottom towards the dielectric window 200.

[0054] In this embodiment, the bottom wall of the static pressure chamber 400 includes a left side region and a right side region. The left side region and the right side region are arranged side by side in a direction parallel to the medium window 200. Both the left side region and the right side region are provided with multiple first exhaust ports 421 and multiple second exhaust ports 422. The minimum distance between the exhaust ports 420 in the left side region and the exhaust ports 420 in the right side region is greater than a preset distance value, so that the exhaust ports 420 in the left side region and the exhaust ports 420 in the right side region are separated by a certain distance. This allows space to be reserved between the left side region and the right side region for installing other components. At the same time, it avoids too many openings, which would affect the strength of the static pressure chamber 400.

[0055] Optionally, the first central region and the first edge region can both be opposite to the central region of the medium window 200, and the second central region and the second edge region can both be opposite to the central region of the medium window 200. Since the gas will diffuse in all directions after flowing out of the exhaust port 420 and the vent, even if the exhaust port 420 and the vent are opposite to the central region of the medium window 200, the gas will have diffused to the edge region of the medium window 200 when it finally flows to the medium window 200. Therefore, the airflow can fully contact the entire outer surface of the medium window 200.

[0056] Optionally, the flow area of ​​the first vent 310 can be equal to the flow area of ​​the second vent 320, and the flow area of ​​the first exhaust port 421 can be equal to the flow area of ​​the second exhaust port 422. The gas flow rate from the first exhaust port 421 and the first vent 310 is the same as the gas flow rate from the second exhaust port 422 and the second vent 320. However, the semiconductor process equipment also includes a heating device for heating the central region of the dielectric window 200. Alternatively, due to other factors, the temperature of the central region of the dielectric window 200 may be high. If the gas flow rate from the first exhaust port 421 and the first vent 310 is the same as the gas flow rate from the second exhaust port 422 and the second vent 320, it is impossible to avoid the situation where the temperature of the central region of the dielectric window 200 is high if the overall outer surface of the dielectric window 200 is uniformly heated or cooled by the gas.

[0057] Therefore, in one embodiment, combined with Figure 3 and Figure 4 As shown, the flow area of ​​the first exhaust port 421 is larger than that of the second exhaust port 422, and the flow area of ​​the first vent 310 is larger than that of the second vent 320. Therefore, the gas flow rate from the first exhaust port 421 and the first vent 310 is greater than the gas flow rate from the second exhaust port 422 and the second vent 320. This increases the gas flow rate to the central region of the medium window 200, resulting in a better cooling effect in the central region than in the edge region. This reduces the temperature difference between the central and edge regions of the medium window 200, preventing the central region from becoming too hot. Of course, if the gas flowing from the static pressure chamber 400 to the medium window 200 is hot air, the hot air flow rate in the central region of the medium window 200 can be increased specifically, further facilitating temperature control.

[0058] In this embodiment, the diameters of the first exhaust port 421 and the first vent 310 are equal, and the diameters of the first exhaust port 421 and the first vent 310 can be 15mm-20mm; the diameters of the second exhaust port 422 and the second vent 320 are equal, and the diameters of the second exhaust port 422 and the second vent 320 can be 10mm-12mm.

[0059] In one embodiment, such as Figure 1As shown, multiple heat dissipation holes 330 are provided on the sidewalls of the RF chamber 300 in the direction surrounding the dielectric window 200 and in the arrangement direction of the process chamber 100 and the RF chamber 300. In the arrangement direction of the process chamber 100 and the RF chamber 300, the heat dissipation hole 330 closest to the vent is the first heat dissipation hole 331, and the heat dissipation hole 330 farthest from the vent is the second heat dissipation hole 332. That is, the heat dissipation hole 330 with the highest position among the multiple heat dissipation holes 330 is the first heat dissipation hole 331, and the heat dissipation hole with the lowest position is the second heat dissipation hole 332. Optionally, the distance between the first heat dissipation hole 331 and the vent can be less than a preset distance value. However, because the distance between the first heat dissipation hole 331 and the vent is small, the gas flowing out of the exhaust port 420 and the vent will not reach the dielectric window 200 in time and will be dissipated into the external environment through the first heat dissipation hole 331, which significantly reduces the temperature control effect of the dielectric window 200.

[0060] Therefore, in another embodiment, the distance between the first heat dissipation hole 331 and the vent is greater than a preset distance value. Here, the distance between the first heat dissipation hole 331 and the vent refers to their vertical distance. In other words, in the vertical direction, the highest heat dissipation hole 330 is at a certain distance from the vent, ensuring they are not too close. This prevents gas from flowing out of the vent and being directly dissipated into the external environment through the first heat dissipation hole 331, ensuring the gas flows to the medium window 200 and improving the control effect on the medium window 200. Furthermore, the second heat dissipation hole 332 faces the outer peripheral surface of the medium window 200. Because the distance between the second heat dissipation hole 332 and the medium window 200 is small, after heat exchange between the gas and the medium window 200, the gas carrying heat can be directly discharged from the heat dissipation hole 330 to the outside of the radio frequency chamber 300, achieving timely heat dissipation.

[0061] It should be noted that the preset distance value is not a fixed value and can be set according to actual needs. In this embodiment, the diameter of the heat dissipation hole 330 can be 5mm-10mm, and the distance between the first heat dissipation hole 331 and the medium window 200 can be 70mm-90mm.

[0062] Optionally, the airflow inlet device 500 can be configured as one, or, as... Figures 2-4 As shown, in the direction surrounding the dielectric window 200, at least two airflow introduction devices 500 are spaced apart in the semiconductor process equipment, and the airflow introduction devices 500 are evenly distributed. In this embodiment, the airflow introduction devices 500 are disposed on the sidewall of the static pressure chamber 400, which has a cuboid structure. There are two airflow introduction devices 500, located at opposite ends of the static pressure chamber 400 along its length, and disposed on opposite sidewalls of the static pressure chamber 400 in the width direction. Figure 7 As shown, the static pressure chamber 400 can be a cylindrical structure, and the number of airflow introduction devices 500 can also be set as needed.

[0063] With this configuration, by having at least two airflow introduction devices 500 working simultaneously, gas can quickly fill the static pressure chamber 400 in a short time. Moreover, the airflow introduction devices 500 are evenly distributed, and the gas enters the static pressure chamber 400 from different directions, resulting in good gas uniformity in the static pressure chamber 400 under positive pressure.

[0064] In one embodiment, the airflow introduction device 500 may include a gas source 510, which is connected to the radio frequency chamber 300 via a pipeline. The gas source 510 directly supplies gas into the radio frequency chamber 300, and all the gas flowing to the dielectric window 200 is supplied by the gas source 510. Therefore, the amount of gas that the gas source 510 needs to supply is relatively large. In another embodiment, the airflow introduction device 500 includes a gas source 510 and an air amplifier 520, such as... Figure 5 As shown, the air amplifier 520 has a compressed gas inlet a, an airflow inlet b, and an airflow outlet c. The compressed gas inlet a is connected to the gas source 510. Specifically, the compressed gas inlet a and the gas source 510 can be connected via a pipeline. The airflow inlet b is connected to the external environment, and the airflow outlet c is connected to the radio frequency chamber 300. Optionally, the airflow outlet c can be connected to the air inlet 410 of the static pressure chamber 400, and thus indirectly connected to the radio frequency chamber 300. Specifically, the air amplifier 520 also has an annular cavity d and an airflow channel e inside. The two ports of the airflow channel e are the airflow inlet b and the airflow outlet c, respectively. The annular cavity d is connected to the compressed gas inlet a, and the annular cavity d is connected to the airflow channel e. In a specific embodiment, the air amplifier 520 can amplify the gas input from the compressed gas inlet a by 4-25 times.

[0065] When the air amplifier 520 is operating, the air source 510 supplies compressed gas to the compressed gas inlet a. After swirling within the annular cavity d, the gas enters the airflow channel e and flows out at a high speed along the inner wall of the airflow channel e towards the airflow outlet c. The high-speed airflow creates a low-pressure area corresponding to the airflow outlet c, which has a strong vacuum adsorption function. Therefore, the airflow inlet b merges with the airflow from the external environment, and this airflow flows into the static pressure chamber 400 from the airflow outlet c. In this way, the air source 510 only needs to supply a small amount of compressed gas to the air amplifier 520, and the air amplifier 520 can draw in a large amount of gas from the external environment by utilizing its own structure, thus saving energy.

[0066] In this embodiment, at least two air inlets 410 are spaced apart on the side wall of the static pressure chamber 400 in the direction surrounding the medium window 200. Each air inlet 410 is equipped with an air amplifier 520, and the compressed gas inlet a of each air amplifier 520 is connected to the air source 510. Thus, the air source 510 provides compressed gas to each air amplifier 520, thereby enabling each air amplifier 520 to operate simultaneously, generating a negative pressure at each air inlet 410, so as to draw gas from the external environment into the static pressure chamber 400 through each air inlet 410.

[0067] Because the air amplifier 520 has a strong suction effect, it easily draws larger particles from the external environment into the radio frequency chamber 300. To solve this problem, such as... Figures 2-4 As shown, the semiconductor process equipment also includes a filter cover 600, which is disposed at the airflow inlet b and has multiple filter holes 611. Optionally, the air amplifier 520 can be disposed at the vent. This prevents large particles or other foreign objects from entering the RF chamber 300 and blocking the vent, ensuring normal gas flow within the RF chamber 300.

[0068] like Figure 6 As shown, the filter cover 600 includes a connected filter body 610 and an edge portion 620. The filter body 610 and the edge portion 620 can be integrally formed. The filter body 610 has multiple filter holes 611, which are evenly distributed and each filter hole 611 has a diameter of 8mm-10mm. The edge portion 620 has mounting holes 621 for mounting the filter cover 600. When the filter cover 600 is connected to the static pressure chamber 400 and located at the air inlet 410, threaded fasteners are used to sequentially pass through the mounting hole 621 and the side wall of the static pressure chamber 400 to achieve the connection between the filter cover 600 and the static pressure chamber 400. Optionally, the filter body 610 has a cuboid structure, and multiple filter holes 611 are formed on each wall surface of the filter body 610.

[0069] The filter cover 600 can isolate large particles and other foreign objects, preventing them from entering the static pressure chamber 400 and blocking the exhaust port 420, thus ensuring the normal discharge of gas in the static pressure chamber 400, and preventing large particles and other foreign objects from entering the radio frequency chamber 300 and blocking the vent, thus ensuring the normal flow of gas in the radio frequency chamber 300.

[0070] In an optional embodiment, the semiconductor process equipment further includes a temperature sensing element, a connecting pipe 811, a pressure regulating valve, a flow sensing element, and a switching valve 812. The temperature sensing element is used to detect the temperature of the dielectric window 200 and can be disposed on the outer surface of the dielectric window 200. The temperature sensing element can be a temperature sensor. The gas source 510 is connected to the compressed gas inlet a via the connecting pipe 811, i.e., one end of the connecting pipe 811 is connected to the gas source 510, and the other end is connected to the compressed gas inlet a of the air amplifier 520. The switching valve 812 is disposed on the connecting pipe 811, and the opening or closing of the switching valve 812 controls the on / off state of the connecting pipe 811, thereby controlling whether the gas source 510 supplies gas to the air amplifier 520. The pressure regulating valve and the flow sensing element are both disposed on the connecting pipe 811. The pressure regulating valve adjusts the gas flow rate of the connecting pipe 811, and the flow sensing element detects the flow rate of the connecting pipe 811. Optionally, the switching valve 812 is not limited to a solenoid valve. The temperature sensing element is connected to the switching valve 812 to realize automatic control of the temperature of the medium window 200. The degree of automation is high, and no human intervention is required to control the switching valve 812, which saves manpower and improves control accuracy.

[0071] Specifically, if the temperature detected by the temperature sensing element is higher than the first preset temperature, it indicates that the temperature of the medium window 200 is high. The switching valve 812 is open, and the gas source 510 supplies compressed gas to the air amplifier 520. The air amplifier 520 operates and draws gas from the external environment into the radio frequency chamber 300. The gas further flows downwards to the medium window 200, where it exchanges heat with the medium window 200 to cool it. If the temperature detected by the temperature sensing element is lower than the second preset temperature, it indicates that the temperature of the medium window 200 is low, and no heat exchange with it is needed. At this time, the switching valve 812 is closed, the gas source 510 stops supplying compressed gas to the air amplifier 520, the air amplifier 520 stops operating, no more gas enters the radio frequency chamber 300, and heat exchange between the gas and the medium window 200 ceases.

[0072] The second preset temperature is lower than the first preset temperature. It should be noted that the first and second preset temperatures are not fixed values ​​and can be set as needed.

[0073] In a further embodiment, the semiconductor process equipment may also include a first controller, which is communicatively connected to a temperature sensing element and a switching valve 812. The temperature sensing element transmits the detected temperature information to the first controller, and the first controller opens or closes the switching valve 812 based on the temperature information.

[0074] In this embodiment, reference Figure 15As shown, there are at least two air amplifiers 520, including a first air amplifier 521 and a second air amplifier 522. The connecting pipe 811 includes a main pipe, a first branch pipe, and a second branch pipe. The first end of the first branch pipe and the first end of the second branch pipe are respectively connected to the main pipe, and the main pipe is connected to the air source 510. The second end of the first branch pipe is connected to the compressed gas inlet a of the first air amplifier 521, and the second end of the second branch pipe is connected to the compressed gas inlet a of the second air amplifier 522. The switching valve 812 is set on the main pipe, that is, the switching valve 812 controls whether the air source 510 supplies air to the first air amplifier 521 and the second air amplifier 522 at the same time. When the switching valve 812 is in the open state, the first air amplifier 521 and the second air amplifier 522 can be used to quickly input gas into the radio frequency chamber 300 to increase the air intake.

[0075] Optionally, the pressure regulating valve includes a first pressure regulating valve 813 and a second pressure regulating valve 814. The first branch pipe is equipped with the first pressure regulating valve 813, and the second branch pipe is equipped with the second pressure regulating valve 814. The first pressure regulating valve 813 can be controlled as needed to regulate the gas flow rate in the first branch pipe, and the second pressure regulating valve 814 can be controlled as needed to regulate the gas flow rate in the second branch pipe. The flow detection element includes a first flow meter 815 and a second flow meter 816. The first branch pipe and the second branch pipe are respectively equipped with the first flow meter 815 and the second flow meter 816. The flow rate in the first branch pipe is detected by the first flow meter 815, and the flow rate in the second branch pipe is detected by the second flow meter 816.

[0076] In another alternative embodiment, refer to Figure 16 As shown, the semiconductor process equipment also includes a temperature sensing element, a first conduit 821, a second conduit 822, a third conduit 823, a first switching valve 824, a second switching valve 825, a third switching valve 826, a third pressure regulating valve 827, a fourth pressure regulating valve 830, and a flow sensing element. The temperature sensing element is used to detect the temperature of the dielectric window 200, and the temperature sensing element can be disposed on the outer surface of the dielectric window 200.

[0077] There are at least two air amplifiers 520, including a first air amplifier 521 and a second air amplifier 522. There are at least two air sources 510, including a first air source 511 and a second air source 512. The compressed gas inlet a of the first air amplifier 521 is connected to the first air source 511 through a first pipe 821, and the compressed gas inlet a of the second air amplifier 522 is connected to the second air source 512 through a second pipe 822. Specifically, one end of the first pipe 821 is connected to the first air source 511, and the other end of the first pipe 821 is connected to the compressed gas inlet a of the first air amplifier 521. One end of the second pipe 822 is connected to the second air source 512, and the other end of the second pipe 822 is connected to the compressed gas inlet a of the second air amplifier 522. A first switching valve 824 is located in the first pipeline 821, and a second switching valve 825 is located in the second pipeline 822. The opening and closing of the first switching valve 824 controls the on / off state of the first pipeline 821, thereby controlling whether the first air source 511 supplies air to the first air amplifier 521. Similarly, the opening and closing of the second switching valve 825 controls the on / off state of the second pipeline 822, thereby controlling whether the second air source 512 supplies air to the second air amplifier 522. Optionally, the first switching valve 824 and the second switching valve 825 are not limited to solenoid valves.

[0078] Optionally, a third pressure regulating valve 827 is located in the first pipeline 821, between the first gas source 511 and the first switching valve 824. The third pressure regulating valve 827 can be controlled as needed to regulate the gas flow rate in the first pipeline 821. Similarly, a fourth pressure regulating valve 830 is located in the second pipeline 822, between the second gas source 512 and the second switching valve 825. The fourth pressure regulating valve 830 can be controlled as needed to regulate the gas flow rate in the second pipeline 822. Furthermore, both the first pipeline 821 and the second pipeline 822 can be equipped with flow detection elements, namely a third flow meter 828 and a fourth flow meter 829. The third flow meter 828 detects the flow rate in the first pipeline 821, and the fourth flow meter 829 detects the flow rate in the second pipeline 822.

[0079] The first end of the third pipeline 823 is connected to the first pipeline 821, and the connection point is located between the first switching valve 824 and the first air amplifier 521. The second end of the third pipeline 823 is connected to the second pipeline 822, and the connection point is located between the second switching valve 825 and the second air amplifier 522. The third switching valve 826 is located in the third pipeline 823, and the opening or closing of the third switching valve 826 controls the on / off state of the third pipeline 823. The temperature detection element is communicatively connected to the first switching valve 824, the second switching valve 825, and the third switching valve 826 respectively, realizing automatic control of the temperature of the medium window 200. The degree of automation is high, and no human intervention is required to control the first switching valve 824, the second switching valve 825, and the third switching valve 826, which saves manpower and improves control accuracy.

[0080] Specifically, when the temperature detected by the temperature sensing element is higher than the third preset temperature but lower than the fourth preset temperature, it indicates that the temperature of the medium window 200 is high. The first switching valve 824 and the third switching valve 826 are opened, and the second switching valve 825 is closed. The first gas source 511 provides compressed gas to the first pipeline 821. When the compressed gas flows through the connection between the first pipeline 821 and the third pipeline 823, part of the compressed gas enters the first air amplifier 521, and the other part of the compressed gas enters the second air amplifier 522 through the third pipeline 823. That is, the first gas source 511 simultaneously provides compressed gas to the first air amplifier 521 and the second air amplifier 522. At this time, the first air amplifier 521 and the second air amplifier 522 work together to draw gas into the radio frequency chamber 300. The gas further flows from top to bottom to the medium window 200, and the gas exchanges heat with the medium window 200 to cool the medium window 200.

[0081] If the temperature detected by the temperature sensing element is higher than the fourth preset temperature, it indicates that the temperature of the medium window 200 has reached a higher value than the third preset temperature. At this time, the first switch valve 824 and the second switch valve 825 open, and the third switch valve 826 closes. The first gas source 511 supplies compressed gas to the first pipeline 821, and at the same time, the second gas source 512 supplies compressed gas to the second pipeline 822. The compressed gas flowing through the first pipeline 821 enters the first air amplifier 521, and the compressed gas flowing through the second pipeline 822 enters the second air amplifier 522. Since the first gas source 511 and the second gas source 512 supply compressed gas at the same time, the total amount of compressed gas input to the first air amplifier 521 and the second air amplifier 522 increases, the negative pressure effect of the first air amplifier 521 and the second air amplifier 522 is enhanced, and thus the speed at which gas is drawn into the radio frequency chamber 300 increases. The amount of gas in the radio frequency chamber 300 increases, and finally the heat exchange rate between the gas and the medium window 200 increases, and the cooling rate of the medium window 200 increases.

[0082] The fourth preset temperature is higher than the third preset temperature. Optionally, the third preset temperature can be 150℃ and the fourth preset temperature can be 160℃. It should be noted that the third and fourth preset temperatures are not fixed values ​​and can be set as needed.

[0083] With this configuration, the temperature detection element, the first switching valve 824, the second switching valve 825, and the third switching valve 826 form a temperature control system. The temperature control system activates the corresponding cooling mode based on whether the temperature of the medium window 200 is higher than the third preset temperature or the fourth preset temperature.

[0084] Optionally, the third switching valve 826 may not be limited to a one-way valve. Specifically, when the temperature detected by the temperature sensing element is higher than the third preset temperature but lower than the fourth preset temperature, the first switching valve 824 opens and the second switching valve 825 closes. The one-way valve opens the third pipeline 823 from the first end to the second end, allowing the first gas source to transmit compressed gas through the first pipeline 821. A portion of the gas in the first pipeline 821 enters the first air amplifier 521, while the remaining gas enters the second air amplifier 522 through the one-way valve. When the temperature detected by the temperature sensing element is higher than the fourth preset temperature, the first switching valve 824 and the second switching valve 825 open. The one-way valve cuts off the third pipeline 823 from the second end to the first end, allowing the compressed gas from the first gas source 511 to enter the first air amplifier through the first pipeline 821, and the compressed gas from the second gas source 512 to enter the second air amplifier through the second pipeline 822.

[0085] Thus, there is no need to control the one-way valve separately. Regardless of whether the detected temperature is higher than the third preset temperature or the fourth preset temperature, the state of the one-way valve meets the above process. In particular, when the temperature of the medium window 200 is higher than the fourth preset temperature, since the one-way valve cuts off the third pipeline 823 in the direction from the second end to the first end, and the air pressure of the first pipeline 821 is basically the same as that of the second pipeline 822, the compressed gas in the first pipeline 821 will not flow through the third pipeline 823.

[0086] In a further embodiment, the temperature control system may further include a second controller, which is communicatively connected to a temperature detection element, a first switching valve 824, a second switching valve 825, and a third switching valve 826. The temperature detection element transmits the detected temperature information to the controller, and the controller opens or closes the first switching valve 824, the second switching valve 825, and the third switching valve 826 based on the temperature information.

[0087] In the embodiments of this application, such as Figures 8-9As shown, the semiconductor process equipment also includes an airflow guide tube 700, which is located inside the radio frequency chamber 300 and connected to the radio frequency chamber 300. The first end of the airflow guide tube 700 is connected to the vent, and the second end of the airflow guide tube 700 is opposite to the dielectric window 200.

[0088] The airflow guide tube 700 corrects the gas flow direction entering the radio frequency chamber 300, causing the gas to flow vertically downwards to the dielectric window 200. The gas falls more concentratedly into the dielectric window 200, avoiding gas diffusion in all directions and thus preventing gas waste, thereby ensuring the temperature control effect of the dielectric window 200.

[0089] In optional embodiments, such as Figures 10-13 As shown, in the direction near the medium window 200, the flow area of ​​the airflow guide tube 700 gradually increases, gradually decreases, or remains constant. Optionally, as... Figure 10 As shown, in the direction near the medium window 200, the flow area of ​​the airflow guide tube 700 can remain constant or fluctuate within the range of the constant value; for example... Figure 12 As shown, the flow area of ​​the airflow guide tube 700 can be uniformly increased in the direction near the medium window 200; as Figure 11 As shown, in the direction near the medium window 200, the flow area of ​​the airflow guide cylinder 700 can be increased unevenly. In this case, the inner wall surface of the airflow guide cylinder 700 can adopt a circular arc transition structure, and the radius of the circular arc can be 10mm to 30mm; Figure 13 As shown, the flow area of ​​the airflow guide tube 700 can be reduced uniformly or non-uniformly in the direction near the medium window 200. A suitable guide tube structure can be adopted as needed to maintain approximately the same flow area, or to increase or decrease the flow area.

[0090] In this embodiment, the airflow guide cylinder 700 is vertically arranged. The height of the airflow guide cylinder 700 can be determined according to specific circumstances. Specifically, if it is necessary to cool the central area of ​​the medium window 200, the height of the airflow guide cylinder 700 can be increased so that the distance between the lower end of the airflow guide cylinder 700 and the medium window 200 is less than a preset value, that is, the distance between the airflow guide cylinder 700 and the medium window 200 is smaller, and the gas flowing out of the airflow guide cylinder 700 flows towards the central area of ​​the medium window 200. If it is necessary to cool the entire surface of the medium window 200, the height of the airflow guide cylinder 700 can be appropriately reduced so that the gas flowing out of the airflow guide cylinder 700 diffuses to a certain extent and flows towards the entire medium window 200. At the same time, a suitable airflow guide cylinder 700 structure is adopted to guide the airflow direction and avoid premature lateral dissipation of the gas flowing out of the airflow guide cylinder 700.

[0091] In an optional embodiment, refer to Figure 14 As shown, the semiconductor process equipment also includes a heating device located above the dielectric window 200. The heating device includes an air heater and a gas circulation path, both disposed within the radio frequency chamber 300, with the gas circulation path facing the dielectric window 200. The air heater is positioned within the gas circulation path to heat the gas flowing through it. After the air heater heats the gas in the gas circulation path, the gas temperature rises, becoming hot gas. This hot gas flows towards the dielectric window 200 to heat it.

[0092] Optionally, the heating device may include a first gas supply line 911, a first arc-shaped chamber 914, a second gas supply line 921, and a second arc-shaped chamber 924. Both the first gas supply line 911 and the second gas supply line 921 are bent pipes. In a direction parallel to the medium window 200, the first gas supply line 911 and the second gas supply line 921 are respectively located on both sides of the medium window 200. The first arc-shaped chamber 914 and the second arc-shaped chamber 924 are both located above the medium window 200, and the first arc-shaped chamber 914 and the medium window 200 form a closed cavity. The second arc-shaped chamber 924 and the medium window 200 also form a closed cavity. The upper surface of the medium window 200 faces the first arc-shaped chamber 914 and the second arc-shaped chamber 924. The first gas supply line 911, the first arc-shaped chamber 914, the second gas supply line 921, and the second arc-shaped chamber 924 are connected end-to-end to form a gas circulation path.

[0093] Specifically, the first gas supply pipeline 911 is provided with a first air inlet port and a first air outlet port, the first arc-shaped chamber 914 is provided with a first air inlet port and a second air outlet port, the second gas supply pipeline 921 is provided with a second air inlet port and a second air outlet port, the second arc-shaped chamber 924 is provided with a second air inlet port and a second air outlet port, the first air outlet port of the first gas supply pipeline 911 is connected to the first air inlet port of the first arc-shaped chamber 914, the first air outlet port of the first arc-shaped chamber 914 is connected to the second air inlet port of the second gas supply pipeline 921, the second air outlet port of the second gas supply pipeline 921 is connected to the second air inlet port of the second arc-shaped chamber 924, and the second air outlet port of the second arc-shaped chamber 924 is connected to the first air inlet port of the first gas supply pipeline 911.

[0094] To ensure gas flow within the gas circulation path, the first gas supply line 911 is equipped with a third air amplifier 913, and / or the second gas supply line 921 is equipped with a fourth air amplifier 923. Furthermore, the air heater includes a first air heater 912 and a second air heater 922, with the first air heater 912 located in the first gas supply line 911 and the second air heater 922 located in the second gas supply line 921. Thus, under the action of the third air amplifier 913, a negative pressure is generated within the first gas supply line 911, and / or, under the action of the fourth air amplifier 923, a negative pressure is generated within the second gas supply line 921, causing the gas within the gas circulation path to flow. The flowing gas is heated by the first air heater 912 and the second air heater 922, and finally, the hot gas flows towards the medium window 200 to heat the medium window 200.

[0095] In this embodiment, the heating device is used to heat the central region of the medium window 200. Specifically, the first arc-shaped chamber 914 and the second arc-shaped chamber 924 together form a ring structure, and both are opposite to the central region of the medium window 200. Simultaneously with the heating device, the bottom wall of the static pressure chamber 400 is provided with a first exhaust port 421 and a second exhaust port 422. The flow area of ​​the first exhaust port 421 is larger than that of the second exhaust port 422, increasing the gas flow rate towards the central region of the medium window 200. This results in a better cooling effect on the central region of the medium window 200 than on the edge region, thereby reducing the temperature difference between the central and edge regions of the medium window 200 and effectively and uniformly controlling the temperature of the medium window 200.

[0096] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A semiconductor process apparatus, characterized in that, include: A process chamber (100) and a medium window (200), wherein the medium window (200) is located above the process chamber (100); A radio frequency (RF) chamber (300) is disposed above the process chamber (100), and the dielectric window (200) faces the interior of the RF chamber (300). The RF chamber (300) is provided with a vent. An airflow introduction device (500) is provided. Under the action of the airflow introduction device (500), external gas enters the radio frequency chamber (300) through the air inlet and generates a temperature-controlled airflow that flows from top to bottom to the medium window (200) in the radio frequency chamber (300). The side wall of the radio frequency chamber (300) is provided with heat dissipation holes (330). The airflow introduction device (500) includes an air source (510) and an air amplifier (520). The air amplifier (520) is provided with a compressed gas inlet (a), an airflow inlet (b), and an airflow outlet (c). The compressed gas inlet (a) is connected to the air source (510), the airflow inlet (b) is connected to the external environment, and the airflow outlet (c) is connected to the radio frequency chamber (300). The semiconductor process equipment further includes a temperature detection element for detecting the temperature of the dielectric window (200). The number of air amplifiers (520) is at least two, including a first air amplifier (521) and a second air amplifier (522). The number of air sources (510) is at least two, including a first air source (511) and a second air source (512). The compressed gas inlet (a) of the first air amplifier (521) is connected to the first air source (511), and the compressed gas inlet (a) of the second air amplifier (522) is connected to the second air source (512). When the temperature detected by the temperature detection element is higher than the third preset temperature and lower than the fourth preset temperature, the first gas source (511) simultaneously provides compressed gas to the first air amplifier (521) and the second air amplifier (522); When the temperature detected by the temperature sensing element is higher than the fourth preset temperature, the first gas source (511) provides compressed gas to the first air amplifier (521), and the second gas source (512) provides compressed gas to the second air amplifier (522). The fourth preset temperature is greater than the third preset temperature.

2. The semiconductor process equipment according to claim 1, characterized in that, The semiconductor process equipment also includes a static pressure chamber (400), which is provided with an air inlet (410). The airflow introduction device (500) is disposed in the static pressure chamber (400). Under the action of the airflow introduction device (500), external gas enters the static pressure chamber (400) through the air inlet (410) and diffuses in the static pressure chamber (400). The static pressure chamber (400) is also provided with an exhaust port (420), which is connected to the ventilation port.

3. The semiconductor process equipment according to claim 2, characterized in that, The radio frequency chamber (300) is connected between the process chamber (100) and the static pressure chamber (400). The exhaust port (420) is located on the bottom wall of the static pressure chamber (400), and the vent is located on the top wall of the radio frequency chamber (300). The vent is opposite to the dielectric window (200), and the exhaust port (420) is opposite to the vent.

4. The semiconductor process equipment according to claim 3, characterized in that, The exhaust port (420) includes a first exhaust port (421) and a second exhaust port (422). The distance between the first exhaust port (421) and the center of the medium window (200) is less than the distance between the second exhaust port (422) and the center of the medium window (200). The flow area of ​​the first exhaust port (421) is greater than the flow area of ​​the second exhaust port (422). The vent includes a first vent (310) and a second vent (320). The first vent (310) is opposite to and connected to the first exhaust port (421), and the second vent (320) is opposite to and connected to the second exhaust port (422). The flow area of ​​the first vent (310) is greater than the flow area of ​​the second vent (320).

5. The semiconductor process equipment according to claim 2, characterized in that, At least two airflow inlet devices (500) are provided at intervals in the direction surrounding the medium window (200), and each airflow inlet device (500) is evenly distributed.

6. The semiconductor process equipment according to claim 1, characterized in that, In the direction surrounding the dielectric window (200) and in the arrangement direction of the process chamber (100) and the radio frequency chamber (300), a plurality of heat dissipation holes (330) are provided on the side wall of the radio frequency chamber (300). In the arrangement direction of the process chamber (100) and the radio frequency chamber (300), the heat dissipation hole (330) closest to the vent is the first heat dissipation hole (331), and the heat dissipation hole (330) farthest from the vent is the second heat dissipation hole (332). The distance between the first heat dissipation hole (331) and the vent is greater than a preset distance value, and the second heat dissipation hole (332) faces the outer peripheral surface of the dielectric window (200).

7. The semiconductor process equipment according to claim 1, characterized in that, The semiconductor process equipment also includes a filter cover (600), which is located at the airflow inlet (b) and has a plurality of filter holes (611).

8. The semiconductor process equipment according to claim 1, characterized in that, The semiconductor process equipment also includes a connecting pipe (811), a pressure regulating valve, a flow detection element, and a switching valve (812). The gas source (510) is connected to the compressed gas inlet (a) through the connecting pipe (811). The switching valve (812), the pressure regulating valve, and the flow detection element are all located in the connecting pipe (811). The temperature detection element is communicatively connected to the switching valve (812). When the temperature detected by the temperature sensing element is higher than the first preset temperature, the switch valve (812) is in the open state; when the temperature detected by the temperature sensing element is lower than the second preset temperature, the switch valve (812) is in the closed state. The second preset temperature is lower than the first preset temperature.

9. The semiconductor process equipment according to claim 1, characterized in that, The semiconductor process equipment also includes a first pipeline (821), a second pipeline (822), a third pipeline (823), a first switching valve (824), a second switching valve (825), a third switching valve (826), a third pressure regulating valve (827), a fourth pressure regulating valve (830), and a flow detection element. The compressed gas inlet (a) of the first air amplifier (521) is connected to the first gas source (511) through the first pipeline (821), and the compressed gas inlet (a) of the second air amplifier (522) is connected to the second gas source (512) through the second pipeline (822). The first switching valve (824) and the third pressure regulating valve (827) are both located in the first pipeline (821), and the second switching valve (825) and the fourth pressure regulating valve (830) are both located in the second pipeline (822). The first pipeline (821) and the second pipeline (822) are both equipped with the flow detection element. The first end of the third pipeline (823) is connected to the first pipeline (821), and the connection point is located between the first switching valve (824) and the first air amplifier (521). The second end of the third pipeline (823) is connected to the second pipeline (822), and the connection point is located between the second switching valve (825) and the second air amplifier (522). The third switching valve (826) is located in the third pipeline (823). The temperature detection element is communicatively connected to the first switching valve (824), the second switching valve (825), and the third switching valve (826). When the temperature detected by the temperature sensing element is higher than the third preset temperature and lower than the fourth preset temperature, the first switching valve (824) and the third switching valve (826) are opened, and the second switching valve (825) is closed; when the temperature detected by the temperature sensing element is higher than the fourth preset temperature, the first switching valve (824) and the second switching valve (825) are opened, and the third switching valve (826) is closed.

10. The semiconductor process equipment according to claim 9, characterized in that, The third switching valve (826) is a one-way valve. In the direction from the first end of the third pipeline (823) to the second end of the third pipeline (823), the one-way valve opens the third pipeline (823).

11. The semiconductor process equipment according to claim 1, characterized in that, The semiconductor process equipment also includes an airflow guide tube (700), which is located inside the radio frequency chamber (300) and connected to the radio frequency chamber (300). The first end of the airflow guide tube (700) is connected to the vent, and the second end of the airflow guide tube (700) is opposite to the dielectric window (200).

12. The semiconductor process equipment according to claim 11, characterized in that, In the direction near the medium window (200), the flow area of ​​the airflow guide tube (700) gradually increases, gradually decreases, or remains constant.

13. The semiconductor process equipment according to claim 1, characterized in that, The semiconductor process equipment also includes a heating device, which includes an air heater and a gas circulation path. The gas circulation path is located within the radio frequency chamber (300) and faces the dielectric window (200). The air heater is located in the gas circulation path to heat the gas flowing through it.

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