Electronic device and manufacturing method thereof

Abstract

The present invention discloses an electronic device and a manufacturing method thereof, which includes a substrate, a conductive functional layer, a pixel definition layer, and a light-emitting functional layer. The conductive functional layer is arranged on one side of the substrate and includes multiple anodes arranged on the side of the substrate; the pixel definition layer is arranged on the side of the conductive functional layer away from the substrate and includes multiple pixel openings, and one pixel opening corresponds to one anode; the light-emitting functional layer includes multiple functional parts, and one functional part is correspondingly arranged in one pixel opening, and each functional part is independently selected from any one of a light-emitting pixel and a photosensitive device; wherein the conductive functional layer also includes a light-blocking structure arranged at least between two adjacent functional parts, and the light-blocking structure is spaced apart from the anode. The present invention can reduce lateral light crosstalk between adjacent light-emitting pixels and improve the sensing accuracy of the photosensitive device.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to an electronic device and a manufacturing method thereof. Background Art

[0002] At present, the light-emitting function and / or sensing function of electronic devices are often realized by setting light-emitting pixels and / or photosensitive devices in electronic devices. For example, the light-emitting pixels can be organic light-emitting diodes (OLEDs), and the photosensitive devices can be organic photodiodes (OPDs). Among them, the light-emitting pixels can be used for self-luminescence of electronic devices, and the photosensitive devices can be used for fingerprint recognition, face recognition, and distance sensing of electronic devices, thereby integrating display and many photosensitive functions into one.

[0003] However, in electronic devices, multiple openings can be defined by a pixel definition layer, and light-emitting pixels or photosensitive devices can be placed in each opening. Between adjacent openings, light emitted by one light-emitting pixel can easily enter another opening, thereby affecting the light emission of the light-emitting pixel in the other opening or affecting the sensing accuracy of the photosensitive device in the other opening. In addition, stray light in the environment can easily enter the opening at an angle, similarly affecting the sensing accuracy of the photosensitive device in the opening. Summary of the Invention

[0004] Embodiments of the present invention provide an electronic device and a manufacturing method thereof, which can reduce the optical crosstalk problem between adjacent pixel openings and improve the sensing accuracy of a sensing device.

[0005] An embodiment of the present invention provides an electronic device, comprising:

[0006] substrate;

[0007] A conductive functional layer is provided on one side of the substrate and includes a plurality of anodes provided on one side of the substrate;

[0008] A pixel definition layer is disposed on a side of the conductive functional layer away from the substrate and includes a plurality of pixel openings, wherein one pixel opening is disposed corresponding to one anode;

[0009] The light-emitting functional layer includes a plurality of functional parts, wherein one of the functional parts is correspondingly disposed in one of the pixel openings, and each of the functional parts is independently selected from any one of a light-emitting pixel and a photosensitive device;

[0010] The conductive functional layer further includes a light-blocking structure at least disposed between two adjacent functional portions, and the light-blocking structure is spaced apart from the anode, and the thickness of the light-blocking structure is greater than the thickness of the anode.

[0011] In an embodiment of the present invention, the light-blocking structure is arranged around each of the functional parts.

[0012] In an embodiment of the present invention, the pixel definition layer further includes a retaining wall structure disposed around each of the pixel openings, and the light-blocking structure is embedded in the retaining wall structure.

[0013] In one embodiment of the present invention, the distance from the surface of the light-blocking structure away from the substrate to the substrate is smaller than the distance from the surface of the retaining wall structure away from the substrate to the substrate, and the retaining wall structure covers the light-blocking structure.

[0014] In one embodiment of the present invention, the electronic device further comprises a cathode layer disposed on a side of the pixel definition layer away from the substrate, and the cathode layer covers the plurality of pixel openings and the light-blocking structure and is electrically connected to the light-blocking structure.

[0015] In one embodiment of the present invention, the thickness of the light-blocking structure is equal to the thickness of the retaining wall structure, and the surface of the light-blocking structure away from the substrate is flush with the surface of the retaining wall structure away from the substrate, and the cathode layer covers the side of the light-blocking structure away from the substrate.

[0016] In one embodiment of the present invention, the thickness of the light-blocking structure is greater than the thickness of the retaining wall structure, and the light-blocking structure includes a first sub-portion embedded in the retaining wall structure and a second sub-portion protruding from the retaining wall structure away from the surface of one side of the substrate, and the cathode layer covers the second sub-portion.

[0017] In one embodiment of the present invention, the thickness of the second sub-portion is greater than 0 and less than or equal to 0.3 of the thickness of the cathode layer.

[0018] In one embodiment of the present invention, the thickness of the light-blocking structure is greater than or equal to 100 nm.

[0019] According to the above object of the present invention, a method for manufacturing an electronic device is provided, which comprises the following steps:

[0020] providing a substrate;

[0021] forming a conductive functional layer on one side of the substrate, wherein the conductive functional layer includes a plurality of anodes and a light-blocking structure provided on one side of the substrate, and the light-blocking structure is spaced apart from the anodes;

[0022] forming a pixel definition layer on a side of the conductive functional layer away from the substrate, wherein the pixel definition layer includes a plurality of pixel openings, and each pixel opening is corresponding to each anode;

[0023] A light-emitting functional layer is formed on a side of the pixel definition layer away from the conductive functional layer, and the light-emitting functional layer includes a plurality of functional parts, and one of the functional parts is correspondingly arranged in one of the pixel openings, and each of the functional parts is independently selected from any one of a light-emitting pixel and a photosensitive device, wherein the light-blocking structure is formed at least between two adjacent functional parts.

[0024] Beneficial effects of the present invention: The present invention sets a light-blocking structure between adjacent functional parts, and the functional parts include light-emitting pixels or photosensitive devices, and then between adjacent pixel openings, the light-blocking structure can block the light emitted by the light-emitting pixels in one pixel opening from entering the adjacent pixel opening, so as to reduce the probability of the light output of the light-emitting pixels in the other pixel opening being affected, or improve the sensing accuracy of the photosensitive device in the other pixel opening; in addition, when a photosensitive device is provided in a pixel opening, a light-blocking structure is provided on its side, which can block and reflect at least part of the ambient stray light from being incident on the photosensitive device in an oblique direction, so as to improve the sensing accuracy of the photosensitive device. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The technical solutions and other beneficial effects of the present invention will be made apparent by describing in detail the specific embodiments of the present invention in conjunction with the accompanying drawings.

[0026] Figure 1 A schematic structural diagram of an electronic device provided in an embodiment of the present invention;

[0027] Figure 2 Another structural diagram of an electronic device provided by an embodiment of the present invention;

[0028] Figure 3 Another structural diagram of an electronic device provided by an embodiment of the present invention;

[0029] Figure 4 A flow chart of a method for manufacturing an electronic device according to an embodiment of the present invention;

[0030] Figures 5 to 11 A schematic diagram of the manufacturing process structure of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0032] The disclosure below provides many different embodiments or examples for realizing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. In addition, the present invention may repeat reference numbers and / or reference letters in different examples. Such repetition is for the purpose of simplicity and clarity and does not in itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides examples of various specific processes and materials, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0033] The embodiment of the present invention provides an electronic device, please refer to Figure 1 The electronic device includes a substrate 10, a conductive functional layer 20, a pixel definition layer 30 and a light-emitting functional layer.

[0034] Among them, the conductive functional layer 20 is arranged on one side of the substrate 10, and the conductive functional layer 20 includes a plurality of anodes 21 arranged on one side of the substrate 10; the pixel definition layer 30 is arranged on the side of the conductive functional layer 20 away from the substrate 10, and the pixel definition layer 30 includes a plurality of pixel openings 32, and one pixel opening 32 is arranged corresponding to one anode 21; the light-emitting functional layer includes a plurality of functional parts 40, and one functional part 40 is correspondingly arranged in one pixel opening 32, and each functional part 40 is independently selected from any one of the light-emitting pixels 41 and the photosensitive device 42.

[0035] Furthermore, the conductive functional layer 20 further includes a light-blocking structure 22 disposed at least between two adjacent functional portions 40 . The light-blocking structure 22 is spaced apart from the anode 21 , and the thickness of the light-blocking structure 22 is greater than that of the anode 21 .

[0036] During the implementation and application process, the embodiment of the present invention sets a light-blocking structure 22 between adjacent functional parts 40, and the functional part 40 is a light-emitting pixel 41 or a photosensitive device 42. Therefore, between adjacent pixel openings 32, the light-blocking structure 22 can block the light emitted by the light-emitting pixel 41 in one pixel opening 32 from entering the adjacent pixel opening 32, so as to reduce the probability of the light output of the light-emitting pixel 41 in the other pixel opening 32 being affected, or to improve the sensing accuracy of the photosensitive device 42 in the other pixel opening 32; in addition, when a photosensitive device 42 is provided in a pixel opening 32, a light-blocking structure 22 is provided on its side, so as to block a part of the ambient stray light from being incident on the photosensitive device 42 from an oblique direction, so as to improve the sensing accuracy of the photosensitive device 42.

[0037] Specifically, in one embodiment of the present invention, please refer to Figure 1The electronic device provided by an embodiment of the present invention includes a substrate 10, a thin film transistor layer 50 arranged on the substrate 10, a conductive functional layer 20 arranged on the thin film transistor layer 50, a pixel definition layer 30 arranged on the conductive functional layer 20, a light-emitting functional layer arranged on the pixel definition layer 30, and a cathode layer 60 arranged on the light-emitting functional layer.

[0038] The substrate 10 may be a glass substrate, and the thin film transistor layer 50 includes a thin film transistor 51 disposed on the substrate 10 and an insulating layer covering the thin film transistor 51. Specifically, the insulating layer includes a first insulating layer 52 disposed on the substrate 10, a second insulating layer 53 disposed on the first insulating layer 52, a third insulating layer 54 disposed on the second insulating layer 53, and a planar layer 55 disposed on the third insulating layer 54. In addition, the thin film transistor 51 includes an active layer disposed on the substrate 10 and covered by the first insulating layer 52, a gate disposed on the first insulating layer 52 and covered by the second insulating layer 53, and a source and a drain disposed on the second insulating layer 53 and covered by the third insulating layer 54. The source and the drain are connected to both sides of the active layer through vias passing through the second insulating layer 53 and the first insulating layer 52.

[0039] Optionally, the first insulating layer 52, the second insulating layer 53 and the third insulating layer 54 may be made of inorganic materials. Specifically, the first insulating layer 52, the second insulating layer 53 and the third insulating layer 54 may each include any one of a silicon nitride film and a silicon oxide film, or a stacked structure including at least one silicon nitride film and at least one silicon oxide film; the flattening layer 55 may be made of an organic material. Specifically, the material of the flattening layer 55 may be a polyimide material, an acrylic material or a siloxane organic photoresist material, etc.

[0040] The conductive functional layer 20 includes a plurality of anodes 21 and a light-blocking structure 22 disposed on the planar layer 55 . The light-blocking structure 22 is spaced apart from the plurality of anodes 21 . Each anode is disposed corresponding to a thin film transistor 51 and is electrically connected to the corresponding thin film transistor 51 to receive an electrical signal.

[0041] Preferably, the light-blocking structure 22 is disposed around the plurality of anodes 21 , that is, the light-blocking structure 22 is distributed in a grid pattern on the flat layer 55 , and the plurality of anodes 21 are correspondingly distributed in the plurality of grids of the light-blocking structure 22 .

[0042] Optionally, the material of the conductive functional layer 20 includes at least one of copper, aluminum and magnesium.

[0043] The pixel definition layer 30 is disposed on the conductive functional layer 20 and defines a plurality of pixel openings 32. Each pixel opening 32 is disposed corresponding to an anode 21 to expose a portion of the upper surface of the corresponding anode 21. Specifically, the pixel definition layer 30 includes a retaining wall structure 31, and the retaining wall structure 31 is disposed around the plurality of pixel openings 32. The light-blocking structure 22 is disposed between adjacent pixel openings 32 and surrounds the plurality of pixel openings 32. In other words, the orthographic projection of the light-blocking structure 22 on the substrate 10 does not overlap with the orthographic projection of the pixel opening 32 on the substrate 10.

[0044] The light-blocking structure 22 is disposed on the planar layer 55 , and the thickness of the light-blocking structure 22 is smaller than that of the retaining wall structure 31 , so that the light-blocking structure 22 is embedded in the retaining wall structure 31 , and the retaining wall structure 31 covers the light-blocking structure 22 .

[0045] The light-emitting functional layer includes a plurality of functional portions 40 , and one functional portion 40 is correspondingly disposed in one pixel opening 32 , wherein each functional portion 40 is independently selected from any one of the light-emitting pixel 41 and the photosensitive device 42 .

[0046] It can be understood that in the embodiment of the present invention, a luminous pixel 41 can be set in each pixel opening 32, a photosensitive device 42 can be set in each pixel opening 32, or a luminous pixel 41 can be set in some pixel openings 32, while a photosensitive device 42 can be set in another part of the pixel openings 32. Among them, the luminous pixel 41 can be self-luminous to realize the display function of the electronic device, and the photosensitive device 42 can perform functions such as fingerprint recognition, face recognition and distance sensing. In the embodiment of the present invention, the case where the luminous pixel 41 is set in some pixel openings 32 and the photosensitive device 42 is set in another part of the pixel openings 32 is used as an example for explanation.

[0047] Furthermore, the light-emitting pixels 41 and the photosensitive devices 42 can be evenly distributed in the display area of ​​the electronic device, and the light-emitting pixels 41 and the photosensitive devices 42 can be located in adjacent pixel openings 32 and arranged alternately, or a functional area is set in the electronic device, and the photosensitive device 42 is set in the functional area, then the functional area can perform functions such as fingerprint recognition, facial recognition and distance sensing.

[0048] In an embodiment of the present invention, the light-blocking structure 22 is located between adjacent pixel openings 32, that is, the light-blocking structure 22 is located between adjacent functional parts 40, and the light-blocking structure 22 can block and reflect the light emitted by the luminous pixel 41 in one pixel opening 32 into the adjacent pixel opening 32, so as to reduce the probability of the light output of the luminous pixel 41 in the other pixel opening 32 being affected, or improve the sensing accuracy of the photosensitive device 42 in the other pixel opening 32; in addition, when a photosensitive device 42 is provided in a pixel opening 32, a light-blocking structure 22 is provided on its side, so as to block and reflect at least part of the ambient stray light from being incident on the photosensitive device 42 in an oblique direction, so as to improve the sensing accuracy of the photosensitive device 42.

[0049] For example, when the photosensitive device 42 is used for fingerprint recognition, the light that needs to be irradiated onto the photosensitive device 42 is the light reflected back from the corresponding fingerprint, preferably the light incident in the vertical direction. However, in this process, the light reflected by the adjacent fingerprint or the ambient stray light may be obliquely incident on the photosensitive device 42, or the light emitted by the luminous pixel 41 in the adjacent pixel opening 32 may be irradiated from the side to the photosensitive device 42, resulting in the sensing accuracy of the photosensitive device 42 being affected. The embodiment of the present invention provides a light-blocking structure between adjacent pixel openings 32, which can, on the one hand, block the light reflected by the adjacent fingerprint or the ambient stray light from being obliquely incident on the photosensitive device 42, and on the other hand, block the light emitted by the adjacent luminous pixel 41 from being incident from the side to the photosensitive device 42, thereby improving the sensing accuracy of the photosensitive device 42.

[0050] The thickness of the light-blocking structure 22 is greater than the thickness of the anode 21 ; optionally, the thickness of the light-blocking structure 22 is greater than 100 nm to achieve an effective light-reflecting effect.

[0051] In addition, in other embodiments of the present invention, the thickness of the light-blocking structure 22 may be set to be greater than the thickness of the functional portion 40 to effectively block lateral light crosstalk between adjacent light-emitting pixels 41 and the influence of ambient stray light.

[0052] The cathode layer 60 is disposed on the pixel definition layer 30 . The cathode layer 60 continuously covers the plurality of pixel openings 32 and extends into the pixel openings 32 to be electrically connected to each functional portion 40 .

[0053] It should be noted that the electronic device provided in the embodiment of the present invention further includes a packaging layer and a cover plate covering the cathode layer 60 , and the above structure can be implemented by conventional means, which will not be described in detail here.

[0054] As described above, in an embodiment of the present invention, a light-blocking structure 22 is provided between adjacent functional portions 40, and the functional portion 40 is a light-emitting pixel 41 or a photosensitive device 42. Thus, between adjacent pixel openings 32, the light-blocking structure 22 can block the light emitted by the light-emitting pixel 41 in one pixel opening 32 from entering the adjacent pixel opening 32, thereby reducing the probability of the light output of the light-emitting pixel 41 in the other pixel opening 32 being affected, or improving the sensing accuracy of the photosensitive device 42 in the other pixel opening 32. In addition, when a photosensitive device 42 is provided in a pixel opening 32, a light-blocking structure 22 is provided on its side, thereby blocking and reflecting at least part of the ambient stray light from being incident obliquely on the photosensitive device 42, thereby improving the sensing accuracy of the photosensitive device 42. Furthermore, in an embodiment of the present invention, the light-blocking structure 22 is provided in the same layer as the anode 21 and can be coated in the retaining wall structure 31, thereby eliminating the need for additional process steps and the need for a new film layer structure, thereby simplifying the process steps, saving process costs, and reducing the thickness of the electronic device.

[0055] In another embodiment of the present invention, please refer to Figure 2 The difference between this embodiment and the previous embodiment lies in the arrangement of the light-blocking structure 22 .

[0056] Specifically, in this embodiment, the light-blocking structure 22 is arranged on the flat layer 55, and the thickness of the light-blocking structure 22 is equal to the thickness of the blocking wall structure 31, wherein the light-blocking structure 22 is embedded in the blocking wall structure 31, and the distance from the surface of the light-blocking structure 22 away from the substrate 10 to the substrate 10 is equal to the distance from the surface of the blocking wall structure 31 away from the substrate 10 to the substrate 10, that is, a groove is provided on the side of the blocking wall structure 31 away from the substrate 10, the light-blocking structure 22 is arranged in the groove, and the upper surface of the light-blocking structure 22 is flush with the upper surface of the blocking wall structure 31.

[0057] The cathode layer 60 continuously covers multiple pixel openings 32, and covers the retaining wall structure 31 and the light-blocking structure 22. In this embodiment, the light-blocking structure 22 is also electrically connected to the cathode layer 60, and the light-blocking structure 22 can be distributed in a mesh pattern on the flat layer 55, and can then be reused as an auxiliary electrode of the cathode layer 60 to reduce the surface resistance of the cathode layer 60 and improve the voltage drop phenomenon of the electronic device.

[0058] As described above, in an embodiment of the present invention, the light-blocking structure 22 can be used to block the light emitted by the luminous pixel 41 in one pixel opening 32 from entering the adjacent pixel opening 32, so as to reduce the probability of the light output of the luminous pixel 41 in the other pixel opening 32 being affected, or to improve the sensing accuracy of the photosensitive device 42 in the other pixel opening 32; in addition, when a photosensitive device 42 is provided in a pixel opening 32, a light-blocking structure 22 is provided on its side, thereby blocking and reflecting at least part of the ambient stray light from being incident on the photosensitive device 42 in an oblique direction, so as to improve the sensing accuracy of the photosensitive device 42; further, in an embodiment of the present invention, the light-blocking structure 22 is provided in the same layer as the anode 21 and can be coated in the retaining wall structure 31, thereby eliminating the need for additional process steps and the need for a new film layer structure, thereby simplifying the process steps, saving process costs, and reducing the thickness of the electronic device; relative to the previous embodiment, the light-blocking structure 22 in this embodiment is also reused as an auxiliary electrode of the cathode layer 60, and reduces the surface resistance of the cathode layer 60, so as to improve the voltage drop phenomenon of the electronic device.

[0059] In another embodiment of the present invention, please refer to Figure 3 The difference between this embodiment and the previous embodiment lies in the setting of the light-blocking structure.

[0060] Specifically, in this embodiment, the light-blocking structure 22 is arranged on the flat layer 55, and the thickness of the light-blocking structure 22 is greater than the thickness of the blocking wall structure 31, that is, the light-blocking structure 22 includes a first sub-portion 221 embedded in the blocking wall structure 31 and a second sub-portion 222 having one end connected to the first sub-portion 221 and the other end protruding from the surface of the blocking wall structure 31 on one side away from the substrate 10, and the cathode layer 60 covers multiple pixel openings 32, and covers multiple functional portions 40 and the second sub-portion 222.

[0061] Optionally, the thickness of the second sub-section 222 is greater than 0 and less than or equal to 0.3 of the thickness of the cathode layer 60. In this embodiment, the thickness of the second sub-section 222 is designed, that is, the thickness of the second sub-section 222 should not be too large, otherwise a large slope will be formed at the second sub-section 222, causing the cathode layer 60 to easily break when covering the second sub-section 222. That is, in this embodiment, the thickness of the second sub-section 222 is designed to ensure the process yield of the cathode layer 60 and improve the stability of the electronic device.

[0062] As mentioned above, the embodiment of the present invention can block the light emitted by the luminous pixel 41 in one pixel opening 32 from entering the adjacent pixel opening 32 through the light-blocking structure 22, so as to reduce the probability of the light output of the luminous pixel 41 in the other pixel opening 32 being affected, or improve the sensing accuracy of the photosensitive device 42 in the other pixel opening 32; in addition, when a photosensitive device 42 is provided in a pixel opening 32, a light-blocking structure 22 is provided on its side, thereby blocking and reflecting at least part of the ambient stray light from being incident on the photosensitive device 42 in an oblique direction, thereby improving the sensing accuracy of the photosensitive device 42; further, in the embodiment of the present invention, by providing the light-blocking structure 22 and the anode 21 in the same layer and being coated in the retaining wall structure 31, no additional process steps are required, and no new film layer structure is required, thereby simplifying the process steps, saving process costs, and reducing the thickness of the electronic device; compared with the previous embodiment, the contact area between the cathode layer 60 and the light-blocking structure 22 is increased in this embodiment, thereby further reducing the surface resistance of the cathode layer 60 and improving the voltage drop phenomenon of the electronic device.

[0063] In addition, an embodiment of the present invention further provides a method for manufacturing an electronic device, and the electronic device shown in the first embodiment is used as an example for description.

[0064] For details, please refer to Figure 1 、 Figure 4 as well as Figures 5 to 11 The manufacturing method of the electronic device comprises the following steps:

[0065] S10, providing a substrate 10.

[0066] The substrate 10 may be a glass substrate, and a thin film transistor layer 50 is formed on the substrate 10, wherein the thin film transistor layer 50 includes a thin film transistor 51 formed on the substrate 10 and an insulating layer covering the thin film transistor 51. Specifically, the insulating layer includes a first insulating layer 52 formed on the substrate 10, a second insulating layer 53 formed on the first insulating layer 52, a third insulating layer 54 formed on the second insulating layer 53, and a planar layer 55 formed on the third insulating layer 54. In addition, the thin film transistor 51 includes an active layer formed on the substrate 10 and covered by the first insulating layer 52, a gate formed on the first insulating layer 52 and covered by the second insulating layer 53, and a source and a drain formed on the second insulating layer 53 and covered by the third insulating layer 54. The source and the drain are connected to both sides of the active layer through vias passing through the second insulating layer 53 and the first insulating layer 52.

[0067] Optionally, the first insulating layer 52, the second insulating layer 53 and the third insulating layer 54 may be made of inorganic materials. Specifically, the first insulating layer 52, the second insulating layer 53 and the third insulating layer 54 may each include any one of a silicon nitride film and a silicon oxide film, or a stacked structure including at least one silicon nitride film and at least one silicon oxide film; the flattening layer 55 may be made of an organic material. Specifically, the material of the flattening layer 55 may be a polyimide material, an acrylic material or a siloxane organic photoresist material, etc.

[0068] S20 , forming a conductive functional layer 20 on one side of the substrate 10 , wherein the conductive functional layer 20 includes a plurality of anodes 21 and a light-blocking structure 22 disposed on one side of the substrate 10 , and the light-blocking structure 22 is spaced apart from the anodes 21 .

[0069] A conductive functional layer 20 is formed on the planar layer 55 , and the conductive functional layer 20 includes light-blocking structures 22 and a plurality of anodes 21 that are spaced apart.

[0070] Preferably, the light-blocking structure 22 is disposed around the plurality of anodes 21 , that is, the light-blocking structure 22 is distributed in a grid pattern on the flat layer 55 , and the plurality of anodes 21 are correspondingly distributed in the plurality of grids of the light-blocking structure 22 .

[0071] Specifically, a first metal layer 201 may be formed on the planar layer 55 , and a material of the first metal layer 201 may include at least one of copper, aluminum, and magnesium.

[0072] Next, the first metal layer 201 is etched to obtain a grid-shaped intermediate body 2201 .

[0073] The planarization layer 55 and the third insulating layer 54 may be etched to obtain a via hole passing through the planarization layer 55 and the third insulating layer 54 , exposing the source or drain of the thin film transistor 51 .

[0074] Then, a second metal layer 202 is formed on the flat layer 55, the second metal layer 202 continuously covers the flat layer 55 and the intermediate body 2201, and the second metal layer 202 is etched to obtain a light-blocking structure 22 and a plurality of anodes 21 spaced apart from each other, and the plurality of anodes 21 are distributed in a plurality of grids of the light-blocking structure 22, with one anode 21 correspondingly located in one grid.

[0075] The thickness of the second metal layer 202 is less than that of the first metal layer 201 , and the second metal layer 202 is stacked with the intermediate body 2201 to form a light-blocking structure 22 , and the portion of the second metal layer 202 located within the grid of the grid-shaped intermediate body 2201 is etched and separated to obtain a plurality of anodes 21 .

[0076] Optionally, the thickness of the light-blocking structure 22 is greater than or equal to 100 nm.

[0077] S30 , forming a pixel definition layer 30 on a side of the conductive functional layer 20 away from the substrate 10 . The pixel definition layer 30 includes a plurality of pixel openings 32 , and one pixel opening 32 is disposed corresponding to one anode 21 .

[0078] An organic material layer and an organic material layer 301 are formed on the flat layer 55, and the organic material layer 301 is patterned to obtain a plurality of pixel openings 32, and one pixel opening 32 is arranged corresponding to an anode 21; wherein, a retaining wall structure 31 is formed at a position where no pixel opening 32 is formed, and the retaining wall structure 31 is arranged around each pixel opening 32, that is, the retaining wall structure 31 is distributed in a grid pattern on the flat layer 55, wherein the retaining wall structure 31 covers the light-blocking structure 22, that is, the orthographic projection of the light-blocking structure 22 on the substrate 10 is located within the coverage range of the orthographic projection of the retaining wall structure 31 on the substrate 10.

[0079] S40. A light-emitting functional layer is formed on the side of the pixel definition layer 30 away from the conductive functional layer 20. The light-emitting functional layer includes a plurality of functional parts 40, and a functional part 40 is correspondingly arranged in a pixel opening 32. Each functional part 40 is independently selected from any one of the light-emitting pixel 41 and the photosensitive device 42, wherein the light-blocking structure 22 is formed at least between two adjacent functional parts 40.

[0080] A light-emitting functional layer is formed on the pixel definition layer 30, and the light-emitting functional layer includes multiple functional parts 40 arranged in multiple pixel openings 32, and one functional part 40 is correspondingly arranged in one pixel opening 32, wherein each functional part 40 is independently selected from any one of the light-emitting pixels 41 and the photosensitive device 42.

[0081] It can be understood that in the embodiment of the present invention, a luminous pixel 41 can be set in each pixel opening 32, a photosensitive device 42 can be set in each pixel opening 32, or a luminous pixel 41 can be set in some pixel openings 32, while a photosensitive device 42 can be set in another part of the pixel openings 32. Among them, the luminous pixel 41 can be self-luminous to realize the display function of the electronic device, and the photosensitive device 42 can perform functions such as fingerprint recognition, face recognition and distance sensing. In the embodiment of the present invention, the case where the luminous pixel 41 is set in some pixel openings 32 and the photosensitive device 42 is set in another part of the pixel openings 32 is used as an example for explanation.

[0082] Furthermore, the light-emitting pixels 41 and the photosensitive devices 42 can be evenly distributed in the display area of ​​the electronic device, and the light-emitting pixels 41 and the photosensitive devices 42 can be located in adjacent pixel openings 32 and arranged alternately, or a functional area is set in the electronic device, and the photosensitive device 42 is set in the functional area, then the functional area can perform functions such as fingerprint recognition, facial recognition and distance sensing.

[0083] A cathode layer 60 is formed on the pixel definition layer 30 , and the cathode layer 60 continuously covers the plurality of pixel openings 32 and extends into the plurality of pixel openings 32 to overlap with each functional portion 40 .

[0084] It should be noted that the electronic device provided in the embodiment of the present invention further includes a packaging layer and a cover plate covering the cathode layer 60 , and the above structure can be implemented by conventional means, which will not be described in detail here.

[0085] In summary, in an embodiment of the present invention, a light-blocking structure 22 is provided between adjacent functional portions 40, and the functional portion 40 is a light-emitting pixel 41 or a photosensitive device 42. Thus, between adjacent pixel openings 32, the light-blocking structure 22 can block the light emitted by the light-emitting pixel 41 in one pixel opening 32 from entering the adjacent pixel opening 32, thereby reducing the probability of the light output of the light-emitting pixel 41 in the other pixel opening 32 being affected, or improving the sensing accuracy of the photosensitive device 42 in the other pixel opening 32. In addition, when a photosensitive device 42 is provided in a pixel opening 32, a light-blocking structure 22 is provided on its side, thereby blocking and reflecting at least part of the ambient stray light from being incident obliquely on the photosensitive device 42, thereby improving the sensing accuracy of the photosensitive device 42. Furthermore, in an embodiment of the present invention, the light-blocking structure 22 is provided in the same layer as the anode 21 and can be coated in the retaining wall structure 31, thereby eliminating the need for additional process steps and the need for a new film layer structure, thereby simplifying the process steps, saving process costs, and reducing the thickness of the electronic device.

[0086] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0087] The above is a detailed introduction to an electronic device and a manufacturing method thereof provided in an embodiment of the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present invention. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An electronic device, characterized in that: include: substrate; A conductive functional layer is provided on one side of the substrate and includes a plurality of anodes provided on one side of the substrate; a pixel definition layer, disposed on a side of the conductive functional layer away from the substrate, and comprising a plurality of pixel openings, wherein one pixel opening is disposed corresponding to one anode, and the pixel definition layer further comprises a retaining wall structure disposed around each pixel opening; The light-emitting functional layer includes a plurality of functional parts, wherein one of the functional parts is correspondingly disposed in one of the pixel openings, and each of the functional parts is independently selected from any one of a light-emitting pixel and a photosensitive device; The conductive functional layer further includes a light-blocking structure disposed at least between two adjacent functional portions, the light-blocking structure being embedded in the retaining wall structure and spaced apart from the anode. The thickness of the light-blocking structure is greater than the thickness of the anode. The light-blocking structure is configured to block light emitted by the light-emitting pixel in one of the pixel openings from entering the adjacent pixel opening, and to block ambient light from being incident obliquely on the photosensitive device. The thickness of the light-blocking structure is greater than or equal to the thickness of the retaining wall structure. The electronic device further comprises a cathode layer disposed on a side of the pixel definition layer away from the substrate, and the cathode layer covers the plurality of pixel openings and the light-blocking structure and is electrically connected to the light-blocking structure. The first metal layer forms a grid-shaped intermediate body, the light-blocking structure is formed by stacking the second metal layer and the intermediate body, and a portion of the second metal layer located within the grid of the grid-shaped intermediate body forms a plurality of the anodes.

2. The electronic device according to claim 1, wherein: The light-blocking structure is arranged around each of the functional parts.

3. The electronic device according to claim 1, wherein: The distance between the surface of the light-blocking structure away from the substrate and the substrate is smaller than the distance between the surface of the retaining wall structure away from the substrate and the substrate, and the retaining wall structure covers the light-blocking structure.

4. The electronic device according to claim 1, wherein: The surface of the light-blocking structure away from the substrate is flush with the surface of the retaining wall structure away from the substrate, and the cathode layer covers the side of the light-blocking structure away from the substrate.

5. The electronic device according to claim 1, wherein: The light-blocking structure includes a first sub-portion embedded in the retaining wall structure and a second sub-portion protruding from a surface of the retaining wall structure away from the substrate, and the cathode layer covers the second sub-portion.

6. The electronic device according to claim 5, wherein: The thickness of the second sub-portion is greater than 0 and less than or equal to 0.3 of the thickness of the cathode layer.

7. The electronic device according to claim 1, wherein: The thickness of the light-blocking structure is greater than or equal to 100 nm.

8. A method for manufacturing an electronic device, characterized in that: The following steps are involved: providing a substrate; forming a conductive functional layer on one side of the substrate, wherein the conductive functional layer includes a plurality of anodes and a light-blocking structure provided on one side of the substrate, and the light-blocking structure is spaced apart from the anodes; A pixel definition layer is formed on a side of the conductive functional layer away from the substrate, wherein the pixel definition layer includes a plurality of pixel openings, and each pixel opening is corresponding to each anode. The pixel definition layer also includes a retaining wall structure disposed around each pixel opening, wherein the light-blocking structure is embedded in the retaining wall structure, and the thickness of the light-blocking structure is greater than or equal to the thickness of the retaining wall structure. A light-emitting functional layer is formed on a side of the pixel definition layer away from the conductive functional layer, the light-emitting functional layer including a plurality of functional portions, and one of the functional portions is correspondingly disposed within one of the pixel openings, each of the functional portions being independently selected from any one of a light-emitting pixel and a photosensitive device, wherein the light-blocking structure is formed at least between two adjacent functional portions, and the light-blocking structure is configured to block light emitted by the light-emitting pixel within one of the pixel openings from entering the adjacent pixel opening, and to block ambient light from being incident obliquely on the photosensitive device; forming a cathode layer on the pixel definition layer, wherein the cathode layer covers the plurality of pixel openings and the light-blocking structure and is electrically connected to the light-blocking structure; The step of forming a pixel definition layer on a side of the conductive functional layer away from the substrate comprises: forming a first metal layer, and etching the first metal layer to obtain a grid-shaped intermediate; A second metal layer is formed and etched. The second metal layer and the intermediate body are stacked to form the light-blocking structure. A portion of the second metal layer located within the grid of the grid-shaped intermediate body forms a plurality of anodes.

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