Non-destructive lithographic patterning of quantum dots and apparatus

Abstract

The application provides a lossless photolithography patterning method and device for quantum dots, which comprises the following steps: preparing a thin film of quantum dots and a mixed solution containing a photosensitive cross-linking agent with a bis-aziridine group; placing the thin film under ultraviolet light, and making the thin film undergo a cross-linking reaction in an exposed area of the thin film by means of a photomask; and cleaning the thin film with a preset solvent to elute and remove unexposed areas of the thin film to develop the thin film, so as to obtain a patterned quantum dot thin film. The application utilizes a photodecomposition reaction of the photosensitive cross-linking agent to cross-link surface ligands of the quantum dots, avoids the introduction of a complex photoresist, realizes photo-induced patterning of the quantum dots, is compatible with a currently widely used photolithography machine system with different ultraviolet wavelengths, and is easy to implement.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of display, more particularly, to a non-destructive photolithography patterning method and device of quantum dots. BACKGROUND

[0002] Based on the quantum confinement effect, quantum dots have excellent light-emitting properties such as wide-band absorption, narrow-band emission and continuously adjustable peak position. Meanwhile, quantum dots have solution processability, which avoids the use of high-cost vacuum equipment, thus making it practical for mass production of quantum dots in the fields of display and lighting, solar cells and photoelectric detection. Patterning of quantum dots is pixelization of solution-state quantum dots, which is a necessary step for quantum dots to become shaped optoelectronic devices or commercial products.

[0003] The existing solutions that can realize patterning of quantum dots generally use traditional photoresists, but the introduction of photoresists will reduce the light-emitting properties of quantum dots, thus there is an urgent need for a new and non-destructive patterning method of quantum dots. SUMMARY

[0004] In view of the above problems, the purpose of the present application is to provide a non-destructive photolithography patterning method and device of quantum dots without damaging the light-emitting properties of quantum dots, which crosslinks the surface ligands of quantum dots by using the photodecomposition reaction of a photosensitive crosslinking agent, avoids the introduction of complex photoresists, and realizes photopatterning of quantum dots.

[0005] According to one aspect of the present application, a non-destructive photolithography patterning method of quantum dots is provided, comprising:

[0006] forming a thin film from a mixed solution of quantum dots and a photosensitive crosslinking agent containing a bis-aziridine group;

[0007] placing the thin film under ultraviolet light, and causing crosslinking reaction in the exposed areas of the thin film receiving the ultraviolet light irradiation with the aid of a photomask;

[0008] cleaning the thin film with a preset solvent to elute and remove the unexposed areas of the thin film for development, to obtain a patterned quantum dot thin film.

[0009] According to another aspect of the present application, a non-destructive photolithography patterning device of quantum dots is provided, which is used to implement the above-mentioned non-destructive photolithography patterning method of quantum dots, comprising:

[0010] a thin film preparation unit for forming a thin film from a mixed solution of quantum dots and a photosensitive crosslinking agent containing a bis-aziridine group;

[0011] an ultraviolet lithography unit for placing the thin film under ultraviolet light, and causing crosslinking reaction in the exposed areas of the thin film receiving the ultraviolet light irradiation with the aid of a photomask;

[0012] a cleaning unit for cleaning the thin film with a preset solvent to elute and remove the unexposed area of the thin film for development, to obtain a patterned quantum dot thin film.

[0013] By using the above-mentioned non-destructive photolithography patterning method and device of quantum dots according to the present application, the surface ligands of quantum dots are cross-linked by the photodecomposition reaction of the photosensitive cross-linking agent containing a bis-aziridine group, avoiding the introduction of a complex photoresist, realizing the photo-patterning of quantum dots, and the non-destructive photolithography patterning method and device of quantum dots can be applied to the patterning of quantum dot thin films with different components, properties and structures, can realize the high-resolution patterning of quantum dots with different light-emitting colors and maintain their high fluorescence quantum yield, and can be applied to optoelectronic devices in the field of quantum dot-based display and lighting.

[0014] To the accomplishment of the foregoing and related ends, one or more aspects of the application comprise the features hereinafter fully described and particularly pointed out in the claims. The following description and the annexed drawings set forth in detail certain illustrative aspects of the application. These aspects are indicative, however, of but a few of the various ways in which the principles of the application can be employed. Other aspects and advantages of the application will be apparent from the following detailed description and the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0015] Other objects and results of the application will become more fully apparent from the following detailed description, taken in conjunction with the accompanying drawings, wherein:

[0016] Figure 1 Flow chart of the non-destructive photolithography patterning method of quantum dots according to the embodiment of the present application;

[0017] Figure 2 Schematic diagram of the non-destructive photolithography patterning process of quantum dots according to the embodiment of the present application;

[0018] Figure 3 UV-Vis absorption spectrum of M570;

[0019] Figure 4 Fluorescence microscope photo of the patterned quantum dots under 254 nm UV light in air according to the embodiment of the present application

[0020] Figure 5 Fluorescence microscope photo of the patterned quantum dots under 254 nm UV light in nitrogen according to the embodiment of the present application

[0021] Figure 6A patterned quantum dot fluorescence microscope photo under 365 nm UV light according to an embodiment of the present application;

[0022] Figure 7 A material structure and energy level diagram of a quantum dot electroluminescent light emitting diode device according to an embodiment of the present application;

[0023] Figure 8 A current density-voltage-luminance (J-V-L) curve diagram of a QLED according to an embodiment of the present application;

[0024] Figure 9 A block diagram of a non-destructive lithographic patterning apparatus for quantum dots according to an embodiment of the present application.

[0025] The same reference numbers in all the drawings indicate similar or corresponding features or functions. DETAILED DESCRIPTION

[0026] In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more embodiments. It can be apparent, however, that such embodiment(s) can be practiced without using all the specific details.

[0027] In order to overcome the defects of using photoresist for quantum dot patterning in the prior art, the present application uses the photodecomposition reaction of a photosensitive crosslinking agent to crosslink the surface ligands of quantum dots, thereby realizing photo-induced patterning of quantum dots. Since the photo-crosslinking reaction only occurs on the surface of quantum dots, quantum dot films of various different components, properties and structures can be patterned. Compared with the conventional photoresist method, the present application does not need to add photoresist and can basically maintain the original optical properties of quantum dots.

[0028] The specific embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0029] Figure 1 A flow chart of a non-destructive lithographic patterning method for quantum dots according to the present application is shown, Figure 2 A process diagram of a non-destructive lithographic patterning method for quantum dots according to an embodiment of the present application.

[0030] As Figure 1 and Figure 2 As shown in the drawings, the non-destructive lithographic patterning method for quantum dots provided by the present application comprises the following steps:

[0031] S110: Forming a thin film of quantum dots and a mixed solution of a photosensitive crosslinking agent containing a bis-aziridine group;

[0032] S120: exposing the thin film to ultraviolet light, and cross-linking the exposed areas of the thin film by means of a photomask;

[0033] S130: cleaning the thin film with a pre-set solvent to elute and remove the unexposed areas of the thin film to develop a patterned quantum dot thin film.

[0034] In one embodiment of the present application, the photosensitive cross-linking molecule containing a diazirine group contains at least two diazirine groups, and the general formula of the diazirine group is as follows:

[0035]

[0036] In the formula, X is a compound that stabilizes the carbene intermediate obtained by removing nitrogen from the compound containing the diazirine group and enables the insertion reaction, such as any of the functional groups of Cl, H, CH3, CF3, PhCF3, F, and OCH3; R is any functional group containing a hydrocarbon group, an ester group, an amide bond, a benzene ring, or an ether bond; n≥2, preferably n=2, 3, or 4; and for the photosensitive cross-linking molecule, as long as it has a significant photoresponse under 200-500 nm ultraviolet light, a significant photoresponse means that the molar extinction coefficient of the diazirine molecule is greater than the molar extinction coefficient required for photolithography, the higher the molar extinction coefficient, the more light is absorbed, and the higher the cross-linking efficiency. In one embodiment of the present application, the molar extinction coefficient of the diazirine group in the photosensitive cross-linking molecule under 200-500 nm ultraviolet light is greater than 1 cm -1 M -1 .

[0037] Diazirine decomposes under ultraviolet light to release nitrogen and generate an intermediate singlet carbene, which can insert into the adjacent carbon-hydrogen bond to form a carbon-carbon single bond. When the photosensitive molecule contains multiple diazirines, the diazirines can act as bridging groups to cross-link the photosensitive molecule with any organic molecule containing a carbon-hydrogen bond. The carbon-hydrogen insertion reaction of the diazirine photo-generated carbene has been fully demonstrated in the fields of protein molecule modification, polymer cross-linking, organic semiconductor patterning, and human-like skin research, proving the feasibility of diazirine as a photo-crosslinking group. The surface ligand of quantum dots is composed of organic molecules rich in carbon-hydrogen bonds, providing sufficient conditions for the photo-crosslinking reaction of diazirine. Therefore, the cross-linking of quantum dots can be achieved through the photo-decomposition of diazirine, changing its solubility and realizing photo-patterning.

[0038] The reaction mechanism of the photo-decomposition of diazirine to generate carbene and the carbon-hydrogen insertion of carbene is as follows:

[0039]

[0040] Further, when the carbon atom in the diazirine is connected with the benzene ring through a trifluoromethyl group, the reactivity can be improved, and the efficiency of the photo-generated carbene carbon-hydrogen insertion reaction can be improved, so in one specific implementation of the present application, the diazirine molecule of the following general structure is preferred:

[0041]

[0042] wherein R can be any functional group, for example, can contain a hydrocarbon group, an ester group, an amide bond, a benzene ring, an ether bond, etc., n≥2, preferably 2, 3 or 4, as long as the photosensitive crosslinking molecule has a significant photoresponse under 200-500 nm ultraviolet light, and the significant photoresponse means that the molar extinction coefficient of the diazirine molecule is greater than 100 cm -1 M -1 where M represents mol / L.

[0043] wherein the photosensitive crosslinking molecule can be a molecule containing two diazirines:

[0044]

[0045] or the photosensitive crosslinking molecule is a molecule containing three diazirines:

[0046]

[0047] or the photosensitive crosslinking molecule is a molecule containing four diazirines:

[0048]

[0049] wherein the photosensitive crosslinking molecule is preferably a photosensitive crosslinking molecule without alkyl carbon-hydrogen bonds in itself, so that the photo-crosslinking reaction of the molecule itself can be effectively avoided, and the crosslinking efficiency with the quantum dot surface ligand is improved, for example, the following photosensitive crosslinking molecule is selected:

[0050]

[0051] In one specific embodiment of the present application, taking the 3,3'-((perfluorobutane-1,4-diyl)bis(4,1-phenylene))bis(3-(trifluoromethyl)-3H-diazirine) molecule (according to the molecular weight, the molecule is named as M570) as an example, the photo-crosslinking reaction induced by the diazirine photo-generated carbene is realized.

[0052] The M570 can be synthesized by the existing method, and the synthesis process is as follows: 1 H、 19The F NMR information is as follows: 1 H NMR (400 MHz, CDC13): δ 7.60 (d, 4H), 7.31 (d, 4H); 19 F NMR (377 MHz, CDC13): δ -150.61 (m, 4F), -138.06 (m, 4F). The molecular structure of M570 is shown as follows:

[0053]

[0054] The UV-Vis absorption spectrum of M570 is shown in Figure 3 where there are double absorption peaks at 269 nm and 345 nm, and the molar absorption coefficients at 254 nm and 365 nm are 6.5 x 104cm-1M-1and 3.2 x 104cm-1M-1, respectively. 2 cm -1 M -1 and 3.2 x 104cm-1M-1. 2 cm -1 M -1 .

[0055] The surface ligand of the quantum dot can be an organic molecule containing a carbon-hydrogen chain, including but not limited to oleic acid, oleylamine, dodecyl mercaptan, tetradecyl phosphonic acid, tri-n-octyl phosphine, cetyl trimethyl ammonium bromide, polyethylene glycol, or polyvinyl pyrrolidone.

[0056] According to the photoresist-free photopatterning method of the quantum dot film of the embodiment of the present application, in step S110, the quantum dot can be a II-VI group quantum dot, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgSe, HgTe, HgS, Hg x Cd 1-x Te, Hg x Cd 1-x S, Hg x Cd 1-x Se, Hg x Zn 1-x Te, Cd x Zn 1-x Se, or Cd x Zn 1-x S, wherein 0 < x < 1; or a III-V group quantum dot, such as InP, InAs, InSb, GaAs, GaP, GaN, GaSb, InN, InSb, AlP, AlN, AlAs; or a VI-VI group quantum dot, such as PbS, PbSe, PbTe; or the quantum dot can be a quantum dot with a core-shell structure, including CdSe@ZnS, CdSe@CdS, InP@ZnS, CdTe@CdSe, CdSe@ZnTe, ZnTe@CdSe, ZnSe@CdS, or Cd1-x Zn x S@ZnS; or perovskite quantum dots or nanocrystals of ABX3 type, A is CH3NH3 + (methylamine), NH2CH=NH2(formamidine), Cs + one or more of Pd, Sn 2+ , Sn 2+ one or two of Cl - , Br - , I - one or more of, including CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbI3, CsPbBr3, CsPbCl3, CsPbI3; or other quantum dots such as CuInS2, CuInSe2, AgInS2, etc. as long as the quantum dots coated with organic ligands on the surface can be used.

[0057] The photoresist-free photopatterning method of the quantum dot film according to the embodiment of the present application, wherein in the steps S110 and S130, the dielectric constant of the photosensitive crosslinking agent and the pre-set solvent cleaning is less than 10, including but not limited to toluene, chlorobenzene, n-hexane, n-octane, n-heptane, cyclohexane, dichloromethane, chloroform or tetrahydrofuran. The surface ligand of the quantum dot in the embodiment of the present application can form a stable colloid in the photosensitive crosslinking agent, and the colloid concentration can cover 1-1000 mg / mL, and a thin film is formed through a solution process. Preferably, in the step S110, after the quantum dots are dispersed in the solvent, the concentration is 5-200 mg / mL.

[0058] The photoresist-free photopatterning method of the quantum dot film of the present application will be further described in detail below in combination with several specific embodiments.

[0059] Example 1: patterning under 254 nm

[0060] According to the patterning process, the light source is selected as 254 nm ultraviolet light, and the light dose is preferably greater than 10 mJ / cm 2 ; the specific patterning process is: in the air, spin-coat the toluene mixed solution of quantum dots (20 mg / mL) and M570 (1 mg / mL) at 2000 revolutions per minute for 30 seconds, then expose under 254 nm ultraviolet light with a dose of 200 mJ / cm 2 , and develop by elution with toluene solution to obtain the fluorescence microscope photos of red, green and blue as shown in Figure 4 .

[0061] Example 2: patterning under 254 nm

[0062] According to the patterning process, in the glove box, under the inert gas atmosphere, the light source is selected as 365 nm ultraviolet light, preferably the light dose is greater than 10 mJ / cm 2 . The specific patterning process is: in the glove box, under the nitrogen atmosphere: spin-coat the toluene mixed solution of quantum dots (20 mg / mL) and M570 (1 mg / mL) at 2000 rpm for 30 seconds, then expose under 365 nm ultraviolet light with a dose of 200 mJ / cm 2 , and develop by toluene solution to obtain the red-green-blue fluorescence microscope photos as shown in Figure 5 .

[0063] Example Three: 365 nm patterning results

[0064] According to the patterning process, in the glove box, under the inert gas atmosphere, the light source is selected as 365 nm ultraviolet light, preferably the light dose is greater than 10 mJ / cm 2 . The specific patterning process is: in the glove box, under the nitrogen atmosphere: spin-coat the toluene mixed solution of quantum dots (20 mg / mL) and M570 (1 mg / mL) at 2000 rpm for 30 seconds, then expose under 365 nm ultraviolet light with a dose of 200 mJ / cm 2 , and develop by toluene solution to obtain the red-green-blue fluorescence microscope photos as shown in Figure 6 .

[0065] Example Four: 365 nm cannot be patterned in air (which can be used as a comparative example of Example Three to illustrate that 365 nm cannot be patterned in air due to the presence of oxygen)

[0066] According to the patterning process, in the air, the light source is selected as 365 nm ultraviolet light, preferably the light dose is greater than 10 mJ / cm 2 , for example, under the following conditions: spin-coat the toluene mixed solution of quantum dots (20 mg / mL) and M570 (1 mg / mL) at 2000 rpm for 30 seconds, then expose under 365 nm with a dose of 1000 mJ / cm 2 , and develop by toluene solution to obtain the red-green-blue fluorescence microscope photos as shown in .

[0067] It is speculated that the reason why 365 nm cannot be patterned in air is that, compared with 254 nm light, 365 nm light produces more triplet carbene, which is quenched by triplet oxygen, while 254 nm light produces more singlet carbene, which cannot be quenched by triplet oxygen, so 254 nm can be patterned in air.

[0068] Example Five: Determination of fluorescence quantum yield

[0069] The sample was prepared in a glove box: 100 microliters of a toluene mixed solution of quantum dots (20 mg / mL) and M570 (1 mg / mL) was spin-coated on a quartz square substrate with a side length of 2 centimeters at a rotation speed of 2000 revolutions per minute for 30 seconds, and then exposed to light with different wavelengths for 200 mJ / cm 2 The fluorescence quantum yield data in Table 1 below show that the quantum dots under the diazirine patterning condition still have a relatively high fluorescence quantum yield, and the relative fluorescence quantum yield is as high as 90% or more, which is significantly better than other patterning methods. For example, in the patent with the publication number CN111781803A, photo-generated azido alkene with an azido functional group and the surface ligand of the quantum dots can also be used for carbon-hydrogen insertion reaction to realize the photolithographic patterning of the quantum dots. However, compared with the blank control group, the relative fluorescence quantum yield of the experimental group under the patterning condition is maintained at about 60% at most, which is much lower than 90% of the present application. Therefore, one of the beneficial effects of the present application is that the fluorescence quantum yield of the material can still be basically maintained after patterning.

[0070] Experimental group Quantum dots 365 nm light patterning quantum dots 254 nm patterning quantum dots Absolute fluorescence quantum yield 60 56 56 Relative fluorescence quantum yield 1 0.93 0.93

[0071] Table 1: Fluorescence quantum yield test results

[0072] Example Six: Device construction and characterization of quantum dot light-emitting diode (QLED)

[0073] Figure 7 The device material structure (A) and energy level (B) of the quantum dot light-emitting diode (QLED) according to the embodiment of the present application are shown in the schematic diagram. The QLED is prepared according to the structure shown in A of Figure 7 The energy level of the obtained QLED is shown in B of Figure 7 The current density-voltage-brightness (J-V-L) curve schematic diagram of the QLED shown in Figure 8 The J-V-L curve of the QLED mixed with M570 and exposed to 365 nm light is basically consistent with that of the QLED of the blank control group (without adding M570), and the measured external quantum efficiency is as high as 12%, and the T95 lifetime at 1000 nit is more than 4000 hours, which is significantly higher than the lifetime (less than 2000 hours) of the QLED device prepared by using the azido method for crosslinking, and shows a relatively high device efficiency.

[0074] As can be seen from the above description of the embodiments, the non-destructive photolithographic patterning method of quantum dots provided by the application performs the patterning on the surface of quantum dots through a photo-crosslinking reaction, and since the photo-crosslinking reaction only occurs on the surface of quantum dots, the quantum dot thin film of various components, properties and structures can be patterned, the application range is effectively expanded, it is compatible with the widely used photolithographic machine systems of different ultraviolet wavelengths, such as 254 nm and 365 nm, and is easy to implement; and the process steps of the application are simple, for example, in order to construct a red-green-blue three-color patterned pixel, the traditional photoresist method needs 21 steps, while the application only needs 9 steps, so the cost can be reduced and the efficiency can be improved; compared with the traditional photoresist method, the application does not need to add photoresist, and the original optical properties of quantum dots can be kept to the maximum extent.

[0075] As described above, the non-destructive photolithographic patterning method of quantum dots according to the application, corresponding to the method, the application also provides a non-destructive photolithographic patterning equipment of quantum dots.

[0076] Figure 9 A block diagram of the non-destructive photolithographic patterning equipment 900 of quantum dots according to the application is shown. As shown, the non-destructive photolithographic patterning equipment 900 of quantum dots includes a thin film preparation unit 910, an ultraviolet photolithographic unit 920 and a cleaning unit 930. Figure 9

[0077] The thin film preparation unit 910 is used to prepare a thin film from a mixed solution of quantum dots and a photosensitive crosslinking agent containing a bis-aziridine group; the ultraviolet photolithographic unit 920 is used to place the thin film under ultraviolet light and make the thin film undergo a crosslinking reaction in the exposed area receiving the ultraviolet light irradiation by means of a photomask; and the cleaning unit 930 is used to clean the thin film with a pre-set solvent to elute and remove the unexposed area of the thin film for development, so as to obtain a patterned quantum dot thin film.

[0078] The specific implementation scheme of the non-destructive photolithographic patterning equipment 900 of quantum dots described above can be referred to the foregoing embodiments of the non-destructive photolithographic patterning method of quantum dots, which will not be described here.

[0079] The non-destructive photolithographic patterning method and device of quantum dots according to the application are described above with reference to the accompanying drawings by way of example. However, those skilled in the art should understand that various improvements can be made to the network security access control method and device proposed by the application without departing from the content of the application. Therefore, the protection scope of the application should be determined by the content of the appended claims.​

Claims

1. A method for non-destructive photolithographic patterning of quantum dots, comprising: forming a thin film of quantum dots and a mixed solution of a photosensitive crosslinking agent containing a bis-azirine group; exposing the thin film to ultraviolet light and crosslinking the exposed areas of the thin film by means of a photomask; developing the thin film by washing it with a predetermined solvent to elute and remove the unexposed areas of the thin film, thereby obtaining a patterned quantum dot thin film; wherein the relative fluorescence quantum yield of the patterned quantum dots is more than 90%. The photosensitive crosslinking molecule of the photosensitive crosslinking agent contains at least two bis-azirine groups, and the general formula of the bis-azirine group is as follows: wherein X is a group that stabilizes the carbene intermediate obtained by removing nitrogen from the compound containing the bis-azirine group and enables insertion reaction; R is any functional group containing a hydrocarbon group, an ester group, an amide bond, a benzene ring, or an ether bond; n≥2; and, 2. The method of non-destructive lithographic patterning of quantum dots of claim 1, wherein, X is any functional group of Cl, H, CH3, CF3, PhCF3, F, OCH3, n=2, 3, or 4. 4.The method for non-destructive photolithographic patterning of quantum dots according to claim 2, wherein the general structure of the photosensitive crosslinking molecule containing the bis-azirine group is as follows: The molar extinction coefficient of the bisaziridine group in the photosensitive crosslinking molecule is greater than 1 cm -1 M -1 .

3. The method of non-destructive lithographic patterning of quantum dots of claim 2, wherein, wherein R is any functional group containing a hydrocarbon group, an ester group, an amide bond, a benzene ring, or an ether bond, and n≥2. The photosensitive crosslinking molecule is a molecule containing two bis-azirines: The molar extinction coefficient of the bisaziridine group in the photosensitive crosslinking molecule is greater than 100 cm -1 M -1 .

5. The method of non-destructive lithographic patterning of quantum dots of claim 2, wherein, Alternatively, the photosensitive crosslinking molecule is a molecule containing three bis-azirines: Alternatively, the photosensitive crosslinking molecule is a molecule containing four bis-azirines:

6. The method of non-destructive lithographic patterning of quantum dots of claim 5, wherein, The photosensitive crosslinking molecule is a photosensitive crosslinking molecule that does not have an alkyl carbon-hydrogen bond itself. ； The quantum dots are quantum dots coated with organic ligands on the surface, and the surface ligands of the quantum dots are organic molecules containing carbon-hydrogen bonds. ； The dielectric constant of the predetermined solvent is less than 10, including toluene, chlorobenzene, n-hexane, n-octane, n-heptane, cyclohexane, dichloromethane, chloroform, or tetrahydrofuran. 。 7. The method of non-destructive lithographic patterning of quantum dots of claim 4, wherein, The concentration of the colloidal gel formed by the organic ligands on the surface of the quantum dots in the photosensitive crosslinking agent is 1-1000 mg / mL, and the colloidal gel forms the thin film through a solution process.

8. The method of non-destructive lithographic patterning of quantum dots of claim 5, wherein, ​ 9. The method of non-destructive lithographic patterning of quantum dots of claim 8, wherein, The quantum dots include II-VI quantum dots, III-V quantum dots, quantum dots with core-shell structure, and ABX3 type perovskite quantum dots or nanocrystals; wherein A is one or more of CH3NH3 + , NH2CH=NH2, Cs + , and B is one or two of Pb 2+ , Sn 2+ , and X is one or more of Cl - , Br - , and I - .

10. The method of non-destructive lithographic patterning of quantum dots of claim 9, wherein, ​ 11. The method of non-destructive lithographic patterning of quantum dots of claim 8, wherein, ​

Images