Wafer probe card and wafer testing apparatus

Abstract

The application relates to the field of electronic integrated circuit detection, and discloses a wafer probe card and wafer detection equipment, which comprises a device probe and a monitoring probe cluster; the monitoring probe cluster comprises a main probe and a first auxiliary probe; the lowermost end of the first auxiliary probe is higher than the device probe, and the lowermost end of the main probe is lower than the device probe; after the main probe contacts the wafer to be tested, the main probe slides along a first direction as the wafer probe card continues to be pressed down; when the main probe contacts the wafer to be tested, and the distance between the wafer probe card and the wafer to be tested continues to be shortened by a first distance, the main probe contacts and connects with the first auxiliary probe, thereby forming an alarm loop. The application avoids the bending of the probe on the wafer probe card, guarantees the service life of the wafer probe card, has low equipment cost, is convenient to use, has low circuit transformation cost, and has high universality.

Description

Technical Field

[0001] This invention relates to the field of electronic integrated circuit testing, and in particular to a wafer probe card and wafer testing equipment. Background Technology

[0002] Before photonic and electronic integrated circuit wafers are diced into chips and packaged into products, they typically undergo wafer-level inspection. Wafer-level inspection is crucial for reducing chip inspection costs, ensuring product yield, and enabling companies to control product costs. Currently, using probe cards for wafer-level device inspection is a very common method in semiconductor device testing. In addition, in chip testing, electrical signal connections can be achieved through gold wire bonding or probe card pin insertion. After testing, removing the gold wire balls bonded to the metal electrode plates can damage the metal electrode plates. To achieve non-destructive testing, probe card pin insertion is also frequently used for chip inspection.

[0003] The probe tips in probe cards are typically very small and easily damaged. During use, it's easy for the probe to press too hard, meaning it continues to press down too far after contacting the wafer, which can easily cause metal fatigue and damage to the probe. Currently, several methods exist to effectively monitor the distance between the probe and the wafer, such as installing pressure sensors on the probe holder to determine the pressing distance based on the pressure applied by the probe; installing laser rangefinders; and installing capacitive rangefinders. However, both sensors and rangefinders significantly increase equipment production and maintenance costs, and introducing new precision sensors or rangefinders can lead to overly cumbersome installation and debugging processes.

[0004] Therefore, how to provide a simple and easy-to-use method for monitoring the distance between a probe card and a wafer has become an urgent problem to be solved in the existing technology. Summary of the Invention

[0005] The purpose of this invention is to provide a wafer probe card and wafer inspection equipment to solve the problems of high cost, cumbersome installation and debugging process, and inconvenience in the existing technology for monitoring the distance between the probe card and the wafer.

[0006] To address the aforementioned technical problems, this invention provides a wafer probe card, comprising device probes and a cluster of monitoring probes;

[0007] The device probe can be connected to the microcircuit on the surface of the wafer under test to form a test loop for testing the wafer under test;

[0008] The monitoring probe cluster includes a main probe and a first auxiliary probe;

[0009] The lowest point of the first auxiliary probe is higher than the device probe, and the lowest point of the main probe is lower than the device probe;

[0010] The main probe is an inclined probe. After the main probe contacts the wafer to be tested, as the wafer probe card continues to press down, the main probe slides along a first direction. The first auxiliary probe is located on the sliding path of the main probe along the first direction.

[0011] When the main probe contacts the wafer under test, and the distance between the wafer probe card and the wafer under test continues to shorten by a first distance, the main probe contacts and connects with the first auxiliary probe to form an alarm circuit.

[0012] Optionally, in the wafer probe card, the monitoring probe cluster further includes a second auxiliary probe;

[0013] The second auxiliary probe contacts and connects with the main probe when the main probe is not in contact with the wafer under test, forming a standby circuit;

[0014] When the main probe contacts the wafer to be tested and begins to slide along the first direction, the contact between the second auxiliary probe and the main probe is broken.

[0015] Optionally, the wafer probe card further includes an edge control cluster;

[0016] The edge control cluster is located at the edge of the wafer probe card, and the edge control cluster includes edge extension probes and edge auxiliary probes;

[0017] The edge extension probe extends downwards from the edge of the wafer probe card's projection. When the wafer probe card touches an obstacle in the horizontal direction, the edge extension probe is squeezed by the obstacle and bends in the second direction. The edge auxiliary probe is located on the deformation path of the edge extension probe bending in the second direction.

[0018] When the edge extension probe bends in the second direction to the first deformation, the edge extension probe and the edge auxiliary probe make contact and connect to form a contact warning circuit.

[0019] Optionally, in the wafer probe card, the main probe is a flexible probe;

[0020] When the wafer probe card includes the edge control cluster, the edge extension probe is a flexible probe.

[0021] Optionally, in the aforementioned wafer probe card, the flexible probe is a beryllium copper alloy probe.

[0022] Optionally, in the wafer probe card, the first auxiliary probe and / or the second auxiliary probe are tungsten needles or rhenium-tungsten needles;

[0023] When the wafer probe card includes the edge control cluster, the edge auxiliary probe is a tungsten needle or a rhenium-tungsten needle.

[0024] Optionally, in the wafer probe card, the angle between the main probe and the vertical direction ranges from 8 degrees to 12 degrees, including the endpoint value.

[0025] Optionally, in the wafer probe card, the tip of the main probe is provided with a buffer cap.

[0026] Optionally, in the wafer probe card, the projection extension direction of the main probe on a plane perpendicular to the first direction is different from the projection extension direction of the other auxiliary probes.

[0027] When the wafer probe card includes the edge control cluster, the extension direction of the projection of the edge extension probe onto a plane perpendicular to the second direction is different from the extension direction of the projection of the edge auxiliary probe.

[0028] A wafer inspection device, the wafer inspection device comprising any of the above-mentioned wafer probe cards.

[0029] The wafer probe card provided by this invention includes a device probe and a cluster of monitoring probes. The device probe can be connected to a microcircuit on the surface of the wafer under test to form a test loop for testing the wafer under test. The monitoring probe cluster includes a main probe and a first auxiliary probe. The lowest point of the first auxiliary probe is higher than the device probe, and the lowest point of the main probe is lower than the device probe. The main probe is an inclined probe. After the main probe contacts the wafer under test, as the wafer probe card continues to press down, the main probe slides along a first direction, and the first auxiliary probe is located on the sliding path of the main probe along the first direction. When the main probe contacts the wafer under test, and the distance between the wafer probe card and the wafer under test continues to shorten by a first distance, the main probe and the first auxiliary probe connect to form an alarm loop.

[0030] This invention only requires installing several probes on the wafer probe card to measure the distance between the wafer probe card and the wafer under test. When the distance is too close, a new electrical signal circuit is established for subsequent alarms or signal control, preventing probe bending and ensuring the lifespan of the wafer probe card. The equipment has low cost and requires only simple testing and alignment of the probes for debugging and maintenance, making it convenient to use. When the wafer probe card is pressed down (or the wafer under test is raised) to a certain extent, the main probe and the first auxiliary probe directly contact each other to form an alarm circuit. In other words, the main probe and the first auxiliary probe can act as a circuit switch, facilitating the connection of external reactor circuits, such as audible and visual alarms, or directly controlling the wafer probe card to stop pressing down. Circuit modification costs are low, and it has high versatility. This invention also provides a wafer inspection device with the above-mentioned beneficial effects. Attached Figure Description

[0031] To more clearly illustrate the technical solutions of the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0032] Figure 1 A schematic diagram of a specific embodiment of the wafer probe card provided by the present invention;

[0033] Figure 2 A schematic diagram of another specific embodiment of the wafer probe card provided by the present invention;

[0034] Figure 3 This is a cross-sectional view of the steps in the operation of the wafer probe card provided by the present invention;

[0035] Figure 4 A circuit diagram illustrating a specific embodiment of the wafer probe card provided by the present invention;

[0036] Figure 5 A circuit diagram illustrating another specific embodiment of the wafer probe card provided by the present invention;

[0037] Figure 6 This is a circuit diagram of a specific embodiment of the wafer inspection equipment provided by the present invention. Detailed Implementation

[0038] To enable those skilled in the art to better understand the present invention, the invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0039] The core of this invention is to provide a wafer probe card, the structural schematic diagram of one specific embodiment of which is shown below. Figure 1 As shown, this is referred to as Specific Implementation Method 1, which includes device probe 10 and monitoring probe cluster;

[0040] The device probe 10 can be connected to the microcircuit on the surface of the wafer to be tested to form a test loop for testing the wafer to be tested;

[0041] The monitoring probe cluster includes a main probe 21 and a first auxiliary probe 22;

[0042] The lowest point of the first auxiliary probe 22 is higher than the device probe 10, and the lowest point of the main probe 21 is lower than the device probe 10;

[0043] The main probe 21 is an inclined probe. After the main probe 21 contacts the wafer to be tested, as the wafer probe card continues to press down, the main probe 21 slides along a first direction. The first auxiliary probe 22 is located on the sliding path of the main probe 21 along the first direction.

[0044] When the main probe 21 contacts the wafer under test, and the distance between the wafer probe card and the wafer under test continues to shorten by a first distance, the main probe 21 contacts and connects with the first auxiliary probe 22 to form an alarm circuit.

[0045] Figure 1 The probes in the samples can be divided into two parts, the body and the tip, with the bend as the dividing line. Figure 1 Other structures of the wafer probe card described in the figure (such as PCB board, epoxy resin, etc.) are simplified and represented by cubes. The same applies to the following figures and will not be described again.

[0046] In a preferred embodiment, the main probe 21 is a flexible probe. The main probe 21 in this application needs to withstand a certain external force and deform in the first direction. Therefore, using a flexible probe can greatly improve the service life of the main probe 21, while avoiding scratching the surface of the wafer under test and ensuring the integrity of the wafer. Furthermore, the flexible probe is a beryllium copper alloy probe, which has good electrical conductivity and excellent ductility.

[0047] In addition, the first auxiliary probe 22 is a tungsten needle or a rhenium-tungsten needle. Tungsten needles or rhenium-tungsten needles are inexpensive and low-cost while ensuring a certain level of conductivity. Since the first auxiliary probe 22 does not come into contact with the wafer to be tested, a hard probe can be selected.

[0048] Furthermore, the angle between the main probe 21 and the vertical direction ranges from 8 degrees to 12 degrees, including the endpoint values, such as any one of 8.0 degrees, 10.2 degrees, or 12.0 degrees. It should be noted that if the angle is set too large, the main probe 21 will be too long because its lowest point is lower than the device probe 10, which will increase the cost and the risk of the probe breaking. However, if the angle is too small, the force component along the surface of the wafer under test will be insufficient, causing the main probe 21 to jam or scratch the wafer under test. The above range is the optimal range after a large number of theoretical calculations and actual tests.

[0049] Furthermore, the tip of the main probe 21 is provided with a buffer cap, which can further reduce the possibility of the main probe 21 scratching the wafer under test and improve the wafer yield.

[0050] Main probe 21 Main probe 21 Main probe 21 First auxiliary probe 22 It should be noted that the probe card monitors the probe status not through a microscope, but through a connection to an external test module via cables or other means, and judges it by the continuity of the circuit.

[0051] The wafer probe card provided by this invention includes a device probe 10 and a monitoring probe cluster. The device probe 10 can be connected to a microcircuit on the surface of the wafer under test to form a test loop for testing the wafer under test. The monitoring probe cluster includes a main probe 21 and a first auxiliary probe 22. The lowermost end of the first auxiliary probe 22 is higher than the device probe 10, and the lowermost end of the main probe 21 is lower than the device probe 10. The main probe 21 is an inclined probe. After the main probe 21 contacts the wafer under test, as the wafer probe card continues to press down, the main probe 21 slides along a first direction, and the first auxiliary probe 22 is located on the sliding path of the main probe 21 along the first direction. When the main probe 21 contacts the wafer under test, and the distance between the wafer probe card and the wafer under test continues to shorten by a first distance, the main probe 21 and the first auxiliary probe 22 connect to form an alarm loop. This invention only requires installing several probes on the wafer probe card to measure the distance between the wafer probe card and the wafer under test. When the distance is too close, a new electrical signal circuit is established for subsequent alarms or signal control, preventing probe bending and ensuring the lifespan of the wafer probe card. The equipment cost is low, and only simple testing and alignment of the probes are required for debugging and maintenance, making it convenient to use. When the wafer probe card is pressed down to a certain degree, the main probe 21 and the first auxiliary probe 22 directly contact each other to form an alarm circuit. That is, the main probe 21 and the first auxiliary probe 22 can act as a circuit switch, making it easier to connect external reactor circuits, such as audible and visual alarms, or directly control the wafer probe card to stop pressing down. The circuit modification cost is low, and it has high versatility.

[0052] Of course, the wafer probe card can be pressed down or raised up on the wafer tray to reduce the distance between the probe card and the wafer tray and achieve probe pressing. The same applies to other directional movements (such as the edge extension probe 31 mentioned below, which prevents probe collision; it can be moved by the probe card or the wafer tray).

[0053] Based on Implementation Method 1, the monitoring probe cluster is further improved to obtain Implementation Method 2, the structural diagram of which is shown below. Figure 2 As shown, it includes device probe 10 and a cluster of monitoring probes;

[0054] The device probe 10 can be connected to the microcircuit on the surface of the wafer to be tested to form a test loop for testing the wafer to be tested;

[0055] The monitoring probe cluster includes a main probe 21 and a first auxiliary probe 22;

[0056] The lowest point of the first auxiliary probe 22 is higher than the device probe 10, and the lowest point of the main probe 21 is lower than the device probe 10;

[0057] The main probe 21 is an inclined probe. After the main probe 21 contacts the wafer to be tested, as the wafer probe card continues to press down, the main probe 21 slides along a first direction. The first auxiliary probe 22 is located on the sliding path of the main probe 21 along the first direction.

[0058] When the main probe 21 contacts the wafer under test, and the distance between the wafer probe card and the wafer under test continues to shorten by a first distance, the main probe 21 contacts and connects with the first auxiliary probe 22 to form an alarm circuit.

[0059] The monitoring probe cluster also includes a second auxiliary probe 23;

[0060] The second auxiliary probe 23 contacts and connects with the main probe 21 when the main probe 21 is not in contact with the wafer under test, forming a standby circuit;

[0061] When the main probe 21 contacts the wafer to be tested and begins to slide along the first direction, the contact between the second auxiliary probe 23 and the main probe 21 is broken.

[0062] The difference between this specific embodiment and the above specific embodiment is that the second auxiliary probe 23 is added to the monitoring probe cluster in this specific embodiment. The rest of the structure is the same as the above specific embodiment, and will not be described in detail here.

[0063] The second auxiliary probe 23 is a tungsten needle or a rhenium-tungsten needle. Tungsten needles or rhenium-tungsten needles are inexpensive and low-cost while ensuring a certain level of conductivity. Since the second auxiliary probe 23 does not come into contact with the wafer to be tested, a hard probe can be selected.

[0064] In this specific implementation, a second auxiliary probe 23 is added that is in contact with the main probe 21 in the non-contact state. The standby circuit formed by the second auxiliary probe 23 and the main probe 21 can indicate whether the monitoring probe cluster is normally reset when the wafer probe card is not in contact with the wafer to be tested, so as to ensure the normal operation of the wafer probe card. It can also serve as a reminder during the pressing down of the wafer probe card. When the electrical signal of the standby circuit disappears, it means that the main probe 21 has made contact with the wafer to be tested and has started to slide, providing more data support for testing.

[0065] During the gradual pressing down process of the wafer probe card, the monitoring probe cluster has three states: the first is that the main probe 21 is in contact with the second auxiliary probe 23; the second is that the main probe 21 is not in contact with either of the two auxiliary probes; and the third is that the main probe 21 is in contact with the first auxiliary probe 22, thereby indirectly determining the distance between the test probe and the wafer surface.

[0066] The following is a brief description of the wafer probe card's workflow:

[0067] (1) When the main probe 21 is not in contact with the wafer, the main probe 21 is in contact with the second auxiliary probe 23 to form a loop signal A, which feeds back "the device probe 10 is not in contact with the wafer surface";

[0068] (2) When the main probe 21 is pressed down a short distance, such as 10 to 20 micrometers, the main probe 21 will also move forward. At this time, the main probe 21 separates from the second auxiliary probe 23 and the circuit signal A is disconnected. At this time, the relationship between the device probe 10 and the wafer surface is: a few micrometers away from being pressed down to a few micrometers.

[0069] (3) When the probe card continues to press down a certain distance, the main probe 21 contacts the first auxiliary probe 22. At this time, a loop signal B is formed between the main probe 21 and the first auxiliary probe 22, which feeds back "the pressing limit has been reached" and simultaneously triggers an alarm. At this point, the device probe 10 has reached the preset pressing distance limit, for example, the limit is set to 40 micrometers ± 10 micrometers after the device probe 10 contacts the wafer surface (considering tolerance). The principle is as follows: Figure 4 As shown, Figure 4 In the diagram, Vs represents the power supply, and R represents other electrical components. When an alarm is triggered, a command can be set: the moving axis of the testing machine will immediately stop moving or return to its previous position, thus preventing further damage to the probe.

[0070] In a preferred embodiment, the projection extension direction of the main probe 21 on a plane perpendicular to the first direction is different from the projection extension directions of the other auxiliary probes. Please refer to [reference needed]. Figure 3 The projections of the main probe 21 and the first probe onto a plane perpendicular to the first direction are changed to an intersecting shape. This better ensures that the main probe 21 intersects with the first auxiliary probe 22 during its movement, improving the stability of the device. This can be seen in the preceding description of the monitoring probe cluster's workflow. Figure 3 , Figure 3 The three states from top to bottom illustrate three states in the process: the main probe 21 is in contact with the second auxiliary probe 23, the main probe 21 is not in contact with any probe, and the main probe 21 is in contact with the first auxiliary probe 22. The black dots in the figure represent the contact points between the main probe 21 and the corresponding auxiliary probe. Figure 3This is a cross-sectional view perpendicular to the first direction. Figure 3 Only the needle tip is shown in the drawing; the rest of the structure is simplified.

[0071] In addition, the monitoring probe cluster and the device probe 10 can be made of the same material or different materials.

[0072] When the main probe 21 begins to contact the wafer under test, the device probe 10 has not yet contacted the wafer under test. The main probe 21 slides on the surface of the wafer under test as it is pressed down. After sliding a certain distance, it disengages from the second auxiliary probe 23. When it contacts the first auxiliary probe 22, the device probe 10 has been pressed down to the limit of recoverable deformation (i.e., further pressing will cause significant metal fatigue, and the pressing limit distance ratio is 40±10 micrometers). At this time, an alarm is triggered. Of course, when the main probe 21 contacts the first auxiliary probe 22, neither the first auxiliary probe 22 nor the second auxiliary probe 23 has contacted the surface of the wafer under test.

[0073] Based on the second specific embodiment, the wafer probe card is further improved to obtain the third specific embodiment, the structural schematic diagram of which is shown below. Figure 5 As shown, it includes device probe 10 and a cluster of monitoring probes;

[0074] The device probe 10 can be connected to the microcircuit on the surface of the wafer to be tested to form a test loop for testing the wafer to be tested;

[0075] The monitoring probe cluster includes a main probe 21 and a first auxiliary probe 22;

[0076] The lowest point of the first auxiliary probe 22 is higher than the device probe 10, and the lowest point of the main probe 21 is lower than the device probe 10;

[0077] The main probe 21 is an inclined probe. After the main probe 21 contacts the wafer to be tested, as the wafer probe card continues to press down, the main probe 21 slides along a first direction. The first auxiliary probe 22 is located on the sliding path of the main probe 21 along the first direction.

[0078] When the main probe 21 contacts the wafer under test, and the distance between the wafer probe card and the wafer under test continues to shorten by a first distance, the main probe 21 contacts and connects with the first auxiliary probe 22 to form an alarm circuit.

[0079] The monitoring probe cluster also includes a second auxiliary probe 23;

[0080] The second auxiliary probe 23 contacts and connects with the main probe 21 when the main probe 21 is not in contact with the wafer under test, forming a standby circuit;

[0081] When the main probe 21 contacts the wafer to be tested and begins to slide along the first direction, the contact between the second auxiliary probe 23 and the main probe 21 is broken.

[0082] The wafer probe card also includes an edge control cluster;

[0083] The edge control cluster is located at the edge of the wafer probe card, and the edge control cluster includes an edge extension probe 31 and an edge auxiliary probe 32;

[0084] The edge extension probe 31 extends downwards at the edge of the projection of the wafer probe card. When the wafer probe card touches an obstacle in the horizontal direction, the edge extension probe 31 is squeezed by the obstacle and bends in the second direction. The edge auxiliary probe 32 is located on the deformation path of the edge extension probe 31 bending in the second direction.

[0085] When the edge extension probe 31 bends in the second direction to the first deformation, the edge extension probe 31 contacts and connects with the edge auxiliary probe 32 to form a contact warning circuit.

[0086] The edge control cluster can be installed on the bottom surface of the wafer probe card and extend obliquely downwards out of the edge of the wafer probe card's projection, or it can be directly installed on the side wall of the wafer probe card.

[0087] It should be noted that the "projection of the wafer probe card" mentioned above refers to the projection of the wafer probe card onto its extended plane.

[0088] The difference between this specific embodiment and the above specific embodiment is that the edge control cluster is added to the wafer probe card in this specific embodiment. The rest of the structure is the same as the above specific embodiment, and will not be described in detail here.

[0089] During wafer inspection using the wafer probe card, operational errors often occur, causing the probe to collide with protruding objects that extend beyond the wafer or chip periphery, resulting in "collision" and damage to the probe. In this specific embodiment, by adding the edge control cluster to the edge of the wafer probe card, when an obstacle is detected in the horizontal direction, the edge extension probe 31 can make contact first, and when the deformation reaches a certain extent, it forms a circuit with the edge auxiliary probe 32, promptly issuing a contact warning signal to avoid device damage caused by misoperation.

[0090] It should be noted that the first deformation variable mentioned in this invention is a measure of the deformation of the edge extension probe 31, and may include different measurement standards, such as the angle between the edge extension probe 31 and the vertical direction, or the distance the needle tip moves, or the bending arc of the probe, etc., which are not limited here and can be selected according to the actual situation.

[0091] Preferably, the edge extension probe 31 is a flexible probe. The edge extension probe 31 in this application needs to withstand a certain external force and deform in the second direction; therefore, using a flexible probe can greatly improve the service life of the edge extension probe 31. Furthermore, the edge extension probe 31 is a beryllium copper alloy probe, as beryllium copper alloy has good electrical conductivity and excellent ductility.

[0092] In addition, the edge auxiliary probe 32 is a tungsten needle or a rhenium-tungsten needle; tungsten needles or rhenium-tungsten needles are inexpensive and low-cost while ensuring a certain level of conductivity.

[0093] In a preferred embodiment, the extension direction of the projection of the edge extension probe 31 onto a plane perpendicular to the second direction is different from the extension direction of the projection of the edge auxiliary probe 32; the above method can ensure that the edge extension probe 31 intersects with the edge auxiliary probe 32, thereby improving the working stability of the edge control cluster pair.

[0094] This invention also provides a wafer inspection device, which includes any of the wafer probe cards described above. The wafer probe card provided by this invention includes a device probe 10 and a monitoring probe cluster; the device probe 10 can be connected to a microcircuit on the surface of the wafer under test to form a test loop for inspecting the wafer under test; the monitoring probe cluster includes a main probe 21 and a first auxiliary probe 22; the lowermost end of the first auxiliary probe 22 is higher than the device probe 10, and the lowermost end of the main probe 21 is lower than the device probe 10; the main probe 21 is an inclined probe, and after contacting the wafer under test, as the wafer probe card continues to press down, the main probe 21 slides along a first direction, and the first auxiliary probe 22 is located on the sliding path of the main probe 21 along the first direction; when the main probe 21 contacts the wafer under test, and the distance between the wafer probe card and the wafer under test continues to shorten by a first distance, the main probe 21 and the first auxiliary probe 22 connect to form an alarm loop. This invention only requires installing several probes on the wafer probe card to measure the distance between the wafer probe card and the wafer under test. When the distance is too close, a new electrical signal circuit is established for subsequent alarms or signal control, preventing probe bending and ensuring the lifespan of the wafer probe card. The equipment cost is low, and only simple testing and alignment of the probes are required for debugging and maintenance, making it convenient to use. When the wafer probe card is pressed down to a certain degree, the main probe 21 and the first auxiliary probe 22 directly contact each other to form an alarm circuit. That is, the main probe 21 and the first auxiliary probe 22 can act as a circuit switch, making it easier to connect external reactor circuits, such as audible and visual alarms, or directly control the wafer probe card to stop pressing down. The circuit modification cost is low, and it has high versatility.

[0095] Figure 6 The schematic diagram of the wafer inspection equipment is as follows: Figure 6 As shown, when the device probe 10 on the probe card is connected to the corresponding metal electrode plate on the wafer, the "positive and negative terminals" of the device are connected to the probe. The probe is connected to the pin headers on the PCB board of the probe card, and is connected to the test module via cables (pin headers and ribbon cables are shown in the figure), thus forming a loop. The test module can be a PCB test board (with onboard power supplies, resistors, etc.), or a system composed of a test switch board and a source meter, etc. When the device probe 10 on the probe card contacts the metal plate of the corresponding device on the wafer, a loop is formed, thereby testing the relevant performance of the device, such as resistance, capacitance, and current.

[0096] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section.

[0097] It should be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0098] The wafer probe card and wafer inspection equipment provided by this invention have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this invention. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this invention. It should be noted that those skilled in the art can make several improvements and modifications to this invention without departing from the principles of this invention, and these improvements and modifications also fall within the protection scope of the claims of this invention.

Claims

1. A wafer probe card, characterized in that, Includes device probes and monitoring probe clusters; The device probe can be connected to the microcircuit on the surface of the wafer under test to form a test loop for testing the wafer under test; The monitoring probe cluster includes a main probe and a first auxiliary probe; The lowest point of the first auxiliary probe is higher than the device probe, and the lowest point of the main probe is lower than the device probe; The main probe is an inclined probe. After the main probe contacts the wafer to be tested, as the wafer probe card continues to press down, the main probe slides along a first direction. The first auxiliary probe is located on the sliding path of the main probe along the first direction. When the main probe contacts the wafer under test, and the distance between the wafer probe card and the wafer under test continues to shorten by a first distance, the main probe contacts and connects with the first auxiliary probe to form an alarm circuit.

2. The wafer probe card as described in claim 1, characterized in that, The monitoring probe cluster also includes a second auxiliary probe; The second auxiliary probe contacts and connects with the main probe when the main probe is not in contact with the wafer under test, forming a standby circuit; When the main probe contacts the wafer to be tested and begins to slide along the first direction, the contact between the second auxiliary probe and the main probe is broken.

3. The wafer probe card as described in claim 1, characterized in that, The wafer probe card also includes an edge control cluster; The edge control cluster is located at the edge of the wafer probe card, and the edge control cluster includes edge extension probes and edge auxiliary probes; The edge extension probe extends downwards from the edge of the wafer probe card's projection. When the wafer probe card touches an obstacle in the horizontal direction, the edge extension probe is squeezed by the obstacle and bends in the second direction. The edge auxiliary probe is located on the deformation path of the edge extension probe bending in the second direction. When the edge extension probe bends in the second direction to the first deformation, the edge extension probe and the edge auxiliary probe make contact and connect to form a contact warning circuit.

4. The wafer probe card as described in claim 1, characterized in that, The main probe is a flexible probe; When the wafer probe card includes an edge control cluster, the edge extension probe is a flexible probe.

5. The wafer probe card as described in claim 4, characterized in that, The flexible probe is a beryllium copper alloy probe.

6. The wafer probe card as described in claim 1, characterized in that, The first auxiliary probe and / or the second auxiliary probe are tungsten needles or rhenium-tungsten needles; When the wafer probe card includes an edge control cluster, the edge auxiliary probe is a tungsten needle or a rhenium-tungsten needle.

7. The wafer probe card as described in claim 1, characterized in that, The angle between the main probe and the vertical direction ranges from 8 degrees to 12 degrees, including the endpoint value.

8. The wafer probe card as described in claim 1, characterized in that, The tip of the main probe is equipped with a buffer cap.

9. The wafer probe card as described in any one of claims 1 to 8, characterized in that, The projection extension direction of the main probe on the plane perpendicular to the first direction is different from the projection extension direction of the other auxiliary probes. When the wafer probe card includes an edge control cluster, the extension direction of the projection of the edge extension probe onto a plane perpendicular to the second direction is different from the extension direction of the projection of the edge auxiliary probe.

10. A wafer inspection device, characterized in that, The wafer inspection equipment includes a wafer probe card as described in any one of claims 1 to 9.

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