Substrate processing method and substrate processing equipment

Abstract

The present invention relates to a substrate processing method and apparatus, which are implemented so that when gas is supplied to a plurality of chambers through a single gas supply unit, different gases can be supplied to the plurality of chambers at the same time so as to improve the uniformity of the thickness of thin films deposited in the plurality of chambers. The substrate processing method and the substrate processing apparatus according to the present invention are advantageous in that gas is supplied to only one chamber so that processing can be performed only in the one chamber, or different gases are supplied to each chamber at the same time so that different processing can be performed in each chamber, thereby a thin film can be deposited to have a uniform thickness in each processing chamber, and the gas supply efficiency can be improved.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method and device, and more particularly to a substrate processing method and device that can supply gas to multiple processing chambers through a gas supply system and can simultaneously supply different gases, thereby improving the uniformity of the thickness of a thin film deposited in each chamber. Background Art

[0002] Generally, a thin film deposition process, a photolithography process, an etching process, etc. are performed to manufacture semiconductor devices, and each process is designed to be performed in a chamber of an optimal environment for the corresponding process. The thin film deposition process refers to a process of forming a thin film by depositing a raw material on a silicon wafer, the photolithography process refers to a process of exposing or hiding a region selected from a thin film using a photoresist material, and the etching process refers to a process of patterning a selected region in a desired manner by removing the thin film of the selected region.

[0003] As a thin film deposition apparatus for forming a predetermined thin film on a silicon wafer, various apparatuses such as a CVD (Chemical Vapor Deposition) apparatus and an ALD (Atomic Layer Deposition) apparatus are used. The thin film deposition apparatus is used in various occasions for manufacturing semiconductors.

[0004] Among these devices, the ALD device can deposit nano-thin films with excellent uniformity. Therefore, the ALD device has attracted much attention as a deposition technology required for manufacturing nano-scale semiconductor devices. Specifically, the ALD device can accurately control the film thickness in angstroms. Therefore, the ALD device has excellent step coverage, can uniformly deposit even complex 3D structures, and accurately control the thickness and composition of the film. Therefore, the ALD device can deposit a thin film over a large area at a uniform speed.

[0005] Recently, a cluster type substrate processing apparatus is used to improve productivity. The cluster type substrate processing apparatus includes a plurality of processing modules tightly coupled to each other, a transfer module for transferring a substrate, and a load lock module. In addition, a multi-chamber type substrate processing apparatus is used, which processes a plurality of substrates at the same time in order to improve the productivity of an existing ALD apparatus.

[0006] Figure 1 1 is a plan view schematically showing the structure of a conventional multi-chamber substrate processing apparatus. The conventional multi-chamber substrate processing apparatus includes a plurality of process modules 121 to 123 and a load lock module 130 which are coupled to the periphery of a transfer module 110.

[0007] The transfer module 110 includes a transfer robot 111 installed therein, and the transfer robot 111 is used to transfer the substrate S. The substrate S moves between the plurality of process modules 121 to 123 and the load lock module 130 by the transfer robot 111. The transfer module 110 always maintains a vacuum state except when setup or maintenance is required.

[0008] Each of the process modules 121 to 123 is where an actual process such as thin film deposition or etching is performed on the substrate S within one or more process chambers 121 a and 121 b , 122 a and 122 b , or 123 a and 123 b .

[0009] The load lock module 130 is used as a buffer space where the substrate S temporarily stays when the substrate S is moved into or out of the plurality of process modules 121 to 123 in a vacuum state. Generally, a structure in which two chambers are vertically stacked is often used as the load lock module 130 in consideration of productivity.

[0010] Therefore, the load-lock module 130 is switched to a vacuum state when the substrate S is transferred from the outside to the plurality of process modules 121 to 123 , and is switched to an atmospheric state when the substrate S is transferred from the plurality of process modules 121 to 123 to the outside.

[0011] Figure 2 is a side cross-sectional view schematically illustrating the configuration of a conventional multi-chamber substrate processing apparatus.

[0012] refer to Figure 2 , the multi-chamber substrate processing apparatus 200 includes a first processing chamber 210 and a second processing chamber 220. The first processing chamber 210 includes a first substrate seating unit 210a on which a first substrate S1 is seated and a first shower head 210b spraying a processing gas, and the second processing chamber 220 includes a second substrate seating unit 220a on which a second substrate S2 is seated and a second shower head 220b spraying a processing gas.

[0013] The first process gas supply line 211, through which the process gas from the gas supply unit 230 is supplied, is connected to the first process chamber 210 and is opened / closed by the first valve 212. The second process gas supply line 221, through which the process gas from the gas supply unit 230 is supplied, is connected to the second process chamber 220 and is opened / closed by the second valve 222.

[0014] For the convenience of description, Figure 2 Each of the first process gas supply line 211 and the second process gas supply line 221 is illustrated as one line, and each of the first valve 212 and the second valve 222 is also illustrated as one valve.

[0015] However, the first processing gas supply line 211 can be composed of four pipelines, namely, a source gas supply line, a source purge gas supply line, a reaction gas supply line and a reaction purge gas supply line, and the second processing gas supply line 221 can be composed of four pipelines, namely, a source gas supply line, a source purge gas supply line, a reaction gas supply line and a reaction purge gas supply line.

[0016] In addition, the first valve 212 can be composed of four valves, namely, a source gas supply pipeline valve, a source purge gas supply pipeline valve, a reaction gas supply pipeline valve and a reaction purge gas supply pipeline valve, and the second valve 222 can be composed of four valves, namely, a source gas supply pipeline valve, a source purge gas supply pipeline valve, a reaction gas supply pipeline valve and a reaction purge gas supply pipeline valve.

[0017] Since the first valve 212 and the second valve 222 are controlled to be opened / closed at the same time, a thin film is deposited in the first process chamber 210 and the second process chamber 220 under the same process conditions.

[0018] Figure 3 is a timing chart for explaining the flow of a deposition process in a conventional multi-chamber substrate processing apparatus.

[0019] like Figure 3 As shown, the opening / closing operations of the first valve and the second valve in the conventional multi-chamber substrate processing apparatus are identically controlled to deposit thin films in the first process chamber 210 and the second process chamber 220 under the same process conditions, respectively.

[0020] That is, the process gas is supplied to the first process chamber 210 and the second process chamber 220 through the first process gas supply line 211 and the second process gas supply line 221 branched from one gas supply unit 230. At this time, the same gas is simultaneously supplied to the first process chamber 210 and the second process chamber 220, so that the same type of thin film is deposited on the first substrate S1 and the second substrate S2.

[0021] However, although the opening / closing operations of the first valve and the second valve are similarly controlled, a difference may occur between the times when the first valve and the second valve are actually opened / closed or between the speeds or flows of the process gases supplied from the first process gas supply line 211 and the second process gas supply line 221 due to hardware problems.

[0022] When such a difference occurs, a deviation may occur between the thickness of the first thin film deposited on the first substrate S1 of the first process chamber 210 and the thickness of the second thin film deposited on the second substrate S2 of the second process chamber 220 . Summary of the invention

[0023] Various embodiments relate to a substrate processing method and apparatus, which can improve the uniformity of the thickness of a thin film deposited in each chamber by performing different processes in a plurality of processing chambers by simultaneously supplying different gases to the respective processing chambers while maintaining the configuration of a gas supply unit, a process gas supply line, and a process gas supply line valve in the same manner as a conventional substrate processing apparatus.

[0024] In one embodiment, a substrate processing method of a substrate processing device is provided, the substrate processing device including: a gas supply unit configured to supply a processing gas; a first gas line configured to supply the processing gas to a first chamber having a first substrate disposed therein; a second gas line configured to supply the processing gas to a second chamber having a second substrate disposed therein; a third gas line configured to supply the processing gas supplied from the gas supply unit to each of the first gas line and the second gas line; and a control unit configured to control the gas lines. The substrate processing method may include: controlling the processing gas supplied from the gas supply unit to be supplied only to any one of the first gas line and the second gas line through the third gas line, and processing the first substrate and the second substrate with the processing gas.

[0025] In one embodiment, a substrate processing method of a substrate processing device is provided, the substrate processing device comprising: a gas supply unit configured to supply a processing gas; a first gas pipeline configured to supply the processing gas to a first chamber; a first valve configured to open / close the first gas pipeline; a second gas pipeline configured to supply the processing gas to a second chamber; a second valve configured to open / close the second gas pipeline; and a third gas pipeline configured to supply the processing gas supplied from the gas supply unit to each of the first gas pipeline and the second gas pipeline. The processing gas supplied from the gas supply unit can be supplied to the first gas pipeline and the second gas pipeline through the third gas pipeline, and the supply of the processing gas can be controlled by the operation of the first valve and the second valve.

[0026] In one embodiment, a substrate processing apparatus may include: a gas supply unit configured to supply a processing gas; a first gas line configured to supply the processing gas to a first chamber having a first substrate disposed therein; a second gas line configured to supply the processing gas to a second chamber having a second substrate disposed therein; a third gas line configured to supply the processing gas supplied from the gas supply unit to each of the first gas line and the second gas line; and a control unit configured to control the first gas line, the second gas line, and the third gas line, wherein the processing gas supplied from the gas supply unit is supplied to only any one of the first gas line and the second gas line through the third gas line.

[0027] According to the embodiments of the present disclosure, the substrate processing method and apparatus can perform different processes in multiple chambers by supplying gas to gas lines for multiple chambers through a common gas supply unit and a common flow rate controller, while controlling the gas to be supplied to each chamber in sequence. Therefore, a film with uniform thickness can be deposited in each chamber, and the gas supply efficiency can be improved.

[0028] BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a plan view schematically illustrating the configuration of a conventional multi-chamber substrate processing apparatus.

[0030] Figure 2 is a side cross-sectional view schematically illustrating the configuration of a conventional multi-chamber substrate processing apparatus.

[0031] Figure 3 is a timing diagram for describing the flow of a deposition process in a conventional multi-chamber substrate processing apparatus.

[0032] Figure 4 is a side cross-sectional view schematically illustrating a configuration of a substrate processing apparatus according to an embodiment of the present disclosure.

[0033] Figure 5 is a side sectional view schematically illustrating a configuration of a substrate processing apparatus according to another embodiment of the present disclosure.

[0034] Figure 6 is a timing chart for describing the flow of a substrate processing method according to one embodiment of the present disclosure.

[0035] Figure 7 is a timing chart for describing a flow of a substrate processing method according to another embodiment of the present disclosure.

[0036] Figure 8 is a diagram for describing an example of a substrate processing method according to another embodiment of the present invention. DETAILED DESCRIPTION

[0037] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Terms used in this specification and claims should not be interpreted as limited to typical and dictionary meanings, but should be interpreted as meanings and concepts consistent with technical matters of the present disclosure.

[0038] The embodiments described in this specification and the components shown in the drawings are preferred embodiments of the present disclosure and do not represent all technical ideas of the present disclosure. Therefore, various equivalents and modifications that can replace the embodiments may exist when the present application is filed.

[0039] Figure 4is a side cross-sectional view schematically illustrating a configuration of a substrate processing apparatus according to an embodiment of the present disclosure, Figure 5 is a side sectional view schematically illustrating a configuration of a substrate processing apparatus according to another embodiment of the present disclosure.

[0040] refer to Figure 4 , a substrate processing apparatus 400 according to an embodiment of the present invention includes a gas supply unit 430, a first gas line 411, a first valve 412, a second gas line 421, a second valve 422, a third gas line 431, and a control unit 480. The gas supply unit 430 is used to supply a process gas, the first gas line 411 is used to supply the process gas to the first chamber 410, the first valve 412 is used to open / close the first gas line 411, the second gas line 421 is used to supply the process gas to the second chamber 420, the second valve 422 is used to open / close the second gas line 421, the third gas line 431 is used to supply the process gas supplied from the gas supply unit 430 to only any one of the first gas line 411 and the second gas line 421, and the control unit 480 is used to control the first gas line 411, the second gas line 421, and the third gas line 431.

[0041] The process gas supplied from the gas supply unit 430 is supplied to only any one of the first gas line 411 and the second gas line 421 through the third gas line 431, and the control unit 480 controls operations of the first valve 412 and the second valve 422 to supply the process gas to any one gas line.

[0042] The substrate processing apparatus 400 according to an embodiment of the present disclosure includes a first chamber 410 and a second chamber 420. The first chamber 410 includes a first substrate seating unit 410a on which a first substrate S1 is seated and a shower head 410b from which a process gas is sprayed, and the second chamber 420 includes a second substrate seating unit 420a on which a second substrate S2 is seated and a second shower head 420b from which a process gas is sprayed.

[0043] The first gas line 411, through which the process gas is supplied from the gas supply unit 430, is connected to the first chamber 410 and is opened / closed by the first valve 412. The second gas line 421, through which the process gas is supplied from the gas supply unit 430, is connected to the second chamber 420 and is opened / closed by the second valve 422.

[0044] The substrate processing apparatus 400 according to an embodiment of the present disclosure includes a common flow rate controller 440 configured to control the flow rate of gas supplied from the gas supply unit 430 to any one of the first gas line 411 and the second gas line 421 through the third gas line 431. The gas supplied from the gas supply unit 430 is transferred to the first chamber 410 and the second chamber 420 through the first gas line 411 and the second gas line 421, respectively, to form a first thin film on the first substrate S1 and a second thin film on the second substrate S2.

[0045] The substrate treating apparatus 400 according to the embodiment of the present disclosure may further include a gas storage space 450 installed on the third gas line 431 and configured to store the process gas supplied from the gas supply unit 430 and supply the process gas to the first gas line 411 or the second gas line 421 .

[0046] The substrate treating apparatus 400 according to the embodiment of the present disclosure may further include a third valve 432 installed on the third gas line 431 and configured to supply the process gas from the gas supply unit 430 to the first gas line 411 or the second gas line 421 or to block the supply of the process gas.

[0047] For the convenience of description, Figure 4 Each of the first gas line 411 and the second gas line 421 is illustrated as one line, and each of the first valve 412 and the second valve 422 is also illustrated as one valve.

[0048] However, the first gas pipeline 411 can be composed of four pipelines, namely, a source gas supply line, a source purge gas supply line, a reaction gas supply line and a reaction purge gas supply line, and the second gas pipeline 421 can be composed of four pipelines, namely, a source gas supply line, a source purge gas supply line, a reaction gas supply line and a reaction purge gas supply line.

[0049] The first valve 412 may be composed of four valves, namely, a source gas supply pipeline valve, a source purge gas supply pipeline valve, a reaction gas supply pipeline valve, and a reaction purge gas supply pipeline valve, and the second valve 422 may be composed of four valves, namely, a source gas supply pipeline valve, a source purge gas supply pipeline valve, a reaction gas supply pipeline valve, and a reaction purge gas supply pipeline valve.

[0050] A first discharge line 461a and a first discharge valve 461b are formed below the first chamber 410, and a second discharge line 462a and a second discharge valve 462b are formed below the second chamber 420. The first and second discharge lines 461a and 462a are connected to a common discharge pump 470.

[0051] In the substrate treating apparatus 400 according to an embodiment of the present disclosure, during the first step in which source gas, source purge gas, reaction gas, and reaction purge gas are sequentially supplied to the first chamber so that a first thin film is deposited on the first substrate S1, the process gas is not supplied to the second chamber.

[0052] Furthermore, during the second step in which the source gas, the source purge gas, the reaction gas, and the reaction purge gas are sequentially supplied to the second chamber so that the second thin film is deposited on the second substrate S2, the process gas is not supplied to the first chamber.

[0053] According to another embodiment of the present disclosure Figure 5 The substrate processing device 500 has Figure 4 The same configuration except that a first discharge line 561 a and a first discharge valve 561 b formed below the first chamber 510 are connected to a first discharge pump 571 , and a second discharge line 562 a and a second discharge valve 562 b formed below the second chamber 520 are connected to a separate second discharge pump 572 .

[0054] refer to Figure 5 , a substrate processing apparatus 500 according to another embodiment of the present disclosure includes a gas supply unit 530, a first gas line 511, a first valve 512, a second gas line 521, a second valve 522, a third gas line 531, a third valve 532, and a control unit 580. The gas supply unit 530 is used to supply a process gas, the first gas line 511 is used to supply the process gas to the first chamber 510, the first valve 512 is used to open / close the first gas line 511, the second gas line 521 is used to supply the process gas to the second chamber 520, the second valve 522 is used to open / close the second gas line 521, the third gas line 531 is used to supply the process gas supplied from the gas supply unit 530 to the first gas line 511 and the second gas line 521, the third valve 532 is used to open / close the third gas line 531, and the control unit 580 is used to control the first gas line 511, the second gas line 521, and the third gas line 531.

[0055] A substrate processing apparatus 500 according to another embodiment of the present disclosure includes a first chamber 510 and a second chamber 520. The first chamber 510 includes a first substrate seating unit 510a on which a first substrate S1 is seated and a first shower head 510b from which a process gas is sprayed, and the second chamber 520 includes a second substrate seating unit 520a on which a second substrate S2 is seated and a second shower head 520b from which a process gas is sprayed.

[0056] A substrate treating apparatus 500 according to another embodiment of the present disclosure includes a common flow rate controller 540 configured to control a flow rate of a gas supplied from a gas supply unit 530 to the first gas line 511 and the second gas line 521 through a third gas line 531 .

[0057] The substrate processing apparatus 500 according to another embodiment of the present disclosure may further include a gas storage space 550 installed on the third gas line 531 and configured to store the process gas supplied from the gas supply unit 530 and supply the process gas to the first gas line 511 or the second gas line 521. Figure 5 In the illustrated substrate processing apparatus 500, during a first step in which source gas, source purge gas, reaction gas, and reaction purge gas are sequentially supplied to a first chamber 510 so that a first thin film is deposited on a first substrate S1, reaction gas, reaction purge gas, source gas, and source purge gas are sequentially supplied to a second chamber 520 so that a second thin film is deposited on a second substrate S2.

[0058] and Figure 4 Compared with the substrate processing apparatus 400 shown in FIG. Figure 5 The substrate processing apparatus 500 shown in FIG. 1 can shorten the processing time.

[0059] Figure 6 is a timing chart for describing the flow of a substrate processing method according to an embodiment of the present disclosure.

[0060] refer to Figure 6 , the substrate processing method according to the embodiment of the present disclosure includes a first step S610 and a second step S620.

[0061] A substrate processing method according to an embodiment of the present disclosure is a substrate processing method using a substrate processing device, the substrate processing device including: a gas supply unit configured to supply a processing gas; a first gas line configured to supply the processing gas to a first chamber having a first substrate disposed therein; a second gas line configured to supply the processing gas to a second chamber having a second substrate disposed therein; a third gas line configured to supply the processing gas supplied from the gas supply unit to each of the first gas line and the second gas line; and a control unit configured to control the respective gas lines. The substrate processing method includes: controlling the processing gas supplied from the gas supply unit to be supplied only to any one of the first gas line and the second gas line through the third gas line, and processing the first substrate and the second substrate with the processing gas.

[0062] In the first step S610, the process gas is supplied to the first chamber, but not to the second chamber. The first step S610 includes forming a first thin film on a first substrate S1 by sequentially repeating the following steps: a first source process S_1 of spraying a source gas into the first chamber, a first source purge process SP_1 of spraying a source purge gas into the first chamber, a first reaction process R_1 of spraying a reaction gas into the first chamber, and a first reaction purge process RP_1 of spraying a reaction purge gas into the first chamber.

[0063] In the second step S620, the process gas is supplied to the second chamber without being supplied to the first chamber. The second step S620 includes forming a second thin film on the second substrate S2 by sequentially repeating the following steps: a second source process S_2 of spraying source gas into the second chamber, a second source purge process SP_2 of spraying source purge gas into the second chamber, a reaction process R_2 of spraying reaction gas into the second chamber, and a second reaction purge process RP_2 of spraying reaction purge gas into the second chamber.

[0064] The first step S610 and the second step S620 are sequentially performed. At this time, the first step S610 and the second step S620 are set as one cycle, and in the case of repeating the cycle, the first thin film and the second thin film are respectively formed on the first substrate S1 and the second substrate S2.

[0065] In the first step S610, the process gas is not supplied to the second chamber, and the thin film is not deposited in the second chamber. In the second step S620, the process gas is not supplied to the first chamber, and the thin film is not deposited in the first chamber.

[0066] Figure 7 is a timing chart for describing a flow of a substrate processing method according to another embodiment of the present disclosure.

[0067] refer to Figure 7 , a substrate processing method according to another embodiment of the present disclosure includes a first step S710 and a second step S720.

[0068] A substrate processing method according to another embodiment of the present disclosure is a substrate processing method using a substrate processing device, the substrate processing device including: a gas supply unit configured to supply a processing gas; a first gas line configured to supply the processing gas to a first chamber; a first valve configured to open / close the first gas line; a second gas line configured to supply the processing gas to a second chamber; a second valve configured to open / close the second gas line; and a third gas line configured to supply the processing gas supplied from the gas supply unit to each of the first gas line and the second gas line. The substrate processing method includes: supplying the processing gas supplied from the gas supply unit to the first gas line and the second gas line through the third gas line, and controlling the supply of the processing gas by the operation of the first valve and the second valve.

[0069] In the first step S710, the following operations are performed: a first source process S_1 of injecting source gas into the first chamber, a first source purge process SP_1 of injecting source purge gas into the first chamber, a first reaction process R_1 of injecting reaction gas into the second chamber, and a first reaction purge process RP_1 of injecting reaction purge gas into the second chamber.

[0070] In the second step S720, the following operations are performed: a second reaction process R_2 of injecting reaction gas into the first chamber, a second reaction purge process RP_2 of injecting reaction purge gas into the first chamber, a second source process S_2 of injecting source gas into the second chamber, and a second source purge process SP_2 of injecting source purge gas into the second chamber.

[0071] A substrate processing method according to another embodiment of the present disclosure includes depositing thin films on a first substrate S1 and a second substrate S2 , respectively, while one cycle of performing a first step S710 and then performing a second step S720 is repeated.

[0072] In the first step S710, the first source process S_1 and the first reaction process R_1 are executed simultaneously, and in the second step S720, the second reaction process R_2 and the second source process S_2 are executed simultaneously.

[0073] That is, while source gas is supplied to the first chamber to perform the first source process S_1, reaction gas is supplied to the second chamber to perform the first reaction process R_1, and while reaction gas is supplied to the first chamber to perform the second reaction process R_2, source gas is supplied to the second chamber to perform the second source process S_2.

[0074] Since thin film deposition is performed in each of the first chamber and the second chamber within one cycle, the total time of the thin film deposition process can be reduced.

[0075] Figure 8 It is used to illustrate the embodiments according to the present disclosure. Figure 6 FIG. 1 is a diagram of an example of a substrate processing method.

[0076] refer to Figure 8 , the entire processing time of the first step S610 and the entire processing time of the second step S620 are equal to each other, but the processing time constituting each of the first step S610 and the second step S620 may be different.

[0077] That is, the time for performing each of the first source process S_1, the first source purge process SP_1, the first reaction process R_1 and the first reaction purge process RP_1 of the first step S610 and the time for performing each of the second reaction process R_2, the second reaction purge process RP_2, the second source process S_2 and the second source purge process SP_2 of the second step S620 may be different.

[0078] This means that when the thickness of the first thin film formed on the first substrate S1 in the first step S610 and the thickness of the second thin film formed on the second substrate S2 in the second step S620 are different from each other, the detailed processing time of the first step S610 and the second step S620 can be adjusted to improve the uniformity of the film thickness.

[0079] Figure 8 A shows a process of normally performing the substrate processing method according to the present disclosure.

[0080] In such Figure 8 In the substrate processing method according to the present disclosure shown in A, the time for performing each of the first source process S_1, the first source purge process SP_1, the first reaction process R_1, and the first reaction purge process RP_1 of the first step S610 and the time for performing each of the second reaction process R_2, the second reaction purge process RP_2, the second source process S_2, and the second source purge process SP_2 of the second step S620 can be set to the same time, for example, 0.4 seconds. In this case, a thin film with a uniform thickness can be formed on the first substrate S1 and the second substrate S2.

[0081] The thicknesses of the first and second thin films may be different from each other due to various reasons. When the thicknesses of the first and second thin films are different from each other, the detailed processing time of the first step S610 and the second step S620 may be adjusted to control the uniformity of the film thicknesses.

[0082] like Figure 8As shown in FIG. 1B , the processing time of each process in the first step S610 can be maintained at 0.4 seconds, the processing time of the second reaction process R_2 in the second step S620 can be reduced to 0.3 seconds, and the processing time of the second source process S_2 in the second step S620 can be adjusted to 0.5 seconds, which makes it possible to adjust the uniformity of the film thickness. At this time, the processing time of the second reaction purge process RP_2 and the second source purge process SP_2 is maintained at 0.4 seconds, which is equal to the processing time of the first source purge process SP_1 and the first reaction purge process RP_1. Therefore, the time obtained by adding the processing time of the first source process S_1 and the processing time of the first reaction process R_1 is equal to the time obtained by adding the processing time of the second reaction process R_2 and the processing time of the second source process S_2.

[0083] like Figure 8 As shown in FIG. 3 , the processing time of each process in the first step S610 can be maintained at 0.4 seconds, the processing time of the second reaction purge process RR_2 in the second step S620 can be reduced to 0.3 seconds, and the processing time of the second source purge process SP_2 in the second step S610 can be adjusted to 0.5 seconds, which makes it possible to adjust the uniformity of the film thickness. At this time, the processing time of the second reaction process R_2 and the second source process S_2 is maintained at 0.4 seconds, which is equal to the processing time of the first source process S_1 and the first reaction process R_1. Therefore, the time obtained by adding the processing time of the first source purge process SP_1 and the processing time of the first reaction purge process RP_1 is equal to the time obtained by adding the processing time of the second reaction purge process RP_2 and the processing time of the second source purge process SP_2.

[0084] like Figure 8 As shown in D, the time for executing each of the first source process S_1, the first source purge process SP_1, the first reaction process R_1 and the first reaction purge process RP_1 of the first step S610 and the time for executing each of the second reaction process R_2, the second reaction purge process RP_2, the second source process S_2 and the second source purge process SP_2 of the second step S620 can all be changed to adjust the uniformity of the film thickness.

[0085] At this time, the time obtained by adding the processing time of the first source process S_1, the processing time of the first source purge process SP_1, the processing time of the first reaction process R_1, and the processing time of the first reaction purge process RP_1 is equal to the time obtained by adding the processing time of the second reaction process R_2, the processing time of the second reaction purge process RP_2, the processing time of the second source process S_2, and the processing time of the second source purge process SP_2.

[0086] That is, the substrate processing method according to the embodiment of the present disclosure can adjust the uniformity of the film thickness by changing the time of the source process and the reaction process while maintaining the time of the purge process of each chamber the same, changing the time of the purge process while maintaining the time of the source process and the reaction process the same, or changing all the times of the source process, reaction process and purge process.

[0087] As described above, the substrate processing method according to the embodiment of the present disclosure can supply gas to a processing gas supply line through a common gas supply unit and a common flow rate controller in a substrate processing device including a plurality of chambers, and supply gas to only any one chamber at the same time so that processing is performed only in one chamber, or supply different gases to each chamber so that different processing is performed in each chamber, thereby depositing a thin film with uniform thickness in each processing chamber and improving the efficiency of gas supply.

[0088] Although various embodiments have been described above, those skilled in the art will appreciate that the described embodiments are only examples. Therefore, the disclosure described herein should not be limited based on the described embodiments.

Claims

1. A substrate processing method of a substrate processing device for an atomic layer deposition process, the substrate processing device comprising: a gas supply unit configured to supply a process gas; a first gas line configured to supply the process gas to the first chamber; a first valve configured to open / close the first gas pipeline; a second gas pipeline configured to supply the process gas to the second chamber; a second valve configured to open / close the second gas pipeline; and a third gas line configured to supply the process gas supplied from the gas supply unit to each of the first gas line and the second gas line, wherein the process gas supplied from the gas supply unit is supplied to the first gas line and the second gas line through the third gas line, and the supply of the process gas is controlled by operation of the first valve and the second valve, wherein the processing gas comprises any one of a source gas and a reaction gas, The substrate processing method comprises: The first step is to supply the source gas of the process gas to the first chamber, and supply the reaction gas of the process gas to the second chamber; and The second step is to supply the reaction gas of the process gas to the first chamber, and supply the source gas of the process gas to the second chamber. 2 . The substrate processing method according to claim 1 , wherein a process of performing the first step and then performing the second step is set as one cycle, and the one cycle is repeatedly performed. 3 . The substrate processing method according to claim 1 , further comprising supplying a purge gas after the first step and the second step. 4 . The substrate processing method according to claim 1 , wherein supply times of the source gas and the reaction gas are different from each other.

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