Method for manufacturing a chip and chip

Abstract

The application discloses a chip preparation method and a chip. The chip preparation method comprises the following steps: providing a substrate and a chip assembly, wherein the chip assembly comprises a substrate and at least one chip arranged on the substrate; forming a glue layer on a surface of the substrate; inserting the chip assembly into the glue layer, so that the chip is embedded in the glue layer, and a surface of the substrate, on which the chip is arranged, is bonded to the glue layer; and peeling the chip assembly from the glue layer. Since the adhesive force of the glue layer on the substrate can make the surface of the substrate, on which the chip is arranged, tend to be flat, the problem of warping of the chip assembly is improved. Finally, the chip assembly is peeled from the glue layer. Since the chip preparation method provided by the application can improve the problem of warping of the chip assembly without damaging the structure of the chip assembly, the preparation method is simple, and the production cost of the chip is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, and in particular to a chip preparation method and chip. BACKGROUND

[0002] Due to the development of light and thin chip components, the warping of the processed chip components is more and more serious. In the related art, the warping of the chip components is prevented by slitting or grooving the surface or back surface of the chip components or by clamping the chip components by mechanical clamps. However, although the slitting or grooving can release stress, it will damage the chip components and the generated debris may remain on the chips, thereby affecting the performance of the chips. In addition, the mechanical clamps need to be added to the processing machine of the chip components, and different mechanical clamps need to be used for different sizes of chip components, which will greatly increase the production cost of the chips. SUMMARY

[0003] The chip preparation method and chip disclosed by the embodiments of the present application can improve the warping of the chip components and reduce the production cost of the chips without damaging the chip components.

[0004] To achieve the above-mentioned purpose, in a first aspect, the present application discloses a chip preparation method, which comprises the following steps:

[0005] providing a chip component, wherein the chip component comprises a substrate and at least one chip arranged on the substrate;

[0006] providing a base;

[0007] forming a glue layer on the surface of the base;

[0008] inserting the chip component into the glue layer, so that the chip is embedded in the glue layer, and the surface of the substrate on which the chip is arranged is bonded to the glue layer;

[0009] peeling the chip component from the glue layer.

[0010] As an optional embodiment, in the embodiments of the present application, after the chip component is inserted into the glue layer and before the chip component is peeled from the glue layer, the preparation method further comprises:

[0011] heating the glue layer in which the chip component is inserted.

[0012] As an optional embodiment, in the embodiments of the present application, the glue layer comprises at least one of photosensitive glue, acrylate structural glue, hot melt glue and strong glue.

[0013] As an optional implementation, in the embodiment of the present application, when the adhesive layer is a photosensitive adhesive layer, after the chip assembly is inserted into the adhesive layer and before the chip assembly is peeled off the adhesive layer, the preparation method further comprises:

[0014] irradiating the adhesive layer with a UV mercury lamp, the irradiating the adhesive layer with a UV mercury lamp being used for separating the adhesive layer from the chip assembly.

[0015] As an optional implementation, in the embodiment of the present application, after the chip assembly is inserted into the adhesive layer and before the chip assembly is peeled off the adhesive layer, or after the chip assembly is peeled off the adhesive layer, the preparation method further comprises:

[0016] removing the substrate.

[0017] As an optional implementation, in the embodiment of the present application, the adhesive layer is formed on the surface of the substrate by spin coating or pasting.

[0018] As an optional implementation, in the embodiment of the present application, the thickness of the adhesive layer is greater than the thickness of the chip.

[0019] As an optional implementation, in the embodiment of the present application, the expansion coefficient of the adhesive layer is greater than the expansion coefficients of the substrate and the chip assembly.

[0020] As an optional implementation, in the embodiment of the present application, the thickness of the substrate is greater than or equal to the thickness of the chip assembly.

[0021] In a second aspect, the present application further discloses a chip, which is prepared by the preparation method of the first aspect.

[0022] Compared with the prior art, the present application has the following beneficial effects:

[0023] The embodiment of the present application provides a preparation method of a chip and a chip. The preparation method forms an adhesive layer on the surface of a substrate, and then inserts a chip assembly into the adhesive layer, so that the chip of the chip assembly can be embedded in the adhesive layer, and the surface of the substrate provided with the chip is bonded to the adhesive layer. Since the adhesive force of the adhesive layer on the substrate can make the surface of the substrate provided with the chip tend to be flat, the problem of warping of the chip assembly is improved. In addition, since the preparation method of the chip provided by the embodiment does not need to damage the structure of the chip assembly to improve the problem of warping of the chip, and the preparation method is simple, it is beneficial to reduce the production cost of the chip. BRIEF DESCRIPTION OF DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. Obviously, the drawings described below only show some of the embodiments of the present application, and other drawings can be obtained by those of ordinary skill in the art without any creative effort based on these drawings.

[0025] Figure 1 is a flow chart of the preparation method of the chip disclosed by the embodiments of the present application;

[0026] Figure 2 is a structural schematic diagram of the chip in the preparation process disclosed by the embodiments of the present application;

[0027] Figure 3 is a structural schematic diagram of the chip disclosed by the embodiments of the present application.

[0028] Main figure mark explanation: 10, chip assembly; 11, substrate; 12, chip; 20, base; 30, glue layer. DETAILED DESCRIPTION

[0029] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings of the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without any creative effort belong to the scope of protection of the present application.

[0030] In the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0031] In addition, in addition to being used to indicate the orientation or positional relationship, the above-mentioned part of the terms can also be used to indicate other meanings, for example, the term "upper" can also be used to indicate a certain dependent relationship or connection relationship in some cases. For those of ordinary skill in the art, the specific meaning of these terms in the present application can be understood according to the specific situation.

[0032] In addition, the terms "mount", "set", "provided with", "connect", "connected" should be broadly understood. For example, it can be fixed connection, detachable connection, or integral structure; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, or internal communication between two devices, elements or components. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0033] In addition, the terms "first", "second" and the like are mainly used to distinguish different devices, elements or components (the specific type and structure may be the same or different), and are not intended to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise stated, the meaning of "multiple" is two or more.

[0034] In the related art, the production steps of the chip are generally etching a chip assembly including a chip and a substrate carrying the chip on a semiconductor material, then forming conductive materials on the positive and negative electrodes of the chip respectively, and finally removing the substrate, i.e. separating the chip from the substrate, thereby completing the production of the chip. However, due to the large difference between the expansion coefficient of the conductive material and the expansion coefficient of the semiconductor material, and the difference between the thickness of the chip assembly at the position provided with the chip and the thickness of the chip assembly at the position not provided with the chip, in the process of producing the chip, the problem of thermal mismatch between the semiconductor material and the conductive material is easily caused, thereby causing the problem of warping of the chip assembly, and further affecting the separation of the chip and the substrate and the use performance of the chip after separation. In addition, with the development of light and thin chip, i.e. the development of light and thin chip assembly, it will lead to the problem of warping of the chip assembly in the process of producing the chip.

[0035] Based on this, the present application discloses a preparation method of a chip, which can effectively solve the problem of warping of the chip assembly. The technical solutions of the present application will be further described below in combination with embodiments and drawings.

[0036] Please refer to Figure 1 and Figure 2 , the present application discloses a preparation method of a chip, which can improve the problem of warping of the chip assembly 10 and reduce the production cost of the chip 12 without damaging the chip assembly 10. Specifically, the preparation method comprises the following steps:

[0037] Step 1: providing a chip assembly. (For details, please refer to Figure 2 (A))

[0038] The chip assembly 10 comprises a substrate 11 and at least one chip 12 arranged on the substrate 11. The chip assembly 10 can be prepared by processing a provided semiconductor material to form the substrate 11 and the at least one chip 12 arranged on the substrate 11 on the semiconductor material. It can be understood that the substrate 11 and the at least one chip 12 arranged on the substrate 11 can be formed on the semiconductor material by etching or laser etching.

[0039] It is worth noting that during the process of forming the substrate 11 and the chip 12 on the semiconductor material, the positive and negative electrodes of the chip 12 are formed at the same time. Then, the conductive material is formed on the positive and negative electrodes of the chip 12, respectively, so that when the chip 12 is applied to a circuit board or an electronic device, the conductive effect can be achieved. The conductive material can be formed on the positive and negative electrodes of the chip 12 by electroplating, chemical plating or sputtering.

[0040] Optionally, the material of the semiconductor material can be silicon or sapphire, and the chip assembly 10 prepared by using silicon or semiconductor material can make the produced chip 12 play its corresponding function. In addition, the production personnel can also select the material of the semiconductor material or process the semiconductor material, so that when the produced chip 12 is applied to a circuit board or an electronic device, the chip 12 can emit blue light, red light or green light, etc. The conductive material can be gold, silver or copper, etc., which can be selected according to actual conditions, and is not limited here.

[0041] It can be understood that when the substrate 11 is provided with a plurality of chips 12, it is beneficial to improve the warping problem of the chip 12 and save materials. In other words, as many chips 12 as possible are formed on the provided semiconductor material, which can improve the utilization rate of the semiconductor material, thereby achieving the purpose of saving materials. Secondly, when a plurality of chips 12 are formed on one substrate 11, one operation of improving the warping of the chip assembly 10 can complete the purpose of improving the warping of the plurality of chips 12, which is beneficial to improve the efficiency of improving the warping of the chip 12.

[0042] The chip 12 can be a digital chip or an analog chip. When the chip 12 is a digital chip, the chip 12 can be used in the field of computer or logic control; when the chip 12 is an analog chip, the chip 12 can be used in the field of small signal amplification processing.

[0043] Step 2: Provide a substrate. (For details, please refer to Figure 2 (B) in

[0044] Specifically, the substrate 20 can be a glass block, an iron block, a copper block or the like, which can be selected according to actual conditions. In this embodiment, the substrate 20 is preferably a glass block, which is light and low in cost, thereby reducing the cost of the chip 12. In addition, the glass block is transparent, which is conducive to the transmission of light, so as to facilitate the observation of the improvement of the warping of the chip assembly 10.

[0045] Step 3: forming a glue layer on the surface of the substrate. (For details, please refer to (C) in the Figure 2

[0046] Optionally, the glue layer 30 can be formed on the surface of the substrate 20 by spin coating or pasting. The spin coating refers to a spin coating method, which is a common preparation method in organic light-emitting diodes, mainly including three steps of preparation, high-speed rotation and film formation by volatilization, that is, by controlling the time, speed and drop amount of the glue machine, as well as the concentration and viscosity of the solution, the glue layer 30 is coated on the surface of the substrate 20 and the thickness of the glue layer 30 is controlled. The pasting method is to directly paste the prepared glue layer 30 on the surface of the substrate 20.

[0047] It is worth noting that in order to ensure that the glue layer 30 can be conveniently and stably formed on the surface of the substrate 20, it is necessary to ensure that the surface of the substrate 20 used to form the glue layer 30 is a plane, so that the glue layer 30 can be more easily formed on the surface of the substrate 20, and the glue layer 30 is not easy to separate from the substrate 20.

[0048] In some embodiments, the thickness of the glue layer 30 is greater than the thickness of the chip 12, which can ensure that the chip 12 can be completely inserted into the glue layer 30, and the surface of the substrate 11 provided with the chip 12 can be bonded to the glue layer 30, thereby facilitating the improvement of the warping problem of the chip assembly 10. That is to say, if the thickness of the glue layer 30 is less than the thickness of the chip 12, it may cause the surface of the substrate 11 provided with the chip 12 to be unable to be completely bonded to the glue layer 30, so that the glue layer 30 cannot exert force on the substrate 11, thereby being not conducive to improving the warping problem of the chip assembly 10.

[0049] Optionally, the glue layer 30 comprises at least one of photosensitive glue, acrylate structural glue, hot melt glue and strong glue, for example, the glue layer 30 can be prepared from one, two or more of photosensitive glue, acrylate structural glue, hot melt glue and strong glue, such as the glue layer 30 can be prepared from photosensitive glue, or the glue layer 30 can be prepared from photosensitive glue and acrylate structural glue, or the glue layer 30 can be prepared from photosensitive glue, hot melt glue and strong glue, etc., which can be selected according to actual needs, and this embodiment is not limited.

[0050] ​It is worth noting that when the warping degree of the chip assembly 10 is different at different positions, the adhesive layer 30 can be prepared by at least two of photosensitive adhesive, acrylate structural adhesive, hot melt adhesive, and strong adhesive, etc. In this way, at the position corresponding to the adhesive layer 30 where the warping degree of the chip assembly 10 is large, the adhesive layer 30 is prepared by using the adhesive with a smaller expansion coefficient, while at the position corresponding to the adhesive layer 30 where the warping degree of the chip assembly 10 is small, the adhesive layer 30 is prepared by using the adhesive with a larger expansion coefficient, thereby facilitating the improvement effect of the adhesive layer 30 on the warping problem of the chip assembly 10.

[0051] Step 4: Inserting the chip assembly into the adhesive layer. (For details, please refer to Figure 2 (D) in the

[0052] Inserting the chip assembly 10 into the adhesive layer 30 can embed the chip 12 into the adhesive layer 30 and bond the surface of the substrate 11 provided with the chip 12 on the adhesive layer 30. Since the direction of the adhesive force of the adhesive layer 30 on the chip 12 and the surface of the substrate 11 provided with the chip 12 is opposite to the warping direction of the chip assembly 10, the adhesive force of the adhesive layer 30 on the chip 12 and the surface of the substrate 11 provided with the chip 12 can pull the surface of the substrate 11 provided with the chip 12 to a position tending to be flat, thereby improving the warping problem of the chip assembly 10. In addition, since the adhesive force of the adhesive layer 30 on the chip assembly 10 is used to improve the warping problem of the chip assembly 10, it is not necessary to open a slot or groove on the chip assembly 10 or additionally set a mechanical clamp on the processing machine of the chip assembly 10, and the step of improving the warping problem of the chip assembly 10 is simple, which can reduce the damage to the structure of the chip assembly 10 and the production cost of the chip assembly 10, i.e. it is beneficial to reduce the damage to the structure of the chip 12 and the production cost of the chip 12.

[0053] Step 5: Heating the adhesive layer with the inserted chip assembly. (For details, please refer to Figure 2 (E) in the

[0054] Since the chip assembly 10 warps in the direction away from the adhesive layer 30, i.e. the chip assembly 10 forms a concave-convex type meniscus structure after warping, and the convex side of the chip assembly 10 is inserted into the adhesive layer 30, when the chip assembly 10 is inserted into the adhesive layer 30, the middle part of the adhesive layer 30 is subjected to a greater extrusion force than the side of the adhesive layer 30. When the adhesive layer 30 with the inserted chip assembly 10 is heated, the adhesive layer 30 will expand, and the expansion degree of the middle part of the adhesive layer 30 is greater than that of the side of the adhesive layer 30, thereby making the deformation degree of the middle part of the chip assembly 10 greater than that of the side of the chip assembly 10, which is beneficial to further correct the warping problem of the chip assembly 10.

[0055] It is worth noting that in order to ensure that the heating of the glue layer 30 in which the chip assembly 10 is inserted can effectively solve the warping problem of the chip assembly 10, the expansion coefficient of the glue layer 30 needs to be greater than the expansion coefficients of the substrate 20 and the chip assembly 10, that is, the expansion coefficient of the glue layer 30 needs to be greater than the expansion coefficients of the substrate 20, the semiconductor material and the conductive material. In this way, it can be ensured that the deformation degree of the glue layer 30 after heating is greater than the deformation degrees of the substrate 20 and the chip assembly 10, and the warping problem of the chip assembly 10 can be better improved. If the deformation degree of the glue layer 30 after heating is less than the deformation degrees of the substrate 20 and the chip assembly 10, the deformation degree of the glue layer 30 may not catch up with the warping degree of the chip assembly 10, and ultimately the warping problem of the chip assembly 10 cannot be well solved.

[0056] In some embodiments, the thickness of the substrate 20 is greater than or equal to the thickness of the chip assembly 10, so that the structural strength of the substrate 20 is greater than the structural strength of the chip assembly 10, thereby being beneficial to improving the warping problem of the chip assembly 10. If the thickness of the substrate 20 is less than the thickness of the chip assembly 10, the structural strength of the substrate 20 may be less than the structural strength of the chip 12. When the glue layer 30 in which the chip assembly 10 is inserted is heated, the glue layer 30 deforms, thereby generating an acting force on the chip assembly 10 and the substrate 20. Since the structural strength of the substrate 20 is less than the structural strength of the chip 12, the acting force generated by the glue layer 30 on the substrate 20 may cause the substrate 20 to deform, and the acting force generated by the glue layer 30 on the chip assembly 10 cannot well improve the warping problem of the chip assembly 10.

[0057] Further, the thickness of the substrate 20 can generally be 0.8mm-1.2mm, for example, the thickness of the substrate 20 can be 0.8mm, 0.9mm, 1.0mm, 1.1mm or 1.2mm, etc. The thickness of the chip 12 can generally be 0.55mm-0.75mm, for example, the thickness of the chip 12 can be 0.55mm, 0.60mm, 0.65mm, 0.70mm or 0.75mm, etc. The thickness of the substrate 20 and the thickness of the chip 12 can be determined according to actual conditions, and the present embodiment is not limited in this regard.

[0058] In order to further improve the improvement effect on the warping problem of the chip assembly 10, in some embodiments, after the chip assembly 10 is inserted into the glue layer 30, and before the glue layer in which the chip assembly 10 is inserted is heated, a weight can be pressed on the surface of the substrate 11 away from the glue layer 30. In this way, the gravity of the weight can exert a pressure on the chip assembly 10 in the opposite direction of the warping direction of the chip assembly 10, thereby improving the improvement effect on the warping problem of the chip assembly 10.

[0059] It is worth noting that the weight pressing on the surface of the substrate 11 away from the adhesive layer 30 needs to be in contact with the flat surface of the substrate 11, so that the weight can press the shape of the substrate 11 to be flat, thereby improving the warping problem of the chip assembly 10.

[0060] Optionally, the aforementioned weight can be a glass block, an iron block, or a copper block, etc., which can be selected according to actual conditions, and the embodiment is not limited specifically.

[0061] Step 6: stripping the adhesive layer of the chip assembly. (For details, please refer to (F) in the Figure 2

[0062] Since the chip assembly 10 is inserted into the adhesive layer 30 and the adhesive layer 30 with the inserted chip assembly 10 is heated, the warping problem of the chip assembly 10 has been solved, that is, the chip assembly 10 at this time is a flat chip assembly 10, which can be directly applied to a circuit board or an electronic device. Therefore, the chip assembly 10 can be stripped of the adhesive layer 30 for the next operation.

[0063] As described above, the adhesive layer 30 includes at least one of photosensitive glue, acrylate structural glue, hot melt glue, and strong glue. When the adhesive layer 30 is acrylate structural glue, hot melt glue, or strong glue, the method of stripping the chip assembly 10 from the adhesive layer 30 is to manually strip the chip assembly 10 from the adhesive layer 30, and then remove the residual adhesive layer 30 on the chip assembly 10. When the adhesive layer 30 is photosensitive glue, the chip assembly 10 can be directly manually stripped from the adhesive layer 30, and then the residual adhesive layer 30 on the chip assembly 10 can be removed, or the ultraviolet mercury lamp can be used to irradiate the adhesive layer 30, so that the adhesive layer 30 loses adhesion, thereby separating the adhesive layer 30 from the chip assembly 10, that is, separating the adhesive layer 30 from the chip 12 and the substrate 11, and then the production personnel directly take away the chip assembly 10. Using photosensitive glue as the adhesive layer 30 and using ultraviolet mercury lamp to irradiate the adhesive layer 30 can quickly separate the adhesive layer 30 from the chip assembly 10, which is conducive to improving the production efficiency of the chip 12.

[0064] Step 7: removing the substrate. (For details, please refer to (G) in the Figure 2

[0065] ​​When the chip 12 is applied to a circuit board or an electronic device, the substrate 11 needs to be removed to prevent the substrate 11 from affecting the use performance of the chip 12. The following will be illustrated by taking the chip 12 applied to a circuit board as an example. When the chip 12 can be welded on the circuit board in batches, the chip 12 can be welded on the circuit board and then the substrate 11 is removed, that is, the substrate 11 is removed after the chip assembly 10 is peeled off the adhesive layer 30, so as to obtain individual chips 12. When the chip 12 needs to be welded on the circuit board individually, the substrate 11 can be removed after the adhesive layer 30 of the chip assembly 10 is heated and before the chip assembly 10 is peeled off the adhesive layer 30, or the substrate 11 can be removed after the chip assembly 10 is peeled off the adhesive layer 30, so as to obtain individual chips, and then the individual chips are welded on the circuit board. The specific time when the substrate is removed can be determined according to the actual situation. It is worth noting that the method for removing the substrate 11 can be that the chip 12 is cut from the substrate 11 by using a tool, or other methods that can separate the chip 12 from the substrate 11, which are not limited in the embodiment.

[0066] Please refer to Figure 3 The application further discloses a chip, which is prepared by the preparation method.

[0067] Optionally, the chip 12 can be a digital chip or an analog chip. When the chip 12 is a digital chip, the chip 12 can be used in the field of computer or logic control. When the chip 12 is an analog chip, the chip 12 can be used in the field of small signal amplification processing.

[0068] The preparation method of the chip and the chip disclosed in the above embodiment are described in detail. The principle and implementation mode of the application are described by using specific examples. The above embodiment is only used to help understand the preparation method of the chip and the chip and the core idea thereof. Meanwhile, for those skilled in the art, the specific implementation mode and application range can be changed according to the idea of the application. In conclusion, the content of the specification should not be understood as a limitation of the application.

Claims

1. A method for preparing a chip, characterized in that: The preparation method comprises the following steps: Providing a chip assembly, the chip assembly comprising a substrate and at least one chip disposed on the substrate; providing a substrate; forming a glue layer on the surface of the substrate; Inserting the chip assembly into the adhesive layer so that the chip is embedded in the adhesive layer and the surface of the substrate on which the chip is provided is adhered to the adhesive layer; the adhesive layer is configured to generate an adhesive force opposite to the warping direction of the chip assembly; The chip assembly is peeled off the adhesive layer.

2. The method for preparing a chip according to claim 1, wherein: After inserting the chip assembly into the adhesive layer and before peeling the chip assembly off the adhesive layer, the preparation method further includes: The adhesive layer with the chip component inserted therein is heated.

3. The method for preparing a chip according to claim 1, wherein: The adhesive layer includes at least one of photosensitive adhesive, acrylic structural adhesive, hot melt adhesive and super adhesive.

4. The method for preparing a chip according to claim 3, wherein: When the adhesive layer is a photosensitive adhesive layer, after inserting the chip assembly into the adhesive layer and before peeling the chip assembly off the adhesive layer, the preparation method further includes: The adhesive layer is irradiated with an ultraviolet mercury lamp, and the irradiation of the adhesive layer with the ultraviolet mercury lamp is used to separate the adhesive layer from the chip component.

5. The method for preparing a chip according to claim 1, wherein: After inserting the chip assembly into the adhesive layer and before peeling the chip assembly from the adhesive layer, or after peeling the chip assembly from the adhesive layer, the preparation method further includes: The substrate is removed.

6. The method for preparing a chip according to any one of claims 1 to 5, characterized in that: The adhesive layer is formed on the surface of the substrate by spin coating or attachment.

7. The method for preparing a chip according to any one of claims 1 to 5, characterized in that: The thickness of the adhesive layer is greater than the thickness of the chip.

8. The method for preparing a chip according to any one of claims 1 to 5, characterized in that: The expansion coefficient of the adhesive layer is greater than the expansion coefficients of the substrate and the chip assembly.

9. The method for preparing a chip according to any one of claims 1 to 5, characterized in that: The thickness of the substrate is greater than or equal to the thickness of the chip component.

10. A chip, characterized in that: The chip is prepared by the preparation method according to any one of claims 1 to 9.

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