Phase shifter and preparation method thereof, and antenna

Abstract

This invention discloses a phase shifter, its fabrication method, and an antenna. The phase shifter includes at least one phase-shifting unit, which comprises a microstrip line, a photodielectric layer, a ground electrode, and at least one light-guiding structure. The microstrip line is located on one side of the photodielectric layer, and the ground electrode is located on the side of the photodielectric layer away from the microstrip line. The light-guiding structure at least partially overlaps with the photodielectric layer and guides light into the photodielectric layer. The phase shifter provided by this invention, by setting a photodielectric layer between the microstrip line and the ground electrode and by setting at least one light-guiding structure to guide light into the photodielectric layer, controls the change in the dielectric constant of the photodielectric layer through light, thereby achieving phase shifting of the radio frequency signal transmitted on the microstrip line. The phase shifter provided by this invention uses a relatively inexpensive photodielectric layer instead of expensive traditional phase shifters and other antenna components, achieving radio frequency signal phase shifting while reducing manufacturing costs.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of communication technology, and in particular to a phase shifter and a preparation method thereof, and an antenna. Background Art

[0002] The phased array antenna is an important radio device for transmitting and receiving electromagnetic waves. The phased array antenna controls the feeding phase of the radiating unit in the array antenna through a phase shifter to change the antenna radiation direction to achieve the purpose of beam scanning.

[0003] The phase shifters of existing phased array antennas use separate transceiver chips (T / R components) to achieve the beam scanning function. However, the price of transceiver chips is relatively expensive, which makes the phase shifters of existing phased array antennas extremely expensive, making it difficult to achieve large-scale commercialization, limiting the promotion of phased array antennas to the consumer electronics field. Summary of the invention

[0004] The present invention provides a phase shifter and a preparation method thereof, and an antenna, so as to reduce costs and provide more possibilities for large-scale commercialization.

[0005] In a first aspect, an embodiment of the present invention provides a phase shifter, including:

[0006] at least one phase shift unit, the phase shift unit comprising a microstrip line, a photodielectric layer, a ground electrode and at least one light guiding structure;

[0007] The microstrip line is located at one side of the photodielectric layer, and the ground electrode is located at a side of the photodielectric layer away from the microstrip line;

[0008] The light-guiding structure at least partially overlaps with the photodielectric layer, and the light-guiding structure is used for guiding light into the photodielectric layer.

[0009] In a second aspect, an embodiment of the present invention further provides an antenna, comprising the phase shifter described in the first aspect.

[0010] In a third aspect, an embodiment of the present invention further provides a method for preparing a phase shifter, the method comprising:

[0011] providing a photodielectric layer;

[0012] A microstrip line is prepared on one side of the photodielectric layer, a ground electrode is prepared on the side of the photodielectric layer away from the microstrip line, and at least one light-guiding structure is prepared to form at least one phase-shifting unit, wherein the light-guiding structure at least partially overlaps with the photodielectric layer.

[0013] The phase shifter provided in the embodiment of the present invention is provided with a photodielectric layer between the microstrip line and the ground electrode, and at least one light-guiding structure is provided to guide light into the photodielectric layer, so as to control the change of the dielectric constant of the photodielectric layer through the light, thereby achieving the phase shifting of the radio frequency signal transmitted on the microstrip line. Compared with the phase shifter in the prior art, the phase shifter provided in the embodiment of the present invention uses a relatively low-priced photodielectric layer to replace the expensive phase shifter chip, thereby achieving the phase shifting of the radio frequency signal, reducing the manufacturing cost, and providing more possibilities for large-scale commercialization. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 A schematic diagram of the structure of a phase shifter provided by an embodiment of the present invention;

[0015] Figure 2 A schematic structural diagram of a phase shifting unit provided in an embodiment of the present invention;

[0016] Figure 3 for Figure 2 Schematic diagram of the cross-sectional structure along the A-A' direction;

[0017] Figure 4 A schematic diagram of a partial cross-sectional structure of a phase shifter provided in an embodiment of the present invention;

[0018] Figure 5 A schematic diagram of the structure of another phase shifter provided by an embodiment of the present invention;

[0019] Figure 6 for Figure 5 Schematic diagram of the cross-sectional structure along the B-B' direction;

[0020] Figure 7 A schematic diagram of a partial cross-sectional structure of another phase shifter provided by an embodiment of the present invention;

[0021] Figure 8 A schematic diagram of a partial cross-sectional structure of another phase shifter provided in an embodiment of the present invention;

[0022] Fig. 9 for Figure 8 A schematic diagram of the enlarged structure at F;

[0023] Fig.10 A schematic structural diagram of another phase shifter provided in an embodiment of the present invention;

[0024] Fig.11 for Fig.10 Schematic diagram of the cross-sectional structure along the C-C' direction;

[0025] Fig.12 for Fig.11 A schematic diagram of the enlarged structure at D;

[0026] Fig.13 for Fig.10 Schematic diagram of the cross-sectional structure along the E-E' direction;

[0027] Fig.14 A schematic diagram of a partial cross-sectional structure of another phase shifter provided in an embodiment of the present invention;

[0028] Fig.15 for Fig.14 Schematic diagram of the enlarged structure at N;

[0029] Fig.16 A schematic diagram of a partial cross-sectional structure of another phase shifter provided in an embodiment of the present invention;

[0030] Fig.17 for Fig.16 Schematic diagram of the enlarged structure at G;

[0031] Fig.18 A schematic diagram of a partial cross-sectional structure of another phase shifter provided in an embodiment of the present invention;

[0032] Fig.19 for Fig.18 A schematic diagram of the enlarged structure at I;

[0033] Fig. 20 A schematic diagram of a partial cross-sectional structure of another phase shifter provided in an embodiment of the present invention;

[0034] Fig.21 A schematic structural diagram of another phase shifter provided in an embodiment of the present invention;

[0035] Fig. 22 for Fig.21 Schematic diagram of the cross-sectional structure along the J-J' direction;

[0036] Fig.23 A schematic structural diagram of another phase shifter provided in an embodiment of the present invention;

[0037] Fig.24 A schematic structural diagram of another phase shifter provided in an embodiment of the present invention;

[0038] Fig.25 A schematic diagram of a partial cross-sectional structure of another phase shifter provided in an embodiment of the present invention;

[0039] Fig.26 A schematic diagram of a partial cross-sectional structure of another phase shifter provided by an embodiment of the present invention;

[0040] Fig. 27 A schematic diagram of a partial cross-sectional structure of another phase shifter provided in an embodiment of the present invention;

[0041] Fig.28 A schematic structural diagram of another phase shifter provided in an embodiment of the present invention;

[0042] Fig.29 A schematic structural diagram of another phase shifter provided in an embodiment of the present invention;

[0043] Fig.30 for Fig.29 Schematic diagram of the cross-sectional structure along the K-K' direction;

[0044] Fig.31 A schematic diagram of a partial cross-sectional structure of another phase shifter provided in an embodiment of the present invention;

[0045] Fig.32 A schematic structural diagram of another phase shifter provided in an embodiment of the present invention;

[0046] Fig.33 for Fig.32 Schematic diagram of the cross-sectional structure along the L-L' direction;

[0047] Fig.34 A schematic diagram of the structure of an antenna provided by an embodiment of the present invention;

[0048] Fig.35 for Fig.34 Schematic diagram of the cross-sectional structure along the M-M' direction;

[0049] Fig.36 A schematic diagram of a partial cross-sectional structure of an antenna provided in an embodiment of the present invention;

[0050] Fig.37 A schematic diagram of a partial cross-sectional structure of another antenna provided in an embodiment of the present invention;

[0051] Fig.38 A schematic diagram of a partial cross-sectional structure of another antenna provided in an embodiment of the present invention;

[0052] Fig.39 A schematic flow chart of a method for preparing a phase shifter provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0053] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0054] Figure 1 A schematic diagram of the structure of a phase shifter provided in an embodiment of the present invention is shown in FIG. Figure 2 A schematic diagram of the structure of a phase shift unit provided in an embodiment of the present invention, Figure 3 for Figure 2 The schematic diagram of the cross-sectional structure along the A-A' direction is as follows: Figure 1-3 As shown, the phase shifter provided in the embodiment of the present invention includes at least one phase shift unit 10, and the phase shift unit 10 includes a microstrip line 101, a photodielectric layer 102, a ground electrode 103 and at least one light guide structure 104. The microstrip line 101 is located on one side of the photodielectric layer 102, and the ground electrode 103 is located on a side of the photodielectric layer 102 away from the microstrip line 101. The light guide structure 104 at least partially overlaps with the photodielectric layer 102, and the light guide structure 104 is used to guide light into the photodielectric layer 102.

[0055] Specifically, Figure 1-3 As shown, the phase shifter includes at least one phase shift unit 10, and the phase shift unit 10 includes a photodielectric layer 102. The dielectric constant of the photodielectric layer 102 changes according to different light. Introducing light into the photodielectric layer 102 can cause the structure and morphology of the material molecules in the photodielectric layer 102 to change, so as to modulate the anisotropy of the physical properties of the material, thereby changing the dielectric constant of the photodielectric layer 102. The light parameters that affect the material properties include light intensity and light wavelength, for example, the dielectric constant of the photodielectric layer 102 can be controlled by controlling the light intensity; the dielectric constant of the photodielectric layer 102 can also be controlled by controlling the wavelength of the light. This embodiment is not limited to this, as long as the dielectric constant of the photodielectric layer 102 can be changed. For example, when the dielectric constant of the photodielectric layer 102 is controlled by controlling the light wavelength, the wavelength range of the light controlling the photodielectric layer can be 390nm~577nm. The wavelength range of green light may be 492nm to 577nm, and the wavelength range of blue-violet light may be 390nm to 492nm, that is, green light or blue-violet light may be used to control the dielectric constant of the photodielectric layer 102. The embodiment of the present invention does not limit the material of the photodielectric layer 102, and those skilled in the art may select it according to the actual situation, as long as the photodielectric layer 102 can be used to phase shift the radio frequency signal transmitted on the microstrip line 101 and change the phase of the radio frequency signal. Exemplarily, the material of the photodielectric layer 102 may include liquid crystal polymer, azo dye or azo polymer, etc.

[0056] It should be noted that the material of the photodielectric layer 102 can be a solid material. Compared with liquid materials, the solid property of the photodielectric layer 102 can improve the thickness uniformity to a certain extent, reduce the thickness variation caused by external pressure, and further reduce the influence of the thickness variation on the phase shifting performance of the phase shifter, which helps to improve the accuracy of the phase shift.

[0057] Continue to refer Figure 1-3The phase shift unit 10 further includes a microstrip line 101 and a ground electrode 103. In this embodiment, the microstrip line 101 is located on one side of the photodielectric layer 102, and the ground electrode 103 is located on the side of the photodielectric layer 102 away from the microstrip line 101. The microstrip line 101 is used to transmit radio frequency signals, and the radio frequency signals are transmitted between the microstrip line 101 and the ground electrode 103. Specifically, Figure 1-3 As shown, the photodielectric layer 102 overlaps with the microstrip line 101, and the microstrip line 101 and the ground electrode 103 are respectively located on opposite sides of the photodielectric layer 102. The radio frequency signal is transmitted in the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103. Due to the change of the dielectric constant of the photodielectric layer 102 (the dielectric constant of the photodielectric layer 102 changes after being affected by the light intensity or wavelength of the light), the radio frequency signal transmitted on the microstrip line 101 will be phase shifted, thereby changing the phase of the radio frequency signal, thereby realizing the phase shift function of the radio frequency signal.

[0058] It can be understood that the photodielectric layer 102 overlaps with the microstrip line 101, which may be that the photodielectric layer 102 partially overlaps with the microstrip line 101; or the photodielectric layer 102 and the microstrip line 101 overlap; or the microstrip line 101 is located in the vertical projection of the photodielectric layer 102 on the plane where the microstrip line 101 is located. It can also be understood that the photodielectric layer 102 overlaps with the microstrip line 101, which may be that the photodielectric layer 102 overlaps with the microstrip line 101 along the thickness direction of the photodielectric layer 102. Optionally, when the microstrip line 101 is located in a plane, the photodielectric layer 102 overlaps with the microstrip line 101, which may be that the vertical projection of the photodielectric layer 102 on the plane where the microstrip line 101 is located overlaps with the microstrip line 101.

[0059] Continue to refer Figure 1-3 The phase shift unit 10 further includes at least one light-guiding structure 104, which at least partially overlaps with the photo-induced dielectric layer 102. The light-guiding structure 104 is used to transmit light to the photo-induced dielectric layer 102 to change the dielectric constant of the photo-induced dielectric layer 102, thereby realizing phase shift control of the radio frequency signal transmitted on the microstrip line 101. It can be understood that the light-guiding structure 104 and the photo-induced dielectric layer 102 can partially overlap, or the vertical projection of the light-guiding structure 104 in the plane where the photo-induced dielectric layer 102 is located is located in the photo-induced dielectric layer 102. Further, the photo-induced dielectric layer 102 and the light-guiding structure 104 can overlap along the thickness direction of the photo-induced dielectric layer 102. Those skilled in the art can set the position of the light-guiding structure 104 according to actual needs, as long as the light can be transmitted to the photo-induced dielectric layer 102.

[0060] It should be noted that the phase shifter may include a phase shift unit 10, and each phase shift unit 10 includes a microstrip line 101. The phase shift unit 10 is used to achieve the function of shifting the RF signal transmitted on the microstrip line 101. In other embodiments, the phase shifter may also include a plurality of phase shift units 10 distributed in an array to simultaneously shift the phase of the RF signals transmitted on the plurality of microstrip lines 101. Figure 1 Taking the example that the phase shifter includes four phase shifting units 10, in other embodiments, those skilled in the art may set the number and layout of the phase shifting units 10 according to actual needs, which is not limited in the embodiment of the present invention.

[0061] The phase shifter provided in the embodiment of the present invention is provided with a photodielectric layer 102 between the microstrip line 101 and the ground electrode 103, and at least one light-guiding structure 104 is provided to guide light into the photodielectric layer 102, so as to control the change of the dielectric constant of the photodielectric layer 102 by light, thereby realizing the phase shift of the radio frequency signal transmitted on the microstrip line 101. Compared with the phase shifter in the prior art, the phase shifter provided in the embodiment of the present invention realizes the phase shift of the radio frequency signal by using the relatively low-priced photodielectric layer 102 to replace the expensive phase shifter chip, and has a simple structure and low cost, which reduces the manufacturing cost and provides more possibilities for large-scale commercialization. Furthermore, in order to ensure the phase shifting performance of the phase shifter, the thickness of the phase shifter needs to be as uniform as possible. Compared with using liquid material as the dielectric layer with a variable dielectric constant, the use of a photodielectric layer can ensure the uniform thickness of the phase shifter, which helps to improve the accuracy of the phase shift. Furthermore, the phase shifter provided by the present invention only needs to use light to control the change of the dielectric constant of the photoinduced dielectric layer. Compared with the use of electrical control to control the dielectric constant of the dielectric layer, there is no need to additionally produce electrodes or wiring to provide potential, which simplifies the process and preparation technology and helps to control costs.

[0062] Continue to refer Figure 1-3 Optionally, the light guide structure 104 is located on a side of the microstrip line 101 away from the ground electrode 103 , and / or the light guide structure 104 is located on a side of the microstrip line 101 close to the ground electrode 103 .

[0063] Among them, the light-guiding structure 104 can be located on the side of the microstrip line 101 away from the ground electrode 103, or, the light-guiding structure 104 can be located on the side of the microstrip line 101 close to the ground electrode 103, or, the light-guiding structure 104 is provided on both the side of the microstrip line 101 away from the ground electrode 103 and the side of the microstrip line 101 close to the ground electrode 103, so as to guide the light into the photodielectric layer 102, thereby controlling the change of the dielectric constant of the photodielectric layer 102 through the light, and further realizing the control of the phase shift of the radio frequency signal transmitted on the microstrip line 101, and the embodiment of the present invention is not limited to this.

[0064] Specifically, Figure 3 As shown, taking the light-guiding structure 104 located on the side of the microstrip line 101 close to the ground electrode 103 as an example, the light-guiding structure 104 can be arranged on the side of the photodielectric layer 102 close to the microstrip line 101. For example, the light-guiding structure 104 is an optical fiber or a light-guiding plate arranged on the side of the photodielectric layer 102 close to the microstrip line 101, or the light-guiding structure 104 can also be a groove arranged on the side of the photodielectric layer 102 close to the microstrip line 101, and the surface of the groove is covered with an opaque material to confine the light in the light-guiding structure 104, thereby avoiding light leakage and large loss during the transmission process of the light-guiding structure 104.

[0065] Figure 4 A partial cross-sectional structural diagram of a phase shifter provided in an embodiment of the present invention is shown in FIG. Figure 4 As shown, illustratively, the light-guiding structure 104 is disposed on a side of the photodielectric layer 102 away from the microstrip line 101. For example, the light-guiding structure 104 is an optical fiber or a light-guiding plate disposed on a side of the photodielectric layer 102 away from the microstrip line 101. Alternatively, the light-guiding structure 104 may be a groove disposed on a side of the photodielectric layer 102 away from the microstrip line 101, and the surface of the groove is covered with an opaque material to confine the light in the light-guiding structure 104, thereby avoiding light leakage and large loss during the transmission of the light-guiding structure 104.

[0066] By arranging the light guiding structure 104 on the side of the photodielectric layer 102 close to the microstrip line 101 or arranging the light guiding structure 104 on the side of the photodielectric layer 102 far from the microstrip line 101 , the thickness of the phase shifter can be reduced, thereby facilitating the realization of a miniaturized phase shifter.

[0067] In other embodiments, the light-guiding structure 104 may also be disposed on a side of the ground electrode 103 away from the microstrip line 101, or the light-guiding structure 104 is located on a side of the microstrip line 101 away from the ground electrode 103, thereby reducing the effect of the light-guiding structure 104 on the thickness of the photodielectric layer 102 and improving the phase shift accuracy of the photodielectric layer 102. Those skilled in the art may make arrangements according to actual needs.

[0068] Figure 5 A schematic diagram of the structure of another phase shifter provided in an embodiment of the present invention, Figure 6 for Figure 5 The schematic diagram of the cross-sectional structure along the B-B' direction is as follows: Figure 5 and Figure 6 As shown, optionally, the light guide structure 104 includes a light output opening 1041 , and a vertical projection of the light output opening 1041 on the plane where the microstrip line 101 is located does not overlap with the microstrip line 101 .

[0069] For example, Figure 6As shown, taking the light-guiding structure 104 located on the side of the microstrip line 101 away from the ground electrode 103 as an example, the light-guiding structure 104 can be additionally provided. Specifically, when preparing the phase shifter, the light-guiding structure 104 can be independently prepared, and then the light-guiding structure 104 can be directly attached to the side of the microstrip line 101 away from the ground electrode 103, thereby modularizing the preparation process of the phase shifter. If there is a defect in the light-guiding structure 104, only the light-guiding structure 104 can be replaced without discarding the entire phase shifter, which helps to reduce production costs.

[0070] Continue to refer Figure 5 and Figure 6 The light guide structure 104 includes a light output opening 1041, and the light can be output only from the light output opening 1041, thereby avoiding light leakage and large loss during the transmission of the light guide structure 104. Figure 6 As shown, the light-guiding structure 104 is configured as a closed structure covered by an opaque material 1042. When light is transmitted in the light-guiding structure 104, the opaque material 1042 will confine the light in the closed structure, thereby preventing light from leaking and causing a large amount of loss during the transmission of the light-guiding structure 104. The opaque material 1042 is removed at the light output opening 1041 of the light-guiding structure 104, thereby achieving light output from the light output opening 1041.

[0071] It should be noted that the opaque material 1042 can be an opaque material, but is not limited to opaque materials. It can also be a material that can only block the light that the photodielectric layer 102 can respond to. The so-called light that the photodielectric layer 102 can respond to can be when the light is irradiated to the photodielectric layer 102, the dielectric constant of the photodielectric layer 102 will change. For example, the light that the photodielectric layer 102 can respond to is blue light, and the opaque material 1042 can block the blue light.

[0072] In addition, the vertical projection of the light output opening 1041 on the plane where the microstrip line 101 is located does not overlap with the microstrip line 101. It can be understood that the vertical projection of the light output opening 1041 on the plane where the microstrip line 101 is located does not overlap with the microstrip line 101, which means that along the thickness direction of the microstrip line 101, there is no overlapping area between the light output opening 1041 and the microstrip line 101, thereby avoiding the light output from the light output opening 1041 from being blocked by the microstrip line 101, ensuring that the light can be introduced into the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103, so as to change the dielectric constant of the photodielectric layer 102, thereby controlling the phase shift of the radio frequency signal transmitted on the microstrip line 101.

[0073] For example, Figure 6As shown, the phase shifter provided by the embodiment of the present invention includes a microstrip line setting area 21 and a non-microstrip line setting area 22. Along the thickness direction of the microstrip line 101, the microstrip line 101 overlaps with the microstrip line setting area 21, that is, along the thickness direction of the microstrip line 101, the area edge of the microstrip line setting area 21 overlaps with the edge of the microstrip line 101, and the non-microstrip line setting area 22 covers the light output opening 1041, thereby preventing the light output at the light output opening 1041 from being blocked by the microstrip line 101.

[0074] Continue to refer Figure 5 Optionally, along a direction parallel to the plane where the photodielectric layer 102 is located, the light output opening 1041 includes a first boundary 10411, the first boundary 10411 is the boundary of the light output opening 1041 on the side close to the microstrip line 101, the microstrip line 101 includes a second boundary 1011, the second boundary 1011 is the boundary of the microstrip line 101 on the side close to the light output opening 1041, and the shortest distance between the first boundary 10411 and the second boundary 1011 is D1, wherein 0<D1≤2mm.

[0075] Among them, Figure 5 As shown, if the shortest distance D1 between the first boundary 10411 and the second boundary 1011 is too large, the distance between the light output opening 1041 and the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103 will be far away, and the light output at the light output opening 1041 will be greatly attenuated in the process of propagating to the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103, thereby reducing the light utilization rate. In the embodiment of the present invention, by setting the shortest distance D1 between the first boundary 10411 of the light output opening 1041 and the second boundary 1011 of the microstrip line 101 to satisfy 0<D1≤2mm, the light output opening 1041 is closer to the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103, which helps to improve the light utilization rate.

[0076] Figure 7 A schematic diagram of a partial cross-sectional structure of another phase shifter provided in an embodiment of the present invention. Optionally, the phase shifter provided in an embodiment of the present invention further includes a first substrate 31, which is located on a side of the microstrip line 101 away from the ground electrode 103, and the light guide structure 104 is located on the first substrate 31.

[0077] Among them, Figure 7 As shown, by arranging the first substrate 31 on the side of the microstrip line 101 away from the ground electrode 103, the first substrate 31 can support and protect the phase shifter, thereby improving the robustness of the phase shifter. In addition, when preparing the light guide structure 104, the first substrate 31 can be used as a carrier, and the light guide structure 104, the microstrip line 101, and the photodielectric layer 102 can be prepared on the first substrate 31 to reduce the difficulty of preparing the phase shifter.

[0078] Further, Figure 8 A partial cross-sectional structural diagram of another phase shifter provided in an embodiment of the present invention, Fig. 9 for Figure 8 The enlarged structural diagram at F is as follows: Figure 8 and Fig. 9 As shown, optionally, the light guide structure 104 includes a groove 1043 , and the groove 1043 may be located on a side of the first substrate 31 away from the ground electrode 103 .

[0079] The light guide structure 104 is formed by providing the groove 1043 on the side of the first substrate 31 away from the ground electrode 103 . Compared with providing an additional light guide structure 104 , this helps to reduce the thickness of the phase shifter to achieve a miniaturized phase shifter.

[0080] Further, continue to refer to Figure 8 and Fig. 9 The light-guiding structure 104 may further include an opaque material 1042 covering the groove 1043. When light is transmitted in the light-guiding structure 104, the opaque material 1042 will confine the light in the groove 1043, thereby preventing light from leaking and causing a large amount of loss during the transmission of the light-guiding structure 104. The opaque material 1042 is removed at the light output opening 1041 of the light-guiding structure 104, thereby achieving light output from the light output opening 1041.

[0081] Among them, the opaque material 1042 can be an opaque material, such as organic photoresist, metal, opaque resin, graphite or other reflective layers, but is not limited to opaque materials. The opaque material 1042 can also be a material that can only block the light to which the photodielectric layer 102 can respond. The so-called light to which the photodielectric layer 102 can respond can be when the light is irradiated to the photodielectric layer 102, the dielectric constant of the photodielectric layer 102 will change. For example, the light to which the photodielectric layer 102 can respond is blue light, and the opaque material 1042 can block the blue light.

[0082] It should also be noted that the light guide structure 104 may also be located on a side of the first substrate 31 close to the ground electrode 103 . The embodiments of the present invention are only for illustration and are not intended to limit the present invention.

[0083] Fig.10 A schematic diagram of the structure of another phase shifter provided in an embodiment of the present invention, Fig.11 for Fig.10 Schematic diagram of the cross-sectional structure along the C-C' direction, Fig.12 for Fig.11 Schematic diagram of the enlarged structure at D, Fig.13 for Fig.10The schematic diagram of the cross-sectional structure along the E-E' direction is as follows: Figure 10-13 As shown, optionally, the light guide structure 104 includes a light output opening 1041. The phase shifter provided in the embodiment of the present invention also includes a first substrate 31, the first substrate 31 is located on the side of the microstrip line 101 away from the ground electrode 103, the first substrate 31 includes a first sub-substrate 311 and a second sub-substrate 312, the second sub-substrate 312 is located on the side of the first sub-substrate 311 away from the ground electrode 103, the light guide structure 104 includes a groove 1043 and a metal reflective layer 1044, the groove 1043 is located on the side of the first sub-substrate 311 away from the ground electrode 103, and / or, the groove 1043 is located on the side of the second sub-substrate 312 close to the ground electrode 103, the metal reflective layer 1044 covers the surface of the groove 1043, and the light output opening 1041 is arranged on the metal reflective layer 1044 on the side of the groove 1043 close to the photodielectric layer 102.

[0084] Among them, Figure 10-13 As shown, the first substrate 31 is located on the side of the microstrip line 101 away from the ground electrode 103. By arranging the light-guiding structure 104 in the first substrate 31, the light-guiding structure 104 is located on the side of the microstrip line 101 away from the ground electrode 103, thereby avoiding the light-guiding structure 104 from affecting the thickness of the photo-induced dielectric layer 102, and improving the phase shift accuracy of the photo-induced dielectric layer 102. In addition, compared with arranging the light-guiding structure 104 in the photo-induced dielectric layer 102, arranging the light-guiding structure 104 in the first substrate 31, a layer of substrate is provided between the light-guiding structure 104 and the microstrip line 101, which can reduce the influence of the metal reflective layer 1044 in the light-guiding structure 104 on the microstrip line 101, and achieve good control of the microstrip line 101 on the radio frequency signal. In addition, if the light-guiding structure 104 is disposed on a side of the ground electrode 103 away from the microstrip line 101, a hollow structure needs to be disposed on the ground electrode 103 to prevent the ground electrode 103 from blocking the light introduced by the light-guiding structure 104. Therefore, in the embodiment of the present invention, by disposing the light-guiding structure 104 on a side of the microstrip line 101 away from the ground electrode 103, there is no need to provide a hollow structure on the ground electrode 103, which can avoid the influence of the hollow structure on the ground electrode 103 on the radio frequency signal, thereby achieving good control of the radio frequency signal by the microstrip line 101.

[0085] Specifically, Figure 10-13As shown, the first substrate 31 includes a first sub-substrate 311 and a second sub-substrate 312 located on a side of the first sub-substrate 311 away from the ground electrode 103, a groove 1043 is provided on the side of the first sub-substrate 311 away from the ground electrode 103 and / or a groove 1043 is provided on a side of the second sub-substrate 312 close to the ground electrode 103, and a metal reflective layer 1044 is used to cover the surface of the groove 1043, thereby forming a light guide structure 104, wherein the metal reflective layer 1044 will conduct the light in the light guide structure 104 In order to prevent light from leaking and causing a large amount of loss during the transmission of the light-guiding structure 104, a hollow structure is provided on the metal reflective layer 1044 on the side of the groove 1043 close to the photodielectric layer 102 to form a light output opening 1041, so that light can be output from the light output opening 1041, ensuring that the light can be guided into the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103, so as to change the dielectric constant of the photodielectric layer 102, thereby controlling the phase shift of the RF signal transmitted on the microstrip line 101.

[0086] Continue to refer Figure 10-13 Optionally, the light-guiding structure 104 is arranged to at least partially overlap with the photo-induced dielectric layer 102, so that the light-guiding structure 104 is used to conduct light to the photo-induced dielectric layer 102, so as to change the dielectric constant of the photo-induced dielectric layer 102, thereby realizing phase shift control of the radio frequency signal transmitted on the microstrip line 101. It can be understood that the light-guiding structure 104 and the photo-induced dielectric layer 102 can be partially overlapped, or the vertical projection of the light-guiding structure 104 in the plane where the photo-induced dielectric layer 102 is located can be located in the photo-induced dielectric layer 102, and further, the photo-induced dielectric layer 102 and the light-guiding structure 104 can overlap along the thickness direction of the photo-induced dielectric layer 102. Those skilled in the art can set the position of the light-guiding structure 104 according to actual needs, as long as the light can be conducted to the photo-induced dielectric layer 102.

[0087] Continue to refer Figure 10-13 Optionally, the light-guiding structure 104 is located on a side of the microstrip line 101 away from the ground electrode 103 , and / or the light-guiding structure 104 is located on a side of the ground electrode 103 away from the microstrip line 101 .

[0088] Among them, the light-guiding structure 104 can be located on the side of the microstrip line 101 away from the ground electrode 103, or, the light-guiding structure 104 can be located on the side of the ground electrode 103 away from the microstrip line 101, or, the light-guiding structure 104 is provided on the side of the microstrip line 101 away from the ground electrode 103 and the side of the ground electrode 103 away from the microstrip line 101, so as to guide the light into the photodielectric layer 102, thereby controlling the change of the dielectric constant of the photodielectric layer 102 through the light, and further realizing the control of the phase shift of the radio frequency signal transmitted on the microstrip line 101. Those skilled in the art can flexibly set it according to actual needs.

[0089] Continue to refer Figure 10-13 Optionally, the light guide structure 104 includes a light output opening 1041 , and a vertical projection of the light output opening 1041 on the plane where the microstrip line 101 is located does not overlap with the microstrip line 101 .

[0090] For example, Figure 10-13 As shown, taking the light guide structure 104 located on the side of the microstrip line 101 away from the ground electrode 103 as an example, the light guide structure 104 includes a light output opening 1041, and the light can be set to be output only from the light output opening 1041, thereby avoiding light leakage and large loss during the transmission process of the light guide structure 104.

[0091] Continue to refer Fig.11 Optionally, along a direction parallel to the plane where the photodielectric layer 102 is located, the light output opening 1041 includes a first boundary 10411, the first boundary 10411 is the boundary of the light output opening 1041 on the side close to the microstrip line 101, the microstrip line 101 includes a second boundary 1011, the second boundary 1011 is the boundary of the microstrip line 101 on the side close to the light output opening 1041, and the shortest distance between the first boundary 10411 and the second boundary 1011 is D1, wherein 0<D1≤2mm.

[0092] Among them, Fig.11 As shown, if the shortest distance D1 between the first boundary 10411 and the second boundary 1011 is too large, the distance between the light output opening 1041 and the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103 will be far away, and the light output at the light output opening 1041 will be greatly attenuated in the process of propagating to the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103, thereby reducing the light utilization rate. In the embodiment of the present invention, by setting the shortest distance D1 between the first boundary 10411 of the light output opening 1041 and the second boundary 1011 of the microstrip line 101 to satisfy 0<D1≤2mm, the light output opening 1041 is closer to the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103, which helps to improve the light utilization rate.

[0093] Continue to refer Figure 10-13Optionally, the groove 1043 is located on a side of the first sub-substrate 311 away from the ground electrode 103, the groove 1043 includes a first top surface 10431 and a first side wall 10432, the first top surface 10431 is located on a side of the groove 1043 close to the second sub-substrate 312, the metal reflective layer 1044 includes a first metal reflective layer 10441 and a second metal reflective layer 10442, the first metal reflective layer 10441 covers the first side wall 10432, the second metal reflective layer 10442 covers the first top surface 10431, and the light output opening 1041 is set on the first metal reflective layer 10442.

[0094] Specifically, Figure 10-13 As shown, taking the groove 1043 located on the side of the first sub-substrate 311 away from the ground electrode 103 as an example, when preparing the light guide structure 104, the groove 1043 is set on the side of the first sub-substrate 311 away from the ground electrode 103, the groove 1043 includes a first top surface 10431 and a first side wall 10432, a first metal reflective layer 10441 is formed on one side of the groove 1043, the first metal reflective layer 10441 covers the first side wall 10432, the first metal reflective layer 10441 is etched to form a light output opening 1041, so that light is output from the light output opening 1041, a second metal reflective layer 10442 is set on one side of the second sub-substrate 312, the first sub-substrate 311 and the second sub-substrate 312 are bonded together so that the second metal reflective layer 10442 covers the first top surface 10431, and the light guide structure 104 is formed in the first substrate 31. The first substrate 31 includes a first sub-substrate 311 and a second sub-substrate 312 , and a light guide structure 104 is formed between the first sub-substrate 311 and the second sub-substrate 312 , thereby reducing the manufacturing difficulty of the light guide structure 104 .

[0095] Continue to refer Figure 10-13 Optionally, the groove 1043 is located on a side of the first sub-substrate 311 away from the ground electrode 103, the first sub-substrate 311 is a flexible substrate, and the groove 1043 is formed by a stamping process.

[0096] Specifically, Figure 10-13 As shown, taking the example that the groove 1043 is located on the side of the first sub-substrate 311 away from the ground electrode 103, the first sub-substrate 311 can be set as a flexible substrate, so that the groove 1043 can be formed by an imprinting process, for example, the groove 1043 is formed on the first sub-substrate 311 by a nanoimprinting process. Compared with the prior art, no etching process is required, thereby reducing the processing difficulty.

[0097] Among them, optionally, the material of the flexible substrate includes polyimide (PI), liquid crystal polymer (LCP), metal, etc., so that the first sub-substrate 311 has the characteristics of low cost and good flexibility. For example, aluminum film is used as the flexible substrate. Those skilled in the art can set the material of the first sub-substrate 311 according to actual needs, and the embodiment of the present invention is not limited to this.

[0098] Continue to refer Fig.12 Optionally, an angle between the first top surface 10431 and the first side wall 10432 is θ1, where 0<θ1<90°.

[0099] Among them, Fig.12 As shown, by setting the angle θ1 between the first top surface 10431 and the first side wall 10432 to satisfy 0<θ1<90°, that is, the first side wall 10432 is a slope, when the first metal reflective layer 10441 is formed on one side of the groove 1043, the first metal reflective layer 10441 can more easily cover the first side wall 10432, thereby improving the uniformity of the deposition of the first metal reflective layer 10441 at the first side wall 10432 and improving the light leakage phenomenon at the first side wall 10432.

[0100] Fig.14 A partial cross-sectional structural diagram of another phase shifter provided in an embodiment of the present invention, Fig.15 for Fig.14 The enlarged structural diagram at N is as follows: Fig.10 , Fig.14 and Fig.15 As shown, optionally, the groove 1043 is located on a side of the second sub-substrate 312 close to the ground electrode 103, the groove 1043 includes a second top surface 10433 and a second side wall 10434, the second top surface 10433 is located on a side of the groove 1043 close to the first sub-substrate 311, the metal reflective layer 1044 includes a first metal reflective layer 10441 and a second metal reflective layer 10442, the first metal reflective layer 10441 covers the second top surface 10433, the second metal reflective layer 10442 covers the second side wall 10434, and the light output opening 1041 is set on the first metal reflective layer 10441.

[0101] Specifically, Fig.14 and Fig.15As shown, taking the groove 1043 located on the side of the second sub-substrate 312 close to the ground electrode 103 as an example, when preparing the light-guiding structure 104, the groove 1043 is prepared on one side of the second sub-substrate 312, and the groove 1043 includes a second top surface 10433 and a second side wall 10434, and a second metal reflective layer 10442 is prepared on one side of the groove 1043, and the second metal reflective layer 10442 covers the second side wall 10434; a first metal reflective layer 10441 is set on one side of the first sub-substrate 311, and the first metal reflective layer 10441 is etched to form a light output opening 1041, so that light is output from the light output opening 1041, and the first sub-substrate 311 and the second sub-substrate 312 are bonded to each other so that the first metal reflective layer 10441 covers the second top surface 10433, so as to form the light-guiding structure 104 in the first substrate 31. Among them, when etching the first metal reflective layer 10441, since there is no groove 1043 on the first sub-substrate 311, the first metal reflective layer 10441 is located in the same plane, making the etching process easier to implement and helping to improve the etching accuracy. In addition, by setting the first substrate 31 to include the first sub-substrate 311 and the second sub-substrate 312, a light guide structure 104 is formed between the first sub-substrate 311 and the second sub-substrate 312, thereby reducing the manufacturing difficulty of the light guide structure 104. Furthermore, the groove 1043 is set on the second sub-substrate 312, while the microstrip line 101 and other structures are set on the first sub-substrate 311, avoiding making an electrode layer and making the groove 1043 on the same substrate, and can form the groove 1043 and the microstrip line 101 and other structures on different sub-substrates respectively, and then the different sub-substrates are bonded, simplifying the preparation process, and avoiding the prepared groove 1043 from affecting the microstrip line 101, thereby affecting the phase shifting function of the phase shifter.

[0102] Continue to refer Fig.14 and Fig.15 Optionally, the groove 1043 is located on a side of the second sub-substrate 312 close to the ground electrode 103, the second sub-substrate 312 is a flexible substrate, and the groove 1043 is formed by embossing.

[0103] Specifically, Fig.14 and Fig.15 As shown, taking the example that the groove 1043 is located on the side of the first sub-substrate 311 close to the ground electrode 103, the second sub-substrate 312 can be set as a flexible substrate, so that the groove 1043 can be formed by an imprinting process, for example, the groove 1043 is formed on the second sub-substrate 312 by a nanoimprinting process. Compared with the prior art, no etching process is required, thereby reducing the processing difficulty.

[0104] Among them, optionally, the material of the flexible substrate includes polyimide (PI), liquid crystal polymer (LCP), metal, etc., so that the second sub-substrate 312 has the characteristics of low cost and good flexibility. For example, aluminum film is used as the flexible substrate. Those skilled in the art can set the material of the second sub-substrate 312 according to actual needs, and the embodiment of the present invention is not limited to this.

[0105] Continue to refer Fig.15 Optionally, an angle between the second top surface 10433 and the second side wall 10434 is θ2, where 0<θ2<90°.

[0106] Among them, Fig.15 As shown, by setting the angle θ2 between the second top surface 10433 and the second side wall 10434 to satisfy 0<θ2<90°, that is, the second side wall 10434 is a slope, when the second metal reflective layer 10442 is formed on one side of the groove 1043, the second metal reflective layer 10442 can more easily cover the second side wall 10434, thereby improving the uniformity of the deposition of the second metal reflective layer 10442 at the second side wall 10434 and improving the light leakage phenomenon at the second side wall 10434.

[0107] It should be noted that the shape of the groove 1043 can be arbitrarily set according to actual needs. For example, Figure 11-15 As shown, the cross section of the groove 1043 may be a trapezoid, or, Fig.16 A partial cross-sectional structural diagram of another phase shifter provided in an embodiment of the present invention, Fig.17 for Fig.16 The enlarged structural diagram at G is illustrative, such as Fig.16 and Fig.17 As shown, the cross section of the groove 1043 may also be a triangle. In other embodiments, the cross section of the groove 1043 may also be a rectangle, etc., which is not limited in the embodiment of the present invention.

[0108] Continue to refer Figure 14-15Optionally, the light-guiding structure 104 is arranged to at least partially overlap with the photo-induced dielectric layer 102, so that the light-guiding structure 104 is used to conduct light to the photo-induced dielectric layer 102, so as to change the dielectric constant of the photo-induced dielectric layer 102, thereby realizing phase shift control of the radio frequency signal transmitted on the microstrip line 101. It can be understood that the light-guiding structure 104 and the photo-induced dielectric layer 102 can be partially overlapped, or the vertical projection of the light-guiding structure 104 in the plane where the photo-induced dielectric layer 102 is located can be located in the photo-induced dielectric layer 102, and further, the photo-induced dielectric layer 102 and the light-guiding structure 104 can overlap along the thickness direction of the photo-induced dielectric layer 102. Those skilled in the art can set the position of the light-guiding structure 104 according to actual needs, as long as the light can be conducted to the photo-induced dielectric layer 102.

[0109] Continue to refer Figure 14-15 Optionally, the light-guiding structure 104 is located on a side of the microstrip line 101 away from the ground electrode 103 , and / or the light-guiding structure 104 is located on a side of the ground electrode 103 away from the microstrip line 101 .

[0110] Among them, the light-guiding structure 104 can be located on the side of the microstrip line 101 away from the ground electrode 103, or, the light-guiding structure 104 can be located on the side of the ground electrode 103 away from the microstrip line 101, or, the light-guiding structure 104 is provided on the side of the microstrip line 101 away from the ground electrode 103 and the side of the ground electrode 103 away from the microstrip line 101, so as to guide the light into the photodielectric layer 102, thereby controlling the change of the dielectric constant of the photodielectric layer 102 through the light, and further realizing the control of the phase shift of the radio frequency signal transmitted on the microstrip line 101. Those skilled in the art can flexibly set it according to actual needs.

[0111] Continue to refer Figure 14-15 Optionally, the light guide structure 104 includes a light output opening 1041 , and a vertical projection of the light output opening 1041 on the plane where the microstrip line 101 is located does not overlap with the microstrip line 101 .

[0112] For example, Figure 14-15 As shown, taking the light guide structure 104 located on the side of the microstrip line 101 away from the ground electrode 103 as an example, the light guide structure 104 includes a light output opening 1041, and the light can be set to be output only from the light output opening 1041, thereby avoiding light leakage and large loss during the transmission process of the light guide structure 104.

[0113] Continue to refer Fig.14Optionally, along a direction parallel to the plane where the photodielectric layer 102 is located, the light output opening 1041 includes a first boundary 10411, the first boundary 10411 is the boundary of the light output opening 1041 on the side close to the microstrip line 101, the microstrip line 101 includes a second boundary 1011, the second boundary 1011 is the boundary of the microstrip line 101 on the side close to the light output opening 1041, and the shortest distance between the first boundary 10411 and the second boundary 1011 is D1, wherein 0<D1≤2mm.

[0114] Among them, Fig.14 As shown, if the shortest distance D1 between the first boundary 10411 and the second boundary 1011 is too large, the distance between the light output opening 1041 and the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103 will be far away, and the light output at the light output opening 1041 will be greatly attenuated in the process of propagating to the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103, thereby reducing the light utilization rate. In the embodiment of the present invention, by setting the shortest distance D1 between the first boundary 10411 of the light output opening 1041 and the second boundary 1011 of the microstrip line 101 to satisfy 0<D1≤2mm, the light output opening 1041 is closer to the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103, which helps to improve the light utilization rate.

[0115] Fig.18 A partial cross-sectional structural diagram of another phase shifter provided in an embodiment of the present invention, Fig.19 for Fig.18 The enlarged structural diagram at I is as follows: Fig.18 and Fig.19 As shown, optionally, the light guide structure 104 includes a light output opening 1041, and the phase shifter provided in the embodiment of the present invention further includes a first substrate 31, and the first substrate 31 is located on the side of the microstrip line 101 away from the ground electrode 103. The first substrate 31 includes a first sub-substrate 311, a second sub-substrate 312, and a third sub-substrate 313, the third sub-substrate 313 is located on the side of the first sub-substrate 311 away from the ground electrode 103, and the second sub-substrate 312 is located on the side of the third sub-substrate 313 away from the first sub-substrate 311. The third sub-substrate 313 includes a first hollow portion 3131, and a third metal reflective layer 10443 is provided on a side of the first hollow portion 3131 close to the first sub-substrate 311, and a fourth metal reflective layer 10444 is provided on a side of the first hollow portion 3131 close to the second sub-substrate 312, and the light output opening 1041 is provided on the third metal reflective layer 10443.

[0116] Specifically, Fig.18 and Fig.19As shown, the first substrate 31 includes a first sub-substrate 311, a second sub-substrate 312 and a third sub-substrate 313. When preparing the light guide structure 104, a fourth metal reflective layer 10444 is prepared on one side of the second sub-substrate 312, and the third sub-substrate 313 is arranged on the side of the fourth metal reflective layer 10444 away from the second sub-substrate 312. The third sub-substrate 313 is etched to form a first hollow portion 3131, and a third metal reflective layer 10443 is prepared on one side of the first sub-substrate 311. The third metal reflective layer 10443 is etched to form a light output opening 1041. The first sub-substrate 311 and the third sub-substrate 313 are bonded to each other so that the third metal reflective layer 10443 is attached to the third sub-substrate 313, thereby forming the light guide structure 104 in the first substrate 31. In this embodiment, there is no need to set a groove structure on the first sub-substrate 311. Therefore, when etching the third metal reflective layer 10443 to form the light output opening 1041, since there is no groove structure on the first sub-substrate 311, the first metal reflective layer 10441 set on the first sub-substrate 311 is a plane. Compared with the solution of setting the groove 1043 on the first sub-substrate 311, the plane etching process is easier to implement, which helps to improve the etching accuracy. In addition, by setting the first substrate 31 to include the first sub-substrate 311, the second sub-substrate 312 and the third sub-substrate 313, the light guide structure 104 is formed on the third sub-substrate 313 between the first sub-substrate 311 and the second sub-substrate 312, which reduces the manufacturing difficulty of the light guide structure 104.

[0117] Based on the above embodiments, Fig. 20 A partial cross-sectional structural diagram of another phase shifter provided in an embodiment of the present invention is shown in FIG. Fig. 20 As shown, optionally, a light blocking layer 41 is provided on the side wall of the first hollow portion 3131 .

[0118] Specifically, Fig. 20 As shown, by setting a light-blocking layer 41 on the side wall of the first hollow portion 3131, light will not leak from the side wall of the first hollow portion 3131 and lose a lot of light during the transmission of the light-guiding structure 104, which helps to improve the utilization rate of light. The material of the light-blocking layer 41 may include metal or light-blocking pigment, etc. When the light-blocking layer 41 is set on the side wall of the first hollow portion 3131, the third sub-substrate 313 may be made of transparent material, so that the material of the third sub-substrate 313 has more choices. For example, the third sub-substrate 313 uses optical clear glue (optic clear, OC), and the side wall of the first hollow portion 3131 is coated with black pigment. Those skilled in the art can set it according to actual needs, and the embodiment of the present invention is not limited to this.

[0119] Continue to refer Fig.19 Optionally, the material of the third sub-substrate 313 is an opaque material.

[0120] Specifically, Fig.19 As shown, by setting the material of the third sub-substrate 313 to be an opaque material, the light can be prevented from leaking from the side wall of the first hollow portion 3131 in the third sub-substrate 313 during the transmission of the light guide structure 104 and causing a large amount of loss, which helps to improve the utilization rate of light. This solution does not require the provision of a light blocking layer 41 on the side wall of the first hollow portion 3131, simplifies the preparation process, and reduces the difficulty of preparation. Among them, the third sub-substrate 313 can be made of any opaque material, such as organic photoresist, metal, opaque resin, and graphite, etc., and the embodiment of the present invention is not limited to this.

[0121] It should be noted that the opaque material can be a black material, but is not limited to black materials. It can also be a material that can only block the light to which the photodielectric layer 102 can respond. The so-called light to which the photodielectric layer 102 can respond can be that when the light is irradiated to the photodielectric layer 102, the dielectric constant of the photodielectric layer 102 will change. For example, the light to which the photodielectric layer 102 can respond is blue light, and the opaque material can block the blue light.

[0122] Based on the above embodiments, continue to refer to Figure 2 , Fig.10 and Fig.14 Optionally, a vertical projection of the light guide structure 104 on the plane where the microstrip line 101 is located does not overlap with the microstrip line 101 .

[0123] Specifically, Figure 2 , Fig.10 and Fig.14 As shown, the vertical projection of the light guide structure 104 on the plane where the microstrip line 101 is located does not overlap with the microstrip line 101. It can be understood that the vertical projection of the light guide structure 104 on the plane where the microstrip line 101 is located does not overlap with the microstrip line 101, which means that there is no overlapping area between the light guide structure 104 and the microstrip line 101 along the thickness direction of the microstrip line 101. Among them, by setting the vertical projection of the light guide structure 104 on the plane where the microstrip line 101 is located not to overlap with the microstrip line 101, while avoiding the light output by the light guide structure 104 from being blocked by the microstrip line 101, the influence of the light guide structure 104 on the transmission of the radio frequency signal in the photodielectric layer 102 can also be reduced.

[0124] For example, Figure 2-4As shown, taking the case where the light-guiding structure 104 is located on the side of the microstrip line 101 close to the ground electrode 103 as an example, the vertical projection of the light-guiding structure 104 on the plane where the microstrip line 101 is located is set not to overlap with the microstrip line 101, so that the light-guiding structure 104 will not affect the thickness of the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103, thereby reducing the influence of the light-guiding structure 104 on the radio frequency signal transmitted on the microstrip line 101, so as to ensure the phase shift accuracy of the photodielectric layer 102 on the radio frequency signal.

[0125] In other embodiments, Figure 10-17 As shown, taking the light-guiding structure 104 located on the side of the microstrip line 101 away from the ground electrode 103 as an example, the light-guiding structure 104 includes a groove 1043 and a surface metal reflective layer 1044 covering the groove 1043, and the vertical projection of the light-guiding structure 104 on the plane where the microstrip line 101 is located is arranged not to overlap with the microstrip line 101, thereby reducing the influence of the metal reflective layer 1044 in the light-guiding structure 104 on the microstrip line 101, thereby reducing the influence of the light-guiding structure 104 on the radio frequency signal transmitted on the microstrip line 101. At the same time, since the light-guiding structure 104 does not overlap with the microstrip line 101 along the thickness direction of the microstrip line 101, a light output opening 1041 is set at any position of the light-guiding structure 104, and the light output from the light output opening 1041 will not be blocked by the microstrip line 101, thereby ensuring that the light can be introduced into the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103, so as to change the dielectric constant of the photodielectric layer 102, thereby controlling the phase shift of the radio frequency signal transmitted on the microstrip line 101.

[0126] It should be noted that the vertical projection of the light guide structure 104 on the plane where the microstrip line 101 is located does not overlap with the microstrip line 101, which is independent of the film layer structure where the light guide structure 104 is located. The light guide structure 104 can be located on the side of the microstrip line 101 away from the ground electrode 103, and / or, the light guide structure 104 is located on the side of the microstrip line 101 close to the ground electrode 103. For example, Fig.18 As shown, the phase shifter provided by the embodiment of the present invention includes a microstrip line setting area 21 and a non-microstrip line setting area 22. Along the thickness direction of the microstrip line 101, the microstrip line 101 overlaps with the microstrip line setting area 21, that is, along the thickness direction of the microstrip line 101, the regional edge of the microstrip line setting area 21 overlaps with the edge of the microstrip line 101, and the light guide structure 104 is located in the non-microstrip line setting area 22, so that the light output by the light guide structure 104 is not blocked by the microstrip line 101, while ensuring the phase shifting effect of the photodielectric layer 102 on the radio frequency signal.

[0127] It should be noted that the above embodiments are only examples. In other embodiments, the vertical projection of the light guide structure 104 on the plane where the microstrip line 101 is located may also be arranged to overlap the microstrip line 101 (eg Figure 5Those skilled in the art may make settings according to actual needs, and the embodiments of the present invention are not limited to this.

[0128] Based on the above embodiments, Fig.21 A schematic diagram of the structure of another phase shifter provided in an embodiment of the present invention, Fig. 22 for Fig.21 The schematic diagram of the cross-sectional structure along the J-J' direction is as follows: Fig.21 and Fig. 22 As shown, optionally, the phase shifter provided in the embodiment of the present invention further includes a spacing structure 42 , and the spacing structure 42 is located between the microstrip line 101 and the ground electrode 103 , and the spacing structure 42 is located between the phase shifting units 10 .

[0129] Among them, Fig.21 and Fig. 22 As shown, since the dielectric constant of the photodielectric layer 102 is changed by the influence of light, and the phase of the RF signal is changed by the influence of the dielectric constant of the photodielectric layer 102, the phase adjustment can be achieved by controlling the light. The phase shifter provided in the embodiment of the present invention is provided with a spacing structure 42 between the phase shift units 10, and the spacing structure 42 is used to block the light, so that the light in different phase shift units 10 can be isolated by the spacing structure 42, thereby reducing the crosstalk between the light in different phase shift units 10, thereby improving the accuracy of phase adjustment. In addition, as Fig.21 and Fig. 22 As shown, the spacing structure 42 can also play a supporting role between the ground electrode 103 and the first substrate 31, reduce the difference in the distance between the ground electrode 103 and the first substrate 31 at various positions in the phase shifter, improve the uniformity of the thickness of the photodielectric layer 102, and further improve the accuracy of phase adjustment.

[0130] It should be noted that those skilled in the art may arbitrarily set the position of the spacing structure 42 as long as the mutual influence between the light in different phase shifting units 10 can be reduced, and the embodiment of the present invention is not limited to this.

[0131] For example, Fig.21 and Fig. 22 As shown, the spacing structure 42 can be set between two different phase shifting units 10 to reduce the mutual influence between the light in the two phase shifting units 10, thereby improving the accuracy of phase adjustment. In other embodiments, a spacing structure 42 can also be set every one or more phase shifting units 10, which is not limited in the embodiment of the present invention.

[0132] Based on the above embodiments, Fig.23 A schematic diagram of the structure of another phase shifter provided in an embodiment of the present invention is shown in FIG. Fig.23As shown, illustratively, since the distance between adjacent phase shifting units 10 is relatively close, the mutual influence between the light in adjacent phase shifting units 10 is relatively large, therefore, the spacing structure 42 can be set between any two adjacent phase shifting units 10 to reduce the mutual influence between the light in adjacent phase shifting units 10 and further improve the accuracy of phase adjustment.

[0133] Fig.24 A schematic diagram of the structure of another phase shifter provided in an embodiment of the present invention is shown in FIG. Fig.24 As shown, illustratively, the spacing structure 42 can also be arranged around the phase shift unit 10 to reduce the mutual influence between the light in different phase shift units 10 and reduce the interference of external ambient light on the light in the phase shift unit 10, thereby further improving the accuracy of phase adjustment.

[0134] In other embodiments, those skilled in the art may also dispose the spacing structure 42 between the microstrip line 101 and the ground electrode 103, or in any one or more film layers between the light-guiding structure 104 and the ground electrode 103, as long as it can form a shielding effect on the light in different phase shifting units 10.

[0135] It should be noted that the spacing structure 42 can be made of any opaque material, and those skilled in the art can set the material of the spacing structure 42 according to actual needs, which is not limited in the embodiment of the present invention.

[0136] Fig.25 A partial cross-sectional structural diagram of another phase shifter provided in an embodiment of the present invention is shown in FIG. Fig.25 As shown, optionally, the phase shifter provided in the embodiment of the present invention further includes a second substrate 32 , and the second substrate 32 is located on a side of the ground electrode 103 away from the microstrip line 101 .

[0137] Among them, Fig.25 As shown, taking the case where the light guide structure 104 is located on the side of the microstrip line 101 close to the ground electrode 103 as an example, by arranging the second substrate 32 on the side of the ground electrode 103 away from the microstrip line 101, the second substrate 32 can support and protect the phase shifter, thereby improving the robustness of the phase shifter. In addition, when preparing the light guide structure 104, the second substrate 32 can be used as a carrier, and the ground electrode 103, the photodielectric layer 102 and the microstrip line 101, etc., can be prepared on the second substrate 32 to reduce the difficulty of preparing the phase shifter.

[0138] It should be noted that the above embodiments are only examples. In the embodiments, those skilled in the art may set the position of the light-guiding structure 104 according to actual needs. For example, the light-guiding structure 104 may also be located on the side of the microstrip line 101 away from the ground electrode 103, or, the light-guiding structure 104 may be provided on both the side of the microstrip line 101 away from the ground electrode 103 and the side of the microstrip line 101 close to the ground electrode 103 to guide light into the photodielectric layer 102, thereby controlling the change in the dielectric constant of the photodielectric layer 102 through the light, and further realizing the control of the phase shift of the RF signal transmitted on the microstrip line 101. The embodiments of the present invention are not limited to this.

[0139] For example, the light guide structure 104 is located on the side of the microstrip line 101 close to the ground electrode 103. Fig.25 As shown, the light guide structure 104 may be disposed on a side of the photodielectric layer 102 away from the microstrip line 101. For example, the light guide structure 104 is an optical fiber or a light guide plate disposed on a side of the photodielectric layer 102 away from the microstrip line 101; or, Fig.26 A partial cross-sectional structural diagram of another phase shifter provided in an embodiment of the present invention is shown in FIG. Fig.26 As shown, the light guiding structure 104 may also be disposed on the side of the photodielectric layer 102 close to the microstrip line 101. For example, the light guiding structure 104 is an optical fiber or a light guiding plate disposed on the side of the photodielectric layer 102 close to the microstrip line 101, and the embodiment of the present invention is not limited to this.

[0140] Based on the above embodiments, Fig. 27 A partial cross-sectional structural diagram of another phase shifter provided in an embodiment of the present invention is shown in FIG. Fig. 27 As shown, taking the case where the light guide structure 104 is located on the side of the microstrip line 101 away from the ground electrode 103 as an example, by arranging the second substrate 32 on the side of the ground electrode 103 away from the microstrip line 101, the second substrate 32 can support and protect the phase shifter, thereby improving the robustness of the phase shifter. In addition, when preparing the light guide structure 104, the first substrate 31 can be used as a carrier, the microstrip line 101 and the photodielectric layer 102 can be prepared on the first substrate 31, the second substrate 32 can be used as a carrier, the ground electrode 103 can be prepared on the second substrate 32, and then the first substrate 31 and the second substrate 32 can be bonded to form a phase shifter, thereby further reducing the difficulty of preparing the phase shifter.

[0141] Continue to refer Figure 3-26 Optionally, the thickness of the photodielectric layer 102 is H1, where 0

[0142] Among them, Figure 3-26 ​As shown, if the thickness H1 of the photodielectric layer 102 is too large, the loss of the RF signal transmitted by the microstrip line 101 in the photodielectric layer 102 will increase. Therefore, the embodiment of the present invention helps to reduce the loss of the RF signal in the photodielectric layer 102 and improve the transmission efficiency of the RF signal by setting the thickness H1 of the photodielectric layer 102 to satisfy 0

[0143] Continue to refer Fig. 27 Optionally, the thickness of the first substrate 31 is H2, and the thickness of the second substrate 32 is H3, wherein 0<H2≤2mm, 0<H3≤2mm.

[0144] Among them, Fig. 27 As shown, if the thickness H2 of the first substrate 31 is too large, the volume of the phase shifter will increase. Therefore, by setting the thickness H2 of the first substrate 31 to satisfy 0<H2≤2mm, it is helpful to reduce the volume of the phase shifter to achieve a miniaturized phase shifter. Similarly, if the thickness H3 of the second substrate 32 is too large, the volume of the phase shifter will increase. Therefore, by setting the thickness H3 of the second substrate 32 to satisfy 0<H3≤2mm, it is helpful to reduce the volume of the phase shifter to achieve a miniaturized phase shifter.

[0145] Optionally, the radio frequency signal transmitted on the microstrip line 101 is a high frequency signal, for example, the radio frequency signal is a high frequency signal with a frequency greater than or equal to 1 GHz. It is understandable that the radio frequency signal includes but is not limited to the above examples.

[0146] It should be noted that those skilled in the art can arbitrarily set the shape of the microstrip line 101 according to actual needs, for example, Fig.10 As shown, the shape of the microstrip line 101 can be serpentine, or, Fig.28 A schematic diagram of the structure of another phase shifter provided in an embodiment of the present invention is shown in FIG. Fig.28 As shown, the shape of the microstrip line 101 can also be W-shaped. In other embodiments, the shape of the microstrip line 101 can also be U-shaped, spiral-shaped, comb-shaped, U-shaped, etc., which is not limited in the embodiment of the present invention.

[0147] It should be noted that the photodielectric layer 102 can be provided as a whole layer or separately.

[0148] For example, continue to refer to Figure 1 Taking the phase shifter including four phase shifting units 10 as an example, the photodielectric layer 102 is set as a whole layer. When preparing the phase shifter, it is only necessary to prepare the whole layer of the photodielectric layer 102, and there is no need to pattern the photodielectric layer 102, which reduces the difficulty of preparing the phase shifter.

[0149] Fig.29 A schematic diagram of the structure of another phase shifter provided in an embodiment of the present invention, Fig.30 for​ Fig.29 The schematic diagram of the cross-sectional structure along the K-K' direction is as follows: Fig.29 and Fig.30 As shown, illustratively, the photodielectric layer 102 may also be disposed only in the region where the microstrip line 101 is located, thereby reducing the material of the photodielectric layer 102 and helping to reduce the cost of the phase shifter.

[0150] The above embodiments are merely examples. In other embodiments, those skilled in the art may set the position of the photodielectric layer 102 according to actual needs, as long as the photodielectric layer 102 and the microstrip line 101 at least partially overlap.

[0151] Fig.31 A partial cross-sectional structural diagram of another phase shifter provided in an embodiment of the present invention is shown in FIG. Fig.31 As shown, optionally, the phase shifter provided in the embodiment of the present invention further includes a base substrate 33, which is located between the microstrip line 101 and the ground electrode 103, and the base substrate 33 can play a role in supporting the phase shifter. In addition, when preparing the phase shifter, the ground electrode 103 can be prepared on one side of the base substrate 33, and the photodielectric layer 102 and the microstrip line 101 can be prepared on the other side of the base substrate 33, thereby reducing the difficulty of preparing the phase shifter.

[0152] Fig.32 A schematic diagram of the structure of another phase shifter provided in an embodiment of the present invention, Fig.33 for Fig.32 The schematic diagram of the cross-sectional structure along the L-L' direction is as follows: Fig.32 and Fig.33 As shown, optionally, the phase shifter provided in the embodiment of the present invention further includes a base substrate 33, and the base substrate 33 is disposed in the same layer as the photodielectric layer 102. Specifically, as Fig.32 and Fig.33 As shown, the base substrate 33 includes a fourth hollow portion 331, and the photodielectric layer 102 is located in the fourth hollow portion 331, so that the base substrate 33 and the photodielectric layer 102 are arranged in the same layer. The base substrate 33 can play a role in supporting the phase shifter. By arranging the base substrate 33 and the photodielectric layer 102 in the same layer, it is helpful to reduce the thickness of the phase shifter, thereby helping to achieve a miniaturized phase shifter.

[0153] Based on the same inventive concept, an embodiment of the present invention further provides an antenna, which includes the phase shifter described in any embodiment of the present invention. Therefore, the antenna provided by the embodiment of the present invention has the technical effect of the technical solution in any of the above embodiments, and the structures that are the same or corresponding to the above embodiments and the explanation of terms are no longer repeated here.

[0154] Fig.34 A schematic diagram of the structure of an antenna provided by an embodiment of the present invention, Fig.35 for Fig.31 The schematic diagram of the cross-sectional structure along the M-M' direction is as follows: Fig.34 and Fig.35 As shown, optionally, the antenna provided by the embodiment of the present invention also includes a light source 50, which is used to emit light. The light source 50 includes at least one sub-light source group 501, and the sub-light source group 501 corresponds to the phase shifting unit 10. The sub-light source group 501 includes at least one sub-light source 5011, and the sub-light source 5011 corresponds to the light guide structure 104. The light guide structure 104 includes a light input opening 1045, and the sub-light source 5011 is arranged at the light input opening 1045 of the corresponding light guide structure 104.

[0155] Specifically, Fig.34 and Fig.35 As shown, the antenna includes a light source 50, which is used to emit light. The light guide structure 104 guides the light emitted by the light source 50 to introduce the light emitted by the light source 50 into the photodielectric layer 102. By controlling the light intensity or wavelength of the light emitted by the light source 50 to control the change of the dielectric constant of the photodielectric layer 102, the radio frequency signal transmitted on the microstrip line 101 is phase-shifted, thereby realizing the phase shift function of the radio frequency signal.

[0156] Continue to refer Fig.34 and Fig.35 The light source 50 includes at least one sub-light source group 501, which is arranged corresponding to the phase shift unit 10, and the sub-light source group 501 includes at least one sub-light source 5011, which is arranged corresponding to the light guide structure 104, wherein the number of the sub-light source groups 501 and the sub-light source 5011 can be set according to actual needs, for example, Fig.34 As shown, taking the example that the antenna includes four phase shifting units 10, each phase shifting unit 10 includes two light guide structures 104, the sub-light source groups 501 are arranged in a one-to-one correspondence with the phase shifting units 10, and the sub-light sources 5011 are arranged in a one-to-one correspondence with the light guide structures 104, which is not limited in this embodiment of the present invention.

[0157] Continue to refer Fig.34 and Fig.35 The light guide structure 104 includes a light input opening 1045 , and the sub-light source 5011 is disposed at the corresponding light input opening 1045 of the light guide structure 104 to guide the light emitted by the sub-light source 5011 into the light guide structure 104 .

[0158] It should be noted that Fig.34 and Fig.35The antenna shown only takes the example of setting the sub-light source 5011 on the side of the antenna. In other embodiments, the sub-light source 5011 can be set on the side of the microstrip line 101 away from the photodielectric layer 102, or can be set on the side of the ground electrode 103 away from the photodielectric layer 102. Those skilled in the art can set the position of the sub-light source 5011 according to actual needs.

[0159] Continue to refer Fig.34 and Fig.35 Optionally, the light source 50 further includes a light source control module 502 , and the sub-light sources 5011 are all connected to the light source control module 502 , and the light source control module 502 is used to independently control the brightness of the sub-light sources 5011 .

[0160] Specifically, Fig.34 and Fig.35 As shown, the light source control module 502 is used to control the brightness of the light emitted by the light source 50, thereby controlling the light intensity of the light introduced into the photodielectric layer 102 in the phase shift unit 10, so as to control the change of the dielectric constant of the photodielectric layer 102, and perform phase shifting on the RF signal transmitted on the microstrip line 101, thereby realizing the phase shifting function of the RF signal. Among them, the light source control module 502 independently controls the brightness of the sub-light sources 5011, so as to adjust the phase of the RF signal in each phase shift unit 10 differently, thereby realizing the required phase shifting function.

[0161] It should be noted that those skilled in the art may arbitrarily configure the light source 50 according to actual needs. For example, the light source 50 may be an LED light bar, etc. This is not limited in the embodiments of the present invention.

[0162] Fig.36 A schematic diagram of a partial cross-sectional structure of an antenna provided in an embodiment of the present invention is shown in FIG. Fig.34 and Fig.36 As shown, optionally, the antenna provided in the embodiment of the present invention further includes a radiation electrode 60 , and the ground electrode 103 at least partially overlaps with the radiation electrode 60 .

[0163] Specifically, Fig.34 and Fig.36 As shown, the radiation electrode 60 at least partially overlaps with the ground electrode 103 , and the dielectric constant of the photodielectric layer 102 is changed by controlling the light intensity or wavelength of the light, and the RF signal transmitted on the microstrip line 101 is phase-shifted and then radiated outward through the radiation electrode 60 .

[0164] It should be noted that the radiation electrode 60 at least partially overlaps with the ground electrode 103, which may be that the radiation electrode 60 partially overlaps with the ground electrode 103, or that the radiation electrode 60 is located within the projection of the ground electrode 103. It can be understood that the radiation electrode 60 at least partially overlaps with the ground electrode 103, which may be that the radiation electrode 60 at least partially overlaps with the ground electrode 103 along the thickness direction of the ground electrode 103, or that the vertical projection of the radiation electrode 60 on the plane where the ground electrode 103 is located at least partially overlaps with the ground electrode 103.

[0165] Continue to refer Fig.34 and Fig.36 Optionally, the light-guiding structure 104 at least partially overlaps with the photo-dielectric layer 102, and the light-guiding structure 104 is used to conduct light to the photo-dielectric layer 102 to change the dielectric constant of the photo-dielectric layer 102, thereby achieving phase shift control of the radio frequency signal transmitted on the microstrip line 101. It can be understood that the light-guiding structure 104 and the photo-dielectric layer 102 can partially overlap, or the vertical projection of the light-guiding structure 104 in the plane where the photo-dielectric layer 102 is located can be located in the photo-dielectric layer 102, and further, the photo-dielectric layer 102 and the light-guiding structure 104 can overlap along the thickness direction of the photo-dielectric layer 102. Those skilled in the art can set the position of the light-guiding structure 104 according to actual needs, as long as the light can be conducted to the photo-dielectric layer 102.

[0166] Continue to refer Fig.34 and Fig.36 Optionally, the phase shifter in the antenna provided in the embodiment of the present invention further includes a first substrate 31, the first substrate 31 is located on the side of the microstrip line 101 away from the ground electrode 103, the first substrate 31 includes a first sub-substrate 311 and a second sub-substrate 312, the second sub-substrate 312 is located on the side of the first sub-substrate 311 away from the ground electrode 103, and the light guide structure 104 is located on the side of the first sub-substrate 311 away from the ground electrode 103. Fig.34 and Fig.36 As shown, by setting the light guide structure 104 in the first substrate 31, the light guide structure 104 is located on the side of the microstrip line 101 away from the ground electrode 103, thereby avoiding the light guide structure 104 from affecting the thickness of the photodielectric layer 102 and improving the phase shift accuracy of the photodielectric layer 102.

[0167] It should be noted that Fig.34 and Fig.36 The antenna shown in the figure only takes the case where the light guide structure 104 is located on the side of the first sub-substrate 311 away from the ground electrode 103 as an example. In other embodiments, the light guide structure 104 may also be located on the side of the second sub-substrate 312 close to the ground electrode 103. Those skilled in the art may set the position of the light guide structure 104 according to actual needs. Fig.36 Optionally, the phase shifter also includes a second substrate 32, the second substrate 32 is located on a side of the ground electrode 103 away from the microstrip line 101, the radiation electrode 60 is located on a side of the second substrate 32 away from the microstrip line 101, the ground electrode 103 includes a second hollow portion 1031, and the vertical projection of the radiation electrode 60 on the plane where the ground electrode 103 is located covers the second hollow portion 1031.

[0168] Specifically, Fig.36 As shown, the ground electrode 103 is provided with a second hollow portion 1031, and the vertical projection of the radiation electrode 60 on the plane where the ground electrode 103 is located covers the second hollow portion 1031. The radio frequency signal is transmitted between the microstrip line 101 and the ground electrode 103. The dielectric constant of the photodielectric layer 102 between the microstrip line 101 and the ground electrode 103 changes after being affected by the light, and the radio frequency signal is phase-shifted to change the phase of the radio frequency signal. The phase-shifted radio frequency signal is coupled to the radiation electrode 60 at the second hollow portion 1031 of the ground electrode 103, and the radiation electrode 60 radiates the signal outward.

[0169] It should be noted that the radiation electrodes 60 are disposed correspondingly to the phase shifting units 10 , for example, the radiation electrodes 60 are disposed correspondingly to the phase shifting units 10 , and the radiation electrodes 60 corresponding to different phase shifting units 10 are insulated from each other.

[0170] Fig.37 A partial cross-sectional structural diagram of another antenna provided in an embodiment of the present invention is shown in FIG. Fig.37 As shown, optionally, the second substrate 32 includes a fourth sub-substrate 321 and a fifth sub-substrate 322, the fourth sub-substrate 321 is located on a side of the fifth sub-substrate 322 away from the microstrip line 101, the radiation electrode 60 is located on a side of the fourth sub-substrate 321 away from the fifth sub-substrate 322, and the ground electrode 103 is located on a side of the fifth sub-substrate 322 away from the fourth sub-substrate 321.

[0171] Specifically, Fig.37 As shown, the second substrate 32 includes a fourth sub-substrate 321 and a fifth sub-substrate 322. When preparing the antenna, a radiation electrode 60 can be prepared on one side of the fourth sub-substrate 321, and a ground electrode 103 can be prepared on one side of the fifth sub-substrate 322. Then, the fourth sub-substrate 321 and the fifth sub-substrate 322 are bonded to each other, so that the radiation electrode 60 and the ground electrode 103 are respectively located on both sides of the second substrate 32. Compared with the second substrate 32 being a single-layer substrate, by setting the second substrate 32 to include the fourth sub-substrate 321 and the fifth sub-substrate 322, when preparing the antenna, there is no need to perform a double-sided etching process on the second substrate 32 to form the radiation electrode 60 and the ground electrode 103, which can reduce the difficulty of manufacturing the antenna and help reduce the cost of the antenna.

[0172] Continue to refer Figure 34-37 Optionally, the phase shifter also includes a second substrate 32, which is located on a side of the ground electrode 103 away from the microstrip line 101; the antenna also includes a feeding network 61, which is located on a side of the second substrate 32 away from the microstrip line 101, and the ground electrode 103 includes a third hollow portion 1032, and the vertical projection of the feeding network 61 on the plane where the ground electrode 103 is located covers the third hollow portion 1032.

[0173] like Figure 34-37 As shown, the feeding network 61 is used to transmit the RF signal to each phase shift unit 10, wherein the feeding network 61 may be distributed in a dendrite shape and include a plurality of branches, and one branch provides the RF signal to one phase shift unit 10. Specifically, the feeding network 61 is located on the side of the second substrate 32 away from the microstrip line 101, the ground electrode 103 includes a third hollow portion 1032, and the vertical projection of the feeding network 61 on the plane where the ground electrode 103 is located covers the third hollow portion 1032. The RF signal transmitted by the feeding network 61 is coupled to the microstrip line 101 at the third hollow portion 1032 of the ground electrode 103, and the dielectric constant of the photodielectric layer 102 changes after being affected by light, thereby achieving phase shifting of the RF signal on the microstrip line 101.

[0174] Fig.38 A partial cross-sectional structural diagram of another antenna provided in an embodiment of the present invention is shown as follows: Fig.34 and 38 As shown, optionally, the antenna provided in the embodiment of the present invention further includes a feeding network 61 , and the feeding network 61 is disposed on the same layer as the microstrip line 101 , and the feeding network 61 is connected to the microstrip line 101 .

[0175] Among them, Fig.34 and 38 As shown, by setting the feeding network 61 and the microstrip line 101 in the same layer, and the feeding network 61 is directly electrically connected to the microstrip line 101, compared with the RF signal transmitted by the feeding network 61 being coupled to the microstrip line 101 through the photodielectric layer 102, in the present technical solution, the feeding network 61 directly transmits the RF signal to the microstrip line 101 without coupling, which can avoid the problem of RF signal loss caused by coupling, thereby reducing the insertion loss of the antenna and improving the antenna performance.

[0176] Continue to refer Fig.36 and Fig.37 Optionally, the antenna further includes a radio frequency signal interface 63 and a pad 64. One end of the radio frequency signal interface 63 is connected to the feeding network 61 and fixed by the pad 64, and the other end of the radio frequency signal interface 63 is used to connect to external circuits such as a high frequency connector.

[0177] Based on the same inventive concept, an embodiment of the present invention further provides a method for preparing a phase shifter, which is used to prepare the phase shifter provided by any of the above embodiments. The explanations of the structures and terms that are the same or corresponding to the above embodiments are not repeated here. Fig.39 A schematic diagram of a process for preparing a phase shifter according to an embodiment of the present invention is shown in FIG. Fig.39 As shown, the method comprises the following steps:

[0178] Step 110: Provide a photodielectric layer.

[0179] The dielectric constant of the photodielectric layer will change according to the light. For example, the dielectric constant of the photodielectric layer can be changed by controlling the light intensity. The dielectric constant of the photodielectric layer can also be changed by controlling the wavelength of the light. This embodiment is not limited to this, as long as the dielectric constant of the photodielectric layer can be changed.

[0180] It should be noted that the embodiment of the present invention does not limit the material of the photodielectric layer, and those skilled in the art can select it according to actual conditions, as long as the photodielectric layer can be used to phase shift the radio frequency signal transmitted on the microstrip line and change the phase of the radio frequency signal. Exemplarily, the material of the photodielectric layer may include liquid crystal, azo dye or azo polymer.

[0181] Step 120, preparing a microstrip line on one side of the photodielectric layer, preparing a ground electrode on a side of the photodielectric layer away from the microstrip line, and preparing at least one light-guiding structure to form at least one phase shifting unit, wherein the light-guiding structure at least partially overlaps with the photodielectric layer.

[0182] Among them, a microstrip line is prepared on one side of the photodielectric layer, and a ground electrode is prepared on the side of the photodielectric layer away from the microstrip line. The microstrip line is used to transmit radio frequency signals, so that the radio frequency signals can be transmitted in the photodielectric layer between the microstrip line and the ground electrode. Due to the change of the dielectric constant of the photodielectric layer (the dielectric constant of the photodielectric layer changes after being affected by the light intensity or wavelength of the light), the radio frequency signal transmitted on the microstrip line will be phase shifted, thereby changing the phase of the radio frequency signal, realizing the phase shift function of the radio frequency signal.

[0183] Furthermore, by preparing at least one light-guiding structure, and the light-guiding structure at least partially overlaps with the photodielectric layer, light is conducted into the photodielectric layer to change the dielectric constant of the photodielectric layer, thereby achieving phase shift control of the radio frequency signal transmitted on the microstrip line.

[0184] Optionally, before preparing at least one light guide structure, the method further includes:

[0185] Providing a first substrate, wherein the first substrate includes a first sub-substrate and a second sub-substrate;

[0186] Preparing at least one light-guiding structure, comprising:

[0187] Prepare a groove on one side of the first sub-substrate, and prepare a first metal reflective layer on one side of the groove;

[0188] Etching the first metal reflective layer to form a light output opening;

[0189] Prepare a second metal reflective layer on one side of the second sub-substrate;

[0190] The first sub-substrate is bonded to the second sub-substrate to form the light guide structure in the first substrate.

[0191] Specifically, a groove is prepared on one side of the first sub-substrate, the groove includes a first top surface and a first side wall, a first metal reflective layer is formed on one side of the groove, the first metal reflective layer covers the first side wall, the first metal reflective layer is etched to form a light output opening, and the light is output from the light output opening, a second metal reflective layer is prepared on one side of the second sub-substrate, the first sub-substrate is bonded to the second sub-substrate so that the second metal reflective layer covers the first top surface, and a light guide structure is formed in the first substrate. Among them, by setting the first substrate to include the first sub-substrate and the second sub-substrate, the light guide structure is formed between the first sub-substrate and the second sub-substrate, which reduces the difficulty of manufacturing the light guide structure.

[0192] Optionally, before preparing at least one light guide structure, the method further includes:

[0193] Providing a first substrate, wherein the first substrate includes a first sub-substrate and a second sub-substrate;

[0194] Preparing at least one light-guiding structure, comprising:

[0195] Prepare a first metal reflective layer on one side of the first sub-substrate;

[0196] Etching the first metal reflective layer to form a light output opening;

[0197] A groove is formed on one side of the second sub-substrate, and a second metal reflective layer is formed on one side of the groove;

[0198] The first sub-substrate is bonded to the second sub-substrate to form a light guide structure in the first substrate.

[0199] Specifically, a groove is prepared on one side of the second sub-substrate, the groove includes a second top surface and a second side wall, a second metal reflective layer is prepared on one side of the groove, and the second metal reflective layer covers the second side wall; a first metal reflective layer is arranged on one side of the first sub-substrate, the first metal reflective layer is etched to form a light output opening, and light is output from the light output opening, and the first sub-substrate is bonded to the second sub-substrate so that the first metal reflective layer covers the second top surface, so as to form a light guide structure in the first substrate. When etching the first metal reflective layer, since there is no groove on the first sub-substrate, the first metal reflective layer is located in the same plane, so that the etching process is easier to implement, which helps to improve the etching accuracy. In addition, by arranging the first substrate to include the first sub-substrate and the second sub-substrate, a light guide structure is formed between the first sub-substrate and the second sub-substrate, which reduces the manufacturing difficulty of the light guide structure.

[0200] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A phase shifter, characterized in that: include: at least one phase shift unit, the phase shift unit comprising a microstrip line, a photodielectric layer, a ground electrode and at least one light guiding structure; The microstrip line is located at one side of the photodielectric layer, and the ground electrode is located at a side of the photodielectric layer away from the microstrip line; The light-guiding structure at least partially overlaps with the photodielectric layer, and the light-guiding structure is used to guide light into the photodielectric layer; The light-guiding structure comprises a light output opening; Along a direction parallel to the plane where the photodielectric layer is located, the light output opening includes a first boundary, and the first boundary is the boundary of the light output opening close to the microstrip line; the microstrip line includes a second boundary, and the second boundary is the boundary of the microstrip line close to the light output opening. The shortest distance between the first boundary and the second boundary is D1, wherein 0<D1≤2mm.

2. The phase shifter according to claim 1, characterized in that: The light-guiding structure is located on a side of the microstrip line away from the ground electrode, and / or the light-guiding structure is located on a side of the microstrip line close to the ground electrode.

3. The phase shifter according to claim 1, characterized in that A vertical projection of the light output opening on the plane where the microstrip line is located does not overlap with the microstrip line.

4. The phase shifter according to claim 1, characterized in that: The phase shifter further includes a first substrate, which is located on a side of the microstrip line away from the ground electrode; The light guide structure is located on the first substrate.

5. The phase shifter according to claim 1, characterized in that: The phase shifter further includes a first substrate, which is located on a side of the microstrip line away from the ground electrode; The first substrate includes a first sub-substrate and a second sub-substrate, wherein the second sub-substrate is located at a side of the first sub-substrate away from the ground electrode; The light guide structure comprises a groove and a metal reflective layer; The groove is located on a side of the first sub-substrate away from the ground electrode, and / or the groove is located on a side of the second sub-substrate close to the ground electrode; The metal reflective layer covers the surface of the groove, and the light output opening is arranged on the metal reflective layer at a side of the groove close to the photodielectric layer.

6. The phase shifter according to claim 5, characterized in that The groove is located on a side of the first sub-substrate away from the ground electrode; The groove comprises a first top surface and a first side wall, wherein the first top surface is located at a side of the groove close to the second sub-substrate; The metal reflective layer includes a first metal reflective layer and a second metal reflective layer, the first metal reflective layer covers the first side wall, and the second metal reflective layer covers the first top surface; the light output opening is arranged on the first metal reflective layer.

7. The phase shifter according to claim 5, characterized in that The groove is located on a side of the first sub-substrate away from the ground electrode; The first sub-substrate is a flexible substrate, and the groove is formed by a stamping process.

8. The phase shifter according to claim 5, characterized in that The groove is located on a side of the second sub-substrate close to the ground electrode; The groove comprises a second top surface and a second side wall, and the second top surface is located at a side of the groove close to the first sub-substrate; The metal reflective layer includes a first metal reflective layer and a second metal reflective layer, the first metal reflective layer covers the second top surface, and the second metal reflective layer covers the second side wall; the light output opening is arranged on the first metal reflective layer.

9. The phase shifter according to claim 5, characterized in that: The groove is located on a side of the second sub-substrate close to the ground electrode; The second sub-substrate is a flexible substrate, and the groove is formed by embossing.

10. The phase shifter according to claim 1, characterized in that The phase shifter further includes a first substrate, which is located on a side of the microstrip line away from the ground electrode; The first substrate includes a first sub-substrate, a second sub-substrate and a third sub-substrate, the third sub-substrate is located on a side of the first sub-substrate away from the ground electrode, and the second sub-substrate is located on a side of the third sub-substrate away from the first sub-substrate; The third sub-substrate includes a first hollow portion, a third metal reflective layer is arranged on a side of the first hollow portion close to the first sub-substrate, a fourth metal reflective layer is arranged on a side of the first hollow portion close to the second sub-substrate, and the light output opening is arranged on the third metal reflective layer.

11. The phase shifter according to claim 10, characterized in that: A light blocking layer is disposed on the side wall of the first hollow portion.

12. The phase shifter according to claim 10, characterized in that The third sub-substrate is made of an opaque material.

13. The phase shifter according to any one of claims 1 to 11, characterized in that: A vertical projection of the light-guiding structure on the plane where the microstrip line is located does not overlap with the microstrip line.

14. The phase shifter according to claim 1, characterized in that The phase shifter further comprises a spacing structure, wherein the spacing structure is located between the microstrip line and the ground electrode; And the spacing structure is located between the phase shifting units.

15. An antenna, characterized in that: The phase shifter comprises the phase shifter as claimed in any one of claims 1 to 14.

16. The antenna according to claim 15, characterized in that The antenna also includes a light source, and the light source is used to emit light; The light source includes at least one sub-light source group, and the sub-light source group corresponds to the phase shift unit; the sub-light source group includes at least one sub-light source, and the sub-light source corresponds to the light guide structure; The light guide structure comprises a light input opening, and the sub-light source is arranged at the light input opening of the corresponding light guide structure.

17. The antenna according to claim 16, characterized in that The light source further comprises a light source control module, the sub-light sources are all connected to the light source control module, and the light source control module is used to independently control the brightness of the sub-light sources.

18. The antenna according to claim 15, characterized in that The antenna further includes a radiation electrode, and the ground electrode at least partially overlaps the radiation electrode.

19. The antenna according to claim 18, characterized in that The phase shifter further includes a second substrate, which is located on a side of the ground electrode away from the microstrip line; The radiation electrode is located on a side of the second substrate away from the microstrip line; The ground electrode includes a second hollow portion, and a vertical projection of the radiation electrode on a plane where the ground electrode is located covers the second hollow portion.

20. The antenna according to claim 19, characterized in that The second substrate includes a fourth sub-substrate and a fifth sub-substrate, wherein the fourth sub-substrate is located on a side of the fifth sub-substrate away from the microstrip line; The radiation electrode is located on a side of the fourth sub-substrate away from the fifth sub-substrate, and the ground electrode is located on a side of the fifth sub-substrate away from the fourth sub-substrate.

21. The antenna according to claim 20, characterized in that The antenna further comprises a feeding network, wherein the feeding network is located on a side of the second substrate away from the microstrip line; The ground electrode comprises a third hollow portion, and a vertical projection of the feeding network on the plane where the ground electrode is located covers the third hollow portion.

22. The antenna according to claim 20, characterized in that The antenna further comprises a feeding network, wherein the feeding network is arranged in the same layer as the microstrip line, and the feeding network is connected to the microstrip line.

23. A method for preparing a phase shifter, used for preparing the phase shifter according to any one of claims 1 to 14, characterized in that: include providing a photodielectric layer; A microstrip line is prepared on one side of the photodielectric layer, a ground electrode is prepared on the side of the photodielectric layer away from the microstrip line, and at least one light-guiding structure is prepared to form at least one phase-shifting unit, wherein the light-guiding structure at least partially overlaps with the photodielectric layer.

24. The method for preparing a phase shifter according to claim 23, characterized in that: Before preparing at least one light guide structure, the method further comprises: Providing a first substrate, wherein the first substrate includes a first sub-substrate and a second sub-substrate; Preparing at least one light-guiding structure, comprising: Prepare a groove on one side of the first sub-substrate, and prepare a first metal reflective layer on one side of the groove; Etching the first metal reflective layer to form a light output opening; Prepare a second metal reflective layer on one side of the second sub-substrate; The first sub-substrate is bonded to the second sub-substrate to form the light guide structure in the first substrate.

25. The method for preparing a phase shifter according to claim 23, characterized in that: Before preparing at least one light guide structure, the method further comprises: Providing a first substrate, wherein the first substrate includes a first sub-substrate and a second sub-substrate; Preparing at least one light-guiding structure, comprising: Prepare a first metal reflective layer on one side of the first sub-substrate; Etching the first metal reflective layer to form a light output opening; A groove is formed on one side of the second sub-substrate, and a second metal reflective layer is formed on one side of the groove; The first sub-substrate is bonded to the second sub-substrate to form a light guide structure in the first substrate.

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