Substrate processing equipment and substrate processing method

Abstract

The present invention relates to a substrate processing device and a substrate processing method. The substrate processing device includes: a chamber; a substrate support portion rotatably mounted in a process space within the chamber to allow at least one substrate to be positioned thereon; a first gas injection unit for injecting a source gas and a first purge gas for purging the source gas into a first region of the process space; a source gas supply source for supplying the source gas to the first gas injection unit; a first purge gas supply source for supplying the first purge gas to the first gas injection unit; a second gas injection unit spatially separated from the first region and configured to inject a reaction gas reacting with the source gas and a second purge gas for purging the reaction gas into a second region of the process space; a reaction gas supply source for supplying the reaction gas to the second gas injection unit; and a second purge gas supply source for supplying the second purge gas to the second gas injection unit.

Description

Technical Field

[0001] The present invention relates to an apparatus for processing a substrate, which performs a processing process such as a deposition process and an etching process on the substrate. Background Art

[0002] Typically, in order to manufacture solar cells, semiconductor devices, flat panel displays, etc., it is necessary to form a thin film layer, a thin film circuit pattern, or an optical pattern on a substrate. To this end, a treatment process is performed, and examples of the treatment process include a deposition process for depositing a thin film comprising a specific material on the substrate, a photoprocess for selectively exposing a portion of the thin film using a photosensitive material, and an etching process for removing the selectively exposed portion of the thin film to form a pattern.

[0003] A process of forming a thin film on a substrate or removing a thin film is performed by supplying a gas for forming a specific material or a gas for selectively removing a specific material or a material corresponding thereto to the substrate. Specifically, the process of forming a thin film can be performed by supplying a reaction gas and a source gas for forming the specific material, and in this case, the source gas and the reaction gas can be supplied to the substrate simultaneously or sequentially with a time difference.

[0004] As semiconductor device manufacturing processes develop towards fine processes, various methods for forming uniform thin films or patterns on fine patterns formed on substrate surfaces are being applied, one of which is the atomic layer deposition (ALD) process. The ALD process is not a process in which source gas and reaction gas are supplied simultaneously, but a process in which source gas and reaction gas are supplied according to a time difference to induce a reaction only on the substrate surface, and a thin film is formed on the substrate by the reaction between the source gas and the reaction gas. The source gas can be first supplied to the substrate to adsorb the source gas onto the substrate surface, and then the other source gases can be removed by using a purge gas. Subsequently, by supplying the reaction gas to the substrate, the reaction gas can react with the source gas adsorbed on the substrate surface, and then the other reaction gases can be purged using a purge gas. In the step of supplying the reaction gas, an atomic layer or a monolayer film is formed on the substrate surface based on the reaction between the source gas and the reaction gas. Such a process can be repeated until the desired thickness, and therefore, a film with a certain thickness can be formed on the substrate surface.

[0005] However, in the ALD process, since the reaction between the source gas and the reaction gas proceeds only on the substrate surface, there is a disadvantage that the film deposition rate is lower than that of a general chemical vapor deposition (CVD) process.

[0006] Furthermore, a process that rapidly repeats the steps of supplying source gas to the same process space, purging the supplied source gas, supplying a reactive gas, and purging the reactive gas has the disadvantage of being time-consuming. In the case of rapidly repeating the process, the supplied source gas or reactive gas is not completely exhausted (purged) from the process space to the outside of the chamber, and therefore, an atomic layer film is not formed, resulting in the disadvantage of the two gases meeting to form a CVD film.

[0007] In a process of rapidly supplying a source gas or a reaction gas and an ALD process based on the source gas or the reaction gas, a structure in which the two gases are not mixed during the process and a pure ALD film are required. Summary of the Invention

[0008] Technical issues

[0009] The present invention is designed to solve the above-mentioned problem, and its technical problem is to provide a process chamber in which source gas and reaction gas are not mixed in space.

[0010] Furthermore, the technical problem of the present invention is to provide an apparatus and method for adsorbing source gas and generating radio frequency (RF) plasma from purge gas in the same space when forming a thin film by an atomic layer deposition (ALD) process to improve the quality of the adsorbed film.

[0011] Furthermore, the technical problem of the present invention is to provide an apparatus for forming a film (pure ALD layer) on a substrate using a pure ALD process in order to densify a specific thin film or improve the film quality.

[0012] In addition, the technical problem of the present invention is to provide a device that purges the reaction gas remaining on the substrate in a purge gas space for separating the source gas space and the reaction gas space, and the reaction gas is quickly moved from the reaction gas space to the source gas space, and at the same time, plasma is supplied to a part of the purge gas supply unit that supplies the purge gas to quickly purge impurities in the generated thin film.

[0013] Technical Solution

[0014] According to the present invention, a substrate processing device for achieving the above-mentioned purpose may include: a chamber; a substrate supporting unit, at which one or more substrates are installed in a process space of the chamber, and the substrate supporting unit is rotatably installed; a first gas injection unit, for injecting a source gas and a first purge gas into a first area of ​​the process space, the first purge gas being used to purge the source gas; a source gas supply source, for supplying the source gas to the first gas injection unit; a first purge gas supply source, for supplying the first purge gas to the first gas injection unit; a second gas injection unit, for injecting a reaction gas and a second purge gas into a second area of ​​the process space that is spatially separated from the first area, the reaction gas being used to react with the source gas, and the second purge gas being used to purge the reaction gas; a reaction gas supply source, for supplying the reaction gas to the second gas injection unit; and a second purge gas supply source, for supplying the second purge gas to the second gas injection unit.

[0015] In the substrate treating apparatus according to the present invention, the first gas injection unit may include: a plurality of source gas injection holes injecting the source gas; and a plurality of first purge gas injection holes injecting the first purge gas.

[0016] In the substrate processing apparatus according to the present invention, the second gas injection unit may include: a plurality of reaction gas injection holes for injecting the reaction gas; and a plurality of second purge gas injection holes for injecting the second purge gas.

[0017] In the substrate processing apparatus according to the present invention, the second gas injection unit may inject one or more of the reaction gas and the second purge gas as plasma.

[0018] In the substrate processing apparatus according to the present invention, the second gas injection unit may include a second electrode unit for converting the reaction gas or the second purge gas into plasma.

[0019] In the substrate processing apparatus according to the present invention, the first gas injection unit may inject the first purge gas as plasma.

[0020] In the substrate treating apparatus according to the present invention, the first gas injection unit may include a first electrode unit for converting the first purge gas into plasma.

[0021] In the substrate processing apparatus according to the present invention, the second gas injection unit may include a plurality of reaction gas injection holes for injecting the reaction gas and a plurality of second purge gas injection holes for injecting the second purge gas. The source gas, the first purge gas, the reaction gas, and the second purge gas may be injected sequentially. The second gas injection unit may inject the first purge gas as plasma. The second gas injection unit may inject one or more of the reaction gas and the second purge gas as plasma.

[0022] In the substrate processing apparatus according to the present invention, the second gas injection unit may further include a process gas supply source connected to one of the reaction gas injection hole and the second purge gas injection hole.

[0023] In the substrate processing apparatus according to the present invention, the second gas injection unit may inject the second purge gas and then may inject the processing gas as plasma.

[0024] In the substrate processing apparatus according to the present invention, the second gas injection unit may include a plurality of reaction gas injection holes for injecting the reaction gas and a plurality of second purge gas injection holes for injecting the second purge gas, and the second gas injection unit may include a process gas supply source connected to one of the reaction gas injection holes and the second purge gas injection holes. The source gas, the first purge gas, the reaction gas, the second purge gas, and the process gas may be injected in sequence. The second gas injection unit may inject the process gas as plasma. The second gas injection unit may inject one or more of the reaction gas and the second purge gas as plasma.

[0025] In the substrate processing apparatus according to the present invention, each of the first electrode unit and the second electrode unit may be configured with a first electrode and a second electrode having a potential difference therebetween. Plasma may be generated by injecting one of a first purge gas, a reaction gas, and a second purge gas into a region between the first electrode and the second electrode.

[0026] The substrate processing apparatus according to the present invention may further include: a third gas injection unit for injecting a third purge gas into a third area between the first area and the second area; and a third purge gas supply source for injecting the third purge gas into the third gas injection unit.

[0027] In the substrate processing apparatus according to the present invention, the third purge gas may be injected in a plasma state.

[0028] In the substrate treating apparatus according to the present invention, the third purge gas unit may include a third electrode unit for converting the third purge gas into plasma.

[0029] In the substrate processing apparatus according to the present invention, the third electrode unit may be configured with a first electrode and a second electrode having a potential difference therebetween. Plasma may be generated by injecting a third purge gas into a region between the first electrode and the second electrode.

[0030] In the substrate processing apparatus according to the present invention, one of the first purge gas, the reaction gas, and the second purge gas may be connected to a remote plasma generating apparatus.

[0031] The substrate processing method according to the present invention may include: mounting each of a first substrate and a second substrate on a substrate supporting unit provided in a chamber, such that the first substrate is provided in a first region of a process space of the chamber and the second substrate is provided in a second region of the process space spatially separated from the first region; a source adsorption step of injecting a source gas onto the first substrate in the first region to adsorb the first source gas onto the first substrate; a first rotation step of rotating the substrate supporting unit such that the first substrate having the first source gas adsorbed thereon is provided in the second region; a thin film forming step of injecting a reaction gas onto the first substrate in the second region to form a thin film through a reaction between the reaction gas and the first source gas adsorbed on the first substrate; and a second rotation step of rotating the substrate supporting unit such that the first substrate having the thin film formed thereon is provided in the first region. A thin film having a predetermined thickness may be formed by repeating the source adsorption step, the first rotation step, the thin film forming step, and the second rotation step multiple times.

[0032] The substrate processing method according to the present invention may include a source purge step of injecting a first purge gas for purging the source gas onto the first substrate after the source adsorption step.

[0033] The substrate processing method according to the present invention may include a reaction gas purging step of injecting a second purge gas for purging the reaction gas onto the first substrate after the thin film forming step.

[0034] In the substrate processing method according to the present invention, one or more of the reaction gas and the second purge gas may be generated and injected as plasma.

[0035] In the substrate processing method according to the present invention, the first purge gas may be generated and injected as plasma.

[0036] The substrate processing method according to the present invention may include a reactive gas purging step of injecting a second purge gas for purging the reactive gas onto the first substrate after the thin film forming step. The first purge gas may be generated and injected as plasma. One or more of the reactive gas and the second purge gas may be generated and injected as plasma.

[0037] The substrate processing method according to the present invention may include a process gas injection step of injecting a process gas for performing a process on the thin film after the reaction gas purge step.

[0038] In the substrate processing method according to the present invention, the processing gas may be generated and injected as plasma.

[0039] The substrate processing method according to the present invention may include: a reactive gas purging step of injecting a second purge gas for purging the reactive gas onto the first substrate after the thin film forming step; and a process gas injection step of injecting a process gas for treating the thin film after the reactive gas purging step. The process gas may be generated and injected as plasma. One or more of the first purge gas, the reactive gas, and the second purge gas may be generated and injected as plasma.

[0040] In the substrate processing method according to the present invention, a first electrode unit disposed in the first region and a second electrode unit disposed in the second region may be provided. Each of the first electrode unit and the second electrode unit may be configured with a first electrode and a second electrode, with a potential difference between the first electrode and the second electrode. Plasma may be generated by injecting one of a first purge gas, a reaction gas, a second purge gas, and a process gas into the region between the first electrode and the second electrode.

[0041] In the substrate processing method according to the present invention, in the first rotation step or the second rotation step, a third purge gas may be injected to partition the first region and the second region.

[0042] In the substrate processing method according to the present invention, in the first rotation step or the second rotation step, a third purge gas is injected to additionally purge the first source gas adsorbed on the first substrate or additionally purge the reaction gas formed on the first substrate.

[0043] In the substrate processing method according to the present invention, the third purge gas may be generated and injected as plasma.

[0044] In the substrate processing method according to the present invention, in the first rotation step or the second rotation step, the third purge gas is injected to partition the first region and the second region.

[0045] In the substrate processing method according to the present invention, the third purge gas may be generated and injected as plasma.

[0046] In the substrate processing method according to the present invention, a reactive gas may be injected into the second substrate in the second region during the source adsorption step. The substrate processing method according to the present invention may further include injecting a source gas into the second substrate in the first region during the thin film formation step. Injecting the source gas into the first substrate in the first region and injecting the reactive gas into the second substrate in the second region may be performed simultaneously.

[0047] In the substrate processing method according to the present invention, a reactive gas may be injected onto the second substrate in the second region during the source adsorption step. The substrate processing method according to the present invention may further include injecting a source gas onto the second substrate in the first region during the thin film formation step. Injecting the reactive gas into the first substrate in the second region and injecting the source gas into the second substrate in the first region may be performed simultaneously.

[0048] Beneficial effects

[0049] According to a solution to this problem, the substrate processing apparatus according to the present invention can form a pure ALD film by injecting a purge gas into the space to completely divide the process space of the chamber into a source gas injection space and a reaction gas injection space.

[0050] In addition, the substrate processing apparatus according to the present invention can generate plasma in the source gas injection space, the reaction gas injection space, and the purge gas injection space to remove internal impurities of the film adsorbed on the substrate and the ALD film, thereby forming high-quality ALD films and pure ALD films. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 FIG. 1 is a diagram schematically showing the shape of a substrate processing apparatus according to an embodiment of the present invention.

[0052] Figure 2 is a diagram for describing a chamber cover of a substrate processing apparatus according to an embodiment of the present invention.

[0053] Figure 3 It is along Figure 2 The schematic diagram obtained by the line A'-A' is used to describe the upper cover of the chamber in the substrate processing apparatus according to the embodiment of the present invention. DETAILED DESCRIPTION

[0054] The terms described in the specification should be understood as follows.

[0055] As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "first" and "second" are used to distinguish one element from another, and these elements should not be limited by these terms.

[0056] It will be further understood that the terms “comprises,” “encompasses,” “has,” “includes,” and / or “contains,” when used herein, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof.

[0057] The term "at least one" should be understood to include any and all combinations of one or more of the associated listed items. For example, the meaning of "at least one of the first, second, and third items" means all combinations of two or more of the first, second, and third items as well as the first, second, or third item.

[0058] The term “on” should be interpreted to include the case where one element is formed on top of another element as well as the case where a third element is disposed therebetween.

[0059] Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

[0060] Figure 1 FIG. 1 is a diagram schematically illustrating a substrate processing apparatus according to an embodiment of the present invention. Figure 2 It is a plan view of the upper cover as seen from above in a chamber that cuts through the upper cover surface.

[0061] refer to Figure 1 and Figure 2 In the substrate processing apparatus according to the present invention, a process space 1 may be provided in a chamber. An upper cover may be provided at an upper portion of the process space 1 of the chamber, and a substrate support unit 600 may be provided at a lower portion of the chamber process space 1. One or more substrates (i.e., a plurality of substrates) may be rotatably mounted on the substrate support unit 600 and may be arranged at certain intervals or in pairs on the substrate support unit 600.

[0062] The first substrate 601 may be disposed in the first area 10 on the substrate support unit 600, and the first substrate 601 may be a plurality of substrates. The first substrate 601 may be configured with a first chip 601a and a second chip 601b, but is not limited thereto, and three or four chips may be disposed only in the first area 10. The second substrate 602 may be disposed in the second area 20, and the second substrate 602 may be a plurality of substrates. The second substrate 602 may be configured with a third chip 602a and a fourth chip 602b, but is not limited thereto, and three or four chips may be disposed only in the second area 20.

[0063] The process space 1 of the chamber may be divided into a first area 10 , a second area 20 and a third area 30 .

[0064] A first gas injection unit 100 for injecting a source gas from a source gas supply source 500 into the first region 10 via a source gas line 500a may be provided in the first region 10. A first gas injection unit 100 for injecting a first purge gas from a first purge gas supply source 510 into the first region 10 via a first purge gas line 510a may be provided in the first region 10.

[0065] The reaction gas supply source 900 can supply a reaction gas that reacts with the source gas to a second region 20 spatially separated from the first region 10 in the process space 1. The supplied reaction gas can be connected to the second gas injection unit 200 via a reaction gas line 900a and can be injected into the second region 20 by the second gas injection unit 200. The second purge gas supplied from the second purge gas supply source 910 via a second purge gas line 910a can be connected to the second gas injection unit 200 and can be injected into the second region 20 by the second gas injection unit 200. In addition, the second purge gas can be injected to purge the reaction gas remaining in the space from the second region 20. The first gas injection unit 100 and the second gas injection unit 200 can be coupled to the upper cover.

[0066] A third area 30 may be provided to divide the process space 1 of the chamber into the first area 10 and the second area 20. The third area 30 may divide the process space 1 of the chamber into the first area 10 and the second area 20 using a purge gas so that the source gas in the first area 10 is not mixed with the reaction gas in the second area 20. A third gas injection unit 300 that injects a third purge gas may be provided in the third area 30, and a third purge gas supply source (not shown) may be connected to the third gas injection unit 300 via a third purge gas line (not shown) and may inject the third purge gas into the third area 30. The third gas injection unit 300 may be coupled to the upper cover.

[0067] Figure 3 This is a diagram illustrating the chamber electrode structure in detail.

[0068] A first gas injection unit 100 injecting source gas and a first purge gas into the first region 10 , a second gas injection unit 200 injecting reaction gas and a second purge gas into the second region 20 , and a third gas injection unit 300 injecting a third purge gas into the third region 30 may be provided.

[0069] The first gas injection unit 100 that injects the source gas and the first purge gas into the first region 10 may include a first electrode unit 210. The first electrode unit 210 may include a first electrode 210c and a second electrode 220c. The first electrode 210c and the second electrode 220c may have a potential difference, and the source gas or the first purge gas may pass through a region between the first electrode 210c and the second electrode 220c, and thus may be plasma-like and injected into the first region 10.

[0070] The first flow path 540 and the second flow path 550 may be installed in the first gas injection unit 100, and the gas flow path structure of the first flow path 540 and the second flow path 550 may be a flow path having a long-hole tubular gun drill structure. The first flow path 540 and the second flow path 550 may be formed to pass through the interior of the first electrode 210c, and the first flow path 540 may allow the source gas to be injected from the source gas injection hole 520 at the end of the protrusion (not shown) protruding in the direction toward the substrate. The source gas injection hole 520 formed at the end of the protrusion may be connected to the first flow path 540, and the source gas may be supplied to the first flow path 540 by the source gas supply source 500 connected to the plurality of source gas injection holes 520 and injected into the first region 10. The second flow path 550 may be connected to the plurality of first purge gas injection holes 530, which are arranged in a space in an upward direction relative to the second electrode 220c. A plurality of first purge gas injection holes 530 disposed in the space above the second electrode 220 c may be connected to the second flow path 550, and the first purge gas may be supplied from the first purge gas supply source 510 to the second flow path 550 connected to the plurality of first purge gas injection holes 530 and injected into the first region 10. In this case, the first purge gas may pass through the region between the first electrode 210 c and the second electrode 220 c, which have a potential difference, and may be injected into the first region 10 in a plasma state. The first gas injection unit 100 may convert one or more of the source gas and the first purge gas into plasma and may inject the source gas or the first purge gas into the first region 10 in a plasma state. The first gas injection unit 100 may simultaneously inject the plasma source gas and the plasma first purge gas into the first region 10, or may inject the plasma source gas or the plasma first purge gas into the first region 10. Furthermore, the first purge gas may be supplied to the first flow path 540 to clean particles within the first flow path 540. On the other hand, the first purge gas may be supplied to the first flow path 540, and the source gas may be injected into the second flow path 550. Alternatively, the source gas or the first purge gas simultaneously supplied to the first and second flow paths 540 and 550 may be injected into the first region 10.

[0071] The second gas injection unit 200 for injecting the reaction gas and the second purge gas may include a second electrode unit 220. The second electrode unit 220 may include a first electrode 210a and a second electrode 220a. The first electrode 210a and the second electrode 220a may have a potential difference, and the reaction gas or the second purge gas may pass through the region between the first electrode 210a and the second electrode 220a, thereby being injected into the second region 20 in a plasma state.

[0072] The third flow path 940 and the fourth flow path 950 may be installed in the second gas injection unit 200, and the third flow path 940 and the fourth flow path 950 may be flow paths having a gun drill structure with a long hole tubular shape. The third flow path 940 and the fourth flow path 950 may pass through the first electrode 210a, and the third flow path 940 may allow the reaction gas to be injected from the reaction gas injection hole 920 at the end of the protrusion (not shown) protruding in the direction toward the substrate. The third flow path 940 may be connected to the reaction gas injection hole 920 at the end of the protrusion, and the reaction gas may be supplied to the third flow path 940 by the reaction gas supply source 900 connected to the plurality of gas injection holes 920 and injected into the second region 20. In this case, the reaction gas may pass through the region between the first electrode 210a and the second electrode 220a having a potential difference and may be injected into the second region 20 in a plasma state. In addition, the fourth flow path 950 may be connected to the plurality of second purge gas injection holes 930 provided in the space above the second electrode 220a. A plurality of second purge gas injection holes 930 disposed in the upward direction relative to the second electrode 220a can be connected to the fourth flow path 950, and the second purge gas can be supplied from the second purge gas supply source 910 to the fourth flow path 950 connected to the plurality of second purge gas injection holes 930 and injected into the second region 20. In this case, the second purge gas can pass through the region between the first electrode 210a and the second electrode 210a, which have a potential difference, and can be injected into the second region 20 in a plasma state. The second gas injection unit 200 can convert one or more of the reaction gas and the second purge gas into plasma and can inject the reaction gas or the second purge gas into the second region 20 in a plasma state. The second gas injection unit 200 can simultaneously inject the plasma reaction gas and the plasma second purge gas into the second region 20, or can inject the plasma reaction gas or the plasma second purge gas into the second region 20. The second purge gas can be supplied to the third flow path 940 to clean particles inside the third flow path 940. On the other hand, the reaction gas may be supplied to the fourth flow path 950, and the second purge gas may be injected into the third flow path 940. Alternatively, the reaction gas or the second purge gas simultaneously supplied to the third flow path 940 and the fourth flow path 950 may be injected into the second region 20.

[0073] The second gas injection unit 200 may include a plurality of reaction gas injection holes 920 for injecting reaction gas and a plurality of second purge gas injection holes 930 for injecting a second purge gas. The source gas, the first purge gas, the reaction gas, and the second purge gas may be injected sequentially, and the second gas injection unit 200 may inject the first purge gas as a plasma and may inject one or more of the reaction gas and the second purge gas as a plasma. The second gas injection unit 200 may supply a process gas supplied from a process gas supply source 960 connected to one of the reaction gas injection holes 920 and the second purge gas injection holes 930 into the second region 20. The second gas injection unit 200 may inject the second purge gas, and then, may convert the process gas into plasma, and may inject the process gas into the second region 20 in a plasma state.

[0074] The second gas injection unit 200 may include a plurality of reaction gas injection holes 920 for injecting the reaction gas, a plurality of second purge gas injection holes 930 for injecting the second purge gas, and a process gas supply source 960 connected to one of the reaction gas injection holes 920 and the second purge gas injection holes 930. The source gas, the first purge gas, the reaction gas, the second purge gas, and the process gas may be injected in sequence, and the second gas injection unit 200 may inject the process gas as plasma, and may inject one or more of the first purge gas, the reaction gas, and the second purge gas as plasma.

[0075] The third gas injection unit 300 for injecting the third purge gas into the third region 30 between the first region 10 and the second region 20 may include a third electrode unit 230. The third electrode unit 230 may include a first electrode 210b and a second electrode 220b. The first electrode 210b and the second electrode 220b may have a potential difference, and the third purge gas may pass through the region between the first electrode 210b and the second electrode 220b, thereby being injected into the third region 30 in a plasma state.

[0076] The fifth flow path 310 and the sixth flow path 320 may be installed in the third gas injection unit 300. The fifth flow path 310 and the sixth flow path 320 may be flow paths having a gun-drilled structure with a long hole tubular shape. The fifth flow path 310 and the sixth flow path 320 may pass through the first electrode 210b, so that the third purge gas can be injected into the third region 30. The third gas injection unit 300 may include a third purge gas supply source (not shown) that injects the third purge gas. The third gas injection unit 300 may include a third electrode unit 230, and the third purge gas may pass through the area between the first electrode 210b and the second electrode 220b having a potential difference and may be injected into the third region 30 in a plasma state. The third purge gas may be injected into the third region 30 via one of the fifth flow path 310 and the sixth flow path 320, or the third purge gas may be injected only via one of the fifth flow path 310 and the sixth flow path 320. The third gas injection unit 300 may allow the third purge gas to pass through the region between the first electrode 210 b and the second electrode 220 b having a potential difference, and thus, the third purge gas may be injected into the third region 30 in a plasma state. The third gas injection unit 300 may convert the third purge gas into plasma and inject the third purge gas into the third region 30 in a plasma state. The first purge gas, the reaction gas, the second purge gas, or the third purge gas may be connected to a remote plasma generating device (not shown).

[0077] The first RF power source 702 and the ground may be connected to the second electrode unit 220 connected to the second gas injection unit 200 of the second region 20 , and the first RF power source 702 or the ground may be selectively connected to the first electrode 210 a or the second electrode 220 a of the second electrode unit 220 .

[0078] The second RF power source 704 and the ground may be connected to the first electrode unit 210 of the first gas injection unit 100 connected to the first region 10 , and the second RF power source 704 or the ground may be selectively connected to the first electrode 210 c or the second electrode 220 c of the first electrode unit 210 .

[0079] The third RF power source 706 and the ground may be connected to the third electrode unit 230 of the third gas injection unit 300 connected to the third region 30 , and the third RF power source 706 or the ground may be selectively connected to the first electrode 210 b or the second electrode 220 b of the third electrode unit 230 .

[0080] One or more protruding electrodes (not shown) may be formed in the first electrode 210 c of the first region 10 , the first electrode 210 a of the second region 20 , and the first electrode 210 b of the third region 30 in a direction toward the substrate supporting unit 600 .

[0081] The second gas injection unit 200 may be connected to a remote plasma device (not shown) outside the chamber. Thus, the second gas injection unit 200 may inject ionized gas or radicals into the first region 10 and the second region 20.

[0082] refer to Figure 3 , the third gas injection unit 300 injects the purge gas into the third region 30. The third gas injection unit 300 may divide the third region 30 into a first zone 302, a second zone 304, and a third zone 306, and may inject the purge gas into the third region 30.

[0083] The third purge gas may be injected as a plasma gas into the first zone 302, the second zone 304, and the third zone 306. The third zone 306 may be disposed at the center of the lid and may be injected with a center purge gas.

[0084] The third gas injection unit 300 may be connected to a remote plasma device (not shown) to inject ionized gas or radicals.

[0085] The source gas injected into the first region 10 from the first gas injection unit 100 may include titanium group elements (Ti, Zr, Hf, etc.), silicon (Si), or aluminum (Al). For example, the source gas SG containing titanium (Ti) may be titanium tetrachloride (TiCl4) gas, etc. In addition, the source gas SG containing silicon (Si) may be silane (SiH4) gas, disilane (Si2H6) gas, trisilane (Si3H8) gas, tetraethyl orthosilicate (TEOS) gas, dichlorosilane (DCS) gas, hexachlorosilane (HCD) gas, tris-dimethylaminosilane (TriDMAS) gas, trisilamine (TSA) gas, etc.

[0086] The reaction gas supplied from the second gas injection unit 200 to the second region 20 may include hydrogen (H2), nitrogen (N2), oxygen (O2), nitrous oxide (N2O) gas, ammonia (NH3), water vapor (H2O), or ozone (O3) gas. In this case, the reaction gas may be mixed with a purge gas including nitrogen (N2), argon (Ar), xenon (Ze), or helium (He).

[0087] In addition, the gas used to generate plasma in the first region 10, the second region 20 and the third region 30 may include hydrogen (H2), nitrogen (N2), a mixed gas of hydrogen (H2) and nitrogen (N2), oxygen (O2), nitrous oxide (N2O) gas, argon (Ar), helium (He) or ammonia (NH3).

[0088] The purge gas supplied to the first region 10, the second region 20, and the third region 30 may include nitrogen (N2), argon (Ar), xenon (Ze), or helium (He). The gas may be an inert gas.

[0089] The first gas injection unit 100 injects a purge gas into the first region 10. A first purge gas injection hole 530 may be installed in the first gas injection unit 100. A plasma purge gas may be injected into the first region 10 through the first electrode unit 210. Thus, the source gas may be adsorbed onto the substrate in the first region 10, and then, before the substrate support unit 600 rotates, the first purge gas injection hole 530 of the first electrode unit 210 may inject the plasma purge gas onto the substrate in the first region 10. That is, by using the plasma purge gas from the first purge gas injection hole 530, the source gas adsorbed on the substrate may be pre-treated. Thus, internal impurities of the source gas adsorbed on the substrate may be removed, thereby helping to improve the quality of the thin film deposited on the substrate.

[0090] A step of mounting each of the first substrate 601 and the second substrate 602 on a substrate supporting unit 600 disposed in the chamber may be performed such that the first substrate 601 is disposed in a first region 10 of a process space 1 of the chamber, and the second substrate 602 is disposed in a second region 20 of the process space 1 that is spatially separated from the first region 10. Subsequently, a source adsorption step of injecting a source gas from the first region 10 onto the first substrate 601 to adsorb the first source gas onto the first substrate 601 may be performed. A first rotation step of rotating the substrate supporting unit 600 may be performed such that the first substrate 601 having the first source gas adsorbed thereon is disposed in the second region 20. A thin film forming step of injecting a reaction gas onto the first substrate 601 and allowing the reaction gas to react with the first source gas adsorbed on the first substrate 601 in the second region 20 to form a thin film may be performed, as well as a second rotation step of rotating the substrate supporting unit 600 to place the first substrate 601 having the thin film formed thereon in the first region 10. The source adsorption step, the first rotation step, the thin film forming step, and the second rotation step may be repeatedly performed a plurality of times until a thin film having a predetermined thickness is formed.

[0091] After the source adsorption step, a source purge step may be performed to inject a first purge gas to purge source gases that have not been adsorbed onto the first substrate 601 from the first region 10 and the first substrate 601, as well as from the internal patterns of the first substrate 601. After the thin film formation step, a reactive gas purge step may be performed to inject a second purge gas to purge reactive gases from the second region 20 and the first substrate 601, as well as from the internal patterns of the first substrate 601. One or more of the reactive gas and the second purge gas may be converted into plasma and injected. The first purge gas may be converted into plasma and injected. After the thin film formation step, a reactive gas purge step may be performed to inject the second purge gas and the reactive gas onto the first substrate 601. The first purge gas may be converted into plasma and injected, and one or more of the reactive gas and the second purge gas may be converted into plasma and injected. After the reactive gas purge step, a process gas injection step may be performed to inject a process gas to treat the thin film. Furthermore, the process gas may be converted into plasma and injected.

[0092] After the thin film forming step, a reaction gas purge step of purging the reaction gas onto the first substrate 601 can be performed. After the reaction gas purge step, a processing gas injection step of injecting the processing gas for processing the thin film can be performed. The processing gas can be converted into plasma and injected, and one or more of the first purge gas, the reaction gas and the second purge gas can be converted into plasma and injected.

[0093] Plasma can be generated by injecting a first purge gas, a reaction gas, a second purge gas, a third purge gas, or a process gas into each region between the first electrodes 210c, 210a, and 230c and the second electrodes 220c, 220a, and 230b. The third purge gas can be injected during the first rotation step or the second rotation step performed on the substrate support unit 600 to divide the first region into the second region. During the first rotation step or the second rotation step, the third purge gas can be injected to additionally purge the first source gas adsorbed on the first substrate 601 or to additionally purge the reaction gas formed on the first substrate 601, and the third purge gas can be converted into plasma and injected.

[0094] An operation of injecting a reaction gas onto the second substrate 602 in the second region 20 in the source adsorption step and an operation of injecting a source gas onto the second substrate 602 in the first region 10 in the thin film formation step may be further performed, and an operation of injecting a source gas onto the first substrate 601 in the first region 10 and an operation of injecting a reaction gas onto the second substrate 602 in the second region 20 may be performed simultaneously. An operation of injecting a reaction gas onto the second substrate 602 in the second region 20 in the source adsorption step and an operation of injecting a source gas onto the second substrate 602 in the first region 10 in the thin film formation step may be further performed, and an operation of injecting a reaction gas into the first substrate 601 in the second region 20 and an operation of injecting a source gas into the second substrate 602 in the first region 10 may be performed simultaneously.

[0095] A second purge gas may be injected into the second region 20. A second electrode unit 220 may be installed, and thus, the second purge gas may be plasma and may be injected into the second region 20. Therefore, in the second region 20, the source gas adsorbed onto the substrate may react with the reactive gas, and thus a thin film may be deposited by an atomic layer deposition (ALD) process. The second purge gas may then be a plasma gas, and post-processing may be performed thereon. Therefore, internal impurities of the thin film deposited on the substrate may be removed, thereby densifying the thin film deposited on the substrate. Therefore, the quality of the thin film deposited on the substrate may be further improved.

[0096] The substrate processing apparatus according to the present invention can stop the substrate in the first area 10 to adsorb the source gas thereon, rotate the substrate supporting unit 600 to rotate the substrate supporting unit 600 from the first area 10 to the second area 20, stop the substrate supporting unit 600 to deposit the reaction gas in the second area 20, and rotate the substrate supporting unit 600 to repeat moving the substrate to the first area 10 via the second area 20. Through such a process, the substrate processing apparatus according to the present invention can perform a process on the substrate.

[0097] In this case, the substrate supporting unit 600 may be rotated by a rotating unit (not shown). A process of rotating the substrate supporting unit 600 by using the rotating unit will be described below.

[0098] First, when the first and second substrates 601 and 602 are placed in the first and second regions 10 and 20, the rotation unit may stop the substrate support unit 600. Thus, an adsorption process may be performed to adsorb source gas onto the substrates in the first region 10 while the substrates are stopped. In this case, the first gas injection unit 100 may inject the source gas into the first region 10. With the substrate support unit 600 stopped, after the adsorption process has ceased, a first purge gas may be injected into the first region. The first purge gas may be a plasma purge gas. The plasma first purge gas may be used to pre-treat the source gas adsorbed on the first substrate 601. Subsequently, or simultaneously with this, the first purge gas may be used to purge or exhaust any unwanted source gas remaining in the first region 10 to the outside of the chamber.

[0099] When purging is completed or unnecessary source gas is exhausted, a rotation unit (not shown) may rotate the substrate support unit 600 so that the substrate moves from the first area 10 to the second area 20 via the third area 30, i.e., curtain purging. In this case, when the substrate passes through the first zone 302 of the third area 30, the rotation unit may continuously rotate the substrate support unit 600 without stopping the substrate support unit 600. When the first substrate 601 passes through the first zone 302, the first substrate 601 may be exposed to the purge gas or plasma purge gas.

[0100] Subsequently, when the substrate is placed in the second region 20, the rotation unit can stop the substrate support unit 600. Thus, while the substrate is stopped, a thin film deposition process based on a reaction between the source gas adsorbed onto the substrate and the reactive gas injected by the second gas injection unit 200 can be performed in the second region 20. The second gas injection unit 200 can activate the reactive gas using plasma and inject the activated reactive gas into the second region 20. In this case, the substrate processing apparatus according to the present invention can be implemented for low-temperature processing. For example, the substrate processing apparatus according to the present invention can be implemented for semiconductor high-K processes. The second gas injection unit 200 can inject the reactive gas into the second region 20 without activating the reactive gas. In this case, the substrate processing apparatus according to the present invention can be implemented for high-temperature processing. For example, the substrate processing apparatus according to the present invention can be implemented for semiconductor high-temperature nitridation processes. When the deposition process is complete, a second purge gas can be injected into the region 20, and the second purge gas can be a plasma purge gas. Plasma gas may be injected onto the deposited thin film on the first substrate 601 using a plasma second purge gas, and subsequently or simultaneously, unwanted reaction gas remaining in the second region 20 may be purged or exhausted to the outside of the chamber using the first purge gas. Subsequently, post-processing may be performed by injecting a process gas for removing impurities from the thin film onto the thin film on the first substrate 601 again.

[0101] When the deposition process and the treatment process are completed in a state where the substrate supporting unit 600 is stopped, the rotation unit may rotate the substrate supporting unit 600 so that the substrate moves from the second area 20 to the first area 10 via the second zone 304. In this case, when the substrate passes through the second zone 304, the rotation unit may continuously rotate the substrate supporting unit 600 without stopping the substrate supporting unit 600. When the first substrate 601 passes through the second zone 304, the first area 10 and the second area 20 may be divided by using the purge gas injected by the third gas injection unit 300, and according to circumstances, a plasma purge gas may be injected.

[0102] Furthermore, a treatment process can be performed on the substrate without using plasma in all of the first region 10 and the second region 20. A high-temperature process can be achieved by performing a heat treatment in the second region 20. In this case, the high-temperature process and the injection of the reaction gas can be performed alternately in the second region 20. Therefore, step coverage of high-dielectric materials and the like can be improved. Furthermore, the present invention can be implemented by alternately performing the high-temperature process and the ALD process, thereby increasing the thickness of the thin film more than when the thin film is deposited only by the ALD process.

[0103] Those skilled in the art will appreciate that the present invention can be embodied in another specific form without changing its technical spirit or essential features. Therefore, it should be understood that the above-mentioned embodiments are illustrative in all aspects and not restrictive. It should be understood that the scope of the present invention is defined by the following claims rather than by the specific description, and that the meaning and scope of the claims and all variations or modifications inferred from their equivalent concepts are included within the scope of the present invention.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: chamber; a substrate supporting unit at which one or more substrates are mounted in a process space of the chamber, the substrate supporting unit being rotatably mounted; a first gas injection unit, configured to inject a source gas and a first purge gas into a first region of the process space, wherein the first purge gas is configured to purge the source gas; a source gas supply source for supplying the source gas to the first gas injection unit; a first purge gas supply source, configured to supply the first purge gas to the first gas injection unit; a second gas injection unit, configured to inject a reaction gas and a second purge gas into a second region of the process space that is spatially separated from the first region, the reaction gas being used to react with the source gas, and the second purge gas being used to purge the reaction gas; a reaction gas supply source, configured to supply the reaction gas to the second gas injection unit; a second purge gas supply source for supplying the second purge gas to the second gas injection unit; a third gas injection unit, configured to inject a third purge gas into a third region between the first region and the second region; as well as a third purge gas supply source, configured to supply the third purge gas into the third gas injection unit; in, The first gas injection unit injects the source gas into the first region to adsorb the source gas onto the substrate, and then injects the first purge gas into the first region to purge the source gas. The second gas injection unit injects the reaction gas into the second region to deposit a thin film on the substrate, and then injects the second purge gas into the second region to purge the reaction gas. The third gas injection unit injects the third purge gas into the third region to divide the process space into the first region and the second region. wherein the first purge gas purges the source gas remaining in the first region, The second purge gas purges the reaction gas remaining in the second region. wherein the first gas injection unit comprises a first electrode unit, wherein the second gas injection unit comprises a second electrode unit, Wherein, each of the first electrode unit and the second electrode unit includes a first electrode and a second electrode, wherein the first electrode of the first gas injection unit has a first flow path for the source gas and a second flow path for the first purge gas inside, and The first electrode of the second gas injection unit has a third flow path for the reaction gas and a fourth flow path for the second purge gas inside.

2. The apparatus according to claim 1, wherein the first gas injection unit comprises: a plurality of source gas injection holes for injecting the source gas; as well as A plurality of first purge gas injection holes are used to inject the first purge gas.

3. The apparatus according to claim 1, wherein the second gas injection unit comprises: a plurality of reaction gas injection holes for injecting the reaction gas; as well as A plurality of second purge gas injection holes are used to inject the second purge gas.

4. The device according to claim 3, wherein The second gas injection unit injects one or more of the reaction gas and the second purge gas as plasma.

5. The device according to claim 4, wherein The second electrode unit is used to convert the reaction gas or the second purge gas into plasma.

6. The device according to claim 2, wherein The first gas injection unit injects the first purge gas as plasma.

7. The device according to claim 6, wherein The first electrode unit is configured to convert the first purge gas into plasma.

8. The device according to claim 2, wherein The second gas injection unit includes a plurality of reaction gas injection holes for injecting the reaction gas and a plurality of second purge gas injection holes for injecting the second purge gas. The second gas injection unit sequentially injects the source gas, the first purge gas, the reaction gas, and the second purge gas, the second gas injection unit injects the first purge gas as plasma, and The second gas injection unit injects one or more of the reaction gas and the second purge gas as plasma.

9. The device according to claim 3, wherein The second gas injection unit further includes a process gas supply source connected to one of the reaction gas injection hole and the second purge gas injection hole.

10. The device according to claim 9, wherein The second gas injection unit injects the second purge gas and then injects the process gas as plasma.

11. The device according to claim 2, wherein the second gas injection unit including a plurality of reaction gas injection holes for injecting the reaction gas, a plurality of second purge gas injection holes for injecting the second purge gas, and a process gas supply source connected to one of the reaction gas injection holes and the second purge gas injection holes, The second gas injection unit sequentially injects the source gas, the first purge gas, the reaction gas, the second purge gas, and the process gas, the second gas injection unit injects the process gas as plasma, and The second gas injection unit injects one or more of the reaction gas and the second purge gas as plasma.

12. The device according to claim 5 or 7, wherein The first electrode and the second electrode of each of the first electrode unit and the second electrode unit have a potential difference therebetween, and Plasma is generated by injecting one of the first purge gas, the reaction gas, and the second purge gas into a region between the first electrode and the second electrode.

13. The device according to claim 1, wherein The third purge gas is injected in a plasma state.

14. The device according to claim 13, wherein The third gas injection unit includes a third electrode unit for converting the third purge gas into plasma.

15. The device according to claim 14, wherein The third electrode unit is configured with a first electrode and a second electrode, with a potential difference between the first electrode and the second electrode, and Plasma is generated by injecting the third purge gas into a region between the first electrode and the second electrode.

16. The apparatus of claim 4, 6, 8, 10, 11 or 13, wherein: One of the first purge gas, the reaction gas, and the second purge gas is connected to a remote plasma generation device.

17. A method for processing a substrate, the method comprising: a step of mounting each of a first substrate and a second substrate on a substrate supporting unit provided in a chamber such that the first substrate is provided in a first region of a process space of the chamber and the second substrate is provided in a second region of the process space that is spatially separated from the first region; a source adsorption step of injecting a source gas onto the first substrate in the first region to adsorb the first source gas onto the first substrate; a source purging step of injecting a first purge gas onto the first substrate, wherein the source adsorption step and the source purging step are sequentially performed by a first gas injection unit in the first region; a first rotating step of rotating the substrate supporting unit so that the first substrate on which the first source gas is adsorbed is disposed in the second region; a thin film forming step of injecting a reaction gas onto the first substrate in the second region to form a thin film by a reaction between the reaction gas and the first source gas adsorbed on the first substrate; a reaction gas purging step of injecting a second purge gas onto the first substrate, wherein the thin film forming step and the reaction gas purging step are sequentially performed by a second gas injection unit in the second region; as well as a second rotating step of rotating the substrate supporting unit so that the first substrate on which the thin film is formed is disposed in the first area, in, In the first rotating step or the second rotating step, a third purge gas is injected to divide the first area and the second area, wherein a thin film having a predetermined thickness is formed by repeating the source adsorption step, the first rotation step, the thin film formation step, and the second rotation step multiple times, The source purge step involves purging the source gas remaining in the first region by using the first purge gas. The reaction gas purging step is to purge the reaction gas remaining in the second region by using the second purge gas. Wherein, the first gas injection unit includes a first electrode unit, Wherein, the second gas injection unit includes a second electrode unit, Wherein, each of the first electrode unit and the second electrode unit includes a first electrode and a second electrode, wherein the first electrode of the first gas injection unit has a first flow path for the source gas and a second flow path for the first purge gas inside, and The first electrode of the second gas injection unit has a third flow path for the reaction gas and a fourth flow path for the second purge gas inside.

18. The method according to claim 17, wherein One or more of the reaction gas and the second purge gas are generated and injected as plasma.

19. The method according to claim 17, wherein The first purge gas is generated and injected as a plasma.

20. The method according to claim 17, wherein the first purge gas is generated and injected as a plasma, and One or more of the reaction gas and the second purge gas are generated and injected as plasma.

21. The method according to claim 17, comprising a process gas injection step of injecting a process gas for performing a process on the thin film after the reaction gas purge step.

22. The method according to claim 21, wherein The process gas is generated and injected as a plasma.

23. The method of claim 17, comprising: a process gas injection step of injecting a process gas for performing a process on the thin film after the reaction gas purge step, in The process gas is generated and injected as a plasma, and One or more of the first purge gas, the reaction gas, and the second purge gas are generated and injected as plasma.

24. The method of claim 23, comprising providing: a first electrode unit disposed in the first region; and A second electrode unit is provided in the second region, in Each of the first electrode unit and the second electrode unit is configured with a first electrode and a second electrode, the first electrode and the second electrode having a potential difference therebetween, and Plasma is generated by injecting one of a first purge gas, a reaction gas, a second purge gas, and a process gas into a region between the first electrode and the second electrode.

25. The method according to claim 17, wherein The third purge gas is generated and injected as plasma.

26. The method according to claim 17, wherein injecting a reaction gas onto the second substrate in the second region in the source adsorption step; as well as injecting a source gas onto the second substrate in the first region in the thin film forming step, Injecting the source gas onto the first substrate in the first region and injecting the reaction gas onto the second substrate in the second region are performed simultaneously.

27. The method according to claim 17, wherein injecting a reaction gas onto the second substrate in the second region in the source adsorption step, injecting a source gas onto the second substrate in the first region in the thin film forming step, Injecting the reaction gas onto the first substrate in the second region and injecting the source gas onto the second substrate in the first region are performed simultaneously.

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