Joining device and joining method

Abstract

A bonding device bonds a first substrate and a second substrate to form a superimposed substrate. The first substrate includes a base substrate and a device layer formed on a surface of the base substrate facing the second substrate. The bonding device comprises: a first holding portion that holds the first substrate; a second holding portion that holds the second substrate; a moving portion that moves the first and second holding portions relative to each other; and a total thickness measurement control portion that controls a thickness detector for measuring the total thickness of the superimposed substrate to measure the total thickness at multiple points.

Description

Technical Field

[0001] The present disclosure relates to a joining device and a joining method. Background Art

[0002] Patent Document 1 describes a method for grinding an upper plate-like workpiece attached to a lower plate-like workpiece. The method includes the following steps: while the lower surface of the lower plate-like workpiece is held by a holding table, measuring the thickness of the lower plate-like workpiece at at least three measurement locations; adjusting the parallelism between the upper surface of the lower plate-like workpiece and the lower surface of a grinding stone based on the measurement results; and, after the parallelism is adjusted, grinding the upper plate-like workpiece.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2014-226749 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] One embodiment of the present disclosure provides a technology capable of improving the positioning accuracy of a point for measuring the total thickness when measuring the total thickness of a superimposed substrate including a first substrate and a second substrate bonded to the first substrate.

[0008] Solutions for solving problems

[0009] A bonding device according to one embodiment of the present disclosure bonds a first substrate to a second substrate to obtain a superimposed substrate. The first substrate includes a base substrate and a device layer, the device layer being formed on a surface of the base substrate facing the second substrate. The bonding device comprises: a first holding portion that holds the first substrate; a second holding portion that holds the second substrate; a moving portion that moves the first holding portion and the second holding portion relative to each other; and a total thickness measurement control portion that controls a thickness detector for measuring the total thickness of the superimposed substrate to measure the total thickness at multiple points.

[0010] Effects of the Invention

[0011] According to one embodiment of the present disclosure, when measuring the total thickness of a superimposed substrate including a first substrate and a second substrate bonded to the first substrate, the positioning accuracy of a point for measuring the total thickness can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 (A) is a cross-sectional view showing an example of a superimposed substrate before grinding. Figure 1(B) is a cross-sectional view showing an example of the laminated substrate after grinding.

[0013] Figure 2 (A) is a cross-sectional view showing an example of the base thickness before grinding and the remaining thickness. Figure 2 (B) is a cross-sectional view showing an example of the base thickness after grinding and the remaining thickness.

[0014] Figure 3 This is a diagram showing the components of a control unit of a welding device and a control unit of a grinding device according to one embodiment using functional blocks.

[0015] Figure 4 It is a side view showing a bonding apparatus according to one embodiment.

[0016] Figure 5 (A) is a cross-sectional view showing an example of position alignment, Figure 5 (B) is a cross-sectional view showing an example of the start of bonding. Figure 5 (C) is a cross-sectional view showing an example of completed bonding.

[0017] Figure 6 This is a flowchart showing a joining method according to one embodiment.

[0018] Figure 7 (A) is a side view showing an example of a target image. Figure 7 (B) is a side view showing an example of imaging of an alignment mark. Figure 7 (C) is a side view showing an example of position alignment.

[0019] Figure 8 (A) is a side view showing an example of measuring the height of the upper surface of the second holding portion, Figure 8 (B) is a side view showing an example of measuring the height of the upper surface of the superimposed substrates.

[0020] Figure 9 (A) is a side view showing a modified example of measuring the height of the upper surface of the second holding portion, Figure 9 (B) is a side view showing a modified example of measuring the height of the upper surface of the superimposed substrates.

[0021] Figure 10 It is a plan view showing an example of the arrangement of points for measuring the total thickness.

[0022] Figure 11 It is a plan view showing a modified example of the arrangement of points for measuring the total thickness.

[0023] Figure 12 This is a side view showing an example of measurement of substrate thickness.

[0024] Figure 13 It is a top view showing a grinding device according to one embodiment.

[0025] Figure 14 Yes Figure 13 A side view of an example of a grinding unit.

[0026] Figure 15 Yes Figure 14 A top view of an example of a grindstone track.

[0027] Figure 16 It is a side view showing an example of an inclination angle adjustment unit of a grinding device.

[0028] Figure 17 (A) is a side view showing an example of an inclination angle when the thickness of the superimposed substrates is uniform in the radial direction. Figure 17 (B) is a side view showing an example of an inclination angle when the remaining thickness increases from the center to the periphery of the superimposed substrate. Figure 17 (C) is a side view showing an example of an inclination angle when the thickness of the remaining substrate decreases from the center toward the periphery.

[0029] Figure 18 This is a flowchart showing a grinding method according to one embodiment.

[0030] Figure 19 This is a diagram showing the configuration of a control unit of a welding device and a control unit of a grinding device according to a first modification using functional blocks.

[0031] Figure 20 This is a flowchart showing a joining method according to the first modification.

[0032] Figure 21 (A) is a side view showing an example of measuring the position of the upper surface of the second holding portion, Figure 21 (B) is a side view showing an example of position measurement of the upper surface of the second substrate.

[0033] Figure 22 This is a diagram showing the components of a control unit of a welding device and a control unit of a grinding device according to a second modification example using functional blocks.

[0034] Figure 23 This is a diagram showing the components of a control unit of a welding device and a control unit of a grinding device according to a third modification example using functional blocks.

[0035] Figure 24 It is a plan view showing a grinding device according to a third modified example. DETAILED DESCRIPTION

[0036] The following describes embodiments of the present disclosure with reference to the accompanying drawings. Identical or corresponding structures in the various drawings are denoted by the same reference numerals, and descriptions thereof may be omitted. In this specification, the X-axis, Y-axis, and Z-axis are mutually perpendicular directions. The X-axis and Y-axis are horizontal, and the Z-axis is vertical.

[0037] Developed a technology such as Figure 1 As shown in (A), the first substrate W1 and the second substrate W2 are bonded to produce a superimposed substrate T, and then, as shown in FIG. Figure 1 As shown in (B), the base substrate B1 of the first substrate W1 is ground and thinned.

[0038] like Figure 1 As shown in (A), the first substrate W1 includes a base substrate B1 to be ground, and a device layer D1 formed on the surface of base substrate B1 facing the second substrate W2. Base substrate B1 can be, for example, a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, or a glass substrate. Device layer D1 includes electronic circuits and a metal layer.

[0039] The first substrate W1 may further include a bonding layer F1 formed on the surface of the device layer D1 facing the second substrate W2. The bonding layer F1 is formed of SiO2, SiC, SiCN, or an adhesive. SiO2 is formed using, for example, TEOS (tetraethoxysilane).

[0040] Meanwhile, the second substrate W2 includes a base substrate B2 and a device layer D2 formed on the surface of base substrate B2 facing the first substrate W1. Base substrate B2 may be, for example, a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, or a glass substrate. Device layer D2 includes electronic circuitry and a metal layer.

[0041] The second substrate W2 may further include a bonding layer F2 formed on the surface of the device layer D2 facing the first substrate W1. The bonding layer F2 is formed of SiO2, SiC, SiCN, or an adhesive. SiO2 is formed using, for example, TEOS (tetraethoxysilane).

[0042] Furthermore, the second substrate W2 may not include the device layer D2. In this case, the bonding layer F2 is formed on the surface of the base substrate B2 facing the first substrate W1. The bonding layers F1 and F2 may have any desired structure, and may also be absent. As long as the surface of the device layer D1 is activated, the first and second substrates W1 and W2 can be bonded even without the bonding layers F1 and F2.

[0043] The total thickness HT of the superposed substrate T is equal to the sum of the thickness HB of the base substrate B1 of the first substrate W1 and the thickness HR of the remaining portion R of the superposed substrate T excluding the base substrate B1. Hereinafter, the thickness HB of the base substrate B1 is also referred to as the base thickness HB. Furthermore, the thickness HR of the remaining portion R is also referred to as the remaining thickness HR.

[0044] The remaining thickness HR tends to be uniform in the circumferential direction of the superimposed substrate T and non-uniform in the radial direction of the superimposed substrate T. For example, Figure 2 As shown in (A), the remaining thickness HR gradually decreases from the center of the superimposed substrate T toward the periphery.

[0045] In addition, the remaining thickness HR sometimes gradually increases from the center to the periphery of the superimposed substrate T. In addition, the remaining thickness HR sometimes gradually decreases or increases from the center and the periphery of the superimposed substrate T to a point midway between the center and the periphery of the superimposed substrate T.

[0046] In such Figure 2 When the remaining thickness HR of the overlapped substrate T is uneven as shown in (A), Figure 2 When the upper surface of the superposed substrate T is ground parallel to the lower surface of the superposed substrate T as shown in (B), the deviation of the base thickness HB (TTV: Total Thickness Variation) increases. In order to grind the base substrate B1 so that the deviation of the base thickness HB after grinding is as small as possible, the remaining thickness HR can be measured at multiple points.

[0047] However, as a method for measuring the remaining thickness HR, it is not possible to use a method that irradiates light from above the superposed substrate T and measures the phase difference between the light reflected from the upper surface of the remaining portion R and the light reflected from the lower surface of the remaining portion R. This is because the infrared light or other light used for phase difference measurement cannot penetrate the device layer D1 including the metal layer. The same applies when irradiating light from below the superposed substrate T.

[0048] Therefore, in this embodiment, the remaining thickness HR is measured by measuring the total thickness HT and the base thickness HB and calculating the difference between the total thickness HT and the base thickness HB (HT-HB=HR). Even when the superposed substrate T includes the device layer D1, the remaining thickness HR can be measured, and the base substrate B1 can be ground to minimize the variation in the base thickness HB after grinding.

[0049] As described above, when the method of calculating the difference between the total thickness HT and the base thickness HB (HT-HB=HR) is adopted as the method for measuring the remaining thickness HR, if both HT and HB are measured at the same point within the surface of the superimposed substrate T, HR can be calculated with higher accuracy than when HT and HB are measured at different points within the surface of the superimposed substrate T. This is because, as described above, HR varies depending on the location.

[0050] If both the total thickness HT and the base thickness HB are measured at the same point, the distribution of the remaining thickness HR can be calculated with high accuracy. Therefore, the positioning accuracy of the point where the total thickness HT is measured is crucial. This positioning accuracy is determined by the relative positional control of the holding unit that holds the superimposed substrates T and the thickness detector that measures the total thickness HT.

[0051] Therefore, in this embodiment, the total thickness HT is measured by the bonding apparatus 100. Compared with the grinding apparatus 200, the bonding apparatus 100 requires high-precision position control. This is because the bonding apparatus 100 aligns the first substrate W1 and the second substrate W2 before bonding them.

[0052] Compared with the grinding device 200, the bonding device 100 requires high-precision position control, so the moving part 130 (see Figure 4 ) has a motor with high responsiveness to position commands and high position resolution. In some cases, a device for absorbing vibration is installed in the bonding device 100 instead of or in addition to such a high-performance motor.

[0053] In this embodiment, the total thickness HT is measured using the bonding apparatus 100. Therefore, the positioning accuracy of the point at which the total thickness HT is measured can be improved compared to when the total thickness HT is measured using the grinding apparatus 200. As a result, the distribution of the remaining thickness HR can be calculated with high accuracy, thereby reliably reducing variations in the base thickness HB after grinding.

[0054] like Figure 3 As shown, the control unit 180 of the bonding apparatus 100 and the control unit 280 of the grinding apparatus 200 transmit and receive data via the network NT. The data measured by the bonding apparatus 100 is transmitted to the grinding apparatus 200 and used for grinding the superimposed substrates T.

[0055] Alternatively, a server S may be connected to the network NT, and the control unit 180 of the joining apparatus 100 and the control unit 280 of the grinding apparatus 200 may transmit and receive data via the server S.

[0056] Since data can be temporarily stored in the server S, the load on the control units 180 and 280 can be reduced. The control unit 180 of the welding apparatus 100 can transmit data between welding operations, and the control unit 280 of the grinding apparatus 200 can receive data between grinding operations.

[0057] The server S may be a host computer that sends commands to the control unit 180 of the welding apparatus 100 and the control unit 280 of the grinding apparatus 200. The control unit 180 of the welding apparatus 100 and the control unit 280 of the grinding apparatus 200 each execute a process according to the command from the host computer.

[0058] Explained later Figure 3 In addition, Figure 3 The functional blocks shown are conceptual and may not necessarily be physically configured as shown. All or part of the functional blocks can be functionally or physically dispersed / combined in arbitrary units. All or any part of the processing functions performed by the functional blocks can be implemented by a program executed by the CPU or implemented as hardware based on wiring logic. Figure 19 、 Figure 22 as well as Figure 23 It is the same in.

[0059] Next, refer to Figure 5 The bonding apparatus 100 is described below. The bonding apparatus 100 includes a first holding portion 110 that holds a first substrate W1 , a second holding portion 120 that holds a second substrate W2 , and a moving portion 130 that moves the first holding portion 110 and the second holding portion 120 relative to each other.

[0060] The first holding portion 110 holds the first substrate W1 horizontally from above, with its bonding surface W1a facing downward. The first holding portion 110 has a holding surface 111 on its lower surface for holding the first substrate W1. The first holding portion 110 is, for example, a vacuum chuck, and has suction holes 112 on the holding surface 111 for sucking the first substrate W1.

[0061] The first holding portion 110 is, for example, a pin suction cup, and includes ribs 113 and pins 114 on a holding surface 111. The ribs 113 are, for example, annular, and radially divide the holding surface 111 into multiple zones. The vacuum level and suction force can be independently controlled for each of the multiple zones. Multiple pins 114 are dispersed within each of the multiple zones.

[0062] The second holding portion 120 holds the second substrate W2 horizontally from below, with its bonding surface W2a facing upward. The second holding portion 120 has a holding surface 121 on its upper surface for holding the second substrate W2. The second holding portion 120 is, for example, a vacuum chuck, and has suction holes 122 on the holding surface 121 for sucking the second substrate W2.

[0063] The second holding portion 120 is, for example, a pin suction cup, and includes ribs 123 and pins 124 on a holding surface 121. The ribs 123 are, for example, annular, and radially divide the holding surface 121 into multiple zones. The vacuum level and suction force can be independently controlled for each of the multiple zones. Multiple pins 124 are dispersed throughout each of the multiple zones.

[0064] The moving portion 130 is, for example, an XYZ stage, and moves the second holding portion 120 in the X-axis direction, the Y-axis direction, and the Z-axis direction. Furthermore, the moving portion 130 of this embodiment moves the second holding portion 120, but may also move the first holding portion 110, or may move both the first holding portion 110 and the second holding portion 120.

[0065] The bonding apparatus 100 may further include a rotating portion 131 in addition to the moving portion 130. The rotating portion 131 rotates the second holding portion 120 about a vertical rotation centerline. The rotating portion 131 and the moving portion 130 constitute an XYZθ stage. While the rotating portion 131 in this embodiment rotates the second holding portion 120, it may also rotate the first holding portion 110, or both the first holding portion 110 and the second holding portion 120. Any method is sufficient as long as alignment of the first substrate W1 and the second substrate W2 can be performed.

[0066] like Figure 4 As shown, the bonding apparatus 100 includes a first imaging unit 141 fixed to the first holding unit 110 and a second imaging unit 142 fixed to the second holding unit 120. The first imaging unit 141 captures an image of the bonding surface W2a of the second substrate W2 held by the second holding unit 120. Meanwhile, the second imaging unit 142 captures an image of the bonding surface W1a of the first substrate W1 held by the first holding unit 110.

[0067] The bonding apparatus 100 includes a thickness detector 151 for measuring the total thickness HT of the superimposed substrates T. When the second holding unit 120 holds the superimposed substrates T, the thickness detector 151 is fixed relative to the first holding unit 110. When the moving unit 130 moves the first holding unit 110 and the second holding unit 120 relative to each other, the position of the point at which the total thickness HT is measured changes. Furthermore, when the rotating unit 131 rotates the first holding unit 110 or the second holding unit 120, the position of the point at which the total thickness HT is measured changes.

[0068] The thickness detector 151 is, for example, a height sensor that measures the height of the top surface of an object. In this embodiment, the height sensor is non-contact, but it may also be a contact type. In this embodiment, there is one thickness detector 151, but it may also be multiple. Since the total thickness HT is measured at multiple points, a greater number of thickness detectors 151 can shorten the measurement time.

[0069] The bonding apparatus 100 includes a thickness detector 152 for measuring substrate thickness HB. When the second holding unit 120 holds the superimposed substrates T, the thickness detector 152 is fixed relative to the first holding unit 110. When the moving unit 130 moves the first holding unit 110 and the second holding unit 120 relative to each other, the position of the point at which the substrate thickness HB is measured changes. Furthermore, when the rotating unit 131 rotates the first holding unit 110 or the second holding unit 120, the position of the point at which the substrate thickness HB is measured changes.

[0070] The thickness detector 152 irradiates light from above the base substrate B1, for example, and measures the base thickness HB based on the phase difference between the light reflected from the upper surface of the base substrate B1 and the light reflected from the lower surface of the base substrate B1. When the base substrate B1 is a silicon wafer, infrared light is used. A portion of the infrared light passes through the silicon wafer and is reflected at the interface between the silicon wafer and the device layer D1. In this embodiment, the number of thickness detectors 152 is one, but it can also be multiple. The number of points for measuring the base thickness HB is multiple, so the greater the number of thickness detectors 152, the shorter the time required for measurement.

[0071] The bonding device 100 includes a pressing portion 160 for deforming the first substrate W1 held by the first holding portion 110. Figure 5 As shown in (B), the pressing portion 160 presses the center of the first substrate W1 from above. The bonding surface W1a of the first substrate W1 deforms downward into a convex surface, gradually bonding with the bonding surface W2a of the second substrate W2 as it moves from the center to the periphery, and finally returns to a flat surface.

[0072] The pressing portion 160 includes a pressing pin 161, an actuator 162, and a lifting mechanism 163. The pressing pin 161 is disposed in a through-hole that vertically penetrates the center of the first holding portion 110. The actuator 162, for example, uses air supplied from an electric air pressure regulator to press the pressing pin 161 downward with a constant force. The lifting mechanism 163 is fixed to the first holding portion 110 and raises and lowers the actuator 162.

[0073] like Figure 4As shown, the bonding apparatus 100 includes a control unit 180 for controlling the operation of the bonding apparatus 100. The control unit 180 is, for example, a computer and includes a CPU (Central Processing Unit) 181 and a storage medium 182 such as a memory. The storage medium 182 stores programs for controlling various processes performed in the bonding apparatus 100. The control unit 180 controls the operation of the bonding apparatus 100 by causing the CPU 181 to execute the programs stored in the storage medium 182.

[0074] like Figure 3 As shown, the control unit 180 includes, for example, a total thickness measurement control unit 183, a total thickness storage unit 184, a base thickness measurement control unit 185, a base thickness storage unit 186, a remaining thickness calculation unit 187, a remaining thickness storage unit 188, and a remaining thickness transmission unit 189. The total thickness measurement control unit 183 controls the thickness detector 151 to measure the thickness of the substrate at a plurality of points P (see FIG. Figure 10 ) The total thickness HT is measured. The method for measuring the total thickness HT will be described later.

[0075] The total thickness storage unit 184 stores data measured by the total thickness measurement control unit 183. For example, the total thickness storage unit 184 stores the total thickness HT in association with the position of the point P at which the total thickness HT was measured. Temporarily storing data such as the total thickness HT allows calculation of the remaining thickness HR to be performed at any time.

[0076] The base thickness measurement control unit 185 controls the thickness detector 152 to measure the base thickness HB at a plurality of points P. The point P at which the base thickness HB is measured and the point P at which the total thickness HT is measured overlap with the same point within the surface of the substrate T. By calculating the difference between the total thickness HT and the base thickness HB measured at the same point P, the remaining thickness HR can be accurately measured.

[0077] The base thickness storage unit 186 stores data measured by the base thickness measurement control unit 185. For example, the base thickness storage unit 186 stores the base thickness HB in association with the position of the point P at which the base thickness HB was measured. Temporarily storing data such as the base thickness HB allows calculation of the remaining thickness HR to be performed at any time.

[0078] The remaining thickness calculation unit 187 calculates the thickness HR of the remaining portion R of the superimposed substrate T, excluding the base substrate B1, at a plurality of points P based on the data measured by the total thickness measurement control unit 183 and the data measured by the base thickness measurement control unit 185. The remaining thickness HR is obtained by calculating the difference between the total thickness HT measured at the same point P within the surface of the superimposed substrate T and the base thickness HB.

[0079] The remaining thickness storage unit 188 stores the data calculated by the remaining thickness calculation unit 187. For example, the remaining thickness storage unit 188 stores the remaining thickness HR in association with the position of the point P at which the remaining thickness HR was measured. Temporarily storing data such as the remaining thickness HR allows the data to be transmitted at any time.

[0080] The remaining thickness transmitting unit 189 transmits the data calculated by the remaining thickness calculating unit 187 to the outside of the bonding apparatus 100. For example, the remaining thickness transmitting unit 189 transmits data including the remaining thickness HR and the positions of the plurality of points P at which the remaining thickness HR was measured to the grinding apparatus 200. The remaining thickness transmitting unit 189 can transmit the remaining thickness HR and other data to the grinding apparatus 200 via the server S.

[0081] Next, refer to Figure 6 The operation of the bonding device 100 will be described. Figure 6 Each of the steps shown is performed under the control of the control unit 180 of the bonding apparatus 100 .

[0082] First, in Figure 6 In S101, a transport device (not shown) carries the first substrate W1 into the bonding apparatus 100 and hands the first substrate W1 to the first holding unit 110. The first holding unit 110 holds the first substrate W1 from above with its bonding surface W1a facing downward.

[0083] Then, in Figure 6 In S102, the transport device carries the second substrate W2 into the bonding device 100 and hands the second substrate W2 to the second holding unit 120. The second holding unit 120 holds the second substrate W2 from below with the bonding surface W2a of the second substrate W2 facing upward.

[0084] In addition, the second holding portion 120 may have delivered the bonded superimposed substrate T to the conveying device before receiving the second substrate W2 from the conveying device. Figure 6 In the embodiment, S102 (carrying in the second substrate W2) is performed after S101 (carrying in the first substrate W1), but S101 may be performed after S102. The order of S101 and S102 is not particularly limited.

[0085] Then, in Figure 6 In S103, the control unit 180 controls the moving unit 130 to align the first substrate W1 and the second substrate W2. Figure 7 To illustrate Figure 6 S103.

[0086] First, if Figure 7As shown in (A), the horizontal positions of the first imaging unit 141 and the second imaging unit 142 are aligned. Specifically, the moving unit 130 moves the first holding unit 110 and the second holding unit 120 relative to each other in the horizontal direction so that the first imaging unit 141 and the second imaging unit 142 are located on the same vertical line. Furthermore, the moving unit 130 corrects the relative horizontal positions of the first holding unit 110 and the second holding unit 120 so that the first imaging unit 141 and the second imaging unit 142 capture a common target 143 and the horizontal positions of the first imaging unit 141 and the second imaging unit 142 are aligned.

[0087] Then, if Figure 7 As shown in (B), the moving part 130 moves the second holding part 120 from Figure 7 The position indicated by the dotted line in (B) is moved vertically upward so that the first holding portion 110 and the second holding portion 120 are relatively close to each other. Figure 7 The position of the second holding portion 120 indicated by the dotted line in (B) is Figure 7 The position of the second holding portion 120 is indicated by a solid line in (A).

[0088] Afterwards, if Figure 7 As indicated by the solid line in (B), the moving part 130 moves the first holding part 110 and the second holding part 120 relative to each other in the horizontal direction. In this way, the first camera 141 sequentially photographs the alignment marks M2a, M2b, and M2c on the bonding surface W2a of the second substrate W2. At the same time, the second camera 142 sequentially photographs the alignment marks M1c, M1b, and M1a on the bonding surface W1a of the first substrate W1. In addition, Figure 7 (B) shows a case where the first imaging unit 141 captures the alignment mark M2a on the bonding surface W2a of the second substrate W2 and the second imaging unit 142 captures the alignment mark M1c on the bonding surface W1a of the first substrate W1.

[0089] The first and second imaging units 141 and 142 transmit the captured image data to the control unit 180. The control unit 180 controls the moving unit 130 based on the captured image data to align the first and second substrates W1 and W2 in the horizontal direction.

[0090] like Figure 7 As shown by the dotted line in (C), the first substrate W1 and the second substrate W2 are horizontally aligned so that the alignment marks M1a, M1b, and M1c on the first substrate W1 overlap with the alignment marks M2a, M2b, and M2c on the second substrate W2 when viewed from the vertical direction. In addition to the moving unit 130, the rotating unit 131 can also be used for this alignment.

[0091] Then, if Figure 7 As indicated by the solid line in (C), the vertical position alignment of the first substrate W1 and the second substrate W2 is performed. Specifically, the second holding portion 120 is moved vertically upward by the moving portion 130, so that the second substrate W2 is brought closer to the first substrate W1. The gap between the bonding surface W1a of the first substrate W1 and the bonding surface W2a of the second substrate W2 is adjusted to a predetermined distance, for example, 50 μm to 200 μm.

[0092] Then, in Figure 6 In S104, the control unit 180 controls the pressing unit 160 to implement the bonding of the first substrate W1 and the second substrate W2. Figure 5 To illustrate Figure 6 S104.

[0093] like Figure 5 As shown in (A), when the alignment is completed, the first substrate W1 and the second substrate W2 are respectively flatly adsorbed. The gap G between the bonding surface W1a of the first substrate W1 and the bonding surface W2a of the second substrate W2 is, for example, 50 μm to 200 μm.

[0094] Then, if Figure 5 As shown in (B), the bonding apparatus 100 releases suction from the center of the first substrate W1 and presses the center of the first substrate W1 from above using the pressing portion 160. This brings the center of the first substrate W1 into contact with the center of the second substrate W2, and bonding begins. Subsequently, the first and second substrates W1 and W2 are gradually bonded from the center toward the periphery.

[0095] Finally, if Figure 5 As shown in (C), the bonding apparatus 100 releases suction on the periphery of the first substrate W1 while the center of the first substrate W1 is pressed against the center of the second substrate W2 by the pressing portion 160. As a result, the bonding surface W1a of the first substrate W1 and the bonding surface W2a of the second substrate W2 come into full contact, bonding the first and second substrates W1 and W2, thereby forming a superimposed substrate T. The superimposed substrate T is held by the second holding portion 120.

[0096] Then, in Figure 6 In S105 , the total thickness measurement control unit 183 controls the thickness detector 151 to measure the total thickness HT of the overlapping substrates T at a plurality of points P. Furthermore, the total thickness measurement control unit 183 controls the moving unit 130 or the rotating unit 131 to control the positions of the points P at which the total thickness HT is measured by the thickness detector 151 .

[0097] Compared to the grinding apparatus 200, the bonding apparatus 100 requires highly precise position control. Therefore, the moving portion 130 and the rotating portion 131 are equipped with motors that are highly responsive to position commands and have high position resolution. In some cases, a vibration-absorbing device is incorporated into the bonding apparatus 100 in place of or in addition to these high-performance motors. This is because the bonding apparatus 100 performs positional alignment between the first and second substrates W1, W2 before bonding them.

[0098] In this embodiment, the total thickness HT is measured using the bonding apparatus 10. This improves the positioning accuracy of the point P for measuring the total thickness HT compared to the case where the total thickness HT is measured using the grinding apparatus 200. Since the total thickness HT can be measured at the desired point P, the total thickness HT and the base thickness HB can be measured at the same point P within the plane of the superimposed substrates T. As a result, the distribution of the remaining thickness HR can be calculated with high precision, reliably reducing variations in the base thickness HB after grinding.

[0099] like Figure 8 As shown in (A), the total thickness measurement control unit 183 preliminarily exposes the holding surface 121 of the second holding unit 120 at a plurality of points P (refer to Figure 10 ) Measure the Z-axis direction position of the holding surface 121. Point P is the point for measuring the total thickness HT.

[0100] In addition, in this embodiment, the holding surface 121 is arranged horizontally, and the direction orthogonal to the holding surface 121 is the Z-axis direction. Hereinafter, the Z-axis direction position is also referred to as height.

[0101] The thickness detector 151 is, for example, a laser displacement meter that can measure the distance from the laser displacement meter to the holding surface 121 of the second holding unit 120 in a non-contact manner by irradiating laser light onto the holding surface 121 and receiving the reflected light.

[0102] The height of the holding surface 121 is measured before the second substrate W2 is loaded (S102). Alternatively, the height of the holding surface 121 may be measured after the superimposed substrate T is unloaded (S109). The height of the holding surface 121 can be measured as long as the holding surface 121 is exposed.

[0103] In addition, if Figure 8As shown in (B), the total thickness measurement control unit 183 measures the height of the surface Ta of the overlapping substrate T at a plurality of points P while the overlapping substrate T is held on the holding surface 121 of the second holding unit 120. The orientation of the surface Ta of the overlapping substrate T is opposite to the orientation of the back surface that is in contact with the second holding unit 120 (for example, upward). The height of the surface Ta of the overlapping substrate T and the height of the holding surface 121 of the second holding unit 120 are measured at the same plurality of points P. When viewed from the vertical direction, the point P at which the height of the surface Ta of the overlapping substrate T is measured and the point P at which the height of the holding surface 121 of the second holding unit 120 is measured are the same point.

[0104] Alternatively, the second holding unit 120 may be controlled to maintain the same X-axis, Y-axis, and Z-axis positions when measuring the height of the surface Ta of the superimposed substrate T and when measuring the height of the holding surface 121 of the second holding unit 120. In this case, the difference between the height of the surface Ta of the superimposed substrate T and the height of the holding surface 121 of the second holding unit 120 is equal to the total thickness HT of the superimposed substrate T. However, the thickness detector 151 may be moved instead of the second holding unit 120, or both the second holding unit 120 and the thickness detector 151 may be moved. Therefore, the height measurement of the holding surface 121 of the second holding unit 120 and the height measurement of the surface Ta of the superimposed substrate T can be performed while the relative positions (X-axis, Y-axis, and Z-axis positions) of the second holding unit 120 and the thickness detector 151 are the same. In this case, the difference between the height of the surface Ta of the superimposed substrate T and the height of the holding surface 121 of the second holding unit 120 is equal to the total thickness HT of the superimposed substrate T.

[0105] The total thickness measurement control unit 183 calculates the difference between the height Ta of the superimposed substrate T and the height of the holding surface 121 of the second holding unit 120 at the plurality of points P to calculate the total thickness HT at the plurality of points P. This calculation may be performed after the superimposed substrate T is unloaded ( S109 ).

[0106] According to this embodiment, the difference between the height Ta of the superposed substrate T and the height of the holding surface 121 of the second holding unit 120 at the same point P when viewed from the vertical direction is calculated. Therefore, even when the total thickness HT of the superposed substrate T is uneven, the total thickness HT can be measured with high accuracy. Compared to the case where the difference between the height Ta of the superposed substrate T and the height of the holding surface 121 of the second holding unit 120 is calculated at different points, the distribution of the total thickness HT of the superposed substrate T can be measured with high accuracy.

[0107] The total thickness storage unit 184 stores the total thickness HT measured by the total thickness measurement controller 183 in association with the position of the point P at which the total thickness HT was measured. Alternatively, the positions of multiple points P may be stored based on the position of a cutout indicating the crystal orientation of the first substrate W1 or the second substrate W2.

[0108] Furthermore, when measuring the height Ta of the surface Ta of the superimposed substrate T and when measuring the height of the holding surface 121 of the second holding unit 120, the second holding unit 120 can be controlled to maintain the same X-axis and Y-axis positions, and the second holding unit 120 can be displaced in the Z-axis direction. In this case, the total thickness HT of the superimposed substrate T is calculated by also taking into account the displacement of the second holding unit 120 in the Z-axis direction. However, instead of moving the second holding unit 120 in the X-axis and Y-axis directions, the thickness detector 151 can be moved in the X-axis and Y-axis directions, or one of the second holding unit 120 and the thickness detector 151 can be moved in the X-axis direction and the other in the Y-axis direction. Therefore, the height measurement of the holding surface 121 of the second holding unit 120 and the height measurement of the surface Ta of the superimposed substrate T can be performed while the relative positions (X-axis and Y-axis positions) of the second holding unit 120 and the thickness detector 151 as viewed in the Z-axis direction are the same.

[0109] In addition, the thickness detector 151 is not limited to a laser displacement meter. Figure 9 (A) and Figure 9 As shown in (B), the first imaging unit 141 may be used as the thickness detector 151. That is, the thickness detector 151 may include a camera.

[0110] In this case, the total thickness measurement control unit 183 measures the total thickness HT of the stacked substrates T by focusing the camera. The camera is focused by moving the second holding unit 120 in the Z-axis direction, for example, so that the edge intensity of the object captured in the image captured by the camera is maximized. Edge intensity refers to the difference in the amount of light received on both sides of the edge of the object.

[0111] like Figure 9 As shown in (A), the total thickness measurement control unit 183 focuses the camera on the holding surface 121 while the holding surface 121 of the second holding unit 120 is exposed. The camera focuses on each of the multiple points P in sequence. This focusing is performed before the second substrate W2 is brought in (S102). Alternatively, this focusing can be performed after the overlapping substrate T is brought out (S109). The total thickness measurement control unit 183 pre-stores the Z-axis position of the second holding unit 120 at the time of this focusing.

[0112] In addition, if Figure 9As shown in FIG. 1B , the total thickness measurement control unit 183 focuses the camera on the surface Ta of the superimposed substrate T while the superimposed substrate T is held on the holding surface 121 of the second holding unit 120. The total thickness measurement control unit 183 stores in advance the Z-axis position of the second holding unit 120 at the time of focusing.

[0113] The total thickness measurement control unit 183 calculates the displacement of the Z-axis position of the second holding unit 120 at the plurality of points P when the camera is focused on the surface Ta of the superimposed substrate T and when the camera is focused on the holding surface 121 of the second holding unit 120. The displacement is equal to the total thickness HT of the superimposed substrate T. Therefore, the total thickness HT can be calculated at the plurality of points P.

[0114] Alternatively, the camera may focus by moving the first holding unit 110 in the Z-axis direction instead of the second holding unit 120. The first imaging unit 141 is fixed to the first holding unit 110 and thus moves together with the first holding unit 110 in the Z-axis direction.

[0115] exist Figure 10 1 shows the arrangement of points P for measuring the total thickness HT of the stacked substrates T. Multiple points P are arranged on the holding surface 121 of the second holding portion 120 at positions avoiding the suction holes 122. By arranging multiple points P at positions avoiding the suction holes 122, the height of the holding surface 121 can be measured.

[0116] The second holding portion 120 has a rib 123 forming a flat surface on its holding surface 121. A plurality of points P are arranged on the flat surface of the rib 123. By measuring the height of the flat surface of the rib 123, the height of the holding surface 121 can be accurately measured.

[0117] A portion of the flat surface of the rib 123 is formed linearly. The linear rib 123 can be arranged in the radial direction of the superimposed substrate T, thereby enabling the height of the holding surface 121 to be measured at multiple points in the radial direction of the superimposed substrate T, and further enabling the total thickness HT to be measured at multiple points in the radial direction of the superimposed substrate T.

[0118] A portion of the flat surface of the rib 123 may be formed linearly and pass through the center of the holding surface 121. The height of the holding surface 121 and thus the total thickness HT can be measured at the radial center of the stacked substrates T.

[0119] The remaining portion of the flat surface of the rib 123 is formed in an annular shape. The annular rib 123 can be arranged circumferentially around the superimposed substrate T, thereby enabling the height of the holding surface 121 to be measured at multiple points along the circumference of the superimposed substrate T, and further enabling the total thickness HT to be measured at multiple points along the circumference of the superimposed substrate T.

[0120] A plurality of annular ribs 123 having different diameters may be arranged concentrically. The height of the holding surface 121 can be measured at a plurality of radial points of the superimposed substrate T, and the total thickness HT can be measured at a plurality of radial points of the superimposed substrate T.

[0121] Alternatively, a circular rib 123 may be disposed at the center of the annular rib 123. The height of the holding surface 121 can be measured at the radial center of the superimposed substrates T, and the total thickness HT can also be measured at the radial center of the superimposed substrates T.

[0122] When the second holding portion 120 has the annular rib 123 , if the bonding apparatus 100 includes the rotating portion 131 that rotates the holding surface 121 , the position of the point P for measuring the height of the holding surface 121 can be displaced in the circumferential direction of the superimposed substrates T.

[0123] In addition, the flat surface of the rib 123 can be Figure 11 As shown, the rib 123 may have an annular portion with the same diameter as the superimposed substrate T, and may have only a linear portion inside the annular portion. The flat surface of the rib 123 may also have a plurality of concentric annular portions with different diameters, but this is not shown.

[0124] In addition, the plurality of points P may be arranged on the holding surface 121 at a position avoiding the suction hole 122, and may be arranged on the front end surface of the pin 124 instead of the front end surface of the rib 123. In addition, the plurality of points P may be arranged separately on both the front end surface of the rib 123 and the front end surface of the pin 124.

[0125] Furthermore, the second retaining portion 120 is not limited to a pin suction cup and may also be a porous suction cup. The porous suction cup includes a porous body. Because the porous body includes multiple suction holes, the multiple points P are positioned away from the porous body. The multiple points P are positioned on the front end surface of the rib that divides the porous body into multiple regions.

[0126] As mentioned above, in Figure 6 In S105, the total thickness measurement control unit 183 controls the thickness detector 151 to measure the total thickness HT of the superimposed substrate T at a plurality of points P. In S105, the height Ta of the surface of the superimposed substrate T is measured. In addition, the height of the holding surface 121 of the second holding unit 120 can be measured at Figure 6 Before S102 (moving in the second substrate W2), it can also be done Figure 6 It is carried out after S108 (moving out the overlapped substrates).

[0127] Then, in Figure 6 In S106, the substrate thickness measurement control unit 185 controls the thickness detector 152 to Figure 12As shown, the thickness HB of the base substrate B1 is measured at a plurality of points P. The base thickness measurement control unit 185 controls the moving unit 130 or the rotating unit 131 to control the positions of the points P at which the base thickness HB is measured by the thickness detector 152 .

[0128] In this embodiment, since the base thickness HB is measured using the bonding apparatus 100, the positioning accuracy of the point P for measuring the base thickness HB can be improved compared to when the base thickness HB is measured using the grinding apparatus 200. Since the base thickness HB can be measured at the desired point P, the base thickness HB and the total thickness HT can be measured at the same point P within the plane of the superimposed substrates T. As a result, the distribution of the remaining thickness HR can be calculated with high precision, thereby reliably reducing variations in the base thickness HB after grinding.

[0129] The point P for measuring the base thickness HB and the point P for measuring the total thickness HT are located at the same point within the plane of the superimposed substrate T. By calculating the difference between the total thickness HT and the base thickness HB measured at the same point P within the plane of the superimposed substrate T, the remaining thickness HR can be accurately measured. The base thickness HB is stored corresponding to the position of the point P at which the base thickness HB was measured. Alternatively, the positions of multiple points P may be stored based on the position of a cutout indicating the crystal orientation of the first substrate W1 or the second substrate W2.

[0130] In addition, Figure 6 In the embodiment, S106 (measuring the base thickness HB) is performed after S105 (measuring the total thickness HT), but S105 may be performed after S106. The order of S105 and S106 is not particularly limited.

[0131] Then, in Figure 6 In S107, the remaining thickness calculation unit 187 calculates the thickness HR of the remaining portion R of the superimposed substrate T, excluding the base substrate B1, at a plurality of points P based on the data measured by the total thickness measurement control unit 183 and the data measured by the base thickness measurement control unit 185. The remaining thickness HR is obtained by calculating the difference between the total thickness HT measured at the same point P within the surface of the superimposed substrate T and the base thickness HB.

[0132] The remaining thickness HR tends to be uniform in the circumferential direction of the superimposed substrate T and non-uniform in the radial direction of the superimposed substrate T. For example, Figure 2 As shown in (A), the remaining thickness HR gradually decreases from the center of the superimposed substrate T toward the periphery.

[0133] Therefore, the remaining thickness calculation unit 187 can calculate the average value of the remaining thickness HR for each distance from the center of the superposed substrate T. When a plurality of points P are arranged in a ring shape, the average value can be calculated. The average distribution of the remaining thickness HR in the radial direction of the superposed substrate T can be determined.

[0134] Then, in Figure 6 In S108, the remaining thickness transmitting unit 189 transmits the remaining thickness HR and the data of the positions of the plurality of points P at which the remaining thickness HR is measured to the outside of the bonding apparatus 100. For example, the remaining thickness transmitting unit 189 transmits the remaining thickness HR and other data to the grinding apparatus 200. Alternatively, the remaining thickness transmitting unit 189 may transmit the remaining thickness HR and other data to the grinding apparatus 200 via the server S.

[0135] Finally, in Figure 6 In S109 , the second holding portion 120 releases the holding of the superimposed substrate T, and the transport device (not shown) receives the superimposed substrate T from the second holding portion 120 and carries the received superimposed substrate T out of the bonding apparatus 100 .

[0136] In addition, regarding Figure 6 The order of S107 (calculation of the remaining thickness HR), S108 (transmission of the remaining thickness HR), and S109 (unloading of the overlapped substrate T) is not particularly limited. S107 and S108 may be performed after S109.

[0137] In addition, if Figure 5 As shown in Figures 1 and 2, the bonding apparatus 100 of this embodiment includes the first holding portion 110 above the second holding portion 120. However, the first holding portion 110 may also be located below the second holding portion 120. In this case, the first holding portion 110 holds the first substrate W1 from below, with the bonding surface W1a of the first substrate W1 facing upward. Furthermore, the second holding portion 120 holds the second substrate W2 from above, with the bonding surface W2a of the second substrate W2 facing downward. Furthermore, the pressing portion 160 deforms the second substrate W2 held by the second holding portion 120. The pressing portion 160 presses the center of the second substrate W2 from above. Thus, the superimposed substrates T are held by the first holding portion 110. While the first holding portion 110 holds the superimposed substrates T, the thickness detectors 151 and 152 are fixed relative to the second holding portion 120. The total thickness measurement control portion 183 controls the moving portion 130 or the rotating portion 131 to control the position of the point P for measuring the total thickness HT. In addition, the base thickness measurement control unit 185 controls the moving unit 130 or the rotating unit 131 to control the position of the point P at which the base thickness HB is measured.

[0138] Next, refer to Figure 13The grinding device 200 is described below. The grinding device 200 grinds the base substrate B1 of the superimposed substrate T. Grinding includes lapping. The abrasive grains used in grinding can be either fixed abrasive grains or loose abrasive grains. The grinding device 200 includes, for example, a rotating table 210, four suction cups 220, and three grinding units 230.

[0139] The rotating table 210 holds four suction cups 220 at equal intervals around the rotation centerline R1 and rotates about the rotation centerline R1. The four suction cups 220 rotate with the rotating table 210 and move to the load / unload position A0, the primary grinding position A1, the secondary grinding position A2, the tertiary grinding position A3, and then the load / unload position A0 in this order.

[0140] The loading and unloading position A0 serves as both a loading position for loading the laminated substrate T and a unloading position for unloading the laminated substrate T. In this embodiment, the loading and unloading positions are the same, but they may be different positions. The primary grinding position A1 is where the primary grinding is performed. The secondary grinding position A2 is where the secondary grinding is performed. The tertiary grinding position A3 is where the tertiary grinding is performed.

[0141] The four suction cups 220 are arranged with their respective rotation center lines R2 (refer to Figure 14 ) is rotatably mounted on the rotating table 210. At the primary grinding position A1, the secondary grinding position A2, and the tertiary grinding position A3, the suction cup 220 rotates around the respective rotation center lines R2.

[0142] One grinding unit 230 grinds the base substrate B1 once at the primary grinding position A1 , another grinding unit 230 grinds the base substrate B1 twice at the secondary grinding position A2 , and the remaining grinding units 230 grind the base substrate B1 three times at the tertiary grinding position A3 .

[0143] Furthermore, the number of grinding units 230 may be one or more. Furthermore, the number of suction cups 220 may be greater than the number of grinding units 230. However, the rotary table 210 may not be provided. In the absence of the rotary table 210, the number of suction cups 220 may be the same as the number of grinding units 230, or may be one.

[0144] Next, refer to Figure 14 The grinding unit 230 is described below. The grinding unit 230 includes a movable portion 231 for mounting a grinding tool C. The grinding tool C contacts the base substrate B1 and grinds the base substrate B1. The grinding tool C includes, for example, a disc-shaped grinding wheel C1 and a plurality of grinding stones C2 arranged in an annular pattern on the lower surface of the grinding wheel C1.

[0145] In the present embodiment, a plurality of grinding stones C2 are annularly arranged on the outer periphery of the lower surface of the grinding wheel C1 , but the technology disclosed herein is not limited thereto. The grinding stones C2 may be fixed to the entire lower surface of the grinding wheel C1 .

[0146] The movable portion 231 includes a flange 232 for mounting a grinding tool C, a spindle 233 with the flange 232 at its lower end, and a spindle motor 234 that rotates the spindle 233. The flange 232 is horizontally disposed, with the grinding tool C mounted on its lower surface. The spindle 233 is vertically disposed. The spindle motor 234 rotates the spindle 233, thereby rotating the grinding tool C mounted on the flange 232. The rotation centerline R3 of the grinding tool C is the rotation centerline of the spindle 233.

[0147] The grinding unit 230 further includes a lifting unit 235 that raises and lowers the movable unit 231. The lifting unit 235 includes, for example, a vertical Z-axis guide 236, a Z-axis slide 237 that moves along the Z-axis guide 236, and a Z-axis motor 238 that moves the Z-axis slide 237. The movable unit 231 is fixed to the Z-axis slide 237, and the movable unit 231 and the grinding tool C are raised and lowered together with the Z-axis slide 237. The lifting unit 235 further includes a position detector 239 for detecting the position of the grinding tool C. The position detector 239 detects the position of the grinding tool C by, for example, detecting the rotation of the Z-axis motor 238.

[0148] The lifting unit 235 lowers the grinding tool C from the standby position. The grinding tool C rotates as it descends, coming into contact with the upper surface of the rotating superposed substrate T and grinding the entire upper surface of the base substrate B1. While grinding the base substrate B1, grinding fluid is supplied to the upper surface of the base substrate B1. When the total thickness HT of the superposed substrates T, and consequently the thickness HB of the base substrate B1, reaches a set value, the lifting unit 235 stops lowering the grinding tool C. The lifting unit 235 then raises the grinding tool C to the standby position.

[0149] like Figure 16 As shown, the grinding device 200 includes an inclination angle adjustment unit 250 for adjusting the inclination angle of the rotation center line R2 of the suction pad 220. The inclination angle adjustment unit 250 is provided for each suction pad 220, and the inclination angle is adjusted for each suction pad 220.

[0150] In addition, the inclination angle adjustment part 250 only needs to adjust the inclination angle of the rotation center line R2 of the suction cup 220 relative to the rotation center line R3 of the grinding tool C, or the inclination angle of the rotation center line R3 of the grinding tool C can be adjusted instead of adjusting the inclination angle of the rotation center line R2 of the suction cup 220.

[0151] The suction cup 220 is mounted on the rotating table 210 via the support 222 and the tilt angle adjustment unit 250. The support 222 supports the suction cup 220 in a rotatable manner. The suction cup motor 223 (see FIG. 25 ) rotates the suction cup 220. Figure 14 ) is, for example, built into the support base 222. A flange 224 is formed on the support base 222.

[0152] The tilt angle adjuster 250 includes three connecting portions 251 arranged at equal intervals (eg, 120° intervals) around the rotation center line R2 of the suction cup 220 . The three connecting portions 251 connect the flange 224 of the support base 222 and the rotating base 210 .

[0153] The two connecting parts 251 each include a motor 252 and a motion conversion mechanism 253 that converts the rotational motion of the motor 252 into the linear motion of the flange 224 to adjust the gaps G1 and G2 between the flange 224 and the rotating table 210. The motion conversion mechanism 253 includes, for example, a ball screw.

[0154] The remaining one connecting portion 251 fixes the gap between the flange 224 of the support table 222 and the rotating table 210. However, the remaining one connecting portion 251 may be configured to be able to adjust the gap between the flange 224 of the support table 222 and the rotating table 210.

[0155] The tilt angle adjustment unit 250 adjusts the gaps G1 and G2 to adjust the tilt angle. The tilt angle is set for each grinding position A1, A2, and A3. The reason for setting the tilt angle for each grinding position A1, A2, and A3 is that the spindle 233 is provided for each grinding position A1, A2, and A3.

[0156] When the tilt angle changes, Figure 15 The contact pressure distribution between the grindstone C2 and the base substrate B1 along the track E of the grindstone C2 shown in the figure changes. At locations with higher contact pressure, the grinding of the base substrate B1 progresses more than at locations with lower contact pressure. Therefore, by adjusting the tilt angle, the thickness distribution in the radial direction of the base substrate B1 can be adjusted.

[0157] Next, refer to Figure 17 The adjustment of the tilt angle is described below. The suction cup 220 has a holding surface 221 for holding the superimposed substrate T. The holding surface 221 holds the superimposed substrate T from below in such a manner that the base substrate B1 faces upward. Figure 17 As emphasized in the above, the holding surface 221 of the suction cup 220 is a conical surface symmetrical about the rotation center line R2 of the suction cup 220. Since the holding surface 221 of the suction cup 220 is a conical surface, it can cope with various radial distributions of the remaining thickness HR by adjusting the inclination angle.

[0158] The tilt angle is set so that the thickness HB of the base after grinding becomes uniform. Figure 17 The tilt angle is corrected based on the fact that the remaining thickness HR is uniform in the range from the center to the periphery of the superimposed substrate T as shown in (A). The reference tilt angle is also referred to as a reference value.

[0159] For example, in Figure 17 When the remaining thickness HR gradually increases from the center of the superimposed substrate T toward the periphery as shown in (B), the tilt angle is corrected to be smaller than the reference value. Figure 17 When the remaining thickness HR gradually decreases from the center toward the periphery of the superimposed substrate T as shown in (C), the tilt angle is corrected to be larger than the reference value.

[0160] In addition, even when the remaining thickness HR gradually decreases or increases from the center and periphery of the superimposed substrate T toward the middle point between the center and periphery of the superimposed substrate T, the tilt angle can be corrected so that the base thickness HB after grinding becomes uniform.

[0161] like Figure 13 As shown, the grinding device 200 includes a control unit 280 for controlling the operation of the grinding device 200. The control unit 280 is, for example, a computer and includes a CPU 281 and a storage medium 282 such as a memory. The storage medium 282 stores programs for controlling various processes executed in the grinding device 200. The control unit 280 controls the operation of the grinding device 200 by causing the CPU 281 to execute the programs stored in the storage medium 282.

[0162] like Figure 3 As shown, the control unit 280 includes, for example, a data receiving unit 283, a data storage unit 284, and a tilt angle control unit 285. The data receiving unit 283 receives data on a plurality of points P of the superimposed substrates T measured by the bonding apparatus 100. The received data includes, for example, the remaining thickness HR and the positions of the plurality of points P at which the remaining thickness HR was measured.

[0163] As described above, the welding apparatus 100 requires higher-precision position control than the grinding apparatus 200. Therefore, motors with high responsiveness to position commands and high position resolution are used for the moving portion 130 and the rotating portion 131. In some cases, a vibration-absorbing device is installed in the welding apparatus 100 in place of or in addition to these high-performance motors.

[0164] In this embodiment, the remaining thickness HR is measured using the bonding apparatus 100. Therefore, the positioning accuracy of the point P for measuring the remaining thickness HR can be improved compared to the case where the remaining thickness HR is measured using the grinding apparatus 200. As a result, the distribution of the remaining thickness HR can be calculated with high accuracy, thereby reliably reducing the variation in the base thickness HB after grinding.

[0165] The data storage unit 284 stores the data received by the data receiving unit 283. For example, the data storage unit 284 stores the remaining thickness HR in association with the position of the point P where the remaining thickness HR was measured. Temporarily storing the distribution of the remaining thickness HR allows for the tilt angle to be corrected at any time.

[0166] The tilt angle control unit 285 controls the tilt angle adjustment unit 250 based on the data received by the data receiving unit 283 to control the tilt angle so that the base thickness HB after grinding becomes uniform. As described above, the variation in the base thickness HB after grinding can be reliably reduced.

[0167] Next, refer to Figure 18 The operation of the grinding device 200 will be described. Figure 18 Each of the steps shown is performed under the control of the control unit 280 of the grinding device 200 .

[0168] First, in Figure 18 In S201, the transport robot 240 carries the superimposed substrate T onto the suction cup 220. The suction cup 220 receives the superimposed substrate T from the transport robot 240 at the loading / unloading position A0. The suction cup 220 holds the superimposed substrate T from below, with the base substrate B1 facing upward. The suction cup 220 then rotates together with the rotary table 210, moving from the loading / unloading position A0 to the primary grinding position A1.

[0169] Then, in Figure 18 In S202, the data receiving unit 283 receives the data measured by the bonding apparatus 100. The received data includes, for example, the remaining thickness HR and the positions of the plurality of points P at which the remaining thickness HR was measured. Furthermore, the order of receiving data (S202) and loading the superimposed substrate T (S201) may be reversed. S201 may be performed after S202. S202 only needs to be performed before adjusting the tilt angle (S203).

[0170] Then, in Figure 18 In S203 , the tilt angle control unit 285 controls the tilt angle adjustment unit 250 based on the remaining thickness HR at the plurality of points P, and controls the tilt angle so that the thickness HB of the base substrate B1 after the primary grinding becomes uniform.

[0171] Then, in Figure 18In S204 , the grinding unit 230 performs a primary grinding on the base substrate B1 at the primary grinding position A1 . Thereafter, the suction cup 220 rotates together with the rotating table 210 to move from the primary grinding position A1 to the secondary grinding position A2 .

[0172] Then, in Figure 18 In S205 , the tilt angle control unit 285 controls the tilt angle adjustment unit 250 based on the remaining thickness HR at the plurality of points P, and controls the tilt angle so that the thickness HB of the base substrate B1 after the secondary grinding becomes uniform.

[0173] Then, in Figure 18 In S206 , the grinding unit 230 performs secondary grinding on the base substrate B1 at the secondary grinding position A2 . Thereafter, the suction cup 220 rotates together with the rotating table 210 to move from the secondary grinding position A2 to the tertiary grinding position A3 .

[0174] Then, in Figure 18 In S207 , the tilt angle control unit 285 controls the tilt angle adjustment unit 250 based on the remaining thickness HR at the plurality of points P, and controls the tilt angle so that the thickness HB of the base substrate B1 after the three grindings becomes uniform.

[0175] Then, in Figure 18 In S208 , the grinding unit 230 grinds the base substrate B1 three times at the three-time grinding position A3 . Thereafter, the suction cup 220 rotates together with the rotating table 210 to move from the three-time grinding position A3 to the loading / unloading position A0 .

[0176] Finally, in Figure 18 In S209, the suction cup 220 releases its grip on the superimposed substrate T, and the transfer robot 240 receives the superimposed substrate T from the suction cup 220 and unloads the received superimposed substrate T outside the grinding apparatus 200. Furthermore, before unloading, the substrate thickness HB after the tertiary grinding is measured at multiple points at the loading / unloading position A0 or the tertiary grinding position A3. If the deviation in the substrate thickness HB after the tertiary grinding is greater than a threshold value, a correction value for the tilt angle is calculated to reduce the deviation to less than the threshold value. This correction value is taken into account when correcting the tilt angle during the next and subsequent tertiary grindings.

[0177] Next, refer to Figure 19 The structures of the control unit 180 of the bonding apparatus 100 and the control unit 280 of the grinding apparatus 200 according to the first modification will be described. Figure 3 The same components are denoted by the same reference numerals, and their description is omitted. In this modification, the thickness HA of the second substrate W2 is measured instead of the thickness HR of the remaining portion R.

[0178] like Figure 1 As shown in (A), the thickness HR of the remaining portion R is equal to the sum of the thickness HA of the second substrate W2, the thickness of the device layer D1, and the thickness of the bonding layer F1. If the thickness of the device layer D1 and the bonding layer F1 are uniform, the deviation of the remaining thickness HR of the remaining portion R is equal to the deviation of the thickness HA of the second substrate W2. In this case, the thickness HA of the second substrate W2 can be used to replace the thickness HR of the remaining portion R.

[0179] If the thickness HA of the second substrate W2 is used instead of the thickness HR of the remaining portion R, the thickness detector 152 for measuring the base thickness HB is not required. However, when the remaining thickness HR is measured by calculating the difference between the total thickness HT and the base thickness HB, the deviation in the base thickness HB after grinding can be more reliably reduced than when the thickness HA is measured instead of the remaining thickness HR.

[0180] The control unit 180 of the bonding apparatus 100 of this modification includes a thickness measurement control unit 190, a thickness storage unit 191, and a thickness transmitter 192. The thickness measurement control unit 190 controls the thickness detector 151 to measure the thickness HA of the second substrate W2 at a plurality of points P. A method for measuring the thickness HA will be described later.

[0181] The thickness storage unit 191 stores data measured by the thickness measurement control unit 190. For example, the thickness storage unit 191 stores the thickness HA in association with the position of the point P where the thickness HA was measured. Temporarily storing data such as the thickness HA allows the data such as the thickness HA to be transmitted at any time.

[0182] The thickness transmission unit 192 transmits the data measured by the thickness measurement control unit 190 to the outside of the bonding apparatus 100. For example, the thickness transmission unit 192 transmits data including the thickness HA and the positions of the plurality of points P at which the thickness HA was measured to the grinding apparatus 200. The thickness transmission unit 192 may also transmit data such as the thickness HA to the grinding apparatus 200 via the server S.

[0183] Next, refer to Figure 20 The joining method involved in the first modification is described. Figure 6 The same steps in the joining method shown are denoted by the same reference numerals, and description thereof will be omitted.

[0184] exist Figure 20In S110, the thickness measurement control unit 190 controls the thickness detector 151 to measure the thickness HA of the second substrate W2 at a plurality of points P. Furthermore, the thickness measurement control unit 190 controls the moving unit 130 or the rotating unit 131 to control the positions of the points P at which the thickness HA is measured by the thickness detector 151. The thickness HA of the second substrate W2 is measured before bonding (S104). The thickness HA of the second substrate W2 is useful when the thickness of the device layer D1 and the thickness of the bonding layer F1 are uniform. The thickness HA of the second substrate W2 is used, for example, in the grinding apparatus 200 to adjust the inclination angle of the rotation centerline R2 of the suction cup 220.

[0185] In this modified example, since the thickness HA is measured by the bonding apparatus 100, the positioning accuracy of the point P for measuring the thickness HA can be improved compared to the case where the thickness HA is measured by the grinding apparatus 200. As a result, the distribution of the thickness HA can be calculated with high accuracy, and the variation in the base thickness HB after grinding can be reliably reduced.

[0186] The thickness HA is measured in the same manner as the total thickness HT. Figure 21 As shown in FIG. 1A , the thickness measurement control unit 190 measures the height of the holding surface 121 at a plurality of points P in advance in a state where the holding surface 121 of the second holding unit 120 is exposed.

[0187] The height of the holding surface 121 is measured before the second substrate W2 is loaded (S102). Alternatively, the height of the holding surface 121 may be measured after the superimposed substrate T is unloaded (S109). The height of the holding surface 121 can be measured as long as the holding surface 121 is exposed.

[0188] In addition, if Figure 21 As shown in (B), the thickness measurement control unit 190 measures the height of the bonding surface W2a of the second substrate W2 at a plurality of points P while the second substrate W2 is held on the holding surface 121 of the second holding unit 120. The bonding surface W2a of the second substrate W2 is oriented in the opposite direction (e.g., upward) to the non-bonding surface in contact with the second holding unit 120. The height of the bonding surface W2a of the second substrate W2 and the height of the holding surface 121 of the second holding unit 120 are measured at the same plurality of points P. When viewed from the vertical direction, the point P at which the height of the bonding surface W2a of the second substrate W2 is measured is the same point as the point P at which the height of the holding surface 121 of the second holding unit 120 is measured.

[0189] When measuring the height of the bonding surface W2a of the second substrate W2 and the height of the holding surface 121 of the second holding portion 120, the second holding portion 120 can be controlled to maintain the same position in the X-axis, Y-axis, and Z-axis directions. In this case, the difference between the height of the bonding surface W2a of the second substrate W2 and the height of the holding surface 121 of the second holding portion 120 is equal to the thickness HA of the second substrate W2. Alternatively, the thickness detector 151 can be moved without moving the second holding portion 120, or both the second holding portion 120 and the thickness detector 151 can be moved. Therefore, the height measurement of the holding surface 121 of the second holding portion 120 and the height measurement of the bonding surface W2a of the second substrate W2 can be performed while the relative positions (X-axis, Y-axis, and Z-axis positions) of the second holding portion 120 and the thickness detector 151 are the same. In this case, the difference between the height of the bonding surface W2a of the second substrate W2 and the height of the holding surface 121 of the second holding portion 120 is equal to the thickness HA of the second substrate W2.

[0190] The thickness measurement control unit 190 calculates the difference between the height of the bonding surface W2a of the second substrate W2 and the height of the holding surface 121 of the second holding unit 120 at a plurality of points P, thereby calculating the thickness HA of the second substrate W2 at the plurality of points. This calculation may also be performed after the superimposed substrate T is unloaded ( S109 ).

[0191] According to this modified example, the difference between the height of the bonding surface W2a of the second substrate W2 and the height of the holding surface 121 of the second holding portion 120 is calculated at the same point P when viewed from the vertical direction. Therefore, even in cases where the thickness HA of the second substrate W2 is uneven, the thickness HA can be measured with high accuracy. Compared to a case where the difference between the height of the bonding surface W2a of the second substrate W2 and the height of the holding surface 121 of the second holding portion 120 is calculated at different points, the distribution of the thickness HA of the second substrate W2 can be measured with high accuracy.

[0192] The thickness storage unit 191 stores the thickness HA measured by the thickness measurement control unit 190 in association with the position of the point P at which the thickness HA was measured. Alternatively, the positions of a plurality of points P may be stored with reference to the position of a cutout indicating the crystal orientation of the second substrate W2.

[0193] Furthermore, the second holding portion 120 can be displaced in the Z-axis direction by maintaining the same X- and Y-axis positions when measuring the height of the bonding surface W2a of the second substrate W2 and when measuring the height of the holding surface 121 of the second holding portion 120. In this case, the thickness HA of the second substrate W2 can be calculated by also taking into account the displacement of the second holding portion 120 in the Z-axis direction. Alternatively, the thickness detector 151 can be moved in the X- and Y-axis directions instead of the second holding portion 120, or one of the second holding portion 120 and the thickness detector 151 can be moved in the X-axis direction while the other moves in the Y-axis direction. Therefore, the height measurement of the holding surface 121 of the second holding portion 120 and the height measurement of the bonding surface W2a of the second substrate W2 can be performed while maintaining the same relative positions (X- and Y-axis positions) of the second holding portion 120 and the thickness detector 151 when viewed from the Z-axis direction.

[0194] In addition, the thickness HA can be measured by focusing the camera in the same manner as the total thickness HT.

[0195] Then, in Figure 20 In S111, the thickness transmitting unit 192 transmits data such as the thickness HA and the positions of the plurality of points P at which the thickness HA was measured to the outside of the bonding apparatus 100. For example, the thickness transmitting unit 192 transmits data such as the thickness HA to the grinding apparatus 200. The thickness transmitting unit 192 can transmit data such as the thickness HA to the grinding apparatus 200 via the server S. This transmission can be performed only after the thickness HA is measured (S110) and can also be performed after the superimposed substrate T is unloaded (S109).

[0196] Next, refer to Figure 22 The structures of the control unit 180 of the bonding apparatus 100 and the control unit 280 of the grinding apparatus 200 according to the second modification will be described. Figure 3 The same components are denoted by the same reference numerals, and their description is omitted. In this modification, the remaining thickness HR is calculated not by the joining device 100 but by the grinding device 200 .

[0197] The control unit 180 of the bonding apparatus 100 of this modified example includes a total thickness transmitter 193 and a base thickness transmitter 194. The total thickness transmitter 193 transmits data measured by the total thickness measurement controller 183 to the outside of the bonding apparatus 100. For example, the total thickness transmitter 193 transmits data including the total thickness HT and the positions of multiple points P at which the total thickness HT was measured to the grinding apparatus 200. The total thickness transmitter 193 can transmit data such as the total thickness HT to the grinding apparatus 200 via the server S.

[0198] The substrate thickness transmitting unit 194 transmits the data measured by the substrate thickness measurement control unit 185 to the outside of the bonding apparatus 100. For example, the substrate thickness transmitting unit 194 transmits data including the substrate thickness HB and the positions of the plurality of points P at which the substrate thickness HB was measured to the grinding apparatus 200. The substrate thickness transmitting unit 194 can transmit data such as the substrate thickness HB to the grinding apparatus 200 via the server S.

[0199] On the other hand, the control unit 280 of the grinding device 200 of this modified example includes, in addition to a data receiving unit 283, a data storage unit 284, and an inclination angle control unit 285, a remaining thickness calculation unit 286 and a remaining thickness storage unit 287. The data received by the data receiving unit 283 includes, for example, both the total thickness HT and the base thickness HB, as well as the positions of a plurality of points P at which these thicknesses are measured. The points P at which the total thickness HT is measured are the same as the points P at which the base thickness HB is measured.

[0200] The remaining thickness calculating unit 286 calculates the remaining thickness HR at a plurality of points P based on the data received by the data receiving unit 283. The remaining thickness calculating unit 286 calculates the remaining thickness HR by calculating the difference between the total thickness HT and the base thickness HB at each of the plurality of points P. The remaining thickness calculating unit 286 may calculate an average value of the remaining thickness HR for each distance from the center of the superimposed substrates T.

[0201] The remaining thickness storage unit 287 stores the data calculated by the remaining thickness calculation unit 286. For example, the remaining thickness storage unit 287 stores the remaining thickness HR in association with the position of the point P at which the remaining thickness HR was measured. Temporarily storing data such as the remaining thickness HR allows the tilt angle control unit 285 to control the tilt angle at appropriate timing.

[0202] According to this variation, as in the above-described embodiment, the distribution of total thickness HT and the distribution of base thickness HB are measured using the bonding apparatus 100, not the grinding apparatus 200. This improves the positioning accuracy of the points P for measuring total thickness HT and base thickness HB. Consequently, the distribution of the remaining thickness HR can be calculated with high precision, reliably reducing variations in base thickness HB after grinding.

[0203] Next, refer to Figure 23 The configurations of the control unit 180 of the bonding apparatus 100 and the control unit 280 of the grinding apparatus 200 according to the third modification will be described. Figure 22The same components are denoted by the same reference numerals, and their description is omitted. In this modification, the base thickness HB is measured not by the bonding apparatus 100 but by the grinding apparatus 200 .

[0204] The control unit 280 of the grinding device 200 of this modification includes a base thickness measurement control unit 288 and a base thickness storage unit 289. The base thickness measurement control unit 288 controls Figure 24 The thickness detector 261 shown is used to measure the substrate thickness HB at multiple points P. Furthermore, the substrate thickness measurement control unit 288 controls the moving portion that moves the thickness detector 261 in the radial direction of the superposed substrate T to control the position of the point P for measuring the substrate thickness HB. The position of the point P for measuring the substrate thickness HB can also be controlled by rotating the suction cup 220. The point P for measuring the substrate thickness HB and the point P for measuring the total thickness HT are the same point within the surface of the superposed substrate T. By calculating the difference between the total thickness HT and the substrate thickness HB measured at the same point P within the surface of the superposed substrate T, the remaining thickness HR can be accurately measured.

[0205] like Figure 24 As shown, the thickness detector 261 measures the substrate thickness HB at, for example, the loading / unloading position A0. As described above, the thickness detector 261 is movable in the radial direction of the stacked substrates T. The substrate thickness HB can be measured at multiple radial points on the stacked substrates T. While there is one thickness detector 261 in this modified example, there may be multiple thickness detectors 261. Since there are multiple points P at which the substrate thickness HB is measured, a greater number of thickness detectors 261 can shorten the measurement time.

[0206] Furthermore, the thickness detector 261 is not limited to the loading / unloading position A0; for example, it can also be located at the primary grinding position A1. In this case, the base substrate thickness HB can be measured before the primary grinding, allowing the remaining thickness HR to be calculated. Thus, the tilt angle can be controlled to ensure that the thickness HB of the base substrate B1 after the primary grinding is uniform.

[0207] However, as long as the thickness HB of the base substrate B1 after the third grinding is uniform, the thickness detector 261 may be provided at the second grinding position A2 or the third grinding position A3.

[0208] The base thickness storage unit 289 stores data measured by the base thickness measurement control unit 288. For example, the base thickness storage unit 289 stores the base thickness HB in association with the position of the point P at which the base thickness HB was measured. Temporarily storing data such as the base thickness HB allows calculation of the remaining thickness HR to be performed at any time.

[0209] The remaining thickness calculator 286 calculates the remaining thickness HR at the plurality of points P based on the data received by the data receiver 283 and the data measured by the substrate thickness measurement controller 288. The remaining thickness calculator 286 calculates the remaining thickness HR by calculating the difference between the total thickness HT and the substrate thickness HB at each of the plurality of points P. The remaining thickness calculator 286 can calculate the average value of the remaining thickness HR for each distance from the center of the superimposed substrates T.

[0210] According to this variation, as in the aforementioned embodiment, the distribution of total thickness HT is measured using the bonding apparatus 100, not the grinding apparatus 200. This improves the positioning accuracy of the point P for measuring total thickness HT. The total thickness HT can be measured at the desired point P, allowing both the total thickness HT and the base thickness HB to be measured at the same point P within the plane of the superimposed substrates T. As a result, the distribution of the remaining thickness HR can be calculated with high precision, reliably reducing variations in the base thickness HB after grinding.

[0211] While the above describes the bonding apparatus and bonding method of the present disclosure, the present disclosure is not limited to the aforementioned embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These also fall within the technical scope of the present disclosure.

[0212] This application claims priority from Japanese Patent Application No. 2020-011926 filed with the Japan Patent Office on January 28, 2020, the entire contents of which are incorporated herein by reference.

[0213] Description of Reference Numerals

[0214] 100: bonding device; 110: first holding portion; 120: second holding portion; 121: holding surface; 151: thickness detector; 183: total thickness measurement control unit; W1: first substrate; B1: base substrate; D1: device layer; W2: second substrate; T: overlapping substrate.

Claims

1. A bonding device for bonding a first substrate and a second substrate to obtain a superposed substrate. The first substrate includes a base substrate and a device layer, wherein the device layer is formed on a surface of the base substrate facing the second substrate. The engaging device comprises: a first holding portion that holds the first substrate; a second holding portion that holds the second substrate; a moving portion that moves the first holding portion and the second holding portion relative to each other; as well as a total thickness measurement control unit that controls a thickness detector for measuring the total thickness of the superimposed substrates to measure the total thickness at a plurality of points; The bonding apparatus further includes a base thickness measurement control unit configured to control a thickness detector for measuring the thickness of the base substrate to measure the thickness of the base substrate at the plurality of points. The bonding device also has a remaining thickness calculation unit, which calculates the thickness of the remaining parts of the overlapping substrate other than the base substrate at the multiple points based on the data measured by the total thickness measurement control unit and the data measured by the base thickness measurement control unit.

2. The joining device according to claim 1, characterized in that The device further includes a total thickness storage unit for storing data measured by the total thickness measurement control unit.

3. The joining device according to claim 1, wherein: The device further includes a remaining thickness transmitting unit configured to transmit the data calculated by the remaining thickness calculating unit to the outside of the bonding apparatus.

4. The joining device according to claim 3, characterized in that The remaining thickness transmitting unit transmits the data calculated by the remaining thickness calculating unit to a grinding device that grinds the base substrate.

5. The joining device according to claim 4, characterized in that The remaining thickness transmitting unit transmits the data calculated by the remaining thickness calculating unit to the grinding device via a server.

6. The joining device according to any one of claims 1 to 5, characterized in that The device further includes a base thickness transmitting unit configured to transmit data measured by the base thickness measurement control unit to the outside of the bonding apparatus.

7. The joining device according to any one of claims 1 to 5, characterized in that When the second holding portion holds the superposed substrates, a thickness detector for measuring the total thickness is fixed relative to the first holding portion. When the first holding portion holds the superposed substrates, a thickness detector for measuring the total thickness is fixed relative to the second holding portion. The total thickness measurement control unit controls the moving unit to control the position of a point at which the total thickness is measured.

8. The joining device according to any one of claims 1 to 5, characterized in that The thickness detector for measuring the total thickness includes a laser displacement meter.

9. The joining device according to any one of claims 1 to 5, characterized in that The second holding portion or the first holding portion has a holding surface for holding the superimposed substrates. The total thickness measurement control unit implements the following control: measuring the position of the holding surface in a direction perpendicular to the holding surface at the plurality of points with the holding surface exposed; measuring positions of the surface of the superimposed substrate in a direction perpendicular to the holding surface at the plurality of points while the superimposed substrate is held on the holding surface; and The total thickness at the plurality of points is calculated based on a difference between a position of the holding surface in a direction perpendicular to the holding surface and a position of the surface of the superimposed substrate.

10. The joining device according to claim 9, characterized in that The second holding portion or the first holding portion has a suction hole on the holding surface for sucking the superimposed substrates. The plurality of points are arranged on the holding surface at positions avoiding the suction hole.

11. The joining device according to claim 10, characterized in that The second holding portion or the first holding portion has a rib forming a flat surface on the holding surface, The plurality of points are arranged on the flat surface of the rib.

12. The joining device according to claim 11, characterized in that At least a portion of the flat surface of the rib is formed in a linear shape or an annular shape.

13. The joining device according to claim 12, characterized in that At least a portion of the flat surface of the rib is formed in an annular shape, The joining device further includes a rotating portion that rotates the holding surface.

14. A bonding method, comprising bonding a first substrate and a second substrate using a bonding device to obtain a superposed substrate. The first substrate includes a base substrate and a device layer, wherein the device layer is formed on a surface of the base substrate facing the second substrate. The joining method comprises: holding the first substrate by a first holding portion of the engaging device; holding the second substrate by a second holding portion of the engaging device; controlling a moving portion that moves the first holding portion and the second holding portion relative to each other to align the first substrate with the second substrate; controlling a thickness detector for measuring the total thickness of the superposed substrates by a total thickness measurement control unit of the bonding device to measure the total thickness of the superposed substrates at a plurality of points; controlling a thickness detector for measuring the thickness of the base substrate by a base thickness measurement control unit of the bonding apparatus to measure the thickness of the base substrate at the plurality of points; as well as The thicknesses of the remaining portion of the superimposed substrate excluding the base substrate at the plurality of points are calculated based on the data measured by the total thickness measurement control unit and the data measured by the base thickness measurement control unit.

15. The bonding method according to claim 14, wherein: The thickness of the base substrate is measured at the plurality of points while the superimposed substrate is held by the second holding portion or the first holding portion.

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