Microwave device, circuit board, electronic device, and method for adjusting microwave device

Abstract

The present application discloses a microwave device, a circuit board, an electronic device and a debugging method of the microwave device. The microwave device comprises a receiving layer, a radiation layer and a shielding layer. The impedance of the radiation layer is matched with the impedance of the receiving layer. The shielding layer is arranged between the receiving layer and the radiation layer and is insulated from the receiving layer and the radiation layer respectively. The shielding layer is provided with a first gap and a second gap, and the extension direction of the first gap intersects with the extension direction of the second gap. The receiving layer is coupled with the radiation layer through the first gap and the second gap. The microwave device, the circuit board, the electronic device and the debugging method of the microwave device can reduce the loss under the condition of the frequency selection range.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the field of electronic technology, and in particular, to a microwave device, a circuit board, an electronic device, and a debugging method of the microwave device. BACKGROUND

[0002] A frequency selective surface (FSS) can form a band-stop characteristic or a band-pass characteristic in a specific operating frequency band, thereby realizing a frequency selection effect on electromagnetic waves. A microwave device can be constructed by using the frequency selective surface.

[0003] In a conventional microwave device, the frequency range of the frequency selective surface is usually expanded by increasing the number of layers. However, the more the number of layers is, the greater the loss is. SUMMARY

[0004] The present disclosure provides a microwave device, a circuit board, an electronic device, and a debugging method of the microwave device, which can reduce the loss under the condition of ensuring the frequency selection range.

[0005] The technical scheme is as follows:

[0006] According to a first aspect of the embodiments of the present disclosure, a microwave device is provided, which includes a receiving layer, a radiating layer, and a shielding layer. The impedance of the radiating layer matches the impedance of the receiving layer. The shielding layer is arranged between the receiving layer and the radiating layer and is insulated from the receiving layer and the radiating layer, respectively. The shielding layer is provided with a first slit and a second slit. The extension direction of the first slit intersects the extension direction of the second slit. The receiving layer is coupled to the radiating layer through the first slit and the second slit.

[0007] The technical scheme provided by the embodiments of the present disclosure can have the following beneficial effects:

[0008] The microwave device described above is beneficial to improve the anti-interference capability by arranging the shielding layer to make the receiving layer and the radiating layer not interfere with each other. Meanwhile, the receiving layer and the radiating layer are coupled through the first slit and the second slit, and the extension direction of the first slit intersects the extension direction of the second slit. In this way, the frequency selection range of the microwave device can be expanded by adjusting the size of the first slit and the second slit, which is beneficial to reduce the number of layers of the microwave device and further reduce the loss.

[0009] The technical scheme is further described as follows:

[0010] In one of the embodiments, the first slit and the second slit are in a strip shape and are arranged in a cross shape.

[0011] In one of the embodiments, the first slit and the second slit are arranged in a perpendicular manner.

[0012] In one of the embodiments, the shielding layer further comprises a coupling branch, which is arranged on the first slit and / or the second slit.

[0013] In one of the embodiments, the coupling branch comprises a first extended slit, which is arranged in parallel with the first slit and connected with the second slit; and / or, the coupling branch further comprises a second extended slit, which is arranged in parallel with the second slit and connected with the first slit, and the second extended slit is arranged on the shielding layer in parallel with the first extended slit.

[0014] In one of the embodiments, the first slit and / or the second slit is a microstrip slit.

[0015] In one of the embodiments, the first slit is at least two, which are arranged in parallel with each other; and / or, the second slit is at least two, which are arranged in parallel with each other.

[0016] In one of the embodiments, the microwave device further comprises a dielectric layer, the shielding layer and the receiving layer are arranged in insulation through at least one dielectric layer, and / or, the shielding layer and the radiating layer are arranged in insulation through at least one dielectric layer.

[0017] In one of the embodiments, the shielding layer is at least two, which are arranged in turn and sandwiched between the receiving layer and the radiating layer.

[0018] In one of the embodiments, the receiving layer comprises a first frequency selective surface, and / or, the radiating layer comprises a second frequency selective surface.

[0019] In one of the embodiments, the first frequency selective surface is at least two, which are arranged in turn; and / or, the second frequency selective surface is at least two, which are arranged in turn.

[0020] In one of the embodiments, the first frequency selective surface and the second frequency selective surface are microstrip patches.

[0021] Alternatively, the first frequency selective surface and the second frequency selective surface comprise a first metal sheet and a first transmission slit arranged on the first metal sheet.

[0022] Alternatively, one of the first frequency selective surface and the second frequency selective surface is a microstrip patch, and the other comprises a second metal sheet and a second transmission slit arranged on the second metal sheet.

[0023] In one of the embodiments, the first slit and the second slit form a symmetrical pattern, and the center of the pattern coincides with the center of the shielding layer.

[0024] According to a second aspect of the embodiments of the present disclosure, a circuit board is further provided, which comprises the microwave device of any of the above embodiments.

[0025] The technical scheme provided by the embodiments of the present disclosure can include the following beneficial effects:

[0026] The circuit board adopts the microwave device, and microwave loss is low, which is beneficial to improve radiation performance.

[0027] According to a third aspect of the embodiments of the present disclosure, an electronic device is also provided, which includes the circuit board in the above embodiments.

[0028] The technical scheme provided by the embodiments of the present disclosure can include the following beneficial effects:

[0029] The electronic device adopts the microwave device or the circuit board, and microwave loss is low, which is beneficial to improve radiation performance, and further beneficial to improve product performance of the electronic device.

[0030] According to a fourth aspect of the embodiments of the present disclosure, a debugging method of a microwave device is also provided, which includes:

[0031] The first slit and the second slit are formed on the shielding layer, wherein the first slit is in the first direction, and the second slit is in the second direction, and the first direction intersects the second direction;

[0032] The shielding layer is arranged between the receiving layer and the radiation layer, and is insulated from the receiving layer and the radiation layer to form the device under test;

[0033] The first frequency selection range of the device under test is obtained;

[0034] If the first frequency selection range does not meet the required frequency selection range requirement, the total length of the slit in the first direction and / or the total length of the slit in the first direction is extended or shortened, or the width of the first slit and / or the width of the second slit is enlarged or reduced, until the first frequency selection range of the device under test meets the frequency selection range requirement.

[0035] The technical scheme provided by the embodiments of the present disclosure can include the following beneficial effects:

[0036] In this way, by using the debugging method of the microwave device, the total length of the slit in the first direction can be adjusted, that is, the length of the first slit is indirectly or directly extended, or the total length of the slit in the second direction can be adjusted, that is, the length of the second slit is indirectly or directly extended, or the width of the first slit and / or the width of the second slit is enlarged or reduced, to obtain the required frequency selection range. Compared with the prior art, the adjustment of the frequency selection range is more flexible. At the same time, when the frequency selection range is enlarged, the number of layers of the microwave device can be reduced, and thus the loss can be reduced.

[0037] The technical scheme will be further described below:

[0038] In one of the embodiments, the debugging method of the microwave device further includes:

[0039] obtaining a first phase difference range of the tested piece;

[0040] If the first phase difference range of the tested piece does not meet the required phase difference range requirement, the number of layers of the shielding layer is increased, or the number of layers of the receiving layer and the radiating layer is increased until the first phase range of the tested piece meets the phase range requirement. BRIEF DESCRIPTION OF DRAWINGS

[0041] The accompanying drawings, which are incorporated in and constitute a part of this disclosure, serve to provide further understanding of the disclosure, the illustrative embodiments of the disclosure, and their descriptions serve to explain the disclosure, and do not constitute improper limitations on the disclosure.

[0042] In order to more clearly illustrate the technical solutions in the embodiments of the disclosure, the drawings needed to be used in the embodiment description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the disclosure, and other drawings can also be obtained by those skilled in the art without creative labor on the basis of these drawings.

[0043] Figure 1 is a schematic half-section view of a microwave device shown in an embodiment.

[0044] Figure 2 is a schematic half-section view of a microwave device shown in an embodiment. Figure 1 is a schematic structure explosion view of a microwave device shown in an embodiment.

[0045] Figure 3 is a schematic structure explosion view of a microwave device in another embodiment.

[0046] Figure 4 is a schematic half-section view of a microwave device shown in another embodiment.

[0047] Figure 5 is a schematic half-section view of a microwave device shown in another embodiment.

[0048] Figure 6 is a schematic structure explosion view of a microwave device in another embodiment.

[0049] Figure 7 is a schematic structure explosion view of a microwave device in another embodiment.

[0050] Figure 8 is a schematic structure explosion view of a microwave device in another embodiment.

[0051] Figure 9 is a schematic structure explosion view of a microwave device in another embodiment.

[0052] Figure 10 is a schematic structure explosion view of a microwave device shown in an embodiment. Figure 1 is a schematic view of a microwave device shown in an embodiment applied to a circuit board.

[0053] Figure 11 For Figure 1 A schematic diagram of the microwave device shown in the electronic device.

[0054] Reference signs:

[0055] 100, microwave device; 110, receiving layer; 112, first frequency selective surface; 120, radiating layer; 122, second frequency selective surface; 101, metal patch; 102, first metal patch; 103, first transmission slot; 130, shielding layer; 132, first slot; 134, second slot; 136, coupling stub; 104, first extended slot; 105, second extended slot; 140, dielectric layer; 10, circuit board; 20, electronic device. DETAILED DESCRIPTION

[0056] In order to make the objects, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below with reference to the drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present disclosure and do not limit the protection scope of the present disclosure.

[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used in the description of the present disclosure herein is only for the purpose of describing specific embodiments and is not intended to limit the present disclosure.

[0058] Microwave devices can be divided into microwave oscillators (microwave sources), power amplifiers, mixers, filters, detectors, microwave antennas, microwave transmission lines, etc. according to their functions. Through circuit design, these microwave devices can be combined into various circuit boards with specific functions. At the same time, these microwave devices are assembled into or the circuit boards are assembled into antenna systems (such as transmitters, receivers, antenna base stations, routers, etc.), smart terminals (mobile phones, tablets, wearable devices, microwave induction devices, etc.) and other electronic devices.

[0059] In traditional microwave devices, the frequency range of the frequency selective surface is usually expanded by increasing the number of layers. However, the more layers there are, the greater the loss will be, which is not conducive to improving the overhead performance of the microwave device.

[0060] Based on the above, the present disclosure provides a microwave device. Compared with traditional microwave devices, the loss of the microwave device of the present disclosure is low within the same frequency selection range.

[0061] As Figure 1 and Figure 2 The structure view of the microwave device shown in an embodiment is shown. Among them, Figure 1Fig. 1 is a schematic view of a microwave device according to an embodiment of the present disclosure. Figure 2 Fig. 2 is a schematic view of a microwave device according to an embodiment of the present disclosure. Figure 1 Fig. 3 is a schematic view of a microwave device according to an embodiment of the present disclosure.

[0062] In the embodiment, the microwave device 100 includes a receiving layer 110, a radiating layer 120 and a shielding layer 130, the impedance of the radiating layer 120 is matched with the impedance of the receiving layer 110; the shielding layer 130 is arranged between the receiving layer 110 and the radiating layer 120, and is insulated from the receiving layer 110 and the radiating layer 120 respectively, the shielding layer 130 is provided with a first slit 132 and a second slit 134, the first slit 132 intersects with the second slit 134; wherein the receiving layer 110 is coupled with the radiating layer 120 through the first slit 132 and the second slit 134.

[0063] The microwave device 100 adjusts the size of the first slit 132 and the second slit 134 to expand the frequency range of the microwave device 100, which is beneficial to reduce the number of layers of the microwave device 100, and thus can reduce the loss.

[0064] Meanwhile, it can be understood that the adjustment of the frequency range of the microwave device 100 by adjusting the first slit 132 and the second slit 134 has less process requirements compared with the traditional technology, and can be realized by using the traditional microstrip processing technology, which is beneficial to reduce the manufacturing cost of the microwave device 100.

[0065] In addition, the adjustment of the frequency range by adjusting the first slit 132 and / or the second slit 134 has a large degree of freedom, which can meet the design of various types of microwave devices 100 and / or microwave devices 100 with different sizes.

[0066] It should be noted that the intersection of the extension direction of the first slit 132 and the extension direction of the second slit 134 includes the direct intersection of the first slit 132 and the second slit 134, or the intersection of the extension direction of the first slit 132 and the second slit 134, or the intersection of the extension direction of the first slit 132 and the second slit 134.

[0067] For example, in an exemplary embodiment, the first slit 132 is in a first direction, and the second slit 134 is in a second direction, the first direction intersects with the second direction.

[0068] It should be noted that the lengths of the "first slit 132" and the "second slit 134" can be selected according to the characteristics of the microwave device 100, and their length ranges from 0mm to 10mm. For example, the lengths of the "first slit 132" and / or the "second slit 134" are 1mm, 2mm, 4mm, 6mm, 8mm, 10mm, etc.

[0069] It should be noted that there are various ways to implement the "insulation setting" between the shielding layer 130 and the receiving layer 110 and the radiating layer 120, including insulation methods used in the manufacturing process of the circuit board 10. For example, it can be implemented using a substrate (dielectric layer 140).

[0070] like Figure 1 As shown, in some embodiments, the microwave device 100 further includes a dielectric layer 140, with the shielding layer 130 and the receiving layer 110 insulated from each other by at least one dielectric layer 140; and / or, the shielding layer 130 and the radiating layer 120 are insulated from each other by at least one dielectric layer 140. Thus, the microwave device 100 of this disclosure can be manufactured using the manufacturing method of printed circuit board 10, which is beneficial for mass production. In particular, it can be manufactured using the manufacturing method of printed circuit board 10, which is beneficial for improving the precision of the microwave device 100 of this disclosure, thereby improving the radiation performance of the microwave device 100.

[0071] It should be noted that the material of "shielding layer 130" includes, but is not limited to, materials with electromagnetic shielding properties such as metal.

[0072] A specific embodiment of the “dielectric layer 140” includes a substrate.

[0073] It should be noted that there are multiple ways to implement the "receiving layer 110" and the "radiating layer 120", including but not limited to frequency selective surfaces.

[0074] like Figures 2 to 5 The figures shown are structural views of the microwave device 100 illustrated in some embodiments. Among them, Figure 2 for Figure 1 An exploded view of the structure of the microwave device 100 shown. Figure 3 This is an exploded view of the structure of the microwave device 100 in another embodiment. Figure 4 This is a half-sectional schematic diagram of the microwave device 100 shown in another embodiment. Figure 5 This is a half-sectional schematic diagram of the microwave device 100 shown in another embodiment.

[0075] In some embodiments, the receiving layer 110 includes a first frequency selective surface 112. Thus, the first frequency selective surface 112 can be used to receive microwaves, making the design of the receiving layer 110 more flexible and capable of meeting the needs of receiving microwaves at different frequencies.

[0076] And / or, in some embodiments, the radiation layer 120 comprises a second frequency selective surface 122. In this way, the radiation of microwaves can be achieved by using the second frequency selective surface 122, so that the design of the radiation layer 120 is more flexible and can meet the microwave radiation of different frequencies.

[0077] Meanwhile, the manufacturing of the microwave device 100 of the present disclosure is carried out by using the first frequency selective surface 112 and the second frequency selective surface 122, which is advantageous to improve the yield and reduce the cost of the microwave device 100 of the present disclosure. Also, the range of the phase difference of the microwave device 100 of the present disclosure can be larger. In this way, the microwave device 100 of the present disclosure has a large frequency selection range and a large phase selection range, and the antenna composed of the microwave device 100 of the present disclosure has a wider bandwidth, which is advantageous to improve the performance of the antenna and further improve the performance of the electronic device 20 provided with the antenna. For example, the microwave device 100 of the present disclosure can be used for local optimization of spherical waves, thereby realizing a larger beam shaping capability.

[0078] On the basis of the above-mentioned embodiments, in some embodiments, the first frequency selective surface 112 and the second frequency selective surface 122 are microstrip patches; or the first frequency selective surface 112 and the second frequency selective surface 122 comprise a first metal sheet 102 and a first transmission gap 103 arranged on the first metal sheet 102; or one of the first frequency selective surface 112 and the second frequency selective surface 122 is a microstrip patch, and the other comprises a second metal sheet and a second transmission gap arranged on the second metal sheet. In this way, the microwave device 100 of the present disclosure can be combined with various frequency selective surfaces to meet different requirements.

[0079] In some embodiments, the radiation layer 120 can also comprise a metal sheet and a first gap 132 and a second gap 134 arranged on the metal sheet.

[0080] On the basis of the above-mentioned embodiments, the first frequency selective surface 112 is at least two layers and is stacked in turn; and / or the second frequency selective surface 122 is at least two layers and is stacked in turn. In this way, the coupling freedom of the microwave device 100 of the present disclosure can be improved, which is advantageous to meet the design of high-phase microwave devices 100 (such as microwave devices 100 with a phase requirement > 360°, even > 500°).

[0081] It can be understood that when the order of the first frequency selective surface 112 and / or the second frequency selective surface 122 is continuously increased, that is, the equivalent LC filtering characteristics thereof are not equivalent to one inductor and one capacitor, the overall freedom of coupling will be further increased, and by appropriately selecting the size of the frequency selective surface, the radiation loss of the microwave device 100 can be further reduced, so that the microwave device 100 of the present disclosure has a larger phase range and lower loss and better performance.

[0082] Of course, in addition to adjusting the microwave device 100 by changing the number of layers of the receiving layer 110 and the radiation layer 120. In other embodiments, the adjustment of the phase difference of the microwave device 100 of the present disclosure can also be achieved by changing the number of layers of the shielding layer 130.

[0083] As shown in Figure 4 and Figure 5 In some embodiments, the shielding layer 130 is at least two layers, and is sequentially stacked between the receiving layer 110 and the radiation layer 120. In this way, the phase difference of the microwave device 100 can be adjusted by setting at least two layers of the shielding layer 130, and the optimization of the frequency selection range of the microwave device 100 can also be performed.

[0084] Of course, the number of layers of the receiving layer 110, the number of layers of the radiation layer 120, and the number of layers of the shielding layer 130 can be flexibly combined to improve the design flexibility of the microwave device 100 of the present disclosure, and further meet various types of microwave devices 100 and / or different sizes of microwave devices 100.

[0085] It should be noted that the two adjacent "frequency selective surfaces" can be directly stacked or separated by a dielectric layer 140.

[0086] Similarly, the two adjacent "radiation layers 120" can be directly stacked or separated by a dielectric layer 140.

[0087] On the basis of any of the above embodiments, in some embodiments, the first slit 132 and the second slit 134 are in a strip shape and are arranged in a cross shape. In this way, the use of strip-shaped slits is beneficial to reduce the loss, and the cross arrangement is convenient for optimization, so that the performance of the microwave device 100 of the present disclosure is better.

[0088] On the basis of the above embodiments, in some embodiments, the first slit 132 and the second slit 134 are arranged perpendicular to each other. In this way, the first slit 132 is arranged along the first direction (such as the X direction or the horizontal direction), and the second slit 134 is arranged along the second direction (such as the Y direction or the vertical direction), which is convenient for regular adjustment (including length and width adjustment) of the first slit 132 and the second slit 134, so that the radiation performance of the microwave device 100 of the present disclosure is better.

[0089] As shown in Figures 6 to 8 is a structure explosion view of the microwave device 100 shown in some embodiments. Among them, Figure 6 is a structure explosion view of the microwave device 100 in another embodiment. Figure 7 is a structure explosion view of the microwave device 100 in another embodiment. Figure 8An exploded schematic view of the structure of the microwave device 100 in another embodiment. Figure 9 An exploded schematic view of the structure of the microwave device 100 in another embodiment.

[0090] On the basis of any of the above embodiments, as shown in Figure 6 In some embodiments, the shielding layer 130 further comprises a coupling branch 136, which is arranged on the first slit 132 and / or the second slit 134. In this way, the coupling branch 136 can reduce the loss at the edge and improve the frequency selection range under the same size of the first slit 132 and the second slit 134, further improve the radiation effect of the microwave device 100 of the present disclosure, and improve the performance.

[0091] On the basis of any of the above embodiments, as shown in Figures 7 to 9 In some embodiments, the coupling branch 136 comprises a first extended slit 104, which is arranged in parallel with the first slit 132 and connected to the second slit 134; and a second extended slit 105, which is arranged in parallel with the second slit 134 and connected to the first slit 132, and the second extended slit 105 is arranged on the shielding layer 130 in parallel with the first extended slit 104. In this way, the length of the first slit 132 is indirectly extended by the first extended slit 104, and the length of the second slit 134 is indirectly extended by the second extended slit 105, so as to expand the frequency selection range of the microwave device 100 of the present disclosure.

[0092] In some embodiments, the first extended slit 104 is at least two, and the second extended slit 105 is at least two. In this way, the length and number of the first extended slit 104 and the length and number of the second extended slit 105 are adjusted to expand the frequency selection range of the microwave device 100 of the present disclosure, and the loss is reduced.

[0093] On the basis of any of the above embodiments, in some embodiments, the first slit 132 and / or the second slit 134 is a microstrip slit. In this way, the reliability of the microwave device 100 of the present disclosure is improved, and the manufacturing cost is reduced.

[0094] On the basis of any of the above embodiments, in some embodiments, the first slit 132 is at least two and arranged in parallel with each other; and / or, the second slit 134 is at least two and arranged in parallel with each other. In this way, the frequency selection range of the microwave device 100 can be flexibly expanded, and the design of the microwave device 100 of the present disclosure is more flexible and has less loss.

[0095] In any of the above embodiments, in some embodiments, the first slot 132 and the second slot 134 form a symmetrical pattern, and the center of the pattern coincides with the center of the shielding layer 130. In this way, the microwave device 100 of the present disclosure is optimized at the beginning of the design, interference is reduced, and it is easier to obtain adjustment rules, and then the length, width or depth of the first slot 132 and the second slot 134 can be adjusted according to actual needs to obtain the required microwave device.

[0096] For example, the first slot 132 and the second slot 134 form a "cross" pattern (as shown in Figure 3 ), or form a "Jerusalem" pattern (as shown in Figure 7 ), and the like.

[0097] As shown in Figure 1 and Figure 10 , in some embodiments, a circuit board 10 is provided, which includes the microwave device 100 of any of the above embodiments.

[0098] The above-mentioned circuit board 10 uses the above-mentioned microwave device 100, and the microwave loss is low, which is beneficial to improve the radiation performance.

[0099] In this way, through circuit design, the microwave device 100 of the present disclosure can be integrated into various types of circuit boards 10, which corresponds to improve the radiation performance of various circuit boards 10 with specific functions.

[0100] As shown in Figure 1 and Figure 11 , in some embodiments, an electronic device 20 is provided, which includes the microwave device 100 of any of the above embodiments or the circuit board 10 of the above embodiments.

[0101] The above-mentioned electronic device 20 uses the above-mentioned microwave device 100 or the circuit board 10, and the microwave loss is low, which is beneficial to improve the radiation performance, and further beneficial to improve the product performance of the electronic device 20.

[0102] In this way, the microwave device 100 of the present disclosure is assembled into an antenna system (such as a transmitter, a receiver, an antenna base station, a router, etc.), a smart terminal (a mobile phone, a tablet computer, a wearable device, a microwave induction device, etc.) or an electronic device 20, which is beneficial to improve the radiation performance of these electronic devices 20.

[0103] In some embodiments, a debugging method of a microwave device is provided, which includes:

[0104] A first slot and a second slot are formed on the shielding layer, wherein the first slot is in a first direction, the second slot is in a second direction, and the first direction intersects the second direction;

[0105] The shielding layer is arranged between the receiving layer and the radiation layer and is insulated from the receiving layer and the radiation layer to form the tested piece;

[0106] A first frequency selection range of the tested piece is obtained.

[0107] If the first frequency selection range does not meet the required frequency selection range requirement, the total length of the slot in the first direction and / or the total length of the slot in the first direction is extended or shortened, or the width of the first slot and / or the width of the second slot is enlarged or reduced until the first frequency selection range of the tested piece meets the frequency selection range requirement.

[0108] In this way, by using the debugging method of the microwave device, the required frequency selection range can be obtained by adjusting the total length of the slot in the first direction, i.e., indirectly or directly extending the length of the first slot, or by adjusting the total length of the slot in the second direction, i.e., indirectly or directly extending the length of the second slot, or by enlarging or reducing the width of the first slot and / or the width of the second slot. Compared with the conventional technology, the adjustment of the frequency selection range is more flexible. At the same time, when the frequency selection range is enlarged, the number of layers of the microwave device can be reduced, thereby reducing the loss.

[0109] With reference to the foregoing embodiments of the microwave device, the total length of the slot in the first direction includes adjusting the length of the first slot and / or adjusting the number of the first extended slots. The total length of the slot in the second direction includes adjusting the length of the second slot and / or adjusting the number of the second extended slots.

[0110] On the basis of any of the foregoing embodiments, in some embodiments, the debugging method of the microwave device further includes:

[0111] A first phase difference range of the tested piece is obtained.

[0112] If the first phase difference range does not meet the required phase difference range requirement, the number of layers of the shielding layer is increased, or the number of layers of the receiving layer and the radiation layer is increased until the first phase range of the tested piece meets the phase range requirement.

[0113] In this way, the number of layers of the receiving layer and the radiation layer and the number of layers of the radiation layer can be flexibly combined to improve the flexibility of the debugging of the microwave device of the present disclosure, so that the frequency selection range and the phase selection range of the microwave device designed by using the debugging method of the microwave device of the present disclosure are large, and the loss is small. The antenna composed of the microwave device has a wider bandwidth, which is beneficial to improving the performance of the antenna, thereby improving the performance of the electronic equipment provided with the antenna. For example, the microwave device designed by using the debugging method of the microwave device of the present disclosure can be locally optimized for spherical waves, thereby realizing a larger beam shaping capability.

[0114] In the description of the present disclosure, it needs to be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present disclosure and simplifying the description, and does not indicate or imply that the device or element indicated thereby must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present disclosure.

[0115] In addition, the terms "first", "second", and the like are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated thereby. Therefore, the features defined with "first", "second", and the like can explicitly or implicitly include at least one of the features. In the description of the present disclosure, the meaning of "a plurality of" is at least two, such as two, three, and the like, unless otherwise explicitly specified and limited.

[0116] In the present disclosure, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present disclosure can be understood according to the specific circumstances.

[0117] In the present disclosure, unless otherwise explicitly specified and limited, the first feature "on" or "under" the second feature can be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature "above", "over" and "on" the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "under" and "under" the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0118] The technical features of the above embodiments can be combined in any way. In order to make the description concise, not all possible combinations of the technical features in the above embodiments are described, but as long as the combination of the technical features does not exist contradictory, it should be considered as the scope of the present disclosure.

[0119] The above embodiments only express several implementation ways of the present disclosure, and the description is specific and detailed, but it should not be understood as a limitation to the scope of the patent. It should be pointed out that for ordinary skilled in the art, several modifications and improvements can be made without departing from the concept of the present disclosure, which are all within the protection scope of the present disclosure.

Claims

1. A microwave device, characterized in that, include: The receiving layer includes a first frequency selection surface; A radiating layer, the impedance of which is matched with the impedance of the receiving layer; and A shielding layer is sandwiched between the receiving layer and the radiating layer, and is insulated from both the receiving layer and the radiating layer. The shielding layer has a first gap and a second gap, and the extension direction of the first gap intersects the extension direction of the second gap. The receiving layer is coupled to the radiating layer through the first gap and the second gap; Adjusting the dimensions of the first and second gaps can expand the frequency selectivity range of the microwave device.

2. The microwave device according to claim 1, characterized in that, The first gap and the second gap are strip-shaped and intersect each other.

3. The microwave device according to claim 2, characterized in that, The first gap and the second gap are set perpendicular to each other.

4. The microwave device according to claim 3, characterized in that, The shielding layer further includes coupling branches, which are disposed on the first gap and / or the second gap.

5. The microwave device according to claim 4, characterized in that, The coupling spur includes a first extended slit, which is parallel and spaced apart from the first slit and connected to the second slit; And / or, the coupling spur further includes a second extended slit, which is parallel to and spaced apart from the first slit and connected to the first slit, and is spaced apart from the first extended slit in the shielding layer.

6. The microwave device according to claim 1, characterized in that, The first gap and / or the second gap are microstrip gaps.

7. The microwave device according to claim 1, characterized in that, The first gap is at least two, and they are arranged in parallel to each other; and / or, the second gap is at least two, and they are arranged in parallel to each other.

8. The microwave device according to claim 1, characterized in that, The microwave device further includes a dielectric layer, and the shielding layer is insulated from the receiving layer by at least one dielectric layer, and / or the shielding layer is insulated from the radiating layer by at least one dielectric layer.

9. The microwave device according to claim 1, characterized in that, The shielding layer consists of at least two layers, which are stacked and sandwiched between the receiving layer and the radiating layer.

10. The microwave device according to claim 1, characterized in that, The radiation layer includes a second frequency-selective surface.

11. The microwave device according to claim 10, characterized in that, The first frequency selection surface has at least two layers, which are stacked sequentially; and / or, the second frequency selection surface has at least two layers, which are stacked sequentially.

12. The microwave device according to claim 10, characterized in that, The first frequency selection surface and the second frequency selection surface are microstrip patches; Alternatively, the first frequency selection surface and the second frequency selection surface may include a first metal sheet and a first transmission slit disposed on the first metal sheet; Alternatively, one of the first frequency selection surface and the second frequency selection surface may be a microstrip patch, and the other may include a second metal sheet and a second transmission slit disposed on the second metal sheet.

13. The microwave device according to any one of claims 1 to 12, characterized in that, The first gap and the second gap form a symmetrical pattern, and the center of the pattern coincides with the center of the shielding layer.

14. A circuit board, characterized in that, Includes the microwave device as described in any one of claims 1 to 13.

15. An electronic device, characterized in that, Includes the microwave device as described in any one of claims 1 to 13, or the circuit board as described in claim 14.

16. A method for debugging a microwave device, characterized in that, The debugging method, applied to the microwave device according to any one of claims 1 to 13, comprises: A first gap and a second gap are made in the shielding layer, wherein the first gap is in a first direction and the second gap is in a second direction, and the first direction and the second direction intersect. The shielding layer is sandwiched between the receiving layer and the radiating layer, and is insulated from both the receiving layer and the radiating layer to form the test piece; Obtain the first frequency selection range of the test piece; If the first frequency selection range does not meet the required frequency selection range, the total length of the gap in the first direction and / or the total length of the gap in the first direction shall be extended or shortened, or the width of the first gap and / or the width of the second gap shall be expanded or reduced, until the first frequency selection range of the test piece meets the frequency selection range requirements.

17. The debugging method for a microwave device according to claim 16, characterized in that, The debugging method for the microwave device also includes: Obtain the first phase difference range of the test piece; If the first phase difference range does not meet the required phase difference range, the number of shielding layers is increased, or the number of receiving and radiating layers is increased, until the first phase range of the tested device meets the phase range requirement.

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