Method of semiconductor processing

Abstract

The application relates to the technical field of semiconductors, and discloses a semiconductor processing method, which comprises the following steps: placing a semiconductor on a grinding disc to perform first thinning treatment, so that the substrate of the semiconductor is thinned to a preset thickness; the particle size of the diamond particles on the grinding disc in the first thinning treatment is 450-550 mu m; and the semiconductor is placed on the grinding disc to perform second thinning treatment, so that the substrate of the semiconductor is 0.25-0.3 mu m higher than the nickel-iron part of the semiconductor; the particle size of the diamond particles on the grinding disc in the second thinning treatment is 4-6 nm; and in the second thinning treatment, a laser beam is used to irradiate the nickel-iron part of the semiconductor, so that the nickel-iron part of the semiconductor protrudes from the top surface of the substrate of the semiconductor and is mainly ground during grinding, and the surface of the substrate of the semiconductor does not bear too much grinding, so that the grinding is targeted, and the nickel-iron part of the semiconductor can easily meet the requirements in terms of height change and polishing precision.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a method for processing semiconductor. BACKGROUND

[0002] At present, the polishing of semiconductor components is usually fine grinding, that is, removing the mechanical and physical scratches on the surface of the wafer. However, due to the difference of the surface material of the semiconductor, the main component of the substrate is silicon dioxide, which is relatively hard; the substrate contains a nickel-iron component in the induction coil, which is relatively soft. The technical requirement of fine grinding and polishing is that the surface of the substrate needs to be higher than the surface of the nickel-iron by 0.25-0.3um. Therefore, if the diamond particles of the grinding fluid are large, it will cause scratches on the surface of the nickel-iron, and also cause the nickel-iron material to be too high above the silicon dioxide substrate. If the diamond particles are small, the nickel-iron material will be ground too much, and finally the plane will be too low above the silicon dioxide substrate. SUMMARY

[0003] The purpose of the embodiment of the present application is to provide a method for processing semiconductor, which can obtain good grinding effect of the semiconductor.

[0004] In order to solve the above technical problems, the embodiment of the present application provides a method for processing semiconductor, comprising:

[0005] Placing the semiconductor on the grinding disc for the first thinning treatment, so that the substrate of the semiconductor is thinned by a preset thickness; wherein the particle size of the diamond particles on the grinding disc in the first thinning treatment is 450-550um;

[0006] Placing the semiconductor on the grinding disc for the second thinning treatment, so that the substrate of the semiconductor is higher than the nickel-iron part of the semiconductor by 0.25-0.3um; wherein the particle size of the diamond particles on the grinding disc in the second thinning treatment is 4-6nm, and in the second thinning treatment, a laser beam is used to irradiate the nickel-iron part of the semiconductor, so that the nickel-iron part of the semiconductor protrudes from the top surface of the substrate of the semiconductor.

[0007] As a preferred scheme, in the second thinning treatment, a laser generator is used to emit the laser beam, the wavelength range of the emitted laser is 200nm, the diameter of the laser beam is 0.1-2um, the laser power range is 0.5-1W, and the laser irradiation time is 4-6 seconds.

[0008] As a preferred scheme, the laser power range is 0.7-0.9W.

[0009] As a preferred scheme, in the second thinning treatment, the laser irradiation time is 5 seconds.

[0010] As a preferred solution, the particle size of the diamond particles on the polishing disc in the first thinning treatment is 500 μm, and the rotation speed of the polishing disc in the first thinning treatment is 50 rpm.

[0011] As a preferred solution, the particle size of the diamond particles on the polishing disc in the second thinning treatment is 5 nm, and the rotation speed of the polishing disc in the second thinning treatment is 10 rpm.

[0012] As a preferred solution, the preset thickness is 30 μm.

[0013] As a preferred solution, the PH value of the polishing liquid used by the polishing disc in the first thinning treatment and the second thinning treatment is 10.

[0014] As a preferred solution, before the step of placing the semiconductor on the polishing disc to perform the second thinning treatment and making the base of the semiconductor higher than the nickel-iron part of the semiconductor by 0.25-0.3 μm, the method further comprises:

[0015] placing the semiconductor in deionized water and cleaning the semiconductor by ultrasonic oscillation for 20 minutes;

[0016] drying the cleaned semiconductor.

[0017] As a preferred solution, after the step of placing the semiconductor on the polishing disc to perform the second thinning treatment and making the base of the semiconductor higher than the nickel-iron part of the semiconductor by 0.25-0.3 μm, the method further comprises:

[0018] placing the semiconductor in deionized water and cleaning the semiconductor by ultrasonic oscillation for 20 minutes;

[0019] drying the cleaned semiconductor.

[0020] Compared with the prior art, the embodiment of the present application has the beneficial effects that the embodiment of the present application provides a semiconductor processing method, by placing the semiconductor on the polishing disc to perform the first thinning treatment and making the base of the semiconductor thinned by a preset thickness; wherein the particle size of the diamond particles on the polishing disc in the first thinning treatment is 450-550 μm; and placing the semiconductor on the polishing disc to perform the second thinning treatment and making the base of the semiconductor higher than the nickel-iron part of the semiconductor by 0.25-0.3 μm; wherein the particle size of the diamond particles on the polishing disc in the second thinning treatment is 4-6 nm, and in the second thinning treatment, the nickel-iron part of the semiconductor is irradiated by a laser beam to make the nickel-iron part of the semiconductor protrude from the top surface of the base of the semiconductor, so that in the grinding process, the nickel-iron part of the semiconductor becomes the main part to be ground, and the surface of the base of the semiconductor does not bear too much grinding, thereby targeted grinding is performed, so that the nickel-iron part of the semiconductor can easily meet the requirements in terms of height change and polishing precision, and thus the semiconductor obtains good grinding effect.BRIEF DESCRIPTION OF DRAWINGS BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 is a flow chart of the method for semiconductor processing in the embodiment of the present application. DETAILED DESCRIPTION

[0022] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application.

[0023] Please refer to Figure 1 is a flow chart of the method for semiconductor processing in the embodiment of the present application.

[0024] The method for semiconductor processing in the embodiment of the present application comprises:

[0025] In step S101, the semiconductor is placed on a grinding disc for first thinning processing, so that the substrate of the semiconductor is thinned by a preset thickness; wherein the particle size of the diamond particles on the grinding disc in the first thinning processing is 450-550 μm.

[0026] In step S102, the semiconductor is placed on a grinding disc for second thinning processing, so that the substrate of the semiconductor is higher than the nickel-iron part of the semiconductor by 0.25-0.3 μm; wherein the particle size of the diamond particles on the grinding disc in the second thinning processing is 4-6 nm, and in the second thinning processing, a laser beam is used to irradiate the nickel-iron part of the semiconductor, so that the nickel-iron part of the semiconductor is protruded from the top surface of the substrate of the semiconductor by heating.

[0027] In the embodiment of the present application, the semiconductor is placed on a grinding disc for first thinning processing, so that the substrate of the semiconductor is thinned by a preset thickness; wherein the particle size of the diamond particles on the grinding disc in the first thinning processing is 450-550 μm; and the semiconductor is placed on a grinding disc for second thinning processing, so that the substrate of the semiconductor is higher than the nickel-iron part of the semiconductor by 0.25-0.3 μm; wherein the particle size of the diamond particles on the grinding disc in the second thinning processing is 4-6 nm, and in the second thinning processing, a laser beam is used to irradiate the nickel-iron part of the semiconductor, so that the nickel-iron part of the semiconductor is protruded from the top surface of the substrate of the semiconductor by heating. Therefore, in the grinding, the nickel-iron part of the semiconductor becomes the main part to be ground, and the surface of the substrate of the semiconductor does not bear too much grinding, so that the grinding is targeted, and the nickel-iron part of the semiconductor can easily meet the requirements in terms of height change and polishing precision, and thus the semiconductor obtains good grinding effect.

[0028] The main component of the substrate of the semiconductor is silicon dioxide, which is hard; the inductive coil containing nickel-iron component in the substrate is soft. Before the first thinning treatment, the semiconductor can be measured, and generally the test shows that the plane of the nickel-iron part of the semiconductor is 1-2 μm higher than the surface of the substrate of the semiconductor, and the preset thickness in this embodiment is 30 μm. In the first thinning treatment, the semiconductor element is placed on the grinding disc for thinning. Preferably, the particle size of the diamond particles on the grinding disc is 500 μm, and the rotation speed of the grinding disc is 50 rpm. This step is to thin the silicon dioxide substrate by 30 μm, but the surface of the nickel-iron coil is damaged to a greater extent. Most importantly, the surface of the nickel-iron is higher than the silicon dioxide substrate, and the height difference between the two surfaces is 2-3 μm. Under this operation condition, it is shown that the processing amount of the nickel-iron surface is less than that of the silicon dioxide substrate, thus causing the height difference to increase.

[0029] In an alternative embodiment, after the first thinning treatment, before the step S102 of "placing the semiconductor on the grinding disc for the second thinning treatment, so that the substrate of the semiconductor is 0.25-0.3 μm higher than the nickel-iron part of the semiconductor", it further comprises:

[0030] placing the semiconductor in deionized water and cleaning it by ultrasonic oscillation for 20 minutes;

[0031] drying the cleaned semiconductor.

[0032] In an alternative embodiment, in the second thinning treatment, the semiconductor element is placed on the grinding disc for thinning, and at this time, the nickel-iron part is irradiated by laser, and at this time, the nickel-iron material is elongated by heating. The laser beam is emitted by a laser generator, which is a pulsed laser. The wavelength of the emitted laser is 200 nm, the diameter of the laser beam is 0.1-2 μm, the laser power is 0.5-1 W, and the laser irradiation time is 4-6 seconds, for example, 4 seconds, 5 seconds, 6 seconds, etc., and preferably 5 seconds. Preferably, the laser power is 0.7-0.9 W, the particle size of the diamond particles on the grinding disc in the second thinning treatment is 5 nm, and the rotation speed of the grinding disc in the second thinning treatment is 10 rpm. The particle size of the diamond particles on the grinding disc is about 5 nm, and this step is a polishing thinning. The expected thickness of the thinned semiconductor is 5 nm. Since the surface of the nickel-iron is protruded by heating in this step, it will become the main part to be ground, and the surface of the silicon dioxide substrate will not bear much grinding. Therefore, the purposeful grinding can easily meet the requirements of the nickel-iron surface in terms of height change and polishing accuracy.

[0033] In addition, the polishing disc material in the embodiment of the present application is a tin disc. The PH value of the polishing liquid used by the polishing disc in the first thinning process and the second thinning process is 10. The polishing liquid is mainly an alkaline solution, mainly ammonium hydroxide, with a PH value of 10. If the PH value cannot meet the requirements, sodium hydroxide can be used for proportioning adjustment.

[0034] In an alternative embodiment, after the step S102 "putting the semiconductor into the polishing disc for the second thinning process, making the substrate of the semiconductor higher than the nickel-iron part of the semiconductor by 0.25-0.3 μm", it further comprises:

[0035] putting the semiconductor into deionized water and cleaning it by ultrasonic oscillation for 20 minutes;

[0036] drying the cleaned semiconductor.

[0037] The method for processing the semiconductor provided by the embodiment of the present application will be described in detail below in combination with the following embodiments:

[0038] Embodiment one

[0039] measuring that the plane of the nickel-iron part of the semiconductor is 1-2 μm higher than the surface of the silicon dioxide substrate, first putting the semiconductor into the polishing disc for the first thinning, the particle size of the diamond particles on the polishing disc being 500 μm, the rotation speed of the polishing disc being 50 rpm, which can make the silicon dioxide substrate thinned by 30 μm; then putting the semiconductor into the polishing disc for the second thinning, the particle size of the diamond particles on the polishing disc being 5 nm, at this time, a pulse laser is used to generate laser to irradiate the nickel-iron part, the wavelength range of the emitted laser being 200 nm, the laser beam diameter being 0.1-2 μm, the laser power range being 0.5-0.6 W, and the irradiation time being 5 seconds.

[0040] Embodiment two

[0041] measuring that the plane of the nickel-iron part of the semiconductor is 1-2 μm higher than the surface of the silicon dioxide substrate, first putting the semiconductor into the polishing disc for the first thinning, the particle size of the diamond particles on the polishing disc being 500 μm, the rotation speed of the polishing disc being 50 rpm, which can make the silicon dioxide substrate thinned by 30 μm; then putting the semiconductor into the polishing disc for the second thinning, the particle size of the diamond particles on the polishing disc being 5 nm, at this time, a pulse laser is used to generate laser to irradiate the nickel-iron part, the wavelength range of the emitted laser being 200 nm, the laser beam diameter being 0.1-2 μm, the laser power range being 0.6-0.7 W, and the irradiation time being 5 seconds.

[0042] Embodiment three

[0043] The plane of the nickel-iron part of the semiconductor is 1-2 μm higher than the surface of the silicon dioxide substrate. The semiconductor is first placed on a grinding disc for first thinning. The particle size of the diamond particles on the grinding disc is 500 μm, and the rotation speed of the grinding disc is 50 rpm. This step can thin the silicon dioxide substrate by 30 μm. The semiconductor is then placed on a grinding disc for second thinning. The particle size of the diamond particles on the grinding disc is 5 nm. At this time, a pulsed laser is used to generate laser light to irradiate the nickel-iron part. The wavelength of the emitted laser light is 200 nm, the diameter of the laser beam is 0.1-2 μm, the laser power is 0.7-0.8 W, and the irradiation time is 5 seconds.

[0044] Example Four

[0045] The plane of the nickel-iron part of the semiconductor is 1-2 μm higher than the surface of the silicon dioxide substrate. The semiconductor is first placed on a grinding disc for first thinning. The particle size of the diamond particles on the grinding disc is 500 μm, and the rotation speed of the grinding disc is 50 rpm. This step can thin the silicon dioxide substrate by 30 μm. The semiconductor is then placed on a grinding disc for second thinning. The particle size of the diamond particles on the grinding disc is 5 nm. At this time, a pulsed laser is used to generate laser light to irradiate the nickel-iron part. The wavelength of the emitted laser light is 200 nm, the diameter of the laser beam is 0.1-2 μm, the laser power is 0.7-0.8 W, and the irradiation time is 5 seconds.

[0046] In the above examples, the nickel-iron material is heated to elongate and protrude from the silicon dioxide substrate to a height as follows:

[0047] Power (W) Nickel-iron layer increase height (nm) 0.5-0.6 3 0.6-0.7 5 0.7-0.8 16 0.8-0.9 20

[0048] Compared with the prior art, the embodiment of the present application has the beneficial effect that the embodiment of the present application provides a semiconductor processing method. The semiconductor is first placed on a grinding disc for first thinning to thin the substrate of the semiconductor to a predetermined thickness. The particle size of the diamond particles on the grinding disc in the first thinning is 450-550 μm. The semiconductor is then placed on a grinding disc for second thinning to make the substrate of the semiconductor 0.25-0.3 μm higher than the nickel-iron part of the semiconductor. The particle size of the diamond particles on the grinding disc in the second thinning is 4-6 nm. In the second thinning, a laser beam is used to irradiate the nickel-iron part of the semiconductor to heat the nickel-iron part to protrude from the top surface of the substrate of the semiconductor. Thus, in the grinding, the nickel-iron part of the semiconductor becomes the main part to be ground, and the surface of the substrate of the semiconductor does not bear too much grinding. Therefore, the grinding is targeted, and the nickel-iron part of the semiconductor can easily meet the requirements in terms of height change and polishing precision. Thus, the semiconductor can obtain good grinding effect.

[0049] The above merely describes the preferred embodiments of the present application, and it should be pointed out that, for those skilled in the art, several improvements and replacements can be made without departing from the technical principles of the present application, and these improvements and replacements should also be considered as the protection scope of the present application.

Claims

1. A method of semiconductor processing, characterized by, Comprising: putting the semiconductor on a grinding disc to perform a first thinning process to thin the base of the semiconductor to a preset thickness; wherein the particle size of the diamond particles on the grinding disc in the first thinning process is 450-550 μm; putting the semiconductor on a grinding disc to perform a second thinning process to make the base of the semiconductor higher than the nickel-iron part of the semiconductor by 0.25-0.3 μm; wherein the particle size of the diamond particles on the grinding disc in the second thinning process is 4-6 nm, and in the second thinning process, a laser beam is used to irradiate the nickel-iron part of the semiconductor to make the nickel-iron part of the semiconductor protrude from the top surface of the base of the semiconductor by heating.

2. The method of semiconductor processing of claim 1, wherein, In the second thinning process, the laser generator is used to emit the laser beam, the wavelength range of the emitted laser is 200 nm, the diameter of the laser beam is 0.1-2 μm, the laser power range is 0.5-1 W, and the laser irradiation time is 4-6 seconds.

3. The method of semiconductor processing of claim 2, wherein, The laser power range is 0.7-0.9 W.

4. The method of semiconductor processing of claim 2, wherein, In the second thinning process, the laser irradiation time is 5 seconds.

5. The method of semiconductor processing of any of claims 1-4, wherein, The particle size of the diamond particles on the grinding disc in the first thinning process is 500 μm, and the rotation speed of the grinding disc in the first thinning process is 50 rpm.

6. The method of semiconductor processing of any of claims 1-4, wherein, The particle size of the diamond particles on the grinding disc in the second thinning process is 5 nm, and the rotation speed of the grinding disc in the second thinning process is 10 rpm.

7. The method of semiconductor processing of any of claims 1-4, wherein, The preset thickness is 30 μm.

8. The method of semiconductor processing of any of claims 1-4, wherein, The PH value of the grinding liquid used by the grinding disc in the first thinning process and the second thinning process is 10.

9. The method of semiconductor processing of any of claims 1-4, wherein, Before the step of putting the semiconductor on a grinding disc to perform a second thinning process to make the base of the semiconductor higher than the nickel-iron part of the semiconductor by 0.25-0.3 μm, further comprising: putting the semiconductor into deionized water and cleaning for 20 minutes by ultrasonic oscillation; drying the cleaned semiconductor.

10. The method of semiconductor processing of any of claims 1-4, wherein, After the step of putting the semiconductor on a grinding disc to perform a second thinning process to make the base of the semiconductor higher than the nickel-iron part of the semiconductor by 0.25-0.3 μm, further comprising: putting the semiconductor into deionized water and cleaning for 20 minutes by ultrasonic oscillation; drying the cleaned semiconductor.

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