A purple phosphorene / graphene temperature sensitive sensor and preparation method thereof

Abstract

The invention discloses a purple phosphorene / graphene temperature-sensitive sensor and a preparation method thereof. A graphene film is prepared by chemical vapor deposition, the graphene film and purple phosphorene are composited to form a heterojunction, an electrode is prepared on the graphene film of the heterojunction, and a purple phosphorene / graphene temperature-sensitive sensor with high temperature sensitivity is obtained, which can respond to temperature quickly and efficiently.

Description

Technical Field

[0001] The invention belongs to the technical field of sensors, and in particular relates to a purple phosphorene / graphene temperature-sensitive sensor and a preparation method thereof. Background Art

[0002] Purple phosphorus, also known as Hittorf phosphorus, is a layered single phosphorus structure with unique electronic and optoelectronic properties. The synthesis, characterization and exfoliation process of millimeter-scale purple phosphorus single crystals have been reported, indicating that the upper limit of the hole mobility of purple phosphorus is between 3000 and 7000 cm 2 V -1 s -1 The decomposition temperature of purple phosphorus is 52°C higher than that of black phosphorus, making it the most stable phosphorus allotrope known so far. At the same time, as a two-dimensional material, purple phosphorus has high specific surface area, multiple chemically active sites, and adjustable electrical properties, making it more suitable as a temperature-sensitive material. Compared with other low-dimensional materials, its direct band gap of 2.54eV is larger than that of black phosphorus and semi-metallic graphene, which also gives it a wider application space. Purple phosphorus is similar to low-dimensional electronic materials such as graphene and black phosphorus, with excellent performance, high stability, and low preparation cost, and is very likely to bring breakthrough progress to the research in the field of electronic information sensing.

[0003] In order to promote the development of phosphene in the field of sensing, it is very important to develop a method to quickly and efficiently improve the adsorption performance of phosphene-based temperature-sensitive sensors based on the sensing properties of phosphene. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a purple phosphorene / graphene temperature-sensitive sensor and a preparation method thereof in view of the deficiencies in the above-mentioned prior art. The prepared purple phosphorene / graphene temperature-sensitive sensor can respond to temperature quickly and efficiently.

[0005] The present invention adopts the following technical solutions:

[0006] A method for preparing a purple phosphorene / graphene temperature-sensitive sensor comprises the following steps: preparing a graphene film by chemical vapor deposition, compounding the graphene film with purple phosphorene to form a heterojunction by vacuum filtration, preparing an electrode on the graphene film of the heterojunction, and obtaining the purple phosphorene / graphene temperature-sensitive sensor.

[0007] Specifically, the purple phosphorus block is prepared into purple phosphorene by using an ultrasonic method or a laser stripping method.

[0008] Furthermore, the purple phosphorus block is prepared by chemical vapor transfer method.

[0009] Specifically, the content of purple phosphorene in the heterojunction is 0.25 to 0.75 mg.

[0010] Specifically, the thickness of the graphene film in the heterojunction is 4 to 10 layers.

[0011] Furthermore, the area of ​​the graphene film is 1 to 1.5 cm 2 .

[0012] Specifically, the length of the electrode is equal to the side length of the graphene film.

[0013] Furthermore, the width of the electrode is 1 to 5 mm.

[0014] Specifically, the electrodes are silver glue and silver wire.

[0015] Another technical solution of the present invention is a purple phosphorene / graphene temperature sensitive sensor.

[0016] Compared with the prior art, the present invention has at least the following beneficial effects:

[0017] The invention discloses a method for preparing a purple phosphorus / graphene temperature-sensitive sensor. The method comprises preparing a purple phosphorus block sample by chemical vapor transfer (CVT), and then processing the purple phosphorus block sample into purple phosphorus by ultrasonic method. Graphene is prepared by chemical vapor deposition (CVD); different amounts of purple phosphorus and graphene film are prepared into heterojunction by vacuum filtration method; electrodes are connected on the purple phosphorus / graphene film to prepare a purple phosphorus-based temperature-sensitive sensor; graphene with stable number of layers, uniform thickness and excellent quality can be prepared by chemical vapor deposition method; purple phosphorus has adjustable bandgap width and many active sites, but poor electrical performance. By introducing graphene to provide carriers, the two are prepared into a heterojunction to test the temperature-sensitive sensing characteristics.

[0018] Furthermore, the number of layers of two-dimensional materials affects their sensing properties, so purple phosphorus needs to be peeled off. In this paper, the ultrasonic method can be used to batch prepare purple phosphorus blocks into purple phosphorene to give full play to the sensing advantages of two-dimensional materials.

[0019] Furthermore, high-purity purple phosphorus blocks can be prepared in batches using the chemical vapor transfer method.

[0020] Furthermore, by constructing heterojunctions with different phosphene contents to test the temperature-sensitive sensing properties, the relationship between phosphene content and temperature sensitivity was explored, and the optimal parameters were found to improve the sensing properties.

[0021] Furthermore, the optimal solution for preparing graphene is 10 sccm of methane, 50 sccm of hydrogen, a temperature of 1060°C, and a time of 10 min, which can produce graphene with uniform quality.

[0022] Further, a size of 1.5 cm is used 2 PES filter membrane, size 1cm 2 The graphene is filtered onto the filter membrane without agglomeration and leakage.

[0023] Furthermore, setting the length of the electrode equal to the side length of the graphene film can make the heterojunction look cleaner and smoother, ensuring that the single variable of the experiment is more conducive to progress.

[0024] The width of the electrode is further 1 to 5 mm, the purpose of which is to minimize the area of ​​graphene covered by the electrode while ensuring conductivity, so that the heterojunction contains more carriers, the heterojunction looks cleaner and smoother, and the single variable of the experiment is more conducive to progress.

[0025] Furthermore, the electrodes are silver glue and silver wire connected to a multimeter to observe the resistance change. Silver glue and silver wire are non-toxic, environmentally friendly and relatively low in price.

[0026] In summary, the present invention prepares a purple phosphorus bulk sample by chemical vapor transfer (CVT), and then processes the purple phosphorus bulk sample into purple phosphorene by ultrasonic method. Graphene is prepared by chemical vapor deposition (CVD). Different amounts of purple phosphorene and graphene film are prepared into heterojunction by vacuum filtration method. Conductive silver glue is coated on the purple phosphorene / graphene film and silver wire is connected, and the prepared purple phosphorene-based temperature-sensitive sensor has high temperature sensitivity.

[0027] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a schematic diagram of a phosphene-based temperature-sensitive sensor;

[0029] Figure 2 It is a schematic diagram of the heating curve;

[0030] Figure 3 This is the continuous test diagram of 80℃ temperature sensitive sensor;

[0031] Figure 4 This is the sensitivity diagram of the 80℃ temperature sensitive sensor. DETAILED DESCRIPTION

[0032] The technical solution of the present invention will be described clearly and completely below. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] In the present invention, unless otherwise specified, all the embodiments and preferred implementation methods mentioned herein can be combined with each other to form a new technical solution.

[0034] In the present invention, unless otherwise specified, all technical features and preferred features mentioned herein can be combined with each other to form a new technical solution.

[0035] In the present invention, unless otherwise specified, percentage (%) or part refers to the weight percentage or weight part relative to the composition.

[0036] In the present invention, unless otherwise specified, the components or preferred components involved can be combined with each other to form a new technical solution.

[0037] In the present invention, unless otherwise specified, the numerical range "a-b" represents an abbreviation of any real number combination between a and b, where a and b are real numbers. For example, the numerical range "6-22" means that all real numbers between "6-22" have been listed in this document, and "6-22" is just an abbreviation of these numerical combinations.

[0038] The “range” disclosed in the present invention is in the form of a lower limit and an upper limit, which can be one or more lower limits, and one or more upper limits, respectively.

[0039] In the present invention, the term "and / or" used herein refers to any combination and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0040] In the present invention, unless otherwise specified, each reaction or operation step can be carried out sequentially or in accordance with the sequence. Preferably, the reaction method herein is carried out sequentially.

[0041] Unless otherwise specified, the professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any method or material similar or equivalent to the described content may also be applied to the present invention.

[0042] The present invention provides a purple phosphorene / graphene temperature-sensitive sensor and a preparation method thereof, wherein a purple phosphorus block sample is prepared by chemical vapor transfer (CVT), and then the purple phosphorus block sample is processed into purple phosphorene by ultrasonic method or laser stripping method; graphene is prepared by chemical vapor deposition (CVD). Different amounts of purple phosphorene and graphene film are prepared into heterojunction by vacuum filtration method; conductive silver glue is coated on the purple phosphorene / graphene film and silver wire is connected to prepare a purple phosphorene-based temperature-sensitive sensor; a temperature curve of a heating platform is set to heat the heater to a certain temperature, and the temperature-sensitive detection platform records the change of resistance over time.

[0043] The invention discloses a method for preparing a purple phosphorene / graphene temperature-sensitive sensor. Graphene and purple phosphorene are compounded to prepare a purple phosphorene-based temperature-sensitive sensor. The purple phosphorus block is prepared by a chemical vapor transfer method (CVT), the purple phosphorene is prepared by an ultrasonic method or a laser stripping method, and the graphene is prepared by a chemical vapor deposition method (CVD).

[0044] In the heterojunction, the content of phosphene is 0.25-0.75 mg, the thickness of graphene film is 4-10 layers, and the size of phosphene is 1-1.5 cm 2 , and then anneal the heterojunction in a tube furnace at 200-250°C for 3-4h.

[0045] The electrodes of the purple phosphorene / graphene-based sensor are silver glue and silver wire, with a length equal to the side length of the graphene film and a width of 1 to 5 mm.

[0046] See also Figure 1 The heterojunction is filtered onto the PES membrane through a filtration device, with graphene at the bottom and phosphene at the top.

[0047] The temperature curve was set to raise the heater to 80-200°C, and the sensing performance of the purple phosphorene-based temperature sensitive sensor was measured using a temperature-sensitive detection platform. The temperature-sensitive detection platform was a self-made temperature platform. The temperature change curve could be set on the control panel, and the heating platform heated up according to the curve. The tested performance was the change of resistance over time. The tips power was 60%, the effective time was 5h, and the response to 200°C was the most sensitive, at 13.84%.

[0048] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. The components of the embodiments of the present invention described and shown in the drawings here can usually be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0049] Example 1

[0050] The power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. 0.25mg purple phosphorene and graphene were prepared into a heterojunction by filtration. The purple phosphorene-based temperature sensitive sensor was annealed and pretreated by heating at 200℃ for 3h in a tube furnace. The specific steps are as follows:

[0051] (1) Preliminary preparation

[0052] Blocky purple phosphorus was prepared by chemical vapor transfer (CVT), and the power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. Uniform graphene was prepared by chemical vapor deposition (CVD) under the conditions of 10sccm methane, 50sccm hydrogen, temperature 1060℃, and time 10min. 0.25mg purple phosphorene and graphene film were filtered for 30mins under -0.1mpa vacuum conditions to prepare a heterojunction. Silver glue was sealed on the film and connected to silver wire to prepare a temperature sensitive sensor. The temperature curve was set on the heating platform to heat the heater to 200℃.

[0053] (2) Adsorption stage

[0054] While waiting for the heater to heat to 200°C, the purple phosphorene-based sensor pretreated by the tubular furnace is placed on the heater and tested using a temperature testing platform. According to real-time resistance detection, the temperature-sensitive sensor is significantly sensitive to temperature, and the resistance value changes significantly. The resistance change rate, i.e., the temperature-sensitive performance, can reach a maximum of 13.69%. The temperature-sensitive sensor is more sensitive to temperature.

[0055] Example 2

[0056] The power of the ultrasonic cell disruptor was set to 60% and the effective time was 5h to prepare purple phosphorene. 0.25mg purple phosphorene and graphene were prepared into a heterojunction by filtration. The purple phosphorene-based temperature sensitive sensor was annealed and pretreated by heating at 200℃ for 3h in a tube furnace. The specific steps are as follows:

[0057] (1) Preliminary preparation

[0058] Blocky purple phosphorus was prepared by chemical vapor transfer (CVT), and the power of the ultrasonic cell disruptor was set to 60% and the effective time was 5h to prepare purple phosphorene. Uniform graphene was prepared by chemical vapor deposition (CVD) under the conditions of 10sccm methane, 50sccm hydrogen, temperature 1060℃, and time 10min. 0.25mg purple phosphorene and graphene film were filtered for 30mins under -0.1mpa vacuum conditions to prepare a heterojunction. Silver glue was sealed on the film and connected to silver wire to prepare a temperature sensitive sensor. The temperature curve was set on the heating platform to heat the heater to 150℃.

[0059] (2) Adsorption stage

[0060] While waiting for the heater to heat to 150°C, the purple phosphorene-based sensor pretreated by the tubular furnace was placed on the heater and tested using the temperature testing platform. The sensor resistance changed significantly, the resistance change rate was relatively stable, the response was very rapid, and the maximum temperature sensitivity could reach 5.42%, with the most obvious temperature sensing.

[0061] Example 3

[0062] The power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. 0.5mg purple phosphorene and graphene were prepared into a heterojunction by filtration. The purple phosphorene-based temperature sensitive sensor was annealed and pretreated by heating at 200℃ for 3h in a tube furnace. The specific steps are as follows:

[0063] (1) Preliminary preparation

[0064] Blocky purple phosphorus was prepared by chemical vapor transfer (CVT), and the power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. Uniform graphene was prepared by chemical vapor deposition (CVD) under the conditions of 10sccm methane, 50sccm hydrogen, temperature 1060℃, and time 10min. 0.5mg purple phosphorene and graphene film were filtered for 30mins under -0.1mpa vacuum conditions to prepare a heterojunction. Silver glue was sealed on the film and connected to silver wire to prepare a temperature sensitive sensor. The temperature curve was set on the heating platform to heat the heater to 200℃.

[0065] (2) Adsorption stage

[0066] While waiting for the heater to heat to 200°C, the purple phosphorene-based sensor pretreated by the tubular furnace was placed on the heater and tested using the temperature testing platform. According to the real-time resistance detection, the sensor resistance changed but the resistance value change was unstable, with the maximum resistance change rate being 4.11%.

[0067] Example 4

[0068] The power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. 0.75mg purple phosphorene and graphene were prepared into a heterojunction by filtration. The purple phosphorene-based temperature sensitive sensor was annealed and pretreated by heating at 200℃ for 3h in a tube furnace. The specific steps are as follows:

[0069] (1) Preliminary preparation

[0070] Blocky purple phosphorus was prepared by chemical vapor transfer (CVT), and the power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. Uniform graphene was prepared by chemical vapor deposition (CVD) under the conditions of 10sccm methane, 50sccm hydrogen, temperature 1060℃, and time 10min. 0.75mg purple phosphorene and graphene film were filtered for 30mins under -0.1mpa vacuum conditions to prepare a heterojunction. Silver glue was sealed on the film and connected to silver wire to prepare a temperature sensitive sensor. The temperature curve was set on the heating platform to heat the heater to 200℃.

[0071] (2) Adsorption stage

[0072] While waiting for the heater to heat to 200°C, the purple phosphorene-based sensor pretreated by the tubular furnace was placed on the heater and tested using the temperature testing platform. According to the real-time resistance detection, the sensor resistance changed significantly and responded quickly. The resistance change rate and temperature sensitivity reached 13.15%, and the temperature sensitivity was relatively large.

[0073] Example 5

[0074] The power of the ultrasonic cell disruptor was set to 60% and the effective time was 5h to prepare purple phosphorene. 0.75mg purple phosphorene and graphene were prepared into a heterojunction by filtration. The purple phosphorene-based temperature sensitive sensor was annealed and pretreated by heating at 200℃ for 3h in a tube furnace. The specific steps are as follows:

[0075] (1) Preliminary preparation

[0076] The blocky purple phosphorus was prepared by chemical vapor transfer (CVT), and the power of the ultrasonic cell disruptor was set to 60% and the effective time was 5h to prepare purple phosphorene. Uniform graphene was prepared by chemical vapor deposition (CVD) under the conditions of 10sccm methane, 50sccm hydrogen, temperature 1060℃, and time 10min. 0.75mg of purple phosphorene and graphene film were filtered for 30mins under -0.1mpa vacuum conditions to prepare a heterojunction. Silver glue was sealed on the film and connected to silver wire to prepare a temperature sensitive sensor. The temperature curve was set on the heating platform to heat the heater to 200℃.

[0077] (2) Adsorption stage

[0078] While waiting for the heater to heat to 200°C, the purple phosphorene-based sensor pretreated by the tubular furnace was placed on the heater and tested using the temperature testing platform. According to the real-time resistance detection, the sensor resistance changed significantly, and the resistance change rate, i.e., the temperature sensitivity, reached 13.84%, which has a large temperature sensitivity.

[0079] Example 6

[0080] The power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. 0.25mg purple phosphorene and graphene were prepared into a heterojunction by filtration. The purple phosphorene-based temperature sensitive sensor was annealed and pretreated by heating at 240℃ for 4h in a tube furnace. The specific steps are as follows:

[0081] (1) Preliminary preparation

[0082] Blocky purple phosphorus was prepared by chemical vapor transfer (CVT), and the power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. Uniform graphene was prepared by chemical vapor deposition (CVD) under the conditions of 10sccm methane, 50sccm hydrogen, temperature 1060℃, and time 10min. 0.25mg of purple phosphorene and graphene film were filtered for 30mins under -0.1mpa vacuum conditions to prepare a heterojunction. Silver glue was sealed on the film and connected to silver wire to prepare a temperature sensitive sensor. The temperature curve was set on the heating platform to heat the heater to 100℃.

[0083] (2) Adsorption stage

[0084] While waiting for the heater to heat to 100°C, the purple phosphorene-based sensor pretreated by the tubular furnace was placed on the heater and tested using the temperature testing platform. The sensor resistance changed significantly and the resistance value changed steadily. The resistance change curve grew steadily, and the resistance value change rate, i.e., the temperature sensitivity, was 8.92%.

[0085] Example 7

[0086] The power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. 0.5mg purple phosphorene and graphene were prepared into a heterojunction by filtration. The purple phosphorene-based temperature sensitive sensor was annealed and pretreated by heating at 250℃ in a tube furnace for 4h. The specific steps are as follows:

[0087] (1) Preliminary preparation

[0088] Blocky purple phosphorus was prepared by chemical vapor transfer (CVT), and the power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. Uniform graphene was prepared by chemical vapor deposition (CVD) under the conditions of 10sccm methane, 50sccm hydrogen, temperature 1060℃, and time 10min. 0.5mg purple phosphorene and graphene film were filtered for 30mins under -0.1mpa vacuum conditions to prepare a heterojunction. Silver glue was sealed on the film and connected to silver wire to prepare a temperature sensitive sensor. The temperature curve was set on the heating platform to heat the heater to 100℃.

[0089] (2) Adsorption stage

[0090] While waiting for the heater to heat to 100°C, the purple phosphorene-based sensor pretreated by the tubular furnace was placed on the heater and tested using the temperature test platform. The sensor resistance changed significantly in an instant, the resistance change was stable, and the temperature sensitivity was 3.63%.

[0091] Example 8

[0092] The power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. 0.5mg of purple phosphorene and graphene were prepared into a heterojunction by filtration. The purple phosphorene-based temperature sensitive sensor was annealed and pretreated by heating at 220℃ in a tube furnace for 4h. The specific steps are as follows:

[0093] (1) Preliminary preparation

[0094] Blocky purple phosphorus was prepared by chemical vapor transfer (CVT), and the power of the ultrasonic cell disruptor was set to 60% and the effective time was 10h to prepare purple phosphorene. Uniform graphene was prepared by chemical vapor deposition (CVD) under the conditions of 10sccm methane, 50sccm hydrogen, temperature 1060℃, and time 10min. 0.5mg purple phosphorene and graphene film were filtered for 30mins under -0.1mpa vacuum conditions to prepare a heterojunction. Silver glue was sealed on the film and connected to silver wire to prepare a temperature sensitive sensor. The temperature curve was set on the heating platform to heat the heater to 80℃.

[0095] (2) Adsorption stage

[0096] While waiting for the heater to heat to 80°C, the purple phosphorene-based sensor pretreated by the tubular furnace was placed on the heater and tested using the temperature testing platform. The sensor suddenly changed in an instant, and then the resistance value was relatively stable. The maximum temperature sensitivity of the sensor was 7.809%.

[0097] See also Figure 2 As shown in the figure, this is a laboratory-made temperature-sensitive test platform. Any temperature curve can be set through the control panel, and the heating plate will heat up according to the curve.

[0098] See also Figure 3 , as shown in the figure, is a schematic diagram of the temperature change over time when heated to 80℃.

[0099] See also Figure 4 As shown in the figure, it is a schematic diagram of the change of resistance over time of the heterojunction prepared by 0.5mg purple phosphorene and graphene when heated to 80℃, with a Tips power of 60%, an effective time of 10h, and a stable change.

[0100] In summary, the present invention provides a purple phosphorene / graphene temperature-sensitive sensor and a preparation method thereof. A purple phosphorus bulk sample is prepared by chemical vapor transfer (CVT), and then the purple phosphorus bulk sample is processed into purple phosphorene by ultrasonic method. Graphene is prepared by chemical vapor deposition (CVD). Different amounts of purple phosphorene and graphene film are prepared into heterojunctions by vacuum filtration method. Conductive silver glue is coated on the purple phosphorene / graphene film and silver wire is connected to prepare a purple phosphorene-based temperature-sensitive sensor. A temperature-sensitive test platform is assembled, a heating curve is set on the panel, and the heater is controlled to heat up; it is detected that the purple phosphorus-based temperature-sensitive sensor is very sensitive to temperature and has a large temperature sensitivity.

[0101] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for preparing a purple phosphorene / graphene temperature-sensitive sensor, characterized in that: The graphene film was prepared by chemical vapor deposition, and the graphene film was composited with purple phosphorene to form a heterojunction by vacuum filtration. The content of purple phosphorene in the heterojunction was 0.25-0.75 mg, the thickness of the graphene film in the heterojunction was 4-10 layers, and the area of ​​the graphene film was 1-1.5 cm2. Electrodes were prepared on the graphene film of the heterojunction to obtain a purple phosphorene / graphene temperature-sensitive sensor.

2. The method for preparing the purple phosphorene / graphene temperature sensitive sensor according to claim 1, characterized in that: Purple phosphorus blocks are prepared into purple phosphorene by ultrasonic or laser exfoliation.

3. The method for preparing the purple phosphorene / graphene temperature sensitive sensor according to claim 2, characterized in that: Purple phosphorus blocks were prepared by chemical vapor transfer method.

4. The method for preparing the purple phosphorene / graphene temperature sensitive sensor according to claim 1, characterized in that: The length of the electrode is equal to the side length of the graphene film.

5. The method for preparing the purple phosphorene / graphene temperature sensitive sensor according to claim 4, characterized in that: The width of the electrode is 1~5mm.

6. The method for preparing the purple phosphorene / graphene temperature sensitive sensor according to claim 1, 4 or 5, characterized in that: The electrodes are silver glue and silver wire.

7. A purple phosphorene / graphene temperature sensitive sensor, characterized in that: The purple phosphorene / graphene temperature sensitive sensor is prepared according to the preparation method of claim 1.

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