Device Calibration Method, Device Maintenance Method, and Semiconductor Processing Method

Abstract

A device calibration method, a device maintenance method, and a semiconductor processing method. The device calibration method includes: placing the body of a calibration part against the top surface of a shielding plate disposed on an electrostatic chuck. The calibration part further includes a first extension connected to the body and bent relative to the body, and a second extension connected to the first extension and bent relative to the first extension. The body and the second extension are on the same side of the first extension. The device calibration method further includes: adjusting the relative position of the shielding plate relative to the electrostatic chuck such that the second extension extending along a first axis toward the shielding plate does not contact a deposition ring surrounding the electrostatic chuck when the first extension abuts against a first side surface and a second side surface of the shielding plate respectively, wherein the first position, the second position, and the center of the shielding plate are arranged in the first axis.

Description

Technical Field

[0001] The present disclosure relates to a method for calibrating a device, a method for maintaining a device, and a semiconductor processing method. Background Art

[0002] In a semiconductor manufacturing process, a physical vapor deposition (PVD) process can be used to deposit a metal on the upper surface of a wafer, and the metal is also deposited on a deposition ring. Usually, a preventive maintenance (PM) check is performed before the above semiconductor manufacturing process to prevent wafer arcing from occurring during the above semiconductor manufacturing process. Summary of the Invention

[0003] In some embodiments of the present disclosure, a method for calibrating a device includes: abutting a body of a calibration part against a top surface of a shield plate on an electrostatic chuck. The calibration part further includes a first extension portion connected to the body and bent with respect to the body, and a second extension portion connected to the first extension portion and bent with respect to the first extension portion, and the body and the second extension portion are on the same side of the first extension portion. The method for calibrating a device further includes: adjusting a relative position of the shield plate with respect to the electrostatic chuck such that the second extension portion extending toward the shield plate along a first axis does not contact a deposition ring surrounding the electrostatic chuck when the second extension portion abuts against a first position and a second position on a side surface of the shield plate respectively, wherein the first position, the second position, and the center of the shield plate are arranged along the first axis.

[0004] In some embodiments of the present disclosure, a method for maintaining a device includes: abutting a body of a calibration part against a top surface of a shield plate on an electrostatic chuck, wherein the calibration part further includes a first extension portion connected to the body and bent with respect to the body and a second extension portion connected to the first extension portion and bent with respect to the first extension portion, and the body and the second extension portion are on the same side of the first extension portion; moving the first extension portion along a first axis toward a first position on a side surface of the shield plate until the second extension portion extending toward the shield plate along the first axis contacts the deposition ring surrounding the electrostatic chuck, wherein the first axis passes through the center of the shield plate; moving the calibration part from one side of the first position of the shield plate to one side of the second position, wherein the first position and the second position are arranged along the first axis; moving the first extension portion along the first axis toward the second position until the second extension portion extending toward the shield plate along the first axis contacts the deposition ring; and replacing the shield plate when the second extension portion contacts the deposition ring and the first extension portion does not abut against the second position.

[0005] In some embodiments of the present disclosure, a semiconductor processing method includes: calibrating a relative position of a mask with respect to an underlying electrostatic chuck, including: abutting a body of a calibration part against a top surface of the mask, wherein the calibration part further includes a first extension connecting the body and bent with respect to the body, and a second extension connecting the first extension and bent with respect to the first extension, and the body and the second extension are on the same side of the first extension; pushing the mask with the first extension along a first axis toward a first position on a side surface of the mask until the second extension extending along the first axis toward the mask contacts a deposition ring surrounding the electrostatic chuck, the first axis passing through a center of the mask; moving the calibration part from one side of the first position of the mask to one side of a second position, wherein the first position and the second position are arranged along the first axis; and pushing the mask with the first extension along the first axis toward the second position and stopping before the second extension extending along the first axis toward the mask contacts the deposition ring. The semiconductor processing method further includes: depositing an oxidation material coated outside a target on the mask; replacing the mask deposited with the oxidation material with a semiconductor substrate; and depositing the target on the semiconductor substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The present disclosure may be best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be emphasized that, according to standard practice in the art, the various features are not drawn to scale. For purposes of illustration only. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of presentation.

[0007] Figure 1 is a side view of a calibration part illustrated according to some embodiments of the present disclosure;

[0008] Figure 2A is a cross-sectional schematic view of a calibration stage of a semiconductor manufacturing apparatus illustrated according to some embodiments of the present disclosure;

[0009] Figure 2B is a cross-sectional schematic view of a calibration stage of a semiconductor manufacturing apparatus illustrated according to some embodiments of the present disclosure;

[0010] Figure 2C is a cross-sectional schematic view of a stage of a semiconductor manufacturing apparatus according to some embodiments of the present disclosure;

[0011] Figure 2D is a cross-sectional schematic view of a stage of a semiconductor manufacturing apparatus according to some embodiments of the present disclosure;

[0012] Figure 2E is illustrated according to some embodiments of the present disclosure for a semiconductor manufacturing apparatus at Figure 2A a top view of a calibration stage;

[0013] Figure 2F is a top view of a semiconductor manufacturing apparatus during a Figure 2B calibration stage according to some embodiments of the present disclosure;

[0014] Figure 2G is a top view of a semiconductor manufacturing apparatus during a Figure 2C calibration stage according to some embodiments of the present disclosure;

[0015] Figure 2H is a top view of a semiconductor manufacturing apparatus during a Figure 2D calibration stage according to some embodiments of the present disclosure;

[0016] Figure 2I is a cross-sectional schematic view showing a situation where a shielding plate needs to be replaced according to some embodiments of the present disclosure;

[0017] Figure 2J is a cross-sectional schematic view showing another situation where a shielding plate needs to be replaced according to some embodiments of the present disclosure;

[0018] Figure 3 is a flowchart showing a method for calibrating an apparatus according to some embodiments of the present disclosure;

[0019] Figure 4 is a flowchart showing a method for maintaining an apparatus according to some embodiments of the present disclosure;

[0020] Figure 5A is a cross-sectional schematic view showing a processing stage of a semiconductor manufacturing apparatus according to some embodiments of the present disclosure;

[0021] Figure 5B is a cross-sectional schematic view showing a processing stage of a semiconductor manufacturing apparatus according to some embodiments of the present disclosure;

[0022] Figure 5C is a cross-sectional schematic view showing a processing stage of a semiconductor manufacturing apparatus according to some embodiments of the present disclosure;

[0023] Figure 5D is a cross-sectional schematic view showing a processing stage of a semiconductor manufacturing apparatus according to some embodiments of the present disclosure;

[0024] Figure 6 is a flowchart showing a semiconductor processing method according to an embodiment of the present disclosure.

[0025]

Reference Signs

[0026] 100: Calibration part

[0027] 110: Body

[0028] 110a: Bottom surface

[0029] 120: First extension part

[0030] 120a: Contact surface

[0031] 130: Second extension part

[0032] 200: Semiconductor manufacturing equipment

[0033] 210: Electrostatic chuck

[0034] 220: Shielding plate

[0035] 220a: Top surface

[0036] 230: Deposition ring

[0037] 230a: Side surface

[0038] 240: Target

[0039] 240A: Oxidation material

[0040] 300: Equipment calibration method

[0041] 310,320,330,340,350,360,370,380,410,420,430,440,440A,450,460,470,480,480A,610,620,630,640: Operations

[0042] 400: Equipment maintenance method

[0043] 600: Semiconductor processing method

[0044] A: First position

[0045] B: Second position

[0046] C: Third position

[0047] D: Fourth position

[0048] D1: First axial direction

[0049] D2: Second axial direction

[0050] P: Plasma

[0051] W: Semiconductor substrate Detailed implementation manners

[0052] It should be understood that the following disclosure provides many different embodiments or examples for implementing different features of the present disclosure. Specific embodiments or examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, the dimensions of the elements are not limited to the ranges or values disclosed, but may depend on process conditions and / or the desired characteristics of the device. For simplicity and clarity, various features may be arbitrarily drawn at different scales. In the drawings, some layers / features may be omitted for simplicity. In addition, the present disclosure may repeat reference numerals and / or letters in various instances. This repetition is for simplicity and clarity purposes and does not in itself determine the relationship between the various embodiments and / or configurations discussed.

[0053] In addition, for ease of description, spatially relative terms such as "below", "beneath", "lower", "above", "upper", and the like may be used herein to describe one element or feature in relation to another or other elements or features as shown in the figures. In addition to the orientation depicted in the figures, the spatially relative terms are also intended to encompass different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or other orientations), and the spatially relative descriptive terms used herein may be interpreted accordingly. In addition, during subsequent manufacturing processes, there may be one or more additional operations between the described operations, and the order of operations may be changed. In the following embodiments, the materials, configurations, dimensions, processes, and / or operations (e.g., one or more of the figures) described with respect to one embodiment may be employed in other embodiments, and their detailed descriptions may be omitted.

[0054] As used herein, "about", "approximately", or "substantially" generally should mean within 20%, within 10%, or within 5% of a given value or range. The numerical amounts given herein are approximate, i.e., the terms "about", "approximately", or "substantially" may be inferred in the absence of an explicit statement.

[0055] The present disclosure relates to a method for calibrating a device, a method for maintaining a device, and a semiconductor processing method. Specifically, the present disclosure relates to solving the problem of wafer damage caused by uneven deposition when performing a deposition process on a semiconductor element. Some of the embodiments disclosed herein may be used in physical vapor deposition or any related process.

[0056] Figure 1A cross-sectional view of the calibration part 100 in some embodiments is shown. The calibration part 100 includes a body 110, a first extension 120, and a second extension 130. The first extension 120 is connected to the body 110 and is bent relative to the body 110. The second extension 130 is connected to the first extension 120 and is bent relative to the first extension 120. The body 110 and the second extension 130 are on the same side of the first extension 120.

[0057] In some embodiments, the calibration part 100 can be a part for calibrating equipment related to physical vapor deposition.

[0058] In some embodiments, the length of the body 110 and the length of the second extension 130 can be the same or different.

[0059] Figures 2A to 2D Cross-sectional views of different calibration stages of the equipment calibration method 300 according to some embodiments of the present disclosure are shown respectively. In some embodiments, the calibration part 100 is applied to the semiconductor manufacturing equipment 200. The semiconductor manufacturing equipment 200 includes an electrostatic chuck 210, a shielding plate 220 disposed on the electrostatic chuck 210, and a deposition ring 230 surrounding the electrostatic chuck 210. The body 110 is configured to abut against the top surface 220a of the shielding plate 220. The first extension 120 is connected to the body 110 and is bent relative to the body 110. The first extension 120 is configured to abut against the side surface of the shielding plate 220. The second extension 130 is connected to the first extension 120 and is bent relative to the first extension 120. The second extension 130 is configured to abut against the side surface 230a of the deposition ring 230, wherein the body 110 and the second extension 130 are on the same side of the first extension 120.

[0060] In some embodiments, the body 110 has a bottom surface 110a configured to abut against the top surface 220a of the shielding plate 220. The first extension 120 has an abutting surface 120a configured to abut against the side surface of the shielding plate 220, and the bottom surface 110a of the body 110 and the abutting surface 120a of the first extension 120 are perpendicular to each other. Thereby, when the calibration part 100 abuts against the top surface 220a and the side surface of the shielding plate 220 through the body 110 and the first extension 120 respectively, a stable abutting effect can be achieved.

[0061] Figures 2E to 2H Shown according to some embodiments of the present disclosure corresponding to Figures 2A to 2D A top view of the calibration stage of the equipment calibration method 300. The side surface of the shielding plate 220 includes a first position A, a second position B, a third position C, and a fourth position D.

[0062] As Figure 2A , Figure 2B , Figure 2E AndFigure 2F As shown, in some embodiments, the calibration part 100 is configured to abut the body 110 against the top surface 220a of the shield 220 to adjust the relative position of the shield 220 with respect to the electrostatic chuck 210, such that the second extension 130 does not contact the deposition ring 230 when the first extension 120 abuts the side surface of the shield 220 at the first position A and the second position B respectively, wherein the first position A and the second position B are arranged along a first axial direction D1 passing through the center of the shield 220.

[0063] In some embodiments, for example, the first axial direction D1 may be the X axial direction.

[0064] Figure 3 FIG. is a flowchart of an equipment calibration method 300 for calibrating the relative position of the shield 220 with respect to the electrostatic chuck 210 by using the calibration part 100 according to some embodiments of the present disclosure. Figure 3 The method illustrated in can be applied to the semiconductor manufacturing equipment 200. Please also refer to Figure 2A 、 Figure 2B 、 Figure 2E 、 Figure 2F and Figure 3 , the method of the present embodiment can be applied to Figure 2A and Figure 2B manufacturing equipment. The detailed steps of the equipment calibration method 300 of the embodiments of the present disclosure will be described below in conjunction with the operating relationship between the components in the semiconductor manufacturing equipment 200.

[0065] As Figure 3 shown, the present embodiment discloses an equipment calibration method 300 for calibrating the relative position of the shield 220 with respect to the electrostatic chuck 210 by using the calibration part 100. Specifically, the relative position of the shield 220 with respect to the electrostatic chuck 210 is calibrated to center the shield 220 with respect to the electrostatic chuck 210. The equipment calibration method 300 includes operations 310 to 340.

[0066] In operation 310, referring to Figure 3 , the body 110 is abutted against the top surface 220a of the shield 220. Specifically, the operator abuts the body 110 of the calibration part 100 against the top surface 220a of the shield 220.

[0067] In operation 320, referring to Figure 2A 、 Figure 2E and Figure 3, the first extension portion 120 is used to push the shielding plate 220 along the first axial direction D1 towards the first position A until the second extension portion 130 contacts the deposition ring 230. Specifically, the operator can hold the calibration part 100 by hand, and make the bottom surface 110a of the body 110 abut against the top surface 220a of the shielding plate 220. Then, the operator holds the calibration part 100 and makes the abutting surface 120a of the first extension portion 120 abut against the side surface of the shielding plate 220, and applies a force to push the shielding plate 220 along the first axial direction D1 towards the first position A. During the process of applying the force, the abutting surface 120a of the first extension portion 120 faces the center of the shielding plate 220. When the operator holds the calibration part 100 and pushes the shielding plate 220 with the first extension portion 120 until the second extension portion 130 contacts the side surface 230a of the deposition ring 230, stop pushing the shielding plate 220 with the first extension portion 120.

[0068] In operation 330, the calibration part 100 is moved from one side of the first position A of the shielding plate 220 to one side of the second position B. Specifically, when the operator holds the calibration part 100 and pushes the shielding plate 220 with the first extension portion 120 until the second extension portion 130 contacts the deposition ring 230, stop pushing the shielding plate 220 with the first extension portion 120 (i.e., operation 320 is completed). Then, the operator moves the calibration part 100 from one side of the first position A of the shielding plate 220 to one side of the second position B.

[0069] In operation 340, refer to Figure 2B , Figure 2F and Figure 3 , use the first extension portion 120 to push the shielding plate 220 along the first axial direction D1 towards the second position B and stop before the second extension portion 130 contacts the deposition ring 230. Specifically, the operator can hold the calibration part 100 by hand, and make the bottom surface 110a of the body 110 abut against the top surface 220a of the shielding plate 220. Then, the operator holds the calibration part 100 and makes the abutting surface 120a of the first extension portion 120 abut against the side surface of the shielding plate 220, and applies a force to push the shielding plate 220 along the first axial direction D1 towards the second position B. During the process of applying the force, the abutting surface 120a of the first extension portion 120 faces the center of the shielding plate 220. When the operator holds the calibration part 100 and pushes the shielding plate 220 with the first extension portion 120, at the same time, do not make the second extension portion 130 contact the side surface 230a of the deposition ring 230. After performing operations 310 to 340, it can be ensured that the second extension portion 130 does not contact the deposition ring 230 when the first extension portion 120 abuts against the side surfaces of the shielding plate 220 at the first position A and the second position B respectively. This also means that the relative position of the shielding plate 220 relative to the electrostatic chuck 210 in the first axial direction D1 has been calibrated.

[0070] In some embodiments, such as Figure 2AAs shown, in operation 320, when the operator holds the calibration part 100 and pushes the shield 220 with the first extension 120 towards the first position A until the second extension 130 contacts the side 230a of the deposition ring 230, the shield 220 is pushed a first distance. As Figure 2B shown, in operation 340, when the operator holds the calibration part 100 and pushes the shield 220 with the first extension 120 towards the second position B without the second extension 130 contacting the side 230a of the deposition ring 230, the shield 220 is pushed a second distance. The second distance is less than the first distance. By doing so, the operator centers the shield 220 relative to the electrostatic chuck 210 in the first axial direction D1.

[0071] In some embodiments, the first position A and the second position B are regions located on opposite sides of the shield 220 in the first axial direction D1.

[0072] In some embodiments, the distance by which the side of the shield 220 protrudes from the side 230a of the deposition ring 230 in the first axial direction D1 after being calibrated by the equipment calibration method 300 is in the range of about 0.8 mm to about 1.0 mm.

[0073] As Figure 2C 、 Figure 2D 、 Figure 2G and Figure 2H shown, in some embodiments, the calibration part 100 is further configured to abut the body 110 against the top surface 220a of the shield 220 to adjust the relative position of the shield 220 relative to the electrostatic chuck 210, such that the second extension 130 does not contact the deposition ring 230 when the first extension 120 abuts the side of the shield 220 at the third position C and the fourth position D respectively, where the third position C and the fourth position D are arranged along the second axial direction D2 passing through the center of the shield 220.

[0074] In some embodiments, the second axial direction D2 is perpendicular to the first axial direction D1. For example, the second axial direction D2 can be the Y axial direction.

[0075] In some embodiments, operations 350 to 380 of the equipment calibration method 300 as shown in Figure 3 can be continued to calibrate the relative position of the shield 220 relative to the electrostatic chuck 210 in the second axial direction D2.

[0076] In operation 350, referring to Figure 3, move the calibration part 100 from one side of the second position B of the shielding plate 220 to one side of the third position C. Specifically, the operator moves the calibration part 100 away from one side of the second position B of the shielding plate 220, and then abuts the body 110 of the calibration part 100 against the top surface 220a of the third position C of the shielding plate 220.

[0077] In operation 360, refer to Figure 2C , Figure 2G and Figure 3 , push the shielding plate 220 along the second axis D2 toward the third position C with the first extension 120 until the second extension 130 contacts the deposition ring 230. Specifically, the operator can hold the calibration part 100 with the bottom surface 110a of the body 110 abutting against the top surface 220a of the shielding plate 220. Then, the operator holds the calibration part 100 with the abutting surface 120a of the first extension 120 abutting against the side surface of the shielding plate 220, and applies a force to push the shielding plate 220 along the second axis D2 toward the third position C. During the application of the force, the abutting surface 120a of the first extension 120 faces the center of the shielding plate 220. When the operator holds the calibration part 100 and pushes the shielding plate 220 with the first extension 120 until the second extension 130 contacts the side surface 230a of the deposition ring 230, stop pushing the shielding plate 220 with the first extension 120.

[0078] In operation 370, move the calibration part 100 from one side of the third position C of the shielding plate 220 to one side of the fourth position D. Specifically, when the operator holds the calibration part 100 and pushes the shielding plate 220 with the first extension 120 until the second extension 130 contacts the deposition ring 230, stop pushing the shielding plate 220 with the first extension 120 (i.e., operation 360 is completed). Then, the operator moves the calibration part 100 from one side of the third position C of the shielding plate 220 to one side of the fourth position D.

[0079] In operation 380, refer to Figure 2D , Figure 2H and Figure 3, the first extension portion 120 pushes the shielding plate 220 along the second axial direction D2 towards the fourth position D and stops before the second extension portion 130 contacts the deposition ring 230. Specifically, the operator can hold the calibration part 100 by hand, making the bottom surface 110a of the body 110 abut against the top surface 220a of the shielding plate 220. Then, the operator holds the calibration part 100 by hand, makes the abutting surface 120a of the first extension portion 120 abut against the side surface of the shielding plate 220, and applies a force to push the shielding plate 220 along the second axial direction D2 towards the fourth position D. During the process of applying the force, the abutting surface 120a of the first extension portion 120 faces the center of the shielding plate 220. When the operator holds the calibration part 100 and pushes the shielding plate 220 with the first extension portion 120, the second extension portion 130 is not allowed to contact the side surface 230a of the deposition ring 230 at the same time.

[0080] In some embodiments, as Figure 2C shown, in operation 360, when the operator holds the calibration part 100 and pushes the shielding plate 220 towards the third position C with the first extension portion 120 until the second extension portion 130 contacts the side surface 230a of the deposition ring 230, the shielding plate 220 is pushed a third distance. As Figure 2B shown, in operation 380, when the operator holds the calibration part 100 and pushes the shielding plate 220 towards the fourth position D with the first extension portion 120 without making the second extension portion 130 contact the side surface 230a of the deposition ring 230, the shielding plate 220 is pushed a fourth distance again. The above-mentioned fourth distance is less than the above-mentioned third distance. The operator thereby centers the shielding plate 220 relative to the electrostatic chuck 210 in the second axial direction D2.

[0081] In some embodiments, the third position C and the fourth position D are regions located on opposite sides of the second axial direction D2 of the shielding plate 220 respectively.

[0082] In some embodiments, the distance by which the side surface of the shielding plate 220 protrudes from the side surface 230a of the deposition ring 230 in the second axial direction D2 after being calibrated by the equipment calibration method 300 is in the range of about 0.8 mm to about 1.0 mm.

[0083] In some embodiments, the operator can calibrate the relative position of the shielding plate 220 relative to the electrostatic chuck 210 by the equipment calibration method 300 in the first axial direction D1, the second axial direction D2, or more axial directions. For example, the operator can calibrate the relative position of the shielding plate 220 relative to the electrostatic chuck 210 at a fifth position and a sixth position in a third axial direction that is about 45 degrees different from the first axial direction D1, where the fifth position and the sixth position are located at diagonal positions of the shielding plate 220 (not shown in the figure).

[0084] In some embodiments, for example, the operator can calibrate the relative position of the shield 220 with respect to the electrostatic chuck 210 at the seventh position and the eighth position on the fourth axis perpendicular to the third axis by the device calibration method 300, where the seventh position and the eighth position are located at the diagonal positions of the shield 220 (not shown in the figure).

[0085] It should be noted that the operator can repeatedly execute the above device calibration method 300 on multiple axes of the shield 220 according to different requirements to center the shield 220 with respect to the electrostatic chuck 210.

[0086] Figure 2I A cross-sectional schematic diagram showing the situation of the shield to be replaced according to some embodiments of the present disclosure.

[0087] Figure 4 A flowchart showing the device maintenance method according to some embodiments of the present disclosure.

[0088] In some embodiments, it is also possible to use, as Figure 4 shown, the device maintenance method 400 to determine whether the shield 220 must be replaced on the first axis D1. After performing operations 410 to 440, operation 440A is then performed.

[0089] The following will refer to Figure 2I and Figure 4 to detail the specific embodiments of using the device maintenance method 400 to determine whether the shield 220 must be replaced.

[0090] Perform operation 410, referring to Figure 2I and Figure 4 , to abut the body 110 against the top surface 220a of the shield 220. Specifically, the operator can hold the calibration part 100 and make the bottom surface 110a of the body 110 abut against the top surface 220a of the shield 220.

[0091] Perform operation 420, referring to Figure 2I and Figure 4, the first extension portion 120 moves along the first axial direction D1 towards the first position A on the side surface of the shielding plate 220 until the second extension portion 130 extending along the first axial direction D1 towards the shielding plate 220 contacts the deposition ring 230 surrounding the electrostatic chuck 210. Specifically, the operator holds the calibration part 100 and makes the abutting surface 120a of the first extension portion 120 abut against the side surface of the shielding plate 220, and applies a force to push the shielding plate 220 along the first axial direction D1 towards the first position A. During the application of the force, the abutting surface 120a of the first extension portion 120 faces the center of the shielding plate 220. When the operator holds the calibration part 100 and moves the first extension portion 120 along the first axial direction D1 towards the first position A until the second extension portion 130 contacts the deposition ring 230, the pushing of the shielding plate 220 by the first extension portion 120 is stopped.

[0092] Perform operation 430, refer to Figure 2I and Figure 4 , move the calibration part 100 from one side of the first position A of the shielding plate 220 to one side of the second position B. Specifically, the operator moves the calibration part 100 from one side of the first position A of the shielding plate 220 to one side of the second position B. In some embodiments, the first position A and the second position B are located at diagonal positions of the shielding plate 220. Then, the operator can hold the calibration part 100 and make the bottom surface 110a of the body 110 abut against the top surface 220a of the shielding plate 220.

[0093] Perform operation 440, refer to Figure 2I and Figure 4 , the first extension portion 120 moves along the first axial direction D1 towards the second position B on the side surface of the shielding plate 220 until the second extension portion 130 extending along the first axial direction D1 towards the shielding plate 220 contacts the deposition ring 230 surrounding the electrostatic chuck 210. Specifically, the operator holds the calibration part 100 and makes the abutting surface 120a of the first extension portion 120 abut against the side surface of the shielding plate 220, and applies a force to push the shielding plate 220 along the first axial direction D1 towards the second position B. During the application of the force, the abutting surface 120a of the first extension portion 120 faces the center of the shielding plate 220. When the operator holds the calibration part 100 and moves the first extension portion 120 along the first axial direction D1 towards the second position B until the second extension portion 130 contacts the deposition ring 230, the pushing of the shielding plate 220 by the first extension portion 120 is stopped.

[0094] Perform operation 440A to replace the shielding plate 220 when the second extension 130 moves along the first axial direction D1 to contact the deposition ring 230 but the first extension 120 does not abut against the second position B. Specifically, when the operator holds the calibration part 100 and wants to push the shielding plate 220 along the first axial direction D1 towards the second position B with the first extension 120, during this process, when the second extension 130 first moves along the first axial direction D1 to contact the deposition ring 230 but the first extension 120 does not abut against the second position B, the operator determines that the shielding plate 220 must be replaced accordingly.

[0095] In some embodiments, the shielding plate 220 becomes smaller in size due to repeated use in the process, resulting in that when the operator holds the calibration part 100 and wants to push the shielding plate 220 along the first axial direction D1 towards the second position B with the first extension 120, the second extension 130 moves along the first axial direction D1 to contact the deposition ring 230 but the first extension 120 does not abut against the second position B. Thus, the operator can use the calibration part 100 to evaluate whether the shielding plate 220 needs to be replaced through operation 440A.

[0096] Figure 2J A cross-sectional schematic diagram showing another situation where the shielding plate needs to be replaced according to some embodiments of the present disclosure is illustrated. In this embodiment, the shielding plate 220 is centered relative to the electrostatic chuck 210, such that both sides of the shielding plate 220 contact the abutting surface 120a of the first extension 120.

[0097] The following will refer to Figure 2J Specifically describe some other embodiments for determining whether the shielding plate 220 must be replaced by using the equipment maintenance method 400. In some embodiments, Figure 2I and Figure 2J differ in whether the first extension 120 pushes the shielding plate 220 in operation 420, but the operation steps are all to perform operation 410 to operation 440A. That is, in Figure 2I the some embodiments illustrated, the first extension 120 pushes the shielding plate 220 during the execution of operation 420. On the contrary, in Figure 2J the some embodiments illustrated, the first extension 120 does not push the shielding plate 220 during the execution of operation 420.

[0098] In some embodiments, when the side surface of the shielding plate 220 protrudes less than about 0.8 mm from the side surface 230a of the deposition ring 230 in the first axial direction D1, the operator replaces the shielding plate 220.

[0099] In some embodiments of the present disclosure, it is also possible to use, such as Figure 4The device maintenance method 400 shown determines whether the shielding plate 220 needs to be replaced in the second axial direction D2. In addition to determining whether the shielding plate 220 needs to be replaced in the first axial direction D1 as shown Figure 2I the operator can also determine whether the shielding plate 220 needs to be replaced in the second axial direction D2. After performing operations 410 to 480, operation 480A is then executed.

[0100] The following refers to Figure 2I and Figure 4 to detail the specific implementation of determining whether the shielding plate 220 needs to be replaced using the device maintenance method 400.

[0101] After performing operations 410 to 440 of the device maintenance method 400, if the first extension 120 abuts against the second position B, it means that the shielding plate 200 meets the standard in the first axial direction D1 and does not need to be replaced. According to the device maintenance method 400, it is then possible to determine whether the shielding plate 220 needs to be replaced in the second axial direction D2. After performing operations 450 to 480, operation 480A is then executed.

[0102] Perform operation 450 to move the calibration part 100 from one side of the second position B of the shielding plate 200 to one side of the third position C. In other words, the operator moves the calibration part 100 away from one side of the second position B of the shielding plate 220 and then abuts the body 110 of the calibration part 100 against the top surface 220a of the third position C of the shielding plate 220.

[0103] Perform operation 460, referring to Figure 4 and in conjunction with referring to Figure 2G and Figure 2H move the first extension 120 along the second axial direction D2 towards the third position C on the side surface of the shielding plate 220 until the second extension 130 extending along the second axial direction D2 towards the shielding plate 220 contacts the deposition ring 230 surrounding the electrostatic chuck 210. Specifically, the operator holds the calibration part 100 so that the abutting surface 120a of the first extension 120 abuts against the side surface of the shielding plate 220 and applies a force to push the shielding plate 220 along the second axial direction D2 towards the third position C. During the application of the force, the abutting surface 120a of the first extension 120 faces the center of the shielding plate 220. When the operator holds the calibration part 100 and moves the first extension 120 along the second axial direction D2 towards the third position C until the second extension 130 contacts the deposition ring 230, stop pushing the shielding plate 220 with the first extension 120.

[0104] Perform operation 470. Referring to Figure 4 and in conjunction with referring to Figure 2G and Figure 2H, move the calibration part 100 from one side of the third position C of the shielding plate 220 to one side of the fourth position D. Specifically, the operator moves the calibration part 100 from one side of the third position C of the shielding plate 220 to one side of the fourth position D. In some embodiments, the third position C and the fourth position D are located at diagonal positions of the shielding plate 220. Then, the operator can hold the calibration part 100 with the bottom surface 110a of the body 110 abutted against the top surface 220a of the shielding plate 220.

[0105] Perform operation 480, refer to Figure 4 , and cooperate with the reference Figure 2G and Figure 2H , move the first extension 120 along the second axis D2 towards the fourth position D on the side surface of the shielding plate 220 until the second extension 130 extending along the second axis D2 towards the shielding plate 220 contacts the deposition ring 230 surrounding the electrostatic chuck 210. Specifically, the operator holds the calibration part 100 with the abutting surface 120a of the first extension 120 abutted against the side surface of the shielding plate 220, and applies a force to push the shielding plate 220 along the second axis D2 towards the fourth position D. During the application of the force, the abutting surface 120a of the first extension 120 faces the center of the shielding plate 220. When the operator holds the calibration part 100 and moves the first extension 120 along the second axis D2 towards the fourth position D until the second extension 130 contacts the deposition ring 230, stop pushing the shielding plate 220 with the first extension 120.

[0106] Perform operation 480A. When the second extension 130 moves along the second axis D2 and contacts the deposition ring 230 but the first extension 120 does not abut against the fourth position D, replace the shielding plate 220. Specifically, when the operator holds the calibration part 100 and wants to push the shielding plate 220 along the second axis D2 towards the fourth position D with the first extension 120, during this process, when the second extension 130 first moves along the second axis D2 and contacts the deposition ring 230 but the first extension 120 does not abut against the fourth position D, the operator determines therefrom that the shielding plate 220 must be replaced.

[0107] In some embodiments, the shielding plate 220 becomes smaller in size due to repeated use in the process, resulting in that when the operator holds the calibration part 100 and wants to push the shielding plate 220 along the second axis D2 towards the fourth position D, during this process, when the second extension 130 moves along the second axis D2 and contacts the deposition ring 230 but the first extension 120 does not abut against the fourth position D, the operator replaces the shielding plate 220.

[0108] In some embodiments, the first extension portion 120 pushes the shielding plate 220 during the execution of operation 420. In some other embodiments, the first extension portion 120 does not push the shielding plate 220 during the execution of operation 420.

[0109] In some embodiments, the operator can determine whether the shielding plate 220 needs to be replaced in the first axial direction D1, the second axial direction D2, or more axial directions by the equipment maintenance method 400. For example, the operator can determine whether the shielding plate 220 needs to be replaced at the fifth position and the sixth position in the third axial direction that is about 45 degrees different from the first axial direction D1 by the equipment maintenance method 400, where the fifth position and the sixth position are located at the diagonal positions of the shielding plate 220 (not shown in the figure).

[0110] In some embodiments, for example, the operator can determine whether the shielding plate 220 needs to be replaced at the seventh position and the eighth position in the fourth axial direction that is perpendicular to the third axial direction by the equipment maintenance method 400, where the seventh position and the eighth position are located at the diagonal positions of the shielding plate 220 (not shown in the figure).

[0111] It should be noted that the operator can repeatedly execute the above equipment maintenance method 400 in multiple axial directions of the shielding plate 220 according to different requirements to determine whether the shielding plate 220 needs to be replaced.

[0112] It should be noted that the above-mentioned first position A, second position B, third position C, fourth position D, or other multiple pairs of different positions in multiple axial directions can be interchanged. For example, the above-mentioned first position can refer to the second position, and the above-mentioned second position can refer to the first position. More specifically, the first position is not limited to being Figure 2A , Figure 2B and Figures 2E to 2H to the right of, and can also be to the left of, the second position is not limited to being Figure 2A , Figure 2B and Figures 2E to 2H to the left of, and can also be to the right of.

[0113] Figure 5A , Figure 5B , Figure 5C and Figure 5D Illustrate the various stages of the semiconductor processing method 600 according to some embodiments of the present disclosure. In some embodiments, the semiconductor manufacturing equipment 200 further includes a target 240 and an oxidation material 240A coated outside the target 240. The target 240 and the oxidation material 240A are located above the electrostatic chuck 210, the shielding plate 220, and the deposition ring 230. In some embodiments, the oxidation material 240A is formed due to the oxidation of the periphery of the target 240 in contact with air.

[0114] In some embodiments, a plasma P is generated in the chamber space below the target 240 and the oxidation material 240A. Ions of the plasma P are used to strike the target 240 and the oxidation material 240A to sputter metal onto the shield 220 and the deposition ring 230.

[0115] Figure 6 A flowchart showing the various stages of a semiconductor processing method 600 according to an embodiment of the present disclosure is depicted. Figure 6 The method shown in can be applied to the semiconductor manufacturing apparatus 200. Please also refer to Figure 5A 、 Figure 5B 、 Figure 5C 、 Figure 5D and Figure 6 , the method of the present embodiment can be applied to Figure 5A 、 Figure 5B 、 Figure 5C and Figure 5D manufacturing apparatuses. The detailed steps of the semiconductor processing method 600 of the present disclosure embodiment will be described below in conjunction with the operating relationship between the various components in the manufacturing apparatus.

[0116] As Figure 6 shown, the present embodiment discloses a semiconductor processing method 600. The semiconductor processing method 600 includes an operation 610, an operation 620, an operation 630, and an operation 640.

[0117] In operation 610, referring to Figure 5A and Figure 6 , the relative position of the shield 220 with respect to the electrostatic chuck 210 is calibrated. Specifically, the operator calibrates the relative position of the shield 220 with respect to the electrostatic chuck 210 by the equipment calibration method 300 so that the shield 220 is centered with respect to the electrostatic chuck 210.

[0118] The equipment calibration method 300 and its operations 310 to 380 have been described in detail above, so they will not be elaborated here.

[0119] In operation 620, referring to Figure 5B and Figure 6, deposit the oxidation material 240A coated outside the target 240 on the shielding plate 220. Specifically, after the operator holds the calibration part 100 and centers the shielding plate 220 relative to the electrostatic chuck 210 by the equipment calibration method 300, remove the calibration part 100. Then, evacuate the chamber space to a vacuum state. Perform baking to remove moisture and organic substances in the chamber space. Next, introduce gas into the chamber space. In some embodiments, the gas can be other gases suitable for generating plasma P, such as argon (Ar). Heat the chamber space to generate plasma P. The ions of plasma P impinge on the upper oxidation material 240A to sputter the oxidation material 240A onto the top surface 220a of the shielding plate 220 and the surface of the deposition ring 230. In some embodiments, the oxidation material 240A can be a metal oxide, such as: aluminum oxide (Al x O y ) and other metal oxides, but not limited thereto.

[0120] In some embodiments, refer to Figure 5B and Figure 5D . Sputtering the oxidation material 240A with plasma P to deposit it on the shielding plate 220 and the deposition ring 230 is to prevent the oxidation material 240A from being sputtered when sputtering the target 240 on the semiconductor substrate W and the deposition ring 230 in the subsequent process steps using plasma P.

[0121] In operation 630, refer to Figure 5C and Figure 6 . Replace the shielding plate 220 deposited with the oxidation material 240A with the semiconductor substrate W. Specifically, use a robotic arm (not shown in the figure) to move the shielding plate 220 deposited with the oxidation material 240A out of the chamber space. Then, inspect the cross-section of the oxidation material 240A on the deposition ring 230 to confirm whether the oxidation material 240A is evenly deposited on the deposition ring 230.

[0122] In some embodiments, if the oxidation material 240A is evenly deposited on the deposition ring 230, replace the deposition ring 230 deposited with the oxidation material 240A with a new deposition ring 230. Next, use a robotic arm to move the semiconductor substrate W into the chamber space and place the semiconductor substrate W on the electrostatic chuck 210. In some embodiments, when the robotic arm moves the shielding plate 220 deposited with the oxidation material 240A out of the chamber space, remember the position parameters of the shielding plate 220 deposited with the oxidation material 240A, and when the robotic arm moves the semiconductor substrate W into the chamber space, place the semiconductor substrate W at the position where the previous shielding plate 220 was located according to the remembered position parameters above.

[0123] In operation 640, refer to Figure 5D andFigure 6 The target 240 is deposited on the semiconductor substrate W. Specifically, after the robotic arm places the semiconductor substrate W on the electrostatic chuck 210, the chamber space is evacuated to a vacuum state. A baking process is performed to remove moisture and organic substances in the chamber space. Next, a gas is introduced into the chamber space. In some embodiments, the gas may be, for example, argon (Ar) or other gases suitable for generating the plasma P. The chamber space is heated to generate the plasma P. The ions of the plasma P impinge on the upper target 240 to sputter the target 240 onto the top surface of the semiconductor substrate W and the surface of the deposition ring 230. In some embodiments, the target 240 may be a metal or an alloy, such as, but not limited to, a metal or alloy such as an aluminum-copper alloy (AlCu).

[0124] In some embodiments, operation 610 can be regarded as performing the equipment calibration method 300, and operation 610 includes operations 310 to 380. In some embodiments, the operator can repeatedly perform operation 610 in multiple axial directions of the shield 220 according to different requirements to center the shield 220 relative to the electrostatic chuck 210.

[0125] In some embodiments, after inspecting whether the oxidation material 240A is uniformly deposited in operation 630, the target 240 can also be deposited using a test semiconductor substrate (not shown) and the deposition ring 230 to inspect whether the cross-section of the target 240 deposited on the deposition ring 230 is uniformly deposited, and then operation 640 is performed. Specifically, the test semiconductor substrate is moved into the chamber space using, for example, a robotic arm and placed on the electrostatic chuck 210. A gas is introduced to generate the plasma P to sputter the target 240 onto the test semiconductor substrate and the deposition ring 230. The test semiconductor substrate is moved out of the chamber space using the robotic arm, and then it is inspected whether the cross-section of the target 240 deposited on the deposition ring 230 is uniformly deposited. If the cross-section of the target 240 is uniformly deposited, operation 640 is then performed.

[0126] It will be understood that not all advantages need to be described herein, that no particular advantage is required for all embodiments or examples, and that other embodiments or examples may provide different advantages.

[0127] In some embodiments, a method for calibrating a device includes: placing the body of a calibration part against the top surface of a shield disposed on an electrostatic chuck. The calibration part further includes a first extension connected to the body and bent relative to the body, and a second extension connected to the first extension and bent relative to the first extension, and the body and the second extension are on the same side of the first extension. The method for calibrating the device further includes: adjusting the relative position of the shield relative to the electrostatic chuck such that the second extension extending towards the shield along a first axis does not contact a deposition ring surrounding the electrostatic chuck when the first extension abuts against a first position and a second position on the side surface of the shield respectively, wherein the first position, the second position and the center of the shield are arranged along the first axis.

[0128] In some embodiments, adjusting the relative position of the shield relative to the electrostatic chuck further causes the second extension not to contact the deposition ring when the first extension abuts against a third position and a fourth position on the side surface of the shield respectively, and the third position and the fourth position are arranged along a second axis passing through the center of the shield. In some embodiments, adjusting the relative position of the shield relative to the electrostatic chuck further includes pushing the shield along the first axis towards the first position with the first extension until the second extension contacts the deposition ring, moving the calibration part from one side of the first position of the shield to the other side of the second position, and pushing the shield along the first axis towards the second position with the first extension and stopping before the second extension contacts the deposition ring.

[0129] In some embodiments, a method for maintaining a device includes: placing the body of a calibration part against the top surface of a shield disposed on an electrostatic chuck, wherein the calibration part further includes a first extension connected to the body and bent relative to the body and a second extension connected to the first extension and bent relative to the first extension, and the body and the second extension are on the same side of the first extension; moving the first extension along the first axis towards a first position on the side surface of the shield until the second extension extending towards the shield along the first axis contacts a deposition ring surrounding the electrostatic chuck, wherein the first axis passes through the center of the shield; moving the calibration part from one side of the first position of the shield to the other side of the second position, wherein the first position and the second position are arranged along the first axis; moving the first extension along the first axis towards the second position until the second extension extending towards the shield along the first axis contacts the deposition ring; and replacing the shield when the second extension contacts the deposition ring and the first extension does not abut against the second position.

[0130] In some embodiments, during movement of the first extension portion along the first axial direction towards the first position, the first extension portion pushes the shielding plate, and during movement of the first extension portion along the first axial direction towards the second position, the first extension portion does not contact the shielding plate. In some embodiments, during movement of the first extension portion along the first axial direction towards the first position and during movement of the first extension portion along the first axial direction towards the second position, the first extension portion does not contact the shielding plate. In some embodiments, the calibration method further includes replacing the shielding plate when the second extension portion moves along the first axial direction and contacts the deposition ring but the first extension portion does not abut against the second position. In some embodiments, the equipment maintenance method further includes moving the first extension portion along the second axial direction towards the third position on the side surface of the shielding plate until the second extension portion extending towards the shielding plate along the second axial direction contacts the deposition ring surrounding the electrostatic chuck, the second axial direction passing through the center of the shielding plate, moving the calibration part from one side of the third position of the shielding plate to one side of the fourth position, the third position and the fourth position being arranged along the second axial direction, moving the first extension portion along the second axial direction towards the fourth position until the second extension portion extending towards the shielding plate along the second axial direction contacts the deposition ring, and replacing the shielding plate when the second extension portion contacts the deposition ring and the first extension portion does not abut against the fourth position.

[0131] In some embodiments, a semiconductor processing method includes: calibrating the relative position of a shielding plate with respect to an underlying electrostatic chuck, including: abutting the body of a calibration part against the top surface of the shielding plate, wherein the calibration part further includes a first extension portion connected to the body and bent with respect to the body and a second extension portion connected to the first extension portion and bent with respect to the first extension portion, and the body and the second extension portion are on the same side of the first extension portion; pushing the shielding plate with the first extension portion along the first axial direction towards the first position on the side surface of the shielding plate until the second extension portion extending towards the shielding plate along the first axial direction contacts the deposition ring surrounding the electrostatic chuck, the first axial direction passing through the center of the shielding plate; moving the calibration part from one side of the first position of the shielding plate to one side of the second position, wherein the first position and the second position are arranged along the first axial direction; and pushing the shielding plate with the first extension portion along the first axial direction towards the second position and stopping before the second extension portion extending towards the shielding plate along the first axial direction contacts the deposition ring. The semiconductor processing method further includes: depositing an oxidation material coated outside a target on the shielding plate; replacing the shielding plate deposited with the oxidation material with a semiconductor substrate; and depositing the target on the semiconductor substrate.

[0132] In some embodiments, adjusting the relative position of the shielding plate with respect to the electrostatic chuck further causes the second extension portion not to contact the deposition ring when the first extension portion abuts against the third position and the fourth position on the side surface of the shielding plate respectively, wherein the third position and the fourth position are arranged along the second axial direction passing through the center of the shielding plate. In some embodiments, the second axial direction is perpendicular to the first axial direction.

[0133] The foregoing has outlined features of several embodiments or examples, enabling those skilled in the art to better understand various aspects of the present disclosure. Those skilled in the art should understand that they can readily use the present disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes and / or achieve the same advantages as the embodiments or examples introduced herein. Those skilled in the art should also recognize that such equivalent constructs do not depart from the spirit and scope of the present disclosure, and that they can be subjected to various changes, substitutions, and alterations without departing from the spirit and scope of the present disclosure.

Claims

1. An equipment calibration method, characterized in that, it includes: placing a top surface of a shielding plate on an electrostatic chuck against a body of a calibration part, wherein the calibration part further includes a first extension connected to the body and bent relative to the body and a second extension connected to the first extension and bent relative to the first extension, and the body and the second extension are on the same side of the first extension; and adjusting a relative position of the shielding plate relative to the electrostatic chuck so that the second extension extending along a first axis toward the shielding plate does not contact a deposition ring surrounding the electrostatic chuck when the first extension abuts against a first position and a second position on a side surface of the shielding plate respectively, wherein the first position, the second position and the center of the shielding plate are arranged on the first axis, and adjusting the relative position of the shielding plate relative to the electrostatic chuck further includes: pushing the shielding plate along the first axis toward the first position with the first extension until the second extension contacts the deposition ring; moving the calibration part from one side of the first position of the shielding plate to one side of the second position; and pushing the shielding plate along the first axis toward the second position with the first extension and stopping before the second extension contacts the deposition ring.

2. The equipment calibration method according to claim 1, characterized in that, adjusting the relative position of the shielding plate relative to the electrostatic chuck further causes the second extension not to contact the deposition ring when the first extension abuts against a third position and a fourth position on the side surface of the shielding plate respectively, wherein the third position and the fourth position are arranged along a second axis passing through the center of the shielding plate.

3. The equipment calibration method according to claim 2, characterized in that, adjusting the relative position of the shielding plate relative to the electrostatic chuck further includes: pushing the shielding plate along the second axis toward the third position with the first extension until the second extension contacts the deposition ring; moving the calibration part from one side of the third position of the shielding plate to one side of the fourth position; and pushing the shielding plate along the second axis toward the fourth position with the first extension and stopping before the second extension contacts the deposition ring.

4. An equipment maintenance method, characterized in that, it includes: placing a top surface of a shielding plate on an electrostatic chuck against a body of a calibration part, wherein the calibration part further includes a first extension connected to the body and bent relative to the body and a second extension connected to the first extension and bent relative to the first extension, and the body and the second extension are on the same side of the first extension; moving the first extension along a first axis toward a first position on a side surface of the shielding plate until the second extension extending along the first axis toward the shielding plate contacts a deposition ring surrounding the electrostatic chuck, wherein the first axis passes through the center of the shielding plate; moving the calibration part from one side of the first position of the shielding plate to one side of a second position, wherein the first position and the second position are arranged along the first axis; Move the first extension along the first axis towards the second position until the second extension extending along the first axis towards the shielding plate contacts the deposition ring; and Replace the shielding plate when the second extension contacts the deposition ring and the first extension does not abut against the second position.

5. The equipment maintenance method according to claim 4, wherein, During the movement of the first extension along the first axis towards the first position, the first extension pushes the shielding plate, and during the movement of the first extension along the first axis towards the second position, the first extension does not contact the shielding plate.

6. The equipment maintenance method according to claim 4, wherein, During the movement of the first extension along the first axis towards the first position and during the movement of the first extension along the first axis towards the second position, the first extension does not contact the shielding plate.

7. The equipment maintenance method according to claim 4, wherein, further comprising: Move the first extension along a second axis towards a third position on a side surface of the shielding plate until the second extension extending along the second axis towards the shielding plate contacts the deposition ring surrounding the electrostatic chuck, wherein the second axis passes through the center of the shielding plate; Move the calibration part from one side of the third position of the shielding plate to one side of a fourth position, wherein the third position and the fourth position are arranged along the second axis; Move the first extension along the second axis towards the fourth position until the second extension extending along the second axis towards the shielding plate contacts the deposition ring; and Replace the shielding plate when the second extension contacts the deposition ring and the first extension does not abut against the fourth position.

8. A semiconductor processing method, wherein, comprising: Calibrate the relative position of a shielding plate relative to an electrostatic chuck below, comprising: Abut a body of a calibration part against a top surface of the shielding plate, wherein the calibration part further comprises a first extension connected to the body and bent relative to the body and a second extension connected to the first extension and bent relative to the first extension, and the body and the second extension are on the same side of the first extension; Push the shielding plate with the first extension along a first axis towards a first position on a side surface of the shielding plate until the second extension extending along the first axis towards the shielding plate contacts a deposition ring surrounding the electrostatic chuck, the first axis passing through the center of the shielding plate; Move the calibration part from one side of the first position of the shielding plate to one side of a second position, wherein the first position and the second position are arranged along the first axis; and Push the shielding plate with the first extension along the first axis towards the second position and stop before the second extension extending along the first axis towards the shielding plate contacts the deposition ring; Deposit an oxide material coated outside a target on the shielding plate; Replace the shielding plate deposited with the oxide material with a semiconductor substrate; and Deposit the target on the semiconductor substrate.

9. The semiconductor processing method according to claim 8, wherein, adjusting a relative position of the shielding plate with respect to the electrostatic chuck further causes the second extension portion not to contact the deposition ring when the first extension portion abuts against a third position and a fourth position of the side surface of the shielding plate respectively, wherein the third position and the fourth position are arranged along a second axial direction passing through a center of the shielding plate.

10. The semiconductor processing method according to claim 9, wherein, the second axial direction is perpendicular to the first axial direction.

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