Substrate processing apparatus and control method for substrate processing apparatus

Abstract

The present application relates to a substrate processing apparatus and a control method of a substrate processing apparatus. Various measurements related to a substrate stage or a substrate placed on the substrate stage are performed in a processing container. The substrate processing apparatus has a processing container, a substrate stage, a rotary arm, a sensor, and a rotary mechanism. The processing container has a plurality of processing spaces formed therein. The substrate stage is disposed in each of the plurality of processing spaces. The rotary arm includes an end effector capable of holding a substrate, and a rotary axis located at a position equidistant from the plurality of processing spaces. The sensor is provided on a back surface of the end effector of the rotary arm on a side opposite to a substrate holding surface. The rotary mechanism rotates the rotary arm to move the sensor in the processing container to a position opposite to the substrate stage or a substrate placed on the substrate stage.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus and a method for controlling the substrate processing apparatus. Background Technology

[0002] In the polishing apparatus, it is proposed to install an online monitor outside the processing space used for polishing, transport the polished substrate to the outside of the processing space, and use the online monitor to measure the film thickness and other parameters of the substrate (Patent Document 1). Furthermore, as a substrate processing apparatus for processing substrates (hereinafter also referred to as wafers) in a substrate processing system, a substrate processing apparatus that simultaneously processes multiple wafers within a processing container is known (Patent Document 2).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2006-43873

[0006] Patent Document 2: Japanese Patent Application Publication No. 2019-220509 Summary of the Invention

[0007] The problem the invention aims to solve

[0008] This disclosure provides a substrate processing apparatus and a method for controlling the substrate processing apparatus, which are capable of performing various measurements related to a substrate stage or a substrate placed on a substrate stage within a processing container.

[0009] Solution for solving the problem

[0010] A substrate processing apparatus disclosed herein includes a processing container, a substrate mounting stage, a rotating arm, a sensor, and a rotating mechanism. The processing container has multiple processing spaces formed internally. The substrate mounting stage is disposed in each of the multiple processing spaces. The rotating arm includes an end effector capable of holding the substrate, and its rotation axis is located at equidistant positions from each of the multiple processing spaces. The sensor is disposed on the back side of the end effector of the rotating arm, opposite to the substrate holding surface. The rotating mechanism rotates the rotating arm to move the sensor within the processing container to a position opposite to the substrate mounting stage or the substrate placed on the substrate mounting stage.

[0011] The effects of the invention

[0012] According to this disclosure, various measurements related to a substrate stage or a substrate placed on a substrate stage can be performed within a processing container. Attached Figure Description

[0013] Figure 1 This is an exploded perspective view showing an example of the structure of a substrate processing apparatus according to an embodiment of the present disclosure.

[0014] Figure 2 This is a diagram illustrating an example of the relationship between the processing space at the standby position and the position of the rotating arm.

[0015] Figure 3 This is a diagram illustrating an example of the relationship between the processing space at the wafer holding position and the position of the rotating arm.

[0016] Figure 4 This is a diagram illustrating an example of the movement path of a wafer within the substrate processing apparatus of this embodiment.

[0017] Figure 5 This is a diagram showing an example of the exhaust path of the substrate processing apparatus of this embodiment.

[0018] Figure 6 This is a schematic cross-sectional view showing an example of the structure of the substrate processing apparatus of this embodiment.

[0019] Figure 7 This indicates the view from the back of the end effector. Figure 6 A perspective view of an example of the structure of the rotating arm shown.

[0020] Figure 8 This is a diagram illustrating an example of the operation of a substrate processing apparatus.

[0021] Figure 9 This is a diagram illustrating one example of a modified sensor. Detailed Implementation

[0022] Hereinafter, embodiments of the disclosed substrate processing apparatus and control method for the substrate processing apparatus will be described in detail based on the accompanying drawings. Furthermore, the disclosed technology is not limited to the following embodiments.

[0023] In substrate processing apparatuses that process multiple wafers simultaneously within a processing container, a rotating arm capable of holding the wafers is sometimes provided in the central portion of the processing container to transport the wafers between processing spaces. However, this structure, which includes a rotating arm in the central portion of the processing container, does not take into account the various measurements related to the substrate stage or the substrate placed on the substrate stage within the processing container. Therefore, it is desirable to perform these various measurements related to the substrate stage or the substrate placed on the substrate stage within the processing container.

[0024] [Structure of the substrate processing device]

[0025] Figure 1 This is an exploded perspective view showing an example of the structure of a substrate processing apparatus according to an embodiment of the present disclosure. In this embodiment, the description will... Figure 1The substrate processing apparatus 2 shown is used, for example, in a film deposition apparatus for performing plasma CVD (Chemical Vapor Deposition) processing on a wafer W. Figure 1 As shown, the substrate processing apparatus 2 includes a rectangular processing container (vacuum container) 20 when viewed from above. The processing container 20 is configured to maintain an internal vacuum atmosphere. The processing container 20 is configured to close the opening on its upper surface using the gas supply section 4 and manifold 36, described later. Furthermore, in Figure 1 In this design, internal partitions are omitted to facilitate easy identification of the relationship between the processing spaces S1-S4 and the rotating arm 3. Two feed inlets and outlets 21 are formed on the side of the processing container 20 connected to a vacuum delivery chamber (not shown), arranged along the Y direction. The feed inlets and outlets 21 are opened and closed using gate valves (not shown).

[0026] Multiple processing spaces S1 to S4 are provided inside the processing container 20. A mounting stage 22 is disposed in each of the processing spaces S1 to S4. The mounting stage 22 is an example of a substrate mounting stage and is movable in the vertical direction. The mounting stage 22 moves upwards when processing the wafer W and downwards when transporting the wafer W. A transport space T is provided at the lower part of the processing spaces S1 to S4, connecting the processing spaces S1 to S4 and transporting the wafer W using a rotating arm 3. Furthermore, the transport space T at the lower part of the processing spaces S1 and S2 is connected to each inlet / outlet 21, and the wafer W is fed in and out between the container and the vacuum transport chamber using a substrate transport mechanism (not shown). Moreover, the substrate transport mechanism is configured such that its substrate holding section can simultaneously hold two wafers W, for example, to transfer two wafers W to the substrate processing apparatus 2 together.

[0027] When viewed from the top surface, the processing spaces S1 to S4 are arranged in a two-row, two-column configuration. The row spacing and column spacing of this configuration are different sizes. That is, if we compare the spacing Py, which is the spacing in the Y direction (row spacing), with the spacing Px, which is the spacing in the X direction (column spacing), then spacing Py > spacing Px.

[0028] Figure 2 This is a diagram illustrating an example of the relationship between the processing space at the standby position and the position of the rotating arm. Figure 3 This is a diagram illustrating an example of the relationship between the processing space at the wafer holding position and the position of the rotating arm. (See diagram for example.) Figure 2 and Figure 3As shown, the rotating arm 3 has: four end effectors 32 capable of holding the wafers W respectively placed on the stage 22; and a base member 33 whose rotation axis is located at the center of a two-row, two-column layout. The four end effectors 32 are connected to the base member 33 in an X-shape. That is, the rotating arm 3 has the same number of end effectors 32 as the number of the multiple processing spaces S1 to S4. In addition, the rotation axis of the base member 33, i.e., the rotation axis of the rotating arm 3, is located at a distance equidistant from the multiple processing spaces S1 to S4. The X-shape of the rotating arm 3 is structured as follows: Figure 3 At the holding position of the wafer W shown, the dimension of the X shape in the Y direction corresponding to the row spacing is different from the dimension in the X direction corresponding to the column spacing.

[0029] exist Figure 2 In the standby position shown, the rotating arm 3 is located between each processing space S1 to S4, so as not to hinder the vertical movement of each platform 22. Figure 2 This refers to the state where wafers W are placed on each of the mounting stages 22. The movement of the rotating arm 3 will be explained in the case where the wafers W are transported from this state, for example, by swapping the first and second columns, that is, when the wafers W in the processing spaces S1 and S2 are transported to the processing spaces S3 and S4, and the wafers W in the processing spaces S3 and S4 are transported to the processing spaces S1 and S2.

[0030] First, move each mounting stage 22 to the junction position of the lower transport space T, causing the lifting pins 26 (described later) on each mounting stage 22 to rise and lift the wafer W. Next, rotate the rotating arm 3 clockwise by approximately 30°, as... Figure 3 As shown, each end effector 32 is inserted between the stage 22 and the wafer W. Next, the lifting pin 26 is lowered to place the wafer W onto each end effector 32. Then, the rotating arm 3 is rotated 180° clockwise to transport the wafer W to the holding position on each stage 22. When each stage 22 raises the lifting pin 26 to receive the wafer W, the rotating arm 3 is rotated approximately 30° counterclockwise to move to the standby position. In this way, the rotating arm 3 can be used to transport wafers W by exchanging the first and second rows. Therefore, for example, in cases where different processes are repeatedly performed in processing spaces S1, S2 and processing spaces S3, S4 (e.g., repeated film deposition and annealing processes), the time associated with transporting the wafer W can be shortened.

[0031] Figure 4 This is a diagram illustrating an example of the wafer movement path within the substrate processing apparatus of this embodiment. Figure 4The following describes the movement path of wafers W when they are transported from a vacuum transport chamber (not shown) into the substrate processing apparatus 2. First, as shown in path F1, using the substrate transport mechanism (not shown) of the vacuum transport chamber, two wafers W are simultaneously fed into each of the transport spaces T at the junction of the lower parts of the processing spaces S1 and S2 corresponding to the same row of mounting stages 22. Each mounting stage 22 in the processing spaces S1 and S2 raises its lifting pin 26 to receive the wafers W.

[0032] Next, the rotating arm 3 is rotated approximately 30° clockwise from the standby position, and the end effector 32 is inserted between the mounting stage 22 and the wafer W at the junction of the lower parts of the processing spaces S1 and S2. The lifting pin 26 is lowered to place the wafer W onto each end effector 32. When placing the wafer W, as shown in path F2, the rotating arm 3 is rotated 180° clockwise to transport the wafer W to the mounting stage 22 at the junction of the lower transport space T of the processing spaces S3 and S4 (the holding position of the rotating arm 3). When the lifting pin 26 is raised at the mounting stage 22 at the junction of the lower parts of the processing spaces S3 and S4 to receive the wafer W, the rotating arm 3 is rotated approximately 30° counterclockwise and moves back to the standby position. In this state, the mounting stage 22 in the processing spaces S1 and S2 is not loaded with wafer W, while the mounting stage 22 in the processing spaces S3 and S4 is loaded with wafer W. Next, as shown in path F1, using the substrate transport mechanism of the vacuum transport chamber, two wafers W are simultaneously fed into each mounting stage 22 at the junction of the lower parts of the processing spaces S1 and S2, and the wafers W are placed on the mounting stages 22 of the processing spaces S1 and S2, so that wafers W are placed on all mounting stages 22 of the processing spaces S1 to S4.

[0033] Similarly, during delivery, firstly, the wafer W, placed on the mounting stage 22 at the lower junction of processing spaces S1 and S2, is delivered to the vacuum delivery chamber using the substrate transport mechanism. Next, the wafer W, placed on the mounting stage 22 at the lower junction of processing spaces S3 and S4, is transported to the mounting stage 22 at the lower junction of processing spaces S1 and S2 using the rotating arm 3. Then, the wafer W, placed on the mounting stage 22 at the lower junction of processing spaces S1 and S2, is delivered to the vacuum delivery chamber using the substrate transport mechanism. Thus, by using the rotating arm 3 and the substrate transport mechanism capable of simultaneously delivering and ejecting two wafers W, wafers W can be delivered and ejected relative to processing spaces S1 to S4.

[0034] Furthermore, when transporting wafer W using the rotating arm 3, the offset of wafer W relative to the stage 22, which is the transport destination, can be detected, and the stage 22 can be moved slightly in the XY plane to correct the offset of wafer W. In this case, the substrate processing apparatus 2 has offset detection sensors at rotationally symmetrical positions within the row or column spacing along the rotational trajectory of wafer W held by the rotating arm 3. Figure 4 In the example, sensors 31a and 31b are located between processing spaces S1 and S2 and between processing spaces S3 and S4 within the row interval, respectively.

[0035] Sensors 31a and 31b are each a group consisting of, for example, two optical sensors, and are arranged on a straight line in the X direction passing through the center of the substrate processing apparatus 2, that is, the center position of the two-row, two-column layout. This is to ensure that the expansion direction of the thermal expansion of the processing container 20 is the same in both sensors, thereby reducing errors. Furthermore, the arrangement of sensors 31a and 31b is not limited to the X direction, as long as it is on a straight line passing through the center of the substrate processing apparatus 2. The substrate processing apparatus 2 compares the front and rear edges of the wafer W detected by sensors 31a and 31b with the output of an encoder (not shown) provided on the rotating arm 3, thereby detecting the offset of the wafer W.

[0036] exist Figure 4 In the example, location P24 indicates that the rear edge of wafer W has passed sensor 31b during transport from processing space S2 to processing space S4, and location P42 indicates that the rear edge of wafer W has passed sensor 31a during transport from processing space S4 to processing space S2. The substrate processing apparatus 2 can correct the offset of wafer W by slightly moving the stage 22 in the XY plane based on the detected offset. In other words, the substrate processing apparatus 2 adjusts the offset so that wafer W is located at the center of processing spaces S1 to S4 when the stage 22 is raised. Furthermore, "slightly" here refers to an area within 5 mm.

[0037] Figure 5 This is a diagram showing an example of the exhaust path of the substrate processing apparatus in this embodiment. Figure 5 The image shows the processing container 20 viewed from the top surface with the gas supply unit 4 (described later) removed. Figure 5As shown, a manifold 36 is disposed at the center of the substrate processing apparatus 2. The manifold 36 has multiple exhaust passages 361 connected to the processing spaces S1 to S4. Each exhaust passage 361 is connected at the lower center of the manifold 36 to a hole 351 of the thrust nut 35 (described later). Each exhaust passage 361 is connected to an annular flow path 363 within each guide member 362 disposed at the upper part of the processing spaces S1 to S4. That is, the gas in the processing spaces S1 to S4 is exhausted to the confluence exhaust port 205 (described later) via the flow path 363, the exhaust passages 361, and the hole 351. Furthermore, the manifold 36 is an example of an exhaust manifold.

[0038] Figure 6 This is a schematic cross-sectional view showing an example of the structure of the substrate processing apparatus of this embodiment. Figure 6 The cross-section is equivalent to Figure 5 The cross-section at line AA of the substrate processing apparatus 2 is shown. Four processing spaces S1 to S4 are identically configured and formed between the mounting stage 22 on which the wafer W is mounted and the gas supply unit 4 disposed opposite to the mounting stage 22. In other words, within the processing container 20, a mounting stage 22 and a gas supply unit 4 are respectively provided for each of the four processing spaces S1 to S4. Figure 6 The diagram shows processing spaces S1 and S3. The following explanation uses processing space S1 as an example.

[0039] The mounting stage 22 also serves as a lower electrode, and is formed, for example, as a flat cylindrical shape made of metal or aluminum nitride (AlN) with embedded metal mesh electrodes. The mounting stage 22 is supported from below by a support member 23. The support member 23 is cylindrical, extends vertically downward, and penetrates the bottom 27 of the processing container 20. The lower end of the support member 23 is located outside the processing container 20 and is connected to a rotary drive mechanism 600. The support member 23 is rotated using the rotary drive mechanism 600. The mounting stage 22 is configured to rotate according to the rotation of the support member 23. That is, the mounting stage 22 is configured to rotate on its own axis. Furthermore, an adjustment mechanism 700 for adjusting the position (and tilt) of the mounting stage 22 is provided at the lower end of the support member 23. The mounting stage 22 is configured to be able to move up and down between a processing position and a transition position using the adjustment mechanism 700 via the support member 23. Figure 6 In the diagram, the stage 22 at the junction position is depicted with solid lines, and the stage 22 at the processing position is indicated with dashed lines. Furthermore, at the junction position, the diagram shows the end effector 32 inserted between the stage 22 and the wafer W, receiving the wafer W from the lifting pin 26. Additionally, the processing position refers to the position where substrate processing (e.g., film deposition) is performed, and the junction position refers to the position where the wafer W is transferred between the stage 22 and a substrate transport mechanism or end effector 32 (not shown).

[0040] A heater 24 is embedded in the mounting stage 22. The heater 24 heats each wafer W mounted on the mounting stage 22 to approximately 60°C to 600°C. In addition, the mounting stage 22 is connected to ground potential.

[0041] Furthermore, the mounting platform 22 is provided with a plurality of (e.g., three) pin-through holes 26a, and a lifting pin 26 is disposed inside each of these pin-through holes 26a. The pin-through holes 26a are configured to extend from the mounting surface (upper surface) of the mounting platform 22 to the back surface (lower surface) opposite to the mounting surface. The lifting pin 26 is slidably inserted into the pin-through hole 26a. The upper end of the lifting pin 26 is suspended on the mounting surface side of the pin-through hole 26a. That is, the upper end of the lifting pin 26 has a diameter larger than that of the pin-through hole 26a, and a recess with a diameter and thickness larger than that of the upper end of the lifting pin 26 is formed at the upper end of the pin-through hole 26a, which can accommodate the upper end of the lifting pin 26. Thus, the upper end of the lifting pin 26 is locked onto the mounting platform 22 and suspended on the mounting surface side of the pin-through hole 26a. In addition, the lower end of the lifting pin 26 protrudes from the back of the platform 22 toward the bottom 27 of the processing container 20, and is configured to abut against a lifting mechanism (not shown).

[0042] With the platform 22 raised to the processing position, the upper end of the lifting pin 26 is housed in the recess on the mounting surface side of the pin through hole 26a. When the platform 22 is lowered from this position to the transfer position and the lifting pin 26 is raised using a lifting mechanism (not shown), the upper end of the lifting pin 26 protrudes from the mounting surface of the platform 22.

[0043] The gas supply unit 4 is located on top of the processing container 20 and above the mounting platform 22 via a guide member 362 made of insulating material. The gas supply unit 4 functions as an upper electrode. The gas supply unit 4 includes: a cover 42; a spray plate 43 configured as opposing surfaces facing the mounting surface of the mounting platform 22; and a gas flow chamber 44 formed between the cover 42 and the spray plate 43. A gas supply pipe 51 is connected to the cover 42, and the spray plate 43 has gas ejection holes 45 arranged longitudinally and transversely in the thickness direction, for example, so that the gas is sprayed toward the mounting platform 22 in a spray pattern.

[0044] Each gas supply unit 4 is connected to the gas supply system 50 via a gas supply pipe 51. The gas supply system 50 includes, for example, a supply source for the reaction gas (film-forming gas), purge gas, and cleaning gas, piping, valves V, and flow adjustment units M. The gas supply system 50 includes, for example, a cleaning gas supply source 53, a reaction gas supply source 54, a purge gas supply source 55, valves V1 to V3 installed on the piping of each supply source, and flow adjustment units M1 to M3.

[0045] The clean gas supply source 53 is connected to the clean gas supply passage 532 via a flow adjustment unit M1, valve V1, and a remote plasma unit (RPU) 531. The clean gas supply passage 532 branches into four systems downstream of the RPU 531, each connected to a gas supply pipe 51. Each branch pipe downstream of the RPU 531 is equipped with valves V11 to V14; during cleaning, the corresponding valves V11 to V14 are opened. Furthermore, in... Figure 6 For convenience, only valves V11 and V14 are shown in the diagram.

[0046] The reaction gas supply source 54 and the purge gas supply source 55 are connected to the gas supply passage 52 via flow adjustment units M2 and M3 and valves V2 and V3, respectively. The gas supply passage 52 is connected to the gas supply pipe 51 via a gas supply pipe 510. Furthermore, in Figure 6 In the diagram, gas supply passage 52 and gas supply pipe 510 uniformly show each supply passage and each supply pipe corresponding to each gas supply unit 4.

[0047] A high-frequency power supply 41 is connected to the spray plate 43 via a matching device 40. The spray plate 43 functions as an upper electrode opposite to the mounting stage 22. When high-frequency power is applied between the spray plate 43, which serves as the upper electrode, and the mounting stage 22, which serves as the lower electrode, the gas (in this example, a reactive gas) supplied from the spray plate 43 to the processing space S1 can be plasmaized by capacitive coupling.

[0048] Next, the exhaust path from the processing spaces S1 to S4 to the merging exhaust port 205 will be explained. For example... Figure 5 and Figure 6 As shown, the exhaust path starts from the annular flow path 363 within each guide member 362 provided in the upper part of the processing spaces S1 to S4, passes through each exhaust passage 361, and goes to the confluence exhaust port 205 via the confluence portion and hole 351 at the lower center of the manifold 36. In addition, the cross-section of the exhaust passage 361 is, for example, formed in a circular shape.

[0049] Around each of the processing spaces S1 to S4, an exhaust guide member 362 is provided to enclose each of the processing spaces S1 to S4 respectively. The guide member 362 is, for example, an annular body that surrounds the area surrounding the platform 22 located at the processing position at a distance from it. The guide member 362 is configured to form, for example, a flow path 363 that is rectangular in longitudinal section and annular when viewed from above. Figure 5 The diagram schematically shows the processing spaces S1 to S4, the guide member 362, the exhaust passage 361, and the manifold 36.

[0050] The guide member 362 forms a slit-shaped exhaust port 364 that opens toward the processing spaces S1 to S4. Thus, slit exhaust ports 364 are formed circumferentially on the side periphery of each processing space S1 to S4. An exhaust passage 361 is connected to the flow path 363, allowing the processed gas discharged from the slit exhaust ports 364 to flow toward the confluence portion and orifice 351 at the lower center of the manifold 36.

[0051] like Figure 5 As shown, when viewed from the top surface, the processing spaces S1-S2 and S3-S4 are arranged in a 180° rotationally symmetrical manner around the manifold 36. Thus, the flow path of the processed gas from each processing space S1 to S4 to the hole 351 via the slit exhaust port 364, the flow path 363 of the guide member 362, and the exhaust passage 361 is formed in a 180° rotationally symmetrical manner around the hole 351.

[0052] The orifice 351 is connected to the exhaust pipe 61 via a confluence exhaust port 205, which serves as the inner side of the thrust pipe 341 of the biaxial vacuum seal 34 disposed at the center of the processing container 20. The exhaust pipe 61 is connected to the vacuum pump 62, which constitutes the vacuum exhaust mechanism, via a valve mechanism 7. The vacuum pump 62 is provided for example for each processing container 20, and the exhaust pipes downstream of each vacuum pump 62 are confluenced, for example, connected to the plant exhaust system.

[0053] The valve mechanism 7 opens and closes the flow path of the processed gas formed in the exhaust pipe 61. The valve mechanism 7 has, for example, a housing 71 and an opening / closing part 72. A first opening 73 connected to the upstream exhaust pipe 61 is formed on the upper surface of the housing 71, and a second opening 74 connected to the downstream exhaust pipe is formed on the side of the housing 71.

[0054] The opening / closing part 72, for example, has an opening / closing valve 721 formed to block the first opening 73, and a lifting mechanism 722 provided outside the housing 71 and for raising and lowering the opening / closing valve 721 within the housing 71. The opening / closing valve 721 is configured to... Figure 6 The closed position of the first opening 73, indicated by the dotted line, is related to... Figure 6 The valve 721 can move freely between an open position, indicated by the solid line, which is recessed below the first opening 73 and the second opening 74. When the valve 721 is in the closed position, the downstream end of the combined exhaust port 205 is closed, and the exhaust from the processing container 20 is stopped. Conversely, when the valve 721 is in the open position, the downstream end of the combined exhaust port 205 is opened, and exhaust is allowed to pass through the processing container 20.

[0055] Next, the biaxial vacuum seal 34 and the thrust nut 35 will be described. The biaxial vacuum seal 34 includes a thrust pipe 341, bearings 342 and 344, a rotor 343, a main body 345, magnetic fluid seals 346 and 347, and a direct drive motor 348.

[0056] The thrust pipe 341 is a non-rotating central shaft that bears the thrust load applied to the upper center of the substrate processing apparatus 2 via the thrust nut 35. In other words, when the processing spaces S1 to S4 are set to a vacuum atmosphere, the thrust pipe 341 bears the vacuum load applied to the center of the substrate processing apparatus 2, thereby suppressing deformation of the upper part of the substrate processing apparatus 2. Furthermore, the thrust pipe 341 has a hollow structure, with its interior serving as a confluence exhaust port 205. The upper surface of the thrust pipe 341 abuts against the lower surface of the thrust nut 35. Additionally, an O-ring (not shown) seals between the inner surface of the upper part of the thrust pipe 341 and the outer surface of the protrusion on the inner circumference side of the thrust nut 35. Furthermore, the lower surface of the thrust pipe 341 is fixed to the main body 345 using bolts (not shown).

[0057] The outer peripheral surface of the thrust nut 35 is threaded, and the thrust nut 35 is threaded into the partition wall of the central part of the treatment container 20. A manifold 36 is provided at the upper part of the central part of the treatment container 20. The thrust load is borne by the manifold 36, the partition wall of the central part of the treatment container 20, the thrust nut 35, and the thrust piping 341. Furthermore, a portion of the lower surface of the manifold 36 contacts the upper surface of the thrust nut 35.

[0058] Bearing 342 is a radial bearing that holds the rotor 343 on the thrust pipe 341 side. Bearing 344 is a radial bearing that holds the rotor 343 on the main body 345 side. The rotor 343 and the thrust pipe 341 are arranged concentrically and are the rotation axis at the center of the rotating arm 3. In addition, a base member 33 is connected to the rotor 343. By rotating the rotor 343, the rotating arm 3, that is, the end effector 32 and the base member 33, rotate.

[0059] The main body 345 houses bearings 342 and 344, a rotor 343, magnetic fluid seals 346 and 347, and a direct drive motor 348. Magnetic fluid seals 346 and 347 are disposed on the inner and outer circumferential sides of the rotor 343, sealing the processing spaces S1 to S4 relative to the outside. The direct drive motor 348, an example of a rotating mechanism, is connected to the rotor 343 and drives the rotor 343, thereby rotating the rotating arm 3. Furthermore, the main body 345 is fixed to the bottom 27 (bottom surface) of the processing container 20 using bolts (not shown), and the thrust load applied to the thrust piping 341 is borne by the processing container 20 via the main body 345.

[0060] In other words, rotor 343 is an example of an internally hollow rotating cylinder, corresponding to the outer cylinder of biaxial vacuum seal 34, which is an example of a coaxial magnetic fluid seal. Furthermore, rotor 343 is located at equidistant distances from each of the processing spaces S1 to S4. Additionally, thrust pipe 341 is located in the hollow portion on the inner circumference of rotor 343, and the confluence exhaust port 205 inside thrust pipe 341 is an example of an exhaust path; thrust pipe 341 corresponds to the inner cylinder of biaxial vacuum seal 34. Furthermore, the upper surface of thrust pipe 341 is fixed to the partition wall at the center of processing container 20, i.e., the upper wall of processing container 20, by means of thrust nut 35. That is, thrust pipe 341 supports manifold 36 relative to the bottom wall (bottom 27) of processing container 20 by means of the partition wall at the center of processing container 20 and thrust nut 35.

[0061] Thus, in the biaxial vacuum seal 34, the first shaft, namely the thrust pipe 341 which serves as a non-rotating central shaft, supports the load on the upper part of the processing container 20 and acts as a gas exhaust pipe, while the second shaft, namely the rotor 343, is responsible for rotating the rotating arm 3.

[0062] The substrate processing apparatus 2 includes a control unit 8. The control unit 8 is, for example, a computer including a processor, a storage unit, an input device, and a display device. The control unit 8 controls each part of the substrate processing apparatus 2. The control unit 8 can use the input device to input instructions, allowing the operator to manage the substrate processing apparatus 2. Furthermore, the control unit 8 can visually display the operating status of the substrate processing apparatus 2 using the display device. Moreover, the storage unit of the control unit 8 stores control programs and process data for controlling various processes performed by the substrate processing apparatus 2 using the processor. The processor of the control unit 8 executes the control programs and controls each part of the substrate processing apparatus 2 according to the process data, thereby enabling the substrate processing apparatus 2 to perform desired substrate processing and measurement processing.

[0063] [Structure of the back of the end effector]

[0064] Alternatively, the substrate processing apparatus 2 can rotate the rotating arm 3, thereby bringing the sensor close to the stage 22 or the wafer W placed on the stage 22 within the processing container 20, and performing measurements related to the stage 22 or the wafer W. In this case, such as Figure 6 and Figure 7 As shown, a sensor 81 is provided on the back side 32a of the end effector 32 of the rotating arm 3 of the substrate processing apparatus 2, on the side opposite to the substrate holding surface. Figure 7 This indicates the view from the rear side 32a of the end effector 32. Figure 6The diagram shows a perspective view of an example of the structure of the rotating arm 3. The sensor 81 is capable of performing measurements related to the stage 22 or the wafer W placed on the stage 22 at a position opposite to it. Examples of parameters that can be measured using the sensor 81 for the stage 22 include temperature, surface roughness, and particle count. Similarly, examples of parameters that can be measured using the sensor 81 for the wafer W include temperature, film thickness, film quality, surface roughness, and particle count. The sensor 81 can also be an image sensor capable of capturing images of the object.

[0065] When measurement begins, control unit 8 activates direct drive motor 348 (see reference). Figure 6 The control unit 8 rotates the rotating arm 3 to move the sensor 81 within the processing container 20 to a position opposite to the mounting stage 22 or the wafer W mounted on the mounting stage 22. Then, the control unit 8 uses the sensor 81 to perform measurements related to the mounting stage 22 or the wafer W at the position opposite to the mounting stage 22 or the wafer W mounted on the mounting stage 22. For example, if wafer W is mounted on each mounting stage 22 at the junction of the transport space T, the control unit 8 rotates the rotating arm 3 clockwise by approximately 30° from the standby position, moving the sensor 81 to a position opposite to the wafer W, and performing measurements related to the wafer W.

[0066] In this way, the substrate processing apparatus 2 rotates the rotating arm 3 to move the sensor 81 within the processing container 20 to a position opposite to the stage 22 or the wafer W placed on the stage 22, and at this position, the sensor 81 performs measurements related to the stage 22 or the wafer W. Therefore, the substrate processing apparatus 2 can perform various measurements related to the stage 22 or the wafer W within the processing container 20 without transporting the stage 22 or the wafer W outside the processing container 20.

[0067] Figure 8 This is a diagram illustrating an example of the operation of the substrate processing apparatus 2. Figure 8 The diagram illustrates a position where the sensor 81 is moved to a position opposite to the wafer W placed on the stage 22 by rotating the rotating arm 3. The sensor 81 is located on the back surface 32a of the end effector 32, in a region that aligns with a line segment from the center to the outer periphery of the stage 22 or wafer W when the back surface 32a is opposite to the stage 22 or wafer W. Furthermore, when the stage 22 can rotate, the sensor 81 can also be located in a region that aligns with a curve connecting the center to the outer periphery of the stage 22 or wafer W. In this case, the sensor 81 can also be located in a region that aligns with a line segment from the center to the outer periphery of the stage 22 or wafer W. Figure 8In this example, sensor 81 is located in a rectangular area extending along a line segment from the center to the outer periphery of the stage 22 or wafer W.

[0068] The stage 22 is configured to be able to rotate according to the rotary drive mechanism 600 (see reference). Figure 6 Driven by the rotation of the sensor 81, the sensor 81 rotates after moving to a position opposite the wafer W. Figure 8 As shown, measurements related to the wafer W are performed while the stage 22 is rotating. Therefore, the substrate processing apparatus 2 can perform various measurements on the entire surface of the wafer W.

[0069] Sensors 81 are disposed on the back surface 32a of each of the four end effectors 32, the same number as the number of processing spaces S1 to S4. Thus, the substrate processing apparatus 2 can simultaneously perform various measurements related to the stage 22 or wafer W in each processing space S1 to S4. Alternatively, the substrate processing apparatus 2 can rotate the rotating arm 3 in a manner that causes the sensors 81 on the back surface 32a of each of the four end effectors 32 to circulate through the four processing spaces S1 to S4, and average the four measurement values ​​measured by the sensors 81 for each processing space S1 to S4.

[0070] Furthermore, the sensor 81 does not need to be located on the back surface 32a of all end effectors 32. For example, the sensor 81 can be located on the back surface 32a of one of the four end effectors 32. In this case, the substrate processing apparatus 2 rotates the rotating arm 3 in such a way that one sensor 81 on the back surface 32a of one end effector 32 is sequentially moved to a position opposite to the stage 22 or wafer W of each processing space S1 to S4. As a result, the substrate processing apparatus 2 can use a common sensor 81 to measure the stage 22 or wafer W of each processing space S1 to S4, thereby reducing the measurement error between processing spaces S1 to S4 caused by errors between sensors.

[0071] Alternatively, during the measurement using sensor 81, the substrate processing device 2 may adjust mechanism 700 (see reference 800) Figure 6 The substrate processing apparatus 2 moves the stage 22 or wafer W toward the focusing position of the sensor 81 according to the adjustment mechanism 700. For example, after rotating the rotating arm 3 to move the sensor 81 to a position opposite the stage 22 or wafer W, the substrate processing apparatus 2 controls the adjustment mechanism 700 to raise the stage 22 closer to the sensor 81. As a result, the substrate processing apparatus 2 can perform more precise measurements on the stage 22 or wafer W.

[0072] [Variation Example]

[0073] In the above embodiment, the example described is that the sensor 81 is provided in a rectangular area on the back surface 32a of the end effector 32 of the rotary arm 3. However, a sensor 82, which is smaller than the sensor 81 and serves as a point sensor, can also be provided on the back surface 32a. This configuration will be described as a variation.

[0074] Figure 9 This is a diagram illustrating an example of the modified sensor 82. Figure 9 The end effector 32 of the rotating arm 3 shown has a sensor 82, which is smaller than the sensor 81 in the embodiment, on its back surface 32a opposite to the substrate holding surface. The parameters that can be measured by the sensor 82 for the stage 22 or the wafer W are the same as those that can be measured by the sensor 81 for the stage 22 or the wafer W.

[0075] The sensor 82 is located in a local position on the back 32a of the end effector 32, on an arc A centered on the rotation axis of the rotating arm 3 and passing through the center of the stage 22.

[0076] When measurement begins, control unit 8 activates direct drive motor 348 (see reference). Figure 6 The control unit 8 rotates the rotating arm 3 to move the sensor 82 within the processing container 20 to a position opposite to the stage 22 or the wafer W placed on the stage 22. Additionally, the control unit 8 activates the rotation drive mechanism 600 (see reference 600). Figure 6 The sensor 82 rotates the stage 22 during measurement. Then, while the stage 22 is rotating, the control unit 8 activates the direct drive motor 348 to rotate the rotating arm 3, causing the sensor 82 to move along arc A between the center and outer periphery of the stage 22. Figure 9 In the diagram, the solid line represents the rotating arm 3 when the sensor 82 is located at the center of the stage 22, and the double-dotted line represents the rotating arm 3 when the sensor 82 is located at the outer periphery of the stage 22. Thus, the substrate processing apparatus 2 can perform various measurements on the entire surface of the stage 22 or the entire surface of the wafer W.

[0077] Furthermore, in the above-described embodiment, a direct drive motor 348 was used as the driving method for the rotor 343 in the biaxial vacuum seal 34, but it is not limited to this. For example, a pulley may be provided on the rotor 343, and it may be driven by a motor provided externally to the biaxial vacuum seal 34 using a synchronous belt. Alternatively, gear drive may be implemented by meshing a gear provided on the rotor 343, which serves as the outer cylinder, with a gear provided on the externally located motor. Similarly, in the driving methods for the first and second rotating cylinders in the triaxial vacuum seal, any of the following can be used: drive using a direct drive motor, drive using a synchronous belt, and drive using gears.

[0078] According to this embodiment, the substrate processing apparatus 2 includes a processing container 20, a substrate mounting stage (e.g., mounting stage 22), a rotating arm 3, sensors (e.g., sensors 81, 82), and a rotation mechanism (e.g., a direct drive motor 348). The processing container 20 has multiple processing spaces S1 to S4 formed inside. The substrate mounting stage is disposed in each of the multiple processing spaces S1 to S4. The rotating arm 3 includes an end effector 32 capable of holding a substrate (e.g., a wafer W), and its rotation axis is located at equidistant positions from each of the multiple processing spaces S1 to S4. The sensor is disposed on the back surface 32a of the end effector 32 of the rotating arm 3, opposite to the substrate holding surface. The rotation mechanism rotates the rotating arm 3 to move the sensor within the processing container 20 to a position opposite to the substrate mounting stage or the substrate mounted on the substrate mounting stage. As a result, various measurements related to the substrate mounting stage or the substrate mounted on the substrate mounting stage can be performed within the processing container 20.

[0079] Alternatively, according to this embodiment, the substrate mounting stage may be configured to rotate. Alternatively, after the sensor moves to a position opposite the substrate mounting stage or the substrate, measurements related to the substrate mounting stage or the substrate may be performed while the substrate mounting stage is rotating. As a result, various measurements can be performed on the entire surface of the substrate mounting stage or the entire surface of the substrate.

[0080] Alternatively, according to this embodiment, the sensor (e.g., sensor 81) may be located in the back surface 32a of the end effector 32, in a region that is at least aligned with a line segment from the center to the outer periphery of the substrate stage or substrate when the back surface 32a is facing the substrate stage or substrate. As a result, various measurements can be performed on the entire surface of the substrate stage or the entire surface of the substrate.

[0081] Alternatively, according to this embodiment, the sensor (e.g., sensor 82) may be located at a local position on the back surface 32a of the end effector 32, on an arc A centered on the rotation axis of the rotating arm 3 and passing through the center of the substrate mounting stage. As a result, even when using a small sensor 82 as a point sensor, various measurements can be performed on the entire surface of the substrate mounting stage or the entire surface of the substrate.

[0082] Alternatively, according to this embodiment, the substrate processing apparatus 2 may also include an adjustment mechanism 700 that adjusts the position of the substrate stage. Alternatively, the substrate stage or substrate may be able to move toward the sensor's focusing position in response to the adjustment of the adjustment mechanism 700. As a result, more precise measurements of the substrate stage or substrate can be performed.

[0083] Alternatively, according to this embodiment, the rotating arm 3 may include a plurality of end effectors 32, the same number as the plurality of processing spaces S1 to S4. Alternatively, sensors may be provided on the back surface 32a of each of the plurality of end effectors 32. As a result, various measurements related to the substrate mounting stage or substrate of each processing space S1 to S4 can be performed simultaneously.

[0084] Furthermore, according to this embodiment, the control method of the substrate processing apparatus 2 is a control method for a substrate processing apparatus 2 having a processing container 20, a substrate mounting stage, a rotating arm 3, a sensor, and a rotation mechanism. The control method of the substrate processing apparatus 2 includes a rotation step and a measurement step. The rotation step involves rotating the rotating arm 3 using the rotation mechanism to move the sensor within the processing container 20 to a position opposite to the substrate mounting stage or the substrate mounted on the substrate mounting stage. The measurement step involves using the sensor at the position opposite to the substrate mounting stage or the substrate to perform measurements related to the substrate mounting stage or the substrate. As a result, various measurements related to the substrate mounting stage or the substrate mounted on the substrate mounting stage can be performed within the processing container 20.

[0085] It should be considered that the embodiments disclosed herein are illustrative in all respects and are not restrictive. The above embodiments may also be omitted, substituted, or modified in various forms without departing from the scope and spirit of the claims.

[0086] For example, in the above embodiment, the substrate processing apparatus 2 is described as an example of an apparatus for performing plasma CVD processing as a substrate processing, but the disclosed technology can also be applied to any apparatus for performing other substrate processing such as plasma etching.

Claims

1. A substrate processing apparatus, wherein, The substrate processing apparatus has: The processing container has multiple processing spaces inside; A substrate mounting stage is disposed in the plurality of processing spaces, wherein the substrate mounting stage is configured to move up and down between a processing position for performing substrate processing and a junction position for transferring substrates, wherein the junction position is below the processing position, and wherein the substrate mounting stage is provided with a lifting pin for lifting the substrate. A rotating arm, including an end effector capable of holding a substrate, wherein the axis of rotation of the rotating arm is located at a position equidistant from the plurality of processing spaces; A sensor is located on the back side of the end effector of the rotating arm, opposite to the substrate holding surface; A rotating mechanism that rotates the rotating arm to move the sensor within the processing container toward a position opposite the substrate stage or a substrate placed on the substrate stage; and The control unit controls the rotation mechanism to rotate the rotating arm when the substrate mounting stage is in the junction position, so as to move the sensor within the processing container to a position opposite to the substrate mounting stage or the substrate mounted on the substrate mounting stage.

2. The substrate processing apparatus according to claim 1, wherein, The substrate mounting stage is configured to rotate. After the sensor moves to a position opposite to the substrate mounting stage or the substrate, it performs measurements related to the substrate mounting stage or the substrate while the substrate mounting stage is rotating.

3. The substrate processing apparatus according to claim 2, wherein, The sensor is located on the back side of the end effector in a region that is at least able to be aligned with a line segment from the center to the outer periphery of the substrate stage or the substrate when the back side is opposite to the substrate stage or the substrate.

4. The substrate processing apparatus according to claim 2, wherein, The sensor is located at a local position on the back side of the end effector, on an arc centered on the rotation axis of the rotating arm and passing through the center of the substrate mounting stage. During the measurement by the sensor, while the substrate stage is rotating, the rotating mechanism rotates the rotating arm in such a way that the sensor moves along the arc between the center and the outer periphery of the substrate stage.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein, The substrate processing apparatus also includes an adjustment mechanism for adjusting the position of the substrate mounting stage. The substrate stage or the substrate can move toward the focusing position of the sensor according to the adjustment mechanism.

6. The substrate processing apparatus according to any one of claims 1 to 4, wherein, The rotating arm includes the same number of end effectors as the plurality of processing spaces. The sensor is located on the back side of each of the plurality of end effectors.

7. A control method for a substrate processing apparatus, The substrate processing apparatus has: The processing container has multiple processing spaces inside; Substrate mounting stages are respectively disposed in the plurality of processing spaces, wherein... The substrate mounting stage is configured to move up and down between a processing position for performing substrate processing and a handover position for transferring the substrate, wherein the handover position is below the processing position, and wherein the substrate mounting stage is provided with a lifting pin for lifting the substrate. A rotating arm, including an end effector capable of holding a substrate, wherein the axis of rotation of the rotating arm is located at a position equidistant from the plurality of processing spaces; A sensor is disposed on the back side of the end effector of the rotating arm, opposite to the substrate holding surface; and A rotating mechanism that causes the rotating arm to rotate, wherein, The control method for this substrate processing apparatus includes the following steps: When the substrate mounting stage is in the junction position, the rotating mechanism rotates the rotating arm to move the sensor within the processing container to a position opposite to the substrate mounting stage or the substrate mounted on the substrate mounting stage; and The sensor is used to perform measurements related to the substrate stage or the substrate at a position opposite to the substrate stage or the substrate.

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